KR100487434B1 - Liquid Crystal Display Device and Method for Manufacturing the Same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same, which improves a phenomenon of spots on the screen. A data line, a pixel electrode formed in each pixel region, a semiconductor layer formed below each data line and a thin film transistor region, a redundancy electrode formed below the semiconductor layer formed below each data line, and each data line The pixel region adjacent to is characterized by including a stain preventing metal parallel to the redundancy electrode and formed to be spaced apart from the redundancy electrode by the same distance.

Description

Liquid crystal display device and method for manufacturing the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device in which a phenomenon of unevenness on a screen is improved.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display devices (LCDs), plasma display panels (PDPs), electro luminescent displays (ELD), and vacuum fluorescent (VFD) Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices. Among them, LCD is the most widely used as the substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption. In addition to the use of the present invention has been developed in various ways such as a television and a computer monitor for receiving and displaying broadcast signals.

In order to use such a liquid crystal display as a general screen display device in various parts, it is a matter of how high quality images such as high definition, high brightness and large area can be realized while maintaining the characteristics of light weight, thinness and low power consumption. Can be.

A general liquid crystal display device may be largely divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates bonded to each other with a predetermined space; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrates 11 and 12. FIG.

Here, the first glass substrate (TFT array substrate) has a plurality of gate lines arranged in one direction at regular intervals, a plurality of data lines arranged at regular intervals in a direction perpendicular to the gate lines, A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing a gate line and a data line, and a plurality of thin film transistors switched by signals of the gate line to transfer the signal of the data line to each pixel electrode. Is formed.

The second glass substrate (counter substrate) includes a black matrix layer for blocking light in portions other than the pixel region, R, G, and B color filter layers for expressing color colors, and a common electrode for implementing an image. Is formed.

The driving principle of the liquid crystal display device uses the optical anisotropy and polarization property of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the arrangement of molecules can be controlled by artificially applying an electric field to the liquid crystal.

Therefore, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal by optical anisotropy, thereby representing image information.

Meanwhile, a liquid crystal display device manufactured by a four-mask etching process for patterning a semiconductor layer and a source / drain electrode using the same mask may include not only a portion where a channel layer is formed but also a portion where the data line is formed. It will be formed entirely in the lower part.

In this case, in the transmissive liquid crystal display, the backlight is positioned under the liquid crystal module so that the backlight is irradiated to the liquid crystal module to display an image. As a result, the semiconductor layer is directly exposed to the backlight in a region excluding the portion covered by the gate electrode. As such, since the semiconductor layer is exposed to the backlight, there is a problem that noise occurs due to the amount of charge remaining in the semiconductor layer due to the backlight irradiation.

Therefore, in the process of patterning the gate line on the first glass substrate to prevent the occurrence of noise in the semiconductor layer by the backlight, a redundancy electrode is formed of the same material as the gate line on the portion where the data line is to be formed. Therefore, the problem of deterioration of characteristics of the semiconductor layer due to direct irradiation of the backlight is improved. Hereinafter, a liquid crystal display and a manufacturing method thereof according to the related art with which the redundancy electrode is formed will be described with reference to the accompanying drawings.

1 is a plan view illustrating a pixel structure of regions A and B of a conventional liquid crystal display device and a liquid crystal display device, and FIG. 2 is a structural cross-sectional view taken along the line AA ′ of FIG. 1.

As shown in FIG. 1, a single pixel of a conventional liquid crystal display device vertically intersects a gate line 11 and a data line 13 defining a pixel region, a pixel electrode 15 formed in the pixel region, and the data. The redundancy electrode 11a and the redundancy electrode 11a and the data line 13 formed below the line 13 in a direction perpendicular to the gate line 11 which is the same layer as the gate line 11. In the thin film transistor formation region, the semiconductor layer 12 is formed to protrude along the data line 13.

13a and 13b which are not described are the source electrode 13a and the drain electrode 13b formed at the same time when the data line 13 is patterned.

Hereinafter, a manufacturing method of a conventional liquid crystal display device will be described with reference to FIGS. 2 and 3A to 3F.

First, the gate line forming metal is deposited on the substrate 10.

Subsequently, the gate line forming metal is selectively removed to form the gate line 11 protruding from the gate electrode 11e, and at the same time, the redundancy electrode 11a is formed at the portion where the data line is to be formed. And spaced apart a predetermined interval in the vertical direction. In this case, the redundancy electrode 11a is formed to have a width slightly wider than the width at which the semiconductor layer 12 is formed in a subsequent process.

As described above, the redundancy electrode 11a is for preventing the subsequent semiconductor layer 12 from being directly exposed to the backlight, thereby eliminating the residual amount of charge due to the backlight.

Subsequently, a gate insulating layer 110 is deposited on the entire surface of the substrate 10 including the gate line 11 and the redundancy electrode 11a.

Subsequently, the semiconductor layer 12a and the data line forming metal 13d are sequentially deposited on the entire gate insulating layer 110.

Subsequently, the metal layer is wet-etched using the halftone mask 130 having the stepped portion at the portion where the channel is formed to form the data line 13. This will be described in detail as follows.

As shown in FIG. 3A, a halftone mask 130 having a narrow thickness of a portion corresponding to a channel portion and a relatively thick thickness of a portion corresponding to a source / drain electrode is formed on the data line forming metal 13d. As shown in FIG. 3B, the data line forming metal 13e is wet-etched using the half tone mask 130.

As shown in FIG. 3C, the semiconductor layer 12a is dry-etched using the halftone mask 130 to form the semiconductor layer 12 patterned to the width of the halftone mask 130. When the dry etching is performed, a portion of the data line forming metal 13f is etched to some extent so that the data line forming metal 13f is positioned within the width of the semiconductor layer 12. As shown in FIG. 3D, the halftone mask 130a is patterned in a shape in which a portion corresponding to the channel portion is removed by annealing in an O ₂ atmosphere.

As shown in FIG. 3E, the data line forming metal 13f exposed to the portion where the half tone mask 130a is removed is etched to form source / drain metals 13a and 13b.

Subsequently, as shown in FIG. 2, the protective layer 120 is deposited on the entire surface of the substrate 10 including the data line 13 and the like, and then contact holes (not shown) are exposed to expose a predetermined region of the drain electrode 13b. After forming, the pixel electrode 15 filling the contact hole is formed.

Subsequently, an opposite substrate on which the array of thin film transistors is formed to form an opposite substrate on which a color filter array is formed, is bonded to the substrate, and the liquid crystal is filled therebetween to complete the manufacture of the liquid crystal display device. .

On the other hand, as shown in FIG. 1, in the conventional liquid crystal display, when an observer views a screen, there is a difference in image quality of each region, such as an A region in which spots appear and a B region in which spots do not appear.

This is due to the parasitic capacitance generated between the redundancy electrode 11a and the pixel electrode, because the parasitic capacitance is different for each region.

In other words, when the average parasitic capacitance is Cdp, the deviation of the parasitic capacitance of each pixel is It can be called Cdp. As shown in the A region, the spot where the spot appears is the deviation of the parasitic capacitance ( Cdp) is a large portion, and the B region is a variation of these parasitic capacitances ( Cdp) is a small part. The parasitic capacitance is due to the distance l _n between the redundancy electrode 11a and the pixel electrode 15. The smaller the distance, the larger the parasitic capacitance value.

As described above, the difference in distance between the redundancy electrode 11a and the pixel electrode 15 in each region may be due to the redundancy electrode 11a patterned in the same process as the gate line 11 and thereafter, the semiconductor layer 12. This is because it is very difficult to precisely adjust the alignment for each pixel in the repeated exposure process since the data line 13 and the pixel electrode 15 are subjected to two or more exposure processes.

The conventional liquid crystal display as described above has the following problems.

Since the redundancy electrode and the pixel electrode are formed in the lowest layer and the uppermost layer, respectively, in view of the formation of wirings, the liquid crystals that form the pixel electrode after the redundancy electrode are formed and then undergo two or four exposure processes. In the manufacturing method of the display device, it is difficult to keep the distance between the redundancy electrode and the pixel electrode constant.

Accordingly, the observer may experience a parasitic capacitance difference between the electrodes for each pixel in which the distance between the redundancy electrode and the pixel electrode is different, and when the deviation of the parasitic capacitance is more severe than the standard value, the observer may feel a stain.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a liquid crystal display device and a method of manufacturing the same, which improve a phenomenon in which a stain occurs on a screen.

A liquid crystal display of the present invention for achieving the above object comprises a plurality of gate lines and a plurality of data lines that are perpendicularly crossed on a substrate to define a plurality of pixel regions, the pixel electrode formed in each pixel region, A redundancy electrode formed under each of the data lines and a thin film transistor region; a redundancy electrode formed under the semiconductor layer formed under each of the data lines; and a redundancy electrode parallel to the redundancy electrode in the pixel region adjacent to each data line. The anti-stain metal is formed to be spaced apart from the electrode by the same distance. The redundancy electrode and the anti-stain metal are formed on the same layer as the gate line.

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The redundancy electrode and the stain preventing metal are formed of the same material as the gate line.

The stain preventing metal is formed to overlap a portion of the pixel electrode. The stain preventing metal is electrically connected to each other through the contact hole.

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The manufacturing method of the liquid crystal display device of the present invention for achieving the above object is the manufacture of a liquid crystal display device having a plurality of gate lines and data lines and a pixel electrode formed in the pixel region to be vertically crossed to define the pixel region. A method comprising: depositing a gate line forming metal on a front surface of a substrate, selectively patterning the gate line forming metal to form a gate line, and at the same time, redundancy in the data line forming region to be spaced apart from the gate line Forming an electrode and forming an anti-stain metal parallel to the redundancy electrode and spaced at equal intervals in the pixel area adjacent to each redundancy electrode over the entire pixel area, forming a gate insulating film on the entire surface of the substrate; The gate so as to correspond to the width of the redundancy electrode Forming a data line including a semiconductor layer and a source / drain electrode on the semiconductor layer, forming a passivation layer on the entire surface of the substrate, and forming a pixel electrode in the pixel region so as to be connected to the drain electrode. It is characterized by including the steps.

The redundancy electrode and the stain preventing metal are formed on the same layer as the gate line, the redundancy electrode and the stain preventing metal are formed of the same material as the gate line, and the stain preventing metal overlaps with a part of the pixel electrode. Preferably, the gap between the redundancy electrode and the stain preventing metal is equally spaced apart from each pixel formed in the liquid crystal display device. In addition, the stain preventing metal and the pixel electrode may include the protective layer and the gate. Contact holes may be further formed in the insulating film to be electrically connected to each other to make an equipotential.

Hereinafter, a liquid crystal display and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

4 is a plan view illustrating a pixel structure of regions A and B of the liquid crystal display and the liquid crystal display according to the first exemplary embodiment of the present invention, and FIG. 5 is a cross-sectional view of the structure taken along the line BB ′ of FIG. 4.

As shown in FIG. 4, a single pixel of a liquid crystal display according to the first exemplary embodiment of the present invention vertically intersects a gate line 21 and a data line 23 defining a pixel region, and a pixel electrode formed in the pixel region. A redundancy electrode 21a formed on the same layer as the gate line 21 in a direction perpendicular to the gate line 21, and the redundancy electrode 21a on the redundancy electrode 21a. And a semiconductor layer 22 formed to correspond to the inside of the pattern.

23a and 23b which are not described are the source electrode 23a and the drain electrode 23b which are formed simultaneously at the time of patterning the said data line 23. FIG.

Hereinafter, a method of manufacturing a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 3 and 4.

First, the gate line forming metal is deposited on the substrate 20.

Subsequently, the gate line forming metal is selectively removed to form a gate line 21 protruding from the gate electrode, and at the same time, the redundancy electrode 21a is spaced apart from the gate electrode 21a by a predetermined interval. And a stain preventing metal 25 in a direction parallel to the redundancy electrode 21a. In this case, the redundancy electrode 21a is formed to have a width slightly wider than the width at which the semiconductor layer 22 is formed in a subsequent process. As described above, the redundancy electrode 21a is a semiconductor to be formed later. By reducing the portion of the layer 22 directly irradiated to the backlight, the amount of charge remaining due to the backlight is controlled.

The gap between the stain preventing metal 25 and the redundancy electrode 21a is generally equal to or smaller than the minimum value of the gap between the redundancy electrode 21a and the pixel electrode 24. The pixel electrode 24 and the stain preventing metal 25 formed in the process may partially overlap or overlap all of the pixels. This prevents the parasitic capacitance from being generated between the redundancy electrode 21a and the pixel electrode 24 in the conventional liquid crystal display device, thereby forming the anti-staining metal 25 at a predetermined distance from the redundancy electrode. This is to keep the parasitic capacitance of the region at the same value.

Subsequently, a gate insulating layer 210 is deposited on the entire surface of the substrate 20 including the gate line 21, the redundancy electrode 21a, and the stain preventing metal 25.

Subsequently, a semiconductor layer forming layer and a metal layer are sequentially deposited on the gate insulating layer 210.

Subsequently, the semiconductor layer 22 is formed on the gate insulating layer 210 so as to be positioned above the redundancy electrode 21a and the gate electrode on which the thin film transistor is formed.

Subsequently, the metal layer is wet-etched using a half tone mask (not shown) having a step at a portion where a channel is formed to form a data line 23 having a vertical shape with the gate line 21.

Subsequently, the semiconductor layer forming layer is dry-etched using the half tone mask to form the semiconductor layer 22. When the dry etching is performed, some etching occurs in the portion of the data line 23 so that the pattern of the data line 13 is positioned within the width of the semiconductor layer 22. The halftone mask is ashed in an O ₂ atmosphere to remove the halftone mask of the portion corresponding to the channel portion.

Subsequently, the half-tone mask is removed to etch the exposed metal layer to form source / drain metals 23a and 23b.

Subsequently, after the protective film 220 is deposited on the entire surface of the substrate 20 including the data line 23 and the like, a contact hole (not shown) is formed to expose a predetermined region of the drain electrode 23b. A pixel electrode 24 filling the contact hole is formed. Then, an opposing substrate on which the array of thin film transistors is formed to form an opposing substrate on which a color filter array is formed is formed, and then bonded to the substrate. The liquid crystal is filled in between to complete the manufacture of the liquid crystal display.

On the other hand, as shown in Figure 3, the liquid crystal display according to the first embodiment of the present invention is shown that the spots do not appear in both the A region and B region. In the liquid crystal display according to the first exemplary embodiment of the present invention, spots do not appear not only in the A region or the B region but also randomly selected all pixels, which is the redundancy electrode 21a and the stain preventing metal patterned in the same process. This is an effect that can be obtained by making the interval of (25) constant so that parasitic capacitance generated between the two is matched in all the pixels.

As in the related art, a question may arise as to whether a parasitic capacitance between the redundancy electrode and the pixel electrode 24 does not occur, but the influence of the parasitic capacitance with the anti-staining metal 25 adjacent to the redundancy electrode 21a on the same layer. This relatively much larger, and parasitic capacitance of the redundancy electrode 21a and the pixel electrode 24 is a problem that can be controlled by using an organic insulating film between the gate insulating film or the protective film interposed therebetween. Through the liquid crystal display according to the first exemplary embodiment of the present invention, an image having the same level can be obtained in all pixels.

FIG. 5 is a plan view illustrating a pixel structure of regions A and B of a liquid crystal display and a liquid crystal display according to a second exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view of the structure taken along the line C-C 'of FIG. 5.

As shown in FIG. 5, a single pixel of the liquid crystal display according to the second exemplary embodiment of the present invention vertically intersects a gate line 21 and a data line 23 defining a pixel area, and a pixel electrode formed in the pixel area. A redundancy electrode 21a formed on the same layer as the gate line 21 in a direction perpendicular to the gate line 21, and the redundancy electrode 21a on the redundancy electrode 21a. The semiconductor layer 22 is formed so as to correspond to the inside of the pattern. The non-described 23a and 23b are the source electrode 23a and the drain electrode 23b which are simultaneously formed when the data line 23 is patterned.

Hereinafter, a method of manufacturing a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 3 and 4. First, a gate line forming metal is deposited on the substrate 20.

Subsequently, the gate line forming metal is selectively removed to form a gate line 21 protruding from the gate electrode, and at the same time, the redundancy electrode 21a is spaced apart from the gate electrode 21a by a predetermined interval. And a stain preventing metal 25 in a direction parallel to the redundancy electrode 21a. In this case, the redundancy electrode 21a is formed to have a width slightly wider than the width at which the semiconductor layer 22 is formed in a subsequent process.

As described above, the redundancy electrode 21a reduces the amount of charge of the semiconductor layer 22 due to the backlight by reducing the portion of the semiconductor layer 22 formed thereafter that is directly irradiated by the backlight. To control.

The gap between the stain preventing metal 25 and the redundancy electrode 21a is generally equal to or smaller than the minimum value of the gap between the redundancy electrode 21a and the pixel electrode 24. The pixel electrode 24 and the stain preventing metal 25 formed in the process may partially overlap or overlap all of the pixels. This configuration of the present invention, in view of the fact that in the conventional liquid crystal display device, the parasitic capacitance is unevenly generated in all the pixel regions between the redundancy electrode 21a and the pixel electrode 24, causing unevenness. In the pixel region, the parasitic capacitance of all the pixel regions is maintained at the same value by forming the anti-staining metal 25 having the same interval l spaced apart from the corresponding redundancy electrode in the pixel region (s).

Subsequently, a gate insulating layer 210 is deposited on the entire surface of the substrate 20 including the gate line 21, the redundancy electrode 21a, and the stain preventing metal 25.

Subsequently, a semiconductor layer forming layer and a metal layer are sequentially deposited on the gate insulating layer 210.

Subsequently, the metal layer is wet-etched using a halftone mask (not shown) having a step at a portion where a channel is formed to form a data line 23 in a direction perpendicular to the gate line 21.

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Subsequently, the semiconductor layer forming layer is dry-etched using the half tone mask to form the semiconductor layer 22. In this case, the semiconductor layer forming layer that is above the redundancy electrode 21a and corresponding to the lower portion of the data line 23 is also patterned in a shape having a width similar to that of the data line 23. When the dry etching is performed, the etching of the data line 23 occurs to a portion of the data line 23 so that the pattern of the data line 23 is located within the width of the semiconductor layer 22.

Subsequently, the halftone mask is ashed in an O ₂ atmosphere to remove the halftone mask of the portion corresponding to the channel portion.

Subsequently, the half-tone mask is removed to etch the exposed metal layer to form source / drain metals 23a and 23b.

Subsequently, after the protective film 220 is deposited on the entire surface of the substrate 20 including the data line 23 and the like, a contact hole (not shown) and the stain preventing metal (not shown) are exposed to expose a predetermined region of the drain electrode 23b. 25 forms contact holes 27a and 27b that are partially exposed.

Subsequently, the transparent metal film filling the contact holes is deposited on the entire surface, and then patterned to form the pixel electrode 24.

Subsequently, an opposite substrate on which the array of thin film transistors is formed to form an opposite substrate on which a color filter array is formed, is bonded to the substrate, and the liquid crystal is filled therebetween to complete the manufacture of the liquid crystal display device. .

On the other hand, as shown in Figure 6, the liquid crystal display according to the second embodiment of the present invention is shown that the spots do not appear in both the A region and B region. In the liquid crystal display according to the second exemplary embodiment of the present invention, spots do not appear not only in the A region or the B region but also randomly selected all pixels, which prevents the pixel electrode 24 and the anti-staining metal 25. At the equipotential, the pixel electrode 24 and the stain preventing metal 25 are regarded as a single electrode concept, so that the parasitic capacitance problem of the pixel electrode 24 and the redundancy electrode 21a may appear in the first embodiment. Also solved.

As in the first embodiment, the parasitic capacitance generated between the two pixels can be matched in all pixels by making the distance l _dp between the redundancy electrode 21a and the stain preventing metal 25 patterned in the same process constant. In addition, secondary parasitic capacitance problems can be avoided.

The liquid crystal display of the present invention as described above has the following effects.

In order to prevent charges remaining in the semiconductor layer due to the on / off operation of the backlight, in addition to the redundancy electrode in the same process as the gate line, the anti-staining metal in the direction parallel to the redundancy electrode and having a predetermined interval is formed to form a pixel. The liquid crystal display may be formed to have the same value of parasitic capacitance caused by the redundancy electrode in all regions of, thereby solving the spot phenomenon felt by the observer.

1 is a plan view showing a pixel structure of regions A and B of a conventional liquid crystal display device and a liquid crystal display device;

2 is a structural cross-sectional view taken along line AA ′ of FIG. 1, and FIGS. 3A to 3E are process cross-sectional views of the TFT forming portion of FIG. 1.

4 is a plan view illustrating a pixel structure of regions A and B of a liquid crystal display and a liquid crystal display according to the first embodiment of the present invention.

5 is a structural cross-sectional view taken along the line BB ′ of FIG. 4.

6 is a plan view illustrating a pixel structure of regions A and B of a liquid crystal display and a liquid crystal display according to a second exemplary embodiment of the present invention.

FIG. 7 is a structural cross-sectional view taken along the line C-C 'of FIG.

* Description of symbols on the main parts of the drawings *

21: gate line 21a: redundancy electrode

22 semiconductor layer 23 data line

23a: source electrode 23b: data line

24: pixel electrode 25: stain prevention metal

27a, 27b: first and second contact holes 210: gate insulating film

220: protective film

_dp : The gap between the redundancy electrode and the metal to prevent staining

Claims (12)

A plurality of gate lines and a plurality of data lines vertically intersecting on the substrate to define a plurality of pixel regions; Pixel electrodes formed in the pixel areas; A semiconductor layer formed under each of the data lines and a thin film transistor region; A redundancy electrode formed under the semiconductor layer formed under each of the data lines; And And a stain preventing metal in the pixel region adjacent to each of the data lines and parallel to the redundancy electrode and formed to be spaced apart from the redundancy electrode by the same distance. The method of claim 1, And the redundancy electrode and the stain preventing metal are formed on the same layer as the gate line. The method of claim 1, The redundancy electrode and the stain preventing metal are formed of the same material as the gate line. delete The method of claim 1, And the stain preventing metal is formed to overlap with a portion of an adjacent pixel electrode. The method of claim 5, And the pixel electrodes are electrically connected to each other through contact holes. In the manufacturing method of a liquid crystal display device having a plurality of gate lines and data lines that are vertically crossed to define a pixel region and pixel electrodes formed in each pixel region, Depositing a metal for forming a gate line on the front surface of the substrate; The gate line forming metal is selectively patterned to form a gate line, and a redundancy electrode is formed in the data line forming region to be spaced apart from the gate line, and a pixel region adjacent to the redundancy electrode is formed over the entire pixel region. Forming a stain preventing metal parallel to the redundancy electrode and spaced at equal intervals; Forming a gate insulating film on the entire surface of the substrate; Forming a data line including a semiconductor layer on the gate insulating layer and a source / drain electrode on the semiconductor layer so as to correspond to the width of the redundancy electrode; Forming a protective film on the entire surface of the substrate; And And forming a pixel electrode in the pixel area so as to be connected to the drain electrode. The method of claim 7, wherein The redundancy electrode and the stain preventing metal are formed on the same layer as the gate line. The method of claim 7, wherein The redundancy electrode and the stain preventing metal are formed of the same material as the gate line. The method of claim 7, wherein The stain preventing metal is formed to overlap with a portion of the pixel electrode. delete The method of claim 7, wherein And forming a contact hole in the gate insulating film and the passivation layer to electrically connect the stain preventing metal and the pixel electrode to each other through the contact hole.