KR970003586A - Semiconductor Wafer Cleaning Method - Google Patents

Semiconductor Wafer Cleaning Method Download PDF

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Publication number
KR970003586A
KR970003586A KR1019950019144A KR19950019144A KR970003586A KR 970003586 A KR970003586 A KR 970003586A KR 1019950019144 A KR1019950019144 A KR 1019950019144A KR 19950019144 A KR19950019144 A KR 19950019144A KR 970003586 A KR970003586 A KR 970003586A
Authority
KR
South Korea
Prior art keywords
wafer
semiconductor wafer
cleaning
pure water
cleaning method
Prior art date
Application number
KR1019950019144A
Other languages
Korean (ko)
Inventor
채광기
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950019144A priority Critical patent/KR970003586A/en
Publication of KR970003586A publication Critical patent/KR970003586A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

고집적 반도체 소자 제조 방법.Highly integrated semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

웨이퍼 클리닝시, 화학 용액에 담근 후 순수만으로 린스하게 되면, 세정 용기에서 웨이퍼가 나올때 표면에 잔존해 있는 파티클이 웨이퍼 표면에 묻어 나오게 되므로써, 제조 수율에 나쁜 영향을 주게 되는 문제점을 해결하고자 함.When cleaning the wafer, if rinsed with pure water only after soaking in chemical solution, the particles remaining on the surface will be buried on the surface of the wafer when the wafer comes out of the cleaning container, which will adversely affect the manufacturing yield.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

이소프로필 알콜(Isoprophyl Alchol : IPA)의 표면 장력을 이용하여 웨이퍼 표면에 파티클이 부착되는 것을 방지할 수 있는 웨이퍼 클리닝 방법을 제공하고자 함.It is intended to provide a wafer cleaning method that can prevent particles from adhering to the wafer surface by using the surface tension of isoprophyl alchol (IPA).

4. 발명의 중요한 용도4. Important uses of the invention

반도체 웨이퍼의 클리닝 공정에 이용됨.Used to clean semiconductor wafers.

Description

반도체 웨이퍼 클리닝 방법Semiconductor Wafer Cleaning Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 웨이퍼 클리닝 방법의 원리를 설명하는데 유용한 도면.1 is a diagram useful in explaining the principle of a wafer cleaning method according to the present invention.

Claims (4)

반도체 웨이퍼를 클리닝하는 방법에 있어서, 반도체 웨이퍼를 순수와 이소프로필 알콜이 소정의 비율로 혼합된 용액에 소정의 시간 동안 담궈 린스하는 단계와, 상기 반도체 웨이퍼를 소정의 속도로 상기 용액으로부터 꺼내는 단계 및, 상기 웨이퍼를 스핀 건조하는 단계를 포함해서 이루어진 웨이퍼 클리닝 방법.A method of cleaning a semiconductor wafer, the method comprising: rinsing a semiconductor wafer in a solution of pure water and isopropyl alcohol in a predetermined ratio for a predetermined time, releasing the semiconductor wafer from the solution at a predetermined speed; and And spin drying the wafer. 제1항에 있어서, 상기 순수와 이소프로필 알콜은 약 4 : 1의 비율로 혼합되어 있는 것을 특징으로 하는 웨이퍼 클리닝 방법.The method of claim 1, wherein the pure water and isopropyl alcohol are mixed at a ratio of about 4: 1. 제1항 또는 제2항에 있어서, 상기 린스하는 단계는 약 1분 동안 수행되고 상기 웨이퍼를 꺼내는 속도는 약 1㎝/sec인 것을 특징으로 하는 웨이퍼 클리닝 방법.The method of claim 1 or 2, wherein the rinsing step is performed for about 1 minute and the rate at which the wafer is taken out is about 1 cm / sec. 제1항 또는 제2항에 있어서, 상기 스핀 건조 단계는 순수를 웨이퍼에 플로우시키면서 스핀 건조가 수행되는 것을 특징으로 하는 웨이퍼 클리닝 방법.The wafer cleaning method according to claim 1 or 2, wherein the spin drying step is performed by spin drying while flowing pure water onto the wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950019144A 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method KR970003586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950019144A KR970003586A (en) 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950019144A KR970003586A (en) 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method

Publications (1)

Publication Number Publication Date
KR970003586A true KR970003586A (en) 1997-01-28

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ID=66526343

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950019144A KR970003586A (en) 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method

Country Status (1)

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KR (1) KR970003586A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100386113B1 (en) * 2001-02-13 2003-06-02 삼성전자주식회사 Wafer ashing method of semiconductor
KR100532950B1 (en) * 2003-04-16 2005-12-02 주식회사 하이닉스반도체 Wet-cleaning method of wafer
KR100546190B1 (en) * 1998-09-23 2006-04-12 주식회사 하이닉스반도체 Semiconductor device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100546190B1 (en) * 1998-09-23 2006-04-12 주식회사 하이닉스반도체 Semiconductor device manufacturing method
KR100386113B1 (en) * 2001-02-13 2003-06-02 삼성전자주식회사 Wafer ashing method of semiconductor
KR100532950B1 (en) * 2003-04-16 2005-12-02 주식회사 하이닉스반도체 Wet-cleaning method of wafer

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