KR940001301A - Contact window surface cleaning method - Google Patents

Contact window surface cleaning method Download PDF

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Publication number
KR940001301A
KR940001301A KR1019920009596A KR920009596A KR940001301A KR 940001301 A KR940001301 A KR 940001301A KR 1019920009596 A KR1019920009596 A KR 1019920009596A KR 920009596 A KR920009596 A KR 920009596A KR 940001301 A KR940001301 A KR 940001301A
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KR
South Korea
Prior art keywords
contact window
wafer
cleaning
ammonia water
surface cleaning
Prior art date
Application number
KR1019920009596A
Other languages
Korean (ko)
Other versions
KR950006976B1 (en
Inventor
김학렬
유진산
박인환
이원건
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019920009596A priority Critical patent/KR950006976B1/en
Publication of KR940001301A publication Critical patent/KR940001301A/en
Application granted granted Critical
Publication of KR950006976B1 publication Critical patent/KR950006976B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

반도체소자 제조방법에서, 금속을 증착시키기 전에, 접촉장 표면을 세정할때, 접촉창 식각 및 포토레지스트층을 제거할때 발생되는 유기물질 및 미립자 오염을 제거하기 위해, 웨이퍼롤 BOE(Buffered Oxide Etchant)에 담근후, 암모니아수에 의한 세정을 함으로써, 접촉장 식각시 발생되는 표면오염물질을 제거할 수 있다.In the semiconductor device fabrication method, wafer roll BOE (Buffered Oxide Etchant) is used to remove organic material and particulate contamination that occurs when the contact surface is cleaned, the contact window etching and the photoresist layer are removed before depositing the metal. ), And the surface contaminants generated during the etching of the contact field can be removed by washing with ammonia water.

Description

접촉창 표면세정방법Contact window surface cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (3)

반도체소자 제조공정에서 웨이퍼 표면에 금속을 증착시키기 위해 접촉창을 식각한후, 그 표면을 세정하기 위한 접촉창 표면세정방법에 있어서, 웨이퍼를 BOE(Buffered Oxide Etchant)용액에 담그는 제1단계와, 상기 웨이퍼를 탈이온화물로 세정하는 제2단계와, 상기 탈이온화물로 세정된 웨이퍼를 암모니아수로 세정하는 제3단계와, 상기 웨이퍼를 다시 탈이온화물로 세정한후 회전건조장치로 건조시키는 제4단계를 포함하는 것을 특징으로 하는 접촉창 표면세정방법.A method of cleaning a contact window for etching a contact window for depositing metal on a wafer surface in a semiconductor device manufacturing process, the method comprising: dipping a wafer in a buffered oxide etchant (BOE) solution; A second step of cleaning the wafer with deionized material, a third step of cleaning the wafer cleaned with deionized water with ammonia water, and a second step of cleaning the wafer with deionized water and then drying with a rotary dryer. Contact window surface cleaning method comprising the step of four. 제1항에 있어서, 상기 암모니아수로 세정하는 제3단계는, 용액용기에 탈이온화물 800cc정도를 넣는 단계와, 상기 탈이온화물의 온도가 20 내지 200℃가 되도록 가열하는 단계와, 상기 용액기에 암모니아수 2000cc정도를 넣은후, 과산화수소 200cc정도를 부어 혼합용액을 교반시키는 단계를 포함하는 것을 특징으로 하는 접촉창 표면세정방법.The method of claim 1, wherein the third step of washing with ammonia water includes: putting about 800 cc of deionized water into a solution container, heating the deionized water to a temperature of 20 to 200 ° C, and After putting about 2000cc of ammonia water, pouring about 200cc of hydrogen peroxide, the contact window surface cleaning method comprising the step of stirring the mixed solution. 제1항에 또는 2항에 있어서, 상기 암모니아수로 세정하는 제3단계의 시간은 30분이내인것을 특징으로 하는 접촉창 표면 세정방법.The method of claim 1 or 2, wherein the time of the third step of washing with ammonia water is within 30 minutes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920009596A 1992-06-03 1992-06-03 Surface cleaning method of contact hole KR950006976B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920009596A KR950006976B1 (en) 1992-06-03 1992-06-03 Surface cleaning method of contact hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920009596A KR950006976B1 (en) 1992-06-03 1992-06-03 Surface cleaning method of contact hole

Publications (2)

Publication Number Publication Date
KR940001301A true KR940001301A (en) 1994-01-11
KR950006976B1 KR950006976B1 (en) 1995-06-26

Family

ID=19334110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920009596A KR950006976B1 (en) 1992-06-03 1992-06-03 Surface cleaning method of contact hole

Country Status (1)

Country Link
KR (1) KR950006976B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323444B1 (en) * 1994-07-18 2002-05-13 Hynix Semiconductor Inc Method for fabricating metal interconnection of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323444B1 (en) * 1994-07-18 2002-05-13 Hynix Semiconductor Inc Method for fabricating metal interconnection of semiconductor device

Also Published As

Publication number Publication date
KR950006976B1 (en) 1995-06-26

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