KR100219071B1 - A cleaning method of semiconductor substrate - Google Patents

A cleaning method of semiconductor substrate Download PDF

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Publication number
KR100219071B1
KR100219071B1 KR1019960051405A KR19960051405A KR100219071B1 KR 100219071 B1 KR100219071 B1 KR 100219071B1 KR 1019960051405 A KR1019960051405 A KR 1019960051405A KR 19960051405 A KR19960051405 A KR 19960051405A KR 100219071 B1 KR100219071 B1 KR 100219071B1
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South Korea
Prior art keywords
solution
wafer
cleaning
mixed
oxide film
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KR1019960051405A
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Korean (ko)
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KR19980031843A (en
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백정권
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김영환
현대전자산업주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers

Abstract

1. 청구 범위에 기재된 발명이 속한 기술 분야1. The technical field to which the invention described in the claims belongs

반도체 소자 제조 공정Semiconductor device manufacturing process

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

자연산화막 제거를 위해 HF 용액으로 최종 클리닝 단계를 실시하는 경우에 웨이퍼가 소수성이 되어 파티클에 의한 오염이 발생한다는 문제점을 해결하고자 함.When the final cleaning step is performed with HF solution to remove the natural oxide film, the wafer becomes hydrophobic and contaminates caused by particles are solved.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

NH4OH/H2O2/H2O 용액을 이용하여 오염물질을 제거한 다음, H의 농도가 증가된 HF 용액을 이용하여 클리닝하므로써 웨이퍼 표면에 H-종단 실리콘을 증가시켜 후속 공정시 까지 자연산화막의 성장을 억제할 수 있는 웨이퍼 세정 방법을 제공하고자 함.Remove contaminants with NH 4 OH / H 2 O 2 / H 2 O solution and then increase H-terminated silicon on the wafer surface by cleaning with HF solution with increased H concentration An object of the present invention is to provide a wafer cleaning method that can suppress the growth of an oxide film.

4. 발명의 중요한 용도4. Important uses of the invention

웨이퍼 세정 공정에 이용됨.Used in wafer cleaning process.

Description

반도체 웨이퍼 세정 방법Semiconductor Wafer Cleaning Method

본 발명은 반도체 소자 제조 방법에 관한 것으로서, 특히 웨이퍼 기판에 콘택용 폴리실리콘을 증착하기 전에 웨이퍼상의 자연산화막 및 파티클을 제거하기 위해 웨이퍼를 세정하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method of cleaning a wafer to remove native oxide films and particles on a wafer before depositing contact polysilicon on the wafer substrate.

일반적으로, 반도체 소자 제조 공정중에는 웨이퍼 기판과 그 상부층과의 전기적 접속을 위한 콘택을 형성하는 공정이 있는데, 콘택 물질로는 주로 폴리실리콘이 사용되고 있다. 그런데, 종래에는 콘택홀을 형성한 후, 콘택 물질을 증착하기 전에 대기중에 노출되어 형성되는 자연 산화막 및 전단계의 공정에서 형성된 파티클을 제거하기 위해, 먼저 H2SO4/H2O2용액으로 클리닝을 실시한 다음, 약 50:1의 HF 용액을 이용하여 콘택 부위의 자연 산화막을 제거하는 공정이 이용되어 왔는데, 자연산화막 제거를 위해 HF 용액으로 최종 클리닝 단계를 실시하는 경우에 웨이퍼가 소수성이 되어 파티클에 의한 오염이 발생한다는 문제점이 있었다.In general, in the semiconductor device manufacturing process, there is a process of forming a contact for electrical connection between a wafer substrate and an upper layer thereof. Polysilicon is mainly used as a contact material. However, conventionally, after forming the contact hole, before removing the contact material, to remove the natural oxide film formed in the atmosphere and the particles formed in the previous step, first cleaning with H 2 SO 4 / H 2 O 2 solution After the process, a process of removing the native oxide film at the contact site using an HF solution of about 50: 1 has been used. When the final cleaning step is performed with the HF solution to remove the native oxide film, the wafer becomes hydrophobic There was a problem that the contamination by.

전술한 바와 같은 문제점을 해결하기 위하여 안출된 본 발명은, NH4OH/H2O2/H2O 용액을 이용하여 오염물질을 제거한 다음, H의 농도가 증가된 HF 용액을 이용하여 클리닝하므로써 웨이퍼 표면에 H-종단 실리콘을 증가시켜,후속 공정시 까지 자연산화막의 성장을 억제할 수 있는 웨이퍼 세정 방법을 제공하는 것을 목적으로 한다.The present invention devised to solve the problems described above, by removing the contaminants using the NH 4 OH / H 2 O 2 / H 2 O solution, and then by using a HF solution with an increased concentration of H It is an object of the present invention to provide a wafer cleaning method capable of increasing the H-terminated silicon on the wafer surface and suppressing the growth of the native oxide film until the subsequent step.

본 발명의 한 실시예에 따른 웨이퍼 세정 방법은, H2SO4/H2O2가 소정의 비율로 혼합된 용액을 이용하여 웨이퍼를 클리닝하는 단계; 소정의 비율로 혼합된 제1 HF 용액을 이용하여 웨이퍼를 클리닝하는 단계; NH4OH/H2O2/H2O가 소정의 비율로 혼합된 용액을 이용하여 웨이퍼를 클리닝하는 단계; 및 상기 제1 HF 용액 보다 H의 비율이 증가된 제2 HF 용액을 이용하여 웨이퍼를 클리닝하는 단계를 포함하는 것을 특징으로 한다.According to one or more exemplary embodiments, a wafer cleaning method includes cleaning a wafer using a solution in which H 2 SO 4 / H 2 O 2 is mixed at a predetermined ratio; Cleaning the wafer using the first HF solution mixed in a predetermined ratio; Cleaning the wafer using a solution in which NH 4 OH / H 2 O 2 / H 2 O is mixed at a predetermined ratio; And cleaning the wafer by using a second HF solution having an increased ratio of H than the first HF solution.

이하, 본 발명은 일실시예를 이용하여 보다 상세하게 설명되게 된다. 먼저, 콘택홀이 형성된 반도체 기판상에 콘택 물질로 폴리실리콘을 증착하기 전에, H2SO4와 H2O2가 약 4:1로 혼합된 용액을 이용하여 약 120℃의 온도에서 클리닝 공정을 실시하므로써, 유기물 오염물질을 제거하고 웨이퍼 표면을 친수성으로 만들어 준다. 다음에, 웨이퍼를 약 50:1의 HF 용액으로 클리닝하여 자연 산화막을 제거한다. 다음에, NH4OH/H2O2/H2O가 약 1:2:10의 비율로 혼합된 용액을 이용하여 약 80℃ 이하의 온도에서 메가소닉(Megasonic) 클리닝을 실시하여 소수성 기판에 존재하는 오염물질, 특히 HF 처리 후 기체와 액체의 계면(gas-liquid interface)에서의 파티클을 제거한다. 다음에는 약 100:1의 HF 용액을 이용한 웨이퍼 클리닝을 실시하여, F-종단(F-terminated) 실리콘은 감소시키고, H-종단(H-terminated) 실리콘을 증가시키므로써, 후속 공정인 폴리실리콘 증착시까지 자연산화막의 성장을 억제한다.Hereinafter, the present invention will be described in more detail using one embodiment. First, before depositing polysilicon as a contact material on the semiconductor substrate on which the contact hole is formed, a cleaning process is performed at a temperature of about 120 ° C. using a solution in which H 2 SO 4 and H 2 O 2 are mixed at about 4: 1. By doing this, organic contaminants are removed and the wafer surface is made hydrophilic. The wafer is then cleaned with about 50: 1 HF solution to remove the native oxide film. Next, using a solution in which NH 4 OH / H 2 O 2 / H 2 O is mixed at a ratio of about 1: 2: 10, megasonic cleaning is carried out at a temperature of about 80 ° C. or less, and the hydrophobic substrate is subjected to megasonic cleaning. Removes contaminants present, especially particles at the gas-liquid interface between the gas and the liquid after HF treatment. Subsequently, a wafer cleaning with an HF solution of about 100: 1 is performed to reduce the F-terminated silicon and increase the H-terminated silicon, thereby increasing polysilicon deposition. Suppresses the growth of natural oxide films until

전술한 바와 같은 본 발명을 이용하여 웨이퍼를 클리닝하므로써, 웨이퍼의 파티클 오염을 현저하게 감소시키고, 후속 공정시 까지 자연산화막의 성장을 억제할 수 있는 효과가 있다.By cleaning the wafer using the present invention as described above, particle contamination of the wafer is remarkably reduced and the growth of the natural oxide film can be suppressed until the subsequent process.

Claims (4)

H2SO4/H2O2가 소정의 비율로 혼합된 용액을 이용하여 웨이퍼를 클리닝하는 단계;Cleaning the wafer using a solution in which H 2 SO 4 / H 2 O 2 is mixed in a predetermined ratio; 소정의 비율로 혼합된 제1 HF 용액을 이용하여 웨이퍼를 클리닝하는 단계;Cleaning the wafer using the first HF solution mixed in a predetermined ratio; NH4OH/H2O2/H2O가 소정의 비율로 혼합된 용액을 이용하여 웨이퍼를 클리닝하는 단계; 및Cleaning the wafer using a solution in which NH 4 OH / H 2 O 2 / H 2 O is mixed at a predetermined ratio; And 상기 제1 HF 용액 보다 H의 비율이 증가된 제2 HF 용액을 이용하여 웨이퍼를 클리닝하는 단계를 포함해서 이루어진 웨이퍼 세정 방법.And cleaning the wafer using a second HF solution in which the ratio of H is increased than that of the first HF solution. 제 1항에 있어서,The method of claim 1, 상기 제1 HF 용액은 H 와 F가 약 50:1로 혼합된 용액이고, 상기 제2 HF 용액은 H 와 F가 약 100:1로 혼합된 용액인 것을 특징으로 하는 웨이퍼 세정 방법.Wherein the first HF solution is a solution of H and F mixed at about 50: 1, and the second HF solution is a solution of H and F mixed at about 100: 1. 제 1항 또는 제 2항에 있어서,The method according to claim 1 or 2, 상기 NH4OH/H2O2/H2O 용액을 이용하여 클리닝하는 단계는, NH4OH와 H2O2와 H2O가 약 1:2:10의 비율로 혼합된, 약 80℃ 이하의 용액에서, 메가소닉 방식으로 실시되는 것을 특징으로 하는 웨이퍼 세정 방법.In the cleaning using the NH 4 OH / H 2 O 2 / H 2 O solution, NH 4 OH, H 2 O 2, and H 2 O may be mixed at a ratio of about 1: 2: 10, about 80 ° C. A wafer cleaning method characterized in that it is carried out in a megasonic manner in the following solution. 제 3항에 있어서,The method of claim 3, 상기 H2SO4/H2O2용액을 이용한 클리닝 단계는 H2SO4와 H2O2가 약 4:1의 비율로 혼합된 용액에서, 약 120℃ 이하의 온도로 실시되는 것을 특징으로 하는 웨이퍼 세정 방법.The cleaning step using the H 2 SO 4 / H 2 O 2 solution is a solution of H 2 SO 4 and H 2 O 2 in a ratio of about 4: 1, characterized in that carried out at a temperature of about 120 ℃ or less Wafer cleaning method.
KR1019960051405A 1996-10-31 1996-10-31 A cleaning method of semiconductor substrate KR100219071B1 (en)

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