KR0116842Y1 - Cleaning bath having magnetic band for semiconductor process - Google Patents
Cleaning bath having magnetic band for semiconductor process Download PDFInfo
- Publication number
- KR0116842Y1 KR0116842Y1 KR2019910012872U KR910012872U KR0116842Y1 KR 0116842 Y1 KR0116842 Y1 KR 0116842Y1 KR 2019910012872 U KR2019910012872 U KR 2019910012872U KR 910012872 U KR910012872 U KR 910012872U KR 0116842 Y1 KR0116842 Y1 KR 0116842Y1
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- container
- wafer
- magnet
- cleaning
- water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안은 웨이퍼 세정용기에 관한 기술로, 웨이퍼 세정용기의 외측면에 띠자석을 테프론 코팅층에 의해 부착하여 DI수내에 부유하는 대전된 불순물들을 자력에 의해 끌어당겨 제거시키는 기술이다.The present invention relates to a technology for a wafer cleaning container, in which a band magnet is attached to an outer surface of the wafer cleaning container by a Teflon coating layer to attract and remove charged impurities suspended in DI water by magnetic force.
Description
제 1 도는 본 고안에 따른 웨이퍼 세정용 자석조의 분리사시도.1 is an exploded perspective view of a magnet bath for cleaning a wafer according to the present invention.
제 2 도는 제 1 도의 선 A-A를 절취한 상태의 절단면도.2 is a cross-sectional view of the state taken along the line A-A of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1및3 : 제 1 및 제 2 용기 4및11 : 제 1 및 제 2 유입홀1 and 3: 1st and 2nd container 4 and 11: 1st and 2nd inflow hole
5및6 : 제 2 및 제 1 받침대 1및7A : 고정부재5 and 6: 2nd and 1st base 1 and 7A: fixing member
8및8A : 연장부재 9및9A : 조정자8 and 8A: extension member 9 and 9A: adjuster
12및12A : 이동부재12 and 12A: moving member
본 고안은 웨이퍼 세정용 자석조에 관한 것으로, 특히 웨이퍼(wafer)를 세정하는 DI수(Deionized water) 세정용 용기에 띠자석을 테프론(Teflon) 코팅에 의해 부착하여 전기 극성을 가진 부유 파티클(particle)을 제거시키는 웨이퍼 세정용 자석조에 관한 것이다.The present invention relates to a magnet bath for wafer cleaning, and in particular, a floating magnet having electrical polarity is attached to a magnet by Teflon coating on a DI water cleaning container for cleaning a wafer. It relates to a magnet bath for cleaning the wafer to remove the.
일반적으로 웨이퍼 가공시 웨이퍼 표면에는 불순물들이 부착되어 있으므로 H2SO₄또는H2O₂용액으로 이를 1차적으로 제거한후 DI수에 의해 웨이퍼를 세정하게 된다. 즉, 웨이퍼 세정용기에 웨이퍼를 집어넣고 DI수로서 세정할때 웨이퍼가 세정되는 순간 화학적 잔유물이 발생되어 DI수내에서 양전하 및 음전하로 대전된 불순물들이 웨이퍼 표면에 달라붙고 DI표면위에 있게 되는데, DI표면에서 발생되는 표면장력 때문에 이 불순물들은 제거할 수 없게 된다.Generally, impurities are attached to the surface of the wafer during wafer processing, so the wafer is cleaned by DI water after first removing it with H2SO₄ or H2O2 solution. In other words, when the wafer is put into the wafer cleaning container and cleaned with DI water, the chemical residues are generated when the wafer is cleaned, and impurities positively and negatively charged in the DI water adhere to the surface of the wafer and are on the DI surface. Because of the surface tension generated in the process, these impurities cannot be removed.
따라서 본 고안은 웨이퍼 세정용기에 띠자석을 부착하여 DI표면에서의 표면장력을 파괴시켜 웨이퍼 표면에 부착된 대전된 불순물들을 끌어당겨 DI수가 오버 플로우(Over Flow)될 때 같이 오버 플로우되게하여 웨이퍼 표면에 부착된 불순물을 제거하는데 그 목적이 있다.Therefore, the present invention attaches a band magnet to the wafer cleaning container, destroys the surface tension on the DI surface, attracts the charged impurities attached to the wafer surface, and causes the DI surface to overflow as the DI water overflows. Its purpose is to remove impurities attached to it.
본 고안의 웨이퍼 세정용 자석조는 웨이퍼를 수용하며 일측면에 DI수를 유입시키는 제1 유입홀이 형성된 제1 용기와, 상기 제1 용기를 수용하며 자신의 저부에 설치된 제 1 및 제 2 받침대의 각 조정자를 조절하여 경사각을 조절할 수 있는 제 2 용기로 이루어진 웨이퍼 세정용기에서, 상기 제 1 용기의 외측면 소정위치에 테프론 코팅층에 의해 띠자석이 부착, 구성된 것을 특징으로 한다.The magnet cleaning wafer of the present invention includes a first container having a first inlet hole for accommodating a wafer and injecting DI water into one side thereof, and a first and second pedestal for accommodating the first container and installed at a bottom thereof. In the wafer cleaning container consisting of a second container capable of adjusting the inclination angle by adjusting each adjuster, characterized in that the band magnet is attached to the predetermined position on the outer surface of the first container by a Teflon coating layer.
이하, 첨부된 도면을 참조하여 본 고안을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제 1도는 본 고안에 따른 웨이퍼 세정용 자석조의 분리사시도로서, 제 1 유입홀(4)이 형성된 중공의 직육면체 형상의 제 1용기(1)의 일측면을 제외한 3개의 외측면 상부 각각의 면에 띠자석(2)이 테프론 코팅에 의해 부착된다.FIG. 1 is an exploded perspective view of a magnet bath for cleaning a wafer according to the present invention, wherein the first inlet hole 4 has a hollow rectangular parallelepiped-shaped first container 1 except for one side thereof. The strip magnet 2 is attached by Teflon coating.
상기 제 1 용기(1)는 제 2 용기(3)에 수용되는데, 상기 제 1 용기(1)의 제 1 유입홀(4)은 제 2 용기(3)의 제 2 유입홀(11)과 일치되며, 띠자석(2)이 부착된 부위는 제 2 용기(3)에 수용되지 않는다.The first container 1 is housed in a second container 3, wherein the first inlet hole 4 of the first container 1 coincides with the second inlet hole 11 of the second container 3. The portion to which the band magnet 2 is attached is not accommodated in the second container 3.
또한, 제 2 용기(3)의 저부에는 4개의 받침대가 구성되는데, 좌측의 제 1 및 제 2 받침대(6 및 5)각각은 제 2 용기(3)에 고착된 고정부재(7,7A)와 이 고정부재(7,7A)에서 각기 연장되며 그 직경이 상기 고정부재(7,7A)의 직경보다 작은 연장부재(8,8A) 및 각 연장부재(8,8A)를 수용하며 조정자(9,9A)가 설치된 이동부재(12,12A)로 구성된다.In addition, four pedestals are formed at the bottom of the second container 3, and the first and second pedestals 6 and 5 on the left side are fixed members 7 and 7A fixed to the second container 3, respectively. The fixing members 7 and 7A respectively extend from the fixing members 7 and 7A and have diameters smaller than the diameters of the fixing members 7 and 7A and the extension members 8 and 8A, respectively. It consists of moving members 12 and 12A provided with 9A).
상기와 같이 구성된 웨이퍼 세정용 자석조의 세정관계를 설명하면 다음과 같다.The cleaning relationship of the magnet bath for wafer cleaning configured as described above is as follows.
먼저 제 1 및 제 2 받침대(6 및 5)에 설치된 조정자(9 및 9A)를 조정하여 제 2 용기(3)를 우측으로 3o내지 10o경사지게 한다음, 다수의 웨이퍼(도시안됨)를 제 1 용기(1)에 안착시키고, 호스(도시안됨)등을 통한 DI수를 제 2 유입홀(11) 및 제 1 유입홀(4)을 통해 제 1 용기(1)내에 유입시킨다. 그러므로 DI수는 좌,우측 및 전면을 통해 오버 플로우되는데, 이때 띠자석(2)의 자계에 의해 웨이퍼 표면 및 DI표면에서 생기는 표면장력을 파괴시켜 대전된 부유파티클은 자력에 의해 끌어당겨져 DI수와 함께 오버플로우된다.First adjust the adjusters 9 and 9A installed on the first and second pedestals 6 and 5 to incline the second container 3 to 3 o to 10 o to the right and then remove a plurality of wafers (not shown). 1 is seated in the container 1, DI water through a hose (not shown) or the like is introduced into the first container 1 through the second inlet hole 11 and the first inlet hole (4). Therefore, DI water overflows through the left, right, and front surfaces. At this time, the magnetic field of the strip magnet 2 destroys the surface tension generated on the wafer surface and the DI surface, and the suspended particles charged by the magnetic force are attracted by the magnetic force. Will overflow together.
제 2도는 제 1도의 선 A-A를 절취한 상태의 단면도로서, 띠자석(2)이 테프론 코팅층(10)에 의해 제 1 용기(1)의 외측면에 부착되어 있는 상태를 보다 명확히 도시하고 있다.FIG. 2 is a cross-sectional view of the state taken along the line A-A of FIG. 1, showing the state in which the band magnet 2 is attached to the outer surface of the first container 1 by the Teflon coating layer 10 more clearly.
상술한 바와같이 본원고안은 웨이퍼 세정용기에 띠자석을 부착하여, 띠자석에 의한 자계에 의해 DI수내에 부유하는 대전된 불순물들을 제거할 수 있는 탁월한 효과가 있다.As described above, the present application attaches a band magnet to the wafer cleaning container, and has an excellent effect of removing charged impurities suspended in DI water by a magnetic field caused by the band magnet.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910012872U KR0116842Y1 (en) | 1991-08-14 | 1991-08-14 | Cleaning bath having magnetic band for semiconductor process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910012872U KR0116842Y1 (en) | 1991-08-14 | 1991-08-14 | Cleaning bath having magnetic band for semiconductor process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930005660U KR930005660U (en) | 1993-03-22 |
| KR0116842Y1 true KR0116842Y1 (en) | 1998-04-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910012872U KR0116842Y1 (en) | 1991-08-14 | 1991-08-14 | Cleaning bath having magnetic band for semiconductor process |
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| Country | Link |
|---|---|
| KR (1) | KR0116842Y1 (en) |
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1991
- 1991-08-14 KR KR2019910012872U patent/KR0116842Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR930005660U (en) | 1993-03-22 |
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