JPH05243200A - Method of cleaning glass substrate - Google Patents

Method of cleaning glass substrate

Info

Publication number
JPH05243200A
JPH05243200A JP4419792A JP4419792A JPH05243200A JP H05243200 A JPH05243200 A JP H05243200A JP 4419792 A JP4419792 A JP 4419792A JP 4419792 A JP4419792 A JP 4419792A JP H05243200 A JPH05243200 A JP H05243200A
Authority
JP
Japan
Prior art keywords
glass substrate
substrate
pure water
cleaning
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4419792A
Other languages
Japanese (ja)
Inventor
Eiji Nishikata
英治 西形
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4419792A priority Critical patent/JPH05243200A/en
Publication of JPH05243200A publication Critical patent/JPH05243200A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To provide a method of cleaning a glass substrate, where static electricity is prevented from being generated the glass substrate when it is rinsed as moving up and down in pure water so as to protect a pattern against damage caused by electric discharge and to prevent dust from attaching the glass substrate. CONSTITUTION:A glass substrate 2 held in a substrate holder 1 is made to move up and down in pure water 4 in a cleaning tank 3 to be rinsed, a magnetic field is applied vertical to the moving direction of the glass substrate 2 to move positive or negative charge 5 generated on the glass substrate 2 to tire side of the glass substrate 2, and charge 5 is transferred to a ground wire 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は,ガラス基板の洗浄方法
に関する。近年,電子部品の高速,高密度化にともな
い,集積回路の素子パターンもますます微細化され,ウ
エハプロセスに使用するマスク,或いはレチクルのガラ
ス基板上の極微量のゴミでもデバイスの品質特性,歩留
りに大きな影響を与える。このため,ガラス基板の洗浄
には細心の注意を必要とし,静電気により付着する微細
なゴミの除去方法が必要とされている。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a glass substrate. In recent years, with the increase in speed and density of electronic parts, the device patterns of integrated circuits have become finer and finer, and even the minute amount of dust on the mask used in the wafer process or on the glass substrate of the reticle, device quality characteristics and yield. Have a great influence on. For this reason, meticulous care is required in cleaning the glass substrate, and a method for removing fine dust that adheres due to static electricity is required.

【0002】[0002]

【従来の技術】図3は従来例の説明図である。図におい
て,12はガラス基板, 13は金属パターンである。
2. Description of the Related Art FIG. 3 is an explanatory view of a conventional example. In the figure, 12 is a glass substrate and 13 is a metal pattern.

【0003】集積回路(LSI)用ガラスマスクは,素
子の微細化が進む中で,ますます高い品質が要求されて
いる。現在,このガラスマスクの洗浄方法としては,超
音波を使ったり,純水や酸・アルカリ・有機溶剤等の薬
品を使用したりして,ゴミ,或いは異物の除去し,ま
た,薬品残渣,脂汚れ等を落としている。
The glass masks for integrated circuits (LSI) are required to have higher and higher quality as the elements become finer. Currently, as the method for cleaning this glass mask, ultrasonic waves are used, or chemicals such as pure water, acids, alkalis, and organic solvents are used to remove dust or foreign substances, and chemical residues or grease are removed. Dirt is removed.

【0004】何れの方法も洗浄の最終プロセスには,純
水のリンス(すすぎ)を行うのが一般的であるが,純水
(De-Ionized Water) は絶縁物であるため, ガラス基板
12と水との摩擦により,静電気が発生し,それがある程
度ガラス基板12上に蓄積すると放電し,それによって,
図3に平面図,断面図で示すように,ガラス基板12上の
金属パターン13が破壊されることがある。
In either method, the final process of cleaning is generally performed by rinsing pure water, but since pure water (De-Ionized Water) is an insulator, the glass substrate
Due to the friction between 12 and water, static electricity is generated, and when it accumulates on the glass substrate 12 to a certain extent, it is discharged, whereby
As shown in the plan view and sectional view of FIG. 3, the metal pattern 13 on the glass substrate 12 may be destroyed.

【0005】[0005]

【発明が解決しようとする課題】従って,微細パターン
が多数ある集積回路用のガラスマスクにおいては,この
放電によるパターン破壊は致命的なダメージをマスクに
与えることとなる。
Therefore, in a glass mask for an integrated circuit having a large number of fine patterns, the pattern destruction due to this discharge causes fatal damage to the mask.

【0006】また,パターンの形成されていないガラス
基板でも,この静電気により,一度ゴミが除去された後
でも,純水から引上げ後,空中に浮遊する極微細なゴミ
等が静電気により吸い寄せられて, 汚染のもととなる。
Further, even in a glass substrate on which no pattern is formed, even if dust is once removed by the static electricity, ultrafine dust floating in the air after being pulled from pure water is attracted by the static electricity. It causes pollution.

【0007】本発明は上記問題点を解消するために,ガ
ラス基板上に発生する静電気を抑制し,パターンの放電
破壊やゴミの付着を防止することを目的として提供され
る。
In order to solve the above-mentioned problems, the present invention is provided for the purpose of suppressing static electricity generated on a glass substrate and preventing discharge damage of a pattern and adhesion of dust.

【0008】[0008]

【課題を解決するための手段】図1は本発明の原理説明
図である。図において,1は基板ホルダ,2はガラス基
板,3は洗浄槽,4は純水,5は電荷,6は接地線,7
は樹脂枠,8は金属細線,9はイオナイザーガン,10は
ガス, 11は電磁石である。
FIG. 1 illustrates the principle of the present invention. In the figure, 1 is a substrate holder, 2 is a glass substrate, 3 is a cleaning tank, 4 is pure water, 5 is electric charge, 6 is a ground wire, 7
Is a resin frame, 8 is a thin metal wire, 9 is an ionizer gun, 10 is a gas, and 11 is an electromagnet.

【0009】本発明では,前記問題点を解決するため
に,基板ホルダ1内に保持したガラス基板2を洗浄槽3
内の純水4中で上下動させてリンス洗浄する方法におい
て,図1(a)に透視斜視図,図1(b)に基板の側面
からの断面図,図1(c)に基板の正面からの立面図で
示すように,基板ホルダ1内に保持したガラス基板2を
洗浄槽3内の純水4中で上下動させてリンス洗浄する方
法であって,該ガラス基板2の上下動に対して直角方向
に磁界をかけ, 該ガラス基板2上に発生する正負の電荷
5をそれぞれ該ガラス基板2面の片側に移動させ, 該電
荷5を接地線6に移動させることにより,図1(b)に
示すうよに,前記ガラス基板2を保持する前記基板ホル
ダ1は,絶縁性樹脂枠7に密植して植え込まれ, 且つ,
接地線6に接続される金属細線8によって該ガラス基板
2の端部を保持する構造を有することにより,前記ガラ
ス基板2を上下動して,該純水4面より引き上げる時
に, 該ガラス基板2の表面にイオナイザーガン9により
ガス10を吹きつけることにより,更に,前記ガラス基板
2の上下動に同期して,磁界のSN方向を変化させるこ
とにより達成される。
In the present invention, in order to solve the above problems, the glass substrate 2 held in the substrate holder 1 is washed with a cleaning tank 3
In the method of rinsing by moving up and down in pure water 4 in the inside, FIG. 1 (a) is a perspective view, FIG. 1 (b) is a sectional view from the side of the substrate, and FIG. As shown in the elevation view from FIG. 1, the glass substrate 2 held in the substrate holder 1 is vertically moved in pure water 4 in the cleaning tank 3 to rinse the glass substrate 2, and the glass substrate 2 is vertically moved. By applying a magnetic field in the direction perpendicular to the positive and negative charges 5 generated on the glass substrate 2 to one side of the surface of the glass substrate 2 and moving the charges 5 to the ground line 6, As shown in (b), the substrate holder 1 holding the glass substrate 2 is densely planted in an insulating resin frame 7, and
By having a structure in which the end portion of the glass substrate 2 is held by the thin metal wire 8 connected to the ground wire 6, the glass substrate 2 can be moved up and down and pulled up from the pure water 4 surface. This is accomplished by spraying a gas 10 on the surface of the glass with an ionizer gun 9 and further changing the SN direction of the magnetic field in synchronization with the vertical movement of the glass substrate 2.

【0010】[0010]

【作用】本発明では,最終の純水リンスのプロセスにお
いて,リンスする純水中で,ガラス基板を上下に動かす
時,ガラス基板に直角に磁界をかけると,ガラス基板上
の磁界により,発生した電荷を片側に集めて接地線(ア
ース)を通して逃がすこととなり,静電気の影響を最小
限に抑えることができる。
In the present invention, in the final deionized water rinsing process, when the glass substrate is moved up and down in the rinsing deionized water, a magnetic field is applied at a right angle to the glass substrate, which is generated by the magnetic field on the glass substrate. The electric charge is collected on one side and escaped through the ground wire (earth), and the influence of static electricity can be minimized.

【0011】[0011]

【実施例】図2は本発明の一実施例の説明図である。図
において,1は基板ホルダ,2はガラス基板,3は洗浄
槽,4は純水,5は電荷,6は接地線,7は樹脂枠,8
は金属細線,9はイオナイザーガン,10はガス, 11は電
磁石である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is an explanatory view of an embodiment of the present invention. In the figure, 1 is a substrate holder, 2 is a glass substrate, 3 is a cleaning tank, 4 is pure water, 5 is electric charge, 6 is a ground wire, 7 is a resin frame, 8
Is a fine metal wire, 9 is an ionizer gun, 10 is a gas, and 11 is an electromagnet.

【0012】図2(a)に示すように,一点鎖線で示し
た洗浄槽3中に入れるガラス基板2を収納する樹脂性の
基板ホルダ1のガラス基板保持部分の樹脂枠7は細い白
金の金属細線8を密植したもので,その点線内の拡大図
を図2(b)に上面図で,図2(c)に斜視図で示すよ
うに,ガラス基板2の端面を金属細線8が両側から挟む
構造となっている。そして密植した白金線は根本で一つ
纏められて接地線6となっている。また,点線で外形を
示した電磁石11が洗浄槽3内のガラス基板2の表裏面に
相対する形で,洗浄槽3の外側の両側に設けられてい
る。
As shown in FIG. 2 (a), the resin frame 7 in the glass substrate holding portion of the resinous substrate holder 1 for accommodating the glass substrate 2 contained in the cleaning tank 3 shown by the chain line is a thin platinum metal. As shown in FIG. 2 (b), which is a top view and FIG. 2 (c) is a perspective view, in which the thin metal wires 8 are densely planted, the end surface of the glass substrate 2 is covered with metal thin wires 8 from both sides. It has a sandwich structure. And the densely planted platinum wires are grouped together at the root to form the ground wire 6. Further, electromagnets 11 whose outer shape is shown by a dotted line are provided on both outer sides of the cleaning tank 3 so as to face the front and back surfaces of the glass substrate 2 in the cleaning tank 3.

【0013】ガラス基板2は純水4中に浸漬したあと,
基板ホルダ1の把手を上下動させてガラス基板2上の薬
品類を洗いながしてリンスを行う。その上下動のとき
に,絶縁物である超純水4とガラス基板2が摩擦して静
電気が起き,図1(c)に示すように,ガラス基板2上
に正負の電荷5が発生する。
After immersing the glass substrate 2 in pure water 4,
The handle of the substrate holder 1 is moved up and down to rinse the chemicals on the glass substrate 2 and rinse them. At the time of the vertical movement, the ultrapure water 4 which is an insulator rubs against the glass substrate 2 to generate static electricity, and positive and negative charges 5 are generated on the glass substrate 2 as shown in FIG.

【0014】本発明では電磁石11に電流を流して, 60
0ガウスの磁界をガラス基板2の上下動に同期してか
け,ガラス基板2の周囲端面が接地線6に接続した金属
細線8で保持されているので,電荷5は徐々にガラス基
板2の端面に移動して,接地線6より逃がして,ガラス
基板2上の電荷5が消滅することとなる。
In the present invention, a current is passed through the electromagnet 11
Since a magnetic field of 0 Gauss is applied in synchronization with the vertical movement of the glass substrate 2, and the peripheral end face of the glass substrate 2 is held by the thin metal wire 8 connected to the ground wire 6, the electric charge 5 gradually increases. The electric charge 5 on the glass substrate 2 disappears by moving to the ground wire 6 and escaping from the ground wire 6.

【0015】また,ガラス基板2を引き上げる際に,同
時にイオナイザーガン9より,エア,または窒素ガス等
をガラス基板2の面上に1kg以下の低圧で吹きつけ
て,静電気の発生を防止する。
At the same time when the glass substrate 2 is pulled up, air, nitrogen gas or the like is blown from the ionizer gun 9 onto the surface of the glass substrate 2 at a low pressure of 1 kg or less to prevent generation of static electricity.

【0016】[0016]

【発明の効果】以上説明したように,本発明によれば,
ガラス基板への静電気の蓄積が少なくなり,ガラス基板
上の微細パターンの静電破壊を防止することができる。
As described above, according to the present invention,
The accumulation of static electricity on the glass substrate is reduced, and it is possible to prevent electrostatic breakdown of the fine pattern on the glass substrate.

【0017】また,最終洗浄後のガラス基板に静電気に
よるゴミや異物の吸着がなくなり,ガラス基板の清浄度
が保てるので,本発明は集積回路の品質向上に寄与する
ところが大きい。
Further, since the dust and the foreign substances are not adsorbed on the glass substrate after the final cleaning due to static electricity, and the cleanliness of the glass substrate can be maintained, the present invention greatly contributes to the quality improvement of the integrated circuit.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.

【図2】 本発明の一実施例の説明図FIG. 2 is an explanatory diagram of an embodiment of the present invention.

【図3】 従来例の説明図FIG. 3 is an explanatory diagram of a conventional example.

【符号の説明】[Explanation of symbols]

1 基板ホルダ 2 ガラス基板 3 洗浄槽 4 純水 5 電荷 6 接地線 7 樹脂枠 8 金属細線 9 イオナイザーガン 10 ガス 11 電磁石 1 substrate holder 2 glass substrate 3 cleaning tank 4 pure water 5 electric charge 6 ground wire 7 resin frame 8 thin metal wire 9 ionizer gun 10 gas 11 electromagnet

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基板ホルダ(1) 内に保持したガラス基板
(2) を洗浄槽(3) 内の純水(4) 中で上下動させてリンス
洗浄する方法であって,該ガラス基板(2) の上下動に対
して直角方向に磁界をかけ, 該ガラス基板(2)上に発生
する正負の電荷(5) をそれぞれ該ガラス基板(2) 面の片
側に移動させ,該電荷(5) を接地線(6) に移動させるこ
とを特徴とするガラス基板の洗浄方法。
1. A glass substrate held in a substrate holder (1).
A method of rinsing by moving (2) vertically in pure water (4) in a cleaning tank (3), applying a magnetic field in a direction perpendicular to the vertical movement of the glass substrate (2), A glass characterized in that positive and negative charges (5) generated on the glass substrate (2) are moved to one side of the glass substrate (2) surface respectively, and the charges (5) are moved to the ground wire (6). Substrate cleaning method.
【請求項2】 前記ガラス基板(2) を保持する前記基板
ホルダ(1) は, 絶縁性樹脂枠(7) に密植して植え込ま
れ, 且つ,前記接地線(6) に接続される金属細線(8) に
よって該ガラス基板(2) の端部を保持する構造を有する
ことを特徴とする請求項1記載のガラス基板洗浄方法。
2. The substrate holder (1) for holding the glass substrate (2) is a metal that is densely implanted in an insulating resin frame (7) and is connected to the ground wire (6). The glass substrate cleaning method according to claim 1, wherein the glass substrate (2) has a structure in which an end portion of the glass substrate (2) is held by a thin wire (8).
【請求項3】 前記ガラス基板(2) を上下動して,該純
水(4) 面より引き上げる時に, 該ガラス基板(2) の表面
にイオナイザーガン(9) によりガス(10)を吹きつけるこ
とを特徴とする請求項1,或いは,2記載のガラス基板
洗浄方法。
3. When the glass substrate (2) is moved up and down and pulled up from the surface of the pure water (4), a gas (10) is blown onto the surface of the glass substrate (2) by an ionizer gun (9). The method for cleaning a glass substrate according to claim 1 or 2, characterized in that.
【請求項4】 前記ガラス基板(2) の上下動に同期し
て,磁界のSN方向を変化させることを特徴とする請求
項1〜3記載のガラス基板洗浄方法。
4. The glass substrate cleaning method according to claim 1, wherein the SN direction of the magnetic field is changed in synchronization with the vertical movement of the glass substrate (2).
JP4419792A 1992-03-02 1992-03-02 Method of cleaning glass substrate Withdrawn JPH05243200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4419792A JPH05243200A (en) 1992-03-02 1992-03-02 Method of cleaning glass substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4419792A JPH05243200A (en) 1992-03-02 1992-03-02 Method of cleaning glass substrate

Publications (1)

Publication Number Publication Date
JPH05243200A true JPH05243200A (en) 1993-09-21

Family

ID=12684850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4419792A Withdrawn JPH05243200A (en) 1992-03-02 1992-03-02 Method of cleaning glass substrate

Country Status (1)

Country Link
JP (1) JPH05243200A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990047949A (en) * 1997-12-06 1999-07-05 윤종용 Method for removing metal particles in a semiconductor cleaning process and a wet cleaning apparatus to which the method is applied
US6647998B2 (en) * 2001-06-20 2003-11-18 Taiwan Semiconductor Manufacturing Co. Ltd. Electrostatic charge-free solvent-type dryer for semiconductor wafers
CN102810458A (en) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 Solution of WSI (tungsten silicide) linear granules
KR101594703B1 (en) * 2014-11-10 2016-02-16 주식회사 엘지실트론 Wafer cleaner
CN111389773A (en) * 2020-03-25 2020-07-10 尚妙根 Self-cleaning formula camera that environmental monitoring used

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990047949A (en) * 1997-12-06 1999-07-05 윤종용 Method for removing metal particles in a semiconductor cleaning process and a wet cleaning apparatus to which the method is applied
US6647998B2 (en) * 2001-06-20 2003-11-18 Taiwan Semiconductor Manufacturing Co. Ltd. Electrostatic charge-free solvent-type dryer for semiconductor wafers
CN102810458A (en) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 Solution of WSI (tungsten silicide) linear granules
KR101594703B1 (en) * 2014-11-10 2016-02-16 주식회사 엘지실트론 Wafer cleaner
CN111389773A (en) * 2020-03-25 2020-07-10 尚妙根 Self-cleaning formula camera that environmental monitoring used
CN111389773B (en) * 2020-03-25 2021-04-23 山东海慧环境科技有限公司 Self-cleaning formula camera that environmental monitoring used

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990518