JPH06291102A - Cleaning equipment for substrate - Google Patents

Cleaning equipment for substrate

Info

Publication number
JPH06291102A
JPH06291102A JP9554093A JP9554093A JPH06291102A JP H06291102 A JPH06291102 A JP H06291102A JP 9554093 A JP9554093 A JP 9554093A JP 9554093 A JP9554093 A JP 9554093A JP H06291102 A JPH06291102 A JP H06291102A
Authority
JP
Japan
Prior art keywords
cleaning
substrate
opening
liquid
independent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9554093A
Other languages
Japanese (ja)
Inventor
Hideaki Kawashima
英顕 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP9554093A priority Critical patent/JPH06291102A/en
Publication of JPH06291102A publication Critical patent/JPH06291102A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To provide a cleaning equipment for substrate in which a wafer can be subjected to different cleaning processing on the surface and rear thereof while eliminating the need for discharging the cleaning liquid from a cleaning bath at the time of mounting or demounting a wafer. CONSTITUTION:A cleaning bath 10 is partitioned by a barrier 13 into two independent cleaning baths 11, 12 where the barrier 13 is provided with an opening 14 for holding a wafer 1 and movable shutters 18, 19 for opening/closing the opening 14 is also provided. Cleaning liquid supply means 25, 26 feed cleaning liquid 27, 28 through nozzles 21, 22. After the opening 14 is closed by means of the shutters 18, 19 and the wafer 1 is held at the opening 14, the opening 14 is opened by means of the shutters 18, 19 and the wafer 1 is cleaned, on the surface 1a and the rear 1b thereof, with the cleaning liquids 27, 28. Since the wafer 1 is cleaned separately on the surface and rear thereof, the cleaning liquids 27, 28 are prevented from mixing at the time of mounting/demounting of the wafer 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えば半導体装置の製
造工程においてウエハ等の基板を洗浄するための洗浄装
置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus for cleaning a substrate such as a wafer in a semiconductor device manufacturing process.

【0002】[0002]

【従来の技術】半導体装置の製造工程においては、ウエ
ハ等の半導体基板の表面を清浄に保つ必要がある。例え
ば、フォトエッチングの際にウエハの表面に異物が付着
している等の汚染があると、配線ショートや断線の原因
となり、また、金属を含む異物が表面に付着した状態で
ウエハを加熱すると、その部分が合金化してpn接合を
ショートさせてしまう等の原因となる。従って、製品の
性能と信頼性とを向上させるためには、ウエハの表面の
汚染物質を極力低減させる必要がある。
2. Description of the Related Art In the process of manufacturing a semiconductor device, it is necessary to keep the surface of a semiconductor substrate such as a wafer clean. For example, contaminants such as foreign matter adhering to the surface of the wafer during photoetching may cause wiring short-circuiting or disconnection, and if the wafer is heated with foreign matter containing metal adhering to the surface, That portion causes alloying and short-circuiting of the pn junction. Therefore, in order to improve the performance and reliability of the product, it is necessary to reduce contaminants on the surface of the wafer as much as possible.

【0003】このため、従来から、半導体装置の製造工
程においては、ウエハへの酸化膜生成前の前洗浄、フォ
トエッチング後の後洗浄等、ウエハを各種の薬液や純水
等の洗浄液によって洗浄している。そして、従来の一般
的な洗浄装置は、複数のウエハを収納したウエハキャリ
ヤごと、または、ウエハを一枚ずつ、洗浄液が満たされ
た洗浄槽内に浸漬することによって、ウエハの洗浄を行
っている。
Therefore, conventionally, in the process of manufacturing a semiconductor device, the wafer is cleaned with various cleaning solutions such as a chemical solution and pure water, such as pre-cleaning before forming an oxide film on the wafer and post-cleaning after photo-etching. ing. Then, the conventional general cleaning apparatus cleans the wafers by immersing each wafer carrier containing a plurality of wafers or one wafer at a time in a cleaning tank filled with a cleaning liquid. .

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上述し
たように従来の洗浄装置においては、洗浄槽内の洗浄液
にウエハを浸漬することにより、ウエハに付着している
異物を除去している。このため、常にウエハの表面及び
裏面ともに同様の洗浄処理が行われ、表面と裏面とにつ
いて異なる洗浄処理を行うことができないものであっ
た。
However, as described above, in the conventional cleaning apparatus, the foreign matter adhering to the wafer is removed by immersing the wafer in the cleaning liquid in the cleaning tank. Therefore, the same cleaning process is always performed on the front surface and the back surface of the wafer, and different cleaning processes cannot be performed on the front surface and the back surface.

【0005】ところで、ウエハに付着する異物は、その
表面及び裏面で種類やサイズ等が異なり、また、管理す
る異物サイズの許容範囲も表面及び裏面で異なる。即
ち、ウエハの表面は半導体素子を形成するために鏡面処
理を施しているが、ウエハの裏面は表面ほどの鏡面処理
を行っていない。また、各種装置による他のプロセス処
理の際には、ウエハの裏面を保持するようにしている。
このため、一般的に、ウエハの表面よりも裏面に多くの
異物が付着している。
By the way, the types and sizes of foreign substances adhering to the wafer are different on the front and back sides, and the allowable range of foreign substance sizes to be managed is different on the front and back sides. That is, the front surface of the wafer is mirror-finished to form a semiconductor element, but the back surface of the wafer is not as mirror-finished as the front surface. Further, the back surface of the wafer is held at the time of other process processing by various devices.
Therefore, in general, more foreign matter is attached to the back surface than the front surface of the wafer.

【0006】このようなウエハを同一の洗浄液中で洗浄
する場合、裏面に対応した強力な洗浄液による処理を行
おうとしても、半導体素子を形成するための表面に悪影
響が及ぶため、強力な洗浄処理は行えなかった。また、
ウエハを同一の洗浄液中で洗浄すると、せっかく洗浄し
ても裏面に付着していた異物が表面に再付着する恐れも
あった。従って、従来の洗浄装置では、異物除去率が低
く、不充分な洗浄によって次工程へ異物が持ち込まれる
危険性があった。そして、異物除去率を高くするために
は、少なくとも二種類以上のシーケンス(処理)を行っ
たり、弱性の洗浄液により長時間にわたって洗浄を行っ
たりする必要があり、洗浄処理の効率が悪いという問題
があった。
When such a wafer is cleaned in the same cleaning solution, even if an attempt is made to perform a processing with a strong cleaning solution corresponding to the back surface, the surface for forming the semiconductor element is adversely affected, so a strong cleaning processing is performed. Could not be done. Also,
If the wafer is cleaned in the same cleaning liquid, foreign matter that had adhered to the back surface may re-adhere to the front surface even if the cleaning is carried out. Therefore, in the conventional cleaning apparatus, the foreign matter removal rate is low, and there is a risk that foreign matter may be brought into the next process due to insufficient cleaning. In order to increase the foreign matter removal rate, it is necessary to perform at least two types of sequences (treatments) or to perform cleaning with a weak cleaning liquid for a long time, which is a problem of inefficient cleaning processing. was there.

【0007】そこで本発明は、基板の表面と裏面とに対
して異なる洗浄処理を行うことができ、しかも基板の着
脱時に洗浄槽内から洗浄液を排出する必要がない基板の
洗浄装置を提供することを目的とする。
Therefore, the present invention provides a substrate cleaning apparatus that can perform different cleaning processes on the front and back surfaces of a substrate and that does not require a cleaning liquid to be discharged from the cleaning tank when the substrate is attached and detached. With the goal.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明による基板の洗浄装置は、洗浄槽と、この洗
浄槽を2つの独立洗浄槽に仕切る隔壁と、前記各独立洗
浄槽内にそれぞれ洗浄液を供給する洗浄液供給手段と、
基板の外形に対応させて前記隔壁に設けられた開口部
と、この開口部の周囲において前記基板の外周部を保持
する基板保持手段と、前記開口部を液密状態で開閉する
シャッターとを具備し、前記シャッターにより前記開口
部を閉塞した状態で前記基板を前記基板保持手段により
前記開口部に保持させた後、前記シャッターにより前記
開口部を開放して前記基板の両面をそれぞれ前記各独立
洗浄槽内の洗浄液により洗浄するように構成したもので
ある。
In order to achieve the above object, a substrate cleaning apparatus according to the present invention comprises a cleaning tank, a partition partitioning the cleaning tank into two independent cleaning tanks, and each of the independent cleaning tanks. Cleaning liquid supply means for supplying cleaning liquid to
An opening provided in the partition wall corresponding to the outer shape of the substrate, a substrate holding unit that holds the outer peripheral portion of the substrate around the opening, and a shutter that opens and closes the opening in a liquid-tight state. Then, after the substrate is held in the opening by the substrate holding means in a state where the opening is closed by the shutter, the opening is opened by the shutter and the both sides of the substrate are individually cleaned. It is configured to be washed with the washing liquid in the tank.

【0009】また、本発明による基板の洗浄装置は、前
記隔壁にシャッターを設けずに、前記隔壁の開口部が前
記各独立洗浄槽外に出る着脱位置と前記各独立洗浄槽内
に入る洗浄位置との間で移動するように、その隔壁を液
密状態で移動自在に構成し、前記隔壁を着脱位置に移動
させた状態で前記基板を前記基板保持手段により前記開
口部に保持させた後、前記隔壁を洗浄位置に移動させて
前記基板の両面をそれぞれ前記各独立洗浄槽内の洗浄液
により洗浄するように構成したものである。
Further, in the substrate cleaning apparatus according to the present invention, a shutter is not provided on the partition wall, and an opening / closing position at which the opening of the partition wall comes out of each of the independent cleaning tanks and a cleaning position at which the opening of each partition enters the independent cleaning tank. So that the partition wall is movable in a liquid-tight state so that the partition wall is moved to the attachment / detachment position, and the substrate is held in the opening by the substrate holding means, The partition is moved to a cleaning position, and both surfaces of the substrate are cleaned with the cleaning liquid in each of the independent cleaning tanks.

【0010】さらに、本発明による基板の洗浄装置は、
前記各独立洗浄槽のうち、一方の独立洗浄槽内に洗浄液
を供給する洗浄液供給手段を設け、他方の独立洗浄槽内
に非液性洗浄手段を設け、前記基板の両面をそれぞれ前
記各独立洗浄槽内の洗浄液と非液性洗浄手段とにより洗
浄するように構成したものである。
Further, the substrate cleaning apparatus according to the present invention is
Of the respective independent cleaning tanks, a cleaning liquid supply means for supplying a cleaning liquid is provided in one independent cleaning tank, and a non-liquid cleaning means is provided in the other independent cleaning tank so that both sides of the substrate are individually cleaned. The cleaning liquid in the tank and the non-liquid cleaning means are used for cleaning.

【0011】[0011]

【作用】上記のように構成された本発明によれば、開口
部を有する隔壁に基板保持手段により基板が保持される
ので、その基板の表面と裏面とが完全に分離された状態
で隔壁の両側の独立洗浄槽内に露呈される。そして、各
独立洗浄槽内の薬液や純水等の洗浄液または回転ブラシ
等の非液性洗浄手段によって、基板の表面と裏面とに対
して異なる洗浄処理が最適に行われる。
According to the present invention configured as described above, since the substrate is held by the substrate holding means in the partition having the opening, the partition of the partition is completely separated from the front surface and the back surface of the substrate. It is exposed in the independent cleaning tanks on both sides. Then, different cleaning treatments are optimally performed on the front surface and the back surface of the substrate by a cleaning liquid such as a chemical liquid or pure water in each independent cleaning tank or a non-liquid cleaning means such as a rotating brush.

【0012】しかも、本発明によれば、基板の表面と裏
面とが分離されて洗浄されるものでありながら、隔壁の
開口部に対して基板を着脱する際には、シャッターによ
って開口部が閉塞されるか、または隔壁自体の移動によ
って開口部が各独立洗浄槽外に出るので、各独立洗浄槽
内の洗浄液の混合或いは一方から他方への流出が完全に
防止される。このため、基板の着脱時に独立洗浄槽内か
ら洗浄液を排出する必要がない。
Further, according to the present invention, the front surface and the back surface of the substrate are separated and cleaned, but when the substrate is attached to and detached from the opening of the partition wall, the opening is closed by the shutter. The openings are exposed to the outside of each independent cleaning tank by the movement of the partition wall itself, so that the mixing of the cleaning liquid in each independent cleaning tank or the outflow from one to the other is completely prevented. Therefore, it is not necessary to discharge the cleaning liquid from the independent cleaning tank when the substrate is attached or detached.

【0013】[0013]

【実施例】以下、本発明をウエハの洗浄装置に適用した
実施例を図面を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment in which the present invention is applied to a wafer cleaning apparatus will be described below with reference to the drawings.

【0014】まず、図1〜図3は第1実施例を示すもの
であり、図1はウエハ着脱時の装置全体の断面図、図2
はウエハ洗浄時の装置全体の断面図、図3は装置の隔壁
部分の拡大断面図である。
First, FIGS. 1 to 3 show a first embodiment, and FIG. 1 is a sectional view of the entire apparatus when a wafer is attached and detached, and FIG.
3 is a sectional view of the entire apparatus during wafer cleaning, and FIG. 3 is an enlarged sectional view of a partition wall portion of the apparatus.

【0015】図1及び図2に示すように、上方が開放さ
れた洗浄槽10のほぼ中央に隔壁13が垂直状に設けら
れ、この隔壁13によって洗浄槽10が左右2つの独立
洗浄槽11及び12に仕切られている。なお、隔壁13
は洗浄槽10の上方にも延出されている。
As shown in FIGS. 1 and 2, a partition wall 13 is provided vertically at approximately the center of the cleaning tank 10 whose upper side is open, and the partition wall 13 causes the cleaning tank 10 to have two independent cleaning tanks 11 on the left and right. It is divided into 12. The partition wall 13
Also extends above the cleaning tank 10.

【0016】洗浄槽10内における隔壁13のほぼ中央
には、ウエハ1の外径よりも少し小さな径を有する円形
の開口部14が形成されている。また、隔壁13内には
上方から開口されたスリット状のウエハ挿入部15が形
成されている。そして、図3に示すように、ウエハ挿入
部15内で開口部14の周囲には真空吸着用の複数個の
小孔16が開孔され、これら小孔16は隔壁13内の連
通路17を通して真空吸引装置(図示せず)に接続され
ている。なお、複数個の小孔16に代えて円環状の溝を
設けてもよい。
A circular opening 14 having a diameter slightly smaller than the outer diameter of the wafer 1 is formed substantially at the center of the partition wall 13 in the cleaning tank 10. Further, a slit-shaped wafer insertion portion 15 opened from above is formed in the partition wall 13. Then, as shown in FIG. 3, a plurality of small holes 16 for vacuum suction are formed around the opening 14 in the wafer insertion part 15, and these small holes 16 pass through the communication passage 17 in the partition wall 13. It is connected to a vacuum suction device (not shown). An annular groove may be provided instead of the plurality of small holes 16.

【0017】そして、図1及び図2に示すように、隔壁
13の開口部14の両側には、一対のシャッター18及
び19が設けられている。これらシャッター18及び1
9は、図1に示すように開口部14を閉塞する閉塞位置
と、図2に示すように開口部14を開放する開放位置と
の間で、駆動機構20によって液密状態で移動自在に構
成されている。
As shown in FIGS. 1 and 2, a pair of shutters 18 and 19 are provided on both sides of the opening 14 of the partition wall 13. These shutters 18 and 1
Reference numeral 9 is configured to be movable in a liquid-tight state by the drive mechanism 20 between a closed position for closing the opening 14 as shown in FIG. 1 and an open position for opening the opening 14 as shown in FIG. Has been done.

【0018】また、隔壁13によって仕切られた独立洗
浄槽11及び12内には、一対の噴射ノズル21及び2
2が隔壁13の開口部14を挟んで対向配置されてい
る。噴射ノズル21及び22は供給管23及び24の先
端に設けられ、これら供給管23及び24は洗浄液供給
装置25及び26に接続されている。これら洗浄液供給
装置25及び26によって独立洗浄槽11及び12内に
同種または異種の洗浄液27及び28が供給されるが、
これらの供給時間も調節可能となっている。
In the independent cleaning tanks 11 and 12 partitioned by the partition wall 13, a pair of jet nozzles 21 and 2 are provided.
2 are opposed to each other with the opening 14 of the partition wall 13 interposed therebetween. The injection nozzles 21 and 22 are provided at the tips of the supply pipes 23 and 24, and these supply pipes 23 and 24 are connected to the cleaning liquid supply devices 25 and 26. The cleaning liquid supply devices 25 and 26 supply the same or different cleaning liquids 27 and 28 into the independent cleaning tanks 11 and 12, respectively.
The supply time of these is also adjustable.

【0019】なお、独立洗浄槽11及び12の底面には
排出管29及び30が設けられており、通常の洗浄時は
閉状態となっている。また、独立洗浄槽11及び12、
隔壁13、シャッター18及び19等は、所定の薬液や
超純水の特性を維持するための材質を必要とし、例えば
テフロン樹脂や高純度石英ガラス等が使用される。
Discharge pipes 29 and 30 are provided on the bottoms of the independent cleaning tanks 11 and 12, and are closed during normal cleaning. In addition, the independent cleaning tanks 11 and 12,
The partition wall 13, the shutters 18 and 19 and the like require a material for maintaining the characteristics of a predetermined chemical solution or ultrapure water, and for example, Teflon resin or high-purity quartz glass is used.

【0020】上述のように構成された洗浄装置において
は、まず、図1に示すように、シャッター18及び19
が閉塞位置へ移動されて隔壁13の開口部14が閉塞さ
れた状態で、独立洗浄槽11及び12内に洗浄液27及
び28が満たされている。即ち、独立洗浄槽11及び1
2が隔壁13により仕切られ、その隔壁13の開口部1
4がシャッター18及び19により液密状態で閉塞され
ているので、独立洗浄槽11及び12内の洗浄液27及
び28は完全に分離され、混合することは全くない。
In the cleaning device constructed as described above, first, as shown in FIG.
Is moved to the closed position and the opening 14 of the partition wall 13 is closed, the independent cleaning tanks 11 and 12 are filled with the cleaning liquids 27 and 28. That is, the independent cleaning tanks 11 and 1
2 is partitioned by a partition wall 13 and the opening 1 of the partition wall 13
Since 4 is closed in a liquid-tight state by shutters 18 and 19, the cleaning liquids 27 and 28 in the independent cleaning tanks 11 and 12 are completely separated and never mixed.

【0021】この状態で、ウエハ搬送手段(図示せず)
によりウエハ1が一枚ずつ隔壁13のウエハ挿入部15
内に挿入され、開口部14の周囲の小孔16部分での吸
引作用によってウエハ1の外周部が吸着されて保持され
る。
In this state, wafer transfer means (not shown)
The wafer insertion portion 15 of the partition wall 13
The outer peripheral portion of the wafer 1 is sucked and held by the suction action of the small holes 16 around the opening 14.

【0022】次に、図2に示すように、シャッター18
及び19が開放位置へ移動されて、隔壁13の開口部1
4が開放される。これにより、ウエハ1の表面1aと裏
面1bとが完全に分離された状態で、独立洗浄槽11及
び12内の洗浄液27及び28に接触する。噴射ノズル
21及び22からの洗浄液27及び28の噴流によっ
て、ウエハ1の表面1aと裏面1bとがそれぞれ別々に
洗浄される。
Next, as shown in FIG.
And 19 are moved to the open position and the opening 1 of the partition wall 13 is
4 is open. As a result, the front surface 1a and the back surface 1b of the wafer 1 are brought into contact with the cleaning liquids 27 and 28 in the independent cleaning tanks 11 and 12 in a state where they are completely separated. The front surface 1a and the back surface 1b of the wafer 1 are separately cleaned by the jets of the cleaning liquids 27 and 28 from the spray nozzles 21 and 22, respectively.

【0023】なお、これら独立洗浄槽11及び12はオ
ーバーフロー式であり、溢れた洗浄液27及び28は上
縁から排出される。さらに、除去された異物を迅速に独
立洗浄槽11及び12内から排出するため、独立洗浄槽
11及び12の上縁には適当な切欠部11a及び12a
が設けられており、溢れる洗浄液27及び28の流速が
速められている。
The independent cleaning tanks 11 and 12 are of the overflow type, and the overflowing cleaning liquids 27 and 28 are discharged from the upper edge. Furthermore, in order to quickly discharge the removed foreign matter from the independent cleaning tanks 11 and 12, appropriate cutouts 11a and 12a are formed at the upper edges of the independent cleaning tanks 11 and 12.
Is provided, and the flow rates of the overflowing cleaning liquids 27 and 28 are increased.

【0024】次に、所定の洗浄処理が終了すると、図1
に示すように、シャッター18及び19が再び閉塞位置
へ移動されて、隔壁13の開口部14が閉塞される。こ
の状態で、ウエハ1がウエハ搬送手段によって隔壁13
から取り外され、次の未洗浄のウエハ1が新たに装着さ
れる。
Next, when the predetermined cleaning process is completed, as shown in FIG.
As shown in, the shutters 18 and 19 are again moved to the closed position, and the opening 14 of the partition wall 13 is closed. In this state, the wafer 1 is transferred to the partition wall 13 by the wafer transfer means.
Then, the next uncleaned wafer 1 is newly mounted.

【0025】このように、ウエハ1の表面1a及び裏面
1bに付着した異物に対して各々高い除去効果を有した
洗浄液27及び28によって、ウエハ1を効率よく洗浄
することができる。例えば、表面1aよりも異物が多い
裏面1bについて強力な洗浄液28による処理を行うこ
とができ、半導体素子を形成する表面1aに悪影響を及
ぼすことなく、短時間で異物を除去することができる。
As described above, the wafers 1 can be efficiently cleaned by the cleaning liquids 27 and 28 which have a high effect of removing foreign matters attached to the front surface 1a and the rear surface 1b of the wafer 1, respectively. For example, the back surface 1b containing more foreign matter than the front surface 1a can be treated with the strong cleaning liquid 28, and the foreign matter can be removed in a short time without adversely affecting the front surface 1a forming the semiconductor element.

【0026】しかも、隔壁13の開口部14に対するウ
エハ1の着脱時には、開口部14がシャッター18及び
19により閉塞されるので、洗浄液27及び28の混合
を完全に防止することができる。従って、ウエハ1の着
脱時に洗浄液27及び28を排出する必要がなく、複数
のウエハ1の連続的な洗浄処理を迅速に行うことができ
る。
Moreover, when the wafer 1 is attached to or detached from the opening 14 of the partition wall 13, the opening 14 is closed by the shutters 18 and 19, so that mixing of the cleaning liquids 27 and 28 can be completely prevented. Therefore, it is not necessary to discharge the cleaning liquids 27 and 28 when the wafer 1 is attached and detached, and the continuous cleaning process of the plurality of wafers 1 can be rapidly performed.

【0027】なお、本実施例では、開口部14の両側に
シャッター18及び19を設けているので、洗浄中にシ
ャッター18または19を閉塞位置へ移動させて、ウエ
ハ1の表面1aまたは裏面1bに対する洗浄時間を調整
することが可能である。また、噴射ノズル21及び22
による洗浄液27及び28の噴射を停止することによっ
て、洗浄時間を調整することも可能である。なお、上述
した例では異なる洗浄液27及び28を使用したが、同
一の洗浄液を使用する場合には、特に上記洗浄時間の調
整が有効である。
In this embodiment, since the shutters 18 and 19 are provided on both sides of the opening 14, the shutter 18 or 19 is moved to the closed position during the cleaning so that the front surface 1a or the back surface 1b of the wafer 1 can be removed. It is possible to adjust the cleaning time. In addition, the injection nozzles 21 and 22
It is also possible to adjust the cleaning time by stopping the spraying of the cleaning liquids 27 and 28 by. Although the different cleaning liquids 27 and 28 are used in the above-mentioned example, when the same cleaning liquid is used, the adjustment of the cleaning time is particularly effective.

【0028】次に、図4及び図5は第2実施例を示すも
のであり、図4はウエハ着脱時の装置全体の断面図、図
5はウエハ洗浄時の装置全体の断面図である。
Next, FIGS. 4 and 5 show a second embodiment. FIG. 4 is a sectional view of the entire apparatus when the wafer is attached and detached, and FIG. 5 is a sectional view of the entire apparatus when the wafer is cleaned.

【0029】この第2実施例においては、洗浄槽10を
2つの独立洗浄槽11及び12に仕切る隔壁13′自体
が移動自在に構成されている。即ち、隔壁13′は、図
4に示すように開口部14が独立洗浄槽11及び12外
に出る着脱位置と、図5に示すように開口部14が独立
洗浄槽11及び12内に入る洗浄位置との間で、駆動機
構20′によって液密状態で移動自在に構成されてい
る。
In the second embodiment, the partition wall 13 'itself for partitioning the cleaning tank 10 into two independent cleaning tanks 11 and 12 is movable. That is, as for the partition wall 13 ′, as shown in FIG. 4, the opening 14 is attached / detached to the outside of the independent cleaning tanks 11 and 12, and the opening 14 is inserted into the independent cleaning tanks 11 and 12 as shown in FIG. A drive mechanism 20 'is configured to be movable between the position and the position in a liquid-tight state.

【0030】この例によれば、図4に示すように隔壁1
3′が着脱位置に移動された状態で、ウエハ1が開口部
14部分に保持されるが、このとき、隔壁13′によっ
て独立洗浄槽11及び12間は分離されているので、洗
浄液27及び28の混合は完全に防止される。そして、
図5に示すように隔壁13′が洗浄位置に移動されるこ
とによって、ウエハ1の表面1aと裏面1bとがそれぞ
れ洗浄液27と洗浄液28とに接触する。
According to this example, as shown in FIG.
The wafer 1 is held in the opening 14 with 3'moved to the attachment / detachment position. At this time, since the independent cleaning tanks 11 and 12 are separated by the partition wall 13 ', the cleaning liquids 27 and 28 are used. Is completely prevented. And
As shown in FIG. 5, when the partition wall 13 ′ is moved to the cleaning position, the front surface 1 a and the back surface 1 b of the wafer 1 come into contact with the cleaning liquid 27 and the cleaning liquid 28, respectively.

【0031】次に、図6は第3実施例におけるウエハ洗
浄時の装置全体の断面図である。
Next, FIG. 6 is a sectional view of the entire apparatus during wafer cleaning in the third embodiment.

【0032】この第3実施例においては、上記第1実施
例と同様な隔壁13によって仕切られた一方の独立洗浄
槽11内に洗浄液27が満たされ、他方の独立洗浄槽1
2′内に非液性洗浄手段が設けられている。この非液性
洗浄手段はモータ31により回転駆動される回転ブラシ
32によって構成されており、回転ブラシ32がウエハ
1の裏面1bに接触することにより異物が除去される。
なお、この例においては、隔壁13の開口部14の独立
洗浄槽11側のみにシャッター18が設けられており、
このシャッター18によって洗浄液27の流出が防止さ
れる。
In the third embodiment, one independent cleaning tank 11 partitioned by the partition wall 13 similar to that of the first embodiment is filled with the cleaning liquid 27 and the other independent cleaning tank 1 is used.
A non-liquid cleaning means is provided in 2 '. This non-liquid cleaning means is composed of a rotating brush 32 which is rotationally driven by a motor 31, and foreign matter is removed when the rotating brush 32 contacts the back surface 1b of the wafer 1.
In this example, the shutter 18 is provided only on the independent cleaning tank 11 side of the opening 14 of the partition wall 13,
The shutter 18 prevents the cleaning liquid 27 from flowing out.

【0033】次に、図7は第4実施例におけるウエハ洗
浄時の装置全体の断面図である。
Next, FIG. 7 is a sectional view of the entire apparatus during wafer cleaning in the fourth embodiment.

【0034】この第4実施例においては、上記第2実施
例と同様な移動自在の隔壁13′を用いた構成に、上記
第3実施例と同様な回転ブラシ32による非液性洗浄手
段を設けたものである。
In the fourth embodiment, a non-liquid cleaning means using a rotary brush 32 similar to that of the third embodiment is provided in the construction using the movable partition wall 13 'similar to that of the second embodiment. It is a thing.

【0035】なお、第3及び第4実施例のように、回転
ブラシ32を用いた場合には、他方の独立洗浄槽12′
を密閉チャンバーとし、気体供給装置33から供給管3
4を介して独立洗浄槽12′内に不活性ガス等を供給し
て、回転ブラシ32により除去された異物をガスと共に
排出管35から排出するのが好ましい。また、非液性洗
浄手段は、回転ブラシ32のような機械的洗浄に限ら
ず、独立洗浄槽12′内に供給される薬性ガスや清浄空
気等による気体洗浄としてもよい。
When the rotating brush 32 is used as in the third and fourth embodiments, the other independent cleaning tank 12 'is used.
As a closed chamber, and the gas supply device 33 to the supply pipe 3
It is preferable to supply an inert gas or the like into the independent cleaning tank 12 ′ via 4 to discharge the foreign matter removed by the rotating brush 32 together with the gas from the discharge pipe 35. Further, the non-liquid cleaning means is not limited to mechanical cleaning such as the rotary brush 32, but may be gas cleaning using chemical gas or clean air supplied into the independent cleaning tank 12 '.

【0036】以上、本発明の実施例に付き説明したが、
本発明は上記実施例に限定されることなく、本発明の技
術的思想に基づいて各種の有効な変更並びに応用が可能
である。なお、本実施例では異物除去のための洗浄処理
に付いて述べたが、洗浄液として各種のエッチング液や
純水等を用いることにより、ウエットエッチング処理を
行うことができるのは勿論である。また、本実施例では
洗浄対象をウエハとしたが、露光用のマスクやレチクル
等の各種の基板を洗浄可能なことは言うまでもない。
The embodiments of the present invention have been described above.
The present invention is not limited to the above embodiments, and various effective modifications and applications are possible based on the technical idea of the present invention. Although the cleaning process for removing foreign matter has been described in the present embodiment, it is needless to say that the wet etching process can be performed by using various etching solutions or pure water as the cleaning solution. Further, although the cleaning target is the wafer in this embodiment, it goes without saying that various substrates such as a mask for exposure and a reticle can be cleaned.

【0037】[0037]

【発明の効果】以上説明したように、本発明によれば、
基板の表面と裏面とを完全に分離した状態で洗浄するこ
とによって、その表面及び裏面の各々に付着した異物に
対して高い除去効果を有する最適な洗浄を行うことがで
き、また、裏面に付着していた異物が表面に再付着する
ことも防止できる。従って、異物除去率が極めて高い効
率的な洗浄を行うことができ、歩留りの向上を図ること
ができる。
As described above, according to the present invention,
By cleaning with the front and back surfaces of the substrate completely separated, it is possible to perform optimum cleaning that has a high removal effect for foreign substances adhering to each of the front and back surfaces, and also to adhere to the back surface. It is also possible to prevent the foreign matter that had been attached to the surface from reattaching. Therefore, it is possible to perform efficient cleaning with a very high foreign matter removal rate, and it is possible to improve the yield.

【0038】しかも、本発明によれば、上記のように基
板の表裏両面を分離して洗浄できるものでありながら、
隔壁の開口部に対する基板の着脱時には独立洗浄槽内の
洗浄液の混合或いは流出を完全に防止することができ
る。従って、基板の着脱時に独立洗浄槽内から洗浄液を
排出することなく洗浄処理を連続的に行うことができ、
スループットの大幅な向上並びに著しい低コスト化を図
ることができる。
Moreover, according to the present invention, both the front and back surfaces of the substrate can be separated and cleaned as described above,
Mixing or outflow of the cleaning liquid in the independent cleaning tank can be completely prevented when the substrate is attached to or detached from the opening of the partition. Therefore, the cleaning process can be continuously performed without discharging the cleaning liquid from the independent cleaning tank when the substrate is attached or detached,
It is possible to significantly improve the throughput and significantly reduce the cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明をウエハの洗浄装置に適用した第1実施
例におけるウエハ着脱時の装置全体の断面図である。
FIG. 1 is a sectional view of the entire apparatus when a wafer is attached and detached in a first embodiment in which the present invention is applied to a wafer cleaning apparatus.

【図2】上記第1実施例におけるウエハ洗浄時の装置全
体の断面図である。
FIG. 2 is a sectional view of the entire apparatus when cleaning a wafer in the first embodiment.

【図3】上記第1実施例における装置の隔壁部分の拡大
断面図である。
FIG. 3 is an enlarged cross-sectional view of a partition wall portion of the device according to the first embodiment.

【図4】本発明の第2実施例におけるウエハ着脱時の装
置全体の断面図である。
FIG. 4 is a cross-sectional view of the entire apparatus when a wafer is attached and detached in the second embodiment of the present invention.

【図5】上記第2実施例におけるウエハ洗浄時の装置全
体の断面図である。
FIG. 5 is a cross-sectional view of the entire apparatus during wafer cleaning in the second embodiment.

【図6】本発明の第3実施例におけるウエハ洗浄時の装
置全体の断面図である。
FIG. 6 is a cross-sectional view of the entire apparatus when cleaning a wafer according to a third embodiment of the present invention.

【図7】本発明の第4実施例におけるウエハ洗浄時の装
置全体の断面図である。
FIG. 7 is a cross-sectional view of the entire apparatus when cleaning a wafer according to a fourth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 ウエハ 1a 表面 1b 裏面 10 洗浄槽 11、12、12′独立洗浄槽 13、13′隔壁 14 開口部 15 ウエハ挿入部 16 真空吸着用の小孔 17 連通路 18、19 シャッター 20、20′駆動機構 21、22 噴射ノズル 23、24、34 供給管 25、26 洗浄液供給装置 27、28 洗浄液 29、30、35 排出管 31 モータ 32 回転ブラシ 33 気体供給装置 DESCRIPTION OF SYMBOLS 1 Wafer 1a Front surface 1b Back surface 10 Cleaning tank 11, 12, 12 'Independent cleaning tank 13, 13' Partition wall 14 Opening portion 15 Wafer inserting portion 16 Small hole for vacuum suction 17 Communication path 18, 19 Shutter 20, 20 'Drive mechanism 21, 22 Injection nozzle 23, 24, 34 Supply pipe 25, 26 Cleaning liquid supply device 27, 28 Cleaning liquid 29, 30, 35 Discharge pipe 31 Motor 32 Rotating brush 33 Gas supply device

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 洗浄槽と、この洗浄槽を2つの独立洗浄
槽に仕切る隔壁と、前記各独立洗浄槽内にそれぞれ洗浄
液を供給する洗浄液供給手段と、基板の外形に対応させ
て前記隔壁に設けられた開口部と、この開口部の周囲に
おいて前記基板の外周部を保持する基板保持手段と、前
記開口部を液密状態で開閉するシャッターとを具備し、 前記シャッターにより前記開口部を閉塞した状態で前記
基板を前記基板保持手段により前記開口部に保持させた
後、前記シャッターにより前記開口部を開放して前記基
板の両面をそれぞれ前記各独立洗浄槽内の洗浄液により
洗浄するように構成した基板の洗浄装置。
1. A cleaning tank, partition walls for partitioning the cleaning tank into two independent cleaning tanks, cleaning liquid supply means for supplying a cleaning liquid into each of the independent cleaning tanks, and partition walls corresponding to the outer shape of the substrate. An opening portion provided, a substrate holding means for holding the outer peripheral portion of the substrate around the opening portion, and a shutter for opening and closing the opening portion in a liquid-tight state are provided, and the opening portion is closed by the shutter. In such a state, the substrate is held in the opening by the substrate holding means, and then the opening is opened by the shutter to clean both surfaces of the substrate with the cleaning liquid in each of the independent cleaning tanks. Substrate cleaning equipment.
【請求項2】 洗浄槽と、この洗浄槽を2つの独立洗浄
槽に仕切る隔壁と、前記各独立洗浄槽内にそれぞれ洗浄
液を供給する洗浄液供給手段と、基板の外形に対応させ
て前記隔壁に設けられた開口部と、この開口部の周囲に
おいて前記基板の外周部を保持する基板保持手段とを具
備し、 前記隔壁の開口部が前記各独立洗浄槽外に出る着脱位置
と前記各独立洗浄槽内に入る洗浄位置との間で移動する
ように、その隔壁を液密状態で移動自在に構成し、 前記隔壁を着脱位置に移動させた状態で前記基板を前記
基板保持手段により前記開口部に保持させた後、前記隔
壁を洗浄位置に移動させて前記基板の両面をそれぞれ前
記各独立洗浄槽内の洗浄液により洗浄するように構成し
た基板の洗浄装置。
2. A cleaning tank, partition walls for partitioning the cleaning tank into two independent cleaning tanks, cleaning liquid supply means for supplying a cleaning liquid into each of the independent cleaning tanks, and the partition walls corresponding to the outer shape of the substrate. An opening provided and a substrate holding means for holding the outer peripheral portion of the substrate around the opening, and the opening / closing position of the partition opening outside the independent cleaning tank and the independent cleaning. The partition is configured so as to be movable in a liquid-tight state so as to move between the partition and the cleaning position that enters the tank, and the substrate is held by the substrate holding means while the partition is moved to the attachment / detachment position. The substrate cleaning apparatus is configured to move the partition wall to a cleaning position and then clean both surfaces of the substrate with the cleaning liquid in each of the independent cleaning tanks.
【請求項3】 洗浄槽と、この洗浄槽を2つの独立洗浄
槽に仕切る隔壁と、前記一方の独立洗浄槽内に洗浄液を
供給する洗浄液供給手段と、前記他方の独立洗浄槽内に
設けられた非液性洗浄手段と、基板の外形に対応させて
前記隔壁に設けられた開口部と、この開口部の周囲にお
いて前記基板の外周部を保持する基板保持手段と、前記
開口部を液密状態で開閉するシャッターとを具備し、 前記シャッターにより前記開口部を閉塞した状態で前記
基板を前記基板保持手段により前記開口部に保持させた
後、前記シャッターにより前記開口部を開放して前記基
板の両面をそれぞれ前記各独立洗浄槽内の洗浄液と非液
性洗浄手段とにより洗浄するように構成した基板の洗浄
装置。
3. A cleaning tank, a partition for partitioning the cleaning tank into two independent cleaning tanks, a cleaning liquid supply means for supplying a cleaning liquid into the one independent cleaning tank, and a cleaning liquid supply means provided in the other independent cleaning tank. Non-liquid cleaning means, an opening provided in the partition wall corresponding to the outer shape of the substrate, a substrate holding means for holding the outer peripheral portion of the substrate around the opening, and the opening being liquid-tight. A shutter that opens and closes in a state, wherein the substrate is held by the substrate holding means in the opening while the opening is closed by the shutter, and then the opening is opened by the shutter. A substrate cleaning apparatus configured to clean both surfaces of the substrate with the cleaning liquid in each of the independent cleaning tanks and the non-liquid cleaning means.
【請求項4】 洗浄槽と、この洗浄槽を2つの独立洗浄
槽に仕切る隔壁と、前記一方の独立洗浄槽内に洗浄液を
供給する洗浄液供給手段と、前記他方の独立洗浄槽内に
設けられた非液性洗浄手段と、基板の外形に対応させて
前記隔壁に設けられた開口部と、この開口部の周囲にお
いて前記基板の外周部を保持する基板保持手段とを具備
し、 前記隔壁の開口部が前記各独立洗浄槽外に出る着脱位置
と前記各独立洗浄槽内に入る洗浄位置との間で移動する
ように、その隔壁を液密状態で移動自在に構成し、 前記隔壁を着脱位置に移動させた状態で前記基板を前記
基板保持手段により前記開口部に保持させた後、前記隔
壁を洗浄位置に移動させて前記基板の両面をそれぞれ前
記各独立洗浄槽内の洗浄液と非液性洗浄液とにより洗浄
するように構成した基板の洗浄装置。
4. A cleaning tank, a partition for partitioning the cleaning tank into two independent cleaning tanks, a cleaning liquid supply means for supplying a cleaning liquid into the one independent cleaning tank, and a cleaning liquid supply means provided in the other independent cleaning tank. A non-liquid cleaning means, an opening provided in the partition wall corresponding to the outer shape of the substrate, and a substrate holding means for holding the outer peripheral portion of the substrate around the opening, The partition is configured to be movable in a liquid-tight state so that the opening moves between a detaching position that goes out of each of the independent cleaning tanks and a washing position that goes into each of the independent cleaning tanks. After the substrate is held in the opening by the substrate holding means in the state of being moved to the position, the partition walls are moved to the cleaning position so that both surfaces of the substrate are respectively the cleaning liquid and the non-liquid in each of the independent cleaning tanks. Cleaning solution Cleaning device for the substrate.
【請求項5】 前記洗浄液供給手段が前記基板の面に洗
浄液を噴射する噴射ノズルを有することを特徴とする請
求項1乃至4記載の基板の洗浄装置。
5. The substrate cleaning apparatus according to claim 1, wherein the cleaning liquid supply unit has a spray nozzle for spraying the cleaning liquid onto the surface of the substrate.
【請求項6】 前記非液性洗浄手段が前記基板の面に接
触する回転ブラシであることを特徴とする請求項3また
は4記載の基板の洗浄装置。
6. The substrate cleaning apparatus according to claim 3, wherein the non-liquid cleaning means is a rotating brush that contacts the surface of the substrate.
JP9554093A 1993-03-30 1993-03-30 Cleaning equipment for substrate Withdrawn JPH06291102A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9554093A JPH06291102A (en) 1993-03-30 1993-03-30 Cleaning equipment for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9554093A JPH06291102A (en) 1993-03-30 1993-03-30 Cleaning equipment for substrate

Publications (1)

Publication Number Publication Date
JPH06291102A true JPH06291102A (en) 1994-10-18

Family

ID=14140404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9554093A Withdrawn JPH06291102A (en) 1993-03-30 1993-03-30 Cleaning equipment for substrate

Country Status (1)

Country Link
JP (1) JPH06291102A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000002998A (en) * 1998-06-25 2000-01-15 윤종용 Apparatus of cleaning lcd glass
KR20030057176A (en) * 2001-12-28 2003-07-04 동부전자 주식회사 An Apparatus Cleaning the Backside of Wafers
KR20030057175A (en) * 2001-12-28 2003-07-04 동부전자 주식회사 An Apparatus Cleaning the Backside of Wafers
JP2014214332A (en) * 2013-04-23 2014-11-17 株式会社荏原製作所 Substrate plating apparatus and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000002998A (en) * 1998-06-25 2000-01-15 윤종용 Apparatus of cleaning lcd glass
KR20030057176A (en) * 2001-12-28 2003-07-04 동부전자 주식회사 An Apparatus Cleaning the Backside of Wafers
KR20030057175A (en) * 2001-12-28 2003-07-04 동부전자 주식회사 An Apparatus Cleaning the Backside of Wafers
JP2014214332A (en) * 2013-04-23 2014-11-17 株式会社荏原製作所 Substrate plating apparatus and method

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