JPH02253620A - Washing device for semiconductor substrate - Google Patents
Washing device for semiconductor substrateInfo
- Publication number
- JPH02253620A JPH02253620A JP7378789A JP7378789A JPH02253620A JP H02253620 A JPH02253620 A JP H02253620A JP 7378789 A JP7378789 A JP 7378789A JP 7378789 A JP7378789 A JP 7378789A JP H02253620 A JPH02253620 A JP H02253620A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- rotary
- fluid
- rotation
- dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000005406 washing Methods 0.000 title description 3
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 238000005507 spraying Methods 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 26
- 238000001035 drying Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000428 dust Substances 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体基板の洗浄装置に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor substrate cleaning apparatus.
(従来の技術)
従来、このような分野の技術としては、例えば以下に示
すようなものがあった。(Prior Art) Conventionally, as technologies in this field, there have been the following, for example.
すなわち、この種の装置は、半導体基板を横方向に置き
、一般には半導体基板裏面を真空吸着等により固定して
これを回転し、水或いは薬液、不活性ガス等を半導体基
板表面に吹き付けることにより、表面に付着している異
物、ゴミ等を除去するものであった。In other words, this type of device places a semiconductor substrate horizontally, generally fixes the back side of the semiconductor substrate by vacuum suction, rotates it, and sprays water, chemical solution, inert gas, etc. onto the surface of the semiconductor substrate. , to remove foreign matter, dust, etc. adhering to the surface.
第3図は、かかる従来の第1の半導体基板表面洗浄装置
の構成図である。FIG. 3 is a configuration diagram of such a first conventional semiconductor substrate surface cleaning apparatus.
図において、1は薬液ノズル、2は半導体基板、3はそ
の半導体基板2を固定するための吸着チャック、4は半
導体基板2を回転駆動するためのモータである。In the figure, 1 is a chemical liquid nozzle, 2 is a semiconductor substrate, 3 is a suction chuck for fixing the semiconductor substrate 2, and 4 is a motor for rotationally driving the semiconductor substrate 2.
そこで、吸着チャック3により吸着された半導体基板2
を回転させながら、薬液ノズルlにより薬液を供給し、
半導体基板2の表面の洗浄を行う。Therefore, the semiconductor substrate 2 attracted by the suction chuck 3
While rotating, supply the chemical liquid with the chemical liquid nozzle l,
The surface of the semiconductor substrate 2 is cleaned.
第4図は従来の第2の半導体基板表面洗浄装置の構成図
である。FIG. 4 is a configuration diagram of a second conventional semiconductor substrate surface cleaning apparatus.
この図において、11は薬液ノズル、12は半導体基板
、13はその半導体基板12を固定するための吸着チャ
ック、14は半導体基板12を回転駆動するためのモー
タ、15は半導体基板洗浄ブラシ、16はその洗浄ブラ
シ15の回転駆動モータである。In this figure, 11 is a chemical liquid nozzle, 12 is a semiconductor substrate, 13 is a suction chuck for fixing the semiconductor substrate 12, 14 is a motor for rotationally driving the semiconductor substrate 12, 15 is a semiconductor substrate cleaning brush, and 16 is a This is a rotary drive motor for the cleaning brush 15.
そこで、吸着チャック13により吸着された半導体基板
12を回転させながら、薬液ノズル11から薬液を供給
する。その薬液が供給された半導体基板12表面上に半
導体基板洗浄ブラシ15を回転させて、その表面の洗浄
を行う。Therefore, the chemical liquid is supplied from the chemical liquid nozzle 11 while rotating the semiconductor substrate 12 that is attracted by the suction chuck 13 . The semiconductor substrate cleaning brush 15 is rotated over the surface of the semiconductor substrate 12 to which the chemical solution has been supplied, thereby cleaning the surface.
また、第5図は従来の第3の半導体基板洗浄装置の全体
斜視図、第6図は従来の第3の半導体基板洗浄装置の部
分断面図である。Further, FIG. 5 is an overall perspective view of a third conventional semiconductor substrate cleaning apparatus, and FIG. 6 is a partial sectional view of the third conventional semiconductor substrate cleaning apparatus.
図において、処理装置は、搬送ロボット25、ウェハ2
1を治具24に取り付けるローダ部26、デイツプエツ
チング槽27、水洗槽28.29、最終水洗と乾燥を兼
ねた槽30、ウェハ21を治具24からキャリヤ22に
戻すアンローダ部31より構成されている。まず、垂直
に立てたウェハ21を、搬送ロボット25の矢印り方向
の間欠動作及び矢印E方向の動作によりデイツプエツチ
ング槽27に浸漬する。エツチング終了後、エツチング
槽27よりウェハ21を引き上げ、水洗槽28.29で
充分に水洗し、更に最終水洗槽30で処理した後、ウェ
ハ21を徐々にF方向に引き上げる時に、第6図に示す
ように、ウェハ21の左右両面側のノズル32a、32
bより加温した空気又は窒素ガスを吹きつけて乾燥する
。In the figure, the processing equipment includes a transfer robot 25, a wafer 2
1 to the jig 24, a dip etching tank 27, a rinsing tank 28, 29, a tank 30 for both final rinsing and drying, and an unloader part 31 for returning the wafer 21 from the jig 24 to the carrier 22. ing. First, the vertically erected wafer 21 is immersed in the dip etching tank 27 by the intermittent movement of the transfer robot 25 in the direction of the arrow and the movement of the wafer in the direction of the arrow E. After the etching is completed, the wafer 21 is pulled up from the etching tank 27, thoroughly washed with water in the washing tanks 28 and 29, and further processed in the final washing tank 30. When the wafer 21 is gradually pulled up in the direction F, as shown in FIG. As shown in FIG.
Dry by blowing warmer air or nitrogen gas.
このような先行技術として、例えば特開昭611213
37号が挙げられる。As such prior art, for example, Japanese Patent Application Laid-Open No. 611213
No. 37 is mentioned.
(発明が解決しようとする課B)
しかしながら、上記第3図及び第4図に示す装置におい
ては、半導体基板の片面しか洗浄ができない、また、半
導体基板を横方向に固定するため、細かな異物、ゴミ等
を完全に除去することができない等の問題点があった。(Problem B to be Solved by the Invention) However, in the apparatus shown in FIGS. 3 and 4 above, only one side of the semiconductor substrate can be cleaned, and since the semiconductor substrate is fixed horizontally, fine foreign particles can be removed. There were problems such as the inability to completely remove dust and the like.
また、第5図及び第6図に示す装置においては、半導体
基板に回転を施していないため、該基板に均一な薬液、
ガスの吹き付けができず、即ち完全な洗浄膜コーティン
グ等ができないといった問題があった。In addition, in the apparatus shown in FIGS. 5 and 6, since the semiconductor substrate is not rotated, a uniform chemical solution is applied to the substrate.
There was a problem in that it was not possible to spray gas, that is, it was not possible to completely coat the cleaning film.
本発明は、以上述べた半導体基板の洗浄にあたり、上記
問題点を除去し、半導体基板の表裏面を回転させながら
同時に洗浄し、細かな異物、ゴミ等を有効に除去できる
半導体基板の洗浄装置を堤供することを目的とする。The present invention eliminates the above-mentioned problems when cleaning semiconductor substrates, and provides a semiconductor substrate cleaning device that can simultaneously rotate and clean the front and back surfaces of a semiconductor substrate and effectively remove fine foreign matter, dust, etc. The purpose is to donate money.
(課題を解決するための手段)
本発明は、半導体基板の洗浄装置において、被洗浄半導
体基板を縦に設置し、該半導体基板に左右両方向の高速
回転を与える機構と、半導体基板の回転の反対方向より
加圧された水、薬液或いは不活性ガスを半導体基板の表
裏面に吹き付ける機構を設けるようにしたものである。(Means for Solving the Problems) The present invention provides a semiconductor substrate cleaning apparatus in which a semiconductor substrate to be cleaned is vertically installed, a mechanism for applying high-speed rotation to the semiconductor substrate in both left and right directions, and a mechanism for rotating the semiconductor substrate at high speed in both left and right directions. A mechanism is provided for spraying pressurized water, chemical liquid, or inert gas onto the front and back surfaces of the semiconductor substrate from different directions.
(作用)
本発明によれば、上記のように、半導体基板を縦に装着
し、しかも回転させながら洗浄を行うため、流体により
半導体基板から離れた異物、ゴミ等が有効に下へ落ち、
半導体基板表面に残らない。(Function) According to the present invention, as described above, since the semiconductor substrate is mounted vertically and is cleaned while being rotated, foreign matter, dirt, etc. separated from the semiconductor substrate are effectively dropped down by the fluid.
Does not remain on the surface of the semiconductor substrate.
また、基板の表裏面を同時に洗浄するため、従来では一
般に洗浄が行われなかった裏面も同時に洗浄することが
できる。Furthermore, since the front and back surfaces of the substrate are cleaned at the same time, the back surface, which was generally not cleaned in the past, can also be cleaned at the same time.
(実施例)
以下、本発明の実施例について図面を参照しながら詳細
に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第1図は本発明の実施例を示す半導体基板洗浄装置の正
面図、第2図はその半導体基板洗浄装置の側面図である
。FIG. 1 is a front view of a semiconductor substrate cleaning apparatus showing an embodiment of the present invention, and FIG. 2 is a side view of the semiconductor substrate cleaning apparatus.
図において、41はウェハ回転駆動用モータ、42は駆
動ベルト、43は半導体基板回転駆動用プーリ、44は
加圧水、薬液、不活性ガス噴出口、45は半導体基板支
持ガイドプーリ、46は半導体基板である。In the figure, 41 is a wafer rotation drive motor, 42 is a drive belt, 43 is a semiconductor substrate rotation drive pulley, 44 is a pressurized water, chemical solution, or inert gas outlet, 45 is a semiconductor substrate support guide pulley, and 46 is a semiconductor substrate. be.
この装置の動作について説明すると、半導体基板46を
回転駆動プーリ43と2箇所の支持ガイドプーリ45で
支え、ウェハ回転駆動用モータ41の回転を駆動ベルト
42で回転駆動用ブーIJ43に伝え、半導体基Fi4
6を高速で回転させ、加圧水、薬液、不活性ガス噴出口
44よりそれぞれの流体を噴出し、半導体基板46に吹
き付けることにより、洗浄及び乾燥を行うものである。To explain the operation of this device, a semiconductor substrate 46 is supported by a rotation drive pulley 43 and two support guide pulleys 45, and the rotation of the wafer rotation drive motor 41 is transmitted to the rotation drive boolean IJ43 by a drive belt 42. Fi4
6 is rotated at high speed, and pressurized water, chemical liquid, and inert gas fluids are ejected from the ejection port 44 and sprayed onto the semiconductor substrate 46, thereby cleaning and drying the semiconductor substrate 46.
なお、加圧水、薬液、不活性ガス噴出口44は半導体基
板46の表裏に2箇所づつ計4箇所設置されており、半
導体基板46の回転方向により噴出口よりの加圧水、薬
液、不活性ガスの供給が切り換わる構造を有し、回転方
向により表裏1箇所づつにそれらの流体が噴出される。Note that the pressurized water, chemical liquid, and inert gas jet ports 44 are installed at four locations, two on the front and back sides of the semiconductor substrate 46, and the supply of pressurized water, chemical liquid, and inert gas from the jet ports depends on the direction of rotation of the semiconductor substrate 46. It has a structure in which the fluids are switched, and these fluids are ejected from one location on the front and back depending on the direction of rotation.
なお、加圧水、薬液、不活性ガス噴出口44は、被処理
基板に万遍なく流体(ガス)を吹き付けるように、例え
ば第1図に示すように、複数本備えるようにすることが
望ましい。Note that it is desirable to have a plurality of pressurized water, chemical liquid, and inert gas jet ports 44, as shown in FIG. 1, for example, so as to uniformly spray the fluid (gas) onto the substrate to be processed.
また、加圧水、薬液、不活性ガス噴出口44を被処理基
板の表裏に各2箇所計4箇設置するのは、該基板の回転
方向に合わせて表裏の1箇所、計2箇所から流体(ガス
)を吹き付けるようにするためである。In addition, the reason why pressurized water, chemical liquid, and inert gas jet ports 44 are installed in four locations, two each on the front and back sides of the substrate to be processed, is because fluid (gas) is ) is to be sprayed.
なお、本発明は、エツチング、レジスト等の粘性液体の
回転塗布及びホトリソ工程における現像時などにも十分
に応用することができる。The present invention can also be fully applied to etching, spin coating of viscous liquid such as resist, and development in photolithography steps.
被処理半導体基板は回転操作上、円形又はそれに近い形
状であればよい0通常のウェハの場合、オリフラが設け
てあり、その形状は円形ではないが、このような場合、
回転駆動用プーリ43、支持ガイドプーリ45等にスプ
リング等を備えることにより、基板が歪形状であっても
回転させることができる。The semiconductor substrate to be processed may have a circular shape or a shape close to it for rotational operation. In the case of a normal wafer, an orientation flat is provided and the shape is not circular, but in such a case,
By providing a spring or the like to the rotation drive pulley 43, the support guide pulley 45, etc., the board can be rotated even if it has a distorted shape.
なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
(発明の効果)
以上、詳細に説明したように、本発明によれば、次のよ
うな効果を奏することができる。(Effects of the Invention) As described above in detail, according to the present invention, the following effects can be achieved.
(1)半導体基板を縦に装着し、しかも回転させながら
洗浄を行うため、流体或いはガスにより半導体基板から
離れた異物、ゴミ等が有効に下へ落ち、半導体基板表面
に残らない。(1) Since the semiconductor substrate is mounted vertically and is cleaned while being rotated, foreign matter, dirt, etc. separated from the semiconductor substrate by fluid or gas are effectively dropped down and do not remain on the surface of the semiconductor substrate.
(2)半導体基板の表裏面を同時に洗浄するため、従来
では一般に洗浄が行われなかった裏面も同時に洗浄する
ことができる。(2) Since the front and back surfaces of the semiconductor substrate are cleaned at the same time, the back surface, which was generally not cleaned in the past, can also be cleaned at the same time.
(3)更に、表裏を同時に洗浄できる特徴を使うと、半
導体集積回路製造用マスクの洗浄にも応用が可能である
。(3) Furthermore, by using the feature that the front and back sides can be cleaned simultaneously, it can be applied to cleaning masks for manufacturing semiconductor integrated circuits.
第1図は本発明の実施例を示す半導体基板洗浄装置の正
面図、第2図はその半導体基板洗浄装置の側面図、第3
図は従来の第1の半導体基板表面洗浄装置の構成図、第
4図は従来の第2の半導体基板表面洗浄装置の構成図、
第5図は従来の第3の半導体基板洗浄装置の全体斜視図
、第6図は従来の第3の半導体基板洗浄装置の部分断面
図である。
41・・・ウェハ回転駆動用モータ、42・・・駆動ベ
ルト、43・・・半導体基板回転駆動用プーリ、44・
・・加圧水、薬液、不活性ガス噴出口、45・・・半導
体基板支持ガイドプーリ、46・・・半導体基板。
本是Q9半導Jし基右しえ4碧しf、正illり第1図
特許出願人 沖電気工業株式会社
代理人 弁理士 清 水 守(外1名)q潤社劇本
基板舟す装ト傭励圀
第2図
第3図
第
図
第5図
第
6図FIG. 1 is a front view of a semiconductor substrate cleaning apparatus showing an embodiment of the present invention, FIG. 2 is a side view of the semiconductor substrate cleaning apparatus, and FIG.
FIG. 4 is a configuration diagram of a first conventional semiconductor substrate surface cleaning device, FIG. 4 is a configuration diagram of a second conventional semiconductor substrate surface cleaning device,
FIG. 5 is an overall perspective view of a third conventional semiconductor substrate cleaning apparatus, and FIG. 6 is a partial sectional view of the third conventional semiconductor substrate cleaning apparatus. 41... Wafer rotation drive motor, 42... Drive belt, 43... Semiconductor substrate rotation drive pulley, 44...
... Pressurized water, chemical solution, inert gas jet port, 45... Semiconductor substrate support guide pulley, 46... Semiconductor substrate. This is Q9 Semiconductor J and base 4 Ao Shi f, correct illumination Figure 1 Patent applicant Oki Electric Industry Co., Ltd. agent Patent attorney Mamoru Shimizu (1 other person) q Junsha drama book board design Figure 2 Figure 3 Figure 5 Figure 6
Claims (2)
、 (c)該半導体基板の表裏面に回転に合わせて流体又は
ガスを吹き付ける手段とを備えた半導体基板の洗浄装置
。(1) (a) means for vertically holding the semiconductor substrate; (b) means for rotationally driving the semiconductor substrate in both left and right directions; and (c) means for applying fluid or gas to the front and back surfaces of the semiconductor substrate in accordance with the rotation. A semiconductor substrate cleaning device comprising a spraying means.
構造を有することを特徴とする請求項1記載の半導体基
板の洗浄装置。(2) The semiconductor substrate cleaning apparatus according to claim 1, further comprising a structure for simultaneously cleaning and drying the front and back surfaces of the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7378789A JPH02253620A (en) | 1989-03-28 | 1989-03-28 | Washing device for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7378789A JPH02253620A (en) | 1989-03-28 | 1989-03-28 | Washing device for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02253620A true JPH02253620A (en) | 1990-10-12 |
Family
ID=13528251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7378789A Pending JPH02253620A (en) | 1989-03-28 | 1989-03-28 | Washing device for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02253620A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5379785A (en) * | 1991-10-09 | 1995-01-10 | Mitsubishi Denki Kabushiki Kaisha | Cleaning apparatus |
US5558110A (en) * | 1993-07-23 | 1996-09-24 | Williford, Jr.; John F. | Apparatus for removing particulate matter |
US5806138A (en) * | 1995-02-15 | 1998-09-15 | Oki Electric Industry Co., Ltd. | Cleaning apparatus for cleaning a semiconductor wafer |
US5816274A (en) * | 1997-04-10 | 1998-10-06 | Memc Electronic Materials, Inc. | Apparartus for cleaning semiconductor wafers |
US5916366A (en) * | 1996-10-08 | 1999-06-29 | Dainippon Screen Mfg. Co., Ltd. | Substrate spin treating apparatus |
US6516816B1 (en) * | 1999-04-08 | 2003-02-11 | Applied Materials, Inc. | Spin-rinse-dryer |
US6516815B1 (en) * | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6615854B1 (en) * | 1999-05-19 | 2003-09-09 | Ebara Corporation | Wafer cleaning apparatus |
US6748961B2 (en) * | 2001-03-30 | 2004-06-15 | Lam Research Corporation | Angular spin, rinse, and dry module and methods for making and implementing the same |
US6770565B2 (en) | 2002-01-08 | 2004-08-03 | Applied Materials Inc. | System for planarizing metal conductive layers |
US6824612B2 (en) | 2001-12-26 | 2004-11-30 | Applied Materials, Inc. | Electroless plating system |
-
1989
- 1989-03-28 JP JP7378789A patent/JPH02253620A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5379785A (en) * | 1991-10-09 | 1995-01-10 | Mitsubishi Denki Kabushiki Kaisha | Cleaning apparatus |
US5558110A (en) * | 1993-07-23 | 1996-09-24 | Williford, Jr.; John F. | Apparatus for removing particulate matter |
US5806138A (en) * | 1995-02-15 | 1998-09-15 | Oki Electric Industry Co., Ltd. | Cleaning apparatus for cleaning a semiconductor wafer |
US6059893A (en) * | 1995-02-15 | 2000-05-09 | Oki Electric Industry Co., Ltd. | Method for cleaning a semiconductor wafer |
US5916366A (en) * | 1996-10-08 | 1999-06-29 | Dainippon Screen Mfg. Co., Ltd. | Substrate spin treating apparatus |
US5816274A (en) * | 1997-04-10 | 1998-10-06 | Memc Electronic Materials, Inc. | Apparartus for cleaning semiconductor wafers |
US6516816B1 (en) * | 1999-04-08 | 2003-02-11 | Applied Materials, Inc. | Spin-rinse-dryer |
US7226514B2 (en) | 1999-04-08 | 2007-06-05 | Applied Materials, Inc. | Spin-rinse-dryer |
US6615854B1 (en) * | 1999-05-19 | 2003-09-09 | Ebara Corporation | Wafer cleaning apparatus |
US7037853B2 (en) | 1999-05-19 | 2006-05-02 | Ebara Corporation | Wafer cleaning apparatus |
US6516815B1 (en) * | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6748961B2 (en) * | 2001-03-30 | 2004-06-15 | Lam Research Corporation | Angular spin, rinse, and dry module and methods for making and implementing the same |
US6824612B2 (en) | 2001-12-26 | 2004-11-30 | Applied Materials, Inc. | Electroless plating system |
US6770565B2 (en) | 2002-01-08 | 2004-08-03 | Applied Materials Inc. | System for planarizing metal conductive layers |
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