JP2003100687A - Substrate treating device and its cleaning method - Google Patents

Substrate treating device and its cleaning method

Info

Publication number
JP2003100687A
JP2003100687A JP2001289522A JP2001289522A JP2003100687A JP 2003100687 A JP2003100687 A JP 2003100687A JP 2001289522 A JP2001289522 A JP 2001289522A JP 2001289522 A JP2001289522 A JP 2001289522A JP 2003100687 A JP2003100687 A JP 2003100687A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
liquid
processing
hydrophilic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001289522A
Other languages
Japanese (ja)
Inventor
Akira Fukunaga
明 福永
Katsutaka Inoue
雄貴 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2001289522A priority Critical patent/JP2003100687A/en
Publication of JP2003100687A publication Critical patent/JP2003100687A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To make the hydrophilic properties of constituent members using hydrophilic members (hydrophilic members) of a substrate treating device maintainable without removing the members from the device nor stopping the device. SOLUTION: The substrate treating device has a substrate holding section 12 which rotates a substrate W while holding the substrate W and treats the substrate W held by means of the section 12 by supplying a treating liquid. The device uses hydrophilic members 40a-40d on at least the surfaces of the constituent members 16, 18, 22, and 24 to which the treating liquid adheres at the time of treating the substrate W by supplying the treating liquid. At the same time, the device is provided with a cleaning solution supply section 42 which supplies the treating liquid to the surfaces of the members 40a-40d.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、基板処理装置及び
その洗浄方法に関し、特に半導体ウエハ、ガラス基板、
液晶パネル等の基板に所定の処理液を供給して基板を処
理し、しかる後、スピン乾燥させるスピン乾燥工程を含
む、例えば洗浄装置、エッチング装置、レジスト塗布装
置等の基板処理装置及びその洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a cleaning method therefor, and more particularly to a semiconductor wafer, a glass substrate,
A substrate processing apparatus such as a cleaning apparatus, an etching apparatus, a resist coating apparatus, and a cleaning method including a spin drying step of supplying a predetermined processing liquid to a substrate such as a liquid crystal panel to process the substrate, and then spin drying. Regarding

【0002】[0002]

【従来の技術】例えば、半導体デバイスの製造工程にお
いては、半導体ウエハ等の基板の表面に銅めっき処理や
CMP(化学的機械的研磨)処理を施した後、不純物や
汚染物等を除去する洗浄処理を施すことが広く行われて
いる。
2. Description of the Related Art For example, in a semiconductor device manufacturing process, a surface of a substrate such as a semiconductor wafer is subjected to a copper plating treatment or a CMP (chemical mechanical polishing) treatment, and then a cleaning for removing impurities and contaminants. The treatment is widely performed.

【0003】この基板の洗浄処理を行う基板洗浄装置
(基板処理装置)としては、基板を水平に保持して回転
させる基板保持部と、この基板保持部で保持した基板の
表面及び裏面に薬液や純水等の処理液を供給する処理液
供給部(処理液供給ノズル)とを備え、基板を回転させ
つつ該基板に処理液を供給し、しかる後、基板にリンス
用の純水を供給して基板を洗浄するようにしたものが一
般に知られている。この種の基板洗浄装置にあっては、
洗浄処理終了後、基板を高速で回転させてスピン乾燥さ
せることも広く行われている。
As a substrate cleaning device (substrate processing device) for cleaning the substrate, a substrate holding part for holding the substrate horizontally and rotating it, and a chemical solution for the front and back surfaces of the substrate held by the substrate holding part A processing liquid supply unit (processing liquid supply nozzle) for supplying a processing liquid such as pure water is provided, and the processing liquid is supplied to the substrate while rotating the substrate, and then pure water for rinsing is supplied to the substrate. It is generally known that the substrate is cleaned by cleaning. In this type of substrate cleaning device,
It is also widely practiced to spin the substrate by spinning it at a high speed after the cleaning process.

【0004】このように、基板の処理液による処理とス
ピン乾燥とを同一モジュールで連続的に行うようにした
基板処理装置にあっては、装置構成部材の表面に薬液等
の処理液が残留することがある。そして、このように、
装置構成部材の表面に処理液が残留すると、この液滴が
基板に再付着したり、乾燥してパーティクルの原因とな
ったりする。
As described above, in the substrate processing apparatus in which the processing of the substrate with the processing solution and the spin-drying are continuously performed in the same module, the processing solution such as the chemical solution remains on the surface of the components of the apparatus. Sometimes. And like this,
When the treatment liquid remains on the surface of the component member of the apparatus, the droplet may reattach to the substrate or may be dried and cause particles.

【0005】このため、洗浄等の処理の際に処理液が付
着する装置構成部材に液体が残留しにくい親水性部材を
使用することで、処理液の残留物を装置構成部材の表面
に止まらせないようすることが行われている。
For this reason, by using a hydrophilic member in which the liquid does not easily remain in the apparatus constituent member to which the processing liquid adheres during the processing such as cleaning, the residue of the processing liquid is stopped on the surface of the apparatus constituent member. Something is being done to prevent it.

【0006】[0006]

【発明が解決しようとする課題】しかし、装置構成部材
に液体が残留しにくい親水性部材を使用しても、基板を
処理していくにつれて、基板からの汚れた処理液や、雰
囲気中の有機物などが親水性部材の表面に付着し、これ
によって、親水性部材の表面が次第に疎水表面へと変わ
ることがある。そして、このように、親水性部材の表面
が疎水表面に変わると、この表面に液体が残留しやすく
なり、これを防止するためには、親水性部材を使用した
装置構成部材を装置から取外して交換したり、洗浄した
りすることが必要となるといった問題があった。
However, even if a hydrophilic member in which a liquid is less likely to remain is used as a component member of the apparatus, as the substrate is processed, the processing liquid contaminated from the substrate and organic substances in the atmosphere become dirty. May adhere to the surface of the hydrophilic member, which may gradually change the surface of the hydrophilic member to a hydrophobic surface. Then, when the surface of the hydrophilic member is changed to a hydrophobic surface in this way, the liquid is likely to remain on this surface, and in order to prevent this, the device constituent member using the hydrophilic member is removed from the device. There was a problem that it was necessary to replace or wash.

【0007】本発明は上記に鑑みてなされたもので、親
水性部材を使用した装置構成部材を装置から取外した
り、また装置を停止したりすることなく、装置構成部材
(親水性部材)の有する親水性を維持できるようにした
基板処理装置を提供することを目的とする。
The present invention has been made in view of the above, and has a device component (hydrophilic member) without removing the device component using a hydrophilic member from the device or stopping the device. An object is to provide a substrate processing apparatus capable of maintaining hydrophilicity.

【0008】[0008]

【課題を解決するための手段】請求項1に記載の発明
は、基板を保持し回転させる基板保持部を有し、この基
板保持部で保持した基板に処理液を供給して基板を処理
する基板処理装置において、処理液を供給して基板を処
理する時に処理液が付着する装置構成部材の少なくとも
表面に親水性部材を使用するとともに、前記親水性部材
の表面に薬液を含む洗浄液を供給する洗浄液供給部を備
えたことを特徴とする基板処理装置である。
According to a first aspect of the present invention, there is provided a substrate holding unit for holding and rotating a substrate, and a processing liquid is supplied to the substrate held by the substrate holding unit to process the substrate. In a substrate processing apparatus, a hydrophilic member is used on at least the surface of an apparatus component member to which the processing liquid adheres when the processing liquid is supplied to process the substrate, and a cleaning liquid containing a chemical liquid is supplied to the surface of the hydrophilic member. The substrate processing apparatus is provided with a cleaning liquid supply unit.

【0009】これにより、親水性部材を使用した装置構
成部材の表面に処理液が残留して、この液滴などが基板
へ付着することを抑制し、しかも、親水性部材の表面に
薬液を含む洗浄液を供給して該表面を洗浄することで、
親水性部材の表面が、基板からの汚れた処理液や、空気
中の有機物などにより汚染され、疎水表面となることを
防止することができる。
As a result, it is possible to prevent the treatment liquid from remaining on the surface of the apparatus constituting member using the hydrophilic member, and to prevent the droplets and the like from adhering to the substrate, and moreover, the surface of the hydrophilic member contains the chemical liquid. By supplying a cleaning liquid to clean the surface,
It is possible to prevent the surface of the hydrophilic member from becoming contaminated with the dirty processing liquid from the substrate, organic matter in the air, and the like to become a hydrophobic surface.

【0010】請求項2に記載の発明は、前記装置構成部
材は、基板を保持して回転させる基板保持部、該基板保
持部で保持した基板に処理液を供給する処理液供給部及
び前記基板保持部の周囲を包囲して処理液の飛散を防止
する飛散防止カップを含むことを特徴とする請求項1記
載の基板処理装置である。
According to a second aspect of the present invention, the apparatus constituting member includes a substrate holding part for holding and rotating a substrate, a processing liquid supply part for supplying a processing liquid to the substrate held by the substrate holding part, and the substrate. 2. The substrate processing apparatus according to claim 1, further comprising a scattering prevention cup that surrounds the periphery of the holding portion to prevent the processing liquid from scattering.

【0011】請求項3に記載の発明は、前記洗浄液は、
アルカリまたは酸化剤の少なくとも一方を含む液である
ことを特徴とする請求項1または2記載の基板処理装置
である。アルカリあるいは酸化剤を含む洗浄液を親水性
部材の表面に堆積する有機物等の付着物に振り掛ける
と、付着物は親水性部材の表面から剥離し、これによっ
て、付着物を親水性部材の表面から容易に除去すること
ができる。
According to a third aspect of the present invention, the cleaning liquid comprises:
The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a liquid containing at least one of an alkali and an oxidizing agent. When a cleaning liquid containing an alkali or an oxidant is sprinkled on the deposit such as an organic substance deposited on the surface of the hydrophilic member, the deposit is separated from the surface of the hydrophilic member, whereby the deposit is separated from the surface of the hydrophilic member. It can be easily removed.

【0012】請求項4に記載の発明は、基板保持部で保
持した基板に処理液を供給して基板を処理する際に処理
液が付着する装置構成部材の少なくとも表面に親水性部
材を使用し、前記親水性部材の表面を、薬液を含む洗浄
液で洗浄することを特徴とする基板処理装置の洗浄方法
である。請求項5に記載の発明は、前記洗浄液は、アル
カリまたは酸化剤の少なくとも一方を含む液であること
を特徴とする請求項4記載の基板処理装置の洗浄方法で
ある。
According to a fourth aspect of the present invention, a hydrophilic member is used on at least the surface of an apparatus constituting member to which the processing liquid adheres when the processing liquid is supplied to the substrate held by the substrate holding unit to process the substrate. The method for cleaning a substrate processing apparatus is characterized in that the surface of the hydrophilic member is cleaned with a cleaning solution containing a chemical solution. The invention according to claim 5 is the method for cleaning a substrate processing apparatus according to claim 4, wherein the cleaning liquid is a liquid containing at least one of an alkali and an oxidizing agent.

【0013】請求項6に記載の発明は、処理液を供給し
て基板を処理する時に処理液が付着する装置構成部材の
少なくとも表面に親水性部材を使用するとともに、前記
親水性部材の表面に薬液を含む洗浄液を供給する洗浄液
供給部を備えた洗浄装置と、基板の表面にめっきを施す
めっき処理槽とを有することを特徴とするめっき装置で
ある。
According to a sixth aspect of the present invention, a hydrophilic member is used on at least the surface of an apparatus constituting member to which the processing liquid adheres when the processing liquid is supplied to process the substrate, and the hydrophilic member is formed on the surface of the hydrophilic member. A plating apparatus comprising: a cleaning device having a cleaning liquid supply unit for supplying a cleaning liquid containing a chemical liquid; and a plating treatment tank for plating the surface of a substrate.

【0014】請求項7に記載の発明は、処理液を供給し
て基板を処理する時に処理液が付着する装置構成部材の
少なくとも表面に親水性部材を使用するとともに、前記
親水性部材の表面に薬液を含む洗浄液を供給する洗浄液
供給部を備えた洗浄装置と、基板の表面を研磨する研磨
テーブル及びトップリングを有する研磨部と、基板を搬
送する搬送ロボットとを有することを特徴とするCMP
装置である。
According to a seventh aspect of the present invention, a hydrophilic member is used on at least the surface of an apparatus constituting member to which the processing liquid adheres when the processing liquid is supplied to process the substrate, and the hydrophilic member is formed on the surface of the hydrophilic member. A CMP comprising: a cleaning device having a cleaning liquid supply unit for supplying a cleaning liquid containing a chemical liquid, a polishing unit having a polishing table and a top ring for polishing the surface of the substrate, and a transfer robot for transferring the substrate.
It is a device.

【0015】[0015]

【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図1は、基板を一枚ずつ洗浄しス
ピン乾燥させる枚葉型の基板洗浄装置に適用した、本発
明の実施の形態の基板処理装置を示す。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a substrate processing apparatus according to an embodiment of the present invention, which is applied to a single-wafer type substrate cleaning apparatus in which substrates are cleaned one by one and spin-dried.

【0016】この基板洗浄装置(基板処理装置)は、洗
浄カバー10の内部に配置され、基板Wを着脱自在に保
持する基板保持部12を有している。この基板保持部1
2は、基板回転機構14の上端に連結されて回転する円
板状の支持板16と、この支持板16の外周部に所定の
間隔を置いて立設した複数のスピンチャック18とを有
し、このスピンチャック18で基板Wの周縁部を着脱自
在に把持するようになっている。
This substrate cleaning apparatus (substrate processing apparatus) has a substrate holding section 12 which is disposed inside the cleaning cover 10 and holds the substrate W detachably. This substrate holder 1
The reference numeral 2 includes a disc-shaped support plate 16 which is connected to the upper end of the substrate rotating mechanism 14 and rotates, and a plurality of spin chucks 18 which are provided upright on the outer peripheral portion of the support plate 16 with a predetermined interval. The spin chuck 18 detachably holds the peripheral edge of the substrate W.

【0017】この基板保持部12の側部上方に位置し
て、基板保持部12で保持した基板Wの表面に薬液や純
水等の処理液を供給する表面ノズル(処理液供給部)2
0が、支持板16の中央部上面に位置して基板保持部1
2で保持した基板Wの裏面に薬液や純水等の処理液を供
給する裏面ノズル(処理液供給部)22がそれぞれ配置
されている。ここで、基板Wの洗浄には、種々の処理液
が使用されて基板の表裏面に供給されるが、この処理液
としては、例えばアンモニア過水、塩酸過水、希ふっ酸
等が挙げられる。
A surface nozzle (processing liquid supply unit) 2 located above the side of the substrate holding unit 12 and supplying a processing liquid such as a chemical liquid or pure water to the surface of the substrate W held by the substrate holding unit 12.
0 is located on the upper surface of the central portion of the support plate 16 and
Back surface nozzles (processing liquid supply unit) 22 for supplying a processing liquid such as a chemical liquid or pure water are arranged on the back surface of the substrate W held by 2. Here, for cleaning the substrate W, various treatment liquids are used and supplied to the front and back surfaces of the substrate. Examples of the treatment liquid include ammonia hydrogen peroxide, hydrochloric acid hydrogen peroxide, dilute hydrofluoric acid, and the like. .

【0018】また、図示しないが、例えばエッチング装
置に適用した場合にあっては、種々のエッチング液が処
理液として使用されて基板の表面に供給されるが、例え
ば銅のエッチング液(処理液)としては、希ふっ酸や過
酸化水素水等が挙げられ、裏面の清浄化に使用される処
理液としては、例えば、前記洗浄に使用される処理液や
過酸化水素水等が挙げられる。更に、レジスト塗布装置
に適用した場合にあっては、種々のレジスト液が処理液
として使用されて基板の表面に供給される。
Although not shown, when applied to an etching apparatus, for example, various etching solutions are used as a processing solution and supplied to the surface of the substrate. For example, an etching solution of copper (processing solution) is used. Examples thereof include dilute hydrofluoric acid and hydrogen peroxide water, and examples of the processing liquid used for cleaning the back surface include the processing liquid used for the cleaning and hydrogen peroxide water. Furthermore, when applied to a resist coating apparatus, various resist solutions are used as processing solutions and supplied to the surface of the substrate.

【0019】また、略円筒状の飛散防止カップ24が上
下動自在に配置され、この飛散防止カップ24は、上昇
した時に基板保持部12の周囲を包囲して、基板保持部
12で保持した基板Wを処理液で洗浄する際に、この処
理液の飛散を防止し、下降した時に基板保持部12を開
放するように構成されている。
Further, a substantially cylindrical shatterproof cup 24 is arranged so as to be movable up and down, and this shatterproof cup 24 surrounds the periphery of the substrate holding part 12 when raised and holds the substrate held by the substrate holding part 12. When the W is washed with the processing liquid, the processing liquid is prevented from scattering and the substrate holding portion 12 is opened when the W is lowered.

【0020】洗浄カバー10の下部には、排水ポート2
6が設けられ、この排水ポート26は、洗浄カバー10
の外側に配置した気水分離器28に連通している。そし
て、この気水分離器28で分離された気体は排気管30
から、液体はドレン管32からそれぞれ排出されるよう
になっている。
At the bottom of the cleaning cover 10, the drain port 2
6 is provided, and this drain port 26 is provided with a cleaning cover 10
It communicates with the steam separator 28 which is arranged outside. The gas separated by the steam separator 28 is exhausted by the exhaust pipe 30.
Therefore, the liquid is discharged from the drain pipe 32.

【0021】ここで、基板保持部12で基板Wを保持
し、処理液を供給して洗浄する際に処理液が付着する装
置構成部材の表面に親水性部材が使用されている。すな
わち、この例にあっては、基板保持部12の支持板16
の上面に親水性部材40aが、スピンチャック18の全
外周面に親水性部材40bが、裏面ノズル22の全外周
面に親水性部材40cが、飛散防止カップ24の内周面
に親水性部材40dがそれぞれ使用されている。
Here, a hydrophilic member is used on the surface of the apparatus constituting member to which the substrate W is held by the substrate holder 12 and to which the treatment liquid adheres when the treatment liquid is supplied and washed. That is, in this example, the support plate 16 of the substrate holding unit 12 is
Of the spin chuck 18, the hydrophilic member 40b on the entire outer peripheral surface of the spin chuck 18, the hydrophilic member 40c on the entire outer peripheral surface of the back nozzle 22, and the hydrophilic member 40d on the inner peripheral surface of the shatterproof cup 24. Are used respectively.

【0022】このように、処理液が付着する装置構成部
材16,18,22,24の表面に液体が残留しにくい
親水性部材40a〜40dを使用することで、処理液の
残留物を装置構成部材16,18,22,24の表面に
止まらせないようにして、ここに処理液が残留して、こ
の液滴などが基板へ付着することを抑制することができ
る。
As described above, by using the hydrophilic members 40a to 40d in which the liquid does not easily remain on the surfaces of the device constituting members 16, 18, 22, 24 to which the treating liquid adheres, the residue of the treating liquid is constituted. By preventing the processing liquid from remaining on the surfaces of the members 16, 18, 22, and 24, it is possible to prevent the droplets and the like from adhering to the substrate.

【0023】そして、基板保持部12の直上方に位置し
て、処理液が付着する装置構成部材16,18,22,
24の表面に使用した親水性部材40a〜40dの表面
に薬液を含む洗浄液を供給して親水性部材40a〜40
dを洗浄する洗浄ノズル(洗浄液供給部)42が配置さ
れている。これによって、例えば1枚の基板の洗浄処理
が終了した後、任意に設定した枚数の基板の洗浄処理が
終了した後、或いは任意に設定した時間が経過した後等
に、洗浄ノズル42から先ず親水性部材40a〜40d
の表面に向けて洗浄液を供給して薬液による洗浄を行
い、しかる後、洗浄ノズル42から親水性部材40a〜
40dの表面に向けてリンス用の純水を供給して親水性
部材40a〜40dの表面をリンスするのであり、この
ように、親水性部材40a〜40dの表面を洗浄液で洗
浄することによって、親水性部材40a〜40dの表面
が、基板Wからの汚れた処理液や、空気中の有機物など
により汚染され、疎水表面となることを防止することが
できる。
Then, located directly above the substrate holding portion 12, the apparatus constituting members 16, 18, 22, to which the processing liquid adheres,
The cleaning liquid containing the chemical liquid is supplied to the surfaces of the hydrophilic members 40a to 40d used for the surfaces of the hydrophilic members 40a to 40d.
A cleaning nozzle (cleaning liquid supply unit) 42 for cleaning d is arranged. As a result, for example, after the cleaning process for one substrate is completed, the cleaning process for an arbitrarily set number of substrates is completed, or after an arbitrarily set time has elapsed, the cleaning nozzle 42 is first made hydrophilic. Member 40a-40d
The cleaning liquid is supplied toward the surface of the member to clean it with the chemical liquid, and thereafter, the hydrophilic member 40a to the hydrophilic member 40a through the cleaning nozzle 42.
Pure water for rinsing is supplied toward the surface of 40d to rinse the surfaces of the hydrophilic members 40a to 40d. Thus, by cleaning the surfaces of the hydrophilic members 40a to 40d with the cleaning liquid, It is possible to prevent the surfaces of the elastic members 40a to 40d from becoming contaminated by the dirty processing liquid from the substrate W or organic substances in the air and becoming a hydrophobic surface.

【0024】このように、アルカリまたは酸化剤の少な
くとも一方を含む洗浄液を親水性部材40a〜40dの
表面に堆積する有機物等の付着物(処理液)に振り掛け
ると、付着物は親水性部材40a〜40dの表面から剥
離し、これによって、付着物を親水性部材40a〜40
dの表面から容易に除去することができる。
As described above, when the cleaning liquid containing at least one of the alkali and the oxidizing agent is sprinkled on the deposit (treatment liquid) such as organic substances deposited on the surfaces of the hydrophilic members 40a to 40d, the deposit is hydrophilic. ~ 40d from the surface of the hydrophilic member 40a ~ 40d.
It can be easily removed from the surface of d.

【0025】この洗浄液としては、例えばアルカリまた
は酸化剤の少なくとも一方を含む液が使用され、このア
ルカリとしては、アンモニアやテトラメチルアンモニウ
ムヒドロキシドなどの有機アルカリなどが、酸化剤とし
ては、過酸化水素水などが挙げられる。
As the cleaning liquid, for example, a liquid containing at least one of an alkali and an oxidizing agent is used. As the alkaline, an organic alkali such as ammonia or tetramethylammonium hydroxide is used, and as the oxidizing agent, hydrogen peroxide is used. Examples include water.

【0026】なお、この例では、表面ノズル20は、処
理液が付着しない位置に配置されているため、この表面
に親水性部材を使用していないが、表面ノズル20が処
理液が付着する位置に配置されている場合には、この処
理液が付着する表面に親水性材料を使用してもよい。ま
た、処理液が付着する装置構成部材16,18,22,
24の表面にのみ親水性部材40a〜40dを使用して
いるが、このような装置構成部材を親水性部材で構成し
てもよい。
In this example, since the front surface nozzle 20 is arranged at a position where the treatment liquid does not adhere, a hydrophilic member is not used on this surface, but the front surface nozzle 20 does not adhere to the treatment liquid. In the case where the treatment liquid is placed on the surface, a hydrophilic material may be used on the surface to which the treatment liquid is attached. Further, the device constituent members 16, 18, 22, to which the processing liquid adheres,
Although the hydrophilic members 40a to 40d are used only on the surface of 24, such a device-constituting member may be formed of a hydrophilic member.

【0027】次に、この実施の形態の基板洗浄装置(基
板処理装置)による基板の洗浄処理、及びこの基板洗浄
装置の洗浄処理について説明する。先ず、飛散防止カッ
プ24を下降させた状態で、洗浄カバー10に設けた基
板出入れ孔(図示せず)から、この洗浄カバー10の内
部に基板Wをロボットハンド等で挿入して、基板保持部
12のスピンチャック18で保持する。しかる後、飛散
防止カップ24を上昇させる。この状態で、基板を、例
えば1〜2000rpmで回転させ、この回転中に基板
Wの表裏面に表面ノズル20及び裏面ノズル22から処
理液を供給して、基板Wの処理液による処理(洗浄)を
行い、しかる後、基板Wの表裏面に表面ノズル20及び
裏面ノズル22からリンス液としての純水を供給してリ
ンスする。
Next, the substrate cleaning processing by the substrate cleaning apparatus (substrate processing apparatus) of this embodiment and the cleaning processing by this substrate cleaning apparatus will be described. First, with the shatterproof cup 24 lowered, a substrate W is inserted into the cleaning cover 10 through a substrate loading / unloading hole (not shown) provided in the cleaning cover 10 with a robot hand or the like to hold the substrate. It is held by the spin chuck 18 of the unit 12. After that, the scattering prevention cup 24 is raised. In this state, the substrate is rotated at, for example, 1 to 2000 rpm, and during this rotation, the processing liquid is supplied to the front and back surfaces of the substrate W from the front surface nozzle 20 and the back surface nozzle 22 to process (clean) the substrate W with the processing liquid. After that, pure water as a rinse liquid is supplied to the front and back surfaces of the substrate W from the front surface nozzle 20 and the back surface nozzle 22 for rinsing.

【0028】次に、表面ノズル20及び裏面ノズル22
からの純水の供給を停止し、しかる後、基板Wを、例え
ば1500rpm〜3000rpmの高速で回転させて
スピン乾燥させる。そして、基板Wの回転を停止させ、
飛散防止カップ24を下降させた後、ロボットハンド等
により、スピン乾燥後の基板を基板保持部12のスピン
チャック18から受取り、洗浄カバー10の内部から取
出して次工程に搬送する。
Next, the front surface nozzle 20 and the rear surface nozzle 22
The supply of pure water from the above is stopped, and thereafter, the substrate W is rotated at a high speed of, for example, 1500 rpm to 3000 rpm to be spin-dried. Then, the rotation of the substrate W is stopped,
After lowering the scattering prevention cup 24, the spin-dried substrate is received from the spin chuck 18 of the substrate holder 12 by a robot hand or the like, taken out from the inside of the cleaning cover 10 and conveyed to the next step.

【0029】ここで、例えば基板洗浄装置によって基板
を処理するごと、任意に設定した枚数の基板を処理する
ごと、或いは任意に設定した時間ごとに基板洗浄装置の
洗浄を行う。
Here, for example, every time a substrate is cleaned by the substrate cleaning device, an arbitrarily set number of substrates are processed, or the substrate cleaning device is cleaned at an arbitrarily set time.

【0030】つまり、飛散防止カップ24を上昇させた
状態で、基板保持部12を、例えば1〜2000rpm
で回転させ、この回転中に処理液が付着する装置構成部
材16,18,22,24の表面に使用した親水性部材
40a〜40dの表面に洗浄ノズル42から洗浄液を供
給して親水性部材40a〜40dの表面の洗浄液による
洗浄処理を、例えば数秒間〜30秒間行う。しかる後、
親水性部材40a〜40dの表面に洗浄ノズル42から
リンス液としての純水を供給して、純水によるリンス処
理を、例えば数秒間〜60秒間行う。そして、洗浄ノズ
ル42からの純水の供給を停止し、しかる後、基板保持
部12を、例えば1500rpm〜3000rpmの高
速で回転させてスピン乾燥させる。
That is, with the anti-scatter cup 24 raised, the substrate holder 12 is moved to, for example, 1 to 2000 rpm.
The cleaning liquid is supplied from the cleaning nozzle 42 to the surfaces of the hydrophilic members 40a to 40d used on the surfaces of the apparatus constituent members 16, 18, 22, 24 to which the processing liquid adheres during the rotation. The cleaning treatment of the surface with a cleaning liquid of -40d is performed for several seconds to 30 seconds, for example. After that,
Pure water as a rinse liquid is supplied from the cleaning nozzle 42 to the surfaces of the hydrophilic members 40a to 40d, and a rinse treatment with pure water is performed for, for example, several seconds to 60 seconds. Then, the supply of pure water from the cleaning nozzle 42 is stopped, and then the substrate holding unit 12 is rotated at a high speed of, for example, 1500 rpm to 3000 rpm to spin-dry.

【0031】なお、上記例にあっては、本発明を基板洗
浄装置に適用した例を示しているが、例えば、エッチン
グ装置、レジスト塗布装置及びレジスト剥離装置等、ス
ピン工程を含む基板処理装置全般に適用できることは勿
論である。また、例えば処理液として酸化剤やアルカリ
を含む液を使う場合には、処理液をそのまま洗浄液とす
ることができる場合もあり、そのような場合は基板の処
理と同時に洗浄が行われることになる。
In the above example, the present invention is applied to a substrate cleaning apparatus, but for example, a substrate processing apparatus including a spin process such as an etching apparatus, a resist coating apparatus and a resist stripping apparatus in general. Of course, it can be applied to. Further, for example, when a liquid containing an oxidizer or an alkali is used as the processing liquid, the processing liquid may be used as it is as a cleaning liquid. In such a case, cleaning is performed simultaneously with the processing of the substrate. .

【0032】図2は、図1に示す基板処理装置(基板洗
浄装置)を内部に組み込んだめっき装置の概要を示す図
である。このめっき装置は、被処理材である半導体ウエ
ハ等の基板(図示せず)を収納した基板カセット(図示
せず)を受け入れまたは出庫するためのロード・アンロ
ードユニット50,52と、基板を1枚ずつ搬送するた
めの2台の搬送ロボット54,56と、基板表面に処理
液によるコーティング等の前処理を施すための前処理槽
58と、めっき処理を行うめっき処理槽60と、基板を
粗洗浄するとともに、ロードステージを兼ねた粗洗浄ユ
ニット62と、図1に示す基板洗浄装置(基板処理装
置)64等からなる。前処理槽58及びめっき処理槽6
0は、複数枚の基板を同時に処理するものでも、枚葉式
であってもよい。また、めっき液や処理液を定常的に保
持するディップ型、あるいはその都度給液と排出を繰り
返す形式であってもよい。
FIG. 2 is a diagram showing an outline of a plating apparatus in which the substrate processing apparatus (substrate cleaning apparatus) shown in FIG. 1 is incorporated. This plating apparatus includes load / unload units 50 and 52 for receiving or unloading a substrate cassette (not shown) accommodating a substrate (not shown) such as a semiconductor wafer as a material to be processed, and a substrate 1 Two transfer robots 54 and 56 for transferring the substrates one by one, a pretreatment tank 58 for performing a pretreatment such as coating with a treatment liquid on the substrate surface, a plating treatment tank 60 for performing a plating treatment, and a rough substrate. It comprises a rough cleaning unit 62 that also functions as a load stage while cleaning, a substrate cleaning apparatus (substrate processing apparatus) 64 shown in FIG. Pretreatment tank 58 and plating treatment tank 6
0 may be one that simultaneously processes a plurality of substrates or may be a single wafer processing type. Further, it may be a dip type in which a plating solution or a processing solution is constantly held, or a type in which supply and discharge are repeated each time.

【0033】このような構成のめっき装置において、め
っき処理を行う方法を1枚の基板(図示せず)の処理流
れに沿って説明する。まず、基板を収納した基板カセッ
トがロード・アンロードユニット50,52に装着され
る。次に、搬送ロボット54によって基板カセットより
基板を1枚ずつ取り出し、粗洗浄ユニット(ロードステ
ージ)62に移す。この基板を搬送ロボット56が受け
取り、例えば処理液の入った前処理槽58に装着する。
そして、所定の時間、基板を処理液に浸漬させて前処理
を行った後に、搬送ロボット56で前処理装置58より
前処理済みの基板を取り出し、その基板をめっき液を含
むめっき処理槽60に装着して、電気銅めっきを行う。
A method of performing a plating process in the plating apparatus having such a configuration will be described along the process flow of one substrate (not shown). First, the substrate cassette containing the substrates is mounted on the load / unload units 50 and 52. Next, the transfer robot 54 takes out the substrates one by one from the substrate cassette and transfers them to the rough cleaning unit (load stage) 62. The substrate is received by the transfer robot 56, and mounted on, for example, a pretreatment tank 58 containing a treatment liquid.
Then, after the substrate is immersed in the treatment liquid for a predetermined time to perform the pretreatment, the transfer robot 56 takes out the pretreated substrate from the pretreatment device 58 and places the substrate in the plating treatment tank 60 containing the plating liquid. Mount and perform electrolytic copper plating.

【0034】めっきが完了した後、搬送ロボット56が
めっき済み基板をめっき処理槽60から取り出し、粗洗
浄ユニット62に装着する。ここで、第1回目の基板の
洗浄(粗洗浄)が行われる。次に、搬送ロボット54が
基板を粗洗浄ユニット62から取り出し、基板洗浄装置
64に移して第2回目の洗浄を行うとともに、連続して
乾燥を行う。次に、搬送ロボット54により、基板は基
板洗浄装置64からロード・アンロードユニット50,
52にある基板カセットに移され、清浄なめっき済み基
板として搬出され、例えばCMP等の次工程に移送され
る。なお、本装置では、前処理槽58およびめっき処理
槽60は複数あり、搬送ロボット54,56は、基板を
連続的に効率よく処理するように制御およびプログラミ
ングされており、非常に稼働率の高い装置となってい
る。
After the plating is completed, the transfer robot 56 takes out the plated substrate from the plating treatment tank 60 and mounts it on the rough cleaning unit 62. Here, the first cleaning of the substrate (rough cleaning) is performed. Next, the transfer robot 54 takes out the substrate from the rough cleaning unit 62, transfers it to the substrate cleaning device 64, performs the second cleaning, and continuously performs the drying. Next, the transfer robot 54 transfers the substrate from the substrate cleaning device 64 to the load / unload unit 50,
It is transferred to the substrate cassette in 52, carried out as a clean plated substrate, and transferred to the next step such as CMP. In this apparatus, there are a plurality of pretreatment baths 58 and plating treatment baths 60, and the transfer robots 54, 56 are controlled and programmed so as to continuously and efficiently process the substrates, and the operating rate is very high. It is a device.

【0035】図3は、図1に示す基板洗浄装置(基板処
理装置)を組み込んだCMP装置を示す。図3に示すよ
うに、このCMP装置には、全体が長方形をなす床上の
スペースの一端側に一対の研磨部201a,201bが
左右に対向して配置され、他端側にそれぞれ基板カセッ
トを載置する一対のロード・アンロードユニット202
a,202bが配置されている。研磨部201a,20
1bとロード・アンロードユニット202a,202b
とを結ぶ線上には、基板を搬送する搬送ロボット204
a,204bが2台配置されて搬送ラインが形成されて
いる。この搬送ラインの両側には、それぞれ1台の反転
機205,206とこの反転機205,206を挟んで
粗洗浄を行う粗洗浄ユニット207a,207bと図1
に示す基板洗浄装置(基板処理装置)208a,208
bとが配置されている。
FIG. 3 shows a CMP apparatus incorporating the substrate cleaning apparatus (substrate processing apparatus) shown in FIG. As shown in FIG. 3, in this CMP apparatus, a pair of polishing sections 201a and 201b are arranged to face each other at one end of a space on the floor having a rectangular shape, and a substrate cassette is mounted on each of the other ends. Place a pair of load / unload units 202
a and 202b are arranged. Polishing parts 201a, 20
1b and load / unload unit 202a, 202b
A transfer robot 204 for transferring the substrate is provided on the line connecting
Two a and 204b are arranged to form a transfer line. On both sides of this transfer line, one reversing machine 205, 206 and rough cleaning units 207a, 207b for carrying out rough cleaning with the reversing machine 205, 206 interposed respectively are shown in FIG.
Substrate cleaning apparatus (substrate processing apparatus) 208a, 208 shown in FIG.
b and are arranged.

【0036】2つの研磨部201a,201bは、基本
的に同一の仕様の装置が搬送ラインに対称に配置されて
おり、それぞれ、上面に研磨布が貼付された研磨テーブ
ル211と、研磨対象物である基板を真空吸着により保
持し、これを研磨テーブル211に押圧して研磨するト
ップリングユニット212と、研磨テーブル211上の
研磨布の目立て(ドレッシング)を行うドレッシングユ
ニット213とを備えている。また、研磨部201a,
201bには、それぞれの搬送ライン側に、基板をトッ
プリングユニット212との間で授受するプッシャー2
14が設けられている。なお研磨テーブルは、ターンテ
ーブル方式、スクロール方式、ベルト方式等のいずれで
もよい。
The two polishing units 201a and 201b basically have the same specifications and are arranged symmetrically with respect to the transfer line. The polishing table 211 has a polishing cloth attached to its upper surface, and the polishing target is a polishing object. A top ring unit 212 that holds a certain substrate by vacuum suction and presses it onto the polishing table 211 to polish it, and a dressing unit 213 that dresses the polishing cloth on the polishing table 211 are provided. In addition, the polishing unit 201a,
The pusher 2 for transferring the substrate to and from the top ring unit 212 is provided on each of the transfer lines 201b.
14 are provided. The polishing table may be a turntable type, a scroll type, a belt type, or the like.

【0037】搬送ロボット204a,204bは、水平
面内で屈折自在な関節アームを有しており、それぞれ上
下に2つの把持部をドライフィンガーとウェットフィン
ガーとして使い分けている。本実施形態では2台のロボ
ットが使用されるので、基本的に第1ロボット204a
は反転機205,206よりカセット202a,202
b側の領域を、第2ロボット204bは反転機205,
206より研磨部201a,201b側の領域をそれぞ
れ受け持つ。
Each of the transfer robots 204a and 204b has a joint arm that is bendable in a horizontal plane, and uses two upper and lower grips as a dry finger and a wet finger, respectively. Since two robots are used in this embodiment, the first robot 204a is basically used.
Indicates cassettes 202a, 202 from the reversing machines 205, 206.
The second robot 204b uses the reversing machine 205,
The areas on the side of the polishing portions 201a and 201b with respect to 206 are respectively taken over.

【0038】反転機205,206は半導体ウエハの上
下を反転させるもので、搬送ロボット204a,204
bのハンドが到達可能な位置に配置されている。本実施
形態では、2つの反転機205,206をドライ基板を
扱うものと、ウエット基板を扱うものとに使い分けてい
る。粗洗浄(一次洗浄)を行う粗洗浄ユニット207
a,207bの形式は任意であるが、例えば、スポンジ
付きのローラで基板の表裏両面を拭う形式の洗浄ユニッ
トである。
The reversing machines 205 and 206 are for reversing the semiconductor wafer upside down, and the transfer robots 204a and 204a.
It is arranged at a position where the hand of b can reach. In the present embodiment, the two reversing machines 205 and 206 are separately used for handling a dry substrate and for handling a wet substrate. Rough cleaning unit 207 for performing rough cleaning (primary cleaning)
The type of a and 207b is arbitrary, but for example, it is a cleaning unit of the type in which both the front and back surfaces of the substrate are wiped with a roller having a sponge.

【0039】このような構成のCMP装置において、C
MP処理を行う方法を1枚の基板(図示せず)の処理流
れに沿って説明する。まず、基板を収納した基板カセッ
トがロード・アンロードユニット202a,202bに
装着される。次に、搬送ロボット204aによって基板
カセットより基板を1枚ずつ取り出し、反転機205に
移して反転させる。この反転後の基板を搬送ロボット2
04bが受け取り、プッシャー214に移す。このプッ
シャー214上の基板をトップリングユニット212で
吸着保持し、このトップリングユニット212を介して
基板を回転させつつ、回転させた研磨テーブル211に
所定の圧力で押付け、これによって、基板の表面(下
面)を研磨する。そして、研磨後の基板をプッシャー2
14に戻す。
In the CMP apparatus having such a configuration, C
A method of performing MP processing will be described along the processing flow of one substrate (not shown). First, the substrate cassette containing the substrates is mounted on the load / unload units 202a and 202b. Next, the transfer robot 204a takes out the substrates one by one from the substrate cassette and transfers them to the reversing machine 205 to invert them. The transfer robot 2 transfers the substrate after the reversal.
04b receives and transfers to pusher 214. The substrate on the pusher 214 is suction-held by the top ring unit 212, and the substrate is rotated through the top ring unit 212, and is pressed against the rotated polishing table 211 with a predetermined pressure, whereby the surface of the substrate ( Polish the bottom surface). Then, the polished substrate is pushed by a pusher 2
Return to 14.

【0040】次に、研磨後の基板を搬送ロボット204
bがプッシャー214から取り出し、粗洗浄ユニット2
07aに装着する。ここで、第1回目の基板の洗浄(粗
洗浄)が行われる。次に、搬送ロボット204aが基板
を粗洗浄ユニット207aから取り出し、反転機205
で反転させる。しかる後、搬送ロボット204aが基板
を基板洗浄装置208aに移して第2回目の洗浄を行う
とともに、連続して乾燥を行う。次に、搬送ロボット2
04aにより、基板は基板洗浄装置208aからロード
・アンロードユニットにある基板カセット202a,2
02bに移され、清浄なCMP処理済みの基板として出
庫される。
Then, the substrate after polishing is transferred to the robot 204.
b is removed from the pusher 214, and the rough cleaning unit 2
It is attached to 07a. Here, the first cleaning of the substrate (rough cleaning) is performed. Next, the transfer robot 204a takes out the substrate from the rough cleaning unit 207a, and the reversing machine 205
Invert with. After that, the transfer robot 204a moves the substrate to the substrate cleaning device 208a to perform the second cleaning and continuously dry the substrate. Next, the transfer robot 2
04a allows the substrate to be transferred from the substrate cleaning device 208a to the substrate cassettes 202a, 2a in the loading / unloading unit.
It is moved to 02b and is discharged as a clean CMP-processed substrate.

【0041】[0041]

【発明の効果】以上説明したように、本発明によれば、
親水性部材の表面に薬液を含む洗浄液を供給して該表面
を洗浄することで、親水性部材の表面が、基板からの汚
れた処理液や、空気中の有機物などにより汚染され、疎
水表面となることを防止することができる。これによっ
て、親水性部材を使用した装置構成部材を装置から取外
したり、また装置を停止したりすることなく、装置構成
部材(親水性部材)の有する親水性を維持することがで
きる。
As described above, according to the present invention,
By supplying a cleaning liquid containing a chemical solution to the surface of the hydrophilic member and cleaning the surface, the surface of the hydrophilic member is contaminated with the treatment liquid soiled from the substrate, organic matter in the air, etc. Can be prevented. As a result, the hydrophilicity of the device component (hydrophilic member) can be maintained without removing the device component using the hydrophilic member from the device or stopping the device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態の基板洗浄装置に適用した
基板処理装置を示す断面図である。
FIG. 1 is a cross-sectional view showing a substrate processing apparatus applied to a substrate cleaning apparatus according to an embodiment of the present invention.

【図2】図1に示す基板洗浄装置(基板洗浄装置)を組
み込んだめっき装置の平面配置図である。
FIG. 2 is a plan layout view of a plating apparatus incorporating the substrate cleaning apparatus (substrate cleaning apparatus) shown in FIG.

【図3】図1に示す基板洗浄装置(基板洗浄装置)を組
み込んだCMP装置の平面配置図である。
FIG. 3 is a plan layout view of a CMP apparatus incorporating the substrate cleaning apparatus (substrate cleaning apparatus) shown in FIG.

【符号の説明】[Explanation of symbols]

10 洗浄カバー 12 基板保持部 16 支持板 18 スピンチャック 20 表面ノズル(処理液供給部) 22 裏面ノズル(処理液供給部) 24 飛散防止カップ 28 気水分離器 40a〜40d 親水性部材 42 洗浄ノズル(洗浄液供給部) W 基板 10 Wash cover 12 Substrate holder 16 Support plate 18 Spin chuck 20 Surface nozzle (treatment liquid supply part) 22 Backside nozzle (treatment liquid supply unit) 24 Shatterproof cup 28 steam separator 40a-40d hydrophilic member 42 Cleaning nozzle (cleaning liquid supply unit) W board

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/306 H01L 21/306 J Fターム(参考) 3B201 AA02 AA03 AB34 BB24 BB92 BB93 BB96 CC01 CC13 CD11 5F043 DD13 EE07 EE08 EE40 Front page continuation (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 21/306 H01L 21/306 JF term (reference) 3B201 AA02 AA03 AB34 BB24 BB92 BB93 BB96 CC01 CC13 CD11 5F043 DD13 EE07 EE08 EE40

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 基板を保持し回転させる基板保持部を有
し、この基板保持部で保持した基板に処理液を供給して
基板を処理する基板処理装置において、 処理液を供給して基板を処理する時に処理液が付着する
装置構成部材の少なくとも表面に親水性部材を使用する
とともに、前記親水性部材の表面に薬液を含む洗浄液を
供給する洗浄液供給部を備えたことを特徴とする基板処
理装置。
1. A substrate processing apparatus which has a substrate holding unit for holding and rotating a substrate, and supplies a processing liquid to the substrate held by the substrate holding unit to process the substrate. A substrate processing, characterized in that a hydrophilic member is used on at least the surface of an apparatus constituent member to which the processing liquid adheres during processing, and a cleaning liquid supply unit for supplying a cleaning liquid containing a chemical liquid to the surface of the hydrophilic member is provided. apparatus.
【請求項2】 前記装置構成部材は、基板を保持して回
転させる基板保持部、該基板保持部で保持した基板に処
理液を供給する処理液供給部及び前記基板保持部の周囲
を包囲して処理液の飛散を防止する飛散防止カップを含
むことを特徴とする請求項1記載の基板処理装置。
2. The apparatus constituting member encloses a substrate holding part for holding and rotating a substrate, a processing liquid supply part for supplying a processing liquid to the substrate held by the substrate holding part, and a periphery of the substrate holding part. The substrate processing apparatus according to claim 1, further comprising a scattering prevention cup for preventing the processing liquid from scattering.
【請求項3】 前記洗浄液は、アルカリまたは酸化剤の
少なくとも一方を含む液であることを特徴とする請求項
1または2記載の基板処理装置。
3. The substrate processing apparatus according to claim 1, wherein the cleaning liquid is a liquid containing at least one of alkali and oxidant.
【請求項4】 基板保持部で保持した基板に処理液を供
給して基板を処理する際に処理液が付着する装置構成部
材の少なくとも表面に親水性部材を使用し、 前記親水性部材の表面を、薬液を含む洗浄液で洗浄する
ことを特徴とする基板処理装置の洗浄方法。
4. A hydrophilic member is used as at least the surface of an apparatus constituting member to which the processing liquid is attached when the processing liquid is supplied to the substrate held by the substrate holding part and the hydrophilic member is used as the surface of the hydrophilic member. The method for cleaning a substrate processing apparatus comprises cleaning the substrate with a cleaning liquid containing a chemical liquid.
【請求項5】 前記洗浄液は、アルカリまたは酸化剤の
少なくとも一方を含む液であることを特徴とする請求項
4記載の基板処理装置の洗浄方法。
5. The cleaning method for a substrate processing apparatus according to claim 4, wherein the cleaning liquid is a liquid containing at least one of an alkali and an oxidizing agent.
【請求項6】 処理液を供給して基板を処理する時に処
理液が付着する装置構成部材の少なくとも表面に親水性
部材を使用するとともに、前記親水性部材の表面に薬液
を含む洗浄液を供給する洗浄液供給部を備えた洗浄装置
と、 基板の表面にめっきを施すめっき処理槽とを有すること
を特徴とするめっき装置。
6. A hydrophilic member is used on at least the surface of an apparatus constituting member to which the processing liquid is attached when the processing liquid is supplied to process the substrate, and a cleaning liquid containing a chemical liquid is supplied to the surface of the hydrophilic member. A plating apparatus comprising: a cleaning apparatus having a cleaning liquid supply unit; and a plating treatment tank for plating the surface of a substrate.
【請求項7】 処理液を供給して基板を処理する時に処
理液が付着する装置構成部材の少なくとも表面に親水性
部材を使用するとともに、前記親水性部材の表面に薬液
を含む洗浄液を供給する洗浄液供給部を備えた洗浄装置
と、 基板の表面を研磨する研磨テーブル及びトップリングを
有する研磨部と、 基板を搬送する搬送ロボットとを有することを特徴とす
るCMP装置。
7. A hydrophilic member is used on at least the surface of an apparatus constituting member to which the processing liquid adheres when the processing liquid is supplied to process the substrate, and a cleaning liquid containing a chemical liquid is supplied to the surface of the hydrophilic member. A CMP apparatus comprising: a cleaning device having a cleaning liquid supply unit, a polishing unit having a polishing table and a top ring for polishing the surface of a substrate, and a transfer robot for transferring the substrate.
JP2001289522A 2001-09-21 2001-09-21 Substrate treating device and its cleaning method Pending JP2003100687A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
JP2003100687A true JP2003100687A (en) 2003-04-04

Family

ID=19112000

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Country Link
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WO2004107427A1 (en) * 2003-05-30 2004-12-09 Ebara Corporation Substrate cleaning apparatus and method
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US10629459B2 (en) 2006-09-15 2020-04-21 SCREEN Holdings Co., Ltd. Substrate processing apparatus
US10468273B2 (en) 2006-09-15 2019-11-05 SCREEN Holdings Co., Ltd. Substrate processing method
US8815048B2 (en) 2006-09-15 2014-08-26 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
JP2009130227A (en) * 2007-11-27 2009-06-11 Fujitsu Ltd Manufacturing method of electronic device
JP2010149003A (en) * 2008-12-24 2010-07-08 Ebara Corp Liquid-scattering prevention cup of substrate processing apparatus, substrate processing apparatus and method for operating the apparatus
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US9396974B2 (en) 2010-09-27 2016-07-19 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
KR101293907B1 (en) 2010-09-27 2013-08-06 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate processing apparatus and substrate processing method
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