JP3289469B2 - Substrate cleaning device and cleaning method - Google Patents
Substrate cleaning device and cleaning methodInfo
- Publication number
- JP3289469B2 JP3289469B2 JP03397894A JP3397894A JP3289469B2 JP 3289469 B2 JP3289469 B2 JP 3289469B2 JP 03397894 A JP03397894 A JP 03397894A JP 3397894 A JP3397894 A JP 3397894A JP 3289469 B2 JP3289469 B2 JP 3289469B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- cleaning liquid
- inner tank
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は基板の両面を短時間で効
率よく洗浄が可能な枚葉式の洗浄装置とその洗浄方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer type cleaning apparatus capable of efficiently cleaning both surfaces of a substrate in a short time and a cleaning method thereof.
【０００２】[0002]
【従来の技術】半導体デバイスはシリコン（Si) で代表
される単体半導体またはガリウム砒素(GaAs)で代表され
る化合物半導体よりなり、円筒状をした単結晶インゴッ
トを約500 μm の厚さにスライスし、研磨と表面処理を
行なって清浄な基板面を得た後、この基板（ウエハ) を
単位として薄膜形成技術，写真蝕刻技術（フォトリソグ
ラフィ），不純物元素注入技術などを適用して多数の素
子をマトリックス状に作り、最後にウエハを素子間絶縁
領域で切断することで個々の素子が作られている。2. Description of the Related Art A semiconductor device is composed of a single semiconductor represented by silicon (Si) or a compound semiconductor represented by gallium arsenide (GaAs), and is obtained by slicing a cylindrical single crystal ingot into a thickness of about 500 μm. After polishing and surface treatment to obtain a clean substrate surface, a large number of devices are fabricated using this substrate (wafer) as a unit by applying thin film forming technology, photolithography technology (photolithography), impurity element implantation technology, etc. Each device is formed by forming the device in a matrix and finally cutting the wafer at the inter-device insulating region.
【０００３】こゝで、写真蝕刻技術や不純物元素注入技
術には各種の薬品が使用されることから、各処理工程後
の洗浄はウエハ単位で行なわれており、従来より洗浄液
を利用した片面洗浄が行なわれている。すなわち、ウエ
ハ保持用の真空チャックにウエハをセットし、ウエハを
回転させるなどの方法で洗浄液をシャワー方式やスプレ
イ方式で供給してウエハの洗浄を行なっている。Here, since various chemicals are used in the photolithography technology and the impurity element implantation technology, cleaning after each processing step is performed for each wafer, and one-side cleaning using a cleaning solution has been conventionally performed. Is being done. That is, the wafer is set on a vacuum chuck for holding the wafer, and the cleaning liquid is supplied by a shower method or a spray method by a method such as rotating the wafer, thereby cleaning the wafer.
【０００４】然し、このように真空チャックでウエハを
保持しながら洗浄する場合はウエハとチャックの接触部
の洗浄が不充分になり、また、裏面の洗浄が不充分にな
っていた。However, when cleaning is performed while holding the wafer by the vacuum chuck, the cleaning of the contact portion between the wafer and the chuck is insufficient, and the cleaning of the back surface is also insufficient.
【０００５】[0005]
【発明が解決しようとする課題】従来のウエハ洗浄は片
面洗浄が多く、そのために、チャック保持部分や裏面の
洗浄が不充分であると云う問題がある。そこで、洗浄液
を大量に消費することなしに単時間に効率よく両面洗浄
を行なうことが課題である。Conventional wafer cleaning often involves one-sided cleaning, which causes a problem that cleaning of the chuck holding portion and the back surface is insufficient. Therefore, it is an object to efficiently perform double-sided cleaning in a single time without consuming a large amount of the cleaning liquid.
【０００６】[0006]
【課題を解決するための手段】上記の課題は同心円状を
し、洗浄液供給ノズルから供給される洗浄液を受けてオ
ーバーフローさせる内槽と、排水孔を備えてオーバーフ
ローした洗浄液を受容する外槽と、内槽の中央にあっ
て、ウエハの洗浄を行なう受渡しトレイを頂部に備え、
上下動が可能で中央に洗浄液の流水孔を、下部に羽根車
と封止板を備えた上下機構部とからなり、上下機構部が
降下する際には封止板により内槽を封止し、また、上昇
する際には受渡しトレイに載置してあるウエハが搬送手
段のヘッドに当接するよう形成されているウエハ洗浄装
置の使用により解決することができる。SUMMARY OF THE INVENTION The above-mentioned object is to provide an inner tank which is concentric and receives a cleaning liquid supplied from a cleaning liquid supply nozzle and overflows, an outer tank having a drain hole and receiving the overflowing cleaning liquid, In the center of the inner tank, a transfer tray for cleaning the wafer is provided at the top,
It can move up and down and has a washing water flow hole in the center and an up and down mechanism with an impeller and a sealing plate at the bottom.When the up and down mechanism is lowered, the inner tank is sealed by the sealing plate. In addition, the problem can be solved by using a wafer cleaning apparatus which is formed so that the wafer placed on the delivery tray is brought into contact with the head of the transfer means when ascending.
【０００７】[0007]
【作用】本発明に係るウエハ洗浄装置の特徴は、 枚葉式であって総て自動化されていること、 洗浄装置への搬入と搬出機構を併せもっているこ
と、 両面洗浄を行なうために下からの洗浄液によるオー
バーフロー洗浄と上からのシャワー洗浄を行なうこと、 オーバーフロー洗浄に当たっては下からノズルによ
り洗浄液を吹きつけるようにすることにより洗浄効果を
増したこと、 ウエハに回転を与えることにより洗浄効果を増した
こと、 洗浄が終了した後は乾燥したガスを吹きつけて乾燥
するようにしたこと、 一回のウエハ洗浄毎に洗浄水が入れ代わるようにし
たこと、などである。[Function] The features of the wafer cleaning apparatus according to the present invention are that it is a single-wafer type, all of which are automated, that it has a mechanism for carrying in and out of the cleaning apparatus, and that a double-sided cleaning is performed from below. Performing overflow cleaning with a cleaning liquid and shower cleaning from the top.In the overflow cleaning, the cleaning effect is increased by spraying the cleaning liquid from the bottom with a nozzle.The cleaning effect is increased by applying rotation to the wafer. After the cleaning was completed, dry gas was blown to dry the wafer, and the cleaning water was replaced every time the wafer was cleaned.
【０００８】図１はウエハの授受を行なっている状態を
示す本装置の断面図、図２は洗浄を行なっている状態を
示す断面図である。すなわち、本発明に係る洗浄装置は
特定位置に設けられており、図１に示すように上に搬送
手段１があり、これには真空吸着機構と乾燥ガス（例え
ば窒素Ｎ2ガス) の吹き出し機能を有している。そして
図の場合、ヘッド２が真空チャックとして働いてウエハ
３を吸着して受渡しトレイ４にまで運んでおり、また、
洗浄後はヘッド２より乾燥ガスを所定の時間噴射してウ
エハ３の表面を乾燥させた後、真空吸着機構に切り替わ
り、ヘッド２で真空吸着して搬送手段１でウエハ３を次
の工程へ搬送するよう形成されている。FIG. 1 is a cross-sectional view of the present apparatus showing a state where a wafer is being transferred, and FIG. 2 is a cross-sectional view showing a state where the wafer is being cleaned. That is, the cleaning apparatus according to the present invention is provided at a specific position, and as shown in FIG. 1, there is a conveying means 1 above, which has a vacuum suction mechanism and a blowing function of a drying gas (for example, nitrogen N 2 gas). have. In the case shown in the figure, the head 2 works as a vacuum chuck, sucks the wafer 3 and carries it to the delivery tray 4.
After the cleaning, the surface of the wafer 3 is dried by injecting a dry gas from the head 2 for a predetermined time, then switched to a vacuum suction mechanism, the head 2 is suctioned, and the transfer means 1 transfers the wafer 3 to the next step. It is formed so that.
【０００９】こゝで、洗浄機は上下機構部５を中央と
し、これを囲む内槽６と外槽７とから成り立っており、
搬送手段１からウエハ３を受けた受渡しトレイ４は上下
機構部５の封止板９が内槽６のＯリング10に当たるまで
降下し、この封止板９により内槽６がシール（Seal) さ
れて図２の状態になる。Here, the washing machine is composed of an inner tank 6 and an outer tank 7 surrounding the upper and lower mechanism section 5 at the center thereof.
The delivery tray 4 that has received the wafer 3 from the transfer means 1 descends until the sealing plate 9 of the vertical mechanism unit 5 hits the O-ring 10 of the inner tank 6, and the inner tank 6 is sealed by the sealing plate 9. FIG.
【００１０】このように上部機構部５の封止板９により
内槽６がシールされると、洗浄液供給ノズル11より洗浄
液が噴出して内槽６を満たし、一杯となると水洗バスの
底部13に設けられている複数の穴14を通して洗浄液は水
洗バス12を満たし、オーバーフローした洗浄水は外槽７
に溢れ、内槽６と外槽７との間の底に設けられている排
水孔15から除去される。When the inner tank 6 is sealed by the sealing plate 9 of the upper mechanism 5 as described above, the cleaning liquid is jetted from the cleaning liquid supply nozzle 11 to fill the inner tank 6, and when the inner tank 6 is full, the cleaning liquid is supplied to the bottom 13 of the washing bath. The washing liquid fills the washing bath 12 through a plurality of holes 14 provided, and the overflowing washing water is supplied to the outer tank 7.
And is removed from a drain hole 15 provided at the bottom between the inner tank 6 and the outer tank 7.
【００１１】なお、洗浄液が水洗バスの底部13にある穴
14を通って水洗バス12に浸入するとウエハ３は浮き上が
るが、これに先立って外槽７の上方に設けてあるリング
状シャワー17より洗浄液を噴射してウエハ３の表面を洗
浄して浮上せしめない。The washing liquid is provided in a hole at the bottom 13 of the washing bath.
When the wafer 3 enters the washing bath 12 through 14, the wafer 3 is lifted up. However, prior to this, the cleaning liquid is sprayed from a ring-shaped shower 17 provided above the outer tank 7 to wash the surface of the wafer 3 so that it does not float. .
【００１２】次に、ウエハの洗浄は上下機構部５の外側
を流れる洗浄液だけでなく、上下機構部５の中を流れる
洗浄液によっても行なわれている。すなわち、ウエハ３
の洗浄を行なう受渡しトレイ４を上部にもつ上下機構部
５の封止板９の上には羽根車19があり、洗浄液供給ノズ
ル11より噴射する洗浄液の水圧を受けて回転するよう形
成されている。 また、この上の上下機構部５の中央に
は流水孔20があり、下部に流水導入孔21があり、上部に
は放出角度の異なる複数のノズル（この図の場合は４
個）22があり、受渡しトレイ４の底のパンチングプレー
トを通じてウエハ３に洗浄液を供給して洗浄する。な
お、流水導入孔21の上部には水流板24が突出しており、
洗浄液供給ノズル11より供給された洗浄液が流水導入穴
21に入り易くしている。Next, the cleaning of the wafer is performed not only by the cleaning liquid flowing outside the vertical mechanism 5 but also by the cleaning liquid flowing inside the vertical mechanism 5. That is, the wafer 3
An impeller 19 is provided on the sealing plate 9 of the vertical mechanism unit 5 having the transfer tray 4 for cleaning the upper part thereof, and is configured to rotate under the pressure of the cleaning liquid sprayed from the cleaning liquid supply nozzle 11. . A flowing water hole 20 is provided at the center of the upper and lower mechanism 5, a flowing water introducing hole 21 is provided at a lower portion, and a plurality of nozzles having different discharge angles are provided at an upper portion (4 nozzles in this case).
The cleaning liquid is supplied to the wafer 3 through the punching plate at the bottom of the delivery tray 4 to perform cleaning. In addition, a water flow plate 24 projects above the flowing water introduction hole 21,
The cleaning liquid supplied from the cleaning liquid supply nozzle 11 is
It is easy to enter 21.
【００１３】このような構成をとることによりウエハ３
は表裏両面から充分に洗浄され、洗浄時間が経過する
と、洗浄液供給ノズル11よりの洗浄液供給が止まり、同
時に上下機構部５が上昇して内槽６の中の洗浄液を落と
し、一方、受渡しトレイ９の中のウエハ３には搬送手段
１のヘッド２からＮ2 などの乾燥ガスを吹きつけて乾燥
させた後、真空吸着して次の工程へ搬送が行なわれる。With such a configuration, the wafer 3
After the cleaning time has elapsed, the supply of the cleaning liquid from the cleaning liquid supply nozzle 11 stops, and at the same time, the vertical mechanism 5 rises to drop the cleaning liquid in the inner tank 6. after the wafer 3 in the drying by blowing dry gas such as N 2 from the head 2 of the transport means 1, it is transported to the next process is performed by vacuum suction.
【００１４】[0014]
【実施例】枚葉処理により洗浄するSiウエハの大きさが
６インチであり、これを洗浄した場合について説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS A case where the size of a Si wafer to be cleaned by single-wafer processing is 6 inches and the wafer is cleaned will be described.
【００１５】装置はネジを含め、塩化ビニル（ＰＶＣ）
で形成し、また、配管は直径が1/2インチでテフロン系
樹脂（ＰＦＡ）を用いて形成した。こゝで、オーバーフ
ロー洗浄が行なわれる水洗バス12の容量は３リットルと
し、また、リング状シャワー17からの流速は1.5 〜５リ
ットル／分とし、最適条件として今回は３リットル／分
とした。[0015] The equipment, including screws, vinyl chloride (PVC)
The pipe was formed using a Teflon resin (PFA) having a diameter of 1/2 inch. Here, the capacity of the washing bath 12 for performing the overflow washing was 3 liters, the flow rate from the ring-shaped shower 17 was 1.5 to 5 liters / minute, and the optimum condition was 3 liters / minute this time.
【００１６】また、上下機構部５の中を走る流通孔20の
直径は３〜７ mm が適当であるが、今回は６ mm とし、
また、ノズル22の直径は２〜５ mm が適当であるが、今
回は３ mm とした。The diameter of the flow hole 20 running in the vertical mechanism 5 is suitably 3 to 7 mm, but this time it is 6 mm.
The diameter of the nozzle 22 is suitably 2 to 5 mm, but this time it is 3 mm.
【００１７】次に、洗浄液供給ノズル11からの流量は５
〜10リットル／分が適当であるが、今回は７リットル／
分の流速で純水を供給して洗浄を行なった。その結果、
薬液リンス後の水洗で、従来は比抵抗が４ＭΩから16Ｍ
Ωに回復するのに10分を要ししていたが、本発明に係る
洗浄装置の使用により４〜５分でウエハの両面洗浄を完
全な形で自動的に行なうことができた。Next, the flow rate from the cleaning liquid supply nozzle 11 is 5
~ 10 l / min is appropriate, but this time 7 l / min
Cleaning was performed by supplying pure water at a flow rate of 1 minute. as a result,
Rinsing after chemical rinsing. Conventionally, the specific resistance was 4MΩ to 16M.
Although it took 10 minutes to recover to Ω, the cleaning apparatus according to the present invention was able to completely and completely clean both sides of the wafer in 4 to 5 minutes.
【００１８】[0018]
【発明の効果】本発明の実施により短時間で効果的な両
面洗浄を行なうことが可能になった。According to the present invention, effective double-sided cleaning can be performed in a short time.
【図１】 基板の授受を行なっている状態を示す基板洗
浄装置の断面図である。FIG. 1 is a cross-sectional view of a substrate cleaning apparatus showing a state where a substrate is being exchanged.
【図２】 洗浄状態を示す基板洗浄装置の断面図であ
る。FIG. 2 is a sectional view of the substrate cleaning apparatus showing a cleaning state.
１ 搬送手段 ３ ウエハ（基板） ４ 受渡しトレイ ５ 上下機構部 ６ 内槽 ７ 外槽 ９ 封止板 10 Ｏリング 11 洗浄液供給ノズル 12 水洗バス 13 水洗バスの底部 14 穴 15 排水部 17 リング状シャワー 19 羽根車 20 流水孔 21 流水導入孔 22 ノズル 24 水流板 DESCRIPTION OF SYMBOLS 1 Conveying means 3 Wafer (substrate) 4 Delivery tray 5 Vertical mechanism 6 Inner tank 7 Outer tank 9 Sealing plate 10 O-ring 11 Cleaning liquid supply nozzle 12 Rinse bath 13 Bottom of rinse bath 14 Hole 15 Drain part 17 Ring-shaped shower 19 Impeller 20 Running water hole 21 Running water introduction hole 22 Nozzle 24 Water flow plate
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−252238（ＪＰ，Ａ) 特開 平５−259060（ＪＰ，Ａ) 特開 平６−21032（ＪＰ，Ａ) 実開 平４−30729（ＪＰ，Ｕ) 実開 平４−117435（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/304 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-252238 (JP, A) JP-A-5-259060 (JP, A) JP-A-6-21032 (JP, A) 30729 (JP, U) Hira 4-117435 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/304
Claims (2)
つ搬送し洗浄した後に搬出する洗浄装置が、 同心円状をし、洗浄液供給ノズル（11）から供給される
洗浄水を受けてオーバーフローさせる内槽（６）と、 排水孔（15）を備えてオーバーフローした洗浄液を受容
する外槽（７）と、 前記内槽（６）の中央にあって、基板（３）の洗浄を行
なう受渡しトレイ（４）を頂部に備え、上下動が可能で
中央に洗浄液の流水孔（20）を、下部に羽根車（19）と
封止板（９）を備えた上下機構部（５）とからなり、 該上下機構部（５）が降下する際には封止板（９）が内
槽（６）を封止し、上昇する際には受渡しトレイ（４）
に載置してある基板（３）が搬送手段（１）のヘッド
（２）に当接するよう形成されていることを特徴とする
基板の洗浄装置。1. A cleaning device which conveys a substrate (3), which has been subjected to chemical treatment, one by one, cleans the substrate, and unloads the substrate (3). An inner tank (6) to be drained, an outer tank (7) having a drain hole (15) to receive the overflowed cleaning liquid, and a delivery for cleaning the substrate (3) in the center of the inner tank (6). A tray (4) is provided at the top, and is capable of moving up and down, having a washing water flow hole (20) at the center, and an up-down mechanism (5) having an impeller (19) and a sealing plate (9) at the bottom. When the vertical mechanism (5) descends, the sealing plate (9) seals the inner tank (6), and when it rises, the transfer tray (4)
A substrate (3) mounted on the substrate (1) is formed so as to contact the head (2) of the transport means (1).
（２）で真空チャックして受渡しトレイ（４）の直上に
まで搬送した後、 上下機構部（５）を上昇させて受渡しトレイ（４）で基
板（３）を受け取り、 次に、上下機構部（５）を降下させて該上下機構部
（５）の封止板（９）を内槽（６）のＯリング(10)に当
接させて内槽（６）をシールし、 次に、内槽（６）にある洗浄液供給ノズル(11)より洗浄
液を噴出させ、上下機構部（５）の軸部(16)に設けてあ
る複数のノズル(22)と水洗バス(12)の底部から水洗バス
(12)に洗浄液を供給して規定の時間に亙って基板（３）
の洗浄を行い、 次に、上下機構部（５）を上昇させて内槽（６）中の洗
浄液を排水すると共に受渡しトレイ（４）中にある基板
（３）を搬送手段（１）の直下まで上昇させ、 次に、搬送手段（１）のヘッド（２）より乾燥ガスを吹
きつけて基板（３）上の水を飛散させ、 次に、該ヘッド（２）で該基板（３）を吸着して次の工
程まで搬送させることを特徴とする基板の洗浄方法。2. The substrate (3) is vacuum-chucked by the bed (2) of the transfer means (1) and transferred to a position immediately above the transfer tray (4), and then the transfer tray is raised by raising the vertical mechanism (5). The substrate (3) is received in (4), and then the vertical mechanism (5) is lowered, and the sealing plate (9) of the vertical mechanism (5) is moved to the O-ring (10) of the inner bath (6). And the inner tank (6) is sealed, and then the cleaning liquid is ejected from the cleaning liquid supply nozzle (11) in the inner tank (6), and is provided on the shaft (16) of the vertical mechanism (5). Flush nozzle from the bottom of the plurality of nozzles (22) and the flush bath (12)
The cleaning liquid is supplied to (12) and the substrate (3) is supplied for a specified time.
Then, the vertical mechanism (5) is lifted to drain the cleaning liquid in the inner tank (6), and the substrate (3) in the transfer tray (4) is placed immediately below the transfer means (1). Then, dry gas is blown from the head (2) of the conveying means (1) to scatter water on the substrate (3). Next, the substrate (3) is removed by the head (2). A method for cleaning a substrate, wherein the substrate is sucked and transported to the next step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03397894A JP3289469B2 (en) | 1994-03-04 | 1994-03-04 | Substrate cleaning device and cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03397894A JP3289469B2 (en) | 1994-03-04 | 1994-03-04 | Substrate cleaning device and cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07245283A JPH07245283A (en) | 1995-09-19 |
| JP3289469B2 true JP3289469B2 (en) | 2002-06-04 |
Family
ID=12401585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03397894A Expired - Fee Related JP3289469B2 (en) | 1994-03-04 | 1994-03-04 | Substrate cleaning device and cleaning method |
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| Country | Link |
|---|---|
| JP (1) | JP3289469B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW472296B (en) * | 1999-05-25 | 2002-01-11 | Ebara Corp | Substrate treating apparatus and method of operating the same |
| JP6493095B2 (en) * | 2014-09-18 | 2019-04-03 | セントラル硝子株式会社 | Wafer cleaning method and chemical solution used for the cleaning method |
| WO2016043128A1 (en) * | 2014-09-18 | 2016-03-24 | セントラル硝子株式会社 | Method for cleaning wafer, and chemical used in such cleaning method |
| WO2017030073A1 (en) * | 2015-08-20 | 2017-02-23 | セントラル硝子株式会社 | Wafer washing method, and liquid chemical used in same |
| JP6875630B2 (en) * | 2015-08-20 | 2021-05-26 | セントラル硝子株式会社 | Wafer cleaning method and chemical solution used for the cleaning method |
-
1994
- 1994-03-04 JP JP03397894A patent/JP3289469B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07245283A (en) | 1995-09-19 |
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