JPH02310393A - Device for plating semiconductor substrate - Google Patents
Device for plating semiconductor substrateInfo
- Publication number
- JPH02310393A JPH02310393A JP12915689A JP12915689A JPH02310393A JP H02310393 A JPH02310393 A JP H02310393A JP 12915689 A JP12915689 A JP 12915689A JP 12915689 A JP12915689 A JP 12915689A JP H02310393 A JPH02310393 A JP H02310393A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- plating
- substrate
- pure water
- suction chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 98
- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000011282 treatment Methods 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 29
- 238000000034 method Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000007781 pre-processing Methods 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板鍍金装置に関し、特に枚葉で半導体
基板に鍍金処理を施す半導体基板鍍金装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor substrate plating apparatus, and more particularly to a semiconductor substrate plating apparatus that performs plating treatment on semiconductor substrates in a single wafer manner.
従来、この種の半導体基板鍍金装置は、第５図の概要図
に示すように、半導体基板固定治具５゜２に半導体基板
５０３を固定し、鍍金槽５０１中の鍍金液に浸し、半導
体基板５０３をカソード電極としてアノード電極５０４
との間に鍍金用電源５０５から電流を流す方式や、第６
図の概要図に示すように、噴流式と呼ばれ、噴流カップ
６０１に鍍金液を噴流用ポンプ６０５により底部より導
入して半導体基板表面に当て、カソード電極６０３とア
ノード電極６０６との間に鍍金用電源６０４から電流を
流して鍍金処理を施す方式がある。Conventionally, in this type of semiconductor substrate plating apparatus, as shown in the schematic diagram of FIG. 5, a semiconductor substrate 503 is fixed to a semiconductor substrate fixing jig 5. Anode electrode 504 with 503 as cathode electrode
A method of passing current from the plating power source 505 between the
As shown in the schematic diagram in the figure, this is called a jet type, in which plating solution is introduced from the bottom of a jet cup 601 by a jet pump 605 and applied to the semiconductor substrate surface, and plating is applied between a cathode electrode 603 and an anode electrode 606. There is a method in which plating is performed by applying current from a power source 604.
上述した従来の半導体基板鍍金装置は、半導体基板固定
治具や噴流カップにいちいち作業者が半導体基板をセッ
トしたり外したりしなければならず、そのため作業者の
工数がかなり必要となる。In the conventional semiconductor substrate plating apparatus described above, an operator must set and remove a semiconductor substrate from a semiconductor substrate fixing jig or a jet cup each time, which requires a considerable amount of man-hours for the operator.
又、半導体基板のセットは、ビンセット等を用いるので
、半導体基板にダメージを与える可能性が高くなる。Furthermore, since a bottle set or the like is used to set the semiconductor substrates, there is a high possibility that the semiconductor substrates will be damaged.
更に、従来の半導体基板鍍金装置では、それ自体で前処
理及び鍍金後の水洗、乾燥ができないため、鍍金装置と
は別に前処理装置及び水洗乾燥装置を持たなければなら
ないという欠点がある。Furthermore, the conventional semiconductor substrate plating apparatus cannot perform pretreatment, washing and drying after plating by itself, and therefore has the disadvantage that a pretreatment apparatus and a washing and drying apparatus must be provided separately from the plating apparatus.
本発明は、半導体基板上に配線やバンプを鍍金で形成す
る半導体基板鍍金装置において、半導体基板をローダ部
からアンローダ部へと枚葉で搬送する間に、鍍金前処理
、鍍金処理、水洗乾燥処理を行う処理部を設けた半導体
基板鍍金装置であって、鍍金前処理、鍍金処理、水洗乾
燥処理の各処理の際、配線やバンプを形成する表面を上
にして半導体基板を水平に保持する真空吸着チャックを
有し、かつ真空吸着チャックは鍍金処理の際、半導体基
板表面を上にして保持するアノード電極を兼ね、この真
空吸着チャックの上方に半導体基板と対向して配置され
た鍍金液吐出口を有するカソード電極と、対向配置され
たカソード電極と半導体基板間を吐出口からの鍍金液で
満たすために対向距離を調節する両電極の上下機構とを
有している。In a semiconductor substrate plating apparatus that forms wiring and bumps on a semiconductor substrate by plating, the present invention provides plating pre-treatment, plating treatment, water washing and drying treatment while transporting semiconductor substrates in single wafer form from a loader section to an unloader section. This is a semiconductor substrate plating apparatus that is equipped with a processing section that performs vacuum processing that holds the semiconductor substrate horizontally with the surface on which wiring and bumps will be formed facing up during each of the pre-plating treatment, plating treatment, washing and drying treatment. It has a suction chuck, and the vacuum suction chuck also serves as an anode electrode to hold the semiconductor substrate with the surface facing upward during plating processing, and a plating solution discharge port is placed above the vacuum suction chuck to face the semiconductor substrate. and a mechanism for raising and lowering both electrodes, which adjusts the facing distance in order to fill the gap between the cathode electrode and the semiconductor substrate, which are arranged facing each other, with plating liquid from the discharge port.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例を示す構成図である。FIG. 1 is a block diagram showing a first embodiment of the present invention.
ローダ部１０１に半導体基板が入ったキャリアをセット
すると、半導体基板は順次、前処理部１０２、鍍金部１
０３、水洗乾燥部１０４と運ばれて、最後にアンローダ
部１０５のキャリアに収納される。When a carrier containing semiconductor substrates is set in the loader section 101, the semiconductor substrates are sequentially transferred to the pretreatment section 102, the plating section 1, and the plating section 1.
03, it is transported to the washing and drying section 104 and finally stored in the carrier of the unloader section 105.
第２図は前処理部１０２の概要図である。ローダ部１０
１より搬送機により運ばれてきた半導体基板２０１は、
半導体基板受渡位置２１０において真空吸着チャック２
０２とのセンタリングが行われた後、上下用シリンダ２
０７によって半導体基板受渡位置２１０まで上がってい
る真空吸着チャック２０２に真空吸着される。真空吸引
は真空軸受２０４、シャフト２０３を介してなされる。FIG. 2 is a schematic diagram of the preprocessing section 102. Loader section 10
The semiconductor substrate 201 carried by the conveyor from 1 is
Vacuum suction chuck 2 at semiconductor substrate transfer position 210
After centering with 02, the vertical cylinder 2
07, the semiconductor substrate is vacuum suctioned to the vacuum suction chuck 202 which has been raised to the semiconductor substrate transfer position 210. Vacuum suction is performed via vacuum bearing 204 and shaft 203.
吸着後、半導体基板２０１がカップ２０８内の所定位置
まで下がると、定められた回転数でスピンモータ２０６
が回転してカップリング２０５、シャフト２０３を介し
て真空吸着チャック２０２を回転させ、半導体基板２０
１が回転する。After suction, when the semiconductor substrate 201 is lowered to a predetermined position in the cup 208, the spin motor 206 is rotated at a predetermined rotation speed.
rotates to rotate the vacuum suction chuck 202 via the coupling 205 and shaft 203, and the semiconductor substrate 20 is rotated.
1 rotates.
回転し始めると純水用エアー弁２０９が開き、純水ノズ
ル２１５により純水が半導体基板２０１の表面をぬらす
、この時、排水切換弁２１１は排水側になっている。When rotation begins, the pure water air valve 209 opens, and the pure water nozzle 215 wets the surface of the semiconductor substrate 201 with pure water. At this time, the drain switching valve 211 is on the drain side.
ある定められた時間経過すると、排水用エアー弁２０９
が閉じて純水が止まる。次に排水切換弁２１１が薬品タ
ンク２１２側に切り換わると薬品用エアー弁２１４が開
き、ポンプ２１３が回転して薬品ノズル２１６より薬品
が出て半導体基板２０１の表面の前処理が行われる。After a certain period of time has elapsed, the drainage air valve 209
closes and the pure water stops flowing. Next, when the drain switching valve 211 is switched to the chemical tank 212 side, the chemical air valve 214 is opened, the pump 213 is rotated, and the chemical comes out from the chemical nozzle 216, and the surface of the semiconductor substrate 201 is pretreated.
この処理もある定められた時間経過するとポンプ２１３
が止まり、薬品用エアー弁２１４が閉じて薬品ノズル２
１６から薬品が出るのが止まる。When this process also passes for a certain period of time, the pump 213
stops, the chemical air valve 214 closes, and the chemical nozzle 2
The medicine stops coming out from 16.
又、ここで排水切換弁２１１を排水側に切換えると、純
水用エアー弁２０９が開いて純水ノズル２１５より純水
が出て、半導体基板２０１上の薬品をリンスする。Furthermore, when the drain switching valve 211 is switched to the drain side, the pure water air valve 209 opens and pure water comes out from the pure water nozzle 215 to rinse the chemicals on the semiconductor substrate 201.
所定の時間リンスを行うと、純水用エアー弁２０９が閉
じて純水の供給が停止する。すると、定められた回転数
でスピンモータ２０６が高速回転し、半導体基板２０１
上の水滴を飛ばす。回転が止まると、上下用シリンダ２
０７により、半導体基板２０１が半導体基板受渡位置２
１０まで上がる。真空吸着が切れると半導体基板２０１
は鍍金部に運ばれる。After rinsing for a predetermined period of time, the pure water air valve 209 closes and the supply of pure water is stopped. Then, the spin motor 206 rotates at a predetermined number of rotations at high speed, and the semiconductor substrate 201
Spray the water droplets on top. When the rotation stops, the vertical cylinder 2
07, the semiconductor substrate 201 is transferred to the semiconductor substrate transfer position 2.
It goes up to 10. When the vacuum suction is cut off, the semiconductor substrate 201
is transported to the plating department.
第３図は鍍金部１０３の概要図である。前処理部１０２
より搬送機で運ばれてきた半導体基板３０１は、カップ
３１３の上方まで上がった真空吸着チャック３０２とま
ずセンタリングが行われた後、真空により真空吸着チャ
ック３０２に固定される。真空吸引は真空軸受３０４、
シャフト３０３を介してなされる。FIG. 3 is a schematic diagram of the plating section 103. Pre-processing section 102
The semiconductor substrate 301 carried by a transporter is first centered with the vacuum suction chuck 302 that has risen above the cup 313, and then is fixed to the vacuum suction chuck 302 by vacuum. Vacuum suction is by vacuum bearing 304,
This is done through the shaft 303.
そしてシリンダ３１４によって、図に示した位置まで半
導体基板３０１と真空吸着チャック３０２が下がると、
そこへシリンダ３１５によってアノード電極３０９が半
導体基板３０１よりある一定間隔があくように所定の位
置まで下りてくる。Then, when the semiconductor substrate 301 and the vacuum suction chuck 302 are lowered to the position shown in the figure by the cylinder 314,
Then, the anode electrode 309 is lowered by the cylinder 315 to a predetermined position with a certain distance from the semiconductor substrate 301 .
するとポンプ３０８が作動して、鍍金液３１２は、鍍金
液タンク３０７よりアノード電極３０９の中心に設けら
れた吐出口より、アノード電極３０９と半導体基板３０
１の間が鍍金液３１２で満たされるように流れ、最後は
鍍金液タンク３０７に戻る。Then, the pump 308 is activated, and the plating solution 312 is delivered from the plating solution tank 307 to the anode electrode 309 and the semiconductor substrate 30 through the outlet provided at the center of the anode electrode 309.
The plating liquid 312 flows between the plating liquid 312 and finally returns to the plating liquid tank 307.
アノード電極３０９と半導体基板３０１との間を、アノ
ード電極３０９と半導体基板３０１に鍍金液３１２が充
分に接し、かつ満たされるように流れると、鍍金用電源
３１１が入り鍍金が開始される。電流は鍍金用電源３１
１よりアノード電極３０９、鍍金液３１２、半導体基板
３０１、真空吸着チャック３０２、シャフト３０３と流
れ、スリップリング３１０を介して鍍金用電源３１１に
戻る。When the plating solution 312 flows between the anode electrode 309 and the semiconductor substrate 301 so that the anode electrode 309 and the semiconductor substrate 301 are sufficiently contacted and filled, the plating power source 311 is turned on and plating is started. The current is plating power supply 31
1, flows through the anode electrode 309, the plating solution 312, the semiconductor substrate 301, the vacuum suction chuck 302, and the shaft 303, and returns to the plating power source 311 via the slip ring 310.
所定の時間電流を流して鍍金が終了すると、電流と鍍金
液３１２の吐出が止まる。するとスピンモータ３０６が
回転して、カップリング３０５、シャフト３０３を介し
て真空吸着チャック３０２を回転させ、半導体基板３０
１上の鍍金液の滴を飛ばす、その後、半導体基板３０１
は真空吸着チャック３０２と共に搬送機との受は渡しの
位置まで上がり、搬送機により次の水洗乾燥部１０４ま
で運ばれる。When the plating is completed after the current is applied for a predetermined period of time, the current and the discharge of the plating solution 312 are stopped. Then, the spin motor 306 rotates, rotates the vacuum suction chuck 302 via the coupling 305 and the shaft 303, and removes the semiconductor substrate 30.
1, and then the semiconductor substrate 301
Together with the vacuum suction chuck 302, the receiver with the conveyor is raised to the transfer position, and the conveyor conveys it to the next washing/drying section 104.
第４図は本発明の第２の実施例を示す縦断面図である。FIG. 4 is a longitudinal sectional view showing a second embodiment of the present invention.
この実施例は鍍金前処理、鍍金処理、水洗、乾燥を一つ
のカップで行えるようにしたもので、構造は第１の実施
例で示した前処理部及び鍍金部を合わせたものとなって
いる。In this embodiment, pre-plating treatment, plating treatment, washing, and drying can be performed in one cup, and the structure is a combination of the pre-treatment section and the plating section shown in the first embodiment. .
まず、前処理部としての機能を説明する。搬送機により
運ばれてきた半導体基板は、受渡位置４１３においてセ
ンタリング機構４３０により真空吸着チャック４０２と
のセンタリングが行われた後、シリンダ４０８によって
受渡位置４１３まで上っている真空吸着チャック４０２
に真空吸着される。真空吸引は真空軸受４０４、シャフ
ト４０３を介してなされる。First, the function as a preprocessing section will be explained. The semiconductor substrate carried by the carrier is centered with the vacuum suction chuck 402 by the centering mechanism 430 at the delivery position 413, and then the vacuum suction chuck 402 is moved up to the delivery position 413 by the cylinder 408.
is vacuum-adsorbed. Vacuum suction is performed via vacuum bearing 404 and shaft 403.
吸着後、半導体基板４０１はカップ４０９内のスピン位
置４１２まで下がると、定められた回転数でスピンモー
タ４０７が回転してカップリング４０６、シャフト４０
３を介して真空吸着チャック４０２を回転させ、半導体
基板４０１が回転する。回転し始めると、純水用エアー
弁４２９が開いて純水ノズル４２７がシリンダ４２８に
より前進し、純水が出て半導体基板４０１の表面をぬら
す。この時、排水弁４２１は排水側に切り換わっている
。After being attracted, the semiconductor substrate 401 is lowered to the spin position 412 in the cup 409, and the spin motor 407 rotates at a predetermined number of rotations to rotate the coupling 406 and the shaft 40.
3, the vacuum suction chuck 402 is rotated, and the semiconductor substrate 401 is rotated. When the rotation starts, the pure water air valve 429 opens, the pure water nozzle 427 moves forward by the cylinder 428, and pure water comes out to wet the surface of the semiconductor substrate 401. At this time, the drain valve 421 has been switched to the drain side.
ある定められた時間経過すると、純水用エアー弁４２９
が閉じて純水が止まる。次に、排水切換弁４２１が薬品
タンク４２２側に切り換わると薬品用エアー弁４２４が
開き、シリンダ４２５により薬品ノズル４２６が前進し
、ポンプ４２３が回転して薬品ノズル４２６より薬品が
出て半導体基板４０１の表面の前処理が行われる。After a certain predetermined time has passed, the pure water air valve 429
closes and the pure water stops flowing. Next, when the drain switching valve 421 is switched to the chemical tank 422 side, the chemical air valve 424 is opened, the chemical nozzle 426 is advanced by the cylinder 425, the pump 423 is rotated, and the chemical comes out from the chemical nozzle 426, and the semiconductor substrate Pretreatment of the surface of 401 is performed.
この処理もある定められた時間たつとポンプ４２３が止
まり、薬品用エアー弁４２４が閉じて薬品ノズル４２６
からの薬品が止まる。又、ここで排水切換弁４２１を排
水側に切換えると、純水用エアー弁４２９が開いて純水
ノズル４２７より純水が出て、半導体基板４０１上の薬
品をリンスする。In this process, the pump 423 stops after a certain predetermined period of time, the chemical air valve 424 closes, and the chemical nozzle 426
The medicine from the will stop. Furthermore, when the drain switching valve 421 is switched to the drain side, the pure water air valve 429 opens and pure water comes out from the pure water nozzle 427 to rinse the chemicals on the semiconductor substrate 401.
所定の時間リンスを行うと、純水用エアー弁４２９が閉
じて純水の供給が停止する。すると定められた回転数で
スピンモータ４０７が高速回転して半導体基板４０１上
の水滴を飛ばし、スピン乾燥を行う。回転が止まると、
シリンダ４０８により半導体基板４０１が下がり、シー
ル４１０のＯリング４１１に接して半導体基板４０１の
裏面側がシールされる。After rinsing for a predetermined period of time, the pure water air valve 429 closes and the supply of pure water is stopped. Then, the spin motor 407 rotates at a predetermined number of rotations at a high speed to blow away water droplets on the semiconductor substrate 401, thereby performing spin drying. When the rotation stops,
The semiconductor substrate 401 is lowered by the cylinder 408, and the back side of the semiconductor substrate 401 is sealed by coming into contact with the O-ring 411 of the seal 410.
このシール４１０は樹脂製で、鍍金時に鍍金液を金属製
の真空吸着チャック４０２から遮断することによって鍍
金液のまわり込みを防ぎ、半導体基板４０１の裏面側へ
の鍍金付着を防ぐ役目をしている。This seal 410 is made of resin, and serves to prevent the plating solution from getting around by blocking the plating solution from the metal vacuum suction chuck 402 during plating, and to prevent the plating from adhering to the back side of the semiconductor substrate 401. .
次に、鍍金処理機能について説明する。前処理が終了し
、上記の状態に置かれた半導体基板４０１に対し、シリ
ンダ４２８の動作により上方からアノード電極４１５が
、半導体基板４０１よりある一定間隔があくように所定
の位置まで下りてくる。するとポンプ４１８が作動して
、鍍金液は、鍍金タンク４１７よりパイプ４１４を介し
てアノード電極４１５の中心に設けられた吐出口より、
アノード電極４１５と半導体基板４０１との間が鍍金液
で満たされるように流れ、最後は鍍金液タンク４１７に
戻る。Next, the plating processing function will be explained. After the pretreatment is completed, the anode electrode 415 is lowered from above to a predetermined position with a certain distance from the semiconductor substrate 401 by the operation of the cylinder 428 with respect to the semiconductor substrate 401 placed in the above state. Then, the pump 418 is activated, and the plating solution is pumped from the plating tank 417 through the pipe 414 and from the outlet provided at the center of the anode electrode 415.
The plating solution flows so as to fill the space between the anode electrode 415 and the semiconductor substrate 401, and finally returns to the plating solution tank 417.
アノード電極４１５と半導体基板４０１との間を、アノ
ード電ｉ４１５と半導体基板４０１に鍍金液が充分接し
かつ満たされるように流れると、鍍金用電源４３１が入
り、鍍金が開始される。電流は鍍金用電源４３１よりア
ノード電極４１５、鍍金液、半導体基板４０１、真空吸
着チャック４０２、シャフト４０３と流れ、スリップリ
ング４０５を介して鍍金用電源４３１に戻る。When the plating solution flows between the anode electrode 415 and the semiconductor substrate 401 so that the anode electrode i415 and the semiconductor substrate 401 are sufficiently contacted and filled, the plating power source 431 is turned on and plating is started. Current flows from the plating power source 431 to the anode electrode 415, the plating solution, the semiconductor substrate 401, the vacuum suction chuck 402, and the shaft 403, and returns to the plating power source 431 via the slip ring 405.
所定の時間電流を流して鍍金が終了すると、電流と鍍金
液の吐出が止まる。そこでシリンダ４０８を作動させて
、半導体基板４０１をスピン位置４０２に押し上げる。When the plating is completed after passing the current for a predetermined period of time, the current and the plating solution stop being discharged. The cylinder 408 is then actuated to push the semiconductor substrate 401 up to the spin position 402.
すると、スピンモータ４０７が回転してカップリング４
０６、シャフト４０３を介して真空吸着チャック４０２
を回転させ、半導体基板４０１上の鍍金液の滴を飛ばす
。その後の水洗乾燥処理は前処理機能で述べた通りであ
る。Then, the spin motor 407 rotates and the coupling 4
06, vacuum suction chuck 402 via shaft 403
is rotated to spray droplets of plating solution on the semiconductor substrate 401. The subsequent washing and drying process is as described in the pretreatment function.
この実施例では、一つのカップで鍍金前処理、鍍金処理
、水洗、乾燥を行うので装置を小型化できる利点がある
。In this embodiment, the plating pretreatment, plating treatment, washing, and drying are performed in one cup, so there is an advantage that the apparatus can be made smaller.
以上説明したように本発明は、半導体基板をカセットか
らカセットへと人手を介さずに鍍金前処理、鍍金処理、
水洗、乾燥を全自動で行うことにより、作業者がビンセ
ット等で半導体基板を扱うことがなくなり、半導体基板
にダメージを与えない。As explained above, the present invention enables plating pretreatment, plating treatment,
Fully automatic washing and drying eliminates the need for workers to handle the semiconductor substrates with a bottle set, thereby preventing damage to the semiconductor substrates.
また、前処理から乾燥まで全自動で処理を行うので作業
者の工数を大幅に省くことができ、鍍金用治具等に半導
体基板をセットするなどの作業を行う必要がないめで、
作業者が鍍金液の雰囲気にさらされることがなく、安全
性が高まる。In addition, since the process from pre-treatment to drying is fully automated, the number of man-hours required by the operator can be significantly reduced, and there is no need to perform tasks such as setting the semiconductor substrate in a plating jig, etc.
Workers are not exposed to the atmosphere of the plating solution, increasing safety.
更に、前処理、鍍金、水洗、乾燥と別々の装置で行って
いたのが、１台で行うことができるので省スペース化を
図ることができる。Furthermore, pretreatment, plating, washing, and drying, which were previously performed using separate devices, can now be performed with a single device, resulting in space savings.
図面の簡単な説明
第１図は本発明の第１の実施例の構成図、第２図はその
前処理部の概要図、第３図はその鍍金部の概要図、第４
図は本発明の第２の実施例の概要図、第５図は従来の浸
漬式の鍍金装置の概要図、第６図は従来の噴流式の鍍金
装置の概要図である。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram of the first embodiment of the present invention, Fig. 2 is a schematic diagram of its pretreatment section, Fig. 3 is a schematic diagram of its plating section, and Fig. 4 is a schematic diagram of its plating section.
FIG. 5 is a schematic diagram of a second embodiment of the present invention, FIG. 5 is a schematic diagram of a conventional immersion type plating apparatus, and FIG. 6 is a schematic diagram of a conventional jet type plating apparatus.
１０１・・・ローダ部、１０２・・・前処理部、１０３
・・・鍍金部、１０４・・・水洗乾燥部、１０５・・・
アンローダ部、２０１・・・半導体基板、２０２・・・
真空吸着チャック、２０３・・・シャフト、２０４・・
・真空軸受、２０５・・・カップリング、２０６・・・
スピンモータ、２０７・・・シリンダ、２０８・・・カ
ップ、２０９・・・純水用エアー弁、２１０・・・受渡
位置、２１１・・・排水切換弁、２１２・・・薬品タン
ク、２１３・・・ポンプ、２１４・・・薬品用エアー弁
、２１５・・・純水ノズル、２１６・・・薬品ノズル、
３０１・・・半導体基板、３０２・・・真空吸着チャッ
ク、３０３・・・シャフト、３０４・・・真空軸受、３
０５・・・カップリング、３゜６・・・スピンモータ、
３０７・・・鍍金液タンク、３０８・・・ポンプ、３０
９・・・アノード電極、３１０・・・スリップリング、
３１１・・・鍍金用電源、３１２・・・鍍金液、３１３
・・・カップ、３１４・・・シリンダ、３１５・・・シ
リンダ、４０１・・・半導体基板、４０２・・・真空吸
着チャック、４０３・・・シャフト、４０４・・・真空
軸受、４０５・・・スリップリング、４０６・・・カツ
プリング、４０７・・・スピンモータ、４０８・・・シ
リンダ、４０９・・・カップ、４１０・・・シール、４
１１・・・Ｏリング、４１２・・・スピン位置、４１３
・・・受渡位置、４１４・・・パイプ、４１５・・・ア
ノード電極、４１６・・・排水切換弁、４１７・・・鍍
金液タンク、４１８・・・ポンプ、４１９・・・鍍金液
エアー弁、４２０・・・シリンダ、４２１・・・排水切
換弁、４２２・・・薬品タンク、４２３・・・ポンプ、
４２４・・・薬品用エアー弁、４２５・・・シリンダ、
４２６・・・薬品ノズル、４２７・・・純水ノズル、４
２８・・・シリンダ、４２９・・・純水用エアー弁、４
３０・・・センタリング機構、４３１・・・鍍金用電源
、５０１・・・鍍金槽、５０２・・・半導体基板固定治
具、５０３・・・半導体基板、５０４・・・アノード電
極、５０５・・・鍍金用電源、６０１・・・噴流カップ
、６０２・・・半導体基板、６０３・・・カソード電極
、６０４・・・鍍金用電源、６０５・・・噴流ポンプ、
６０６・・・アノード電極。101...Loader section, 102...Preprocessing section, 103
...Plating section, 104... Washing and drying section, 105...
Unloader section, 201... semiconductor substrate, 202...
Vacuum suction chuck, 203...Shaft, 204...
・Vacuum bearing, 205... Coupling, 206...
Spin motor, 207... Cylinder, 208... Cup, 209... Air valve for pure water, 210... Delivery position, 211... Drainage switching valve, 212... Chemical tank, 213...・Pump, 214... air valve for chemicals, 215... pure water nozzle, 216... chemical nozzle,
301... Semiconductor substrate, 302... Vacuum suction chuck, 303... Shaft, 304... Vacuum bearing, 3
05...Coupling, 3゜6...Spin motor,
307... Plating liquid tank, 308... Pump, 30
9... Anode electrode, 310... Slip ring,
311...Power supply for plating, 312...Plating liquid, 313
... Cup, 314 ... Cylinder, 315 ... Cylinder, 401 ... Semiconductor substrate, 402 ... Vacuum suction chuck, 403 ... Shaft, 404 ... Vacuum bearing, 405 ... Slip Ring, 406...Cup ring, 407...Spin motor, 408...Cylinder, 409...Cup, 410...Seal, 4
11...O ring, 412...Spin position, 413
...Delivery position, 414...Pipe, 415...Anode electrode, 416...Drainage switching valve, 417...Plating liquid tank, 418...Pump, 419...Plating liquid air valve, 420... Cylinder, 421... Drain switching valve, 422... Chemical tank, 423... Pump,
424...Air valve for chemicals, 425...Cylinder,
426... Chemical nozzle, 427... Pure water nozzle, 4
28...Cylinder, 429...Pure water air valve, 4
30... Centering mechanism, 431... Power source for plating, 501... Plating tank, 502... Semiconductor substrate fixing jig, 503... Semiconductor substrate, 504... Anode electrode, 505... Plating power source, 601... Jet cup, 602... Semiconductor substrate, 603... Cathode electrode, 604... Plating power source, 605... Jet pump,
606...Anode electrode.
Claims (1)
体基板鍍金装置において、半導体基板をローダ部からア
ンローダ部へと枚葉で搬送する間に、鍍金前処理、鍍金
処理、水洗乾燥処理、を行う処理部を設けたことを特徴
とする半導体基板鍍金装置。 ２、鍍金前処理、鍍金処理、水洗乾燥処理の各処理の際
、配線やバンプを形成する表面を上にして半導体基板を
水平に保持する真空吸着チャックを有する請求項１記載
の半導体基板鍍金装置。 ３、鍍金処理の際、半導体基板表面を上にして保持する
アノード電極を兼ねた真空吸着チャックと、この真空吸
着チャックの上方に半導体基板と対向して配置された鍍
金液吐出口を有するカソード電極と、この対向配置され
たカソード電極と半導体基板間を吐出口からの鍍金液で
満たすために対向距離を調節する両電極の上下機構とを
有する請求項１及び２記載の半導体基板鍍金装置。[Claims] 1. In a semiconductor substrate plating apparatus that forms wiring and bumps on a semiconductor substrate by plating, pre-plating treatment and plating treatment are carried out while the semiconductor substrate is being conveyed piece by piece from the loader section to the unloader section. 1. A semiconductor substrate plating apparatus comprising a processing section for performing washing and drying processing. 2. The semiconductor substrate plating apparatus according to claim 1, further comprising a vacuum suction chuck that holds the semiconductor substrate horizontally with the surface on which wiring and bumps are formed facing upward during each of the pre-plating treatment, plating treatment, and washing and drying treatment. . 3. A vacuum suction chuck that also serves as an anode electrode to hold the semiconductor substrate with its surface facing up during plating processing, and a cathode electrode having a plating solution discharge port placed above the vacuum suction chuck and facing the semiconductor substrate. 3. The semiconductor substrate plating apparatus according to claim 1, further comprising a vertical mechanism for adjusting the facing distance between the cathode electrode and the semiconductor substrate, which are arranged facing each other, to fill the space between the cathode electrode and the semiconductor substrate with the plating liquid from the discharge port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1129156A JPH0781197B2 (en) | 1989-05-22 | 1989-05-22 | Semiconductor substrate plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1129156A JPH0781197B2 (en) | 1989-05-22 | 1989-05-22 | Semiconductor substrate plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02310393A true JPH02310393A (en) | 1990-12-26 |
| JPH0781197B2 JPH0781197B2 (en) | 1995-08-30 |
Family
ID=15002528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1129156A Expired - Fee Related JPH0781197B2 (en) | 1989-05-22 | 1989-05-22 | Semiconductor substrate plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0781197B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428897A (en) * | 1990-05-25 | 1992-01-31 | Shimada Phys & Chem Ind Co Ltd | Wafer treating equipment |
| US5441629A (en) * | 1993-03-30 | 1995-08-15 | Mitsubishi Denki Kabushiki Kaisha | Apparatus and method of electroplating |
| WO1999045170A1 (en) * | 1998-03-02 | 1999-09-10 | Ebara Corporation | Substrate plating device |
| EP1067221A2 (en) * | 1999-07-08 | 2001-01-10 | Ebara Corporation | Method and apparatus for plating substrate and plating facility |
| KR20010107766A (en) * | 2000-05-26 | 2001-12-07 | 마에다 시게루 | Substrate processing apparatus and substrate plating apparatus |
| US6858084B2 (en) | 2000-10-26 | 2005-02-22 | Ebara Corporation | Plating apparatus and method |
| JP2006328470A (en) * | 2005-05-25 | 2006-12-07 | Tousetsu:Kk | Electroplating apparatus |
| JP2008024962A (en) * | 2006-07-18 | 2008-02-07 | Tousetsu:Kk | Electroplating device |
| KR20150140226A (en) * | 2014-06-05 | 2015-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ald |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007525595A (en) * | 2004-02-04 | 2007-09-06 | サーフェクト テクノロジーズ インク． | Plating apparatus and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5383936A (en) * | 1976-12-29 | 1978-07-24 | Tanaka Electronics Ind | Automatic plating device |
| JPS5845399A (en) * | 1981-09-10 | 1983-03-16 | Electroplating Eng Of Japan Co | Plating device |
| JPS62133100A (en) * | 1985-12-03 | 1987-06-16 | Nec Corp | Metal plating apparatus |
-
1989
- 1989-05-22 JP JP1129156A patent/JPH0781197B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5383936A (en) * | 1976-12-29 | 1978-07-24 | Tanaka Electronics Ind | Automatic plating device |
| JPS5845399A (en) * | 1981-09-10 | 1983-03-16 | Electroplating Eng Of Japan Co | Plating device |
| JPS62133100A (en) * | 1985-12-03 | 1987-06-16 | Nec Corp | Metal plating apparatus |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428897A (en) * | 1990-05-25 | 1992-01-31 | Shimada Phys & Chem Ind Co Ltd | Wafer treating equipment |
| US5441629A (en) * | 1993-03-30 | 1995-08-15 | Mitsubishi Denki Kabushiki Kaisha | Apparatus and method of electroplating |
| WO1999045170A1 (en) * | 1998-03-02 | 1999-09-10 | Ebara Corporation | Substrate plating device |
| US6582580B1 (en) | 1998-03-02 | 2003-06-24 | Ebara Corporation | Substrate plating apparatus |
| EP1067221A2 (en) * | 1999-07-08 | 2001-01-10 | Ebara Corporation | Method and apparatus for plating substrate and plating facility |
| EP1067221A3 (en) * | 1999-07-08 | 2004-09-08 | Ebara Corporation | Method and apparatus for plating substrate and plating facility |
| KR20010107766A (en) * | 2000-05-26 | 2001-12-07 | 마에다 시게루 | Substrate processing apparatus and substrate plating apparatus |
| US6858084B2 (en) | 2000-10-26 | 2005-02-22 | Ebara Corporation | Plating apparatus and method |
| JP2006328470A (en) * | 2005-05-25 | 2006-12-07 | Tousetsu:Kk | Electroplating apparatus |
| JP2008024962A (en) * | 2006-07-18 | 2008-02-07 | Tousetsu:Kk | Electroplating device |
| KR20150140226A (en) * | 2014-06-05 | 2015-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ald |
| KR20170090391A (en) * | 2014-06-05 | 2017-08-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ald |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0781197B2 (en) | 1995-08-30 |
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