JP2006328470A - Electroplating apparatus - Google Patents

Electroplating apparatus Download PDF

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JP2006328470A
JP2006328470A JP2005152750A JP2005152750A JP2006328470A JP 2006328470 A JP2006328470 A JP 2006328470A JP 2005152750 A JP2005152750 A JP 2005152750A JP 2005152750 A JP2005152750 A JP 2005152750A JP 2006328470 A JP2006328470 A JP 2006328470A
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cathode
holder
plating
plated
wafer
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Atsushi Nagashima
敦 永島
Hiroshi Oshibe
弘 押部
Tsunemasa Wachi
常政 和智
Masayuki Fujino
真之 藤野
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TOUSETSU KK
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TOUSETSU KK
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electroplating apparatus capable of completely discharging/draining a plating solution in a plating bath, effectively using the whole surface of a wafer and always supplying a fresh plating solution onto the surface of the wafer. <P>SOLUTION: The electroplating apparatus is provided with the plating bath 11 storing the plating solution M, an annular cathode auxiliary electrode holder 12 attached to a through hole of the bottom part 11b of the plating bath, a holder 13 for a material W to be plated which is detachably attached to the cathode auxiliary electrode holder and has a placing part 13c for the material to be plated on the upper surface, a cathode 15 provided on the upper side of the holder for the material to be plated and being in contact with the lower surface of the material to be plated on the placing part, positioning means 12d, 13d for the holder for the material to be plated, a paddle 23 moving back and forth on the wafer and an anode opposed to the cathode with a certain interval. The upper surface of the wafer and each surface of a cathode auxiliary electrode, the cathode auxiliary electrode holder and the bottom 17c, 12c, 11c are positioned on the same plane and then the plating solution is completely discharged and drained when the plating solution is discharged from the bottom of the plating bath after finishing of the plating. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は、電子部品用の基板、IC用のウエハ、薄膜磁気ヘッド用のウエハ等の電気めっき装置に関するものである。   The present invention relates to an electroplating apparatus for a substrate for electronic parts, a wafer for IC, a wafer for thin film magnetic head, and the like.

従来、ウエハ上に薄膜を成膜させる装置として、電気めっき装置が用いられている。   Conventionally, an electroplating apparatus is used as an apparatus for forming a thin film on a wafer.

この電気めっき装置では、めっき膜を形成したい部分に導電性の下地膜を設け、この下地膜を陰極としてめっき液中で通電することにより、下地膜上にめっき膜を析出させている。   In this electroplating apparatus, a conductive base film is provided in a portion where a plating film is to be formed, and the plating film is deposited on the base film by energizing the base film as a cathode in a plating solution.

従来の電気めっき装置として、次のものが知られている(例えば、特許文献1、参照)。即ち、
図8に示すように、めっき槽1の底部1bの貫通穴に装着された、環状の陰極ホルダ2と、該陰極ホルダ2に挿入されるウエハホルダ3と、該陰極ホルダ2に設けられ、ウエハホルダ3に載置されたウエハWの上面に当接する環状の陰極(カソード)5と、該陰極5の上に絶縁体6を介して設けられた環状の陰極補助電極7と、めっき槽1内に前記陰極5と対向して設けられている図示しない陽極(アノード)と、パドル摺動アームに設けられ、ウエハWの上面近傍を摺動するパドル9と、を備えている。
The following are known as conventional electroplating apparatuses (for example, see Patent Document 1). That is,
As shown in FIG. 8, an annular cathode holder 2 mounted in a through hole in the bottom 1 b of the plating tank 1, a wafer holder 3 inserted into the cathode holder 2, and provided on the cathode holder 2, the wafer holder 3 An annular cathode (cathode) 5 in contact with the upper surface of the wafer W placed on the substrate, an annular cathode auxiliary electrode 7 provided on the cathode 5 via an insulator 6, An unillustrated anode (anode) provided facing the cathode 5 and a paddle 9 provided on the paddle sliding arm and sliding near the upper surface of the wafer W are provided.

なお、図8において、10aはウエハホルダ3を上下動させる昇降シリンダ、10bは真空吸着ライン、10cは陰極電源のコード、をそれぞれ示す。   In FIG. 8, reference numeral 10a denotes an elevating cylinder for moving the wafer holder 3 up and down, 10b denotes a vacuum suction line, and 10c denotes a cathode power supply cord.

この電気めっき装置は、ウエハWのめっき面を上にしてめっきする装置であり、陰極(カソード)5とウエハ(基板)Wの上面の外周をコンタクトすることによりめっきしている。前記両者5、Wをコンタクトさせる場合には、円板状のウエハWをウエハホルダ3上に置き、昇降シリンダ10aにより押し上げ、強制的に陰極5をウエハWの上面外周に押しつける。
特開平10−330987
This electroplating apparatus is an apparatus for plating with the plating surface of the wafer W facing up, and plating is performed by contacting the outer periphery of the upper surface of the cathode (cathode) 5 and the wafer (substrate) W. In order to contact the both 5 and W, the disk-shaped wafer W is placed on the wafer holder 3 and pushed up by the elevating cylinder 10a to forcibly press the cathode 5 against the outer periphery of the upper surface of the wafer W.
JP-A-10-330987

従来例には、次のような問題がある。   The conventional example has the following problems.

(1)ウエハ処理後、自動弁を開き、めっき槽1内のめっき液をドレーン配管内に排出するが、ウエハW上面とめっき槽1の底部1bとの間には、段差D、例えば、4〜5mmの段差、が発生しているため、めっき槽の底部1bには、必ずめっき液が残ってしまう。この残留めっき液の量は、例えば、ウエハの直径150mmの場合には、70cc〜90cc、と多量である。   (1) After the wafer processing, the automatic valve is opened and the plating solution in the plating tank 1 is discharged into the drain pipe, but there is a step D between the upper surface of the wafer W and the bottom 1b of the plating tank 1, for example, 4 Since a step of ˜5 mm is generated, the plating solution always remains at the bottom 1b of the plating tank. For example, when the wafer diameter is 150 mm, the amount of the residual plating solution is as large as 70 cc to 90 cc.

そのため、ドレーン排出後、昇降シリンダ15aを下降させると、前記残留液がこぼれドレーンとして外部に放出されてしまうので、めっき液の損失のみならず、無害化して外部に排出させなければならないので、環境維持のためにコストが嵩んでしまう。   Therefore, if the lifting cylinder 15a is lowered after draining, the residual liquid will be discharged to the outside as a spilled drain, so not only the loss of the plating solution but also the harmlessness must be discharged to the outside. Cost increases for maintenance.

(2)ウエハWのめっき面の外周部と円環状の陰極5とがコンタクトしているので、コンタクトしている部分に成膜することができない。従って、ウエハWの全面を有効に利用することができない。ウエハWのコンタクトしている部分は、例えば、約4mm程度であるので、直径150mmのウエハの場合の有効面積は、約90%、直径100mmのウエハの場合のそれは85%、となるので歩留まりが良くない。   (2) Since the outer peripheral portion of the plating surface of the wafer W and the annular cathode 5 are in contact with each other, no film can be formed on the contacted portion. Therefore, the entire surface of the wafer W cannot be used effectively. Since the contact portion of the wafer W is, for example, about 4 mm, the effective area in the case of a wafer having a diameter of 150 mm is about 90%, and that in the case of a wafer having a diameter of 100 mm is 85%. Not good.

(3)液溜まりがあるので、パドル9を摺動させてもウエハ外周部のめっき液は、スムーズに流れない。そのため、膜厚を均一に成膜することができない。   (3) Since there is a liquid pool, the plating solution on the outer periphery of the wafer does not flow smoothly even if the paddle 9 is slid. Therefore, the film thickness cannot be uniformly formed.

(4)常に新鮮なめっき液をウエハ表面に供給するため、パドルをできるだけウエハ表面に近づけたいが、段差D以内には近づくことはできない。例えば、パドル9と陰極補助電極7上面との間隔は、約1mm、段差Dは約4mm、であり、ウエハWとパドル9との間隔は5mmとなってしまい、それ以上近づけることは不可能である。   (4) Since a fresh plating solution is always supplied to the wafer surface, the paddle is desired to be as close to the wafer surface as possible, but cannot be within the step D. For example, the distance between the paddle 9 and the upper surface of the cathode auxiliary electrode 7 is about 1 mm, the step D is about 4 mm, and the distance between the wafer W and the paddle 9 is 5 mm, which cannot be made any closer. is there.

この発明は、上記事情に鑑み、めっき槽内のめっき液を完全にドレーン排出できるようにすることを目的とする。他の目的は、ウエハの全面を有効利用すると共に、均一な膜厚を得ることである。更に他の目的は、常に新鮮なめっき液をウエハ表面に供給できるようにすることである。   In view of the above circumstances, an object of the present invention is to make it possible to completely drain the plating solution in the plating tank. Another object is to effectively use the entire surface of the wafer and to obtain a uniform film thickness. Yet another object is to always be able to supply fresh plating solution to the wafer surface.

この発明は、めっき液を収納するめっき槽と、該めっき槽の底部の貫通穴に装着された、環状の陰極補助電極ホルダと、該陰極補助電極ホルダに着脱自在に挿着され、その上面に被めっき物の載置部を有する被めっき物ホルダと、該被めっき物ホルダの上面側に設けられ、前記載置部上の被めっき物の下面に当接する陰極と、該被めっき物ホルダの固定位置を規制する位置決め手段と、前記めっき槽内に設けられ、前記陰極と間隔を置いて対向する陽極と、を備えていることを特徴とする。   The present invention includes a plating tank for storing a plating solution, an annular cathode auxiliary electrode holder mounted in a through-hole at the bottom of the plating tank, and a cathode auxiliary electrode holder that is detachably attached to the upper surface of the cathode auxiliary electrode holder. A plated object holder having a placement part for the plated object, a cathode provided on the upper surface side of the plated object holder and contacting the lower surface of the plated object on the placing part, and the plated object holder It is characterized by comprising positioning means for restricting the fixed position, and an anode provided in the plating tank and facing the cathode at a distance.

この発明は、めっき液を収納するめっき槽と、該めっき槽の底部の貫通穴に装着された、環状の陰極補助電極ホルダと、陰極補助電極ホルダの上面に設けられた環状の陰極補助電極と、該陰極補助電極ホルダに着脱自在に挿入され、その上面に被めっき物の載置部を有する被めっき物ホルダと、該被めっき物ホルダの上面側に設けられ、前記載置部上の被めっき物の下面に当接する陰極と、被めっき物ホルダに設けられた真空吸着手段と、該被めっき物ホルダの固定位置を規制する位置決め手段と、前記めっき槽内に設けられ、前記陰極と間隔を置いて対向する陽極と、前記めっき槽の底部側に、摺動自在に設けられたパドルと、を備えていることを特徴とする。   The present invention includes a plating tank for storing a plating solution, an annular cathode auxiliary electrode holder mounted in a through hole at the bottom of the plating tank, and an annular cathode auxiliary electrode provided on the upper surface of the cathode auxiliary electrode holder. A plating object holder that is detachably inserted into the cathode auxiliary electrode holder and has a placement part for the object to be plated on the upper surface thereof, and is provided on the upper surface side of the plating object holder. A cathode in contact with the lower surface of the plated object; a vacuum suction means provided on the object holder; a positioning means for regulating a fixing position of the object holder; and a space provided between the cathode and the cathode. And a paddle slidably provided on the bottom side of the plating tank.

この発明は、陰極がコンタクトリングを介して被めっき物の下面に当接することを特徴とする。この発明の被めっき物ホルダの載置部には、ウエハが載置され、該ウエハのめっき面と陰極補助電極ホルダの上面とが同一平面上に位置していることを特徴とする。この発明の前記位置決め手段は、陰極ホルダの内周面に設けた係止部と、被めっき物ホルダの外周面に設けられ、前記係止部と係合する係合部と、からなることを特徴とする。この発明は陰極補助電極ホルダが、被めっき物のめっき面を押さえる押え爪を備えていることを特徴とする。   The present invention is characterized in that the cathode contacts the lower surface of the object to be plated through the contact ring. A wafer is placed on the placing portion of the object holder of the present invention, and the plating surface of the wafer and the upper surface of the cathode auxiliary electrode holder are located on the same plane. The positioning means of the present invention comprises an engaging portion provided on the inner peripheral surface of the cathode holder, and an engaging portion provided on the outer peripheral surface of the workpiece holder and engaged with the engaging portion. Features. The present invention is characterized in that the cathode auxiliary electrode holder includes a presser claw for pressing the plating surface of the object to be plated.

この発明は、被めっき物のホルダの固定位置を規制する位置決め手段を設けているので、被めっき物のめっき面とめっき槽の底面とを同一平面上に位置せしめることができる。そのため、めっき槽底部に従来例の様な段差が発生しないので、所謂液溜まりが発生しない。従って、めっき終了毎に、ドレーン排液を行う場合、めっき槽内のめっき液を全部循環タンクに回収することができる。   Since this invention is provided with the positioning means which regulates the fixing position of the holder of a to-be-plated object, the plating surface of a to-be-plated object and the bottom face of a plating tank can be located on the same plane. For this reason, a step difference as in the conventional example does not occur at the bottom of the plating tank, and so-called liquid pool does not occur. Therefore, when drain draining is performed every time plating is completed, the entire plating solution in the plating tank can be collected in the circulation tank.

陰極が被めっき物の下面側に設けられているので、めっき面上には障害物が存在しない。そのため、被めっき物、例えば、ウエハ、をめっきする場合には、ウエハ全面を有効に使用することができる。又、パドルを可能な限りめっき面に近づけることができるので、新鮮なめっき液を常に供給することができる。   Since the cathode is provided on the lower surface side of the object to be plated, there is no obstacle on the plating surface. Therefore, when plating an object to be plated, for example, a wafer, the entire surface of the wafer can be used effectively. Further, since the paddle can be brought as close to the plating surface as possible, a fresh plating solution can always be supplied.

押え爪を設けたので、例えば、真空吸着ラインの真空ポンプが故障し、真空切れが発生しても、被めっき物を確実に固定しておくことができる。なお、この爪は、周方向に間隔をあけて複数設けているので、めっき面と押え爪との接触面積もごく僅かである。そのため、殆ど歩留まりに影響することはない。   Since the presser claw is provided, for example, even if the vacuum pump of the vacuum suction line fails and a vacuum break occurs, the object to be plated can be securely fixed. In addition, since this nail | claw is provided with two or more intervals in the circumferential direction, the contact area of a plating surface and a press nail | claw is also very small. Therefore, it hardly affects the yield.

この発明の第1実施の形態を図1〜図4により説明する。   A first embodiment of the present invention will be described with reference to FIGS.

電気めっき装置は、箱状のめっき槽11を備えており、該めっき槽11の底部11bの中央部には、貫通穴が設けられ、該貫通穴には筒状の陰極補助電極ホルダ12が挿着されている。   The electroplating apparatus includes a box-shaped plating tank 11. A through hole is provided at the center of the bottom 11 b of the plating tank 11, and a cylindrical cathode auxiliary electrode holder 12 is inserted into the through hole. It is worn.

この陰極補助電極ホルダ12の上面12cには、電極収納凹部が設けられ、該凹部には環状の陰極補助電極17が嵌着されている。この陰極補助電極17は、ウエハW外周部hの電流の集中を防ぐものであり、この電極17により膜厚の不均一を防止することができる。   An electrode housing recess is provided on the upper surface 12c of the cathode auxiliary electrode holder 12, and an annular cathode auxiliary electrode 17 is fitted in the recess. The cathode auxiliary electrode 17 prevents concentration of current on the outer peripheral portion h of the wafer W, and the electrode 17 can prevent unevenness of the film thickness.

更に述べると、陽極19と陰極15は、所定距離をおいて対向しているので、陰極15の中央と端部とでは電流密度が異なってしまい、陰極15表面の電流密度分布が不均一になる。しかし、陰極15を取り囲む様に陰極補助電極17を設けると、陰極15上の電流密度分布が均一になり、均一な膜厚にすることができる。   More specifically, since the anode 19 and the cathode 15 are opposed to each other with a predetermined distance, the current density is different between the center and the end of the cathode 15 and the current density distribution on the surface of the cathode 15 becomes non-uniform. . However, when the auxiliary cathode electrode 17 is provided so as to surround the cathode 15, the current density distribution on the cathode 15 becomes uniform, and the film thickness can be made uniform.

この電極17は、コード17aを介して陰極補助電極電源に連結されている。この電極17の上面17cと、底部11bの上面11c及び前記ホルダ12の上面12cは、それぞれ同一平面上に位置している。前記ホルダ12の内周面の上部には、係止手段となる段部12dが形成されている。   The electrode 17 is connected to a cathode auxiliary electrode power source via a cord 17a. The upper surface 17c of the electrode 17, the upper surface 11c of the bottom 11b, and the upper surface 12c of the holder 12 are located on the same plane. A step portion 12 d serving as a locking means is formed on the upper portion of the inner peripheral surface of the holder 12.

前記ホルダ12には、被めっき物ホルダ13が挿着されている。このホルダ13の上面13cは、平面状の載置部をなしており、その外周面の上部には、係合手段となる段部13dが形成されている。この段部13dは、前記段部12dと係合する。   A workpiece holder 13 is inserted into the holder 12. The upper surface 13c of the holder 13 forms a flat mounting portion, and a step portion 13d serving as an engaging means is formed on the upper portion of the outer peripheral surface. The step portion 13d is engaged with the step portion 12d.

前記上面13cには、電極収納凹部16と複数のシール溝13eと吸引孔13fとが形成されている。前記陰極収納凹部16は、内側溝16aと外側切り欠き部16bとを備えており、該外側切り欠き部16bは外周縁側に形成されている。内側溝16aには、陰極15に嵌着されているが、この陰極15の頂部は上面13の下方に位置している。前記陰極15はコード15aを介して陰極電源に接続されている。
ぜn
前記陰極15には、コンタクトリング36の水平固定部36aが押さえボルト37により固定されているが、このボルト37の頭部は前記上面13cより下方に位置している。コンタクトリング36の水平固定部36aは傾斜連結部36Bを介して水平当接部36cに連結されている。
The upper surface 13c is formed with an electrode housing recess 16, a plurality of seal grooves 13e, and a suction hole 13f. The cathode housing recess 16 includes an inner groove 16a and an outer notch 16b, and the outer notch 16b is formed on the outer peripheral side. The inner groove 16 a is fitted to the cathode 15, and the top of the cathode 15 is located below the upper surface 13. The cathode 15 is connected to a cathode power source via a cord 15a.
N
A horizontal fixing portion 36a of a contact ring 36 is fixed to the cathode 15 by a holding bolt 37. The head of the bolt 37 is located below the upper surface 13c. The horizontal fixing portion 36a of the contact ring 36 is connected to the horizontal abutting portion 36c through an inclined connecting portion 36B.

外側切欠き部16bには、弾性部材、例えば、ゴム38が嵌着されている。このゴム38は断面長方形状に形成され、その上面38aには前記コンタクトリング36の当接部36cが圧接されている。該当接部36cはウエハWの外周部下面により押圧される。   An elastic member, for example, rubber 38 is fitted into the outer notch 16b. The rubber 38 is formed in a rectangular shape in cross section, and the contact portion 36c of the contact ring 36 is pressed against the upper surface 38a. The contact portion 36c is pressed by the lower surface of the outer peripheral portion of the wafer W.

前記シール溝13eには、シール材、例えば、ゴム製Oリング40、が嵌着されている。前記吸引孔13fは、真空吸着ライン32に連続している。このホルダ13は、昇降シリンダ25に固定されている。   A sealing material such as a rubber O-ring 40 is fitted in the sealing groove 13e. The suction hole 13 f is continuous with the vacuum suction line 32. The holder 13 is fixed to the elevating cylinder 25.

めっき槽11内には、パドル23が摺動自在に設けられている。このパドル23は、パドル摺動アーム21に設けられているが、常に新鮮なめっき液を流すため、できるだけウエハWに近づけて往復運させる。   A paddle 23 is slidably provided in the plating tank 11. The paddle 23 is provided on the paddle sliding arm 21. The paddle 23 is reciprocated as close to the wafer W as possible in order to always flow a fresh plating solution.

なお、図4において、27はめっき槽11内のめっき液Mを図示しない循環タンクへ戻すためのドレーン配管、28はドレーン配管27に設けられた自動弁、29はオーバーフローした、めっき液を前記循環タンクに戻すオーバーフロー部、30は前記循環タンクからめっき液が供給されるめっき液循環供給部、をそれぞれ示す。   In FIG. 4, 27 is a drain pipe for returning the plating solution M in the plating tank 11 to a circulation tank (not shown), 28 is an automatic valve provided in the drain pipe 27, 29 is overflowed, and the plating solution is circulated. The overflow part 30 which returns to a tank and 30 respectively show the plating solution circulation supply part to which a plating solution is supplied from the said circulation tank.

次に、本実施の形態の作動について説明する。   Next, the operation of the present embodiment will be described.

被めっき物、例えば、ウエハW、を載置部13cに載置し、コンタクトリング36の当接部36cをウエハWの下面の外周部にコンタクトさせた後、真空吸着ライン32を駆動させると、ウエハWは載置部13cに吸着固定される。このとき、当接部36cの上面と前記ホルダ13の上面13cは同一平面状に位置し、ウエハWは水平状態になる。   When an object to be plated, for example, a wafer W, is placed on the placement portion 13c, the contact portion 36c of the contact ring 36 is brought into contact with the outer peripheral portion of the lower surface of the wafer W, and then the vacuum suction line 32 is driven. The wafer W is attracted and fixed to the mounting portion 13c. At this time, the upper surface of the contact portion 36c and the upper surface 13c of the holder 13 are positioned on the same plane, and the wafer W is in a horizontal state.

昇降シリンダ25を駆動させ、被めっき物ホルダ13を陰極補助電極ホルダ12に挿入すると、前記ホルダ13の段部13dが前記ホルダ12の段部12dに係合し、それ以上摺動できなくなる。この時のウエハWの上面と、前記陰極補助電極17、前記陰極補助電極ホルダ12,底部11bの各上面17c、12c、11cは、同一平面上に位置している。   When the elevating cylinder 25 is driven and the workpiece holder 13 is inserted into the cathode auxiliary electrode holder 12, the step 13d of the holder 13 engages with the step 12d of the holder 12 and cannot slide any further. At this time, the upper surface of the wafer W and the upper surfaces 17c, 12c, and 11c of the auxiliary cathode electrode 17, the auxiliary cathode electrode holder 12, and the bottom portion 11b are located on the same plane.

この状態において、めっき液槽11にめっき液Mを供給すると共に、陰極15、陽極19、陰極補助電極17に給電するとともに、パドル23を摺動させて新鮮なめっき液MをウエハWのめっき面に供給し、めっきする。この時、ウエハWの上面には、障害物が存在しないので、パドル23は、該ウエハWの上面近傍、例えば、ウエハWから上方に約1mm以上離れた位置で摺動し、常に新鮮なめっき液をウエハWのめっき面に供給することができる。   In this state, the plating solution M is supplied to the plating solution tank 11, and the cathode 15, the anode 19, and the cathode auxiliary electrode 17 are supplied with power, and the paddle 23 is slid to remove the fresh plating solution M from the plating surface of the wafer W. And plating. At this time, since there are no obstacles on the upper surface of the wafer W, the paddle 23 slides in the vicinity of the upper surface of the wafer W, for example, at a position about 1 mm or more upward from the wafer W, so that the plating is always fresh. The liquid can be supplied to the plating surface of the wafer W.

なお、コンタクトリング36がウエハWの外周側に位置しているので、ウエハ表面のめっき面への通電性が良好となる。また、ゴム37が設けられているので、コンタクトリング36の当接部36cが上面13cより少し高くなっても弾性変形によりその高さを調整することができる。   In addition, since the contact ring 36 is located on the outer peripheral side of the wafer W, the electrical conductivity to the plated surface of the wafer surface is good. Further, since the rubber 37 is provided, even if the contact portion 36c of the contact ring 36 is slightly higher than the upper surface 13c, the height can be adjusted by elastic deformation.

ウエハめっき終了後、自動弁28を開き、めっき槽11内のめっき液Mをドレーン配管27を介して図示しない循環タンク内に流し込む。この時、前記ホルダ13、12、底部11bの各上面12c、13c、11cが同一平面上に位置しているので、めっき槽11内のめっき液Mは、全て完全にドレーン排出され、循環タンクに回収される。   After the wafer plating is completed, the automatic valve 28 is opened, and the plating solution M in the plating tank 11 is poured into a circulation tank (not shown) through the drain pipe 27. At this time, the upper surfaces 12c, 13c and 11c of the holders 13 and 12 and the bottom portion 11b are located on the same plane, so that the plating solution M in the plating tank 11 is completely drained and discharged to the circulation tank. Collected.

そのため、昇降シリンダ25を作動させ、前記被めっき物ホルダ13を下降させても、めっき槽11の底部11bには、液だまりが存在していないので、めっき液Mが外部に放出されることはない。又、従来例と異なり、ウエハのめっき面は、陰極等により押さえられていないので、全面を有効に利用することができる。   Therefore, even if the elevating cylinder 25 is operated and the object holder 13 is lowered, there is no liquid pool in the bottom 11b of the plating tank 11, so that the plating solution M is discharged to the outside. Absent. Further, unlike the conventional example, the plated surface of the wafer is not pressed by the cathode or the like, so that the entire surface can be used effectively.

この発明の第2実施の形態を図5により説明するが、図1〜図4と同一図面符号はその名称も機能も同一である。   A second embodiment of the present invention will be described with reference to FIG. 5. The same reference numerals as those in FIGS. 1 to 4 have the same names and functions.

この実施の形態と前記実施の形態との相違点は、コンタクトリングを省略し、陰極15とウエハWとを直接当接させたことである。   The difference between this embodiment and the previous embodiment is that the contact ring is omitted and the cathode 15 and the wafer W are brought into direct contact with each other.

この発明の第3実施の形態を図6,図7により説明するが、図1〜図4と同一図面符号はその名称も機能も同一である。   A third embodiment of the present invention will be described with reference to FIGS. 6 and 7. The same reference numerals as those in FIGS. 1 to 4 have the same names and functions.

この実施の形態と前記実施の形態との相違点は、陰極補助電極ホルダ12に、ウエハのめっき面(上面)を押さえる押え爪35を設けたことである。この押え爪35は、図7に示す様に、周方向に等間隔を空けて4個設けられており、ウエハWの外周端近傍に当接している。この押え爪35の数、大きさ、配置等は必要に応じて適宜選択することができる。   The difference between this embodiment and the above-described embodiment is that the cathode auxiliary electrode holder 12 is provided with a presser claw 35 for pressing the plating surface (upper surface) of the wafer. As shown in FIG. 7, four presser claws 35 are provided at equal intervals in the circumferential direction and are in contact with the vicinity of the outer peripheral edge of the wafer W. The number, size, arrangement, and the like of the presser claws 35 can be appropriately selected as necessary.

この押え爪35は、数が少なく、且つ、ウエハとの接触面積も少ないので、殆ど歩留まりに影響を与えることはない。この押え爪35を備えることにより、真空吸着ライン32が故障しても、確実にウエハの固定状態を維持することができる。   Since the number of the press claws 35 is small and the contact area with the wafer is also small, the yield is hardly affected. By providing this presser claw 35, even if the vacuum suction line 32 breaks down, the wafer can be securely fixed.

本発明の第1実施の形態を示す断面図で、図2のI―I線の要部拡大断面図であるFIG. 3 is a cross-sectional view showing the first embodiment of the present invention, and is an enlarged cross-sectional view of a main part taken along line II of FIG. 電気めっき装置の平面図である。It is a top view of an electroplating apparatus. 図1の要部拡大断面図である。It is a principal part expanded sectional view of FIG. 電気めっき装置の、一部を断面にした正面図である。It is the front view which made the cross section part of the electroplating apparatus. 本発明の第2実施の形態を示す要部拡大断面図である。It is a principal part expanded sectional view which shows 2nd Embodiment of this invention. 本発明の第3実施の形態を示す縦断面図であり、図1に対応する図である。It is a longitudinal cross-sectional view which shows 3rd Embodiment of this invention, and is a figure corresponding to FIG. 電気めっき装置の平面図である。It is a top view of an electroplating apparatus. 従来例を示す拡大断面図である。It is an expanded sectional view which shows a prior art example.

符号の説明Explanation of symbols

11 めっき槽
11b 底部
11c 上面
12 陰極補助電極ホルダ
12c 上面
12d 段部
13 被めっき物ホルダ
13c 上面
13d 段部
15 陰極
17 陰極補助電極
19 陽極
23 パドル
35 押え爪
DESCRIPTION OF SYMBOLS 11 Plating tank 11b Bottom part 11c Upper surface 12 Cathode auxiliary electrode holder 12c Upper surface 12d Step part 13 To-be-plated object holder 13c Upper surface 13d Step part 15 Cathode 17 Cathode auxiliary electrode 19 Anode 23 Paddle 35 Pressing nail

Claims (6)

めっき液を収納するめっき槽と、
該めっき槽の底部の貫通穴に嵌着された、環状の陰極補助電極ホルダと、
該陰極補助電極ホルダに摺動自在に挿着され、その上面に被めっき物の載置部を有する被めっき物ホルダと、
該被めっき物ホルダの上面側に設けられ、前記載置部上の被めっき物の下面に当接する陰極と、
該被めっき物ホルダの固定位置を規制する位置決め手段と、
前記めっき槽内に設けられ、前記陰極と間隔を置いて対向する陽極と、
を備えている電気めっき装置。
A plating tank for storing a plating solution;
An annular cathode auxiliary electrode holder fitted in the through hole at the bottom of the plating tank;
To-be-plated object holder slidably inserted in the cathode auxiliary electrode holder and having a placement part for the object to be plated on the upper surface thereof;
A cathode which is provided on the upper surface side of the object holder and contacts the lower surface of the object to be plated on the mounting portion;
Positioning means for regulating a fixed position of the workpiece holder;
An anode provided in the plating tank and facing the cathode at an interval;
An electroplating apparatus.
めっき液を収納するめっき槽と、
該めっき槽の底部の貫通穴に嵌着された、環状の陰極補助電極ホルダと、
陰極補助電極ホルダの上面に設けられた環状の陰極補助電極と、
該陰極補助電極ホルダに着脱自在に挿着され、その上面に被めっき物の載置部を有する被めっき物ホルダと、
該被めっき物ホルダの上面側に設けられ、前記載置部上の被めっき物の下面に当接する陰極と、
被めっき物ホルダに設けられた真空吸着手段と、
該被めっき物ホルダの固定位置を規制する位置決め手段と、
前記めっき槽内に設けられ、前記陰極と間隔を置いて対向する陽極と、
前記めっき槽の底部側に、摺動自在に設けられたパドルと、
を備えている電気めっき装置。
A plating tank for storing a plating solution;
An annular cathode auxiliary electrode holder fitted in the through hole at the bottom of the plating tank;
An annular cathode auxiliary electrode provided on the upper surface of the cathode auxiliary electrode holder;
A to-be-plated object holder that is detachably attached to the cathode auxiliary electrode holder and has a placement part for the to-be-plated object on the upper surface thereof;
A cathode which is provided on the upper surface side of the object holder and contacts the lower surface of the object to be plated on the mounting portion;
Vacuum suction means provided on the workpiece holder;
Positioning means for regulating a fixed position of the workpiece holder;
An anode provided in the plating tank and facing the cathode at an interval;
A paddle slidably provided on the bottom side of the plating tank;
An electroplating apparatus.
陰極が、コンタクトリングを介して被めっき物の下面に当接することを特徴とする請求項1、又は、2記載の電気めっき装置。   The electroplating apparatus according to claim 1, wherein the cathode contacts the lower surface of the object to be plated through a contact ring. 被めっき物ホルダの載置部にウエハが載置され、該ウエハのめっき面と陰極補助電極ホルダの上面とが同一平面上に位置していることを特徴とする請求項1、2、又は、3記載の電気めっき装置。   The wafer is mounted on the mounting portion of the object holder, and the plating surface of the wafer and the upper surface of the cathode auxiliary electrode holder are located on the same plane, or 3. The electroplating apparatus according to 3. 前記位置決め手段は、陰極ホルダの内周面に設けた係止部と、被めっき物ホルダの外周面に設けられ、前記係止部と係合する係合部と、からなることを特徴とする請求項1、2、3、又は、4記載の電気めっき装置。   The positioning means includes an engaging portion provided on the inner peripheral surface of the cathode holder, and an engaging portion provided on the outer peripheral surface of the workpiece holder and engaged with the engaging portion. The electroplating apparatus according to claim 1, 2, 3, or 4. 陰極補助電極ホルダが、被めっき物のめっき面を押さえる押さえ爪を備えていることを特徴とする請求項1、2、3、4、又は、5記載の電気めっき装置。   6. The electroplating apparatus according to claim 1, wherein the cathode auxiliary electrode holder includes a pressing claw for pressing a plating surface of an object to be plated.
JP2005152750A 2005-05-25 2005-05-25 Electroplating apparatus Pending JP2006328470A (en)

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JP2008024962A (en) * 2006-07-18 2008-02-07 Tousetsu:Kk Electroplating device
WO2016191408A1 (en) * 2015-05-26 2016-12-01 Applied Materials, Inc. Electroplating apparatus
US10480094B2 (en) 2016-07-13 2019-11-19 Iontra LLC Electrochemical methods, devices and compositions

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JPH1025600A (en) * 1996-07-09 1998-01-27 Nec Ibaraki Ltd Paddle rotation type plating method and plating device
JPH1192993A (en) * 1997-09-18 1999-04-06 Tdk Corp Electrode assembled body, cathode device and plating device
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JPH02310393A (en) * 1989-05-22 1990-12-26 Nec Corp Device for plating semiconductor substrate
JPH07300699A (en) * 1993-01-15 1995-11-14 Internatl Business Mach Corp <Ibm> Multicompartment electroplating device
JPH1025600A (en) * 1996-07-09 1998-01-27 Nec Ibaraki Ltd Paddle rotation type plating method and plating device
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Publication number Priority date Publication date Assignee Title
JP2008024962A (en) * 2006-07-18 2008-02-07 Tousetsu:Kk Electroplating device
US7828944B2 (en) 2006-07-18 2010-11-09 Tosetz Inc. Electroplating apparatus
WO2016191408A1 (en) * 2015-05-26 2016-12-01 Applied Materials, Inc. Electroplating apparatus
US10047453B2 (en) 2015-05-26 2018-08-14 Applied Materials, Inc. Electroplating apparatus
US10480094B2 (en) 2016-07-13 2019-11-19 Iontra LLC Electrochemical methods, devices and compositions
US10697083B2 (en) 2016-07-13 2020-06-30 Ionta LLC Electrochemical methods, devices and compositions

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