TW200926281A - Methods and apparatus for cleaning semiconductor wafers - Google Patents

Abstract

An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designate receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

Description

❹ ❹ 200926281 IX. Description of the Invention: [Technical Field] The present invention generally relates to a method and apparatus for wet cleaning a surface, more specifically to a +conductor> Put more 'methods and equipment inside the loop, so that the cleaning solution enters (4) === to the separation between the separated phase solutions and pollution control to a minimum. Recycling with hydrazine and clearing the flood [Prior Art]

The semiconductor component is fabricated in a semi-conducting step using a plurality of different processes, such as fabrication and fabrication, to fabricate transistors and interconnects to connect the transistor terminals to the semiconductor crystals for electrical conduction (eg, metal). , cover the medium on the material =. The trenches and vias connect electrical signals and currents between the transistors, between the semiconductor component 2 and the external circuitry. In the process of forming interconnection elements intrinsically, the semiconductor wafer may be subjected to processing such as masking, etching, and deposition to form a semiconductor transistor and a desired electronic circuit' to connect the transistor terminals. Specifically, a plurality of masks, ion implantation, annealing, and plasma etching, and physical vapor deposition steps are performed to form narrow trenches, transistor solutions, loops, and interconnections. structure. At each step, particulate contaminants may be added to the front and back of the wafer. These particles and _ dyes can cause defects on the surface of the wafer and reduce the yield of integrated circuit elements to remove particles and contaminants. We have been using wet method 200926281 for cleaning tank equipment for many years. A wet cleaning tank apparatus can continuously process a batch of wafers (typically 25 wafers) in a plurality of cleaning tanks. Between the two cleaning tanks, the treated batch of wafers is rinsed clean to remove any residual cleaning solution from the batch of cleaning tanks. In a wet cleaning bath apparatus, the flow rate of the cleaning solution between the gaps of the wafer is relatively low, so the cleaning efficiency, especially for small particles, is limited. Since the time requirements for each cleaning step are different, it is difficult to control the waiting time for transferring one batch of wafers from one cleaning tank to another, as this processing deviation is also inevitable. Furthermore, cross-contamination between two wafers is inevitable during the processing of the same batch of wafers for the batch process. Since wafer sizes are as large as 3 〇〇mm and manufacturing techniques are increased to 65 nm or less, conventional wet cleaning baths are no longer effective and reliable in removing particles and contaminants from wafers. . Single wafer cleaning equipment has become an option for cleaning wafers. The single crystal wafer cleaning apparatus processes only one wafer in one cleaning module at a time, sequentially injects various cleaning solutions on the surface of v, and rinses the cleaning solution with deionized water. The use of a single wafer processor facilitates precise control of wafer spin and cleaning solution spray time and eliminates cross-contamination between wafers. In order to save the cleaning solution and reduce the cost of disposal of the discarded chemicals, it is necessary to recycle or reuse those cleaning solutions. However, • Because all cleaning steps are performed in a single cleaning chamber, it is a challenge to recycle or recycle those cleaning solutions and control cross-contamination to the ppm level. The less cross-contamination, the less impact it has on the cleaning of 200926281 and the longer the service life of the cleaning solution. Therefore, a powerful and precisely controlled cleaning solution for recycling or recycling is required to reduce cross-contamination between cleaning solutions and prolong the life of the recycled or recovered cleaning solution. SUMMARY OF THE INVENTION One embodiment of the present invention discloses a cleaning chamber having a turntable having a drain outlet. The turntable is rotated about the i-center axis by the action of the motor, so that the drain outlet moves to the access point below the turntable. By placing the drain outlet directly above the receiver, the cleaning solution collected by the turntable can be directed to the receiver designated by the person. —μ _ is a cleaning chamber that is used to collect the cleaning solution. The turn, the central axis of the rotation, so that the cleaning chamber is aligned with each of the turntables selectively below the drain outlet: " above. The cleaning solution that is placed in the designated receiver towel/washing chamber of the cleaning chamber is introduced into the turntable. There are many: a cleaning chamber provided with a turntable, which is a grounding mechanism: :: Set: Receiver for washing solution. The turntable is received by each of the - aligning dials. The drain outlet of the rinsing chamber is selectively above the water outlet 'from the second'. The receiver is placed in the scheduled receiver of the cleaning chamber. The introduction of the cleaning solution collected by the washing chamber refers to another partial enthalpy # of the present invention, and an embodiment discloses that the space with rapid dumping ability is 200926281. The space between the water outlet and the receiver is sealed by an air expansion. The rinsing fluid in the package and the platter can be quickly pumped out by the pump connected to the sump. • The invention has many different forms of embodiment, which will be seen in the drawings and the illustrated embodiment. It is to be understood that the detailed description of the principles of the present invention is not intended to limit the scope of the present invention to the embodiments of the materials described herein. It is generally required that the surface of the semiconductor substrate must have a specific genus n after cleaning. An example is to modify the surface of the substrate to have hydrophilicity during subsequent chemical mechanical polishing of the dielectric layer or metal layer. Surface conditioning agents are often added to the cleaning solution so that cleaning and surface conditioning can be accomplished in the same processing step. In the present invention, the cleaning and adjustment of the surface of the semiconductor substrate can be carried out by mixing the solution or separately using several separate solutions. In the following description, the term "cleaning solution" means a liquid or a liquid mixture, which can Effectively remove impurities from the surface of the semiconductor substrate, or adjust the surface of the substrate to the desired properties, or both. 1A-1E show details of an exemplary embodiment of a semiconductor substrate or wafer cleaning apparatus employing a rotatable turntable, a wafer cleaning apparatus comprising a first rotary drive, in accordance with the present invention The mechanism 1016 drives and rotates the chuck 1 000; the processing chamber 1〇〇2; the turntable 1 008 having the drain outlet 1〇〇9, and the turntable 1 008 is rotated by the second rotary drive mechanism ι 8 driving 200926281; The used cleaning solution is taken from the rotating wafer blue and introduced into the cover '1〇〇6 of the turntable 1 008; the plurality of cleaning solution receivers 1014; and the upper and lower movements for driving the cover 1〇〇6 Drive unit 1 020. Rotate the turntable 1 008 to align the cleaning solution receiver ι〇ι4 with the drain outlet 1 009 of the turntable 1 008. The treatment chamber is 1〇〇2 and has a drain outlet 1〇1〇 for discharging the discarded cleaning solution. The semiconductor substrate cleaning apparatus of Fig. 5 is equipped with, but not limited to, a nozzle 1〇〇3 for injecting a cleaning solution. ❹

It is to be understood that the turntable 1 〇 08 can be used to intercept the used cleaning solution, or not all used cleaning solutions need to be collected, and the cover in Figure 1A is optional. In another embodiment, the turntable 1 008 and the refresher 1 000 can be rotated about the same axis or two + (four) axes, and the drive assembly Π) 2 〇 can be - gas red. In another embodiment, the semiconductor substrate cleaning apparatus can include a cleaning solution receiving benefit 1014' for recycling or recycling only one cleaning solution. The entire cleaning process for cleaning a wafer 1〇〇1 using the cleaning apparatus shown in FIG. 1Α-1Ε includes the following steps: loading the semiconductor substrate 1001 onto the chuck 1 by a robot arm, using at least one cleaning solution Performing at least one cleaning cycle; drying the semiconductor substrate 1001; unloading the semiconductor substrate 1001 from the chuck 1 . It is assumed that a cleaning solution is used throughout the cleaning process. The cleaning cycle comprises the following steps Bi is an integer, and (d), 0 < I° According to the present invention, various cleaning solutions can be used to clean the wafer, and for each of 200926281, a cleaning cycle is applied. The cleaning cycle for the cleaning cycle includes: a cleaning solution moving the water outlet of the turntable 1008. 1 ^ 9 ^ The first cleaning solution of the receiver 丨〇丨 4 is aligned, " used to collect the receiver 1014 directly above. w _ mouth 1 009 is located in Naijia's at a preset time + coffee ^ ^ I kind of cleaning solution is injected onto the semiconductor substrate; 1, the first solution. Leaving left into the first type of cleaning ❹ ❹ According to one embodiment, the cleaning cycle is advanced to one. The drain outlet 1 009' of the crucible 8 is aligned with the T-record of the moving turntable, and the receiver 1014 of the rubbing solution; the liquid is first injected into the semiconductor substrate 1001 at a predetermined time; the injection is stopped. The rinse liquid. An example of cleaning a wafer 1001 in a conventional order is N=2: Dunb, with a drive lag 1 υ υ b moved to a low seven, and the wafer 1001 is loaded onto the chuck with a robotic arm (not shown). The upper part is shown in Figure U; the cover 1 006 is moved to the high position as shown in Figure 2. Second, the first cleaning cycle is performed using the first cleaning solution, including: rotating the chuck 1 by the first rotary driving mechanism 1〇16, rotating the turntable 1008 by the second rotary driving mechanism 1018, so that the turntable The j water outlet 1 009 of 1〇9〇8 is located directly above a receiver 1〇14, so that the first cleaning solution can be collected in the receiving state, as shown in Fig. 1B. During the predetermined cleaning time, the first cleaning solution is continuously injected into the wafer 1001 by the nozzle 1001, and the first cleaning solution is removed from the rotating wafer 1001. 200926281 ❹

The liquid is collected by the cover 1GG6 and then flows down to the turntable and is collected by the turntable 1 008 and finally discharged to the receiver = 14 via the drain outlet ι〇〇9. Stop injecting the first cleaning solution. Rotate the turntable so that the drain outlet 1〇09 is located directly above the other receiver 1〇14 to collect the discarded cleaning solution, as shown in Figure c. During the preset cleaning time, deionized water (DI) is continuously injected onto the wafer ,j, and the silk water (DI) separated from the wafer is collected by the overlay & 1 meeting, and then The arrival carousel 1 008' eventually flows into the receiver 1〇14 via the drain outlet 1〇〇9. The injection of deionized water (DI) e is stopped in order to completely remove the first cleaning solution from the drain outlet. The cleaning cycle in the present invention may also include a flushing cycle, which will be described in detail below. Third, performing a second cleaning cycle with the second cleaning solution includes: rotating the turntable 1 008 such that the drain outlet 1 009 is directly above the receiver 1014 for collecting the second cleaning solution, as shown in FIG. 1D Show. The second cleaning solution is continuously injected during the preset cleaning time. Stop injecting the second cleaning solution. Rotating the turntable 1 008 causes the drain outlet 1〇〇9 to be located at the receiver “directly above” for collecting the discarded second cleaning solution as shown in Figure ic. During the preset cleaning time, in the wafer 〇〇 Continue to inject deionized water (D丨) onto ι and then stop injecting deionized water (D丨). Fourth, spin dry wafer 1001 and move cover 1〇〇6 to a low position. — Fifth 'Mechanical The arm unloads the wafer 1〇〇1 from the chuck 1 000. One advantage of the cleaning apparatus of the present invention is that multiple cleaning solutions can be recycled or recycled without increasing the size of the cleaning chamber 1002. In the above-mentioned work 11 200926281 • Art step The solution contains chemicals not only deionized water, for example: . When the wafer is cleaned, the surface active solution can be used instead of deionized water. When the same: the above-mentioned cleaning deionized water can be mixed with carbon dioxide gas or other gases in advance to improve Cleaning efficiency. The temperature of the deionized water is preferably between 20 and 9 ° C. • In one embodiment, the semiconductor substrate or wafer is cleaned using the cleaning apparatus of the present invention. The cleaning solutions obtained include, but are not limited to, the following solutions: 1· H2S (h: H2〇2 = 4: 1 ' Temperature range: i2〇-15 (TC; ® 2. HF: H20=1: (50-1 000) ), temperature range: 2〇_2yc; 3. NH40H:H202:H20 =1: (Bu 2): (5-100), temperature range: 25-70〇C; 4. HCl: H2〇2: H2〇 =1:1: (5-1〇〇), temperature range: 25_75. In order to keep the cleaning solution highly pure, it is necessary to recycle or recycle only a part of the cleaning solution. In general, the cleaning solution has been used. The first part does not need to be recycled or recycled. The process of recycling or recycling a & cleaning solution is similar to the above, but the cleaning cycle is a little different. According to the above situation, the cleaning cycle using the first cleaning solution is used. The method includes: rotating the turntable 1 008 and the drain outlet 1〇〇9 such that the drain outlet 1〇〇9 is located at the top of the receiver 1〇14 for collecting the waste cleaning solution as shown in FIG. 1E and FIG. 1F. The first cleaning solution is continuously injected for a predetermined time 1. The predetermined time ti depends on how many cleaning solutions will be drained or discarded. The disk is said to drain and drain σ 1 009 such that the drain outlet is located directly above the other receiver 1014 that collects and recycles the second cleaning solution 12 200926281 • as shown in Figure 1E. At the second predetermined time U Thereafter, the first cleaning solution is continuously injected. The second predetermined time period tz depends on how much cleaning solution will be recycled or recycled. The relationship between t!, t2 and the relationship of the cleaning solution recycling percentage RR As follows: RR = t2/(ti + t2) (1) The three-way valve 1 〇1 5 can be used to control the discharge or recycling of the cleaning solution, as shown in Figure 1E. In this case, the turntable 1 008 can stay on the receiver i 〇 14' by controlling the opening of the valve 1 〇 15 on the pipe of the receiver 1 〇 14 to determine the discharge or reuse of the cleaning solution. Here, it should be noted that the receiver for collecting the discarded type I cleaning solution and the receiver for collecting and recycling the first type of cleaning solution may be the same or different. In an alternative embodiment, the number of drain outlets 1〇〇9 on the turntable 1 008 can be more than one, thereby reducing emissions time and increasing emissions efficiency. 3A-3B show another embodiment of a transfer disc in a wafer cleaning apparatus in accordance with the present invention. The shape of the turntable 3008 is designed to have sharp edges so that the cleaning solution residue does not remain on the edge of the turntable. The turntable 3008 includes a drain outlet 3〇〇9, an inner annular wing 3〇〇8b and an outer annular wing 3008A. This design prevents the receiver from being contaminated by the compound. During the flushing cycle, the deionized water can overflow beyond the turntable 3〇〇8 to clean the side walls of the turntable 3008. The wings 3〇〇 and 3〇〇8B prevent the overflow of deionized water to reach the receiver. The flow rate of the cleaning solution can be in the range of 1-2 standard liters per minute (slm), 13 200926281 and the flow rate of the deionized water in the rinsing step can be in the range of 2-5 slm. In order to increase the cleaning efficiency (quickly mixed with the residual cleaning solution), the deionization water temperature is set in the range of 50-90 °C. The turntable 3008 and the cover 3006 are composed of Teflon, POLYVINYLIDENE FLUORIDE, ceramics and diamond. The surface roughness is in the range of submicron or smaller. In order to reduce the residue of the cleaning solution on the walls of the cover 3〇〇6 and the turntable 3〇〇8, a plurality of nozzles 3028, 3026, and 3024 are placed in the vicinity of the surface of the cover 3006 and the turntable 3008. These nozzles are connected to the clean tubing. After each of the cleaning solutions is injected in the above cleaning step and after the DI water is injected, the N2 cleaning step can be achieved by those nozzles. Another embodiment of a turntable in a wafer cleaning apparatus in accordance with the present invention is shown in Figures 4A-4E. This embodiment is similar to the embodiment shown in Fig. 3a^b(d) except that the air expansion seal face and the bracket leak are added. The air expansion seal 4 0 3 0 is used; π· „ Μ „ μ is fastened to open or close the drain outlet. In order to increase the cleaning efficiency and reduce the amount of between the τ and deionized water during the cleaning, the compressed air (CD air) of the coupon field expands the sealed raft to seal the deionized water in the turntable 4〇〇8. Then suspend or interrupt the enchantment. The atmosphere is forced to expand the seal 4〇3〇 < fly with a 4_. Then, the above steps of 01 water, main and birefringence are opened to open the drain outlet table and the drain is discharged, and 4008 is cleaned to the extent required. And (3) turntable according to Figure 4C and Figure 4D,! ·;, such as the above-mentioned cleaning step to the rinsing of the pollution level after the cycle of each leaf 篡 r ^ * Ten different examples of the use of H2S sputum in the court are described below. Υ4 Evil horse cleaning solution 14 200926281 It should be noted that the calculations shown below are based on the following assumptions: 1 · Concentrated H2S〇4 completely infiltrated in the plastic wall of the turntable (film wetting); (The capillary force generated by the curvature is equal to the gravity) Calculate the residual film thickness; 2. The discharge of Η2 S 04 is fast enough to reach the equilibrium thickness at the end of the discharge; 3. The diluted IhSCh is not completely wetted on the plastic wall (droplet infiltration) 4. Estimate the maximum straightness of the droplets attached to the plastic wall by the length of the capillary. 5. In either case, as shown in Figure 4D, the amount of residual liquid on the horizontal wall is the number of residual liquids on the vertical wall. 6. The filling process is completed in 5 seconds; 7. The discharge process is completed in 2 seconds; 8 • The residual liquid is temporarily mixed with the newly injected liquid; 9. The temperature of the cleaning solution and deionized water is 7〇〇c; ❹ 10 The shape of the turntable is simplified as shown in Figure 4C. ----2, for ~1 today, "1 call, · outer diameter of the turntable, cm 17 turntable inner diameter, cm 15 turntable height, cm, imM·1 -- 2 concentrated H2S〇4 concentration 93 %重量_ 93% Surface tension of H2SO4 at 7〇C, dyns/cm 50.76 Surface tension of deionized water at 7〇C, dyns/cm 64. 47 93% H2S〇44 Density at 70〇C, g/cm3 1. 98 15

200926281 9g% Hz〇 at 70. . Time]~~ 1 When the deionized water fills the turntable - —— 』 S 5 Deionized water discharges the turntable time, S 2 first calculates the equilibrium thickness of the concentrated H2S〇4 immersion film due to: Δρ^ A = pgAh9 where A = 2nRd A 2cr 2σ op = — = = pgh rd The liquid layer thickness d is: 2σ hpg The total injection volume is the total residual sulfuric acid volume: + 2aR2hd + Tr(Rf -Rl, h*2d When the volume of residual ihS〇4 has been Knowing the time, the concentration of 'H2S〇4 in the residual liquid after the first injection and discharge in the residual liquid can be calculated. Dilute H2S〇4 after the first injection.

The surface is incompletely dip, and the solution of the coffee 4 forms a drop at the wall and bottom, while the droplet is hemispherical; the radius of the hemispherical droplet is as follows. 'The radius of the droplet is equal to the length of the capillary, where I

16 200926281 Rate' obtained the concentration of residual H2S〇4. It can be calculated that the radius of the residual droplets and the assumed surface coverage HdCh(four)(four) product are displayed after each cycle of Fig. 4E. The residual in the droplets is then calculated. A similar calculation is performed after each rinse cycle, and the concentration of residual ηα〇4 in the droplets after discharge. Four injection and discharge cleanings were completed in 6 6 seconds in the junction after the first injection and the nth flush cycle to control the contamination to the ppm level. Inject and discharge flushing liquid ❹

That. Wonderful products π, ^ ^ ; 疋 - a rinse cycle, ,, ', can be understood for professionals familiar with the relevant technology:: From the above calculations can be drawn: no matter which kind of cleaning solution, in H In the cleaning steps mentioned, it is possible to obtain ppm level contamination after several flush cycles. It should be noted that in the above calculation, the drainage process time is set to 2 seconds. L. It is difficult to use all the flushing liquid from the turntable in such a short time (for example, within 2 seconds) by using the gravity method shown in Fig. 3A. 3 the coffee is clean. Figures 5A and 5B illustrate another embodiment of a discharge device in a cleaning apparatus in accordance with the present invention. The discharge device includes an air expansion seal 5034' drainage receiver 5014, a receiver outlet 5〇36, a pressurized gas nozzle 5038, and a compressed air/vacuum switching valve 5〇33. "The pressure of the gas jet 5038 is i5_6 psi (pounds per square foot). The workflow of the discharge device is as follows:

The disk 5008 is such that its drain outlet 5 〇〇g is located directly above the receiver ς〇ΐ 4 and the seal 5034. Switching valve 5〇33 switches to compressed air (or CD 17 200926281 =) floor. Put deionized water into the day and day. #去离子水 When the full tray 5008 is stopped, the main part is mixed with m ▲ people deionized water ° open pressure (four) off to form pumping 2, and the deionized water is quickly sucked out of the turntable. Repeat the above injection and discharge cycles, & i β + 乂 based on this until the residual contaminants are controlled to the desired PPm value. The switching valve 5〇33 is switched to the vacuum position to cause the seal Μ% to contract and rotate to turn I 5QQ8 ' to rotate the drain outlet directly above the receiver for the other cleaning solution. ❹ The above-mentioned nitrogen-driven Ventura pump can be replaced by a general bellows pump, diaphragm pump, rotor pump or metering pump. The material of the seal 5034 can be Viat〇n, Tefl〇n, or any other chemically resistant material. Figure 5C shows another embodiment. There is a gap between the drain receiver 5014 and the drain outlet 5〇〇9 of the turntable 5008. The gap shown in Fig. 5 can be replaced by the air-expansion seal 5 〇 34 shown in Fig. 5A, and has a width of 0. lmm - 2 inm, preferably 〇. lmm_lmm. Another embodiment is shown in Figure 5D. An elastic bellows 5013 is inserted between the receiver 5〇14 and the ring © 5015. Once the pressurized gas nozzle 5038 is opened, the annulus 5015 will automatically rise due to the attractive force generated by the hollow air flow in the gap and the size of the gap becomes 〇. The above process will increase the speed at which deionized water is quickly drawn out of the turntable. 2A-2B illustrate an embodiment of another wafer cleaning apparatus in accordance with the present invention. The embodiment is similar to the apparatus shown in Figures 1A and 1B, except that in the present embodiment the drive mechanism 2021 can cause the turntable 2007 to rise or fall vertically. Before loading the wafer 2001, the turntable 2007 is moved to a position lower than 18 200926281, as shown in Fig. 2A. After loading the wafer 2〇〇1, the turntable 2〇〇7: is moved to a high position for collecting the cleaning solution, as shown in FIG. The wafer chuck 2000 is rotated by the motor 2016, and the turntable 2007 is rotated by the motor 2018. The reference numerals - 2002, 2009, 2010, and 2014 in the figures "and 2" correspond to the features indicated by reference numerals 1 002, .1 〇 09, 1010, and 1014, respectively, and thus will not be described again here. Another embodiment of a wafer cleaning apparatus is shown in accordance with the present invention. The embodiment is similar to the embodiment shown in Figures 2 and 2, except that the wafer lifting disk 6042 is driven by a drive unit 6040, such as a cylinder. The drive unit 6040 moves the disk 6042 to a higher position, as shown in FIG. 6; then the wafer 60 0 1 is loaded onto the disk 6〇42 by the robot arm (the robot arm is not shown here)^the disk 6042 is moved to Lower position and loading the wafer 6〇〇1 onto the lost disk 6000' as shown in Fig. 6. The reference numerals 6002, 6007, 6009, 6010, 6014, 6016 and 6018 in Figs. 6A and 6B respectively correspond to the drawings The features indicated by the marks 1002, 1009, 1〇1〇, 1〇14, 1016 and 1〇18 are therefore not described here. © Figures 7Α-7Β shows another of the wafer cleaning apparatus according to the present invention. Embodiment. This embodiment is similar to the embodiment of FIGS. 6 and 6 except for the cylinder 7041. The wafer chuck 7000 can be moved up and down. The cylinder 7041 moves the chuck 7000 to a higher position, thereby loading or unloading the wafer 700 by a robot arm, as shown in Fig. 7A; then it moves down to a lower position. The position is further subjected to a wafer-cleaning process, as shown in Fig. 7B. Reference numerals 7002, 7, 7, 700, 7010, 7014, 7016, and 7018 in FIGS. 7A and 7B correspond to reference numeral 1002, respectively. 19 200926281 - Features denoted by 1009, 1010, 1014, 1016 and 1018, the description will not be repeated here. ~ Figures 8A-8B show another embodiment of the wafer cleaning apparatus according to the present invention. The apparatus includes a cleaning chamber 8002 and a drain outlet 8009, a wafer chuck 8000 driven by a motor 8016, a lifting disc 8042, a cylinder 8040 for driving the lifting tray 8042 to rise and fall, and a tray 8046 having a plurality of receivers 8014. And an electric motor 8018 for rotating the tray 8046. The cleaning chamber 8002 has a wall 8050 for preventing the cleaning solution from overflowing from the tray 8046. The exhaust outlet 8044 is for discharging chemical vapor® and smoke. Cleaning Prior to the wafer 8001, the receiver 80 1 4 collecting and recycling the first cleaning solution is moved directly below the drain outlet 8009 of the cleaning chamber 8002. Before the wafer 8001 is cleaned with the second cleaning solution, the collection is recycled second. The receiver 8014 of the cleaning solution is moved directly below the drain outlet 8〇〇9 of the cleaning chamber 80〇2. The receiver 8014 for collecting waste water is moved directly below the drain outlet 8〇〇9 of the washing chamber 8002 before the wafer 8 is washed with ionized water. The tray 8046 further includes a drain outlet 8〇1〇 for discharging the cleaning solution or overflowing the water outside the receiver. The receiver 8〇14 is coupled to the flexible tube 8〇48 to accommodate the relative motion or distortion that occurs during rotation of the tray 8046. In order to minimize this twisting motion, the rotation angle of the tray 8 (four) cannot be greater than 2/3 turns at the maximum. In another embodiment, shown in Figure 8C, the expanded seal 8030 has the same function as the seal of Figure 4A. Figures 9A-9B illustrate another embodiment of a wafer cleaning apparatus of the present invention. The embodiment is similar to the embodiment of 8A and 8β T not 33 except that the tray 〇η4β having a plurality of receivers 9014 with 20 200926281 does not rotate but performs translation and moves straight so that the machine The arm can load and unload the crystal >} 9001. ❹

The tray 9〇46 is driven by the motor 9G19 to perform translation. The cleaning apparatus further includes a nozzle 9 〇 26 located in the cleaning chamber 9〇〇2. The nozzle 9〇26 can blow the residue of chemicals or water to the drain outlet 9〇〇9. The tray 9.46 step-by-step includes a drain outlet 9010' to discharge the cleaning solution or water overflowing the receiver. The receiver 9014 is coupled to an elastic tube or bellows 9〇48 to handle the relative movement or relative rotation of the tray 9G46 while in linear motion. Reference numerals 9〇16, 9〇19, 9〇41, 9〇44, and 9050 in FIGS. 9A and 9B correspond to the reference numerals 8〇16, 8〇18, 8〇4〇, and 8050, respectively. Features, so I won't go into details here. Figures 10A-10B show another embodiment of a wafer cleaning apparatus in accordance with the present invention. The embodiment is similar to that shown in Figures 1A and 1B except that another collection tray 10004 is added for collecting another cleaning solution. The collection tray 10004 can be raised and lowered by the robot arm to load or unload the wafer 1 0001. The collecting tray 1 0004 is further connected to the drain outlet via an elastic tube or bellows 1〇〇12. The purpose of the collection tray 10004 is to specifically collect some cleaning solutions that are not ppb-grade (parts per billion) cross-contamination with other cleaning solutions, such as hf cleaning solutions. When the collection tray 1 〇〇〇 4 is used, the cover is moved to a relatively low position to cover the turntable 1 0008. The loss disk 1 0000 is rotated at a speed of 50-1 000 rpm so that the cleaning solution injected onto the wafer 10001 is radially plunged into the collection tray 100 04. Reference numerals 1〇〇〇2, 1〇〇〇7, 10009, 10010, 1〇〇14, 21 200926281. 10016 and 1〇018 in FIGS. 10A and 10B correspond to reference numerals 1002 and 1009, respectively. 1010, ; 1〇14, 1016 and the features indicated, so they are not described here. 11A-11B show another embodiment of a wafer cleaning apparatus in accordance with the present invention. The embodiment is similar to that shown in Figures 2A and 2B, except. Another collection tray 11004 was added to collect another cleaning solution. The collection tray 11004 can be lowered and lowered to load or unload the wafer 11001. The collecting tray 1 1 004 is further connected to the drain outlet via an elastic tube or bellows 11 12 . The purpose of adding the collection tray 11 〇〇4 is to specifically collect some cleaning solutions that are not ppb-grade (parts per billion) and contaminated with other cleaning solutions, such as hf solutions. When the collecting tray 11004' is used, the covering is moved to a relatively low position, thereby avoiding contamination of the cleaning solution. The icons s11, 11007, 11007, 11009, 11010, lions 11016 and 11018 in Fig. A and 丨1β correspond to the symbols 1002, 1〇〇9, 1() 14, 1016 and 1018, respectively. Features, so I won't go into details here. Figures 12A-12B show another embodiment of a wafer cleaning apparatus in accordance with the present invention. The embodiment is similar to that shown in Figures 1A and 1B, but another stationary collection tray 1 2004 is used to collect another cleaning solution and add a lifting tray 12〇42 to the chuck 12000. Further connecting to the drain outlet via a pipe. The hoisting plate set 2 moves up and down to achieve the loading and unloading of the wafer 12001 to the chuck 12 。. - The purpose of adding the collection tray I2004 is to collect some cleaning solutions. These cleaning solutions cannot be cross-contaminated with ppb grade (part per • billion) with other cleaning solutions, such as hf solution. When the collection tray 12 〇〇 4 receives 22 200926281 set of cleaning solution, the cover 1206 is moved to a relatively low - position to cover the turntable 12 〇〇 8 . The reference numerals in FIGS. 12A and 12B - 丨2002, I2009, 丨2010, 12014' 12016 and 12018 correspond to the reference numerals 1002, 1009, 1〇1〇, 1〇14, 1016 and 1018, respectively. Features, so I won't go into details here. Figures 13-13-1 show another embodiment of a wafer cleaning apparatus in accordance with the present invention. The embodiment is similar to that shown in Figures 12A and 12B except that the cover 13006 is covered with a cover 13006 and a portion of the stationary collection tray 130〇4. When the cover 1 3006 is in the lower position, the cleaning solution of the wafer 13001 will be mainly collected by the stationary collection tray ι3 〇〇 4 and a portion of the cleaning solution attached to the outer surface of the cover 13006 will flow. Go to the stationary collection tray 13004. Reference numerals 1 3002, 1 3009, 13010, 13014, 13016, and 13018 in FIGS. 13A and 13B correspond to the features indicated by reference numerals 1002, 1 009, 1010, 1014, 1016, and 丨〇18, respectively, and thus No longer. Although the present invention has been described in connection with the specific embodiments, examples, examples, and applications of the above, it will be apparent to those skilled in the art that various modifications and changes can be made without departing from the scope of the invention. For example, the number of drain outlets on the turntable can be more than one to increase the sixth rate of drainage or reduce the time of draining 0 - [Simplified illustration] Figure 1A-1F depicts an example wafer cleaning apparatus; Figure 2Α-2Β An example wafer cleaning process is described; 23 200926281 Figures 3A-3B depict a turntable in a wafer cleaning apparatus; • Figures 4A-4E depict a turntable and air expansion seal, and simulation results in a wafer cleaning apparatus; 5A-5D describes another turntable and seal in a wafer cleaning apparatus. Figures 6A-6B depict another exemplary wafer cleaning apparatus; Figures 7A-7B depict another exemplary wafer cleaning apparatus; Figures 8A-8C depict another exemplary wafer cleaning apparatus; Figure 9A-9B depicts another An exemplary wafer cleaning apparatus; [Fig. 10A-10B depicts another exemplary wafer cleaning apparatus; Figs. 11A-11B depict another exemplary wafer cleaning apparatus; [Fig. 1 2A-1 2B depicts another exemplary wafer Cleaning apparatus; [Fig. 1 3A-1 3B depicts another exemplary wafer cleaning apparatus. [Main component symbol description] 1000. Chuck 10〇2. Cleaning chamber (processing chamber) 1006. Covering 1 009. Drain outlet 1 0 14. Receiver

1020. Driving device 1001. Wafer (semiconductor substrate) 1003. Nozzle 1008. Turntable knowing drive mechanism 1010. Draining out 1015. Valve 1018. Second 斿 2000. Chuck 2001 · Wafer 24 200926281 _ 2002. Cleaning chamber 2007. Turntable. 2009. Drainage outlet 20 10. Drainage outlet 2014. Receiver 2016. Motor 2018. Motor 2021. Drive mechanism 3006. Cover 3008. Turntable 3008A. Outer ring wing 3008B. Inner ring wing 3009. Drain outlet 3024. Nozzle ❹ 3026. Nozzle 3028. Nozzle 4008. Turntable 4009. Drain outlet 4030. Seal 4032. Support 5008. Turntable 5009. Drain outlet 501 3. Bellows 5014. Receiver 5015. Ring 5033. Switching valve® 5034. Seal 5038 Nozzle 5036. Receiver outlet 6001. Wafer 6002. Cleaning chamber 6009. Drain outlet 6010. Drain outlet 6014. Receiver 6016. First rotary drive mechanism. 6018. Second rotary drive mechanism 6042. Lifting plate 6040. 25 200926281 . 7000. Chuck 7001. Wafer. 7002. Cleaning chamber 7009. Drain outlet 70 10. Drain outlet 7014. Receiver. 7016. First rotary drive mechanism _ 7041. Cylinder 7018. 8000. Chuck 8001. Wafer ❹ 8002. Cleaning chamber 8009 • Drain outlet 80 10. Drain outlet 8014. Receiver 8016. Motor 8018. Motor 8030. Seal 8040. Cylinder 8042. Lift plate 8044. Exhaust outlet 8046. Tray 8050. Wall 8048. Elastic tube © 9001. Wafer 9002. Cleaning chamber 9009. Drain outlet 9010. Drain outlet 9014. Receiver 9016. Motor 9019. Motor 9026. Nozzle 9041. Cylinder 9044·Exhaust outlet 9046. Tray - 9050 Wall 9048 · Elastic tube (corrugated tube) 26 200926281 10000. Chuck 10 0 0 2 · Cleaning chamber 10008 · Turntable 10 Ο 1 ο · Draining out D 10014. Receiver 1 〇 018 · Second rotary drive mechanism 10001. 10004. Collection tray 10009. Drain outlet 10012. Elastic tube (corrugated tube) 1001 6. First-rotation drive mechanism © 11001. Wafer 1 1004· Collection tray 11010 • Drainage D 11014. Receiver 11018·Second rotary drive 1 10 0 2 · Cleaning chamber 11009. Drain outlet 11012. Elastic tube (corrugated tube) 11016. First-rotation drive mechanism 12001. Wafer 12004. Collection tray 12〇08. Turntable 12 0 10 · Drainage_Exit 12014. Receiver 12018. Second rotary drive Mechanism 12000. Chuck 12002. Cleaning chamber® 12006. Covering 12 0 0 9. Drain outlet 12011. Pipe 12016. First rotating raking mechanism 12042. Lifting plate 13001. Wafer 13004. Collection plate 13002. Cleaning chamber 13006_. Cover 27 200926281 13008. Collection tray 13009. Drain outlet 13010. Drain outlet 13014. Receiver 13016. First rotary drive mechanism 3018. Second rotary drive mechanism

28 200926281 X. Patent application scope: ··· 1. A device for cleaning and adjusting the surface of a semiconductor substrate, comprising: a chuck for holding a semiconductor substrate; a first rotating device for driving the chuck Rotating a central shaft; cleaning the chamber; the turntable 'the turntable has at least one drain outlet; the second rotating means for driving the turntable to rotate about a central axis; 〇 at least one cleaning solution receiver located at the turntable Below, the cleaning solution receiver can be aligned with the drain outlet of the turntable by rotating the turntable. 2. The device of claim i, further comprising at least one nozzle for delivering a cleaning solution. 3. The device of claim 1, wherein the further comprising a cover for introducing a used cleaning solution into the turntable, the cover being located above the turntable, the covering The object rises and falls vertically under the action of a driving device. The device of claim 3, wherein the covering is made of one of the following materials: ceramic, polytetrafluoroethylene, polyether ketone, and polyvinylidene fluoride. 5. The device of claim 1, wherein the package further comprises

Claims (1)

200926281 includes a driving device for driving the turntable to a first position such that the chuck loads or unloads the semiconductor substrate and rises to a second position for cleaning or conditioning. The device of claim 1, wherein the turntable is made of one of the following materials: ceramic, polytetrafluoroethylene, polyetheretherketone or polyvinylidene fluoride. The device of claim 1, wherein the chuck further comprises a vertically moving disk that is moved to a first position for loading or unloading a semiconductor substrate, and Moving to the second position places the semiconductor substrate on the chuck. 8. The device of claim i, further comprising a vertical movement mechanism that drives the chuck to a first position to load or unload a semiconductor substrate of the Seto, and to the second location for implementation Clean or adjust the treatment. The apparatus of claim 1, wherein the turntable includes at least one nitrogen gas nozzle for removing the used cleaning solution from the surface. The apparatus of the above-mentioned patent scope, wherein the one step includes an inner annular wing and an outer annular wing. 30 200926281 . U 'as described in claim 1 of the patent application. Inflated to Kobe, Xia' which further. In the seal, located in the big mountain of the turntable; open or close the drain outlet. Under the exit, for -12 as described in the patent claim scope 1 includes An annular space is blocked, and further, the 'inflated 捃 seal' is located between the rows φ. The outlet and the receiver β 13 · as applied for the patent drain outlet net 6α blade placement, wherein the tray The monthly dead liquid absorbs the turn 14. The device described in claim 13 is a pressurized gas-driven venturi pump. The result is as described in claim 1. The apparatus, further comprising a static collector, located outside the turntable. The device of claim 1, further comprising a static collector located outside the turntable, located at the turn Above, and partially located above the stationary device - 17 as claimed in claim 1, wherein further comprising: a movable collector and a drive device located outside the turntable, 31 200926281 ", placing the collector down to the first position such that the chuck loads or unloads the semiconductor substrate 'and rises to a second position during cleaning or conditioning of the semiconductor material. The device of claim 1, wherein the apparatus further comprises a cover on the turntable for introducing the used cleaning solution into the movable collector and preventing the used The cleaning solution flows into the drain outlet of the turntable. 19. A device for cleaning a semiconductor substrate, comprising: a disk loss 'for holding a semiconductor substrate; a rotating device' for driving the chuck; a cleaning chamber having at least a drain outlet; a tray having at least one receiver disposed under the cleaning chamber; a moving device for driving the tray to cause the receiver to drain The device of claim 19, wherein the moving device is a rotating mechanism that drives the tray to rotate about an axis. 2 The device of claim 19, The mobile device is a translational mechanism that drives the tray to move laterally. The device of claim 19, wherein the clip 32 200926281 further comprises a vertical moving disk Moving to the first position: for loading or unloading the semiconductor substrate, and moving to the second position: placing or removing the semiconductor substrate from the chuck. The device of claim 19, wherein the device further comprises a vertical movement mechanism for driving the chuck to the first position to load or unload the semiconductor substrate, and to the second The location is cleaned or adjusted. EI 24. The device of claim 19, wherein the turntable comprises at least one nitrogen gas nozzle to purge used cleaning solution from the surface of the cleaning chamber. 25. The device of claim 19, further comprising a spherical air expansion seal located below the drain outlet of the cleaning chamber for opening or closing the drain outlet, thereby The used cleaning solution is removed from the chamber. 26. The device of claim 19, further comprising a toroidal air expansion seal between the drain outlet of the chamber and the receiver on the tray. The device of claim 19, wherein the row 7 outlet further comprises rapidly drawing the used cleaning solution out of the chamber. 28 - a method for cleaning a semiconductor substrate, comprising: loading a semiconductor substrate onto a chuck; cleaning with at least one In fact, 'w'~卞 is equal to each cleaning solution, performing the following cleaning cycle: rotating the semiconductor substrate and moving the specified row of receivers of the turntable to align, thereby collecting the specified cleaning solution; on the semiconductor substrate Injecting the specified cleaning solution; stopping the injection of the specified cleaning solution; applying the cleaning solution to each of the cleaning solutions onto the semiconductor substrate; drying the semiconductor substrate; ring until all of the semiconductor base is clear The material is unloaded from the chuck. The method of claim 28, wherein the cleaning cycle further comprises: ~ moving the drain outlet of the turntable to align the designated receiver to collect the discarded cleaning solution; on the semiconductor substrate Inject the rinse liquid. Stop injecting the rinse liquid onto the semiconductor substrate. 30. The method of claim 28, wherein the reducing comprises: , 34 200926281 adding a valve to the drain outlet to perform - flushing cycle: the cycle includes .· '; stopping when injecting the flushing liquid Drain and open the drain when a fills the turntable; 'The flush cycle is repeated until it remains on the surface of the turntable - the remaining material is removed to the required level. 31. As provided in Section 28 of the patent application, an additional pump is provided to connect to the received flushing liquid. 32. The method of claim 28, which is deionized water. '33. The method of claim 32, wherein the temperature of the ionized water is 20-9 Gt:. 34. The method of claim 32, wherein carbon dioxide gas is added to the subwater. • the chemical residue of the rinsing rinsing liquid is further removed from the rinsing liquid in the turret, and the method is removed, and the device is quickly pumped. 35