JP2001316878A - Equipment, system and method for liquid treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an equipment, a system, and a method for a plating, which can inhibit contamination in a plating equipment and system due to drips or spread of plating liquid, occurring on the transportation way after plating treatment, by means of washing a wafer W after plating. SOLUTION: The liquid treating equipment comprises a liquid treating tank 100 composed to be capable of housing the plating liquid and cleaning nozzles 200 for washing the wafer W, which can supply the cleaning liquid from a bottom side of the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor wafer and an LCD.
The present invention relates to a predetermined liquid processing apparatus, a liquid processing system, and a liquid processing method to be applied to various substrates such as substrates and a target object.

[0002]

2. Description of the Related Art In recent years, with the miniaturization of semiconductor devices,
There is a strong demand for lower resistance wiring materials for semiconductor devices. Copper (Cu) is known as a low-resistance wiring material, and there is a Cu plating method as a wiring forming technique. This C
The u plating method is to form a Cu layer on a substrate by bringing a semiconductor wafer into contact with a plating solution that is an acidic solution containing Cu and various additives and supplying a predetermined electric field.

[0003]

However, as described above, the plating solution may become a source of contamination in semiconductor manufacturing due to the fact that the plating solution contains a heavy metal substance such as Cu, or that the chemical properties are acidic. There were many. In particular, in the processes such as cleaning and drying after plating, and subsequent transportation, the above-described contamination source scatters around, lowering the yield in semiconductor manufacturing, contamination and corrosion of semiconductor manufacturing equipment, and contamination of semiconductor manufacturing lines. And cause problems such as corrosion.

[0004] Japanese Patent Application Laid-Open No. 2-310393 discloses an apparatus for cleaning after plating, but does not suggest any of the above-mentioned contamination.

The present invention has been made in view of such circumstances, and a liquid processing apparatus and a liquid processing apparatus capable of suppressing contamination by a plating solution in a process after a plating process and realizing stable production of a semiconductor device. It is an object to provide a processing system and a liquid processing method.

[0006]

According to a first aspect of the present invention, there is provided a liquid processing tank configured to accommodate a processing liquid so that an object to be processed can be subjected to liquid processing, and a cleaning unit for cleaning the object that has been subjected to the liquid processing. Wherein the cleaning means is configured to be able to supply a cleaning liquid from below the object to be processed. This makes it possible to remove the processing liquid remaining on the object after the liquid processing, thereby suppressing the diffusion of the processing liquid. Further, since the cleaning liquid that has collided with the object to be processed is diffused downward, it is possible to suppress the mist of the cleaning liquid from being diffused above the liquid processing tank.

The liquid processing apparatus according to the first aspect may further include a holding unit configured to hold the object to be processed and to be movable to a liquid processing position and a cleaning position. Thus, the object can be quickly moved to a desired position.

According to a third aspect of the present invention, there is provided a liquid processing tank configured to be capable of storing a processing liquid and performing predetermined liquid processing on a target object, and a holding unit configured to hold the target object. A liquid processing apparatus is provided, comprising: a cleaning unit that supplies a cleaning liquid to a target object after the liquid processing to perform a cleaning process; and an exhaust unit configured to exhaust an atmosphere of the liquid processing tank. You. As a result, the mist of the processing liquid and the cleaning liquid can be removed, so that the diffusion of the mist can be suppressed.

In the liquid processing apparatus according to a third aspect, in the fourth aspect,
The exhaust means may be provided with a trap as described above. This makes it possible to collect the mist of the processing liquid and the cleaning liquid to be removed by the exhaust unit, so that corrosion of the exhaust unit can be suppressed.

According to a fifth aspect of the present invention, there is provided a liquid processing tank, a holding means configured to be capable of holding the processing object with the processing surface down, and a cleaning means for cleaning the processing object. A liquid processing apparatus is provided. This makes it possible to remove the processing liquid remaining on the object after the liquid processing, thereby suppressing the diffusion of the processing liquid.

According to a fifth aspect of the present invention, in the liquid processing apparatus, the cleaning means may supply the cleaning liquid from below the object to be processed. As a result, the cleaning liquid that has collided with the object to be processed is diffused downward, so that the mist of the cleaning liquid can be prevented from diffusing above the liquid processing tank.

In the liquid processing apparatus according to the fifth or sixth aspect, the cleaning means may supply the cleaning liquid to the object to be processed at an elevation angle θ of 5 ° to 70 °. Good. This makes it possible to uniformly supply the cleaning liquid to the object to be processed and prevent the cleaning liquid from diffusing upward.

According to a fifth aspect of the present invention, in the liquid processing apparatus, the cleaning means is configured to supply the cleaning liquid to the object at a dispersion angle ω of 3 ° to 30 °. Is also good. Thus, the cleaning liquid is uniformly supplied to the object.

In the liquid processing apparatus according to any one of the fifth to eighth aspects, the holding means may be configured to be vertically movable and the object to be processed may be configured to be rotatable.
Thereby, the object to be processed can be quickly moved to a predetermined position, and uniform liquid processing and cleaning can be performed.

In the liquid processing apparatus according to any one of the first to ninth aspects, a drying means for removing the cleaning liquid for the object to be processed may be provided as in the tenth aspect. Thus, the cleaning liquid remaining on the surface of the object after cleaning can be removed, so that dripping and diffusion of the cleaning liquid can be suppressed.

In the liquid processing apparatus according to any one of claims 1 to 10,
As in the eleventh aspect, the cleaning means and the drying means may be integrally formed so that the cleaning liquid and the drying gas can be supplied alternately. This makes it possible to remove the cleaning liquid remaining in the cleaning means, thereby suppressing deterioration of the cleaning means.

The liquid processing apparatus according to any one of claims 1 to 11,
As in the twelfth aspect of the present invention, the cleaning means may use an acid or alkali solution as the cleaning liquid. Thus, not only the object to be processed can be subjected to liquid treatment with an acid or alkali solution, but also with cleaning.

In the liquid processing apparatus according to any one of claims 1 to 12,
The solution treatment tank may be a plating treatment tank. Thereby, a plating process can be performed on the object to be processed.

According to a fourteenth aspect, there is provided a liquid processing system comprising the liquid processing apparatus according to the first to thirteenth aspects, a carrier cassette station, a transport section, and a cleaning section. Accordingly, since the liquid processing apparatus capable of suppressing the above-described contamination and diffusion is provided, it is possible to stably manufacture an object to be processed.

According to a fifteenth aspect, a liquid processing step of bringing a processing object into contact with a processing liquid to perform predetermined liquid processing on the processing object, a step of separating the processing object from the processing liquid, And a step of supplying a cleaning liquid from underneath to clean the object to be processed. This makes it possible to remove the processing liquid remaining on the object after the liquid processing, thereby suppressing the diffusion of the processing liquid. Also, since the cleaning liquid that has collided with the object to be processed is diffused downward,
The mist of the cleaning liquid can be suppressed from diffusing above the liquid processing tank.

According to the sixteenth aspect, the object to be processed is brought into contact with the processing liquid to perform a predetermined liquid treatment on the object to be processed, a step of cleaning with the cleaning liquid, a step of performing the cleaning step simultaneously or simultaneously with the cleaning step. And evacuation of the atmosphere in the liquid processing apparatus. Thereby, since the mist of the cleaning liquid generated in the cleaning step can be effectively removed, the diffusion of the mist can be suppressed.

According to the seventeenth aspect, a step of holding the object to be processed, a liquid processing step of bringing the object to be processed into contact with the processing liquid, and performing a predetermined liquid treatment on the object to be processed, , A step of removing the treatment liquid from the surface of the object, and a step of supplying a cleaning liquid from below the object to clean the object. Is done. This makes it possible to remove the processing liquid remaining on the object after the liquid processing, thereby suppressing the diffusion of the processing liquid. Further, since the cleaning liquid that has collided with the object to be processed is diffused downward, it is possible to suppress the mist of the cleaning liquid from being diffused above the liquid processing tank.

In the liquid processing method according to any one of the fifteenth to seventeenth aspects, in the liquid processing method according to the eighteenth aspect, the step of holding the object may be performed with the processing surface of the object facing down. . Accordingly, the cleaning liquid that has collided with the object to be processed is diffused downward, so that the mist of the cleaning liquid can be suppressed from being diffused above the liquid processing tank.

According to the nineteenth aspect, a liquid processing step of contacting a processing object with a processing surface of the processing object facing down with a processing liquid to perform predetermined liquid processing on the processing object; Are separated from each other, and a step of supplying a cleaning liquid from below the object to be cleaned and cleaning the object to be processed is provided. This makes it possible to remove the processing liquid remaining on the object after the liquid processing, thereby suppressing the diffusion of the processing liquid. Further, since the cleaning liquid that has collided with the object to be processed is diffused downward, it is possible to suppress the mist of the cleaning liquid from being diffused above the liquid processing tank.

According to claim 20, claims 15 to 19 are provided.
The liquid processing method according to the above, further comprising, after the cleaning step, a drying step of removing a cleaning liquid of the object to be processed. Thus, the cleaning liquid remaining on the surface of the object after cleaning can be removed.

[0026]

Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are a side view and a plan view showing the overall configuration of a plating system 10 of the present invention. The plating system 10 has a configuration in which processing units are arranged in multiple stages. FIG. 1 is a diagram of the plating system 10 viewed from a side, and FIG. 2 is a diagram of a first floor portion of the plating system 10 viewed from above.

The plating system 10 includes a carrier cassette station 20, a transport section 30, a plating section 40, a cleaning section 50, a buffer section 60, and a transport arm 70. In the first stage of the plating system 10, for example, four units of the plating unit 40 are arranged, and in the second stage, two units of the plating unit 40 and two units of the cleaning unit 50 are arranged. The cleaning unit 50 is arranged at a position adjacent to the transport unit.

At the carrier cassette station 20,
A plurality of objects to be processed, here, wafers W, are stored in the carrier cassette 21 in units of, for example, 25 wafers, and the carrier cassette 21 can be loaded or unloaded from outside. The transfer unit 30 includes a transfer robot 31 and is configured to be able to transfer the wafer W in the carrier cassette 21.
In the plating section 40, the wafer W can be plated.
The cleaning unit 50 is configured to be able to clean the entire wafer surface after the plating process. In the buffer unit 60, the wafer W transferred from the transfer unit can be temporarily placed, and in the transfer arm 70, the wafer W is transferred to the plating unit 40.
The wafer W is transported to the cleaning unit 50, and the wafer W can be inverted.

FIGS. 3 and 4 are schematic sectional views showing one embodiment of the plating apparatus constituting the plating section 40 according to the embodiment of the liquid processing apparatus of the present invention. The plating section 40 is a fan filter unit (FFU) 8
0, holding means 90, and a liquid processing tank 100.

The FFU 80 includes a filter (not shown) capable of trapping particles or specific chemical substances, and a fan (not shown) for sending gas. This FF
U80 is configured to supply clean air or nitrogen (N ₂ ) gas to the plating section 40.

The time keeping means 90 includes a cathode electrode 91, a shield part 95, a rotating mechanism 92 for rotating the wafer W,
A vertical moving mechanism 93 for moving the wafer W in the vertical direction;
And a support portion 94. This time keeping means 90
The processing surface of the wafer W is held down, and only the processing surface of the wafer W is brought into contact with the plating solution.

The solution processing tank 100 is composed of an inner plating tank 130 and an outer plating tank 140. The plating inner tank 130
An anode electrode 110 for passing a current through the plating solution, and a plating solution supply port 120 for supplying the plating solution are provided. The outer plating bath 140 is configured such that the plating solution overflowing from the inner plating bath 130 flows in.
The discharge line 150 is configured to discharge the plating solution flowing into the outer plating bath 140. The liquid management unit 160 is configured to keep the discharged plating liquid at a constant composition and a constant temperature to remove bubbles. The pump 170 is configured to send the plating solution to the plating solution supply port 120 and circulate the plating solution.

Further, a first exhaust unit 180 is provided in the outer plating bath 140, and a second exhaust unit 181 is provided above the outer plating bath 140. Further, the first exhaust unit 180 is provided with a trap 187 capable of collecting a liquid and a gas.

The first exhaust means 180 is an outer plating tank 140
The inside atmosphere can be exhausted by an exhaust pump 185. By the first exhaust means 180, the outer plating bath 14
Mist such as a plating solution or a cleaning solution, which is contained in a large amount in the atmosphere of 0, is discharged, and contamination due to diffusion of the mist such as the plating solution or the cleaning solution can be suppressed.

The second exhaust means 181 is provided in the plating section 4.
Air or N ₂ supplied from FFU 80 at the top of
The gas is exhausted by the exhaust pump 185 to form a constant gas flow in the plating section 40. Second
By means of the exhaust means 181, mist such as a plating solution and a cleaning liquid, which are largely contained in the atmosphere in the plating section 40, can be discharged, and contamination due to diffusion of the mist such as the plating solution and the cleaning liquid can be suppressed.

The trap 1 provided in the first exhaust means 180
87 is configured to form a water flow in a certain direction in the trap 187, and mist or gas is made to collide with the water flow to collect the mist or gas. Thus, the exhaust line 183 and the exhaust pump 185 by the acidic mist
Corrosion can be prevented.

The cleaning nozzle 20 as the cleaning means of the present invention
0, and the drying nozzle 210 as a drying means are shown in FIGS. 3, 4 and 5, and will be described below. First, FIG.
As shown in FIG. 4 and FIG. 4, a cleaning nozzle 200 configured to spray pure water as a cleaning liquid is provided in the outer plating bath 140. The cleaning nozzle 200 moves the processing surface of the wafer W
A constant spray angle of the cleaning liquid from below the position of the wafer W
(Elevation angle θ) and ejection range (dispersion angle ω). Since the cleaning liquid sprayed from below collides with the object to be processed and diffuses downward, the mist of the cleaning liquid can be suppressed from diffusing above the liquid processing tank. Injection angle (elevation angle θ)
Is 5 ° to 70 ° obliquely downward from the plating surface
Is preferable. Further, the injection range (dispersion angle ω) is preferably set to 3 ° to 30 °. As a result, a uniform cleaning liquid can be supplied to the processing surface, and uniform cleaning can be performed. With this cleaning means, the processing liquid remaining on the wafer W after the plating processing can be removed, so that the diffusion of the processing liquid can be suppressed.

In the present invention, pure water is used as the cleaning solution. However, if pure water is used, the drainage after cleaning is a mixture of the plating solution and pure water. Even when mixed with the plating solution in the tank 140, the composition of the plating solution does not change much. Therefore, the drainage of the cleaning liquid can be poured into the inner plating bath 130 or the outer plating bath 140.

FIG. 5 shows the outer plating bath 140 viewed from above.
It is a schematic diagram. N which is a drying gas _TwoCan be sprayed
Drying nozzle 210 is provided in the outer plating bath 140.
You. The drying gas is supplied from the drying nozzle 210 to the position of the wafer W.
It has been adjusted to inject from below. This dry hand
The step removes the cleaning liquid remaining on the wafer surface after cleaning.
The diffusion of the cleaning liquid can be suppressed.
Also, forcibly drying, shorter than natural drying
Drying, leading to an improvement in throughput.

Washing nozzle 200 and drying nozzle 210
Are arranged so as to surround the annular plating outer tank 140. Since the positions of the cleaning nozzle 200 and the drying nozzle 210 are arranged at positions where the cleaning liquid or the drying gas can be uniformly sprayed on the surface of the wafer, more uniform cleaning and drying can be performed.

In the plating system 10 provided with the plating section 40, the mist diffusion of the plating solution and the cleaning solution can be suppressed. As a result, a stable semiconductor device can be manufactured.

Next, the operation of the illustrated embodiment will be described. A carrier cassette 21 containing a plurality of wafers W is placed on the carrier cassette station 20 shown in FIG. The carrier cassette 21 is moved by the transfer robot 31.
The wafer W is taken out. The taken-out wafer W is transferred to the buffer unit 60 and placed thereon. The mounted wafer W is inverted by the transfer arm 70 so that the processing surface of the wafer W is turned down, and then transferred to the plating unit 40.

After the holding means 90 shown in FIG. 3 is moved to the transfer position of the wafer W (see FIG. 6A), it is turned over by the transfer arm 70, and the transferred wafer W is placed with the processing surface down. To be held by the holding means 90. Next, the plating solution is sent to the plating inner tank 130 through the plating solution supply port 120 by the pump 170 to overflow. The holding means 90 is moved to the plating position (see FIG. 6B) to bring the wafer processing surface into contact with the plating solution. A current is passed between the cathode electrode 91 and the anode electrode 110, and the plating process is performed on the wafer processing surface while rotating the wafer W from 0 rpm to 300 rpm. After plating,
The plating solution is withdrawn from the inner plating bath 130 while the plating solution overflows. While overflowing the plating solution, after extracting the plating solution, or while extracting the plating solution, the wafer W is moved from 0 rpm to 200 at the plating position (see FIG. 6B).
Rotate at rpm to remove plating solution remaining on the wafer processing surface.

Next, the holding means 90 is moved to the cleaning position (FIG. 6C).
), And pure water as a cleaning liquid is sprayed from below onto the wafer processing surface from the cleaning nozzle 200, and cleaning is performed while rotating the wafer W from 0 rpm to 200 rpm. By this cleaning, the plating solution on the surface of the wafer W is removed, so that it is possible to prevent contamination in the plating system due to dripping and diffusion of the plating solution occurring during the subsequent transfer.

After the cleaning, N ₂ gas as a drying gas is jetted from the drying nozzle 210 to the wafer processing surface to remove the cleaning liquid remaining on the wafer processing surface. Since the cleaning liquid remaining on the wafer processing surface is removed by the drying, contamination of the plating processing system due to dripping and diffusion of the plating liquid occurring during the subsequent transfer can be prevented. At this time, it is preferable that the wafer processing surface is not completely dried, and a slight layer of the cleaning liquid is left. This can suppress the progress of oxidation of the Cu layer formed on the wafer processing surface. After this drying step, the holding means 90 is moved to the transport position (FIG. 6).
(See (a)), and the transfer arm 70 unloads the wafer W.

As shown in FIGS. 1 and 2, the wafer W unloaded from the plating section 40 is transferred by the transfer arm 70.
It is transported to the cleaning unit 50. In the cleaning section 50, the entire wafer surface is cleaned and dried. The washed and dried wafer W is transferred by the transfer robot 31 to the carrier cassette station 20.
To the carrier cassette 21. By the above operation, the plating process is performed on the wafer W. The plated wafer W is transferred to the next step.

FIG. 7 shows a second embodiment of the cleaning means of the liquid processing apparatus of the present invention. Cleaning nozzle 201 of FIG.
Is configured to be able to advance and retreat from the outer plating bath, and the spray angle (elevation angle θ) and spray range (dispersion angle ω) of the cleaning liquid can be made variable. Thereby, more uniform cleaning can be performed.

Next, a third embodiment of the cleaning means of the liquid processing apparatus of the present invention is shown in FIG. In the embodiment of FIG.
From 00, both cleaning liquid and drying gas can be ejected. When the cleaning liquid is injected from the nozzle 300, the cleaning liquid is supplied from the cleaning liquid supply unit 310 through the supply pipe 330. When injecting the drying gas, the drying gas is supplied from the drying gas supply unit 320 through the supply pipe 330. When this nozzle is used, the cleaning liquid is supplied from the cleaning liquid supply unit 310 when the cleaning liquid is injected, the line is switched when the drying gas is injected, and the drying gas is supplied from the drying gas supply unit 320. Thus, cleaning and drying can be performed with one nozzle. Since the cleaning liquid remaining in the supply pipe 330 is pushed out by the drying gas and can be removed, deterioration of the pipe can be prevented, and maintenance becomes easy.

In the first embodiment of the present invention, as shown in FIG. 5, a plurality of washing nozzles 200 and drying nozzles 210 are arranged on the circumference of the outer plating upper part 140. There is no need to provide a plurality of nozzles 210. If the cleaning liquid and the drying gas are uniformly sprayed on the wafer surface, desired cleaning and drying can be achieved if at least one nozzle is provided.

Further, in the first embodiment of the present invention, the nozzles having the same ejection angle and the same ejection range are used.
May be sprayed at different locations.

In the first embodiment, FIGS. 3, 4 and 5
As shown in the figure, the cleaning nozzle 200 and the drying nozzle 210 are provided in the outer plating tank 140,
0 and the drying nozzle 210 may be provided in the inner plating bath 130. The cleaning nozzle 200 and the drying nozzle 210 do not necessarily need to be at the same site,
30 may be provided in the outer plating bath 140.

In the first embodiment, pure water is used as the cleaning liquid. However, the cleaning liquid is not limited to pure water, and a cleaning liquid such as an acid or alkali solution can be used. By using these cleaning liquids, the wafer W after the plating process can be held by the holding means 9.
With the value held at 0, the formed plating film can be further subjected to a liquid treatment such as etching using an acid and alkali solution. Thereby, the plating section 40 can have a part of the function of the cleaning section,
This contributes to an improvement in throughput.

In the first embodiment, N ₂ is used as the drying gas. However, as long as the drying gas can remove the cleaning liquid, for example, isopropyl alcohol, argon gas,
Other gases or liquids such as helium gas and clean air may be used.

In the processing operation, in the first embodiment of the present invention, after the plating treatment, the plating solution is extracted from the inner plating bath 130 and the outer plating bath 140, and then the cleaning is performed. In order to sometimes separate the cleaning liquid drainage from the plating liquid, it is more preferable to divide the liquid flow path into a plating liquid supply path, a plating liquid discharge path, and a cleaning liquid drainage discharge path. As a result, it is possible to prevent mixing of the cleaning solution drainage and the plating solution, and to maintain the plating solution at a constant composition.
Stable processing can be repeated.

In addition, the wafer W during cleaning and drying may be caused to revolve, move up and down, and swing as well as rotate (self-rotate). In particular, by injecting the drying gas to the center of rotation of the wafer, the cleaning liquid remaining at the center of rotation of the wafer where no centrifugal force acts can be removed, so that the wafer W can be uniformly cleaned and dried.

After the wafer W has been carried out of the holding means 90, the holding means 90 is washed by the cleaning means and the drying means.
May be washed and dried. The holding means 90 has a wafer
There is a shield portion 95 for preventing the plating solution from flowing around the edge portion and the back surface of the W, and a cathode electrode 91 for flowing an electric current (see FIG. 4). Since the plating solution is attached, these are cleaned. . Thereby, the corrosion of the holding means 90 by the plating solution or the cleaning liquid can be prevented, and the entire holding means 90 can be cleaned.
As a result, the plating solution and the cleaning solution attached to the holding means 90 can be removed. Thereby, corrosion of the entire holding means 90 by the plating solution or the cleaning solution can be prevented. More preferably, the cleaning of the holding unit 90 is performed before the wafer W subjected to the plating process, washed and dried is carried out of the holding unit 90, and the wafer W to be subjected to the next plating process is carried into the holding unit 90. As a result, a decrease in throughput can be prevented.

It should be noted that the liquid processing apparatus and the liquid processing method of the present invention are not limited to the above-described embodiment, but include a pre-treatment for increasing the wettability of the wafer W or a wafer W
It can be applied to other liquid treatments such as an oxide film removal treatment of a seed layer.

[0058]

As described above, according to the present invention,
It is possible to suppress the diffusion of the contamination source and improve the yield in semiconductor manufacturing. Further, the present invention has an excellent effect that the semiconductor device can be stably manufactured by suppressing contamination and corrosion in the semiconductor manufacturing apparatus and by suppressing contamination and corrosion in the semiconductor manufacturing line.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a plating system of the present invention.

FIG. 2 is a schematic configuration diagram of a first stage portion of the plating system shown in FIG. 1 as viewed from above.

FIG. 3 is a schematic configuration diagram of a plating section according to the present invention.

FIG. 4 is a schematic configuration diagram of a cleaning unit according to the first embodiment of the present invention.

FIG. 5 is a schematic configuration diagram of a plating outer tank according to the first embodiment of the present invention as viewed from above.

FIG. 6A shows a transfer position of a wafer W, and FIG.
6B is a diagram illustrating a plating position of the wafer W, and FIG. 6C is a diagram illustrating a cleaning position of the wafer W.

FIG. 7 is a schematic configuration diagram of a cleaning unit according to a second embodiment of the present invention.

FIG. 8 is a schematic configuration diagram of a cleaning unit according to a third embodiment of the present invention.

[Explanation of symbols]

 W wafer 10 plating processing system 20 carrier cassette station 21 carrier cassette 30 transport unit 31 transport robot 40 plating process unit 50 cleaning unit 60 buffer unit 70 transport arm 80 fan filter unit 90 holding means 91 cathode electrode 92 rotating mechanism 93 vertical movement mechanism 94 Support part 95 Shield part 100 Liquid treatment tank 110 Anode electrode 120 Plating solution supply port 130 Inner plating tank 140 Outer plating tank 150 Drain line 160 Liquid management unit 170 Pump 180 First exhaust means 181 Second exhaust means 183 Exhaust line 185 Exhaust pump 187 Trap 200 Cleaning nozzle 210 Drying nozzle 300 Nozzle 310 Cleaning liquid supply unit 320 Drying gas supply unit 330 Supply pipe

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 651 H01L 21/304 651L 21/306 21/306 J

Claims (20)

[Claims] A liquid processing tank configured to store a processing liquid so as to perform liquid processing on the object to be processed, and a cleaning unit for cleaning the object to be processed with the liquid; A liquid processing apparatus configured to supply a cleaning liquid from a lower side of a body. 2. The liquid processing apparatus according to claim 1, further comprising a holding unit configured to hold the object to be processed and to be movable to a liquid processing position and a cleaning position. 3. A liquid processing tank configured to be capable of storing a processing liquid and performing predetermined liquid processing on an object to be processed, holding means configured to be capable of holding the object to be processed, and an object to be processed after the liquid processing. A liquid processing apparatus comprising: a cleaning unit that supplies a cleaning liquid to a body to perform a cleaning process; and an exhaust unit configured to exhaust an atmosphere of the liquid processing tank. 4. A trap provided in said exhaust means so as to recover liquid and gas.
Liquid processing equipment. 5. A liquid processing apparatus comprising: a liquid processing tank; holding means configured to be able to hold the processing object with the processing surface down; and cleaning means for cleaning the processing object. . 6. A liquid processing apparatus according to claim 5, wherein said cleaning means is configured to supply a cleaning liquid from below the object to be processed. 7. The liquid processing apparatus according to claim 5, wherein the cleaning means supplies the cleaning liquid to the object at an elevation angle θ of 5 ° to 70 °. 8. The liquid processing apparatus according to claim 5, wherein the cleaning means supplies the cleaning liquid to the object at a dispersion angle ω of 3 ° to 30 °. 9. The liquid processing apparatus according to claim 5, wherein said holding means is configured to be movable up and down, and is configured to be able to rotate the object to be processed at a predetermined speed. 10. A drying apparatus for supplying a predetermined gas or liquid to the object to be processed.
10. The liquid processing apparatus according to any one of items 1 to 9. 11. The liquid processing apparatus according to claim 10, wherein said cleaning means and said drying means are integrally formed so that a cleaning liquid and a drying gas can be supplied alternately. 12. The liquid processing apparatus according to claim 1, wherein said cleaning means uses an acid or alkali solution as a cleaning liquid. 13. The liquid processing apparatus according to claim 1, wherein the liquid processing tank is a plating tank. 14. A liquid processing system comprising: the liquid processing apparatus according to claim 1; a carrier cassette station; a transport unit; and a cleaning unit. 15. A liquid processing step of bringing a processing object into contact with a processing liquid to perform predetermined liquid processing on the processing object, a step of separating the processing object from the processing liquid, and supplying a cleaning liquid from below the processing object. And a cleaning step of cleaning the object to be processed. 16. A liquid processing step of bringing a target object into contact with a processing liquid to perform a predetermined liquid treatment on the target object, a cleaning step of cleaning with a cleaning liquid, and a cleaning step at least simultaneously with or after the cleaning step. A liquid processing method for performing liquid processing on an object to be processed, comprising: an exhaust step of exhausting an atmosphere in the processing apparatus. A step of holding the object to be processed, a liquid processing step of bringing the object into contact with the processing liquid and performing a predetermined liquid treatment on the object, and a step of separating the object and the processing liquid from each other; A liquid processing method for performing liquid processing on a target object, comprising: a step of removing a processing liquid from a surface of the target object; and a step of supplying a cleaning liquid from below the target object to clean the target object. 18. The method according to claim 15, wherein in the step of holding the object to be processed, liquid processing is performed on the object to be processed held with the processing surface of the object to be turned down. Liquid treatment method. 19. A liquid processing step of bringing a processing surface of a processing object down with a processing liquid into contact with the processing liquid to perform a predetermined liquid processing on the processing object, and separating the processing liquid from the processing object. And a step of supplying a cleaning liquid from below the object to be cleaned and cleaning the object to be processed. 20. The liquid processing method according to claim 15, further comprising, after the cleaning step, a drying step of removing a cleaning liquid of the object to be processed.