JP4067076B2 - Liquid processing method and liquid processing apparatus - Google Patents

Description

【００４４】
上記実験の結果、ウエハＷの回転数が３５ｒｐｍのときには、ホールＨ内のポリマＰは完全に除去できたが、ウエハＷ表面にはポリマＰが残っていた。また、ウエハＷの回転数が１００ｒｐｍのときは、ウエハＷ表面のポリマＰは完全に除去でき、ホールＨ内のポリマＰはほぼ除去できた。また、ウエハＷの回転数が２００ｒｐｍのときには、ウエハＷ表面のポリマＰはほぼ除去することができたが、ホールＨ内のポリマＰは残っていた。また、ウエハＷの回転数が８００ｒｐｍのときは、ウエハＷ表面及びホールＨ内のいずれにもポリマＰが残っていた。したがって、ホールＨ内に付着するポリマＰを除去するには、ウエハＷの回転数を３５ｒｐｍの低速回転とする方がよく、また、ウエハＷ表面に付着するポリマＰを除去するには、ウエハＷの回転数を１００〜２００ｒｐｍの中速回転とする方がよいことが判った。
【００４５】
また、粘度の異なる薬液Ｌを用いてポリマ除去性能とウエハ回転数の関係を調べたところ、ホールＨ内に付着するポリマＰを完全に除去するには、ウエハＷの回転数が１〜１５０ｒｐｍ｛ホールＨ内の形状や深さによっては、ウエハＷを停止状態とする方が有効な場合もある｝の低速回転である方がよく、また、ウエハＷ表面（溝Ｇを含む）に付着するポリマＰを除去するには、ウエハＷの回転数が１００〜５００ｒｐｍの中速回転である方がよいことが判った。なお、ウエハＷ表面に付着するポリマＰ及び薬液Ｌを遠心力で振り切るには、ウエハＷの回転数が５００〜３０００ｒｐｍであればよい。
【００４６】
上記実施形態ではウエハＷの枚葉処理の場合について説明したが、複数枚のウエハＷを同時に上述と同様に処理することができる。以下に、複数枚のウエハＷを同時に洗浄・乾燥処理する場合の実施形態について、図１１〜図１３を参照して説明する。
【００４７】
図１０は、液処理装置の概略平面図、図１１は、この発明に係る液処理装置の第二実施形態を示す概略構成図、図１２は、上記液処理装置の要部断面図、図１３は、上記液処理装置の配管系統を示す概略配管図である。
【００４８】
上記洗浄・乾燥処理システムは、図１０に示すように、ウエハＷの複数枚例えば２５枚を鉛直状態に収納する容器例えばキャリア１００を搬入、搬出するための搬入・搬出部２００と、ウエハＷを液処理すると共に乾燥処理する処理部３００と、搬入・搬出部２００と処理部３００との間に位置してウエハＷの受渡し、位置調整及び姿勢変換等を行うインターフェース部４００とで主に構成されている。なお、搬入・搬出部２００とインターフェース部４００の側方には、空のキャリア１００を一時収納するキャリアストック５００と、キャリア１００をクリーニングするキャリアクリーナ６００が配設されている。
【００４９】
上記搬入・搬出部２００は、洗浄・乾燥処理装置の一側端部に配置されており、キャリア搬入部２０１とキャリア搬出部２０２が併設されている。
【００５０】
上記インターフェース部４００には、キャリア載置台７００が配置されており、このキャリア載置台７００と、搬入・搬出部２００との間には、キャリア搬入部２０１から受け取ったキャリア１００をキャリア載置台７００上又はキャリアストック５００に搬送し、キャリア載置台７００上のキャリア１００をキャリア搬出部２０２又はキャリアストック５００へ搬送するキャリア搬送手段８００が配設されている。また、インターフェース部４００には、処理部３００と連なる搬送路９００が設けられており、この搬送路９００にウエハ搬送手段例えばウエハ搬送チャック１０が移動自在に配設されている。このウエハ搬送チャック１０は、キャリア載置台７００上のキャリア１００内から未処理のウエハＷを受け取った後、処理部３００に搬送し、処理部３００にて処理された処理済みのウエハＷをキャリア１００内に搬入し得るように構成されている。
【００５１】
一方、上記処理部３００には、ウエハＷに付着するレジストやポリマ等を除去するこの発明に係る液処理装置２０（以下に処理装置２０という）が配設されている。以下に、この発明に係る処理装置について詳細に説明する。
【００５２】
上記処理装置２０は、図１１に示すように、ウエハＷを保持する回転可能な保持手段例えばロータ２１と、このロータ２１を回転駆動する回転駆動手段であるモータ２２と、ロータ２１にて保持されたウエハＷを包囲する複数例えば２つの処理室（第１の処理室，第２の処理室）内チャンバ２３，外チャンバ２４と、これら内チャンバ２３又は外チャンバ２４内に収容されたウエハＷに対して処理流体例えばレジスト剥離液，ポリマ除去液等の薬液の供給手段５０、この薬液の溶剤例えばイソプロピルアルコール（ＩＰＡ）の供給手段６０、リンス液例えば純水の供給手段（リンス液供給手段）７０又は例えば窒素（Ｎ₂）等の不活性ガスや清浄空気等の乾燥気体の供給手段８０と、内チャンバ２３を構成する内筒体２５と外チャンバ２４を構成する外筒体２６をそれぞれウエハＷの包囲位置とウエハＷの包囲位置から離れた待機位置に切り換え移動する移動手段例えば第１，第２のシリンダ２７，２８及びウエハＷを上記ウエハ搬送チャック１０から受け取ってロータ２１に受け渡すと共に、ロータ２１から受け取ってウエハ搬送チャック１０（図１０参照）に受け渡す被処理基板受渡手段例えばウエハ受渡ハンド２９とで主要部が構成されている。
【００５３】
上記のように構成される処理装置２０におけるモータ２２、処理流体の各供給手段５０，６０，７０，８０の供給部、ウエハ受渡ハンド２９等は制御手段例えば中央演算処理装置３０（以下にＣＰＵ３０という）によって制御されている。
【００５４】
上記ロータ２１は、水平に配設されるモータ２２の駆動軸２２ａ（図１２参照）に片持ち状に連結されて、ウエハＷの処理面が鉛直になるように保持し、水平軸を中心として回転可能に形成されている。この場合、ロータ２１は、モータ２２の駆動軸２２ａにカップリング２２ｂを介して連結される回転軸２１Ａを有する第１の回転板２１ａと、この第１の回転板２１ａと対峙する第２の回転板２１ｂと、第１及び第２の回転板２１ａ，２１ｂ間に架設される複数例えば４本の固定保持棒３１と、これら固定保持棒３１に列設された保持溝（図示せず）によって保持されたウエハＷの上部を押さえる図示しないロック手段及びロック解除手段によって押え位置と非押え位置とに切換移動する一対の押え棒３２とで構成されている。また、ロータ２１の回転軸２１Ａは、ベアリング３３を介して第１の固定壁３４に回転可能に支持されており、第１の固定壁側のベアリング３３に連接するラビリンスシール３５によってモータ２２側に発生するパーティクル等が処理室内に侵入しないように構成されている（図１２参照）。なお、モータ２２は、第１の固定壁３４に連設される固定筒体３６内に収納されている。また、モータ２２は、予めＣＰＵ３０に記憶されたプログラムに基づいて所定の回転数をを選択的に行い得るように制御されている。
【００５５】
なお、モータ２２は高速回転と低速回転との切り換えが何回も行われることによって過熱される虞があるので、モータ２２には、過熱を抑制するための冷却手段３７が設けられている。この冷却手段３７は、図１１に示すように、モータ２２の周囲に配管される循環式冷却パイプ３７ａと、この冷却パイプ３７ａの一部と冷却水供給パイプ３７ｂの一部を配設して、冷却パイプ３７ａ内に封入される冷媒液を冷却する熱交換器３７ｃとで構成されている。この場合、冷媒液は、万一漏洩してもモータ２２が漏電しないような電気絶縁性でかつ熱伝導性の良好な液、例えばエチレングリコールが使用されている。また、この冷却手段３７は、図示しない温度センサによって検出された信号に基づいて作動し得るように上記ＣＰＵ３０によって制御されている。なお、冷却手段３７は必ずしも上記のような構造である必要はなく、例えば空冷式あるいはペルチェ素子を用いた電気式等任意のものを使用することができる。
【００５６】
一方、処理室例えば内チャンバ２３（第１の処理室）は、第１の固定壁３４と、この第１の固定壁３４と対峙する第２の固定壁３８と、これら第１の固定壁３４及び第２の固定壁３８との間にそれぞれ第１及び第２のシール部材４０ａ，４０ｂを介して係合する内筒体２５とで形成されている。すなわち、内筒体２５は、移動手段である第１のシリンダ２７の伸張動作によってロータ２１とウエハＷを包囲する位置まで移動されて、第１の固定壁３４との間に第１のシール部材４０ａを介してシールされると共に、第２の固定壁３８との間に第２のシール部材４０ｂを介してシールされた状態で内チャンバ２３（第１の処理室）を形成する（図１１及び図１２参照）。また、内筒体２５は、第１のシリンダ２７の収縮動作によって固定筒体３６の外周側位置（待機位置）に移動されるように構成されている。この場合、内筒体２５の先端開口部は第１の固定壁３４との間に第２のシール部材４０ｂを介してシールされ、内筒体２５の基端部は固定筒体３６の中間部に周設されたフランジ部３６ａに第１のシール部材４０ａを介してシールされて、内チャンバ２３内に残存する薬液の雰囲気が外部に漏洩するのを防止している。
【００５７】
また、外チャンバ２４（第２の処理室）は、待機位置に移動された内筒体２５との間に第１のシール部材４０ａを介在する第１の固定壁３４と、第２の固定壁３８と、第２の固定壁３８と内筒体２５との間にそれぞれ第３及び第４のシール部材４０ｃ，４０ｄを介して係合する外筒体２６とで形成されている。すなわち、外筒体２６は、移動手段である第２のシリンダ２８の伸張動作によってロータ２１とウエハＷを包囲する位置まで移動されて、第２の固定壁３８との間に第３のシール部材４０ｃを介してシールされると共に、外筒体２６の基端部外方に位置する第４のシール部材４０ｄを介してシールされた状態で外チャンバ２４（第２の処理室）を形成する。また、第２のシリンダ２８の収縮動作によって固定筒体３６の外周側位置（待機位置）に移動されるように構成されている。この場合、外筒体２６と内筒体２５の基端部間には第４のシール部材４０ｄが介在されて、シールされている。したがって、内チャンバ２３の内側雰囲気と、外チャンバ２４の内側雰囲気とは、互いに気水密な状態に離隔されるので、両チャンバ２３，２４内の雰囲気が混じることなく、異なる処理流体が反応して生じるクロスコンタミネーションを防止することができる。
【００５８】
なお、上記第１ないし第４のシール部材４０ａ〜４０ｄは、シールする対象物の一方に膨隆可能に装着される例えばエチレン・プロピレン・ジエン・ゴム（ＥＰＤＭ）やカルレッツ（商品名）等の耐熱性，耐薬品性，耐候性に富む合成ゴム製の中空パッキン内に圧縮空気を封入するシール機構にて形成されている。
【００５９】
上記のように構成される内筒体２５と外筒体２６は共に一端に向かって拡開するテーパ状に形成されており、同一水平線上に対峙する第１の固定壁３４、第２の固定壁３８及び装置側壁３９に架設された互いに平行な複数例えば３本のガイドレール（図示せず）に沿って摺動可能に取り付けられており、上記第１及び第２のシリンダ２７，２８の伸縮動作によって同心上に互いに出没可能及び重合可能に形成されている。このように内筒体２５及び外筒体２６を、一端に向かって拡開するテーパ状に形成することにより、処理時に内筒体２５又は外筒体２６内でロータ２１が回転されたときに発生する気流が拡開側へ渦巻き状に流れ、内部の薬液等が拡開側へ排出し易くすることができる。また、内筒体２５と外筒体２６とを同一軸線上に重合する構造とすることにより、内筒体２５と外筒体２６及び内チャンバ２３及び外チャンバ２４の設置スペースを少なくすることができると共に、装置の小型化が図れる。
【００６０】
上記内筒体２５及び外筒体２６はステンレス鋼にて形成されている。また、内筒体２５の外周面には例えばポリテトラフルオロエチレン（テフロン）等の断熱層が形成されており、この断熱層によって内チャンバ２３内で処理に供される薬液及び薬液の蒸気が冷えるのを防止し得るように構成されている。
【００６１】
一方、上記処理流体供給手段のうち、薬液例えばポリマ除去液の供給手段５０は、図１１〜図１３に示すように、内筒体２５内に取り付けられる薬液供給ノズル５１と、薬液供給部５２と、この薬液供給ノズル５１と薬液供給部５２とを接続する薬液供給管路５３に介設されるポンプ５４、フィルタ５５、温度コントローラ５６、開閉弁５７を具備してなる。この場合、薬液供給部５２は、薬液供給源５８と、この薬液供給源５８から供給される新規の薬液を貯留する薬液供給タンク５２ａと、処理に供された薬液を貯留する循環供給タンク５２ｂとで構成されており、両薬液供給タンク５２ａ，５２ｂには、上記内チャンバ２３の拡開側部位の下部に設けられた第１の排液ポート４１に第１の排液管４２が接続され、第１の排液管４２には、図示しない切換弁（切換手段）を介して循環管路９０が接続されている。なお、内チャンバ２３の拡開側部位の上部には、第１の排気ポート４３が設けられており、この第１の排気ポート４３には、図示しない開閉弁を介設した第１の排気管４４が接続されている。また、両供給タンク５２ａ，５２ｂの外部には温度調整用ヒータ５２ｃが配設されて、供給タンク５２ａ，５２ｂ内の薬液が所定の温度に維持されるようになっている。また、薬液供給ノズル５１は、ロータ２１にて保持された複数例えば２５枚のウエハＷ全体に均一に薬液を供給し得るように、最側端のウエハＷの外方及び各ウエハＷ間に位置する２６個のノズル孔（図示せず）を有するシャワーノズルにて形成されており、かつ各ノズル孔から薬液が略扇形状に噴射されるように構成されている。したがって、薬液供給ノズル５１のノズル孔から、ロータ２１と共に回転するウエハに向かって薬液を供給することにより、ロータ２１に保持された複数例えば２５枚のウエハＷに均一に薬液を供給することができる。
【００６２】
薬液の溶剤例えばＩＰＡの供給手段６０は、図１３に示すように、内筒体２５内に取り付けられる上記薬液供給ノズルを兼用する供給ノズル５１（以下に薬液供給ノズル５１で代表する）と、溶剤供給部６１と、この供給ノズル５１と溶剤供給部６１とを接続するＩＰＡ供給管路６２に介設されるポンプ５４Ａ、フィルタ５５Ａ、ＩＰＡ供給弁６３を具備してなる。この場合、溶剤供給部６１は、溶剤例えばＩＰＡの供給源６４と、このＩＰＡ供給源６４から供給される新規のＩＰＡを貯留するＩＰＡ供給タンク６１ａと、処理に供されたＩＰＡを貯留する循環供給タンク６１ｂとで構成されており、両ＩＰＡ供給タンク６１ａ，６１ｂには、上記内チャンバ２３の拡開側部位の下部に設けられた第１の排液ポート４１に接続する第１の排液管４２に図示しない切換弁（切換手段）を介して循環管路９０が接続されている。
【００６３】
一方、リンス液例えば純水の供給手段７０は、図１１〜図１３に示すように、第２の固定壁３８に取り付けられる純水供給ノズル７１と、純水供給源７２と、純水供給ノズル７１と純水供給源７２とを接続する純水供給管路７３に介設される供給ポンプ７４、純水供給弁７５とを具備してなる。この場合、純水供給ノズル７１は、内チャンバ２３の外側に位置すると共に、外チャンバ２４の内側に位置し得るように配設されており、内筒体２５が待機位置に後退し、外筒体２６がロータ２１とウエハＷを包囲する位置に移動して外チャンバ２４を形成した際に、外チャンバ２４内に位置して、ウエハＷに対して純水を供給し得るように構成されている。
【００６４】
また、外チャンバ２４の拡開側部位の下部には、第２の排液ポート４５が設けられており、この第２の排液ポート４５には、図示しない開閉弁を介設した第２の排液管４６が接続されている。なお、第２の排液管４６には、純水の比抵抗値を検出する比抵抗計４７が介設されており、この比抵抗計４７によってリンス処理に供された純水の比抵抗値を検出し、その信号を上記ＣＰＵ３０に伝達するように構成されている。したがって、この比抵抗計４７でリンス処理の状況を監視し、適正なリンス処理が行われた後、リンス処理を終了することができる。
【００６５】
なお、上記外チャンバ２４の拡開側部位の上部には、第２の排気ポート４８が設けられており、この第２の排気ポート４８には、図示しない開閉弁を介設した第２の排気管４９が接続されている。
【００６６】
また、乾燥流体供給手段８０は、図１１〜図１３に示すように、第２の固定壁３８に取り付けられる乾燥流体供給ノズル８１と、乾燥流体例えば窒素（Ｎ₂）供給源８２と、乾燥流体供給ノズル８１とＮ₂供給源８２とを接続する乾燥流体供給管路８３に介設される開閉弁８４、フィルタ８５、Ｎ₂温度コントローラ８６とを具備してなり、かつ乾燥流体供給管路８３におけるＮ₂温度コントローラ８６の二次側に切換弁８７を介して上記ＩＰＡ供給管路６２から分岐される分岐管路８８を接続してなる。この場合、乾燥流体供給ノズル８１は、上記純水供給ノズル７１と同様に内チャンバ２３の外側に位置すると共に、外チャンバ２４の内側に位置し得るように配設されており、内筒体２５が待機位置に後退し、外筒体２６がロータ２１とウエハＷを包囲する位置に移動して外チャンバ２４を形成した際に、外チャンバ２４内に位置して、ウエハＷに対してＮ₂ガスとＩＰＡの混合流体を霧状に供給し得るように構成されている。この場合、Ｎ₂ガスとＩＰＡの混合流体で乾燥した後に、更にＮ₂ガスのみで乾燥する。なお、ここでは、乾燥流体がＮ₂ガスとＩＰＡの混合流体である場合について説明したが、この混合流体に代えてＮ₂ガスのみを供給するようにしてもよい。
【００６７】
なお、上記薬液供給手段５０、ＩＰＡ供給手段６０、純水供給手段７０及び乾燥流体供給手段８０におけるポンプ５４，５４Ａ、温度コントローラ５６，Ｎ₂温度コントローラ８６、開閉弁５７、ＩＰＡ供給弁６３及び切換弁８７は、ＣＰＵ３０によって、上記第一実施形態と同様に制御されている（図１１参照）。
【００６８】
なお、上記のように構成される処理装置２０は、上方にフィルタユニット（図示せず）を有する処理空間内に配設されて、常時清浄空気がダウンフローされている。
【００６９】
次に、上記洗浄・乾燥処理装置の動作態様について説明する。まず、搬入・搬出部２００のキャリア搬入部２０１に搬入された未処理のウエハＷを収納したキャリア１００を、キャリア搬送手段８００によってキャリア載置台７００上に搬送する。次に、ウエハ搬送チャック１０がキャリア載置台７００上に移動して、キャリア１００内からウエハＷを搬出し、受け取ったウエハＷを処理部３００の処理装置２０の上方、すなわち、内筒体２５及び外筒体２６が待機位置に後退した状態のロータ２１の上方位置まで搬送する。すると、ウエハ受渡ハンド２９が上昇して、ウエハ搬送チャック１０にて搬送されたウエハＷを受け取り、その後、下降してウエハＷをロータ２１の固定保持棒３１上に受け渡した後、ウエハ受渡ハンド２９は元の位置に移動する。ロータ２１の固定保持棒３１上にウエハＷを受け渡した後、図示しないロック手段が作動してウエハ押え棒３２がウエハＷの上側縁部まで移動してウエハＷの上部を保持する。
【００７０】
上記のようにしてロータ２１にウエハＷがセットされると、内筒体２５及び外筒体２６がロータ２１及びウエハＷを包囲する位置まで移動して、内チャンバ２３内にウエハＷを収容する。この状態において、まず、ウエハＷに薬液を供給して薬液処理を行う。この薬液処理は、ロータ２１及びウエハＷを低速回転例えば３５ｒｐｍで回転させた状態で所定時間（例えば３秒）薬液を供給してウエハＷの表面に供給薬液を接触し、次に、ロータ２１及びウエハＷを中速回転例えば１５０ｒｐｍで回転させた状態で所定時間（例えば３秒）薬液を供給してウエハＷの表面に薬液を流動接触した後、薬液の供給を停止し、その後、ロータ２１及びウエハＷを数秒間高速回転例えば８００ｒｐｍで回転させてウエハＷ表面に接触する反応層の薬液を振り切って除去する。この場合、薬液除去の時間は、薬液供給接触・流動接触時間よりも短かくすることで、素早く除去を行い、薬液供給接触・流動接触時間は、除去時間よりも長くすることで、ウエハ表面に均一でかつ十分に接触させて反応を促すことができる。また、薬液又は低速回転数、中速回転数と高速回転数の設定値によっては、逆に、薬液除去時間を薬液供給接触・流動接触時間より長くすることで、処理効果を上げることができる。この薬液供給接触工程と薬液流動接触工程及び薬液除去工程を数回ないし数千回繰り返して薬液処理（薬液供給接触・薬液流動接触・薬液除去処理）を完了する。
【００７１】
上記薬液処理工程において、最初に供給される薬液は、循環供給タンク５２ｂ内に貯留された薬液が使用され、この最初に使用された薬液は第１の排液管４２から廃棄され、以後の処理に供される薬液は供給タンク５２ｂ内に貯留された薬液を循環供給する。そして、薬液処理の最後に、薬液供給源５８から供給タンク５２ａ内に供給された新規の薬液が使用されて、薬液処理が終了する。
【００７２】
なお、薬液処理工程の際には、薬液処理に供された薬液は第１の排液ポート４１内に排出され、切換弁（図示せず）の動作によって薬液供給部５２の循環管路９０又は第１の排液管４２に排出される一方、薬液から発生するガスは第１の排気ポート４３を介して第１の排気管４４から排気される。
【００７３】
薬液処理を行った後、内チャンバ２３内にウエハＷを収容したままの状態で、ＩＰＡ供給手段６０のＩＰＡの供給ノズルを兼用する薬液供給ノズル５１から低速回転例えば３５ｒｐｍで回転させた状態で所定時間（例えば３秒）間ＩＰＡを供給してウエハＷの表面にＩＰＡを供給接触し、次に、ロータ２１及びウエハＷを中速回転例えば１５０ｒｐｍで回転させた状態で所定時間（例えば３秒）ＩＰＡを供給してウエハＷの表面にＩＰＡを流動接触した後、ＩＰＡの供給を停止し、その後、ロータ２１及びウエハＷを数秒間高速回転例えば８００ｒｐｍで回転させてウエハＷ表面に付着するＩＰＡを振り切って除去する。このＩＰＡ供給接触工程とＩＰＡ流動接触工程及びＩＰＡ除去工程を数回ないし数千回繰り返して薬液除去処理（ＩＰＡ供給接触・ＩＰＡ流動接触・ＩＰＡ除去処理）を完了する。なお、この場合、上述したように、ＩＰＡ供給接触工程とＩＰＡ流動接触工程とを同時に行った後、ＩＰＡ除去工程を行うようにしてもよい。
【００７４】
この薬液除去処理においても、上記薬液処理工程と同様に、最初に供給されるＩＰＡは、循環供給タンク６１ｂ内に貯留されたＩＰＡが使用され、この最初に使用されたＩＰＡは第１の排液管４２から廃棄され、以後の処理に供されるＩＰＡは供給タンク６１ｂ内に貯留されたＩＰＡを循環供給する。そして、薬液除去処理の最後に、ＩＰＡ供給源６４から供給タンク６１ａ内に供給された新規のＩＰＡが使用されて、薬液除去処理が終了する。
【００７５】
なお、薬液除去処理において、薬液除去処理に供されたＩＰＡは第１の排液ポート４１に排出され、切換弁（図示せず）の動作によって溶剤供給部６１の循環管路９０又は第１の排液管４２に排出される一方、ＩＰＡガスは第１の排気ポート４３を介して第１の排気管４４から排気される。
【００７６】
薬液処理及び薬液除去処理が終了した後、内筒体２５が待機位置に後退して、ロータ２１及びウエハＷが外筒体２６によって包囲、すなわち外チャンバ２４内にウエハＷが収容される。この状態において、まず、リンス液供給手段の純水供給ノズル７１から回転するウエハＷに対してリンス液例えば純水が供給されてリンス処理される。このリンス処理に供された純水と除去されたＩＰＡは第２の排液ポート４５を介して第２の排液管４６から排出される。また、外チャンバ２４内に発生するガスは第２の排気ポート４８を介して第２の排気管４９から外部に排出される。
【００７７】
なお、上記純水リンス工程においても、薬液処理工程と同様に、純水供給接触工程、純水流動接触工程、除去工程を順次繰り返してもよい。
【００７８】
このようにしてリンス処理を所定時間行った後、外チャンバ２４内にウエハＷを収容したままの状態で、乾燥流体供給手段８０のＮ₂ガス供給源８２及びＩＰＡ供給源６４からＮ₂ガスとＩＰＡの混合流体を回転するウエハＷに供給して、ウエハ表面に付着する純水を除去することで、ウエハＷと外チャンバ２４内の乾燥を行うことができる。また、Ｎ₂ガスとＩＰＡの混合流体によって乾燥処理した後、Ｎ₂ガスのみをウエハＷに供給することで、ウエハＷの乾燥と外チャンバ２４内の乾燥をより一層効率よく行うことができる。
【００７９】
上記のようにして、ウエハＷの薬液処理、薬液除去処理、リンス処理及び乾燥処理が終了した後、外筒体２６が内筒体２５の外周側の待機位置に後退する一方、図示しないロック解除手段が動作してウエハ押え棒３２をウエハＷの押え位置から後退する。すると、ウエハ受渡ハンド２９が上昇してロータ２１の固定保持棒３１にて保持されたウエハＷを受け取って処理装置２０の上方へ移動する。処理装置の上方へ移動されたウエハＷはウエハ搬送チャック１０に受け取られてインターフェース部４００に搬送され、キャリア載置台７００上のキャリア１００内に搬入される。処理済みのウエハＷを収納したキャリア１００はキャリア搬送手段８によってキャリア搬出部２０２に搬送された後、装置外部に搬送される。
【００８０】
なお、上記実施形態では、この発明に係る液処理方法及び液処理装置を半導体ウエハの洗浄・乾燥処理装置に適用した場合について説明したが、半導体ウエハ以外のＬＣＤ用ガラス基板等にも適用できることは勿論である。
【００８１】
【発明の効果】
以上に説明したように、この発明によれば、上記のように構成されているので、以下のような効果が得られる。
【００８２】
１）請求項１，２，３，４記載の発明によれば、被処理基板の表面に処理液を供給し、処理液を供給しながら被処理基板の表面に接触する処理液の流速を上げ、その後処理液の供給を停止し、被処理基板の表面に接触する処理液を除去する工程とを順次繰り返し行うことにより、被処理基板の表面に形成されたホール（穴）や溝内に付着する付着物例えばポリマに処理液を確実に接触させた状態で、被処理基板の表面上に処理液を拡散させ、その後、付着物（ポリマ）を処理液と共に除去することができる。したがって、処理効率の向上が図れると共に、少ない処理液によって所望の液処理を行うことができる。
【００８３】
２）また、処理液を除去させる際に、処理液の供給を停止させることにより、処理液の使用量を少なくすることができる。したがって、処理液の有効利用を図ることができる。
【００８４】
３）請求項１，５記載の発明によれば、上記工程を順次繰り返し行った後に、被処理基板をリンス処理すると共に、乾燥処理することにより、被処理基板の表面に付着する付着物（ポリマ）及び処理液を確実に除去することができる。したがって、上記１）に加えて更に被処理基板の処理の信頼性の向上を図ることができる。
【図面の簡単な説明】
【図１】 この発明に係る液処理装置の第一実施形態を示す概略構成図である。
【図２】 この発明の液処理方法における薬液供給接触工程、薬液流動接触工程及び薬液除去工程を示す概略側面図である。
【図３】 上記薬液供給接触工程、薬液流動接触工程及び薬液除去工程の手順を示すフローチャートである。
【図４】 上記薬液供給接触工程、薬液流動接触工程及び薬液除去工程における被処理基板の回転数と薬液の吐出状態との関係を示すグラフである。
【図５】 被処理基板の表面に付着するポリマと薬液の接触状態を示す拡大断面図（ａ）及び（ａ）のＡ−Ａ線に沿う断面図（ｂ）である。
【図６】 この発明の液処理方法におけるＩＰＡ供給接触工程、ＩＰＡ流動接触工程及びＩＰＡ除去工程を示す概略側面図である。
【図７】 上記ＩＰＡ供給接触工程、ＩＰＡ流動接触工程及びＩＰＡ除去工程の手順を示すフローチャートである。
【図８】 この発明の液処理方法におけるＩＰＡ供給工程及びＩＰＡ除去工程を示す概略側面図である。
【図９】 上記ＩＰＡ供給工程及びＩＰＡ除去工程の手順を示すフローチャートである。
【図１０】 この発明に係る第二実施形態の液処理装置を適用した洗浄・乾燥処理装置を示す概略平面図である。
【図１１】 上記液処理装置の概略構成図である。
【図１２】 上記液処理装置の要部断面図である。
【図１３】 上記液処理装置における配管系統を示す概略配管図である。
【図１４】 従来の洗浄処理方法における処理液の流速分布を示す概略断面図である。
【図１５】 従来の液処理方法における被処理基板の表面に付着するポリマと薬液の接触状態を示す拡大断面図（ａ）及び（ａ）のＢ−Ｂ線に沿う断面図（ｂ）である。
【符号の説明】
Ｗ 半導体ウエハ（被処理基板）
１ スピンチャック（保持手段）
２ モータ（回転駆動手段）
３ 処理液供給手段
３Ａ 薬液供給手段
３Ｂ ＩＰＡ供給手段
３ａ 薬液供給ノズル
３ｂ 薬液供給源
５ ＣＰＵ（制御手段）
２１ ロータ（保持手段）
２２ モータ（回転駆動手段）
３０ ＣＰＵ（制御手段）
５０ 薬液供給手段
５１ 薬液供給ノズル（ＩＰＡ供給ノズル）
６０ ＩＰＡ供給手段（溶剤供給手段）[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a liquid processing method and a liquid processing apparatus, and more specifically, processing such as cleaning by supplying a processing liquid such as a chemical liquid or a rinsing liquid to a target substrate such as a semiconductor wafer or a glass substrate for LCD. The present invention relates to a liquid processing method and a liquid processing apparatus.
[0002]
[Prior art]
In general, in the manufacturing process of a semiconductor device, for example, an oxide film (SiO ₂ ), A nitride film (SiN), a metal film (Cu), etc., and then a resist is applied to the wafer and the like, then a predetermined circuit pattern is exposed, developed with a developer, and the underlying oxidation In order to dry-etch a film, a nitride film, a metal film, etc., and then remove a resist and etching residue (polymer, etc.), a cleaning method using a processing solution is widely adopted. Here, the treatment liquid refers to, for example, an organic solvent, a chemical liquid such as an organic acid or an inorganic acid, and a rinse liquid.
[0003]
Conventional cleaning processing methods of this type include (1) a spray type that supplies a processing liquid to a liquid while rotating at a constant speed while a wafer is placed in a cassette in the chamber during processing, and (2) A dipping method is employed in which a wafer or the like is dipped in a processing solution and cleaned.
[0004]
[Problems to be solved by the invention]
However, in general, this type of conventional cleaning method has a problem related to the flow of liquid as shown in FIG. That is, as shown in FIG. 14, the processing liquid L is supplied onto the surface Wa of the wafer W and flows along the surface of the wafer W. In this state, the speed of the processing liquid L is distributed as shown in FIG. 14 due to the viscosity of the processing liquid L and the friction between the processing liquid L and the wafer W. For this reason, although there is a flow of the entire processing liquid supplied to the wafer W or the like, the extremely thin layer La (reaction layer) of the processing liquid L in contact with the surface Wa of the wafer W is maintained even after being subjected to processing. And so on. Therefore, there is a problem that the used processing liquid L is not easily replaced with a new processing liquid, the chemical reaction on the surface of the wafer W or the like is lowered, and a long time is required for the processing.
[0005]
Further, in the cleaning method for cleaning the surface Wa of the wafer W by spin rotation and spraying, the surface Wa of the wafer W has a line-shaped groove G or a hole deeper than the groove G (hole) as shown in FIG. ) Since there are a variety of shapes such as H, and a polymer P such as a resist or etching residue adheres to these grooves G and holes H, the wafer W is simply rotated and processed while spraying the processing liquid L. In particular, the method has a problem that the polymer P adhering in the hole (hole) H cannot be reliably removed. As a method for solving this problem, a method of spraying the processing liquid L by slowing the rotation speed of the wafer W is conceivable. However, this method consumes a large amount of the processing liquid L and requires a long time for processing. There's a problem.
[0006]
The present invention has been made in view of the above circumstances, and an object thereof is to provide a liquid processing method and a liquid processing apparatus capable of improving processing efficiency and reducing the amount of processing liquid used.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the claims 1 The liquid processing method described is for processing a substrate to be processed. Predetermined time The processing liquid is supplied to the surface of the substrate to be processed while rotating at a low speed, and the substrate to be processed is Predetermined time A process of supplying the processing liquid to the surface of the substrate to be processed while rotating at a medium speed, and then stopping the supply of the processing liquid and removing the processing liquid in contact with the surface of the substrate to be processed while rotating the substrate to be processed at a high speed. When, After sequentially repeating the above steps, there are a step of rinsing the substrate to be processed and a step of drying the substrate to be processed. It is characterized by that.
[0008]
Claims above 1 In the liquid processing method described above, for example, the low-speed rotation may be 1 to 150 rpm, the medium-speed rotation may be 100 to 500 rpm, and the high-speed rotation may be 500 to 3000 rpm. 2 ). Here, although the rotation speeds of the low speed rotation and the medium speed rotation partially overlap, the rotation speed differs depending on the viscosity of the processing liquid to be used. For example, in the case of a processing liquid having a high viscosity, the low-speed rotation is 100 to 150 rpm, and in the case of a processing liquid having a low viscosity, the fluidity is good, so that the medium-speed rotation is 100 to 150 rpm. Same as low-speed rotation of high processing liquid. However, the same type of processing solution does not overlap.
[0009]
Claims 3 The liquid processing apparatus described includes a holding unit that holds a substrate to be processed, a rotation driving unit that rotationally drives the holding unit, and a processing liquid supply that supplies the processing liquid to the surface of the substrate to be processed held by the holding unit. Control means for controlling the rotation of the holding means and the supply of the processing liquid supply means, Rinsing liquid supply means whose supply is controlled by the control means; And a substrate to be processed based on a control signal from the control means. Predetermined time The processing liquid is supplied to the surface of the substrate to be processed while rotating at a low speed. Predetermined time A process of supplying the processing liquid to the surface of the substrate to be processed while rotating at a medium speed, and then stopping the supply of the processing liquid, and removing the processing liquid in contact with the surface of the substrate to be processed while rotating the substrate to be processed at a high speed Repeatedly in sequence And after repeating the above steps in sequence, formed to perform a step of rinsing the substrate to be processed. It is characterized by that. In this case, similarly to the above, the low speed rotation may be 1 to 150 rpm, the medium speed rotation may be 100 to 500 rpm, and the high speed rotation may be 500 to 3000 rpm. 4 ). Claims 3 Or 4 In the liquid processing apparatus described above, the supply is performed by the control means. Controlled dry gas supply means And based on a control signal from the control means, After performing the rinsing step, the substrate to be processed is It is preferable to form so as to perform a drying step (claims) 5 ).
[0010]
According to this invention, the processing liquid is supplied to the surface of the substrate to be processed, the flow rate of the processing liquid that contacts the surface of the substrate to be processed is increased while supplying the processing liquid, and then the supply of the processing liquid is stopped, By sequentially repeating the process of removing the processing liquid that comes into contact with the surface of the substrate, the processing liquid is surely brought into contact with a hole (hole) formed on the surface of the substrate to be processed or an adhering substance such as a polymer adhering to the groove. In this state, the flow rate of the processing liquid on the surface of the substrate to be processed can be increased, and then the deposit (polymer) can be removed together with the processing liquid. Accordingly, the processing efficiency can be improved and the desired liquid processing can be performed with a small amount of processing liquid. 1, 2, 3, 4 ).
[0011]
Further, when removing the processing liquid, the amount of the processing liquid used can be reduced by stopping the supply of the processing liquid. 1, 2, 3, 4 ).
[0012]
In addition, after repeatedly performing the above steps in sequence, the substrate to be processed is rinsed and dried to reliably remove deposits (polymer) and processing liquid adhering to the surface of the substrate to be processed. (Claims) 1,5 ).
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below in detail with reference to the drawings. In this embodiment, a case where the present invention is applied to a semiconductor wafer cleaning / drying processing apparatus will be described.
[0014]
FIG. 1 is a schematic configuration diagram showing a first embodiment of a liquid processing apparatus according to the present invention. The liquid processing apparatus according to the first embodiment includes a spin chuck 1 that is a holding unit that rotatably holds a semiconductor wafer W (hereinafter referred to as a wafer W) that is a substrate to be processed, and a rotational drive that rotationally drives the spin chuck 1. A motor 2 as a means, a chemical solution supply means 3A (chemical solution supply means) such as a processing solution such as a resist stripping solution and a polymer removal solution on the surface of the wafer W held by the spin chuck 1, and a solvent of the chemical solution such as isopropyl alcohol ( Treatment liquid supply means 3 comprising IPA supply means 3B (IPA supply means), for example, nitrogen (N ₂ ) And other dry gases (such as N in the drawing) ₂ Supply means 4 (hereinafter N) ₂ The main part is composed of the supply means 4) and the control means 5 for controlling at least the timing for supplying the treatment liquid and the timing for removing the treatment liquid. The term “chemical solvent” as used herein refers to a liquid that does not react with the chemical liquid and does not react with the rinse liquid used in the subsequent process. The chemical liquid solvent is used to roughly remove the chemical liquid adhering to the wafer W or the chamber. Anything that can be washed away.
[0015]
In this case, a cup 6 is disposed around and below the spin chuck 1 and the wafer W held by the spin chuck 1, and the cup 6 prevents the chemical solution and the IPA from being scattered outside. ing. A drain port 7 and an exhaust port 8 are provided at the bottom of the cup 6.
[0016]
The processing liquid supply means 3 is configured to be horizontally movable above the wafer W by the moving mechanism 9a and close to the vicinity of the surface of the wafer W, so that it can be moved vertically. A chemical liquid supply nozzle 3a for supplying (discharging) the chemical liquid is provided, and a chemical liquid supply pump 3d is sequentially connected from the chemical liquid supply source 3b side to a chemical liquid supply line 3c that connects the chemical liquid supply nozzle 3a and the chemical liquid supply source 3b. , A filter 3e, a temperature controller 3f for adjusting the temperature of the chemical solution to a predetermined temperature, and an on-off valve 3g. In this case, an IPA supply source (not shown) is connected between the on-off valve 3g of the chemical solution supply line 3c and the chemical solution supply nozzle 3a via a switching valve (not shown).
[0017]
N ₂ The supply unit 4 is configured to be horizontally movable and vertically movable above the wafer W by the moving mechanism 9b. ₂ N to supply (inject) gas ₂ Gas supply nozzle 4a is provided, and this N ₂ Gas supply nozzle 4a and N ₂ N connecting to gas supply source 4b ₂ N in the gas supply line 4c ₂ In order from the gas supply source 4b side, a flow rate controller 4d, a filter 4e, an on-off valve 4f, and N ₂ A temperature controller 4g is provided as temperature adjusting means for adjusting the temperature of the gas to a predetermined temperature. In this case, N ₂ Temperature controller 4g of gas supply line 4c and N ₂ A supply source of a rinsing liquid (not shown) such as pure water is connected to the gas supply nozzle 4a via a switching valve (not shown).
[0018]
On the other hand, the control means 5 is formed by, for example, a central processing unit (CPU), and a control signal from the control means 5 (hereinafter referred to as CPU 5) is a mechanism for moving the motor 2 and the chemical solution supply nozzle 3a. 9a and N ₂ A drive system such as a moving mechanism 9b of the gas supply nozzle 4a, a supply pump 3d, a temperature controller 3f and an on-off valve 3g of the chemical solution supply means 3, N ₂ It is configured to be transmitted to the flow rate controller 4d, the on-off valve 4f and the temperature controller 4g of the gas supply means 4.
[0019]
Therefore, the motor 2 can be switched between a low speed rotation of a predetermined rotation number, for example, 1 to 150 rpm, a medium speed rotation of 100 to 500 rpm, and a high speed rotation of 500 to 3000 rpm, by a control signal from the CPU 5. In this case, the low-speed rotation refers to rotation that allows the chemical liquid L to enter the hole H (hole) formed in the surface Wa of the wafer W, and the medium-speed rotation is formed on the surface Wa of the wafer W. The rotation is such that the chemical solution L can flow along the groove G or over the groove G so that the chemical liquid L flows and diffuses on the surface Wa of the wafer W and can sufficiently react on the wafer W. The rotation is a rotation that shakes off the contacted chemical liquid L with a centrifugal force (see FIG. 5).
[0020]
Depending on the shape and depth of the hole H (hole), it may be more effective to place the wafer W in a stopped state. Therefore, in this case, it is better to stop instead of the low speed rotation.
[0021]
Further, the chemical supply nozzle 3a or N is controlled by a control signal from the CPU 5. ₂ The gas supply nozzle 4 a can move horizontally and vertically above the wafer W, that is, relative to the wafer W. Further, a predetermined amount of chemical liquid or N is controlled by a control signal from the CPU 5. ₂ The gas is supplied to the wafer W. Although not shown, the control signal from the CPU 5 is similarly transmitted to the IPA supply means and the pure water supply means so that a predetermined amount of IPA and pure water is supplied.
[0022]
Next, a liquid processing method using the liquid processing apparatus will be described with reference to FIGS.
[0023]
First, the wafer W is transferred onto the spin chuck 1 by a transfer means (not shown), and the wafer W is held by the spin chuck 1. Then, the chemical supply nozzle 3a is moved above the center of the wafer W by driving the moving mechanism 9a, and in this state, the spin chuck 1 and the wafer W are rotated at a low speed, for example, 35 rpm, by driving the motor 2. A predetermined amount of chemical liquid L (for example, polymer removal liquid) is discharged (supplied) from the chemical liquid supply nozzle 3a, and this state is performed for a predetermined time (for example, 3 seconds) to bring the chemical liquid L into contact with the wafer surface Wa {Step 3-1 ( First chemical liquid supply contact step; see FIG. 2 (a))}. As a result, the polymer removal liquid, which is the chemical liquid L, penetrates into the hole H formed on the surface Wa of the wafer W, contacts the polymer P adhering to the hole H, and chemically reacts to melt a part of the polymer. (See FIG. 5). In addition, when performing the chemical processing at a high temperature, the chemical processing can be suitably performed by adjusting the temperature of the chemical L to be slightly higher than the optimum processing temperature by the temperature controller 3f.
[0024]
Next, in a state where a predetermined amount of the chemical liquid L is discharged from the chemical liquid supply nozzle 3a, the spin chuck 1 and the wafer W are rotated at a medium speed, for example, 100 rpm, and this state is performed for a predetermined time (for example, 3 seconds). The flow rate of the chemical liquid L in contact with the wafer surface Wa is increased, and the chemical liquid L is brought into contact with the entire wafer surface Wa {step 3-2 (first chemical liquid flow contact step; see FIG. 2B)}. Accordingly, as indicated by an arrow Y in FIG. 5, the chemical liquid L flows on the surface Wa of the wafer W along the groove G formed on the surface Wa of the wafer W or over the groove G and on the surface Wa of the wafer W. It contacts the polymer P adhering to it and chemically reacts to melt and remove a part of the polymer.
[0025]
Next, the discharge of the chemical liquid L is stopped, and the spin chuck 1 and the wafer W are rotated at a high speed, for example, a rotation speed of 800 rpm, and the processed chemical liquid L that remains (contacts) on the wafer surface is shaken off by the centrifugal force. It is scattered and removed outward {Step 3-3 (first chemical solution removing step; see FIG. 2 (c))}.
[0026]
After the chemical liquid L on the wafer surface is removed by shaking for several seconds (for example, 4 seconds), the spin chuck 1 and the wafer W are rotated again at a low speed, for example, 35 rpm, and a predetermined amount of the chemical liquid L is supplied from the chemical liquid supply nozzle 3a. This state is performed for a predetermined time (for example, 3 seconds), and the chemical liquid L enters (contacts) into the hole H formed on the wafer surface Wa {step 3-4 (second chemical liquid supply contact step; FIG. 2 (d))}. As a result, the chemical liquid L penetrates into the hole H formed on the surface Wa of the wafer W, contacts the polymer P adhering to the hole H, and chemically reacts to melt and remove a part of the polymer.
[0027]
After the second chemical supply (contact), the spin chuck 1 and the wafer W are rotated at a medium speed, for example, 100 rpm, in a state where a predetermined amount of the chemical L is discharged from the chemical supply nozzle 3a, as described above. Rotate and perform this state for a predetermined time (for example, 3 seconds) to diffuse the chemical liquid L on the wafer surface Wa and bring the chemical liquid L into contact with the entire wafer surface Wa {step 3-5 (second chemical liquid flow contact step; FIG. 2 (e))}. Accordingly, as indicated by an arrow Y in FIG. 5, the chemical liquid L flows on the surface Wa of the wafer W along the groove G formed on the surface Wa of the wafer W or over the groove G and on the surface Wa of the wafer W. It contacts the polymer P adhering to it and chemically reacts to melt and remove a part of the polymer.
[0028]
After the second contact of the chemical solution, the discharge of the chemical solution L is stopped and the spin chuck 1 and the wafer W are rotated at a high speed, for example, 800 rpm, and this state is performed for several seconds. Then, the processed chemical solution L staying on the wafer surface is shaken off by the centrifugal force and scattered outward to be removed {step 3-6 (second chemical solution removing step; see FIG. 2 (f))}.
[0029]
Thereafter, the chemical solution supply contact process, the chemical fluid flow contact process, and the chemical solution removal process similar to the above are repeated n times (several to several thousand times) sequentially to perform the chemical liquid supply contact process, the chemical fluid contact process, the chemical liquid L, and the polymer P. The removal process is terminated {Step 3- (3n-2), Step 3- (3n-1), Step 3-3n}.
[0030]
Thus, the step of supplying and contacting the chemical liquid L into the hole H formed on the surface Wa of the wafer W, the step of fluidly contacting the chemical liquid L that contacts the surface Wa of the wafer W, and the surface Wa of the wafer W are contacted. By repeatedly repeating the process of removing the chemical solution L, the processed (reacted) chemical solution L that has been chemically reacted with the surface of the wafer W and has become less reactive is frequently used as an unreacted new chemical solution L. Can be replaced.
[0031]
Here, “treated” or “reacted” means a state in which the reaction has progressed sufficiently and the reactivity has become low (reaction rate has slowed), and “new” or “unreacted” means that the reaction has not yet been carried out. Is a state in which the reaction has been carried out but the reaction has been carried out, but has been recovered to the desired reactivity by a filter or the like.
[0032]
Next, a switching valve (not shown) provided in the chemical solution supply line 3c is switched to rotate the spin chuck 1 and the wafer W at a low speed, for example, 35 rpm, and a predetermined amount of the chemical solution L from the chemical solution supply nozzle 3a. The solvent (for example, IPA liquid) is discharged, and this state is performed for a predetermined time (for example, 3 seconds) to supply and contact IPA on the wafer surface {Step 7-1 (first IPA supply contact step; FIG. 6A) reference)}. As a result, a part of the chemical liquid L (polymer removing liquid) adhering to the hole H formed on the wafer surface Wa is melted and washed away by the IPA.
[0033]
Next, in a state where a predetermined amount of IPA is discharged from the chemical solution supply nozzle 3a, the spin chuck 1 and the wafer W are rotated at a medium speed, for example, 100 rpm, and this state is performed for a predetermined time (for example, 3 seconds). While increasing the flow rate of the IPA contacting the surface Wa, the IPA is brought into contact with the entire wafer surface Wa {Step 7-2 (first IPA fluid contact step; see FIG. 6B)}. As a result, the IPA melts and removes the chemical solution L adhering to the wafer surface Wa along the groove G formed on the surface Wa of the wafer W or over the groove G and flowing on the surface Wa of the wafer W. To do.
[0034]
Next, the discharge of the IPA is stopped, and the spin chuck 1 and the wafer W are rotated at a high speed, for example, 800 rpm, and this state is performed for several seconds. {Step 7-2 (first IPA removal step; see FIG. 6 (c))}.
[0035]
The IPA supply contact process, the IPA fluid contact process, and the IPA removal process are repeated as shown in FIGS. 6D, 6E, and 6F. {Step 7-4, Step 7-5, Step 7-6 } Thereafter, the IPA contact / IPA diffusion / removal process is completed by repeating the same a predetermined number of times (several to thousands of times) {Step 7- (3n-1), Step 7- (3n-1), Step 7 −3n}.
[0036]
As described above, the chemical liquid supply contact / chemical liquid flow contact / removal process, that is, the first to nth chemical liquid supply contact, the first to nth chemical liquid flow contact, and the first to nth chemical liquid supply are sequentially repeated. Contact step / chemical fluid contact step / removal step, first-predetermined IPA supply contact, first-predetermined IPA flow contact, and first-predetermined IPA removal contact sequence, IPA supply contact / IPA fluid contact step / removal A process is performed to remove the polymer P adhering to the wafer surface.
[0037]
In the above description, the case where the removal of the chemical liquid L is performed in three steps of the IPA supply contact process, the IPA fluid contact process, and the removal process is described. However, since the IPA liquid is lower in viscosity than the chemical liquid L, the IPA supply The IPA removal step may be performed after the contact step and the IPA fluid contact step are performed simultaneously. That is, as shown in FIGS. 8 and 9, the spin chuck 1 and the wafer W are rotated at a low speed, for example, 1 to 500 rpm, and a predetermined amount of IPA liquid is discharged from the chemical liquid supply nozzle 3a. The IPA is brought into contact with the wafer surface for several tens of seconds {Step 9-1 (first IPA supply step; see FIG. 8A)}. As a result, a part of the chemical solution L (polymer removal solution) on which the IPA adheres to the wafer surface is melted and washed away.
[0038]
Next, the discharge of the IPA is stopped, and the spin chuck 1 and the wafer W are rotated at a high speed, for example, at a rotational speed of 101 to 3000 rpm, and this state is performed for several seconds, and the IPA retained on the wafer surface is shaken off by the centrifugal force. It is scattered and removed {Step 9-2 (first IPA removal step; see FIG. 8B)}.
[0039]
The above IPA supply process and IPA removal process are repeated as shown in FIGS. 8C and 8D {step 9-3, step 9-4}, and the same is repeated a predetermined number of times (several to thousands of times). To finish the IPA supply / removal process {step 9- (2n-1), step 9-2n}.
[0040]
As described above, after the polymer P adhering to the wafer surface Wa is removed, the moving mechanism 9a of the chemical solution supply nozzle 3a is driven to retract the chemical solution supply nozzle 3a to the standby position, while also supplying pure water. N ₂ The gas supply nozzle 4a is moved to the upper center portion of the wafer W. Then, pure water supplied from a pure water supply source (not shown) as a rinsing liquid is supplied to the wafer W while rotating the wafer W to remove IPA remaining on the wafer surface.
[0041]
After rinsing as described above, N ₂ By switching a switching valve (not shown) provided in the gas supply line 4c, N ₂ N from the gas supply nozzle 4a to the wafer surface ₂ Gas is supplied (jetted) to remove water droplets of pure water adhering to the wafer surface. In this case, the temperature controller 4g ₂ By adjusting the temperature of the gas to be higher than room temperature, the drying process can be performed efficiently. Further, rotation of the wafer W and N ₂ By combining the gas supply nozzle 4a with reciprocating movement in the horizontal direction, the drying process can be performed more quickly. After the drying process, the wafer W is unloaded from the spin chuck 1 and the process ends.
[0042]
In the above processing method, when the rotation speed of the wafer W was changed to 35 rpm, 100 rpm, 200 rpm, and 800 rpm and the removal performance of the polymer P on the wafer surface and the hole H (hole) was examined, the results shown in Table 1 were obtained. It was.
[0043]
[Table 1]

[0044]
As a result of the above experiment, when the rotation speed of the wafer W was 35 rpm, the polymer P in the hole H could be completely removed, but the polymer P remained on the surface of the wafer W. Further, when the rotation speed of the wafer W was 100 rpm, the polymer P on the surface of the wafer W could be completely removed, and the polymer P in the hole H could be almost removed. Further, when the rotation speed of the wafer W was 200 rpm, the polymer P on the surface of the wafer W could be almost removed, but the polymer P in the hole H remained. Further, when the rotation speed of the wafer W was 800 rpm, the polymer P remained on both the surface of the wafer W and the hole H. Therefore, in order to remove the polymer P adhering in the hole H, it is better to set the rotation speed of the wafer W to a low speed rotation of 35 rpm, and in order to remove the polymer P adhering to the surface of the wafer W, the wafer W is removed. It was found that it is better to set the rotation speed of the medium speed to 100 to 200 rpm.
[0045]
Further, when the relationship between the polymer removal performance and the wafer rotation speed was investigated using the chemicals L having different viscosities, the rotation speed of the wafer W was 1 to 150 rpm { Depending on the shape and depth of the hole H, it may be more effective to set the wafer W in a stopped state}, and the polymer adhering to the surface of the wafer W (including the groove G) may be better. In order to remove P, it was found that the rotation speed of the wafer W should be a medium speed rotation of 100 to 500 rpm. In order to shake off the polymer P and the chemical liquid L adhering to the surface of the wafer W by centrifugal force, the rotational speed of the wafer W may be 500 to 3000 rpm.
[0046]
Although the case of the single wafer processing of the wafer W has been described in the above embodiment, a plurality of wafers W can be processed at the same time as described above. Hereinafter, an embodiment in which a plurality of wafers W are simultaneously cleaned and dried will be described with reference to FIGS.
[0047]
FIG. 10 is a schematic plan view of the liquid processing apparatus, FIG. 11 is a schematic configuration diagram showing a second embodiment of the liquid processing apparatus according to the present invention, FIG. 12 is a cross-sectional view of the main part of the liquid processing apparatus, and FIG. These are schematic piping diagrams which show the piping system of the said liquid processing apparatus.
[0048]
As shown in FIG. 10, the cleaning / drying processing system includes a loading / unloading unit 200 for loading / unloading a container, for example, a carrier 100, for storing a plurality of wafers W, for example, 25 sheets in a vertical state, and a wafer W. A processing unit 300 that performs liquid processing and drying processing, and an interface unit 400 that is positioned between the loading / unloading unit 200 and the processing unit 300 and that performs delivery of the wafer W, position adjustment, posture change, and the like are mainly configured. ing. A carrier stock 500 that temporarily stores an empty carrier 100 and a carrier cleaner 600 that cleans the carrier 100 are disposed beside the loading / unloading unit 200 and the interface unit 400.
[0049]
The carry-in / carry-out unit 200 is disposed at one end of the cleaning / drying apparatus, and a carrier carry-in unit 201 and a carrier carry-out unit 202 are provided side by side.
[0050]
The interface unit 400 is provided with a carrier mounting table 700, and the carrier 100 received from the carrier loading unit 201 is placed on the carrier mounting table 700 between the carrier mounting table 700 and the loading / unloading unit 200. Alternatively, carrier transport means 800 is disposed that transports the carrier 100 to the carrier stock 500 and transports the carrier 100 on the carrier mounting table 700 to the carrier carry-out unit 202 or the carrier stock 500. Further, the interface unit 400 is provided with a transfer path 900 connected to the processing unit 300, and a wafer transfer unit, for example, the wafer transfer chuck 10 is movably disposed in the transfer path 900. The wafer transfer chuck 10 receives an unprocessed wafer W from within the carrier 100 on the carrier mounting table 700, and then transfers the processed wafer W to the processing unit 300 and processes the processed wafer W processed by the processing unit 300. It is comprised so that it can carry in.
[0051]
On the other hand, the processing unit 300 is provided with a liquid processing apparatus 20 (hereinafter referred to as the processing apparatus 20) according to the present invention for removing resist, polymer, and the like adhering to the wafer W. The processing apparatus according to the present invention will be described in detail below.
[0052]
As shown in FIG. 11, the processing apparatus 20 is held by a rotatable holding means for holding the wafer W, for example, a rotor 21, a motor 22 that is a rotational driving means for rotationally driving the rotor 21, and the rotor 21. A plurality of, for example, two processing chambers (first processing chamber, second processing chamber) inner chamber 23 and outer chamber 24 surrounding the wafer W, and wafers W accommodated in the inner chamber 23 or the outer chamber 24 On the other hand, a chemical fluid supply means 50 such as a processing fluid such as a resist stripping solution or a polymer removing liquid, a solvent 60 of this chemical liquid such as isopropyl alcohol (IPA), a rinse liquid such as pure water supply means (rinse liquid supply means) 70. Or for example nitrogen (N ₂ ) And the like, and the surrounding position of the wafer W and the wafer W, respectively, for the dry gas supply means 80 such as inert gas and clean air, the inner cylinder 25 constituting the inner chamber 23 and the outer cylinder 26 constituting the outer chamber 24. The moving means, for example, the first and second cylinders 27 and 28 and the wafer W, which are switched from the surrounding position to the standby position, are received from the wafer transfer chuck 10 and transferred to the rotor 21, and are received from the rotor 21 and received by the wafer. A main part is constituted by a substrate transfer means to be processed to be transferred to the transfer chuck 10 (see FIG. 10), for example, a wafer transfer hand 29.
[0053]
The motor 22, the processing fluid supply means 50, 60, 70, 80, the wafer delivery hand 29, etc. in the processing apparatus 20 configured as described above are control means such as a central processing unit 30 (hereinafter referred to as CPU 30). ).
[0054]
The rotor 21 is connected in a cantilever manner to a drive shaft 22a (see FIG. 12) of a motor 22 that is horizontally disposed, and holds the processing surface of the wafer W vertically, with the horizontal axis as the center. It is formed to be rotatable. In this case, the rotor 21 includes a first rotating plate 21a having a rotating shaft 21A coupled to the drive shaft 22a of the motor 22 via a coupling 22b, and a second rotation facing the first rotating plate 21a. It is held by a plate 21b, a plurality of, for example, four fixed holding rods 31 installed between the first and second rotating plates 21a and 21b, and holding grooves (not shown) arranged in the fixed holding rods 31. It is composed of a pair of presser bars 32 that are switched between a presser position and a non-presser position by a lock means and a lock release means (not shown) that hold the upper portion of the wafer W. The rotating shaft 21A of the rotor 21 is rotatably supported by the first fixed wall 34 via a bearing 33, and is moved to the motor 22 side by a labyrinth seal 35 connected to the bearing 33 on the first fixed wall side. The generated particles or the like are configured not to enter the processing chamber (see FIG. 12). The motor 22 is housed in a fixed cylinder 36 that is connected to the first fixed wall 34. Further, the motor 22 is controlled so as to be able to selectively perform a predetermined rotational speed based on a program stored in the CPU 30 in advance.
[0055]
Since the motor 22 may be overheated by switching between high speed rotation and low speed rotation many times, the motor 22 is provided with a cooling means 37 for suppressing overheating. As shown in FIG. 11, the cooling means 37 includes a circulating cooling pipe 37a piped around the motor 22, a part of the cooling pipe 37a and a part of the cooling water supply pipe 37b. The heat exchanger 37c cools the refrigerant liquid sealed in the cooling pipe 37a. In this case, as the refrigerant liquid, an electrically insulating and heat conductive liquid such as ethylene glycol is used so that the motor 22 does not leak even if it leaks. The cooling means 37 is controlled by the CPU 30 so that it can operate based on a signal detected by a temperature sensor (not shown). The cooling means 37 does not necessarily have the structure as described above. For example, an air cooling type or an electric type using a Peltier element can be used.
[0056]
On the other hand, the processing chamber, for example, the inner chamber 23 (first processing chamber) includes a first fixed wall 34, a second fixed wall 38 that faces the first fixed wall 34, and the first fixed wall 34. And the inner cylinder 25 that engages with the second fixed wall 38 via the first and second seal members 40a and 40b, respectively. That is, the inner cylinder 25 is moved to a position that surrounds the rotor 21 and the wafer W by the extension operation of the first cylinder 27 that is the moving means, and the first seal member is interposed between the first fixed wall 34 and the first sealing member 34. The inner chamber 23 (first processing chamber) is formed in a state of being sealed via the second sealing wall 40b and sealed with the second fixed wall 38 (see FIG. 11 and FIG. 11). (See FIG. 12). The inner cylinder 25 is configured to be moved to the outer peripheral side position (standby position) of the fixed cylinder 36 by the contraction operation of the first cylinder 27. In this case, the distal end opening of the inner cylinder 25 is sealed with the first fixed wall 34 via the second seal member 40 b, and the base end of the inner cylinder 25 is the middle part of the fixed cylinder 36. Is sealed through a first seal member 40a to prevent the atmosphere of the chemical solution remaining in the inner chamber 23 from leaking to the outside.
[0057]
The outer chamber 24 (second processing chamber) includes a first fixed wall 34 having a first seal member 40a interposed between the inner cylinder 25 moved to the standby position, and a second fixed wall. 38 and the outer cylinder body 26 engaged between the second fixed wall 38 and the inner cylinder body 25 via third and fourth seal members 40c and 40d, respectively. That is, the outer cylinder 26 is moved to a position surrounding the rotor 21 and the wafer W by the extension operation of the second cylinder 28 as a moving means, and the third seal member is interposed between the second fixed wall 38. The outer chamber 24 (second processing chamber) is formed in a state of being sealed through the fourth sealing member 40d positioned outside the base end portion of the outer cylindrical body 26 while being sealed through the 40c. Further, the second cylinder 28 is configured to be moved to the outer peripheral side position (standby position) of the fixed cylinder 36 by the contraction operation of the second cylinder 28. In this case, a fourth seal member 40d is interposed between the base end portions of the outer cylinder body 26 and the inner cylinder body 25 and sealed. Accordingly, since the inner atmosphere of the inner chamber 23 and the inner atmosphere of the outer chamber 24 are separated from each other in a gas-watertight state, different processing fluids react without the atmosphere in both the chambers 23 and 24 being mixed. Cross contamination that occurs can be prevented.
[0058]
The first to fourth sealing members 40a to 40d are heat-resistant such as ethylene / propylene / diene / rubber (EPDM) or Kalrez (trade name), etc., which are swellably attached to one of the objects to be sealed. It is formed by a sealing mechanism that encloses compressed air in a hollow packing made of synthetic rubber that is rich in chemical resistance and weather resistance.
[0059]
Both the inner cylinder body 25 and the outer cylinder body 26 configured as described above are formed in a tapered shape that expands toward one end, and the first fixed wall 34 and the second fixed wall that face each other on the same horizontal line. The first and second cylinders 27 and 28 are extended and contracted along a plurality of parallel, for example, three guide rails (not shown) installed on the wall 38 and the apparatus side wall 39. By operation, they are formed to be concentrable and superimposable to each other concentrically. Thus, when the inner cylinder 25 and the outer cylinder 26 are formed in a tapered shape that expands toward one end, the rotor 21 is rotated in the inner cylinder 25 or the outer cylinder 26 during processing. The generated airflow flows spirally to the expansion side, and the internal chemicals can be easily discharged to the expansion side. In addition, by setting the inner cylinder body 25 and the outer cylinder body 26 to be superposed on the same axis, the installation space for the inner cylinder body 25, the outer cylinder body 26, the inner chamber 23, and the outer chamber 24 can be reduced. In addition, the apparatus can be miniaturized.
[0060]
The inner cylinder 25 and the outer cylinder 26 are made of stainless steel. Further, a heat insulating layer such as polytetrafluoroethylene (Teflon) is formed on the outer peripheral surface of the inner cylindrical body 25, and the chemical solution and the vapor of the chemical solution used for processing in the inner chamber 23 are cooled by the heat insulating layer. It is comprised so that it can prevent.
[0061]
On the other hand, among the processing fluid supply means, a chemical liquid, for example, a polymer removal liquid supply means 50 includes, as shown in FIGS. 11 to 13, a chemical liquid supply nozzle 51 mounted in the inner cylinder 25, a chemical liquid supply unit 52, and The pump 54, the filter 55, the temperature controller 56, and the opening / closing valve 57 are provided in a chemical solution supply line 53 that connects the chemical solution supply nozzle 51 and the chemical solution supply unit 52. In this case, the chemical supply unit 52 includes a chemical supply source 58, a chemical supply tank 52a for storing a new chemical supplied from the chemical supply source 58, and a circulation supply tank 52b for storing a chemical supplied for processing. The first liquid drain pipe 42 is connected to the first liquid drain port 41 provided at the lower part of the expansion side portion of the inner chamber 23 in both the chemical liquid supply tanks 52a and 52b, A circulation line 90 is connected to the first drain pipe 42 via a switching valve (switching means) not shown. A first exhaust port 43 is provided at the upper part of the expansion side portion of the inner chamber 23. The first exhaust port 43 has a first exhaust pipe provided with an opening / closing valve (not shown). 44 is connected. In addition, a temperature adjusting heater 52c is disposed outside the supply tanks 52a and 52b so that the chemical solution in the supply tanks 52a and 52b is maintained at a predetermined temperature. Further, the chemical solution supply nozzle 51 is positioned outside the outermost wafer W and between the wafers W so that the chemical solution can be uniformly supplied to a plurality of, for example, 25 wafers W held by the rotor 21. The nozzle is formed by a shower nozzle having 26 nozzle holes (not shown), and a chemical solution is ejected in a substantially fan shape from each nozzle hole. Accordingly, by supplying the chemical solution from the nozzle hole of the chemical solution supply nozzle 51 toward the wafer rotating with the rotor 21, the chemical solution can be uniformly supplied to a plurality of, for example, 25 wafers W held by the rotor 21. .
[0062]
As shown in FIG. 13, a chemical solution solvent, for example, IPA supply means 60 includes a supply nozzle 51 (hereinafter represented by the chemical solution supply nozzle 51) that also serves as the chemical solution supply nozzle mounted in the inner cylinder 25, and a solvent. It comprises a supply unit 61, a pump 54 </ b> A, a filter 55 </ b> A, and an IPA supply valve 63 interposed in an IPA supply line 62 connecting the supply nozzle 51 and the solvent supply unit 61. In this case, the solvent supply unit 61 includes a supply source 64 of a solvent, for example, IPA, an IPA supply tank 61a for storing new IPA supplied from the IPA supply source 64, and a circulation supply for storing IPA used for processing. The first drainage pipe connected to the first drainage port 41 provided in the lower part of the expansion side portion of the inner chamber 23 is formed in both the IPA supply tanks 61a and 61b. A circulation line 90 is connected to 42 through a switching valve (switching means) (not shown).
[0063]
On the other hand, the rinsing liquid, for example, pure water supply means 70, as shown in FIGS. 11 to 13, includes a pure water supply nozzle 71 attached to the second fixed wall 38, a pure water supply source 72, and a pure water supply nozzle. 71 and a pure water supply valve 75 provided with a pure water supply pipe 73 connecting the pure water supply source 72 and a pure water supply valve 75. In this case, the pure water supply nozzle 71 is disposed outside the inner chamber 23 and so as to be located inside the outer chamber 24, and the inner cylinder 25 moves backward to the standby position, and the outer cylinder When the body 26 moves to a position surrounding the rotor 21 and the wafer W to form the outer chamber 24, the body 26 is located in the outer chamber 24 and is configured to supply pure water to the wafer W. Yes.
[0064]
Further, a second drain port 45 is provided at the lower part of the expansion side portion of the outer chamber 24, and the second drain port 45 is provided with a second drain valve that is not shown. A drain pipe 46 is connected. The second drain pipe 46 is provided with a specific resistance meter 47 for detecting the specific resistance value of pure water, and the specific resistance value of pure water subjected to rinsing treatment by the specific resistance meter 47. Is detected, and the signal is transmitted to the CPU 30. Therefore, the specific resistance meter 47 monitors the condition of the rinsing process, and after the appropriate rinsing process is performed, the rinsing process can be terminated.
[0065]
A second exhaust port 48 is provided in the upper part of the expansion side portion of the outer chamber 24, and the second exhaust port 48 is provided with a second exhaust through an on-off valve (not shown). A tube 49 is connected.
[0066]
Further, as shown in FIGS. 11 to 13, the drying fluid supply means 80 includes a drying fluid supply nozzle 81 attached to the second fixed wall 38 and a drying fluid such as nitrogen (N ₂ ) Supply source 82, dry fluid supply nozzle 81 and N ₂ On-off valve 84, filter 85, N provided in a dry fluid supply line 83 connecting to the supply source 82 ₂ N in the dry fluid supply line 83. ₂ A branch line 88 branched from the IPA supply line 62 is connected to the secondary side of the temperature controller 86 via a switching valve 87. In this case, the dry fluid supply nozzle 81 is located outside the inner chamber 23 as well as the pure water supply nozzle 71, and is disposed so as to be located inside the outer chamber 24. Is retracted to the standby position, and the outer cylinder 26 moves to a position surrounding the rotor 21 and the wafer W to form the outer chamber 24. ₂ It is comprised so that the mixed fluid of gas and IPA can be supplied in the shape of a mist. In this case, N ₂ After drying with a mixed fluid of gas and IPA, further N ₂ Dry with gas only. Here, the drying fluid is N ₂ The case where the mixed fluid of gas and IPA has been described. ₂ Only gas may be supplied.
[0067]
Note that the pumps 54 and 54A, the temperature controller 56, N in the chemical solution supply means 50, the IPA supply means 60, the pure water supply means 70, and the dry fluid supply means 80. ₂ The temperature controller 86, the on-off valve 57, the IPA supply valve 63, and the switching valve 87 are controlled by the CPU 30 in the same manner as in the first embodiment (see FIG. 11).
[0068]
In addition, the processing apparatus 20 comprised as mentioned above is arrange | positioned in the processing space which has a filter unit (not shown) above, and clean air is always flowing down.
[0069]
Next, an operation mode of the cleaning / drying processing apparatus will be described. First, the carrier 100 storing the unprocessed wafer W loaded into the carrier loading unit 201 of the loading / unloading unit 200 is transferred onto the carrier mounting table 700 by the carrier transfer means 800. Next, the wafer transfer chuck 10 moves onto the carrier mounting table 700 to carry the wafer W out of the carrier 100, and the received wafer W is above the processing apparatus 20 of the processing unit 300, that is, the inner cylinder 25 and The outer cylinder 26 is conveyed to a position above the rotor 21 in a state where the outer cylinder 26 is retracted to the standby position. Then, the wafer delivery hand 29 is raised to receive the wafer W carried by the wafer carrying chuck 10, and then lowered to deliver the wafer W onto the fixed holding rod 31 of the rotor 21, and then the wafer delivery hand 29. Move to the original position. After delivering the wafer W onto the fixed holding bar 31 of the rotor 21, a locking means (not shown) is operated, and the wafer pressing bar 32 moves to the upper edge of the wafer W to hold the upper part of the wafer W.
[0070]
When the wafer W is set on the rotor 21 as described above, the inner cylinder 25 and the outer cylinder 26 move to a position surrounding the rotor 21 and the wafer W, and the wafer W is accommodated in the inner chamber 23. . In this state, first, a chemical solution is supplied to the wafer W to perform a chemical treatment. In this chemical treatment, the chemical solution is supplied for a predetermined time (for example, 3 seconds) while the rotor 21 and the wafer W are rotated at a low speed, for example, 35 rpm, and the supplied chemical solution is brought into contact with the surface of the wafer W. After supplying the chemical solution for a predetermined time (for example, 3 seconds) while the wafer W is rotated at medium speed, for example, 150 rpm, the chemical solution is brought into fluid contact with the surface of the wafer W, and then the supply of the chemical solution is stopped. The wafer W is rotated at high speed for several seconds, for example, at 800 rpm, and the chemical solution in the reaction layer contacting the surface of the wafer W is shaken off and removed. In this case, the chemical solution removal time is set shorter than the chemical solution supply contact / fluid contact time, and the removal is performed quickly. The chemical solution supply contact / fluid contact time is set longer than the removal time, so that The reaction can be promoted with uniform and sufficient contact. On the contrary, depending on the set values of the chemical solution or the low-speed rotation speed, the medium-speed rotation speed, and the high-speed rotation speed, the treatment effect can be improved by making the chemical liquid removal time longer than the chemical liquid supply contact / flow contact time. This chemical solution supply contact step, chemical solution flow contact step, and chemical solution removal step are repeated several to several thousand times to complete the chemical solution processing (chemical solution supply contact / chemical solution flow contact / chemical solution removal processing).
[0071]
In the chemical solution processing step, as the chemical solution supplied first, the chemical solution stored in the circulation supply tank 52b is used, and this first used chemical solution is discarded from the first drain pipe 42, and the subsequent processing. The chemical solution supplied to circulates and supplies the chemical solution stored in the supply tank 52b. Then, at the end of the chemical processing, the new chemical supplied from the chemical supply source 58 into the supply tank 52a is used, and the chemical processing ends.
[0072]
In the chemical treatment process, the chemical used for the chemical treatment is discharged into the first drain port 41, and the operation of a switching valve (not shown) causes the circulation line 90 of the chemical supply unit 52 or While being discharged to the first drain pipe 42, the gas generated from the chemical liquid is exhausted from the first exhaust pipe 44 via the first exhaust port 43.
[0073]
After performing the chemical treatment, the wafer W is housed in the inner chamber 23, and the predetermined value is obtained by rotating the chemical solution supply nozzle 51 that also serves as the IPA supply nozzle of the IPA supply means 60 at a low speed, for example, 35 rpm. IPA is supplied for a time (for example, 3 seconds) to supply and contact the surface of the wafer W, and then the rotor 21 and the wafer W are rotated at a medium speed (for example, 150 rpm) for a predetermined time (for example, 3 seconds). After the IPA is supplied and the IPA is brought into fluid contact with the surface of the wafer W, the supply of the IPA is stopped, and then the rotor 21 and the wafer W are rotated at a high speed, for example, 800 rpm for several seconds to adhere the IPA adhering to the wafer W surface. Shake off and remove. This chemical solution removal process (IPA supply contact / IPA fluid contact / IPA removal process) is completed by repeating the IPA supply contact process, the IPA fluid contact process, and the IPA removal process several times to several thousand times. In this case, as described above, after the IPA supply contact step and the IPA fluid contact step are performed simultaneously, the IPA removal step may be performed.
[0074]
Also in this chemical solution removal process, the IPA stored in the circulation supply tank 61b is used as the first supplied IPA in the same manner as in the chemical solution processing step, and the IPA used first is the first drainage liquid. The IPA discarded from the pipe 42 and used for the subsequent processing circulates and supplies the IPA stored in the supply tank 61b. Then, at the end of the chemical removal process, the new IPA supplied from the IPA supply source 64 into the supply tank 61a is used, and the chemical removal process ends.
[0075]
In the chemical solution removal process, the IPA subjected to the chemical solution removal process is discharged to the first drain port 41, and the operation of a switching valve (not shown) causes the circulation line 90 of the solvent supply unit 61 or the first flow line 90 to be discharged. While being discharged to the drain pipe 42, the IPA gas is exhausted from the first exhaust pipe 44 via the first exhaust port 43.
[0076]
After the chemical liquid process and the chemical liquid removal process are completed, the inner cylinder 25 is retracted to the standby position, and the rotor 21 and the wafer W are surrounded by the outer cylinder 26, that is, the wafer W is accommodated in the outer chamber 24. In this state, first, a rinsing liquid, for example, pure water, is supplied to the rotating wafer W from the pure water supply nozzle 71 of the rinsing liquid supply means to perform a rinsing process. The pure water subjected to the rinsing process and the removed IPA are discharged from the second drain pipe 46 through the second drain port 45. The gas generated in the outer chamber 24 is discharged to the outside from the second exhaust pipe 49 via the second exhaust port 48.
[0077]
In the pure water rinsing step, the pure water supply contact step, the pure water flow contact step, and the removal step may be sequentially repeated as in the chemical solution treatment step.
[0078]
After the rinsing process is performed for a predetermined time in this way, the N of the dry fluid supply means 80 is kept in a state where the wafer W is accommodated in the outer chamber 24. ₂ N from the gas supply source 82 and the IPA supply source 64 ₂ By supplying a mixed fluid of gas and IPA to the rotating wafer W and removing pure water adhering to the wafer surface, the wafer W and the outer chamber 24 can be dried. N ₂ After drying with a mixed fluid of gas and IPA, N ₂ By supplying only the gas to the wafer W, the drying of the wafer W and the inside of the outer chamber 24 can be performed more efficiently.
[0079]
As described above, after the chemical processing, chemical removal processing, rinsing processing and drying processing of the wafer W are completed, the outer cylinder 26 is retracted to the standby position on the outer peripheral side of the inner cylindrical body 25, while unlocking not shown. The means operates to retract the wafer pressing bar 32 from the pressing position of the wafer W. Then, the wafer delivery hand 29 rises and receives the wafer W held by the fixed holding rod 31 of the rotor 21 and moves upward of the processing apparatus 20. The wafer W moved to the upper side of the processing apparatus is received by the wafer transfer chuck 10, transferred to the interface unit 400, and transferred into the carrier 100 on the carrier mounting table 700. The carrier 100 containing the processed wafers W is transferred to the carrier transfer unit 202 by the carrier transfer means 8 and then transferred to the outside of the apparatus.
[0080]
In the above embodiment, the liquid processing method and the liquid processing apparatus according to the present invention have been described as applied to a semiconductor wafer cleaning / drying processing apparatus. However, the present invention can also be applied to LCD glass substrates other than semiconductor wafers. Of course.
[0081]
【The invention's effect】
As described above, according to the present invention, since it is configured as described above, the following effects can be obtained.
[0082]
1) Claim 1, 2, 3, 4 According to the described invention, the processing liquid is supplied to the surface of the substrate to be processed, the flow rate of the processing liquid contacting the surface of the substrate to be processed is increased while supplying the processing liquid, and then the supply of the processing liquid is stopped, By sequentially repeating the process of removing the processing liquid that comes into contact with the surface of the processing substrate, the processing liquid can be reliably applied to the holes (holes) formed in the surface of the processing target substrate and the deposits, for example, the polymer adhering to the groove. In the state of contact, the treatment liquid can be diffused on the surface of the substrate to be treated, and then the deposit (polymer) can be removed together with the treatment liquid. Accordingly, the processing efficiency can be improved, and a desired liquid processing can be performed with a small amount of processing liquid.
[0083]
2) Further, when the treatment liquid is removed, the amount of the treatment liquid used can be reduced by stopping the supply of the treatment liquid. Therefore, effective use of the treatment liquid can be achieved.
[0084]
3) Claim 1,5 According to the invention described above, after sequentially performing the above steps, the substrate to be processed is rinsed and dried to ensure that the deposits (polymer) and the processing liquid adhering to the surface of the substrate to be processed are removed. Can be removed. Therefore, in addition to the above 1), the processing reliability of the substrate to be processed can be further improved.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing a first embodiment of a liquid processing apparatus according to the present invention.
FIG. 2 is a schematic side view illustrating a chemical solution supply contact step, a chemical solution flow contact step, and a chemical solution removal step in the liquid treatment method of the present invention.
FIG. 3 is a flowchart showing a procedure of the chemical solution supply contact step, the chemical solution flow contact step, and the chemical solution removal step.
FIG. 4 is a graph showing the relationship between the number of rotations of the substrate to be processed and the discharge state of the chemical solution in the chemical solution supply contact step, the chemical solution flow contact step, and the chemical solution removal step.
FIG. 5 is an enlarged cross-sectional view (a) showing a contact state between a polymer adhering to the surface of a substrate to be processed and a chemical solution, and a cross-sectional view (b) taken along line AA in FIG.
FIG. 6 is a schematic side view showing an IPA supply contact step, an IPA fluid contact step, and an IPA removal step in the liquid treatment method of the present invention.
FIG. 7 is a flowchart showing procedures of the IPA supply contact step, the IPA fluid contact step, and the IPA removal step.
FIG. 8 is a schematic side view showing an IPA supply step and an IPA removal step in the liquid processing method of the present invention.
FIG. 9 is a flowchart showing a procedure of the IPA supply process and the IPA removal process.
FIG. 10 is a schematic plan view showing a cleaning / drying processing apparatus to which the liquid processing apparatus according to the second embodiment of the present invention is applied.
FIG. 11 is a schematic configuration diagram of the liquid processing apparatus.
FIG. 12 is a cross-sectional view of a main part of the liquid processing apparatus.
FIG. 13 is a schematic piping diagram showing a piping system in the liquid processing apparatus.
FIG. 14 is a schematic cross-sectional view showing a flow rate distribution of a processing solution in a conventional cleaning method.
FIG. 15 is an enlarged cross-sectional view (a) showing a contact state between a polymer adhering to the surface of a substrate to be processed and a chemical solution in a conventional liquid processing method, and a cross-sectional view (b) taken along line BB in FIG. .
[Explanation of symbols]
W Semiconductor wafer (substrate to be processed)
1 Spin chuck (holding means)
2 Motor (Rotary drive means)
3 Treatment liquid supply means
3A Chemical solution supply means
3B IPA supply means
3a Nozzle supply nozzle
3b Chemical liquid supply source
5 CPU (control means)
21 Rotor (holding means)
22 Motor (Rotary drive means)
30 CPU (control means)
50 Chemical supply means
51 Chemical supply nozzle (IPA supply nozzle)
60 IPA supply means (solvent supply means)

Claims (5)

Supply the processing liquid to the surface of the substrate to be processed while rotating the substrate to be processed at a low speed for a predetermined time ,
While supplying the processing substrate to the surface of the substrate to be processed while rotating the substrate to be processed for a predetermined period of time ,
Thereafter, the supply of the processing liquid is stopped, and the process of removing the processing liquid in contact with the surface of the substrate to be processed while rotating the substrate to be processed at a high speed is sequentially repeated.
A liquid processing method characterized by comprising a step of rinsing a substrate to be processed and a step of drying the substrate to be processed after sequentially repeating the above steps . In the liquid processing method of Claim 1 ,
The liquid processing method, wherein the low-speed rotation is 1 to 150 rpm, the medium-speed rotation is 100 to 500 rpm, and the high-speed rotation is 500 to 3000 rpm. A holding means for holding the substrate to be processed; a rotation driving means for rotating the holding means; a processing liquid supply means for supplying a processing liquid to the surface of the substrate to be processed held by the holding means; and Control means for controlling rotation and supply of the treatment liquid supply means; and rinse liquid supply means for which supply is controlled by the control means ,
Based on the control signal from said control means, said while the target substrate for a predetermined time low speed by supplying the treatment liquid to the surface of the substrate, the substrate to be processed while the target substrate is rotated during deceleration predetermined time supplying a treatment liquid to the surface, then stopping the supply of the processing solution, successively repeated a removing processing solution in contact with the substrate to be processed surface of the substrate while high speed, sequentially the steps A liquid processing apparatus , which is formed so as to perform a process of rinsing a substrate to be processed after being repeatedly performed . In the liquid processing apparatus of Claim 3 ,
The liquid processing apparatus, wherein the low-speed rotation is 1 to 150 rpm, the medium-speed rotation is 100 to 500 rpm, and the high-speed rotation is 500 to 3000 rpm. In the liquid processing apparatus of Claim 3 or 4 ,
A drying gas supply means whose supply is controlled by the control means;
A liquid processing apparatus, comprising: a step of drying a substrate to be processed after performing the rinsing step based on a control signal from the control means.

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