KR20190021418A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus includes a rotation unit that rotates a substrate held by a substrate holding unit housed in a chamber around a rotation axis of a vertical axis, and a discharge port that is provided with a discharge port extending from the discharge port toward the main surface of the substrate held by the rotation unit A first chemical liquid supply unit for supplying a first chemical liquid to the nozzle, a normal first guard surrounding the periphery of the substrate holding unit, and a second chemical liquid supply unit for surrounding the first guard, A processing cup which has a plurality of normal guards including a normal second guard and accommodates the substrate holding unit, an elevation unit for elevating and lowering at least one guard among the plurality of guards, 1 chemical solution supply unit and a control device for controlling the elevation unit, wherein the control device controls at least one of the plurality of guards by a predetermined And the second chemical liquid that is scattered from the substrate rotated by the rotation unit as an image position is set above a predetermined liquid receiving position capable of being received by the guard, and liquids scattered from the substrate are received by the guard A first chemical liquid supply step of supplying the first chemical liquid to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the guard is disposed at the upper position, .

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a chemical liquid. Examples of the substrate include a semiconductor substrate, a substrate for a liquid crystal display, a substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, A ceramic substrate, a solar cell substrate, and the like.

Semiconductor Device In a manufacturing process of a liquid crystal display device, a single-wafer type substrate processing apparatus for processing substrates one by one in order to perform treatment with a chemical solution on the surface of a substrate such as a semiconductor substrate may be used . This single wafer processing type substrate processing apparatus includes a spin chuck for holding and rotating the substrate substantially horizontally in a chamber, a nozzle for supplying a chemical solution to the substrate rotated by the spin chuck, A treatment cup for receiving and draining the liquid, and a disc-shaped shield plate disposed opposite to the surface (upper surface) of the substrate held by the spin chuck.

The processing cup is, for example, substantially cylindrical with the axis of rotation of the substrate by a spin chuck as a central axis, and an opening (upper opening) is formed at the upper end thereof. The treatment cup is provided with a cup which is fixedly accommodated and a guard which is capable of lifting and descending with respect to the cup and which is capable of receiving the chemical liquid scattering from the substrate being rotated by the spin chuck. Conventionally, at the time of liquid processing of the substrate, at least the height position of the guard at the outermost side is set at a predetermined liquid receiving position capable of receiving the chemical liquid scattering from the substrate by the guard.

In this state, while the substrate is rotated by the spin chuck, the chemical liquid is supplied from the nozzle to the surface of the substrate, whereby the surface of the substrate is treated with the chemical liquid. The chemical liquid supplied to the surface of the substrate receives the centrifugal force due to the rotation of the substrate and is scattered laterally from the peripheral edge of the substrate. Then, the chemical liquid scattered laterally is received by the guard, is supplied to the cup along the inner wall of the guard, and is thereafter drained.

Japanese Patent Application Laid-Open No. 9-97757

However, even if the height position of the guard receiving position is sufficient to attain the purpose of receiving the chemical liquid scattering from the substrate, in the case of the low height position, even if the inside of the processing cup is exhausted by the exhaust mechanism, There is a fear that the atmosphere including the mist of the chemical solution in the inside of the processing cup flows out of the processing cup through the upper opening of the processing cup and diffuses into the inside of the chamber. The atmosphere containing the mist of the chemical liquid may cause particles to adhere to the substrate to contaminate the substrate or contaminate the inner wall of the chamber, and therefore, it is desirable to suppress or prevent such an atmosphere from diffusing to the surroundings desirable.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of suppressing diffusion of an ambient atmosphere containing a chemical liquid supplied to a main surface of a substrate.

A rotation unit for rotating the substrate held by the substrate holding unit about a vertical axis of rotation; and a rotation unit for rotating the substrate held by the rotation unit about a vertical axis of rotation, A nozzle for discharging the liquid from the discharge port toward the main surface of the substrate held by the rotating unit, a first chemical liquid supply unit for supplying the first chemical liquid to the nozzle, A processing cup for holding the substrate holding unit and having a plurality of normal guards including a normal first guard surrounding the first guard and a normal second guard surrounding the first guard, An elevation unit for elevating and lowering at least one guard, and a control device for controlling the rotation unit, the first chemical solution supply unit, and the elevation unit, The control device controls at least one guard of the plurality of guards to move upward from a predetermined liquid receiving position capable of receiving the first liquid medicament scattering from the substrate rotated by the rotation unit as a predetermined image position by the guard In a state in which the liquid is scattered from the substrate and is capable of being received by the guard, and a controller for controlling the rotation of the substrate by the rotation unit And a first chemical liquid supply step of supplying a first chemical liquid to the main surface of the substrate while performing the first chemical liquid supply step.

According to this configuration, the first chemical solution is supplied to the main surface of the substrate in the rotating state in a state in which at least one of the plurality of guards is arranged at an upper position set above the liquid receiving position. In a state in which at least one guard among the plurality of guards is disposed at the upper position, a large distance is secured between the upper opening of the processing cup and the substrate. In the first chemical liquid supply step, mist of the chemical liquid is generated by the supply of the first chemical liquid to the substrate. However, since the distance between the upper opening of the processing cup and the substrate is secured, , And does not flow well out of the processing cup through the upper opening of the processing cup. Thereby, it is possible to provide a substrate processing apparatus capable of suppressing the diffusion of the atmosphere including the first chemical liquid supplied to the main surface of the substrate to the atmosphere.

According to an embodiment of the present invention, there is provided an opposing member having a substrate facing surface facing upwardly with respect to an upper surface of a substrate held by the substrate holding unit, the opposing member being disposed above the guard, And an opposing member which forms an annular gap between the upper end of the guard and the upper end of the guard in a deployed state.

According to this configuration, in order for the atmosphere inside the processing cup to flow out to the inside of the chamber, not only the atmosphere in the processing cup flows out of the processing cup through the upper opening but also the upper end of the guard It is necessary to reach the inside of the chamber through the annular gap between the substrate facing surfaces. In this case, by setting the image position of the guard so that the annular gap is narrowed, the amount of the atmosphere flowing into the chamber through the annular gap can be effectively suppressed or prevented.

The apparatus further comprises a nozzle arm which is pivotable around a predetermined swing axis set outside the rotation range of the substrate to hold the nozzle and move the nozzle along the main surface of the substrate held by the substrate holding unit . In this case, the annular gap may be set to be larger than the vertical width of the nozzle arm so that the nozzle arm can extend over and around the rotation range.

According to this configuration, by setting the annular gap to such a size, the nozzle arm can be passed through the inside and outside of the rotation range while passing through the annular gap. By making the annular gap as small as possible, the annular gap can be set to a minimum size within a range allowing passage of the nozzle arm. In this case, the amount of the atmosphere flowing from the inside of the processing cup to the inside of the chamber can be effectively reduced. This makes it possible to further effectively suppress the diffusion of the atmosphere around the atmosphere containing the first chemical liquid.

The substrate processing apparatus includes a nozzle that is swingably movable around a predetermined swing axis set on a side of the substrate holding unit for holding the nozzle and moving the nozzle along a main surface of the substrate held by the substrate holding unit, And may further include an arm. In this case, the upper value is a position at which the first gap between the upper end of the guard and the lower end of the nozzle arm in a state in which they are disposed at the upper position is narrower than the second gap between the lower end of the nozzle arm and the discharge port .

According to this configuration, by setting the magnitude relationship between the first gap and the second gap in this way, the amount of the atmosphere flowing out from the processing cup to the inside of the chamber can be effectively reduced. This makes it possible to further effectively suppress the diffusion of the atmosphere around the atmosphere containing the first chemical liquid.

The upper value may be a position where the upper end of the guard in the state of being located at the upper position is located above the intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit.

According to this configuration, by setting the image position to the above-described position, the amount of the atmosphere that flows out from the processing cup to the inside of the chamber can be effectively reduced. This makes it possible to further effectively suppress the diffusion of the atmosphere around the atmosphere containing the first chemical liquid.

The apparatus may further include a second chemical liquid supply unit for supplying a second chemical liquid different in kind from the first chemical liquid to the main surface of the substrate. In this case, the control device further controls the second chemical liquid supply unit, and the control device controls the first guard so that the first guard is positioned below the substrate held by the substrate holding unit, In a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiver position, A second chemical liquid supply step for supplying the second chemical liquid to the main surface of the substrate while rotating the substrate by the rotation unit may be further performed.

According to this configuration, the second chemical liquid supply step is performed in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiver position. Therefore, in the second chemical liquid supply step, the second chemical liquid scattering from the substrate can be favorably received by the second guard at the liquid receiver position.

The control device may execute the step of disposing the first and second guards at the upper position as the upper position disposing step.

According to this configuration, in a state in which the first and second guards are disposed at the upper position, the first chemical liquid supply step is executed. Therefore, in the first chemical liquid supply step, the first chemical liquid that splashes from the substrate can be well received by the first guard while arranging the first guard as high as possible. As a result, in the first chemical liquid supply step, the diffusion of the atmosphere containing the first chemical liquid into the surroundings can be suppressed more effectively.

The apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. The control device may further include a step of disposing the first and second guards at the liquid receiving position, and a step of, when the first and second guards are disposed at the liquid receiving position, A water supply step of supplying water to the main surface of the substrate while rotating the substrate may be further performed.

According to this configuration, in a state in which the first and second guards are disposed at the liquid receiver positions, the water supply step is executed. Therefore, in the water supply step, water scattering from the substrate can be favorably received by the first guard at the liquid receiver position.

In the water supplying step, since the chemical liquid mist is hardly present around the main surface of the substrate, even when the first guard is located at the liquid receiving position, there is almost no leakage of the chemical liquid mist from the processing cup to the inside of the chamber.

The control device may execute the step of disposing the first guard at the liquid receiving position and disposing the second guard at the upper position as the image positioning step.

According to this configuration, in the state that the first guard is disposed at the liquid receiver position and the second guard is disposed at the upper position, the first chemical liquid supply step is executed. By arranging the second guard at the upper position as high as possible, it is possible to prevent the mist of the first chemical liquid from flowing out of the processing cup. Therefore, in the first chemical liquid supply step, while the first chemical liquid scattering from the substrate is received as the first guard at the liquid receiver position, the outflow of the atmosphere containing the mist of the first chemical liquid into the processing cup can be suppressed have. As a result, in the first chemical liquid supply step, the diffusion of the atmosphere containing the first chemical liquid into the surroundings can be suppressed more effectively.

The apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. Wherein the control device includes a step of disposing the first guard at a lower position located at an upper end lower than a substrate held by the substrate holding unit and disposing the second guard at the liquid receiving position, A water supply device for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position, The process may be further executed.

According to this configuration, the water supply step is executed in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiver position. Therefore, in the water supply step, water scattering from the substrate can be favorably received by the second guard at the liquid receiver position.

Further, in the first chemical liquid supply step, since the first guard is disposed at the liquid receiver position and the second guard is disposed at the upper position, after the first chemical liquid supply step, There is a possibility that the mist of the first chemical liquid adheres to the wall of the space. However, in the water supply process, it can be supplied to the inner space partitioned between the first guard and the second guard. Therefore, even when the mist of the first chemical liquid adheres to the wall of the inner space partitioned between the first guard and the second guard, the mist of the first chemical liquid can be rinsed with water by executing the water supply step .

The control device may execute the water supply step before and / or after the first chemical liquid supply step and / or before and / or after the second chemical liquid supply step.

According to this configuration, the first and second chemical liquid supply processes using different kinds of chemical liquids are executed in the common chamber. The water supply step is executed before and / or after the first chemical liquid supply step and / or before and / or after the second chemical liquid supply step.

There is a case where the mist of the first chemical liquid is adhered to the wall of the inner space partitioned between the first guard and the second guard after the completion of the first chemical liquid supply step and / or before the start of the second chemical liquid supply step. In this case, water can be supplied to the internal space after the completion of the first chemical liquid supply step and / or before the start of the second chemical liquid supply step, whereby the first chemical liquid It is possible to rinse out the mist. Therefore, at the start of the second chemical liquid supply step, the mist of the first chemical liquid does not remain on the wall of the inner space. Therefore, even if the second chemical liquid enters the inner space in the second chemical liquid supply step, the second chemical liquid does not come into contact with the first chemical liquid. This makes it possible to prevent the first chemical liquid and the second chemical liquid from interfering with each other in the interior space.

The apparatus may further include a partitioning plate for vertically dividing the lateral region of the substrate holding unit into an upper space on the upper side and a lower space on the lower side in the chamber. In this case, an air outlet may be open in the lower space, and a gap may be formed between the second guard and the partition plate. The second guard may have an occluding portion for occluding the gap. In a state in which the second guard is disposed at the upper position, the closure part closes the gap, and the second guard is disposed at a predetermined lower position lower than the image position, A gap may be formed.

According to this configuration, when the gap is opened, an airflow flowing inside the chamber flows to both the inner and the lower space of the processing cup. On the other hand, if the gap is closed, the airflow flowing in the chamber does not flow into the lower space, but is gathered inside the processing cup.

When the first chemical liquid supply process is executed in a state that the second guard is in the upper position, airflow from the inside of the chamber to the inside of the process cup can be formed in the first chemical liquid supply process. As a result, the outflow of the atmosphere containing the chemical mist from the processing cup to the inside of the chamber can be suppressed more effectively.

The first chemical liquid may contain a mixture of sulfuric acid and hydrogen peroxide.

A substrate holding unit that is accommodated in the chamber and holds the substrate in a horizontal posture; a rotation unit that rotates the substrate held by the substrate holding unit about a vertical axis of rotation; There is provided a substrate processing method executed in a substrate processing apparatus including a plurality of guards including a normal first guard surrounding a periphery of a holding unit and a normal second guard surrounding the periphery of the first guard, A substrate holding step of holding the substrate by the substrate holding unit, and a step of receiving at least one guard among the plurality of guards by the guard, which splashes the substrate from the substrate rotated by the rotating unit as a predetermined image position Is set at a position above a predetermined liquid receiving position as possible, and the liquid scattering from the substrate can be received by the guard And a first chemical liquid supply step of supplying the first chemical liquid to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the guard is disposed at the upper position , And a substrate processing method.

According to this method, in a state in which at least one guard among a plurality of guards is disposed at an upper position set above the liquid receiving position, the substrate is rotated and the first chemical liquid is supplied to the main surface of the substrate. In a state in which at least one guard among the plurality of guards is disposed at the upper position, a large distance is secured between the upper opening of the processing cup and the substrate. In the first chemical liquid supply step, mist of the chemical liquid is generated by the supply of the first chemical liquid to the substrate. However, since the distance between the upper opening of the processing cup and the substrate is secured, , And does not flow well out of the processing cup through the upper opening of the processing cup. As a result, it is possible to provide a substrate processing method capable of suppressing the diffusion of the atmosphere including the first chemical liquid supplied to the main surface of the substrate to the surroundings.

In one embodiment of the present invention, the method further comprises the step of disposing the first guard at a lower position located below the upper end of the substrate held by the substrate holding unit, A step of disposing the first guard in the lower position while rotating the substrate by the rotation unit in a state in which the second guard is disposed in the liquid receiving position, And a second chemical liquid supply step of supplying a second chemical liquid to the second chemical liquid supplying step.

According to this method, the second chemical liquid supply step is executed in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiver position. Therefore, in the second chemical liquid supply step, the second chemical liquid scattering from the substrate can be favorably received by the second guard at the liquid receiver position.

The image position arrange- ment step may include the step of disposing the first and second guards at the upper position.

According to this method, in a state in which the first and second guards are arranged at the upper position, the first chemical liquid supply step is executed. Therefore, in the first chemical liquid supply step, the first chemical liquid that splashes from the substrate can be well received by the first guard while arranging the first guard as high as possible. As a result, in the first chemical liquid supply step, the diffusion of the atmosphere containing the first chemical liquid into the surroundings can be suppressed more effectively.

The method includes the steps of disposing the first and second guards at the liquid receiver position, rotating the substrate by the rotation unit in a state where the first and second guards are disposed at the liquid receiver position And a water supply step of supplying water to the main surface of the substrate.

According to this method, the water supply step is executed in a state in which the first and second guards are disposed at the liquid receiving position. Therefore, in the water supply step, water scattering from the substrate can be favorably received by the first guard at the liquid receiver position.

In the water supplying step, since the chemical liquid mist is hardly present around the main surface of the substrate, even when the first guard is located at the liquid receiving position, there is almost no leakage of the chemical liquid mist from the processing cup to the inside of the chamber.

The image position arrange- ment step may include a step of disposing the first guard at the liquid receiver position and disposing the second guard at the image position.

According to this method, the first chemical liquid supply step is executed in a state in which the first guard is disposed at the liquid receiver position and the second guard is disposed at the upper position. By arranging the second guard at the upper position as high as possible, it is possible to prevent the mist of the first chemical liquid from flowing out of the processing cup. Therefore, in the first chemical liquid supply step, while the first chemical liquid scattering from the substrate is received as the first guard at the liquid receiver position, the outflow of the atmosphere containing the mist of the first chemical liquid into the processing cup can be suppressed have. As a result, in the first chemical liquid supply step, the diffusion of the atmosphere containing the first chemical liquid into the surroundings can be suppressed more effectively.

The method includes the steps of disposing the first and second guards at the liquid receiving position, and arranging the first guard at a lower position located at an upper position below the substrate held by the substrate holding unit A step of disposing the second guard at the liquid receiving position, and a step of, when the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position, And a water supply step of supplying water to the main surface of the substrate while rotating the substrate.

According to this method, the water supply step is executed in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiver position. Therefore, in the water supply step, water scattering from the substrate can be favorably received by the second guard at the liquid receiver position.

Further, in the first chemical liquid supply step, since the first guard is disposed at the liquid receiver position and the second guard is disposed at the upper position, after the first chemical liquid supply step, There is a possibility that the mist of the first chemical liquid adheres to the wall of the space. However, in the water supply process, it can be supplied to the inner space partitioned between the first guard and the second guard. Therefore, even when the mist of the first chemical liquid adheres to the wall of the inner space partitioned between the first guard and the second guard, the mist of the first chemical liquid can be rinsed with water by executing the water supply step .

The water supply step may be performed before and / or after the first chemical liquid supply step and / or before and / or after the second chemical liquid supply step.

According to this method, the first and second chemical liquid supply processes using different kinds of chemical liquids are executed in a common chamber. The water supply step is executed before and / or after the first chemical liquid supply step and / or before and / or after the second chemical liquid supply step.

There is a case where the mist of the first chemical liquid is adhered to the wall of the inner space partitioned between the first guard and the second guard after the completion of the first chemical liquid supply step and / or before the start of the second chemical liquid supply step. In this case, water can be supplied to the internal space after the completion of the first chemical liquid supply step and / or before the start of the second chemical liquid supply step, whereby the first chemical liquid It is possible to rinse out the mist. Therefore, at the start of the second chemical liquid supply step, the mist of the first chemical liquid does not remain on the wall of the inner space. Therefore, even if the second chemical liquid enters the inner space in the second chemical liquid supply step, the second chemical liquid does not interfere with the first chemical liquid. This makes it possible to prevent the first chemical liquid and the second chemical liquid from interfering with each other in the interior space.

The above or other objects, features and advantages of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings.

1 is a schematic plan view for explaining the layout of the inside of a substrate processing apparatus according to an embodiment of the present invention.
2A is a schematic sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus;
Fig. 2B is a diagram for specifically explaining the configuration of the periphery of the opposed member included in the processing unit. Fig.
Fig. 3A is a schematic view for explaining the flow of the airflow inside the chamber in a state where the second guard shown in Fig. 2A is in the lower position. Fig.
FIG. 3B is a schematic view for explaining the flow of the airflow inside the chamber when the second guard is in the liquid receiver position; FIG.
FIG. 3C is a schematic view for explaining the flow of the airflow inside the chamber when the second guard is in the upper position. FIG.
4 is a block diagram for explaining an electrical configuration of a main portion of the substrate processing apparatus.
5 is a flowchart for explaining an example of the first substrate processing by the processing unit.
6A to 6B are diagrams for explaining the first substrate processing example.
Figures 6C-6D are schematic illustrations to illustrate the process subsequent to Figure 6B.
FIG. 6E is a schematic view for explaining the process subsequent to FIG. 6D.
7 is an enlarged schematic cross-sectional view showing a configuration example of the lower part of the processing unit.
8A to 8B are diagrams for explaining a second substrate processing example by the processing unit.
8C is a diagram for explaining an example of the second substrate processing by the processing unit.

1 is a schematic plan view for explaining the layout of the interior of the substrate processing apparatus 1 according to the embodiment of the present invention. The substrate processing apparatus 1 is a single wafer type apparatus for processing a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 for processing a substrate W with processing liquid and a carrier C for accommodating a plurality of substrates W processed by the processing unit 2, A transport robot IR and CR for transporting the substrate W between the load port LP and the processing unit 2 and a substrate processing apparatus 1 for controlling the substrate processing apparatus 1 And a control device (3). The carrying robot IR transports the substrate W between the carrier C and the substrate carrying robot CR. The substrate transport robot CR transports the substrate W between the transport robot IR and the processing unit 2. [ The plurality of processing units 2 have, for example, the same configuration.

2A is a schematic sectional view for explaining a configuration example of the processing unit 2. Fig.

The processing unit 2 includes a box-shaped chamber 4 and a single substrate W held in the chamber 4 in a horizontal posture. The processing unit 2 includes a vertical axis A1 extending past the center of the substrate W, (Substrate holding unit) 5 for rotating the substrate W around the wafer W and a substrate facing surface 6 opposed to the upper surface (main surface) of the substrate W held by the spin chuck 5 An SPM feeding unit (first feeding unit) for feeding a sulfuric acid / hydrogen peroxide mixture (SPM) as a first chemical liquid to the opposing member 7 and the substrate W held by the spin chuck 5 An example of the organic solvent (organic solvent having a low surface tension) as the second chemical liquid is provided on the surface (upper surface) of the substrate W held by the spin chuck 5, (second chemical liquid supply unit) 10 for supplying an isopropyl alcohol (IPA) liquid to the spin chuck 5, and an organic solvent supply unit On the surface (upper surface) of the substrate (W) that is not, it includes a water supply unit 11 and the conventional treatment cup surrounding the spin chuck (5) (12) for supplying water as a rinsing liquid.

The chamber 4 is provided with a spin chuck 5 and a box-shaped partition wall 13 for accommodating the nozzle and an air blowing unit 13 for sending clean air (air filtered by the filter) from the upper part of the partition wall 13 into the partition wall 13 And a side region 15 of the processing cup 12 in the chamber 4 in the interior of the chamber 4 is divided into an upper region 15a and a lower region 15b, And a partition plate 16 that divides the upper and lower portions into regions 15b.

The FFU 14 is disposed above the partition 13 and is mounted on the ceiling of the partition 13. [ The control device 3 controls the FFU 14 such that the FFU 14 sends clean air downward into the chamber 4 from the ceiling of the partition wall 13. [

At the lower or bottom of the partition 13, an exhaust port 9 is opened. The exhaust port 9 is connected to an exhaust duct 9a. The exhaust device sucks the atmosphere in the lower space 4a inside the chamber 4 (the space below the partition plate 16 in the vertical direction of the inner space of the chamber 4) 4a.

A downflow (downflow) is formed in the chamber 4 by exhausting the lower space 4a of the chamber 4 while the FFU 14 supplies clean air to the inside of the chamber 4. [ The processing of the substrate W is carried out in a state in which a downflow is formed in the chamber 4. [

The partition plate 16 is disposed between the outer wall of the processing cup 12 and the partition 13 (side partition) of the chamber 4. An inner end portion of the partition plate 16 is disposed along the outer peripheral surface of the outer wall of the processing cup 12. [ The outer end of the partition plate 16 is disposed along the inner surface of the partition 13 (side partition) of the chamber 4. The SPM nozzle 28 and the nozzle arm 29 to be described later are disposed above the partition plate 16. The partition plate 16 may be a single plate or a plurality of plates arranged at the same height. The upper surface of the partition plate 16 may be horizontal or may extend in an oblique direction toward the rotation axis A1.

As the spin chuck 5, a narrow chuck that holds the substrate W horizontally by sandwiching the substrate W therebetween is employed. More specifically, the spin chuck 5 includes a spin motor (rotation unit) 17, a lower spin shaft 18 integrated with the drive shaft of the spin motor 17, And includes a spin base 19 on a disk mounted approximately horizontally. The spin base 19 has an upper surface 19a formed of a flat surface.

A plurality of (three or more, for example, six) sandwiching members 20 are disposed on the periphery of the upper surface 19a of the spin base 19. The plurality of nipping members 20 are arranged at appropriate intervals on the circumference corresponding to the outer circumferential shape of the substrate W in the peripheral edge portion of the upper surface of the spin base 19.

The spin chuck 5 is not limited to the narrow one and may be formed by holding the substrate W in a horizontal posture by, for example, vacuum suctioning the back surface of the substrate W, (Vacuum chuck) which rotates the substrate W held by the spin chuck 5 by rotating the substrate W around the rotation axis line.

The opposing member 7 includes a shielding plate 21 and an upper spin axis 22 formed coaxially with the shielding plate 21. The blocking plate 21 is a disk-shaped disk having a diameter substantially equal to or larger than that of the substrate W. The substrate facing surface 6 forms a lower surface of the shielding plate 21 and is circular opposite to the entire upper surface of the substrate W. [

A cylindrical through hole 23 (see FIG. 2B) that penetrates the shield plate 21 and the upper spin shaft 22 vertically is formed at the center of the substrate facing surface 6. The inner peripheral wall of the through hole 23 is partitioned by a cylindrical surface. A first nozzle 24 and a second nozzle 25, which extend upward and downward, are inserted into the through hole 23, respectively.

A blocking plate rotating unit 26 is coupled to the upper spin shaft 22. The blocking plate rotating unit 26 rotates the upper spin shaft 22 around the rotation axis A2 for each of the blocking plates 21. A shield plate lifting / lowering unit 27 including an electric motor, a ball screw, and the like is coupled to the blocking plate 21. The blocking plate elevating unit 27 elevates and lowers the blocking plate 21 for each of the first and second nozzles 24 and 25 in the vertical direction. The shield plate elevating unit 27 is a structure in which the substrate opposing face 6 of the shielding plate 21 is located close to the upper surface of the substrate W held by the spin chuck 5 The blocking plate 21 and the first and second nozzles 24 and 25 are raised and lowered between a retreat position (see Figs. 2A and 6A, etc.) formed above the proximity position. The blocking plate lifting unit 27 is capable of holding the blocking plate 21 at each position between the close position and the retreat position.

The SPM supply unit 8 includes an SPM nozzle (nozzle) 28, a nozzle arm 29 having the SPM nozzle 28 mounted on the tip end thereof, an SPM pipe 30 connected to the SPM nozzle 28, An SPM valve 31 interposed in the SPM pipe 30 and a nozzle 31 connected to the nozzle arm 29 for swinging the nozzle arm 29 about the swing axis A3 to move the SPM nozzle 28 And a mobile unit 32. The nozzle moving unit 32 includes a motor and the like.

The SPM nozzle 28 is, for example, a straight nozzle for discharging the liquid in a continuous flow state. In this embodiment, a discharge port 28a is formed on the outer circumferential surface of the body of the SPM nozzle 28, and the SPM is discharged from the discharge port 28a in the lateral direction. However, instead of this configuration, a configuration may be employed in which a discharge port is formed at the lower end of the body of the SPM nozzle 28, and SPM is discharged downward from the discharge port 28a.

The SPM pipe 30 is supplied with a sulfuric acid / hydrogen peroxide mixture (SPM) from a sulfuric acid hydrogen peroxide water supply source. In this embodiment, the SPM supplied to the SPM pipe 30 is high temperature (for example, from about 170 ° C to about 180 ° C). The SPM heated to a high temperature is supplied to the SPM pipe 30 by the heat of reaction between the sulfuric acid and the hydrogen peroxide water.

When the SPM valve 31 is opened, the high temperature SPM supplied from the SPM pipe 30 to the SPM nozzle 28 is discharged from the discharge port 28a of the SPM nozzle 28. When the SPM valve 31 is closed, the discharge of the high-temperature SPM from the SPM nozzle 28 is stopped. The nozzle moving unit 32 moves the processing position where the high temperature SPM discharged from the SPM nozzle 28 is supplied to the upper surface of the substrate W and the processing position where the SPM nozzle 28 is located at the side of the spin chuck 5 The SPM nozzle 28 is moved.

Fig. 2B is a view for specifically describing the configuration of the periphery of the opposing member 7 included in the processing unit 2. Fig.

The center shaft nozzle 33 extending vertically is inserted into the through hole 23. The central shaft nozzle 33 includes first and second nozzles 24 and 25 and a conventional casing 34 surrounding the first and second nozzles 24 and 25.

At the lower end of the first nozzle 24, a first discharge port 35 for discharging the liquid downward is formed. At the lower end of the second nozzle 25, a second discharge port 36 for discharging the liquid downward is formed. In this embodiment, each of the first and second nozzles 24 and 25 is an inner tube. The casing (34) extends in the vertical direction along the axis of rotation (A2). The casing (34) is inserted into the through hole (23) in a noncontact state. Therefore, the inner periphery of the shielding plate 21 surrounds the outer periphery of the casing 34 with an interval in the radial direction.

The organic solvent supply unit 10 includes a first nozzle 24 and an organic solvent pipe 37 connected to the first nozzle 24 and communicating with the first discharge port 35, 37 which are installed in the first organic solvent valve 38 and downstream of the first organic solvent valve 38 so as to be connected to the organic solvent pipe 38, And a second organic solvent valve 39 for opening and closing.

A suction pipe (not shown) to which a suction device (not shown) is connected at its tip end is connected to a branching position 40 set between the first organic solvent valve 38 and the second organic solvent valve 39 in the organic solvent pipe 37 41 are connected in a branch. The suction pipe 41 is provided with a suction valve 42 for opening and closing the suction pipe 41.

When the first organic solvent valve 38 is opened, the organic solvent from the organic solvent supply source is supplied to the second organic solvent valve 39. When the second organic solvent valve 39 is opened in this state, the organic solvent supplied to the second organic solvent valve 39 is discharged from the first discharge port 35 toward the center of the upper surface of the substrate W.

When the first organic solvent valve 38 is closed and the second organic solvent valve 39 is opened and the suction valve 42 is opened in the operating state of the suction device, The interior of the downstream portion 43 (hereinafter referred to as " organic solvent downstream portion 43 ") downstream of the branching position 40 in the solvent pipe 37 is exhausted, The organic solvent contained in the suction pipe 43 is drawn into the suction pipe 41. The suction device and the suction valve 42 are included in the suction unit 44.

The water supply unit 11 includes a second nozzle 25 and a water pipe 46 connected to the second nozzle 25 and having an inside communicating with the second discharge port 36 and a water pipe 46 And a water valve 47 for switching the supply and stop of supply of water from the water pipe 46 to the second nozzle 25. When the water valve 47 is opened, water from the water supply source is supplied to the water pipe 46 and discharged from the second discharge port 36 toward the center of the upper surface of the substrate W. The water to be supplied to the water pipe 46 is, for example, carbonated water but is not limited to carbonated water but may be deionized water (DIW), electrolytic ionized water, hydrogenated water, ozone water and diluted concentration ) Of hydrochloric acid.

The processing unit 2 further includes an inert gas pipe 48 for supplying an inert gas to a normal space between the outer periphery of the casing 34 and the inner periphery of the shutoff plate 21, And an inert gas valve 49 mounted thereon. When the inert gas valve 49 is opened, the inert gas from the inert gas supply source passes between the outer periphery of the casing 34 and the inner periphery of the shield plate 21, and is discharged downward from the center of the lower surface of the shield plate 21 . When the inert gas valve 49 is opened in the state where the blocking plate 21 is disposed at the close position, the inert gas discharged from the center of the lower surface of the blocking plate 21 contacts the upper surface of the substrate W, (In a direction away from the rotation axis A1) between the substrate W and the substrate opposing surface 6 of the substrate 21 so that the air in the substrate W and the shield plate 21 is replaced with an inert gas. The inert gas flowing through the inert gas pipe 48 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas but may be another inert gas such as helium gas or argon gas.

2A, the processing cup 12 includes a plurality of cups (first and second cups 51 and 52) fixedly arranged so as to surround the spin chuck 5 in a double manner, A plurality of guards (first and second guards 53, 54) for receiving treatment liquid (SPM, organic solvent or water) scattered around the guide rails Unit) 55 as shown in FIG. The guard elevating unit 55 includes, for example, a ball screw mechanism.

The processing cup 12 is accommodated so as to overlap with the vertical direction and the guard elevating unit 55 elevates at least one of the first and second guards 53 and 54 so that the opening and closing of the processing cup 12 .

The first cup 51 forms an annular shape and surrounds the periphery of the spin chuck 5 between the spin chuck 5 and the cylindrical member 50. The first cup 51 has a shape that is substantially rotationally symmetrical with respect to the axis of rotation A1 of the substrate W. The first cup 51 has a U-shaped cross section and defines a first drainage groove 59 for draining a treatment liquid used for processing the substrate W. [ At the lowest point of the bottom of the first drainage groove 59, a first drainage port (not shown) is opened, and a first drainage line 61 is connected to the first drainage port. The treatment liquid drained through the first drainage piping 61 is sent to a predetermined recovery device or a waste disposal device and is treated in the device.

The second cup 52 forms an annular shape and surrounds the periphery of the first cup 51. The second cup 52 has a shape that is substantially rotationally symmetrical with respect to the axis of rotation A1 of the substrate W. [ The second cup 52 has a U-shaped cross section and defines a second drainage groove 62 for collecting and recovering the processing solution used for processing the substrate W. A second drain port (not shown) is opened at the lowest point of the bottom of the second drain port 62, and a second drain port 64 is connected to the second drain port. The treatment liquid drained through the second drainage piping 64 is sent to a predetermined recovery device or waste disposal device and is treated in the device.

The inner first guard 53 surrounds the spin chuck 5 and has a shape that is substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W by the spin chuck 5. The first guard 53 integrally includes a cylindrical guide portion 66 surrounding the periphery of the spin chuck 5 and a cylindrical processing liquid separation wall 67 connected to the guide portion 66 . The guide portion 66 includes a cylindrical lower end portion 68 surrounding the periphery of the spin chuck 5 and a cylindrical portion 68 extending from the upper end of the lower end portion 68 to the outer side (in a direction away from the rotation axis A1 of the substrate W) A cylindrical recess 70 extending vertically upward from the outer peripheral portion of the upper surface of the thick portion 69 and a cylindrical recess 70 extending inward from the upper end of the recess 70 Shaped upper end portion 71 extending obliquely upward toward a direction perpendicular to the rotation axis A1.

The treatment liquid separation wall 67 extends vertically downward by a small amount from the outer peripheral portion of the thickness portion 69 and is located on the second drainage groove 62. The lower end portion 68 of the guide portion 66 is located on the first drainage groove 59 and the first drain 53 and the first cup 51 are closest to each other and the first drainage groove 59 As shown in Fig. The inner peripheral end of the upper end portion 71 of the guide portion 66 has a circular shape larger in diameter than the substrate W held by the spin chuck 5 when viewed in plan view. The upper end portion 71 of the guide portion 66 may have a linear cross-sectional shape as shown in Fig. 2A or the like, or may extend, for example, while drawing a smooth arc.

The outer second guard 54 surrounds the periphery of the spin chuck 5 on the outer side of the first guard 53 and rotates about the rotation axis A1 of the substrate W by the spin chuck 5 It has a shape that is almost rotationally symmetric. The second guard 54 has a cylindrical portion 72 coaxial with the first guard 53 and a cylindrical portion 72 extending from the upper end of the cylindrical portion 72 toward the center side (a direction approaching the rotation axis A1 of the substrate W) And an annular projecting portion (closing portion) 75 protruding outward at a lower end portion of the cylindrical portion 72, for example. The inner peripheral end of the upper end portion 73 has a circular shape larger in diameter than the substrate W held by the spin chuck 5 when viewed in plan. The upper end portion 73 may have a linear cross-sectional shape as shown in Fig. 2A or the like, or may extend, for example, while drawing a smooth arc. The top end of the upper end portion 73 defines an upper opening 12a (see Fig. 2A) of the processing cup 12.

The cylindrical portion 72 is located on the second drainage groove 62. The upper end portion 73 is formed so as to overlap with the upper end portion 71 of the guide portion 66 of the first guard 53 in the vertical direction and the first guard 53 and the second guard 54 are located closest to each other The upper end portion 71 of the guide portion 66 is formed so as to be close to and maintains a minute gap therebetween. The bending portion 74 is formed so as to overlap with the upper end portion 71 of the guide portion 66 in the horizontal direction in a state in which the first guard 53 and the second guard 54 are closest to each other. The projecting portion 75 has an upper surface of a circular shape formed of a flat horizontal surface.

The guard elevating unit 55 is provided between the image position P1 described below (see FIG. 3B and the like) and the lower position P3 (see FIG. 3C, etc.) where the upper end of the guard is positioned below the substrate W , Each guard is raised and lowered.

The upper position P1 of the first and second guards 53 and 54 is a height position set above the liquid receiving position P2 (see FIG. 3A and the like) described below. The upper position P1 of each guard (the first and second guards 53 and 54) is an annular clearance 86 formed between the upper end of the guard and the opposing member 7 (substrate facing surface 6) 6B) is larger than the vertical width W1 of the nozzle arm 29 (see Fig. 6B).

In other respects, the upper position P1 of each guard is located below the lower end face 29a of the nozzle arm 29 and above the discharge port 28a. 6B) between the upper end of the guard and the lower end face 29a of the nozzle arm 29 (the lower end of the nozzle arm 29) (more specifically, 6A and 6B) 88 between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28 or the second gap (see FIGS. 6A and 6B) Which is narrower than the gap 88. More specifically, the upper position (P1) of each guard is set such that the upper end of the guard is in the middle between the lower end face 29a of the nozzle arm 29 and the upper face of the substrate W held by the spin chuck 5 Which is above the position M (see FIG. 3B).

The guard elevating unit 55 can hold the first and second guards 53 and 54 at an arbitrary position between the upper position P1 and the lower position P3. More specifically, the guard elevating and lowering unit 55 moves the first and second guards 53 and 54 to the upper position P1, the lower position P3, the upper position P1 and the lower position P3) of the receiving position P2. The liquid receiving position P2 of the first and second guards 53 and 54 is a height position in which the upper end of the guard is located above the substrate W. [ Supply of the process liquid to the substrate W and drying of the substrate W are carried out in a state in which any of the guards (the first and second guards 53 and 54) is opposed to the peripheral edge of the substrate W .

Figs. 3A to 3C are diagrams for explaining the height positions of the first and second guards 53 and 54 and the flow of the air current in the chamber 4. Fig. 3A shows a state in which the second guard 54 is disposed at the liquid receiver position P2. 3B shows a state in which the second guard 54 is disposed at the upper position P1. 3C shows a state in which the second guard 54 is disposed at the lower position P3.

As a method of opposing the inner first guard 53 to the peripheral edge of the substrate W, there are the following two methods.

First, as shown by a solid line in Fig. 3B, the first and second guards 53 and 54 are all disposed at the image position P1. The state of the processing cup 12 is hereinafter referred to as " first image position state ". The first and second guards 53 and 54 are arranged at a narrow interval in the horizontal direction with respect to the upper end portion 71 of the guide portion 66. That is, There is overlapping.

The second method is a method in which both the first and second guards 53 and 54 are arranged at the receiving position P2 as indicated by the solid line in Fig. 3A. The state of the processing cup 12 is hereinafter referred to as " first receiving position position state ". The first and second guards 53 and 54 are spaced from each other by a predetermined distance in the horizontal direction so that the first and second guards 53 and 54 are spaced apart from each other by a predetermined distance .

As a method for opposing the outer second guard 54 to the peripheral edge of the substrate W, there are the following two methods.

The first method is a method in which the first guard 53 is disposed at the lower position P3 and the second guard 54 is disposed at the upper position P1 as indicated by the two-dot chain line in Fig. 3B. The state of the processing cup 12 is hereinafter referred to as " second image position state ".

The second method is a method in which the first guard 53 is disposed at the lower position P3 and the second guard 54 is disposed at the liquid receiver position P2 as indicated by the two-dot chain line in Fig. 3A. The state of the processing cup 12 is hereinafter referred to as a " second cup receiving position state ". In the second cup receiving position, the gap between the first and second guards 53, 54 is wide up and down.

3C, the processing cup 12 may prevent any of the guards (the first and second guards 53 and 54) from being opposed to the peripheral edge of the substrate W. In this case, In this state, both the first and second guards 53, 54 are disposed at the lower position P3. Such a state of the processing cup 12 is hereinafter referred to as a " withdrawn state ".

3C, a gap is formed between the projecting portion 75 of the second guard 54 (upper surface) and the partition plate 16 (lower surface) in the retracted state of the processing cup 12 Is about 70 mm). Therefore, when the gas passes between the projecting portion 75 and the partition plate 16, there is almost no pressure loss.

In this state, since the upper end of the second guard 54 is located below the peripheral edge of the substrate W, the tip end of the spin chuck 5 (spin base 19) and the tip end of the second guard 54 The gap between the spin chuck 5 and the second guard 54 is narrow and therefore the pressure loss is large when the gas passes through the gap S0 between the tip of the spin chuck 5 and the second guard 54. [ The downflow DF1 flowing through the interior of the chamber 4 in the retracted state of the processing cup 12 is exclusively passed through between the projecting portion 75 and the partition plate 16, 4a.

3A, the protrusion 75 (the upper surface of the second guard 54) of the processing cup 12 and the partition plate 16 (the upper surface of the second guard 54) (Lower surface) is narrower (about 30 mm in the vertical direction, and about 2 mm in the horizontal direction) although it is narrower than the case of the retracted state. Therefore, the pressure loss at which the gas passes through the gap S between the projecting portion 75 and the partition plate 16 becomes larger than the retracted state. Since the upper end of the second guard 54 is located above the peripheral edge of the substrate W and the clearance S0 between the tip end of the spin chuck 5 and the second guard 54 is in the retracted state The pressure loss when the gas passes between the tip ends of the spin chuck 5 and the second guard 54 is smaller than that in the retracted state (that is, to some extent). The downflow DF2 flowing through the interior of the chamber 4 in the first cup receiving position or the second cup receiving position of the processing cup 12 can be prevented The gap S between the spin chuck 5 and the second guard 54 and the gap S0 between the spin chuck 5 and the tip end of the second guard 54 into the lower space 4a of the chamber 4. [

The upper surface of the projection 75 of the second guard 54 and the lower surface of the partition plate 16 are in contact with each other in the first phase position state or the second phase position state of the processing cup 12 The gap S between the projecting portion 75 and the partition plate 16 is substantially zero (substantially closed). More strictly, the gap in the vertical direction is about 3 mm, Spacing about 2 mm).

In this state, since the upper end of the second guard 54 is located above the peripheral edge of the substrate W, the distance between the spin chuck 5 (spin base 19) and the second guard 54 The gap between the tip ends is very large. Therefore, when the gas passes between the tip end of the spin chuck 5 and the second guard 54, the pressure loss hardly occurs. The downflow DF3 flowing through the interior of the chamber 4 in the first phase position state or the second phase position state of the processing cup 12 can be controlled only by the rotation of the spin chuck 5 and the second guard 54 Passes through the tip end, and enters the lower space 4a of the chamber 4.

Fig. 4 is a block diagram for explaining an electrical configuration of the main part of the substrate processing apparatus 1. Fig.

The control device 3 is configured using, for example, a microcomputer. The control device 3 has a calculation unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit. In the storage unit, a program to be executed by the calculation unit is stored.

The control device 3 controls operations of the spin motor 17, the nozzle moving unit 32, the shield plate rotating unit 26, the shield plate elevating and lowering unit 27, the guard elevating and lowering unit 55, and the like. The control device 3 includes an SPM valve 31, a first organic solvent valve 38, a second organic solvent valve 39, a suction valve 42, a water valve 47, an inert gas valve 49 ) And the like.

Fig. 5 is a flowchart for explaining an example of the first substrate processing by the processing unit 2. Fig. 6A to 6E are diagrams for explaining the first substrate processing example.

Hereinafter, the first substrate processing example will be described with reference to Figs. 2A, 2B, and 5. Fig. Refer to Figs. 3A to 3C and Figs. 6A to 6E as appropriate. The first substrate processing example is a resist removal processing for removing a resist formed on the upper surface of the substrate W. [ As described below, the first substrate processing example includes an SPM supplying step (first chemical liquid supplying step) S3 for supplying the SPM to the upper surface of the substrate W, a liquid organic solvent such as IPA on the substrate W) (second chemical liquid supply step) (S5). SPM and the organic solvent are combinations of chemical solutions accompanied by risk (in this case, abrupt reaction) by intercourse.

When the resist removal processing is performed on the substrate W by the processing unit 2, the substrate W after the ion implantation processing at the altitude is carried into the chamber 4 (step S1 in Fig. 5) . It is assumed that the substrate W to be transferred is not subjected to a process for ashing the resist. On the surface of the substrate W, a fine pattern with a high aspect ratio is formed.

The SPM nozzle 28 is retracted from the upper side of the spin chuck 5 and the first and second spin chucks 4 and 5 are retracted to the retreat position and the opposed member 7 (i.e., the blocking plate 21 and the central axis nozzle 33) In a state in which the two guards 53 and 54 are lowered to the lower position (the upper ends of the first and second guards 53 and 54 are all disposed below the holding position of the substrate W) (See FIG. 1) of the substrate transfer robot CR (see FIG. 1) holding the substrate W enters the inside of the chamber 4. In this case, As a result, the substrate W is transferred to the spin chuck 5 with its surface (resist-formed surface) facing upward. Thereafter, the substrate W is held on the spin chuck 5.

Thereafter, the control device 3 causes the spin motor 17 to start rotating the substrate W (step S2 in Fig. 5). The substrate W is raised to a predetermined liquid processing speed (within a range of about 10 - 500 rpm, for example, about 400 rpm) and is maintained at the liquid processing speed.

Subsequently, the control device 3 performs the SPM supplying step (step S3 in Fig. 5) for supplying the high-temperature SPM to the upper surface of the substrate W. [ In order to peel off the resist from the surface of the substrate W in the SPM supplying step S3, the control device 3 applies a high-temperature SPM from the SPM nozzle 28 to the center of the upper surface of the substrate W, for example, Supply.

Specifically, the control device 3 controls the nozzle moving unit 32 to move the SPM nozzle 28 from the retracted position to the processing position. Thus, as shown in FIG. 6A, the SPM nozzle 28 is disposed above the central portion of the substrate W.

After the SPM nozzle 28 is disposed at the processing position (e.g., the center position), the controller 3 controls the guard elevating unit 55 to rotate the first and second guards 53, 54 (The state of the processing cup 12 is shifted to the first phase position state), and the first guard 53 is opposed to the peripheral edge of the substrate W. Then,

The first gap 87 between the upper end of the second guard 54 and the lower end face 29a of the nozzle arm 29 (as shown in Fig. 6B) Is narrower than the second gap 88 (for example, about 5 mm) between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28. [ The upper end of the second guard 54 is pressed against the lower end surface 29a of the nozzle arm 29 and the lower surface 29b of the substrate W (Refer to FIG. 3B) between the upper surfaces of the first and second guide grooves 22, 23.

After the first and second guards 53 and 54 are lifted, the control device 3 opens the SPM valve 31. Thereby, the SPM at a high temperature (for example, about 170 ° C. to about 180 ° C.) is supplied from the SPM pipe 30 to the SPM nozzle 28, and the discharge port 28a of the SPM nozzle 28 The high temperature SPM is discharged. The high temperature SPM discharged from the SPM nozzle 28 is mixed with the central portion of the upper surface of the substrate W and flows outward along the upper surface of the substrate W under the centrifugal force due to the rotation of the substrate W. As a result, the entire surface of the substrate W is covered with the liquid film of the SPM. The resist is peeled from the surface of the substrate W by the high temperature SPM and is removed from the surface of the substrate W. [ In addition, the supply position of the high-temperature SPM from the SPM nozzle 28 may be moved (scanned) between the upper surface central portion and the upper surface peripheral portion of the substrate W.

The SPM supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the peripheral edge of the substrate W and is received by the inner wall of the first guard 53. [ The SPM falling down along the inner wall of the first guard 53 is collected in the first drainage groove 59 and then guided to the first drainage pipe 61. The drainage processing device for draining the SPM ).

In the SPM supply step S3, a large amount of mist (MI) of the SPM is generated because the SPM used is extremely high (for example, from about 170 DEG C to about 180 DEG C). The mist MI of the SPM generated in a large amount around the upper surface of the substrate W floats on the upper surface of the substrate W by the supply of the SPM to the substrate W.

In the SPM supplying step S3, the height position of the guard (at least the second guard 54) is sufficiently high to attain the purpose of receiving the chemical liquid scattering from the substrate W, The atmosphere including the mist MI of the SPM in the processing cup 12 flows out of the processing cup 12 through the upper opening 12a of the processing cup 12 and flows into the inside of the chamber 4 There is a fear of spreading. The atmosphere containing the mist (MI) of the SPM is caused to become particles and adhere to the substrate W to cause contamination of the substrate W or to contaminate the inner wall of the partition 13 of the chamber 4 It is not preferable that such an atmosphere diffuses to the surroundings.

In the SPM supplying step S3 related to the first substrate processing example, in a state in which the first and second guards 53 and 54 are disposed at the upper position (i.e., in the first image position state of the processing cup 12) The high temperature SPM is supplied to the upper surface of the substrate W in the rotating state. In the first image position state of the processing cup 12, the annular shape formed between the upper end of the second guard 54 in a state of being disposed at the image position P1 and the substrate facing surface 6 of the blocking plate 21, The gap 86 (see FIG. 3B) is set to be narrow. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere containing the mist (MI) of the SPM inside the processing cup (12) from flowing out into the chamber (4).

Since the gap S between the projecting portion 75 and the partition plate 16 becomes substantially zero in the first image position state of the processing cup 12, the downflow DF3 flowing in the chamber 4 is reduced, (See FIG. 3B) passes between the tip end of the spin chuck 5 and the second guard 54, and enters the lower space 4a of the chamber 4. Thus, the outflow of the atmosphere containing the mist (MI) of the SPM from the processing cup 12 into the interior of the chamber 4 can be more effectively suppressed.

3B), the first guard 53 and the second guard 54 are closest to each other. In the state shown in Fig. 3B, the first guard 53 and the second guard 54 are closest to each other. In this state, the bending portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction. The mist MI of SPM floating on the upper surface of the substrate W does not enter between the first guard 53 and the second guard 54 in the SPM supplying step S3. IPA may be attached to the inner wall of the second guard 54 before the start of the SPM supplying step S3. However, since the mist (MI) of the SPM does not enter between the first guard 53 and the second guard 54, the SPM and the IPA are mixed in the processing cup 12 in the SPM supplying step S3 Can be suppressed or prevented. Thereby, it is possible to suppress or prevent the inside of the processing cup 12 from becoming a particle generation source.

When a predetermined period has elapsed from the start of discharge of the high-temperature SPM, the SPM supply step S3 is terminated. More specifically, the control device 3 closes the SPM valve 31 and stops the discharge of the high-temperature SPM from the SPM nozzle 28. The control device 3 also controls the guard elevating and lowering unit 55 to drop the first and second guards 53 and 54 to the receiving position P2. The control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retreat position.

Then, a water supply step (step S4 in Fig. 5) for supplying water as a rinsing liquid to the upper surface of the substrate W is carried out. More specifically, the control device 3 opens the water valve 47. 6C, water is discharged from the central nozzle 33 (the second nozzle 25 (see FIG. 2B)) toward the center of the upper surface of the substrate W. As shown in FIG. The water discharged from the central shaft nozzle 33 is adhered to the central portion of the upper surface of the substrate W and is subjected to centrifugal force by the rotation of the substrate W to transfer the upper surface of the substrate W to the peripheral portion of the substrate W . The SPM on the substrate W flows outward by the water, and is discharged to the periphery of the substrate W. As a result, the liquid film of the SPM on the substrate W is replaced with a liquid film of water covering the entire upper surface of the substrate W. [ That is, the SPM is washed away from the upper surface of the substrate W by the water as the rinsing liquid.

The water flowing on the upper surface of the substrate W is scattered toward the side of the substrate W from the periphery of the substrate W and is received by the inner wall of the first guard 53. [ The water flowing down along the inner wall of the first guard 53 is collected in the first drainage groove 59 and then guided to the first drainage pipe 61. The drainage processing device for draining water ). When the SPM liquid used in the SPM supplying step S3 is attached to the inner wall of the first guard 53, the first drainage groove 59 and the pipe wall of the first drain pipe 61, .

When the predetermined period elapses from the start of the discharge of water, the control device 3 closes the water valve 47 and stops the discharge of the water from the second nozzle 25. [ Thereby, the water supply step S4 is finished.

Subsequently, an organic solvent process (Step S5 in Fig. 5) for supplying IPA as an organic solvent to the upper surface of the substrate W is carried out. More specifically, as shown in Fig. 6D, the control apparatus 3 controls the shield plate elevation unit 27 to arrange the shield plate 21 at a close position. When the blocking plate 21 is in the close position, the blocking plate 21 blocks the upper surface of the substrate W from the space around it.

The control device 3 controls the guard elevating unit 55 to arrange the second guard 54 at the upper position P1 while keeping the first guard 53 at the lower position P3, And the second guard 54 is opposed to the peripheral edge of the substrate W. [

Further, the control device 3 decelerates the rotation of the substrate W at a predetermined paddle speed. This paddle speed means that the centrifugal force acting on the liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W when the substrate W is rotated at the paddle speed, Refers to a speed at which the centrifugal force and the surface tension are almost antagonistic to each other.

After the rotational speed of the substrate W has fallen to the paddle speed, the controller 3 opens the second organic solvent valve 39 and closes the suction valve 42, so that the first organic solvent valve 38 ). As a result, IPA from the organic solvent supply source is supplied to the first nozzle 24, and IPA is discharged from the first nozzle 24 to deposit on the upper surface of the substrate W. [

In the organic solvent step S5, the water contained in the liquid film on the upper surface of the substrate W is successively replaced with IPA by the discharge of IPA from the first nozzle 24. As a result, the liquid film of IPA covering the entire upper surface of the substrate W is held on the upper surface of the substrate W in the form of paddles. The supply of IPA to the upper surface of the substrate W is continued even after the liquid film on the entire upper surface of the substrate W is almost replaced with the liquid film of IPA. Therefore, the IPA is discharged from the peripheral portion of the substrate W.

The IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54. [ The IPA flowing down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64. A processing device (not shown) for draining the IPA, .

The IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54 opposed to the peripheral edge of the substrate W, And is not received by the inner wall of the first guard 53 retracted downward. Further, in the organic solvent step S5, the mist of IPA generated around the substrate W is small, and the mist of the IPA is not guided to the inner wall of the first guard 53. [ In addition, the SPM attached to the first guard 53 in the SPM supplying step S3 is being washed away by the supply of water in the water supplying step S4. Therefore, in the organic solvent step S5, the IPA and the SPM do not interfere with each other.

The controller 3 closes the first organic solvent valve 38 and stops the ejection of the IPA from the second nozzle 25. When the predetermined time elapses from the start of the IPA ejection, Thereby, the organic solvent step S5 is completed.

Then, a spin drying process (step S6 in Fig. 5) for drying the substrate W is performed. More specifically, the control device 3 controls the spin motor 17 while keeping the blocking plate 21 at a position close to the control device 3, The substrate W is accelerated to a drying rotational speed (for example, several thousand rpm) larger than the rotational speed in each step from the step S3 to the organic solvent step S5, and the substrate W is rotated at the drying rotational speed. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid attached to the substrate W is shaken around the substrate W. In this way, liquid is removed from the substrate W, and the substrate W is dried. The controller 3 controls the blocking plate rotating unit 26 to rotate the blocking plate 21 at a high speed in the rotating direction of the substrate W.

In parallel with the spin-drying step S6, an organic solvent sucking step for sucking the organic solvent in the organic solvent pipe 37 is performed. In this organic solvent sucking step, the organic solvent existing in the organic solvent pipe 37 after the organic solvent step S5 is sucked by the sucking unit 44.

More specifically, after the end of the organic solvent step S5, the control device 3 opens the second organic solvent valve 39 and closes the first organic solvent valve 38 while opening the suction valve 42 do. As a result, the interior of the downstream portion 43 of the organic solvent is exhausted, and the IPA existing in the downstream portion 43 of the organic solvent is drawn into the suction pipe 41 (suction). The suction of the IPA is carried out until the front end face of the IPA retracts to the predetermined standby position in the pipe. When the front end face of the IPA is retracted to the standby position, the control device 3 closes the suction valve 42. This makes it possible to prevent dropping (dropping) of IPA from the organic solvent pipe 37 in the spin-drying step S6.

The control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 S7), and also controls the blocking plate rotating unit 26 to stop the rotation of the blocking plate 21. [

Thereafter, the substrate W is carried out from the chamber 4 (step S8 in Fig. 5). Specifically, the control device 3 raises the blocking plate 21 to the retracted position, lowering the second guard 54 to the lower position P3, and moving the first and second guards 53, 54 are disposed below the holding position of the substrate W. Thereafter, the control device 3 allows the hand H of the substrate carrying robot CR to enter the inside of the chamber 4. The control device 3 holds the substrate W on the spin chuck 5 on the hand of the substrate carrying robot CR and moves the hand H of the substrate carrying robot CR from the inside of the chamber 4 It is evacuated. As a result, the substrate W from which the resist has been removed from the surface is taken out of the chamber 4.

According to the first substrate processing example, in the first image position state of the processing cup 12, the SPM supply step S3 is executed. Therefore, in the SPM supplying step S3, the first guard 53 can be well received by the first guard 53 while scattering from the substrate.

In addition, since the guard (the first and second guards 53 and 54) receiving the processing solution is divided in the SPM supplying step S3 and the organic solvent supplying step S5, the SPM and the IPA are mixed in the processing cup 12 Can be suppressed or prevented. Thereby, it is possible to suppress or prevent the inside of the processing cup 12 from becoming a particle generation source.

7 is an enlarged sectional view showing an example of a configuration example of the lower part of the processing unit 2. As shown in Fig.

The water branch pipe 102 and the IPA branch pipe 103 may be connected to the tip of the second drain pipe 64 of the second cup 52. [ That is to say, the flow path of the liquid flowing through the second drainage pipe 64 (the flow path of the liquid passing through the inner space partitioned between the first guard 53 and the second guard 54) The piping 102 and the IPA branch pipe 103). The case where such two branch pipes are employed will be described below.

The storage branch piping 102 is provided with a storage opening / closing valve 105 for opening and closing the storage branch piping 102. The IPA branch pipe 103 is provided with an IPA opening / closing valve 106 for opening and closing the IPA branch pipe 103. Closing valve 105 is opened in a state where the IPA opening / closing valve 106 is closed, the flow of the liquid flowing through the second drainage pipe 64 is set in the receiving branch pipe 102. The IPA open / close valve 106 is opened in a state in which the accommodating opening / closing valve 105 is closed, so that the flow destination of the liquid flowing through the second drainage pipe 64 is set in the IPA branch pipe 103.

8A to 8C are diagrams for explaining a second substrate processing example. The second substrate processing example is not different from the first substrate processing example in the basic processing flow. A second substrate processing example will be described with reference to Figs. 2A, 2B, 5, and 7. Fig. Figures 8A-8C are referenced as appropriate.

The second substrate processing example is different from the first substrate processing example in that, in the SPM supplying step S3, the state of the processing cup 12 is placed in the second phase position state instead of the first phase position state. The second image position state of the process cup 12 is a state in which the first guard 53 is disposed at the liquid receiving position P2 and the second guard 54 is disposed at the upper position. In the SPM supplying step S3, the processing cup 12 is placed in the second phase position, and the wall of the inner space partitioned between the first guard 53 and the second guard 54 There is a possibility that the mist MI of the SPM adheres to the inner wall or the outer wall of the first guard 53. In the water supply step S4, the processing cup 12 is placed in the second liquid receiving position, (The inner wall of the second guard 54 and the inner wall of the first guard 54) to the inner space defined by the first guard 53 and the second guard 54, (MI) of the SPM attached to the outer surface of the second substrate (e.g., the outer wall of the second substrate 53). Hereinafter, the SPM supplying step S3 related to the second substrate processing example will be described in detail.

After the SPM nozzle 28 is disposed at the processing position in the SPM supplying step S3, the control device 3 controls the guard elevating unit 55 to move the first guard 53 to the liquid receiving position P2, The second guard 54 is raised to the image position P1 and the second guard 54 is opposed to the peripheral edge of the substrate W. [

In the second image position state of the processing cup 12, as in the first image position state of the processing cup 12, the gap between the upper end of the second guard 54 and the lower end face 29a of the nozzle arm 29 A first gap 87 (e.g., approximately zero) is formed between the lower end surface 29a of the nozzle arm 29 and the second gap 88 between the discharge port 28a of the SPM nozzle 28 5 mm). The second position of the processing cup 12 is a state in which the upper end of the second guard 54 is connected to the lower end face 29a of the nozzle arm 29 and the substrate W (Refer to FIG. 3B) between the upper surfaces of the first and second guide grooves 22, 23. After the second guard 54 is lifted, the control device 3 opens the SPM valve 31 (see Fig. 2A).

8A, in the SPM supplying step S3 according to this embodiment, the first guard 53 is disposed at the liquid receiver position P2, and the second guard 54 is disposed at the upper position P1 The high temperature SPM is supplied to the upper surface of the substrate W in the rotated state (i.e., in the second image position state of the processing cup 12). The SPM supplied to the upper surface of the substrate W receives centrifugal force by the rotation of the substrate W and splashes laterally from the peripheral edge of the substrate W. [ The SPM scattered laterally is received by the first guard 53 at the receiving position P2 and flows along the inner wall of the first guard 53. [ The SPM for descending the first guard 53 is led to the first drainage pipe 61 and is led to a drainage treatment apparatus (not shown) for draining the SPM.

In addition, in the SPM supplying step S3, a large amount of mist (MI) of the SPM is generated because the SPM to be used is very high temperature (for example, about 170 DEG C to about 180 DEG C). The mist MI of the SPM generated in a large amount around the upper surface of the substrate W floats on the upper surface of the substrate W by the supply of the SPM to the substrate W.

The processing cup 12 is in the second phase position and is in the form of a circular arc formed between the upper end of the second guard 54 in the state of being disposed at the image position P1 and the substrate facing surface 6 of the blocking plate 21. [ The gap 86 (see FIG. 3B) is set to be narrow. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere containing the mist (MI) of the SPM inside the processing cup (12) from flowing out into the chamber (4).

Since the gap S between the projecting portion 75 and the partition plate 16 becomes substantially zero in the second image position state of the processing cup 12, the downflow DF3 flowing in the chamber 4, (See FIG. 3B) passes between the tip end of the spin chuck 5 and the second guard 54, and enters the lower space 4a of the chamber 4. Thus, the outflow of the atmosphere containing the mist (MI) of the SPM from the processing cup 12 into the interior of the chamber 4 can be more effectively suppressed.

In the SPM supplying step S3 of this second substrate processing example, the mist (MI) of the SPM enters an inner space defined between the first guard 53 and the second guard 54, and as a result, the mist May be attached to the wall of the inner space (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.).

After the end of the SPM supplying step S3, the control device 3 controls the guard elevating and lowering unit 55 to lower the first guard 53 from the liquid receiving position P2 to the lower position P3, The second guard 54 is lowered from the upper position P1 to the lower receiving position P2. That is, the state of the processing cup 12 is shifted to the second receiving position. In the second cup receiving position of the processing cup 12, the second guard 54 faces the peripheral edge of the substrate W. The controller 3 closes the IPA on-off valve 106 and opens the on-off switching valve 105 prior to the discharge of the water so that the flow path of the liquid flowing through the second drain pipe 64 is branched from the receiving branch And set in the piping 102. After the start of descent of the first guard 53, the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retreat position.

Then, a water supply step (step S4 in Fig. 5) is carried out. More specifically, the control device 3 opens the water valve 47. 8B, water is discharged from the second nozzle 25 (see Fig. 2B) of the central axis nozzle 33 toward the center of the upper surface of the substrate W. The center axis of the central axis nozzle 33, Water flows from the upper surface of the substrate W toward the peripheral portion of the substrate W by receiving centrifugal force by the rotation of the substrate W. [

The water supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the periphery of the substrate W and is separated from the inner space of the substrate W by the space between the first guard 53 and the second guard 54 (The inner wall of the second guard 54, the outer wall of the first guard 53, and the like) and is received by the inner wall of the second guard 54. [ The water draining along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64. In the water supply step S4 of the second substrate processing example, since the circulation path of the liquid flowing through the second drain pipe 64 is set in the receiving branch pipe 102 (see Fig. 7), the second drain pipe 64, Is supplied to the storage branch piping 102 and then sent to a treatment apparatus (not shown) for draining the water.

After the SPM supply step S3 described above, the inner wall of the inner space (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.) partitioned between the first guard 53 and the second guard 54 There is a possibility that the mist (MI) of the SPM is attached. However, in the water supply step S4, the mist (MI) of the SPM attached to the wall is washed out by the water supplied to the inner space partitioned between the first guard 53 and the second guard 54. [ When a predetermined period elapses from the start of discharge of water, the water supply step S4 ends.

Subsequently, an organic solvent process (Step S5 in Fig. 5) for supplying IPA as an organic solvent to the upper surface of the substrate W is carried out. The controller 3 closes the intake opening / closing valve 105 and opens the IPA opening / closing valve 106 before the discharge start of the IPA, so that the flow destination of the liquid flowing through the second drainage piping 64 is used for the IPA Is set in the branch piping 103 (see Fig. 7). Other control in the organic solvent step S5 is the same as in the case of the first substrate processing example.

The IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54. [ The IPA flowing down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64. A processing device (not shown) for draining the IPA, . In the organic solvent step S5 in the second substrate processing example, the IPA for the IPA branch pipe 103 is set as the circulation destination of the liquid flowing through the second drain pipe 64, so that the IPA flowing through the second drain pipe 64 And the IPA branch pipe 103, and then sent to a treatment device (not shown) for draining the IPA. When a predetermined period has elapsed from the start of the discharge of IPA, the organic solvent step S5 is terminated. Subsequently, the control device 3 executes the spin-dry process (step S6 in Fig. 5). After the end of the spin drying step S6, the control device 3 stops the rotation of the substrate W by the spin chuck 5 (step S7 in Fig. 5) and stops the rotation of the blocking plate 21 . Thereafter, the substrate W is carried out from the chamber 4 (step S8 in Fig. 5). Each of these steps is the same as the case of the first substrate processing example, and a description thereof will be omitted.

In the second substrate processing example, a cup cleaning step for cleaning the processing cup 12 is performed after the substrate W is taken out. In the cup washing step, water is used as a cleaning liquid.

In the cup cleaning step, the control device 3 starts rotation of the spin base 19 by the spin motor 17 (see Fig. 2A).

The controller 3 controls the guard elevating and lowering unit 55 (see FIG. 2A) to hold the first guard 53 at the lower position P3 before starting the supply of water to the spin base 19, The second guard 54 is raised to the liquid receiver position P2. That is, as shown in Fig. 8C, the state of the processing cup 12 is shifted to the second liquid receiving position. The second guard 54 is opposed to the peripheral edge of the upper surface 19a of the spin base 19 in the second cup receiving position of the processing cup 12. [

7) is opened while the IPA open / close valve 106 (see Fig. 7) is closed before the water supply to the spin base 19 is started , And the flow path of the liquid flowing through the second drainage pipe 64 is set to the receiving branch pipe 102 (see Fig. 7).

When the rotational speed of the spin base 19 reaches a predetermined rotational speed, the control device 3 opens the water valve 47 (see Fig. 2). Thus, as shown in Fig. 8C, water is ejected from the second nozzle 25 (see Fig. 2B) of the central axis nozzle 33. As shown in Fig. The water discharged from the central shaft nozzle 33 is mixed with the central portion of the upper surface 19a of the spin base 19 and is subjected to the centrifugal force by the rotation of the spin base 19 to receive the upper surface 19a of the spin base 19, And flows toward the circumferential edge of the spin base 19 and sideways from the peripheral edge of the spin base 19.

Water splashing from the peripheral edge portion of the spin base 19 is separated from the inner space defined by the inner wall of the inner wall of the second guard 54 or the inner wall of the inner wall of the first guard 53 Outer wall, etc.) and is received by the inner wall of the second guard 54. The water draining along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64 (see Fig. 7). In the cup washing step, since the circulating flow of the liquid flowing through the second liquid feed pipe 64 is set in the receiving branch pipe 102 (see Fig. 7), the water flowing through the second liquid feed pipe 64 flows into the receiving branch pipe 102, and then sent to a treatment device (not shown) for draining the water.

After the substrate W is carried out, the wall of the inner space (the inner wall of the second guard 54 or the outer wall of the first guard 53) partitioned between the first guard 53 and the second guard 54, Although the IPA liquid adheres to the pipe walls of the second drainage groove 62 and the second drainage pipe 64, the IPA liquid is washed out by the execution of the cup cleaning process.

The control device 3 closes the water valve 47 and stops the supply of water to the upper surface 19a of the spin base 19 when a predetermined period elapses from the start of discharge of water. Further, the control device 3 controls the spin motor 17 to stop the spin base 19 from rotating. Thereby, the cup washing step is finished.

In the cup cleaning process of the second substrate processing example, a dummy substrate made of SiC or the like (having the same diameter as the substrate W) is held on the spin chuck 5, and water or the like The water may be scattered from the peripheral edge of the dummy substrate to the side of the dummy substrate.

According to the second substrate processing example, in the second image position state of the processing cup 12, the SPM supply step S3 is executed. Therefore, in the SPM supplying step S3, the second guard 53 is placed as high as possible, and the second chemical agent 53 scattering from the substrate can be satisfactorily received by the second guard 53. [

The mist of the SPM generated in the SPM supplying step S3 is partitioned into a space between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 and the first guard 53) and the like. However, in the water supply step S4 after the end of the SPM supplying step S3, the water scattering from the peripheral edge of the substrate W is divided into the inner space partitioned between the first guard 53 and the second guard 54 The inner wall of the guard 54, the outer wall of the first guard 53, etc.), the SPM attached to the inner wall of the inner space can be washed away. Therefore, it is possible to suppress or prevent the SPM and the IPA from interfering with each other in the processing cup 12. Thereby, it is possible to suppress or prevent the inside of the processing cup 12 from becoming a particle generation source.

In the organic solvent supply step S5, the processing liquid discharged from the substrate W is received in the inner wall of the second guard 54. [ Therefore, after the end of the organic solvent supply step S5, the liquid of IPA is adhered to the wall of the inner space partitioned between the first guard 53 and the second guard 54. However, in order to perform the cup cleaning process after the start of the organic solvent supply step S5, the wall of the inner space partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54, The outer surface of the guard 53) or the IPA liquid attached to the pipe walls of the second drainage groove 62 and the second drainage pipe 64 can be rinsed with water. Therefore, it is possible to suppress or prevent the SPM and the IPA from interfering with each other inside the processing cup 12, thereby preventing or preventing the inside of the processing cup 12 from becoming a particle generation source.

In the second substrate processing example, the water supply step S4 may be performed before the start of the SPM supplying step S3.

As described above, according to this embodiment, in the state where the second guard 54 is disposed at the upper position P1 in the SPM supplying step S3, the high-temperature SPM . The distance between the upper opening 12a of the processing cup 12 and the substrate W is secured in a state in which the second guard 54 is disposed at the upper position P1. In the SPM supplying step S3, the mist of the SPM is generated by the supply of the high-temperature SPM to the substrate W, but the distance between the upper opening 12a of the processing cup 12 and the substrate W is secured The atmosphere containing the mist of the SPM does not flow well out of the processing cup 12 through the upper opening 12a of the processing cup 12. [

Specifically, the upper position P1 of each guard 53, 54 is set so that an annular clearance 86 formed between the upper end of the guard and the opposing member 7 (substrate facing surface 6) 29), and is also a position where the width becomes as narrow as possible. Thereby, the annular gap 86 can be set to a minimum size within a range allowing the passage of the nozzle arm 29. [ In this case, the amount of the atmosphere flowing from the inside of the processing cup 12 to the inside of the chamber 4 can be effectively reduced. This makes it possible to more effectively suppress the diffusion of the atmosphere including the SPM into the surroundings.

In other respects, the upper position P1 of each guard 53, 54 is located below the lower end face 29a of the nozzle arm 29 and above the discharge port 28a. More specifically, the upper position P1 of each guard 53, 54 is set so that the first gap 87 between the upper end of the guard and the lower end face 38a of the nozzle arm 29 is equal to the distance between the nozzle arm 29, And the second gap 88 between the lower end surface 29a of the SPM nozzle 28 and the discharge port 34a of the SPM nozzle 28. [ The upper position P1 of the guards 53 and 54 is set such that the upper end of the guard is positioned on the lower end face 38a of the nozzle arm 29 and the upper face of the substrate W held by the spin chuck 5 (Refer to FIG. 3B).

By setting the image position P1 to such a position, the amount of the atmosphere that flows out from the processing cup 12 into the interior of the chamber 4 can be effectively reduced. This makes it possible to more effectively suppress the diffusion of the atmosphere including the SPM into the surroundings.

Although the embodiment of the present invention has been described above, the present invention may be embodied in another form.

For example, in the first and second substrate processing examples, a cleaning chemical liquid supply step for supplying a cleaning liquid to the upper surface of the substrate W may be performed after the completion of the water supply step S4. In this case, hydrofluoric acid, SC1 (a mixed solution containing NH ₄ OH and H ₂ O ₂ ) may be used as the cleaning solution used in the cleaning solution supply step. When the cleaning chemical solution supply process is executed, a second water supply process for rinsing the chemical solution on the upper surface of the substrate W with the rinsing liquid is performed.

In the first and second substrate processing examples, hydrogen peroxide solution (H ₂ O ₂ ) is supplied to the upper surface (surface) of the substrate W after the execution of the SPM supplying step S 3 or after the cleaning solution supplying step The hydrogen peroxide solution supply step may be performed.

In the above-described embodiment, IPA is exemplified as an example of the organic solvent used as an example of the second chemical liquid. However, examples of the organic solvent include methanol, ethanol, HFE (hydrofluoroether), acetone and the like have. The organic solvent may be not only a single component but also a liquid mixed with other components. For example, it may be a mixture of IPA and acetone, or a mixture of IPA and methanol.

Although the embodiments of the present invention have been described in detail, it should be understood that they are merely examples used to clarify the technical contents of the present invention, and the present invention is not limited to these specific examples. Quot; is limited only by the appended claims.

The present application corresponds to Japanese Patent Application No. 2016-163744 filed with the Japanese Patent Office on Aug. 24, 2016, the entire disclosure of which is hereby incorporated by reference.

1: substrate processing apparatus
4: chamber
5: spin chuck (substrate holding unit)
6: substrate facing surface
7: Opposite member
8: SPM supply unit (first chemical liquid supply unit)
10: organic solvent supply unit (second chemical liquid supply unit)
11: Water supply unit
12: Processing cup
17: Spin motor (rotation unit)
28: SPM nozzle (nozzle)
28a:
29: nozzle arm
29a: bottom surface (bottom of nozzle arm)
55: Guard elevating unit (elevating unit)
75: protruding portion (closed portion)
86: Annular clearance
A3: Shaking axis
P1: Top position
P2: Receiver position
M: Middle position

Claims (20)

A chamber,
A substrate holding unit housed in the chamber and holding the substrate in a horizontal posture,
A rotation unit for rotating the substrate held by the substrate holding unit around a vertical axis of rotation;
A nozzle for ejecting liquid from the ejection opening toward a main surface of the substrate held by the rotation unit,
A first chemical liquid supply unit for supplying a first chemical liquid to the nozzle;
And a plurality of normal guards including a normal first guard surrounding the periphery of the substrate holding unit and a normal second guard surrounding the periphery of the first guard, and,
An elevating unit for elevating and lowering at least one guard among the plurality of guards,
And a control device for controlling the rotation unit, the first chemical solution supply unit, and the elevation unit,
The control device includes:
Wherein at least one guard of the plurality of guards is set at a position higher than a predetermined liquid receiving position capable of receiving a first liquid medicament scattering from a substrate being rotated by the rotation unit as a predetermined image position, An upper position disposing step of disposing a liquid to be scattered from the substrate at an upper position capable of being received by the guard,
And a first chemical liquid supply step for supplying the first chemical liquid to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the guard is disposed at the upper position. The method according to claim 1,
And an opposing member which has a substrate facing surface opposed to the upper surface of the substrate held by the substrate holding unit and which is disposed above the guard and in which the guard is disposed at the upper position, Further comprising an opposing member that forms an annular gap between the upper surface and the upper surface. 3. The method according to claim 1 or 2,
Further comprising a nozzle arm which is pivotably movable about a predetermined swing axis set outside the rotation range of the substrate so as to hold the nozzle and to move the nozzle along the main surface of the substrate held by the substrate holding unit,
Wherein the annular clearance is set to be larger than the vertical width of the nozzle arm so that the nozzle arm can extend over and around the rotation range. 3. The method according to claim 1 or 2,
Further comprising a nozzle arm which is pivotably movable about a predetermined swing axis set on the side of the substrate holding unit so as to hold the nozzle and to move the nozzle along the main surface of the substrate held by the substrate holding unit ,
Wherein the upper value is a position at which a first gap between an upper end of the guard and a lower end of the nozzle arm in a state in which the guard is disposed at a position where the gap is narrower than a second gap between a lower end of the nozzle arm and the discharge port Processing device. 3. The method according to claim 1 or 2,
Wherein the upper value is a position at which the upper end of the guard in a state of being disposed at the upper position is located above an intermediate position between a lower end of the nozzle arm and a main surface of the substrate held by the substrate holding unit, Device. 3. The method according to claim 1 or 2,
Further comprising a second chemical liquid supply unit for supplying a second chemical liquid, which is different from the first chemical liquid, to the main surface of the substrate,
Wherein the control device further controls the second chemical liquid supply unit,
The control device includes:
A step of disposing the first guard at a lower position located at an upper end lower than a substrate held by the substrate holding unit and disposing the second guard at the liquid receiving position,
The second chemical liquid is supplied to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position And further executes a second chemical liquid supply step. The method according to claim 6,
Wherein the controller executes the step of disposing the first and second guards at the upper position as the upper position disposing step. 8. The method of claim 7,
Further comprising a water supply unit for supplying water to the nozzle,
Wherein the control device further controls the water supply unit,
Wherein the control device includes a step of disposing the first and second guards at the liquid receiver position,
Further comprising a water supplying step of supplying water to the main surface of the substrate while rotating the substrate by the rotating unit in a state in which the first and second guards are disposed at the liquid receiving position, . The method according to claim 6,
Wherein the control device executes the step of disposing the first guard at the liquid receiving position and disposing the second guard at the upper position as the image positioning step. 10. The method of claim 9,
Further comprising a water supply unit for supplying water to the nozzle,
Wherein the control device further controls the water supply unit,
The control device includes:
A step of disposing the first guard at a lower position located at an upper end lower than a substrate held by the substrate holding unit and disposing the second guard at the liquid receiving position,
A water supply device for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position, Wherein the substrate processing apparatus further executes the process. 11. The method of claim 10,
Wherein the controller executes the water supply step before and / or after the first chemical liquid supply step and / or before and / or after the second chemical liquid supply step, Device. 3. The method according to claim 1 or 2,
And a partition plate for vertically dividing the lateral region of the substrate holding unit into upper space and lower lower space in the chamber, wherein the lower space is provided with an exhaust port,
A gap is formed between the second guard and the partition plate,
Wherein the second guard has an occluding portion for occluding the gap,
In a state in which the second guard is disposed at the upper position, the blocking portion closes the gap, and in a state in which the second guard is disposed at a predetermined lower position set below the image position, Is formed. 3. The method according to claim 1 or 2,
Wherein the first chemical liquid comprises a mixed liquid of sulfuric acid and hydrogen peroxide water. A rotation unit for rotating the substrate held by the substrate holding unit about a vertical axis of rotation; and a rotation unit for rotating the substrate around the rotation axis, And a plurality of guards including a normal first guard surrounding the first guard and a normal second guard surrounding the periphery of the first guard, the method comprising:
A substrate holding step of holding the substrate by the substrate holding unit;
At least one guard of the plurality of guards is set at a position higher than a predetermined liquid receiving position capable of receiving liquid that flews from the substrate being rotated by the rotation unit as a predetermined image position by the guard, In a position where the liquid can be received by the guard,
And a first chemical liquid supply step of supplying the first chemical liquid to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position. 15. The method of claim 14,
A step of disposing the first guard at a lower position located at an upper end lower than a substrate held by the substrate holding unit and disposing the second guard at the liquid receiving position,
The second chemical liquid is supplied to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position Further comprising a second chemical liquid supply step. 16. The method according to claim 14 or 15,
Wherein the step of arranging the phase position includes the step of disposing the first and second guards at the upper position. 17. The method of claim 16,
Disposing the first and second guards at the liquid receiver positions;
Further comprising a water supplying step of supplying water to the main surface of the substrate while rotating the substrate by the rotating unit in a state in which the first and second guards are disposed at the liquid receiving position, . 16. The method according to claim 14 or 15,
Wherein the image positioning step includes a step of disposing the first guard at the liquid receiving position and disposing the second guard at the image position. 19. The method of claim 18,
Disposing the first and second guards at the liquid receiver positions;
A step of disposing the first guard at a lower position located at an upper end lower than a substrate held by the substrate holding unit and disposing the second guard at the liquid receiving position,
A water supply device for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position, ≪ / RTI > 20. The method of claim 19,
Wherein the water supply step is performed before and / or after the first chemical liquid supply step and / or before and / or after the second chemical liquid supply step.

Images