KR102262348B1 - Substrate processing device and substrate processing method - Google Patents

Abstract

The substrate processing apparatus has a rotation unit for rotating a substrate held in a substrate holding unit accommodated in a chamber about a vertical rotation axis, and a discharge port, toward a main surface of the substrate held by the rotation unit, from the discharge port a nozzle for discharging a liquid, a first chemical solution supply unit for supplying a first chemical solution to the nozzle, a normal first guard surrounding the substrate holding unit, and the first guard surrounding the first guard a processing cup having a plurality of normal guards including a second normal guard and accommodating the substrate holding unit; a lifting unit for raising and lowering at least one of the plurality of guards; the rotation unit; a chemical liquid supply unit and a control device for controlling the lifting unit, wherein the control device scatters at least one guard among the plurality of guards from the substrate being rotated by the rotation unit as a predetermined upper position an upper position arrangement step of setting above a predetermined liquid receiving position capable of receiving the first chemical solution by the guard, and arranging an upper position capable of receiving the liquid scattered from the substrate by the guard; A first chemical solution supply process of supplying a first chemical solution to the main surface of the substrate while rotating the substrate by the rotation unit in the state disposed at the upper position is performed.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD}

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a chemical solution. Examples of the substrate include semiconductor substrates, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, substrates for solar cells, and the like are included.

In the manufacturing process of a semiconductor device liquid crystal display device, in order to process with a chemical|medical solution to the surface of substrates, such as a semiconductor substrate, the single-wafer type substrate processing apparatus which processes a board|substrate one by one may be used. . This single-wafer substrate processing apparatus includes, for example, a spin chuck for rotating a substrate while holding it substantially horizontally in a chamber, a nozzle for supplying a chemical solution to the substrate rotated by the spin chuck, and a process that scatters from the substrate. It includes a processing cup for receiving and draining the liquid, and a disk-shaped blocking plate opposed to the surface (upper surface) of the substrate held by the spin chuck.

The processing cup has, for example, a substantially cylindrical shape with the rotation axis of the substrate by the spin chuck as the central axis, and an opening (upper opening) is formed at the upper end thereof. The processing cup is provided with a fixedly accommodated cup, and a guard that is formed so as to be able to move up and down with respect to the cup, and capable of receiving the chemical liquid scattered from the substrate being rotated by the spin chuck. Usually, in liquid processing of a substrate, at least the height position of the outermost guard is set at a predetermined liquid receiving position capable of receiving the chemical liquid scattered from the substrate by the guard.

In this state, the chemical solution is applied to the surface of the substrate by supplying the chemical solution from the nozzle to the surface of the substrate while rotating the substrate with the spin chuck. The chemical liquid supplied to the surface of the substrate receives a centrifugal force caused by the rotation of the substrate and scatters laterally from the peripheral portion of the substrate. Then, the chemical liquid scattered laterally is received by the guard, is supplied to the cup along the inner wall of the guard, and is then drained.

Japanese Laid-Open Patent Publication No. 9-97757

By the way, although the height position of the liquid receiving position of the guard is a sufficient height to achieve the objective of receiving the chemical liquid scattered from the substrate, in the case of the low height position, even if the inside of the processing cup is exhausted by the exhaust mechanism, the processing cup There is a possibility that the atmosphere containing the chemical mist or the like inside the chamber may flow out of the processing cup through the upper opening of the processing cup and diffuse into the chamber. Since the atmosphere containing the mist of the chemical becomes particles and adheres to the substrate and contaminates the substrate or the inner wall of the chamber, it is necessary to suppress or prevent the diffusion of such an atmosphere to the surroundings. desirable.

Then, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing diffusion to the surroundings of an atmosphere containing a chemical liquid supplied to the main surface of the substrate.

The present invention includes a chamber, a substrate holding unit accommodated in the chamber and holding a substrate in a horizontal position, a rotation unit rotating a substrate held in the substrate holding unit around a vertical rotation axis, and a discharge port. a nozzle for discharging the liquid from the discharge port toward the main surface of the substrate held by the rotation unit; a first chemical solution supply unit for supplying a first chemical solution to the nozzle; a processing cup having a plurality of ordinary guards including a first enclosing normal guard, and a common second guard encircling a periphery of the first guard, the processing cup accommodating the substrate holding unit, one of the plurality of guards; a lifting unit for raising and lowering at least one guard; and a control device for controlling the rotation unit, the first chemical solution supply unit, and the lifting unit, wherein the control device comprises: at least one guard among the plurality of guards; , set above a predetermined liquid receiving position capable of receiving the first chemical liquid scattered from the substrate rotated by the rotation unit by the guard as a predetermined upper value, the liquid flying from the substrate is set above the guard an upper position arranging step of arranging at an upper position that can be received by a first chemical solution; A substrate processing apparatus for performing a supply process is provided.

According to this configuration, in a state in which at least one of the plurality of guards is disposed at an upper position set above the liquid receiving position, the first chemical is supplied to the main surface of the substrate in a rotating state. In a state in which at least one of the plurality of guards is disposed at the upper position, a large distance between the upper opening of the processing cup and the substrate is ensured. In the first chemical solution supply step, chemical mist is generated by supplying the first chemical solution to the substrate, but since the distance between the upper opening of the processing cup and the substrate is secured, an atmosphere containing the chemical mist is created , does not flow well out of the treatment cup past the upper opening of the treatment cup. Thereby, it is possible to provide a substrate processing apparatus capable of suppressing diffusion to the surroundings of the atmosphere containing the first chemical supplied to the main surface of the substrate.

In one embodiment of the present invention, an opposing member having a substrate facing surface facing upward with respect to the upper surface of the substrate held by the substrate holding unit, and disposed above the guard, wherein the guard is positioned at the upper position. It further includes an opposing member which forms an annular gap between the upper end of the guard in the disposed state.

According to this configuration, in order for the atmosphere inside the processing cup to flow out into the chamber, the atmosphere in the processing cup not only flows out of the processing cup through the upper opening, but also includes the upper end of the guard disposed in the upper position and the upper end of the guard. It is necessary to reach the interior of the chamber through the annular gap between the substrate facing surfaces. In this case, by setting the upper value of the guard so that the annular gap becomes narrow, the amount of the atmosphere flowing through the annular gap into the chamber can be effectively suppressed or prevented.

The apparatus holds the nozzle and includes a nozzle arm formed so as to be oscillating around a predetermined oscillation axis set outside the rotation range of the substrate so as to move the nozzle along the main surface of the substrate held by the substrate holding unit. may be included as In this case, the said annular clearance gap may be set larger than the up-and-down width of the said nozzle arm so that the said nozzle arm can span inside and outside the said rotation range.

According to this structure, by setting the annular gap to such a size, the nozzle arm can be made to span the inside and outside of a rotation range, passing through the annular gap. In addition, by making the annular gap as small as possible, the annular gap can also be set to a minimum size within a range allowing passage of the nozzle arm. In this case, the amount of the atmosphere flowing out from the inside of the processing cup to the inside of the chamber can be effectively reduced. Thereby, diffusion to the periphery of the atmosphere containing the first chemical can be more effectively suppressed.

The substrate processing apparatus holds the nozzle and has a nozzle formed so as to be oscillating around a predetermined oscillation axis set on the side of the substrate holding unit so as to move the nozzle along a main surface of the substrate held by the substrate holding unit. An arm may be further included. In this case, the differential value is a position at which the first gap between the upper end of the guard and the lower end of the nozzle arm in a state that is disposed at the upper value becomes narrower than the second gap between the lower end of the nozzle arm and the discharge port. may be

According to this configuration, by setting the magnitude relationship between the first interval and the second interval in this way, it is possible to effectively reduce the amount of the atmosphere flowing out from the processing cup to the inside of the chamber. Thereby, diffusion to the periphery of the atmosphere containing the first chemical can be more effectively suppressed.

The upper end of the guard in the state of being disposed at the upper position may be a position above the intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit.

According to this configuration, by setting the upper value to the position as described above, it is possible to effectively reduce the amount of the atmosphere flowing out from the processing cup to the inside of the chamber. Thereby, diffusion to the periphery of the atmosphere containing the first chemical can be more effectively suppressed.

The apparatus may further include a second chemical liquid supply unit for supplying a second chemical liquid different in kind from the first chemical liquid to the main surface of the substrate. In this case, the control device further controls the second chemical solution supply unit, and the control device sets the first guard to a lower position with an upper end lower than the substrate held by the substrate holding unit. in a state in which the second guard is disposed at the liquid receiving position, the first guard is arranged at the lower tooth, and the second guard is arranged at the liquid receiving position; A second chemical solution supply step of supplying a second chemical solution to the main surface of the substrate while rotating the substrate by a rotation unit may be further performed.

According to this configuration, the second chemical solution supply process is executed in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position. Therefore, in the second chemical liquid supply step, the second chemical liquid scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.

The control device may perform the step of arranging the first and second guards at the upper position as the upper position arranging step.

According to this configuration, the first chemical solution supply process is performed in a state where the first and second guards are disposed at the upper positions. Therefore, in the first chemical solution supply step, while the first guard is placed as high as possible, the first chemical solution scattered from the substrate can be satisfactorily received by the first guard. Thereby, in the first chemical solution supply step, diffusion to the periphery of the atmosphere containing the first chemical solution can be more effectively suppressed.

The apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. The control device includes the steps of: disposing the first and second guards at the liquid receiving positions; and rotating the substrate by the rotating unit in a state where the first and second guards are arranged at the liquid receiving positions. You may further perform the water supply process of supplying water to the main surface of the said board|substrate while rotating.

According to this configuration, the water supply process is executed in a state where the first and second guards are disposed at the liquid receiving positions. Therefore, in the water supply process, water scattered from the substrate can be satisfactorily received by the first guard at the liquid receiving position.

In the water supply process, almost no chemical liquid mist exists around the main surface of the substrate, so even if the first guard is positioned at the liquid receiving position, there is almost no outflow of the chemical liquid mist from the processing cup to the inside of the chamber.

The control device may perform a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position as the upper position arranging step.

According to this configuration, the first chemical solution supply process is executed in a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. By arranging the second guard in the upper position as high as possible, it is possible to suppress the mist of the first chemical from flowing out of the processing cup. Therefore, in the first chemical solution supply process, while receiving the first chemical liquid scattered from the substrate by the first guard at the liquid receiving position, the flow of the atmosphere containing the mist of the first chemical liquid to the outside of the processing cup can be suppressed. have. Thereby, in the first chemical solution supply step, diffusion to the periphery of the atmosphere containing the first chemical solution can be more effectively suppressed.

The apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. the control device arranging the first guard at a lower position whose upper end is lower than the substrate held by the substrate holding unit, and arranging the second guard at the liquid receiving position; Water supply for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position The process may be run further.

According to this configuration, the water supply process is executed in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position. Therefore, in the water supply step, water scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.

In addition, in the first chemical solution supplying step, since the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position, after the first chemical solution supplying step, an interior partitioned between the first and second guards There is a possibility that the mist of the first chemical may adhere to the wall of the space. However, in the water supply process, it is possible to supply the internal space partitioned between the first guard and the second guard. Therefore, even when mist of the first chemical solution adheres to the wall of the internal space partitioned between the first guard and the second guard, the mist of the first chemical solution can be washed away with water by executing the water supply step. .

The control device may perform the water supply process before and/or after the execution of the first chemical liquid supply process and/or before and/or after the execution of the second chemical liquid supply process.

According to this configuration, the first and second chemical liquid supply processes using different types of chemical liquids are performed in a common chamber. In addition, the water supply process is performed before and/or after the execution of the first chemical liquid supply process and/or before and/or after the execution of the second chemical liquid supply process.

After the completion of the first chemical solution supply process and/or before the start of the second chemical solution supply process, the mist of the first chemical solution may adhere to the wall of the internal space partitioned between the first guard and the second guard. In this case, by performing the water supply process after the end of the first chemical solution supply process and/or before the start of the second chemical solution supply process, water can be supplied to the internal space, whereby the first chemical solution adhering to the wall of the internal space of mist can be washed away. Therefore, at the start of the second chemical solution supply process, the mist of the first chemical solution does not remain on the wall of the internal space. Therefore, even if the second chemical solution enters the internal space in the second chemical solution supply step, the second chemical solution does not come into contact with the first chemical solution. Thereby, it is possible to prevent mixing of the first chemical solution and the second chemical solution inside the internal space.

The apparatus may include, in the chamber, a partition plate that vertically divides a lateral region of the substrate holding unit into an upper upper space and a lower lower space. In this case, an exhaust port may be opened in the lower space, and a gap may be formed between the second guard and the partition plate. The second guard may have a closing portion for closing the gap. Further, in a state in which the second guard is disposed at the upper position, the closing portion closes the gap, and the second guard is disposed at a predetermined lower position set below the upper position. A gap may be formed.

According to this configuration, when the gap is opened, the airflow flowing inside the chamber flows both inside the processing cup and the lower space. On the other hand, when the gap is closed, the airflow flowing through the chamber does not flow into the lower space, but collects inside the processing cup.

When the first chemical solution supply process is executed with the second guard in the upper position, an airflow from the inside of the chamber toward the inside of the processing cup may be formed in the first chemical solution supply process. Thereby, the outflow of the atmosphere containing chemical|medical solution mist from a processing cup to the inside of a chamber can be suppressed more effectively.

Moreover, the said 1st chemical|medical solution may contain the mixed solution of sulfuric acid and hydrogen peroxide solution.

The present invention includes: a chamber; a substrate holding unit accommodated in the chamber and holding a substrate in a horizontal position; a rotation unit rotating a substrate held in the substrate holding unit around a vertical rotation axis; A substrate processing method executed in a substrate processing apparatus comprising a plurality of guards including a first normal guard surrounding a perimeter of a holding unit, and a second normal guard surrounding the periphery of the first guard, the substrate processing method comprising: a substrate holding step of holding a substrate by a substrate holding unit, and receiving, by the guard, at least one guard among the plurality of guards, a liquid scattered from the substrate being rotated by the rotating unit as a predetermined upper position an upper position arranging step of arranging an upper position set above a predetermined liquid receiving position as possible and arranged at an upper position capable of receiving liquid scattered from the substrate by the guard; in a state in which the guard is arranged at the upper position; and a first chemical solution supply step of supplying a first chemical solution to the main surface of the substrate while rotating the substrate by the rotation unit.

According to this method, in a state in which at least one of the plurality of guards is disposed at an upper position set above the liquid receiving position, the substrate is rotated and the first chemical is supplied to the main surface of the substrate. In a state in which at least one of the plurality of guards is disposed at the upper position, a large distance between the upper opening of the processing cup and the substrate is ensured. In the first chemical solution supply step, chemical mist is generated by supplying the first chemical solution to the substrate, but since the distance between the upper opening of the processing cup and the substrate is secured, an atmosphere containing the chemical mist is created , it does not flow well out of the treatment cup past the upper opening of the treatment cup. Thereby, it is possible to provide a substrate processing method capable of suppressing diffusion to the periphery of the atmosphere containing the first chemical supplied to the main surface of the substrate.

In one embodiment of the present invention, in the method, the first guard is disposed at a lower position whose upper end is located below the substrate held by the substrate holding unit, and the second guard is placed in the liquid receiver. a main surface of the substrate while rotating the substrate by the rotation unit in a state in which the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position; It further comprises a second chemical solution supply process of supplying a second chemical solution to the

According to this method, the second chemical solution supply process is executed in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position. Therefore, in the second chemical liquid supply step, the second chemical liquid scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.

The upper position arranging step may include a step of arranging the first and second guards at the upper position.

According to this method, the first chemical solution supply process is performed in a state where the first and second guards are disposed at the upper positions. Therefore, in the first chemical solution supply step, while the first guard is placed as high as possible, the first chemical solution scattered from the substrate can be satisfactorily received by the first guard. Thereby, in the first chemical solution supply step, diffusion to the periphery of the atmosphere containing the first chemical solution can be more effectively suppressed.

The method includes: arranging the first and second guards at the liquid receiving positions; and rotating the substrate by the rotating unit in a state where the first and second guards are arranged at the liquid receiving positions. It may further include a water supply step of supplying water to the main surface of the substrate.

According to this method, the water supply process is performed in a state where the first and second guards are disposed at the liquid receiving positions. Therefore, in the water supply process, water scattered from the substrate can be satisfactorily received by the first guard at the liquid receiving position.

In the water supply process, almost no chemical liquid mist exists around the main surface of the substrate, so even if the first guard is positioned at the liquid receiving position, there is almost no outflow of the chemical liquid mist from the processing cup to the inside of the chamber.

The upper position arranging step may include a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position.

According to this method, the first chemical solution supply process is performed in a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. By arranging the second guard in the upper position as high as possible, it is possible to suppress the mist of the first chemical from flowing out of the processing cup. Therefore, in the first chemical solution supply process, while receiving the first chemical liquid scattered from the substrate by the first guard at the liquid receiving position, the flow of the atmosphere containing the mist of the first chemical liquid to the outside of the processing cup can be suppressed. have. Thereby, in the first chemical solution supply step, diffusion to the periphery of the atmosphere containing the first chemical solution can be more effectively suppressed.

The method comprises the steps of: disposing the first and second guards at the liquid receiving positions; and disposing the first guard at a lower position whose upper end is located below the substrate held in the substrate holding unit; , further disposing the second guard at the liquid receiving position; the first guard is arranged at the lower position, and the second guard is arranged at the liquid receiving position. The method may further include a water supply step of supplying water to the main surface of the substrate while rotating the substrate.

According to this method, the water supply process is performed in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position. Therefore, in the water supply step, water scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.

In addition, in the first chemical solution supplying step, since the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position, after the first chemical solution supplying step, an interior partitioned between the first and second guards There is a possibility that the mist of the first chemical may adhere to the wall of the space. However, in the water supply process, it is possible to supply the internal space partitioned between the first guard and the second guard. Therefore, even when mist of the first chemical solution adheres to the wall of the internal space partitioned between the first guard and the second guard, the mist of the first chemical solution can be washed away with water by executing the water supply step. .

The water supply process may be performed before and/or after the execution of the first chemical liquid supply process and/or before and/or after the execution of the second chemical liquid supply process.

According to this method, the first and second chemical liquid supply processes using different types of chemical liquids are performed in a common chamber. In addition, the water supply process is performed before and/or after the execution of the first chemical liquid supply process and/or before and/or after the execution of the second chemical liquid supply process.

After the completion of the first chemical solution supply process and/or before the start of the second chemical solution supply process, the mist of the first chemical solution may adhere to the wall of the internal space partitioned between the first guard and the second guard. In this case, by performing the water supply process after the end of the first chemical solution supply process and/or before the start of the second chemical solution supply process, water can be supplied to the internal space, whereby the first chemical solution adhering to the wall of the internal space of mist can be washed away. Therefore, at the start of the second chemical solution supply process, the mist of the first chemical solution does not remain on the wall of the internal space. Therefore, even if the second chemical solution enters the internal space in the second chemical solution supply step, the second chemical solution does not come into contact with the first chemical solution. Thereby, it is possible to prevent mixing of the first chemical solution and the second chemical solution inside the internal space.

The above-mentioned or still another objective in this invention, the characteristic, and an effect become clear by description of embodiment described next with reference to an accompanying drawing.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic plan view for demonstrating the interior layout of the substrate processing apparatus which concerns on one Embodiment of this invention.
2A is a schematic cross-sectional view for explaining a configuration example of a processing unit included in the substrate processing apparatus.
FIG. 2B is a view for specifically explaining the configuration of the periphery of the opposing member included in the processing unit.
Fig. 3A is a schematic diagram for explaining the flow of an airflow inside the chamber in a state where the second guard shown in Fig. 2A is in the lower position.
Fig. 3B is a schematic view for explaining the flow of airflow inside the chamber when the second guard is in the liquid receiving position.
Fig. 3C is a schematic view for explaining the flow of airflow inside the chamber in a state where the second guard is in the upper position.
4 is a block diagram for explaining the electrical configuration of a main part of the substrate processing apparatus.
5 is a flowchart for explaining a first substrate processing example by the processing unit.
6A to 6B are schematic views for explaining the first example of substrate processing.
6C - 6D are schematic diagrams for explaining the process subsequent to FIG. 6B.
Fig. 6E is a schematic diagram for explaining the process following Fig. 6D.
Fig. 7 is a schematic cross-sectional view showing an enlarged configuration example of a lower portion of the processing unit.
8A - 8B are diagrams for explaining a second example of substrate processing by the processing unit.
8C is a diagram for explaining a second substrate processing example by the processing unit.

1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus which processes board|substrates W, such as a silicon wafer, one by one. In this embodiment, the board|substrate W is a disk-shaped board|substrate. In the substrate processing apparatus 1, a plurality of processing units 2 that process a substrate W with a processing liquid, and a carrier C accommodating a plurality of substrates W processed by the processing unit 2 are mounted. A load port LP to be loaded, transfer robots IR and CR for transferring the substrate W between the load port LP and the processing unit 2 , and a substrate processing apparatus 1 for controlling the substrate processing apparatus 1 . a control device (3). The transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2 . The plurality of processing units 2 have, for example, the same configuration.

2A is a schematic cross-sectional view for explaining a configuration example of the processing unit 2 .

The processing unit 2 includes a box-shaped chamber 4 and a vertical rotation axis A1 passing through the center of the substrate W while maintaining a single substrate W in the chamber 4 in a horizontal position. a spin chuck (substrate holding unit) 5 for rotating the substrate W around it; and a substrate facing surface 6 facing the upper surface (main surface) of the substrate W held by the spin chuck 5; An SPM supply unit (first) for supplying a sulfuric acid/hydrogen peroxide mixture (SPM) as a first chemical to the opposing member 7 and the substrate W held by the spin chuck 5 Chemical liquid supply unit) 8 and on the surface (upper surface) of the substrate W held by the spin chuck 5 isopropyl alcohol as an example of an organic solvent (an organic solvent having a low surface tension) as a second chemical liquid An organic solvent supply unit (second chemical liquid supply unit) 10 for supplying an (isopropyl alcohol: IPA) liquid, and a surface (upper surface) of the substrate W held by the spin chuck 5, as a rinse liquid It includes a water supply unit 11 for supplying water, and a normal processing cup 12 surrounding the spin chuck 5 .

The chamber 4 has a box-shaped partition 13 accommodating the spin chuck 5 or nozzle, and a blowing unit that sends clean air (air filtered by a filter) into the partition 13 from the upper portion of the partition 13 . An FFU (fan filter unit) 14 as a , and a lateral region 15 of the processing cup 12 in the chamber 4 inside the chamber 4 , an upper region 15a and a lower portion and a partition plate 16 dividing it up and down into regions 15b.

The FFU 14 is disposed above the partition wall 13 and is attached to the ceiling of the partition wall 13 . The control device 3 controls the FFU 14 so that the FFU 14 sends clean air downwardly into the chamber 4 from the ceiling of the partition wall 13 .

An exhaust port 9 is opened in the lower portion or the bottom of the partition wall 13 . An exhaust duct 9a is connected to the exhaust port 9 . The exhaust device sucks in the atmosphere of the lower space 4a inside the chamber 4 (the space below the partition plate 16 in the up-down direction among the inner spaces of the chamber 4), 4a) is exhausted.

A downflow (downflow) is formed in the chamber 4 as the exhaust device exhausts the lower space 4a of the chamber 4 while the FFU 14 supplies clean air to the inside of the chamber 4 . The processing of the substrate W is performed in the state in which the down flow is formed in the chamber 4 .

The partition plate 16 is disposed between the outer wall of the processing cup 12 and the partition wall 13 (lateral partition wall) of the chamber 4 . The inner end of the partition plate 16 is disposed along the outer peripheral surface of the outer wall of the processing cup 12 . The outer end of the partition plate 16 is disposed along the inner surface of the partition wall 13 (the partition wall on the side) of the chamber 4 . The SPM nozzle 28 and the nozzle arm 29 described later are disposed above the partition plate 16 . One plate may be sufficient as the partition plate 16, and the multiple plate arrange|positioned at the same height may be sufficient as it. The upper surface of the partition plate 16 may be horizontal, and may extend diagonally toward the rotation axis A1.

As the spin chuck 5, a clamping chuck that holds the substrate W horizontally by sandwiching the substrate W in the horizontal direction is employed. Specifically, the spin chuck 5 includes a spin motor (rotation unit) 17 , a lower spin shaft 18 integrated with a drive shaft of the spin motor 17 , and an upper end of the lower spin shaft 18 . It includes a disk-shaped spin base 19 mounted approximately horizontally. The spin base 19 has an upper surface 19a made of a flat surface.

On the upper surface 19a of the spin base 19, a plurality of (three or more, for example, six) clamping members 20 are arranged at their peripheral portions. The plurality of clamping members 20 are arranged at appropriate intervals on a circumference corresponding to the outer circumferential shape of the substrate W in the upper peripheral edge portion of the spin base 19 .

In addition, as the spin chuck 5, it is not limited to a clamping type thing, For example, by vacuum-sucking the back surface of the board|substrate W, the board|substrate W is hold|maintained in a horizontal attitude|position, and also vertical in that state. A vacuum suction type thing (a vacuum chuck) which rotates the board|substrate W hold|maintained by the spin chuck 5 by rotating around a phosphorus rotation axis may be employ|adopted.

The opposing member 7 includes a blocking plate 21 and an upper spin shaft 22 formed coaxially with the blocking plate 21 . The shield plate 21 is in the shape of a disk having a diameter substantially equal to or larger than that of the substrate W. As shown in FIG. The substrate opposing surface 6 forms the lower surface of the shield plate 21 and is circular in shape facing the entire upper surface of the substrate W.

In the central portion of the substrate facing surface 6, a cylindrical through-hole 23 (refer to FIG. 2B) that penetrates vertically through the blocking plate 21 and the upper spin shaft 22 is formed. The inner peripheral wall of the through hole 23 is partitioned by a cylindrical surface. The first nozzle 24 and the second nozzle 25 respectively extending vertically are inserted into the through hole 23 .

A blocking plate rotating unit 26 is coupled to the upper spin shaft 22 . The blocking plate rotation unit 26 rotates the upper spin shaft 22 around the rotation axis A2 for each blocking plate 21 . A blocking plate lifting unit 27 having a configuration including an electric motor, a ball screw, and the like is coupled to the blocking plate 21 . The blocking plate lifting unit 27 raises and lowers the blocking plate 21 in the vertical direction for each of the first and second nozzles 24 and 25 . The blocking plate raising/lowering unit 27 has a proximal position (see FIG. 6D and the like) in which the substrate-facing surface 6 of the blocking plate 21 is close to the upper surface of the substrate W held by the spin chuck 5; Between the retracted positions (refer FIG. 2A, FIG. 6A, etc.) formed above the adjacent position, the blocking plate 21 and the 1st and 2nd nozzles 24 and 25 are raised and lowered. The blocking plate raising/lowering unit 27 is capable of holding the blocking plate 21 at each position between the proximity position and the retracted position.

The SPM supply unit 8 includes an SPM nozzle (nozzle) 28, a nozzle arm 29 having the SPM nozzle 28 attached to the tip, and an SPM pipe 30 connected to the SPM nozzle 28; A nozzle connected to the SPM valve 31 mounted through the SPM pipe 30 and the nozzle arm 29 and moves the SPM nozzle 28 by swinging the nozzle arm 29 around the swing axis A3. a mobile unit 32 . The nozzle moving unit 32 includes a motor or the like.

The SPM nozzle 28 is, for example, a straight nozzle that discharges a liquid in a continuous flow state. In this embodiment, the discharge port 28a is formed in the outer peripheral surface of the body of the SPM nozzle 28, and SPM is discharged laterally from the discharge port 28a. However, instead of this configuration, a configuration in which a discharge port is formed at the lower end of the body of the SPM nozzle 28 and discharges the SPM downward from the discharge port 28a may be employed.

The SPM pipe 30 is supplied with a sulfuric acid/hydrogen peroxide mixture (SPM) from a sulfuric acid hydrogen peroxide water supply source. In this embodiment, the SPM supplied to the SPM piping 30 is high temperature (for example, about 170 degreeC - about 180 degreeC). SPM heated to the above high temperature by the reaction heat of sulfuric acid and hydrogen peroxide water is supplied to the SPM pipe 30 .

When the SPM valve 31 is opened, the high-temperature SPM supplied from the SPM pipe 30 to the SPM nozzle 28 is discharged from the discharge port 28a of the SPM nozzle 28 . When the SPM valve 31 is closed, the discharge of the high-temperature SPM from the SPM nozzle 28 is stopped. The nozzle moving unit 32 includes a processing position where the high-temperature SPM discharged from the SPM nozzle 28 is supplied to the upper surface of the substrate W, and the SPM nozzle 28 on the side of the spin chuck 5 in plan view. The SPM nozzle 28 is moved between the retracted positions.

FIG. 2B is a diagram for specifically explaining the configuration of the periphery of the opposing member 7 included in the processing unit 2 .

A central axis nozzle 33 extending vertically is inserted into the through hole 23 . The central axis nozzle 33 includes first and second nozzles 24 and 25 and a normal casing 34 surrounding the first and second nozzles 24 and 25 .

A first discharge port 35 for discharging the liquid downward is formed at the lower end of the first nozzle 24 . A second discharge port 36 for discharging the liquid downward is formed at the lower end of the second nozzle 25 . In this embodiment, the 1st and 2nd nozzles 24 and 25 are each an inner tube. The casing 34 extends in the vertical direction along the rotation axis A2. The casing 34 is inserted into the through hole 23 in a non-contact state. Accordingly, the inner periphery of the blocking plate 21 surrounds the outer periphery of the casing 34 at intervals in the radial direction.

The organic solvent supply unit 10 includes a first nozzle 24 , an organic solvent pipe 37 connected to the first nozzle 24 , the inside communicating with the first discharge port 35 , and an organic solvent pipe ( 37) interposed between the first organic solvent valve 38 for opening and closing the organic solvent, and the organic solvent pipe 37 on the downstream side of the first organic solvent valve 38. and a second organic solvent valve 39 that opens and closes.

At the branch position 40 set between the first organic solvent valve 38 and the second organic solvent valve 39 in the organic solvent pipe 37, a suction pipe (not shown) is connected to a tip end thereof. 41) is branched. A suction valve 42 for opening and closing the suction pipe 41 is interposed in the suction pipe 41 .

When the first organic solvent valve 38 is opened, the organic solvent from the organic solvent supply source is supplied to the second organic solvent valve 39 . When the second organic solvent valve 39 is opened in this state, the organic solvent supplied to the second organic solvent valve 39 is discharged from the first discharge port 35 toward the central portion of the upper surface of the substrate W.

In the operating state of the suction device, when the first organic solvent valve 38 is closed and the suction valve 42 is opened while the second organic solvent valve 39 is open, the function of the suction device is activated, The inside of the downstream part 43 (hereinafter referred to as "the organic solvent downstream part 43") downstream from the branch position 40 in the solvent pipe 37 is exhausted, and the organic solvent downstream part is exhausted. The organic solvent contained in (43) is drawn into the suction pipe (41). The suction device and the suction valve 42 are included in the suction unit 44 .

The water supply unit 11 includes a second nozzle 25 , a water pipe 46 connected to the second nozzle 25 , the inside communicating with the second discharge port 36 , and a water pipe 46 . and a water valve 47 that opens and closes and switches the supply and supply stop of water from the water pipe 46 to the second nozzle 25 . When the water valve 47 is opened, water from the water supply source is supplied to the water pipe 46 , and discharged from the second discharge port 36 toward the center of the upper surface of the substrate W . The water supplied to the water pipe 46 is, for example, carbonated water, but is not limited to carbonated water, deionized water (DIW), electrolytic ionized water, hydrogen water, ozone water, and dilution concentration (eg, about 10 ppm to 100 ppm). ) of hydrochloric acid.

The processing unit 2 is further interposed between an inert gas pipe 48 for supplying an inert gas to a normal space between the outer periphery of the casing 34 and the inner periphery of the blocking plate 21 , and the inert gas pipe 48 . and an inert gas valve 49 fitted thereto. When the inert gas valve 49 is opened, the inert gas from the inert gas supply source passes between the outer periphery of the casing 34 and the inner periphery of the shut-off plate 21 , and is discharged downward from the central portion of the lower surface of the shut-off plate 21 . . Accordingly, when the inert gas valve 49 is opened with the shut-off plate 21 disposed at the proximal position, the inert gas discharged from the central portion of the lower surface of the shut-off plate 21 is transferred to the upper surface of the substrate W and the shut-off plate. It spreads outward (in the direction away from the rotation axis A1) between the substrate-facing surfaces 6 of the substrate W, and the air of the substrate W and the blocking plate 21 is replaced with an inert gas. The inert gas flowing through the inert gas pipe 48 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas, and may be other inert gas such as helium gas or argon gas.

As shown in FIG. 2A , the processing cup 12 includes a plurality of cups (first and second cups 51 and 52 ) fixedly arranged so as to double surround the spin chuck 5 , and a substrate W a plurality of guards (first and second guards 53 and 54) for receiving the treatment liquid (SPM, organic solvent, or water) scattered around the unit) (55). The guard raising/lowering unit 55 is a structure containing a ball screw mechanism, for example.

The processing cup 12 can be accommodated so as to overlap in the vertical direction, and when the guard lifting unit 55 raises and lowers at least one of the first and second guards 53 and 54 , the unfolding and folding of the processing cup 12 is reduced. is carried out

The first cup 51 has an annular shape and surrounds the periphery of the spin chuck 5 between the spin chuck 5 and the cylindrical member 50 . The first cup 51 has a shape substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W. The first cup 51 has a U-shaped cross-section, and partitions a first drain groove 59 for draining the processing liquid used for processing the substrate W. A first drain port (not shown) is opened at the lowest point of the bottom of the first drain groove 59 , and a first drain pipe 61 is connected to the first drain hole. The treatment liquid drained through the first drain pipe 61 is sent to a predetermined recovery device or a disposal device, and is treated by the device.

The second cup 52 has an annular shape and surrounds the periphery of the first cup 51 . The second cup 52 has a shape substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W. As shown in FIG. The second cup 52 has a U-shaped cross-section, and partitions a second drain groove 62 for collecting and recovering the processing liquid used for processing the substrate W. A second drain port (not shown) is opened at the lowest point of the bottom of the second drain groove 62 , and a second drain pipe 64 is connected to the second drain port. The treatment liquid drained through the second drain pipe 64 is sent to a predetermined recovery device or a disposal device, and is treated by the device.

The inner first guard 53 surrounds the spin chuck 5 and has a shape substantially rotationally symmetrical with respect to the rotation axis A1 of the substrate W by the spin chuck 5 . The first guard 53 integrally includes a cylindrical guide portion 66 surrounding the spin chuck 5 and a cylindrical treatment liquid separation wall 67 connected to the guide portion 66 . are doing The guide portion 66 has a cylindrical lower end 68 surrounding the periphery of the spin chuck 5, and outwardly from the upper end of the lower end 68 (a direction away from the rotation axis A1 of the substrate W). A normal thickness portion 69 extending, a cylindrical middle portion 70 extending vertically upward from the upper surface outer periphery of the thickness portion 69, and inward from the upper end of the middle portion 70 (of the substrate W) It has an annular upper end 71 extending obliquely upward toward the direction of approaching the rotation axis A1).

The processing liquid separation wall 67 extends vertically downward by a small amount from the outer periphery of the thick portion 69 , and is located on the second drain groove 62 . In addition, the lower end 68 of the guide portion 66 is located on the first drain groove 59, and in a state where the first guard 53 and the first cup 51 are closest to each other, the first drain groove 59 ) is accommodated inside the The inner peripheral end of the upper end 71 of the guide portion 66 has a larger diameter than the substrate W held by the spin chuck 5 in a plan view. Moreover, as shown in FIG. 2A etc., the cross-sectional shape may be linear, and the upper end part 71 of the guide part 66 may extend, drawing a smooth circular arc, for example.

An outer second guard 54 surrounds the periphery of the spin chuck 5 on the outside of the first guard 53 , with respect to the rotation axis A1 of the substrate W by the spin chuck 5 . It has an almost rotationally symmetrical shape. The second guard 54 has a cylindrical portion 72 coaxial with the first guard 53, and the central side from the upper end of the cylindrical portion 72 (direction closer to the rotation axis A1 of the substrate W). It has an upper end part 73 extending obliquely upward, and the cylindrical part 72, for example, in a lower end part. WHEREIN: It has an annular|circular protrusion part (closing part) 75 which protrudes outward. The inner peripheral end of the upper end portion 73 has a larger diameter than the substrate W held by the spin chuck 5 in a planar view. In addition, as shown in FIG. 2A etc., the cross-sectional shape may be linear, and the upper end part 73 may extend, drawing a smooth circular arc, for example. The tip of the upper end 73 partitions the upper opening 12a of the processing cup 12 (refer to FIG. 2A).

The cylindrical portion 72 is located on the second drain groove 62 . In addition, the upper end 73 is formed to overlap the upper end 71 of the guide portion 66 of the first guard 53 in the vertical direction, and the first guard 53 and the second guard 54 are closest to each other. In this state, it is formed so as to be close to the upper end 71 of the guide portion 66 while maintaining a minute gap. The fold back portion 74 is formed so as to overlap the upper end portion 71 of the guide portion 66 in the horizontal direction in a state where the first guard 53 and the second guard 54 are closest to each other. The protrusion part 75 has an annular upper surface which consists of a flat horizontal surface.

The guard raising/lowering unit 55 is between an upper tooth P1 (refer to FIG. 3B etc.) described below and a lower tooth P3 (refer to FIG. 3C etc.) in which the upper end of the guard is located below the substrate W. In , each guard is raised and lowered.

The difference P1 between the first and second guards 53 and 54 is a height position set above the liquid receiving position P2 (refer to FIG. 3A or the like) described below, respectively. The upper end P1 of each guard (first and second guards 53, 54) is an annular gap 86 formed between the upper end of the guard and the opposing member 7 (substrate facing surface 6) ( 6B) is a position at which the size (vertical width) becomes larger than the vertical width W1 of the nozzle arm 29 .

From another viewpoint, the upper position P1 of each guard is lower than the lower end surface 29a of the nozzle arm 29 and higher than the discharge port 28a. More specifically, the upper position P1 of each guard is the first gap 87 between the upper end of the guard and the lower end surface 29a of the nozzle arm 29 (the lower end of the nozzle arm 29) (Fig. 6B). (refer to) is equal to or equal to the second interval (refer to FIGS. 6A and 6B) 88 between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28, or the second It is a position narrower than the gap (88). More specifically, the upper end of each guard P1 is an intermediate between the upper end of the guard 29a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5 . It is a position used above the position M (refer FIG. 3B).

The guard lifting unit 55 is capable of holding the first and second guards 53 and 54 at any position between the upper teeth P1 and the lower teeth P3. Specifically, the guard raising/lowering unit 55 sets the first and second guards 53 and 54 to the upper value P1, the lower value P3, the upper value P1 and the lower value (P1), respectively. It is maintained at the liquid receiving position (P2) set between P3). The liquid receiving position P2 of the first and second guards 53 and 54 is a height position in which the upper end of the guard is located above the substrate W. As shown in FIG. The supply of the processing liquid to the substrate W and drying of the substrate W are performed in a state in which any guards (the first and second guards 53 and 54 ) face the circumferential end surface of the substrate W. .

3A to 3C are schematic views for explaining the height positions of the first and second guards 53 and 54 and the flow of airflow in the chamber 4 . 3A shows a state in which the second guard 54 is disposed at the liquid receiving position P2. 3B shows a state in which the second guard 54 is disposed at the upper position P1. 3C shows a state in which the second guard 54 is disposed on the lower tooth P3.

As a method of making the inner 1st guard 53 oppose the circumferential end surface of the board|substrate W, there exist two methods described below.

The first is a method of arranging both the first and second guards 53 and 54 at the upper position P1, as indicated by a solid line in FIG. 3B. The state of such a processing cup 12 is hereinafter referred to as a "first upper position state". Further, in the first upper position state, the bent portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first and second guards 53 and 54 are provided with a narrow gap. left and overlapped

The second is a method of arranging both the first and second guards 53 and 54 at the liquid receiving position P2, as indicated by the solid line in FIG. 3A. This state of the processing cup 12 is hereinafter referred to as a "first liquid receiving position state". Moreover, in the state of the 1st liquid receiving position, the folding part 74 overlaps with the upper end part 71 of the guide part 66 in the horizontal direction, that is, the 1st and 2nd guards 53 and 54 are a narrow space. is superimposed on

Moreover, as a method of making the outer 2nd guard 54 oppose the circumferential end surface of the board|substrate W, there exist two methods described below.

The first is a method in which the first guard 53 is disposed at the lower tooth P3 and the second guard 54 is disposed at the upper tooth P1 as shown by the dashed-dotted line in FIG. 3B . The state of such a processing cup 12 is hereinafter referred to as a "second upper position state".

The second method is a method in which the first guard 53 is disposed at the lower tooth P3 and the second guard 54 is disposed at the liquid receiving position P2 as shown by the dashed-dotted line in FIG. 3A . This state of the processing cup 12 is hereinafter referred to as a "second liquid receiving position state". In the second liquid receiving position, the distance between the first and second guards 53 and 54 is wide up and down.

In addition, as shown in FIG. 3C , the processing cup 12 may prevent any guards (the first and second guards 53 and 54 ) from opposing the peripheral end face of the substrate W . In this state, both the first and second guards 53 and 54 are disposed on the lower teeth P3. The state of such a processing cup 12 is hereinafter referred to as a "retraction state".

As shown in FIG. 3C , in the retracted state of the processing cup 12 , there is a large gap (up and down direction) between the protrusion 75 (upper surface) of the second guard 54 and the partition plate 16 (lower surface). are about 70 mm apart) (W2) apart. Therefore, when the gas passes between the protrusion 75 and the partition plate 16, there is almost no pressure loss.

On the other hand, in this state, since the upper end of the second guard 54 is located below the circumferential end face of the substrate W, the spin chuck 5 (spin base 19) and the tip of the second guard 54 are The gap between the (retracted portions 74) is narrow, and therefore, when the gas passes through the gap S0 between the spin chuck 5 and the tip of the second guard 54, the pressure loss is large. Therefore, in the retracted state of the processing cup 12, the down flow DF1 flowing inside the chamber 4 only passes between the protrusion 75 and the partition plate 16, and the lower space ( 4a) is entered.

Further, as shown in FIG. 3A , in the first liquid receiving position state or the second liquid receiving position state of the processing cup 12 , the protrusion part 75 (upper surface) of the second guard 54 and the partition plate 16 ) (the lower surface) is narrower than in the case of the retracted state (the distance in the vertical direction is about 30 mm and the distance in the left and right direction is about 2 mm), but are separated. Therefore, the pressure loss through which gas passes through the clearance gap S between the protrusion part 75 and the partition plate 16 becomes larger than the retracted state. In addition, since the upper end of the second guard 54 is located above the circumferential end surface of the substrate W, when the gap S0 between the spin chuck 5 and the tip of the second guard 54 is in the retracted state It is wider and, therefore, the pressure loss when the gas passes between the tip of the spin chuck 5 and the second guard 54 is smaller (ie, exists to some extent) than in the case of the retracted state. Therefore, in the first liquid receiving position state or the second liquid receiving position state of the processing cup 12 , the down flow DF2 flowing through the inside of the chamber 4 is between the protrusion part 75 and the partition plate 16 . It enters the lower space 4a of the chamber 4 through both of the clearance S0 between the spin chuck 5 and the tip of the second guard 54 .

3B, in the first upper position state or the second upper position state of the processing cup 12, the upper surface of the protrusion 75 of the second guard 54 and the lower surface of the partition plate 16 are in contact , thus, the gap S between the protrusion 75 and the partition plate 16 is substantially zero (substantially, it is closed. More precisely, the distance in the vertical direction is about 3 mm, and the gap S in the left and right direction is approximately 3 mm. about 2 mm apart).

On the other hand, in this state, since the upper end of the second guard 54 is located larger than the circumferential end surface of the substrate W, the spin chuck 5 (spin base 19) and the second guard 54 are The gap between the tip ends is very large, and therefore, when the gas passes between the tip of the spin chuck 5 and the second guard 54, the pressure loss hardly occurs. Therefore, the down flow DF3 flowing inside the chamber 4 in the first upper position state or the second upper position state of the processing cup 12 is only the spin chuck 5 and the second guard 54 . It passes between the tips and enters the lower space 4a of the chamber 4 .

4 is a block diagram for explaining the electrical configuration of a main part of the substrate processing apparatus 1 .

The control device 3 is configured using, for example, a microcomputer. The control device 3 has an arithmetic unit such as a CPU, a storage unit such as a fixed memory device, a hard disk drive, and an input/output unit. The storage unit stores a program to be executed by the arithmetic unit.

The control device 3 controls the operations of the spin motor 17 , the nozzle moving unit 32 , the blocking plate rotating unit 26 , the blocking plate lifting/lowering unit 27 , the guard lifting/lowering unit 55 , and the like. In addition, the control device 3 includes the SPM valve 31 , the first organic solvent valve 38 , the second organic solvent valve 39 , the suction valve 42 , the water valve 47 , and the inert gas valve 49 . ) and open the back.

5 is a flowchart for explaining a first substrate processing example by the processing unit 2 . 6A to 6E are schematic views for explaining the first example of substrate processing.

Hereinafter, the first substrate processing example will be described with reference to FIGS. 2A, 2B and 5 . Reference is made to FIGS. 3A-3C and 6A-6E as appropriate. The first substrate processing example is a resist removal processing for removing the resist formed on the upper surface of the substrate W. As described below, in the first substrate processing example, an SPM supply step (first chemical solution supply step) (S3) for supplying SPM to the upper surface of the substrate W, and a liquid organic solvent such as IPA to the substrate ( The organic solvent step (second chemical solution supply step) (S5) of supplying the upper surface of W) is included. The SPM and the organic solvent are a combination of a chemical solution with danger (in this case, a rapid reaction) due to contact.

When the resist removal process is performed on the substrate W by the processing unit 2 , the substrate W after the ion implantation process at high altitude is carried into the chamber 4 (step S1 in FIG. 5 ). . It shall be assumed that the board|substrate W carried in has not received the process for ashing a resist. Moreover, on the surface of the board|substrate W, the fine pattern of high aspect-ratio is formed.

The opposing member 7 (that is, the blocking plate 21 and the central shaft nozzle 33) is retracted to the retracted position, the SPM nozzle 28 is retracted from above the spin chuck 5, and also the first and second 2 In the state where the guards 53 and 54 are lowered to the lower teeth (the upper ends of the first and second guards 53 and 54 are both disposed below the holding position of the substrate W), the control device 3 ) moves the hand H (see FIG. 1 ) of the substrate transfer robot CR (see FIG. 1 ) holding the substrate W into the chamber 4 . As a result, the substrate W is transferred to the spin chuck 5 with its surface (resist formation surface) facing upward. Thereafter, the substrate W is held by the spin chuck 5 .

Thereafter, the control device 3 starts the rotation of the substrate W by the spin motor 17 (step S2 in FIG. 5 ). The substrate W is raised to a predetermined liquid processing speed (within a range of about 10-500 rpm, for example, about 400 rpm), and is maintained at that liquid processing speed.

Next, the control apparatus 3 implements the SPM supply process (step S3 of FIG. 5) which supplies high-temperature SPM to the upper surface of the board|substrate W. In the SPM supply step S3 , in order to peel the resist from the surface of the substrate W, the control device 3 applies high-temperature SPM from the SPM nozzle 28 to, for example, the upper surface central portion of the substrate W. supply

Specifically, the control device 3 moves the SPM nozzle 28 from the retracted position to the processing position by controlling the nozzle moving unit 32 . Thereby, as shown in FIG. 6A, the SPM nozzle 28 is arrange|positioned above the center part of the board|substrate W. As shown in FIG.

After the SPM nozzle 28 is disposed at the processing position (for example, the central position), the control device 3 controls the guard raising/lowering unit 55 to move the first and second guards 53 and 54, respectively. It is raised to the upper position (transitioning the state of the processing cup 12 to the first upper position state), and the first guard 53 is opposed to the circumferential end face of the substrate W.

In the first upper position state of the processing cup 12 , as shown in FIG. 6B , the first gap 87 between the upper end of the second guard 54 and the lower end surface 29a of the nozzle arm 29 (example) For example, approximately zero) is narrower than the second gap 88 (eg, about 5 mm) between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28 . In other words, in the first upper position state of the processing cup 12 , the upper end of the second guard 54 is the lower end surface 29a of the nozzle arm 29 and the substrate W held by the spin chuck 5 . ) is a position located above the intermediate position (M) between the upper surfaces of (see Fig. 3B).

After the first and second guards 53 and 54 are raised, the control device 3 opens the SPM valve 31 . Thereby, SPM of high temperature (for example, about 170 degreeC - about 180 degreeC) is supplied from the SPM pipe 30 to the SPM nozzle 28, and, as shown in FIG. 6B, the discharge port 28a of this SPM nozzle 28 is shown. ), high-temperature SPM is discharged. The high-temperature SPM discharged from the SPM nozzle 28 lands on the central portion of the upper surface of the substrate W, receives centrifugal force due to the rotation of the substrate W, and flows outward along the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is covered with the liquid film of the SPM. By high-temperature SPM, the resist is peeled off from the surface of the board|substrate W, and it is removed from the surface of the said board|substrate W. Moreover, you may make it move (scan) the supply position of the high temperature SPM from the SPM nozzle 28 between the upper surface center part and upper surface peripheral part of the board|substrate W.

SPM supplied to the upper surface of the substrate W scatters from the peripheral portion of the substrate W toward the side of the substrate W, and is received by the inner wall of the first guard 53 . Then, the SPM flowing down along the inner wall of the first guard 53 is collected in the first drain groove 59 and then is guided to the first drain pipe 61, and a drain treatment device (not shown) for draining the SPM. ) is derived from

In SPM supply process S3, since the SPM used is very high temperature (for example, about 170 degreeC - about 180 degreeC), a large amount of mist MI of SPM generate|occur|produces. By supply of the SPM to the substrate W, the SPM mist MI generated in large quantities around the upper surface of the substrate W floats on the upper surface of the substrate W.

In the SPM supply step S3, the height position of the guard (at least the second guard 54) is a sufficient height to achieve the purpose of receiving the chemical liquid scattered from the substrate W, but in the case of a low height position, The atmosphere containing the mist MI of SPM in the inside of the processing cup 12 flows out of the processing cup 12 through the upper opening 12a of the processing cup 12 , and enters the chamber 4 . There is a risk of spreading to The atmosphere containing the mist MI of the SPM becomes particles and adheres to the substrate W to contaminate the substrate W or to contaminate the inner wall of the partition wall 13 of the chamber 4 Therefore, it is not preferable that such an atmosphere diffuses to the surroundings.

In the SPM supply process S3 related to the first substrate processing example, in a state in which the first and second guards 53 and 54 are disposed at upper positions (that is, in the state of the first upper positions of the processing cup 12 ), A high-temperature SPM is supplied to the upper surface of the substrate W in a rotating state. In the first upper position state of the processing cup 12 , the annular formed between the upper end of the second guard 54 in the state disposed in the upper position P1 and the substrate-facing surface 6 of the blocking plate 21 . The gap 86 (see Fig. 3B) is set to be narrow. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow out into the chamber 4 through the annular gap 86 . Thereby, it can suppress or prevent that the atmosphere containing the mist MI of SPM in the inside of the processing cup 12 flows out into the inside of the chamber 4 .

Further, in the first upper position state of the processing cup 12 , since the gap S between the protrusion 75 and the partition plate 16 becomes substantially zero, the downflow DF3 flowing through the inside of the chamber 4 is (See FIG. 3B ) passes between the spin chuck 5 and the tip of the second guard 54 , and enters the lower space 4a of the chamber 4 . Thereby, the outflow of the atmosphere containing the mist MI of SPM from the processing cup 12 to the inside of the chamber 4 can be suppressed more effectively.

In addition, in the first upper position state of the processing cup 12 (the state indicated by a solid line in FIG. 3B ), the first guard 53 and the second guard 54 are closest to each other. In this state, the folding part 74 overlaps with the upper end part 71 of the guide part 66 in the horizontal direction. Therefore, in the SPM supply step S3 , the SPM mist MI floating on the upper surface of the substrate W does not enter between the first guard 53 and the second guard 54 . Before the start of the SPM supply step S3 , IPA may be adhered to the inner wall of the second guard 54 . However, since the mist MI of the SPM does not enter between the first guard 53 and the second guard 54, in the SPM supply step S3, the SPM and the IPA are mixed inside the processing cup 12. can be suppressed or prevented. Thereby, it is possible to suppress or prevent the inside of the processing cup 12 from becoming a particle generation source.

When a predetermined period has elapsed from the start of discharging the high-temperature SPM, the SPM supply step S3 is finished. Specifically, the control device 3 closes the SPM valve 31 to stop the discharge of the high-temperature SPM from the SPM nozzle 28 . In addition, the control device 3 controls the guard raising/lowering unit 55 to lower the first and second guards 53 and 54 to the liquid receiving position P2, respectively. After starting the lowering of the first and second guards 53 and 54 , the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.

Next, a water supply step of supplying water as a rinse liquid to the upper surface of the substrate W (step S4 in FIG. 5 ) is performed. Specifically, the control device 3 opens the water valve 47 . Thereby, as shown in FIG. 6C, water is discharged from the central axis nozzle 33 (2nd nozzle 25 (refer FIG. 2B)) toward the upper surface center part of the board|substrate W. As shown in FIG. The water discharged from the central axis nozzle 33 lands on the central portion of the upper surface of the substrate W, receives centrifugal force due to rotation of the substrate W, and spreads on the upper surface of the substrate W on the periphery of the substrate W. flows towards This water causes the SPM on the substrate W to flow outward, and is discharged to the periphery of the substrate W. As a result, the liquid film of the SPM on the substrate W is replaced with a liquid film of water that covers the entire upper surface of the substrate W. That is, the SPM is washed out from the upper surface of the substrate W by the water as the rinse liquid.

Water flowing through the upper surface of the substrate W scatters from the peripheral portion of the substrate W toward the side of the substrate W, and is received by the inner wall of the first guard 53 . Then, the water flowing down along the inner wall of the first guard 53 is collected in the first drain groove 59 and then is guided to the first drain pipe 61, and a drain treatment device for draining the water (not shown). ) is derived from When the SPM liquid used in the SPM supply step S3 adheres to the inner wall of the first guard 53, the first drain groove 59, or the pipe wall of the first drain pipe 61, the SPM liquid is water washed out by

When a predetermined period of time has elapsed from the start of water discharge, the control device 3 closes the water valve 47 to stop water discharge from the second nozzle 25 . Thereby, the water supply process S4 is complete|finished.

Next, the organic solvent process (step S5 in FIG. 5) of supplying IPA as an organic solvent to the upper surface of the board|substrate W is implemented. Specifically, as shown in FIG. 6D , the control device 3 controls the blocking plate raising/lowering unit 27 to dispose the blocking plate 21 in the proximity position. When the blocking plate 21 is in the proximity position, the blocking plate 21 blocks the upper surface of the substrate W from the space around it.

Further, the control device 3 controls the guard lifting unit 55 to place the first guard 53 at the lower position P3 and the second guard 54 at the upper position P1, The second guard 54 is opposed to the circumferential end face of the substrate W.

Moreover, the control apparatus 3 decelerates the rotation of the board|substrate W to a predetermined|prescribed paddle speed. The paddle speed means that when the substrate W is rotated at the paddle speed, the centrifugal force acting on the liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W, or It refers to the speed at which the centrifugal force and the surface tension are almost antagonistic.

Then, after the rotation speed of the substrate W is lowered to the paddle speed, the control device 3 opens the second organic solvent valve 39 and closes the suction valve 42 while closing the first organic solvent valve 38 ) is opened. Thereby, IPA from the organic solvent supply source is supplied to the 1st nozzle 24, IPA is discharged from the 1st nozzle 24, and it lands on the upper surface of the board|substrate W.

In the organic solvent step S5 , the water contained in the liquid film on the upper surface of the substrate W is sequentially replaced by the IPA by the discharge of the IPA from the first nozzle 24 . Thereby, the liquid film of IPA which covers the whole upper surface of the board|substrate W is hold|maintained in the upper surface of the board|substrate W in the form of a paddle. Even after the liquid film of the entire upper surface of the substrate W is substantially replaced with the liquid film of IPA, the supply of IPA to the upper surface of the substrate W is continued. Therefore, IPA is discharged|emitted from the peripheral part of the board|substrate W.

IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54 . Then, the IPA flowing down along the inner wall of the second guard 54 is collected in the second drain groove 62 and then is guided to the second drain pipe 64, and a treatment device for draining the IPA (not shown) is led to

In this embodiment, the IPA discharged from the peripheral portion of the substrate W is taken in by the inner wall of the second guard 54 opposite to the peripheral end surface of the substrate W, and with respect to the peripheral end surface of the substrate W It is not received by the inner wall of the 1st guard 53 evacuated downward. In addition, in the organic solvent step S5 , the amount of IPA mist generated around the substrate W is small, and the IPA mist is not guided to the inner wall of the first guard 53 . In addition, the SPM adhering to the first guard 53 in the SPM supply step S3 is washed out by the supply of water in the water supply step S4. Therefore, in the organic solvent step S5, the contact between IPA and SPM does not occur.

When a predetermined period elapses from the start of IPA discharge, the control device 3 closes the first organic solvent valve 38 to stop the IPA from being discharged from the second nozzle 25 . Thereby, organic solvent process S5 is complete|finished.

Next, the spin drying process (step S6 of FIG. 5) which dries the board|substrate W is implemented. Specifically, the control device 3 controls the spin motor 17 while the blocking plate 21 is disposed at the proximal position, thereby supplying SPM as shown in Fig. 6E. The substrate W is accelerated to a drying rotation speed (for example, several thousand rpm) larger than the rotation speed in each step from the step S3 to the organic solvent step S5, and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. Moreover, the control device 3 controls the blocking plate rotating unit 26 to rotate the blocking plate 21 in the rotational direction of the substrate W at high speed.

Moreover, in parallel to the spin-drying process S6, the organic-solvent suction process of attracting|sucking the organic solvent in the organic-solvent piping 37 is performed. This organic solvent suction process sucks the organic solvent which exists inside the organic solvent piping 37 after organic solvent process S5 with the suction unit 44. As shown in FIG.

Specifically, the control device 3 opens the suction valve 42 while opening the second organic solvent valve 39 and closing the first organic solvent valve 38 after the organic solvent step S5 is finished. do. Thereby, the inside of the organic solvent downstream part 43 is exhausted, and IPA which exists in the organic solvent downstream part 43 is drawn into the suction pipe 41 (suction). The suction of the IPA is performed until the front end surface of the IPA retreats to a predetermined standby position in the pipe. When the front end face of the IPA is retracted to the standby position, the control device 3 closes the suction valve 42 . Thereby, dripping (drip) of IPA from the organic solvent piping 37 in spin drying process S6 can be prevented.

When a predetermined period elapses from the acceleration of the substrate W, the control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 (step in FIG. 5 ) S7), and also controls the blocking plate rotating unit 26 to stop the rotation of the blocking plate 21 .

Then, the board|substrate W is carried out from the inside of the chamber 4 (step S8 of FIG. 5). Specifically, the control device 3 raises the blocking plate 21 to the retracted position, lowers the second guard 54 to the lower position P3, and the first and second guards 53, 54) is arrange|positioned below the holding position of the board|substrate W. Then, the control device 3 causes the hand H of the substrate transfer robot CR to enter the inside of the chamber 4 . Then, the control device 3 holds the substrate W on the spin chuck 5 in the hand of the substrate transfer robot CR, and moves the hand H of the substrate transfer robot CR from the inside of the chamber 4 . evacuate Thereby, the board|substrate W from which the resist was removed from the surface is carried out from the chamber 4 .

According to this first substrate processing example, the SPM supply step S3 is executed in the first upper position state of the processing cup 12 . Therefore, in the SPM supply step S3 , while the first guard 53 is disposed as high as possible, the first chemical solution scattered from the substrate can be satisfactorily received by the first guard 53 .

In addition, in the SPM supply step S3 and the organic solvent supply step S5, the guards (the first and second guards 53 and 54) receiving the treatment liquid are divided, so that the SPM and the IPA are mixed inside the treatment cup 12 . can be suppressed or prevented. Thereby, it is possible to suppress or prevent the inside of the processing cup 12 from becoming a particle generation source.

7 is a schematic cross-sectional view showing an enlarged example of a configuration example of a lower portion of the processing unit 2 .

A branch pipe 102 for water and a branch pipe 103 for IPA may be connected to the tip of the second drain pipe 64 of the second cup 52 . In other words, the distribution point of the liquid flowing through the second drain pipe 64 (the distribution point of the liquid passing through the internal space partitioned between the first guard 53 and the second guard 54) is provided with two branch pipes (accommodating branch). It is branched into the pipe 102 and the branch pipe 103 for IPA). A case in which such two branch pipes are employed will be described below.

An accommodation opening/closing valve 105 for opening and closing the accommodation branch piping 102 is interposed and attached to the accommodation branch piping 102 . An on-off valve 106 for IPA for opening and closing the branch pipe 103 for IPA is interposed in the branch pipe 103 for IPA, and is attached. When the receiving on/off valve 105 is opened while the on/off valve 106 for IPA is closed, the distribution destination of the liquid flowing through the second drain pipe 64 is set in the receiving branch pipe 102 . When the on-off valve 106 for IPA is opened while the accommodation on-off valve 105 is closed, the distribution destination of the liquid flowing through the second drain pipe 64 is set in the branch pipe 103 for IPA.

8A to 8C are schematic views for explaining the second example of substrate processing. The second substrate processing example is not different from the first substrate processing example in the flow of basic processing. A second substrate processing example will be described with reference to FIGS. 2A, 2B, 5 and 7 . 8A-8C are referred to as appropriate.

The second substrate processing example differs from the first substrate processing example in that the state of the processing cup 12 is arranged not in the first upper position state but in the second upper position state in the SPM supply process S3. The second upper position state of the processing cup 12 is a state in which the first guard 53 is disposed at the liquid receiving position P2 and the second guard 54 is disposed at the upper position. In addition, in the SPM supply step S3 , by placing the processing cup 12 in the second upper position state, the wall of the internal space partitioned between the first guard 53 and the second guard 54 (the second guard 54 ) Although there is a possibility that the mist MI of the SPM may adhere to the inner wall or the outer wall of the first guard 53), the processing cup 12 is placed in the second liquid receiving position in the water supply step S4, and the substrate W ) by supplying water scattered from the periphery of the first guard 53 and the second guard 54 to the inner space partitioned between the first guard 53 and the second guard 54, and thereby the wall of the inner space (the inner wall of the second guard 54 or the first guard It is different from the first substrate processing example in that the mist MI of the SPM adhering to the outer wall of (53), etc.) is washed away with water. Hereinafter, the SPM supply process S3 related to the second substrate processing example will be described in detail.

In the SPM supply step S3 , after the SPM nozzle 28 is disposed at the processing position, the control device 3 controls the guard raising/lowering unit 55 to move the first guard 53 to the liquid receiving position P2 . , the second guard 54 is raised to the upper position P1, and the second guard 54 is opposed to the circumferential end face of the substrate W.

In the second upper position state of the processing cup 12 , similarly to the first upper position state of the processing cup 12 , the gap between the upper end of the second guard 54 and the lower end surface 29a of the nozzle arm 29 is The first spacing 87 (eg approximately zero) is such that the second spacing 88 (eg approximately zero) between the lower end surface 29a of the nozzle arm 29 and the outlet 28a of the SPM nozzle 28 . 5 mm) narrower. In other words, the second upper position state of the processing cup 12 is the substrate W in which the upper end of the second guard 54 is held by the lower end surface 29a of the nozzle arm 29 and the spin chuck 5 . ) is a position located above the intermediate position (M) between the upper surfaces of (see Fig. 3B). After the second guard 54 is raised, the control device 3 opens the SPM valve 31 (see FIG. 2A ).

As shown in FIG. 8A , in the SPM supply step S3 according to this embodiment, the first guard 53 is disposed at the liquid receiving position P2 , and the second guard 54 is disposed at the upper position P1 . In this state (that is, in the second upper position state of the processing cup 12 ), the high-temperature SPM is supplied to the upper surface of the substrate W in the rotating state. The SPM supplied to the upper surface of the substrate W receives a centrifugal force caused by the rotation of the substrate W, and scatters laterally from the peripheral portion of the substrate W. Then, the SPM scattered laterally is received by the first guard 53 at the liquid receiving position P2 and flows down along the inner wall of the first guard 53 . The SPM flowing down the first guard 53 is guided to the first drainage pipe 61 , and is guided to a drainage device (not shown) for draining the SPM.

Moreover, in SPM supply process S3, since the SPM used is very high temperature (for example, about 170 degreeC - about 180 degreeC), a large amount of mist MI of SPM generate|occur|produces. By supply of the SPM to the substrate W, the SPM mist MI generated in large quantities around the upper surface of the substrate W floats on the upper surface of the substrate W.

In the second upper position state of the processing cup 12 , the annular formed between the upper end of the second guard 54 in the state disposed in the upper position P1 and the substrate-facing surface 6 of the blocking plate 21 . The gap 86 (see Fig. 3B) is set to be narrow. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow out into the chamber 4 through the annular gap 86 . Thereby, it can suppress or prevent that the atmosphere containing the mist MI of SPM in the inside of the processing cup 12 flows out into the inside of the chamber 4 .

Further, in the second upper position state of the processing cup 12 , since the gap S between the protrusion 75 and the partition plate 16 becomes substantially zero, the down flow DF3 flowing through the inside of the chamber 4 is (See FIG. 3B ) passes between the spin chuck 5 and the tip of the second guard 54 , and enters the lower space 4a of the chamber 4 . Thereby, the outflow of the atmosphere containing the mist MI of SPM from the processing cup 12 to the inside of the chamber 4 can be suppressed more effectively.

In the SPM supply step S3 of the second substrate processing example, the SPM mist MI enters the internal space partitioned between the first guard 53 and the second guard 54, and as a result, the SPM mist MI ) may adhere to the walls of the internal space (such as the inner wall of the second guard 54 or the outer wall of the first guard 53 ).

After completion of the SPM supply process S3, the control device 3 controls the guard raising/lowering unit 55 to lower the first guard 53 from the liquid receiving position P2 to the lower position P3, The second guard 54 is lowered from the upper position P1 to the liquid receiving position P2. That is, the state of the processing cup 12 is transitioned to the second liquid receiving position state. In the second liquid receiving position of the processing cup 12 , the second guard 54 faces the peripheral end face of the substrate W . In addition, prior to discharging the water, the control device 3 opens the receiving on/off valve 105 while closing the on/off valve 106 for IPA, thereby receiving and branching the distribution destination of the liquid flowing through the second drain pipe 64 . It is set in the piping (102). After starting the lowering of the first guard 53 , the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.

Next, the water supply process (step S4 in FIG. 5) is implemented. Specifically, the control device 3 opens the water valve 47 . Thereby, as shown in FIG. 8B, water is discharged from the (2nd nozzle 25 (refer FIG. 2B) of the central axis nozzle 33 toward the upper surface center part of the board|substrate W. Central axis nozzle 33) Water discharged from the lands on the central portion of the upper surface of the substrate W, receives a centrifugal force caused by the rotation of the substrate W, and flows on the upper surface of the substrate W toward the peripheral edge of the substrate W.

Water supplied to the upper surface of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W, and an internal space partitioned between the first guard 53 and the second guard 54 . It enters (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.) and is received by the inner wall of the second guard 54 . And, the water flowing down along the inner wall of the second guard 54 is guided to the second drain pipe 64 after being collected in the second drain groove 62 . In the water supply step S4 in the second substrate processing example, since the distribution destination of the liquid flowing through the second drain pipe 64 is set in the receiving branch pipe 102 (refer to FIG. 7 ), the second drain pipe 64 The water flowing through is supplied to the receiving branch pipe 102, and then sent to a treatment device (not shown) for draining the water.

After the above-described SPM supply process S3, the wall of the internal space (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.) partitioned between the first guard 53 and the second guard 54 is There is a possibility that the mist MI of the SPM is attached. However, in the water supply step S4 , the mist MI of the SPM adhering to the wall is washed away by the water supplied to the internal space partitioned between the first guard 53 and the second guard 54 . When a predetermined period has elapsed from the start of water discharge, the water supply step S4 ends.

Next, the organic solvent process (step S5 in FIG. 5) of supplying IPA as an organic solvent to the upper surface of the board|substrate W is implemented. Before starting the IPA discharge, the control device 3 opens the on-off valve 106 for IPA while closing the accommodation on-off valve 105, so that the distribution destination of the liquid flowing through the second drain pipe 64 is determined for the IPA. It is set in the branch pipe 103 (refer FIG. 7). Controls other than that in the organic solvent step S5 are the same as in the case of the first substrate processing example.

IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54 . Then, the IPA flowing down along the inner wall of the second guard 54 is collected in the second drain groove 62 and then is guided to the second drain pipe 64, and a treatment device for draining the IPA (not shown) is led to In the organic solvent step S5 in the second substrate processing example, since the distribution destination of the liquid flowing through the second drain pipe 64 is set in the branch pipe 103 for IPA, the IPA flowing through the second drain pipe 64 is , is supplied to the branch pipe 103 for IPA, and is then sent to a processing device (not shown) for draining the IPA. When a predetermined period has elapsed from the start of IPA discharge, the organic solvent step S5 is completed. Next, the control device 3 executes the spin drying step (step S6 in FIG. 5 ). After the spin drying step S6 is completed, the control device 3 stops the rotation of the substrate W by the spin chuck 5 (step S7 in FIG. 5 ), and further stops the rotation of the blocking plate 21 . make it Then, the board|substrate W is carried out from the inside of the chamber 4 (step S8 of FIG. 5). Since each of these steps is equivalent to the case of the first substrate processing example, descriptions thereof are omitted.

In the second substrate processing example, a cup cleaning step of cleaning the processing cup 12 is performed after the substrate W is unloaded. In the cup cleaning step, water is used as the cleaning liquid.

In the cup cleaning step, the control device 3 starts the rotation of the spin base 19 by the spin motor 17 (see FIG. 2A ).

Prior to the start of supply of water to the spin base 19, the control device 3 controls the guard raising/lowering unit 55 (see FIG. 2A) to hold the first guard 53 at the lower tooth P3, The second guard 54 is raised to the liquid receiving position P2. That is, as shown in FIG. 8C, the state of the processing cup 12 is made to transition to the state of the 2nd liquid receiving position. In the second liquid receiving position of the processing cup 12 , the second guard 54 faces the peripheral edge of the upper surface 19a of the spin base 19 .

In addition, prior to the start of supply of water to the spin base 19, the control device 3 closes the on/off valve 106 for IPA (refer to FIG. 7) while opening the receiving on/off valve 105 (refer to FIG. 7). , A distribution destination of the liquid flowing through the second drain pipe 64 is set in the accommodation branch pipe 102 (refer to FIG. 7 ).

When the rotation speed of the spin base 19 reaches a predetermined rotation speed, the control device 3 opens the water valve 47 (see FIG. 2 ). Thereby, as shown in FIG. 8C, water is discharged from the central axis nozzle 33 (2nd nozzle 25 (refer FIG. 2B)). Water discharged from the central shaft nozzle 33 lands on the central portion of the upper surface 19a of the spin base 19, receives centrifugal force due to the rotation of the spin base 19, and the upper surface 19a of the spin base 19 The image flows toward the peripheral edge of the spin base 19 and scatters laterally from the peripheral edge of the spin base 19 .

Water scattered from the periphery of the spin base 19 is absorbed into an internal space partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 or the first guard 53 ). outer wall, etc.), and is received by the inner wall of the second guard 54 . And, the water flowing down along the inner wall of the second guard 54 is guided to the second drain pipe 64 (see FIG. 7 ) after being collected in the second drain groove 62 . In the cup cleaning step, since the distribution destination of the liquid flowing through the second drain pipe 64 is set in the receiving branch pipe 102 (refer to FIG. 7 ), water flowing through the second drain pipe 64 is transferred to the receiving branch pipe ( 102), and then sent to a treatment device (not shown) for draining water.

After the substrate W is taken out, the wall of the internal space partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 or the outer wall of the first guard 53) or the first Although the IPA liquid adheres to the pipe wall of the second drain groove 62 and the second drain pipe 64 , the IPA liquid is washed out with water by executing the cup cleaning step.

When a predetermined period has elapsed from the start of discharging water, the control device 3 closes the water valve 47 to stop the supply of water to the upper surface 19a of the spin base 19 . Further, the control device 3 controls the spin motor 17 to stop the rotation of the spin base 19 . Thereby, the cup cleaning process is complete|finished.

Further, in the cup cleaning step of the second substrate processing example, a dummy substrate made of SiC or the like (having the same diameter as the substrate W) is held by the spin chuck 5, and water or the like is applied to the dummy substrate in a rotating state. By supplying a cleaning liquid of

According to this second example of substrate processing, the SPM supply step S3 is executed in the second upper position state of the processing cup 12 . Therefore, in the SPM supply step S3 , while the second guard 53 is disposed as high as possible, the first chemical liquid scattered from the substrate can be satisfactorily received by the second guard 53 .

In addition, the SPM mist (MI) generated in the SPM supply step S3 is generated by the wall of the internal space partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 or the first guard ( 53), there is a risk of adhering to the outer wall, etc.). However, in the water supply process S4 after the completion of the SPM supply process S3, the water scattered from the peripheral portion of the substrate W is separated between the first guard 53 and the second guard 54. An internal space (the second) By supplying it to the inner wall of the guard 54, the outer wall of the first guard 53, etc.), SPM adhering to the inner wall of the inner space can be washed away. Therefore, it is possible to suppress or prevent SPM and IPA from coming into contact inside the processing cup 12 . Thereby, it is possible to suppress or prevent the inside of the processing cup 12 from becoming a particle generation source.

In addition, in the organic solvent supply step S5 , the processing liquid discharged from the substrate W is received by the inner wall of the second guard 54 . Therefore, after the completion of the organic solvent supply step S5 , the IPA liquid adheres to the wall of the internal space partitioned between the first guard 53 and the second guard 54 . However, in order to perform the cup cleaning process after the start of the organic solvent supply process S5, the wall of the internal space partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 or the first The IPA liquid adhering to the outer wall of the guard 53), the second drain groove 62, and the pipe wall of the second drain pipe 64 can be washed away with water. Therefore, it is possible to suppress or prevent the SPM and IPA from coming into contact inside the processing cup 12 , thereby suppressing or preventing the inside of the processing cup 12 from becoming a particle generation source.

Further, in the second substrate processing example, the water supply step S4 may be performed before the start of the SPM supply step S3.

As described above, according to this embodiment, in the SPM supply step S3, in the state where the second guard 54 is disposed at the upper position P1, the high-temperature SPM is placed on the upper surface of the substrate W in the rotating state. this is supplied In the state where the second guard 54 is disposed on the upper tooth P1 , the distance between the upper opening 12a of the processing cup 12 and the substrate W is ensured to be large. In the SPM supply step S3, SPM mist is generated by supplying the high-temperature SPM to the substrate W, but a large distance between the upper opening 12a of the processing cup 12 and the substrate W is ensured. Therefore, the atmosphere containing the mist of SPM does not easily flow out of the processing cup 12 through the upper opening 12a of the processing cup 12 .

Specifically, the upper teeth P1 of each of the guards 53 and 54 have an annular gap 86 formed between the upper end of the guard and the opposing member 7 (substrate facing surface 6), the nozzle arm ( 29) is larger than the upper and lower width W1, and the position is narrower as much as possible. Thereby, the annular gap 86 can be set to a minimum size within a range allowing passage of the nozzle arm 29 . In this case, the amount of the atmosphere flowing out from the inside of the processing cup 12 to the inside of the chamber 4 can be effectively reduced. Thereby, the diffusion to the circumference|surroundings of the atmosphere containing SPM can be suppressed further more effectively.

Moreover, from another viewpoint, the upper position P1 of each guard 53, 54 is a position below the lower end surface 29a of the nozzle arm 29, and is a position above the discharge port 28a. More specifically, the upper tooth P1 of each of the guards 53 and 54 is the first gap 87 between the upper end of the guard and the lower end surface 38a of the nozzle arm 29, the nozzle arm 29 The position becomes narrower than the second gap 88 between the lower end surface 29a of the SPM nozzle 28 and the discharge port 34a of the SPM nozzle 28 . Further, the upper end P1 of each of the guards 53 and 54 is the upper end of the guard, the lower end surface 38a of the nozzle arm 29, and the upper surface of the substrate W held by the spin chuck 5. It is a position higher than the intermediate position M (refer FIG. 3B) between them.

By setting the upper value P1 to such a position, the amount of the atmosphere flowing out from the processing cup 12 to the inside of the chamber 4 can be effectively reduced. Thereby, the diffusion to the circumference|surroundings of the atmosphere containing SPM can be suppressed further more effectively.

As mentioned above, although one Embodiment of this invention was described, this invention can also be implemented in another form.

For example, in the first and second substrate processing examples, after the water supplying step S4 is finished, a cleaning chemical supplying step of supplying a cleaning chemical to the upper surface of the substrate W may be performed. In this case, hydrofluoric acid, SC1 (a mixed solution containing _{NH 4} OH and H ₂ O ₂ ) may be used as the cleaning chemical used in the cleaning chemical supply process. When the cleaning chemical solution supply step is executed, thereafter, a second water supply step of rinsing the chemical solution on the upper surface of the substrate W with a rinse solution is executed.

Further, in the first and second substrate processing examples, after the SPM supply step S3 or after the cleaning chemical supply step is executed, the hydrogen peroxide solution (H ₂ O ₂ ) is supplied to the upper surface (surface) of the substrate W You may implement the hydrogen peroxide water supply process to do.

In addition, in the above embodiment, IPA was exemplified as an example of the organic solvent used as an example of the second chemical solution, but methanol, ethanol, HFE (hydrofluoroether), acetone, etc. can be exemplified as the organic solvent. have. Moreover, as an organic solvent, not only when it consists only of a single component, but the liquid mixed with other components may be sufficient. For example, the liquid mixture of IPA and acetone may be sufficient, and the liquid mixture of IPA and methanol may be sufficient.

Although embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is limited only by the appended claims.

This application corresponds to Japanese Patent Application No. 2016-163744 filed with the Japan Patent Office on August 24, 2016, and the entire disclosure of this application is taken in by reference here.

1: Substrate processing device
4: chamber
5: Spin chuck (substrate holding unit)
6: substrate facing surface
7: opposing member
8: SPM supply unit (first chemical liquid supply unit)
10: organic solvent supply unit (second chemical liquid supply unit)
11: water supply unit
12: processing cup
17: spin motor (rotation unit)
28: SPM nozzle (nozzle)
28a: outlet
29 : nozzle arm
29a: bottom face (bottom of nozzle arm)
55: guard lifting unit (elevating unit)
75: protrusion (occlusion part)
86: annular gap
A3: Rotation axis
P1 : upper value
P2 : Position of the drip tray
M: middle position

Claims (31)

chamber and
a substrate holding unit accommodated in the chamber and holding the substrate in a horizontal position;
a rotation unit for rotating the substrate held by the substrate holding unit around a vertical rotation axis;
a nozzle having a discharge port and for discharging liquid from the discharge port toward the main surface of the substrate held by the rotation unit;
a first chemical solution supply unit for supplying a first chemical solution to the nozzle;
A processing cup having a plurality of common guards including a first common guard surrounding the periphery of the substrate holding unit, and a common second guard surrounding the periphery of the first guard, the processing cup accommodating the substrate holding unit and,
an elevating unit for elevating at least one guard among the plurality of guards;
an opposing member accommodated in the chamber and having a substrate facing surface facing upward with respect to the upper surface of the substrate held by the substrate holding unit below the ceiling of the partition wall of the chamber and disposed above the guard;
a nozzle arm which holds the nozzle and is oscillated around a predetermined oscillation axis set outside the rotation range of the substrate so as to move the nozzle along the main surface of the substrate held by the substrate holding unit;
a control device for controlling the rotation unit, the first chemical solution supply unit, and the lifting unit;
The control device is
at least one guard among the plurality of guards is set above a predetermined liquid receiving position capable of receiving the first chemical liquid scattered from the substrate being rotated by the rotation unit as a predetermined upper value by the guard; an upper position arrangement step of arranging an upper position capable of receiving liquid scattered from the substrate by the guard;
performing a first chemical solution supplying step of supplying a first chemical solution from the nozzle to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position;
the opposing member forms an annular gap between the guard and an upper end of the guard in a state where the guard is disposed at the upper position;
The said annular clearance gap is set larger than the vertical width of the said nozzle arm so that the said nozzle arm can span inside and outside the said rotation range, The substrate processing apparatus. The method of claim 1,
Further comprising a fan filter unit mounted on the ceiling of the partition wall of the chamber,
The substrate processing apparatus in which the said board|substrate opposing surface of the said opposing member is arrange|positioned below the said fan filter unit. The method of claim 1,
the opposing member includes a blocking plate having a lower surface as the substrate opposing face;
The substrate processing apparatus further includes a blocking plate lifting unit for lifting and lowering the blocking plate. The method of claim 1,
the opposing member includes a blocking plate having a lower surface as a substrate facing surface;
The substrate processing apparatus, wherein the substrate processing apparatus further includes a blocking plate rotating unit for rotating the blocking plate about a vertical rotation axis. The method of claim 1,
The upper value is a position where the first gap between the upper end of the guard and the lower end of the nozzle arm in a state of being disposed at the upper position becomes narrower than the second gap between the lower end of the nozzle arm and the discharge port. processing unit. chamber and
a substrate holding unit accommodated in the chamber and holding the substrate in a horizontal position;
a rotation unit for rotating the substrate held by the substrate holding unit around a vertical rotation axis;
a nozzle having a discharge port and for discharging liquid from the discharge port toward the main surface of the substrate held by the rotation unit;
a first chemical solution supply unit for supplying a first chemical solution to the nozzle;
A processing cup having a plurality of common guards including a first common guard surrounding the periphery of the substrate holding unit, and a common second guard surrounding the periphery of the first guard, the processing cup accommodating the substrate holding unit and,
an elevating unit for elevating at least one guard among the plurality of guards;
a control device for controlling the rotation unit, the first chemical solution supply unit, and the lifting unit;
The control device is
at least one guard among the plurality of guards is set above a predetermined liquid receiving position capable of receiving the first chemical liquid scattered from the substrate rotated by the rotation unit as a predetermined upper value by the guard; an upper position arrangement step of arranging an upper position capable of receiving liquid scattered from the substrate by the guard;
performing a first chemical solution supplying process of supplying a first chemical solution from the nozzle to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position;
The substrate processing apparatus holds the nozzle and has a nozzle formed so as to be oscillating around a predetermined oscillation axis set on the side of the substrate holding unit so as to move the nozzle along a main surface of the substrate held by the substrate holding unit. further comprising an arm;
the upper end of the guard and the lower end of the nozzle arm in a state in which the upper position is disposed at the upper position, the first distance being narrower than the second distance between the lower end of the nozzle arm and the discharge port; processing unit. chamber and
a substrate holding unit accommodated in the chamber and holding the substrate in a horizontal position;
a rotation unit for rotating the substrate held by the substrate holding unit around a vertical rotation axis;
a first chemical solution supply unit for supplying a first chemical solution to the main surface of the substrate held by the substrate holding unit;
A processing cup having a plurality of common guards including a first common guard surrounding the periphery of the substrate holding unit, and a common second guard surrounding the periphery of the first guard, the processing cup accommodating the substrate holding unit and,
an elevating unit for elevating at least one guard among the plurality of guards;
a control device for controlling the rotation unit, the first chemical solution supply unit, and the lifting unit;
The control device is
disposing the first guard at a predetermined liquid receiving position capable of receiving a first chemical liquid scattered from the substrate being rotated by the rotation unit by the first guard;
An upper position in which the second guard is set above the liquid receiving position as a predetermined upper value and is disposed at an upper position capable of receiving an atmosphere containing mist generated around the substrate by the second guard batch process;
In a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position, the first chemical solution supply unit is applied to the main surface of the substrate while rotating the substrate by the rotation unit. A substrate processing apparatus for performing a first chemical solution supply step of supplying a first chemical solution. The method of claim 1,
The upper end of the guard in the state of being disposed at the upper position is higher than an intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit, and the upper end of the nozzle arm is higher than the lower end of the nozzle arm The substrate processing apparatus which is a position located below. The method of claim 1,
In the chamber, further comprising a partition plate dividing the lateral region of the substrate holding unit up and down into an upper upper space and a lower lower space,
An exhaust port is opened in the lower space,
A gap is formed between the second guard and the partition plate,
The second guard has a closing part for closing the gap,
In a state in which the second guard is disposed at the upper position, the closure portion closes the gap, and the second guard is disposed at a predetermined lower position set below the upper position. This is formed, the substrate processing apparatus. 10. The method according to any one of claims 1 to 5, 8 and 9,
Further comprising a second chemical solution supply unit for supplying a second chemical liquid different from the first chemical liquid to the main surface of the substrate,
The control device is to further control the second chemical solution supply unit,
The control device is
disposing the first guard at a lower position with an upper end lower than the substrate held by the substrate holding unit, and disposing the second guard at the liquid receiving position;
Supplying a second chemical solution to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position A substrate processing apparatus further performing a second chemical liquid supply process. 11. The method of claim 10,
and the control device executes the step of arranging the first and second guards at the upper position as the upper position arranging step. 12. The method of claim 11,
Further comprising a water supply unit for supplying water to the main surface of the substrate,
The control device is to further control the water supply unit,
the control device comprising: disposing the first and second guards at the liquid receiving positions;
and a water supply step of supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state in which the first and second guards are disposed at the liquid receiving positions. . 11. The method of claim 10,
and the control device performs the steps of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position as the upper position arranging step. 14. The method of claim 13,
Further comprising a water supply unit for supplying water to the main surface of the substrate,
The control device is to further control the water supply unit,
The control device is
disposing the first guard at a lower position with an upper end lower than the substrate held by the substrate holding unit, and disposing the second guard at the liquid receiving position;
Water supply for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position A substrate processing apparatus for further performing a process. 15. The method of claim 14,
wherein the control device executes the water supply process before and/or after the execution of the first chemical liquid supply process and/or before and/or after the execution of the second chemical liquid supply process. Device. 10. The method according to any one of claims 1 to 5, 8 and 9,
The first chemical solution includes a mixed solution of sulfuric acid and hydrogen peroxide solution, the substrate processing apparatus. a chamber, a substrate holding unit accommodated in the chamber and holding a substrate in a horizontal posture, a rotation unit rotating the substrate held in the substrate holding unit around a vertical rotation axis, and a discharge port; a nozzle for discharging the liquid from the discharge port toward the main surface of the substrate held by the holding unit, and the nozzle is held, and the nozzle is moved along the main surface of the substrate held by the substrate holding unit, the substrate A nozzle arm oscillating around a predetermined oscillation axis set outside the rotation range of a, a normal first guard surrounding the periphery of the substrate holding unit, and a normal second guard surrounding the periphery of the first guard. a plurality of guards including a plurality of guards including a plurality of guards contained in the chamber and a substrate facing surface facing upward with respect to an upper surface of the substrate held by the substrate holding unit below the ceiling of the partition wall of the chamber, and above the guard A substrate processing method performed in a substrate processing apparatus including an opposing member disposed on the
a substrate holding step of holding a substrate by the substrate holding unit;
at least one of the plurality of guards is set above a predetermined liquid receiving position capable of receiving by the guard the liquid scattered from the substrate being rotated by the rotation unit as a predetermined upper position, the substrate; an upper position placing step of arranging an upper position capable of receiving the liquid scattered from the guard by the guard;
a first chemical solution supplying step of supplying a first chemical solution from the nozzle to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position;
the opposing member forms an annular gap between the guard and an upper end of the guard in a state where the guard is disposed at the upper position;
The annular gap is set to be larger than an upper and lower width of the nozzle arm so that the nozzle arm can span inside and outside the rotation range. 18. The method of claim 17,
The substrate processing apparatus further includes a fan filter unit mounted on the ceiling of the partition wall of the chamber,
The substrate processing method in which the said board|substrate opposing surface of the said opposing member is arrange|positioned below the said fan filter unit. 18. The method of claim 17,
the opposing member includes a blocking plate having a lower surface as the substrate opposing face;
The substrate processing method, wherein the substrate processing apparatus further includes a blocking plate lifting unit for lifting and lowering the blocking plate. 18. The method of claim 17,
the opposing member includes a blocking plate having a lower surface as a substrate facing surface;
The substrate processing method, wherein the substrate processing apparatus further includes a blocking plate rotating unit for rotating the blocking plate about a vertical rotation axis. 18. The method of claim 17,
The upper value is a position where the first gap between the upper end of the guard and the lower end of the nozzle arm in a state of being disposed at the upper position becomes narrower than the second gap between the lower end of the nozzle arm and the discharge port. processing method. a chamber, a substrate holding unit accommodated in the chamber and holding a substrate in a horizontal posture, a rotation unit rotating the substrate held in the substrate holding unit around a vertical rotation axis, and a discharge port; a nozzle for discharging the liquid from the discharge port toward the main surface of the substrate held by the holding unit, and the nozzle is held, and the nozzle is moved along the main surface of the substrate held by the substrate holding unit, the substrate A nozzle arm oscillating around a predetermined oscillation axis set outside the rotation range of a, a normal first guard surrounding the periphery of the substrate holding unit, and a normal second guard surrounding the periphery of the first guard. A substrate processing apparatus comprising: a plurality of guards including; an opposing member having a substrate facing surface facing upward with respect to the upper surface of the substrate held by the substrate holding unit, and disposed above the guard A substrate processing method comprising:
a substrate holding step of holding a substrate by the substrate holding unit;
at least one of the plurality of guards is set above a predetermined liquid receiving position capable of receiving by the guard the liquid scattered from the substrate being rotated by the rotation unit as a predetermined upper position, the substrate; an upper position placing step of arranging an upper position capable of receiving the liquid scattered from the guard by the guard;
a first chemical solution supplying step of supplying a first chemical solution from the nozzle to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the guard is disposed at the upper position;
The upper value is a position where the first gap between the upper end of the guard and the lower end of the nozzle arm in a state of being disposed at the upper position becomes narrower than the second gap between the lower end of the nozzle arm and the discharge port. processing method. a chamber; a substrate holding unit accommodated in the chamber and holding a substrate in a horizontal posture; a rotation unit rotating the substrate held in the substrate holding unit around a vertical rotation axis; A method for processing a substrate executed in a substrate processing apparatus comprising: a plurality of guards including a first common guard surrounding a periphery of the first guard, and a plurality of guards including a common second guard surrounding the first guard, the method comprising:
a substrate holding step of holding a substrate by the substrate holding unit;
disposing the first guard at a predetermined liquid receiving position capable of receiving a first chemical liquid scattered from the substrate being rotated by the rotation unit by the first guard;
An upper position in which the second guard is set above the liquid receiving position as a predetermined upper value and is disposed at an upper position capable of receiving an atmosphere containing mist generated around the substrate by the second guard batch process;
In a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position, the first chemical solution supply unit is applied to the main surface of the substrate while rotating the substrate by the rotation unit. A substrate processing method comprising a first chemical solution supplying step of supplying a first chemical solution. 18. The method of claim 17,
The upper end of the guard in the state of being disposed at the upper position is higher than an intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit, and the upper end of the nozzle arm is higher than the lower end of the nozzle arm The substrate processing method which is a position located below. 18. The method of claim 17,
The substrate processing apparatus further includes, in the chamber, a partition plate vertically dividing a lateral region of the substrate holding unit into an upper upper space and a lower lower space,
An exhaust port is opened in the lower space,
A gap is formed between the second guard and the partition plate,
The second guard has a closing part for closing the gap,
In a state in which the second guard is disposed at the upper position, the closure portion closes the gap, and the second guard is disposed at a predetermined lower position set below the upper position. This is formed, the substrate processing method. 26. The method according to any one of claims 17 to 21, 24 and 25,
disposing the first guard at a lower position with an upper end lower than the substrate held by the substrate holding unit, and disposing the second guard at the liquid receiving position;
Supplying a second chemical solution to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position The substrate processing method further comprising a second chemical solution supply process. 26. The method according to any one of claims 17 to 21, 24 and 25,
The upper position arrangement step includes a step of disposing the first and second guards at the upper level position. 28. The method of claim 27,
arranging the first and second guards at the liquid receiving positions;
and a water supply step of supplying water to the main surface of the substrate while rotating the substrate by the rotation unit while the first and second guards are disposed at the liquid receiving positions. . 26. The method according to any one of claims 17 to 21, 24 and 25,
The upper position arrangement step includes a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position. 30. The method of claim 29,
arranging the first and second guards at the liquid receiving positions;
disposing the first guard at a lower position with an upper end lower than the substrate held by the substrate holding unit, and disposing the second guard at the liquid receiving position;
Water supply for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position A method for treating a substrate, further comprising a process. 27. The method of claim 26,
arranging the first and second guards at the liquid receiving positions;
disposing the first guard at a lower position with an upper end lower than the substrate held by the substrate holding unit, and disposing the second guard at the liquid receiving position;
Water supply for supplying water to the main surface of the substrate while rotating the substrate by the rotation unit in a state where the first guard is disposed at the lower tooth and the second guard is disposed at the liquid receiving position further comprising a process,
The upper position arranging step includes a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position,
and the water supply process is performed before and/or after the execution of the first chemical liquid supply process and/or before and/or after the execution of the second chemical liquid supply process.

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