JP2008080288A - Substrate treatment apparatus and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus and a substrate treatment method which can etch off an undesired substance from a rim part of a substrate surface without lowering a throughput. <P>SOLUTION: A substrate W is nearly horizontally supported as it remains separated apart upwards by a determined distance from a spin base 15. Nitrogen gas is supplied into a space SP between the substrate surface Wf and a lower side 501 of a faced member 5 from a plurality of gas discharging openings 502 and a gas supplying passage 57 with the faced member 5 arranged at a facing position upwards the substrate W, so that the substrate W is compressed against a supporting pin F1-F12, S1-S12. A first nozzle 3 is positioned at a supplying position P31 to supply an agent from the first nozzle 3 to a surface peripheral part TR of the rotating substrate W with a second nozzle 4 positioned at a supplying position P41 to supply the agent from the second nozzle 4 to the surface peripheral part TR of the substrate W. As the reagent is supplied to a plurality of positions of the surface peripheral part TR of the substrate W, a time required for etching removal of a thin film is shortened. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention relates to a substrate processing apparatus and method for performing a predetermined process on a substrate by supplying a processing liquid such as a chemical liquid or a rinsing liquid to the substrate.

  In a manufacturing process in which a series of processes are performed on a substrate such as a semiconductor wafer, a film forming process is performed to form various thin films on the surface of the substrate. In this film forming process, a film may be formed on the back surface of the substrate or the peripheral portion of the substrate surface. However, in general, only the circuit formation region at the center of the substrate surface needs to be formed on the substrate. If the film is formed on the back surface of the substrate or the peripheral portion of the substrate surface, the following problems occur. Sometimes. That is, in a subsequent process of the film forming process, the thin film formed on the peripheral portion of the substrate surface may be peeled off by contact with another apparatus. The peeled thin film may adhere to the circuit formation region at the center of the substrate surface or the substrate processing apparatus, which may cause a decrease in the yield of manufactured products and troubles in the substrate processing apparatus itself.

  Therefore, in order to remove the thin film formed on the back surface of the substrate and the peripheral edge of the substrate surface, for example, an apparatus described in Patent Document 1 has been proposed. In this apparatus, a substrate having a thin film formed on the surface is held horizontally with respect to a support portion that protrudes upward from the spin base and supports the substrate while being in contact with the peripheral edge of the lower surface of the substrate. . Then, the substrate is pressed against the support portion by supplying an inert gas to the space formed between the atmosphere blocking plate and the upper surface of the substrate from the atmosphere blocking plate arranged on the upper surface of the substrate toward the upper surface of the substrate. The substrate is rotated while the substrate is held on the spin base. And a nozzle is inserted in the through-hole provided in the peripheral part of the atmosphere interruption | blocking board, and a chemical | medical solution is supplied as a process liquid toward the upper surface peripheral part of the board | substrate rotating from the nozzle. Thereby, unnecessary substances adhering to the peripheral edge of the upper surface of the substrate are removed by etching. Further, a chemical solution is supplied as a processing solution to the back surface of the rotating substrate. As a result, the chemical solution spreads over the entire back surface of the substrate, and unnecessary materials on the back surface of the substrate are removed by etching. In this way, the thin film is removed by etching only at the periphery of the substrate back surface and substrate surface.

JP 2006-41444 A

  In the apparatus having such a configuration, since the inert gas is supplied between the upper surface of the substrate and the atmosphere shielding plate, the temperature of the chemical solution supplied to the peripheral edge of the upper surface of the substrate is lowered by the inert gas. Easily discharged from the substrate surface by the centrifugal force applied to the substrate. Therefore, when the same chemical solution is supplied to the back surface of the substrate and the peripheral edge of the top surface of the substrate, the etching rate of the peripheral edge of the top surface of the substrate is lower than the etching rate of the back surface of the substrate. As a result, it took a long processing time to remove unnecessary materials from the peripheral edge of the upper surface of the substrate.

  Moreover, among the thin films to be removed by etching, there is a kind of thin film that is hardly soluble in a chemical solution. For example, a silicon nitride film (SiN film) and an insulating film (High-k film) having a relative dielectric constant higher than that of a silicon oxide film are hardly soluble in a chemical solution, so that it is difficult to realize a high etching rate. Therefore, in the above apparatus, particularly when etching a thin film of a kind that is hardly soluble in a chemical solution such as a SiN film or a High-k film, a long processing time is required by etching and removing the peripheral portion of the upper surface of the substrate. It was necessary.

  In addition, in the case of a polysilicon film (poly-Si film) and a copper film (Cu film), the etching rate of the portion where the chemical solution is in contact with the other is lower than the etching rate of the portion where the chemical solution is discharged. In particular, when the width of etching removal from the end face of the substrate toward the inside (hereinafter referred to as “peripheral etching width”) is wide, there is a possibility that a part of the thin film remains unetched.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus and method capable of satisfactorily cleaning the peripheral portion of the substrate surface without reducing the throughput.

  According to the first aspect of the present invention, there is provided a rotating member provided to be rotatable about a vertical axis, and a protruding member that protrudes upward from the rotating member, and is in contact with the back surface of the substrate so that the substrate is separated from the rotating member. And at least three support members, and an opposing surface that opposes the upper surface of the substrate supported by the supporting member, and is formed between the opposing surface and the upper surface of the substrate from a gas discharge port provided on the opposing surface. A counter member that presses the substrate against the support member by supplying a gas to the space, and a processing liquid is supplied to the first supply position of the upper surface periphery of the substrate supported by the support member, and the upper surface periphery of the substrate is cleaned The first type of processing liquid is different from the first supply position and is the same type of processing liquid as the processing liquid supplied from the first nozzle to the second supply position on the peripheral edge of the upper surface of the substrate supported by the support member. To clean the periphery of the upper surface of the substrate It is also a substrate processing apparatus, characterized in that it comprises a second nozzle above one, the.

  According to this configuration, the substrate is supported by the support member provided on the rotating member. A counter member is disposed above the substrate supported by the support member, and a space is formed between the counter surface and the upper surface of the substrate from a gas discharge port provided on the counter surface of the counter member facing the upper surface of the substrate. The gas is supplied to the substrate, and the substrate is pressed against the support member. And a process liquid is supplied from a 1st nozzle with respect to the 1st supply position of the upper surface peripheral part of the board | substrate supported by the support member. Further, at least a processing liquid of the same type as the processing liquid supplied from the first nozzle is located at a position different from the first supply position, with respect to the second supply position at the peripheral edge of the upper surface of the substrate supported by the support member. Supplied from one or more second nozzles. As a result, the processing liquid is supplied to a plurality of locations at the peripheral edge of the upper surface of the substrate, thereby cleaning the peripheral edge of the upper surface of the substrate.

  In this way, by supplying the gas to the space formed between the facing surface and the upper surface of the substrate, the upper surface peripheral portion of the substrate is not simply supplied to one place on the upper peripheral surface of the substrate. Even when the cleaning is not performed well, the processing liquid is supplied to a plurality of locations on the peripheral edge of the upper surface of the substrate, so that the cleaning is performed in a short time. Therefore, the peripheral portion of the substrate surface can be cleaned well without reducing the throughput of the apparatus.

  According to a second aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, wherein the radial distance from the peripheral end surface of the substrate at the first and second supply positions is the same.

  According to this configuration, the same type of processing liquid is supplied from the first and second nozzles toward the first and second supply positions having the same radial distance from the peripheral end surface of the substrate. As described above, the processing liquid is supplied to a plurality of locations on the peripheral surface of the upper surface of the substrate, so that the peripheral surface of the upper surface of the substrate can be cleaned in a short time. Therefore, even when cleaning the peripheral edge of the upper surface that requires a long cleaning time, it can be cleaned in a short time.

  A third aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the radial distances from the peripheral end surface of the substrate at the first and second supply positions are different from each other.

  According to this configuration, the same type of processing liquid is supplied from the first and second nozzles toward the first and second supply positions having different radial distances from the peripheral end surface of the substrate. In this way, when the processing liquid is supplied to a position where the radial distance from the peripheral end surface of the substrate is different, the position where the other processing liquid is in contact with the cleaning efficiency at the position where the processing liquid is discharged. Even when the cleaning efficiency is low, the portion to be cleaned in the peripheral portion of the upper surface is satisfactorily cleaned without generating an insufficiently cleaned portion.

  According to a fourth aspect of the present invention, there is provided a rotating member that is rotatably provided around a vertical axis, and is provided to project upward from the rotating member, and abuts against the back surface of the substrate to separate the substrate from the rotating member. At least three support members that are supported by the support member, and an opposing surface that opposes the upper surface of the substrate supported by the support member, and the opposing surface and the upper surface of the substrate from a gas discharge port provided on the opposing surface. And a counter member that presses the substrate against the support member by supplying a gas to a space formed between the substrate and the substrate processing method in the substrate processing apparatus, the peripheral edge of the upper surface of the substrate supported by the support member A first etching step of supplying a processing liquid from the first nozzle toward the first supply position of the substrate, etching unnecessary substances present on the peripheral edge of the upper surface of the substrate, and removing the unnecessary material from the peripheral surface of the upper surface of the substrate; Position different from position And supplying a processing liquid of the same type as the processing liquid supplied from the first nozzle toward the second supply position on the peripheral edge of the upper surface of the substrate supported by the support member from at least one second nozzle, And a second etching step of etching unnecessary substances present at the peripheral edge of the substrate to remove it from the peripheral edge of the top surface of the substrate.

  By this method, the same effect as that of the first aspect of the invention can be realized.

<First Embodiment>
FIG. 1 is a diagram showing a first embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a main control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus is an apparatus for cleaning the peripheral portion of the surface Wf of a substantially circular substrate W such as a semiconductor wafer, specifically, a thin film (unnecessary material) present on the peripheral portion of the surface Wf of the substrate W or the peripheral portion and This is an apparatus for etching away a thin film existing on the substrate back surface Wb. On the substrate W to be processed, a thin film that is hardly soluble in a chemical solution such as a SiN film or a High-k film is formed on the substrate surface Wf or the front and back surfaces Wf and Wb. Therefore, when a thin film is formed only on the substrate surface Wf, a chemical solution and a rinsing solution such as pure water or DIW (hereinafter, chemical solution and rinsing solution are collectively referred to as a peripheral portion TR (treatment region) of the substrate surface Wf. The thin film is removed from the peripheral portion TR by etching, and the processing liquid is supplied to the substrate back surface Wb to clean the back surface Wb. When thin films are formed on the front and back surfaces Wf and Wb of the substrate W, the processing liquid is supplied to the front surface peripheral portion TR and the back surface Wb, and the thin film is etched away from the front surface peripheral portion TR and the back surface Wb. In this embodiment, the substrate surface Wf refers to a device forming surface on which a device pattern is formed.

  The substrate processing apparatus includes a spin chuck 1 that rotates while holding the substrate W in a substantially horizontal position with the substrate surface Wf facing upward, and the center of the lower surface (back surface Wb) of the substrate W held by the spin chuck 1. A lower processing nozzle 2 for supplying a processing liquid toward the substrate, a first nozzle 3 for supplying a chemical to the surface peripheral portion TR of the substrate W held by the spin chuck 1 from the substrate surface side, and a spin chuck from the substrate surface side 2 is provided with a second nozzle 4 for supplying a chemical solution to the surface peripheral portion TR of the substrate W held by 1, and a counter member 5 disposed to face the surface Wf of the substrate W held by the spin chuck 1.

  The spin chuck 1 has a hollow rotating support shaft 11 connected to a rotating shaft of a chuck rotating mechanism 13 including a motor, and can be rotated around a rotation center A 0 by driving the chuck rotating mechanism 13. A spin base 15 is integrally connected to the upper end portion of the rotating spindle 11 by a fastening part such as a screw. Therefore, the spin base 15 rotates around the rotation center A0 by driving the chuck rotation mechanism 13 in accordance with an operation command from the control unit 8 that controls the entire apparatus. Thus, in this embodiment, the spin base 15 functions as the “rotating member” of the present invention.

  A processing liquid supply pipe 21 is inserted into the hollow rotating spindle 11, and the lower surface processing nozzle 2 is coupled to the upper end of the processing liquid supply pipe 21. The processing liquid supply pipe 21 is connected to the chemical liquid supply unit 16 and the DIW supply unit 17, and DIW is selectively supplied as the chemical liquid or the rinse liquid. Further, a gap between the inner wall surface of the rotation spindle 11 and the outer wall surface of the processing liquid supply pipe 21 forms an annular gas supply path 23. The gas supply path 23 is connected to the gas supply unit 18 and can supply nitrogen gas into a space sandwiched between the substrate back surface Wb and the top surface of the spin base 15 facing the substrate back surface Wb. In this embodiment, nitrogen gas is supplied from the gas supply unit 18, but air or other inert gas may be discharged.

  FIG. 3 is a plan view of the spin base 15 as viewed from above. An opening is provided at the center of the spin base 15. Further, a plurality (12 in this embodiment) of first support pins F1 to F12 and a plurality (12 in this embodiment) of second support pins S1 to S12 are provided near the periphery of the spin base 15. The “supporting member” of the present invention is provided so as to be vertically movable. The first support pins F1 to F12 project radially upward from the spin base 15 at substantially equal angular intervals around the rotation center A0, and the second support pins S1 to S12 extend in the circumferential direction. Projecting upward from the spin base 15 at substantially equal angular intervals radially about the rotation center A0 so as to be positioned between the first support pins F1 to F12. That is, a pair of support pins including the first and second support pins are provided in the circumferential direction so as to have 12 pairs radially about the rotation center A0 and upward on the peripheral edge of the spin base 15.

  Each of the first support pins F1 to F12 and the second support pins S1 to S12 can support the substrate W in a substantially horizontal posture in a state where the first support pins F1 to F12 and the second support pins S1 to S12 are spaced apart from the spin base 15 by a predetermined distance. It has become. Among these, twelve first support pins F1 to F12 arranged every other along the circumferential direction constitute a first support pin group, and these support the substrate W in conjunction with each other, or the back surface of the substrate. It operates so as to release the support away from Wb. On the other hand, the remaining 12 second support pins S1 to S12 constitute a second support pin group that supports the substrate W in conjunction with each other or releases the support away from the substrate back surface Wb. Operate. In order to horizontally support the substrate W, each support pin group may have at least three support pins, but each support pin group should have 12 support pins. Thus, the substrate W can be stably supported.

  FIG. 4 is a partially enlarged view showing the structure of the support pin. Since each of the support pins F1 to F12 and S1 to S12 has the same configuration, only the configuration of one support pin F1 will be described here with reference to the drawings. The support pin F1 includes an abutting portion 61 that can be separated from and abutted on the lower surface of the substrate W, a movable rod 62 that supports the abutting portion 61 so as to be movable up and down, and a lift drive unit that includes a motor that moves the movable rod 62 up and down. 63 and a bellows 64 provided so as to surround the movable rod 62 and blocking the movable rod 62 and the lifting drive unit 63 from the external atmosphere. The bellows 64 is formed of PTFE (polytetrafluoroethylene), for example, and protects the movable rod 62 formed of stainless steel (SUS) or aluminum when the substrate W is processed with a chemical solution or the like. The contact portion 61 is preferably formed of PCTFE (polychlorotrifluoroethylene) in consideration of chemical resistance. The upper end portion of the bellows 64 is fixed to the lower surface side of the contact portion 61, while the lower end portion of the bellows 64 is fixed to the upper surface side of the spin base 15.

  In the support pins F1 to F12 and S1 to S12 having the above-described configuration, the elevating drive unit 63 moves the movable rod 62 with a stroke of 1 to several mm via a drive connecting unit (not shown) based on a drive signal from the control unit 8. By driving, the substrate W is supported as follows. That is, in a state where the elevating drive unit 63 is not driven, each of the support pins F1 to F12 and S1 to S12 is provided with a biasing means such as a coil spring so as to support the substrate W at a predetermined height position (substrate processing position). The substrate W is biased upward by a support pin group including both a first support pin group including support pins F1 to F12 and a second support pin group including support pins S1 to S12. Supported. On the other hand, when the support pins S1 to S12 are driven downward against the urging force, the contact portions 61 of the support pins S1 to S12 are separated from the substrate back surface Wb, and the substrate W is the first formed of the support pins F1 to F12. It is supported only by the support pin group. When the support pins F1 to F12 are driven downward against the urging force, the contact portions 61 of the support pins F1 to F12 are separated from the substrate back surface Wb, and the substrate W is the second support composed of the support pins S1 to S12. Supported only by pins.

  Returning to FIG. 1, the description will be continued. Above the spin chuck 1, a disk-shaped facing member 5 that faces the substrate W supported by the support pins F <b> 1 to F <b> 12 and S <b> 1 to S <b> 12 is horizontally disposed. The facing member 5 is attached to a lower end portion of a rotation support shaft 51 arranged coaxially with the rotation support shaft 11 of the spin chuck 1 so as to be integrally rotatable. A counter member rotation mechanism 53 is connected to the rotation support shaft 51, and the counter member 5 is driven around the rotation center A0 by driving the motor of the counter member rotation mechanism 53 in accordance with an operation command from the control unit 8. Rotate. The control unit 8 controls the counter member rotating mechanism 53 to synchronize with the chuck rotating mechanism 13, thereby rotating the counter member 5 with the same rotation direction and the same rotation speed as the spin chuck 1.

  Further, the facing member 5 is connected to the facing member lifting mechanism 55 and operates the lifting drive actuator (for example, an air cylinder) of the facing member lifting mechanism 55 to make the facing member 5 face the spin base 15 in the vicinity. Or can be separated. Specifically, the control unit 8 drives the counter member lifting mechanism 55 so that when the substrate W is loaded into or unloaded from the substrate processing apparatus, the control unit 8 faces a separated position sufficiently away from the spin chuck 1. The member 5 is raised. On the other hand, when a predetermined process such as an etching process is performed on the substrate W, the facing member 5 is lowered to a facing position set very close to the surface Wf of the substrate W held by the spin chuck 1. . As a result, the lower surface 501 of the opposing member 5 (corresponding to the opposing surface of the present invention) and the substrate surface Wf are arranged to face each other.

  The central opening of the facing member 5 and the hollow portion of the rotation support shaft 51 form a gas supply path 57. The gas supply path 57 is connected to the gas supply unit 18 and can supply nitrogen gas to a space SP sandwiched between the substrate surface Wf and the lower surface 501 of the opposing member 5.

  FIG. 5 is a bottom view of the facing member 5. The plane size of the lower surface 501 of the facing member 5 is formed to be equal to or larger than the diameter of the substrate W. For this reason, when the facing member 5 is disposed at the facing position, the entire surface of the substrate is covered and the atmosphere on the substrate surface Wf can be blocked from the external atmosphere. In addition, nozzle insertion holes 5A and 5B having a substantially cylindrical inner space penetrating the opposing member 5 in the vertical direction (vertical axis direction) are formed in the peripheral portion of the opposing member 5. The nozzles 3 and 4 can be inserted individually. The nozzle insertion hole 5A and the nozzle insertion hole 5B are formed in the same shape at symmetrical positions with respect to the rotation center A0. On the other hand, the first nozzle 3 and the second nozzle 4 have the same nozzle outer diameter. For this reason, both the nozzles 3 and 4 can be inserted into any of the nozzle insertion holes 5A and 5B.

  A plurality of gas discharge ports 502 are formed on the lower surface 501 of the facing member 5. The plurality of gas discharge ports 502 are circumferentially centered on the rotation center A0 at a position facing the central portion of the surface of the substrate W held by the spin chuck 1, that is, the non-process region NTR radially inward of the surface peripheral portion TR. Are formed at equiangular intervals. These gas discharge ports 502 communicate with a gas circulation space 503 (FIG. 1) formed inside the facing member 5, and when nitrogen gas is supplied to the gas circulation space 503, a plurality of gas discharge ports 502 are connected. Through this, nitrogen gas is supplied to the space SP.

  When nitrogen gas is supplied to the space SP from the plurality of gas discharge ports 502 and the gas supply path 57 in a state where the opposing member 5 is positioned at the opposing position, the internal pressure of the space SP is increased and the substrate W is The support pins F1 to F12 and S1 to S12 that are in contact with the back surface Wb are pressed. Accordingly, when the spin base 15 rotates according to the operation command of the control unit 8, the substrate W is supported by the support pins F1 to F12, F1 and F12 by the frictional force generated between the substrate back surface Wb and the support pins F1 to F12 and S1 to S12. It rotates with the spin base 15 while being supported by S1 to S12. Note that the nitrogen gas supplied to the space SP flows outward in the radial direction of the substrate W.

  Returning to FIG. 1, the description will be continued. The first nozzle 3 is connected to the chemical solution supply unit 16 and the DIW supply unit 17, and from the chemical solution supply unit 16 or the DIW supply unit 17 in accordance with an operation command from the control unit 8 (the “treatment liquid” of the present invention). DIW is selectively supplied to the first nozzle 3 as a rinsing liquid (corresponding to “processing liquid” of the present invention). As the chemical solution, a chemical solution suitable for etching a thin film (unnecessary material), for example, hydrofluoric acid, hydrochloric acid / hydrogen peroxide (hydrochloric acid + hydrogen peroxide solution), or the like is used. In this embodiment, a relatively high concentration chemical solution is prepared in order to remove the thin film that is hardly soluble in the chemical solution from the substrate W by etching. For example, when hydrofluoric acid is used as the chemical solution, a stock solution of hydrofluoric acid or a relatively high concentration hydrofluoric acid aqueous solution is prepared.

  The first nozzle 3 is attached to one end of a nozzle arm 31 extending in the horizontal direction. The other end of the nozzle arm 31 is connected to the first nozzle moving mechanism 33. The first nozzle moving mechanism 33 can swing the first nozzle 3 in the horizontal direction around a predetermined rotation axis and raise and lower the first nozzle 3. For this reason, the first nozzle moving mechanism 33 is driven in accordance with an operation command from the control unit 8, whereby the first nozzle 3 is inserted into the nozzle insertion hole 5 </ b> A (or 5 </ b> B) of the facing member 5 and the surface peripheral portion It can be moved to a supply position P31 (corresponding to the “first supply position” of the present invention) at which chemical liquid or DIW can be supplied to TR and a standby position P32 away from the substrate W.

  The second nozzle 4 is also connected to the chemical solution supply unit 16 and the DIW supply unit 17, and from the chemical solution supply unit 16 or the DIW supply unit 17 in accordance with an operation command from the control unit 8 (the “treatment solution” of the present invention). ) Or a rinse liquid (corresponding to the “treatment liquid” of the present invention) is selectively supplied to the second nozzle 4. The second nozzle 4 supplies the same kind of chemical solution as that supplied from the first nozzle 3 to the surface peripheral portion TR. For example, when hydrofluoric acid is supplied from the first nozzle 3 to the surface peripheral portion TR as a chemical solution, hydrofluoric acid having the same concentration is also supplied from the second nozzle 4 to the surface peripheral portion TR. That is, by supplying the same kind of chemical solution from the first nozzle 3 and the second nozzle 4, the thin film is removed from the substrate W by etching without reducing the throughput of the thin film that is hardly soluble in the chemical solution. Is possible. The liquid used for the rinsing liquid may be carbonated water, hydrogen water, dilute concentration (for example, about 1 ppm) ammonia water, dilute hydrochloric acid, or the like in addition to DIW.

  The second nozzle moving mechanism 43 that drives the second nozzle 4 has the same configuration as the first nozzle moving mechanism 33. That is, the second nozzle moving mechanism 43 can swing the second nozzle 4 attached to the tip of the nozzle arm 41 in the horizontal direction around a predetermined rotation axis and raise and lower the second nozzle 4. For this reason, the second nozzle moving mechanism 43 is driven in accordance with an operation command from the control unit 8, whereby the second nozzle 4 is inserted into the nozzle insertion hole 5 </ b> B (or 5 </ b> A) of the facing member 5 and the surface peripheral edge portion It can be moved to a supply position P41 (corresponding to the “second supply position” of the present invention) at which chemical liquid or DIW can be supplied to TR and a standby position P42 away from the substrate W.

  Here, the nozzle insertion hole 5A and the nozzle insertion hole 5B are formed at symmetrical positions with respect to the rotation center A0, and extend in a plan view from the rotation center A0 to the supply position P31 and from the rotation center A0 to the supply position P41. The angle formed by the direction is 180 °.

  With the above configuration, the control unit 8 drives the first and second nozzle moving mechanisms 33 and 43 while controlling the chemical solution supply unit 16 and the DIW supply unit 17, so that the first nozzle 3 positioned at the supply position P31 The chemical solution is supplied to the surface peripheral portion TR of the substrate W by positioning the second nozzle 4 at the supply position P41 while supplying the chemical solution to the surface peripheral portion TR of the rotating substrate W.

  Next, the configuration of the nozzle insertion holes 5A and 5B provided in the first and second nozzles 3 and 4 and the facing member 5 will be described. Both nozzles 3 and 4 are configured identically. Both nozzle insertion holes 5A and 5B have the same shape as the opposing member 5, and are formed symmetrically with respect to the rotation center A0. Therefore, only the configuration of the first nozzle 3 and the nozzle insertion hole 5A will be described with reference to FIG.

  FIG. 6 is a diagram illustrating the configuration of the nozzle insertion hole 5 </ b> A provided in the first nozzle 3 and the facing member 5. The first nozzle 3 is formed in a substantially cylindrical shape in accordance with the shape of the nozzle insertion hole 5A provided in the facing member 5, and is inserted into the nozzle insertion hole 5A so that the front end side of the first nozzle 3 is the surface peripheral portion TR. It arranges facing (FIG. 1). A liquid supply path 301 is formed inside the first nozzle 3, and the tip (lower end) of the liquid supply path 301 constitutes the discharge port 301 a of the first nozzle 3. The nozzle outer diameter of the first nozzle 3 is, for example, about φ5 to 6 mm so as not to increase the diameter of the nozzle insertion hole 5A more than necessary. The 1st nozzle 3 is comprised so that the cross-sectional area of the nozzle trunk | drum formed in the substantially cylindrical shape may differ on the nozzle front end side and a rear end side. Specifically, the cross-sectional area of the body 302 on the nozzle front end side is configured to be smaller than the cross-sectional area of the body 303 on the nozzle rear end side, and the body 302 on the nozzle front end side and the nozzle rear end side on the nozzle rear end side are configured. A step surface 304 is formed between the body portion 303 and the body portion 303. That is, the outer peripheral surface (side surface) of the body 302 on the nozzle front end side and the outer peripheral surface (side surface) of the body 303 on the rear end side of the nozzle are connected via the step surface 304. The step surface 304 is formed so as to surround the body portion 302 on the nozzle tip side and substantially parallel to the substrate surface Wf held by the spin chuck 1.

  An annular contact surface 504 that can contact the step surface 304 of the first nozzle 3 is formed on the inner wall of the nozzle insertion hole 5A. When the first nozzle 3 is inserted into the nozzle insertion hole 5A, the step surface 304 and the contact surface 504 come into contact with each other, whereby the first nozzle 3 is positioned at the supply position P31. In a state where the first nozzle 3 is positioned at the supply position P <b> 31, the front end surface around the discharge port 301 a of the first nozzle 3 is flush with the facing surface 501 of the facing member 5. The contact surface 504 is formed substantially parallel to the facing surface 501 of the facing member 5, that is, substantially parallel to the substrate surface Wf, and is in surface contact with the step surface 304 of the first nozzle 3. For this reason, when positioning the 1st nozzle 3 in supply position P31, the 1st nozzle 3 contact | abuts to the opposing member 5, the position is fixed, and the 1st nozzle 3 can be positioned stably.

  The discharge port 301a of the first nozzle 3 opens toward the outside in the radial direction of the substrate W, and the chemical solution or DIW can be discharged from the discharge port 301a to the surface peripheral portion TR. The liquid supply path 301 is connected to the chemical liquid supply unit 16 and the DIW supply unit 17 at the rear end of the nozzle, and can selectively discharge the chemical liquid or DIW. For this reason, when the chemical liquid is pumped from the chemical liquid supply unit 16 to the liquid supply path 301, the chemical liquid is discharged from the first nozzle 3 toward the outside in the radial direction of the substrate W. Thereby, the chemical solution supplied to the surface peripheral portion TR flows toward the outside in the radial direction of the substrate W and is discharged out of the substrate. Therefore, the chemical solution is not supplied to the non-process region NTR radially inward from the supply position of the chemical solution, and the thin film is etched away with a constant width (peripheral etching width) from the end surface of the substrate W to the inside. When DIW is pumped from the DIW supply unit 17 to the liquid supply path 301, DIW is discharged from the first nozzle 3 toward the outside in the radial direction of the substrate W. Thereby, the chemical | medical solution supplied to the surface peripheral part TR is washed away with DIW. The discharge port of the second nozzle 4 is also opened outward in the radial direction of the substrate W in the same manner as the first nozzle 3, and the chemical solution or DIW can be discharged from the discharge port to the surface peripheral portion TR. ing.

  FIG. 7 is a cross-sectional view for explaining the relationship between the outer diameters of the first and second nozzles 3 and 4 and the hole diameters of the nozzle insertion holes 5A and 5B. The hole diameters of the nozzle insertion holes 5A and 5B are formed larger than the outer diameters of the first and second nozzles 3 and 4. For this reason, the first and second nozzles 3 and 4 can be positioned at different positions in the horizontal direction in the internal space of the nozzle insertion holes 5A and 5B. The diameters of the nozzle insertion holes 5A and 5B are preferably larger than the outer diameters of the first and second nozzles 3 and 4 by about 1 to 2 mm. In this case, the supply position P31 and the supply position P41 can be set so that the radial distance from the peripheral end surface of the substrate W is different by about 0.2 to 0.5 mm. In this embodiment, the supply position P31 of the first nozzle 3 and the supply position P41 of the second nozzle 4 are set such that the radial distance from the peripheral end surface of the substrate W is the same.

  A gas introduction port 505 is opened on the inner walls of the nozzle insertion holes 5A and 5B of the opposing member 5, and nitrogen gas can be supplied from the gas introduction port 505 to the internal spaces of the nozzle insertion holes 5A and 5B. Yes. The gas inlet 505 communicates with the gas supply unit 18 through a gas circulation space 503 formed inside the facing member 5. Therefore, when nitrogen gas is pumped from the gas supply unit 18, the nitrogen gas is supplied to the internal spaces of the nozzle insertion holes 5A and 5B. Thus, in a state where the first and second nozzles 3 and 4 are positioned at the standby positions P32 and P42, that is, in a state where the first and second nozzles 3 and 4 are not inserted into the nozzle insertion holes 5A and 5B, the nozzles Nitrogen gas is ejected from both the upper and lower openings of the insertion holes 5A and 5B. For this reason, even when the nozzle is not inserted into the nozzle insertion holes 5A and 5B, the treatment liquid is prevented from adhering to the inner walls of the nozzle insertion holes 5A and 5B.

  Next, the operation of the substrate processing apparatus configured as described above will be described with reference to FIGS. FIG. 8 is a flowchart showing the operation of the substrate processing apparatus of FIG. FIG. 9 is a plan view for explaining the etching removal action of the thin film by the chemical solution.

  In this apparatus, when an unprocessed substrate W is carried into the apparatus, the control unit 8 controls each part of the apparatus to perform a series of film removal processes on the substrate W (chemical treatment process + rinsing process + drying process). Is executed. Here, a thin film TF (FIG. 7) is formed on the substrate surface Wf. That is, the substrate surface Wf is a thin film forming surface. Therefore, in this embodiment, the substrate W is carried into the apparatus with the substrate surface Wf facing upward. Note that the facing member 5 is in a separated position, and prevents interference with the substrate W.

  When the unprocessed substrate W is placed on the support pins F1 to F12 and S1 to S12, nitrogen gas is discharged from the gas discharge port 502 of the facing member 5 at the separated position, and nitrogen gas is discharged from the gas supply path 57. Discharge (step 1). Next, the opposing member 5 is rotated, and the opposing member 5 is positioned with respect to the rotation direction so that the nozzle insertion holes 5A and 5B are at predetermined positions (step 2). Thereafter, the facing member 5 is lowered to the facing position and is disposed close to the substrate surface Wf (step S3). As a result, the internal pressure of the space SP sandwiched between the lower surface 501 of the opposing member 5 and the substrate surface Wf is increased, and the substrate W is pressed against the support pins F1 to F12 and S1 to S12 that are in contact with the lower surface (back surface Wb). And held on the spin base 15. Further, the substrate surface Wf is covered with the lower surface 501 of the facing member 5 and is reliably shielded from the external atmosphere around the substrate. As described above, the substrate W may be supported by all the support pins F1 to F12 and S1 to S12, or may be supported only by the first support pin group including the support pins F1 to F12, or may be supported. You may support only by the 2nd support pin group which consists of pins S1-S12.

  Next, the substrate W is rotated with the facing member 5 stopped (step S4). At this time, the substrate W pressed by the support pins F1 to F12 and S1 to S12 is held by the spin base 15 by the frictional force generated between the support pins F1 to F12 and S1 to S12 and the substrate back surface Wb. 15 and rotate. Subsequently, the first nozzle 3 is positioned from the standby position P32 to the supply position P31 (step S5). Specifically, the first nozzle 3 is moved to a position above the nozzle insertion hole 5A of the facing member 5 along the horizontal direction. Then, the first nozzle 3 is lowered and inserted into the nozzle insertion hole 5A. At the same time when the first nozzle 3 is positioned at the supply position P31, the second nozzle 4 is also positioned from the standby position P42 to the supply position P41 (step S5).

  When the rotation speed of the substrate W reaches a predetermined speed (for example, 600 rpm), the chemical solution is continuously supplied from the first nozzle 3 and the second nozzle 4 to the surface peripheral portion TR of the rotating substrate W. As a result, the thin film is etched and removed from the surface peripheral portion TR and the substrate end surface portion connected to the surface peripheral portion TR over the entire circumference (step S6; first and second etching steps).

  As shown in FIG. 9, when the chemical solution is supplied from the first nozzle 3 to the minute region SR, the etching process for the minute region SR is started. Then, the thin film is etched away from the minute region SR over time by the chemical solution attached to the minute region SR. However, the temperature of the chemical solution adhering to the minute region SR is lowered by the nitrogen gas supplied from the gas discharge port 502 and the gas supply path 57. Further, since a part of the chemical solution adhering to the minute region SR is gradually shaken off by the centrifugal force applied to the substrate W, the etching rate of the thin film in the minute region SR is gradually lowered. However, since the chemical solution is supplied again from the second nozzle 4 to the minute region SR by rotating the substrate W in the rotation direction R, a decrease in the etching rate of the thin film in the minute region SR is suppressed. Further, when the substrate W rotates and makes one round, a new chemical solution is supplied from the first nozzle 3 to the minute region SR.

  As described above, in the present embodiment, since the chemical liquid is repeatedly supplied to the microregion SR by the first nozzle 3 and the second nozzle 4 as shown in FIG. 9, the etching is performed without reducing the etching rate of the microregion SR. Processing is executed. Further, in the present embodiment, since the first nozzle and the second nozzle 4 are arranged at symmetrical positions with respect to the rotation center A0, the supply of the chemical liquid to the minute region SR is periodically performed at regular intervals. Therefore, it is possible to efficiently suppress a decrease in the etching rate. Thus, when the chemical solution processing for a predetermined time is completed, the supply of the chemical solution is stopped. Next, DIW is supplied from the first nozzle 3 and the second nozzle 4, and a rinsing process is performed on the surface peripheral portion TR and the end surface of the substrate W (step S7). When DIW is supplied from the first nozzle 3 and the second nozzle 4 for a predetermined time and the rinse process is completed, the supply of DIW is stopped. Although the rinsing process may be executed by supplying DIW from either one of the first nozzle 3 or the second nozzle 4, the time required for the rinsing process is shortened by supplying DIW from both nozzles. Is done.

  After the rinsing process is completed, the first nozzle 3 is positioned from the supply position P31 to the standby position P32 (step S8). Similarly, the second nozzle 4 is also positioned from the supply position P41 to the standby position P42 (step S8).

  Subsequently, the facing member 5 is rotated in the same direction at substantially the same rotational speed as that of the spin base 15 (step S9). Thereafter, the processing liquid is supplied from the lower surface processing nozzle 2 to the back surface Wb of the rotating substrate W, and the back surface cleaning process is performed on the substrate back surface Wb (step S10). Specifically, the chemical liquid and the rinse liquid are sequentially supplied from the lower surface processing nozzle 2 toward the center of the substrate back surface Wb, whereby the entire back surface and the substrate end surface portion connected to the back surface Wb are cleaned. Thus, by rotating the counter member 5 together with the substrate W, it is possible to prevent the processing liquid adhering to the counter member 5 from adversely affecting the process. Further, it is possible to suppress the generation of an excessive air flow accompanying the rotation between the substrate W and the opposing member 5 and prevent the mist-like processing liquid from being caught on the substrate surface Wf.

  Here, during the cleaning process, the support pins F1 to F12 and S1 to S12 are separated from the substrate back surface Wb at least once to process the contact portions of the support pins F1 to F12 and S1 to S12 and the substrate back surface Wb. The part can be cleaned by wrapping in the liquid. For example, during the cleaning process, the first support from the state where the substrate W is supported by both the first support pin group including the support pins F1 to F12 and the second support pin group including the support pins S1 to S12. The state is switched to a state in which the substrate W is supported only by the pin group, and the processing liquid is introduced into the contact portion between the substrate W and the second support pin group. Then, after shifting to a state in which the substrate W is supported by both the support pin groups, the substrate W is switched to a state in which the substrate W is supported only by the second support pin group, and the contact between the substrate W and the first support pin group is changed. Allow the processing solution to wrap around the part. As a result, the entire back surface can be cleaned by causing the processing liquid to wrap around all the contact portions between the substrate W and the support pins F1 to F12 and S1 to S12.

  Thus, when the back surface cleaning process is completed, the substrate W and the opposing member 5 are rotated at a high speed (for example, 1500 rpm). Thereby, drying of the substrate W is executed (step S11). At this time, the nitrogen gas is supplied from the gas supply path 23 together with the supply of the nitrogen gas to the substrate surface Wf, and the nitrogen gas is supplied to the front and back surfaces of the substrate W, thereby promoting the drying process of the substrate W.

  When the drying process of the substrate W is completed, the rotation of the opposing member 5 is stopped and simultaneously the rotation of the substrate W is stopped (step S12). Then, after the facing member 5 is raised (step 13), the supply of nitrogen gas from the gas supply path 57 and the gas discharge port 502 is stopped (step S14). Thereby, the pressing and holding of the substrate W to the support pins F1 to F12 and S1 to S12 is released, and the processed substrate W is carried out of the apparatus.

  As described above, according to this embodiment, the chemical solution is supplied to a plurality of locations on the surface peripheral portion TR of the substrate W. For this reason, even in the case of etching a thin film that is hardly soluble in a chemical solution and difficult to achieve a high etching rate, it can be removed by etching in a short time.

  Further, according to this embodiment, when the first and second nozzles 3 and 4 are positioned at the supply positions P31 and P41, the first and second nozzles 3 and 4 are connected to the nozzle insertion hole 5A of the facing member 5. , 5B. For this reason, the processing liquid is blocked by the lower surface 501 of the opposing member 5 even when the processing liquid scatters and bounces back toward the nozzles (first and second nozzles 3 and 4) during the etching process. Thereby, a large amount of processing liquid does not adhere to the nozzle. Therefore, it is possible to prevent the processing liquid from dropping from the nozzle and adhering to the substrate W or the substrate peripheral member when the nozzle is moved.

  In this embodiment, a holding member such as a chuck pin that holds the substrate W in contact with the outer peripheral end of the substrate W is not provided. Therefore, the processing liquid shaken off radially outward from the rotating substrate W does not hit the holding member and rebound to the substrate surface Wf. In addition, the holding member may be a factor that disturbs the airflow in the vicinity of the outer peripheral edge of the substrate W. However, since this factor does not exist, the mist-like processing liquid is less likely to be caught on the substrate surface Wf side. Further, in this embodiment, the nitrogen gas supplied from the gas supply path 57 and the gas discharge port 502 to the space SP sandwiched between the substrate surface Wf and the lower surface of the opposing member 5 leads to the non-process region NTR at the center of the surface. The entry of chemicals is prevented. Therefore, it is possible to uniformly remove unwanted materials from the surface peripheral portion TR over the entire periphery with a constant peripheral etching width EH.

  In the above embodiment, the substrate processing apparatus is equipped with the first nozzle 3 and the second nozzle 4, but the number of nozzles is not limited to two. By providing two or more second nozzles 4, three or more nozzles may be equipped together with the first nozzle 3, and the chemical solution is supplied to three or more locations on the surface peripheral portion TR of the substrate W. It is good. In this case, the processing liquid supply positions of the nozzles may be provided at substantially equal angular intervals with the rotation center A0 as the center. According to this configuration, since the chemical solution is supplied to the minute region SR in the surface peripheral portion TR of the substrate W at every predetermined time by each nozzle, it is possible to efficiently suppress the decrease in the etching rate.

<Second Embodiment>
FIG. 10 is a view showing a second embodiment of the substrate processing apparatus according to the present invention, and FIG. 11 is a sectional view for explaining the positioning of the first and second nozzles 3 and 4 with respect to the nozzle insertion holes 5A and 5B. is there. The substrate processing apparatus according to the second embodiment is greatly different from the first embodiment in the following points. That is, in the first embodiment, the supply position P31 of the first nozzle 3 and the supply position P41 of the second nozzle 4 are set so that the radial distance from the peripheral end surface of the substrate W is the same. On the other hand, in the second embodiment, the radial distance from the peripheral end surface of the substrate W at the supply position P31 of the first nozzle 3 and the supply position P41 of the second nozzle 4 is set to be different from each other. That is, the first and second nozzles 3 and 4 are positioned at different positions in the horizontal direction in the internal space of the nozzle insertion holes 5A and 5B. In this embodiment, the supply position P41 of the second nozzle 4 is set on the radially inner side of the substrate W with respect to the supply position P31 of the first nozzle 3, and the supply position P41 is 0. It is set so as to be positioned on the inner side in the radial direction of the substrate W by about 2 to 0.5 mm. Compared to the etching rate of the portion where the chemical solution is discharged, such as a polysilicon film (poly-Si film), a copper film (Cu film), etc., on the substrate W to be processed in the second embodiment, A thin film is formed so that the etching rate of the other parts in contact with the chemical is lowered. Other configurations and operations are basically the same as those in the first embodiment.

  In the second embodiment, when the chemical solution is supplied from the first nozzle 3 and the second nozzle 4 to the surface peripheral portion TR, the radial distance between the peripheral end surface of the substrate W and the discharge position of the chemical solution is the first. The chemical liquid discharged from the nozzle 3 is different from the chemical liquid discharged from the second nozzle 4. That is, as shown in FIG. 11, the discharge position of the chemical solution supplied from the first nozzle 3 is outside the radial direction of the substrate W than the discharge position of the chemical solution supplied from the second nozzle 4. As a result, the peripheral edge etching width EH of the substrate W is the distance in the radial direction of the substrate W between the peripheral end surface of the substrate W and the supply position P41 of the second nozzle 4, but from the supply position P41 of the second nozzle 4 Also, the chemical solution is supplied from the first nozzle 3 to the outside in the radial direction of the substrate W. Therefore, a thin film that is difficult to be etched by the chemical supplied from the second nozzle 4 in the peripheral etching width EH, that is, a thin film on the outer side in the radial direction of the substrate W from the vicinity of the supply position P41 is a chemical supplied from the first nozzle 3. Etched by As described above, even when the etching rate of the thin film at the position where the other chemical solution contacts is lower than the etching rate of the thin film in the vicinity of the position where the chemical solution is discharged, the thin film has one edge at the peripheral etching width EH. Etching is satisfactorily removed without leaving any part.

  In the above embodiment, the substrate processing apparatus is equipped with the first nozzle 3 and the second nozzle 4, but the number of nozzles is not limited to two. By providing two or more second nozzles 4, three or more nozzles may be equipped together with the first nozzle 3, and the chemical solution is supplied to three or more locations on the surface peripheral portion TR of the substrate W. It is good. Further, in this case, the distance in the radial direction of the substrate W between the peripheral end surface of the substrate W and the supply position of the chemical solution of each nozzle may be set to be different.

<Others>
The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention.

  In the above embodiment, the angle formed by the direction extending from the rotation center A0 to the supply position P31 of the first nozzle 3 and the direction extending from the rotation center A0 to the supply position P41 of the second nozzle 4 in plan view is 180 °. However, the angle is not limited to this, and may be set to an angle other than 180 ° such as 90 ° or 120 °.

  In the above embodiment, the first and second nozzles 3 and 4 are positioned in the nozzle insertion holes 5 </ b> A and 5 </ b> B formed in the facing member 5 when the first and second nozzles 3 and 4 are positioned at the supply position where the chemical liquid can be supplied to the surface peripheral portion TR. Although the first and second nozzles 3 and 4 are inserted, it is not always necessary to insert the first and second nozzles 3 and 4 into the nozzle insertion holes 5A and 5B. For example, a counter member having a plane size smaller than the plane size of the substrate W may be disposed opposite to the substrate surface Wf, and the first and second nozzles 3 and 4 may be disposed close to the side wall of the counter member.

  Also, with respect to the nozzle insertion holes of the opposing member 5, in the above-described embodiment, two nozzle insertion holes are formed in the opposing member 5 corresponding to the first and second nozzles 3, 4. A nozzle insertion hole may be formed. For example, three or more nozzle insertion holes may be formed at different positions in the radial direction between the peripheral end surface of the substrate W and the chemical solution supply position. According to this configuration, the peripheral etching width can be changed by appropriately inserting the first and second nozzles 3 and 4 into any of the three or more nozzle insertion holes and performing processing.

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention can be applied to a substrate processing apparatus and a substrate processing method for performing a bevel etching process on the surface of various substrates including a substrate.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows 1st Embodiment of the substrate processing apparatus concerning this invention. It is a block diagram which shows the main control structures of the substrate processing apparatus of FIG. It is the top view which looked at the spin base from the upper part. It is the elements on larger scale which show the structure of a support pin. It is a bottom view of an opposing member. It is a figure which shows the structure of the nozzle insertion hole provided in the 1st nozzle and the opposing member. It is sectional drawing for demonstrating the relationship between the outer diameter of a 1st and 2nd nozzle, and the hole diameter of a nozzle insertion hole. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a top view for demonstrating the etching removal effect | action of the thin film by a chemical | medical solution. It is a figure which shows 2nd Embodiment of the substrate processing apparatus concerning this invention. It is sectional drawing for demonstrating the relationship between the outer diameter of a 1st and 2nd nozzle, and the hole diameter of a nozzle insertion hole.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Spin chuck 3 ... 1st nozzle 4 ... 2nd nozzle 5 ... Opposing member 5A, 5B ... Nozzle insertion hole 15 ... Spin base 18 ... Gas supply unit 33 ... 1st nozzle moving mechanism 43 ... 2nd nozzle moving mechanism 501 ... Lower surface of facing member 502 ... Gas outlet A0 ... Rotation center of substrate (F1-F12) Support pin P31 ... Supply position P41 ... Supply position R ... Rotation direction of (substrate) S1-S12 ... Support pin SP ... (Substrate facing) Space between the surface and the substrate surface) TR ... front surface peripheral edge W ... substrate Wb ... substrate back surface Wf ... substrate surface

Claims (4)

A rotating member provided rotatably around a vertical axis;
At least three supporting members that protrude upward from the rotating member, abut against the back surface of the substrate, and support the substrate apart from the rotating member;
It has a facing surface facing the upper surface of the substrate supported by the support member, and supplies a gas from a gas discharge port provided on the facing surface to a space formed between the facing surface and the upper surface of the substrate. An opposing member for pressing the substrate against the support member,
A first nozzle that supplies a processing liquid to a first supply position at a peripheral edge of the upper surface of the substrate supported by the support member, and cleans the peripheral edge of the upper surface of the substrate;
A processing liquid of the same type as the processing liquid supplied from the first nozzle is supplied to a second supply position at a peripheral edge of the upper surface of the substrate supported by the support member, the position being different from the first supply position. At least one second nozzle for cleaning the peripheral edge of the upper surface of the substrate;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 1, wherein radial distances from the peripheral end surfaces of the substrates at the first and second supply positions are the same.   The substrate processing apparatus according to claim 1, wherein distances in a radial direction from the peripheral end surface of the substrate at the first and second supply positions are different from each other. A rotating member provided to be rotatable around a vertical axis, and at least three supports that protrude upward from the rotating member and support the substrate spaced apart from the rotating member by contacting the back surface of the substrate A member and a facing surface facing the upper surface of the substrate supported by the supporting member, and gas is introduced into a space formed between the facing surface and the upper surface of the substrate from a gas discharge port provided on the facing surface. A substrate processing method in a substrate processing apparatus comprising: an opposing member that presses the substrate against the support member by supplying
The processing liquid is supplied from the first nozzle toward the first supply position at the peripheral edge of the upper surface of the substrate supported by the support member, and unnecessary substances existing at the peripheral edge of the upper surface of the substrate are etched to start from the peripheral edge of the upper surface of the substrate. A first etching step to be removed;
A processing liquid of the same type as the processing liquid supplied from the first nozzle toward a second supply position at a peripheral edge of the upper surface of the substrate supported by the support member, the position being different from the first supply position. A second etching step of supplying from at least one or more second nozzles, etching unnecessary materials present on the peripheral surface of the upper surface of the substrate and removing the unnecessary material from the peripheral surface of the upper surface of the substrate;
A substrate processing method comprising:

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