JP5954862B2 - Substrate processing equipment - Google Patents

Description

The present invention relates to a substrate processing equipment for performing processing using the processing solution to the substrate. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Substrates such as a photomask substrate, a ceramic substrate, and a solar cell substrate are included.

  In a manufacturing process of a semiconductor device or a liquid crystal display device, a cleaning process is performed on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device by using a single wafer processing apparatus. Such a single-wafer substrate processing apparatus includes, for example, a spin chuck that rotates while holding the substrate in a horizontal position, and a processing liquid nozzle that supplies a processing liquid to the upper surface of the substrate held by the spin chuck. Yes. A processing liquid is supplied from the processing liquid nozzle to the upper surface of the substrate in a rotating state, thereby forming a liquid film of the processing liquid covering the entire upper surface of the substrate, and the upper surface of the substrate is cleaned by the liquid film of the processing liquid. Processing is performed.

  After the cleaning process, the substrate is dried. In the drying process shown in the following cited document 1, a drying gas is blown from directly above the center of the upper surface of the substrate (the center of rotation of the substrate and its vicinity) in a state where the entire upper surface of the substrate is covered with a liquid film of the processing liquid. As a result, the liquid film of the processing liquid is partially removed from the center of the upper surface of the substrate. Thereafter, by increasing the rotation speed of the substrate by the spin chuck, the liquid film on the upper surface of the substrate is shaken off by the centrifugal force generated by the rotation of the substrate. Thereby, the substrate is dried.

JP-A-7-29866

However, in order to remove the liquid film of the processing liquid by spraying the drying gas, the drying gas needs to have a large flow rate. When a large amount of drying gas is sprayed directly onto the liquid film of the processing liquid, the drying gas and the processing liquid collide violently, and the splashed micro liquid droplets of the processing liquid are removed from the upper surface of the substrate after the processing liquid film is removed. There is a risk of being caught in the center.
Since the centrifugal force due to the rotation of the substrate hardly acts on the center of the upper surface of the substrate, even if the substrate is rotated at a high speed by a spin chuck for drying, the droplet of the processing liquid captured in the center of the upper surface of the substrate Cannot be easily excluded. Therefore, after the drying process, the droplets of the processing liquid may remain in the central portion of the upper surface of the substrate, which may cause poor drying in the central portion of the upper surface of the substrate.

It is an object of the present invention, intended to prevent or suppress the occurrence of drying failure in the upper surface center portion of the substrate, thereby providing a substrate processing equipment which can be subjected to uniform drying over the entire substrate And

In order to achieve the above-mentioned object, the invention described in claim 1 includes a substrate holding means (3) for holding the substrate (W) in a horizontal posture and a substrate held by the substrate holding means. Rotating means (7) for rotating around the vertical axis (C) of the substrate, an opposing surface (15) facing the upper surface of the substrate held by the substrate holding means , and an opening (opening on the opposing surface) a substrate opposing member (6) having a 32), has a fixedly arranged treatment liquid outlet port in the opening (1 8), the process liquid toward from the treatment liquid outlet port on the upper surface of the substrate treatment liquid nozzle for ejecting the (1 7), a treatment liquid supply means for supplying the processing liquid to the treatment liquid nozzle (19, 20), wherein the substrate than the previous SL treatment liquid outlet port in said opening drying gas which is fixedly disposed close to the holding means An outlet (2 2), the supply drying gas nozzle from drying gas discharge port for discharging a drying gas toward the upper surface of the substrate and (2 1), the drying gas into the drying gas nozzle Gas supply means (23, 24, 31) for drying, lifting means (21) for raising and lowering the substrate facing member, the processing liquid nozzle and the drying gas nozzle collectively, the rotating means, and the processing liquid supply And a control means (30) for controlling the drying gas supply means and the elevating means, wherein the control means arranges the substrate facing member, the processing liquid nozzle and the drying gas nozzle at a first position. while rotating the substrate at a first rotation speed Shikatsu, by ejecting the processing liquid from the treatment liquid outlet port, and Ruekimaku formation step to form a treatment liquid film covering the upper surface of the substrate , After the recording film forming step, the substrate facing member, the processing liquid nozzle, and the drying gas nozzle are arranged at a second position closer to the substrate than the first position, and at the first rotational speed, the substrate. In the rotated state, a first flow rate of the drying gas is discharged from the drying gas discharge port, thereby forming a liquid film removal region in which the liquid film of the processing liquid is removed at the center of the upper surface of the substrate. and Ruekimaku removal region forming step is, after the liquid film removing region forming step, by discharging the drying gas of the second flow rate greater than the first flow rate from the drying gas discharge port, the liquid film a removal region enlarged step Ru is larger removal area, after the removal region growing process, to perform a drying step of rotating the substrate in front Symbol greater than the first rotational speed second rotational speed, the substrate processing apparatus ( 1) .

In addition, although the alphanumeric characters in parentheses represent corresponding components in the embodiments described later, the scope of the claims is not intended to be limited to the embodiments. The same applies hereinafter.
According to this configuration, when forming the liquid film removal region, the discharge of the processing liquid is stopped, the substrate held by the substrate holding means is rotated at the first rotation speed, and the drying gas discharge port A first flow rate of drying gas is discharged. At this time, a liquid film removal region is formed at the center of the upper surface of the substrate by the centrifugal force generated by the rotation of the substrate and the blowing of the drying gas onto the center of the upper surface of the substrate. Thereafter, the discharge flow rate of the drying gas to the center of the upper surface of the substrate is increased from the first flow rate to the second flow rate, thereby expanding the liquid film removal region. Next, when the rotation speed of the substrate is increased to the second rotation speed, the liquid film of the treatment liquid on the upper surface of the substrate is shaken off by the centrifugal force due to the rotation of the substrate, and the substrate is dried.

  In the first aspect, since the drying gas discharged from the drying gas discharge port for forming the liquid film removal region is the first flow rate which is a small flow rate, the drying gas is sprayed onto the liquid film of the processing liquid. The liquid droplets of the processing liquid hardly jump up. Therefore, when forming the liquid film removal region, it is possible to prevent the microdroplets of the processing liquid from being captured at the center of the upper surface of the substrate after the processing liquid film is removed. Thereby, generation | occurrence | production of the dry defect in the upper surface center part of a board | substrate can be suppressed or prevented.

  Further, the processing liquid is discharged from the processing liquid discharge port of the processing liquid nozzle. Both the processing liquid discharge port and the drying gas discharge port are arranged in a concentrated manner so as to face the center of the upper surface of the substrate. In this case, it is assumed that the drying gas discharge port of the drying gas nozzle is at a position (upward position) away from the processing liquid discharge port with respect to the substrate holding means, or at the same height as the processing liquid discharge port. If there is, it is conceivable that a large amount of drying gas flows through the immediate side of the treatment liquid discharge port.

  However, when the discharge of the processing liquid from the processing liquid nozzle is stopped, the processing liquid may remain on the inner wall near the processing liquid discharge port (of the piping) of the processing liquid nozzle. In this case, the processing liquid remaining in the processing liquid nozzle is pulled (aspirated) by the flow of a large flow rate of the drying gas that circulates right next to the processing liquid discharge port to be processed into the drying gas. There is a risk of liquid droplets being mixed. As a case where a large amount of drying gas is discharged from the drying gas discharge port, the above-described expansion of the liquid film removal region can be considered. When such a liquid film removal region is expanded, the liquid of the processing liquid is added to the drying gas. When the droplets are mixed, a droplet of the treatment liquid is captured at the center of the upper surface of the substrate after the removal of the treatment liquid film. As a result, there is a risk that a drying defect may occur at the center of the upper surface of the substrate.

  On the other hand, in claim 1, the drying gas discharge port is disposed closer to the substrate holding means than the processing liquid discharge port. Therefore, the drying gas does not flow through the side of the treatment liquid discharge port. For this reason, there is no possibility that the processing liquid remaining in the processing liquid nozzle is mixed into the drying gas discharged from the drying gas discharge port. Thereby, generation | occurrence | production of the dry defect in the upper surface center part of a board | substrate can be suppressed further.

It is also possible to place the drying gas discharge port close to the upper surface of the substrate. In this case, the drying gas from the drying gas discharge port can be applied to the center portion of the upper surface of the substrate with high accuracy, so that drying defects at the center portion of the upper surface of the substrate can be further suppressed.
Further, when forming the liquid film removal region, since the drying gas discharge port is brought close to the upper surface of the substrate, the drying gas from the drying gas discharge port has a small area including the rotation center of the substrate. Sprayed towards the area. In other words, the area of the liquid film of the processing liquid to which the drying gas is blown from the drying gas discharge port (area for receiving the drying gas in the liquid film of the processing liquid) can be reduced in area. Thereby, it is possible to more effectively suppress the splashing of the treatment liquid droplets.

As described in 請 Motomeko 2, wherein, in the liquid film is removed area expansion process, it rotates the front Kimoto plate at the first rotation speed at the time of the extension start of the liquid-film removal areas, the liquid As the film removal region expands, the rotation speed of the substrate may be increased to a third rotation speed that is greater than the first rotation speed and smaller than the second rotation speed.

In this case, since the centrifugal force acting on the liquid film of the processing liquid on the substrate gradually increases, the liquid film removal region formed on the upper surface of the substrate can be accelerated. Thereby, a liquid film removal area | region can be expanded favorably.
As described in claim 3, wherein, when to expand the liquid film removal areas, the board, small third rotational speed than the first greater than the rotational speed and the second rotational speed You may rotate with.

In this case, since the centrifugal force due to the rotation of the substrate acts on the liquid film of the processing liquid on the substrate from the start of the expansion of the liquid film removal region, the liquid film removal region formed on the upper surface of the substrate can be expanded early. Can do. Thereby, a liquid film removal area | region can be expanded favorably.
Fourth aspect of the present invention, the control means, prior to the start of the liquid film-shaped formation step, and discharging the processing liquid from said processing liquid discharge port on the upper surface of the substrate held by the substrate holding means, run the liquid processing step of rotating the substrate at a small liquid treatment speed than larger and the second rotational speed than the first rotation speed, the liquid film-type formed step in succession to the end of the liquid treatment step It is a substrate processing apparatus as described in any one of Claims 1-3 which performs.

  According to this configuration, after the liquid treatment step, the formation of the liquid film, the formation of the liquid film removal region, the expansion of the liquid film removal region, and the rotation at the second rotation speed are executed in this order. After the liquid processing step, the rotation speed of the substrate is lowered from the liquid processing rotation speed to the first rotation speed, thereby forming a liquid film. Thereby, a series of processes from the liquid treatment process to drying can be executed smoothly.

According to a fifth aspect of the present invention, the control means is configured such that the substrate facing member, the processing liquid nozzle, and the drying gas nozzle are arranged at a third position closer to the substrate than the second position. It is a substrate processing apparatus as described in any one of Claims 1-4 which performs the said drying process.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the structure of a shielding board and a rotating shaft. It is a bottom view of a blocking plate. It is process drawing which shows the 1st process example by the substrate processing apparatus shown in FIG. It is a time chart for demonstrating the control content by the control apparatus in the main processes of the 1st processing example. It is an illustration sectional view for explaining one process of the 1st processing example. FIG. 6B is an illustrative sectional view showing a step subsequent to FIG. 6A. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6B. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6C. FIG. 6D is an illustrative sectional view showing a step subsequent to FIG. 6D. It is a time chart for demonstrating the control content by the control apparatus in the main processes of the 2nd processing example. The construction of a substrate treatment apparatus according to another form status is a diagram schematically illustrating.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.
The substrate processing apparatus 1 removes contaminants from the upper surface on the device formation region side of a circular semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate using chemicals and DIW. This is a single wafer type apparatus for performing a cleaning process. In this cleaning process, SC1 (ammonia hydrogen peroxide solution mixture), SC2 (hydrochloric acid hydrogen peroxide solution mixture), SPM (sulfuric acid / hydrogen peroxide mixture), hydrofluoric acid are used as chemical solutions. Buffed hydrofluoric acid (Buffered HF: liquid mixture of hydrofluoric acid and ammonium fluoride), aqueous ammonia and polymer removal solution are used.

  The substrate processing apparatus 1 holds a wafer W in a substantially horizontal posture in a processing chamber 2 partitioned by a partition wall (not shown), and around the substantially vertical rotation axis (vertical axis) C passing through the center of the wafer W. A spin chuck (substrate holding means) 3 for rotating the substrate, a chemical nozzle 4 for supplying a chemical toward the upper surface of the wafer W held by the spin chuck 3, and a cup 5 for accommodating the spin chuck 3. I have. Further, a blocking plate (substrate facing member) 6 for blocking the atmosphere near the upper surface of the wafer W held by the spin chuck 3 from the surroundings is provided above the spin chuck 3.

  The spin chuck 3 includes a spin motor (rotating means) 7, a disk-shaped spin base 9 that is rotated around the rotation axis C by the rotational driving force of the spin motor 7, and substantially the same at a plurality of locations around the periphery of the spin base 9. A plurality of clamping members 10 are provided at intervals and for clamping the wafer W in a substantially horizontal posture. As a result, the spin chuck 3 rotates the spin base 9 by the rotational driving force of the spin motor 7 in a state where the wafer W is held by the plurality of holding members 10, so that the wafer W maintained in a substantially horizontal posture is obtained. It can be rotated around the rotation axis C together with the spin base 9.

Note that the spin chuck 3 is not limited to a sandwiching type, and for example, the wafer W is held in a horizontal posture by vacuum-sucking the back surface of the wafer W, and further rotated around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the wafer W held on the spin chuck 3 may be employed.
The chemical liquid nozzle 4 is, for example, a straight nozzle that discharges chemical liquid in a continuous flow state, and is attached to the distal end portion of the first arm 11 that extends substantially horizontally with the discharge port facing downward. The first arm 11 is provided so as to be rotatable around a predetermined rotation axis. An arm turning mechanism 12 for turning the first arm 11 within a predetermined angle range is coupled to the first arm 11. Due to the turning of the first arm 11, the chemical nozzle 4 has a position on the rotation axis C of the wafer W (a position facing the rotation center of the wafer W) and a position (home position) set to the side of the cup 5. Moved to.

The chemical solution nozzle 4 is connected to a chemical solution supply pipe 13 to which a chemical solution from a chemical solution supply source is supplied. A chemical valve 14 for opening and closing the chemical liquid supply pipe 13 is interposed in the middle of the chemical liquid supply pipe 13. When the chemical valve 14 is opened, the chemical solution is supplied from the chemical solution supply pipe 13 to the chemical solution nozzle 4, and the chemical solution is discharged from the chemical solution nozzle 4.
The blocking plate 6 has a disk shape having a diameter substantially the same as or larger than that of the wafer W. The blocking plate 6 is disposed above the spin chuck 3 in a substantially horizontal posture so that the center thereof is positioned on the rotation axis C of the wafer W. On the lower surface of the blocking plate 6, a circular facing surface 15 that faces the upper surface of the wafer W held by the spin chuck 3 is formed. The facing surface 15 faces the entire upper surface of the wafer W.

On the upper surface of the shielding plate 6, a rotation shaft 16 having a vertical axis passing through the center of the shielding plate 6 (a vertical axis coinciding with the rotation axis of the wafer W) as a central axis is fixed. The rotary shaft 16 is formed in a hollow shape, and a liquid supply pipe (treatment liquid nozzle) 17 and a gas supply pipe (drying gas nozzle) 21 are inserted into the rotary shaft 16 in a state extending in the vertical direction. A rinsing liquid supply pipe (processing liquid supply means) 19 is connected to the liquid supply pipe 17. The rinse liquid supply pipe 19 is provided with a rinse liquid valve (processing liquid supply means) 20 for opening and closing the rinse liquid supply pipe 19.

A drying gas supply pipe (drying gas supply means) 23 is connected to the gas supply pipe 21. The drying gas supply pipe 23 includes a drying gas valve (drying gas supply means) 24 for opening and closing the drying gas supply pipe 23, and an opening degree of the drying gas supply pipe 23 to adjust a gas discharge port. A flow rate adjusting valve (drying gas supply means) 31 for adjusting a gas discharge flow rate from 22 (described later) is interposed.

At the time of processing on the wafer W, the blocking plate 6 is disposed at a predetermined position with the opposing surface 15 spaced from the upper surface of the wafer W by a predetermined distance.
In addition, the substrate processing apparatus 1 includes a control device (control means) 30 configured by a microcomputer. The control device 30 controls driving of the spin motor 7, the arm turning mechanism 12, the arm elevating mechanism 26 and the blocking plate rotating mechanism 27 according to a predetermined program. The control device 30 controls the opening and closing of the valves 20 and 24 and the opening of the flow rate adjusting valve 31 according to a predetermined program.

FIG. 2 is a cross-sectional view showing the configuration of the blocking plate 6 and the rotating shaft 16. FIG. 3 is a bottom view of the blocking plate 6.
A hollow portion of the rotating shaft 16 (portion defined by the inner wall of the rotating shaft 16) forms a cylindrical tube insertion passage (opening) 32. The lower end of the tube insertion passage 32 opens in a circular shape on the facing surface 15 of the blocking plate 6. In the pipe insertion passage 32, the liquid supply pipe 17 and the gas supply pipe 21 are respectively inserted in the vertical direction and at a minute interval (for example, 2 mm) in the left-right direction. The liquid supply pipe 17 and the gas supply pipe 21 extend in the pipe insertion passage 32 substantially coaxially with the rotary shaft 16 and are supported by a cylindrical block body 35 fixed to a stationary member different from the rotary shaft 16. . The liquid supply pipe 17 and the gas supply pipe 21 penetrate the block body 35 up and down, and their lower ends protrude downward from the lower surface of the block body 35. With respect to the entire circumference of the block body 35, a gap is formed between the outer peripheral surface of the block body 35 and the inner wall of the tube insertion passage 32. In other words, the outer peripheral surface of the block body 35 and the inner wall of the tube insertion passage 32 are formed. A cylindrical space 29 that surrounds the entire outer periphery of the block body 35 is formed between them.

  The lower end of the liquid supply pipe 17 has a liquid discharge port (treatment liquid discharge port) 18 that opens downward. The liquid discharge port 18 is disposed so as to substantially coincide with a vertical axis passing through the center of the blocking plate 6 (a vertical axis coinciding with the rotation axis of the wafer W). In other words, the liquid discharge port 18 is disposed so as to face the rotation center of the wafer W held by the spin chuck 3. Further, the height position of the liquid discharge port 18 is above the facing surface 15 of the blocking plate 6.

  The lower end of the gas supply pipe 21 has a gas discharge port (drying gas discharge port) 22 that opens downward. The gas discharge ports 22 are arranged so as to substantially coincide with a vertical axis passing through the center of the blocking plate 6 (a vertical axis coinciding with the rotation axis C of the wafer W). In other words, the gas discharge port 22 is arranged to face the rotation center of the wafer W held by the spin chuck 3. The height of the gas discharge port 22 is above the facing surface 15 of the blocking plate 6 and below the liquid discharge port 18. In other words, the gas discharge port 22 is disposed closer to the spin chuck 3 than the liquid discharge port 18. An interval in the vertical direction between the liquid discharge port 18 and the gas discharge port 22 is, for example, 10 mm. Moreover, the space | interval of the up-down direction between the gas discharge port 22 and the opposing surface 15 is 10 mm, for example.

As shown in FIGS. 1 to 3, when the rinse liquid valve 20 is opened, DIW as an example of the rinse liquid is supplied from the rinse liquid supply pipe 19 to the liquid supply pipe 17. The DIW supplied to the liquid supply pipe 17 is discharged downward from the liquid discharge port 18.
Further, when the drying gas valve 24 is opened, nitrogen gas as an example of a drying gas (inert gas) is supplied from the drying gas supply pipe 23 to the gas supply pipe 21. Nitrogen gas supplied to the gas supply pipe 21 is discharged downward from the gas discharge port 22. Since the gas discharge port 22 is arranged closer to the spin chuck 3 than the liquid discharge port 18, the nitrogen gas discharged from the gas discharge port 22 does not flow through the side of the liquid discharge port 18.

  The cylindrical space 29 can also be used as a nitrogen gas flow passage through which nitrogen gas as an example of an inert gas flows. In this case, if nitrogen gas from a nitrogen gas supply source is supplied to the cylindrical space 29 through a nitrogen gas supply pipe 29 </ b> B (shown by a broken line in FIG. 1), the nitrogen gas is supplied into the cylindrical space 29. The cylindrical space 29 is annularly opened around the lower end of the block body 35, and the nitrogen gas supplied to the cylindrical space 29 passes through an annular opening 29A at the lower end of the cylindrical space 29 as shown by a broken line in FIG. It is discharged downward.

  FIG. 4 is a process diagram showing a first processing example by the substrate processing apparatus 1. As shown in FIG. 4, in the first processing example by the substrate processing apparatus 1, a chemical processing process (step S <b> 2) and a rinsing processing process (liquid processing) are performed on the wafer W carried into the processing chamber 2 (see FIG. 1). Step S3), liquid filling step (liquid film forming step. Step S4), hole making step (liquid film removing step. Step S5), hole expanding step (liquid film removing region expanding step. Step S6) and drying step (Step Each process of S7) is performed. Thereafter, the wafer W is carried out of the processing chamber 2 (step S8). In this processing example 1, the liquid filling process in step S4, the drilling process in step S5, and the hole expanding process in step S6 are performed in this order after the rinsing process in step S3 is completed and before the drying process in step S7. The

  FIG. 5 is a time chart for explaining the contents of control by the control device 30 in each process from the rinsing process to the drying process in the first processing example. 6A to 6E are schematic cross-sectional views for explaining each process from the rinse treatment process to the drying process of the first treatment example. Hereinafter, a first processing example performed in the substrate processing apparatus 1 will be described with reference to FIGS.

  The wafer W to be processed is loaded into the processing chamber 2 by a transfer robot (not shown), and is transferred to the spin chuck 3 with its upper surface facing upward (step S1: wafer loading). At this time, the blocking plate 6 is retracted to a position far apart above the spin chuck 3 so as not to hinder the loading of the wafer W. The chemical nozzle 4 is disposed at the home position on the side of the cup 5.

  After the wafer W is held on the spin chuck 3, the control device 30 controls the spin motor 7 so that the wafer W is subjected to a liquid processing rotation speed (liquid processing rotation speed. For example, a predetermined rotation speed of 300 to 1200 rpm (for example, 500 rpm). )). Further, the control device 30 turns the first arm 11 to move the chemical nozzle 4 from the home position onto the rotation axis C of the wafer W.

When the movement of the chemical liquid nozzle 4 is completed, the control device 30 opens the chemical liquid valve 14 and supplies the chemical liquid from the chemical liquid nozzle 4, whereby the processing using the chemical liquid is performed on the upper surface of the wafer W (step). S2: Chemical solution treatment step).
When a predetermined time has elapsed since the start of the discharge of the chemical liquid from the chemical liquid nozzle 4, the control device 30 closes the chemical liquid valve 14 and stops the supply of the chemical liquid from the chemical liquid nozzle 4. Then, the chemical nozzle 4 is returned from the rotation axis C of the wafer W to the home position by the turning of the first arm 11.

Note that, during the chemical solution processing step of step S2, the control device 30 controls the arm turning mechanism 12 to turn the first arm 11 within a predetermined angular range, thereby changing the supply position of the chemical solution on the upper surface of the wafer W. The wafer W may be moved while drawing an arc-shaped locus within a range from the rotation center of the wafer W (a point on the rotation axis C in the wafer W) to the periphery of the wafer W.
Next, a rinsing process in step S3 is performed.

  As shown in FIGS. 1, 5, and 6 </ b> A, the control device 30 controls the arm elevating mechanism (drying gas nozzle elevating means) 26 to lower the blocking plate 6 to the rinse processing position. The rinse processing position is a height position at which the distance between the facing surface 15 of the blocking plate 6 and the upper surface of the wafer W held by the spin chuck 3 is about 65 mm, for example. Further, as described above, the liquid discharge port 18 and the gas discharge port 22 face the rotation center of the upper surface of the wafer W.

  When the lowering of the blocking plate 6 is completed, the control device 30 opens the rinse liquid valve 20 and discharges, for example, 2 to 3 L / min of DIW from the liquid discharge port 18. The DIW discharged from the liquid discharge port 18 is supplied to the center of the upper surface of the rotating wafer W. Further, the control device 30 opens the drying gas valve 24. At this time, the opening degree of the flow rate adjusting valve 31 is set so that the supply flow rate of the nitrogen gas from the gas discharge port 22 becomes a predetermined small flow rate (first flow rate, for example, 5 to 10 L / min). ing. Therefore, nitrogen gas having a small flow rate as described above is discharged from the gas discharge port 22.

The DIW supplied to the upper surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows on the upper surface of the wafer W toward the peripheral edge, and spreads over the entire upper surface of the wafer W (see FIG. 6A). Thereby, the chemical solution adhering to the upper surface of the wafer W is washed away by DIW.
As described above, in the first processing example, after the rinsing process in step S3 is completed and before the drying process in step S7, the liquid filling process in step S4, the drilling process in step S5, and the hole expanding process in step S6 are performed. It is executed in this order.

When a predetermined rinsing process period (for example, 30 seconds) elapses from the start of DIW discharge, control device 30 controls spin motor 7 to reduce the rotation speed of wafer W to a low rotation speed (first rotation speed, for example, 10 rpm). (Step S4: liquid filling step). In addition, as shown in FIGS. 1, 5 and 6B, the control device 30 controls the arm lifting mechanism 26 to lower the blocking plate 6 in the rinse processing position to the liquid buildup position (first position) . The liquid accumulation position is a height position at which the distance between the facing surface 15 of the blocking plate 6 and the upper surface of the wafer W held by the spin chuck 3 is, for example, about 20 to 30 mm.

  At this time, the DIW deposited on the center of the upper surface of the wafer W is pushed by the subsequent DIW and spreads outward on the wafer W. However, since the rotational speed of the wafer W is low, the centrifugal force acting on the DIW on the wafer W is small, so the flow rate of DIW discharged from the periphery of the wafer W is small, and a large amount of DIW is on the wafer W. Accumulate. Accordingly, a DIW liquid film (a liquid film of the processing liquid) 40 having a predetermined thickness (for example, about 2 mm) is formed over the entire upper surface of the wafer W.

Next, the drilling process in step S5 will be described.
When a predetermined liquid accumulation period (for example, 10 seconds) elapses from the deceleration (rotation speed reduction) of the wafer W, the control device 30 closes the rinsing liquid valve 20 as shown in FIGS. The discharge of DIW from the discharge port 18 is stopped. Further, the control device 30 controls the arm elevating mechanism 26 to lower the blocking plate 6 located at the liquid filling position to the drilling position (second position) . The drilling position is a height position such that the distance between the facing surface 15 of the blocking plate 6 and the upper surface of the wafer W held by the spin chuck 3 is about 10 mm, for example. At this time, the liquid film 40 is partially removed from the DIW liquid film 40 on the center of the upper surface of the wafer W by the centrifugal force generated by the rotation of the wafer W and the blowing of nitrogen gas to the center of the upper surface of the wafer W. As a result, a small-diameter circular hole (liquid film removal region) 50 is formed (formed) (step S5: drilling step).

  In the processing example 1, since the nitrogen gas discharged from the gas discharge port 22 for drilling (formation of the liquid film removal region) has a small flow rate, when the nitrogen gas is sprayed on the liquid film 40 of DIW, DIW Almost no splashing of micro droplets occurs. Thereby, it is possible to prevent the DIW micro droplets from being captured at the center of the upper surface of the wafer W after the DIW liquid film is removed at the time of drilling.

Further, in the drilling process in step S5, the gas discharge ports 22 are arranged closer to the upper surface of the wafer W than in the rinsing process in step S3 and the liquid filling process in step S4. Therefore, the nitrogen gas from the gas discharge port 22 can be accurately applied to the center of the upper surface of the wafer W (position closer to the rotation center of the wafer W).
Further, since the gas discharge port 22 is arranged close to the upper surface of the wafer W, in addition, a region of the DIW liquid film 40 to which nitrogen gas is blown from the gas discharge port 22 (region receiving nitrogen gas). Can be reduced in area. Therefore, the amount of nitrogen gas sprayed per unit area in the region of the DIW liquid film 40 to which nitrogen gas is sprayed increases. Therefore, even when the discharge flow rate of nitrogen gas from the gas discharge port 22 is small, the hole 50 can be formed in the liquid film 40 of DIW. Thereby, the hole 50 can be satisfactorily formed in the liquid film 40 of the DIW while further preventing the DIW droplets from jumping up.

  In addition, execution of the drilling process in step S5 is started in a state where the upper surface of the wafer W is covered from above by the facing surface 15 of the blocking plate 6. As described above, since the nitrogen gas discharged from the gas discharge port 22 for drilling has a small flow rate, the blowing of the nitrogen gas to the DIW liquid film 40 almost causes the DIW micro-droplet to jump up. Furthermore, since the upper surface of the wafer W is covered from above by the facing surface 15, the DIW droplets scatter to the surroundings when nitrogen gas is blown onto the upper surface of the wafer W, and the surrounding members It is possible to more reliably suppress contamination. Further, since the facing surface 15 faces the entire upper surface of the wafer W, it is possible to further effectively suppress the DIW liquid droplet scattering.

Next, the hole enlargement process in step S6 will be described.
When a predetermined drilling period (for example, 3 to 10 seconds) elapses after the DIW discharge is stopped from the liquid discharge port 18, the control device 30 controls the flow rate adjustment valve 31, as shown in FIGS. Then, the discharge flow rate of nitrogen gas from the gas discharge port 22 is increased to a large flow rate (second flow rate, for example, 100 to 150 L / min) (step S6: hole expansion step). Thereby, the diameter of the hole 50 is expanded (enlarged).

  In the hole enlargement process of step S6, after the discharge flow rate of the nitrogen gas is increased, the spin motor 7 is controlled so that the rotation speed of the wafer W decreases with the passage of time (progress of the hole enlargement process). For example, the rotation speed is increased (increased) from a hole expansion rotation speed (third rotation speed, for example, 50 rpm) from 10 rpm. In this embodiment, as shown in FIG. 5, the rotation speed of the wafer W is gradually increased in proportion to the passage of time from the low rotation speed to the hole expansion rotation speed over the entire period of the hole expansion process. . In this case, since the centrifugal force acting on the DIW liquid film 40 on the wafer W gradually increases, the holes 50 on the wafer W can be expanded at an accelerated rate. Thereby, the hole 50 can be expanded favorably.

However, instead of this, the hole expansion rotation speed may be reached in the middle of the hole expansion process, and then the hole expansion rotation speed may be maintained.
Further, in the hole enlargement process of step S6, the blocking plate 6 is maintained at the drilling position. In this way, in the hole enlargement process, the gas discharge port 22 is disposed close to the upper surface of the wafer W. Nitrogen gas from the outlet 22 can be accurately applied to the center of the upper surface of the wafer W.

Thereafter, when a predetermined hole enlargement period (for example, 5 to 10 seconds) elapses from the increase in the discharge flow rate of nitrogen gas from the gas discharge port 22, the control device 30 moves the arm as shown in FIGS. The lifting mechanism 26 is controlled to lower the blocking plate 6 in the drilling position to the drying position (third position) .
As a result, an air flow of nitrogen gas is formed between the surface of the wafer W and the facing surface 15 from the center of the wafer W toward the peripheral edge, and the space between the surface of the wafer W and the facing surface 15 is filled with nitrogen gas. Is done. The drying position is a height position at which the distance between the facing surface 15 of the blocking plate 6 and the upper surface of the wafer W held by the spin chuck 3 is about 0.5 to 2.5 mm, for example. In other words, the drying position of the blocking plate 6 is a position where the facing surface 15 of the blocking plate 6 is close to the upper surface of the wafer W held by the spin chuck 3 with a minute gap.

  In addition, the control device 30 controls the spin motor 7 to accelerate the rotation speed of the wafer W to a predetermined high rotation speed (second rotation speed, for example, 1500 rpm). Thus, the DIW liquid film 40 on the wafer W is shaken off and removed (step S7: drying process). Furthermore, during the drying process, the control device 30 rotates the blocking plate 6 in the same direction as the rotation direction of the wafer W in synchronization with the rotation of the wafer W. Therefore, the atmosphere in the vicinity of the upper surface of the wafer W held by the spin chuck 3 is blocked from the periphery, and a stable airflow is formed between the upper surface of the wafer W and the blocking plate 6.

  When the rotation of the wafer W at a high rotational speed is continued for a predetermined time, the control device 30 controls the spin motor 7 to stop the rotation of the wafer W and close the drying gas valve 24. Further, the control device 30 drives the arm lifting mechanism 26 to raise the blocking plate 6 to a position far away from the spin chuck 3. Thereby, the cleaning process for one wafer W is completed, and the processed wafer W is unloaded from the processing chamber 2 by the transfer robot (step S8).

  As described above, according to the processing example 1 performed in the substrate processing apparatus 1, the DIW ejection is stopped and the wafer W held on the spin chuck 3 is rotated at a low rotational speed in the drilling process of step S <b> 5. At the same time, a small flow of nitrogen gas is discharged from the gas discharge port 22. At this time, the hole 50 is formed at the center of the upper surface of the wafer W by the centrifugal force generated by the rotation of the wafer W and the blowing of nitrogen gas to the center of the upper surface of the wafer W. Thereafter, the hole 50 is enlarged by increasing the discharge flow rate of nitrogen gas to the center of the upper surface of the wafer W from a small flow rate to a large flow rate. Next, when the rotation speed of the wafer W is increased to a high rotation speed, the DIW liquid film 40 on the upper surface of the wafer W is shaken off by the centrifugal force generated by the rotation of the wafer W, and the wafer W is thereby dried.

  Further, in this processing example 1, since the nitrogen gas discharged from the gas discharge port 22 for drilling has a small flow rate, when the nitrogen gas is sprayed onto the DIW liquid film 40, the DIW micro droplets are discharged. Almost no jumping occurs. Therefore, it is possible to prevent DIW microdroplets from being captured at the center of the upper surface of the wafer W after the DIW liquid film removal in the drilling process of step S5. Thereby, it is possible to suppress or prevent the occurrence of poor drying at the center of the upper surface of the wafer W.

  Further, DIW is discharged from the liquid discharge port 18 of the liquid supply pipe 17. Both the liquid discharge port 18 and the gas discharge port 22 are collectively disposed so as to face the center of the upper surface of the wafer W. In this case, suppose that the gas discharge port 22 of the gas supply pipe 21 is located at a position (upward position) away from the liquid discharge port 18 with respect to the spin chuck 3 or at a height position similar to the liquid discharge port 18. If there is, it is conceivable that a large flow of nitrogen gas circulates just beside the liquid discharge port 18.

  However, when DIW discharge from the liquid supply pipe 17 is stopped, the processing liquid may remain on the inner wall of the liquid supply pipe 17 near the liquid discharge port 18. In this case, the processing liquid remaining in the liquid supply pipe 17 is pulled (aspirated) by a flow of nitrogen gas having a large flow rate that flows immediately to the liquid discharge port 18, and DIW is added to the nitrogen gas. There is a risk of droplets being mixed. As a case where a large flow rate of nitrogen gas is discharged from the gas discharge port 22, a hole expansion process in step S6 is conceivable. When a droplet of the processing liquid is mixed into the nitrogen gas in such a hole expansion process, the DIW liquid film is removed. As a result of DIW droplets being captured at the center of the upper surface of the subsequent wafer W, poor drying may occur at the center of the upper surface of the wafer W.

  On the other hand, in Processing Example 1, the gas discharge port 22 is disposed closer to the spin chuck 3 than the liquid discharge port 18. Accordingly, since nitrogen gas does not flow through the side of the liquid discharge port 18, there is no possibility that DIW droplets remaining in the liquid supply pipe 17 are mixed into the nitrogen gas discharged from the gas discharge port 22. Thereby, generation | occurrence | production of the dry defect in the upper surface center part of the wafer W can be suppressed further.

Further, in the hole making process in step S5 and the hole expanding process in step S6, the gas discharge port 22 is brought close to the upper surface of the wafer W. Therefore, the nitrogen gas from the gas discharge port 22 can be accurately applied to the center of the upper surface of the wafer W. Thereby, the dry defect in the center part of the upper surface of the wafer W can be further suppressed.
FIG. 7 is a time chart for explaining the contents of control by the control device 30 in each step from the rinse treatment step to the drying step in the second treatment example.

In treatment example 2, as in treatment example 1, the chemical solution treatment step (step S2 shown in FIG. 4), the rinse treatment step (step S3 shown in FIG. 4), the liquid filling step (step S4 shown in FIG. 4), and the drilling step (FIG. 4, step S5), hole expansion step (step S6 shown in FIG. 4), and drying step (step S7 shown in FIG. 4) are executed in this order.
The difference between Process Example 2 and Process Example 1 is that the wafer W is rotated at the hole expansion rotation speed (third rotation speed) from the start in the hole expansion process of Step S6. About a point, it is the same as that of the example 1 of a process. In this case, since the centrifugal force due to the rotation of the wafer W acts on the liquid film 40 of DIW on the wafer W from the start of the hole expansion process, the hole 50 can be expanded at an early stage. Thereby, the hole 50 can be expanded favorably.

Figure 8 is a diagram schematically showing the configuration of the nozzle unit 104 of the substrate processing apparatus 101 according to other forms state.
In the embodiment of FIG. 8, parts corresponding to those shown in the embodiment of FIGS. 1 to 7 are denoted by the same reference numerals as in FIGS. 1 to 7, and description thereof is omitted.
In the substrate processing apparatus 1 shown in FIGS. 1 to 7, supply of DIW in each of the rinsing process (step S3), the liquid filling process (step S4), the drilling process (step S5), and the hole enlargement process (step S6). The nitrogen gas was supplied by using the liquid supply pipe 17 and the gas supply pipe 21 inserted through the pipe insertion passage 32 opened on the opposing surface 15 of the shielding plate 6. On the other hand, the substrate processing apparatus 101 includes a nozzle unit 104 having a processing liquid nozzle 102 and a drying gas nozzle 103 provided separately from the blocking plate 6, and using these processing liquid nozzle 102 and the drying gas nozzle 103, DIW supply and nitrogen gas supply are performed in each of the above steps (steps S3 to S6).

  The processing liquid nozzle 102 is formed at the liquid flow pipe 105 and the lower end of the liquid flow pipe 105, and is a liquid discharge port (process liquid discharge port) that discharges DIW as an example of the processing liquid flowing through the liquid flow pipe 105 downward. Outlet) 106. The drying gas nozzle 103 is formed at the gas circulation pipe 107 and the lower end of the gas circulation pipe 107, and discharges nitrogen gas as an example of the drying gas flowing through the gas circulation pipe 107 downward (drying). Gas outlet 108). The liquid circulation pipe 105 and the gas circulation pipe 107 are each provided in a vertical posture.

  The nozzle unit 104 includes a holder 109 that directly supports the processing liquid nozzle 102 and the drying gas nozzle 103. A movement mechanism (drying gas nozzle lifting / lowering means) 110 for moving the holder 109 is coupled to the holder 109. Further, a rinse liquid supply pipe (not shown) similar to the rinse liquid supply pipe 19 (see FIG. 1) is connected to the liquid circulation pipe 105, and the rinse liquid valve 20 (FIG. 1) is connected to the rinse liquid supply pipe. A rinse liquid valve (not shown) similar to that shown in FIG.

  The gas distribution pipe 107 is connected to a drying gas supply pipe (not shown) similar to the drying gas supply pipe 23 (see FIG. 1), and the drying gas supply pipe is similar to the drying gas valve 24. A drying gas valve (not shown) and a flow rate adjusting valve (not shown) similar to the flow rate adjusting valve 31 are interposed. These valves and the moving mechanism 110 are connected to the control device 30 as a control target.

  The control device 30 controls the moving mechanism 110 to arrange the nozzle unit 104 so that the liquid discharge port 106 and the gas discharge port 108 face the rotation center of the wafer W held by the spin chuck 3. In this state, the same processing as the processing example 1 and processing example 2 described above is performed on the upper surface of the wafer W. In this case, the height position of the liquid discharge port 106 and the gas discharge port 108 is set in the rinse process step (step shown in FIG. 4) by controlling the moving mechanism 110 to raise and lower the support portion 109 (the entire nozzle unit 104). S3), the liquid filling step (step S4 shown in FIG. 4), the drilling step (step S5 shown in FIG. 4), and the hole enlargement step (step S6 shown in FIG. 4), the height position may be set. it can.

As mentioned above, although two embodiment of this invention was described, this invention can be implemented also with another form.
Moreover, the rinse process was illustrated as a liquid process using a process liquid, and the case where DIW was used as a rinse liquid in this rinse process was mentioned as an example and demonstrated. However, the rinse liquid is not limited to DIW, and carbonated water, electrolytic ionic water, ozone water, reduced water (hydrogen water), magnetic water, and the like can also be employed as the rinse liquid.

Nitrogen gas is mentioned as an example of the drying gas, but clean air or other inert gas can be used as the drying gas.
In addition, various design changes can be made within the scope of matters described in the claims.

1,101 Substrate processing equipment 3 Spin chuck (substrate holding means)
6 Barrier plate (substrate facing member)
7 Spin motor (rotating means)
15 Opposing surface 17 Liquid supply pipe (treatment liquid nozzle)
18 Liquid outlet (treatment liquid outlet)
21 Gas supply pipe (drying gas nozzle)
22 Gas outlet (drying gas outlet)
26 Arm lifting mechanism (drying gas nozzle lifting mechanism)
30 Control device (control means)
32 Pipe insertion passage (opening)
40 DIW liquid film (liquid film of treatment liquid)
50 holes (liquid film removal area)
102 treatment liquid nozzle 103 drying gas nozzle 106 liquid discharge port (treatment liquid discharge port)
108 Gas outlet (drying gas outlet)
110 Moving mechanism (Drying gas nozzle lifting / lowering means)
C Rotation axis (vertical axis)
W Wafer (Substrate)

Claims (5)

A substrate holding means for holding the substrate in a horizontal position;
A rotating means for rotating the substrate held by the substrate holding means around a predetermined vertical axis;
A substrate facing member having a facing surface facing the upper surface of the substrate held by the substrate holding means , and an opening opening in the facing surface;
Has a fixedly arranged treatment liquid outlet port in the opening, a treatment liquid nozzle for ejecting the processing liquid toward the upper surface of the substrate from the treatment liquid outlet port,
Treatment liquid supply means for supplying the treatment liquid to the treatment liquid nozzle;
Has a fixedly arranged drying gas discharge port than the pre-Symbol treatment liquid outlet port closer to said substrate holding means within said opening, for drying the drying gas discharge port toward the upper surface of the substrate A gas nozzle for drying for discharging gas;
A drying gas supply means for supplying a drying gas to the drying gas nozzle;
Elevating means for elevating and lowering the substrate facing member, the treatment liquid nozzle, and the drying gas nozzle all together,
Control means for controlling the rotation means, the treatment liquid supply means, the drying gas supply means and the lifting means,
The control means includes
By discharging the processing liquid from the processing liquid discharge port in a state where the substrate facing member, the processing liquid nozzle and the drying gas nozzle are arranged at the first position and the substrate is rotated at the first rotation speed. a Ruekimaku formation step to form a treatment liquid film covering the upper surface of the substrate,
After the liquid film forming step, the substrate facing member, the processing liquid nozzle, and the drying gas nozzle are disposed at a second position closer to the substrate than the first position, and at the first rotational speed. In the rotated state, a first flow rate of the drying gas is discharged from the drying gas discharge port, thereby forming a liquid film removal region in which the liquid film of the processing liquid is removed at the center of the upper surface of the substrate. and Ruekimaku removal region forming step is,
After the liquid film removal region forming step, the by discharging drying from the gas outlet of the second flow rate greater than said first flow rate drying gas, the liquid film removal areas Ru is enlarged removal region growing process And
After the removal region growing process, to perform a drying step of rotating the substrate in front Symbol greater than the first rotational speed second rotational speed, the substrate processing apparatus. Wherein, in the liquid film is removed area enlargement process, at the time of the extension start of the liquid-film removal areas by rotating the front Kimoto plate at the first rotation speed, with the progress of expansion of the liquid film removal areas The substrate processing apparatus according to claim 1, wherein the rotation speed of the substrate is increased to a third rotation speed that is larger than the first rotation speed and smaller than the second rotation speed. Wherein, when to expand the liquid film removal areas, the board is rotated at a small third rotational speed than the first greater than the rotational speed and the second rotational speed, according to claim 1 Substrate processing equipment. Wherein, prior to the start of the liquid film-shaped formation step, the ejected treatment liquid from the treatment liquid outlet port on the upper surface of the substrate held by the substrate holding unit, the first rotational speed the substrate A liquid treatment step of rotating at a liquid treatment rotation speed greater than and less than the second rotation speed,
The liquid processing step ends on continuously performing the liquid film-shaped formation step, a substrate processing apparatus according to any one of claims 1-3.   The said control means performs the said drying process in the state which has arrange | positioned the said board | substrate opposing member, the said process liquid nozzle, and the said gas nozzle for drying in the 3rd position nearer to the said board | substrate than the said 2nd position. The substrate processing apparatus as described in any one of 1-4.

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