JP2005268308A - Resist peeling method and resist peeling apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resist peeling method and apparatus for beautifully removing resist formed on the surface of a substrate. <P>SOLUTION: The entire region of the surface of a wafer W is wetted with aqueous solution of hydrogen peroxide because the aqueous solution of hydrogen peroxide is supplied to the surface of the wafer W rotating at a higher speed prior to the process to form a liquid film of sulfuric acid on the surface of the wafer W. Accordingly, in the process to form the liquid film of sulfuric acid, the sulfuric acid supplied to the center of the surface of the wafer W concentrically spreads around the supply location on the surface of the wafer W without any influence of hydrophilic property and pattern formed on the surface of the wafer W. Therefore, the liquid film of sulfuric acid having almost uniform thickness is formed to the entire area of the surface of the wafer W. Accordingly, SPM can be produced all over the whole surface of the wafer W, by supplying hydrogen peroxide solution after that. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  This invention has become unnecessary from the surface of various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, etc. The present invention relates to a resist stripping method and a resist stripping apparatus for stripping and removing a resist.

  In the manufacturing process of a semiconductor device or a liquid crystal display device, for example, a process (resist stripping process) is performed to remove an unnecessary resist from the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. As a method of resist stripping, a batch method for processing a plurality of substrates at once has been the mainstream, but recently, with the increase in size of the substrate to be processed, the resist stripping is performed on the surface of the substrate. A single-wafer method that supplies a liquid and processes substrates one by one has been attracting attention.

For example, the strip-type resist stripping process includes a spin chuck that rotates while holding the substrate substantially horizontal, and sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide solution on the surface (upper surface) of the substrate held by the spin chuck. (H ₂ O ₂₎ can be is carried out at device provided with a nozzle for supplying respectively. That is, by rotating the substrate with a spin chuck at a low rotation speed of about 10 rpm and supplying sulfuric acid to the vicinity of the rotation center of the surface of the rotating substrate, the sulfuric acid is in a liquid film state on the surface of the substrate. After the reservoir, hydrogen peroxide solution is supplied to the sulfuric acid liquid film. When aqueous hydrogen peroxide liquid film of the sulfuric acid is fed, by reaction with sulfuric acid and hydrogen peroxide solution, the resist stripping solution containing H ₂ SO ₅ is generated by the strong oxidizing power of the H ₂ SO ₅ The resist formed on the surface of the substrate is peeled off and removed.
Japanese Patent Application Laid-Open No. 50-21681

  However, since the resist is hydrophobic, the weak centrifugal force due to the low-speed rotation of the substrate may cause the sulfuric acid not to spread uniformly on the surface of the substrate, which may cause a portion where sulfuric acid is not supplied on the surface of the substrate. Also, in the case of a substrate having a lattice pattern formed on the surface, the sulfuric acid supplied to the surface of the substrate spreads along the pattern, so that a portion where no sulfuric acid is supplied may be formed on the surface of the substrate. It was. If there is a portion where sulfuric acid is not supplied on the surface of the substrate, the resist is not removed at that portion because the resist stripping solution is not generated.

  Accordingly, an object of the present invention is to provide a resist stripping method and a resist stripping apparatus that can supply a resist stripping solution uniformly over the entire surface of the substrate and can cleanly remove the resist formed on the surface of the substrate. It is to be.

  In order to achieve the above-mentioned object, the invention according to claim 1 is to provide a resist formed on the surface of the substrate (W) using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide. A liquid film forming step (S2) for supplying sulfuric acid to the surface of a substrate to be processed and forming a liquid film by accumulation of sulfuric acid on the surface of the substrate; Subsequent to the formation process, by supplying hydrogen peroxide solution to the surface of the substrate on which a liquid film of sulfuric acid is formed, the resist is stripped by mixing sulfuric acid and hydrogen peroxide solution on the substrate surface. Prior to the resist stripping solution generating step (S3) for generating a solution and the liquid film forming step, hydrogen peroxide solution or pure water is supplied to the surface of the substrate to be processed, and the hydrogen peroxide solution or pure water is used. Wetting step (S1) for wetting the surface of the substrate And resist removal method which comprises a.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to the present invention, prior to the liquid film forming step of forming a sulfuric acid liquid film on the surface of the substrate, the surface of the substrate is wetted with hydrogen peroxide water or pure water.
Thereby, in the liquid film forming step, sulfuric acid supplied to the surface of the substrate spreads on the surface of the substrate without being affected by the hydrophobicity of the resist and the pattern formed on the surface of the substrate. Therefore, since a liquid film of sulfuric acid having a substantially uniform film thickness is uniformly formed over the entire surface of the substrate, by supplying hydrogen peroxide water to the surface of the substrate after the formation of the liquid film of sulfuric acid, A resist stripping solution can be generated over the entire surface of the substrate, and the resist stripping solution can strip cleanly without leaving the resist formed on the surface of the substrate.

  The invention according to claim 2 is a method for stripping a resist formed on the surface of a substrate (W) using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide. A liquid film forming step of supplying the resist stripping solution to the surface of the substrate to be processed, and forming a liquid film on the surface of the substrate by liquid buildup of the resist stripping solution, and prior to this liquid film forming step, And a wetting step of supplying any one liquid of sulfuric acid, hydrogen peroxide water and pure water to the surface of the substrate to be treated, and moistening the surface of the substrate with the liquid. This is a resist stripping method.

According to the present invention, prior to the liquid film forming step of forming a resist stripping liquid film on the surface of the substrate, the surface of the substrate is wetted with sulfuric acid, hydrogen peroxide solution or pure water.
Thereby, in the liquid film forming step, the resist stripping solution supplied to the surface of the substrate spreads on the surface of the substrate without being affected by the hydrophobicity of the resist and the pattern formed on the surface of the substrate. For this reason, a liquid film of a resist stripping solution having a substantially uniform film thickness is formed over the entire surface of the substrate, and the resist stripping solution can be used for clean stripping without leaving the resist formed on the surface of the substrate.

A third aspect of the present invention is the resist stripping according to the first or second aspect, wherein in the wetting step, the substrate to be processed is rotated at a predetermined high rotation speed around an axis intersecting the surface thereof. Is the method.
According to the present invention, by supplying a liquid such as a hydrogen peroxide solution near the rotation center of a substrate rotating at high speed, the liquid is supplied to the substrate regardless of the hydrophobicity of the resist and the presence or absence of a pattern on the surface of the substrate. The entire surface of the substrate can be quickly spread, and the entire surface of the substrate can be quickly wetted.

  The invention described in claim 4 is a resist stripping device for stripping a resist formed on the surface of a substrate (W) using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide. A substrate holding means (1) for holding the substrate with the surface facing upward, and a sulfuric acid supply means (2, 22) for supplying sulfuric acid to the surface of the substrate held by the substrate holding means. Hydrogen peroxide solution supply means (3, 32) for supplying hydrogen peroxide solution to the surface of the substrate held by the substrate holding device; and pure water on the surface of the substrate held by the substrate holding device. The pure water supply means (4, 42) for supplying water and the hydrogen peroxide water supply means or pure water supply means are controlled so that the surface of the substrate held by the substrate holding means Wetting control means (5) for wetting with pure water Subsequent to the control by the wetness control means, the sulfuric acid supply means is controlled to form a liquid film formation control means (5) for forming a liquid film by accumulation of sulfuric acid on the surface of the substrate held by the substrate holding means. A resist stripping apparatus including:

In the substrate processing apparatus having such a configuration, the invention of claim 1 can be implemented, and the effects described in relation to claim 1 can be achieved.
The invention according to claim 5 is a resist stripping device for stripping a resist formed on the surface of a substrate (W) using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide. A substrate holding means (1) for holding the substrate in a posture with its surface facing upward, and a resist stripping solution supply means for supplying the resist stripping solution to the surface of the substrate held by the substrate holding means Liquid supply means (2, 22; 3, 32; 4, 42) for supplying any one liquid of sulfuric acid, hydrogen peroxide solution and pure water to the surface of the substrate held by the substrate holding means. ), A wetting control means (5) for controlling the liquid supply means to wet the surface of the substrate held by the substrate holding means with the liquid, and following the control by the wetting control means, the resist stripping solution Control supply means And a liquid film formation control means (5) for forming a liquid film by depositing the resist peeling liquid on the surface of the substrate held by the substrate holding means. .

In the substrate processing apparatus having such a configuration, the invention of claim 2 can be implemented, and the effects described in relation to claim 2 can be achieved.
According to a sixth aspect of the present invention, there is provided a substrate rotating means (14) for rotating the substrate held by the substrate holding means about an axis intersecting the surface thereof, and the substrate rotating means at the time of control by the wetting control means. The resist stripping apparatus according to claim 4, further comprising high-speed rotation control means (5) that controls the rotation of the substrate held by the substrate holding means at a predetermined high rotation speed. is there.

  In the substrate processing apparatus having such a configuration, the invention of claim 3 can be implemented, and the effects described in relation to claim 3 can be obtained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing the configuration of a resist stripping apparatus according to an embodiment of the present invention. This resist stripping apparatus is a single wafer type that performs resist stripping processing for stripping and removing unnecessary resist from the surface of a semiconductor wafer W (hereinafter simply referred to as “wafer W”) which is an example of a substrate. A spin chuck 1 which is an apparatus and rotates while holding the wafer W substantially horizontally, and a sulfuric acid nozzle for supplying sulfuric acid (H ₂ SO ₄ ) to the surface (upper surface) of the wafer W held by the spin chuck 1 2, a hydrogen peroxide solution nozzle 3 for supplying hydrogen peroxide solution (H ₂ O ₂ ) to the surface of the wafer W held on the spin chuck 1, and a surface of the wafer W held on the spin chuck 1. And a DIW nozzle 4 for supplying DIW (deionized pure water).

The spin chuck 1 includes, for example, a spin shaft 11 that extends substantially vertically, a spin base 12 that is mounted substantially horizontally on the upper end of the spin shaft 11, and a plurality of clamps that are erected on the upper surface of the spin base 12. The thing of the structure containing the member 13 is employ | adopted.
The plurality of clamping members 13 are arranged on the circumference corresponding to the outer shape of the wafer W so as to be spaced apart from each other. By clamping the end surfaces of the wafer W at a plurality of different positions, the wafer W is substantially It can be held in a horizontal position. The plurality of clamping members 13 are arranged on a circumference centered on the central axis of the spin shaft 11. When the wafer W is held by the plurality of clamping members 13, the center of the wafer W spins. It is located on the central axis of the shaft 11.

  A rotation drive mechanism 14 including a drive source such as a motor is coupled to the spin shaft 11. By inputting a rotational force to the spin shaft 11 from the rotational drive mechanism 14, the spin shaft 11 can be rotated about its central axis. Therefore, when the wafer W is held by the plurality of clamping members 13, a rotational force is input from the rotation drive mechanism 14 to the spin shaft 11, so that the wafer W is rotated around the central axis of the spin shaft 11 together with the spin base 12. Can be rotated.

The spin chuck 1 is not limited to such a configuration. For example, the non-device surface of the wafer W is vacuum-sucked to hold the wafer W in a horizontal posture, and in that state, a vertical axis A vacuum chucking type (vacuum chuck) that can rotate the held wafer W by rotating around may be employed.
A sulfuric acid supply pipe 21 that supplies sulfuric acid from a sulfuric acid supply source is connected to the sulfuric acid nozzle 2. A sulfuric acid valve 22 for opening and closing the sulfuric acid supply pipe 21 is interposed in the middle of the sulfuric acid supply pipe 21, and when the sulfuric acid valve 22 is opened, the sulfuric acid supplied from the sulfuric acid supply pipe 21 is passed through the sulfuric acid nozzle. 2 and the sulfuric acid valve 22 is closed, the discharge of sulfuric acid from the sulfuric acid nozzle 2 is stopped. The sulfuric acid discharged from the sulfuric acid nozzle 2 is supplied to the vicinity of the center of rotation on the surface of the wafer W, for example, in a continuous flow state (a state in which the liquid flow of sulfuric acid forms a column).

  A hydrogen peroxide solution supply pipe 31 that supplies hydrogen peroxide solution from a hydrogen peroxide solution supply source is connected to the hydrogen peroxide solution nozzle 3. In the middle of the hydrogen peroxide solution supply pipe 31, a hydrogen peroxide solution valve 32 for opening and closing the hydrogen peroxide solution supply tube 31 is provided. When the hydrogen peroxide solution supplied from the hydrogen oxide water supply pipe 31 is discharged from the hydrogen peroxide solution nozzle 3 and the hydrogen peroxide solution valve 32 is closed, the hydrogen peroxide solution is discharged from the hydrogen peroxide solution nozzle 3. Stopped. The hydrogen peroxide solution nozzle 3 is a flat nozzle (fan nozzle) that sprays hydrogen peroxide solution in a fan shape and supplies the atomized hydrogen peroxide solution to a slit-shaped area on the surface of the wafer W. Alternatively, a cone nozzle that sprays the hydrogen peroxide solution in a cone shape (conical shape) and supplies the atomized hydrogen peroxide solution to a circular range on the surface of the wafer W may be used.

  A DIW supply pipe 41 that supplies DIW from a DIW supply source is connected to the DIW nozzle 4. A DIW valve 42 for opening and closing the DIW supply pipe 41 is interposed in the middle part of the DIW supply pipe 41. When the DIW valve 42 is opened, DIW supplied from the DIW supply pipe 41 becomes DIW nozzle 4. When the DIW valve 42 is closed, the DIW discharge from the DIW nozzle 4 is stopped. The DIW nozzle 4 may be a capillary nozzle that supplies DIW to the vicinity of the rotation center of the surface of the wafer W in a columnar continuous flow state, or DIW is sprayed in a fan shape and the mist-like DIW is supplied to the wafer W. It may be a flat nozzle (fan-shaped nozzle) that supplies a slit-shaped area on the surface of the wafer, or DIW is sprayed in a cone shape (conical shape), and the mist-shaped DIW is circled on the surface of the wafer W. It may be a cone nozzle that supplies a range of shapes.

The resist stripping apparatus further includes a control unit 5 having a configuration including a microcomputer. The controller 5 controls the operation of the rotation drive mechanism 14 and controls the opening and closing of the sulfuric acid valve 22, the hydrogen peroxide solution valve 32, and the DIW valve 42, respectively.
FIG. 2 is a flowchart for explaining the resist stripping process. The wafer W to be processed is carried in by a transfer robot (not shown), and is held by the spin chuck 1 with the surface, which is a device formation surface, facing upward.

  In the resist stripping process, first, the rotation drive mechanism 14 is controlled to rotate the wafer W held on the spin chuck 1 at a predetermined high rotation speed (for example, 3000 rpm). On the other hand, the hydrogen peroxide valve 32 is opened, and the hydrogen peroxide solution is supplied from the hydrogen peroxide solution nozzle 3 to the surface of the wafer W rotating at high speed (step S1). The hydrogen peroxide solution supplied to the surface of the wafer W receives a large centrifugal force due to the high-speed rotation of the wafer W, and a relatively strong liquid flow is generated on the surface of the wafer W from the supply position toward the periphery of the wafer W. It flows. Thereby, even if a lattice-like pattern is formed on the surface of the wafer W, the hydrogen peroxide solution supplied to the surface of the wafer W spreads over the entire surface of the wafer W with almost no influence of the pattern. . As a result, the entire surface of the wafer W is wetted by the hydrogen peroxide solution.

  When the hydrogen peroxide solution is supplied for a predetermined prewetting time, the hydrogen peroxide solution valve 32 is closed, and the supply of the hydrogen peroxide solution from the hydrogen peroxide solution nozzle 3 to the surface of the wafer W is stopped. The Further, the rotation drive mechanism 14 is controlled, and the rotation speed of the wafer W by the spin chuck 1 is reduced from a high rotation speed to a predetermined low rotation speed (for example, 10 rpm).

  When the rotation speed of the wafer W becomes a low rotation speed, the sulfuric acid valve 22 is then opened, and sulfuric acid is discharged from the sulfuric acid nozzle 2 toward the vicinity of the rotation center of the surface of the wafer W rotating at a low speed (step S1). ). The sulfuric acid supplied to the surface of the wafer W spreads on the surface of the wafer W and is stored as a liquid film on the surface of the wafer W by the surface tension. That is, sulfuric acid is accumulated on the surface of the wafer W, and a liquid film of sulfuric acid is formed on the surface of the wafer W. Prior to the formation of the liquid film, since the entire surface of the wafer W is wetted with hydrogen peroxide solution, the sulfuric acid supplied to the surface of the wafer W can be used regardless of the hydrophobicity of the resist. Even if a pattern is formed on the surface of the wafer W, the surface of the wafer W expands concentrically around the supply position without being affected by the pattern. As a result, a liquid film of sulfuric acid having a substantially uniform film thickness is uniformly formed on the entire surface of the wafer W.

When the supply of sulfuric acid is performed for a predetermined sulfuric acid paddle time, the sulfuric acid valve 22 is closed, and the supply of sulfuric acid from the sulfuric acid nozzle 2 to the surface of the wafer W is stopped. Then, the substrate is left for several seconds (for example, 2 to 3 seconds) in a state where a liquid film of sulfuric acid is formed on the surface of the wafer W. Thereafter, the hydrogen peroxide solution valve 32 is opened, and the hydrogen peroxide solution is supplied from the hydrogen peroxide solution nozzle 3 to the surface of the wafer W rotating at a low speed (step S3). The hydrogen peroxide solution from the hydrogen peroxide solution nozzle 3 penetrates into the sulfuric acid liquid film formed on the surface of the wafer W. As a result, on the surface of the wafer W, a chemical reaction (H ₂ SO ₄ + H ₂ O ₂ → H ₂ SO ₅ + H ₂ O) occurs between the sulfuric acid and the hydrogen peroxide solution over the entire area, thereby providing a strong oxidizing power. SPM (sulfuric acid / hydrogen peroxide mixture) containing H ₂ SO ₅ is generated. At this time, heat (reaction generation heat) is generated due to a chemical reaction, and the SPM generated on the surface of the wafer W by this reaction generation heat can satisfactorily peel off the resist formed on the surface of the wafer W. A high temperature of about 100 ° C. or higher is reached.

  The hydrogen peroxide solution is supplied over a predetermined hydrogen peroxide solution supply time (for example, 15 seconds). Then, after the supply of hydrogen peroxide solution is stopped, the state is kept as it is (the wafer W is stationary and the liquid film of SPM is formed on the surface of the wafer W), and a predetermined time (for example, 30 to 30). 120 seconds). Oxidation by SPM as a resist stripping solution in which the resist film formed on the surface of the wafer W is heated to a high temperature of about 100 ° C. or higher during the period in which the hydrogen peroxide solution is supplied and the period in which the hydrogen peroxide solution is left. Is peeled off from the surface of the wafer W and removed.

  Thereafter, the rotation speed of the wafer W by the spin chuck 1 is increased to a predetermined rinse rotation speed (for example, 300 to 1500 rpm). Thereafter, the DIW valve 42 is opened, and DIW is supplied from the DIW nozzle 4 to the surface of the wafer W (step S4). The DIW supplied to the surface of the wafer W is guided from the supply position to the outer side in the rotational radial direction of the wafer W by the centrifugal force received as the wafer W rotates. It flows from the supply position toward the periphery of the wafer W. As a result, DIW spreads over the entire surface of the wafer W, and the SPM adhering to the surface of the wafer W is washed away by the DIW.

  When the DIW is supplied for a predetermined rinse time (for example, 30 seconds), the rotation speed of the wafer W is increased to a predetermined spin dry speed (for example, 3000 rpm), and the DIW adhering to the wafer W is shaken off. A spin dry process for drying is performed (step S5). This spin dry process is performed over a predetermined spin dry time (for example, 30 seconds). After the spin dry process, the rotation speed of the wafer W is reduced, and when the wafer W is stationary, the processed wafer W is unloaded from the spin chuck 1 by a transfer robot (not shown).

  As described above, according to this embodiment, prior to the step of forming the sulfuric acid liquid film on the surface of the wafer W, the wafer W is rotated at a high speed and the surface of the wafer W rotating at a high speed is oxidized. By supplying the hydrogen water, the entire surface of the wafer W is wetted by the hydrogen peroxide solution. Thus, in the step of forming the sulfuric acid liquid film, the sulfuric acid supplied to the surface of the wafer W is not affected by the hydrophobicity of the resist and the pattern formed on the surface of the wafer W. The top expands concentrically around the supply position. For this reason, a liquid film of sulfuric acid having a substantially uniform film thickness is uniformly formed over the entire surface of the wafer W. Therefore, by forming a sulfuric acid liquid film and supplying hydrogen peroxide to the surface of the wafer W, SPM can be generated over the entire surface of the wafer W, and the SPM forms on the surface of the wafer W. It can be removed cleanly without leaving the resist.

  Although one embodiment of the present invention has been described above, the present invention can be implemented in other forms. For example, in the above embodiment, an example is given in which the surface of the wafer W is wetted with hydrogen peroxide before forming a liquid film of sulfuric acid on the surface of the wafer W. Wetting of the surface may be achieved by supplying DIW from the DIW nozzle 4 to the surface of the wafer W. In other words, before forming a liquid film with sulfuric acid on the surface of the wafer W, DIW may be supplied from the DIW nozzle 4 to the surface of the wafer W, and the surface of the wafer W may be wetted by DIW.

  Further, in the above embodiment, hydrogen peroxide solution is supplied to the sulfuric acid liquid film formed on the surface of the wafer W, and the sulfuric acid and the hydrogen peroxide solution are reacted on the surface of the wafer W. In this example, the SPM (resist stripping solution) is generated. However, an SPM nozzle is provided above the spin chuck 1, and sulfuric acid, hydrogen peroxide solution, and the like are provided from the SPM nozzle to the center of the surface of the wafer W. SPM generated by premixing may be supplied. In this case, a nozzle for supplying sulfuric acid, hydrogen peroxide solution, or DIW is provided on the surface of the wafer W, and any of sulfuric acid, hydrogen peroxide solution, and DIW is formed on the surface of the wafer W prior to the formation of the SPM liquid film. By supplying such a liquid and making the surface of the wafer W wet with the liquid, the SPM supplied from the SPM nozzle to the surface of the wafer W can be uniformly distributed over the entire surface of the wafer W. In addition, a resist remover liquid film having a substantially uniform film thickness can be formed over the entire surface of the wafer W. Therefore, it can be peeled cleanly without leaving the resist formed on the surface of the wafer W.

Further, for example, the wafer W is taken up as an example of a substrate to be processed. However, the present invention is not limited to the wafer W, but a glass substrate for a liquid crystal display device, a glass substrate for a plasma display panel, a glass substrate for a photomask, and a magnetic / optical disk. Other types of substrates, such as substrates, may be processed.
In addition, various design changes can be made within the scope of matters described in the claims.

1 is a diagram schematically showing a configuration of a resist stripping apparatus according to an embodiment of the present invention. It is a flowchart for demonstrating a resist peeling process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Spin chuck 2 Sulfuric acid nozzle 3 Hydrogen peroxide water nozzle 4 DIW nozzle 5 Control part 14 Rotation drive mechanism 22 Sulfuric acid valve 32 Hydrogen peroxide water valve 42 DIW valve W Semiconductor wafer

Claims (6)

A method for stripping a resist formed on the surface of a substrate using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide water,
A liquid film forming step of supplying sulfuric acid to the surface of the substrate to be processed, and forming a liquid film by accumulation of sulfuric acid on the surface of the substrate;
Subsequent to this liquid film formation step, by supplying hydrogen peroxide solution to the surface of the substrate on which the liquid film is formed by the accumulation of sulfuric acid, sulfuric acid and hydrogen peroxide solution are mixed on the surface of the substrate. A resist stripping solution generating step for generating a resist stripping solution;
Prior to the liquid film forming step, supplying a hydrogen peroxide solution or pure water to the surface of the substrate to be processed, and a wetting step of wetting the surface of the substrate with the hydrogen peroxide solution or pure water. A resist stripping method. A method for stripping a resist formed on the surface of a substrate using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide water,
A liquid film forming step of supplying the resist stripping solution to the surface of the substrate to be processed, and forming a liquid film on the surface of the substrate by the liquid buildup of the resist stripping solution;
Prior to this liquid film forming step, a wet liquid is supplied by supplying any one liquid of sulfuric acid, hydrogen peroxide water and pure water to the surface of the substrate to be processed, and wets the surface of the substrate with the liquid. And a step of removing the resist.   3. The resist stripping method according to claim 1, wherein, in the wetting step, the substrate to be processed is rotated at a predetermined high rotation speed around an axis intersecting the surface thereof. A resist stripping device for stripping a resist formed on the surface of a substrate using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide water,
Substrate holding means for holding the substrate in a posture with its surface facing upward;
Sulfuric acid supply means for supplying sulfuric acid to the surface of the substrate held by the substrate holding means;
Hydrogen peroxide solution supply means for supplying hydrogen peroxide solution to the surface of the substrate held by the substrate holding means;
Pure water supply means for supplying pure water to the surface of the substrate held by the substrate holding means;
Wetting control means for controlling the hydrogen peroxide water supply means or pure water supply means to wet the surface of the substrate held by the substrate holding means with hydrogen peroxide water or pure water;
Subsequent to the control by the wetness control means, the sulfuric acid supply means is controlled to include a liquid film formation control means for forming a liquid film by accumulation of sulfuric acid on the surface of the substrate held by the substrate holding means. A resist stripping apparatus. A resist stripping device for stripping a resist formed on the surface of a substrate using a resist stripping solution produced by mixing sulfuric acid and hydrogen peroxide water,
Substrate holding means for holding the substrate in a posture with its surface facing upward;
A resist stripper supply means for supplying the resist stripper to the surface of the substrate held by the substrate holder;
Liquid supply means for supplying any one liquid of sulfuric acid, hydrogen peroxide water and pure water to the surface of the substrate held by the substrate holding means;
Wetting control means for controlling the liquid supply means to wet the surface of the substrate held by the substrate holding means with liquid;
Subsequent to the control by the wetting control unit, the resist stripping solution supply unit is controlled to form a liquid film by depositing the resist stripping solution on the surface of the substrate held by the substrate holding unit. And a control means. A substrate rotating means for rotating the substrate held by the substrate holding means about an axis intersecting the surface thereof;
The high-speed rotation control means for controlling the substrate rotation means to rotate the substrate held by the substrate holding means at a predetermined high rotation speed at the time of control by the wetness control means. 4. The resist stripping apparatus according to 4 or 5.

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