JP2008235342A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of executing high-temperature processing and rotation processing for a substrate. <P>SOLUTION: In SPM (sulfuric acid hydrogen peroxide mixture) processing using SPM of about 200°C, a wafer W is held in a substrate lower part holding section 2. Since the substrate lower part holding section 2 supports the lower surface of the wafer W, it can be free from application of a force not less than the weight of the wafer W. In SC1 processing or spin-dry processing, the wafer W is held in a substrate upper portion holding section 3. Since the SC1 processing and spin-dry processing are executed in an environment with a temperature lower than that in the SPM processing, the deformation of the substrate upper part holding section 3 can be prevented even if the wafer W is firmly held by the substrate upper part holding section 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method used for removing unnecessary resist from the surface of a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, glass substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, A photomask substrate or the like is included.

  The manufacturing process of a semiconductor device includes, for example, a step of locally implanting impurities (ions) such as phosphorus, arsenic, and boron into the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”). In this step, in order to prevent ion implantation to an undesired portion, a resist made of a photosensitive resin is patterned on the surface of the wafer, and a portion not desired for ion implantation is masked by the resist. Since the resist patterned on the surface of the wafer becomes unnecessary after the ion implantation, a resist removal process for removing the unnecessary resist on the surface of the wafer is performed after the ion implantation.

  As a method of this processing, there are a batch type in which a plurality of wafers are processed at once and a single wafer type in which wafers are processed one by one. Conventionally, the batch type has been the mainstream, but since the batch type requires a large processing tank capable of accommodating a plurality of wafers, recently, wafers to be processed have become larger. Thus, a single-wafer type that does not require such a large treatment tank has attracted attention.

A single-wafer type substrate processing apparatus for performing resist removal processing includes, for example, a spin chuck for rotating a wafer while holding the wafer substantially horizontal. A typical example of this spin chuck is an end surface holding type spin chuck in which a chuck pin made of resin is brought into contact with an end surface of a substrate to hold a wafer.
On the other hand, in the resist removal process, SPM (sulfuric acid / hydrogen peroxide mixture) is supplied to the surface of the wafer held and rotated by the spin chuck. The SPM supplied to the surface of the wafer spreads over the entire surface under the centrifugal force of the wafer. The resist is peeled off from the wafer surface by the strong oxidizing power of peroxo-sulfuric acid (H ₂ SO ₅ ) contained in the SPM. After the supply of the SPM is completed, the rinse liquid is supplied to the surface of the rotating wafer, and the SPM adhering to the surface of the wafer is washed away. Thereafter, spin drying is performed in which the wafer is rotated at a rotation speed at which the rinse liquid droplets on the surface of the wafer are spun off.
JP 2005-32819 A

In order to sufficiently exhibit the resist stripping ability of SPM, it is desirable that the SPM supplied to the surface of the wafer is at a high temperature (about 170 ° C. or higher).
However, if the high temperature SPM is supplied to the surface of the wafer, the high temperature may cause deformation of the chuck pins that firmly hold the wafer. When the chuck pins are deformed, the substrate cannot be stably held, so that it is not possible to execute a rotation process such as spin drying that rotates the wafer at a relatively high speed.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of performing high temperature processing and rotation processing on a substrate.

  In order to achieve the above object, the invention according to claim 1 is characterized in that a substrate (W) is processed using a fluid having a temperature higher than room temperature, and the substrate is rotated in a lower temperature environment than during the high temperature processing. A substrate processing apparatus for performing rotation processing to be processed, the substrate holding means (2) for supporting the lower surface of the substrate and holding the substrate during the high temperature processing, and the substrate during the rotation processing The substrate processing apparatus includes a rotation processing substrate holding means (3) for rotating the substrate while holding the substrate.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, at the time of high temperature processing, the substrate is held by the high temperature processing substrate holding means. Since the high temperature processing substrate holding means supports the lower surface of the substrate, it does not receive a force exceeding the weight of the substrate. Therefore, even when the high temperature processing is executed, the high temperature processing substrate holding means does not cause deformation and can keep holding the substrate stably. On the other hand, during the rotation processing, the substrate is held by the rotation processing substrate holding means. Since the rotation process is performed in a lower temperature environment than during the high temperature process, even if the substrate is held firmly by the rotation process substrate holding unit, the rotation process substrate holding unit is not deformed. Accordingly, the rotation processing substrate holding means can rotate the substrate at a relatively high speed while firmly holding the substrate. Therefore, high-temperature processing and rotation processing can be performed on the substrate.

According to a second aspect of the present invention, the rotation processing substrate holding means is disposed so as to face the upper side of the high temperature processing substrate holding means, and is spaced apart from the high temperature processing substrate holding means. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided so as to be movable up and down to a proximity position where the substrate can be delivered to and from the high temperature processing substrate holding means.
According to this configuration, the rotation processing substrate holding means can be moved up and down to a separation position spaced upward from the high temperature processing substrate holding means and a close position where the substrate can be delivered between the high temperature processing substrate holding means. Is provided. As a result, during high temperature processing, the rotation processing substrate holding means is arranged at a separate position so that the rotation processing substrate holding means interferes with the processing operation, or the rotation processing substrate holding means is affected by a high temperature fluid. Can be prevented. Further, the rotation processing substrate holding means can be disposed in the proximity position so that the substrate can be transferred between the high temperature processing substrate holding means and the rotation processing substrate holding means.

According to a third aspect of the present invention, the rotation processing substrate holding means is disposed on a plate-like base (40) having a substrate facing surface (39) facing the upper surface of the substrate, and the substrate facing surface of the base. The substrate processing apparatus according to claim 2, further comprising a plurality of clamping members (37) for contacting the peripheral edge of the substrate and clamping the substrate.
According to this configuration, the rotation processing substrate holding means can firmly hold the substrate by the plurality of holding members holding the substrate. Therefore, the rotation processing substrate holding means can rotate the substrate at a relatively high speed during the rotation processing. For example, it is possible to execute spin drying in which the substrate is rotated at a rotation speed at which droplets on the surface of the substrate are shaken off.

The invention according to claim 4 is characterized in that the high temperature treatment is a treatment for removing the resist from the upper surface of the substrate using a mixed solution of sulfuric acid and hydrogen peroxide solution. A substrate processing apparatus according to claim 1.
In this configuration, the resist is removed from the upper surface of the substrate using a mixed solution of sulfuric acid and hydrogen peroxide solution (hereinafter referred to as sulfuric acid hydrogen peroxide solution). The sulfuric acid hydrogen peroxide solution improves the resist stripping ability as the liquid temperature increases. For this reason, by supplying high-temperature (about 170 ° C. or higher) sulfuric acid hydrogen peroxide solution to the upper surface of the substrate, the resist formed on the upper surface can be satisfactorily removed.

According to a fifth aspect of the present invention, there is provided a sulfuric acid nozzle (16) for discharging sulfuric acid toward an upper surface of a substrate held by the high temperature processing substrate holding means, and a substrate held by the high temperature processing substrate holding means. The substrate processing apparatus according to claim 4, further comprising an overwater nozzle (17) for discharging hydrogen peroxide solution toward the upper surface.
According to this configuration, the sulfuric acid discharged from the sulfuric acid nozzle and the hydrogen peroxide solution discharged from the super-water nozzle are mixed on the upper surface of the substrate to generate the sulfuric acid hydrogen peroxide solution. The sulfuric acid hydrogen peroxide solution improves the resist stripping ability as the liquid temperature increases. On the other hand, as the liquid temperature of the sulfuric acid hydrogen peroxide solution increases, the rate of deterioration due to the decay of peroxosulfuric acid contained in the sulfuric acid hydrogen peroxide solution increases. For this reason, for example, in a configuration in which sulfuric acid and hydrogen peroxide solution are mixed on the upstream side of the nozzle to generate sulfuric acid hydrogen peroxide solution, and high temperature sulfuric acid hydrogen peroxide solution of about 200 ° C. is discharged from the nozzle. When the sulfuric acid hydrogen peroxide solution reaches the surface of the substrate, the sulfuric acid hydrogen peroxide solution may be deteriorated to a state that does not contain sufficient peroxo-sulfuric acid. In this case, the resist formed on the upper surface of the substrate cannot be removed well.

On the other hand, in the configuration in which sulfuric acid and hydrogen peroxide solution are mixed on the upper surface of the substrate to generate sulfuric acid hydrogen peroxide solution, even if the liquid temperature is high, the sulfuric acid hydrogen peroxide solution is It acts on the resist formed on the upper surface of the substrate. As a result, the resist formed on the upper surface of the substrate can be removed satisfactorily.
The invention according to claim 6 is characterized in that the discharge direction of the hydrogen peroxide solution discharged from the super-water nozzle has a larger inclination angle with respect to the vertical direction than the discharge direction of sulfuric acid discharged from the sulfuric acid nozzle. The substrate processing apparatus according to claim 5.

  In this configuration, the hydrogen peroxide solution discharged from the overwater nozzle can be made to enter under the sulfuric acid discharged from the sulfuric acid nozzle on the upper surface of the substrate. Therefore, for example, when the discharge amount of hydrogen peroxide water from the overwater nozzle is smaller than the discharge amount of sulfuric acid from the sulfuric acid nozzle, a small amount of hydrogen peroxide solution can be brought into good contact with a large amount of sulfuric acid, Sulfuric acid and hydrogen peroxide water can be generated efficiently.

  The invention according to claim 7 is a sulfuric acid valve (24) for switching discharge and discharge stop of sulfuric acid from the sulfuric acid nozzle, and an excessive flow for switching discharge and discharge stop of hydrogen peroxide water from the superwater nozzle. It further includes a water valve (26), and a control means (53) for controlling the sulfuric acid valve and the overwater valve to alternately and repeatedly discharge sulfuric acid and hydrogen peroxide solution. A substrate processing apparatus according to claim 5 or 6.

  According to this configuration, hydrogen peroxide solution and sulfuric acid are alternately and repeatedly supplied onto the upper surface of the substrate. As a result, sulfuric acid is supplied to the liquid film in a state in which a hydrogen peroxide solution is formed on the upper surface of the substrate, and in the state in which a sulfuric acid liquid film is formed on the upper surface of the substrate. Hydrogen peroxide water is supplied to the liquid film. Therefore, the hydrogen peroxide solution and sulfuric acid can be reliably mixed on the upper surface of the substrate. As a result, the sulfuric acid hydrogen peroxide solution can be generated efficiently.

  The invention according to claim 8 is a substrate comprising a high temperature processing substrate holding means (2) for supporting the lower surface of the substrate and holding the substrate, and a rotation processing substrate holding means (3) for rotating while holding the substrate. A substrate processing method executed in a processing apparatus, wherein a high-temperature processing step (S1) is performed on a substrate (W) held by the high-temperature processing substrate holding means using a fluid having a temperature higher than normal temperature. ), A step of transferring the substrate between the high temperature processing substrate holding means and the rotation processing substrate holding means (S4), and the rotation processing substrate in an environment at a lower temperature than during the high temperature processing step. The substrate processing method includes a rotation processing step (S5, S6, S7) for executing a rotation processing for rotating the substrate by the holding means.

According to this method, the same effect as that of the first aspect can be obtained.
The invention according to claim 9 is characterized in that the high temperature treatment step includes a sulfuric acid discharge step of discharging sulfuric acid toward the upper surface of the substrate, and an overwater discharge step of discharging hydrogen peroxide solution toward the upper surface of the substrate, 9. The substrate processing method according to claim 8, wherein the sulfuric acid discharge step and the excessive water discharge step are alternately and repeatedly executed.

  According to this method, the same effect as that of the seventh aspect can be obtained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is a single wafer type apparatus used for processing for removing unnecessary resist from the surface of the wafer W after ion implantation processing for injecting impurities into the surface of the wafer W as an example of the substrate. It is.

In the processing chamber 1, a lower substrate holding unit 2 for holding the wafer W from below, and an upper substrate holding unit 3 arranged above the lower substrate holding unit 2 for holding the wafer W from above. SPM for supplying SPM prepared by mixing sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide solution (H ₂ O ₂ ) with respect to the surface of the wafer W held by the lower substrate holding unit 2. Nozzle unit 5, ultrasonic sulfuric acid nozzle 6 for supplying sulfuric acid with ultrasonic vibration applied to the surface of wafer W, and DIW (deionized pure water) toward the center of wafer W And a DIW nozzle 34 for discharging the liquid.

The lower substrate holding unit 2 includes a plate 4 for supporting the back surface of the wafer W (the surface opposite to the surface on which the resist is formed).
FIG. 2 is a plan view of the plate 4. For example, the plate 4 is formed in a disk shape larger in diameter than the wafer W, and is disposed substantially horizontally. The wafer W can be placed on the upper surface of the plate 4 and the wafer W can be held with the surface facing upward. On the upper surface of the plate 4, as shown in FIG. 2, a ring-shaped contact member 7 is disposed at a position slightly inward from the peripheral edge of the plate 4. The contact member 7 is made of, for example, resin, and the surface thereof is subjected to fluororesin processing. When the wafer W is placed on the upper surface of the plate 4, the lower surface (back surface) of the wafer W comes into contact with the upper portion of the contact member 7, and the frictional force generated between the upper portion of the contact member 7 and the lower surface of the wafer W is caused. The wafer W is held by the lower substrate holder 2. On the periphery of the upper surface of the plate 4, a plurality of arcuate (for example, six in FIG. 2) guides 8 along the periphery of the wafer W are arranged at substantially equal angular intervals. These guides 8 regulate the horizontal movement of the wafer W placed on the upper surface of the plate 4.

  Referring to FIG. 1, a rotating shaft 10 extending in the vertical direction is coupled to the lower surface of plate 4. A rotational force is input to the rotary shaft 10 from a plate rotation drive mechanism 11 including a motor and the like. The wafer W can be rotated around the vertical axis together with the plate 4 by inputting a rotational force from the plate rotation drive mechanism 11 to the rotary shaft 10 while the wafer W is held on the upper surface of the plate 4.

  Thus, the wafer W is held on the plate 4 by the frictional force generated between the back surface of the wafer W and the upper portion of the contact member 7. For this reason, the contact member 7 does not receive a force larger than the weight of the wafer W. Therefore, even if the wafer W is held in a high temperature environment of about 200 ° C., for example, the contact member 7 does not have a problem such as deformation. Thereby, the lower substrate holder 2 can stably hold the wafer W even in a high temperature environment.

  The rotating shaft 10 is a hollow shaft, and a lower surface supply pipe 12 is inserted into the rotating shaft 10. Room temperature SC1 (ammonia hydrogen peroxide solution) and room temperature DIW (deionized pure water) are supplied to the lower surface supply pipe 12 via an ammonia overwater lower valve 13 and a DIW lower valve 14, respectively. It is like that. The lower surface supply pipe 12 extends to a position close to the wafer W held by the lower substrate holding unit 2, and SC1 and DIW are selectively directed toward the center of the lower surface (back surface) of the wafer W at the front end. A lower surface nozzle 15 for discharging the ink is formed.

The on-substrate holding unit 3 includes a spin base 40 facing the plate 4 above the plate 4. The spin base 40 has a disk shape larger in diameter than the wafer W.
The spin base 40 is disposed with the substrate facing surface 39 facing the upper surface of the plate 4 facing downward. A plurality of (for example, six) pinching pins 37 for holding the wafer W in contact with the end surface of the wafer W are arranged at equiangular intervals on the peripheral portion of the substrate facing surface 39 of the spin base 40. ing. These pinching pins 37 are provided at positions not facing the guide 8 so that the spin base 40 does not come into contact with the guide 8 provided at the peripheral edge of the plate 4 at a proximity position described later.

  A plurality of clamping pins 37 are coupled to a clamping pin drive mechanism 38. The clamping pin drive mechanism 38 has a clamping position in which the plurality of clamping pins 37 can be brought into contact with the end surface of the wafer W to clamp the wafer W, and an opening position radially outward of the wafer W from the clamping position. Can be led to. The wafer W is held by the plurality of holding pins 37 while the substrate facing surface 39 of the spin base 40 is opposed to the upper surface of the wafer W, whereby the wafer W is firmly held by the on-substrate holding unit 3. For this reason, the substrate holding unit 3 can rotate the wafer W at a maximum rotation speed of 2500 rpm while holding the wafer W.

  On the upper surface of the spin base 40, a spin shaft 41 is fixed along an axis common to the rotary shaft 10 attached to the plate 4. The spin shaft 41 is attached in a state where it is suspended from the vicinity of the tip of a spin base arm 47 that extends substantially horizontally. In relation to the spin base arm 47, the spin base 40 is moved up and down between a retracted position where the spin base 40 is largely retracted above the plate 4 and a close position where the wafer W can be delivered to and from the plate 4. The spin base lifting / lowering drive mechanism 48 is provided. Further, a spin base rotation drive mechanism 49 for rotating the spin base 40 around the spin axis 41 is provided in association with the spin base arm 47.

  The spin shaft 41 is formed hollow, and an upper surface nozzle 42 that selectively discharges SC1 and DIW toward the center of the upper surface of the wafer W held by the on-substrate holding unit 3 inside the spin shaft 41. Is formed. The upper surface nozzle 42 is supplied with SC1 at room temperature and DIW at room temperature via an ammonia overwater valve 43 and a DIW valve 44.

Further, an N ₂ flow passage 45 for supplying N ₂ gas as an inert gas toward the central portion of the wafer W is formed between the inner wall surface of the spin shaft 41 and the outer wall surface of the upper surface nozzle 42. Yes. The N ₂ flow passage 45 is supplied with N ₂ gas at room temperature via an N ₂ upper valve 46.
The ultrasonic sulfuric acid nozzle 6 is attached to the tip of an ultrasonic sulfuric acid arm 27 extending substantially horizontally above the plate 4. The ultrasonic sulfuric acid arm 27 is supported by an ultrasonic sulfuric acid arm support shaft 28 extending substantially vertically on the side of the plate 4. An ultrasonic sulfuric acid nozzle drive mechanism 29 is coupled to the ultrasonic sulfuric acid arm support shaft 28, and the ultrasonic sulfuric acid arm support shaft 28 is rotated by the driving force of the ultrasonic sulfuric acid nozzle drive mechanism 29. Thus, the ultrasonic sulfuric acid arm 27 can be swung.

  The ultrasonic sulfuric acid nozzle 6 is connected to a first sulfuric acid supply pipe 30 to which high concentration (for example, 98 wt%) sulfuric acid from a sulfuric acid supply source is supplied. A sulfuric acid valve 31 for an ultrasonic sulfuric acid nozzle for switching between supply and stoppage of sulfuric acid to the ultrasonic sulfuric acid nozzle 6 is interposed in the middle of the first sulfuric acid supply pipe 30. The sulfuric acid supplied to the first sulfuric acid supply pipe 30 has a liquid temperature of about room temperature (about 25 ° C.) in the sulfuric acid supply source.

  Furthermore, an ultrasonic vibrator 32 that receives an oscillation signal from an ultrasonic vibration oscillator 54 (see FIG. 2) and vibrates at a predetermined frequency (for example, 40 to 750 kHz) is incorporated in the ultrasonic sulfuric acid nozzle 6. Yes. In the state where sulfuric acid is supplied from the first sulfuric acid supply pipe 30 to the ultrasonic sulfuric acid nozzle 6, the ultrasonic vibrator 32 is vibrated to impart ultrasonic vibration to the sulfuric acid supplied to the ultrasonic sulfuric acid nozzle 6. be able to. Thereby, sulfuric acid to which ultrasonic waves are applied can be discharged from the ultrasonic sulfuric acid nozzle 6.

  The DIW nozzle 34 is disposed obliquely above the plate 4 with the discharge port directed toward the center of the wafer W. A DIW supply pipe 35 is connected to the DIW nozzle 34, and DIW as a rinsing liquid from a DIW supply source is supplied through the DIW supply pipe 35. In the middle of the DIW supply pipe 35, a DIW valve for DIW nozzle 36 for switching the supply and stop of supply of DIW to the DIW nozzle 34 is interposed.

The SPM nozzle unit 5 includes a sulfuric acid nozzle 16 for supplying sulfuric acid to the upper surface of the wafer W held by the lower substrate holder 2, and an upper surface of the wafer W held by the lower substrate holder 2. A hydrogen peroxide solution 17 for supplying hydrogen peroxide water, an N ₂ nozzle 18 for spraying N ₂ against the hydrogen peroxide solution discharged from the hydrogen peroxide nozzle 17, the sulfuric acid nozzle 16, A block 19 that holds the nozzle 17 and the N ₂ nozzle 18 from above is provided.

  The SPM nozzle unit 5 is attached to the tip of an SPM arm 20 that extends substantially horizontally above the plate 4. The SPM arm 20 is supported by an SPM arm support shaft 21 extending substantially vertically on the side of the plate 4. Further, an SPM nozzle unit drive mechanism 22 is coupled to the SPM arm support shaft 21, and the SPM arm support shaft 21 is rotated by the driving force of the SPM nozzle unit drive mechanism 22, so that the SPM The arm 20 can be swung.

  The sulfuric acid nozzle 16 is connected to a second sulfuric acid supply pipe 23 to which high concentration (for example, 98 wt%) sulfuric acid from a sulfuric acid supply source is supplied. In the middle of the second sulfuric acid supply pipe 23, a sulfuric acid nozzle sulfuric acid valve 24 for switching between supply and stoppage of sulfuric acid to the sulfuric acid nozzle 16 is interposed. The sulfuric acid supplied to the second sulfuric acid supply pipe 23 is temperature-controlled at a predetermined high temperature (160 to 180 ° C.) in the sulfuric acid supply source.

An overwater supply pipe 25 to which hydrogen peroxide solution from a hydrogen peroxide solution supply source is supplied is connected to the overwater nozzle 17. Further, an overwater valve 26 for switching between supply and stoppage of the hydrogen peroxide solution to the overwater nozzle 17 is interposed in the middle of the overwater supply pipe 25. The hydrogen peroxide solution supplied to the overwater supply pipe 25 has a liquid temperature of about room temperature (about 25 ° C.).
An N ₂ supply pipe 55 to which N ₂ gas from an N ₂ supply source is supplied is connected to the N ₂ nozzle 18. N ₂ gas supplied to the N ₂ supply pipe 55 has a temperature of about room temperature (about 25 ° C.). Further, an N ₂ nozzle N ₂ valve 56 for switching between supply and stop of supply of N ₂ gas to the N ₂ nozzle 18 is interposed in the middle of the N ₂ supply pipe 55.

FIG. 3 is a diagram for explaining the configuration of the SPM nozzle unit 5.
The sulfuric acid nozzle 16 and the excessive water nozzle 17 are arranged side by side so as to face downward from the lower surface of the block 19. The sulfuric acid nozzle 16 and the super water nozzle 17 are the sulfuric acid discharged from the sulfuric acid nozzle 16 and the peroxidation discharged from the super water nozzle 17 at substantially the same position on the upper surface of the wafer W held by the lower substrate holder 2. Each is attached to the block 19 in a predetermined discharge direction so that the hydrogen water is deposited. In this embodiment, the sulfuric acid nozzle 16 is attached so that the discharge direction of sulfuric acid discharged from its discharge port is substantially vertical. Further, the overwater nozzle 17 is attached such that the discharge direction of the hydrogen peroxide solution discharged from the discharge port is inclined by 45 °, for example, from the vertical direction. Accordingly, the discharge direction of the hydrogen peroxide solution discharged from the excess water nozzle 17 has a larger inclination angle with respect to the vertical direction than the discharge direction of sulfuric acid discharged from the sulfuric acid nozzle 16.

The N ₂ nozzle 18 is disposed on the opposite side to the sulfuric acid nozzle 16 with respect to the super-water nozzle 17. The N ₂ nozzle 18 is configured such that the discharge direction of the N ₂ gas discharged from the discharge port has a larger inclination angle with respect to the vertical direction than the discharge direction of the hydrogen peroxide solution discharged from the overwater nozzle 17. It is held in block 19. In this embodiment, the N ₂ nozzle 18 is attached so that the discharge direction of the N ₂ gas is inclined by 60 °, for example, from the vertical direction. The hydrogen peroxide water gas discharged from the overwater nozzle 17 receives the N ₂ gas from the N ₂ nozzle 18 and is deposited on the upper surface of the wafer W while being drawn by the sulfuric acid discharged from the sulfuric acid nozzle 16. As a result, the hydrogen peroxide solution discharged from the excess water nozzle 17 can be made to enter under the sulfuric acid discharged from the sulfuric acid nozzle 16 on the upper surface of the wafer W held by the lower substrate holder 2.

FIG. 4 is a block diagram showing an electrical configuration of the substrate processing apparatus. The substrate processing apparatus includes a control device 53 having a configuration including a CPU 50, a ROM 51, and a RAM 52.
The control device 53 includes a plate rotation driving mechanism 11, an SPM nozzle unit driving mechanism 22, a pin pin driving mechanism 38, an ultrasonic sulfuric acid nozzle driving mechanism 29, a spin base lifting / lowering driving mechanism 48, a spin base rotation driving mechanism 49, and an ultrasonic vibration. oscillator 54, ammonia peroxide mixture under valve 13, DIW under the valve 14, sulfate valve 24 for sulfuric nozzle, hydrogen peroxide valve 26, N ₂ nozzle N ₂ valves 56, sulfuric valve 31 ultrasonic sulfate nozzle, ammonia peroxide water valve 43 and DIW on the valve 44, N ₂ upper valve 46 and DIW nozzle DIW valve 36 is connected as a control target.

In accordance with a program stored in the CPU 50, the control device 53 includes a plate rotation driving mechanism 11, an SPM nozzle unit driving mechanism 22, a pin pin driving mechanism 38, an ultrasonic sulfuric acid nozzle driving mechanism 29, a spin base lifting / lowering driving mechanism 48, and a spin base. The operations of the rotation drive mechanism 49 and the ultrasonic vibration oscillator 54 are controlled.
Controller 53, also, the ammonia peroxide mixture under valve 13, DIW under the valve 14, sulfate valve 24 for sulfuric nozzle, hydrogen peroxide valve 26, N ₂ nozzle N ₂ valve 56, ultrasonic sulfate nozzle sulfate valve 31, the ammonia controls the opening and closing of the over-water valve 43, DIW on the valve 44, N ₂ upper valve 46 and DIW nozzle DIW valve 36.

FIG. 5 is a process diagram for explaining the flow of resist removal processing in the substrate processing apparatus.
Hereinafter, with reference to FIG. 1 and FIG. 5, the resist removal processing of this substrate processing apparatus will be described.
During the resist removal process, the wafer W after the ion implantation process is carried into the process chamber 1 by a transfer robot (not shown). The wafer W has not been subjected to a process for ashing the resist, and a hardened layer that has been altered by ion implantation is present on the surface of the resist on the surface thereof. When the wafer W is carried in, the spin base 40 of the upper substrate holder 3 is in a spaced position spaced upward from the plate 4 of the lower substrate holder 2.

  The wafer W is placed on the upper surface of the plate 4 with its surface facing upward, and is held by the lower substrate holder 2. When the wafer W is held by the lower substrate holder 2, the plate rotation drive mechanism 11 is driven to start the rotation of the plate 4. As the plate 4 rotates, the wafer W held on the plate 4 is also rotated. As described above, since the plate 4 holds the wafer W by the frictional force generated between the upper portion of the contact member 7 and the lower surface (back surface) of the wafer W, the holding force with respect to the wafer W is not so high. Therefore, the rotational speed of the plate 4 at this time is set to about 100 rpm, for example.

After the rotation of the wafer W is started, the SPM nozzle unit drive mechanism 22 is controlled so that the SPM nozzle unit 5 moves from the standby position set on the side of the plate 4 to above the wafer W held on the plate 4. Moved. Then, the sulfuric acid valve 24 for sulfuric acid nozzle is opened, and sulfuric acid having a predetermined high temperature (160 to 180 ° C.) is discharged from the sulfuric acid nozzle 16 of the SPM nozzle unit 5 toward the upper surface of the rotating wafer W. Further, the overwater valve 26 is opened, and room temperature hydrogen peroxide solution is discharged from the overwater nozzle 17 of the SPM nozzle unit 5 toward the upper surface of the rotating wafer W. Further, the N ₂ nozzle N ₂ valve 56 is opened, and N ₂ gas is blown from the N ₂ nozzle 18 toward the hydrogen peroxide solution discharged from the super-water nozzle 17. Hydrogen peroxide water discharged from the hydrogen peroxide solution nozzle 17 receives the N ₂ gas from the N ₂ nozzle 18, slips below the sulfuric acid discharged from the sulfuric nozzle 16.

The predetermined high-temperature sulfuric acid discharged from the sulfuric acid nozzle 16 and the room temperature hydrogen peroxide solution discharged from the super-water nozzle 17 are deposited on substantially the same position on the upper surface of the wafer W. On the wafer W, sulfuric acid and hydrogen peroxide solution are mixed and reacted to generate SPM containing a large amount of peroxo-sulfuric acid (H ₂ SO ₅ ). Due to the heat of reaction caused by the reaction between 160 to 180 ° C. sulfuric acid and hydrogen peroxide solution at room temperature, the SPM is heated, and the liquid temperature of the SPM reaches about 200 ° C. immediately after its generation. SPM at about 200 ° C. shortly after the generation acts on the resist on the upper surface of the wafer W (step S1: SPM processing).

SPM improves the resist stripping ability as the liquid temperature increases. On the other hand, as the liquid temperature rises, SPM has a higher rate of deterioration due to the decay of peroxo-sulfuric acid contained in SPM.
Since SPM is produced by mixing sulfuric acid and hydrogen peroxide solution on the upper surface of the wafer W, the SPM is formed on the upper surface of the wafer W before deterioration even at a high temperature of about 200 ° C. Act on resist. As a result, the resist formed on the upper surface of the wafer W can be removed satisfactorily.

The SPM used for this resist stripping process has a mixing ratio of sulfuric acid and hydrogen peroxide water of 20: 1. For this reason, while the discharge amount of the sulfuric acid discharged from the sulfuric acid nozzle 16 is 1 (L / min), the discharge amount of the hydrogen peroxide solution discharged from the overwater nozzle 17 is 0.05 (L / min). ) And a small amount.
As described above, on the upper surface of the wafer W, the hydrogen peroxide solution discharged from the excess water nozzle 17 can be submerged below the sulfuric acid discharged from the sulfuric acid nozzle 16. Therefore, a small amount of hydrogen peroxide solution can be satisfactorily brought into contact with a large amount of sulfuric acid, and SPM can be generated efficiently.

  In this SPM process, the SPM nozzle unit drive mechanism 22 is controlled to swing the SPM arm 20 within a predetermined angle range. Thus, the supply position on the upper surface of the wafer W to which the sulfuric acid and hydrogen peroxide solution from the SPM nozzle unit 5 are guided is within the range from the rotation center of the wafer W to the peripheral edge of the wafer W. Reciprocating while drawing an arc-shaped trajectory that intersects the direction. Accordingly, fresh SPM is supplied at a high temperature over the entire upper surface of the wafer W.

The SPM on the upper surface of the wafer W penetrates the inside of the hardened layer through a large number of fine holes formed in the hardened layer. As a result, the strong oxidizing power of SPM acts on the raw resist (uncured resist) inside the hardened layer, and the raw resist is removed. For this reason, only the hollow hardened layer remains on the surface of the wafer W.
In the SPM process, the substrate holding unit 3 is disposed at a spaced apart position away from the plate 4 of the substrate holding unit 2, so that the substrate holding unit 3 obstructs the swing of the SPM arm 20. It is possible to prevent the on-substrate holder 3 from being affected by the high temperature SPM.

When the SPM supply position is reciprocated a predetermined number of times, the sulfuric acid nozzle sulfuric acid valve 24 and the superwater valve 26 are closed, the supply of sulfuric acid and hydrogen peroxide solution to the wafer W is stopped, and the SPM nozzle unit 5 Is returned to the retracted position on the side of the plate 4.
Next, the ultrasonic sulfuric acid nozzle drive mechanism 29 is controlled, and the ultrasonic sulfuric acid nozzle 6 is moved above the wafer W from the standby position set on the side of the plate 4. Then, the sulfuric acid valve 31 for the ultrasonic sulfuric acid nozzle is opened, the ultrasonic vibrator 32 is vibrated in response to the oscillation signal from the ultrasonic vibration oscillator 54, and ultrasonic vibration is applied from the ultrasonic sulfuric acid nozzle 6. Sulfuric acid is discharged toward the upper surface of the rotating wafer W (S2: ultrasonic sulfuric acid treatment).

  In this ultrasonic sulfuric acid treatment, the ultrasonic sulfuric acid nozzle drive mechanism 29 is controlled to swing the ultrasonic sulfuric acid arm 27 within a predetermined angle range. As a result, the supply position on the upper surface of the wafer W from which the sulfuric acid from the ultrasonic sulfuric acid nozzle 6 is guided is within a range from the rotation center of the wafer W to the peripheral edge of the wafer W and intersects with the rotation direction of the wafer W. Reciprocates while drawing an arcuate trajectory. Therefore, sulfuric acid to which ultrasonic waves are applied is supplied to the entire upper surface of the wafer W.

When sulfuric acid to which ultrasonic vibration is applied is supplied to the surface of the wafer W, the cured layer of the resist remaining on the surface of the wafer W is broken and pulverized by the physical energy of the ultrasonic vibration. The pulverized cured layer is removed from the surface of the wafer W together with sulfuric acid.
Next, the DIW nozzle DIW valve 36 is opened while the rotation of the wafer W is continued. Thereby, DIW is discharged from the DIW nozzle 34 toward the center of the upper surface of the rotating wafer W (S3: rinse process). The DIW supplied to the central portion of the wafer W flows on the upper surface of the wafer W, and sulfuric acid adhering to the upper surface of the wafer W is washed away by the DIW.

When a predetermined time has elapsed from the start of DIW discharge, the DIW nozzle DIW valve 36 is closed, the supply of DIW to the upper surface of the wafer W is stopped, and the drive of the plate rotation drive mechanism 11 is stopped. The rotation of the plate 4 and the wafer W is stopped.
Thereafter, the SC1 process in step S5, the rinse process in step S6, and the spin dry process in step S7 are performed on the wafer W. These processes are performed not on the substrate lower holding unit 2 but on the substrate upper holding unit 3. This is performed with W held. For this reason, after completion of the rinsing process in step S3, the wafer W is transferred from the lower substrate holder 2 to the upper substrate holder 3 (step S4).

  In the delivery of the wafer W, the spin base lifting / lowering drive mechanism 48 is driven, and the spin base 40 is lowered to a close position close to the upper surface of the wafer W placed on the upper surface of the plate 4 (FIG. 6A). )reference). The spin base lifting / lowering drive mechanism 48 is driven, and the spin base 40 is lowered to a close position close to the upper surface of the wafer W. At this close position, the plurality of pinching pins 37 are positioned on the side of the periphery of the wafer W. In this proximity position, the pinching pin driving mechanism 38 is driven, and the plurality of pinching pins 37 are guided from the open position to the pinching position. Thereby, the wafer W is held by the substrate holding unit 3, and the transfer of the wafer W from the substrate lower holding unit 2 to the substrate holding unit 3 is achieved.

After the wafer W is held by the on-substrate holder 3, the spin base lifting / lowering drive mechanism 48 is driven to raise the spin base 40 from the proximity position to the upper processing position for each wafer W.
This processing position is located a slight distance above the proximity position, so that the liquid discharged from the lower surface nozzle 15 is supplied to the central portion of the lower surface of the wafer W at the processing position. In this processing position, the wafer W is not only limited in space near the upper surface by the substrate facing surface 39 of the spin base 40 that holds the wafer W, but also by the upper surface of the plate 4. The space near the lower surface is limited. When the spin base 40 is raised to the processing position, the spin base rotation drive mechanism 49 is driven and rotation of the wafer W is started.

  When the rotational speed of the wafer W reaches a predetermined high speed (for example, 800 rpm), the ammonia overwater valve 43 is opened, and room temperature SC1 is discharged from the opening of the upper surface nozzle 42 toward the center of the upper surface of the wafer W. . In addition, the ammonia excess water lower valve 13 is opened, and room temperature SC1 is discharged from the lower surface nozzle 15 toward the center of the lower surface of the wafer W (S5: SC1 processing, see FIG. 6B).

  The SC 1 supplied to the upper surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, flows from the center of the upper surface of the wafer W toward the periphery, and spreads over the entire upper surface of the wafer W. The SC 1 supplied to the lower surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows along the lower surface of the wafer W from the central portion toward the peripheral edge, and spreads over the entire lower surface of the wafer W. Thereby, the resist residue adhering to the upper surface of the wafer W is removed.

  In particular, since the rotation speed of the wafer W is a predetermined high speed (for example, 800 rpm), the centrifugal force received by the SC 1 supplied to the wafer W is relatively large. Therefore, the rotation is supplied to the central portion of the lower surface of the wafer W. SC1 can be distributed to the periphery of the lower surface of the wafer W. When a predetermined time has elapsed from the start of DIW discharge, the ammonia overwater upper valve 43 and the ammonia overwater lower valve 13 are closed.

  Next, while the rotation of the wafer W is continued, the DIW upper valve 44 is opened, and room temperature DIW is discharged from the upper surface nozzle 42 toward the center of the upper surface of the wafer W. Also, the DIW lower valve 14 is opened, and room temperature DIW is discharged from the lower surface nozzle 15 toward the center of the lower surface of the wafer W (S6: rinse treatment, see FIG. 6C). The DIW supplied to the upper surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows from the central portion toward the peripheral edge of the wafer W, and spreads over the entire upper surface of the wafer W. The DIW supplied to the lower surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, flows along the lower surface of the wafer W from the central portion toward the periphery, and spreads over the entire lower surface of the wafer W. Thereby, SC1 adhering to the upper surface and the lower surface of wafer W is washed away.

In particular, since the rotation speed of the wafer W is a predetermined high speed (for example, 800 rpm), the centrifugal force received by the DIW supplied to the wafer W is relatively large. Therefore, the wafer W is supplied to the central portion of the lower surface of the wafer W. The DIW can be distributed to the periphery of the lower surface of the wafer W.
Thus, in the SC1 process in step S5 and the rinse process in step S6, SC1 and DIW are respectively supplied to the wafer W rotated at a predetermined high speed by the second holding unit 40. Further, the SC1 treatment and the rinsing treatment can be uniformly applied to the entire area of the lower surface.

  When a predetermined time has elapsed from the start of the rinsing process, the DIW upper valve 44 and the DIW lower valve 14 are closed. Thereafter, the spin base rotation drive mechanism 49 is controlled to increase the rotation speed of the wafer W to a predetermined high rotation speed (for example, 3000 rpm). As a result, spin dry is performed on the wafer W to rotate the wafer W at a rotational speed at which the DIW droplets adhering to the upper and lower surfaces of the wafer W are spun off (see step S7, FIG. 6D). By this spin drying, DIW adhering to the wafer W is completely removed.

During spin drying, the plate rotation drive mechanism 11 is driven, and the plate 4 is rotated in the same direction as the rotation direction of the wafer W and at the same rotation speed (3000 rpm) as the wafer W. Further, the N ₂ upper valve 46 is opened, and N ₂ gas at room temperature is supplied from the opening of the N ₂ flow passage 45 to the space between the spin base 40 and the wafer W.
Since the plate 4 facing the lower surface of the wafer W is rotated in the same direction as the rotation direction of the wafer W, no turbulent flow is generated in the space between the wafer W and the plate 4. For this reason, a DIW mark or the like does not remain on the lower surface of the wafer W during the drying process.

Further, N by the supply of ₂ gas, stable air flow space of the N ₂ gas between the spin base 40 and the wafer W occurs. For this reason, a DIW mark or the like is not left on the upper surface of the dried wafer W. As a result, the wafer W can be satisfactorily dried.
When the spin dry is performed for a predetermined time, the drive of the spin base rotation drive mechanism 49 is stopped, and the rotation of the spin base 40 and the wafer W is stopped. After the spin base lifting / lowering drive mechanism 48 is driven and the spin base 40 is retracted to the retracted position together with the wafer W, the wafer W subjected to a series of resist removal processing is unloaded by a transfer robot (not shown).

  As described above, in this embodiment, the wafer W is held by the lower substrate holder 2 during the SPM process in which the SPM of about 200 ° C. is used. Since the lower substrate holding unit 2 supports the lower surface of the wafer W, the substrate lower holding unit 2 does not receive a force exceeding the weight of the wafer W. Therefore, even under a high temperature environment, the lower substrate holding part 2 does not deform and can keep holding the wafer W stably. On the other hand, the wafer W is held by the on-substrate holding unit 3 during the SC1 process and spin drying. Since the SC1 process and the spin dry are performed in a lower temperature environment than the SPM process, even if the wafer W is firmly held by the substrate holding unit 3, the substrate holding unit 3 is not deformed. Therefore, the on-substrate holding unit 3 can rotate the wafer W at a relatively high speed while holding the wafer W firmly. Therefore, the SPM process, the SC1 process, and the spin dry can be performed on the wafer W.

  The on-substrate holding unit 3 is provided so as to be movable up and down to a separation position spaced upward from the lower substrate holding unit 2 and a close position where the wafer W can be delivered to and from the lower substrate holding unit 2. As a result, during the SPM process, the substrate holding unit 3 is arranged at a separated position so that the substrate holding unit 3 interferes with the processing operation or the substrate holding unit 3 is affected by the high temperature SPM. Can be prevented. Further, the upper substrate holding unit 3 can be disposed in the proximity position so that the wafer W can be transferred between the lower substrate holding unit 2 and the upper substrate holding unit 3.

Further, since SPM is generated by mixing sulfuric acid and hydrogen peroxide solution on the upper surface of the wafer W, the SPM is applied to the upper surface of the wafer W before deterioration even at a high temperature of about 200 ° C. It acts on the formed resist. As a result, the resist formed on the upper surface of the wafer W can be satisfactorily removed.
The description of one embodiment of the present invention is as described above, but the present invention can also be implemented in other embodiments.

FIG. 7 is a diagram for explaining another process example of the SPM process. In FIG. 7, portions corresponding to the above-described portions are denoted by the same reference numerals as those portions. Further, in the following, detailed description of each part given the same reference numeral is omitted.
In the SPM process shown in FIG. 7, the discharge of sulfuric acid from the sulfuric acid nozzle 16 and the discharge of hydrogen peroxide water from the overwater nozzle 17 are alternately repeated.

  Specifically, the overwater valve 26 is opened for 2 seconds. At this time, the hydrogen peroxide solution is discharged from the overwater nozzle 17 toward the upper surface of the wafer W. The wafer W is rotated at 100 rpm. For this reason, the hydrogen peroxide solution discharged on the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and moves toward the periphery of the wafer W. For this reason, a liquid film of hydrogen peroxide solution is formed on the upper surface of the wafer W (see FIG. 7A).

  After the super-water valve 26 is closed, the sulfuric acid nozzle sulfuric acid valve 24 is opened for 2 seconds. At this time, sulfuric acid is discharged from the sulfuric acid nozzle 16 toward the liquid film of the hydrogen peroxide solution on the upper surface of the wafer W (see FIG. 7B). Thereby, on the upper surface of the wafer W, sulfuric acid and hydrogen peroxide solution are mixed to generate SPM. The SPM extends over the entire upper surface of the wafer W. Thereafter, the sulfuric acid supplied to the upper surface of the wafer W receives a centrifugal force due to the rotation of the wafer W and moves toward the periphery of the wafer W. For this reason, a liquid film of sulfuric acid is formed on the upper surface of the wafer W (see FIG. 7C).

  After the sulfuric acid valve 24 for the sulfuric acid nozzle is closed, the superwater valve 26 is opened again for 2 seconds. At this time, hydrogen peroxide solution is discharged from the super-water nozzle 17 toward the sulfuric acid liquid film on the upper surface of the wafer W (see FIG. 7D). Thereby, on the upper surface of the wafer W, sulfuric acid and hydrogen peroxide solution are mixed to generate SPM. The SPM extends over the entire upper surface of the wafer W. In this manner, the discharge of sulfuric acid from the sulfuric acid nozzle 16 and the discharge of hydrogen peroxide water from the super-water nozzle 17 are repeated alternately.

  In this SPM process, sulfuric acid is supplied to the liquid film in a state where a liquid film of hydrogen peroxide solution is formed on the upper surface of the wafer W, and a liquid film of sulfuric acid is formed on the upper surface of the wafer W. In this state, hydrogen peroxide solution is supplied to the liquid film. Therefore, the hydrogen peroxide solution and sulfuric acid can be reliably mixed on the upper surface of the wafer W. As a result, SPM can be generated efficiently.

As mentioned above, although two embodiment of this invention was described, this invention can also be implemented with another form.
The sulfuric acid nozzle 16 may have a configuration in which a small amount of warm water or a small amount of hydrogen peroxide water is mixed, and sulfuric acid that has been heated using the heat of reaction generation or the heat of dilution at that time is supplied. In this case, in order to suppress or prevent the deterioration of sulfuric acid, it is desirable that the mixing of warm water or hydrogen peroxide into sulfuric acid is performed in the middle of the second sulfuric acid supply pipe 23.

Further, the SPM nozzle unit 5 is not limited to the above-described configuration. For example, the SPM nozzle unit is composed of a double cylinder of an outer cylinder and an inner cylinder, hydrogen peroxide solution is discharged from the inner cylinder, and sulfuric acid is discharged from between the outer cylinder and the inner cylinder. There may be.
In the above-described embodiment, it has been described that the wafer W is subjected to the ultrasonic sulfuric acid treatment after the wafer W is subjected to the SPM treatment. However, after the wafer W is subjected to the ultrasonic sulfuric acid treatment, the wafer W is subjected to the SPM treatment. Processing may be performed. Even in such a case, the resist can be removed from the surface of the wafer W.

In the above-described embodiment, SC1 is used as the resist residue removal processing solution for removing the resist residue, but hot water or choline (TMI) may be used instead.
In addition, various design changes can be made within the scope of matters described in the claims.

1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. It is a top view of a plate. It is a figure for demonstrating the structure of the nozzle unit for SPM. It is a block diagram which shows the electric constitution of this substrate processing apparatus. It is process drawing for demonstrating the flow of the resist removal process in a substrate processing apparatus. It is a figure which shows an example of each process of the delivery of a wafer, a rinse process, and a spin dry. It is a figure for demonstrating the other process example of a SPM process.

Explanation of symbols

1 Processing chamber 2 Substrate holding part (High temperature processing substrate holding means)
3 Substrate holder (rotating substrate holder)
4 Plate 16 Sulfuric acid nozzle 17 Super-water nozzle 24 Sulfuric acid valve for sulfuric acid nozzle (sulfuric acid valve)
26 Overwater valve 37 Clamping pin (Clamping member)
39 Substrate facing surface 40 Spin base (base)
53 Controller W Wafer (Substrate)

Claims (9)

A substrate processing apparatus for performing a high temperature process for processing a substrate using a fluid higher than normal temperature and a rotation process for rotating and processing a substrate in a lower temperature environment than during the high temperature process,
A substrate holding means for high temperature processing for supporting the lower surface of the substrate and holding the substrate during the high temperature processing;
A substrate processing apparatus comprising: a rotation processing substrate holding means for rotating the substrate while holding the substrate during the rotation processing.   The rotation processing substrate holding means is disposed to face the upper side of the high temperature processing substrate holding means, and is spaced apart from the high temperature processing substrate holding means, and the high temperature processing substrate holding means. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided so as to be able to be raised and lowered to a proximity position where the substrate can be delivered between the two.   The rotation processing substrate holding means is disposed on a substrate-facing surface of the base having a substrate-facing surface facing the upper surface of the substrate, and holds the substrate by contacting the peripheral edge of the substrate. The substrate processing apparatus according to claim 2, further comprising a plurality of clamping members.   4. The substrate processing apparatus according to claim 1, wherein the high-temperature treatment is a treatment for removing the resist from the upper surface of the substrate using a mixed solution of sulfuric acid and hydrogen peroxide solution. A sulfuric acid nozzle for discharging sulfuric acid toward the upper surface of the substrate held by the high temperature processing substrate holding means;
The substrate processing apparatus according to claim 4, further comprising an overwater nozzle that discharges a hydrogen peroxide solution toward an upper surface of the substrate held by the high temperature processing substrate holding means.   The substrate according to claim 5, wherein the discharge direction of the hydrogen peroxide solution discharged from the overwater nozzle has a larger inclination angle with respect to the vertical direction than the discharge direction of sulfuric acid discharged from the sulfuric acid nozzle. Processing equipment. A sulfuric acid valve for switching between discharge and stoppage of sulfuric acid from the sulfuric acid nozzle;
An overwater valve for switching discharge and discharge stop of the hydrogen peroxide solution from the overwater nozzle;
The substrate processing according to claim 5, further comprising a control unit that controls the sulfuric acid valve and the overwater valve to alternately and repeatedly discharge sulfuric acid and hydrogen peroxide solution. apparatus. A substrate processing method executed in a substrate processing apparatus comprising a high temperature processing substrate holding means for supporting a lower surface of a substrate and holding the substrate and a rotation processing substrate holding means for rotating the substrate while holding the substrate,
A high temperature processing step of performing a high temperature processing using a fluid higher than normal temperature on the substrate held by the high temperature processing substrate holding means;
Delivering the substrate between the high temperature processing substrate holding means and the rotation processing substrate holding means;
A substrate processing method comprising: a rotation processing step of performing rotation processing in which the substrate is rotated by the substrate processing means for rotation processing in an environment at a temperature lower than that during the high temperature processing step. The high-temperature treatment step includes a sulfuric acid discharge step for discharging sulfuric acid toward the upper surface of the substrate, and an overwater discharge step for discharging hydrogen peroxide solution toward the upper surface of the substrate,
The substrate processing method according to claim 8, wherein the sulfuric acid discharge step and the excessive water discharge step are alternately and repeatedly executed.

Images