JP5090030B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method used for removing unnecessary resist from the surface of a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, glass substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, A photomask substrate or the like is included.

  The manufacturing process of a semiconductor device includes, for example, a step of locally implanting impurities (ions) such as phosphorus, arsenic, and boron into the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”). In this step, in order to prevent ion implantation into an undesired portion, a resist made of a photosensitive resin is patterned on the surface of the wafer, and a portion where ion implantation is not desired is masked by the resist. Since the resist patterned on the surface of the wafer becomes unnecessary after the ion implantation, a resist removal process for removing the unnecessary resist on the surface of the wafer is performed after the ion implantation.

  In a typical resist removal process, the surface of the wafer is irradiated with oxygen plasma, and the resist on the surface of the wafer is ashed. Then, a chemical solution such as sulfuric acid / hydrogen peroxide mixture (SPM) which is a mixed solution of sulfuric acid and hydrogen peroxide solution is supplied to the surface of the wafer, and the ashed resist is removed. The removal of the resist from the surface of the wafer is achieved.

However, irradiation with oxygen plasma for ashing the resist damages a portion of the wafer surface that is not covered with the resist (for example, an oxide film exposed from the resist).
Therefore, recently, without ashing the resist, SPM is supplied to the surface of the wafer, and the resist is peeled off from the surface of the wafer by the strong oxidizing power of peroxo-sulfuric acid (H ₂ SO ₅ ) contained in this SPM. The removal method is attracting attention.
JP 2005-32819 A

However, in a wafer on which ion implantation with a high dose (for example, a dose amount of 10 ¹⁶ ions / cm ² or more) has been performed, the resist surface is denatured (cured). In some cases, the wafer cannot be removed well from the surface.
Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can remove even a resist having a hardened layer on the surface thereof without damaging the substrate.

The invention according to claim 1 for achieving the above object is a substrate processing apparatus used for removing a resist from the surface of a substrate (W), comprising a substrate holding means (4) for holding a substrate, Sulfuric acid / hydrogen peroxide supply means (5) for supplying a mixed solution of sulfuric acid and hydrogen peroxide solution to the surface of the substrate held by the substrate holding means, and the surface of the substrate held by the substrate holding means On the other hand, ultrasonic sulfuric acid supply means (6, 25, 28) for supplying sulfuric acid to which ultrasonic vibration is applied and the substrate holding means are accommodated, and sulfuric acid to which ultrasonic vibration is applied, and sulfuric acid and peroxidation. A sulfuric acid treatment chamber (1, 51, 71) for performing treatment with a mixed solution of hydrogen water, and a resist residue removal treatment chamber for performing resist residue removal processing for removing resist residues from the substrate processed in the sulfuric acid treatment chamber. (2) Wherein the said resist residue removal process chamber while holding the substrate, wherein the substrate rotating means for rotating (40) is provided around an axis intersecting the surface of the substrate, the substrate processing apparatus It is.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, a mixed liquid of sulfuric acid and hydrogen peroxide solution (hereinafter referred to as sulfuric acid hydrogen peroxide solution) can be supplied to the surface of the substrate, and by supplying sulfuric acid hydrogen peroxide solution to the surface of the substrate, The raw resist (uncured resist) on the surface of the substrate can be decomposed and removed. At this time, even if the resist on the surface of the substrate has a hardened layer on the surface, the sulfuric acid hydrogen peroxide solution supplied to the surface of the substrate passes through the numerous micropores of the hardened layer and passes through the hardened layer. Can penetrate inside. Therefore, the raw resist can be removed from the surface of the substrate by supplying the sulfuric acid hydrogen peroxide solution regardless of the presence or absence of the hardened layer on the resist surface.

Further, it is possible to supply a sulfuric acid ultrasonic vibration is applied to the surface of the substrate. Since sulfuric acid to which ultrasonic vibration is applied has large physical energy, even if the resist has a hardened layer on its surface by supplying sulfuric acid to which this ultrasonic vibration has been applied to the surface of the substrate, The hardened layer can be destroyed and removed.
Thus, by supplying the sulfuric acid hydrogen peroxide solution and sulfuric acid to which ultrasonic vibration has been applied back and forth to the substrate, even a resist having a hardened layer on the surface can be removed from the surface of the substrate without ashing. Can be removed. Since resist ashing is unnecessary, the problem of damage to the surface of the substrate due to ashing can be avoided.
Further, the resist residue removing process is performed in a resist residue removing process chamber that accommodates the substrate rotating means.
For example, the resist residue removing treatment can be uniformly applied to the entire surface of the substrate by rotating the substrate by the substrate rotating means and supplying the resist residue removing treatment liquid to the surface of the substrate. It is also possible to spin dry the substrate by rotating the substrate at a rotational speed at which the droplets on the surface are shaken off. In this case, the surface of the substrate after the resist residue removal treatment can be satisfactorily dried. .
According to a second aspect of the present invention, there is provided a substrate transfer means (RB) that is disposed between the sulfuric acid treatment chamber and the resist residue removal treatment chamber and conveys a substrate from the sulfuric acid treatment chamber to the resist residue removal treatment chamber. The substrate processing apparatus according to claim 1, further comprising:
According to this configuration, the substrate transfer means is disposed between the sulfuric acid treatment chamber and the resist residue removal treatment chamber. By this substrate transfer means, the substrate can be directly transferred from the sulfuric acid treatment chamber to the resist residue removal treatment chamber. Therefore, even if the substrate is transferred from the sulfuric acid treatment chamber to the resist residue removal treatment chamber while droplets of sulfuric acid or the like remain attached, sulfuric acid or the like remains outside the sulfuric acid treatment chamber and the resist residue removal treatment chamber. There is no leakage. Therefore, it is not necessary to remove droplets before the substrate is transported from the sulfuric acid treatment chamber to the resist residue removal treatment chamber, and the time required for substrate processing can be shortened.

According to a third aspect of the present invention, in the ultrasonic sulfuric acid supply means, the ultrasonic sulfuric acid nozzle (6) discharges sulfuric acid provided with ultrasonic vibrations toward the surface of the substrate held by the substrate holding means. 3. The substrate processing apparatus according to claim 1, further comprising:
According to this configuration, sulfuric acid to which ultrasonic vibration is applied is discharged from the ultrasonic sulfuric acid nozzle toward the surface of the substrate. Thereby, supply of sulfuric acid to which ultrasonic vibration is applied to the substrate surface can be realized with a simple configuration.

A fourth aspect of the present invention is the substrate processing apparatus according to the third aspect, wherein the sulfuric acid discharged from the ultrasonic sulfuric acid nozzle (6) is sulfuric acid having a temperature higher than room temperature.
According to this configuration, high-temperature sulfuric acid to which ultrasonic vibration is applied is discharged onto the surface of the substrate. When a resist that does not react with sulfuric acid hydrogen peroxide and reacts with high-temperature sulfuric acid is formed on the surface of the substrate, high-temperature sulfuric acid to which ultrasonic vibration is applied is supplied to the surface of the substrate, The resist on the surface of the substrate is removed.

According to a fifth aspect of the present invention, the ultrasonic sulfuric acid supply means includes a sulfuric acid supply pipe (25) for an ultrasonic sulfuric acid nozzle for supplying sulfuric acid to the ultrasonic sulfuric acid nozzle (6), and the ultrasonic sulfuric acid. The substrate processing apparatus according to claim 4 , further comprising a one-pass heater (28) for ultrasonic sulfuric acid nozzles for heating sulfuric acid flowing through the sulfuric acid supply pipe for nozzles.
The one-pass heater is a non-circular heater that is provided in the middle of the non-circulating flow path and heats the fluid flowing through the flow path by heating in the flow process.

  According to this configuration, the sulfuric acid heated by the ultrasonic sulfuric acid nozzle one-pass heater is supplied to the ultrasonic sulfuric acid nozzle. For example, in a configuration in which high-temperature sulfuric acid of 200 ° C. or higher is stored in a tank, ultrasonic vibration is applied to the high-temperature sulfuric acid, and this is applied to the ultrasonic sulfuric acid nozzle, the path from the tank to the ultrasonic sulfuric acid nozzle It is necessary to give all the above members heat resistance to high temperatures of 200 ° C. or higher. On the other hand, in the configuration including the one-pass heater for ultrasonic sulfuric acid nozzles, sulfuric acid of less than 200 ° C. can be heated to 200 ° C. or higher by the one-pass heater for ultrasonic sulfuric acid nozzles and supplied to the ultrasonic sulfuric acid nozzle. Therefore, it is sufficient to provide heat resistance to the member on the downstream side (ultrasonic sulfuric acid nozzle side) from the one-pass heater for the ultrasonic sulfuric acid nozzle. Thereby, cost reduction can be aimed at.

The invention described in claim 6 further includes a high-temperature sulfuric acid nozzle (72) for discharging sulfuric acid having a temperature higher than normal temperature toward the surface of the substrate held by the substrate holding means. The substrate processing apparatus according to any one of 1 to 5 .
According to this configuration, high-temperature sulfuric acid is discharged from the high-temperature sulfuric acid nozzle onto the surface of the substrate. When a resist that does not react with sulfuric acid and hydrogen peroxide and reacts with high-temperature sulfuric acid is formed on the surface of the substrate, the high-temperature sulfuric acid is supplied to the surface of the substrate. Removed. Thereby, the resist can be removed more effectively.

The invention according to claim 7 is a sulfuric acid supply pipe (76) for a high-temperature sulfuric acid nozzle for supplying sulfuric acid to the high-temperature sulfuric acid nozzle (72), and a sulfuric acid circulating in the sulfuric acid supply pipe for the high-temperature sulfuric acid nozzle. The substrate processing apparatus according to claim 6 , further comprising a one-pass heater for a high-temperature sulfuric acid nozzle for heating the high-temperature sulfuric acid nozzle.
According to this configuration, sulfuric acid heated by the one-pass heater for the high-temperature sulfuric acid nozzle is supplied to the high-temperature sulfuric acid nozzle. For example, in a configuration in which high-temperature sulfuric acid of 200 ° C. or higher is stored in a tank and this high-temperature sulfuric acid is applied to the high-temperature sulfuric acid nozzle, all members on the path from the tank to the high-temperature sulfuric acid nozzle have a high temperature of 200 ° C. or higher. It is necessary to have heat resistance against. On the other hand, in the configuration including the one-pass heater for the high-temperature sulfuric acid nozzle, sulfuric acid of less than 200 ° C. can be heated to 200 ° C. or more by the one-pass heater for the high-temperature sulfuric acid nozzle and supplied to the high-temperature sulfuric acid nozzle. Therefore, it is sufficient to provide heat resistance to the member on the downstream side (high temperature sulfuric acid nozzle side) of the one-pass heater for the high temperature sulfuric acid nozzle. Thereby, cost reduction can be aimed at.

According to an eighth aspect of the present invention, the substrate holding means includes a contact member (7) for contacting the back surface of the substrate and holding the substrate by a frictional force generated between the substrate and the back surface of the substrate. and wherein a substrate processing apparatus according to any one of claims 1 to 7.
For example, in an end surface holding type substrate holding means that holds a substrate by bringing a resin chuck pin into contact with the end surface of the substrate, if the substrate is processed in a high temperature environment of about 200 ° C. or higher, the chuck pin is There is a risk of deformation due to reaction force from the substrate. If the chuck pins are deformed, the substrate cannot be stably held.

On the other hand, in the configuration in which the substrate is held by the substrate holding means by the frictional force generated between the back surface of the substrate and the contact member, the contact member does not receive a large reaction force from the substrate. Therefore, even if the substrate is held in a high temperature environment of about 200 ° C., the contact member does not suffer from defects such as deformation. Thereby, the board | substrate to which a high temperature process is performed can be hold | maintained stably.
The invention according to claim 9 further includes a removing means (52) for supplying a gas to the surface of the substrate held by the substrate holding means to remove droplets adhering to the surface of the substrate. and wherein a substrate processing apparatus according to any one of claims 1 to 8.

According to this configuration, the droplets on the surface of the substrate can be removed by the gas supplied to the surface of the substrate .

A tenth aspect of the present invention is a substrate processing method used for removing a resist from the surface of a substrate (W), the ultrasonic sulfuric acid supplying sulfuric acid to which ultrasonic vibration is applied to the surface of the substrate. A supplying step (S1: S11: S22), a sulfuric acid / hydrogen peroxide supplying step (S1: S11: S22) for supplying a mixed solution of sulfuric acid and hydrogen peroxide solution to the surface of the substrate, and the ultrasonic sulfuric acid supplying step. And a resist residue removing step (S5: S16: S26) for removing a resist residue on the surface of the substrate after the sulfuric acid / hydrogen peroxide supplying step .

According to this method, a mixed solution of sulfuric acid and hydrogen peroxide can be supplied to the surface of the substrate, and the raw resist on the surface of the substrate is decomposed by supplying sulfuric acid and hydrogen peroxide to the surface of the substrate. And can be removed. At this time, even if the resist on the surface of the substrate has a hardened layer on the surface, the sulfuric acid hydrogen peroxide solution supplied to the surface of the substrate passes through the numerous micropores of the hardened layer and passes through the hardened layer. Can penetrate inside. Therefore, the raw resist can be removed from the surface of the substrate by supplying the sulfuric acid hydrogen peroxide solution regardless of the presence or absence of the hardened layer on the resist surface.
In addition, sulfuric acid with ultrasonic vibration applied to the surface of the substrate can be supplied. Since sulfuric acid to which ultrasonic vibration is applied has large physical energy, even if the resist has a hardened layer on its surface by supplying sulfuric acid to which this ultrasonic vibration has been applied to the surface of the substrate, The hardened layer can be destroyed and removed.
Thus, by supplying the sulfuric acid hydrogen peroxide solution and sulfuric acid to which ultrasonic vibration has been applied back and forth to the substrate, even a resist having a hardened layer on the surface can be removed from the surface of the substrate without ashing. Can be removed. Since resist ashing is unnecessary, the problem of damage to the surface of the substrate due to ashing can be avoided.
In addition, after the treatment using sulfuric acid to which ultrasonic vibration is applied and the treatment using sulfuric acid hydrogen peroxide solution are applied to the substrate, the resist residue can be removed from the surface of the substrate. Thereby, a resist residue can be favorably removed from the substrate after the resist is removed.
The invention according to claim 11 is a substrate processing method used for removing a resist from the surface of a substrate (W), wherein the sulfuric acid is used to supply sulfuric acid with ultrasonic vibration applied to the surface of the substrate. A supplying step (S1: S11: S22), a sulfuric acid / hydrogen peroxide supplying step (S1: S11: S22) for supplying a mixed solution of sulfuric acid and hydrogen peroxide solution to the surface of the substrate, and the ultrasonic sulfuric acid supplying step. And a resist residue removing step (S5: S16: S26) for removing resist residues on the surface of the substrate after the sulfuric acid / hydrogen peroxide supplying step, wherein the ultrasonic sulfuric acid supplying step and the sulfuric acid / hydrogen peroxide supplying step are performed in a sulfuric acid treatment chamber. (1, 51, 71), and the resist residue removing step is performed in the resist residue removing treatment chamber (2), and the substrate after the ultrasonic sulfuric acid supply step and the sulfuric acid / hydrogen peroxide supply step is Substrate conveying step of conveying the acid treatment chamber to the resist residue removal process chamber, characterized in that it further comprises a (S4:: S15 S25), a substrate processing method.
According to this method, a mixed solution of sulfuric acid and hydrogen peroxide can be supplied to the surface of the substrate, and the raw resist on the surface of the substrate is decomposed by supplying sulfuric acid and hydrogen peroxide to the surface of the substrate. And can be removed. At this time, even if the resist on the surface of the substrate has a hardened layer on the surface, the sulfuric acid hydrogen peroxide solution supplied to the surface of the substrate passes through the numerous micropores of the hardened layer and passes through the hardened layer. Can penetrate inside. Therefore, the raw resist can be removed from the surface of the substrate by supplying the sulfuric acid hydrogen peroxide solution regardless of the presence or absence of the hardened layer on the resist surface.
In addition, sulfuric acid with ultrasonic vibration applied to the surface of the substrate can be supplied. Since sulfuric acid to which ultrasonic vibration is applied has large physical energy, even if the resist has a hardened layer on its surface by supplying sulfuric acid to which this ultrasonic vibration has been applied to the surface of the substrate, The hardened layer can be destroyed and removed.
Thus, by supplying the sulfuric acid hydrogen peroxide solution and sulfuric acid to which ultrasonic vibration has been applied back and forth to the substrate, even a resist having a hardened layer on the surface can be removed from the surface of the substrate without ashing. Can be removed. Since resist ashing is unnecessary, the problem of damage to the surface of the substrate due to ashing can be avoided.
In addition, after the treatment using sulfuric acid to which ultrasonic vibration is applied and the treatment using sulfuric acid hydrogen peroxide solution are applied to the substrate, the resist residue can be removed from the surface of the substrate. Thereby, a resist residue can be favorably removed from the substrate after the resist is removed.
Further, the substrate can be directly transferred from the sulfuric acid treatment chamber to the resist residue removal treatment chamber. Therefore, even if the substrate is transferred from the sulfuric acid treatment chamber to the resist residue removal treatment chamber while droplets of sulfuric acid or the like remain attached, sulfuric acid or the like remains outside the sulfuric acid treatment chamber and the resist residue removal treatment chamber. There is no leakage. Therefore, it is not necessary to remove droplets before the substrate is transported from the sulfuric acid treatment chamber to the resist residue removal treatment chamber, and the time required for substrate processing can be shortened.
A twelfth aspect of the present invention is the substrate processing method according to the tenth or eleventh aspect, wherein the sulfuric acid / hydrogen peroxide supply step is performed before the ultrasonic sulfuric acid supply step.
According to this method, sulfuric acid hydrogen peroxide solution can be supplied to the surface of the substrate, and thereafter, sulfuric acid to which ultrasonic vibration is applied can be supplied to the surface of the substrate.

  By supplying the hydrogen peroxide solution to the surface of the substrate, the raw resist (uncured resist) on the surface of the substrate can be decomposed and removed. At this time, even if the resist on the surface of the substrate has a cured layer on the surface, the sulfuric acid hydrogen peroxide solution supplied to the surface of the substrate passes through the numerous micropores of the cured layer to form the cured layer. Penetrate inside. In this case, the raw resist inside the hardened layer is decomposed by the sulfuric acid hydrogen peroxide solution, and only the hollow hardened layer remains on the surface of the substrate. Therefore, the raw resist can be removed from the surface of the substrate by supplying the sulfuric acid hydrogen peroxide solution regardless of the presence or absence of the hardened layer on the resist surface.

Thereafter, sulfuric acid to which ultrasonic vibration is applied is supplied to the surface of the substrate. Even if the resist has a hardened layer on its surface, sulfuric acid to which ultrasonic vibration is applied has a large physical energy, and therefore can be removed by breaking and crushing the hardened layer.
Thereby, even a resist having a hardened layer on the surface can be efficiently removed from the surface of the substrate.

The invention of claim 13 wherein, relative to the surface of the substrate, and further comprising a high-temperature sulfuric acid supply step of supplying a hot sulfuric acid (S21) than the room temperature, according to any of claims 10 to 12 This is a substrate processing method.
According to this method, the same effect as that of the sixth aspect can be obtained .

請 Motomeko 14 the described invention, the ultrasonic sulfuric acid supply step and the SPM supply step is carried out by acid treatment chamber, the resist residue removal step is performed with the resist residue removal process chamber, the resist residue 14. The method according to claim 10 , further comprising a removing step (S <b> 14) of supplying a gas to the surface of the substrate to remove droplets adhering to the surface of the substrate before the removing step. a substrate processing method of crab according.

  According to this method, after the ultrasonic sulfuric acid supply step and the sulfuric acid / hydrogen peroxide supply step, droplets such as sulfuric acid attached to the surface of the substrate are removed by the gas supplied to the surface of the substrate. Since no droplets are attached to the substrate, the substrate can be transferred from the sulfuric acid treatment chamber to the resist residue removal treatment chamber without leaking out of the sulfuric acid treatment chamber and the resist residue removal treatment chamber. .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view showing a layout of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is a single wafer type apparatus used for processing for removing unnecessary resist from the surface of the wafer W after ion implantation processing for injecting impurities into the surface of the wafer W as an example of the substrate. It is.

The substrate processing apparatus includes a processing unit PC in which a transport path TP is formed and an indexer unit ID coupled to the processing unit PC.
A sulfuric acid treatment chamber 1 for removing resist from the surface of the wafer W by supplying SPM (sulfuric acid hydrogen peroxide) and sulfuric acid to which ultrasonic vibration is applied to the surface of the wafer W to the processing unit PC. A resist residue removal treatment chamber 2 for removing resist residues from the wafer W by supplying SC1 (ammonia hydrogen peroxide solution) to the surface of the wafer W after treatment in the sulfuric acid treatment chamber 1 is provided. One sulfuric acid treatment chamber 1 and one resist residue removal treatment chamber 2 are provided on both sides of the conveyance path TP, and are arranged adjacent to each other on each side.

A transport robot TR is disposed on the transport path TP. The transfer robot TR can carry the wafer W into the sulfuric acid treatment chamber 1 by accessing the sulfuric acid treatment chamber 1 with a hand. Further, the transfer robot TR can carry out the wafer W from the resist residue removal processing chamber 2 by accessing the resist residue removal processing chamber 2 with a hand.
On the opposite side of the indexer unit ID from the processing unit PC, a cassette mounting unit CS in which a plurality of cassettes C are arranged side by side is provided. The cassette C can accommodate a plurality of wafers W stacked in multiple stages.

  An indexer robot IR is arranged in the indexer unit ID. The indexer robot IR can access the respective cassettes C arranged on the cassette mounting part CS by hand to take out the wafers W from the cassettes C and store the wafers W in the cassettes C. Further, the indexer robot IR can deliver the wafer W to and from the transfer robot TR.

A dedicated transfer robot RB is disposed between each sulfuric acid treatment chamber 1 and each resist residue removal treatment chamber 2. Each dedicated transfer robot RB is a dedicated robot provided to transfer the processed wafer W in the sulfuric acid processing chamber 1 to the resist residue removal processing chamber 2.
FIG. 2 is a cross-sectional view schematically showing the internal configuration of the sulfuric acid treatment chamber 1.
The sulfuric acid treatment chamber 1 has a plate 4 for frictionally holding and rotating the back surface of the wafer W (the surface opposite to the surface on which the resist is formed), and the surface of the wafer W held on the plate 4. Then, ultrasonic vibration is applied to the surface of the wafer W and the SPM nozzle 5 for supplying SPM prepared by mixing sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide (H ₂ O ₂ ). The ultrasonic sulfuric acid nozzle 6 for supplying the sulfuric acid and the first DIW nozzle 31 for supplying DIW (deionized pure water) to the surface of the wafer W are accommodated.

  FIG. 3 is a plan view of the plate 4. For example, the plate 4 is formed in a disk shape larger in diameter than the wafer W, and is disposed substantially horizontally. As shown in FIG. 3, a ring-shaped contact member 7 is disposed on the upper surface of the plate 4 so that the outer periphery thereof is located slightly inward from the peripheral edge of the plate 4. The contact member 7 is made of, for example, resin, and the surface thereof is subjected to fluororesin processing. When the wafer W is placed on the upper surface of the plate 4, the lower surface (back surface) of the wafer W comes into contact with the upper portion of the contact member 7, and the frictional force generated between the upper portion of the contact member 7 and the lower surface of the wafer W is caused. The wafer W is held on the plate 4. On the periphery of the upper surface of the plate 4, a plurality of arcuate guides 8 (for example, three in FIG. 3) along the periphery of the wafer W are arranged at substantially equal angular intervals. These guides 8 regulate the horizontal movement of the wafer W placed on the upper surface of the plate 4.

  A rotating shaft 10 extending in the vertical direction is coupled to the lower surface of the plate 4. A rotational force is input to the rotary shaft 10 from a plate rotation drive mechanism 11 including a motor and the like. In a state where the wafer W is held in contact with the upper surface of the plate 4 by friction, a rotational force is input to the rotary shaft 10 from the plate rotation drive mechanism 11, so that the wafer W together with the plate 4 is perpendicular to the surface thereof. Can be rotated around.

  Thus, the wafer W is held on the plate 4 by the frictional force generated between the back surface of the wafer W and the upper portion of the contact member 7. For this reason, the contact member 7 does not receive a large reaction force from the wafer W. Therefore, even if the wafer W is held in a high temperature environment of about 200 ° C., for example, the contact member 7 does not have a problem such as deformation. Thereby, the wafer W can be stably held.

  The SPM nozzle 5 is attached to the tip of an SPM arm 12 that extends substantially horizontally above the plate 4. The SPM arm 12 is supported by an SPM arm support shaft 13 extending substantially vertically on the side of the plate 4. An SPM nozzle drive mechanism 14 is coupled to the SPM arm support shaft 13, and the SPM arm support shaft 13 is rotated by the driving force of the SPM nozzle drive mechanism 14 to cause the SPM arm 12 to move. It can be swung. A tip of an SPM supply pipe 16 extending from the mixing valve 15 is connected to the SPM nozzle 5.

  The mixing valve 15 is supplied with a first sulfuric acid supply pipe 17 to which sulfuric acid having a high concentration (96 to 98 wt%) from a sulfuric acid supply source is supplied, and a hydrogen peroxide solution from a hydrogen peroxide solution supply source. A water supply pipe 18 is connected. A first sulfuric acid valve 19 is interposed in the middle of the first sulfuric acid supply pipe 17. A second sulfuric acid supply pipe 25 is branched and connected to the middle portion of the first sulfuric acid supply pipe 17 between the sulfuric acid supply source and the first sulfuric acid valve 19. An overwater valve 20 is interposed in the middle of the overwater supply pipe 18.

The sulfuric acid supplied to the first sulfuric acid supply pipe 17 is temperature-controlled at a predetermined high temperature (for example, 80 ° C. or higher) in the sulfuric acid supply source. On the other hand, the hydrogen peroxide solution supplied to the hydrogen peroxide solution supply pipe 13 has a liquid temperature of about room temperature (about 25 ° C.).
A stirring flow pipe 21 is interposed in the middle of the SPM supply pipe 16. The stirring flow pipe 21 is formed by rotating a plurality of stirring fins made of a rectangular plate with a twist of about 180 degrees around the liquid flow direction in the pipe member around the central axis of the pipe along the liquid flow direction. For example, a product name “MX Series: Inline Mixer” manufactured by Noritake Co., Limited Advance Electric Industry Co., Ltd. can be used. The stirring flow pipe 21 does not necessarily have to be interposed.

When the first sulfuric acid valve 19 and the superwater valve 20 are opened, sulfuric acid and hydrogen peroxide water flow into the mixing valve 15, and they flow through the SPM supply pipe 16 from the mixing valve 15 toward the SPM nozzle 5. The sulfuric acid and the hydrogen peroxide solution are sufficiently stirred by passing through the stirring flow pipe 21 during the flow through the SPM supply pipe 16. By this stirring, the sulfuric acid and the hydrogen peroxide solution sufficiently react to create an SPM containing a large amount of caroic acid (H ₂ SO ₅ ). Then, the SPM is supplied to the SPM nozzle 5 and discharged from the SPM nozzle 5 toward the surface of the wafer W. The SPM is heated to a temperature higher than the liquid temperature of sulfuric acid by reaction heat generated during the reaction between sulfuric acid and hydrogen peroxide solution, and reaches 130 to 145 ° C. on the surface of the wafer W.

  The ultrasonic sulfuric acid nozzle 6 is attached to the tip of an ultrasonic sulfuric acid arm 22 that extends substantially horizontally above the plate 4. The ultrasonic sulfuric acid arm 22 is supported by an ultrasonic sulfuric acid arm support shaft 23 extending substantially vertically on the side of the plate 4. Also, an ultrasonic sulfuric acid nozzle drive mechanism 24 is coupled to the ultrasonic sulfuric acid arm support shaft 23, and the ultrasonic sulfuric acid arm support shaft 23 is rotated by the driving force of the ultrasonic sulfuric acid nozzle drive mechanism 24. Thus, the ultrasonic sulfuric acid arm 22 can be swung.

A tip of a second sulfuric acid supply pipe 25 branched from the first sulfuric acid supply pipe 17 is connected to the ultrasonic sulfuric acid nozzle 6. In the middle of the second sulfuric acid supply pipe 25, a second sulfuric acid valve 27 and a first heater 28 are interposed in this order from the first sulfuric acid supply pipe 17 side.
The first heater 28 is a non-circulating heater (one-pass heater) that heats and raises the temperature of sulfuric acid flowing through the second sulfuric acid supply pipe 25. The second sulfuric acid supply pipe 25 is supplied with about 80 ° C. sulfuric acid from the sulfuric acid supply source through the first sulfuric acid supply pipe 17. The first heater 28 heats the sulfuric acid at about 80 ° C. to raise the temperature to about 200 ° C. Therefore, sulfuric acid at about 200 ° C. is supplied to the ultrasonic sulfuric acid nozzle 6.

  The portion of the second sulfuric acid supply pipe 25 on the downstream side of the first heater 28, the ultrasonic sulfuric acid nozzle 6, and the ultrasonic vibrator 30 described below are heat resistant so that they can withstand about 200 ° C. sulfuric acid. Processing has been applied. Only these members are affected by heat from sulfuric acid at about 200 ° C., and it is sufficient that these members are heat-treated. Thereby, cost reduction can be aimed at.

  Furthermore, the ultrasonic sulfuric acid nozzle 6 incorporates an ultrasonic vibrator 30 that receives an oscillation signal from an ultrasonic oscillator (not shown) and vibrates at a predetermined frequency (for example, 40 kHz to 750 kHz). In a state where sulfuric acid is supplied from the second sulfuric acid supply pipe 25 to the ultrasonic sulfuric acid nozzle 6, the ultrasonic vibrator 30 is vibrated to impart ultrasonic vibration to the sulfuric acid supplied to the ultrasonic sulfuric acid nozzle 6. be able to. Thereby, about 200 degreeC sulfuric acid to which the ultrasonic vibration was provided is discharged from the ultrasonic sulfuric acid nozzle 6.

  The first DIW nozzle 31 is disposed above the plate 4 with the discharge port directed toward the center of the wafer W. A first DIW supply pipe 32 is connected to the first DIW nozzle 31, and DIW as a rinsing liquid from a DIW supply source is supplied through the first DIW supply pipe 32. A first DIW valve 33 for switching between supply and stop of supply of DIW to the first DIW nozzle 31 is interposed in the middle of the first DIW supply pipe 32.

FIG. 4 is a cross-sectional view schematically showing the internal configuration of the resist residue removal processing chamber 2.
The resist residue removal processing chamber 2 has a spin chuck 40 for holding and rotating the wafer W in a horizontal posture, and an SC 1 capable of satisfactorily removing resist residues on the surface of the wafer W held by the spin chuck 40. An SC1 nozzle 41 for discharging and a second DIW nozzle 42 for supplying DIW to the surface of the wafer W held by the spin chuck 40 are provided.

  The spin chuck 40 has a spin shaft 43 that extends substantially vertically, an upper surface that is substantially the same size as the wafer W, a spin base 44 that is mounted substantially horizontally on the upper end of the spin shaft 43, and an upper surface of the spin base 44. And a plurality of (for example, six) clamping members 45 erected on the peripheral edge of each of them. The plurality of sandwiching members 45 are arranged at substantially equal angular intervals on the circumference centered on the central axis of the spin shaft 43, and the wafer W is sandwiched at a plurality of different positions so that the wafer W can be held in a substantially horizontal posture.

  A chuck rotation drive mechanism 46 including a drive source such as a motor is coupled to the spin shaft 43. In a state where the wafer W is held by a plurality of clamping members 45, a rotational force is input from the chuck rotation drive mechanism 46 to the spin shaft 43, and the spin shaft 43 is rotated about its central axis, thereby spinning the wafer W. The base 44 can be rotated around the central axis of the spin shaft 43.

The spin chuck 40 is not limited to such a configuration. For example, the back surface (non-device surface) of the wafer W is vacuum-sucked to hold the wafer W in a horizontal posture, and in that state. A vacuum chuck of a vacuum suction type that can rotate the wafer W held by rotating around a vertical axis may be employed.
The SC1 nozzle 41 is disposed above the spin chuck 40 with the discharge port directed toward the center of the wafer W. An SC1 supply pipe 47 is connected to the SC1 nozzle 41, and SC1 is supplied from the SC1 supply pipe 47. Further, an SC1 valve 48 for switching between supply and stop of supply of SC1 to the SC1 nozzle 41 is interposed in the middle of the SC1 supply pipe 47.

  The second DIW nozzle 42 is disposed above the spin chuck 40 with the discharge port directed toward the center of the wafer W. A second DIW supply pipe 49 is connected to the second DIW nozzle 42 so that DIW from the DIW supply source is supplied through the second DIW supply pipe 49. A second DIW valve 50 for switching between supply and stop of supply of DIW to the second DIW nozzle 42 is interposed in the middle of the second DIW supply pipe 49.

FIG. 5 is a process diagram for explaining the flow of resist removal processing in the substrate processing apparatus.
During the resist removal process, the wafer W after the ion implantation process is carried into the sulfuric acid treatment chamber 1 by the transfer robot TR. The wafer W has not been subjected to a process for ashing the resist, and a hardened layer that has been altered by ion implantation is present on the surface of the resist on the surface thereof.

  The wafer W is held on the upper surface of the plate 4 with its surface facing upward. When the wafer W is held on the plate 4, the plate rotation driving mechanism 11 is driven to start the rotation of the plate 4. As the plate 4 rotates, the wafer W held on the plate 4 is also rotated. As described above, since the plate 4 holds the wafer W by the frictional force generated between the upper portion of the contact member 7 and the lower surface (back surface) of the wafer W, the holding force with respect to the wafer W is not so high. Therefore, the rotational speed of the plate 4 is set to about 100 rpm, for example.

After the rotation of the wafer W is started, the SPM nozzle drive mechanism 14 is controlled to move the SPM nozzle 5 from the standby position set on the side of the plate 4 to above the wafer W held on the plate 4. Then, the first sulfuric acid valve 19 and the overwater valve 20 are opened, and SPM is discharged from the SPM nozzle 5 toward the surface of the rotating wafer W (S1: SPM processing).
In this SPM process, the SPM nozzle drive mechanism 24 is controlled to swing the SPM arm 12 within a predetermined angle range. As a result, the supply position on the surface of the wafer W to which the SPM from the SPM nozzle 5 is guided is in an arc shape intersecting with the rotation direction of the wafer W within a range from the rotation center of the wafer W to the peripheral edge of the wafer W. Move back and forth while drawing a trajectory. Further, the SPM supplied to the surface of the wafer W spreads over the entire surface of the wafer W. Therefore, the SPM is supplied uniformly over the entire surface of the wafer W.

When the SPM is supplied to the surface of the wafer W, the SPM penetrates into the inside of the hardened layer through a large number of fine holes formed in the hardened layer. As a result, the strong oxidizing power of SPM acts on the raw resist (uncured resist) inside the hardened layer, and the raw resist is removed. For this reason, only the hollow hardened layer remains on the surface of the wafer W.
When the SPM supply position is reciprocated a predetermined number of times, the first sulfuric acid valve 19 and the overwater valve 20 are closed, the supply of SPM to the wafer W is stopped, and the SPM nozzle 5 is retracted to the side of the plate 4. Return to position.

  Next, the ultrasonic sulfuric acid nozzle drive mechanism 24 is controlled, and the ultrasonic sulfuric acid nozzle 6 is moved above the wafer W held on the plate 4 from the standby position set on the side of the plate 4. Then, the second sulfuric acid valve 27 is opened, the ultrasonic vibrator 30 is vibrated in response to an oscillation signal from an ultrasonic oscillator (not shown), and ultrasonic vibration is applied from the ultrasonic sulfuric acid nozzle 6 at about 200 ° C. The sulfuric acid is discharged toward the surface of the rotating wafer W (S2: ultrasonic sulfuric acid treatment).

  In this ultrasonic sulfuric acid treatment, the ultrasonic sulfuric acid nozzle drive mechanism 24 is controlled to swing the ultrasonic sulfuric acid arm 22 within a predetermined angular range. As a result, the supply position on the surface of the wafer W from which the sulfuric acid from the ultrasonic sulfuric acid nozzle 6 is guided is within a range from the rotation center of the wafer W to the peripheral edge of the wafer W, and a circle that intersects the rotation direction of the wafer W. Reciprocates while drawing an arcuate trajectory. Further, the sulfuric acid to which the ultrasonic vibration supplied to the surface of the wafer W is applied spreads over the entire surface of the wafer W. Therefore, the sulfuric acid to which ultrasonic vibration is applied is supplied uniformly over the entire surface of the wafer W.

When sulfuric acid to which ultrasonic vibration is applied is supplied to the surface of the wafer W, the cured layer of the resist remaining on the surface of the wafer W is broken and pulverized by the physical energy of the ultrasonic vibration. The pulverized cured layer is removed from the surface of the wafer W together with sulfuric acid.
Further, high-temperature sulfuric acid of about 200 ° C. is discharged from the ultrasonic sulfuric acid nozzle 6 onto the surface of the wafer W. Therefore, of the resist on the surface of the wafer W, the resist that does not react with SPM but reacts with high-temperature sulfuric acid is removed by the high-temperature sulfuric acid of about 200 ° C. discharged from the ultrasonic sulfuric acid nozzle 6.

Next, the first DIW valve 33 is opened while the rotation of the wafer W is continued. Thereby, DIW is discharged from the first DIW nozzle 31 toward the center of the surface of the rotating wafer W (S3: rinse process). The DIW supplied onto the surface of the wafer W spreads over the entire surface of the wafer W, and sulfuric acid adhering to the surface of the wafer W is washed away by the DIW.
When a predetermined time elapses from the start of DIW discharge, the first DIW valve 33 is closed, the supply of DIW to the surface of the wafer W is stopped, and the driving of the plate rotation drive mechanism 11 is stopped, so that the plate 4 And the rotation of the wafer W is stopped.

  Thereafter, in order to remove the resist residue from the surface of the wafer W, the SC1 process in step S5 is performed on the surface of the wafer W. This processing is performed not in the sulfuric acid processing chamber 1 but in the resist residue removal processing chamber 2 that houses the spin chuck 40. After completion of the rinsing process, the wafer W is transferred from the sulfuric acid processing chamber 1 to the resist residue removal processing chamber 2 with the liquid (DIW) attached to the wafer W (S4: wet transfer of the wafer). The wafer W is transferred from the sulfuric acid treatment chamber 1 to the resist residue removal treatment chamber 2 by a dedicated transfer robot RB disposed between the transfer sulfuric acid treatment chamber 1 and the resist residue removal treatment chamber 2.

  Since the dedicated transfer robot RB is disposed between the sulfuric acid processing chamber 1 and the resist residue removal processing chamber 2, the dedicated transfer robot RB moves the wafer W from the sulfuric acid processing chamber 1 to the resist residue removal processing chamber 2. Can be transported directly. Therefore, even if the wafer W is transferred from the sulfuric acid treatment chamber 1 to the resist residue removal processing chamber 2 while the DIW droplets are still attached, the droplets do not leak into the transfer path TP.

  The wafer W carried into the resist residue removal processing chamber 2 by the dedicated transfer robot RB is held by the spin chuck 40 with its surface facing upward. When the wafer W is held by the spin chuck 40, the chuck rotation driving mechanism 46 is driven, and the rotation of the wafer W is started. When the rotation speed of the wafer W reaches, for example, 1500 rpm, the SC1 valve 48 is opened. Thereby, SC1 is discharged from the SC1 nozzle 41 toward the center of the surface of the rotating wafer W (S5: SC1 processing). The SC 1 supplied to the surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, flows on the surface of the wafer W from the central portion toward the peripheral edge, and spreads over the entire surface of the wafer W. The resist residue adhering to the surface of the wafer W is removed by SC1 discharged onto the surface of the wafer W.

In this SC1 process, since SC1 is supplied to the wafer W rotated at a relatively high speed by the spin chuck 40, the SC1 process can be uniformly applied to the entire surface of the wafer W.
Next, when a predetermined time elapses from the start of the SC1 process, the SC1 valve 48 is closed and the supply of DIW to the surface of the wafer W is stopped. Thereafter, while the rotation of the wafer W is continued, the second DIW valve 50 is opened, and DIW is discharged from the second DIW nozzle 42 toward the center of the surface of the wafer W (S6: rinse process). The DIW supplied onto the surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, flows on the surface of the wafer W from the central portion toward the peripheral edge, and the SC1 attached to the surface of the wafer W is DIW. Washed away by.

In this rinsing process, DIW is supplied to the wafer W rotated at a relatively high speed by the spin chuck 40, so that the rinsing process can be uniformly applied to the entire surface of the wafer W.
When a predetermined time has elapsed from the start of the rinsing process, the second DIW valve 50 is closed and the supply of DIW to the surface of the wafer W is stopped. Thereafter, the chuck rotation drive mechanism 46 is controlled, the rotation speed of the wafer W is increased to a predetermined high rotation speed (for example, 2500 to 5000 rpm), and the DIW adhering to the wafer W is shaken off and dried. Drying is performed (step S7). By this spin drying, the DIW adhering to the wafer W is almost completely removed.

When this process is performed for a predetermined time, the chuck rotation driving mechanism 46 is controlled, the rotation of the spin chuck 40 is stopped, and the wafer W is unloaded by the transfer robot TR.
As described above, in this embodiment, SPM is supplied to the surface of the wafer W. In addition, after completion of the supply of SPM, sulfuric acid to which ultrasonic vibration is applied is supplied to the surface of the wafer W.

When SPM is supplied to the surface of the wafer W, the SPM penetrates into the inside of the hardened layer through a large number of fine holes formed in the hardened layer. As a result, the raw resist (uncured resist) inside the hardened layer is removed, and only the hollow hardened layer remains on the surface of the wafer W.
When sulfuric acid to which ultrasonic vibration is applied is supplied to the surface of the wafer W, the cured layer of the resist remaining on the surface of the wafer W is broken and pulverized by the physical energy of the ultrasonic vibration. The The pulverized cured layer is removed from the surface of the wafer W together with sulfuric acid.

Therefore, the resist having the hardened layer can be satisfactorily removed from the surface of the wafer W without ashing the resist. Since resist ashing is unnecessary, the problem of damage to the surface of the wafer W due to ashing can be avoided.
Further, by supplying SC1 to the surface of the wafer W while rotating the wafer W by the spin chuck 40, the SC1 process can be uniformly applied to the entire surface of the wafer W. Further, it is possible to spin dry the wafer W. In this case, the surface of the wafer W after the SC1 process can be satisfactorily dried.

FIG. 6 is a schematic plan view showing a layout of a substrate processing apparatus according to another embodiment (second embodiment) of the present invention. In FIG. 6, parts corresponding to the above-described parts are denoted by the same reference numerals as those parts. Further, in the following, detailed description of each part given the same reference numeral is omitted.
In the configuration shown in FIG. 6, unlike the configuration shown in FIG. 1, two sulfuric acid treatment chambers 51 are arranged on one side of the transport path TP of the processing unit PC, and two resist residues are on the other side of the transport path TP. A removal processing chamber 2 is arranged.

In the configuration shown in FIG. 6, the dedicated transfer robot RB shown in FIG. 1 is not provided. In the configuration of FIG. 6, the transfer robot TR not only carries the wafer W into the sulfuric acid treatment chamber 51 and carries the wafer W out of the resist residue removal treatment chamber 2 but also from the sulfuric acid treatment chamber 51 to the resist residue removal treatment chamber 2. The wafer W is also transferred to the substrate.
FIG. 7 is a cross-sectional view schematically showing the internal configuration of the sulfuric acid treatment chamber 51.

The sulfuric acid treatment chamber 51 shown in FIG. 7 supplies N ₂ gas to the surface of the wafer W held on the plate 4 in addition to the configuration of the sulfuric acid treatment chamber 1 shown in FIG. An air nozzle 52 is provided for removing the liquid droplets (DIW).
The air nozzle 52 is attached to the tip of an air arm 61 that extends substantially horizontally above the plate 4. The air arm 61 is supported by an air arm support shaft 62 extending substantially vertically on the side of the plate 4. An air nozzle drive mechanism 63 is coupled to the air arm support shaft 62, and the air arm support shaft 62 is rotated by the driving force of the air nozzle drive mechanism 63 to swing the air arm 61. It can be made to.

The air nozzle 52 includes a block 53 and an array 54 that is fixed to the lower surface of the block 53 and provided substantially horizontally. The tip of the air arm 61 is coupled to the upper portion of the block 53.
FIG. 8 is a diagram showing a part of the lower surface of the array 54. The array 54 is formed in a long rectangular shape when viewed from the bottom. As shown in FIG. 8, a plurality of discharge ports 56 are formed on the lower surface of the array 54. The discharge ports 56 are formed in a plurality of rows (for example, two rows).

Referring to FIG. 7, a substantially cylindrical supply path 57 communicating with each discharge port 56 is formed in the array 54 so as to penetrate in the thickness direction. Each supply path 57 is connected to one end of a branch supply pipe 58 disposed in the block 53. The other end of each branch supply pipe 58 is connected to the collective supply pipe 59 in the block 53. The collective supply pipe 59 extends outside the block 53 and is connected to an N ₂ supply source. An N ₂ valve 60 is interposed in the middle of the collective supply pipe 59. When the N ₂ valve 60 is opened, N ₂ gas from the N ₂ supply source is supplied to each supply path 57 via the collective supply pipe 59 and each branch supply pipe 58. N ₂ gas supplied to each supply path 57 is discharged from each discharge port 56.

FIG. 9 is a process diagram for explaining the flow of resist removal processing in the substrate processing apparatus according to the second embodiment.
In the resist removal process, the wafer W after the ion implantation process is carried into the sulfuric acid treatment chamber 51 by the transfer robot TR, and the wafer W is placed on the upper surface of the plate 4 with its surface facing upward, as in FIG. Retained. When the wafer W is held on the plate 4, the plate rotation drive mechanism 11 is driven to rotate the plate 4 and the wafer W.

  After starting the rotation of the wafer W, the surface of the wafer W is subjected to SPM processing (step S11). After completion of the SPM process, an ultrasonic sulfuric acid process is performed on the surface of the wafer W (step S12). After the ultrasonic sulfuric acid treatment is completed, the surface of the wafer W is rinsed (step S13). The processes in steps S11, S12, and S13 are the same processes as steps S1, S2, and S3 in FIG.

After completion of the rinsing process, the rotation of the wafer W is continued, the air nozzle driving mechanism 63 is controlled, and the wafer W held on the plate 4 from the standby position where the air nozzle 52 is set to the side of the plate 4 is controlled. Moved upward. Then, the N ₂ valve 60 is opened, and N ₂ gas is discharged from the air nozzle 52 toward the surface of the rotating wafer W (S14: N ₂ supply process).

In this N ₂ supply process, the air nozzle drive mechanism 63 is controlled, and the air arm 61 is swung within a predetermined angle range. As a result, the supply position on the surface of the wafer W to which the N ₂ gas from the air nozzle 52 is guided is in an arc shape that intersects the rotation direction of the wafer W within a range from the rotation center of the wafer W to the peripheral edge of the wafer W. Move back and forth while drawing the trajectory. Therefore, the DIW droplets are uniformly removed over the entire surface of the wafer W.

When a predetermined time has elapsed from the start of the DIW discharge, the N ₂ valve 60 is closed, the supply of N ₂ to the surface of the wafer W is stopped, and the drive of the plate rotation drive mechanism 11 is stopped, so that the plate 4 and the rotation of the wafer W are stopped.
Thereafter, the wafer W is transferred from the sulfuric acid processing chamber 51 to the resist residue removal processing chamber 2 (S15: dry transfer of wafer). The transfer of the wafer W is performed by the transfer robot TR.

Since no DIW droplets adhere to the surface of the wafer W, the wafer W can be transferred from the sulfuric acid treatment chamber 51 to the resist residue removal processing chamber 2 without leaking into the transfer path TP.
The wafer W carried into the resist residue removal processing chamber 2 by the transfer robot TR is held by the spin chuck 40 with its surface facing upward. When the wafer W is held by the spin chuck 40, the rotation of the wafer W is started. After the rotation speed of the wafer W reaches, for example, 1500 rpm, the SC1 process is performed on the surface of the wafer W (step S16). After completion of the SC1 process, a rinse process is performed on the surface of the wafer W (step S17), and after the rinse process is completed, spin dry is performed by shaking off the DIW adhering to the wafer W (step S17). S18). The processes in steps S16, S17, and S18 are the same processes as steps S5, S6, and S7 in FIG.

After the spin drying is completed, the rotation of the spin chuck 40 is stopped and the wafer W is unloaded by the transfer robot TR.
FIG. 10 is a cross-sectional view schematically showing the internal configuration of a sulfuric acid treatment chamber 71 of a substrate processing apparatus according to still another embodiment (third embodiment) of the present invention. In FIG. 10, parts corresponding to the parts described above are given the same reference numerals as those parts. Further, in the following, detailed description of each part given the same reference numeral is omitted.

In the configuration shown in FIG. 10, in addition to the configuration shown in FIG. 2, the sulfuric acid treatment chamber 71 contains sulfuric acid (H ₂ SO ₄₎ whose temperature is adjusted to about 200 ° C. with respect to the surface of the wafer W held on the plate _4. ) Is accommodated.
The high-temperature sulfuric acid nozzle 72 is attached to the tip of a high-temperature sulfuric acid arm 73 extending substantially horizontally above the plate 4. The high-temperature sulfuric acid arm 73 is supported by a high-temperature sulfuric acid arm support shaft 74 extending substantially vertically on the side of the plate 4. A high-temperature sulfuric acid nozzle drive mechanism 75 is coupled to the high-temperature sulfuric acid arm support shaft 74, and the high-temperature sulfuric acid arm support shaft 74 is rotated by the driving force of the high-temperature sulfuric acid nozzle drive mechanism 75, thereby The sulfuric acid arm 73 can be swung.

A tip of a third sulfuric acid supply pipe 76 branched from the second sulfuric acid supply pipe 25 is connected to the high-temperature sulfuric acid nozzle 72. A third sulfuric acid valve 77 and a second heater 78 are interposed in this order from the second sulfuric acid supply pipe 25 side in the middle of the third sulfuric acid supply pipe 76.
The second heater 78 is a non-circulating heater (one-pass heater) that heats and raises the temperature of sulfuric acid flowing through the third sulfuric acid supply pipe 76. The third sulfuric acid supply pipe 76 is supplied with about 80 ° C. sulfuric acid from the sulfuric acid supply source through the first sulfuric acid supply pipe 17 and the second sulfuric acid supply pipe 25. The second heater 78 heats the sulfuric acid at about 80 ° C. to raise the temperature to about 200 ° C. For this reason, about 200 ° C. sulfuric acid is supplied to the high-temperature sulfuric acid nozzle 72.

The portion of the third sulfuric acid supply pipe 76 on the downstream side of the second heater 78 and the high-temperature sulfuric acid nozzle 72 are subjected to heat treatment so as to withstand about 200 ° C. sulfuric acid. Only these members are affected by heat from sulfuric acid at about 200 ° C., and it is sufficient that these members are heat-treated. Thereby, cost reduction can be aimed at.
Further, in the configuration shown in FIG. 10, the second heater 78 shown in FIG. 2 is omitted. Therefore, in this embodiment, about 80 ° C. sulfuric acid is discharged from the ultrasonic sulfuric acid nozzle 6 connected to the tip of the second sulfuric acid supply pipe 25 instead of about 200 ° C. sulfuric acid.

FIG. 11 is a process diagram for explaining the flow of resist removal processing in the substrate processing apparatus according to the third embodiment.
In the resist removal process, the wafer W after the ion implantation process is carried into the sulfuric acid treatment chamber 71 by the transfer robot TR, and the wafer W is placed on the upper surface of the plate 4 with its surface facing upward, as in FIG. Retained. When the wafer W is held on the plate 4, the plate rotation drive mechanism 11 is driven to rotate the plate 4 and the wafer W.

  After the rotation of the wafer W is started, the high-temperature sulfuric acid nozzle drive mechanism 75 is controlled, and the high-temperature sulfuric acid nozzle 72 is moved above the wafer W held on the plate 4 from the standby position set on the side of the plate 4. The Then, the third sulfuric acid valve 77 is opened, and about 200 ° C. sulfuric acid is discharged from the high temperature sulfuric acid nozzle 72 toward the surface of the rotating wafer W (S21: high temperature sulfuric acid treatment). This high-temperature sulfuric acid process is performed as a pre-process before the SPM process in step S22 or the ultrasonic sulfuric acid process in step S23 is performed on the wafer W.

  In the high-temperature sulfuric acid treatment, the high-temperature sulfuric acid nozzle drive mechanism 75 is controlled to swing the high-temperature sulfuric acid arm 73 within a predetermined angle range. As a result, the supply position on the surface of the wafer W from which the sulfuric acid of about 200 ° C. is guided from the high-temperature sulfuric acid nozzle 72 is within the range from the rotation center of the wafer W to the peripheral edge of the wafer W and the rotation direction of the wafer W. Reciprocates while drawing intersecting arc-shaped trajectories. Further, the sulfuric acid at about 200 ° C. supplied to the surface of the wafer W spreads over the entire surface of the wafer W. Therefore, about 200 ° C. sulfuric acid is supplied uniformly over the entire surface of the wafer W.

Further, high-temperature sulfuric acid of about 200 ° C. is discharged from the ultrasonic sulfuric acid nozzle 72 onto the surface of the wafer W. Therefore, of the resist on the surface of the wafer W, the resist that does not react with SPM but reacts with high-temperature sulfuric acid is removed by the high-temperature sulfuric acid of about 200 ° C. discharged from the high-temperature sulfuric acid nozzle 72.
After completion of the high-temperature sulfuric acid treatment, the surface of the wafer W is subjected to SPM treatment (Step S22). After completion of the SPM process, an ultrasonic sulfuric acid process is performed on the surface of the wafer W (step S23). After the ultrasonic sulfuric acid treatment is finished, the surface of the wafer W is rinsed (step S24). The processes in steps S22, S23, and S24 are the same as steps S1, S2, and S3 in FIG.

After completion of the rinsing process, the wafer W is transferred from the sulfuric acid processing chamber 1 to the resist residue removal processing chamber 2 with the DIW droplets attached to the wafer W (S25: wet transfer of wafer).
The wafer W carried into the resist residue removal processing chamber 2 is held by the spin chuck 40 with its surface facing upward. When the wafer W is held by the spin chuck 40, the rotation of the wafer W is started. After the rotation of the wafer W is started, the SC1 process is performed on the surface of the wafer W (step S26). After the completion of the SC1 process, a rinse process is performed on the surface of the wafer W (step S27). After completion of the rinsing process, spin drying is performed in which DIW adhering to the wafer W is shaken off and dried (step S28). The processes in steps S26, S27, and S28 are the same as steps S5, S6, and S7 in FIG.

After the spin drying is completed, the rotation of the spin chuck 40 is stopped and the wafer W is unloaded by the transfer robot TR.
While the three embodiments of the present invention have been described above, the present invention can also be implemented in other forms.
In the second embodiment, the air nozzle 52 has been described as having a plurality of discharge ports formed on the lower surface thereof, but may be formed with only one discharge port.

The air nozzle 52 is not limited to discharging gas (N ₂ ) from its discharge port, and DIW as a rinse liquid may be discharged, for example.
Further, in the above-described three embodiments, it has been described that the wafer W is subjected to the ultrasonic sulfuric acid treatment after the wafer W is subjected to the SPM treatment. However, after the wafer W is subjected to the ultrasonic sulfuric acid treatment, The wafer W may be subjected to SPM processing. Even in such a case, the resist can be removed from the surface of the wafer W.

Further, in the above-described three embodiments, the ultrasonic transducer 30 is not provided in the ultrasonic sulfuric acid nozzle 6 but directly contacts with the sulfuric acid supplied to the surface of the wafer W, and the ultrasonic vibration is applied to the sulfuric acid. May be provided directly.
Furthermore, in the above-described three embodiments, SC1 is used as the resist residue removal processing solution for removing the resist residue, but hot water or choline (TMI) may be used instead.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 is an illustrative plan view showing a layout of a substrate processing apparatus according to a first embodiment. It is sectional drawing which shows the internal structure of the sulfuric acid treatment chamber of the substrate processing apparatus concerning 1st Embodiment illustratively. It is a top view of a plate. It is sectional drawing which shows the internal structure of a resist residue removal processing chamber schematically. It is process drawing for demonstrating the flow of the resist removal process in the substrate processing apparatus concerning 1st Embodiment. It is an illustrative top view which shows the layout of the substrate processing apparatus concerning 2nd Embodiment. It is sectional drawing which shows schematically the internal structure of the sulfuric acid treatment chamber of the substrate processing apparatus concerning 2nd Embodiment. It is a figure which shows a part of lower surface of an array. It is process drawing for demonstrating the flow of the resist removal process in the substrate processing apparatus concerning 2nd Embodiment. It is sectional drawing which shows schematically the internal structure of the sulfuric acid treatment chamber of the substrate processing apparatus concerning 3rd Embodiment. It is process drawing for demonstrating the flow of the resist removal process in the substrate processing apparatus concerning 3rd Embodiment.

Explanation of symbols

1, 51, 71 Sulfuric acid treatment chamber 2 Resist residue removal treatment chamber 4 Plate (substrate holding means)
SPM nozzle
6 Ultrasonic sulfuric acid nozzle 7 Contact member 25 Second sulfuric acid supply pipe (sulfuric acid supply pipe for ultrasonic sulfuric acid nozzle)
28 1st heater (sulfuric acid supply pipe for ultrasonic sulfuric acid nozzle)
40 Spin chuck (substrate rotation means)
52 Air nozzle (removal means)
72 High-temperature sulfuric acid nozzle 76 Third sulfuric acid supply pipe (sulfuric acid supply pipe for high-temperature sulfuric acid nozzle)
78 Second heater (one-pass heater for high-temperature sulfuric acid nozzle)
RB dedicated transfer robot (substrate transfer means)
W Wafer (Substrate)

Claims (14)

A substrate processing apparatus used for removing a resist from a surface of a substrate,
Substrate holding means for holding the substrate;
Sulfuric acid / hydrogen peroxide supply means for supplying a mixture of sulfuric acid and hydrogen peroxide solution to the surface of the substrate held by the substrate holding means;
Ultrasonic sulfuric acid supply means for supplying sulfuric acid to which ultrasonic vibration is applied to the surface of the substrate held by the substrate holding means ;
A sulfuric acid treatment chamber for accommodating the substrate holding means and performing treatment with sulfuric acid to which ultrasonic vibration is applied and a mixed solution of sulfuric acid and hydrogen peroxide;
A resist residue removal treatment chamber for performing a resist residue removal treatment for removing the resist residue from the substrate treated in the sulfuric acid treatment chamber,
The substrate processing apparatus, wherein the resist residue removal processing chamber is provided with substrate rotating means for holding the substrate and rotating it around an axis intersecting the surface of the substrate. The apparatus further comprises a substrate transfer unit that is disposed between the sulfuric acid treatment chamber and the resist residue removal treatment chamber and conveys the substrate from the sulfuric acid treatment chamber to the resist residue removal treatment chamber. 2. The substrate processing apparatus according to 1 . The ultrasonic sulfuric acid supply means includes an ultrasonic sulfuric acid nozzle for discharging sulfuric acid to which ultrasonic vibration is applied toward the surface of the substrate held by the substrate holding means. The substrate processing apparatus according to claim 1 or 2 . 4. The substrate processing apparatus according to claim 3 , wherein the sulfuric acid discharged from the ultrasonic sulfuric acid nozzle is sulfuric acid having a temperature higher than normal temperature. The ultrasonic sulfuric acid supply means heats the sulfuric acid supply pipe for the ultrasonic sulfuric acid nozzle for supplying sulfuric acid to the ultrasonic sulfuric acid nozzle and the sulfuric acid flowing through the sulfuric acid supply pipe for the ultrasonic sulfuric acid nozzle. The substrate processing apparatus according to claim 4 , further comprising a one-pass heater for ultrasonic sulfuric acid nozzles. Toward the surface of the substrate held by said substrate holding means, and further comprising a high-temperature sulfuric nozzle for discharging the hot sulfuric acid from room temperature, the substrate processing according to any one of claims 1 to 5 apparatus. A sulfuric acid supply pipe for a high-temperature sulfuric acid nozzle for supplying sulfuric acid to the high-temperature sulfuric acid nozzle, and a one-pass heater for the high-temperature sulfuric acid nozzle for heating sulfuric acid flowing through the sulfuric acid supply pipe for the high-temperature sulfuric acid nozzle The substrate processing apparatus according to claim 6, wherein: Said substrate holding means is in contact with the back surface of the substrate, by the frictional force generated between the rear surface of the substrate, characterized in that it comprises a contact member for holding a substrate, of claims 1 to 7 The substrate processing apparatus according to any one of the above. By supplying gas to the surface of the substrate held by the substrate holding means, and further comprising a removal means for removing droplets attached to the surface of the substrate, of claims 1 to 8 The substrate processing apparatus according to any one of the above. A substrate processing method used for removing a resist from a surface of a substrate,
An ultrasonic sulfuric acid supply step of supplying sulfuric acid to which ultrasonic vibration is applied to the surface of the substrate;
A sulfuric acid / hydrogen peroxide supply process for supplying a mixture of sulfuric acid and hydrogen peroxide solution to the surface of the substrate ,
A substrate processing method comprising: a resist residue removing step of removing a resist residue on a surface of the substrate after the ultrasonic sulfuric acid supply step and the sulfuric acid / hydrogen peroxide supply step . A substrate processing method used for removing a resist from a surface of a substrate,
An ultrasonic sulfuric acid supply step of supplying sulfuric acid to which ultrasonic vibration is applied to the surface of the substrate;
A sulfuric acid / hydrogen peroxide supply process for supplying a mixture of sulfuric acid and hydrogen peroxide solution to the surface of the substrate,
A resist residue removing step of removing a resist residue on the surface of the substrate after the ultrasonic sulfuric acid supply step and the sulfuric acid / hydrogen peroxide supply step,
The ultrasonic sulfuric acid supply step and the sulfuric acid / hydrogen peroxide supply step are performed in a sulfuric acid treatment chamber, and the resist residue removal step is performed in a resist residue removal treatment chamber,
Said substrate after ultrasonic acid supply step and the SPM supplying step, characterized in that from the sulfuric acid treatment chamber further comprises a substrate transporting step of transporting the resist residue removal process chamber, board processing method. 12. The substrate processing method according to claim 10 or 11, wherein the sulfuric acid / hydrogen peroxide supplying step is performed before the ultrasonic sulfuric acid supplying step. The substrate processing method according to claim 10 , further comprising a high-temperature sulfuric acid supply step of supplying sulfuric acid having a temperature higher than normal temperature to the surface of the substrate. The ultrasonic sulfuric acid supply step and the sulfuric acid / hydrogen peroxide supply step are performed in a sulfuric acid treatment chamber, and the resist residue removal step is performed in a resist residue removal treatment chamber,
14. The method according to claim 10 , further comprising a removing step of supplying a gas to the surface of the substrate to remove droplets adhering to the surface of the substrate before the resist residue removing step. the substrate processing method crab according.

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