JP2005142290A - Apparatus and method for treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the quality of a treatment or the speed of the treatment by suppressing the temperature drop of a treating liquid supplied onto a substrate. <P>SOLUTION: In a method for treating the substrate, a wafer W to be treated is held in a substantially horizontal attitude by a spin chuck 1. The treating liquid is supplied from a treating liquid supply tube 14 to this wafer W through a mixing chamber 34. This treating liquid supply tube 14 has a first treating liquid route 141 and a second treating liquid route 142, and the treating liquids (e.g, a sulfuric acid and a hydrogen peroxide water) passing through them are mixed in the mixing chamber 34. This mixing chamber 34 is formed in a shielding board 10 having a substrate facing surface 36 opposed to the upper surface of the wafer W. A liquid discharge opening 37 is opened at the center of the substrate facing surface 36, and the treating liquid prepared by mixing in the mixing chamber 34 is discharged from this liquid discharge opening 37 to the upper surface of the wafer W. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disk / magnetic disk / magneto-optical disk substrates (glass substrates or ceramic substrates), photomask substrates, etc. It is.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a resist is applied to the substrate surface in order to form various patterns on the substrate. This resist is peeled off later. Conventionally, the resist stripping process for stripping the resist is a batch type in which a plurality of substrates are collectively immersed in a processing liquid for stripping the resist. Things have been applied.
However, in the batch type resist stripping process, the processing takes time and there is a problem in productivity, and with the recent increase in size of the substrate, the uniformity of the processing in each part of the substrate has also become a problem. Therefore, as shown in Patent Document 1 below, a single-wafer type resist stripping apparatus that processes substrates one by one has come to be used.

In the prior art disclosed in Patent Document 1, a substrate is horizontally held by a spin chuck and rotated, and a resist stripping solution is supplied from an upper nozzle toward the rotating substrate. .
JP-A 61-1229829

  However, in the prior art of Patent Document 1, the upper part of the substrate held by the spin chuck is completely open to the atmosphere, and the upper surface, which is the processing target surface of the substrate, is exposed to the downflow in the processing chamber. It becomes a state. Therefore, even if the processing liquid whose temperature is adjusted to a high temperature is discharged from the nozzle, the processing liquid is deprived of heat by the ambient atmosphere close to room temperature, the above-described downflow and the substrate, and the temperature drops quickly on the substrate. As a result, the processing capacity decreases. As a result, the reaction speed of resist stripping slows down, resulting in insufficient resist stripping processing or a long processing time for resist stripping processing.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving the processing quality or the processing speed by suppressing the temperature drop of the processing liquid supplied onto the substrate.

  The invention described in claim 1 for achieving the above object includes a substrate holding rotating means (1, 2) for rotating the substrate (W) while holding it, and a first processing liquid path through which the first processing liquid flows. (141, 15A), the second processing liquid path (142, 17A) through which the second processing liquid exhibiting an exothermic reaction by mixing with the first processing liquid flows, the first processing liquid path, and the above At least one liquid discharge port (37) for supplying the first processing liquid and the second processing liquid that have circulated through the second processing liquid path to the upper surface of the substrate held by the substrate holding and rotating means. 73), and a blocking member (10) having a substrate facing surface (36) facing the upper surface of the substrate held by the substrate holding and rotating means, and capable of moving up and down relative to the substrate holding and rotating means. A substrate processing apparatus including: The alphanumeric characters in parentheses indicate corresponding components in the embodiments described later. The same applies hereinafter.

  According to this invention, the process on the substrate can be advanced by utilizing the heat generated during the mixing of the first treatment liquid and the second treatment liquid. The substrate facing surface of the blocking member is opposed to the upper surface of the substrate held by the substrate holding and rotating means, and the blocking member is moved up and down relative to the substrate holding and rotating means so that the substrate facing surface is By making it sufficiently close to the upper surface, the temperature drop of the processing liquid supplied to the upper surface of the substrate can be suppressed. That is, it is possible to prevent the processing liquid supplied to the upper surface of the substrate from the liquid discharge port from being deprived of heat by the ambient atmosphere or deprived of heat by the downflow, and obtaining the heat from the processing liquid to obtain the temperature. The elevated substrate can be kept warm. Thereby, since the temperature fall of a process liquid can be suppressed on the upper surface of a board | substrate, the process on a board | substrate can be advanced reliably, process quality can be improved, and process speed can be improved.

According to a second aspect of the present invention, the liquid discharge port is a single discharge port that supplies a mixed liquid obtained by mixing the first processing liquid and the second processing liquid to the substrate held by the substrate holding and rotating means. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is (37, 73).
According to this configuration, since the first processing liquid and the second processing liquid are supplied to the upper surface of the substrate in a mixed state, uniform processing can be performed on each portion of the upper surface of the substrate.

In addition to the configuration of the second aspect, the two liquid discharges discharge the first and second processing liquids supplied through the first processing liquid path and the second processing liquid path, respectively, toward the substrate. An exit may be provided. In this case, the first and second processing liquids are mixed on the substrate held by the substrate holding and rotating means.
The invention described in claim 3 is characterized in that the blocking member has a mixing chamber (34) for mixing the first treatment liquid and the second treatment liquid. The substrate processing apparatus according to 1 or 2.

  According to this configuration, since the first processing liquid and the second processing liquid are mixed in the mixing chamber provided inside the blocking member, the two types of processing liquid are uniformly mixed. As a result, high-quality substrate processing becomes possible. Further, since the first processing liquid and the second processing liquid are mixed at a position close to the substrate, the temperature in the period until the mixed liquid is supplied to the substrate after the mixing of the first and second processing liquids. Reduction can be suppressed. Further, since the reaction heat generated when the first and second processing liquids are mixed can be applied to the blocking member to raise the temperature of the blocking member, the temperature of the sequentially supplied processing liquid can be more effectively reduced. Can be suppressed.

Specifically, the invention according to claim 3 is such that the blocking member has a hollow structure, and a mixing chamber to which the first processing liquid path and the second processing liquid path are connected is provided in the blocking member. This can be realized by a configuration provided with a discharge flow path (34a) for communicating with the liquid discharge port.
According to a fourth aspect of the present invention, a mixed liquid of the first processing liquid from the first processing liquid path (15A) and the second processing liquid from the second processing liquid path (17A) is supplied, and this mixing is performed. 4. The distribution pipe according to claim 1, further comprising a stirring pipe with a stirring fin that has a built-in stirring fin for stirring the liquid and supplies the mixed liquid to the liquid discharge port. 5. A substrate processing apparatus. According to this configuration, by allowing the mixed liquid of the first and second processing liquids to flow through the flow pipe with the stirring fin, the mixed liquid can be sufficiently stirred and then supplied from the liquid discharge port to the upper surface of the substrate. The entire upper surface of the substrate can be processed uniformly. Therefore, it is possible to suppress the temperature drop of the processing liquid during the period from the discharge from the liquid discharge port to the substrate. Moreover, since an exothermic reaction due to mixing can be surely generated, substrate processing can be performed with high quality by reliably utilizing the reaction heat.

The flow pipe with agitation fins may be arranged at an arbitrary position close to the substrate to be processed held by the substrate holding and rotating means. However, as in the invention according to claim 5, the blocking member is a hollow shaft (13). In this case, the flow pipe with stirring fin is preferably housed in the rotating shaft.
According to this configuration, since the blocking member is held by the hollow shaft and the flow pipe with the stirring fin is accommodated in the hollow shaft, mixing and stirring of the first and second processing liquids are performed on the upper surface of the substrate. Can be performed at a position close to In addition, the apparatus can be miniaturized by housing the flow pipe with the agitation fin in the hollow shaft.

The blocking member may be rotated using the hollow shaft as a rotation axis. In this case, the hollow shaft as the rotation shaft of the blocking member is rotated by the substrate held and rotated by the substrate holding and rotating means. It is preferable that the blocking member is rotatably held around an axis common to the axis.
According to a sixth aspect of the present invention, in the substrate processing according to any one of the first to fifth aspects, the first treatment liquid is sulfuric acid and the second treatment liquid is hydrogen peroxide. Device.

  A mixed solution of sulfuric acid and hydrogen peroxide solution is suitable for a resist stripping process for stripping a resist formed on a substrate. In this case, reaction heat is generated by mixing sulfuric acid and hydrogen peroxide water. Since the reaction heat can be used to maintain the temperature of the processing liquid on the upper surface of the substrate at a high temperature, the resist on the substrate is used. The peeling process can be progressed reliably and efficiently.

Further, even if a combination of treatment liquids other than this claim 6, for example, a combination of ozone water and sulfuric acid is applied, the resist stripping process on the substrate can be surely and efficiently proceeded using the reaction heat. Can do.
If a combination of hydrochloric acid and hydrogen peroxide solution, hydrofluoric acid and hydrogen peroxide solution, or a combination of ammonia and hydrogen peroxide solution is used, the cleaning process on the substrate can be efficiently advanced using reaction heat. it can.

  According to the seventh aspect of the present invention, there is provided a substrate holding / rotating means (1) for rotating while holding a substrate, a processing liquid path (81) through which a processing liquid for processing the substrate flows, and in the middle of the processing liquid path A heating means (85) for heating the processing liquid flowing through the processing liquid path to a temperature higher than room temperature, and the substrate holding rotation of the processing liquid connected to the processing liquid path and heated by the heating means. A liquid discharge port (82) for supplying to the upper surface of the substrate held by the means, and a substrate facing surface (36) facing the upper surface of the substrate held by the substrate holding and rotating means. The substrate processing apparatus includes a blocking member (10) that can be moved up and down relative to the rotating means.

When this substrate processing apparatus is applied to a resist stripping process for stripping the resist on the substrate surface, as the processing liquid, a resist stripping solution composed of a mixed solution of sulfuric acid and hydrogen peroxide water, or ozone water and sulfuric acid. A resist stripping solution made of a mixed solution or an organic resist stripping solution such as a mixed solution of choline and 2-methoxyethanol can be applied.
In addition, the present invention can be applied to a wide variety of heated treatment liquids. For example, when this substrate processing apparatus is applied to a cleaning apparatus that removes foreign substances on the substrate surface, hydrofluoric acid, sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, ammonia, hydrogen peroxide, ozone water, ionic water, carbonic acid A treatment liquid such as water, reduced water, or pure water, or a solution containing at least one of these treatment liquids can be applied.

  According to this invention, the processing liquid heated by the heating means is supplied to the upper surface of the substrate from the liquid discharge port, and the temperature of the processing liquid on the substrate is lowered by the blocking member having the substrate facing surface facing the upper surface of the substrate. Is suppressed. Thereby, the quality of the substrate processing with the processing liquid can be improved, and the decrease in the reaction speed on the substrate can be suppressed, so that the substrate processing speed can be improved.

The invention according to claim 8 is a resist stripping solution supplying means for supplying, as the processing liquid, a resist stripping solution for stripping the resist on the surface of the substrate held by the substrate holding rotating means to the liquid discharge port The substrate processing apparatus according to claim 1, comprising: (14, 15, 17; 75; 80, 81, 86).
In the case of this configuration, since the temperature of the resist stripping solution does not rapidly decrease on the substrate, the resist stripping process can be progressed reliably and promptly.

A ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the liquid discharge port is opened on a substrate facing surface of the blocking member.
According to this configuration, since the processing liquid can be discharged from a position close to the substrate and supplied to the upper surface of the substrate, immediately after the liquid discharge compared to the case where the liquid discharge port is opened outside the blocking member. Further, the temperature drop of the treatment liquid can be suppressed.

The liquid discharge port preferably discharges the processing liquid on the rotation axis of the substrate held by the substrate holding and rotating means, that is, toward the rotation center of the substrate. Thereby, the processing liquid can be supplied to the entire area of the upper surface of the substrate.
In the ninth aspect, the liquid discharge port is opened on the substrate facing surface. However, the liquid discharge port does not necessarily have to be opened on the substrate facing surface. For example, the substrate is held outside the blocking member. It may be provided so that the processing liquid is discharged from an oblique upper side of the substrate held by the rotating means and supplied to the upper surface of the substrate.

A tenth aspect of the present invention is the substrate processing apparatus of the ninth aspect, further comprising a lower surface liquid discharge port (5a) for supplying a processing liquid to the lower surface of the substrate held by the substrate holding and rotating means. is there.
With this configuration, processing on the upper surface and the lower surface of the substrate can be performed simultaneously. However, in this case, it is preferable to rotate the substrate at a relatively high speed (500 rpm to 1500 rpm) in order to spread the processing liquid to the peripheral edge of the substrate on the lower surface of the substrate.

According to the eleventh aspect of the present invention, there is provided control means for causing the processing liquid to be discharged from the liquid discharge port in a state where the substrate facing surface of the blocking member is brought close to the substrate held by the substrate holding and rotating means. 63. The substrate processing apparatus according to claim 1, further comprising: 63, 66).
According to this configuration, since the processing liquid is discharged in a state where the substrate facing surface of the blocking member is close to the upper surface of the substrate, the temperature of the processing liquid is reduced due to the ambient atmosphere, and the temperature of the processing liquid is reduced due to the downflow. Furthermore, it can suppress effectively.

According to a twelfth aspect of the present invention, the substrate-facing surface of the blocking member is in contact with a liquid film formed by the processing liquid discharged from the liquid discharge port on the substrate held by the substrate holding and rotating means. The substrate processing apparatus according to claim 11, wherein the processing is performed in a liquid-tight state.
According to this configuration, since the substrate facing surface of the blocking member contacts the liquid film formed on the substrate, the processing liquid discharged from the liquid discharge port is supplied onto the substrate without contacting the surrounding atmosphere, and The downflow does not come into contact with the processing liquid on the substrate. Thereby, the temperature drop of the liquid film formed on the upper surface of the substrate can be satisfactorily suppressed, and the substrate processing with the processing liquid can be performed with high quality and at a favorable traveling speed.

According to a thirteenth aspect of the present invention, there is provided a gas supply means for supplying a gas for assisting the removal of the liquid film between the substrate facing surface of the blocking member and the surface of the substrate held by the substrate holding and rotating means. The substrate processing apparatus according to claim 12, further comprising (18, 19, 34, 37; 26, 30, 45, 46, 47; 71, 72, 78).
According to this configuration, by supplying gas from the gas supply means between the substrate-facing surface of the blocking member and the substrate, it is possible to assist the removal of the liquid film, and the liquid tightness between the blocking member and the substrate. The state can be solved smoothly. Thereby, when the blocking member is retracted from the upper surface of the substrate after the substrate processing is completed, it is possible to avoid a situation in which the substrate is attracted to the substrate facing surface of the blocking member and lifted.

According to a fourteenth aspect of the present invention, the control means is in a state where the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding and rotating means to form a liquid-tight state. 14. The substrate processing apparatus according to claim 12, further comprising liquid discharge control means (66) for stopping discharge of the processing liquid from the liquid discharge port.
When a liquid film is formed between the substrate facing surface and the substrate and becomes liquid-tight, the liquid film between them is maintained even if the supply of the processing liquid from the liquid discharge port is stopped. Therefore, the consumption of the processing liquid can be suppressed by stopping the supply of the processing liquid.

According to a fifteenth aspect of the present invention, in the state where the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding and rotating means to form a liquid-tight state, the substrate holding and rotating means The substrate processing apparatus according to claim 12, further comprising substrate rotation control means (61) for stopping the rotation of the substrate by the substrate.
According to this configuration, since centrifugal force does not act on the liquid film between the substrate facing surface and the substrate, if the blocking member is in a non-rotating state, the liquid-tight liquid film between the substrate facing surface and the substrate Since the liquid film is in a stationary state, the liquid film is maintained well, and the substrate can be processed well without using a useless processing liquid.

In addition, the discharge of the treatment liquid from the liquid discharge port may be stopped completely, or the supply of the treatment liquid may be intermittently performed so that the discharge of the treatment liquid is stopped at regular intervals.
Further, instead of stopping the discharge of the processing liquid, the processing liquid is continuously supplied at a very small flow rate of the processing liquid, and the processing liquid between the blocking member and the substrate is replaced with a new liquid as needed. You may keep it.

  The invention according to claim 16 further includes a blocking member rotation drive mechanism (12) for rotating the blocking member, and the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding rotating means. 16. The substrate according to claim 15, further comprising blocking member rotation control means (64) for stopping the rotation of the blocking member by the blocking member rotation drive mechanism in a liquid-tight state formed by liquid. It is a processing device.

  According to this configuration, the rotation driving of the substrate by the blocking member and the substrate holding and rotating means is stopped in a liquid-tight state in which the substrate facing surface of the blocking member is in contact with the liquid film on the substrate. The liquid film between the two can be maintained well. Therefore, since the processing liquid hardly spills out from the substrate, the predetermined processing can be performed without wasting the processing liquid.

  According to a seventeenth aspect of the present invention, there is provided a shutoff member rotation drive mechanism for rotating the shutoff member, and a substrate facing surface of the shutoff member in contact with a liquid film on the substrate held by the substrate holding and rotating means. In a state where the state is formed, the rotation of the blocking member and the rotation of the substrate by the substrate holding and rotating means are controlled so that the substrate held by the substrate holding and rotating means and the blocking member rotate relatively. The substrate processing apparatus according to claim 12, further comprising a relative rotation control means (61, 64).

  According to this configuration, by controlling the rotation of the blocking member and the substrate and applying a relative rotation between the blocking member and the substrate, the liquid-tight state is achieved as in the inventions of claims 12 to 16. The processing liquid on the substrate can be further stirred. Therefore, when a combination of two treatment liquids that exhibit an exothermic reaction is used as the treatment liquid, the reaction heat can be further generated.

In order to apply relative rotation between the blocking member and the substrate, the blocking member and the substrate are rotated in opposite directions, or one of the blocking member and the substrate is rotated and the other is rotated. Even when stopping or rotating the blocking member and the substrate in the same direction, it is sufficient to make a difference between their rotational speeds.
In the above-described claims 12 to 17, the space between the blocking member and the upper surface of the substrate is liquid-tight. However, the space between the blocking member and the upper surface of the substrate is not necessarily liquid-tight. As long as the substrate facing surface of the blocking member is sufficiently close to the upper surface of the substrate, it is possible to sufficiently suppress the temperature drop of the processing liquid on the substrate. In this case, heated (about 100 to 150 ° C.) inert gas is supplied to a gap space (for example, 5 mm or more) between the processing liquid on the substrate and the substrate facing surface for the purpose of preventing the temperature of the processing liquid from decreasing. May be. Of course, even when inert gas is not supplied, the downflow is blocked by the blocking member or the ambient atmosphere is prevented from entering the gap space, so that the temperature drop of the processing liquid on the substrate can be suppressed.

The invention according to claim 18 is the substrate processing apparatus according to any one of claims 1 to 15, further comprising a blocking member rotation drive mechanism (64) for rotating the blocking member.
According to this configuration, since the processing liquid adhering to the substrate facing surface of the blocking member can be removed by rotating the blocking member, for example, the processing liquid and the processing liquid are processed on the substrate to be processed next. Thus, the quality of the substrate can be further improved.

  Further, by combining with the mixing chamber inside the blocking member according to claim 3, mixing and stirring of the processing liquid in the mixing chamber can be further promoted by utilizing the centrifugal force generated by the rotation of the blocking member. Furthermore, if the hollow shaft according to claim 5 is used as the rotating shaft of the shut-off member, the sufficiently mixed liquid is supplied onto the substrate from the center of the shut-off member while the flow pipe with the stirring fin is fixed. Can do. The invention described in claim 19 further includes a blocking member cleaning mechanism (16A, 16B, 37; 16, 73; 82; 4, 5, 5a, 6; 49, 50) for cleaning the blocking member. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus.

With this configuration, since the processing liquid adhering to the substrate facing surface of the blocking member can be removed, the processing liquid and particles resulting from the processing liquid do not fall on the substrate to be processed next, and the substrate Processing quality can be further improved.
The blocking member cleaning mechanism may be configured to also serve as the liquid discharge port. That is, a cleaning liquid (alkali, organic solvent, warm pure water, pure water, etc.) is supplied from the liquid discharge port for discharging the processing liquid toward the substrate to form a liquid film of the cleaning liquid on the substrate, and the liquid film of the cleaning liquid is cut off. The blocking member can be cleaned by bringing the substrate facing surface of the member into contact with the liquid. For example, in this case, the blocking member can be cleaned at the same time when the substrate is rinsed.

Further, for example, even when the substrate holding / rotating means holds the dummy substrate having the same shape as the substrate to be processed during the period when the substrate is not processed, the blocking member can be cleaned in the same manner.
Further, when the lower surface liquid discharge port (5a) for supplying the processing liquid is provided on the lower surface of the substrate held by the substrate holding and rotating means, the lower surface liquid discharge port can be used as a blocking member cleaning mechanism. it can. That is, when the substrate is not held by the substrate holding and rotating means, the cleaning liquid can be discharged from the lower surface discharge port, and the substrate facing surface of the blocking member can be cleaned by this cleaning liquid.

Further, the blocking member cleaning machine mechanism may be configured by a dedicated nozzle (50) that is provided at a position away from the blocking member and the substrate holding and rotating means and supplies the cleaning liquid toward the substrate facing surface of the blocking member. .
According to a twentieth aspect of the present invention, there is provided a blocking member rotation drive mechanism (12) for rotationally driving the blocking member, and a blocking member cleaning mechanism (16A, 16B, 37; 16, 73; for cleaning the blocking member; 82; 4, 5, 5a, 6; 49, 50) and the blocking member cleaning mechanism, the blocking member is cleaned, and then the blocking member rotation drive mechanism is controlled to rotate the blocking member. 18. The substrate processing apparatus according to claim 1, further comprising a blocking member drying control means (60, 64)) that shakes off droplets adhering to the blocking member.

According to this configuration, the liquid droplets adhering to the substrate-facing surface of the blocking member can be shaken off and the blocking member can be dried, resulting in the processing liquid droplets on the substrate to be processed next and the processing liquid. Particles are prevented from falling, and the substrate processing quality can be further improved.
The invention according to claim 21 is characterized in that the blocking member has a built-in heater (38) for heating or keeping the processing liquid supplied on the substrate held by the substrate holding rotating means. The substrate processing apparatus according to claim 1.

With this configuration, the processing liquid on the substrate can be heated or kept warm, so that the processing reaction on the substrate can be progressed reliably and promptly.
The invention according to claim 22 is the substrate processing apparatus according to claim 21, wherein the heater is provided at a position corresponding to at least a peripheral portion of the substrate held by the substrate holding rotation means. .

In this configuration, since the heater is provided corresponding to the peripheral portion of the substrate where the temperature of the processing liquid is likely to decrease due to the influence of the ambient atmosphere and downflow, the temperature distribution of the processing liquid on the substrate is made uniform. It is possible to proceed the processing reaction reliably and promptly at each part of the substrate.
The invention as set forth in claim 23 is characterized in that the substrate holding and rotating means incorporates a heater (40) for heating or holding the held substrate. It is a substrate processing apparatus of description.

Also with this configuration, the temperature of the processing liquid on the substrate can be more reliably maintained, and the same effect as that of the 21st aspect of the invention can be achieved. Further, since the substrate is directly heated from the lower surface, the temperature of the substrate itself can be increased, and the effect that the processing liquid on the substrate can be prevented from being deprived of heat by the substrate is also exhibited.
The invention according to claim 24 is the substrate processing apparatus according to claim 23, wherein the heater is provided at a position corresponding to at least a peripheral portion of the substrate held by the substrate holding rotation means. .

With this configuration, since the temperature of the processing liquid can be favorably maintained in the peripheral portion of the substrate, the reaction of the processing liquid on the substrate can proceed uniformly and quickly as in the case of the invention of claim 22. And high-quality substrate processing becomes possible.
In the invention described in claim 25, a substrate holding step (S1) for holding the substrate substantially horizontally by the substrate holding means (1) and an exothermic reaction by mixing are exhibited on the upper surface of the substrate held by the substrate holding step. A substrate supplied with the processing liquid in parallel with the processing liquid supply step (S2, S4, S5) for supplying the first processing liquid and the second processing liquid, and the substrate holding step and the processing liquid supply step. The substrate processing method includes an upper surface blocking step (S3, S4, S5) in which the upper surface of the substrate is blocked by a blocking member (10) having a substrate facing surface (36) facing the upper surface of the substrate.

By this method, the same effect as that of the first aspect of the invention can be obtained.
The invention described in claim 26 is a substrate holding step for holding the substrate substantially horizontally by the substrate holding means (1), a processing liquid heating step (85) for heating a processing liquid for processing the substrate, and the substrate holding. A process liquid supply process (S2, S4, S5) for supplying the process liquid heated by the process liquid heating process to the upper surface of the substrate held by the process, and the substrate holding process and the process liquid supply process in parallel. And an upper surface blocking step (S3, S4, S5) for blocking the upper surface of the substrate with a blocking member having a substrate facing surface facing the upper surface of the substrate supplied with the processing liquid. It is a processing method.

By this method, the same effect as that of the seventh aspect of the invention can be obtained.
According to a twenty-seventh aspect of the present invention, in the upper surface blocking step, the substrate facing surface of the blocking member is formed on a liquid film formed by the processing liquid supplied by the processing liquid supply step on the substrate held by the substrate holding means. 27. The substrate processing method according to claim 25 or 26, further comprising a step (S4, S5) of contacting the substrate.

By this method, the same effect as that of the twelfth aspect of the invention can be obtained.
According to a twenty-eighth aspect of the present invention, there is provided a gas supply step of supplying a gas for assisting the removal of the liquid film between the substrate facing surface of the blocking member and the surface of the substrate held by the substrate holding means. 28. The substrate processing method according to claim 27, further comprising S6).
By this method, the same effect as that attained by the 13th aspect can be attained.

According to a twenty-ninth aspect of the present invention, in the process liquid supply step, the substrate facing surface of the blocking member is in contact with the liquid film of the process liquid on the substrate held by the substrate holding means to form a liquid tight state. 29. The substrate processing method according to claim 27 or 28, further comprising a step (S4) of stopping the supply of the processing liquid in a state in which the substrate is in a wet state.
By this method, the same effect as that attained by the 14th aspect can be attained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view for explaining the configuration of a substrate processing apparatus according to a first embodiment of the present invention. This substrate processing apparatus is a single-wafer type apparatus capable of peeling and removing an unnecessary resist film from the front surface, end surface and back surface of a silicon semiconductor wafer W (hereinafter simply referred to as “wafer W”) which is an example of a substrate, A spin chuck 1 is provided that holds the wafer W substantially horizontally with its back surface (non-device forming surface) facing downward, and rotates about a vertical axis passing through the substantially center of the held wafer W.

  The spin chuck 1 is coupled to a rotary shaft 3 that is a drive shaft of a rotary drive mechanism 2 including a motor or the like and is rotated. The rotary shaft 3 is a hollow shaft, and a processing liquid supply pipe 4 capable of supplying pure water or resist stripping liquid as a processing liquid is inserted through the rotary shaft 3. A central axis nozzle (fixed nozzle) 5 having a discharge port 5 a is coupled to the upper end of the processing liquid supply pipe 4 at a position close to the center of the lower surface of the wafer W held by the spin chuck 1. From the discharge port 5a of the nozzle 5 toward the center of the lower surface of the wafer W, pure water (DIW (Deionized Water)) or resist stripping solution (in this embodiment, sulfuric acid and hydrogen peroxide water) SPM (sulfuric acid / hydrogen peroxide mixture) can be supplied.

  The treatment liquid supply pipe 4 is supplied with pure water from a pure water supply valve 6 connected to a pure water supply source or a resist stripping liquid from the mixing valve 7 at a required timing. The mixing valve 7 is supplied with sulfuric acid whose temperature is adjusted (for example, 80 ° C.) from the sulfuric acid supply source via the sulfuric acid supply valve 7A, and the hydrogen peroxide solution (for example, room temperature) from the hydrogen peroxide supply source is excessive. It is supplied through a hydrogen oxide water supply valve 7B, and the resist stripping solution is prepared by mixing sulfuric acid and hydrogen peroxide solution in the mixing valve 7.

  A space between the processing liquid supply pipe 4 and the rotating shaft 3 is a process gas supply path 8, and the process gas supply path 8 communicates with a space below the wafer W around the central axis nozzle 5. doing. A process gas (for example, an inert gas such as nitrogen) from a process gas supply source is supplied to the process gas supply path 8 via a process gas supply valve 9.

  Above the spin chuck 1, a disc-shaped blocking plate 10 that faces the wafer W held by the spin chuck 1 is provided horizontally. The blocking plate 10 is formed in a size that can cover almost the entire upper surface of the wafer W, and can be lifted and lowered with respect to the spin chuck 1 by the blocking plate lifting / lowering drive mechanism 11. Further, the shield plate 10 can be rotated in the same direction and the opposite direction to the spin chuck 1 around the same rotation axis as the spin chuck 1 by a motor 12 as a shield plate rotation drive mechanism. ing.

In this embodiment, the motor 12 is configured by a hollow motor, and the blocking plate 10 is coupled to the lower end of the rotating shaft 13 that is rotationally driven by the motor 12.
The rotating shaft 13 is a hollow shaft, and a processing liquid supply pipe 14 is inserted through the rotating shaft 13. A first processing liquid passage 141 and a second processing liquid passage 142 are formed in the processing liquid supply pipe 14. Sulfuric acid from a sulfuric acid supply source can be supplied to the first processing liquid passage 141 from its upper end via a sulfuric acid supply valve 15, and pure water (DIW) from a pure water supply source is supplied to the first treatment liquid passage 141. It can be supplied via the valve 16A. Furthermore, hydrogen peroxide solution from the hydrogen peroxide solution supply source can be supplied to the second treatment liquid passage 142 from its upper end via the hydrogen peroxide solution supply valve 17, and pure water can be supplied from the pure water supply source. Water (DIW) can be supplied through the pure water supply valve 16B.

  A gap between the rotary shaft 13 which is a hollow shaft and the processing liquid supply pipe 14 forms a pressurized gas supply path 18 for supplying a pressurized gas (for example, an inert gas such as clean air or nitrogen). Yes. A pressurized gas from a pressurized gas supply source can be supplied to the pressurized gas supply path 18 via a pressurized gas supply valve 19. The lower end of the processing liquid supply pipe 14 reaches a mixing chamber 34 formed inside the blocking plate 10, and the pressurized gas supply path 18 communicates with the space in the mixing chamber 34.

  The blocking plate 10 includes a disc-shaped upper lid portion 31, a cylindrical annular wall 32 coupled to the lower surface of the peripheral portion of the upper lid portion 31, and a disc-like shape coupled to the lower side of the annular wall 32. And a bottom plate portion 33. As a result, the above-described mixing chamber 34 for mixing the processing liquid is defined inside the blocking plate 10. In the mixing chamber 34, an intermediate plate 35 for receiving the processing liquid supplied from the processing liquid supply pipe 14 is provided at a substantially intermediate position in the height direction.

  At a position relatively above the annular wall 32, an overflow passage 39 having an oblong cross section that allows the mixing chamber 34 to communicate with the external space is formed at a plurality of positions at equal angular intervals along the annular wall 32. Thereby, when an excessive processing liquid is supplied to the mixing chamber 34 due to an error in setting (recipe) of substrate processing, the excessive processing liquid can be discharged through the overflow passage 39. Of course, the overflow passage 39 is not provided, and the mixing chamber 34 may have a sealed structure.

  The lower surface of the bottom plate portion 33 is opposed to the upper surface of the wafer W held by the spin chuck 1 and is a substrate facing surface 36 formed of a flat surface substantially parallel to the wafer W. A liquid for discharging the processing liquid guided from the mixing chamber 34 through the discharge flow path 34 a toward the rotation center of the wafer W at a position on the substrate facing surface 36 corresponding to the position directly above the rotation center of the wafer W. A discharge port 37 is formed. Further, a heater 38 arranged in an annular shape is embedded in the peripheral region of the bottom plate portion 33 so as to face the peripheral region of the wafer W held by the spin chuck 1.

  In the housing 20 that houses the motor 12, a bearing 21 that supports the rotating shaft 13 and a process gas supply mechanism 22 that supplies process gas to the internal space of the blocking plate 10 are provided. The process gas supply mechanism 22 includes a cylindrical labyrinth member 23 having a labyrinth surface opposed to the outer peripheral surface of the rotating shaft 13 on the inner peripheral surface, and a process gas coupled to a process gas supply port 23 a formed in the labyrinth member 23. And an introduction port 24.

On the labyrinth surface of the labyrinth member 23, an annular groove 23b is formed at a position corresponding to the process gas supply port 23a. The seal gas supplied from the seal gas inlet 25 is supplied to the upper and lower labyrinth portions of the annular groove 23b.
A process gas (inert gas such as nitrogen gas, preferably heated gas whose temperature is adjusted to a temperature equal to or higher than room temperature) is supplied to the process gas introduction port 24 from a process gas supply source through a process gas supply valve 26. A seal gas (inert gas or the like) is supplied to the seal gas introduction port 25 from a seal gas supply source via a seal gas supply valve 27.

The internal atmosphere near the lower end of the labyrinth member 23 is sucked and exhausted from the suction port 28 so that the process gas or the seal gas does not leak into the processing chamber.
The rotary shaft 13 has a double shaft structure of an inner shaft 13A and an outer shaft 13B surrounding the inner shaft 13A, and the lower end of the outer shaft 13B is supported by an outward flange 29 formed near the lower end of the inner shaft 13A. Has been. The outer shaft 13B is formed with a process gas passage 30 that opens to a position facing the annular groove 23b of the labyrinth member 23 and extends in the axial direction within the thickness thereof. The process gas passage 30 passes through a through-hole formed in the flange 29 and a through-hole formed in the upper lid portion 31 of the shielding plate 10 and a pipe line 45 erected in the mixing chamber 34. It communicates with a process gas passage 46 formed inside. The process gas passage 46 is connected in the vicinity of the liquid discharge port 37 to a gas discharge port 47 opened so as to aim at the approximate center of the wafer W.

The process gas supplied from the process gas inlet 24 is guided to the process gas passage 30 of the rotary shaft 13 in a state where the process gas is sealed by the seal gas on the labyrinth surface of the labyrinth member 23.
The wafer W to be processed is sandwiched between a plurality of chuck pins 41 (for example, three at regular intervals along the peripheral end surface of the wafer W) provided in the spin chuck 1. The chuck pin 41 includes a support portion 42 that supports the peripheral portion of the lower surface of the wafer W, and a guide pin 43 that contacts the end surface of the wafer W and restricts the horizontal movement of the wafer W.

The spin chuck 1 is provided with a disc-shaped spin base 441 and a chuck pin drive mechanism 44 for operating the chuck pins 41 erected on the spin base 441. In the spin base 441, a heater 40 is embedded in an annular region corresponding to the peripheral portion of the wafer W.
The chuck pin drive mechanism 44 includes, for example, a link mechanism 442 provided inside the spin base 441 and a drive mechanism 443 that drives the link mechanism 442. The drive mechanism 443 includes a rotation-side drive force transmission member 444 that rotates together with the rotation shaft 3, a fixed-side drive force transmission member 446 that is coupled to the outer peripheral side of the rotation-side drive force transmission member 444 via a bearing 445, An elevating drive mechanism 447 for driving a chuck pin for elevating the fixed side driving force transmission member 446 is provided.

  When the fixed drive force transmission member 446 is moved up and down by the chuck pin drive lift drive mechanism 447, the rotation drive force transmission member 444 is moved up and down together with this, and the lift movement is transmitted to the link mechanism 442, so that the chuck pin 41 Converted to motion. Accordingly, by operating the chuck pin driving lift drive mechanism 447, the wafer W can be clamped by the chuck pins 41, or the clamping can be released. Since the fixed side driving force transmission member 446 and the rotation side driving force transmission member 444 are coupled via the bearing 445, even when the spin chuck 1 is rotating, the holding of the wafer W by the chuck pins 41 is released. It is possible to change the clamping position of the wafer W by loosening or loosening.

  With the above configuration, the wafer W can be held on the spin chuck 1 in a substantially horizontal posture and rotated. Then, the processing liquid from the first and second processing liquid passages 141 and 142 is mixed in the mixing chamber 34 in the blocking plate 10, and this mixed liquid is supplied from the liquid discharge port 37 to the upper surface of the wafer W. it can. Further, by supplying pressurized gas from the pressurized gas supply path 18 to the mixing chamber 34 and constantly pressurizing the inside of the mixing chamber 34, the processing liquid in the mixing chamber 34 is smoothly delivered to the liquid discharge port 37. be able to.

  In the mixing chamber 34, the processing liquid from the first and second processing liquid passages 141 and 142 is temporarily received by the upper surface of the intermediate plate 35 and spreads outward by the centrifugal force due to the rotation of the blocking plate 10. Since the liquid flows from the lower side to the liquid discharge port 37, the first and second processing liquids are sufficiently mixed during this period. Therefore, the processing liquid before mixing is not discharged from the liquid discharge port 37, and the sufficiently mixed processing liquid can be supplied to the upper surface of the wafer W.

  When sulfuric acid is supplied to the first processing liquid passage 141 and hydrogen peroxide water is supplied to the second processing liquid passage 142, these are mixed in the mixing chamber 34 to prepare a resist stripping solution (SPM). The resist stripping solution is supplied from the liquid discharge port 37 to the upper surface of the wafer W. As a result, in the mixing chamber 34 and the upper surface of the wafer W, the temperature of the resist stripping solution rises due to the reaction heat accompanying the mixing of sulfuric acid and hydrogen peroxide solution, so that the resist on the surface of the wafer W is surely and promptly obtained. It will be peeled off.

  In addition, in the configuration of this embodiment, since the upper surface of the wafer W is covered by the blocking plate 10, the downflow to the upper surface of the wafer W can be blocked, and the temperature drop of the resist stripping solution on the wafer W can be suppressed. . In particular, if the blocking plate 10 is placed close to the upper surface of the wafer W, it is possible to suppress the resist stripping solution discharged from the liquid discharge port 37 from being cooled by the ambient atmosphere at about room temperature. At this time, when a gap is formed between the resist stripping liquid film formed on the upper surface of the wafer W and the substrate facing surface 36, the process gas passage 30 is heated (for example, 100 to 150 ° C.). By supplying the processed gas to the gap, the temperature drop of the resist stripping solution can be more effectively suppressed.

  Further, the resist plate on the wafer W is peeled by bringing the blocking plate 10 sufficiently close to the upper surface of the wafer W (for example, until the distance between the substrate facing surface 36 and the wafer W is about 0.2 mm to 2 mm). The substrate facing surface 36 may be brought into contact with the liquid film of the liquid so as to be in a liquid-tight state. By doing so, the resist stripping solution discharged from the liquid discharge port 37 does not come into contact with the surrounding atmosphere, so that the temperature drop of the resist stripping solution can be further suppressed.

  In order to eliminate the liquid-tight state between the blocking plate 10 and the wafer W, the pressurized gas supply valve 19 is opened while the supply of the processing liquid from the first and second processing liquid passages 141 and 142 is stopped, and the pressure is increased. The pressurized gas may be supplied into the mixing chamber 34 and the pressurized gas may be discharged from the liquid discharge port 37 toward the upper surface of the wafer W. Alternatively, the process gas supply valve 26 may be opened and the process gas may be discharged from the gas discharge port 47 toward the upper surface of the wafer W. As a result, the liquid film on the wafer W is pushed to the peripheral portion and broken. If the shielding plate 10 is raised in this state, the wafer W is not attracted to the substrate facing surface 36 and lifted.

  Further, the temperature drop of the processing liquid on the wafer W can be further suppressed by energizing the shield plate 10 and the heaters 38 and 40 embedded in the peripheral region of the spin base 441. Both heaters 38 and 40 may be energized, or only one of them may be energized. Further, if the temperature drop of the treatment liquid is sufficiently suppressed, both the heaters 38 and 40 may be de-energized.

  On the other hand, from the lower surface of the wafer W, a resist stripping solution made of a mixed solution of sulfuric acid and hydrogen peroxide solution is supplied from the mixing valve 7, so that the resist stripping process on the upper and lower surfaces of the wafer W can proceed simultaneously. And processing time can be shortened. In the case where the resist stripping process is performed only on the upper surface of the wafer W, the supply of the resist stripping solution from the mixing valve 7 to the lower surface of the wafer W is stopped.

FIG. 2 is a block diagram for explaining an electrical configuration for controlling the substrate processing apparatus. The substrate processing apparatus includes a control device 60 including a microcomputer. The control device 60 controls each part of the substrate processing apparatus according to a predetermined control program.
Specifically, the control device 60 has a function as a spin chuck rotation control unit 61 that controls the rotation of the spin chuck 1 by controlling the rotation drive mechanism 2, and further, a lift drive mechanism for driving the chuck pin By controlling 447, the chuck pin opening / closing control unit 62 that controls opening / closing of the chuck pin 41 is provided. In addition, the control device 60 has a function as a blocking plate position control unit 63 that controls the vertical position of the blocking plate 10 by controlling the blocking plate lifting and lowering drive mechanism 11, and further, the control device 60 is blocked by controlling the motor 12. It has a function as a blocking plate rotation control unit 64 that controls the rotation of the plate 10.

  Furthermore, the control device 60 controls the opening and closing of the pure water supply valve 6, the sulfuric acid supply valve 7A, the hydrogen peroxide solution supply valve 7B, and the process gas supply valve 9, thereby allowing the processing liquid and the processing gas to flow onto the lower surface of the wafer W. It has a function as a lower surface processing fluid supply controller 65 that controls supply. Further, the control device 60 controls the opening and closing of the sulfuric acid supply valve 15, the pure water supply valves 16A and 16B, the hydrogen peroxide solution supply valve 17, the pressurized gas supply valve 19 and the process gas supply valve 26, thereby controlling the wafer W. The upper surface processing fluid supply controller 66 controls the supply of the processing liquid and the processing gas to the upper surface.

In addition, the control device 60 has a function as a heater energization control unit 67 that controls the heat generation by controlling the energization to the heaters 38 and 40. In addition, the control device 60 performs open / close control of the seal gas supply valve 27 and the like.
The controller 60 controls the energization of the heaters 38 and 40 throughout the operation period of the substrate processing apparatus, and the temperature around the wafer W held by the spin chuck 1 is set to a temperature suitable for the resist stripping process. Control. More specifically, temperature sensors (thermocouples or resistance temperature detectors) are provided in the shield plate 10 and the spin base 441, and the temperatures of the shield plate 10 and the spin base 441 are processed based on these detection outputs. What is necessary is just to hold | maintain at the appropriate predetermined temperature (For example, in the case of the resist stripping solution which mixed sulfuric acid and hydrogen peroxide water, 100-150 degreeC).

Further, the control device 60 controls the process gas supply valve 9 and the seal gas supply valve 27 to be kept open throughout the operation of the substrate processing apparatus, and opens the other valves when necessary.
FIG. 3 is a flowchart for explaining an example of the resist stripping process realized by the control of each unit by the control device 60, and shows a processing procedure for one wafer W.

  When an unprocessed wafer W is delivered to the spin chuck 1 by a substrate transfer robot (not shown) (step S1), the control device 60 controls the blocking plate lifting / lowering drive mechanism 11 to control the blocking plate 10. Are retracted above the spin chuck 1 (for example, a position where the substrate facing surface 36 of the blocking plate 10 is about 100 mm above the upper surface of the wafer held by the spin chuck 1). In this state, the wafer W is delivered from the substrate transfer robot to the spin chuck 1. At this time, the control device 60 controls the chuck pin 41 to the open state by controlling the lifting / lowering drive mechanism 447 for driving the chuck pin. When the wafer W is placed on the support portion 42 of the chuck pin 41, the control device 60 controls the chuck pin driving elevating drive mechanism 447 to close the chuck pin 41, and the chuck pin 41 causes the wafer W to close. To pinch.

  Next, when the substrate transfer robot is retracted from above the spin chuck 1, the control device 60 controls the rotation drive mechanism 2 to rotate the spin chuck 1 at a high speed for a predetermined short time (for example, about 1 to 5 seconds) ( For example, about 3000 rpm). At the same time, the control device 60 opens the sulfuric acid supply valve 15 and the hydrogen peroxide solution supply valve 17, thereby allowing the mixing chamber 34 in the blocking plate 10 to pass through the first and second treatment liquid passages 141 and 142. To supply sulfuric acid and hydrogen peroxide solution. Thereby, sulfuric acid and hydrogen peroxide solution are mixed in the mixing chamber 34 to prepare a resist stripping solution, and the resist stripping solution is supplied from the liquid discharge port 37 toward the rotation center of the upper surface of the wafer W. This resist stripper receives a centrifugal force on the wafer W in a high-speed rotation state, spreads to the peripheral edge of the wafer W, and reaches the entire upper surface of the wafer W. Thus, the wetting process (step S2) for making the entire upper surface of the wafer W wet.

  Next, in order to perform a resist stripping process for stripping the resist on the upper surface of the wafer W, the blocking plate 10 is brought close to the wafer W held by the spin chuck 1 (step S3). That is, the control device 60 controls the blocking plate lifting / lowering drive mechanism 11 while keeping the sulfuric acid supply valve 15 and the hydrogen peroxide solution supply valve 17 open, and lowers the blocking plate 10 toward the spin chuck 1. . At the same time, the control device 60 controls the rotational drive mechanism 2 to reduce the rotational speed of the spin chuck 1 to, for example, about 10 to 1000 rpm, preferably about 10 to 20 rpm.

  The blocking plate 10 is lowered to a distance (for example, about 0.5 mm) in which the substrate facing surface 36 is very close to the upper surface of the wafer W held by the spin chuck 1 (step S3). As a result, the substrate facing surface 36 comes into contact with the liquid film of the resist stripping solution formed on the upper surface of the wafer W, and the space between the substrate facing surface 36 of the blocking plate 10 and the upper surface of the wafer W is in a liquid-tight state. . Thereby, the resist stripping solution discharged from the liquid discharge port 37 is supplied to the upper surface of the wafer W without taking heat away from the surrounding atmosphere, and the resist stripping solution after being supplied to the upper surface of the wafer W is Since it is not exposed to the surrounding atmosphere or downflow, the temperature drop can be effectively suppressed.

  The blocking plate 10 may be rotated or non-rotated, but in order to promote mixing of sulfuric acid and hydrogen peroxide solution on the upper surface of the wafer W, the wafer held by the spin chuck 1 is used. The rotation state is preferably controlled by the spin chuck rotation control unit 61 and the shield plate rotation control unit 64 so that rotation relative to W occurs. For example, when the spin chuck 1 has a rotation speed of 10 rpm, the blocking plate 10 may have a rotation speed of 20 rpm in the same direction as the rotation direction of the spin chuck 1, or the rotation of the blocking plate 10 may be stopped. The relative rotational speed difference is 10 rpm).

  At a predetermined timing after the liquid-tight state between the upper surface of the wafer W and the substrate facing surface 36 is formed, the control device 60 rotates the shielding plate 10 for a predetermined rotation time (for example, about 5 to 20). Then, the rotation drive mechanism 2 and the motor 12 are controlled to stop the rotation of the spin chuck 1 and the blocking plate 10 for a predetermined processing time (about 30 to 120 seconds). Thereby, the process for peeling the resist on the upper surface of the wafer W by the liquid film of the resist removing liquid held between the upper surface of the wafer W and the substrate facing surface 36 proceeds (step S4). At this time, the control device 60 controls the chuck pin 41 to the open state by controlling the lifting / lowering drive mechanism 447 for driving the chuck pin. Thereby, it is possible to suppress the resist stripping liquid from flowing out from the liquid film formed on the upper surface of the wafer W through the guide pins 43 of the chuck pins 41, so that the liquid film on the wafer W can be reliably held. .

  During the resist stripping process using the resist stripping solution, it is not always necessary to stop the rotation of the spin chuck 1. For example, the spin chuck 1 may continue to rotate at a low speed of about 10 to 1000 rpm, preferably about 10 to 20 rpm. Even when such low-speed rotation is performed, the resist stripping solution is held in a liquid-tight state between the upper surface of the wafer W and the substrate facing surface 36, so that the liquid film is not broken and the upper surface of the wafer W is not broken. It is possible to maintain a state in which the entire area is covered with the mixed liquid.

  When simultaneously performing the resist stripping process on the lower surface of the wafer W, the control device 60 controls the rotation driving mechanism 2 to rotate the spin chuck 1 at a relatively high rotational speed (for example, 500 to 1500 rpm) and to control the motor 12. Thus, the blocking plate 10 is synchronously rotated in the same direction as the spin chuck 1 at the same speed. At the same time, the control device 60 opens the sulfuric acid supply valve 7A and the hydrogen peroxide solution supply valve 7B. Thus, sulfuric acid and hydrogen peroxide are mixed in the mixing valve 7 to prepare a resist stripping solution, and this resist stripping solution is supplied from the discharge port 5a of the central axis nozzle 5 toward the rotation center of the lower surface of the wafer W. Will be. The resist stripping solution receives a centrifugal force on the lower surface of the wafer W, travels along the lower surface of the wafer W, spreads to the peripheral portion thereof, and processes the entire lower surface of the wafer W.

When the spin chuck 1 and the shielding plate 10 are rotated at a relatively high speed as described above, the sulfuric acid supply valve 15 and the hydrogen peroxide solution supply valve 17 are set in order to maintain the liquid film of the resist stripping solution on the wafer W. It is preferable that the resist stripping solution is kept in the open state or intermittently opened to continue the supply of the resist stripping solution (for example, continuous supply or intermittent supply at a small flow rate).
When the spin chuck 1 is rotated during the resist stripping process, the chuck pin driving lift drive mechanism 447 is operated during the rotation to temporarily release or alleviate the holding of the wafer W by the chuck pins 41. It is preferable that the resist stripping solution is also supplied to the chuck pin contact position on the peripheral end surface of the wafer W. Further, by releasing or relaxing the holding of the chuck pins 41 during the rotation of the spin chuck 1, the wafer W is slid on the spin chuck 1 (substrate sliding), and the wafer W is relatively moved with respect to the spin chuck 1. You may make it rotate. As a result, the clamping position of the chuck pins 41 changes, so that the resist stripping solution can be satisfactorily supplied to the entire peripheral end surface of the wafer W. In order to effectively cause the substrate slip, it is preferable to accelerate or decelerate the rotation of the spin chuck 1 when the chucking of the wafer W by the chuck pins 41 is released or relaxed.

  As described above, on the surface of the wafer W, the resist stripping process using the resist stripping solution composed of a mixed solution of hydrogen peroxide and sulfuric acid proceeds, but high quality and reliable processing is possible due to the reaction heat during mixing. In addition, the resist can be removed in a short time. Moreover, since the mixing of the sulfuric acid and the hydrogen peroxide solution is performed in the mixing chamber 34 in the blocking plate 10 immediately before being supplied to the wafer W, the reaction heat at the time of mixing can be used effectively.

  When the resist stripping process is thus completed, a rinsing step (step S5) is then performed. That is, the control device 60 closes the sulfuric acid supply valve 15 and the hydrogen peroxide solution supply valve 17, and further closes the sulfuric acid supply valve 7A and the hydrogen peroxide solution supply valve 7B. Instead, the control device 60 opens the pure water supply valves 16A, 16B, and 6. Accordingly, pure water is supplied to the mixing chamber 34 via the first and second processing liquid passages 141 and 142, and pure water is supplied from the mixing chamber 34 to the upper surface of the wafer W through the liquid discharge port 37. On the lower surface side of the wafer W, pure water is supplied from the discharge port 5a of the central axis nozzle 5 toward the center of the lower surface of the wafer W.

  At this time, the control device 60 controls the rotation drive mechanism 2 to rotate the spin chuck 1 and controls the motor 12 to similarly rotate the blocking plate 10. The rotation speed at this time is, for example, 10 to 1000 rpm. The blocking plate 10 is held at a processing position close to the upper surface of the wafer W held by the spin chuck 1, and a liquid film of pure water supplied from the liquid discharge port 37 is formed on the upper surface of the wafer W. The upper surface of the wafer W and the substrate facing surface 36 are in a liquid-tight state with a liquid film of pure water interposed therebetween.

  Due to the synchronous rotation of the spin chuck 1 and the blocking plate 10, the pure water between them is sequentially discharged outward in the rotational radial direction, so that the resist stripping solution on the upper surface of the wafer W is promptly replaced with pure water. Thus, the rinsing process can be performed efficiently. At this time, not only the upper surface of the wafer W but also the substrate facing surface 36 of the blocking plate 10 is simultaneously cleaned, and the cleaning of the inside of the mixing chamber 34 also proceeds simultaneously.

During the rotation of the spin chuck 1 for the rinsing process, as in the resist stripping process, the holding of the wafer W by the chuck pins 41 is temporarily released or relaxed, and if necessary, the spin chuck 1 is It is preferable that pure water is supplied to the entire area of the peripheral end surface of the wafer W by generating a substrate slip by accelerating or decelerating the rotation.
The control device 60 supplies pure water to the wafer W for a certain period of time, and then opens the pressurized gas supply valve 19 for a certain period of time. As a result, pressurized gas is discharged from the liquid discharge port 37 and the wafer W is discharged. The liquid film of pure water between the upper surface and the substrate facing surface 36 is pushed to the peripheral portion of the wafer W and removed outward. As a result, the liquid-tight state between the wafer W and the substrate facing surface 36 is eliminated, and the shielding plate 10 can be separated upward (step S6).

In addition to pure water, alkali, organic solvent, and warm pure water (pure water heated to a temperature higher than room temperature) can be considered as the rinsing liquid used in the rinsing process. After use, the final cleaning is always performed with warm pure water or pure water (room temperature).
Next, while the rotation of the spin chuck 1 and the blocking plate 10 is continued, the control device 60 controls the chuck pin driving elevating drive mechanism 447 so that the blocking plate 10 is slightly separated from the upper surface of the wafer W ( The position is raised from the upper surface of the wafer W to a position of about 50 mm (the position where the shielding plate is completely swung). Thereafter, the control device 60 closes the pure water supply valves 16A, 16B, 6 and stops the supply of pure water to the upper surface and the back surface of the wafer W. Then, the control device 60 controls the motor 12 to accelerate the rotation of the blocking plate 10 and increase the rotation speed to, for example, 2000 rpm, and adheres to the lower surface (substrate facing surface 36) of the blocking plate 10. A shake-off drying process for shaking off the pure water is executed (step S6).

  Next, the control device 60 controls the shield plate lifting / lowering drive mechanism 11 to bring the shield plate 10 again close to the upper surface of the wafer W (for example, a distance of about 5 to 10 mm from the upper surface of the wafer W). In this state, the control device 60 drives the rotation drive mechanism 2 and the motor 12 to synchronously rotate the spin chuck 1 and the blocking plate 10 at a high speed (for example, a rotation speed of about 3000 rpm). At the same time, the control device 60 opens the process gas supply valve 26 and discharges the process gas from the gas discharge port 47 toward the upper surface of the wafer W. Thereby, moisture on the upper surface of the wafer W is removed, and the wafer W is dried (step S8). Since the process gas from the process gas supply path 8 is supplied to the lower surface of the wafer W, the drying process on the lower surface side is performed thereby.

  Next, the control device 60 controls the rotation drive mechanism 2 to stop the rotation of the spin chuck 1 and controls the motor 12 to stop the rotation of the blocking plate 10. Further, the control device 60 controls the shield plate lifting drive mechanism 11 to guide the shield plate 10 to the upper retracted position. Next, the control device 60 controls the chuck pin drive lifting drive mechanism 447 to open the chuck pin 41. In this state, the wafer W on the spin chuck 1 is unloaded by the substrate transfer robot (step S9).

  FIG. 4 is a cross-sectional view for explaining the configuration of the substrate processing apparatus according to the second embodiment of the present invention. 4, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as those in FIG. In this embodiment, a flow tube 75 with stirring fins is inserted into the hollow rotary shaft 13, and the rotation center of the upper surface of the wafer W held by the spin chuck 1 is at the lower end of the flow tube 75 with stirring fins. A nozzle 74 having a liquid discharge port 73 for discharging the resist stripping solution toward is connected. The flow pipe 75 with stirring fins is a tube center axis along the liquid flow direction, in which a plurality of stirring fins made of a rectangular plate body each having a twist of about 180 degrees about the liquid flow direction as an axis is provided in the pipe member. For example, a product name “MX Series: Inline Mixer” manufactured by Noritake Co., Limited Advance Electric Industry Co., Ltd. can be used.

  The mixing fin 70 can be supplied with a mixed solution of sulfuric acid and hydrogen peroxide water, and the pure water from the pure water supply valve 16 can be supplied to the flow pipe 75 with stirring fins. Can be done. The mixing valve 70 can supply sulfuric acid from a sulfuric acid supply source (for example, sulfuric acid heated to about 80 ° C.) from the sulfuric acid supply valve 15 via the first treatment liquid passage 15A. The hydrogen peroxide solution from the hydrogen oxide water supply source can be supplied from the hydrogen peroxide solution supply valve 17 through the second treatment liquid passage 17A.

  A space between the inner wall surface of the rotating shaft 13 and the flow pipe 75 with stirring fins is a process gas passage 72, and a process gas supply source 71 is connected to the process gas passage 72 via a process gas supply valve 71. A gas (for example, an inert gas such as nitrogen, preferably a gas heated to a temperature higher than room temperature (for example, 100 to 150 ° C.)) can be supplied. The process gas passage 72 communicates with a gas discharge port 78 that faces the upper surface of the wafer W around the nozzle 74.

In this embodiment, the blocking plate 10 is not provided with a mixing chamber, and is constituted by a disk-like plate-like body 76 in which a through hole exposing the nozzle 74 and the surrounding gas discharge port 78 is formed in the center. Has been. In this plate-like body 76, a heater 38 is embedded in an annular region corresponding to the peripheral region of the wafer W.
In this configuration, the sulfuric acid and the hydrogen peroxide solution are joined by the mixing valve 70 and then guided to the flow pipe 75 with the stirring fin. The sulfuric acid and the hydrogen peroxide solution cannot be mixed sufficiently uniformly depending on the merging at the mixing valve 70, but the mixing of the sulfuric acid and the hydrogen peroxide solution is promoted by passing through the flow pipe 75 with the stirring fin. When the mixed solution is stirred sufficiently uniformly, a chemical reaction (H ₂ SO ₄ + H ₂ O ₂ → H ₂ SO ₅ + H ₂ O) between sulfuric acid and hydrogen peroxide solution further occurs, resulting in strong oxidizing power. A resist stripping solution (SPM) containing H ₂ SO ₅ is generated. At that time, heat is generated due to a chemical reaction (reaction heat), and due to this heat generation, the temperature of the resist stripping solution reaches a high temperature (for example, about 80 ° C. to 150 ° C.) at which the resist film can be satisfactorily stripped from the wafer W. Make sure the temperature rises.

By supplying the resist stripping solution in such a state to the upper surface of the wafer W, the resist on the wafer W can be removed reliably and promptly.
The process gas supply valve 71 is controlled by the control device 60 and is opened when the liquid film between the upper surface of the wafer W and the substrate facing surface 36 on the lower surface of the blocking plate 10 is removed, and from the upper surface of the wafer W. It is also opened during the drying process that removes pure water for rinsing, and is used to maintain the vicinity of the upper surface of the wafer W in an inert atmosphere. Further, when the resist stripping process is performed without bringing the substrate facing surface 36 into contact with the liquid film of the resist stripping liquid on the upper surface of the wafer W, the process gas heated between the liquid film and the substrate facing surface 36 is used. The temperature drop of the resist stripping solution can be suppressed by supplying.

About control of each other part, it is the same as that of the case of the above-mentioned 1st Embodiment, For example, the process shown by the above-mentioned FIG. 3 can be performed.
In the configuration of the second embodiment, since there is no need to incorporate a mixing chamber in the blocking plate 10, the configuration of the blocking plate 10 can be simplified and reduced in size. Further, since the circulation pipe 75 with the agitation fin is disposed in the rotating shaft 13 of the blocking plate 10, the apparatus configuration can be reduced, and the resist stripping solution can be agitated immediately before being supplied to the wafer W. The reaction heat at the time can be used effectively for the processing of the wafer W.

  FIG. 5 is a view for explaining the configuration of a substrate processing apparatus according to the third embodiment of the present invention. In FIG. 5, parts corresponding to the parts shown in FIG. 4 are denoted by the same reference numerals as those in FIG. In this embodiment, a processing liquid supply pipe 80 having a single processing liquid passage 81 formed therein is inserted through the rotary shaft 13 instead of the flow pipe 75 with stirring fins. A nozzle 83 having a liquid discharge port 82 opened at the center of the substrate facing surface 36 of the blocking plate 10 is provided at the lower end of the processing liquid supply pipe 80.

  The processing liquid passage 81 is connected to a resist stripping solution supply source, and a temperature adjusting unit 85 for heating the resist stripping solution and a resist stripping solution supply valve 86 are interposed in the middle thereof. Is controlled by a control device 60 (see FIG. 2). Therefore, by opening the resist stripping solution supply valve 86, a high-temperature resist stripping solution is supplied from the processing solution passage 81 to the nozzle 83, and from the solution discharge port 82 to the center of the wafer W held by the spin chuck 1. Will be supplied.

As the resist stripping solution, a mixed solution of sulfuric acid and hydrogen peroxide solution, a mixed solution of ozone water and hydrogen peroxide, choline and 2-methoxyethanol, or the like can be used.
Also in the configuration of this embodiment, similarly to the first and second embodiments described above, for example, the same process as in the case of FIG. And the temperature drop of the resist stripping solution on the wafer W can be suppressed. However, in this embodiment, it is not necessary to promote the mixing of the resist stripping solution on the upper surface of the wafer W. Therefore, in the process of bringing the substrate facing surface 36 closer to the liquid film on the upper surface of the wafer W, the blocking plate 10 is attached to the spin chuck 1 is preferably rotated in the same direction and at the same speed.

  Although three embodiments of the present invention have been described above, the present invention can be implemented in other forms. For example, in the above embodiment, pure water is supplied to the upper surface of the wafer from the liquid discharge ports 37, 73, 82 provided with the blocking plate 10 at the center position, and the substrate facing surface of the blocking plate 10 is supplied to the pure water liquid film. Although the substrate facing surface 36 is cleaned by contacting the liquid 36, a dedicated nozzle may be provided for cleaning the blocking plate 10. That is, as shown in FIGS. 1, 4, and 5, the lower surface (substrate) of the shielding plate 10 is seen from a height that is on the side of the shielding plate 10 in plan view and below the uppermost position of the shielding plate 10. A blocking plate cleaning nozzle 50 for supplying the cleaning liquid toward the facing surface 36) may be provided. The blocking plate cleaning nozzle 50 may be supplied with the cleaning liquid from the cleaning liquid supply source via a cleaning liquid supply valve 49 (see also FIG. 2) controlled by the control device 60. As the cleaning liquid, a liquid that can remove the processing liquid adhering to the substrate facing surface 36 may be used. Specifically, alkali, an organic solvent, warm pure water (pure water heated to a temperature higher than room temperature), pure water, or the like can be used.

  When a dedicated nozzle for cleaning the shielding plate is provided, a mechanism for flipping up the shielding plate 10 around a horizontal rotation axis is provided, and the lower surface (substrate facing surface) of the shielding plate 10 is inclined with respect to the horizontal plane or is vertical. As a state, the cleaning liquid from the cleaning liquid supply nozzle may be supplied to the substrate facing surface. In this case, since the cleaning liquid supplied to the substrate facing surface 36 of the blocking plate 10 falls due to its own weight, it is possible to suppress the cleaning liquid from remaining on the substrate facing surface 36 of the blocking plate 10.

  In the above embodiment, pure water is supplied between the upper surface of the wafer W to be processed and the substrate facing surface 36 to clean the substrate facing surface 36 of the blocking plate 10. A blocking wafer 10 may be cleaned by holding a dummy wafer different from the wafer to be processed and forming a pure water liquid film between the upper surface of the dummy wafer and the substrate facing surface 36. When cleaning the shielding plate 10, by energizing the built-in heater 38, crystallization and adhesion of resist residues inside or outside the shielding plate 10 can be suppressed to a minimum. Can be satisfactorily performed.

  Furthermore, it is good also as a structure which cleans the board | substrate opposing surface of the shielding board 10 using the central axis nozzle 5 which opposes the lower surface of the wafer W. FIG. That is, for example, by providing a translation mechanism or a swinging mechanism for moving the blocking plate 10 in the horizontal direction with respect to the central axis nozzle 5, the substrate of the blocking plate 10 is washed by the cleaning liquid (pure water) discharged from the discharge port 5a. If the opposing surface 36 is scanned, the cleaning can be performed. Further, instead of providing the translation mechanism or the swing mechanism as described above, the blocking plate 10 can be cleaned by providing the central axis nozzle 5 with an inclined liquid discharge path for discharging the processing liquid obliquely upward. Is possible. In other words, if the cleaning liquid discharged from the inclined liquid discharge path reaches the outer side of the central through hole of the blocking plate 10, the cleaning liquid is removed from the substrate facing surface 36 by rotating the blocking plate 10. Can reach the whole area.

In the above embodiment, the motor 12 for rotating the blocking plate 10 is provided. However, the blocking plate 10 may be provided in a non-rotating state without providing the motor 12.
In the above-described embodiment, the spin chuck 1 including the three chuck pins 41 that can be opened and closed while the spin chuck 1 is rotating has been illustrated. However, for example, there are two similar sets of three chuck pins. A spin chuck that can open and close the two sets of chuck pins independently may be used. In this case, the wafer W is sandwiched by three chuck pins in one group, and then the intermediate state in which the wafer W is sandwiched by a total of six chuck pins in both groups, and then the other group has three. By switching to a state in which the wafer W is held by the chuck pins, the contact position of the chuck pins with respect to the wafer W can be changed. In this case, since the state in which the wafer W is unpinned does not occur, the holding position can be changed while reliably holding the wafer W even during rotation.

  Furthermore, it is not always necessary to use a spin chuck that can ease or release the holding of the wafer W during rotation. For example, a spin chuck in which the chuck pin can be opened by operating a lever provided outside the spin chuck while the spin chuck is stationary may be used. In this case, when the substrate facing surface 36 of the blocking plate 10 is brought into contact with the processing liquid on the upper surface of the wafer W, the rotation of the spin chuck is stopped and the chuck pins are opened, so that the periphery of the wafer W is increased. Processing with the processing liquid can be performed on the entire end face.

In the above embodiment, the substrate processing using the resist stripping solution is taken as an example, but the processing solution applicable in the present invention includes an etching solution, a cleaning solution, a polymer removing solution, a developing solution, and the like.
In addition, various design changes can be made within the scope of matters described in the claims.

It is sectional drawing for demonstrating the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a block diagram for demonstrating the electrical structure for control of said board | substrate processing apparatus. It is a flowchart for demonstrating an example of a resist peeling process. It is sectional drawing for demonstrating the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is sectional drawing for demonstrating the structure of the substrate processing apparatus which concerns on 3rd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Spin chuck 2 Rotation drive mechanism 3 Rotating shaft 4 Process liquid supply pipe 5 Center axis nozzle 5a Discharge port 6 Pure water supply valve 7 Mixing valve 7A Sulfuric acid supply valve 7B Hydrogen peroxide supply valve 8 Process gas supply path 9 Process gas supply Valve 10 Blocking plate 11 Blocking plate raising / lowering drive mechanism 12 Motor 13 Rotating shaft 13A Inner shaft 13B Outer shaft 14 Processing liquid supply pipe 141 First processing liquid path 142 Second processing liquid path 15 Sulfuric acid supply valve 15A First processing liquid path 16 Pure Water supply valve 16A Pure water supply valve 16B Pure water supply valve 17 Hydrogen peroxide water supply valve 17A Second treatment liquid passage 18 Pressurized gas supply passage 19 Pressurized gas supply valve 20 Housing 21 Bearing 22 Process gas supply mechanism 23 Tubular Labyrinth member 23a Process gas supply port 23b Annular groove 24 Process gas inlet 25 Seal gas inlet 26 Process gas supply valve 27 Seal gas supply valve 28 Suction port 29 Flange 30 Process gas passage 31 Upper lid part 32 Annular wall 33 Bottom plate part 34 Mixing chamber 34a Discharge flow path 35 Intermediate plate 36 Substrate facing Surface 37 Liquid discharge port 38 Heater 39 Overflow passage 40 Heater 41 Chuck pin 42 Support part 43 Guide pin 44 Chuck pin drive mechanism 45 Pipe line 46 Process gas passage 47 Gas discharge port 49 Cleaning liquid supply valve 50 Shut off plate cleaning nozzle 60 Controller 61 Spin chuck rotation control unit 62 Chuck pin opening / closing control unit 63 Block plate position control unit 64 Block plate rotation control unit 65 Lower surface processing fluid supply control unit 66 Upper surface processing fluid supply control unit 67 Heater energization control unit 70 Mixing valve 71 Process Gas supply valve 72 Process gas passage 73 Liquid discharge port 74 Nozzle 75 Flow pipe with stirring fin 76 Plate body 78 Gas discharge port 80 Treatment liquid supply tube 81 Process liquid passage 82 Liquid discharge port 83 Nozzle 85 Temperature control unit 86 Resist stripping solution Supply valve 441 Spin base 442 Link mechanism 443 Drive mechanism 444 Rotational drive force transmission member 445 Bearing 446 Fixed drive force transmission member 447 Lifting drive mechanism for chuck pin drive W Wafer

Claims (29)

A substrate holding and rotating means for rotating while holding the substrate;
A first processing liquid path through which the first processing liquid flows;
A second treatment liquid path through which a second treatment liquid exhibiting an exothermic reaction by mixing with the first treatment liquid flows;
For supplying the first processing liquid and the second processing liquid that have flowed through the first processing liquid path and the second processing liquid path to the upper surface of the substrate held by the substrate holding and rotating means. At least one liquid outlet;
A substrate processing apparatus comprising: a blocking member that has a substrate facing surface that faces an upper surface of a substrate held by the substrate holding and rotating means, and that can be moved up and down relative to the substrate holding and rotating means.   The liquid discharge port is a single discharge port for supplying a mixed liquid obtained by mixing the first processing liquid and the second processing liquid to a substrate held by the substrate holding and rotating means. Item 2. The substrate processing apparatus according to Item 1.   3. The substrate processing apparatus according to claim 1, wherein the blocking member has a mixing chamber for mixing the first processing liquid and the second processing liquid.   A mixed liquid of the first processing liquid from the first processing liquid path and the second processing liquid from the second processing liquid path is supplied, and an agitation fin for stirring the mixed liquid is incorporated, and the mixed liquid The substrate processing apparatus according to claim 1, further comprising a flow tube with a stirring fin for supplying the liquid to the liquid discharge port.   5. The substrate processing apparatus according to claim 4, wherein the blocking member is held by a hollow shaft, and the flow pipe with the agitation fin is accommodated in the hollow shaft.   6. The substrate processing apparatus according to claim 1, wherein the first processing liquid is sulfuric acid, and the second processing liquid is hydrogen peroxide. A substrate holding and rotating means for rotating while holding the substrate;
A processing liquid path through which a processing liquid for processing the substrate flows;
A heating means interposed in the middle of the treatment liquid path and heating the treatment liquid flowing through the treatment liquid path to a temperature higher than room temperature;
A liquid discharge port for supplying the processing liquid connected to the processing liquid path and heated by the heating means to the upper surface of the substrate held by the substrate holding rotation means;
A substrate processing apparatus comprising: a blocking member that has a substrate facing surface that faces an upper surface of a substrate held by the substrate holding and rotating means, and that can be moved up and down relative to the substrate holding and rotating means.   A resist stripping solution supplying unit that supplies, as the processing solution, a resist stripping solution for stripping the resist on the surface of the substrate held by the substrate holding and rotating unit with respect to the liquid discharge port. Item 8. The substrate processing apparatus according to any one of Items 1 to 7.   The substrate processing apparatus according to claim 1, wherein the liquid discharge port is opened on a substrate-facing surface of the blocking member.   10. The substrate processing apparatus according to claim 9, further comprising a lower surface liquid discharge port for supplying a processing liquid to the lower surface of the substrate held by the substrate holding rotation means.   2. The apparatus according to claim 1, further comprising control means for discharging the processing liquid from the liquid discharge port in a state where the substrate facing surface of the blocking member is brought close to the substrate held by the substrate holding and rotating means. The substrate processing apparatus according to any one of Items 10 to 10.   Processing is performed in a liquid-tight state by bringing the substrate-facing surface of the blocking member into contact with a liquid film formed by the processing liquid discharged from the liquid discharge port on the substrate held by the substrate holding and rotating means. The substrate processing apparatus according to claim 11.   Gas supply means for supplying a gas for assisting the removal of the liquid film is further included between the substrate facing surface of the blocking member and the surface of the substrate held by the substrate holding and rotating means. The substrate processing apparatus according to claim 12.   The control means is configured to treat the processing liquid from the liquid discharge port in a state where the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding and rotating means to form a liquid-tight state. 14. The substrate processing apparatus according to claim 12, further comprising liquid discharge control means for stopping the discharge of the liquid.   The substrate that stops the rotation of the substrate by the substrate holding and rotating means in a state where the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding and rotating means to form a liquid-tight state. The substrate processing apparatus according to claim 12, further comprising a rotation control unit. Further including a blocking member rotation drive mechanism for rotating the blocking member;
In a state where the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding and rotating means to form a liquid-tight state, the blocking member rotation drive mechanism rotates the blocking member. 16. The substrate processing apparatus according to claim 15, further comprising a blocking member rotation control means for stopping. A blocking member rotation drive mechanism for rotating the blocking member;
The substrate held by the substrate holding and rotating means and the shielding are formed in a state in which the substrate facing surface of the blocking member is in contact with the liquid film on the substrate held by the substrate holding and rotating means to form a liquid-tight state. A relative rotation control means for controlling the rotation of the blocking member and the rotation of the substrate by the substrate holding and rotating means so that the member relatively rotates;
The substrate processing apparatus according to claim 12, further comprising:   The substrate processing apparatus according to claim 1, further comprising a blocking member rotation drive mechanism that rotates the blocking member.   The substrate processing apparatus according to claim 1, further comprising a blocking member cleaning mechanism for cleaning the blocking member. A blocking member rotation drive mechanism for rotating the blocking member;
A blocking member cleaning mechanism for cleaning the blocking member;
A blocking member drying control means for controlling the blocking member rotation drive mechanism after the blocking member cleaning mechanism is cleaned by the blocking member cleaning mechanism and rotating the blocking member so as to shake off droplets attached to the blocking member; The substrate processing apparatus according to claim 1, further comprising:   21. The heater according to claim 1, wherein the blocking member has a built-in heater for heating or keeping a temperature of the processing liquid supplied on the substrate held by the substrate holding and rotating means. Substrate processing equipment.   The substrate processing apparatus according to claim 21, wherein the heater is provided at a position corresponding to at least a peripheral portion of the substrate held by the substrate holding and rotating means.   The substrate processing apparatus according to any one of claims 1 to 22, wherein the substrate holding / rotating means includes a heater for heating or holding the substrate being held.   24. The substrate processing apparatus according to claim 23, wherein the heater is provided at a position corresponding to at least a peripheral portion of the substrate held by the substrate holding and rotating means. A substrate holding step of holding the substrate substantially horizontally by the substrate holding means;
A treatment liquid supply step of supplying a first treatment liquid and a second treatment liquid that exhibit an exothermic reaction by mixing on the upper surface of the substrate held by the substrate holding step;
In parallel with the substrate holding step and the processing liquid supply step, an upper surface blocking step of blocking the upper surface of the substrate with a blocking member having a substrate facing surface facing the upper surface of the substrate supplied with the processing liquid. A substrate processing method. A substrate holding step of holding the substrate substantially horizontally by the substrate holding means;
A treatment liquid heating step for heating a treatment liquid for treating the substrate;
A treatment liquid supply step of supplying the treatment liquid heated by the treatment liquid heating step to the upper surface of the substrate held by the substrate holding step;
In parallel with the substrate holding step and the processing liquid supply step, an upper surface blocking step of blocking the upper surface of the substrate with a blocking member having a substrate facing surface facing the upper surface of the substrate supplied with the processing liquid. A substrate processing method.   The upper surface blocking step includes a step of bringing the substrate facing surface of the blocking member into contact with a liquid film formed by the processing liquid supplied by the processing liquid supply step on the substrate held by the substrate holding means. 27. The substrate processing method according to claim 25 or 26.   The method further comprises a gas supply step of supplying a gas for assisting the removal of the liquid film between the substrate facing surface of the blocking member and the surface of the substrate held by the substrate holding means. Item 27. The substrate processing method according to Item 27.   In the treatment liquid supply step, the treatment liquid is supplied in a state where the substrate facing surface of the blocking member is in contact with the liquid film of the treatment liquid on the substrate held by the substrate holding means to form a liquid-tight state. 29. The substrate processing method according to claim 27 or 28, further comprising a step of stopping the process.

Images