JP5253592B2 - Substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing method. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate etc. are included.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a cleaning process is performed on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device. A substrate processing apparatus for cleaning a substrate includes, for example, a spin chuck that horizontally holds and rotates the substrate, and a cleaning liquid nozzle that supplies a cleaning liquid to the surface of the substrate held by the spin chuck.
By supplying the cleaning liquid from the cleaning liquid nozzle to the vicinity of the rotation center of the surface of the substrate rotated by the spin chuck, the cleaning liquid receives the centrifugal force due to the rotation of the substrate and spreads over the entire surface of the substrate. Thereby, a liquid film of the cleaning liquid covering the entire surface of the substrate is formed, and the cleaning process is performed on the surface of the substrate.

After the cleaning process is performed, the substrate is rotated at a predetermined high rotation speed by a spin chuck, whereby the liquid film of the cleaning liquid is shaken around the substrate to dry the substrate. Specifically, for example, as described in Patent Document 1 below, while supplying drying air from directly above the central portion of the surface (the rotation center and the vicinity thereof), the liquid film is removed from the central portion. The substrate is dried by rotating the substrate at a predetermined high rotation speed.
JP-A-7-29866

  However, when drying air is blown toward the center of the substrate, droplets may remain near the center of rotation of the substrate. When the substrate is rotated and the cleaning liquid adhering to the surface is shaken off, since the centrifugal force hardly acts near the rotation center, the droplets are trapped near the rotation center by the drying air, and easily Cannot be excluded. For this reason, the substrate may be dried while the cleaning liquid droplets remain on the surface of the central portion of the substrate, resulting in poor drying such as a watermark on the surface of the central portion of the substrate. In particular, a substrate having a hydrophobic surface such as a substrate that has been treated with hydrofluoric acid or a substrate having a low-k film formed on the surface is prone to dry defects.

  The present invention has been made under such a background, and an object thereof is to provide a substrate processing method capable of uniformly drying a substrate while suppressing the occurrence of poor drying.

  In order to achieve the above object, the invention according to claim 1 is characterized in that the processing liquid is supplied from the processing liquid nozzle (3) to the main surface of the substrate (W) held by the substrate holding means (2). A liquid film forming step for forming a liquid film of a treatment liquid over the entire surface, and supplying an inert gas from a gas nozzle (4) to the main surface on which the liquid film is formed, thereby reducing the peripheral edge of the main surface A liquid film removal region forming step of forming a liquid film removal region (T) from which the liquid film has been removed in a region including the liquid film removal region forming step; While supplying, the gas nozzle moving means (17) moves the gas nozzle to move the liquid film removal region from the region including the peripheral edge of the main surface, and the center of the main surface in the liquid film removal region (O) to place the liquid film removal region A step, after the liquid film removal area moving process, by eliminating the processing solution from the main surface by expanding the liquid-film removal areas and a substrate drying step of drying the substrate, a substrate processing method.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this invention, after supplying the processing liquid to the main surface of the substrate held by the substrate holding means to form a liquid film of the processing liquid over the entire main surface, the main surface on which the liquid film is formed In addition, an inert gas is supplied from the gas nozzle to form a liquid film removal region in which the liquid film is removed in a region including the periphery of the main surface.

  Then, after the liquid film removal region is formed, the inert gas from the gas nozzle to the principal surface is moved by moving the gas nozzle by the gas nozzle moving means while supplying the inert gas from the gas nozzle to the principal surface. The supply position is moved, and the liquid film removal region is moved from the region including the peripheral edge of the main surface to the center of the main surface (the center and the vicinity thereof). Thereby, the center is arranged in the liquid film removal region.

  The liquid film removal region is formed in advance in a region including the periphery of the main surface, and is supplied to the main surface by moving from the region including the periphery of the main surface to a position including the center of the main surface. It is possible to suppress or prevent the processing liquid on the main surface from being trapped by the inert gas. Even if droplets are generated on the main surface of the substrate when the inert gas is discharged, the liquid is absorbed into the liquid film on the main surface in the process of moving through the liquid film removal region. Therefore, it is possible to prevent the liquid droplets on the main surface from being evaporated as they are and causing poor drying.

  After the liquid film removal region is moved, the substrate can be dried by removing the processing liquid from the main surface by enlarging the liquid film removal region. At this time, the liquid film removal region is disposed in the central portion, and no processing liquid is present in the liquid film removal region. Accordingly, it is possible to reliably remove the processing liquid from the central portion, and it is possible to suppress the occurrence of poor drying in the liquid film removal region. Thereby, the said board | substrate can be dried uniformly, suppressing that the dry defect arises in the said main surface.

  Here, the peripheral edge is usually a non-device forming region where no device is formed. Further, in the liquid film removal region forming step, a treatment liquid droplet may be formed on the main surface by supplying an inert gas to the main surface. This droplet is absorbed by the liquid film on the main surface as the liquid film removal region moves, but a droplet is generated even if temporarily, and when this begins to evaporate in the droplet removal region, May result in poor drying. Therefore, by forming the liquid film removal region on the periphery first, it is possible to position the poorly dried portion in the non-device formation region. Therefore, in the device formation region which is an inner region of the non-device formation region. It is possible to prevent poor drying and to suppress or prevent deterioration of the characteristics of the device formed in this device formation region.

The invention according to claim 2 is the substrate processing method according to claim 1, wherein in the liquid film removal region forming step and the liquid film removal region moving step, a processing liquid is supplied from the processing liquid nozzle to the main surface. .
According to this invention, in the liquid film removal region forming step and the liquid film removal region moving step, the processing liquid is supplied from the processing liquid nozzle to the main surface. Therefore, a large amount of the processing liquid is maintained on the main surface, and a region other than the liquid film removal region on the main surface can be maintained covered with the liquid film of the processing liquid. Therefore, it is possible to suppress the drying failure caused by evaporation of the processing liquid in the region.

According to a third aspect of the present invention, in the liquid film removal region forming step and the liquid film removal region moving step, the treatment liquid is moved to the peripheral portion of the main surface farthest from the liquid film removal region by the treatment liquid nozzle moving means. The substrate processing method according to claim 2, wherein a nozzle is arranged.
According to this aspect of the invention, the processing liquid nozzle is moved by the processing liquid nozzle moving means, so that the processing liquid nozzle is arranged at the peripheral portion of the main surface farthest from the liquid film removal region. Thereby, it is possible to suppress or prevent the processing liquid supplied from the processing liquid nozzle to the main surface from reaching the liquid film removal area and forming droplets of the processing liquid in the liquid film removal area. It is possible to suppress poor drying due to such droplets.

According to a fourth aspect of the present invention, in the liquid film removal region forming step and the liquid film removal region moving step, the treatment liquid nozzle is moved by the treatment liquid nozzle moving means, and the treatment liquid nozzle is moved to the main surface. The substrate processing method according to claim 3, wherein a supply position of the processing liquid is arranged at a peripheral edge portion of the main surface farthest from the liquid film removal region.
According to this invention, the supply position of the processing liquid from the processing liquid nozzle to the main surface is disposed at the peripheral edge of the main surface farthest from the liquid film removal region, so that the processing liquid nozzle can It is possible to prevent the processing liquid supplied to the main surface from reaching the liquid film removal region. Thereby, it is possible to suppress the occurrence of poor drying in the liquid film removal region.

Specifically, it is preferable that the processing liquid from the processing liquid nozzle is deposited on the main surface of the substrate so as to avoid a region through which the liquid film removal region passes on the main surface of the substrate.
According to a fifth aspect of the present invention, the position of the processing liquid nozzle with respect to the main surface in the liquid film removal region forming step and the liquid film removal region moving step is determined by the processing liquid nozzle moving means in the liquid film forming step. It is a substrate processing method as described in any one of Claims 1-4 made to approach the said main surface rather than the position of a process liquid nozzle.

  According to this invention, the momentum of the processing liquid from the processing liquid nozzle to the main surface in the liquid film removal region forming step and the liquid film removal region moving step by bringing the processing liquid nozzle close to the main surface, It can be weaker than the momentum in the liquid film forming step. Accordingly, it is possible to prevent the drying of the liquid film removal region from occurring in the liquid film removal region by preventing the droplets of the treatment liquid supplied from the treatment liquid nozzle to the main surface from reaching the liquid film removal region.

According to a sixth aspect of the present invention, the supply flow rate of the processing liquid from the processing liquid nozzle to the main surface in the liquid film removal region forming step and the liquid film removal region moving step is more than the supply flow rate in the liquid film formation step. The substrate processing method according to claim 1, wherein the substrate processing method is also reduced.
According to this invention, by reducing the supply flow rate of the processing liquid from the processing liquid nozzle to the main surface, the main surface from the processing liquid nozzle in the liquid film removal region forming step and the liquid film removal region moving step The momentum of the treatment liquid can be weaker than the momentum in the liquid film forming step. Thereby, it can suppress or prevent that the process liquid splash supplied and bounced to the main surface of a board | substrate reaches | attains the said liquid film removal area | region, and, thereby, a dry defect can be suppressed.

The invention according to claim 7 is the substrate processing method according to claim 1, wherein a processing liquid is not supplied from the processing liquid nozzle to the main surface during the liquid film removal area forming step and the liquid film removal area moving step. It is.
According to this invention, in the liquid film removal region forming step and the liquid film removal region moving step, the processing liquid is not supplied from the processing liquid nozzle to the main surface. Therefore, it is possible to prevent the processing liquid from entering the liquid film removal region. Thereby, it can suppress or prevent that the droplet of a process liquid forms in the said liquid film removal area | region. Therefore, it is possible to suppress poor drying due to such droplets.

  In the liquid film removal region forming step and the liquid film removal region moving step, the substrate is rotated at a low rotation speed (for example, 50 rpm or less, preferably 10 rpm or less), or the substrate is maintained in a stopped state. It is preferable. At this time, since the centrifugal force hardly acts on the liquid film on the main surface, the processing liquid on the main surface hardly scatters to the side of the substrate. Therefore, dissipation of the processing liquid from the main surface can be suppressed, and the disappearance of the liquid film from a region other than the liquid film removal region can be suppressed. Thereby, it is possible to suppress or prevent the processing liquid supplied from the processing liquid nozzle from reaching the liquid film removal region and forming droplets of the processing liquid in the liquid film removal region.

  According to an eighth aspect of the present invention, after the liquid film removal region moving step, the gas nozzle moving means retracts the gas nozzle from the substrate, and then the counter member moving means (29) moves the counter member (24). As a result, the opposing surface (23) of the opposing member is disposed opposite to the main surface, and an inert gas is discharged from a gas discharge port (27) formed in the opposing surface, and the opposing surface is the main surface. It is a substrate processing method as described in any one of Claims 1-7 which performs the said substrate drying process in the state arrange | positioned facing the surface.

  According to this invention, after the liquid film removal region moving step, the gas nozzle is moved by the gas nozzle moving means in a state where the supply of the inert gas from the gas nozzle to the main surface is stopped, and the gas nozzle is moved to the substrate. Evacuate from. Then, after the gas nozzle is retracted, the opposing member is moved by the opposing member moving means so that the opposing surface is disposed opposite to the main surface, and an inert gas is discharged from the gas discharge port. Thereby, while suppressing that the atmosphere of the circumference | surroundings approachs into the space between the said opposing surface and the said main surface, the said space can be made into inert gas atmosphere.

Further, the substrate drying step is performed in a state where the facing surface is disposed to face the main surface and the space is set to an inert gas atmosphere, and thus the main surface is dried while being protected by the inert gas. Be made. Therefore, it is possible to reliably suppress the occurrence of poor drying on the main surface.
In order to maintain the liquid film removal region on the main surface of the substrate while the supply of the inert gas from the gas nozzle is stopped, the substrate is rotated to apply a centrifugal force to the liquid film outside the liquid film removal region. It is preferable. Further, instead of rotating the substrate, an inert gas is discharged from the gas discharge port provided in the facing member toward the main surface of the substrate to prevent the liquid film from entering the liquid film removal region. May be.

  According to the ninth aspect of the present invention, in the liquid film removal region moving step, the gas nozzle and the opposing member (32) integrated with the gas nozzle are integrally moved by the gas nozzle moving means. The substrate drying step is performed in a state in which the opposing surface (31) of the opposing member is arranged to face the main surface while the center is arranged, and the facing surface is arranged to face the main surface. Item 8. The substrate processing method according to any one of Items 1 to 7.

  According to the present invention, the gas nozzle and the opposing member are moved together by the gas nozzle moving means, thereby moving the supply position of the inert gas from the gas nozzle to the main surface to enter the liquid film removal region. The opposed surface is arranged to face the main surface while the center is arranged. That is, since the gas nozzle and the opposing member are integrated, the movement of the liquid film removal region and the opposing arrangement of the opposing surface to the main surface can be performed simultaneously. Therefore, after the liquid film removal region moving step, the substrate drying step can be immediately performed in a state where the opposing surface is opposed to the main surface, while suppressing an increase in processing time, It is possible to reliably suppress the occurrence of poor drying on the main surface.

A tenth aspect of the present invention is the substrate processing method according to any one of the first to ninth aspects, wherein the substrate drying step is performed while supplying an inert gas from the gas nozzle to the main surface.
According to the present invention, the main surface can be dried while protecting the main surface by the inert gas discharged from the gas nozzle or the gas discharge port, so that it is ensured that poor drying occurs on the main surface. Can be suppressed.

According to an eleventh aspect of the present invention, in the substrate drying step, the inert gas supplied to the main surface includes an organic solvent vapor having higher volatility than pure water. This is a substrate processing method.
According to the present invention, for example, when a liquid film of a treatment liquid containing pure water is formed on the main surface, the substrate drying step does not include a vapor of an organic solvent that is more volatile than the pure water. By supplying the active gas to the main surface, the substrate can be dried while replacing the treatment liquid adhering to the main surface with the organic solvent while protecting the main surface with the inert gas. Thereby, it is possible to reliably prevent the main surface from being dried and to quickly dry the main surface.

  According to a twelfth aspect of the present invention, in the substrate drying step, the substrate held by the substrate holding means is rotated at a predetermined rotation speed by the substrate rotating means (8), and the substrate is not directed from the gas nozzle toward the main surface. By moving the gas nozzle by the gas nozzle moving means while discharging the active gas, the supply position of the inert gas from the gas nozzle to the main surface is moved from the center toward the periphery of the main surface. The substrate processing method according to claim 1, wherein the substrate is dried.

  According to this invention, the substrate held by the substrate holding means is rotated at a predetermined rotation speed by the substrate rotating means, whereby centrifugal force due to the rotation of the substrate is applied to the liquid film formed on the main surface. Make it work. As a result, the annular liquid film in which the liquid film removal region is disposed is driven to the periphery of the main surface and is swung around the substrate. That is, as the liquid film is driven to the peripheral edge of the main surface, the liquid film removal region is enlarged toward the peripheral edge, and the processing liquid is excluded from the entire area of the main surface.

  On the other hand, as the substrate is rotated by the substrate rotating means, the gas nozzle moving means is controlled to move the gas nozzle, so that the supply position of the inert gas from the gas nozzle to the main surface is directed from the center to the peripheral edge. To move. Thereby, the said liquid film removal area | region can be expanded rapidly and the said board | substrate can be dried in a shorter time.

It is an illustration figure for demonstrating the structure of the substrate processing apparatus for enforcing the substrate processing method which concerns on 1st Embodiment of this invention. It is a block diagram for demonstrating the electrical structure of the said substrate processing apparatus. It is a flowchart which shows an example of the process of the wafer by the said substrate processing apparatus. It is a figure which shows the process state in an example of the process of the said wafer illustratively. It is an illustration figure for demonstrating the structure of the substrate processing apparatus for enforcing the substrate processing method which concerns on 2nd Embodiment of this invention. 6 is a flowchart showing an example of wafer processing by the substrate processing apparatus shown in FIG. 5. It is an illustration figure for demonstrating the structure of the substrate processing apparatus for enforcing the substrate processing method which concerns on 3rd Embodiment of this invention. It is a flowchart which shows an example of the process of the wafer by the substrate processing apparatus shown in FIG. It is a flowchart which shows the example of a process of the wafer by the substrate processing method which concerns on 4th Embodiment of this invention. FIG. 10 is a diagram schematically illustrating a processing state in the processing example of FIG. 9.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is an illustrative view for explaining a configuration of a substrate processing apparatus 1 for performing a substrate processing method according to a first embodiment of the present invention. The substrate processing apparatus 1 is a single wafer type for processing a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as a substrate to be processed with a processing liquid (chemical liquid, pure water or other rinsing liquid). A spin chuck 2 that holds and rotates the wafer W substantially horizontally, a processing liquid nozzle 3 that supplies a processing liquid to the surface (upper surface) of the wafer W held by the spin chuck 2, and a spin chuck 2. And a gas nozzle 4 for supplying gas to the surface of the wafer W held on the substrate.

The spin chuck 2 has a rotating shaft 5 extending in a vertical direction and a disk-shaped spin base 6 attached horizontally to the upper end of the rotating shaft 5. The spin chuck 2 can hold the wafer W substantially horizontally by a plurality of chuck pins 7 erected on the periphery of the upper surface of the spin base 6.
That is, the plurality of chuck pins 7 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the wafer W at the peripheral edge of the upper surface of the spin base 6. The wafer W is held in contact with different positions on the peripheral surface of the wafer W while supporting the portion, so that the wafer W can be clamped in cooperation with each other, and the wafer W can be held almost horizontally.

The rotating shaft 5 is coupled to a chuck rotation driving mechanism 8 including a driving source such as a motor. With the wafer W held by a plurality of chuck pins 7, a driving force is input from the chuck rotation driving mechanism 8 to the rotation shaft 5, so that the wafer W is moved around a vertical axis passing through the center O of the surface of the wafer W. It can be rotated.
The spin chuck 2 is not limited to such a configuration. For example, the back surface of the wafer W is vacuum-sucked to hold the wafer W in a substantially horizontal posture, and in that state, around the vertical axis. A vacuum chucking type (vacuum chuck) that can rotate the held wafer W by rotation may be employed.

  The processing liquid nozzle 3 is, for example, a straight nozzle that discharges the processing liquid in a continuous flow state, and is attached to the tip of an arm 9 that extends substantially horizontally with its discharge port directed toward the wafer W (downward). ing. The arm 9 is supported by a support shaft 10 that extends substantially vertically, and extends substantially horizontally from the upper end of the support shaft 10. The support shaft 10 is provided so as to be rotatable around its central axis.

  The support shaft 10 includes a treatment liquid nozzle moving mechanism 11 that moves the treatment liquid nozzle 3 substantially horizontally by rotating the support shaft 10, and a treatment liquid nozzle that raises and lowers the treatment liquid nozzle 3 by raising and lowering the support shaft 10. The raising / lowering drive mechanism 12 is couple | bonded. The processing liquid nozzle 3 is arranged above the wafer W held by the spin chuck 2 by rotating the support shaft 10 and moving the processing liquid nozzle 3 substantially horizontally by the processing liquid nozzle moving mechanism 11. It is possible to retreat from above W. Specifically, the supply position of the processing liquid from the processing liquid nozzle 3 to the surface of the wafer W moves while drawing an arc-shaped locus between the center O of the surface and the peripheral edge of the surface, The processing liquid nozzle 3 can be moved above the wafer W. Further, the processing liquid nozzle 3 is moved up and down by the processing liquid nozzle lifting / lowering drive mechanism 12 so that the processing liquid nozzle 3 is brought close to the surface of the wafer W held by the spin chuck 2 or retreated above the spin chuck 2. Can do.

A DIW supply pipe 13 is connected to the processing liquid nozzle 3, and DIW (deionized pure water) as a rinsing liquid is supplied from the DIW supply pipe 13 to the processing liquid nozzle 3. A DIW valve 14 is interposed in the DIW supply pipe 13, and the DIW supply to the processing liquid nozzle 3 can be controlled by opening and closing the DIW valve 14.
The gas nozzle 4 is attached to the tip of an arm 15 that extends substantially horizontally with its discharge port directed toward the wafer W (downward). The arm 15 is supported by a support shaft 16 that extends substantially vertically, and extends substantially horizontally from the upper end of the support shaft 16. The support shaft 16 is provided so as to be rotatable around its central axis.

  A gas nozzle moving mechanism 17 that couples the gas nozzle 4 substantially horizontally by rotating the support shaft 16 is coupled to the support shaft 16. By rotating the support shaft 16 by the gas nozzle moving mechanism 17 and moving the gas nozzle 4 substantially horizontally, the gas nozzle 4 is disposed above the wafer W held by the spin chuck 2 or retracted from above the wafer W. Can be. Specifically, the supply position of the gas from the gas nozzle 4 to the surface of the wafer W moves so as to move while drawing an arc-shaped locus between the center O of the surface and the peripheral edge of the surface. The gas nozzle 4 can be moved upward.

A nitrogen gas supply pipe 18 is connected to the gas nozzle 4, and nitrogen gas as an inert gas is supplied from the nitrogen gas supply pipe 18 to the gas nozzle 4. A nitrogen gas valve 20 is interposed in the nitrogen gas supply pipe 18, and the supply of nitrogen gas to the gas nozzle 4 can be controlled by opening and closing the nitrogen gas valve 20.
FIG. 2 is a block diagram for explaining an electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control device 22. The control device 22 controls operations of the chuck rotation driving mechanism 8, the processing liquid nozzle moving mechanism 11, the processing liquid nozzle lifting / lowering driving mechanism 12, and the gas nozzle moving mechanism 17. The control device 22 controls the opening and closing of the DIW valve 14 and the nitrogen gas valve 20.

FIG. 3 is a flowchart showing an example of processing of the wafer W by the substrate processing apparatus 1, and FIG. 4 is a diagram schematically showing a processing state in an example of processing of the wafer W. FIGS. 4A to 4D show a plan view (upper side) and a longitudinal sectional view (lower side) of the wafer W in each processing state.
Hereinafter, with reference to FIGS. 1 to 4, a case will be described in which a process using a chemical solution (hydrofluoric acid) is performed on the surface of the wafer W and the surface becomes hydrophobic.

The wafer W to be processed is transferred by a transfer robot (not shown) and transferred from the transfer robot to the spin chuck 2 (step S1).
When the wafer W is delivered to the spin chuck 2, the control device 22 controls the chuck rotation driving mechanism 8 to move the wafer W held on the spin chuck 2 to a predetermined low rotation speed (for example, 50 rpm or less, preferably 10 rpm or less). Further, the control device 22 controls the processing liquid nozzle moving mechanism 11 to place the processing liquid nozzle 3 above the wafer W held by the spin chuck 2.

Thereafter, the control device 22 closes the nitrogen gas valve 20 and opens the DIW valve 14, and as shown in FIG. 4A, the rotation center of the surface of the wafer W from the processing liquid nozzle 3 (in this embodiment, the wafer). The DIW is discharged at the first supply flow rate toward the vicinity of the center O of the surface of W (substantially the same position as the center O) (step S2).
The DIW supplied to the surface of the wafer W is distributed over the entire surface of the wafer W under the centrifugal force due to the rotation of the wafer W. As a result, the surface of the wafer W is cleaned by DIW, and the entire surface of the wafer W is rinsed. Further, a DIW liquid film covering the entire surface of the wafer W is formed on the surface of the wafer W (liquid film forming step), and the film thickness of this liquid film is compared with the case where the surface of the wafer W is hydrophilic. It is thick.

  When the supply of DIW is performed for a predetermined rinsing process time, the control device 22 controls the chuck rotation drive mechanism 8 to stop the rotation of the wafer W, and the supply flow rate of DIW from the processing liquid nozzle 3 is changed. The first supply flow rate is changed to the second supply flow rate (second supply flow rate <first supply flow rate). And the control apparatus 22 controls the process liquid nozzle moving mechanism 11, and arrange | positions the supply position of DIW from the process liquid nozzle 3 to the said surface in the peripheral part of the said surface. Further, the control device 22 controls the processing liquid nozzle raising / lowering drive mechanism 12 to lower the processing liquid nozzle 3 to bring the processing liquid nozzle 3 closer to the surface.

  Next, the control device 22 controls the gas nozzle moving mechanism 17 to dispose the gas nozzle 4 above the wafer W, open the nitrogen gas valve 20 and discharge nitrogen gas from the gas nozzle 4 toward the surface of the wafer W ( Step S3). And the control apparatus 22 controls the gas nozzle moving mechanism 17 in the state which discharged nitrogen gas from the gas nozzle 4, and moves the gas nozzle 4 above the said rotation center (step S4).

  Thereby, nitrogen gas is supplied to the surface of the wafer W, and the supply position is moved toward the rotation center. Specifically, as shown in FIG. 4B, nitrogen gas discharged from the gas nozzle 4 is first supplied to the peripheral edge of the surface, and DIW is removed from the peripheral edge. That is, a liquid film removal region T from which the DIW liquid film has been removed is formed on the periphery (liquid film removal region forming step). Then, as shown in FIG. 4C, the liquid film removal region T has a circular shape from a hollow shape formed on the periphery of the liquid film as the nitrogen gas supply position moves to the surface. It is moved toward the rotation center while changing its shape, and the rotation center is arranged in the liquid film removal region T (liquid film removal region moving step). At this time, since the surface of the wafer W is hydrophobic, the liquid film removal region T can be easily moved compared to the case where the surface is hydrophilic.

  Further, while the gas nozzle 4 is moved above the rotation center, DIW continues to be discharged from the processing liquid nozzle 3 toward the surface at the second supply flow rate, and from the processing liquid nozzle 3 to the surface. The DIW supply position is at the peripheral portion of the surface farthest from the liquid film removal region T, that is, the peripheral portion opposed to the peripheral portion where the liquid film removal region T is first formed across the rotation center. Has been placed. Thus, the DIW supply position is determined so as to avoid the movement path of the liquid film removal region T.

  First, by forming the liquid film removal region T at the periphery of the surface, it is possible to suppress or prevent DIW from being captured by the nitrogen gas supplied to the periphery. Further, even if droplets are generated when nitrogen gas is supplied, the droplets are absorbed by the DIW liquid film as the liquid film removal region T moves. Therefore, it is possible to suppress or prevent the DIW from evaporating in the liquid film removal region T and causing poor drying such as a watermark. In addition, even if a drying failure due to a droplet generated at the first supply of nitrogen gas occurs, the peripheral edge is a non-device formation region, so that a device formation region that is an inner region of the non-device formation region It is possible to suppress or prevent the deterioration of the characteristics of the device formed on the substrate.

  Further, in the liquid film removal region forming step and the liquid film removal region moving step, since DIW is continuously discharged from the processing liquid nozzle 3 toward the surface, the amount of DIW on the surface is kept large. It is possible to maintain a state where the area other than the liquid film removal area T is covered with the liquid film of the processing liquid. Thereby, it can suppress that DIW evaporates in area | regions other than the liquid film removal area | region T, and a dry defect arises in the said area | region.

  Further, in the liquid film removal region forming step and the liquid film removal region moving step, the supply position of DIW from the processing liquid nozzle 3 to the surface is arranged at the peripheral portion of the surface farthest from the liquid film removal region T. Thereby, it is possible to suppress a part of DIW discharged from the processing liquid nozzle 3 from reaching the liquid film removal region T. Thereby, it is possible to prevent DIW from evaporating in the liquid film removal region T and causing poor drying in the liquid film removal region T.

  Furthermore, in the liquid film removal region forming step and the liquid film removal region moving step, the DIW supply flow rate (the second supply flow rate) to the surface is the supply flow rate (the first supply flow rate) in the liquid film formation step. ), And the position of the processing liquid nozzle 3 with respect to the surface is closer to the surface than the position in the liquid film forming step. It can weaken rather than the said momentum in a formation process. Thereby, it is possible to reliably suppress a part of the DIW discharged from the processing liquid nozzle 3 (particularly, the processing liquid splash splashed on the surface of the wafer W) from reaching the liquid film removal region T.

When the liquid film removal region T is moved to the center of the main surface (the rotation center and the vicinity thereof), the control device 22 closes the DIW valve 14 and stops the discharge of DIW from the processing liquid nozzle 3. At the same time, the processing liquid nozzle moving mechanism 11 is controlled to retract the processing liquid nozzle 3 from above the wafer W.
Next, the control device 22 controls the chuck rotation drive mechanism 8 to increase the rotation speed of the wafer W held on the spin chuck 2 in a non-rotation state continuously or stepwise to a predetermined high rotation speed. The gas nozzle 4 is moved upwardly from the periphery by controlling the gas nozzle moving mechanism 17 while discharging the nitrogen gas from the gas nozzle 4 (step S5).

  As a result, a centrifugal force that increases continuously or stepwise by the accelerated rotation of the wafer W acts on the annular liquid film in which the liquid film removal region T is disposed on the inside thereof, and the liquid film is gradually Driven to the periphery, it is swung around the wafer W. Further, the supply position of the nitrogen gas from the gas nozzle 4 to the surface is moved from the center of rotation toward the peripheral edge, so that the liquid film is quickly driven to the peripheral edge.

  As shown in FIG. 4D, the liquid film removal region T is expanded to the peripheral edge as the liquid film is driven to the peripheral edge. That is, DIW is removed from the surface as the liquid film removal region T is expanded, and the liquid film removal region T is spread over the entire surface, so that DIW is completely eliminated from the entire surface. Then, after DIW is completely removed from the entire surface, a small amount of DIW adhering to the surface of the wafer W evaporates to dry the wafer W (substrate drying process).

  At this time, there is no DIW in the liquid film removal region T, and the DIW at the center of the surface is reliably removed. In addition, the entire surface can be uniformly dried. Further, since the surface is dried while being protected by the nitrogen gas discharged from the gas nozzle 4, it is possible to reliably suppress the occurrence of poor drying on the surface.

  When DIW is removed from the entire surface and the surface of the wafer W is dried, the control device 22 closes the nitrogen gas valve 20 to stop the discharge of the nitrogen gas from the gas nozzle 4 and controls the gas nozzle moving mechanism 17. Thus, the gas nozzle 4 is retracted from above the wafer W. Then, the rotation speed of the wafer W is reduced and the rotation of the wafer W is stopped, and the processed wafer W is transferred from the spin chuck 2 by a transfer robot (not shown) (step S6).

  As described above, in the first embodiment, the liquid film removal region T is formed at the periphery of the surface of the wafer W, thereby suppressing or preventing DIW from being captured by the nitrogen gas supplied to the surface. be able to. Furthermore, by moving the liquid film removal region T to the center of the surface of the wafer W, DIW can be favorably excluded from the center. In other words, the wafer W can be uniformly dried by reliably removing DIW from the surface while suppressing or preventing the occurrence of poor drying in the liquid film removal region T. Therefore, even if the surface of the wafer W is hydrophobic, the surface can be uniformly dried while suppressing poor drying.

  FIG. 5 is an illustrative view for explaining a configuration of a substrate processing apparatus 1a for carrying out a substrate processing method according to the second embodiment of the present invention, and FIG. 6 is a process of processing a wafer W by the substrate processing apparatus 1a. It is a flowchart which shows an example. 5 and FIG. 6, parts corresponding to the parts shown in FIG. 1 and FIG. 3 are given the same reference numerals as those parts, and in the following, the parts with the same reference numerals are given. Detailed description is omitted. In the following, reference is made to FIG. 2, FIG. 5, and FIG.

The main difference between the configuration of the substrate processing apparatus 1 a in FIG. 5 and the configuration of the substrate processing apparatus 1 in FIG. 1 is that it has a facing surface 23 that is disposed facing the surface of the wafer W held by the spin chuck 2. The reason is that the blocking plate 24 is provided above the spin chuck 2.
Specifically, the blocking plate 24 is a disk-like member having substantially the same diameter as the wafer W (or a slightly smaller diameter than the wafer W), and the lower surface thereof serves as the facing surface 23. On the upper surface of the blocking plate 24, a rotation shaft 25 is fixed along a vertical center axis common to the rotation shaft 5 of the spin chuck 2.

The rotating shaft 25 is a hollow shaft, and a gas supply path 26 for supplying nitrogen gas to the surface of the wafer W is formed therein. The lower end of the gas supply path 26 opens at the facing surface 23 as a gas discharge port 27 for discharging nitrogen gas to the surface of the wafer W. Nitrogen gas is supplied to the gas supply path 26 via a nitrogen gas valve 28.
The rotary shaft 25 is coupled with a shield plate lifting / lowering drive mechanism 29 and a shield plate rotary drive mechanism 30. By moving the rotating shaft 25 and the blocking plate 24 up and down by the blocking plate lifting / lowering drive mechanism 29, the blocking plate 24 is close to the surface of the wafer W held by the spin chuck 2 (position shown in FIG. 5); It can be moved up and down between the retreat position retreated largely above the spin chuck 2. The blocking plate rotation drive mechanism 30 can rotate the blocking plate 24 almost in synchronization with the rotation of the wafer W by the spin chuck 2 (or at a slightly different rotational speed).

In an example of the processing of the wafer W by the substrate processing apparatus 1a according to the second embodiment, an example of the processing of the wafer W by the substrate processing apparatus 1 up to the liquid film removal region moving step (from step S1 to S4) The same process is performed.
After the liquid film removal region moving step, the control device 22 controls the chuck rotation driving mechanism 8 to move the wafer W held on the spin chuck 2 to a predetermined low rotation speed (for example, 50 rpm or less, preferably 10 rpm or less). Thereafter, the control device 22 closes the nitrogen gas valve 20 to stop the discharge of the nitrogen gas from the gas nozzle 4, controls the gas nozzle moving mechanism 17, and retracts the gas nozzle 4 from above the wafer W (step S10). At this time, since the wafer W is rotated at the predetermined low rotation speed, the annular liquid film is maintained around the liquid film removal region T by receiving the centrifugal force due to the rotation. Therefore, the liquid film removal region T is maintained at the central portion.

  Next, the control device 22 controls the blocking plate raising / lowering drive mechanism 29 to lower the blocking plate 24, thereby placing the facing surface 23 facing the surface of the wafer W and opening the nitrogen gas valve 28. Nitrogen gas is supplied to the gas supply path 26, and nitrogen gas is discharged from the gas discharge port 27 toward the surface of the wafer W (step S11). Thereby, the surrounding atmosphere is prevented from entering the space between the facing surface 23 and the surface of the wafer W, and the space becomes a nitrogen gas atmosphere.

  Then, the control device 22 moves the wafer W held on the spin chuck 2 in a predetermined low rotation state from the predetermined low rotation speed to a predetermined high speed with the facing surface 23 facing the surface of the wafer W. The rotational speed is increased to the rotational speed continuously or stepwise while increasing the rotational speed, and the blocking plate rotation drive mechanism 30 is controlled to synchronize with the rotation of the wafer W (or slightly different rotational speed). The blocking plate 24 is rotated (step 12).

  Thereby, the nitrogen gas discharged from the gas discharge port 27 spreads toward the peripheral edge of the surface as the wafer W and the blocking plate 24 rotate. Further, the liquid film is subjected to a centrifugal force that increases continuously or stepwise by the accelerated rotation of the wafer W and is swung around the wafer W while being gradually driven to the periphery of the wafer W. Is dried while being protected by nitrogen gas (substrate drying step).

  When DIW is removed from the entire surface and the surface of the wafer W is dried, the controller 22 closes the nitrogen gas valve 28 and stops the discharge of nitrogen gas from the gas discharge port 27. Then, the control device 22 controls the shield plate rotation drive mechanism 30 to stop the rotation of the shield plate 24 and controls the shield plate lifting / lowering drive mechanism 29 to largely retract the shield plate 24 above the spin chuck 2. Thereafter, the rotation speed of the wafer W is reduced, the rotation of the wafer W is stopped, and the processed wafer W is transferred from the spin chuck 2 by a transfer robot (not shown) (step S6).

  As described above, in the second embodiment, the opposing surface 23 of the shielding plate 24 is disposed to oppose the surface of the wafer W, and the space between the opposing surface 23 and the surface is maintained in a nitrogen gas atmosphere. The surface can be dried. Thereby, since the said surface can be reliably protected by nitrogen gas, the said surface can be dried uniformly, suppressing the dry defect arising on the said surface reliably.

  FIG. 7 is an illustrative view for explaining the configuration of a substrate processing apparatus 1b for carrying out the substrate processing method according to the third embodiment of the present invention, and FIG. 8 is based on the substrate processing apparatus 1b shown in FIG. 5 is a flowchart illustrating an example of processing of a wafer W. 7 and 8, parts corresponding to the parts shown in FIGS. 1 and 3 are denoted by the same reference numerals as those parts, and hereinafter, the parts having the same reference numerals are denoted. Detailed description is omitted. In the following, reference is made to FIG. 3, FIG. 7, and FIG.

The main difference between the configuration of the substrate processing apparatus 1b in FIG. 7 and the configuration of the substrate processing apparatus 1 in FIG. 1 is that the tip of the gas nozzle 4 is disposed opposite to the surface of the wafer W held by the spin chuck 2. The shield plate 32 having the opposed surface 31 is attached.
Specifically, the blocking plate 32 is a disk-shaped member having a smaller diameter (or substantially the same diameter as the wafer W) than the wafer W, and the lower surface thereof is the facing surface 31. The shielding plate 32 is attached to the gas nozzle 4 so as to be coaxial with the gas nozzle 4 (the central axes of the gas nozzle 4 and the shielding plate 32 are coaxial).

The gas nozzle 4 and the blocking plate 32 are integrally moved substantially horizontally by the gas nozzle moving mechanism 17. By disposing the gas nozzle 4 above the wafer W held by the spin chuck 2, the wafer W The opposing surface 31 can be disposed in close proximity to the surface (see FIG. 7).
In an example of the processing of the wafer W by the substrate processing apparatus 1b according to the third embodiment, an example of the processing of the wafer W by the substrate processing apparatus 1 up to the liquid film removal region forming step (from step S1 to S3) The same process is performed.

  After the liquid film removal region forming step, the control device 22 controls the gas nozzle moving mechanism 17 to move the gas nozzle 4 and the blocking plate 32 integrally in a substantially horizontal manner so that the liquid film removal region T is located at the center of the surface. The counter surface 31 is disposed close to the surface of the wafer W while being moved to step (Step S20, liquid film removal region moving step). Thereby, the surrounding atmosphere is prevented from entering the space between the facing surface 31 and the surface of the wafer W, and the space becomes a nitrogen gas atmosphere.

  Next, the control device 22 controls the chuck rotation driving mechanism 8 with the facing surface 31 facing the surface of the wafer W so that the wafer W held by the spin chuck 2 in a non-rotating state is predetermined. The rotation is accelerated while increasing the rotation speed continuously or stepwise up to a high rotation speed (step S21). As a result, the liquid film is subjected to a centrifugal force that increases continuously or stepwise by the accelerated rotation of the wafer W, and is gradually driven to the periphery of the wafer W while being shaken off around the wafer W. Is dried while being protected by nitrogen gas (substrate drying step). At this time, similarly to the case of the first embodiment, the gas nozzle 4 and the blocking plate 32 may be integrally moved toward the outer side of the rotation radius.

  When DIW is removed from the entire surface and the surface of the wafer W is dried, the control device 22 closes the nitrogen gas valve 20 to stop the discharge of the nitrogen gas from the gas nozzle 4 and the gas nozzle moving mechanism 17 is turned on. The gas nozzle 4 and the shielding plate 32 are retracted from above the wafer W by controlling. Then, the rotation speed of the wafer W is reduced and the rotation of the wafer W is stopped, and the processed wafer W is transferred from the spin chuck 2 by a transfer robot (not shown) (step S6).

  As described above, in the third embodiment, the gas nozzle 4 and the blocking plate 32 are integrated, and the gas nozzle moving mechanism 17 integrally moves almost horizontally, thereby moving the liquid film removal region T and facing the surface. The opposing arrangement of the surface 31 can be performed simultaneously. Thereby, after moving the liquid film removal region T to the central portion, the substrate drying process can be executed immediately, so that the surface of the surface is reduced by nitrogen gas while suppressing an increase in the processing time of the wafer W. The surface can be dried while reliably protecting.

  FIG. 9 is a flowchart showing a processing example of the wafer W by the substrate processing method according to the fourth embodiment of the present invention. FIG. 10 is a diagram schematically showing a processing state in the processing example of FIG. In FIG. 9 and FIG. 10, parts corresponding to the respective parts in the first embodiment described above are denoted by the same reference numerals as those of the respective parts. Further, in the following, detailed description of each part given the same reference numeral is omitted.

The fourth embodiment is different from the first embodiment in that DIW is not supplied from the processing liquid nozzle 3 to the surface of the wafer W during the liquid film removal region forming step and the liquid film removal region moving step. is there.
In the processing example of the wafer W according to the fourth embodiment, the same processing as the processing example of the wafer W according to the first embodiment is performed until the liquid film forming step (steps S1 and S2) is completed.

  When a predetermined rinsing process time has elapsed from the start of DIW supply, the control device 22 closes the DIW valve 14 to stop the discharge of DIW from the process liquid nozzle 3 (step S30), and the process liquid nozzle moving mechanism 11, the processing liquid nozzle 3 is retracted from above the wafer W to a retracted position on the side of the wafer W. The control device 22 controls the chuck rotation driving mechanism 8 to control the wafer W at a predetermined low rotation speed (rotation speed at which a liquid film of DIW can be held on the wafer W. For example, 50 rpm or less. Preferably, 10 rpm or less. ) Will continue to rotate. The control device 22 controls the gas nozzle moving mechanism 17 to place the gas nozzle 4 above the wafer W and open the nitrogen gas valve 20 to discharge nitrogen gas from the gas nozzle 4 toward the surface of the wafer W. (Step S3). Specifically, nitrogen gas discharged from the gas nozzle 4 is first supplied to the peripheral edge of the surface of the wafer W, and DIW is removed from the peripheral edge of the surface of the wafer W. As a result, a liquid film removal region T from which the DIW liquid film has been removed is formed at the peripheral edge of the surface of the wafer W (see liquid film removal region forming step, FIG.

  Then, the control device 22 controls the gas nozzle moving mechanism 17 to move the gas nozzle 4 above the rotation center of the surface of the wafer W while opening the nitrogen gas valve 20 and discharging the nitrogen gas from the gas nozzle 4. (Step S4). Thus, nitrogen gas is supplied to the surface of the wafer W, and the supply position is moved toward the center of rotation of the surface of the wafer W. The liquid film removal region T changes from a hollow shape formed at the periphery of the liquid film to a circular shape as the nitrogen gas supply position moves to the surface of the wafer W, and the rotation center of the surface of the wafer W It is moved toward. As a result, the rotation center of the wafer W is arranged in the liquid film removal region T (see the liquid film removal region moving step, see FIG. 10C). Thereafter, a substrate drying process is performed (see step S5, FIG. 10D). After the substrate drying process is finished, the processed wafer W is unloaded by a transfer robot (not shown) (step S6).

  In this embodiment, DIW is not supplied from the processing liquid nozzle 3 to the surface of the wafer W in the liquid film removal region forming step and the liquid film removal region moving step. Therefore, the processing liquid can be prevented from entering the liquid film removal region T, and the formation of DIW droplets in the liquid film removal region T can be suppressed or prevented. Thereby, it is possible to suppress the occurrence of poor drying in the liquid film removal region T.

  Further, in the liquid film removal region forming step and the liquid film removal region moving step, since the wafer W is rotated at a low rotational speed, centrifugal force hardly acts on the liquid film on the surface of the wafer W at this time. The DIW on the surface of the wafer W hardly scatters to the side of the wafer W. Therefore, the dissipation of DIW from the surface of the wafer W can be suppressed, and the disappearance of the liquid film from the area other than the liquid film removal area T can be suppressed. Thereby, it is possible to suppress or prevent DIW supplied from the processing liquid nozzle 3 from reaching the liquid film removal region T and forming droplets of DIW in the liquid film removal region T. Therefore, it is possible to suppress the occurrence of poor drying in the liquid film removal region T.

In the above description, the case where the wafer W is rotated at a low rotation speed in the liquid film removal region forming step and the liquid film removal region moving step has been described as an example. However, the liquid film removal region forming step and the liquid film removal are described. In the region moving process, the wafer W may be stopped from rotating. In such a case, the dissipation of DIW from the wafer can be further suppressed.
The present invention is not limited to the contents of the above embodiments, and various modifications can be made within the scope of the claims. For example, in the first to fourth embodiments described above, an example in which the liquid film of DIW is shaken around the wafer W by mainly rotating the wafer W to the predetermined high rotation speed in the substrate drying step will be described. However, by increasing the supply flow rate of nitrogen gas to the surface of the wafer W without rotating the wafer W or at a constant rotation speed, the liquid film is moved to the peripheral edge to move from the surface. May be eliminated.

In the second embodiment and the third embodiment, DIW may not be supplied from the processing liquid nozzle 3 to the surface of the wafer W during the liquid film removal region forming step and the liquid film removal region moving step.
Further, in the first to fourth embodiments described above, an example in which nitrogen gas is supplied to the surface of the wafer W has been described. However, an organic solvent having higher volatility than pure water is used for the nitrogen gas supplied to the surface. The vapor | steam of IPA (isopropyl alcohol) which is may be contained (refer FIG.1, FIG.5, FIG.7).

By supplying nitrogen gas containing IPA vapor to the surface of the wafer W, in the substrate drying step, DIW adhering to the surface can be replaced with IPA to quickly dry the wafer W.
Further, when supplying nitrogen gas containing IPA vapor to the surface of the wafer W, in the substrate drying step, the wafer W is increased by increasing the supply flow rate of the nitrogen gas containing IPA vapor without rotating the wafer W. The wafer W may be dried by removing the liquid film of DIW from the surface of W.

Examples of the organic solvent having higher volatility than the pure water include methanol, ethanol, acetone, and HFE (hydrofluoroether) in addition to IPA.
In the first to fourth embodiments, the example in which the gas nozzle 4 is moved above the rotation center while stopping the rotation of the spin chuck 2 in the liquid film removal region moving step has been described. The gas nozzle 4 may be moved while rotating the chuck 2 and the wafer W at a low rotation speed.

Further, in the first to fourth embodiments described above, the example in which the liquid film removal region T is formed on the peripheral edge of the surface of the wafer W in the liquid film removal region forming step has been described. The liquid film removal region T may be formed in a region not including the center O.
In the first to fourth embodiments described above, DIW is exemplified as the rinse liquid. However, the rinse liquid is not limited to DIW, and other rinse liquids such as pure water, ozone water, hydrogen water, and carbonated water may be used.

Furthermore, in the above-described first to fourth embodiments, nitrogen gas is exemplified as the inert gas. However, the inert gas is not limited to nitrogen gas, and other inert gas such as argon gas may be used.
Furthermore, in the first to fourth embodiments described above, the semiconductor wafer W is taken up as a substrate to be processed. However, the substrate is not limited to the semiconductor wafer W, but a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for an FED, an optical disk. Other types of substrates such as substrates for magnetic disks, substrates for magnetic disks, substrates for magneto-optical disks, and substrates for photomasks may be processed.
1, 1a, 1b Substrate processing apparatus 2 Spin chuck (substrate holding means)
3 Processing liquid nozzle 4 Gas nozzle 8 Chuck rotation drive mechanism (substrate rotation means)
11 Processing liquid nozzle moving mechanism (processing liquid nozzle moving means)
12 Process liquid nozzle raising / lowering drive mechanism (process liquid nozzle moving means)
17 Gas nozzle moving mechanism (gas nozzle moving means)
22 Control device (control means)
23, 31 Opposing surfaces 24, 32 Blocking plate (opposing member)
27 Gas discharge port 29 Shutter plate lift drive mechanism (opposing member moving means)
O center T liquid film removal region W wafer (substrate)

Claims (12)

A liquid film forming step of forming a liquid film of the processing liquid over the entire main surface by supplying the processing liquid from the processing liquid nozzle to the main surface of the substrate held by the substrate holding means;
Liquid film removal that forms a liquid film removal region in which the liquid film is removed in a region including a peripheral edge of the main surface by supplying an inert gas from a gas nozzle to the main surface on which the liquid film is formed. A region forming step;
After the liquid film removal region forming step, the liquid film removal region includes the periphery of the main surface by supplying the inert gas from the gas nozzle to the main surface and moving the gas nozzle by the gas nozzle moving means. A liquid film removal region moving step of moving from the region and placing the center of the main surface in the liquid film removal region;
Substrate drying method including, after the liquid film removal region moving step, expanding the liquid film removal region to remove the processing liquid from the main surface and drying the substrate.   The substrate processing method according to claim 1, wherein in the liquid film removal region forming step and the liquid film removal region moving step, a processing liquid is supplied from the processing liquid nozzle to the main surface.   3. The processing liquid nozzle is arranged at a peripheral portion of the main surface farthest from the liquid film removal region by the processing liquid nozzle moving means in the liquid film removal region forming step and the liquid film removal region moving step. The substrate processing method as described in 2. above.   In the liquid film removal region forming step and the liquid film removal region moving step, the processing liquid nozzle is moved by the processing liquid nozzle moving means, and the supply position of the processing liquid from the processing liquid nozzle to the main surface is The substrate processing method according to claim 3, wherein the substrate processing method is disposed at a peripheral portion of the main surface farthest from the liquid film removal region.   By the processing liquid nozzle moving means, the position of the processing liquid nozzle with respect to the main surface in the liquid film removal region forming step and the liquid film removal region moving step is more than the position of the processing liquid nozzle in the liquid film forming step. The substrate processing method according to any one of claims 1 to 4, wherein the substrate processing method is brought close to a main surface.   The supply flow rate of the processing liquid from the processing liquid nozzle to the main surface in the liquid film removal region forming step and the liquid film removal region moving step is less than the supply flow rate in the liquid film formation step. The substrate processing method according to claim 5.   The substrate processing method according to claim 1, wherein a processing liquid is not supplied from the processing liquid nozzle to the main surface during the liquid film removal area forming step and the liquid film removal area moving step.   After the liquid film removal region moving step, the gas nozzle moving means retracts the gas nozzle from the substrate, and then the counter member moving means moves the counter member to make the counter surface of the counter member the main surface. The substrate drying step is performed in a state in which the substrate is disposed opposite to each other, an inert gas is discharged from a gas discharge port formed in the opposite surface, and the opposite surface is disposed opposite to the main surface. The substrate processing method according to claim 7.   By moving the gas nozzle and the opposing member integrated with the gas nozzle together by the gas nozzle moving means, in the liquid film removal region moving step, the counter member is disposed while the center is disposed in the liquid film removal region. The substrate processing according to claim 1, wherein the substrate drying step is performed in a state where the opposite surface is disposed opposite to the main surface, and the opposite surface is disposed opposite to the main surface. Method.   The substrate processing method according to claim 1, wherein the substrate drying step is performed while supplying an inert gas from the gas nozzle to the main surface.   The substrate processing method according to claim 10, wherein in the substrate drying step, the inert gas supplied to the main surface contains an organic solvent vapor having higher volatility than pure water.   In the substrate drying step, the gas nozzle moving unit is configured to rotate the substrate held by the substrate holding unit by a substrate rotating unit at a predetermined rotation speed and discharge an inert gas from the gas nozzle toward the main surface. The inert gas supply position from the gas nozzle to the main surface is moved from the center toward the peripheral edge of the main surface by moving the gas nozzle according to claim 1 to dry the substrate. The substrate processing method as described in any one of Claims.

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