JP6817821B2 - Substrate processing equipment and substrate processing method - Google Patents

Description

The present invention relates to a substrate processing apparatus and a substrate processing method. The substrates to be processed include, for example, semiconductor wafers, liquid crystal display substrate, plasma display substrate, FED (Field Emission Display) substrate, optical disk substrate, magnetic disk substrate, optical magnetic disk substrate, photomask. Substrates, ceramic substrates, solar cell substrates, etc. are included.

In the manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a processing liquid is used to process a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device. Patent Document 1 discloses a single-wafer type substrate processing apparatus that processes substrates one by one. In this document, it is proposed that the entire upper surface of the substrate is treated by keeping the space between the upper surface of the substrate and the lower surface of the blocking plate in a liquid-tight state of the treatment liquid. Specifically, the blocking plate is arranged close to the upper surface of the substrate, and the central discharge port provided at the center of the lower surface of the blocking plate (on the lower surface of the blocking plate facing the center of the upper surface of the substrate). The treatment liquid is supplied to the narrow space between the upper surface of the substrate and the lower surface of the blocking plate by discharging the treatment liquid from. The processing liquid discharged into this narrow space from the central discharge port fills the narrow space.

JP-A-2010-123884

However, in the method of Patent Document 1, since the processing liquid is supplied to the narrow space only from the central discharge port, the processing liquid may run out at the outer peripheral portion of the substrate. Therefore, the space between the outer peripheral portion of the upper surface of the substrate and the facing surface may not be sufficiently filled with the treatment liquid.
If the space between the outer peripheral portion of the upper surface of the substrate and the facing surface is not sufficiently filled with the treatment liquid, at least a part of the outer peripheral portion of the upper surface of the substrate may be exposed to the atmosphere between the outer peripheral portion of the upper surface and the facing surface. .. In this case, the processing rate on the outer peripheral portion of the upper surface of the substrate may decrease, and processing residue may occur on the outer peripheral portion of the upper surface of the substrate. As a result, the upper surface of the substrate cannot be uniformly processed.

That is, in order to apply a uniform treatment liquid treatment to the upper surface of the substrate, not only the space between the central portion of the upper surface of the substrate and the facing surface but also the space between the outer peripheral portion of the upper surface of the substrate and the facing surface can be satisfactorily filled with the processing liquid. It has been demanded.
Therefore, an object of the present invention is that not only the space between the central portion of the upper surface of the substrate and the facing surface but also the space between the outer peripheral portion of the upper surface of the substrate and the facing surface can be satisfactorily filled with the treatment liquid. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of uniformly applying a treatment liquid treatment to the upper surface.

One embodiment of this invention, while holding the substrate horizontally, facing the substrate, a substrate holding unit which rotates the vertical first axis of rotation around which passes through the central portion, the upper surface of the substrate opposite A facing member having a surface, a central discharge port that opens facing the central portion of the upper surface of the substrate on the facing surface, and an outer peripheral discharge port that opens facing the outer peripheral portion of the upper surface of the substrate on the facing surface. The treatment liquid is discharged from the central discharge port to supply the treatment liquid between the substrate and the facing surface, and the treatment liquid is discharged from the outer peripheral discharge port to the substrate and the facing surface. Provided is a substrate processing apparatus including a processing liquid discharge unit for replenishing the processing liquid between the two.

According to this configuration, the processing liquid discharged from the outer peripheral portion discharge port replenishes the processing liquid between the outer peripheral portion of the upper surface of the substrate and the facing surface, so that the processing liquid is sufficiently distributed on the outer peripheral portion of the upper surface of the substrate. Can be made. As a result, not only the space between the central portion of the upper surface of the substrate and the facing surface but also the space between the outer peripheral portion of the upper surface of the substrate and the facing surface can be satisfactorily filled with the processing liquid. Therefore, the processing liquid is uniform on the upper surface of the substrate. Can be processed.

In one embodiment of this invention, the treatment liquid ejection unit, the provided on the counter member, including a liquid reservoir which may have been accumulated the process liquid discharged from the outer peripheral portion discharge port.
According to this configuration, the processing liquid stored in the liquid storage portion provided on the facing member is discharged from the outer peripheral portion discharge port. Since both the liquid reservoir and the outer peripheral discharge port are provided on the outer peripheral portion, the processing liquid can be satisfactorily supplied to the outer peripheral discharge port.

In one embodiment of this invention, the treatment liquid ejection unit further including a communication hole for communicating the inside and the outer peripheral portion discharge port of the liquid reservoir. Then , a fluid flows between the outer peripheral portion of the upper surface of the substrate and the periphery of the discharge port of the outer peripheral portion on the facing surface, and is stored in the liquid reservoir due to the decompression of the communication hole accompanying the flow of the fluid. operation being liquid Ru discharged from the outer peripheral portion discharge port through the communication hole.

According to this configuration, the pressure of the outer peripheral discharge port and the communication hole is reduced as the fluid flows between the outer peripheral portion of the upper surface of the substrate and the facing surface. When the pressure is reduced on the outer peripheral discharge port and the communication hole while the treatment liquid is stored in the liquid reservoir, the treatment liquid stored in the liquid reservoir is guided to the communication hole by the venture effect and is guided to the outer circumference. It is discharged from the partial discharge port. Therefore, the processing liquid is discharged from the outer peripheral portion discharge port as the fluid flows between the outer peripheral portion of the upper surface of the substrate and the facing surface in the state where the processing liquid is stored in the liquid reservoir portion. As a result, normally, when the treatment liquid is stored in the liquid reservoir and the fluid flows between the outer peripheral portion of the upper surface of the substrate and the facing surface, the treatment liquid can be discharged from the outer peripheral portion discharge port. A possible configuration can be realized.

In one embodiment of this invention, the fluid flowing between the periphery of the outer peripheral portion discharge port in the opposing surface and the upper surface outer peripheral portion of the substrate Ru treatment liquid der.
According to this configuration, the pressure is reduced on the outer peripheral portion discharge port and the communication hole as the processing liquid flows between the upper outer peripheral portion and the facing surface of the substrate. When the pressure is reduced on the outer peripheral discharge port and the communication hole while the treatment liquid is stored in the liquid reservoir, the treatment liquid stored in the liquid reservoir is guided to the communication hole by the venture effect and is guided to the outer circumference. It is discharged from the partial discharge port. Therefore, with the processing liquid stored in the liquid reservoir, the processing liquid discharged from the central discharge port is circulated between the outer peripheral portion of the upper surface of the substrate and the facing surface, and is processed from the outer peripheral discharge port. It is also possible to discharge the liquid. As a result, the treatment liquid can be discharged from the outer peripheral discharge port without sending the treatment liquid to the outer peripheral discharge port, and therefore, the configuration for delivering the treatment liquid to the outer peripheral discharge port is omitted. It is also possible.

In one embodiment of this invention, the fluid flowing between the periphery of the outer peripheral portion discharge port in the opposing surface and the upper surface outer peripheral portion of the substrate Ru gas der.
According to this configuration, the pressure of the outer peripheral discharge port and the communication hole is reduced as the gas flows between the outer peripheral portion of the upper surface and the facing surface of the substrate. When the pressure is reduced on the outer peripheral discharge port and the communication hole while the treatment liquid is stored in the liquid reservoir, the treatment liquid stored in the liquid reservoir is guided to the communication hole by the venture effect and is guided to the outer circumference. It is discharged from the partial discharge port. Therefore, the processing liquid is discharged from the outer peripheral portion discharge port as the gas flows between the outer peripheral portion of the upper surface of the substrate and the facing surface in the state where the processing liquid is stored in the liquid reservoir portion. As a result, normally, when the treatment liquid is stored in the liquid reservoir and the gas flows between the outer peripheral portion of the upper surface of the substrate and the facing surface, the treatment liquid can be discharged from the outer peripheral portion discharge port. A possible configuration can be realized.

In one embodiment of this invention, in order to increase the flow velocity of the fluid flowing between the periphery of the outer peripheral portion discharge port in the opposing surface and the upper surface outer peripheral portion of the substrate, the periphery in the facing surface projections around parts discharge opening that has is provided.
According to this configuration, by providing the protruding portion on the facing surface, the flow velocity of the fluid flowing between the outer peripheral portion on the upper surface of the substrate and the periphery of the outer peripheral portion discharge port on the facing surface can be increased. As a result, the amount of the processing liquid guided from the liquid reservoir to the outer peripheral discharge port via the communication hole can be increased. As a result, a sufficient flow rate of the processing liquid can be discharged from the outer peripheral discharge port.

In one embodiment of this invention, in order to increase the flow velocity of the fluid flowing between the periphery of the outer peripheral portion discharge port in the opposing surface and the upper surface outer peripheral portion of the substrate, the outer peripheral portion of the facing surface on the outer peripheral side region of the discharge port before Symbol opposite member than the adjacent outer peripheral portion discharge port, wherein the substrate than the inner peripheral side region of the opposite member than the outer circumferential portion discharge port of the opposing surface thick section approaching the upper surface that is provided.
According to this configuration, by providing a thick portion on the facing surface on the outer peripheral side of the facing member from the outer peripheral discharge port, the space between the upper peripheral portion of the substrate and the periphery of the outer peripheral portion discharging port on the facing surface is provided. The flow velocity of the flowing fluid can be increased. As a result, the amount of processing liquid guided from the liquid reservoir to the outer peripheral discharge port through the communication hole increases. As a result, a sufficient flow rate of the processing liquid can be discharged from the outer peripheral discharge port.

In one embodiment of this invention, the outer peripheral portion discharge port, the outer periphery in a state in which the processing liquid is not flowing in between the periphery of the outer peripheral portion discharge port in the opposing surface and the upper surface outer peripheral portion of the substrate part processing liquid from the discharge port is set to the size that does not discharge.
According to this configuration, in the outer peripheral portion discharge port, the processing liquid is not supplied to the outer peripheral portion discharge port in a state where no fluid is flowing between the outer peripheral portion on the upper surface of the substrate and the periphery of the outer peripheral portion discharge port on the facing surface. It is provided small enough for. A force acting toward the outer peripheral discharge port acts on the treatment liquid stored in the liquid reservoir due to the weight of the treatment liquid, but the outer peripheral portion on the upper surface of the substrate and the periphery of the outer peripheral portion discharge port on the facing surface When no fluid is flowing between them, the processing liquid is not discharged from the outer peripheral discharge port. Then, the processing liquid is started to be discharged from the outer peripheral discharge port for the first time due to the Bencheri effect when the fluid flows between the outer peripheral portion of the upper surface of the substrate and the periphery of the outer peripheral discharge port on the facing surface. When no fluid is flowing between the outer peripheral portion of the upper surface of the substrate and the periphery of the outer peripheral discharge port on the facing surface, the processing liquid is not discharged from the outer peripheral discharge port, so that the liquid is stored prior to the discharge timing of the outer peripheral discharge port. It is also possible to store the treatment liquid in the section.

In one embodiment of this invention, the liquid reservoir, the liquid is formed on a surface thereof opposite to the facing surface of the facing member reservoir groove including.
According to this configuration, since the liquid storage portion includes the liquid storage groove formed on the opposite surface, the liquid storage portion can be easily provided. Further, by arranging the processing liquid supply unit facing the liquid storage groove, it is possible to easily realize the supply of the treatment liquid to the liquid storage portion.
The substrate processing apparatus may further include an opposing member rotating unit that rotates the opposing member around a second rotation axis coaxial with the first rotation axis.
The liquid reservoir groove may be formed in an annular shape centered on the second rotation axis.
The treatment liquid discharge unit is a replenishment nozzle that does not rotate with the rotation of the facing member, and the treatment liquid is directed toward the liquid storage groove of the facing member rotating around the second rotation axis. It may further include a replenishment nozzle that discharges and supplies the processing liquid to the liquid reservoir.

In one embodiment of this invention, before Symbol liquid reservoir, further including a bank portion for restricting the processing liquid which is accumulated in the liquid reservoir groove flows out from the reservoir groove.
According to this configuration, even when the opposing member is rotated around the rotation axis, the outflow of the processing liquid from the liquid reservoir groove can be effectively suppressed. As a result, the treatment liquid can be well stored inside the liquid storage portion.

In one embodiment of this invention, the liquid reservoir, said the upper end of the bank portion, the facing member further including an overhanging portion that protrudes radially inward of.
According to this configuration, the eaves can more effectively suppress the outflow of the treatment liquid from the liquid reservoir groove. As a result, the treatment liquid can be more satisfactorily stored inside the liquid storage portion.

In one embodiment of this invention, the liquid reservoir further including a that formed inside the liquid reservoir space of the opposing member.
According to this configuration, even when the opposing member is rotated around the rotation axis, the outflow of the processing liquid from the liquid reservoir groove can be effectively prevented. As a result, the treatment liquid can be well stored in the liquid storage portion.

In one embodiment of this invention, the substrate processing apparatus further including a processing liquid supply unit for supplying a processing liquid to the liquid reservoir. Then, when the start of the discharge of processing liquid from the central portion discharge port, the processing liquid supply unit, you supplying the processing liquid to the liquid reservoir.
According to this configuration, the processing liquid is supplied to the liquid reservoir at the start of discharging the processing liquid from the central discharge port. After the treatment liquid is discharged from the central discharge port, the treatment liquid is discharged from the outer peripheral discharge port. Therefore, at the start of discharging the treatment liquid from the outer peripheral discharge port, the treatment liquid is stored in the liquid reservoir. Since the treatment liquid can be discharged from the outer peripheral portion discharge port in a state where the treatment liquid is stored in the liquid reservoir portion, the treatment liquid can be satisfactorily discharged from the outer peripheral portion discharge port.

In one embodiment of this invention, the outer peripheral portion discharge port, that are provided with a plurality along a circumferential direction of the opposing member.
According to this configuration, since a plurality of outer peripheral discharge ports are provided along the circumferential direction of the facing member, a sufficient amount of processing liquid can be replenished between the outer peripheral portion of the upper surface of the substrate and the facing surface. As a result, the space between the outer peripheral portion of the upper surface of the substrate and the facing surface can be more satisfactorily filled with the treatment liquid.

Before Symbol treatment solution may also contain a chemical solution.
In one embodiment of this invention, the substrate processing apparatus, Ru apparatus der to remove the resist from the top surface of the substrate. Then, the chemical solution, Ru ozone water der to remove the resist from the substrate.
According to this configuration, not only the ozone water discharged from the central discharge port but also the ozone water discharged from the outer peripheral discharge port fills the space between the substrate and the facing surface. Since the ozone water discharged from the outer peripheral portion discharge port replenishes the ozone water between the outer peripheral portion of the upper surface of the substrate and the facing surface, the treatment liquid can be sufficiently distributed in the outer peripheral portion of the upper surface of the substrate. As a result, not only the space between the central portion of the upper surface of the substrate and the facing surface but also the space between the outer peripheral portion of the upper surface of the substrate and the facing surface can be satisfactorily filled with ozone water. Therefore, not only the resist at the center of the upper surface of the substrate but also the resist at the outer periphery of the upper surface of the substrate can be satisfactorily removed, and therefore the resist can be satisfactorily removed from the entire upper surface of the substrate.
The substrate processing device discharges the processing liquid from the central portion discharge port and the outer peripheral portion discharge port and supplies the treatment liquid between the substrate and the facing surface, whereby the substrate and the facing surface are brought into contact with each other. In the meantime, the liquid-tight state of the ozone water may be maintained.

In one embodiment of the present invention , a central discharge port that opens facing the center of the upper surface of the substrate on the facing surface of the facing member facing the upper surface of the substrate and an outer peripheral portion of the upper surface of the substrate facing the facing surface. to a substrate processing method for processing a top surface of the substrate with a processing solution from the processing solution discharge unit including an outer peripheral portion a discharge port opened, the substrate, the first axis of rotation of the vertical passing through the center portion In parallel with the substrate rotation step of rotating the substrate and the substrate rotation step, the treatment liquid is discharged from the central discharge port to fill the space between the substrate and the facing surface with the treatment liquid. Treatment liquid discharge step of discharging and supplying the treatment liquid between the substrate and the facing surface and discharging the treatment liquid from the outer peripheral discharge port to replenish the treatment liquid between the substrate and the facing surface. including the door, that provides a substrate processing method.

According to this method, not only the processing liquid discharged from the central discharge port but also the processing liquid discharged from the outer peripheral discharge port fills the space between the substrate and the facing surface. Since the processing liquid is replenished between the outer peripheral portion of the upper surface of the substrate and the facing surface by the processing liquid discharged from the outer peripheral portion discharge port, the processing liquid can be sufficiently distributed on the outer peripheral portion of the upper surface of the substrate. As a result, not only the space between the central portion of the upper surface of the substrate and the facing surface but also the space between the outer peripheral portion of the upper surface of the substrate and the facing surface can be satisfactorily filled with the processing liquid. Therefore, the processing liquid is uniform on the upper surface of the substrate. Can be processed.

In one embodiment of this invention, the treatment liquid ejection unit including a liquid reservoir which may have been accumulated the process liquid discharged from the outer peripheral portion discharge port. Then, the substrate processing method, at the beginning of the treatment liquid discharging step, further including the treatment liquid supply step of supplying a processing liquid to the liquid reservoir.
According to this method, the processing liquid is supplied to the liquid reservoir at the start of discharging the processing liquid from the central discharge port. After the treatment liquid is discharged from the central discharge port, the treatment liquid is discharged from the outer peripheral discharge port. Therefore, at the start of discharging the treatment liquid from the outer peripheral discharge port, the treatment liquid is stored in the liquid reservoir. Since the treatment liquid can be discharged from the outer peripheral portion discharge port in a state where the treatment liquid is stored in the liquid reservoir portion, the treatment liquid can be satisfactorily discharged from the outer peripheral portion discharge port.
The substrate processing method may further include an opposing member rotation step of rotating the opposing member around a second rotation axis coaxial with the first rotation axis in parallel with the substrate rotation step.
The liquid storage portion may include a liquid storage groove formed on a surface of the facing member opposite to the facing surface.
The liquid reservoir groove may be formed in an annular shape centered on the second rotation axis.
In the treatment liquid discharge step, the treatment liquid is discharged from a replenishment nozzle that does not rotate with the rotation of the facing member toward the liquid storage groove of the facing member that is rotating around the second rotation axis. The step of supplying the treatment liquid to the liquid reservoir groove may be included.

In one embodiment of this invention, the treatment liquid ejection unit including a liquid reservoir which may have been accumulated the process liquid discharged from the outer peripheral portion discharge port. The liquid reservoir is arranged above the outer peripheral discharge port, and the inside of the liquid reservoir and the outer peripheral discharge port are communicated with each other through a communication hole . Then , the communication hole is decompressed with the flow of the fluid between the outer peripheral portion of the upper surface of the substrate and the periphery of the discharge port of the outer peripheral portion on the facing surface, so that the communication hole is stored in the liquid reservoir. The processing fluid is discharged from the outer peripheral discharge port through the communication hole . The substrate processing method further includes a spin-drying step in which the substrate is rotated at high speed around a vertical rotation axis passing through the central portion of the substrate in a state where the treatment liquid is not stored in the liquid reservoir, and shaken off to dry. Mmm.

According to this method, in a state where the processing liquid is not stored in the liquid storage portion, that is, in a state where gas is present inside the liquid storage portion, the outer peripheral portion discharge port on the upper peripheral portion and the facing surface of the substrate As the gas flows between the surroundings, the outer peripheral discharge port and the communication hole are depressurized. As a result, the gas existing inside the liquid reservoir is guided to the communication hole by the Bencheri effect and discharged from the outer peripheral discharge port. As a result, the gas is discharged from the outer peripheral portion discharge port toward the upper peripheral portion of the substrate. Since the gas is blown from the outer peripheral portion discharge port to the outer peripheral portion of the upper surface of the substrate, the outer peripheral portion of the upper surface of the substrate can be satisfactorily dried. As a result, the drying performance of the substrate can be improved.

FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus. FIG. 3 is a cross-sectional view showing a state in which the processing liquid is discharged from the outer peripheral discharge port shown in FIG. FIG. 4 is a plan view of a main part of the facing member included in the processing unit. FIG. 5 is a bottom view of a main part of the facing member. FIG. 6 is a cross-sectional view showing a state in which gas is discharged from the outer peripheral portion discharge port. FIG. 7 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus. FIG. 8 is a flow chart for explaining an example of substrate processing by the processing unit. FIG. 9 is a cross-sectional view showing a first modification of the liquid reservoir groove. FIG. 10 is a cross-sectional view showing a second modification of the liquid reservoir groove. FIG. 11 is a cross-sectional view showing a third modification of the liquid reservoir groove. FIG. 12 is a cross-sectional view for explaining a configuration example of the processing liquid discharge unit according to the second embodiment of the present invention. FIG. 13 is an enlarged cross-sectional view for explaining a configuration example of a processing unit of the substrate processing apparatus according to the third embodiment of the present invention. FIG. 14 is a flow chart for explaining an example of substrate processing by the processing unit. FIG. 15 is a cross-sectional view showing a fourth modification of the liquid reservoir groove. FIG. 16 is a cross-sectional view showing a fifth modification of the liquid reservoir groove. FIG. 17 is a cross-sectional view for explaining a configuration example of the processing liquid discharge unit according to the fourth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing device 1 is a single-wafer processing device that processes a disk-shaped substrate W such as a semiconductor wafer one by one with a processing liquid or a processing gas. The substrate processing apparatus 1 includes a plurality of processing units 2 for processing the substrate W using a processing liquid, a load port LP on which a carrier C accommodating a plurality of substrates W processed by the processing unit 2 is placed, and a load port LP. It includes transfer robots IR and CR that transfer the substrate W between the load port LP and the processing unit 2, and a control device 3 that controls the substrate processing device 1. The transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, a similar configuration.

FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2. FIG. 3 is a cross-sectional view showing a state in which a chemical liquid (treatment liquid) is discharged from the outer peripheral treatment liquid discharge port 10. FIG. 4 is a plan view of a main part of the facing member 8. FIG. 5 is a bottom view of a main part of the facing member 8. FIG. 6 is a cross-sectional view showing a state in which gas is discharged from the outer peripheral treatment liquid discharge port 10.
The processing unit 2 holds a box-shaped chamber 4 having an internal space and one substrate W in the chamber 4 in a horizontal posture, and holds a vertical rotation axis (first rotation axis) passing through the center of the substrate W. ) A spin chuck (board holding unit) 5 for rotating the substrate W around A1, an opposing member 8 having an opposing surface 7 facing the upper surface of the substrate W held by the spin chuck 5, and an opening in the facing surface 7, respectively. The central treatment liquid discharge port 9 and the outer peripheral treatment liquid discharge port 10 are included on the upper surface of the substrate W held by the spin chuck 5 and include the central treatment liquid discharge port 9 and the outer peripheral treatment liquid discharge port (outer peripheral portion discharge port) 10. The first processing liquid discharge unit 11 for discharging the chemical liquid (treatment liquid) from the spin chuck 5, the rinse liquid supply unit 12 for supplying the rinse liquid to the upper surface of the substrate W held by the spin chuck 5, and the spin chuck 5 are provided. Includes a tubular processing cup 13 that surrounds it.

The chamber 4 includes a box-shaped partition wall 14, an FFU (fan filter unit) 15 as a blower unit that sends clean air from the upper part of the partition wall 14 into the partition wall 14 (corresponding to the inside of the chamber 4), and a lower portion of the partition wall 14. Includes an exhaust device (not shown) that exhausts the gas in the chamber 4 from.
The FFU 15 is arranged above the partition wall 14 and is attached to the ceiling of the partition wall 14. The FFU 15 sends clean air from the ceiling of the partition wall 14 into the chamber 4. The exhaust device (not shown) is connected to the bottom of the processing cup 13 via an exhaust duct 16 connected to the inside of the processing cup 13, and sucks the inside of the processing cup 13 from the bottom of the processing cup 13. A downflow is formed in the chamber 4 by the FFU 15 and an exhaust device (not shown).

As the spin chuck 5, a holding type chuck that sandwiches the substrate W in the horizontal direction and holds the substrate W horizontally is adopted. Specifically, the spin chuck 5 has a spin motor 17, a lower spin shaft 18 integrated with a drive shaft of the spin motor 17, and a disk-shaped spin chuck 5 mounted substantially horizontally on the upper end of the lower spin shaft 18. Includes spin base 19 and.
The spin base 19 includes a horizontal circular upper surface 19a having an outer diameter larger than the outer diameter of the substrate W. On the upper surface 19a, a plurality of (three or more, for example, six) holding members 20 are arranged on the peripheral edge thereof. The plurality of sandwiching members 20 are arranged at an appropriate interval, for example, at an appropriate interval on the circumference corresponding to the outer peripheral shape of the substrate W on the upper peripheral edge portion of the spin base 19.

The spin chuck 5 is not limited to the holding type. For example, the back surface of the substrate W is vacuum-sucked to hold the substrate W in a horizontal position, and the spin chuck 5 rotates around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held by the spin chuck 5 may be adopted.
The facing member 8 includes a facing plate 21 and an upper spin shaft 22 coaxially provided on the facing plate 21. The facing plate 21 has a disk shape having a diameter substantially the same as or larger than that of the substrate W. The facing surface 7 forms the lower surface of the facing plate 21, and is circular so as to face the entire upper surface of the substrate W.

A cylindrical through hole 23 that vertically penetrates the facing plate 21 and the upper spin shaft 22 is formed in the central portion of the facing surface 7. The inner peripheral wall of the through hole 23 is partitioned by a cylindrical surface. An upper nozzle 24 extending vertically is inserted into (inside) the through hole 23.
An opposing member rotating unit 25 is coupled to the upper spin shaft 22. The facing member rotating unit 25 rotates the upper spin shaft 22 together with the facing plate 21 around the rotation axis A2. A facing member elevating unit 26 having a configuration including an electric motor, a ball screw, and the like is coupled to the facing plate 21. The facing member elevating unit 26 moves up and down the facing plate 21 together with the upper nozzle 24 in the vertical direction. The facing member evacuation unit 26 is located at a proximity position (position shown by a two-dot chain line in FIG. 2) in which the facing surface 7 of the facing plate 21 is close to the upper surface of the substrate W held by the spin chuck 5, and above the proximity position. The facing plate 21 and the upper nozzle 24 are moved up and down between the provided retracted positions (positions shown by solid lines in FIG. 2). The facing member elevating unit 26 can hold the facing plate 21 at each position between the proximity position and the retracted position.

The first treatment liquid discharge unit 11 includes a central treatment liquid discharge port 9, a central treatment liquid supply unit 27 for supplying a treatment liquid (for example, a chemical liquid) to the central treatment liquid discharge port 9, and an outer peripheral treatment liquid discharge port 10. And the outer peripheral treatment liquid supply unit 28 for supplying the chemical liquid to the outer peripheral treatment liquid discharge port 10.
The central processing liquid discharge port 9 is open so as to face the central portion of the upper surface of the substrate W held by the spin chuck 5. The central treatment liquid discharge port 9 is composed of a discharge port provided at the tip (lower end) of the upper nozzle 24.

The central treatment liquid supply unit 27 includes an upper nozzle 24, a first treatment liquid pipe 29 connected to the central treatment liquid discharge port 9, and a first treatment liquid valve for opening and closing the first treatment liquid pipe 29. 30 and a first flow rate adjusting valve 31 for adjusting the opening degree of the first processing liquid pipe 29 to adjust the discharge flow rate. Although not shown, the first flow rate adjusting valve 31 is a valve body having a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. And include. Other flow control valves have a similar configuration.

When the first treatment liquid valve 30 is opened, the chemical liquid is discharged from the central treatment liquid discharge port 9 toward the center of the upper surface of the substrate W. Further, the discharge flow rate of the chemical solution from the central processing liquid discharge port 9 can be changed by adjusting the opening degree of the first flow rate adjusting valve 31. The treatment liquid supplied to the central treatment liquid discharge port 9 contains a chemical solution. In this embodiment, for example, ozone water (ozone water containing a high concentration of ozone gas used in the resist removing treatment) can be exemplified as the chemical solution supplied to the central treatment liquid discharge port 9.

The outer peripheral processing liquid discharge port 10 is open so as to face the upper outer peripheral portion 6 of the substrate W held by the spin chuck 5. In this specification, for example, on the upper surface of a substrate W having an outer diameter of 450 mm, a region having a width of about 75 mm inside from the peripheral end surface of the substrate W is referred to as an upper surface outer peripheral portion 6.
In this embodiment, a plurality of outer peripheral treatment liquid discharge ports 10 are provided. From each outer peripheral treatment liquid discharge port 10, the chemical liquid is discharged toward the upper outer peripheral portion 6 of the substrate W. The plurality of outer peripheral treatment liquid discharge ports 10 are arranged on the circumference concentrically surrounding the rotation axis (second rotation axis) A2. The plurality of outer peripheral treatment liquid discharge ports 10 are arranged at equal intervals, for example, in the circumferential direction of the facing member 8.

The outer peripheral treatment liquid supply unit 28 includes a liquid storage unit 60 in which a chemical liquid can be stored. The liquid sump portion 60 includes a liquid sump groove 32 formed on the upper surface (the surface opposite to the facing surface 7) 21a of the facing plate 21. The outer peripheral treatment liquid supply unit 28 further has a communication hole 33 that communicates the bottom of the liquid reservoir 32 and each outer peripheral treatment liquid discharge port 10, and a first treatment liquid that supplies (replenishes) the chemical liquid to the liquid reservoir 32. Includes supply unit 34. The communication hole 33 is provided with a sufficiently small diameter as compared with the bottom area of the liquid storage groove 32.

As shown in FIGS. 3 and 4, the liquid storage groove 32 is an annular groove centered on the rotation axis A2, and the chemical solution can be stored in the annular groove 32. The liquid storage groove 32 is provided on the outer peripheral portion of the facing member 8. In this embodiment, the liquid reservoir 32 is arranged so as to cover the upper region of each outer peripheral treatment liquid discharge port 10. The liquid reservoir 32 has a rectangular cross section.
As shown in FIGS. 3 and 4, one communication hole 33 is provided corresponding to each outer peripheral treatment liquid discharge port 10. The shape and size of the cross section of the communication hole 33 is the same as that of the outer peripheral treatment liquid discharge port 10. In other words, each communication hole 33 opens in the facing surface 7 to form the outer peripheral treatment liquid discharge port 10. A tapered surface 50 centered on the communication hole 33 is formed around the communication hole 33 in the bottom of the liquid storage groove 32. The upper end of the communication hole 33 is opened at the bottom (center portion) of the tapered surface 50.

The cross-sectional area of the communication hole 33 is provided sufficiently small so that the chemical solution is not supplied to the outer peripheral treatment liquid discharge port 10 in a state where no fluid is flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7. There is. A force acts on the chemical solution stored in the liquid reservoir 32 toward the outer peripheral treatment liquid discharge port 10 formed at the bottom of the liquid reservoir 32 along with the weight of the chemical solution. However, since the cross-sectional area of the communication hole 33 is sufficiently small, the chemical solution does not enter the communication hole 33 due to the surface tension of the chemical solution.

As shown in FIG. 3, the facing surface 7 is provided with a protrusion 35 at a position facing the center of the upper surface of the substrate W held by the spin chuck 5. The protrusion 35 has an annular shape that concentrically surrounds the rotation axis A2. The cross-sectional shape of the protrusion 35 orthogonal to the circumferential direction of the opposing member is substantially triangular pyramidal. The outer peripheral treatment liquid discharge port 10 is formed at the lower end (tip) of the protrusion 35.
As shown in FIG. 3, the outer periphery of the substrate W as the fluid (in the first embodiment and the second embodiment, the chemical solution (treatment solution)) flows between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7. The processing fluid discharge port 10 and the communication hole 33 are depressurized. As shown in FIG. 3, when the pressure is reduced on the outer peripheral treatment liquid discharge port 10 and the communication hole 33 while the chemical solution is stored in the liquid storage groove 32, the chemical solution stored in the liquid storage groove 32 becomes Vencheri. Due to the effect, it is guided to the communication hole 33 and discharged from the outer peripheral treatment liquid discharge port 10. That is, by storing a sufficient amount of the chemical solution in the liquid storage groove 32, the chemical solution discharged from the central processing liquid discharge port 9 is interlocked with the flow between the upper peripheral portion 6 of the substrate W and the facing surface 7. Then, the chemical liquid can be discharged from the outer peripheral treatment liquid discharge port 10.

In this embodiment, since the cross-sectional area of the communication hole 33 is sufficiently small, the chemical solution is released from the outer peripheral treatment liquid discharge port 10 for the first time due to the Bencheri effect when the chemical solution flows between the outer peripheral portion of the upper surface of the substrate W and the facing surface 7. Is started to be discharged. When the chemical solution is not flowing between the outer peripheral portion 6 of the upper surface of the substrate and the facing surface 7, the chemical solution is not discharged from the outer peripheral treatment liquid discharge port 10, so that the liquid reservoir 32 is prior to the discharge timing of the outer peripheral treatment liquid discharge port 10. The chemical solution can be stored in the container, thereby preventing unintentional dropping of the solution.

Further, by providing the protrusion 35 on the facing surface 7, the flow velocity of the chemical solution flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral processing liquid discharge port 10 on the facing surface 7 can be increased. As a result, the amount of the chemical solution that is guided from the liquid storage groove 32 to the outer peripheral treatment liquid discharge port 10 through the communication hole can be increased. As a result, a sufficient flow rate of the chemical solution can be discharged from the outer peripheral treatment liquid discharge port 10.

On the other hand, as shown in FIG. 6, in a state where the chemical liquid is not stored in the liquid storage groove 32, that is, in a state where air is present inside the liquid storage groove 32, the upper surface outer peripheral portion 6 and the facing surface 7 of the substrate W When a gas (for example, an inert gas) flows between the two, the outer peripheral treatment liquid discharge port 10 and the communication hole 33 are depressurized accordingly. When the outer peripheral treatment liquid discharge port 10 and the communication hole 33 are decompressed, the air existing inside the liquid reservoir 32 is guided to the communication hole 33 by the Bencheri effect and discharged from the outer peripheral treatment liquid discharge port 10. To.

As shown in FIG. 2, the first treatment liquid supply unit 34 is interposed in the replenishment nozzle 36, the second treatment liquid pipe 37 connected to the replenishment nozzle 36, and the second treatment liquid pipe 37. Includes a second treatment liquid valve 38. The replenishment nozzle 36 is arranged so that its discharge port faces the liquid storage groove 32. When the second processing liquid valve 38 is opened, the chemical liquid is discharged from the replenishment nozzle 36 toward the liquid storage groove 32. The chemical solution supplied to the liquid reservoir 32 is stored in the liquid reservoir 32. The chemical solution stored in the liquid reservoir 32 is, for example, ozone water (ozone water containing a high concentration of ozone gas used in the resist removing treatment).

The rinse liquid supply unit 12 includes a rinse liquid nozzle 41. The rinse liquid nozzle 41 is, for example, a straight nozzle that discharges liquid in a continuous flow state, and is fixedly arranged above the spin chuck 5 with its discharge port facing the center of the upper surface of the substrate W. A rinse liquid pipe 42 to which the rinse liquid from the rinse liquid supply source is supplied is connected to the rinse liquid nozzle 41. A rinse liquid valve 43 for switching the discharge / supply stop of the rinse liquid from the rinse liquid nozzle 41 is interposed in the middle portion of the rinse liquid pipe 42. When the rinse liquid valve 43 is opened, the continuous flow rinse liquid supplied from the rinse liquid pipe 42 to the rinse liquid nozzle 41 is discharged from the discharge port set at the lower end of the rinse liquid nozzle 41. When the rinse liquid valve 43 is closed, the discharge of the rinse liquid from the rinse liquid pipe 42 to the rinse liquid nozzle 41 is stopped. The rinsing solution is, for example, deionized water (DIW), but is not limited to DIW, and may be carbonated water, electrolytic ionized water, hydrogen water, or hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). Good.

Further, each of the rinse liquid nozzles 41 does not need to be fixedly arranged with respect to the spin chuck 5, and is attached to, for example, an arm that can swing in a horizontal plane above the spin chuck 5. A so-called scan nozzle form in which the landing position of the rinse liquid on the upper surface of the substrate W is scanned by the shaking of the substrate W may be adopted.
As shown in FIG. 2, the processing unit 2 further supplies the inert gas to the tubular space between the outer circumference of the main body of the upper nozzle 24 and the inner circumference of the facing plate 21 (outer circumference of the through hole 23). It includes a first inert gas pipe 44 and a first inert gas valve 45 interposed in the first inert gas pipe 44. When the first inert gas valve 45 is opened, the inert gas from the inert gas supply source passes between the outer circumference of the main body of the upper nozzle 24 and the inner circumference of the facing plate 21, and the lower surface of the facing plate 21 passes. It is discharged downward from the central part. Therefore, when the first inert gas valve 45 is opened with the facing plate 21 arranged at a close position, the inert gas discharged from the central portion of the lower surface of the facing plate 21 is discharged from the upper surface of the substrate W and the facing plate. It spreads outward (in the direction away from the rotation axis A1) between the facing surface 7 of the 21 and the air between the substrate W and the facing plate 21 is replaced with the inert gas. The inert gas flowing in the first inert gas pipe 44 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas, and may be another inert gas such as helium gas or argon gas.

As shown in FIG. 2, the processing cup 13 is arranged outside the substrate W held by the spin chuck 5 (in the direction away from the rotation axis A1). The processing cup 13 surrounds the spin base 19. When the treatment liquid (ozone water droplets, water droplets, chemical liquid, rinsing liquid) is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing supplied to the substrate W The liquid is shaken off around the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 13a of the processing cup 13 opened upward is arranged above the spin base 19. Therefore, the processing liquid discharged around the substrate W is received by the processing cup 13. Then, the processing liquid received in the processing cup 13 is sent to a collection device or a waste liquid device (not shown).

FIG. 7 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
The control device 3 is configured by using, for example, a microcomputer. The control device 3 has an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit. The storage unit stores the program executed by the arithmetic unit.

The control device 3 controls the operations of the spin motor 17, the opposing member rotating unit 25, the opposing member elevating unit 26, and the like according to a predetermined program. Further, the control device 3 controls the opening and closing of the first processing liquid valve 30, the second processing liquid valve 38, the rinse liquid valve 43, the first inert gas valve 45, and the like. Further, the control device 3 adjusts the opening degree of the first flow rate adjusting valve 31.

FIG. 8 is a flow chart for explaining a processing example of the resist removing processing performed by the processing unit 2.
Hereinafter, a processing example of the resist removal treatment will be described with reference to FIGS. 2, 3 and 6 to 8.
When the substrate W is subjected to the resist removing treatment by the processing unit 2, the substrate W after the ion implantation treatment at a high dose is carried into the chamber 4 (step S1). It is assumed that the substrate W to be carried in has not been processed for ashing a resist (photoresist). That is, a pattern is formed on the surface of the substrate W, and a resist made of a photosensitive resin or the like is formed so as to cover a part or all of the pattern.

Specifically, in the control device 3, the substrate transfer robot CR (FIG. 3) in which the facing member 8 is arranged at the retracted position and the substrate W is held in a state where ozone water is not accumulated in the liquid reservoir groove 32. By letting the hand of (see 1) enter the inside of the chamber 4, the substrate W is handed over to the spin chuck 5 with its surface (pattern forming surface) facing upward. As a result, the substrate W is held by the spin chuck 5.

After that, the control device 3 starts the rotation of the substrate W by the spin motor 17 (step S2). The substrate W is accelerated to a predetermined liquid treatment rate (eg, about 800 rpm), increased, and then maintained at that liquid treatment rate.
Next, in order to peel the resist from the substrate W, an ozone water supply step (step S3) of supplying ozone water to the upper surface of the substrate W is performed. Specifically, the control device 3 controls the opposed member elevating unit 26 to arrange the opposing plate 21 at the first proximity position (the position indicated by the alternate long and short dash line in FIG. 2). When the facing plate 21 is in the first proximity position, the distance W1 between the upper surface of the substrate W and the facing surface 7 of the facing plate 21 is about 1 mm (between the upper surface of the substrate W and the lowermost portion of the protrusion 35). The interval W2 is about 0.3 mm), and in this state, the facing plate 21 shields the upper surface of the substrate W from the space around it.

After the facing plate 21 is arranged at the first proximity position, the control device 3 controls the facing member rotating unit 25 to rotate the facing plate 21 around the rotation axis A2. At this time, for example, the rotation direction of the facing plate 21 is the same as the rotation direction of the substrate W, and the rotation speed of the facing plate 21 is about 800 rpm, which is the same as the rotation of the substrate W.
After the facing plate 21 is arranged at the first proximity position, the control device 3 also opens the first processing liquid valve 30. By opening the first treatment liquid valve 30, ozone water is discharged from the central treatment liquid discharge port 9 toward the center of the upper surface of the substrate W (treatment liquid discharge step). The ozone water discharged from the central treatment liquid discharge port 9 receives centrifugal force due to the rotation of the substrate W and flows outward in the radial direction between the substrate W and the facing surface 7 of the facing member 8.

After the facing plate 21 is arranged at the first proximity position, the control device 3 further opens the second processing liquid valve 38. By opening the second treatment liquid valve 38, ozone water is discharged from the replenishment nozzle 36 toward the liquid storage groove 32 (treatment liquid supply step). The ozone water supplied to the liquid reservoir 32 is stored in the liquid reservoir 32.
The ozone water flowing outward in the radial direction between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7 reaches the outer peripheral portion 6 of the upper surface of the substrate W. At this time, as ozone water flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7, the outer peripheral treatment liquid discharge port 10 and the communication hole 33 are depressurized. , The ozone water stored in the liquid storage groove 32 is guided to the communication hole 33 by the Bencheri effect and discharged from the outer peripheral treatment liquid discharge port 10. As a result, ozone water is discharged from each outer peripheral treatment liquid discharge port 10 toward the upper outer peripheral portion 6 of the substrate W (treatment liquid discharge step). The space between the substrate W and the facing surface 7 is filled not only by the ozone water discharged from the central treatment liquid discharge port 9 but also by the ozone water discharged from the outer peripheral treatment liquid discharge port 10. After that, this state (liquid-tight state) is maintained.

In this way, while rotating the substrate W and the facing member 8 respectively, the entire area between the substrate W and the facing surface 7 is kept in a liquid-tight state of ozone water, and the upper surface of the substrate W is subjected to resist removal treatment with ozone water. Do. As a result, the resist is removed from the upper surface of the substrate W.
When a predetermined period elapses from the opening of the first treatment liquid valve 30, the control device 3 closes the first treatment liquid valve 30 and ends the ozone water supply step S3. After that, the control device 3 controls the opposing member elevating unit 26 to retract the opposing plate 21 to a retracted position (position shown by a solid line in FIG. 2).

Next, a rinsing step (step S4) of supplying the rinsing liquid to the substrate W is performed. Specifically, the control device 3 opens the rinse liquid valve 43 and discharges the rinse liquid from the rinse liquid nozzle 41 toward the center of the upper surface of the substrate W. The rinse liquid discharged from the rinse liquid nozzle 41 lands on the central portion of the upper surface of the substrate W. The rinse liquid deposited on the central portion of the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface of the substrate W toward the peripheral edge portion of the substrate W. As a result, the ozone water on the substrate W is swept outward by the rinsing liquid and discharged around the substrate W. As a result, the ozone water and the removed resist are washed away over the entire upper surface of the substrate W. When a predetermined period elapses from the start of the rinsing step S4, the control device 3 closes the rinsing liquid valve 43 and stops the discharge of the rinsing liquid from the rinsing liquid nozzle 41.

Next, a spin-drying step (step S5) of drying the substrate W is performed. Specifically, the control device 3 controls the opposed member elevating unit 26 to arrange the opposing plate 21 at the first proximity position (the position indicated by the alternate long and short dash line in FIG. 2).
Further, the control device 3 accelerates the substrate W to a drying rotation speed (high rotation speed, for example, several thousand rpm) higher than the rotation speeds in the ozone water supply step S3 and the rinse step S4 by controlling the spin motor 17. The substrate W is rotated at a drying rotation speed. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W and the substrate W dries. Further, the control device 3 controls the facing member rotating unit 25 to rotate the facing plate 21 in the rotation direction of the substrate W at substantially the same speed.

Further, in the spin-drying step S5, the control device 3 opens the first inert gas valve 45 and forms a cylinder between the outer circumference of the main body of the upper nozzle 24 and the inner circumference of the facing plate 21 (outer circumference of the through hole 23). The inert gas is supplied to the space. The inert gas supplied to the tubular space is discharged downward from the central portion of the lower surface of the facing plate 21, and the space between the upper surface of the substrate W and the facing surface 7 of the facing plate 21 is directed outward in the radial direction. It flows (in the direction away from the rotation axis A1). As a result, a stable air flow of the inert gas from the central portion to the peripheral portion of the substrate W is generated in the gap between the upper surface of the substrate W and the facing surface 7 of the facing plate 21, and the atmosphere near the upper surface of the substrate W is created. It is cut off from its surroundings. Further, in this state, ozone water (treatment) is not stored in the liquid storage groove 32.

In this state, that is, in the state where air is present inside the liquid reservoir 32, the inert gas flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7. Along with this, the outer peripheral treatment liquid discharge port 10 and the communication hole 33 are decompressed, and the air existing inside the liquid reservoir 32 is guided to the communication hole 33 by the Bencheri effect, and the outer peripheral treatment liquid discharge port 10 Is discharged from. As a result, air is discharged from each outer peripheral treatment liquid discharge port 10 toward the upper outer peripheral portion 6 of the substrate W. In addition to blowing the inert gas from the central portion of the lower surface of the facing plate 21, air is blown from the outer peripheral treatment liquid discharge port 10 to the outer peripheral portion 6 of the upper surface of the substrate W, so that the outer peripheral portion 6 of the upper surface of the substrate can be dried satisfactorily. it can. As a result, the drying performance of the substrate W in the spin drying step S5 can be improved.

Then, when a predetermined time elapses from the start of high-speed rotation of the substrate W, the control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 (step S6). After that, the control device 3 controls the opposing member elevating unit 26 to retract the opposing plate 21 to a retracted position (position shown by a solid line in FIG. 2).
Next, the substrate W is carried out from the chamber 4 (step S7). Specifically, the control device 3 causes the hand of the substrate transfer robot CR to enter the inside of the chamber 4. Then, the control device 3 causes the hand of the substrate transfer robot CR to hold the substrate W on the spin chuck 5. After that, the control device 3 retracts the hand of the substrate transfer robot CR from the chamber 4. As a result, the substrate W from which the resist has been removed from the surface is carried out from the chamber 4.

Further, in the treatment example shown in FIG. 8, the hydrogen peroxide solution (H ₂ O ₂ ) is applied to the upper surface (surface) of the substrate W prior to the execution of the ozone water supply step S3 or after the execution of the ozone water supply step S3. The hydrogen peroxide solution supply step may be performed.
Further, in the processing example shown in FIG. 8, after the completion of the rinsing step S4, a cleaning chemical solution supply step of supplying a cleaning chemical solution to the upper surface of the substrate W is executed in order to remove the resist residue from the upper surface of the substrate W. You may be. When the cleaning chemical solution supply step is executed, a second rinsing step of washing the chemical solution on the upper surface of the substrate W with the rinsing solution is further executed.

As described above, according to the first embodiment, not only the chemical liquid (ozone water) discharged from the central treatment liquid discharge port 9 but also the chemical liquid discharged from the outer peripheral treatment liquid discharge port 10 causes the substrate W and the facing surface 7 to come into contact with each other. The space is filled. Since the chemical solution is replenished between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7 by the discharge of the chemical solution from the outer peripheral treatment liquid discharge port 10, the chemical solution can be sufficiently distributed on the outer peripheral portion 6 of the upper surface of the substrate W. it can. As a result, not only the space between the central portion of the upper surface of the substrate W and the facing surface 7 but also the space between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7 can be satisfactorily filled with the chemical solution. A uniform resist removing process can be performed.

Further, as the processing liquid flows between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7, the outer peripheral processing liquid discharge port 10 and the communication hole 33 are depressurized. When the outer peripheral treatment liquid discharge port 10 and the communication hole 33 are depressurized while the treatment liquid is stored in the liquid storage groove 32, the chemical liquid stored in the liquid storage groove 32 becomes the communication hole 33 due to the venture effect. It is guided and discharged from the outer peripheral treatment liquid discharge port 10. By storing the chemical solution in the liquid reservoir 60, the chemical solution discharged from the central treatment liquid discharge port 9 is interlocked with the flow between the upper outer peripheral portion 6 of the substrate W and the facing surface 7, and the outer peripheral treatment liquid is linked. The chemical solution is discharged from the discharge port 10. As a result, the chemical solution can be discharged from the outer peripheral treatment liquid discharge port 10 without sending (pressing) the chemical solution to the outer peripheral treatment liquid discharge port 10, and therefore, the chemical solution can be discharged to the outer peripheral treatment liquid discharge port 10. The configuration for sending out can be omitted.

Further, as shown in FIG. 9, instead of the configuration in which the protrusion 35 is provided on the facing surface 7, an annular shape is formed on the facing surface 7 on the outer side of the facing plate 21 in the circumferential direction with respect to the outer peripheral treatment liquid discharge port 10. By providing the wall thickness portion 71, the flow velocity of the chemical liquid flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7 may be increased.
Further, as shown in FIG. 10, a bank portion 72 that regulates the outflow of the chemical solution stored in the liquid storage groove 32 from the liquid storage groove 32 may be provided on the facing plate 21. The bank portion 72 is provided so as to rise upward from the upper surface of the facing plate 21 along the outer peripheral surface of the liquid storage groove 32. The bank portion 72 has an annular shape that surrounds the outer circumference of the liquid storage groove 32. In the above-mentioned substrate processing example, in the ozone water supply step S3, the facing plate 21 is rotated at high speed around the rotation axis A1. Therefore, a large centrifugal force acts on the chemical liquid stored in the liquid storage groove 32, but the liquid storage By providing the bank portion 72 on the outer peripheral side of the groove 32, the outflow of the chemical liquid from the liquid reservoir portion 60 in the ozone water supply step S3 can be effectively suppressed. As a result, the chemical solution can be satisfactorily stored inside the liquid storage groove 32.

When the bank portion 72 is provided on the outer peripheral side of the liquid storage groove 32, as shown in FIG. 11, an eaves portion 73 that protrudes inward in the radial direction of the facing plate 21 is further provided from the upper end portion of the bank portion 72. You may be. The eaves portion 73 has a disk shape, for example. The embankment portion 72 and the eaves portion 73 may be provided integrally. In this case, the eaves portion 73 can more effectively suppress the outflow of the chemical solution from the liquid storage groove 32. As a result, the chemical solution can be stored in the liquid reservoir 60 even better.

FIG. 12 is a cross-sectional view for explaining a configuration example of the first processing liquid discharge unit 11 according to the second embodiment of the present invention.
In the second embodiment, the parts corresponding to the respective parts shown in the first embodiment are designated by the same reference numerals as those in FIGS. 1 to 11, and the description thereof will be omitted.
The difference between the substrate processing apparatus 201 according to the second embodiment and the substrate processing apparatus 1 according to the first embodiment is that the liquid reservoir portion included in the second processing liquid discharge unit 202 is a liquid reservoir groove 32. It is not a point that includes the liquid storage space (first liquid storage space 207, second liquid storage space 209, and third liquid storage space 211) formed inside the facing member 8. Further, the liquid reservoir discharge unit composed of the discharge port, the liquid reservoir portion and the communication hole is not only the outer peripheral portion of the facing member 8 but also the intermediate portion of the facing member 8 (the central portion of the facing member 8 and the outer peripheral portion of the facing member 8). It is also different from the first processing liquid discharge unit 11 in that two sets are further provided in the portion between the portions).

That is, the second processing liquid discharge unit 202 includes the first liquid sump discharge unit 203, the second liquid sump discharge unit 204, the third liquid sump discharge unit 205, and the first to third liquid sump. It includes a second treatment liquid supply unit 206 that supplies a chemical liquid (treatment liquid) to the discharge units 203 to 205.
The first liquid reservoir discharge unit 203 includes an outer peripheral processing liquid discharge port 10, a first liquid reservoir space 207, and a communication hole 33. The first liquid storage space 207 is a space forming an annular shape centered on the rotation axis A2. A chemical solution can be stored in the first liquid storage space 207. The first liquid storage space 207 is a space in which a chemical solution can be stored in an annular shape centered on the rotation axis A2. In this embodiment, the first liquid storage space 207 is arranged so that the first liquid storage space 207 covers the upper region of each outer peripheral treatment liquid discharge port 10. The first liquid reservoir space 207 has a rectangular cross section.

The second liquid reservoir discharge unit 204 includes a first intermediate discharge port 208, a second liquid reservoir space 209, and a communication hole 33. The first intermediate discharge port 208 is opened facing the first intermediate portion (the portion between the central portion of the upper surface and the outer peripheral portion 6 of the upper surface) on the upper surface of the substrate W held by the spin chuck 5. .. In this embodiment, a plurality of first intermediate discharge ports 208 are arranged on the circumference concentrically surrounding the rotation axis A2. The plurality of first intermediate discharge ports 208 are arranged at equal intervals, for example, in the circumferential direction of the facing member 8. The second liquid storage space 209 is a space forming an annular shape centered on the rotation axis A2 inside the first liquid storage space 207. A chemical solution can be stored in the second liquid storage space 209.

The cross-sectional area of the communication hole 33 is provided sufficiently small so that the chemical solution is not supplied to the first intermediate discharge port 208 in a state where no fluid is flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7. Has been done. A force acts on the chemical solution stored in the second liquid storage space 209 toward the first intermediate discharge port 208 formed at the bottom of the liquid storage groove 32 along with the weight of the chemical solution. However, since the cross-sectional area of the communication hole 33 is sufficiently small, the chemical solution does not enter the communication hole 33 due to the surface tension of the chemical solution.

The third liquid storage discharge unit 205 includes a second intermediate discharge port 210, a third liquid storage space 211, and a communication hole 33. The second intermediate discharge port 210 faces the second intermediate portion (the portion between the central portion of the upper surface and the first intermediate portion of the upper surface of the substrate W) on the upper surface of the substrate W held by the spin chuck 5. And it is open. In this embodiment, a plurality of second intermediate discharge ports 210 are arranged on the circumference concentrically surrounding the rotation axis A2. The plurality of second intermediate discharge ports 210 are arranged, for example, at equal intervals in the circumferential direction of the facing member 8. The third liquid storage space 211 is an annular space centered on the rotation axis A2 inside the second liquid storage space 209. A chemical solution can be stored in the third liquid storage space 211.

The cross-sectional area of the communication hole 33 is provided sufficiently small so that the chemical solution is not supplied to the second intermediate discharge port 210 in a state where no fluid is flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7. Has been done. A force acts on the chemical solution stored in the third liquid storage space 211 toward the second intermediate discharge port 210 formed at the bottom of the liquid storage groove 32 along with the weight of the chemical solution. However, since the cross-sectional area of the communication hole 33 is sufficiently small, the chemical solution does not enter the communication hole 33 due to the surface tension of the chemical solution.

The second treatment liquid supply unit 206 includes an annular liquid storage groove 212 provided on the upper spin shaft 22, a connection path 213 communicating with the liquid storage groove 212 and each liquid storage space 207, 209, 211, and a liquid. It includes a treatment liquid replenishment unit (not shown) that supplies (replenishes) the chemical solution to the reservoir 212. In the example of FIG. 12, the connection path 213 includes a common pipe 214 connected to the liquid storage groove 212 and a plurality of branch pipes 215 branched from the common pipe 214 and connected to the liquid storage spaces 207, 209, and 211, respectively. The configuration including is shown. Alternatively, the connection path may individually connect the liquid storage groove 212 and the liquid storage spaces 207, 209, 211.

Also in the ozone water supply step (S3 in FIG. 8) according to the second embodiment, ozone water is discharged from the central treatment liquid discharge port 9 in a state where the facing plate 21 is arranged at the first proximity position. The ozone water that flows outward in the radial direction between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7 flows from the central portion of the upper surface of the substrate W toward the outer peripheral portion 6 of the upper surface.
At this time, as ozone water flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the second intermediate portion discharge port 210 on the facing surface 7, the second intermediate portion discharge port 210 and the communication hole are communicated with each other. 33 is depressurized, and ozone water stored in the third liquid storage space 211 is guided to the communication hole 33 by the Bencheri effect and discharged from the second intermediate discharge port 210.

Further, as ozone water flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the first intermediate portion discharge port 208 on the facing surface 7, the first intermediate portion discharge port 208 and the communication hole 33 Is depressurized, and the ozone water stored in the second liquid storage space 209 is guided to the communication hole 33 by the Bencheri effect and discharged from the first intermediate discharge port 208.
Further, as ozone water flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7, the outer peripheral treatment liquid discharge port 10 and the communication hole 33 are depressurized. The ozone water stored in the first liquid storage space 207 is guided to the communication hole 33 by the Bencheri effect and discharged from the outer peripheral treatment liquid discharge port 10.

According to this embodiment, the same effect as in the case of the first embodiment is obtained.
Further, since the liquid storage portion includes the liquid storage spaces 207, 209, 211, the outflow of the chemical liquid from the liquid storage spaces 207, 209, 211 can be effectively suppressed in the ozone water supply step S3. As a result, the chemical solution can be well stored in the liquid reservoir.
FIG. 13 is an enlarged cross-sectional view for explaining a configuration example of the processing unit 302 according to the third embodiment of the present invention.

In the third embodiment, the parts corresponding to the respective parts shown in the first embodiment are designated by the same reference numerals as those in FIGS. 1 to 11, and the description thereof will be omitted.
The substrate processing apparatus 301 according to the third embodiment further includes a gas discharge unit 303 for supplying an inert gas (for example, nitrogen gas) to the central portion of the upper surface of the substrate W. In this respect, the substrate processing apparatus 301 is different from the substrate processing apparatus 1.

Further, the chemical solution used for the treatment in the substrate processing apparatus 301, that is, the chemical solution discharged from the first treatment liquid discharge unit 11, is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide solution, or organic. Acids (eg, citric acid, oxalic acid, etc.), organic alkalis (eg, TMAH: tetramethylammonium hydrochloride, etc.), organic solvents (eg, IPA: isopropyl alcohol, etc.), and surfactants, at least one of corrosion inhibitors. The containing liquid can be used.

The gas discharge unit 303 has a central gas discharge port 304 that opens facing the center of the upper surface of the substrate W held by the spin chuck 5, and is a gas nozzle that extends vertically and is inserted inside the upper nozzle 24. The 305, the second inert gas pipe 306 connected to the upstream end of the gas nozzle 305, the second inert gas valve 307 for opening and closing the second inert gas pipe 306, and the second inert gas. It includes a second flow rate adjusting valve 308 for adjusting the opening degree of the active gas pipe 306 to adjust the discharge flow rate. The central gas discharge port 304 is composed of a discharge port formed at the tip (lower end) of the upper nozzle 24 together with the central treatment liquid discharge port 9.

The control device 3 (see FIG. 7) controls the opening and closing of the second inert gas valve 307. Further, the control device 3 adjusts the opening degree of the second flow rate adjusting valve 308.
When the second inert gas valve 307 is opened, the inert gas is discharged from the central gas discharge port 304 toward the central portion of the upper surface of the substrate W. Further, the discharge flow rate of the inert gas from the central gas discharge port 304 can be changed by adjusting the opening degree of the second flow rate adjustment valve 308. When the second inert gas valve 307 is opened, the inert gas from the inert gas supply source is discharged downward from the central gas discharge port 304. Therefore, when the second inert gas valve 307 is opened while the facing plate 21 is arranged at the second proximity position, the inert gas discharged from the central portion of the lower surface of the facing plate 21 is discharged from the upper surface of the substrate W. The air between the substrate W and the facing surface 7 of the facing plate 21 spreads outward (in a direction away from the rotation axis A1), and the air between the substrate W and the facing plate 21 is replaced with an inert gas. The inert gas flowing in the second inert gas pipe 306 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas, and may be another inert gas such as helium gas or argon gas.

FIG. 14 is a flow chart for explaining a processing example of the chemical solution treatment performed by the processing unit 302.
Hereinafter, a treatment example of the chemical solution treatment will be described with reference to FIGS. 13 and 14. 2, FIG. 3 and FIG. 6 are also referred to as appropriate.
The control device 3 holds the hand of the substrate transfer robot CR (see FIG. 1) holding the substrate W in a state where the opposing member 8 is arranged at the retracted position and the chemical liquid is not accumulated in the liquid reservoir groove 32. By entering the inside of the chamber 4, the substrate W is delivered to the spin chuck 5 with its surface (pattern forming surface) facing upward (step S11: loading of the substrate). As a result, the substrate W is held by the spin chuck 5.

After that, the control device 3 starts the rotation of the substrate W by the spin motor 17 (step S12). The substrate W is accelerated to a predetermined liquid treatment rate (eg, about 800 rpm), increased, and then maintained at that liquid treatment rate.
Next, a chemical solution supply step (step S13) of supplying the chemical solution to the upper surface of the substrate W so as to treat the upper surface of the substrate W with the chemical solution is performed. Specifically, the control device 3 controls the facing member elevating unit 26 to arrange the facing plate 21 at the second proximity position. When the facing plate 21 is in the second proximity position, the distance W3 between the upper surface of the substrate W and the facing surface 7 of the facing plate 21 is about 5 mm (between the upper surface of the substrate W and the lowermost portion of the protrusion 35). The interval W4 is about 4.3 mm), and in this state, the facing plate 21 shields the upper surface of the substrate W from the space around it.

After the facing plate 21 is arranged at the second proximity position, the control device 3 controls the facing member rotating unit 25 to rotate the facing plate 21 around the rotation axis A2. At this time, for example, the rotation direction of the facing plate 21 is the same as the rotation direction of the substrate W, and the rotation speed of the facing plate 21 is about 800 rpm, which is the same as the rotation of the substrate W. Further, after the facing plate 21 is arranged at the second proximity position, the control device 3 also opens the first processing liquid valve 30 (see FIG. 2) and the second inert gas valve 307.

At this time, by opening the first treatment liquid valve 30, the chemical liquid is discharged from the central treatment liquid discharge port 9 toward the central portion of the upper surface of the substrate W (treatment liquid discharge step). The chemical liquid discharged from the central treatment liquid discharge port 9 receives centrifugal force due to the rotation of the substrate W and flows outward in the radial direction between the substrate W and the facing surface 7 of the facing member 8. Further, by opening the second inert gas valve 307, the inert gas is discharged from the central gas discharge port 304 toward the central portion of the upper surface of the substrate W. The inert gas discharged from the central gas discharge port 304 flows outward in the radial direction between the substrate W and the facing surface 7 of the facing member 8.

After the facing plate 21 is arranged at the second proximity position, the control device 3 further opens the second processing liquid valve 38. By opening the second treatment liquid valve 38, the chemical liquid is discharged from the replenishment nozzle 36 toward the liquid storage groove 32 (treatment liquid supply step). The chemical solution supplied to the liquid reservoir 32 is stored in the liquid reservoir 32.
The chemical solution flowing outward in the radial direction between the upper outer peripheral portion 6 of the substrate W and the facing surface 7 reaches the upper outer peripheral portion 6 of the substrate W. Therefore, a liquid film LF of the chemical solution is formed on the outer peripheral portion 6 of the upper surface of the substrate W. At this time, as shown in FIG. 13, a layer of the inert gas flowing in the outer peripheral direction is formed between the facing surface 7 and the liquid film LF of the chemical solution. As the inert gas flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7, the inside of the outer peripheral treatment liquid discharge port 10 and the communication hole 33 is depressurized. , The chemical liquid stored in the liquid storage groove 32 is guided to the communication hole 33 by the Bencheri effect and discharged from the outer peripheral treatment liquid discharge port 10. As a result, the chemical liquid is discharged from each outer peripheral treatment liquid discharge port 10 toward the upper outer peripheral portion 6 of the substrate W (treatment liquid discharge step). At this time, as shown in FIG. 15 described later, the chemical solution is discharged (sprayed) in a spray form from the outer peripheral treatment liquid discharge port 10. As a result, the chemical solution is supplied to the outer peripheral portion 6 of the upper surface of the substrate W. In this state, the chemical solution treatment is applied to the substrate W, and the upper surface of the substrate W is treated with the chemical solution.

When a predetermined period elapses from the opening of the first treatment liquid valve 30, the control device 3 closes the first treatment liquid valve 30. Further, the control device 3 closes the second inert gas valve 307. As a result, the chemical solution supply step S13 is completed. After that, the control device 3 controls the opposing member elevating unit 26 to retract the opposing plate 21 to a retracted position (position shown by a solid line in FIG. 2).

Next, a rinsing step (step S14) of supplying the rinsing liquid to the substrate W is performed. The rinsing step S14 is the same step as the rinsing step (S4 in FIG. 8) according to the first embodiment.
Next, a spin-drying step (step S15) of drying the substrate W is performed. The spin-drying step S15 is a step equivalent to the spin-drying step (S5 in FIG. 8) according to the first embodiment.

Then, when a predetermined time elapses from the start of the high-speed rotation of the substrate W, the control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 (step S16). After that, the control device 3 controls the opposing member elevating unit 26 to retract the opposing plate 21 to a retracted position (position shown by a solid line in FIG. 2).
Next, the substrate W is carried out from the chamber 4 (step S17). The unloading S17 of the substrate W is a process equivalent to the unloading of the substrate W (S7 in FIG. 8) according to the first embodiment.

As described above, according to the third embodiment, the chemical solution is replenished between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7 by discharging the chemical solution from the outer peripheral treatment liquid discharge port 10, so that the outer periphery of the upper surface of the substrate W is replenished. The chemical solution can be sufficiently distributed in the part 6. As a result, not only the space between the central portion of the upper surface of the substrate W and the facing surface 7 but also the space between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7 can be satisfactorily filled with the chemical solution. A uniform chemical treatment can be applied.

Further, as the inert gas flows between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7, the pressure inside the outer peripheral treatment liquid discharge port 10 and the communication hole 33 is reduced. When the inside of the outer peripheral treatment liquid discharge port 10 and the communication hole 33 is decompressed while the chemical solution is stored in the liquid storage groove 32, the chemical solution stored in the liquid storage groove 32 becomes the communication hole 33 due to the venture effect. Is guided by the outer peripheral treatment liquid discharge port 10. By storing the chemical solution in the liquid reservoir groove 32, the chemical solution is discharged from the outer peripheral treatment liquid discharge port 10 in conjunction with the flow of the inert gas between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7. .. As a result, the chemical solution can be discharged from the outer peripheral treatment liquid discharge port 10 without delivering the chemical solution to the outer peripheral treatment liquid discharge port 10, and therefore, a configuration for delivering the chemical solution to the outer peripheral treatment liquid discharge port 10. Can be omitted.

As in the modified example shown in FIG. 15, a bank portion 372 that regulates the outflow of the chemical solution stored in the liquid storage groove 32 from the liquid storage groove 32 may be provided in the facing plate 21. Further, as in the modified example shown in FIG. 15, the outer peripheral processing liquid discharge port 10 may be arranged near the outer peripheral end of the bottom portion of the liquid reservoir groove 32.
The bank portion 372 is provided so as to rise upward from the upper surface of the facing plate 21 along the outer peripheral surface of the liquid storage groove 32. The bank portion 372 has an annular shape that surrounds the outer circumference of the liquid storage groove 32.

In the above-mentioned substrate processing example, in the chemical solution supply step S13, the facing plate 21 is rotated at high speed around the rotation axis A1. Therefore, a large centrifugal force acts on the chemical solution stored in the liquid storage groove 32, but the liquid storage groove By providing the bank portion 372 on the outer peripheral side of the 32, the outflow of the chemical solution from the liquid reservoir portion 60 in the chemical solution supply step S13 can be effectively suppressed. As a result, the chemical solution can be satisfactorily stored inside the liquid storage groove 32.

As in the modified example shown in FIG. 16, the cross section of the bank portion 373 that regulates the outflow of the chemical solution stored in the liquid storage groove 32 from the liquid storage groove 32 approaches the rotation axis A1 side as it goes upward. It may have an arc shape. When a plurality of liquid storage grooves 32 are provided side by side in the radial direction of the facing plate 21, the height of the bank portion 373 corresponding to each liquid storage groove 32 is the height of the facing plate 21 as shown in FIG. It may be provided so as to become higher toward the outer peripheral side.

In FIG. 16, gas discharge ports 381 for discharging the inert gas for purging the liquid storage groove 32 are provided in each liquid storage groove 32. The inert gas is supplied to each gas discharge port 381 through a branch pipe 382 that branches from the gas nozzle 305.
FIG. 17 is a cross-sectional view for explaining a configuration example of the substrate processing apparatus 401 according to the fourth embodiment of the present invention. In the fourth embodiment, the parts corresponding to the respective parts shown in the second embodiment are designated by the same reference numerals as in the case of FIG. 13, and the description thereof will be omitted.

The difference between the third treatment liquid discharge unit 402 according to the fourth embodiment and the second treatment liquid discharge unit 202 according to the second embodiment is that instead of the second treatment liquid supply unit 206, The point is that the first to third liquid reservoir discharge units 203 to 205 are provided with a third processing liquid supply unit 406 that supplies the chemical liquid by gas pressure feeding.
Further, the substrate processing apparatus 401 according to the fourth embodiment further includes a gas discharge unit 303 for supplying an inert gas (for example, nitrogen gas) to the central portion of the upper surface of the substrate W, that is, the second embodiment. It is different from the substrate processing apparatus 201 according to the above.

The third processing liquid supply unit 406 includes an annular liquid storage space 412 provided on the upper spin shaft 22, a connection path 413 communicating with the liquid storage space 412 and each liquid storage space 207, 209, 211, and a liquid. A chemical pressure feeding unit 416 that gas-presses the chemical liquid stored in the storage space 412 to the liquid storage spaces 207, 209, 211 via the connection path 413, and a chemical liquid replenishment unit 417 that replenishes the chemical liquid into the liquid storage space 412. Including. In the example of FIG. 17, the connection path 413 includes a common pipe 414 connected to the liquid storage space 412 and a plurality of branch pipes 415 branched from the common pipe 414 and connected to the liquid storage spaces 207, 209, and 211, respectively. The configuration including is shown. Alternatively, the connection path may individually connect the liquid storage space 412 and the liquid storage spaces 207, 209, 211.

The chemical pressure feeding unit 416 includes a gas nozzle 418 that blows gas toward the liquid storage space 412, a third inert gas pipe 419 that supplies an inert gas such as nitrogen gas to the gas nozzle 418 in a high pressure state, and a third. It includes a third inert gas valve 420 that opens and closes the inert gas pipe 419 of 3. The inert gas flowing in the third inert gas pipe 419 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas, and may be another inert gas such as helium gas or argon gas.
The gas nozzle 418 faces the liquid reservoir space 412 via the first labyrinth structure 421. Since the first labyrinth structure 421 is provided, the inert gas is suppressed from the gas nozzle 418 to the liquid storage space 412 while suppressing the outflow of gas from the liquid storage space 412 regardless of the rotational state of the facing plate 21. Can be supplied.

When the third inert gas valve 420 is opened, the high-pressure inert gas is blown out from the gas nozzle 418. As a result, the chemical solution stored in the liquid storage space 412 is supplied to the liquid storage spaces 207, 209, 211.
The chemical replenishment unit 417 includes a replenishment nozzle 423 that discharges the chemical liquid toward the liquid storage space 412, a replenishment pipe 424 that supplies the chemical liquid to the replenishment nozzle 423, and a replenishment valve 425 that opens and closes the replenishment pipe 424. The replenishment nozzle 423 faces the liquid reservoir space 412 via the second labyrinth structure 426. Therefore, it is possible to supply the chemical solution from the replenishment nozzle 423 to the liquid storage space 412 while suppressing the outflow of gas from the liquid storage space 412 regardless of the rotational state of the facing plate 21.

The control device 3 (see FIG. 7) controls the opening and closing of the third inert gas valve 420 and the replenishment valve 425.
In this fourth embodiment, the same processing as that of the substrate processing example according to the third embodiment is performed. In the chemical solution supply step (S13 in FIG. 14), the control device 3 opens the third inert gas valve 420 with the facing plate 21 arranged at the second close position, and the liquid reservoir spaces 207, 209, The chemical solution is supplied toward 211. The chemical solution supplied to the liquid storage spaces 207, 209, 211 is stored inside the liquid storage spaces 207, 209, 211.

In this state, the control device 3 opens the first treatment liquid valve 30 to discharge the chemical liquid from the central treatment liquid discharge port 9, and opens the second inert gas valve 307 to be inert from the central gas discharge port 304. Discharge gas. The inert gas discharged from the central gas discharge port 304 flows outward in the radial direction between the substrate W and the facing surface 7 of the facing member 8, and the outer peripheral portion of the upper surface of the substrate W and the outer peripheral portion of the facing surface 7 It flows between the clubs. As the inert gas flows between the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7, the inside of the outer peripheral treatment liquid discharge port 10 and the communication hole 33 is depressurized and is stored in the liquid storage groove 32. The chemical solution is guided to the communication hole 33 by the Bencheri effect and is discharged from the outer peripheral treatment liquid discharge port 10. As a result, the chemical liquid is discharged from each outer peripheral treatment liquid discharge port 10 toward the upper peripheral portion 6 of the substrate W.

At this time, as the inert gas flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the second intermediate portion discharge port 210 on the facing surface 7, it communicates with the second intermediate portion discharge port 210. The inside of the hole 33 is depressurized, and the chemical solution stored in the third liquid storage space 211 is guided to the communication hole 33 by the Bencheri effect and discharged from the second intermediate discharge port 210.
Further, as the inert gas flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the first intermediate portion discharge port 208 on the facing surface 7, the first intermediate portion discharge port 208 and the communication hole are communicated with each other. The inside of 33 is depressurized, and the chemical solution stored in the second liquid storage space 209 is guided to the communication hole 33 by the Bencheri effect and discharged from the first intermediate discharge port 208.

Further, as the inert gas flows between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the outer peripheral treatment liquid discharge port 10 on the facing surface 7, the inside of the outer peripheral treatment liquid discharge port 10 and the communication hole 33 becomes The pressure is reduced and the chemical solution stored in the first liquid storage space 207 is guided to the communication hole 33 by the Bencheri effect and discharged from the outer peripheral treatment liquid discharge port 10.
According to this embodiment, the same effect as in the case of the third embodiment is obtained.

Although the four embodiments of the present invention have been described above, the present invention can be implemented in still other embodiments.
For example, in the first to fourth embodiments, the cross-sectional area of the communication hole 33 is set to the discharge ports 10, 208, 210 in a state where no fluid is flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the facing surface 7. It may be provided in a size such that a chemical solution (treatment solution) is supplied.

In the third embodiment, when the bank portion 372 (see FIG. 15) is provided on the outer peripheral side of the liquid reservoir groove 32, the eaves portion protruding inward in the radial direction from the upper end portion of the bank portion 372. (Equivalent to the eaves 73 in FIG. 11) may be further provided.
Further, in the second to fourth embodiments, on the facing surface 7, at the discharge ports 10, 208, 210, an annular meat is formed on the outer side of the facing plate 21 in the circumferential direction with respect to the discharge ports 10, 208, 210. By providing the thick portion 71, the flow velocity of the chemical solution flowing between the outer peripheral portion 6 of the upper surface of the substrate W and the periphery of the discharge ports 10, 208, 210 on the facing surface 7 may be increased.

Further, in the first to fourth embodiments, the discharge ports 10, 208, 210 are not arranged in the circumferential direction, but the discharge ports 10, 208, 210 form an annular shape centered on the rotation axis A2. You may. Further, the discharge ports 10, 208, 210 may not be provided in a plurality of positions along the circumferential direction of the facing plate 21, but may be arranged unevenly distributed in the circumferential direction of the facing plate 21.

Further, in the first to fourth embodiments, the protrusion 35 is intermittently provided only in the portion corresponding to the periphery of the discharge ports 10, 208, 210, not in the annular shape centered on the rotation axis A2. You may be.
Further, in the first to fourth embodiments, the protrusion 35 may be abolished.
Further, in the second embodiment, each of the liquid storage spaces 207, 209, and 211 may be the liquid storage groove 32 according to the first embodiment. That is, the liquid reservoir discharge unit composed of the discharge port, the liquid reservoir groove 32, and the communication hole 33 is provided not only on the outer peripheral portion of the facing member 8 but also on the intermediate portion of the facing member 8 (the central portion of the facing member 8 and the facing member 8). It may also be provided in the portion between the outer peripheral portion of the wall.

Further, in each of the above-mentioned substrate processing examples, it has been described that the substrate W is rotated around the rotation axis A2 in parallel with the supply of the chemical solution to the substrate W, but the chemical solution is applied to the substrate W with the substrate W stopped rotating. It may be supplied.
Further, in each of the above-mentioned substrate processing examples, the facing plate 21 is retracted to the retracted position in the rinsing step S4, but the opposing plate 21 may be arranged at a close position.

Further, when the chemical solution discharged from the central treatment liquid discharge port 9 has a liquid temperature higher than room temperature, it is cooled in the process of flowing through the upper surface of the substrate W, and therefore, the chemical solution is cooled at the outer peripheral portion 6 of the upper surface of the substrate W. Liquid temperature may drop. As a result, the processing rate at the outer peripheral portion 6 of the upper surface of the substrate W may be lower than that at the center of the upper surface of the substrate W.
In this case, a chemical solution having a liquid temperature higher than normal temperature (equivalent to the liquid temperature of the chemical solution discharged from the central treatment liquid discharge port 9) is discharged from the outer peripheral treatment liquid discharge port 10. As a result, the temperature of the chemical solution on the upper surface of the substrate W can be kept high, and the uniformity of the chemical solution treatment on the upper surface of the substrate W can be further improved.

Further, in the substrate treatment examples according to the first and second embodiments, the resist removal treatment using ozone water as the treatment liquid has been described as an example, but the present invention is used for other treatments (etching treatment and cleaning treatment). Can be applied. In this case, the chemical solution used as the treatment solution is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide solution, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali (for example, TMAH: A liquid containing at least one of a tetramethylammonium hydrochloride, etc.), an organic solvent (for example, IPA: isopropyl alcohol, etc.), a surfactant, and a corrosion inhibitor.

Further, in the first to fourth embodiments, the treatment liquid may contain water. The water is, for example, deionized water (DIW), but is not limited to DIW, and may be any of carbonated water, electrolytic ionized water, hydrogen water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). ..
Further, in the first to fourth embodiments, the case where the substrate processing devices 1 , 201, 301, 401 are devices for processing a disk-shaped substrate has been described, but the substrate processing devices 1 , 201, 301, 401 have been described. May be a device for processing a polygonal substrate such as a glass substrate for a liquid crystal display device.

In addition, various design changes can be made within the scope of the matters described in the claims.

1: Substrate processing device 3: Control device 5: Spin chuck (board holding unit)
6: Upper surface outer peripheral portion 7: Facing surface 8: Facing member 9: Central portion discharging port 10: Outer peripheral processing liquid discharge port (outer peripheral portion discharging port)
11: First processing liquid discharge unit 15: Liquid reservoir 21: Facing plate 21a: Upper surface (surface opposite to the facing surface)
32: Liquid reservoir 33: Communication hole 34: First processing liquid supply unit 35: Protrusion 71: Thick part 72: Bank 73: Eaves 201: Substrate processing device 202: Second processing liquid discharge unit 203 : 1st liquid reservoir discharge unit 206: 2nd processing liquid supply unit 207: 1st liquid reservoir space 208: 2nd liquid reservoir space 301: Substrate processing device 303: Gas discharge unit 401: Substrate processing device 406: Third processing liquid supply unit A1: Rotating axis W: Substrate

Claims (22)

A substrate holding unit that rotates the substrate around a vertical first rotation axis passing through the center of the substrate while holding the substrate horizontally.
A facing member having a facing surface facing the upper surface of the substrate,
An opposing member rotating unit for rotating the opposing member around a second rotation axis coaxial with the first rotation axis.
A central discharge port that opens toward the center of the upper surface of the substrate on the facing surface and an outer peripheral discharge port that opens toward the outer peripheral portion of the upper surface of the substrate on the facing surface are included. The treatment liquid is discharged from the outlet to supply the treatment liquid between the substrate and the facing surface, and the treatment liquid is discharged from the outer peripheral discharge port to supply the treatment liquid between the substrate and the facing surface. A substrate processing apparatus including a processing liquid discharge unit to be replenished. The substrate processing apparatus according to claim 1, wherein the processing liquid discharge unit is provided on the facing member and includes a liquid storage unit capable of storing the processing liquid discharged from the outer peripheral portion discharge port. The processing liquid discharge unit further includes a communication hole for communicating the inside of the liquid reservoir and the outer peripheral discharge port.
A fluid flows between the outer peripheral portion of the upper surface of the substrate and the periphery of the discharge port of the outer peripheral portion on the facing surface, and is stored in the liquid reservoir due to the decompression of the communication hole accompanying the flow of the fluid. The substrate processing apparatus according to claim 2, wherein the processing fluid is discharged from the outer peripheral discharge port through the communication hole. The substrate processing apparatus according to claim 3, wherein the fluid flowing between the outer peripheral portion of the upper surface of the substrate and the periphery of the discharge port of the outer peripheral portion on the facing surface is a processing liquid. The substrate processing apparatus according to claim 3 or 4, wherein the fluid flowing between the outer peripheral portion of the upper surface of the substrate and the periphery of the outer peripheral discharge port on the facing surface is a gas. In order to increase the flow velocity of the fluid flowing between the outer peripheral portion of the upper surface of the substrate and the periphery of the outer peripheral discharge port on the facing surface, a protrusion is provided on the facing surface around the outer peripheral discharge port. The substrate processing apparatus according to any one of claims 3 to 5. The outer periphery of the top surface in order to increase the outer peripheral portion and the flow velocity of the fluid flowing between the periphery of the outer peripheral portion discharge port in said facing surface, the outer peripheral portion before the discharge port SL opposing member in the facing surface of the substrate A thick portion is provided in the side region, which is adjacent to the outer peripheral discharge port and closer to the upper surface of the substrate than the region on the inner peripheral side of the facing member with respect to the outer peripheral discharge port on the facing surface. The substrate processing apparatus according to any one of claims 3 to 6. The cross-sectional area of the communication hole is such that the treatment liquid is not discharged from the outer peripheral portion discharge port in a state where the treatment liquid does not flow between the outer peripheral portion of the upper surface of the substrate and the periphery of the outer peripheral portion discharge port on the facing surface. The substrate processing apparatus according to any one of claims 3 to 7, which is set to such a size. The substrate processing apparatus according to any one of claims 2 to 8, wherein the liquid storage portion includes a liquid storage groove formed on a surface of the facing member opposite to the facing surface. The treatment liquid discharge unit is a replenishment nozzle that does not rotate with the rotation of the facing member, and discharges the treatment liquid toward the liquid reservoir of the facing member that is rotating around the second rotation axis. The substrate processing apparatus according to claim 9, further comprising a replenishment nozzle for discharging and supplying the processing liquid to the liquid reservoir. The substrate processing apparatus according to claim 9 or 10 , wherein the liquid reservoir further includes a bank portion that restricts the treatment liquid stored in the liquid reservoir from flowing out from the liquid reservoir. The substrate processing apparatus according to claim 11 , wherein the liquid reservoir further includes an eaves portion that projects inward in the radial direction of the facing member from the upper end portion of the bank portion. The substrate processing apparatus according to any one of claims 2 to 8, wherein the liquid storage portion further includes a liquid storage space formed inside the facing member. A treatment liquid supply unit for supplying the treatment liquid to the liquid reservoir is further included.
The substrate processing apparatus according to any one of claims 2 to 13 , wherein the processing liquid supply unit supplies the processing liquid to the liquid reservoir at the start of discharging the processing liquid from the central discharge port. The substrate processing apparatus according to any one of claims 1 to 14 , wherein a plurality of the outer peripheral discharge ports are provided along the circumferential direction of the facing member. The substrate processing apparatus according to any one of claims 1 to 15 , wherein the treatment solution contains a chemical solution. The substrate processing apparatus is an apparatus for removing resist from the upper surface of the substrate.
The substrate processing apparatus according to claim 16 , wherein the chemical solution contains ozone water for removing a resist from the substrate. The substrate processing device discharges the processing liquid from the central portion discharge port and the outer peripheral portion discharge port and supplies the treatment liquid between the substrate and the facing surface, whereby the substrate and the facing surface are brought into contact with each other. The substrate processing apparatus according to claim 17, wherein a liquid-tight state is maintained by the ozone water in between. A central discharge port that opens facing the center of the upper surface of the substrate on the facing surface of the facing member facing the upper surface of the substrate, and an outer peripheral discharge port that opens facing the outer peripheral portion of the upper surface of the substrate on the facing surface. A substrate processing method for treating the upper surface of the substrate with a processing liquid from a processing liquid discharge unit containing and.
The substrate, the substrate rotating step of rotating a vertical first axis of rotation around which passes through the center thereof,
In parallel with the substrate rotation step, an opposing member rotation step of rotating the opposing member around a second rotation axis coaxial with the first rotation axis.
In parallel with the substrate rotation step and the facing member rotation step , the treatment liquid is discharged from the central discharge port so as to fill the space between the substrate and the facing surface with the treatment liquid. supplying a process liquid between the substrate and the opposing surface, and a treatment liquid ejection step of replenishing the processing solution between said substrate by ejecting the processing liquid from the outer peripheral portion discharge port the facing surface seen including,
The processing liquid discharge unit includes a liquid storage unit capable of storing the processing liquid discharged from the outer peripheral discharge port.
A substrate processing method, wherein the liquid storage portion includes a liquid storage groove formed in an annular shape around the second rotation axis on a surface of the facing member opposite to the facing surface . In the treatment liquid discharge step, the treatment liquid is discharged from a replenishment nozzle that does not rotate with the rotation of the facing member toward the liquid storage groove of the facing member that is rotating around the second rotation axis. The substrate processing method according to claim 19, further comprising a treatment liquid supply step of supplying the treatment liquid to the liquid reservoir groove. The treatment liquid supplying step, at the beginning of the treatment liquid ejection step, the liquid reservoir including a more Engineering you supplying the processing liquid into the groove, the substrate processing method according to claim 20. Is the previous SL liquid reservoir arranged above the outer peripheral portion discharge port, and has the interior of the liquid reservoir and the outer peripheral portion discharge port communicate with each other through a communication hole, and the upper surface outer peripheral portion of the substrate The communication hole is decompressed with the flow of the fluid between the outer peripheral portion discharge port and the periphery of the facing surface, so that the processing liquid stored in the liquid reservoir portion is passed through the communication hole. It is designed to be discharged from the outer peripheral discharge port,
The substrate processing method is
When no processing liquid is pooled in the liquid reservoir, the substrate, is rotated at high speed about the first axis of rotation further comprising shaken dry and cause spin drying step, the one of claims 19 to 21 one The substrate processing method described in the section .

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