JP2024018422A - Substrate cleaning equipment and substrate cleaning method - Google Patents

Abstract

An object of the present invention is to appropriately clean a substrate having a convex portion. The substrate cleaning device includes a convex portion formed on at least a part of the edge of the upper surface of the substrate, and the substrate cleaning device includes a holding portion for holding the substrate and the convex portion of the substrate. a cleaning nozzle for discharging a first cleaning liquid toward a portion of the substrate, the first cleaning liquid is arranged such that the radially inner end of the substrate is located on the upper surface of the convex portion, and The radially outer end portion is discharged to a range located outside the substrate where it does not overlap the substrate in plan view. [Selection diagram] Figure 10

Description

The technology disclosed in this specification relates to a substrate cleaning technology. Substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and magneto-optical disks. substrates for photomasks, glass substrates for photomasks, ceramic substrates, field emission display (FED) substrates, solar cell substrates, and the like.

The manufacturing process of semiconductor devices, liquid crystal display devices, etc. includes a process in which a chemical solution is supplied to the substrate to perform a chemical solution treatment, and a process in which a cleaning solution such as pure water (DIW) is supplied to the substrate to perform a cleaning process. .

On the other hand, there are several types of substrate shapes to be processed, including, for example, a substrate having a convex portion on the edge (see, for example, Patent Document 1).

JP2021-48362A

When cleaning a substrate with a convex part as described above, the discharged cleaning liquid may hit the corners of the convex part and cause splashing, and the spray of the cleaning liquid caused by the splashing may contaminate the inside of the processing chamber. . Further, cleaning of the lower surface of the substrate tends to be insufficient.

The technology disclosed in the present specification was developed in view of the problems described above, and is a technology for appropriately cleaning a substrate having a convex portion.

A substrate cleaning apparatus that is a first aspect of the technology disclosed in the present specification is a substrate cleaning apparatus that cleans a substrate, and a convex portion is formed on at least a part of the edge of the upper surface of the substrate. The substrate cleaning apparatus includes a holding part for holding the substrate, and a cleaning nozzle for discharging a first cleaning liquid toward the convex part of the substrate, and the first cleaning liquid The radially inner end portion is located on the upper surface of the convex portion, and the radially outer end portion of the substrate is discharged to a range located outside the substrate that does not overlap with the substrate in plan view.

A substrate cleaning device that is a second aspect of the technology disclosed in the present specification is related to the substrate cleaning device that is the first aspect, and is related to the substrate cleaning device that is a second aspect of the technology disclosed in the present specification. The device further includes a central nozzle that discharges a second cleaning liquid, and the second cleaning liquid that is discharged to the central portion of the substrate reaches the convex portion at the edge of the substrate.

A substrate cleaning apparatus that is a third aspect of the technology disclosed in this specification is related to the substrate cleaning apparatus that is a second aspect, and further includes a rotating section for rotating the holding section, and The discharged second cleaning liquid flows from the central portion of the rotating substrate and reaches the convex portion.

A substrate cleaning apparatus that is a fourth aspect of the technology disclosed in the present specification is related to the substrate cleaning apparatus that is any one of the first to third aspects, and has an end that contacts an edge of the substrate. The device further includes an edge pin, and the first cleaning liquid is discharged into a range including the edge pin.

A substrate cleaning apparatus which is a fifth aspect of the technology disclosed in the present specification is related to the substrate cleaning apparatus which is any one of the first to fourth aspects, wherein the holding part is a Bernoulli chuck. Hold the board.

A substrate cleaning device that is a sixth aspect of the technology disclosed in the present specification is related to the substrate cleaning device that is any one of the first to fifth aspects, and is bonded to the lower surface of the substrate with an adhesive. It further includes a hydrophilic glass plate.

A substrate cleaning method that is a seventh aspect of the technology disclosed herein is a substrate cleaning method for cleaning a substrate, in which a convex portion is formed on at least a part of the edge of the upper surface of the substrate; a step of holding a substrate; and a step of discharging a first cleaning liquid toward the convex portion of the substrate; and is discharged to a range located outside the substrate where the radially outer end of the substrate does not overlap with the substrate in plan view.

According to at least the first and seventh aspects of the technology disclosed in the present specification, the discharge range of the first cleaning liquid discharged from the cleaning nozzle is limited to the convex portion of the substrate. It is possible to prevent the stepped portion of the convex portion from being included. Therefore, it is possible to suppress splashing of the first cleaning liquid discharged onto the substrate at the step portion.

In addition, objects, features, aspects, and advantages related to the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below.

1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is a diagram illustrating an example of a configuration of a control section whose example is illustrated in FIG. 1; FIG. 2 is a diagram schematically showing an example of a configuration of a processing unit according to an embodiment. FIG. 2 is a cross-sectional view showing an example of the shape of a substrate to be processed or cleaned in an embodiment. 5 is a cross-sectional view showing a state in which a protection plate is adhered to the lower surface of the substrate shown in FIG. 4. FIG. 4 is a diagram illustrating an example of a configuration related to a gas flow path among the configurations of the spin chuck shown in FIG. 3. FIG. It is a top view of a plate. 3 is a flowchart showing operations in a processing unit among operations of the substrate processing apparatus. FIG. 3 is a diagram for explaining the positional relationship between an edge nozzle and a substrate. It is a figure which shows the example of the cleaning liquid discharged from an edge nozzle. FIG. 3 is a diagram for explaining the positional relationship between an edge nozzle and a substrate. It is a figure which shows the example of the cleaning liquid discharged from an edge nozzle.

Embodiments will be described below with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for technical explanation, but these are merely examples, and not all of them are necessarily essential features for the embodiments to be implemented.

Note that the drawings are schematically illustrated, and for convenience of explanation, structures may be omitted or simplified as appropriate in the drawings. Further, the mutual relationship between the sizes and positions of the structures shown in different drawings is not necessarily described accurately and may be changed as appropriate. Further, even in drawings such as plan views that are not cross-sectional views, hatching may be added to facilitate understanding of the content of the embodiments.

In addition, in the following description, similar components are shown with the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

In addition, in the description provided in the specification of this application, when a component is described as "comprising," "includes," or "has," unless otherwise specified, exclusions that exclude the presence of other components are also used. It's not an expression.

Furthermore, even if ordinal numbers such as "first" or "second" are sometimes used in the description of the present specification, these terms will not be used to facilitate understanding of the content of the embodiments. These ordinal numbers are used for convenience and the content of the embodiments is not limited to the order that can occur based on these ordinal numbers.

In addition, in the description given in the specification of this application, expressions such as "...axis positive direction" or "...axis negative direction" refer to the direction along the arrow of the illustrated...axis as the positive direction, and the illustrated...axis The direction opposite to the arrow is the negative direction.

In addition, in the description provided herein, specific positions or directions such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back" Even if terms that mean It is independent of the position or direction of the

In addition, in the description provided in the specification of this application, when "...upper surface" or "...lower surface" etc. are described, in addition to the upper surface itself or the lower surface itself of the target component, This also includes a state in which other components are formed on the upper or lower surface of the. That is, for example, when it is described as "B provided on the upper surface of A", it does not prevent another component "C" from being interposed between A and B.

<Embodiment>
The substrate processing apparatus according to this embodiment will be described below. The substrate processing apparatus is an apparatus that performs substrate processing including cleaning of the substrate.

<About the configuration of the substrate processing equipment>
FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 1 according to the present embodiment. The substrate processing apparatus 1 includes a load port 601, an indexer robot 602, a center robot 603, a control section 90, and at least one processing unit 600 (four processing units in FIG. 1).

The processing unit 600 is a single-wafer type device that can be used for substrate processing, and specifically, it is a device that performs processing to remove organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used resist film. The resist film is used, for example, as an implantation mask for an ion implantation process.

Note that the processing unit 600 can include a chamber 180. In that case, by controlling the atmosphere within the chamber 180 by the control unit 90, the processing unit 600 can perform substrate processing in a desired atmosphere.

The control unit 90 can control the operation of each component in the substrate processing apparatus 1 (shutter 50C, adjustment valve 56, adjustment valve 62, rotational drive source 152A, rotational drive source 160A, rotational drive unit 193, etc., which will be described later). can. The carrier C is a container that accommodates the substrate W. Further, the load port 601 is a container holding mechanism that holds a plurality of carriers C. The indexer robot 602 can transport the substrate W between the load port 601 and the substrate platform 604. The center robot 603 can transport the substrate W between the substrate platform 604 and the processing unit 600.

With the above configuration, the indexer robot 602, the substrate platform 604, and the center robot 603 function as a transport mechanism that transports the substrate W between the respective processing units 600 and the load port 601.

The unprocessed substrate W is taken out from the carrier C by the indexer robot 602. The unprocessed substrate W is then delivered to the center robot 603 via the substrate platform 604.

The center robot 603 carries the unprocessed substrate W into the processing unit 600. The processing unit 600 then processes the substrate W.

The substrate W that has been processed in the processing unit 600 is taken out from the processing unit 600 by the central robot 603 . Then, the processed substrate W passes through another processing unit 600 as necessary, and then is delivered to the indexer robot 602 via the substrate platform 604. The indexer robot 602 carries the processed substrate W into the carrier C. Through the above steps, the substrate W is processed.

FIG. 2 is a diagram showing an example of the configuration of the control section 90 shown in FIG. 1. As shown in FIG. The control unit 90 may be configured by a general computer having an electric circuit. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read only memory (ROM) 92, and a random access memory (RAM). ) 93, a recording device 94, an input section 96, a display section 97, a communication section 98, and a bus line 95 interconnecting these.

The ROM 92 stores basic programs. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The recording device 94 is configured by a nonvolatile recording device such as a flash memory or a hard disk device. The input unit 96 is configured with various switches or a touch panel, and receives input setting instructions such as processing recipes from the user. The display section 97 is composed of, for example, a liquid crystal display device and a lamp, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a local area network (LAN) or the like.

A plurality of modes for controlling each configuration in the substrate processing apparatus 1 of FIG. 1 are preset in the recording device 94. When the CPU 91 executes the processing program 94P, one of the plurality of modes described above is selected, and each configuration is controlled in the selected mode. Note that the processing program 94P may be recorded on an external recording medium. Using this recording medium, the processing program 94P can be installed in the control unit 90. Further, some or all of the functions executed by the control unit 90 do not necessarily need to be realized by software, and may be realized by hardware such as a dedicated logic circuit.

FIG. 3 is a diagram schematically showing an example of the configuration of processing unit 600 according to this embodiment. Note that, in order to make the configuration easier to understand, some components may be omitted or simplified in the drawings.

The processing unit 600 performs, on the substrate W, a fluid process using a processing liquid (that is, a processing liquid including a chemical solution, a cleaning liquid, or a rinsing liquid) or a gas, a process using electromagnetic waves such as ultraviolet rays, or a physical cleaning process ( For example, various treatments (such as cleaning treatment or etching treatment) such as brush cleaning or spray nozzle cleaning are performed.

As an example shown in FIG. 3, the processing unit 600 includes a box-shaped processing chamber 50 having an internal space, and a center portion of the substrate W while holding one substrate W in a horizontal position within the processing chamber 50. A spin chuck 51 that rotates the substrate W around a vertical rotation axis Z1 passing through the substrate W, and a cylindrical processing cup 511 that surrounds the spin chuck 51 around the rotation axis Z1 of the substrate W are provided.

The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B for carrying the substrate W into and out of the processing chamber 50 is formed in the partition wall 50A.

The opening 50B is opened and closed by a shutter 50C. The shutter 50C is moved between a closed position (indicated by a two-dot chain line in FIG. 3) that covers the opening 50B and an open position (shown in FIG. (indicated by a solid line).

When loading and unloading the substrate W, the center robot 603 accesses the inside of the processing chamber 50 through the opening 50B using a robot hand. Thereby, an unprocessed substrate W can be placed on the upper surface of the spin chuck 51, or a processed substrate W can be removed from the spin chuck 51.

As an example is shown in FIG. 3, the spin chuck 51 includes a plate 101 facing the lower surface of the substrate W, a rotating shaft 192 connected to the lower surface of the plate 101, and rotating the rotating shaft 192 around the rotating axis Z1. A rotation drive section 193 is provided.

As an example shown in FIG. 3, the processing unit 600 includes a central nozzle 52 that discharges a cleaning liquid such as deionized water (DIW) toward the center of the upper surface of the substrate W held by the spin chuck 51; An arm 152 to which a nozzle 52 is attached at the tip, a supply pipe 54 that guides the cleaning liquid from a cleaning liquid supply source (not shown here) to the central nozzle 52, and an adjustment valve that opens and closes the inside of the supply piping 54. 56. Note that although the present embodiment shows a case where the cleaning liquid is discharged from the central nozzle 52, the processing liquid discharged from the central nozzle 52 may be a chemical liquid for substrate processing.

The arm 152 includes a rotational drive source 152A and an arm portion 152B that is rotatable by the rotational drive source 152A attached to one end and has the central nozzle 52 attached to the other end.

In the arm 152, when the arm portion 152B is rotated by the rotational drive source 152A, the central nozzle 52 attached to the tip of the arm portion 152B is movable along the upper surface of the substrate W held by the spin chuck 51. Become. That is, the central nozzle 52 attached to the tip of the arm portion 152B becomes movable in the horizontal direction. Here, the drive of the rotational drive source 152A is controlled by the control section 90.

The opening and closing of the adjustment valve 56 is controlled by a control section 90. When cleaning liquid is supplied to the central nozzle 52, the regulating valve 56 is opened. On the other hand, when the supply of cleaning liquid to the central nozzle 52 is stopped, the adjustment valve 56 is closed.

Further, as an example shown in FIG. 3, the processing unit 600 includes an edge nozzle 60 that discharges a cleaning liquid such as deionized water (DIW) toward the edge of the upper surface of the substrate W held on the spin chuck 51. , an arm 160 having an edge nozzle 60 attached to its tip, a supply pipe 61 that supplies cleaning liquid from a cleaning liquid supply source (not shown here) to the edge nozzle 60 , and from the supply piping 61 . An adjustment valve 62 that switches between supplying and stopping the supply of cleaning liquid to the edge nozzle 60 is provided.

The arm 160 includes a rotational drive source 160A and an arm portion 160B that is rotatable by the rotational drive source 160A attached to one end and has an edge nozzle 60 attached to the other end.

In the arm 160, the edge nozzle 60 attached to the tip of the arm part 160B can move along the upper surface of the substrate W held by the spin chuck 51 by rotating the arm part 160B by the rotational drive source 160A. becomes. That is, the edge nozzle 60 attached to the tip of the arm portion 160B becomes movable in the horizontal direction. Here, the drive of the rotational drive source 160A is controlled by the control section 90.

While the cleaning liquid is being supplied to the substrate W by the central nozzle 52, the cleaning liquid is also supplied to the substrate W from the edge nozzles 60, thereby effectively washing away foreign matter adhering to the substrate W, etc. can. Details will be described later.

The processing cup 511 is provided so as to surround the spin chuck 51, and is moved up and down in the vertical direction by a motor (not shown). The upper part of the processing cup 511 moves up and down between an upper position where the upper end is above the substrate W held by the spin chuck 51 and a lower position where the upper end is below the substrate W.

The processing liquid splashed outward from the upper surface of the substrate W is received by the inner surface of the processing cup 511. The processing liquid received by the processing cup 511 is appropriately drained to the outside of the processing chamber 50 through a liquid drain port 513 provided at the bottom of the processing chamber 50 and inside the processing cup 511.

Furthermore, an exhaust port 515 communicating with the processing cup 511 is provided on the side of the processing chamber 50 . The atmosphere inside the processing chamber 50 is appropriately exhausted to the outside of the processing chamber 50 through the exhaust port 515 .

<About the shape of the board>
The substrate W has a thin flat plate shape. The substrate W has a substantially circular shape in plan view. The substrate W has a convex portion 12 formed at the edge and a main portion 13. In FIG. 4, it is assumed that the convex portion 12 is provided over the entire circumference of the substrate W, but the convex portion 12 may be provided on a part of the circumference of the substrate W.

The main portion 13 is a portion of the substrate W located inside the convex portion 12 . A semiconductor device is formed in main portion 13 . The convex portion 12 has a convex shape relative to the main portion 13.

FIG. 4 is a cross-sectional view showing an example of the shape of the substrate W to be processed or cleaned in this embodiment. Moreover, FIG. 5 is a sectional view showing a state in which the protection plate 15 is adhered to the lower surface of the substrate W shown in FIG. 4.

The substrate W has a recess 14 formed by the main portion 13 being recessed more than the protrusion 12 . The recessed portion 14 is formed by, for example, a grinding process. In FIG. 5, a glass protection plate 15 is adhered to the surface of the substrate W opposite to the surface on which the recess 14 is formed (ie, the lower surface of the substrate W). The protective plate 15 is hydrophilic. The protection plate 15 is attached to the substrate body 11, for example.

The main portion 13 of the substrate W has a thickness T1. Further, the combined thickness of the main portion 13 of the substrate W and the protection plate 15 is the thickness T3. The thickness T1 is, for example, 10 [μm] or more and 200 [μm] or less. The thickness T3 is, for example, 800 [μm] or more and 1200 [μm] or less.

Note that the substrate W may be composed only of the substrate body 11, or may include at least one of a resin coating, a resin tape, a resin sheet, and a resin film in addition to the substrate body 11.

The convex portion 12 of the substrate W has a thickness T4. Further, the combined thickness of the convex portion 12 of the substrate W and the protective plate 15 is a thickness T6. The thickness T4 is, for example, 600 [μm] or more and 1000 [μm] or less. The thickness T6 is, for example, 1400 [μm] or more and 2200 [μm] or less.

FIG. 6 is a diagram showing an example of a configuration related to a gas flow path among the configurations of the spin chuck 51 shown in FIG. 3. In FIG. 6, illustration of the rotation drive unit 193 and the like is omitted for simplicity.

The spin chuck 51 includes a plate 101. Plate 101 has a substantially disk shape. Plate 101 has a top surface 102. Upper surface 102 is approximately horizontal. Upper surface 102 is generally flat.

The rotation shaft 192 is connected to the lower part of the plate 101. The rotation shaft 192 rotates the plate 101 by driving a rotation drive unit 193 (not shown). By doing so, the plate 101 rotates around the rotation axis A3. The rotation axis A3 is parallel to the Z-axis direction. The rotation axis A3 passes through the center of the plate 101.

FIG. 7 is a plan view of the plate 101. The upper surface 102 of the plate 101 is circular in plan view. The upper surface 102 of the plate 101 is larger than the substrate W in plan view.

The spin chuck 51 includes a plurality of (for example, 30) fixing pins 103. The fixing pin 103 supports the edge of the substrate W from below. Each fixing pin 103 is fixed to the plate 101.

The fixing pin 103 is arranged at the edge of the upper surface 102 of the plate 101. The fixing pins 103 are arranged on the circumference around the rotation axis A3 in plan view. The respective fixing pins 103 are spaced apart from each other.

Referring to FIGS. 6 and 7, the fixing pin 103 protrudes upward from the top surface 102 of the plate 101 (in the positive Z-axis direction). The fixing pin 103 contacts the lower surface 16 of the substrate W (the lower surface of the convex portion 12 in FIG. 4 or the lower surface of the edge of the protection plate 15 in FIG. 5). Thereby, the fixing pins 103 support the substrate W at a position higher than the upper surface 102 of the plate 101. In FIG. 7, the substrate W supported by the fixing pins 103 is shown by broken lines.

The fixing pin 103 does not contact the upper surface 17 of the substrate W. The fixing pins 103 allow the substrate W to move upward relative to the fixing pins 103. The fixing pin 103 does not come into contact with the edge 20 of the substrate W (ie, the side surface of the substrate W). The fixing pins 103 themselves allow the substrate W to slide relative to the fixing pins 103. In this way, the fixing pins 103 themselves do not hold the substrate W.

The spin chuck 51 includes a gas outlet 104. Gas outlet 104 is formed on top surface 102 of plate 101 . The gas outlet 104 is arranged at a position overlapping the substrate W supported by the fixing pin 103 in plan view. The gas outlet 104 blows out gas upward (in the positive direction of the Z-axis). The gas outlet 104 connects the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W supported by the fixing pin 103 (the lower surface of the convex portion 12 in FIG. 4 or the lower surface of the edge of the protective plate 15 in FIG. 5). In between, blow out the gas. The gas outlet 104 blows gas onto the substrate W from a position below the substrate W supported by the fixing pins 103 . Gas is supplied between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103.

The gas flows along the lower surface 16 of the substrate W supported by the fixing pins 103. As a result, the gas outlet 104 sucks the substrate W. Specifically, negative pressure is created by the gas flowing along the lower surface 16 of the substrate W. That is, the atmospheric pressure that the lower surface 16 of the substrate W receives is smaller than the atmospheric pressure that the upper surface 17 of the substrate W receives. Then, a downward force acts on the substrate W according to Bernoulli's principle (Bernoulli chuck). That is, the substrate W is sucked downward. The substrate W is sucked toward the gas outlet 104 and the plate 101. However, the gas outlet 104 does not contact the substrate W. Further, the plate 101 also does not come into contact with the substrate W.

The substrate W is supported and kept in a predetermined position by the gas outlet 104 sucking the substrate W downward and by the fixing pins 103 coming into contact with the lower surface 16 of the substrate W. Due to the suction force acting on the substrate W, the substrate W does not slide horizontally with respect to the fixing pins 103. That is, the spin chuck 51 holds the substrate W.

The gas outlet 104 includes one outlet 105 and a plurality of outlets 106. The air outlet 105 is arranged at the center of the upper surface 102 of the plate 101. The air outlet 105 is arranged on the rotation axis A3 of the plate 101. The air outlet 106 is arranged radially outward of the rotation axis A3 of the plate 101 than the air outlet 105 is. Further, the air outlet 106 is arranged radially inward of the rotation axis A3 of the plate 101 than the fixing pin 103. The air outlets 106 are arranged on a circumference around the rotation axis A3 in plan view.

The spin chuck 51 includes a gas supply path 107 and a gas supply path 108. The gas supply path 107 supplies gas to the outlet 105 . The gas supply path 108 supplies gas to the outlet 106 . A portion of the gas supply path 107 and a portion of the gas supply path 108 are formed inside the plate 101. Gas supply path 107 has a first end and a second end. A first end of gas supply path 107 is connected to gas supply source 109 . A second end of the gas supply path 107 is connected to the air outlet 105. Gas supply path 108 has a first end and a second end. A first end of the gas supply path 108 is connected to a gas supply source 109. A second end of the gas supply path 108 is connected to the air outlet 106. The gas supplied to the outlet 105 and the outlet 106 is, for example, nitrogen gas or air. The gas supplied to the outlet 105 and the outlet 106 is, for example, high pressure gas or compressed gas.

The spin chuck 51 includes a blowout adjustment section 111 and a blowout adjustment section 112. The blowout adjustment section 111 is provided in the gas supply path 107. The blowout adjustment section 112 is provided in the gas supply path 108. The blowout adjustment unit 111 adjusts the flow rate of gas blown out from the blowout port 105 . That is, the blow-off adjustment section 111 adjusts the flow rate of gas supplied to the blow-off port 105. The blowout adjustment unit 112 adjusts the flow rate of gas blown out from the blowout port 106 . That is, the blowout adjustment unit 112 adjusts the flow rate of gas supplied to the blowout port 106. As the flow rate of gas blown out from the blow-off port 105 increases, the suction force acting on the substrate W increases. As the flow rate of gas blown out from the blow-off port 106 increases, the suction force acting on the substrate W increases.

The blowout adjustment section 111 and the blowout adjustment section 112 can operate independently of each other. Therefore, the flow rate of the gas blown out by the outlet 105 and the flow rate of the gas blown out by the outlet 106 can be adjusted independently from each other. The blowout adjustment section 111 and the blowout adjustment section 112 each include, for example, a flow rate adjustment valve. The blowout adjustment section 111 and the blowout adjustment section 112 may each further include an on-off valve.

As shown in FIG. 7, the spin chuck 51 includes a plurality of (for example, six) position adjustment pins 113. Position adjustment pin 113 is supported by plate 101. The position adjustment pin 113 is movable in the horizontal direction with respect to the plate 101. By moving the position adjustment pin 113 with respect to the plate 101, the position adjustment pin 113 can come into contact with the substrate W supported by the fixed pin 103 and move away from the substrate W supported by the fixed pin 103. You can also do that. More specifically, the position adjustment pin 113 can come into contact with the edge 20 of the substrate W supported by the fixing pin 103. The position adjustment pin 113 adjusts the position of the substrate W supported by the fixed pin 103. The position adjustment pin 113 adjusts the position of the substrate W in the horizontal direction. The position adjustment pin 113 positions the center J of the substrate W supported by the fixed pin 103 on the rotation axis A3 of the plate 101.

In this embodiment, the position of the position adjustment pin 113 in contact with the substrate W is referred to as the "adjustment position." Further, the position of the position adjustment pin 113 that is away from the substrate W is referred to as a "retreat position". The position adjustment pin 113 is movable between an adjustment position and a retracted position.

The position adjustment pin 113 is arranged at the edge of the upper surface 102 of the plate 101. The position adjustment pins 113 are arranged on the circumference around the rotation axis A3 in plan view. The position adjustment pin 113 is arranged at approximately the same height as the substrate W supported by the fixed pin 103.

The spin chuck 51 includes a plurality of (for example, six) lift pins 116. The lift pins 116 are arranged at the periphery of the upper surface 102 of the plate 101 . The position adjustment pins 113 are arranged on the circumference around the rotation axis A3 in plan view.

Lift pin 116 is supported by plate 101. The lift pin 116 is supported so as to be movable in the vertical direction (Z-axis direction) with respect to the plate 101. Lift pins 116 support substrate W. The lift pins 116 move the substrate W supported by the lift pins 116 in the vertical direction (Z-axis direction).

By being located at the upper position, the lift pins 116 facilitate the transfer of the substrate W to the central robot 603 when the substrate W is carried in and carried out. Furthermore, the lift pins 116 transfer the substrate W to the fixing pins 103 by being located at the lower position. After the lift pins 116 pass the substrate W to the fixing pins 103, the lift pins 116 further move downward relative to the plate 101 and separate from the substrate W supported by the fixing pins 103.

<About the operation of the substrate processing equipment>
Next, an example of the operation of the substrate processing apparatus 1 will be described with reference to FIG. 8. Specifically, a substrate processing method including cleaning of the substrate W will be described. Note that FIG. 8 is a flowchart showing the operation in the processing unit 600 among the operations of the substrate processing apparatus 1.

The indexer robot 602 transports the substrate W from the carrier C at the load port 601 to the substrate platform 604. The center robot 603 transports the substrate W from the substrate platform 604 to one processing unit 600. The processing unit 600 processes the substrate W. The center robot 603 transports the substrate W from the processing unit 600 to the substrate platform 604. The indexer robot 602 transports the substrate W from the substrate platform 604 to the carrier C at the load port 601.

In the processing unit 600, the ends and lower surface of the substrate W are supported by a plurality of guide pins and fixing pins 103. As a result, the substrate W will be held by the spin chuck 51 for the time being.

Here, by appropriately controlling the blowout adjustment section 111 and the blowout adjustment section 112 by the control section 90, inert gas such as nitrogen is blown out from the blowout port 105 and the blowout port 106. As a result, the gas blown out from the air outlet 105 is blown onto the center of the lower surface of the substrate W, and further flows radially outward of the substrate W. Further, the gas blown out from the blow-off port 106 is blown onto the peripheral portion of the lower surface of the substrate W while being inclined radially outward, and further flows radially outward of the substrate W. The substrate W is held in a non-contact manner by the spin chuck 51 according to Bernoulli's principle (Bernoulli chuck).

As the substrate processing in the processing unit 600, first, the thickness of a film made of an organic material or the like formed on the upper surface of the substrate W may be measured. For example, an optical displacement sensor (not shown) is used to measure the film thickness. In film thickness measurement, the measurement is performed while rotating the substrate W at, for example, 100 rpm, but the time required for film thickness measurement can also be shortened by rotating the substrate W at, for example, 1200 rpm. Next, a chemical solution (for example, fluoronitric acid, which is a mixture of hydrofluoric acid (HF) and nitric acid (HNO ₃ ), or a chemical solution, which is a mixture of sulfuric acid and phosphoric acid) is supplied to the upper surface of the substrate W. Then, a predetermined chemical treatment is performed (step ST01 in FIG. 8).

Thereafter, a cleaning process is performed by supplying a cleaning liquid such as pure water (DIW) to the substrate W (step ST02 in FIG. 8).

Furthermore, the cleaning liquid is shaken off by rotating the substrate W at high speed, thereby drying the substrate W (step ST03 in FIG. 8).

The chemical liquid treatment described above is performed by discharging a chemical liquid onto the upper surface of the substrate W from the central nozzle 52 or another nozzle. Further, the cleaning process is performed by discharging a cleaning liquid onto the upper surface of the substrate W from the center nozzle 52 and the edge nozzle 60. However, only one of the center nozzle 52 and the edge nozzle 60 may be used in the cleaning process.

<About cleaning process>
Next, a cleaning process among the above substrate processes will be explained. FIG. 9 is a diagram for explaining the positional relationship between the edge nozzle 60 and the substrate W.

As an example is shown in FIG. 9, the edge nozzle 60 is arranged such that the radially inner end 60A of the edge nozzle 60 overlaps the upper surface of the convex portion 12 of the substrate W in a plan view. Further, the edge nozzle 60 is arranged so that the radially outer end 60B of the edge nozzle 60 does not overlap the substrate W. Note that the position of the edge nozzle 60 in the circumferential direction of the substrate W is not particularly limited.

In the example shown in FIG. 9, the edge nozzle 60 is arranged such that the end 60A overlaps the radial center 12B, which is the radial center position of the convex portion 12 in plan view. The end portion 60A may be arranged so as to overlap the radially inner end portion 12A of the convex portion 12. However, considering the variation in the discharge range of the cleaning liquid discharged from the edge nozzle 60, while the end 60A of the edge nozzle 60 is located on the radially outer side of the substrate W than the end 12A of the convex part 12, It is desirable that the convex portion 12 be located radially inward of the substrate W rather than the radially outer end 12C of the convex portion 12.

By doing so, the discharge range of the cleaning liquid discharged from the edge nozzle 60 is limited to the upper surface of the convex part 12 of the substrate W, and the step part between the convex part 12 and the main part 13 is included in the discharge range of the cleaning liquid. (Specifically, the step portion formed by the radially inner corner of the convex portion 12, the radially inner side surface of the convex portion 12, and the radially outer end of the main portion 13) is not included. can do. Therefore, it is possible to suppress splashing of the cleaning liquid discharged onto the substrate W at the step portion. As a result, it is possible to suppress the inside of the processing chamber 50 from being contaminated by the spray of the cleaning liquid caused by the above-mentioned liquid splashing.

FIG. 10 is a diagram showing an example of the cleaning liquid discharged from the edge nozzle 60. In FIG. 10, the cleaning liquid 70 is discharged toward the convex portion 12 of the substrate W from the edge nozzle 60 arranged as shown in FIG.

The cleaning liquid 70 is discharged from the edge nozzle 60 onto the convex portion 12 of the substrate W, with the discharge range being limited to the radially outer side of the substrate W than the end portion 12A. Therefore, it is possible to suppress splashing of the cleaning liquid discharged onto the substrate W at the step portion.

Furthermore, since the cleaning liquid 70 is also discharged to the outside of the substrate W that does not overlap with the substrate W, it absorbs the liquid splashing component to the outside in the radial direction of the substrate W and effectively circulates to the lower surface of the substrate W. It can be washed by washing. Here, as shown in FIG. 10, if the adhesive 80 that bonds the substrate W and the protective plate 15 is eroded by chemical treatment, the cleaning liquid 70 that has flowed around to the bottom surface of the substrate W may cause the adhesive Even foreign substances attached to the agent 80 can be cleaned.

In the example shown in FIGS. 9 and 10, the cleaning liquid 70 is discharged from the edge nozzle 60 in the negative Z-axis direction, but the cleaning liquid 70 may be discharged obliquely with respect to the Z-axis direction, for example. Good too. In that case, the edge nozzle 60 does not necessarily need to be located above the convex portion 12 of the substrate W (in the positive Z-axis direction).

In addition, the example in FIG. 10 shows a case where the cleaning liquid 71 is also discharged from the central nozzle 52 (FIG. 3), and the cleaning liquid 71 reaches the convex portion 12 (due to centrifugal force caused by the rotating substrate W, etc.). ing. In this way, the cleaning liquid 71 flowing from the center of the substrate W toward the outside in the radial direction of the substrate W reaches the convex portion 12, which prevents liquid that may occur at the stepped portion between the convex portion 12 and the main portion 13. By absorbing the splashes with the flow of the cleaning liquid 71, it is possible to effectively suppress the spraying of the cleaning liquid caused by the splashes.

The order of the cleaning process is, for example, by first discharging the cleaning liquid 71 from the central nozzle 52 at a rate of, for example, 1500 ml/min onto the center of the upper surface of the substrate W which is being rotated by the spin chuck 51 at, for example, 200 rpm. The entire upper surface of the substrate W is cleaned while flowing the cleaning liquid 71 radially outward. Next, the cleaning liquid 70 is discharged from the edge nozzle 60 onto the convex portion 12 of the substrate W at a rate of, for example, 500 ml/min, thereby intensively cleaning foreign matter adhering to the convex portion 12 of the substrate W. At this time, by discharging the cleaning liquid 71 from the central nozzle 52 at a rate of, for example, 1500 ml/min, it is possible to suppress liquid splashing that may occur at the stepped portion between the convex portion 12 and the main portion 13 of the substrate W. Finally, by discharging the cleaning liquid 71 from the central nozzle 52 again, the entire substrate W including the foreign matter remaining on the protrusions 12 after cleaning the protrusions 12 can be cleaned.

FIG. 11 is a diagram for explaining the positional relationship between the edge nozzle 60 and the substrate W.

As an example is shown in FIG. 11, the edge nozzle 60 is arranged such that the end 60A of the edge nozzle 60 overlaps the upper surface of the convex portion 12 of the substrate W in a plan view. Further, the edge nozzle 60 is arranged so that the radially outer end 60B of the edge nozzle 60 does not overlap the substrate W.

In the example shown in FIG. 11, the radially outer end 60B of the edge nozzle 60 is configured such that the position adjustment pin 113 and lift pin 116 disposed on the radially outer side of the substrate W are included in the cleaning liquid discharge range. , are arranged radially outward from the position adjustment pin 113 and the lift pin 116. Here, the position adjustment pin 113 and the lift pin 116 are edge pins that contact the edge 20 of the substrate W.

By doing so, the discharge range of the cleaning liquid discharged from the edge nozzle 60 is limited to the upper surface of the convex part 12 of the substrate W, and the step part between the convex part 12 and the main part 13 is included in the discharge range of the cleaning liquid. can be prevented from being included. Therefore, it is possible to suppress splashing of the cleaning liquid discharged onto the substrate W at the step portion.

Further, the position adjustment pins 113 and the lift pins 116, which are disposed on the radially outer side of the substrate W, can be cleaned together by the cleaning liquid discharged from the edge nozzle 60.

FIG. 12 is a diagram showing an example of the cleaning liquid discharged from the edge nozzle 60. In FIG. 12, the cleaning liquid 70 is discharged toward the convex portion 12 of the substrate W from the edge nozzle 60 arranged as shown in FIG.

The cleaning liquid 70 is discharged from the edge nozzle 60 onto the convex portion 12 of the substrate W, with the discharge range being limited to the radially outer side of the substrate W than the end portion 12A. In addition, since the cleaning liquid 70 is also discharged to an area including the position adjustment pins 113 and lift pins 116 on the outside of the substrate W that do not overlap with the substrate W, the cleaning liquid 70 absorbs components splashing on the outside of the substrate W in the radial direction. , the lower surface of the substrate W, the position adjustment pins 113, and the lift pins 116 can be cleaned together. Note that, as shown in FIG. 12, the fixing pins 103 that support the substrate W can also be cleaned together.

In the example of FIG. 12, the cleaning liquid 71 is also discharged from the central nozzle 52 (FIG. 3), and the cleaning liquid 71 reaches the convex portion 12. As described above, since the cleaning liquid 71 flowing from the center of the substrate W toward the outside in the radial direction of the substrate W reaches the convex portion 12, the cleaning liquid 71 that flows from the center of the substrate W to the outside in the radial direction of the substrate W reaches the convex portion 12. By absorbing the splash at a flow rate outward in the radial direction, it is possible to effectively suppress spraying of the cleaning liquid caused by the splash.

<About the effects produced by the embodiments described above>
Next, examples of effects produced by the embodiment described above will be shown. In addition, in the following description, the effects will be described based on the specific configurations shown in the embodiments described above, but examples will not be included in the present specification to the extent that similar effects are produced. may be replaced with other specific configurations shown. That is, for convenience, only one of the concrete configurations that are associated may be described below as a representative, but other specific configurations that are described as a representative may also be described. It may be replaced with a similar configuration.

According to the embodiment described above, the substrate cleaning device includes a holding section and a cleaning nozzle. Here, the holding portion corresponds to, for example, the spin chuck 10 having the plate 101. Further, the cleaning nozzle corresponds to, for example, the edge nozzle 60. A convex portion 12 is formed on at least a portion of the edge of the upper surface of the substrate W. Plate 101 holds substrate W. The edge nozzle 60 discharges the cleaning liquid 70 toward the convex portion 12 of the substrate W. Here, the first cleaning liquid corresponds to, for example, the cleaning liquid 70. The cleaning liquid 70 is applied to the outside of the substrate W such that the radially inner end 60A of the substrate W is located on the upper surface of the convex portion 12, and the radially outer end 60B of the substrate W does not overlap with the substrate W in plan view. Discharged to the area where it is located.

According to such a configuration, the discharge range of the cleaning liquid 70 discharged from the edge nozzle 60 is limited to the upper surface of the convex part 12 of the substrate W, and the discharge range of the cleaning liquid 70 includes the convex part 12 and the main part 13. It is possible to avoid including the stepped portion between the two. Therefore, it is possible to suppress splashing of the cleaning liquid discharged onto the substrate W at the step portion. As a result, it is possible to suppress the inside of the processing chamber 50 from being contaminated by the spray of the cleaning liquid caused by the above-mentioned liquid splashing. In addition, since the discharge range of the cleaning liquid 70 extends to the outside of the substrate W that does not overlap with the substrate W, the cleaning liquid 70 can be effectively sprayed onto the lower surface of the substrate W while also absorbing liquid components splashing outward in the radial direction of the substrate W. It can be washed by going around.

In addition, in the case where other configurations illustrated in the present specification are appropriately added to the above configuration, that is, when other configurations in the present specification that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, the substrate cleaning apparatus includes the central nozzle 52 that discharges the second cleaning liquid to the center of the substrate W held on the plate 101 in a plan view. Here, the second cleaning liquid corresponds to, for example, the cleaning liquid 71. The cleaning liquid 71 discharged to the center of the substrate W reaches the convex portion 12 at the edge of the substrate W. According to such a configuration, the cleaning liquid 71 flowing from the central portion of the substrate W toward the outside in the radial direction of the substrate W reaches the convex portion 12, so that the stepped portion between the convex portion 12 and the main portion 13 is removed. It is possible to absorb liquid splashes that may occur due to the radially outward flow rate, thereby effectively suppressing spraying of the cleaning liquid caused by the liquid splashes.

Further, according to the embodiment described above, the substrate cleaning apparatus includes a rotating section for rotating the plate 101. Here, the rotating section corresponds to, for example, the rotation driving section 193. The cleaning liquid 71 discharged onto the substrate W flows from the center of the rotating substrate W and reaches the convex portion 12 . According to such a configuration, the cleaning liquid 71 discharged from the central nozzle 52 smoothly reaches the convex portion 12 of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Further, it is also possible to suppress the cleaning liquid 70 discharged from the edge nozzle 60 from flowing into the radial direction of the substrate W due to the above-mentioned centrifugal force.

Further, according to the embodiment described above, the substrate cleaning apparatus includes an edge pin that contacts the edge 20 of the substrate W. Here, the edge pin corresponds to at least one of the position adjustment pin 113, the lift pin 116, etc., for example. The cleaning liquid 70 is then discharged to a range including the edge pins. According to such a configuration, the position adjustment pins 113 and the lift pins 116, which are arranged on the radially outer side of the substrate W, can be cleaned together with the cleaning liquid discharged from the edge nozzle 60.

Further, according to the embodiment described above, the plate 101 holds the substrate W with a Bernoulli chuck. According to such a configuration, since nitrogen gas or the like is flowing on the lower surface side of the substrate W, cleaning liquid may be prevented from flowing around to the lower surface of the substrate W. By intensively discharging the cleaning liquid 70 toward the substrate 12, the convex portion 12 of the substrate W and the lower surface of the substrate W can be effectively cleaned.

Further, according to the embodiment described above, the substrate cleaning apparatus includes a hydrophilic glass plate bonded to the lower surface of the substrate W with an adhesive. Here, the glass plate corresponds to, for example, the protection plate 15. According to such a configuration, since the protective plate 15 adhered to the lower surface of the substrate W is hydrophilic, the cleaning liquid such as pure water easily flows around to the lower surface side of the substrate W. Therefore, cleaning of the lower surface of the substrate W can be facilitated.

According to the embodiment described above, the substrate cleaning method includes the step of holding the substrate W and the step of discharging the cleaning liquid 70 toward the convex portion 12 of the substrate W. The cleaning liquid 70 is applied to the outside of the substrate W such that the radially inner end of the substrate W is located on the upper surface of the convex portion 12 and the radially outer end of the substrate W does not overlap with the substrate W in plan view. Discharged to the area where it is located.

According to such a configuration, the discharge range of the cleaning liquid 70 discharged from the edge nozzle 60 is limited to the upper surface of the convex part 12 of the substrate W, and the discharge range of the cleaning liquid 70 includes the convex part 12 and the main part 13. It is possible to avoid including the stepped portion between the two. Therefore, it is possible to suppress splashing of the cleaning liquid discharged onto the substrate W at the step portion. As a result, it is possible to suppress the inside of the processing chamber 50 from being contaminated by the spray of the cleaning liquid caused by the above-mentioned liquid splashing. In addition, since the discharge range of the cleaning liquid 70 extends to the outside of the substrate W that does not overlap with the substrate W, the cleaning liquid 70 can be effectively sprayed onto the lower surface of the substrate W while also absorbing liquid components splashing outward in the radial direction of the substrate W. It can be washed by going around.

Note that if there are no particular restrictions, the order in which each process is performed can be changed.

In addition, if other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, if other configurations in the specification of the present application that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

<About modifications of the embodiment described above>
In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are only one example in all aspects. However, it is not limited.

Accordingly, countless variations and equivalents, not illustrated, are envisioned within the scope of the technology disclosed herein. For example, this includes cases in which at least one component is modified, added, or omitted.

In at least one of the embodiments described above, if a material name is listed without being specified, unless a contradiction arises, the material may contain other additives, such as This includes alloys, etc.

12 Convex portion 12A End 12C End 16 Bottom surface 17 Top surface 20 Edge 52 Center nozzle 60A End 60B End 70 Cleaning liquid 71 Cleaning liquid 80 Adhesive 102 Top surface W Substrate

Claims (7)

It is a substrate cleaning device that cleans the substrate,
A convex portion is formed on at least a portion of the edge of the upper surface of the substrate,
The substrate cleaning device includes:
a holding part for holding the substrate;
a cleaning nozzle for discharging a first cleaning liquid toward the convex portion of the substrate,
The first cleaning liquid is applied to the outer side of the substrate such that the radially inner end of the substrate is located on the upper surface of the convex portion, and the radially outer end of the substrate does not overlap with the substrate in plan view. Discharged to the area located in
Substrate cleaning equipment. The substrate cleaning device according to claim 1,
further comprising a central nozzle that discharges a second cleaning liquid to a central portion of the substrate held by the holding unit in plan view;
the second cleaning liquid discharged to the central portion of the substrate reaches the convex portion at the edge of the substrate;
Substrate cleaning equipment. The substrate cleaning device according to claim 2,
further comprising a rotating part for rotating the holding part,
the second cleaning liquid discharged onto the substrate flows from the central portion of the rotating substrate and reaches the convex portion;
Substrate cleaning equipment. A substrate cleaning apparatus according to any one of claims 1 to 3,
further comprising an edge pin contacting an edge of the substrate,
the first cleaning liquid is discharged into a range including the edge pin;
Substrate cleaning equipment. A substrate cleaning apparatus according to any one of claims 1 to 3,
the holding unit holds the substrate with a Bernoulli chuck;
Substrate cleaning equipment. A substrate cleaning apparatus according to any one of claims 1 to 3,
further comprising a hydrophilic glass plate adhered to the lower surface of the substrate with an adhesive;
Substrate cleaning equipment. A substrate cleaning method for cleaning a substrate,
A convex portion is formed on at least a portion of the edge of the upper surface of the substrate,
holding the substrate;
a step of discharging a first cleaning liquid toward the convex portion of the substrate,
The first cleaning liquid is applied to the outer side of the substrate such that the radially inner end of the substrate is located on the upper surface of the convex portion, and the radially outer end of the substrate does not overlap with the substrate in plan view. Discharged to the area located in
Substrate cleaning method.

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