JP2009070946A - Substrate treating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treating apparatus capable of uniformly pressing a substrate against a support member when predetermined surface treatment is carried out for the substrate by discharging a treating liquid from a plurality of discharging openings. <P>SOLUTION: Two nozzles 3A, 3B are mounted on a single nozzle arm 31. This nozzle arm 31 is moved and the nozzles 3A, 3B are simultaneously inserted into nozzle insertion holes 52A, 52B respectively. Only a single discharging opening 301a is opened in each of the nozzles 3A, 3B, and the opening 521 of the nozzle insertion holes 52A, 52B can be made small. Thereby, the disturbance of the air flow occurring in the gap space SP is reduced. Moreover, respective nozzles 3A, 3B are formed in the same shape and respective nozzle insertion holes 52A, 52B are formed in the same shape, so that the influence on the air flow occurring in the gap space SP exerted by them can be made uniform. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, and a magneto-optical disk. The present invention relates to a substrate processing apparatus that performs a predetermined surface treatment by supplying a processing liquid to the surface of a substrate while rotating the substrate such as a working substrate.

  In a manufacturing process in which a series of processes are performed on a substrate such as a semiconductor wafer, a film forming process is performed to form various thin films on the surface of the substrate. In this film forming process, a film may be formed on the back surface of the substrate or the peripheral portion of the substrate surface. However, in general, only the circuit formation region at the center of the substrate surface needs to be formed on the substrate. If the film is formed on the back surface of the substrate or the peripheral portion of the substrate surface, the following problems occur. Sometimes. That is, in a subsequent process of the film forming process, the thin film formed on the peripheral portion of the substrate surface may be peeled off by contact with another apparatus. The peeled thin film may adhere to the circuit formation region at the center of the substrate surface or the substrate processing apparatus, which may cause a decrease in the yield of manufactured products and troubles in the substrate processing apparatus itself.

  Therefore, in order to remove the thin film formed on the back surface of the substrate and the peripheral edge of the front surface of the substrate, for example, an apparatus described in Patent Document 1 has been proposed. In this apparatus, a substrate having a thin film formed on the surface thereof is provided horizontally so that the substrate surface faces upward, with respect to a support member that protrudes upward from the spin base and supports the substrate while contacting the peripheral edge of the back surface of the substrate. Retained. Then, a gas is supplied from an atmosphere blocking plate (corresponding to the “opposing member” of the present invention) disposed above the substrate to a gap space formed between the atmosphere blocking plate and the substrate surface. Accordingly, the substrate is rotated in a state where the substrate is pressed against the support member and the substrate is held on the spin base.

  Further, the atmosphere blocking plate inserts a nozzle into a nozzle insertion hole having an opening on the substrate facing surface facing the substrate surface, and supplies the processing liquid from the nozzle toward the peripheral edge of the surface of the rotating substrate. Specifically, a chemical solution discharge port for discharging a chemical solution and a rinse solution discharge port for discharging a rinse solution are opened at the tip of the nozzle, and the chemical solution is discharged from the chemical solution discharge port toward the peripheral edge of the surface of the substrate. As a result, unnecessary substances (thin films) adhering to the peripheral edge of the surface of the substrate are removed by etching. Subsequently, the rinsing liquid is discharged from the rinsing liquid discharge port toward the peripheral edge of the surface of the substrate, whereby the chemical liquid remaining on the peripheral edge of the surface of the substrate is washed away. Further, a chemical solution and a rinse solution are sequentially supplied to the back surface of the rotating substrate. As a result, unnecessary materials are removed from the back surface of the substrate. In this way, the thin film is removed by etching only at the periphery of the substrate back surface and substrate surface.

Japanese Patent Laying-Open No. 2006-41444 (FIG. 1)

  By the way, in the method of pressing the substrate against the support member and holding the substrate on the spin base by supplying gas to the gap space as in the above apparatus, the substrate facing surface from the viewpoint of uniformly pressing the substrate against the support member It is desirable to make the opening of the nozzle insertion hole formed as small as possible. This is because if a gas is supplied to the gap space while rotating the substrate, an air flow is generated in the gap space. Here, if the opening portion of the nozzle insertion hole is formed on the substrate facing surface, the air flow generated in the gap space is disturbed in the portion where the opening portion is formed, and the pressing force to the support member of the substrate may fluctuate. Because there is.

  However, in the above-described conventional apparatus, two discharge ports, a chemical solution discharge port and a rinse liquid discharge port, are opened with respect to one nozzle. When a plurality of discharge ports are opened for one nozzle in this way, the shape of the nozzle tip is increased, resulting in an increase in the opening of the nozzle insertion hole formed corresponding to the nozzle tip. . As a result, it has been against the request to press the substrate uniformly against the support member.

  The present invention has been made in view of the above problems, and a substrate capable of uniformly pressing a substrate against a support member when a predetermined surface treatment is performed on the substrate by discharging treatment liquid from a plurality of discharge ports. An object is to provide a processing apparatus.

  The present invention is a substrate processing apparatus that performs a predetermined process by supplying a processing liquid to the surface of a substrate while rotating the substrate, a rotating member that is rotatably provided, a rotating unit that rotates the rotating member, A single discharge port for discharging the processing liquid toward the substrate surface is opened in each, a plurality of nozzles formed in the same shape, a single holding means for holding the plurality of nozzles, and rotation Three or more support members projecting upward from the member and abutting against the back surface of the substrate to support the substrate apart from the rotating member, and spaced apart from the surface of the substrate supported by the support member And a gap member formed between a counter member provided with a plurality of nozzle insertion holes corresponding to a plurality of nozzles and having a plurality of nozzle insertion holes having openings on the substrate counter surface facing the substrate surface. Supply gas to the substrate By pressing the supporting member and holding it on the rotating member, and moving the holding means to simultaneously insert a plurality of nozzles into each of the plurality of nozzle insertion holes, it is possible to discharge the processing liquid from the plurality of nozzles. And a moving means.

  In the invention configured as described above, the substrate is supported by three or more supporting members that are in contact with the back surface thereof, and is pressed against the supporting member by the gas supplied to the gap space and is held by the rotating member. When the rotating member is rotated, the substrate pressed by the supporting member rotates together with the rotating member while being supported by the supporting member by the frictional force generated between the supporting member and the substrate. In this state, a plurality of nozzles are simultaneously inserted into each of the plurality of nozzle insertion holes formed in the facing member, and the processing liquid can be discharged from the plurality of nozzles. Here, each nozzle has only a single discharge opening, and the shape of the tip of each nozzle can be made compact. Therefore, the opening part of the nozzle insertion hole formed in the board | substrate opposing surface corresponding to a some nozzle can be made small. For this reason, it can reduce that the air current by the gas supplied to the gap space is disturbed. In addition, since each nozzle is formed in the same shape and each nozzle insertion hole is formed in the same shape, the positional relationship between each nozzle and each nozzle insertion hole can be made constant. For this reason, the influence which the nozzle inserted in the nozzle insertion hole and the nozzle insertion hole has on the airflow generated in the gap space can be made uniform. Therefore, the substrate can be uniformly pressed against the support member.

  In addition, a plurality of nozzles are held by a single holding means, and the holding means is moved so that a plurality of nozzles are simultaneously inserted into each of the plurality of nozzle insertion holes, so that the nozzle position of each nozzle relative to the substrate is adjusted. Can be executed in a relatively short time. That is, in order to supply the processing liquid from each nozzle to a predetermined region on the substrate surface, it is necessary to appropriately adjust the relative position of the nozzle with respect to the substrate. Here, considering that each of a plurality of nozzles each having a single discharge port is simply positioned with respect to the substrate (inserted into the nozzle insertion hole), the nozzles can be driven by mutually independent drive units. it can. However, when the configuration in which each nozzle is driven independently as described above is employed, it is necessary to adjust the nozzle position with respect to the substrate W for each nozzle, and there is a problem that much time is required for the adjustment. . On the other hand, according to the present invention, since the relative positional relationship between the plurality of nozzles is fixed, it is sufficient to consider the plurality of nozzles as one object and adjust them integrally. That is, if the nozzle position is adjusted with respect to one of the plurality of nozzles 3, the nozzle positions of the other nozzles are automatically adjusted. Therefore, the adjustment time of the nozzle position can be greatly shortened. In addition, since the plurality of nozzles are driven by a single drive mechanism (moving means), the drive configuration can be simplified as compared with the case where each of the plurality of nozzles is driven independently.

  Here, a plurality of nozzle insertion holes are formed at the peripheral edge of the opposing member, and the processing liquid is supplied to the peripheral edge of the surface of the substrate with each of the plurality of nozzles held by the holding means being inserted into the nozzle insertion holes. You may comprise. According to this configuration, the relative positional relationship between the supply positions of the processing liquid supplied from the nozzles to the peripheral edge of the surface of the substrate is kept constant. For this reason, it is possible to prevent the width (hereinafter referred to as “peripheral processing width”) that is processed inward from the peripheral end surface of the substrate for each nozzle from fluctuating among a plurality of nozzles. That is, the relationship between the peripheral processing width by one nozzle of the plurality of nozzles and the peripheral processing width by another nozzle of the plurality of nozzles can be made constant.

  Further, in a substrate processing apparatus that removes unnecessary substances existing on the peripheral edge of the substrate from the peripheral surface by etching with a chemical solution, a plurality of nozzles are held by holding means adjacent to each other. On the other hand, a chemical solution supply means for supplying the same type of chemical solution as a processing solution is communicated with a plurality of nozzles, and each of the plurality of nozzles is configured to simultaneously discharge the chemical solution from the chemical solution supply means toward the surface peripheral edge of the substrate. May be. According to this structure, a chemical | medical solution is locally supplied to the surface peripheral part of a board | substrate simultaneously from several nozzles. For this reason, it is hardly soluble in chemicals such as an insulating film (High-k film) having a relative dielectric constant higher than that of an unnecessary object to be removed by etching, for example, a silicon nitride film (SiN film) or a silicon oxide film. Even when the thin film shown is formed (when the etching rate is low), since chemicals are locally supplied to the thin film from a plurality of nozzles, unnecessary substances are efficiently removed from the peripheral edge of the surface of the substrate. Etching can be removed.

  In addition, at least one of the plurality of nozzles communicates with a rinsing liquid supply unit that supplies a rinsing liquid as a processing liquid to the nozzle. You may comprise so that the rinse liquid from a supply means may be discharged toward the surface peripheral part of a board | substrate. According to this configuration, the rinsing liquid is supplied from at least one of the plurality of nozzles after the chemical liquid is supplied. For this reason, even if the center of the opposing member and the center of the substrate are decentered (displacement), the chemical liquid supply position and the rinse liquid supply position with respect to the substrate can be made the same, and the influence of the positional deviation Need not be considered between nozzles. More specifically, when the nozzle for supplying the chemical liquid (hereinafter referred to as “chemical nozzle”) and the nozzle for supplying the rinse liquid (hereinafter referred to as “rinse nozzle”) are driven independently of each other, If the center of the substrate and the center of the substrate are eccentric, the chemical nozzle may be located radially inside the substrate with respect to the rinse nozzle. As a result, the chemical liquid is supplied radially inward of the substrate from the rinse liquid supply position, and the rinse liquid supply range becomes narrower than the chemical liquid supply range. As a result, an area that cannot be treated with the rinsing liquid occurs among the areas treated with the chemical liquid, which may cause poor rinsing. On the other hand, according to this configuration, the chemical solution supply position and the rinse liquid supply position with respect to the substrate become the same regardless of the occurrence of the positional deviation between the opposing member and the substrate, and thus such a rinse failure occurs. Can be prevented.

  Further, in the substrate processing apparatus that removes unnecessary substances present on the peripheral edge of the substrate from the peripheral edge by etching with a chemical solution, the holding means holds two nozzles adjacent to each other, and the two of the two nozzles One of these is a chemical nozzle that supplies chemical liquid to the peripheral edge of the surface of the substrate, and the other is a rinse nozzle that supplies rinsing liquid to the peripheral edge of the surface of the substrate, and the rinse nozzle is a liquid nozzle from the chemical nozzle in the rotation direction of the substrate. The rinse liquid may be supplied to a position immediately after the chemical liquid is supplied downstream from the supply position. According to this configuration, the rinse liquid is supplied to a position immediately after the chemical liquid is supplied on the downstream side with respect to the supply position of the chemical liquid. For this reason, a thin film that can be etched and removed relatively easily by a chemical such as a tetraethoxyorthosilane (TEOS) film is formed as an unnecessary object to be removed by etching (etching rate becomes excessively high). Even in this case, it is possible to suppress the progress of etching toward the inside in the radial direction by the chemical solution supplied to the peripheral edge portion of the surface. As a result, the peripheral processing width can be accurately controlled. In addition, by supplying the rinse liquid immediately after the chemical liquid is supplied, it is possible to prevent the chemical liquid from bouncing back to the center of the surface (non-treatment region) of the substrate.

  Further, since the holding means has a single holding plate for mounting the plurality of nozzles, it becomes easy to hold the plurality of nozzles and move them integrally.

  According to the present invention, each of the plurality of nozzles has only a single discharge opening, and the shape of the tip of each nozzle can be made compact, and the opening of the nozzle insertion hole can be made small. can do. For this reason, it is possible to reduce the disturbance of the airflow generated in the gap space. In addition, since the nozzles are formed in the same shape and the nozzle insertion holes are formed in the same shape, the positional relationship between the nozzles and the nozzle insertion holes can be made constant. For this reason, the influence which it has on the airflow generated in the gap space can be made uniform. Therefore, the substrate can be uniformly pressed against the support member. In addition, the plurality of nozzles are held by a single holding means, and the holding means is moved so that the plurality of nozzles are simultaneously inserted into each of the plurality of nozzle insertion holes. It can be executed in a short time. In addition, since the plurality of nozzles are driven by a single driving means (moving means), the driving configuration can be simplified as compared with the case where each of the plurality of nozzles is driven independently.

<First Embodiment>
FIG. 1 is a diagram showing a first embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a main control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus is an apparatus for cleaning the peripheral portion of the surface Wf of a substantially circular substrate W such as a semiconductor wafer, specifically, a thin film (unnecessary material) present on the peripheral portion of the surface Wf of the substrate W or the peripheral portion and This is an apparatus for etching away a thin film existing on the substrate back surface Wb. That is, the substrate W to be processed includes a substrate in which a thin film is formed on the substrate surface Wf and a substrate in which the thin film is formed on the front and back surfaces Wf and Wb. Therefore, when a thin film is formed only on the substrate surface Wf, a chemical solution such as hydrofluoric acid and hydrochloric acid and DIW (deionized water :) are applied to the peripheral portion TR (corresponding to the “surface peripheral portion” of the present invention) of the substrate surface Wf. A rinse solution such as deionized water (hereinafter, chemical solution and rinse solution are collectively referred to as “treatment solution”) is supplied to remove the thin film from the surface peripheral portion TR by etching, and supply the treatment solution to the substrate back surface Wb. To clean the back surface Wb. When thin films are formed on the front and back surfaces Wf and Wb of the substrate W, the processing liquid is supplied to the front surface peripheral portion TR and the back surface Wb, and the thin film is etched away from the front surface peripheral portion TR and the back surface Wb. In this embodiment, the substrate surface Wf means a device forming surface on which a device pattern is formed.

  The substrate processing apparatus includes a spin chuck 1 that rotates while holding the substrate W in a substantially horizontal position with the substrate surface Wf facing upward, and the center of the lower surface (back surface Wb) of the substrate W held by the spin chuck 1. A plurality of (two in this embodiment) lower processing nozzles 2 for supplying the processing liquid toward the surface and a processing liquid for supplying the processing liquid from the substrate surface Wf side to the surface peripheral portion TR of the substrate W held by the spin chuck 1 Nozzles 3 </ b> A and 3 </ b> B and a facing member 5 disposed to face the surface Wf of the substrate W held by the spin chuck 1 are provided.

  In the spin chuck 1, a hollow rotation support shaft 11 is connected to a rotation shaft of a chuck rotation mechanism 13 including a motor, and the rotation support shaft 11 can be rotated around a rotation center A 0 by driving the chuck rotation mechanism 13. ing. A spin base 15 is integrally connected to the upper end portion of the rotating spindle 11 by a fastening part such as a screw. Therefore, the spin base 15 rotates around the rotation center A0 by driving the chuck rotation mechanism 13 in accordance with an operation command from the control unit 8 that controls the entire apparatus. Thus, in this embodiment, the chuck rotating mechanism 13 functions as the “rotating device” of the present invention, and the spin base 15 functions as the “rotating member” of the present invention.

  Further, a processing liquid supply pipe 21 is inserted through the hollow rotating support shaft 11, and the lower surface processing nozzle 2 is coupled to the upper end thereof. The processing liquid supply pipe 21 is connected to the chemical liquid supply unit 16 and the DIW supply unit 17, and DIW is selectively supplied as the chemical liquid or the rinse liquid. Further, a gap between the inner wall surface of the rotation spindle 11 and the outer wall surface of the processing liquid supply pipe 21 forms an annular gas supply path 23. The gas supply path 23 is connected to the gas supply unit 18 and can supply nitrogen gas into a space sandwiched between the substrate back surface Wb and the top surface of the spin base 15 facing the substrate back surface Wb. In this embodiment, nitrogen gas is supplied from the gas supply unit 18, but air or other inert gas may be discharged.

  FIG. 3 is a plan view of the spin base as viewed from above. An opening is provided at the center of the spin base 15. Further, a plurality (six in this embodiment) of first support pins F1 to F6 and a plurality (six in this embodiment) of second support pins S1 to S6 are provided near the periphery of the spin base 15. Is provided as a “support member” of the present invention so as to be movable up and down. The first support pins F1 to F6 project radially upward from the spin base 15 at substantially equal angular intervals about the rotation center A0, and the second support pins S1 to S6 extend along the circumferential direction. Projecting upward from the spin base 15 at substantially equal angular intervals radially about the rotation center A0 so as to be positioned between the first support pins F1 to F6. That is, a pair of support pins including the first and second support pins are provided in a radial direction around the rotation center A0 and six pairs in a radial direction, and upward on the peripheral edge of the spin base 15.

  Each of the first support pins F1 to F6 and the second support pins S1 to S6 can support the substrate W in a substantially horizontal posture while being spaced apart from the spin base 15 by a predetermined distance by contacting the back surface Wb of the substrate. It has become. Among these, six first support pins F1 to F6 arranged alternately every other along the circumferential direction constitute a first support pin group, and these support the substrate W in conjunction with each other or the back surface of the substrate. It operates so as to release the support away from Wb. On the other hand, the remaining six second support pins S1 to S6 constitute a second support pin group that supports the substrate W in conjunction with each other or releases the support away from the substrate back surface Wb. Operate. In order to horizontally support the substrate W, each support pin group may have at least three support pins, but each support pin group should have six support pins. Thus, the substrate W can be stably supported.

  FIG. 4 is a partially enlarged view showing the structure of the support pin. Since each of the first and second support pins F1 to F6 and S1 to S6 has the same configuration, only the configuration of one support pin F1 will be described here with reference to the drawings. The support pin F1 includes an abutting portion 61 that can be separated from and abutted on the lower surface of the substrate W, a movable rod 62 that supports the abutting portion 61 so as to be movable up and down, and a lift drive unit that includes a motor that moves the movable rod 62 up and down. 63 and a bellows 64 provided so as to surround the movable rod 62 and blocking the movable rod 62 and the lifting drive unit 63 from the external atmosphere. The bellows 64 is formed of, for example, PTFE (polytetrafluoroethylene), and protects the movable rod 62 formed of stainless steel (SUS), aluminum, or the like when the substrate W is processed with a chemical solution such as hydrofluoric acid. The contact portion 61 is preferably formed of PCTFE (polychlorotrifluoroethylene) in consideration of chemical resistance. The upper end portion of the bellows 64 is fixed to the lower surface side of the contact portion 61, while the lower end portion of the bellows 64 is fixed to the upper surface side of the spin base 15.

  In the support pins F1 to F6 and S1 to S6 having the above-described configuration, the elevating drive unit 63 moves the movable rod 62 with a stroke of 1 to several mm via a drive connecting unit (not shown) based on a drive signal from the control unit 8. By driving, the substrate W is supported as follows. That is, in a state where the elevating drive unit 63 is not driven, each of the support pins F1 to F6 and S1 to S6 is urged by a coil spring or the like so as to support the substrate W at a predetermined height position (substrate processing position). The substrate W is urged upward by a support pin group including both a first support pin group including support pins F1 to F6 and a second support pin group including support pins S1 to S6. Supported. On the other hand, when the support pins S1 to S6 are driven downward against the urging force, the contact portions 61 of the support pins S1 to S6 are separated from the substrate back surface Wb, and the substrate W is the first composed of the support pins F1 to F6. It is supported only by the support pin group. When the support pins F1 to F6 are driven downward against the urging force, the contact portions 61 of the support pins F1 to F6 are separated from the substrate back surface Wb, and the substrate W is the second support composed of the support pins S1 to S6. Supported only by pins.

  Returning to FIG. 1, the description will be continued. Above the spin chuck 1, a disk-shaped facing member 5 that faces the substrate W held by the spin chuck 1 is horizontally disposed. The facing member 5 is attached to a lower end portion of a rotation support shaft 51 arranged coaxially with the rotation support shaft 11 of the spin chuck 1 so as to be integrally rotatable. A counter member rotating mechanism 54 is connected to the rotation spindle 51, and the counter member 5 is rotated about the rotation center A0 by driving the motor of the counter member rotating mechanism 54 in accordance with an operation command from the control unit 8. Let Further, the control unit 8 can drive the counter member 5 to rotate at the same rotational direction and the same rotational speed as the spin chuck 1 by controlling the counter member rotating mechanism 54 so as to be synchronized with the chuck rotating mechanism 13.

  Further, the facing member 5 is connected to the facing member lifting mechanism 55 and operates the lifting drive actuator (for example, an air cylinder) of the facing member lifting mechanism 55 so that the facing member 5 is opposed to the spin base 15 in the vicinity. Or can be separated. For example, when the substrate W is carried into and out of the substrate processing apparatus, the control unit 8 raises the opposing member 5 to a separated position sufficiently away from the spin chuck 1. On the other hand, when the cleaning process is performed on the substrate W, the control unit 8 lowers the facing member 5 to a facing position set very close to the surface Wf of the substrate W held by the spin chuck 1. Thereby, the lower surface 501 (corresponding to the “substrate facing surface” of the present invention) of the facing member 5 and the substrate surface Wf are disposed to face each other.

  A gas supply path 57 is formed in the hollow portion of the rotation support shaft 51. The gas supply path 57 is connected to the gas supply unit 18 so that nitrogen gas can be supplied to the gap space SP sandwiched between the substrate surface Wf and the lower surface 501 of the facing member 5. Thus, in this embodiment, the gas supply unit 18 functions as the “pressing means” of the present invention.

  FIG. 5 is a view of the lower surface of the opposing member. The lower surface 501 of the facing member 5 has a planar size equal to or larger than the diameter of the substrate W. For this reason, when the facing member 5 is disposed in the proximity position, the atmosphere on the substrate surface Wf can be blocked from the external atmosphere by covering the entire substrate surface. A plurality of gas discharge ports 502 are formed on the lower surface 501 of the facing member 5. These gas discharge ports 502 are centered on the rotation center A0 at a position facing the central portion of the surface of the substrate W held by the spin chuck 1, that is, the non-process region NTR (FIG. 1) radially inward from the peripheral surface TR. Are formed at equiangular intervals along the circumference. These gas discharge ports 502 communicate with a gas circulation space 503 formed inside the opposing member 5, and when nitrogen gas is supplied to the gas circulation space 503 via the gas supply path 57, a plurality of gas discharge ports 502 are provided. Nitrogen gas is supplied to the gap space SP through the outlet 502.

  Then, when nitrogen gas is supplied to the gap space SP from the plurality of gas discharge ports 502 in a state where the facing member 5 is positioned in the proximity position, the internal pressure of the gap space SP increases and the substrate W contacts the back surface Wb. The supporting pins F1 to F6 and S1 to S6 that are in contact with each other are pressed. When the spin base 15 rotates according to the operation command of the control unit 8 in this pressed state, the substrate W is supported on the support pins F1 to F1 by the frictional force generated between the substrate back surface Wb and the support pins F1 to F6 and S1 to S6. It rotates with the spin base 15 while being supported by F6, S1 to S6. Note that the nitrogen gas supplied to the gap space SP flows outward in the radial direction of the substrate W.

  Two nozzle insertion holes 52 </ b> A and 52 </ b> B that penetrate the opposing member 5 in the vertical direction (vertical axis direction) are formed in the peripheral portion of the opposing member 5, and two openings 521 are formed in the lower surface 501 of the opposing member 5. Has been. Then, the nozzles 3A and 3B are inserted into the nozzle insertion holes 52A and 52B, respectively, and the processing liquid is discharged from the nozzle insertion holes 52A and 52B toward the surface peripheral portion TR of the substrate W in the inserted state. it can. The nozzle insertion hole 52A and the nozzle insertion hole 52B are formed in the same shape as each other, and are formed adjacent to each other in the circumferential direction at a position where the distance from the center (rotation center A0) of the opposing member 5 is the same. Therefore, in a state where the nozzles 3A and 3B are inserted into the nozzle insertion holes 52A and 52B, respectively, the nozzles 3A and 3B are arranged along a circumferential direction on a predetermined circumference centering on the center of the opposing member 5 in a plan view. Arranged adjacent to each other.

  FIG. 6 is a partial perspective view showing the nozzle and the nozzle insertion hole. Here, since the nozzle insertion holes 52A and 52B have the same configuration, only the configuration of the nozzle insertion hole 52A will be described with reference to the drawings. Further, since the nozzles 3A and 3B are configured in the same shape except that the number of types of processing liquids that can be discharged is different, refer to FIGS. 1, 2, 5, and 6 with the nozzle 3A as a center. However, it will be explained.

  The two nozzles 3A, 3B are attached adjacent to each other at one end of a plate-like nozzle arm 31 (corresponding to the “holding plate” of the present invention) extending in the horizontal direction. More specifically, the nozzles 3A and 3B are attached to one end of the single nozzle arm 31 at positions where they can be inserted into the nozzle insertion holes 52A and 52B, respectively. The other end of the nozzle arm 31 is connected to a nozzle moving mechanism 33 (FIG. 2). Further, the nozzle moving mechanism 33 can swing the first and second nozzles 3A and 3B integrally around the predetermined rotation axis in the horizontal direction and raise and lower them. For this reason, the nozzle moving mechanism 33 is driven in accordance with an operation command from the control unit 8, whereby each of the two nozzles 3A and 3B is simultaneously inserted into the nozzle insertion holes 52A and 52B, and the chemical solution is inserted into the surface peripheral portion TR. Alternatively, it can be moved to a supply position P31 where DIW can be supplied and a standby position P32 away from the substrate W. Thus, in this embodiment, the nozzle arm 31 functions as the “holding means” of the present invention, and the nozzle moving mechanism 33 functions as the “moving means” of the present invention.

  The nozzle 3A (or 3B) has a shape that matches the shape of the nozzle insertion hole 52A (or 52B) provided in the facing member 5. That is, the nozzle outer diameter of the nozzle 3A is formed so as not to increase the opening diameter of the opening 521 of the nozzle insertion hole 52A more than necessary. In addition, since the nozzles 3A and 3B are formed in the same shape and the nozzle insertion holes 52A and 52B are formed in the same shape, the position between the nozzles 3A and 3B and the nozzle insertion holes 52A and 52B. The relationship can be made constant.

  Further, the nozzle 3A is configured such that the cross-sectional area of the nozzle body formed in a substantially cylindrical shape is different between the nozzle front end side and the rear end side. Specifically, the cross-sectional area of the body 302 on the nozzle front end side is configured to be smaller than the cross-sectional area of the body 303 on the nozzle rear end side, and the body 302 on the nozzle front end side and the nozzle rear end side on the nozzle rear end side are configured. A step surface 304 is formed between the body portion 303 and the body portion 303. That is, the outer peripheral surface (side surface) of the body 302 on the nozzle front end side and the outer peripheral surface (side surface) of the body 303 on the rear end side of the nozzle are connected via the step surface 304. The step surface 304 is formed so as to surround the body portion 302 on the nozzle tip side and substantially parallel to the substrate surface Wf held by the spin chuck 1.

  A liquid supply path 301 is formed inside the nozzles 3A and 3B. A discharge port 301 a is formed at the tip (lower end) of the liquid supply path 301. The discharge port 301a opens toward the outside in the radial direction of the substrate W. For this reason, when the processing liquid is supplied to the liquid supply path 301, the processing liquid is discharged radially outward from the discharge port 301a. Thus, only the single discharge port 301a is opened at the tip of the nozzles 3A and 3B, and the shape of the nozzle tip is configured compactly.

  The liquid supply path 301 of the nozzle 3 </ b> A communicates with the first pipe 81, and the first pipe 81 is connected to the DIW supply unit 17. A second pipe 85 branched at a branch point 83 is connected to the first pipe 81, and the second pipe 85 is connected to the chemical solution supply unit 16. The 1st piping 81 and the 2nd piping 85 are comprised by the tube made from a soft synthetic resin, for example. For this reason, the chemical solution or DIW can be selectively supplied by operating the chemical solution supply unit 16 and the DIW supply unit 17 in accordance with the operation command of the control unit 8. More specifically, when the chemical liquid is pumped from the chemical liquid supply unit 16 to the liquid supply path 301, the chemical liquid is discharged from the nozzle 3A outward in the radial direction and supplied to the surface peripheral portion TR. The chemical solution thus supplied flows toward the outside in the radial direction of the substrate W and is discharged out of the substrate. Therefore, the chemical solution is not supplied to the non-process region NTR radially inward from the supply position of the chemical solution, and the thin film is etched away with a constant width (peripheral etching width) from the peripheral end surface of the substrate W to the inside. When DIW is pumped from the DIW supply unit 17 to the liquid supply path 301, the DIW is discharged from the nozzle 3 </ b> A toward the outside in the radial direction of the substrate W. Thereby, the chemical | medical solution supplied to the surface peripheral part TR is washed away with DIW.

  On the other hand, the liquid supply path 301 of the nozzle 3 </ b> B communicates with a pipe 87, and this pipe 87 is connected to the chemical liquid supply unit 16. For this reason, by operating the chemical solution supply unit 16 in accordance with the operation command of the control unit 8, the chemical solution is pumped to the liquid supply path 301, discharged radially outward from the nozzle 3B, and supplied to the surface peripheral portion TR. The As described above, in this embodiment, the same kind of chemical solution can be locally supplied to the surface peripheral portion TR simultaneously from the nozzles 3A and 3B arranged adjacent to each other along the circumferential direction. That is, although there is a limit to the discharge flow rate with one nozzle, the chemical liquid is supplied locally at the flow rate of two nozzles to the surface peripheral portion TR by arranging the nozzles 3A and 3B adjacent to each other. It is possible. Thus, in this embodiment, the second pipe 85 and the pipe 87 connected to the chemical liquid supply unit 16 function as the “chemical liquid supply means” of the present invention, while the first pipe 81 connected to the DIW supply unit 17. Functions as the “rinsing liquid supply means” of the present invention.

  The nozzle insertion hole 52A (or 52B) is configured as follows. As shown in FIG. 6, an annular contact surface 522 that can contact the step surface 304 of the nozzle 3 </ b> A (or 3 </ b> B) is formed on the inner wall of the nozzle insertion hole 52 </ b> A. When the nozzles 3A and 3B are inserted into the nozzle insertion holes 52A and 52B, the step surface 304 and the contact surface 522 come into contact with each other in each of the nozzle insertion holes 52A and 52B, so that the nozzles 3A and 3B are in the processing position. Positioned at P31 (FIG. 1). In this positioning state, the tip surfaces of the nozzles 3A and 3B are flush with the lower surface (substrate facing surface) 501 of the facing member 5. The contact surface 522 is formed substantially in parallel with the lower surface 501 of the facing member 5, that is, substantially in parallel with the substrate surface Wf, and is in surface contact with the step surface 304. Therefore, when the nozzles 3A and 3B are positioned at the processing position P31, the nozzles 3A and 3B come into contact with the opposing member 5 and are fixed in position, so that the nozzles 3A and 3B can be positioned stably.

  A gas introduction port 505 is opened on the inner walls of the nozzle insertion holes 52A and 52B, and nitrogen gas can be supplied from the gas introduction port 505 to the internal spaces of the nozzle insertion holes 52A and 52B. The gas introduction port 505 communicates with the gas supply unit 18 through the gas circulation space 503. Therefore, when nitrogen gas is pumped from the gas supply unit 18, the nitrogen gas is supplied to the internal spaces of the nozzle insertion holes 52A and 52B. Thereby, in a state where the nozzles 3A and 3B are positioned at the standby position P32, that is, in a state where the nozzles 3A and 3B are not inserted into the nozzle insertion holes 52A and 52B, nitrogen is discharged from both the upper and lower openings of the nozzle insertion holes 52A and 52B. Gas is ejected. For this reason, even if the nozzle is not inserted into the nozzle insertion holes 52A and 52B, the treatment liquid is prevented from adhering to the inner walls of the nozzle insertion holes 52A and 52B.

  Next, the operation of the substrate processing apparatus configured as described above will be described with reference to FIGS. FIG. 7 is a flowchart showing the operation of the substrate processing apparatus of FIG. FIG. 8 is a schematic diagram showing the operation of the chemical treatment and the rinse treatment. In this apparatus, when an unprocessed substrate W is carried into the apparatus, the control unit 8 controls each part of the apparatus to perform a series of film removal processes on the substrate W (chemical treatment process + rinsing process + drying process). Is executed. Here, the substrate W on which a thin film that is hardly soluble in a chemical solution such as a silicon nitride film (SiN film) or an insulating film (High-k film) having a higher relative dielectric constant than the silicon oxide film is formed on the substrate surface Wf. In contrast, an operation of performing a surface treatment using high-concentration hydrofluoric acid (40% aqueous solution) as a chemical solution will be described. That is, the substrate surface Wf is a thin film forming surface. Therefore, in this embodiment, the substrate W is carried into the apparatus with the substrate surface Wf facing upward. Note that when the substrate is carried in, the facing member 5 is in a separated position to prevent interference with the substrate W.

  When the unprocessed substrate W is placed on the support pins F1 to F6 and S1 to S6, nitrogen gas is discharged from the gas discharge port 502 of the facing member 5 at the separated position (step S1). Next, the opposing member 5 is rotated, and the opposing member 5 is positioned with respect to the rotation direction so that the nozzle insertion holes 52A and 52B are at predetermined positions (step S2). Thereafter, the facing member 5 is lowered to the facing position and is disposed close to the substrate surface Wf (step S3). As a result, the internal pressure of the gap space SP is increased, and the substrate W is pressed by the support pins F1 to F6 and S1 to S6 that are in contact with the lower surface (back surface Wb) and held by the spin base 15. Further, the substrate surface Wf is covered with the lower surface 501 of the facing member 5 and is reliably shielded from the external atmosphere around the substrate. As described above, the substrate W may be supported by all the support pins F1 to F6 and S1 to S6, or may be supported only by the first support pin group including the support pins F1 to F6, or may be supported. You may support only by the 2nd support pin group which consists of pins S1-S6.

  Next, the substrate W is rotated with the facing member 5 stopped (step S4). At this time, the substrate W pressed by the support pins F1 to F6 and S1 to S6 is held by the spin base 15 by the frictional force generated between the support pins F1 to F6 and S1 to S6 and the substrate back surface Wb. 15 and rotate. Subsequently, the nozzles 3A and 3B attached to the nozzle arm 31 are moved together and positioned from the standby position P32 to the supply position P31 (step S5). Specifically, the nozzles 3A and 3B are moved to positions above the nozzle insertion holes 52A and 52B of the facing member 5 along the horizontal direction. Then, the nozzles 3A and 3B are lowered and simultaneously inserted into the nozzle insertion holes 52A and 52B.

  When the rotation speed of the substrate W reaches a predetermined speed (for example, 600 rpm), the chemical solution is continuously supplied from the nozzles 3A and 3B to the surface peripheral portion TR of the rotating substrate W. Accordingly, as shown in FIG. 8A, the chemical solution is locally supplied from the two nozzles A and 3B to the surface peripheral portion TR simultaneously. As a result, the thin film is etched and removed from the surface peripheral portion TR and the substrate end surface portion connected to the surface peripheral portion TR over the entire circumference (step S6). When the chemical liquid processing is completed, the supply of the chemical liquid is stopped and DIW is supplied from the nozzle 3A instead of the chemical liquid (FIG. 8B). As a result, a rinsing process is performed on the surface peripheral portion TR and the end surface of the substrate W (step ST7). When DIW is supplied from the nozzle 3A for a predetermined time and the rinsing process is completed, the supply of DIW is stopped.

  After the rinsing process is completed, the nozzles 3A and 3B are positioned from the processing position P31 to the standby position P32 (step S8). Subsequently, the opposing member 5 is rotated in the same direction at a rotation speed substantially the same as that of the spin base 15 (step S9). Thereafter, the processing liquid is supplied from the lower surface processing nozzle 2 to the back surface Wb of the rotating substrate W, and the back surface cleaning process is performed on the substrate back surface Wb (step S10). Specifically, the chemical liquid and the rinse liquid are sequentially supplied from the lower surface processing nozzle 2 toward the center of the substrate back surface Wb, whereby the entire back surface and the substrate end surface portion connected to the back surface Wb are cleaned.

  Here, during the cleaning process, the support pins F1 to F6, S1 to S6 are separated from the substrate back surface Wb at least once, and the contact portions of the support pins F1 to F6, S1 to S6 and the substrate back surface Wb are also processed. The part can be cleaned by wrapping in the liquid. For example, during the cleaning process, the first support from the state where the substrate W is supported by both the first support pin group including the support pins F1 to F6 and the second support pin group including the support pins S1 to S6. The state is switched to a state in which the substrate W is supported only by the pin group, and the processing liquid is introduced into the contact portion between the substrate W and the second support pin group. Then, after shifting to a state in which the substrate W is supported by both the support pin groups, the substrate W is switched to a state in which the substrate W is supported only by the second support pin group, and the contact between the substrate W and the first support pin group is changed. Allow the processing solution to wrap around the part. As a result, it is possible to perform the cleaning process on the entire back surface by causing the processing liquid to wrap around all of the contact portions between the substrate W and the support pins F1 to F6 and S1 to S6.

  Thus, when the back surface cleaning process is completed, the substrate W and the opposing member 5 are rotated at a high speed (for example, 1500 rpm). Thereby, drying of the substrate W is executed (step S11). At this time, the nitrogen gas is supplied from the gas supply path 23 together with the supply of the nitrogen gas to the substrate surface Wf, and the nitrogen gas is supplied to the front and back surfaces of the substrate W, thereby promoting the drying process of the substrate W.

  When the drying process of the substrate W is completed, the rotation of the opposing member 5 is stopped and simultaneously the rotation of the substrate W is stopped (step S12). Then, after the facing member 5 is raised (step S13), the supply of nitrogen gas from the gas discharge port 502 is stopped (step S14). As a result, the pressing and holding of the substrate W to the support pins F1 to F6 and S1 to S6 is released, and the processed substrate W is unloaded from the apparatus.

  As described above, according to this embodiment, each of the nozzles 3A and 3B has only a single discharge port 301a, and the shape of the tip of each nozzle 3A and 3B is compactly configured. be able to. For this reason, the opening part 521 of nozzle insertion hole 52A, 52B formed in the lower surface 501 of an opposing member corresponding to the nozzle 3A, 3B can be made small. Thereby, it is possible to reduce the disturbance of the airflow generated by the nitrogen gas supplied to the gap space SP. In addition, since the nozzles 3A and 3B are formed in the same shape and the nozzle insertion holes 52A and 52B are formed in the same shape, the position between the nozzles 3A and 3B and the nozzle insertion holes 52A and 52B. The relationship can be made constant. For this reason, it is possible to make uniform the influence of the nozzle insertion holes 52A and 52B and the nozzles 3A and 3B inserted into the nozzle insertion holes 52A and 52B on the airflow generated in the gap space SP. Accordingly, the substrate W can be uniformly pressed against the support pins F1 to F6 and S1 to S6.

  In addition, the two nozzles 3A and 3B are held by the single nozzle arm 31, and the nozzle arm 31 is driven to insert the two nozzles 3A and 3B into the nozzle insertion holes 52A and 52B simultaneously. Adjustment of the nozzle position of each nozzle with respect to the substrate W can be executed in a relatively short time. That is, in order to process the substrate W with an accurate and uniform peripheral processing width by the processing liquid from the nozzles 3A and 3B, it is necessary to appropriately adjust the relative positions of the nozzles 3A and 3B with respect to the substrate W. Here, considering that each of the two nozzles each having a single discharge port is simply positioned with respect to the substrate W (inserted into the nozzle insertion hole), the nozzles are driven by mutually independent driving units. Can do. However, when the configuration in which each nozzle is driven independently as described above is employed, it is necessary to adjust the nozzle position with respect to the substrate W for each nozzle, and there is a problem that much time is required for the adjustment. . On the other hand, according to this embodiment, since the relative positional relationship between the two nozzles 3A and 3B is fixed, the two nozzles 3A and 3B are regarded as one object and can be adjusted integrally. It's enough. That is, if the nozzle position of one of the two nozzles 3A and 3B is adjusted, the nozzle position of the other nozzle is automatically adjusted. Therefore, the adjustment time of the nozzle position can be greatly shortened. In addition, since the two nozzles 3A and 3B are driven by a single nozzle moving mechanism (moving means), the driving configuration is simplified compared to the case where each of the two nozzles 3A and 3B is driven independently. can do.

  In addition, according to this embodiment, the two nozzles 3A and 3B are mounted on the nozzle arm 31 adjacent to each other, and the same kind of chemical solution is simultaneously discharged from the two nozzles 3A and 3B toward the surface peripheral portion TR. Yes. For this reason, a chemical | medical solution can be supplied with the flow volume for two nozzles locally with respect to the surface peripheral part TR. As a result, even if a thin film that is hardly soluble in a chemical solution such as a SiN film or a High-k film is formed as an unnecessary object to be removed by etching (when the etching rate is low). Since the chemical solution is locally supplied to the thin film from the two nozzles 3A and 3B, unnecessary substances can be efficiently removed by etching from the surface peripheral portion TR.

  Further, according to this embodiment, after supplying the chemical liquid from the nozzle 3A to the surface peripheral portion TR of the two nozzles 3A and 3B mounted on the single nozzle arm 31, DIW is used as the rinse liquid on the surface peripheral portion TR. Supply. For this reason, the following subject at the time of driving two nozzles mutually independently can be solved.

  FIG. 9 is a diagram for explaining a problem when each of the two nozzles is driven independently of each other. In the apparatus shown in FIG. 9A, the nozzle 4A is driven by the first drive unit to the processing position (position inserted into the nozzle insertion hole of the opposing member 5A) and the standby position away from the substrate W, while the nozzle 4B. Are driven to the processing position (position inserted into the nozzle insertion hole of the facing member 5A) and the standby position away from the substrate W by the second drive unit. In addition, the chemical liquid can be supplied from the nozzle 4A to the peripheral edge of the surface of the substrate W, while DIW can be supplied from the nozzle 4B as the rinse liquid to the peripheral edge of the surface of the substrate W.

  Here, when the center of the opposing member 5A and the center of the substrate W are decentered (displaced) as shown in FIG. 9A, the relative position between the nozzles 4A and 4B and the substrate W. The relationship is different for each nozzle. As a result, the nozzle 4A is positioned on the inner side in the radial direction of the substrate W with respect to the nozzle 4B. Then, when the chemical liquid and DIW are supplied to the substrate W in such a state, the chemical liquid is supplied radially inward of the substrate W from the DIW supply position (FIG. 9B). That is, the DIW supply range becomes narrower than the chemical solution supply range. As a result, a region that cannot be treated with DIW occurs among regions treated with the chemical solution, which may cause poor rinsing. On the other hand, according to this embodiment, the chemical liquid supply position and the rinse liquid supply position with respect to the substrate W are the same regardless of the occurrence of the positional deviation between the facing member 5 and the substrate W. It is possible to prevent occurrence of poor rinsing.

Second Embodiment
FIG. 10 is a diagram showing a second embodiment of the substrate processing apparatus according to the present invention. The substrate processing apparatus according to the second embodiment differs greatly from the first embodiment in that the chemical solution is supplied from one of the two nozzles mounted on the nozzle arm 31 to the surface peripheral portion TR while the other nozzle. The DIW is supplied to the surface peripheral portion TR as the rinse liquid. Since other configurations and operations are basically the same as those in the first embodiment, the same reference numerals are given here and description thereof is omitted.

  In this embodiment, a nozzle 3C for supplying a chemical liquid to the surface peripheral portion TR and a nozzle 3D for supplying DIW as a rinse liquid to the surface peripheral portion TR are attached to the nozzle arm 31. More specifically, the nozzle arms 31 are mounted adjacent to each other along the circumferential direction of the substrate W. The nozzle 3C and the nozzle 3D are formed in the same shape except that the types of processing liquid to be discharged are different. In the state where the nozzles 3C and 3D are respectively inserted into the nozzle insertion holes 52A and 52B of the facing member 5, the nozzle 3D is located downstream of the supply position P1 of the chemical solution from the nozzle 3C in the rotation direction R of the substrate W. DIW can be supplied to the position P2 immediately after the chemical solution is supplied. Thereby, as shown in FIG. 11, the problem in the case where the nozzle 4C for supplying the chemical liquid and the nozzle 4D for supplying DIW as the rinsing liquid are arranged greatly apart can be solved.

  As shown in FIG. 11, when the nozzle 4C and the nozzle 4D are driven independently of each other, there is a limit to arranging the two nozzles 4C and 4D close to each other. The interval will be relatively large. Here, the chemical supplied from the nozzle 4C to the surface peripheral portion TR adheres to the surface peripheral portion TR, and the thin film (unnecessary material) is removed by etching from the surface peripheral portion TR. The progress of the etching by the chemical solution adhering to the surface peripheral portion TR is continued until the chemical solution is removed from the substrate W (rinsing process) upon receiving DIW from the nozzle 4D. Specifically, the etching of the thin film proceeds between the downstream side of the nozzle 4C and the upstream side of the nozzle 4D in the rotation direction R of the substrate W.

  However, when a thin film that is relatively easily etched away by a chemical solution such as a tetraethoxyorthosilane (TEOS) film is formed (when the etching rate becomes excessively high), it adheres to the surface peripheral portion TR. Before the chemical solution is removed from the substrate W, it wraps around in the radial direction of the substrate W, and the peripheral etching width is increased. As a result, it may be impossible to accurately control the peripheral etching width. Further, due to the relatively large distance between the two nozzles 4C and 4D, the time during which the chemical solution stays in the surface peripheral portion TR is also long, and during this time, the chemical solution is in the center of the surface of the substrate W (non-processing region NTR). There is a risk of bouncing back.

  On the other hand, according to this embodiment, the two nozzles 3C and 3D are driven while being held by the single nozzle arm 31. Therefore, the two nozzles 3C and 3D can be disposed sufficiently close to each other, and DIW can be supplied to the position P2 immediately after the chemical liquid is supplied downstream from the chemical liquid supply position P1. . For this reason, even when a thin film that is relatively easily etched away by a chemical solution such as a TEOS film is formed as an unnecessary object to be removed by etching, the chemical solution supplied to the surface peripheral portion TR It is possible to suppress the progress of the etching to the inside in the radial direction. As a result, the peripheral edge etching width can be accurately controlled. Further, by supplying the rinse liquid to the position P2 immediately after the chemical liquid is supplied, it is possible to prevent the chemical liquid from bouncing back to the non-treatment region NTR.

<Others>
The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the processing liquid is supplied to the surface peripheral portion TR of the substrate W to remove unnecessary substances (thin films) present on the surface peripheral portion TR. However, the scope of application of the present invention is not limited to this, and the present invention can also be applied to an apparatus that performs a predetermined surface treatment by supplying a processing liquid to a predetermined region of the substrate surface Wf.

  In the above embodiment, two nozzles are mounted on the nozzle arm 31, but the number of nozzles is not limited to this, and three or more nozzles may be mounted on the nozzle arm 31. In this case, in the first embodiment, it is only necessary that at least one of the three or more nozzles is supplied with DIW as the rinse liquid and can supply DIW to the substrate surface Wf.

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention can be applied to a substrate processing apparatus that supplies a processing liquid to various substrates including a substrate and performs a predetermined surface treatment on the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows 1st Embodiment of the substrate processing apparatus concerning this invention. It is a block diagram which shows the main control structures of the substrate processing apparatus of FIG. It is the top view which looked at the spin base from the upper part. It is the elements on larger scale which show the structure of a support pin. It is the figure which looked at the lower surface of the opposing member. It is a fragmentary perspective view which shows a nozzle and a nozzle insertion hole. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a schematic diagram which shows operation | movement of a chemical | medical solution process and a rinse process. It is a figure for demonstrating the subject at the time of driving each of two nozzles mutually independently. It is a figure which shows 2nd Embodiment of the substrate processing apparatus concerning this invention. It is a figure for demonstrating the subject at the time of driving each of two nozzles mutually independently.

Explanation of symbols

3A, 3B ... Nozzle 3C ... Chemical nozzle (nozzle)
3D ... rinse nozzle (nozzle)
5 ... Opposing member 13 ... Chuck rotating mechanism (rotating means)
15 ... Spin base (rotating member)
18 ... Gas supply unit (pressing means)
31 ... Nozzle arm (holding plate, holding means)
33 ... Nozzle moving mechanism (moving means)
52A, 52B ... Nozzle insertion hole 81 ... First pipe (rinsing liquid supply means)
85 ... Second piping (chemical solution supply means)
87 ... Piping (chemical solution supply means)
301a: Discharge port 501: Lower surface of the opposing member (substrate facing surface)
521... (Opening of nozzle insertion hole) F1 to F6... First support pin (support member)
P1 ... (chemical solution) supply position P2 ... Immediate position R ... Rotation direction S1-S6 ... Second support pin (support member)
SP ... Gap space TR ... Front edge W ... Substrate Wb ... Substrate back Wf ... Substrate surface

Claims (6)

In a substrate processing apparatus for performing a predetermined surface treatment by supplying a treatment liquid to the surface of the substrate while rotating the substrate,
A rotating member provided rotatably;
Rotating means for rotating the rotating member;
A plurality of nozzles formed in the same shape as each other, each having a single discharge port for discharging the processing liquid toward the substrate surface,
A single holding means for holding the plurality of nozzles;
Three or more support members that protrude upward from the rotating member, abut against the back surface of the substrate, and support the substrate apart from the rotating member;
A plurality of nozzle insertion holes, which are spaced apart from the surface of the substrate supported by the support member and have openings on the substrate facing surface facing the substrate surface, have the same shape corresponding to the plurality of nozzles. An opposing member formed on
A pressing means for supplying a gas to a gap space formed between the substrate facing surface and the substrate surface to press the substrate against the support member and hold the rotating member;
And a moving unit that allows the processing liquid to be discharged from the plurality of nozzles by moving the holding unit and simultaneously inserting the plurality of nozzles into each of the plurality of nozzle insertion holes. Substrate processing equipment. The plurality of nozzle insertion holes are formed in a peripheral edge portion of the opposing member,
The substrate processing apparatus according to claim 1, wherein each of the plurality of nozzles held by the holding unit is supplied to the peripheral edge of the surface of the substrate while being inserted into each nozzle insertion hole. The substrate processing apparatus according to claim 2, wherein unnecessary substances present on the surface peripheral edge of the substrate are removed from the surface peripheral edge by etching with a chemical solution,
The plurality of nozzles are held by the holding means adjacent to each other;
Chemical solution supply means for supplying the same kind of chemical solution as the processing liquid to each of the plurality of nozzles communicates with the plurality of nozzles, and each of the plurality of nozzles supplies the chemical solution from the chemical solution supply means to the substrate. The substrate processing apparatus which discharges simultaneously toward the surface peripheral part.   A rinsing liquid supply means for supplying a rinsing liquid as the processing liquid to the nozzle is communicated with at least one or more nozzles of the plurality of nozzles, and after the chemical liquid is supplied to the peripheral edge of the surface of the substrate, The substrate processing apparatus according to claim 3, wherein the rinsing liquid from the rinsing liquid supply unit is discharged toward a peripheral edge portion of the surface of the substrate. The substrate processing apparatus according to claim 2, wherein unnecessary substances present on the surface peripheral edge of the substrate are removed from the surface peripheral edge by etching with a chemical solution,
The holding means holds the two nozzles adjacent to each other;
One of the two nozzles is a chemical nozzle that supplies a chemical to the surface peripheral edge of the substrate, and the other is a rinse nozzle that supplies a rinsing liquid to the peripheral surface of the substrate,
The substrate processing apparatus, wherein the rinse nozzle supplies the rinse liquid to a position immediately after the chemical liquid is supplied downstream of the chemical liquid supply position from the chemical liquid nozzle in the rotation direction of the substrate. The substrate processing apparatus according to claim 1, wherein the holding unit has a single holding plate on which the plurality of nozzles are mounted.

Images