JP5706981B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate etc. are included.

  In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. For example, Patent Documents 1 and 2 describe single-wafer type substrate processing apparatuses that process substrates one by one. This single wafer type substrate processing apparatus is configured to process the peripheral portion of the surface of a substrate such as a semiconductor wafer with a processing liquid.

  Specifically, the single-wafer type substrate processing apparatus includes a spin chuck that horizontally holds and rotates a substrate, a blocking plate disposed above the spin chuck, and a processing liquid toward an upper peripheral edge of the substrate. And a nozzle that discharges water. The nozzle is supported by the arm. The nozzle and the arm are integrally moved in the horizontal direction and the vertical direction by the drive mechanism. The blocking plate has a lower surface facing the upper surface of the substrate held by the spin chuck, and a nozzle insertion hole that penetrates the blocking plate in the thickness direction and opens at the lower surface of the blocking plate. The nozzle insertion hole is formed at a position facing the peripheral edge of the upper surface of the substrate held by the spin chuck. The size of the nozzle insertion hole is set so that the nozzle can move a predetermined amount in the nozzle insertion hole.

  When the peripheral portion of the surface of the substrate is processed with the processing liquid by the single-wafer type substrate processing apparatus, the nozzle is placed in a state where the lower surface of the blocking plate is in close proximity to the upper surface (front surface) of the substrate held by the spin chuck. It is inserted into the nozzle insertion hole. In this state, the processing liquid is discharged from the nozzle toward the peripheral edge of the upper surface of the rotating substrate. As a result, the processing liquid is supplied to the annular region (processing region) on the upper surface of the substrate, and the peripheral edge of the upper surface of the substrate is processed. When the processing width (the shortest distance in the direction parallel to the substrate from the inner peripheral edge of the annular processing region to the peripheral edge surface of the substrate) is changed, the nozzle is moved in the nozzle insertion hole by the drive mechanism, The processing liquid supply position (processing liquid spray position) to the substrate is changed.

JP 2007-142077 A JP 2009-21339 A

  In the substrate processing apparatuses according to Patent Documents 1 and 2, when the processing width is changed, the nozzle is moved in the nozzle insertion hole. The processing width depends on the position of the nozzle in the nozzle insertion hole. The position of the nozzle depends on the movement accuracy of the drive mechanism. However, since the nozzle is connected to the drive mechanism via the arm, in order to precisely control the position of the nozzle in the nozzle insertion hole, very high movement accuracy is required for the drive mechanism. For this reason, in order to precisely control the processing width, it is necessary to use highly accurate parts, which increases the cost of the drive mechanism. As a result, the cost of the substrate processing apparatus increases.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus capable of suppressing an increase in cost required for a mechanism for driving a nozzle.

  In order to achieve the above object, the invention according to claim 1 is arranged at a position away from a substrate holding mechanism for holding a substrate and a straight line perpendicular to the center of the main surface of the substrate held by the substrate holding mechanism. The main surface of the substrate held by the substrate holding mechanism is configured to rotate around a predetermined rotation axis passing through the main surface of the substrate and has a discharge port disposed at a position away from the rotation axis. A nozzle that discharges the processing liquid toward a part of the peripheral edge of the substrate, and a substrate held by the substrate holding mechanism so that the supply position of the processing liquid to the substrate moves along the peripheral edge of the main surface of the substrate A relative movement mechanism for relatively moving the nozzle, a nozzle rotation mechanism for rotating the nozzle around the rotation axis, a treatment liquid supply mechanism for supplying a treatment liquid to the nozzle, and a rotation of the nozzle to the nozzle rotation mechanism. By changing the angle, the processing width of the annular processing region to which the processing liquid discharged from the nozzle is supplied, that is, in the direction parallel to the substrate from the inner peripheral edge of the annular processing region to the peripheral end surface of the substrate. A substrate processing apparatus including a rotation angle control device that adjusts the shortest distance.

  According to this configuration, the substrate and the nozzle held by the substrate holding mechanism are relatively moved by the relative movement mechanism while the processing liquid is being discharged from the nozzle. The processing liquid supply position (processing liquid spraying position) with respect to the substrate moves along the peripheral edge of the main surface of the substrate by the relative movement of the substrate and the nozzle. Therefore, when the substrate processing apparatus is configured such that the processing liquid supplied to the substrate spreads outward (in the direction away from the center of the substrate) along the main surface of the substrate, The processing liquid is supplied to an annular region (processing region) including the supply position and the region outside thereof. Thereby, the peripheral part of the main surface of a board | substrate is processed.

  The adjustment of the processing width (the shortest distance in the direction parallel to the substrate from the inner peripheral edge of the annular processing region to the peripheral end surface of the substrate) is performed by the rotation of the nozzle. Specifically, the nozzle is configured to be able to rotate around a predetermined rotation axis passing through the main surface of the substrate held by the substrate holding mechanism. The discharge port of the nozzle is disposed at a position away from the rotation axis. When the nozzle is rotated by the nozzle rotating mechanism, the supply position of the processing liquid to the substrate moves in a direction away from the center of the substrate or a direction approaching the center of the substrate. Therefore, the processing width is adjusted by the rotation of the nozzle.

  Thus, since the processing width depends on the rotation angle of the nozzle around the rotation axis, the processing width can be adjusted with high accuracy with a simple configuration for rotating the nozzle. Therefore, a mechanism (nozzle rotation mechanism) for adjusting the processing width is simplified compared to the conventional configuration in which the processing width is adjusted by moving the nozzle in the nozzle insertion hole. Thereby, the cost of the substrate processing apparatus is reduced.

  The relative movement mechanism may be configured to move only the substrate held by the substrate holding mechanism or only the nozzle, or may be configured to move both the substrate and the nozzle. Also good. The relative movement mechanism may include a substrate rotation mechanism (10) for rotating the substrate around an axis passing through the main surface of the substrate held by the substrate holding mechanism. In this case, the processing liquid supplied to the peripheral portion of the main surface of the substrate spreads outward due to the centrifugal force generated by the rotation of the substrate. Accordingly, the processing liquid discharged from the nozzle is supplied to an annular region (processing region) including the processing liquid supply position with respect to the substrate and the region outside the processing liquid.

  The nozzle includes a vertical nozzle (5, 205, 305, 405) configured to spray a processing liquid perpendicularly to a peripheral portion of the main surface of the substrate held by the substrate holding mechanism. Alternatively, an inclined nozzle (805) configured to spray the processing liquid obliquely with respect to the peripheral edge of the main surface of the substrate may be included. Specifically, the inclined nozzle is configured such that the processing liquid is sprayed obliquely in a direction away from the center of the substrate with respect to the peripheral portion of the main surface of the substrate held by the substrate holding mechanism. Also good. In this case, the processing liquid sprayed on the substrate spreads outward along the main surface of the substrate. Therefore, the processing liquid discharged from the inclined nozzle is supplied to an annular area (processing area) including the supply position of the processing liquid with respect to the substrate and the area outside thereof.

  Further, as in a second aspect of the invention, the rotation axis of the nozzle may be a vertical axis passing through the main surface of the substrate held by the substrate holding mechanism.

  Further, as in the invention described in claim 3, the nozzle may have a central axis (L2) located on the rotation axis and an end surface (5a) on which the discharge port is formed.

  According to a fourth aspect of the present invention, the nozzle is formed so that the processing liquid is discharged downward from the discharge port toward the peripheral portion of the main surface of the substrate held by the substrate holding mechanism. May be.

  According to a fifth aspect of the present invention, the processing liquid supply mechanism is configured to supply a plurality of types of processing liquids including a first chemical liquid and a second chemical liquid to the nozzle, and the discharge port includes the first chemical liquid. A first chemical solution discharge port (56a, 256a) for discharging a chemical solution and a second chemical solution discharge port (57a, 257a) for discharging the second chemical solution, wherein the nozzle is connected to the first chemical solution discharge port; The first chemical liquid flow path (52) and the second chemical liquid flow path (54) connected to the second chemical liquid discharge port and provided independently of the first chemical liquid flow path. It is a substrate processing apparatus as described in any one of -4.

  According to this configuration, a plurality of types of processing liquids including the first chemical liquid and the second chemical liquid are supplied from the processing liquid supply mechanism to the nozzle. The first chemical liquid supplied to the nozzle is supplied to the first chemical liquid discharge port through the first chemical liquid flow path. Further, the second chemical liquid supplied to the nozzle is supplied to the second chemical liquid discharge port through the second chemical liquid flow path. Since the first chemical liquid flow path and the second chemical liquid flow path are provided independently of each other, the first chemical liquid and the second chemical liquid supplied to the nozzle do not mix in the nozzle. Therefore, when the type of the chemical solution is switched, for example, it is not necessary to clean the flow path to prevent mixing of different types of chemical solutions. Therefore, the type of the chemical solution can be switched without undergoing such processing. Thereby, the processing time when processing a board | substrate using both the 1st chemical | medical solution and the 2nd chemical | medical solution is shortened.

  According to a sixth aspect of the present invention, the processing liquid supply mechanism is configured to supply a plurality of types of processing liquids including a chemical liquid and a rinsing liquid to the nozzle, and the rotation angle control device includes the nozzle rotation mechanism. The substrate according to any one of claims 1 to 5, wherein the rotation angle of the nozzle is controlled such that the rinsing liquid is supplied to the center side of the substrate from the supply position of the chemical solution to the substrate. It is a processing device.

  According to this configuration, a plurality of types of processing liquids including the chemical liquid and the rinsing liquid are supplied from the processing liquid supply mechanism to the nozzle. Thereby, a plurality of types of processing liquids including the chemical liquid and the rinsing liquid are discharged from the discharge port of the nozzle and supplied to the peripheral portion of the main surface of the substrate. Further, by controlling the nozzle rotation mechanism by the rotation angle control device, the rotation angle of the nozzle around the rotation axis is adjusted so that the rinse liquid is supplied to the center side of the substrate from the supply position of the chemical solution to the substrate. The Therefore, when the substrate processing apparatus is configured such that the processing liquid supplied to the substrate spreads outward along the main surface of the substrate, the rinsing liquid is applied to the substrate after the chemical liquid is supplied to the substrate. By being supplied, the rinsing liquid is supplied to all regions (a part of the main surface of the substrate) to which the chemical liquid has been supplied. Thereby, the chemical | medical solution adhering to a board | substrate is wash | cleaned reliably by the rinse liquid.

  According to a seventh aspect of the present invention, the discharge port includes a chemical solution discharge port (56a, 57a, 256a, 257a) and a rinse solution discharge port (56b, 57b, 256b, 257b) arranged in the rotation direction (D1) of the nozzle. Is a substrate processing apparatus according to any one of claims 1 to 6.

  According to this configuration, the chemical liquid discharge port and the rinse liquid discharge port are arranged in the rotation direction of the nozzle. That is, the chemical solution discharge port and the rinse solution discharge port are disposed on a circumference having a center on the rotation axis on a plane orthogonal to the rotation axis. Therefore, the positions (proximity positions) at which the chemical liquid discharge port and the rinse liquid discharge port are closest to the center of the substrate coincide. Similarly, the positions (separation positions) at which the chemical liquid discharge port and the rinse liquid discharge port are farthest from the center of the substrate coincide with each other. Therefore, in both the chemical treatment and the rinse treatment, a wide and equal adjustment range (adjustment range of the treatment width) is ensured. Further, if the chemical liquid is discharged from the chemical liquid discharge port at a position other than the proximity position, the rinse liquid can be supplied to the center side of the substrate from the supply position of the chemical liquid to the substrate. As a result, the rinsing liquid is supplied to all the regions (a part of the main surface of the substrate) to which the chemical liquid is supplied, and the chemical liquid adhering to the substrate is reliably washed away by the rinsing liquid.

It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a bottom view of the interruption | blocking board with which the substrate processing apparatus which concerns on 1st Embodiment of this invention was equipped. 1 is a plan view of a spin chuck and a configuration related thereto according to a first embodiment of the present invention. It is a side view of the support pin which concerns on 1st Embodiment of this invention, and the structure relevant to this. It is a side view of the support pin which concerns on 1st Embodiment of this invention, and the structure relevant to this. It is a fragmentary sectional view of a nozzle in the state where a nozzle concerning a 1st embodiment of the present invention exists in a processing position, and the composition relevant to this. It is a figure which shows a part of lower surface of the nozzle in the state which has the nozzle which concerns on 1st Embodiment of this invention in a processing position, and the lower surface of a shielding board. It is a block diagram for demonstrating the electrical constitution of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is process drawing for demonstrating an example of the process of the board | substrate by the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a figure which shows a part of lower surface of the nozzle in the state which has the nozzle which concerns on 2nd Embodiment of this invention in a process position, and the lower surface of a shielding board. It is a figure which shows a part of lower surface of the nozzle in the state which has the nozzle which concerns on 3rd Embodiment of this invention in a process position, and the lower surface of a shielding board. It is a fragmentary sectional view of a nozzle in the state where a nozzle concerning a 4th embodiment of the present invention exists in a processing position, and the composition relevant to this. It is a side view of the nozzle rotation mechanism which concerns on 5th Embodiment of this invention, and the structure relevant to this. It is a partial side view of the substrate processing apparatus which concerns on 6th Embodiment of this invention. It is a partial side view of the substrate processing apparatus which concerns on 7th Embodiment of this invention. It is a fragmentary sectional view of the nozzle in the state which has the nozzle which concerns on 8th Embodiment of this invention in a process position, and the structure relevant to this. It is a top view of the substrate processing apparatus concerning a 9th embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a bottom view of the blocking plate 4 provided in the substrate processing apparatus 1 according to one embodiment of the present invention. Below, with reference to FIG. 1, schematic structure of the substrate processing apparatus 1 is demonstrated. In the following description, FIG. 2 will be referred to as appropriate.

  The substrate processing apparatus 1 is an apparatus for processing a circular substrate W such as a semiconductor wafer. The substrate processing apparatus 1 is an apparatus configured to process a peripheral portion of the front surface of the substrate W that is a device forming surface, a back surface of the substrate W that is a non-device forming surface, and a peripheral end surface of the substrate W. The substrate processing apparatus 1 includes a spin chuck 3 (substrate holding mechanism) for horizontally holding and rotating a substrate W in a processing chamber 2 partitioned by a partition wall (not shown), and a blocking plate disposed above the spin chuck 3. 4 (opposing member), two nozzles 5 (columnar nozzles) that discharge the processing liquid toward the peripheral edge of the upper surface of the substrate W, and a processing liquid supply mechanism 6 that supplies the processing liquid to the nozzles 5. .

  The spin chuck 3 includes a rotary shaft 7 that extends vertically, a disk-shaped spin base 8 that is horizontally attached to the upper end of the rotary shaft 7, a plurality of support pins 9 that are disposed on the spin base 8, and a rotary shaft 7. And a chuck rotation mechanism 10 (relative movement mechanism) coupled to each other. The plurality of support pins 9 are arranged at equal intervals in the circumferential direction of the spin base 8 at the periphery of the upper surface of the spin base 8 (see FIG. 3). The spin chuck 3 is configured to horizontally support the substrate W above the spin base 8 by bringing the upper ends of the plurality of support pins 9 into contact with the peripheral edge of the lower surface of the substrate W. As will be described later, the substrate W supported by the plurality of support pins 9 is pressed against the plurality of support pins 9 by the gas blown from the blocking plate 4. In this state, the driving force of the chuck rotating mechanism 10 is input to the rotating shaft 7. As a result, the substrate W supported by the plurality of support pins 9 rotates integrally with the plurality of support pins 9 by the frictional force generated between the plurality of support pins 9. As a result, the substrate W supported by the plurality of support pins 9 is rotated around the vertical axis (rotation center L1). The chuck rotating mechanism 10 includes an actuator such as a motor. The chuck rotating mechanism 10 may include a transmission mechanism such as a gear mechanism and a pulley / belt mechanism in addition to the actuator.

  Each support pin 9 includes a vertically extending rod 11, a first support portion 12 connected to the upper end of the rod 11, a cylindrical bellows 13 surrounding the rod 11, and the rod 11 and the first support portion 12. And a pin elevating mechanism 14 that elevates and lowers integrally. Each of the first support portions 12 is configured to make point contact with the peripheral edge of the lower surface of the substrate W. Each first support portion 12 is lifted and lowered in the vertical direction by a corresponding pin lifting mechanism 14 between a support position and a retracted position that is a position directly below the support position. The support position of each first support part 12 is the same height, and the retracted position of each first support part 12 is the same height. The substrate W supported by the plurality of support pins 9 is moved up and down in the vertical direction above the spin base 8 as the plurality of support pins 9 are moved up and down in synchronization. The plurality of support pins 9 are divided into a first support pin group 9a and a second support pin group 9b each composed of three or more support pins 9 (see FIG. 3). The plurality of support pins 9 constituting the first support pin group 9a are moved up and down in synchronization. Similarly, the plurality of support pins 9 constituting the second support pin group 9b are moved up and down in synchronization. The plurality of support pins 9 constituting the first support pin group 9 a and the plurality of support pins 9 constituting the second support pin group 9 b are alternately arranged in the circumferential direction of the spin base 8.

  Moreover, the rotating shaft 7 is formed hollow. The lower processing liquid supply pipe 15 is inserted through the inner periphery of the rotating shaft 7. The cylindrical lower gas supply path 16 is formed between the inner peripheral surface of the rotating shaft 7 and the outer peripheral surface of the lower processing liquid supply pipe 15. The upper end of the lower gas supply path 16 forms an annular lower gas discharge port 17 located at the center of the upper surface of the spin base 8. Further, the lower surface nozzle 18 is connected to the upper end of the lower processing liquid supply pipe 15. The discharge port 18 a of the lower surface nozzle 18 is disposed above the spin base 8. The lower surface nozzle 18 is configured such that the discharge port 18 a faces the lower surface central portion of the substrate W supported by the plurality of support pins 9.

  The lower chemical liquid supply pipe 19 and the lower rinse liquid supply pipe 20 are connected to the lower processing liquid supply pipe 15. The lower chemical liquid valve 21 and the lower rinse liquid valve 22 are interposed in the lower chemical liquid supply pipe 19 and the lower rinse liquid supply pipe 20, respectively. The chemical liquid and the rinse liquid are supplied to the lower processing liquid supply pipe 15 through the lower chemical liquid supply pipe 19 and the lower rinse liquid supply pipe 20, respectively. The chemical liquid and the rinsing liquid are selectively supplied to the lower processing liquid supply pipe 15 by controlling the opening and closing of the lower chemical liquid valve 21 and the lower rinsing liquid valve 22. The lower surface nozzle 18 is configured to discharge the chemical liquid or the rinsing liquid supplied from the lower processing liquid supply pipe 15 toward the center of the lower surface of the substrate W.

  Examples of the chemical solution supplied to the lower processing solution supply pipe 15 include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acids (for example, citric acid and oxalic acid), and organic alkalis (for example, Examples thereof include a liquid containing at least one of TMAH (tetramethylammonium hydroxide, etc.), a surfactant and a corrosion inhibitor. The rinse liquid supplied to the lower processing liquid supply pipe 15 includes pure water (deionized water), carbonated water, electrolytic ionic water, hydrogen water, ozone water, IPA (isopropyl alcohol), HFE (hydrofluoroether). ) And dilute concentration (for example, about 10 to 100 ppm) hydrochloric acid and the like.

  The lower gas supply pipe 23 is connected to the lower gas supply path 16. The lower gas valve 24 is interposed in the lower gas supply pipe 23. Nitrogen gas, which is an example of gas, is supplied to the lower gas supply path 16 via the lower gas supply pipe 23. The nitrogen gas supplied to the lower gas supply path 16 is discharged from the lower gas discharge port 17. Nitrogen gas discharged from the lower gas discharge port 17 passes between the upper surface central portion of the spin base 8 and the lower surface nozzle 18 and spreads radially above the spin base 8. The supply of nitrogen gas to the lower gas supply path 16 is controlled by opening and closing the lower gas valve 24. The gas supplied to the lower gas supply path 16 is not limited to nitrogen gas, and may be inert gas other than nitrogen gas, dry air, or clean air.

  The blocking plate 4 is a disk-shaped member formed in a hollow shape. The blocking plate 4 is connected in a horizontal posture to the lower end of a support shaft 25 formed in a hollow shape. The internal space of the blocking plate 4 communicates with the internal space of the support shaft 25. As shown in FIG. 2, the central axis of the blocking plate 4 is disposed on the rotation center L <b> 1 of the spin chuck 3. The blocking plate 4 includes a circular and flat lower surface 26 (opposing surface), a plurality of gas discharge ports 27 formed on the lower surface 26 of the blocking plate 4, a flow space 28 provided inside the blocking plate 4, and a blocking And two nozzle insertion holes 29 formed on the peripheral edge of the plate 4. The lower surface 26 of the blocking plate 4 has substantially the same diameter as the substrate W or a slightly larger diameter than the substrate W. The shielding plate 4 is disposed so that the lower surface 26 of the shielding plate 4 is horizontal. The blocking plate 4 is configured such that the lower surface 26 of the blocking plate 4 faces the upper surface of the substrate W held by the spin chuck 3.

  Further, as shown in FIG. 2, the plurality of gas discharge ports 27 are arranged on a predetermined circumference having a center on the central axis of the blocking plate 4 at intervals. Each gas discharge port 27 is disposed outside the central portion in the radial direction of the blocking plate 4. Each gas discharge port 27 communicates with the circulation space 28. The circulation space 28 communicates with each nozzle insertion hole 29 through a corresponding communication passage 30. Each nozzle insertion hole 29 penetrates the peripheral portion of the blocking plate 4 in the thickness direction of the blocking plate 4 (vertical direction in FIG. 1). As will be described later, the two nozzles 5 are respectively inserted into the two nozzle insertion holes 29. As shown in FIG. 2, the two nozzle insertion holes 29 are arranged symmetrically with respect to the central axis of the blocking plate 4. Thereby, the bias | inclination of the gravity center of the interruption | blocking board 4 is prevented.

  The upper gas supply pipe 31 is connected to the upper end portion of the support shaft 25. The upper gas valve 32 is interposed in the upper gas supply pipe 31. Nitrogen gas, which is an example of gas, is supplied to the support shaft 25 via the upper gas supply pipe 31. The nitrogen gas supplied to the support shaft 25 is discharged downward from the plurality of gas discharge ports 27 through the flow space 28 of the blocking plate 4. Further, the nitrogen gas supplied to the circulation space 28 of the blocking plate 4 is supplied to each nozzle insertion hole 29 via each communication path 30. Nitrogen gas supplied to each nozzle insertion hole 29 is discharged upward and downward from the upper end and lower end of each nozzle insertion hole 29, respectively. When nitrogen gas is discharged from the plurality of gas discharge ports 27 in a state where the substrate W is supported by the plurality of support pins 9 and the blocking plate 4 is in the proximity position (position shown in FIG. 1), the substrate W is pressed against each support pin 9 by nitrogen gas blown from the blocking plate 4. The gas supplied to the shielding plate 4 is not limited to nitrogen gas, but may be inert gas other than nitrogen gas, dry air, or clean air.

  Further, the shield plate lifting mechanism 33 and the shield plate rotating mechanism 34 are coupled to the support shaft 25. The support shaft 25 and the shield plate 4 are close to each other so that the lower surface 26 of the shield plate 4 is close to the upper surface of the substrate W held by the spin chuck 3 when the driving force of the shield plate lifting mechanism 33 is input to the support shaft 25. The position is lifted and lowered integrally between the position and the retracted position where the blocking plate 4 is largely retracted above the spin chuck 3. Further, the support shaft 25 and the blocking plate 4 are integrally rotated around the rotation center L <b> 1 of the spin chuck 3 when the driving force of the blocking plate rotating mechanism 34 is input to the support shaft 25. The blocking plate rotating mechanism 34 is configured to be able to precisely control the rotation angle of the blocking plate 4. The blocking plate rotating mechanism 34 includes, for example, a servo motor. For example, the blocking plate rotating mechanism 34 may be controlled such that the rotation of the blocking plate 4 is synchronized with the rotation of the substrate W, or the blocking plate 4 rotates at a speed different from the rotation speed of the substrate W. Further, the blocking plate rotating mechanism 34 may be omitted, and the blocking plate 4 may be fixed in a non-rotating state.

  Each nozzle 5 is formed in a cylindrical shape, for example. Each nozzle 5 is arranged vertically. Each nozzle 5 is configured to discharge the processing liquid supplied from the processing liquid supply mechanism 6 downward from a discharge port formed on the lower surface 5 a (end surface) of the nozzle 5. The upper end portion of each nozzle 5 is connected to the corresponding nozzle rotation mechanism 35. Each nozzle rotation mechanism 35 is connected to a corresponding nozzle arm 36. Each nozzle 5 is supported by a corresponding nozzle arm 36. Each nozzle 5 is rotated around the central axis L2 (rotation axis) of the nozzle 5 by the corresponding nozzle rotation mechanism 35. Each central axis L <b> 2 is a vertical axis passing through the upper surface of the substrate W held by the spin chuck 3. Each nozzle rotation mechanism 35 includes an actuator such as a motor.

  Each nozzle arm 36 is connected to a corresponding arm rotation mechanism 37. Each arm rotation mechanism 37 is connected to a corresponding arm lifting mechanism 38. Each arm rotation mechanism 37 is configured to rotate the corresponding nozzle arm 36 around a vertical rotation axis L3 provided around the spin chuck 3. Each arm raising / lowering mechanism 38 is configured to raise / lower the corresponding nozzle arm 36 in the vertical direction. As each nozzle arm 36 is rotated about the rotation axis L3, each nozzle 5 is moved horizontally. Further, each nozzle arm 36 is moved up and down in the vertical direction, whereby each nozzle 5 is moved in the vertical direction.

  Each nozzle 5 is horizontally moved between a retracted position and an intermediate position (a position indicated by a two-dot chain line in FIG. 1) by a corresponding arm rotation mechanism 37. Each nozzle 5 is moved in the vertical direction between an intermediate position and a processing position (position indicated by a solid line in FIG. 1) by a corresponding arm lifting mechanism 38. The retracted position is a position far away from the spin chuck 3 and the blocking plate 4. The intermediate position is a position directly above the blocking plate 4. The processing position is a position where each nozzle 5 is disposed in the nozzle insertion hole 29 and the lower surface 5 a of each nozzle 5 is disposed on the same plane as the lower surface 26 of the blocking plate 4. When each nozzle 5 is arranged at the processing position, the shielding plate 4 is rotated by the shielding plate rotating mechanism 34 and is arranged at the nozzle insertion position (position shown in FIG. 1). The nozzle insertion position is a position where the two nozzle insertion holes 29 are respectively located directly below the intermediate position of the two nozzles 5. Each nozzle 5 is lowered in a state where the blocking plate 4 is arranged at the nozzle insertion position. As a result, each nozzle 5 enters the corresponding nozzle insertion hole 29, and each nozzle 5 is arranged at the processing position.

  Further, when each nozzle 5 is moved from the retracted position to the intermediate position, for example, the nozzle 5 and the corresponding nozzle arm 36 are brought into contact with the stopper 39 to be positioned at the intermediate position. In FIG. 1, only the stopper 39 corresponding to one nozzle 5 is shown. The position of each stopper 39 is set so that the corresponding nozzle 5 is accurately positioned at the intermediate position. Therefore, as long as each arm rotation mechanism 37 is configured so that the nozzle 5 or the nozzle arm 36 can be brought into contact with the stopper 39, high movement accuracy for accurately arranging the nozzle 5 at the intermediate position is not required. Thereby, the structure of the arm rotation mechanism 37 is simplified, and the cost of the arm rotation mechanism 37 is reduced.

FIG. 3 is a plan view of the spin chuck 3 and a configuration related thereto. 4 and 5 are side views of the support pin 9 and the configuration related thereto, respectively. FIG. 4 shows a state where the support pin 9 is in the support position, and FIG. 5 shows a state where the support pin 9 is in the retracted position.
The substrate processing apparatus 1 further includes a positioning mechanism 40 configured to position the substrate W at a predetermined position. As shown in FIG. 3, the positioning mechanism 40 includes two fixing pins 41 and two stoppers 42 arranged on the spin base 8, a pressing block 43, and a block moving mechanism 44. The two fixing pins 41 and the two stoppers 42 are respectively disposed between the support pins 9 adjacent to each other on the peripheral edge of the upper surface of the spin base 8. One fixing pin 41 is disposed at a position where the phase around the rotation axis is approximately 180 degrees different from one stopper 42. Similarly, the other fixing pin 41 is disposed at a position where the phase around the rotation axis is approximately 180 degrees different from the other stopper 42.

  Each fixing pin 41 has a second support portion 45 provided at the upper end portion of the fixing pin 41. Further, as shown in FIG. 3, each stopper 42 has a third support portion 46 provided at the upper end portion of the stopper 42 and a stopper surface 47 that comes into contact with the peripheral end surface of the substrate W. . Each of the second support portions 45 and each of the third support portions 46 is configured to make point contact with the peripheral surface of the lower surface of the substrate W at the same height. The two second support portions 45 and the two third support portions 46 are configured to support the substrate W in cooperation by abutting against the peripheral edge of the lower surface of the substrate W. Each stopper surface 47 is formed on the peripheral end surface of the substrate W when the center of the substrate W supported by the two fixing pins 41 and the two stoppers 42 is disposed on the rotation center L1 of the spin chuck 3. It is provided at a position where it abuts. Therefore, when the peripheral end surfaces of the substrate W supported by the two fixing pins 41 and the two stoppers 42 are brought into contact with the two stopper surfaces 47, the center of the substrate W is on the rotation center L1 of the spin chuck 3. Be placed.

  As shown in FIG. 4, the upper end position of each second support portion 45 is lower than the upper end position of each first support portion 12 disposed at the support position. As shown in FIG. 5, the upper end position of each second support portion 45 is higher than the upper end position of each first support portion 12 disposed at the retracted position. Although not shown, the upper end position of each third support portion 46 is also lower than the upper end position of each first support portion 12 disposed at the support position, and is disposed at the retracted position, similarly to each second support portion 45. Further, it is higher than the upper end position of each first support portion 12. Therefore, as can be seen by referring to FIG. 4 and FIG. 5 together, the plurality of support pins 9 are moved up and down synchronously, so that the space between the plurality of support pins 9 and the two fixing pins 41 and the two stoppers 42 is increased. Then, the substrate W is transferred.

  Moreover, the press block 43 is formed in the column shape, for example. The pressing block 43 is arranged vertically at a position higher than the spin base 8. The pressing block 43 is horizontally moved by the block moving mechanism 44 between a contact position (a position indicated by a two-dot chain line in FIG. 3) and a non-contact position (a position indicated by a solid line in FIG. 3). The abutting position is such that when the center of the substrate W supported by the two fixing pins 41 and the two stoppers 42 is disposed on the rotation center L1 of the spin chuck 3, the outer peripheral surface of the pressing block 43 is the substrate W. It is a position that comes into contact with the peripheral end surface. Further, the non-contact position is a position farther from the rotation center L1 of the spin chuck 3 than the contact position. The pressing block 43 is moved from the non-contact position to the contact position in a state where the center of the substrate W supported by the two fixing pins 41 and the two stoppers 42 is shifted from the rotation center L1 of the spin chuck 3. Then, the substrate W is pressed horizontally by the pressing block 43 toward the two stopper surfaces 47.

  When the substrate W is transferred from the transfer robot (not shown) to the spin chuck 3, for example, all the support pins 9 are arranged in advance at the retracted position. In this state, the substrate W is transferred to the spin chuck 3. That is, the substrate W is placed on the two fixing pins 41 and the two stoppers 42. After the substrate W is placed, the pressing block 43 is horizontally moved toward the contact position by the block moving mechanism 44. At this time, if the center of the substrate W is deviated from the rotation center L1 of the spin chuck 3, the pressing block 43 comes into contact with the peripheral end surface of the substrate W and the substrate W is pressed horizontally. Then, the substrate W is moved horizontally until the peripheral end surface of the substrate W contacts the two stopper surfaces 47. Accordingly, the center of the substrate W is disposed on the rotation center L1 of the spin chuck 3. Then, after the pressing block 43 is returned to the non-contact position, the plurality of support pins 9 are raised to the support position. The substrate W supported by the two fixing pins 41 and the two stoppers 42 is supported by the plurality of support pins 9 in the process in which the plurality of support pins 9 are raised to the support position. Thus, the substrate W is supported by the plurality of support pins 9 in a state where the center of the substrate W is disposed on the rotation center L1 of the spin chuck 3.

FIG. 6 is a partial cross-sectional view of the nozzle 5 and related components in a state where the nozzle 5 is in the processing position. FIG. 7 is a view showing a part of the lower surface 5a of the nozzle 5 and the lower surface 26 of the blocking plate 4 when the nozzle 5 is in the processing position.
As described above, each nozzle 5 is formed in a cylindrical shape. Specifically, each nozzle 5 is formed such that the outer diameter of the lower end portion 49 of the nozzle 5 is smaller than the outer diameter of other portions. Each nozzle 5 includes a cylindrical main body portion 48 having a substantially constant outer diameter, and a cylindrical lower end portion 49 having an outer diameter smaller than the outer diameter of the main body portion 48. The lower end of the main body 48 and the upper end of the lower end 49 are connected coaxially. Each nozzle 5 has a cylindrical outer peripheral surface 5b that is bent stepwise so that the outer diameter of the lower end portion is relatively small. Each nozzle insertion hole 29 has an inner wall surface 51 formed in a cylindrical shape corresponding to the outer peripheral surface 5 b of the nozzle 5. That is, each nozzle insertion hole 29 has a cylindrical inner wall surface 51 that is bent stepwise so that the outer diameter of the lower end portion is relatively small. The inner wall surface 51 of each nozzle insertion hole 29 includes a cylindrical large diameter portion 51a having a substantially constant diameter, a cylindrical small diameter portion 51b having a smaller diameter than the large diameter portion 51a, and a lower end of the large diameter portion 51a. And an annular connecting part 51c that connects the upper end of the small diameter part 51b over the entire circumference.

  When each nozzle 5 is disposed at the processing position, the inner wall surface 51 of each nozzle insertion hole 29 is close to the outer peripheral surface 5b of the nozzle 5 at any location. Further, at this time, a cylindrical minute gap G1 bent in a step shape so that the outer diameter of the lower end portion is relatively small is formed between the inner wall surface 51 of each nozzle insertion hole 29 and the outer peripheral surface 5b of the nozzle 5 corresponding thereto. It is formed between. That is, the large diameter part 51 a and the small diameter part 51 b of each nozzle insertion hole 29 surround the main part 48 and the lower end part 49 of the corresponding nozzle 5, respectively. Further, the inner peripheral portion of the connecting portion 51 c of each nozzle insertion hole 29 faces the outer peripheral portion of the lower surface 50 of the corresponding main body portion 48. The gap between each small diameter portion 51b and the corresponding lower end portion 49 of the nozzle 5 and the gap between each coupling portion 51c and the corresponding lower surface 50 of the main body portion 48 are, for example, the main body of the nozzle 5 corresponding to each large diameter portion 51a. It is smaller than the gap with the part 48. The fluid that has entered the minute gap G1 from below is decelerated by the lower end portion of the minute gap G1 that is bent in a step shape, and is retained at or near the lower end portion of the minute gap G1. In this way, a part of each nozzle 5 and a part of the inner wall surface 51 of the corresponding nozzle insertion hole 29 are sealed in a non-contact manner. That is, in this embodiment, the non-contact including the lower end portion of the inner wall surface 51 of each nozzle insertion hole 29 (the lower end portion of the large diameter portion 51a, the small diameter portion 51b, and the connecting portion 51c) and the corresponding lower end portion 49 of the nozzle 5 is provided. A seal structure is provided.

  Each nozzle 5 includes a plurality of processing liquid flow paths and a plurality of processing liquid discharge ports. As shown in FIG. 6, the plurality of treatment liquid channels are a first chemical liquid channel 52, a first rinse liquid channel 53, a second chemical liquid channel 54, which are provided independently inside the nozzle 5. And a second rinse liquid channel 55. The plurality of treatment liquid discharge ports include two pairs of chemical solution discharge ports and a rinse liquid discharge port. One pair of the chemical liquid discharge port and the rinse liquid discharge port is a first chemical liquid discharge port 56a (discharge port, chemical liquid discharge port) and a first rinse liquid discharge port 56b (discharge port, rinse liquid discharge port), and the other The pair of chemical liquid discharge port and rinse liquid discharge port are a second chemical liquid discharge port 57a (discharge port, chemical liquid discharge port) and a second rinse liquid discharge port 57b (discharge port, rinse liquid discharge port). The first chemical liquid flow channel 52, the first rinse liquid flow channel 53, the second chemical liquid flow channel 54, and the second rinse liquid flow channel 55 are respectively a first chemical liquid discharge port 56a, a first rinse liquid discharge port 56b, The two chemical liquid discharge ports 57a and the second rinse liquid discharge port 57b are connected. Each of the flow paths 52 to 55 is configured such that the processing liquid is discharged, for example, directly below from the corresponding discharge ports 56a, 56b, 57a, and 57b.

  Moreover, as shown in FIG. 7, each nozzle 5 has a circular lower surface 5a. Four discharge ports (a first chemical solution discharge port 56a, a first rinse solution discharge port 56b, a second chemical solution discharge port 57a, and a second rinse solution discharge port 57b) of each nozzle 5 are respectively provided on the lower surface 5a of the nozzle 5. It is arrange | positioned at the peripheral part. The four discharge ports of each nozzle 5 are arranged on a circle having a center on the central axis L2 on the lower surface 5a of the nozzle 5 (a plane orthogonal to the central axis L2). The four discharge ports of each nozzle 5 are arranged in the order of the first rinse liquid discharge port 56b, the first chemical liquid discharge port 56a, the second chemical liquid discharge port 57a, and the second rinse liquid discharge port 57b. 5 rotation direction). The chemical liquid discharge port and the rinse liquid discharge port forming the pair are close to each other. Further, one pair of the chemical solution discharge port and the rinse liquid discharge port and the other pair of the chemical solution discharge port and the rinse liquid discharge port are arranged apart from each other in the circumferential direction D1 of the nozzle 5.

  Further, as shown in FIG. 6, the treatment liquid supply mechanism 6 includes a first chemical liquid supply pipe 58, a first rinse liquid supply pipe 59, a second chemical liquid supply pipe 60, a second rinse liquid supply pipe 61, A first chemical liquid valve 62, a first rinse liquid valve 63, and a second chemical liquid respectively interposed in the chemical liquid supply pipe 58, the first rinse liquid supply pipe 59, the second chemical liquid supply pipe 60, and the second rinse liquid supply pipe 61. A valve 64 and a second rinse liquid valve 65 are included. The first chemical liquid in the first chemical liquid supply pipe 58 is supplied to the first chemical liquid discharge port 56 a via the first chemical liquid flow path 52. Further, the second chemical liquid in the second chemical liquid supply pipe 60 is supplied to the second chemical liquid discharge port 57 a via the second chemical liquid flow channel 54. The first and second chemicals are different types of chemicals. Further, the rinse liquid flowing in the first rinse liquid supply pipe 59 is supplied to the first rinse liquid discharge port 56 b via the first rinse liquid flow path 53. Further, the rinse liquid flowing in the second rinse liquid supply pipe 61 is supplied to the second rinse liquid discharge port 57 b via the second rinse liquid flow channel 55. The supply of the processing liquid from the supply pipes 58 to 61 to the corresponding discharge ports 56a, 56b, 57a, and 57b is controlled by opening and closing the valves 62 to 65.

  Examples of the first chemical liquid and the second chemical liquid include an etching liquid, an inorganic chemical liquid, an organic chemical liquid, and a polymer removing liquid, respectively. Specifically, as the first chemical solution and the second chemical solution, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, aqueous hydrogen peroxide, phosphoric acid, acetic acid, organic acid (for example, citric acid, oxalic acid, etc.), A liquid containing at least one of an organic alkali (for example, TMAH: tetramethylammonium hydroxide, etc.), a surfactant, and a corrosion inhibitor can be exemplified. The rinse liquid supplied to the nozzle 5 includes pure water, carbonated water, electrolytic ion water, hydrogen water, ozone water, IPA (isopropyl alcohol), HFE (hydrofluoroether), and dilution concentrations (for example, 10 to 10). For example, a hydrochloric acid solution of about 100 ppm) can be exemplified.

  When the substrate W is rotated by the spin chuck 3 while discharging the processing liquid from any one of the discharge ports (any of the four discharge ports of each nozzle 5) in a state where each nozzle 5 is at the processing position, The processing liquid is supplied to the entire periphery of the upper surface periphery. At this time, the processing liquid supplied to the substrate W spreads outward by receiving the centrifugal force generated by the rotation of the substrate W. Therefore, when the processing liquid is discharged from the nozzles 5 toward the peripheral edge of the upper surface of the substrate W in the rotating state, the processing liquid supply position (position where the processing liquid is sprayed) to the substrate W and an annular region including the outside thereof ( A processing liquid is supplied to the processing area. Thereby, the upper surface peripheral part of the board | substrate W is processed.

  Further, when each nozzle 5 is rotated about the central axis L2, the four discharge ports of each nozzle 5 rotate about the central axis L2, and the distance from the rotation center L1 of the spin chuck 3 to each discharge port. Changes. Each discharge port of each nozzle 5 is moved between a position closest to the rotation center L1 of the spin chuck 3 (close position) and a position farthest from the rotation center L1 of the spin chuck 3 (separation position). The proximity position and the separation position of each discharge port of each nozzle 5 are positions that are 180 degrees out of phase around the central axis L2. The supply position of the processing liquid with respect to the peripheral edge of the upper surface of the substrate W is changed by the rotation of the nozzle 5 around the central axis L2. As a result, the width (processing width) of the annular processing region processed with the processing liquid at the peripheral edge of the upper surface of the substrate W is changed. The processing width is the shortest distance in the direction parallel to the substrate W from the inner peripheral edge of the annular processing region to the peripheral end surface of the substrate W.

FIG. 8 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 66 (rotation angle control device). The control device 66 operates the chuck rotating mechanism 10, the pin lifting mechanism 14, the blocking plate lifting mechanism 33, the blocking plate rotating mechanism 34, the nozzle rotating mechanism 35, the arm rotating mechanism 37, the arm lifting mechanism 38, the block moving mechanism 44, and the like. Control. The opening / closing of each valve provided in the substrate processing apparatus 1 is controlled by the control device 66.

FIG. 9 is a process diagram for explaining an example of processing of the substrate W by the substrate processing apparatus 1.
Hereinafter, an example of processing when processing a substrate W (semiconductor wafer) having a plurality of thin films formed on the surface will be described with reference to FIG. 1, FIG. 3, FIG. 6, and FIG. Specifically, an example of processing when the peripheral portion of the thin film formed on the surface of the substrate W is removed by etching and the back surface and the peripheral end surface of the substrate W are cleaned will be described.

  The unprocessed substrate W is carried into the processing chamber 2 by a transfer robot (not shown) in a state where the configuration in the processing chamber 2 such as the blocking plate 4 is disposed at each retreat position, and the surface thereof is, for example, 2 facing upward. Placed on the two fixing pins 41 and the two stoppers 42 (step S1). Then, the block moving mechanism 44 is controlled by the control device 66, and the pressing block 43 is horizontally moved toward the contact position. At this time, if the center of the substrate W is deviated from the rotation center L1 of the spin chuck 3, the substrate W is pushed horizontally in the process of moving the pressing block 43 to the contact position, and the peripheral end surface of the substrate W is moved. It abuts against the two stopper surfaces 47. Thereby, the center of the substrate W is disposed on the rotation center L1 of the spin chuck 3 (step S2).

  Next, the block moving mechanism 44 is controlled by the control device 66, and the pressing block 43 is horizontally moved toward the non-contact position. Thereafter, the pin lifting mechanism 14 is controlled by the controller 66, and the plurality of support pins 9 are raised to the support position (step S3). The substrate W supported by the two fixing pins 41 and the two stoppers 42 is supported by the plurality of support pins 9 in the process in which the plurality of support pins 9 are raised to the support position. Thus, the substrate W is supported by the plurality of support pins 9 in a state where the center of the substrate W is disposed on the rotation center L1 of the spin chuck 3.

  Next, the upper gas valve 32 is opened by the control device 66, and nitrogen gas is discharged downward from the plurality of gas discharge ports 27 formed on the lower surface 26 of the blocking plate 4 (step S4). Further, the control plate 66 controls the shield plate lifting mechanism 33, and the shield plate 4 is lowered from the retracted position to the close position (step S5). Thereby, nitrogen gas discharged from the plurality of gas discharge ports 27 is blown onto the upper surface of the substrate W held by the spin chuck 3, and the substrate W is pressed against each support pin 9. In this state, the chuck rotation mechanism 10 is controlled by the controller 66, and the driving force of the chuck rotation mechanism 10 is input to the rotation shaft 7 of the spin chuck 3. Thereby, the board | substrate W supported by the some support pin 9 rotates integrally with the some support pin 9 by the frictional force which arises between the some support pins 9 (step S6).

  Next, the blocking plate rotating mechanism 34 is controlled by the control device 66, and the blocking plate 4 is arranged at the nozzle insertion position (step S7). Then, the control device 66 controls the two arm rotation mechanisms 37 and the two arm lifting mechanisms 38, and each nozzle 5 is moved from the retracted position to the processing position through the intermediate position (step S8). Accordingly, the two nozzles 5 are inserted into the two nozzle insertion holes 29, respectively. The blocking plate 4 may be disposed at the nozzle insertion position after being disposed at the proximity position as in this processing example, or may be disposed at the nozzle insertion position before being disposed at the proximity position.

  Next, the peripheral edge of the upper surface of the substrate W is etched with a first chemical solution (etching solution) with a first processing width. Specifically, each nozzle rotation mechanism 35 is controlled by the control device 66, and each nozzle 5 is rotated around the central axis L2 so that the rotation angle of each nozzle 5 becomes the first processing angle (step S9). ). Each nozzle 5 may be rotated after being arranged at the processing position as in this processing example, or may be rotated before being arranged at the processing position. By setting the rotation angle of each nozzle 5 to the first processing angle, the first chemical liquid discharged from the first chemical liquid discharge port 56a is adjusted to be sprayed to a predetermined position on the peripheral edge of the upper surface of the substrate W. At this time, the rotation angle of each nozzle 5 is set so that the first rinse liquid discharge port 56b is positioned closer to the center side of the substrate W (the rotation center L1 side of the spin chuck 3) than the first chemical liquid discharge port 56a. ing.

  The control device 66 opens the first chemical solution valve 62 provided in each processing liquid supply mechanism 6 in a state where the rotation angle of each nozzle 5 is set to the first processing angle, and the upper surface of the substrate W in the rotating state. A 1st chemical | medical solution is discharged from each 1st chemical | medical solution discharge port 56a toward a peripheral part (step S10). As a result, the first chemical solution is supplied to the annular region (processing region) having the first processing width. When the thin film located on the outermost surface of the substrate W is a metal film, the first chemical liquid is, for example, hydrofluoric acid (mixed liquid of hydrofluoric acid and nitric acid). The peripheral edge of the thin film located on the outermost surface of the substrate W is etched by the first chemical solution and removed from the substrate W. In this way, the peripheral edge of the upper surface of the substrate W is processed with the first chemical solution. When a predetermined time elapses after the first chemical liquid is discharged, each first chemical liquid valve 62 is closed by the control device 66 and the discharge of the first chemical liquid is stopped.

  Next, the first chemical liquid adhering to the substrate W is washed away by the rinse liquid. Specifically, in a state where the rotation angle of the nozzle 5 is maintained at the first processing angle, the first rinsing liquid valve 63 provided in each processing liquid supply mechanism 6 is opened by the control device 66, and A rinse liquid (for example, pure water) is discharged from each first rinse liquid discharge port 56b toward the peripheral edge of the upper surface of the substrate W (step S11). At the first processing angle, the first rinse liquid discharge port 56b is disposed closer to the center of the substrate W than the first chemical liquid discharge port 56a. Accordingly, the rinsing liquid discharged from each first rinsing liquid discharge port 56b is sprayed toward the center side of the substrate W rather than the region where the first chemical liquid is supplied at the upper peripheral edge of the substrate W. Thereby, the rinsing liquid is supplied to the entire region to which the first chemical liquid is supplied, and the first chemical liquid adhering to the substrate W is washed away by the rinsing liquid. When a predetermined time elapses after the rinsing liquid is discharged, the first rinsing liquid valve 63 is closed by the controller 66, and the discharge of the rinsing liquid is stopped.

  Next, the peripheral edge of the upper surface of the substrate W is etched by the second chemical liquid (etching liquid) with the second processing width. Specifically, each nozzle rotation mechanism 35 is controlled by the controller 66, and each nozzle 5 is rotated around the central axis L2 so that the rotation angle of each nozzle 5 becomes the second processing angle (step S12). ). Each nozzle 5 may be rotated as in this processing example when the first and second processing widths are different, or when the first and second processing widths are equal, It does not have to be rotated. By setting the rotation angle of each nozzle 5 to the second processing angle, the second chemical liquid discharged from each second chemical liquid discharge port 57a is adjusted to be sprayed to a predetermined position on the peripheral edge of the upper surface of the substrate W. . At this time, the rotation angle of each nozzle 5 is set such that the second rinse liquid discharge port 57b is positioned closer to the center side of the substrate W (the rotation center L1 side of the spin chuck 3) than the second chemical liquid discharge port 57a. ing.

  The control device 66 opens the second chemical solution valve 64 provided in each processing liquid supply mechanism 6 in a state where the rotation angle of each nozzle 5 is set to the second processing angle, and the upper surface of the rotating substrate W. A 2nd chemical | medical solution is discharged from each 2nd chemical | medical solution discharge outlet 57a toward a peripheral part (step S13). As a result, the second chemical liquid is supplied to the annular region (processing region) having the second processing width. When the thin film formed under the thin film on the outermost surface of the substrate W is an oxide film, the second chemical liquid is, for example, dilute hydrofluoric acid (DHF). The peripheral portion of the thin film formed under the thin film on the outermost surface of the substrate W is etched from the second chemical solution and removed from the substrate W. In this way, the peripheral edge of the upper surface of the substrate W is processed with the second chemical solution. When a predetermined time elapses after the second chemical solution is discharged, each control device 66 closes each second chemical valve 64 and stops the discharge of the second chemical solution.

  Next, the second chemical liquid adhering to the substrate W is washed away by the rinse liquid. Specifically, in a state where the rotation angle of each nozzle 5 is maintained at the second processing angle, the second rinsing liquid valve 65 provided in each processing liquid supply mechanism 6 is opened by the control device 66 to rotate the nozzle 5. A rinsing liquid (for example, pure water) is discharged from each second rinsing liquid discharge port 57b toward the periphery of the upper surface of the substrate W (step S14). At the second processing angle, the second rinse liquid discharge port 57b is disposed closer to the center side of the substrate W than the second chemical liquid discharge port 57a. Accordingly, the rinsing liquid discharged from each second rinsing liquid discharge port 57b is sprayed to the center side of the substrate W rather than the region to which the second chemical liquid is supplied in the peripheral edge of the upper surface of the substrate W. Thereby, the rinsing liquid is supplied to the entire region to which the second chemical liquid is supplied, and the second chemical liquid adhering to the substrate W is washed away by the rinsing liquid. When a predetermined time elapses after the rinsing liquid is discharged, the second rinsing liquid valve 65 is closed by the control device 66, and the discharge of the rinsing liquid is stopped.

  Next, the back surface and the peripheral end surface of the substrate W are cleaned. Specifically, the control device 66 controls the two arm rotation mechanisms 37 and the two arm lifting mechanisms 38, and each nozzle 5 is moved to the retracted position (step S15). As a result, each nozzle 5 comes out of the nozzle insertion hole 29. Then, after each nozzle 5 has moved to the retracted position, the control plate 66 controls the shield plate rotation mechanism 34 so that the shield plate 4 is rotated in the same direction at the same rotational speed as the rotational speed of the substrate W, for example. (Step S16). Further, the lower gas valve 24 is opened by the control device 66, and nitrogen gas is discharged from the lower gas discharge port 17 formed at the center of the upper surface of the spin base 8. The control device 66 opens the lower chemical liquid valve 21 in a state in which nitrogen gas is discharged from the lower gas discharge port 17, and moves the chemical liquid from the discharge port 18 a of the lower surface nozzle 18 toward the center of the lower surface of the rotating substrate W. (Cleaning liquid) is discharged (step S17). In addition, the control device 66 controls the pin lifting mechanism 14 to alternately lift and lower the first support pin group 9a and the second support pin group 9b while discharging the chemical solution from the discharge port 18a of the lower surface nozzle 18.

  The chemical solution discharged from the discharge port 18a of the lower surface nozzle 18 is sprayed to the center of the lower surface of the substrate W, and then spreads outward along the lower surface of the substrate W under the centrifugal force due to the rotation of the substrate W. Then, the chemical solution that has reached the peripheral edge of the lower surface of the substrate W is shaken off around the substrate W. Further, a part of the chemical solution that has reached the peripheral edge of the lower surface of the substrate W is shaken off around the substrate W after reaching the peripheral end surface of the substrate W along the lower surface of the substrate W. Further, by alternately raising and lowering the first support pin group 9a and the second support pin group 9b, the support state of the substrate W is supported only by the first support pin group 9a, and the second support pin group It is switched alternately to the state supported only by 9b. That is, the first support pin group 9 a and the second support pin group 9 b are alternately separated from the lower surface of the substrate W. Therefore, the chemical solution that has reached the lower peripheral edge of the substrate W is also supplied to the portion where the support pins 9 are in contact with each other at the lower peripheral edge of the substrate W. In this way, the chemical solution is supplied to the entire lower surface of the substrate W and the entire peripheral end surface of the substrate W. Thereby, the back surface and peripheral end surface of the substrate W are cleaned. When a predetermined time elapses after the chemical liquid is discharged, the lower chemical liquid valve 21 is closed by the control device 66 and the discharge of the chemical liquid is stopped.

  Next, the chemical liquid (cleaning liquid) adhering to the substrate W is washed away with the rinse liquid. Specifically, the control device 66 opens the lower rinsing liquid valve 22 in a state where nitrogen gas is discharged from the lower gas discharge port 17, and the lower surface nozzle 18 toward the lower surface center portion of the rotating substrate W. A rinsing liquid (for example, pure water) is discharged from the discharge port 18a (step S18). Further, the control device 66 controls the pin lifting mechanism 14 to alternately lift and lower the first support pin group 9a and the second support pin group 9b while discharging the rinse liquid from the discharge port 18a of the lower surface nozzle 18. The rinse liquid discharged from the discharge port 18a of the lower surface nozzle 18 is supplied to the entire lower surface of the substrate W and the entire peripheral end surface of the substrate W, as in the case of the chemical liquid (cleaning liquid). Thereby, the chemical | medical solution adhering to the back surface and peripheral end surface of the board | substrate W is washed away by the rinse liquid. When a predetermined time elapses after the rinsing liquid is discharged, the lower rinsing liquid valve 22 is closed by the control device 66 and the discharge of the rinsing liquid is stopped.

  Next, a drying process (spin drying) for drying the substrate W is performed. Specifically, the control device 66 controls the chuck rotating mechanism 10 and the blocking plate rotating mechanism 34 in a state where nitrogen gas is discharged from the plurality of gas discharge ports 27 and the lower gas discharge ports 17, so that the substrate W Then, the blocking plate 4 is rotated at a high rotation speed (for example, several thousand rpm) (step S19). Thereby, a large centrifugal force acts on the processing liquid adhering to the substrate W, and the processing liquid is shaken off around the substrate W. In this way, the processing liquid is removed from the substrate W, and the substrate W is dried. After the drying process is performed for a predetermined time, the controller 66 controls the chuck rotating mechanism 10 and the blocking plate rotating mechanism 34 to stop the rotation of the substrate W and the blocking plate 4 (step S20). Further, the controller 66 controls the shield plate lifting mechanism 33, and the shield plate 4 is raised toward the retracted position (step S21). Further, the upper gas valve 32 and the lower gas valve 24 are closed by the control device 66, and the discharge of nitrogen gas from the plurality of gas discharge ports 27 and the lower gas discharge port 17 is stopped (step S22). Thereafter, the processed substrate W is unloaded from the processing chamber 2 by the transfer robot (step S23).

  As described above, in this embodiment, each nozzle 5 is in a state where the lower surface 26 of the blocking plate 4 is brought close to the upper surface of the substrate W held by the spin chuck 3 and each nozzle 5 is inserted into the nozzle insertion hole 29. Is discharged toward the peripheral edge of the upper surface of the rotating substrate W. The supply position of the processing liquid with respect to the substrate W is moved along the peripheral edge of the upper surface of the substrate W by the rotation of the substrate W. Accordingly, the processing liquid is supplied to the annular region (processing region) including the position where the processing liquid is supplied to the substrate W and the region outside thereof. As a result, the peripheral edge of the upper surface of the substrate W is processed in a state where the upper surface of the substrate W is covered by the lower surface 26 of the blocking plate 4. Accordingly, the peripheral edge of the upper surface of the substrate W is processed in a state where the upper surface of the substrate W is protected by the blocking plate 4.

  The adjustment of the processing width (the shortest distance in the direction parallel to the substrate W from the inner peripheral edge of the annular processing region to the peripheral end surface of the substrate W) is performed by the rotation of the nozzle 5 around the central axis L2. Therefore, a large gap is not required between the nozzle 5 and the inner wall surface 51 of the nozzle insertion hole 29 unlike the conventional configuration in which the processing width is adjusted by the movement of the nozzle in the nozzle insertion hole. Thereby, the turbulence of the airflow between the substrate W and the blocking plate 4 is suppressed. Accordingly, the entry of the mist of the processing liquid into the nozzle insertion hole 29 is suppressed. Further, the processing width depends on the rotation angle of the nozzle 5 around the central axis L2. Therefore, a mechanism (nozzle rotation mechanism 35) for adjusting the processing width is simplified and miniaturized as compared with the conventional configuration in which the processing width is adjusted by moving the nozzle in the nozzle insertion hole. That is, the processing width can be accurately adjusted with a simple configuration. Thereby, the cost of the substrate processing apparatus 1 is reduced.

  In the present embodiment, a plurality of types of processing liquids including a chemical liquid and a rinsing liquid are supplied to each nozzle 5. As a result, a plurality of types of processing liquids including the chemical liquid and the rinsing liquid are supplied to the four discharge ports (first chemical liquid discharge port 56a, first rinse liquid discharge port 56b, second chemical liquid discharge port 57a, and second of each nozzle 5). It is discharged from the rinse liquid discharge port 57b) and supplied to the peripheral edge of the upper surface of the substrate W. Further, by controlling each nozzle rotating mechanism 35 by the controller 66, the rotation angle of each nozzle 5 around the central axis L2 is supplied to the center side of the substrate W from the supply position of the chemical solution to the substrate W. To be set. Accordingly, the rinsing liquid is supplied to the substrate W after the chemical liquid is supplied to the substrate W, whereby the rinsing liquid is supplied to all regions (a part of the upper surface of the substrate W) to which the chemical liquid is supplied. Thereby, the chemical | medical solution adhering to the board | substrate W is wash | cleaned reliably by the rinse liquid.

  In the present embodiment, the four discharge ports of each nozzle 5 are arranged in the rotation direction of the nozzle 5. That is, the four discharge ports of each nozzle 5 are arranged on the circumference having the center on the central axis L2 on the lower surface 5a of the nozzle 5 (a plane orthogonal to the central axis L2). Therefore, in each nozzle 5, the position where each discharge port is closest to the center of the substrate W (proximity position) matches. Similarly, in each nozzle 5, the position (separation position) where each discharge port is farthest from the center of the substrate W coincides. Therefore, in both the chemical treatment and the rinse treatment, a wide and equal adjustment range (adjustment range of the treatment width) is ensured. Further, if the chemical liquid is discharged from the chemical liquid discharge ports 56a and 57a at a position other than the proximity position, the rinse liquid can be supplied to the center side of the substrate W from the supply position of the chemical liquid to the substrate W. Thereby, the rinsing liquid is supplied to all the regions (a part of the upper surface of the substrate W) to which the chemical liquid is supplied, and the chemical liquid adhering to the substrate W is surely washed away by the rinsing liquid.

  In the present embodiment, a plurality of types of processing liquids including the first chemical liquid and the second chemical liquid are supplied to each nozzle 5. The first chemical liquid supplied to each nozzle 5 passes through the first chemical liquid flow path 52 and is supplied to the first chemical liquid discharge port 56a. Further, the second chemical liquid supplied to each nozzle 5 is supplied to the second chemical liquid discharge port 57 a through the second chemical liquid flow channel 54. Since the first chemical liquid flow path 52 and the second chemical liquid flow path 54 of each nozzle 5 are provided independently of each other, the first chemical liquid and the second chemical liquid supplied to each nozzle 5 are mixed in the nozzle 5. It does n’t fit. Therefore, when the type of the chemical solution is switched, for example, it is not necessary to clean the flow paths 52 and 54 for preventing mixing of different types of chemical solutions. Therefore, the type of the chemical solution can be switched without undergoing such processing. Thereby, the processing time when processing the board | substrate W using both the 1st chemical | medical solution and the 2nd chemical | medical solution is shortened.

  In the present embodiment, the space between the inner wall surface 51 of the nozzle insertion hole 29 and the nozzle 5 is sealed in the vicinity of the lower surface 26 of the blocking plate 4. Therefore, the entry of fluid into the minute gap G1 between the nozzle 5 and the nozzle insertion hole 29 is further suppressed. Thereby, the turbulence of the airflow between the substrate W and the blocking plate 4 is further suppressed. In addition, since the space between the inner wall surface 51 of the nozzle insertion hole 29 and the nozzle 5 is sealed without contact, when the nozzle 5 is rotated while being inserted into the nozzle insertion hole 29, The part does not slide on a part of the inner wall surface 51 of the nozzle insertion hole 29. Thereby, generation | occurrence | production of the foreign material (for example, particle) by sliding is prevented. Further, since a portion between the inner wall surface 51 of the nozzle insertion hole 29 and a portion of the nozzle 5 is sealed in the vicinity of the lower surface 26 of the blocking plate 4, portions other than the portion to be sealed are highly dimensional accurate. It may not be processed. Thereby, the manufacturing cost of the nozzle insertion hole 29 and the nozzle 5 is reduced.

  In the present embodiment, each nozzle 5 has a cylindrical shape and is rotated around the central axis L2. The processing liquid supplied to each nozzle 5 is discharged from four discharge ports formed in the lower surface 5 a of the nozzle 5 in a state where the nozzle 5 is inserted into the nozzle insertion hole 29. In a state where each nozzle 5 is inserted into the nozzle insertion hole 29, the inner wall surface 51 of the nozzle insertion hole 29 is close to the outer peripheral surface 5 b of the nozzle 5, and therefore a minute gap G 1 between the nozzle 5 and the nozzle insertion hole 29. The fluid is further prevented from entering. Further, since each nozzle 5 is cylindrical and is rotated around the central axis L2, the size of the minute gap G1 between the nozzle 5 and the nozzle insertion hole 29 hardly changes even when each nozzle 5 is rotated. Therefore, the turbulence of the airflow is suppressed regardless of the value of the rotation angle of each nozzle 5 around the central axis L2.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the claims. For example, in the above-described embodiment, the case where each nozzle 5 is cylindrical has been described. However, the shape of each nozzle 5 is not limited to a cylindrical shape, and may be other shapes such as a prismatic shape. In this case, the shape of the inner wall surface 51 of each nozzle insertion hole 29 may be formed so that the minute gap G <b> 1 becomes smaller in accordance with the shape of the nozzle 5.

In the above-described embodiment, the case where two nozzles 5 are provided has been described. However, the number of nozzles 5 may be one or three or more. One or three or more nozzle insertion holes 29 may be provided in accordance with the number of nozzles 5.
Further, in the above-described embodiment, two pairs of the chemical liquid discharge port and the rinse liquid discharge port are formed in each nozzle 5, and one pair and the other pair are arranged apart from each other in the circumferential direction D <b> 1 of the nozzle 5. Explained the case. However, as in the nozzle 205 (columnar nozzle) shown in FIG. 10, for example, there are four discharge ports (first chemical liquid discharge port 256a (discharge port, chemical liquid discharge port), first rinse liquid discharge port 256b (discharge, rinse liquid). Discharge port), second chemical liquid discharge port 257a (discharge port, chemical liquid discharge port) and second rinse liquid discharge port 257b (discharge, rinse liquid discharge port)) are continuously (closed) in the circumferential direction of the nozzle 205. It may be arranged in D1. The configuration of the nozzle 205 is the same as that of the nozzle 5 described above except for the positions of the four discharge ports. When nozzles 205 are used when processing liquid is discharged from a plurality of discharge ports and the substrate W is processed with a plurality of processing widths, the processing width is reduced with a smaller amount of rotation as a whole than when the nozzle 5 is used. Is adjusted. Therefore, the time required for adjusting the processing width is shortened. Thereby, the processing time of the substrate W is shortened.

  Further, in the above-described embodiment, the case where two chemical liquid discharge ports and two rinse liquid discharge ports are formed in each nozzle 5 has been described. However, the number of the chemical solution discharge ports may be one or three or more. Similarly, the number of rinse liquid discharge ports may be one, or may be three or more. Further, the number of chemical solution discharge ports may be different from the number of rinse solution discharge ports. Specifically, referring to FIG. 7, for example, the first rinse liquid discharge port 56b or the second rinse liquid discharge port 57b may not be provided.

  In the above-described embodiment, the case where the chemical liquid and the rinsing liquid are discharged from different discharge ports in each nozzle 5 has been described. That is, the case where each nozzle 5 is provided with a dedicated discharge port for discharging the chemical liquid and a dedicated discharge port for discharging the rinse liquid has been described. However, each nozzle 5 may be configured such that the chemical liquid and the rinse liquid are discharged from the same discharge port.

  Specifically, for example, one treatment liquid discharge port 367 (discharge port) may be formed on the lower surface 5a of the nozzle 305 as in a nozzle 305 (columnar nozzle) shown in FIG. Although not shown, the nozzle 305 has a processing liquid flow path connected to the processing liquid discharge port 367. In addition, the processing liquid supply mechanism 306 includes a chemical liquid supply pipe 369 and a rinse liquid supply pipe 370 connected to the processing liquid flow path, and a chemical liquid valve 371 and a rinse that are interposed in the chemical liquid supply pipe 369 and the rinse liquid supply pipe 370, respectively. A liquid valve 372. The chemical liquid and the rinse liquid supplied to the nozzle 305 from the chemical liquid supply pipe 369 and the rinse liquid supply pipe 370 are selectively discharged from the processing liquid discharge port 367. The configuration of the nozzle 305 is the same as that of the nozzle 5 described above except for the processing liquid discharge port 367 and the processing liquid flow path. In this nozzle 305, an area where one discharge port can be formed only needs to be ensured in the peripheral portion of the lower surface 5a of the nozzle 305. Therefore, compared to the nozzles 5 and 205 described above in which a plurality of discharge ports are formed, The outer diameter of the nozzle can be reduced. Thereby, the opening (opening formed by the nozzle insertion hole 29) formed in the lower surface 26 of the blocking plate 4 can be reduced, and the turbulence of the airflow between the substrate W and the blocking plate 4 can be further suppressed.

  Further, in the above-described embodiment, the cylindrical minute gap G1 bent in a step shape so that the outer diameter of the lower end portion is relatively small is the outer periphery of the nozzle 5 corresponding to the inner wall surface 51 of each nozzle insertion hole 29. The case where it is formed between the surfaces 5b has been described. However, the minute gap G1 may be formed in a cylindrical shape without a bent portion, for example. Specifically, the inner wall surface 51 of each nozzle insertion hole 29 and the outer peripheral surface 5b of each nozzle 5 may be formed in a cylindrical surface.

  Also, as shown in FIG. 12, a cylindrical minute gap G <b> 2 whose lower end portion is formed in a maze shape is an outer peripheral surface 405 b of a nozzle 405 (columnar nozzle) corresponding to the inner wall surface 451 of each nozzle insertion hole 429. May be formed between. Specifically, an annular recess 473 surrounding the central axis L <b> 2 may be formed in the annular part 50 of each nozzle 405. Further, an annular convex portion 474 surrounding the central axis of the nozzle insertion hole 429 may be formed in the connecting portion 51 c of each nozzle insertion hole 429. Each convex portion 474 may be configured to enter the concave portion 473 in a non-contact state with each nozzle 405 in the processing position. The fluid that has entered the minute gap G2 from below is decelerated by the lower end portion of the minute gap G2 formed in a labyrinth and is held at or near the lower end portion of the minute gap G2. That is, the lower end portion (the lower end portion of the large diameter portion 51a, the small diameter portion 51b, the connecting portion 51c, and the convex portion 474) of the inner wall surface 451 of each nozzle insertion hole 429, and the corresponding lower end portion 49 and concave portion 473 of the nozzle 405 are formed. A labyrinth seal (non-contact seal structure) is provided.

  In the above-described embodiment, the case where each nozzle rotation mechanism 35 includes an actuator such as a motor has been described. However, each nozzle rotation mechanism 35 may further include a transmission mechanism that transmits the driving force of the actuator to the nozzle 5 in addition to the actuator. Specifically, for example, as shown in FIG. 13, the nozzle rotation mechanism 535 may include an actuator 575, a transmission mechanism 579 having a drive member 576, a driven member 577, and a transmission member 578. The drive member 576 and the driven member 577 are connected to the actuator 575 and the nozzle 5, respectively. The drive member 576 may be built in the actuator 575 as shown in FIG. 13 or may be disposed outside the actuator 575. The driving force of the actuator 575 is input to the driving member 576. The transmission member 578 is configured to transmit the driving force input to the driving member 576 to the driven member 577. An example of the transmission mechanism 579 is a pulley / belt mechanism.

  In the above-described embodiment, the case where each nozzle 5 is provided independently of the blocking plate 4 has been described. However, as in the substrate processing apparatus 601 shown in FIG. 14, the nozzle 5 may be connected to the blocking plate arm 680 connected to the support shaft 25. Similarly, the nozzle 5 may be connected to a blocking plate arm 680 connected to the support shaft 25 as in the substrate processing apparatus 701 shown in FIG.

  In the substrate processing apparatus 601 shown in FIG. 14, a housing 681 is connected to the upper end portion of the nozzle 5. The nozzle rotating mechanism 635 and the nozzle lifting / lowering mechanism 682 are accommodated in the housing 681. The nozzle rotation mechanism 635 is configured to rotate the nozzle 5 around the central axis of the nozzle 5. The nozzle lifting mechanism 682 is configured to lift and lower the nozzle 5 in the vertical direction. The nozzle rotation mechanism 635 includes, for example, a motor. Moreover, the nozzle raising / lowering mechanism 682 contains fluid apparatuses, such as an air cylinder, for example. The housing 681 is supported by the blocking plate arm 680 via the nozzle arm 636.

  In the substrate processing apparatus 701 shown in FIG. 15, a housing 681 is connected to the upper end of the nozzle 5. The nozzle rotation mechanism 635 is accommodated in the housing 681. The nozzle lifting mechanism 782 is connected to the blocking plate arm 680. The housing 681 is supported by the blocking plate arm 680 via the nozzle arm 636 and the nozzle lifting mechanism 682. The nozzle raising / lowering mechanism 782 is configured to integrally raise and lower the nozzle 5, the housing 681, the nozzle rotating mechanism 635, and the nozzle arm 636 in the vertical direction. The nozzle lifting mechanism 782 includes a fluid device such as an air cylinder, for example.

  In the above-described embodiment, the case where the processing liquid ejected from the nozzle 5 is sprayed perpendicularly to the peripheral edge of the upper surface of the substrate W has been described. However, as shown in FIG. 16, the nozzle 805 may be configured such that the treatment liquid is sprayed obliquely in the direction away from the center of the substrate W with respect to the peripheral edge of the upper surface of the substrate W. The nozzle insertion hole 829 may be configured such that the nozzle 805 is inserted obliquely with respect to the vertical direction. In this case, the processing liquid sprayed on the substrate W spreads outward along the upper surface of the substrate W. Accordingly, the processing liquid ejected from the nozzle 805 is supplied to an annular region (processing region) including the processing liquid supply position with respect to the substrate W and a region outside the processing liquid.

  In the above-described embodiment, the case where the substrate W to be processed is a semiconductor wafer has been described. However, the substrate W to be processed is not limited to a semiconductor wafer, but a liquid crystal display substrate, a plasma display substrate, an FED substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate. It may be. In other words, the substrate W to be processed may be a circular substrate such as a semiconductor wafer or a polygonal substrate such as a liquid crystal display device substrate.

  When the substrate W to be processed is a rectangular substrate, for example, as shown in FIG. 17, the substrate processing apparatus 901 moves the upper peripheral edge of the substrate W and the nozzle 5 linearly relative to each other to move relative to the substrate W. It is preferable that the supply position of the processing liquid is configured to move along the peripheral edge of the upper surface of the substrate W. Further, the blocking plate 904 (opposing member) provided in the substrate processing apparatus 901 always covers the entire upper surface of the substrate W when the processing liquid discharged from the nozzle 5 is supplied to the peripheral edge of the upper surface of the substrate W. It may be formed in a size that covers, or may be formed in a size that covers at least part of the upper surface of the substrate W. Further, the nozzle 5 provided in the substrate processing apparatus 901 sprays the processing liquid obliquely in a direction away from the center of the substrate W with respect to the peripheral edge of the upper surface of the substrate W, like a nozzle 805 shown in FIG. It is preferable that it is comprised. In this case, the processing liquid is supplied to the annular region (processing region) including the processing liquid supply position with respect to the substrate W and the region outside the substrate W without rotating the substrate W around a predetermined axis passing through the substrate W.

  In addition, various design changes can be made within the scope of matters described in the claims.

1. Substrate processing apparatus 3. Spin chuck (substrate holding mechanism)
5 nozzle (cylindrical nozzle)
5a The lower surface (end surface) of the nozzle
4 Blocking plate (opposing member)
6 Treatment liquid supply mechanism 10 Chuck rotation mechanism (relative movement mechanism)
26 Lower surface of the barrier plate (opposite surface)
29 Nozzle insertion hole 35 Nozzle rotation mechanism 51 Inner wall surface 52 First chemical liquid flow path 54 Second chemical liquid flow path 56a First chemical liquid discharge port (discharge port, chemical liquid discharge port)
56b First rinse liquid discharge port (discharge port, rinse liquid discharge port)
57a Second chemical solution discharge port (discharge port, chemical solution discharge port)
57b Second rinse liquid discharge port (discharge port, rinse liquid discharge port)
66 Control device (rotation angle control device)
205 nozzles (columnar nozzles)
256a First chemical liquid discharge port (discharge port, chemical liquid discharge port)
256b First rinse liquid discharge port (discharge port, rinse liquid discharge port)
257a Second chemical solution discharge port (discharge port, chemical solution discharge port)
257b Second rinse liquid discharge port (discharge port, rinse liquid discharge port)
305 nozzle (cylindrical nozzle)
306 Treatment liquid supply mechanism 367 Treatment liquid discharge port (discharge port)
405 nozzle (cylindrical nozzle)
429 Nozzle insertion hole 451 Inner wall surface 535 Nozzle rotation mechanism 601 Substrate processing apparatus 635 Nozzle rotation mechanism 701 Substrate processing apparatus 805 Nozzle (columnar nozzle)
829 Nozzle insertion hole 901 Substrate processing apparatus 904 Blocking plate (opposing member)
D1 Nozzle circumferential direction (rotational direction)
L2 Center axis (Rotation axis)
W substrate

Claims (7)

A substrate holding mechanism for holding the substrate;
The rotation axis line is arranged at a position away from a straight line orthogonal to the center of the main surface of the substrate held by the substrate holding mechanism and is capable of rotating about a predetermined rotation axis passing through the main surface of the substrate. A nozzle that discharges the processing liquid toward a part of the peripheral edge of the main surface of the substrate held by the substrate holding mechanism;
A relative movement mechanism for relatively moving the substrate held by the substrate holding mechanism and the nozzle so that the supply position of the processing liquid to the substrate moves along the peripheral edge of the main surface of the substrate;
A nozzle rotation mechanism for rotating the nozzle around the rotation axis;
A treatment liquid supply mechanism for supplying a treatment liquid to the nozzle;
By causing the nozzle rotation mechanism to change the rotation angle of the nozzle, the processing width of the annular processing region to which the processing liquid discharged from the nozzle is supplied, that is, from the inner periphery of the annular processing region to the peripheral end surface of the substrate And a rotation angle control device for adjusting the shortest distance in a direction parallel to the substrate up to.   The substrate processing apparatus according to claim 1, wherein the rotation axis is a vertical axis passing through a main surface of the substrate held by the substrate holding mechanism.   The substrate processing apparatus according to claim 1, wherein the nozzle has a central axis positioned on the rotation axis and an end surface on which the discharge port is formed.   The said nozzle is formed so that a process liquid may be discharged below from the said discharge port toward the peripheral part of the main surface of the board | substrate hold | maintained at the said board | substrate holding mechanism. The substrate processing apparatus according to item. The treatment liquid supply mechanism is configured to supply a plurality of types of treatment liquids including a first chemical liquid and a second chemical liquid to the nozzle,
The discharge port includes a first chemical solution discharge port for discharging the first chemical solution and a second chemical solution discharge port for discharging the second chemical solution,
The nozzle is connected to the first chemical liquid discharge port and the second chemical liquid flow path connected to the second chemical liquid discharge port and provided independently of the first chemical liquid flow path. The substrate processing apparatus as described in any one of Claims 1-4 containing these. The treatment liquid supply mechanism is configured to supply a plurality of kinds of treatment liquids including a chemical liquid and a rinse liquid to the nozzle,
The rotation angle control device controls the nozzle rotation mechanism to control the rotation angle of the nozzle so that the rinsing liquid is supplied to the center side of the substrate from the supply position of the chemical solution to the substrate. The substrate processing apparatus as described in any one of -5.   The substrate processing apparatus according to claim 1, wherein the discharge port includes a chemical solution discharge port and a rinse solution discharge port arranged in a rotation direction of the nozzle.

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