JP2016167582A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus, which can dry an upper surface of a substrate while suppressing or preventing the particles.SOLUTION: A rinse liquid film 44 is formed covering an entire region of an upper surface of a substrate W. A mixed gas (IPA Vapor+N) is discharged downward from a first discharge port 35 of a gas nozzle 27. This forms a liquid film removal region 45 in the rinse liquid film 44. Before the mixed gas is discharged from the first discharge port 35, a mixed gas (IPA Vapor+N) is discharged radially and horizontally from a second discharge port 39, which is annular, of the gas nozzle 27.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for processing a top surface of a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device, a processing liquid is supplied to the surface of a substrate such as a semiconductor wafer, and the surface of the substrate is processed using the processing liquid.
For example, a single-wafer type substrate processing apparatus that processes substrates one by one, a spin chuck that rotates the substrate while holding the substrate substantially horizontal, and a processing liquid on the upper surface of the substrate that is rotated by the spin chuck. And a nozzle for supplying. For example, the chemical liquid is supplied to the substrate held by the spin chuck, and then the rinse liquid is supplied, whereby the chemical liquid on the substrate is replaced with the rinse liquid. Thereafter, a drying process for removing the rinse liquid from the upper surface of the substrate is performed.

  As a drying process, a technique of supplying isopropyl alcohol (IPA) vapor having a lower boiling point than water to the surface of a substrate in a rotating state is known in order to suppress the generation of watermarks. For example, rotagoni drying (see Patent Document 1) is an example of this method.

JP 2013-131783 A

As such a drying method, specifically, a liquid film of a treatment liquid (rinse liquid) is formed on the upper surface of the substrate, and a low surface tension liquid (IPA) vapor is sprayed on the liquid film of the treatment liquid, A liquid film removal region is formed. Then, the upper surface of the substrate is dried by expanding the liquid film removal region and expanding the liquid film removal region over the entire upper surface of the substrate.
However, in such a drying method, particles may be generated on the surface (surface to be processed) of the substrate after drying.

  Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of drying the upper surface of a substrate while suppressing or preventing particles.

  The inventor of the present application considers that the cause of particle generation in the drying method (rotagony drying or the like) using the vapor of the low surface tension liquid is as follows. That is, as a result of processing using the processing liquid, particles may be included in the liquid film of the processing liquid formed on the upper surface of the substrate. When the liquid film removal area is expanded, the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase (the boundary including the gas-liquid solid three-phase interface) faces outward (that is, the liquid film side of the processing liquid). Moving. Along with the expansion of the liquid film removal region, particles are included in a portion near the boundary of the liquid film of the processing liquid (referred to as “the boundary portion of the liquid film of the processing liquid”, hereinafter the same in this section). .

  Thermal convection is generated inside the boundary of the liquid film of the processing liquid. This thermal convection flows in a direction approaching the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase. Therefore, if particles are included in the boundary of the liquid film of the processing liquid, the particles are urged in the direction toward the boundary between the upper surface of the substrate and the gas phase by thermal convection, and from the boundary to the liquid film removal region. It moves and appears on the top surface of the substrate. Then, particles remain on the upper surface of the substrate after the liquid film of the processing liquid is removed. The present inventors consider that this is the mechanism of particle generation.

  In addition, the inventors of the present application are in a state where the atmosphere around the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase is rich in the vapor of the low surface tension liquid having a lower surface tension than the processing liquid. If this is the case, thermal convection does not occur inside the boundary of the liquid film of the processing liquid, and in addition, the liquid film of the processing liquid, the upper surface of the substrate, the gas phase, It has been found that Marangoni convection flows in a direction away from the boundary (ie, opposite to thermal convection).

  The invention according to claim 1 for achieving the above object includes a substrate holding step for horizontally holding the substrate, and a processing liquid that covers the upper surface of the substrate by supplying the processing liquid to the upper surface of the substrate. A liquid film forming step for forming a film, and after the liquid film forming step, in order to form a liquid film removal region in which the liquid film is removed from the liquid film of the processing liquid, a surface tension lower than that of the processing liquid is used. A first gas containing a low surface tension liquid vapor is discharged from a first discharge port, and the first gas is blown onto the liquid film of the processing liquid from a direction intersecting the upper surface. A second gas containing a vapor of a low surface tension liquid having a surface tension lower than that of the treatment liquid is discharged laterally and radially from an annular second discharge port different from the first discharge port. Second gas discharge step for discharging, and liquid film removal for expanding the liquid film removal region And a band expansion step, to provide a substrate processing method.

  According to this method, the first gas containing the vapor of the low surface tension liquid is blown from the direction intersecting the upper surface of the substrate onto the liquid film of the processing solution formed on the upper surface of the substrate, thereby A liquid film removal region is formed in the film. By expanding the liquid film removal region, the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase moves toward the outside of the substrate. By expanding the liquid film removal region over the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

  Further, the second gas containing the vapor of the low surface tension liquid is discharged laterally and radially from the annular second discharge port. The second gas discharged from the second discharge port is supplied around the liquid film of the processing liquid formed on the upper surface of the substrate. Therefore, the atmosphere around the liquid film of the treatment liquid can be kept in a rich state of low surface tension vapor. Therefore, after the formation of the liquid film removal region, the atmosphere around the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be maintained in a rich state of the low surface tension liquid vapor. As a result, Marangoni convection that flows in a direction away from the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid, and the generated Marangoni convection is generated. Can be maintained.

  Therefore, when particles are included in the liquid film of the processing liquid, the particles are urged away from the boundary between the upper surface of the substrate and the gas phase by Marangoni convection. Therefore, the liquid film removal region can be expanded while the particles in the liquid film of the processing liquid are taken into the liquid film. Particles contained in the liquid film of the processing liquid are removed from the upper surface of the substrate together with the liquid film of the processing liquid without appearing in the liquid film removal region. Therefore, no particles remain on the upper surface of the substrate after the substrate is dried. Accordingly, the entire upper surface of the substrate can be dried while suppressing or preventing the generation of particles.

Further, for example, it is conceivable to spray the low surface tension liquid vapor onto the liquid film of the processing liquid while filling the entire interior of the chamber containing the substrate holding means with the atmosphere of the low surface tension liquid vapor. However, in this case, since it is necessary to fill the entire interior of the chamber with the low surface tension liquid vapor atmosphere, the consumption of the low surface tension liquid becomes enormous.
On the other hand, in the configuration of claim 1, the atmosphere around the boundary between the upper surface of the substrate, the liquid film of the processing liquid, and the gas phase is obtained by discharging the second gas from the second discharge port horizontally and radially. Can be kept rich in the vapor of the low surface tension liquid. Thereby, the upper surface of a board | substrate can be dried favorably, aiming at the liquid-saving of a low surface tension liquid.

The invention according to claim 2 is the substrate processing method according to claim 1, wherein the second discharge port is disposed above the first discharge port in the vertical direction.
According to this method, since the second discharge port is disposed above the first discharge port, the upper surface of the substrate and the processing liquid are caused by the flow of the second gas discharged from the second discharge port. It is also possible to block the periphery of the boundary between the liquid film and the gas phase from the region above the second discharge port. Thereby, the periphery of the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase can be maintained in a richer state of the vapor of the low surface tension liquid.

A third aspect of the present invention is the substrate processing method according to the first or second aspect, wherein the first gas discharge step and the second gas discharge step are executed in parallel.
According to this method, since the discharge of the first gas from the first discharge port and the discharge of the second gas from the second discharge port are performed in parallel, the liquid film removal region is expanded. In this case, the atmosphere around the boundary between the upper surface of the substrate, the liquid film of the processing liquid, and the gas phase can be kept in a rich state of the vapor of the low surface tension liquid. Thereby, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid.

The invention according to claim 4 is the substrate processing method according to any one of claims 1 to 3, wherein the second gas discharge step is started prior to the start of the first gas discharge step. It is.
According to this method, since the discharge of the second gas from the second discharge port is started prior to the start of the discharge of the first gas from the first discharge port, the atmosphere near the upper surface of the substrate is The formation of the liquid film removal region can be started in a rich state of the low surface tension liquid vapor.

  According to a fifth aspect of the present invention, in the liquid film removal region expanding step, the flow rate of the first gas discharged from the first discharge port is gradually increased after the start of discharge of the first gas. Including a first flow rate increasing step, wherein the substrate processing method gradually increases the flow rate of the second gas discharged from the second discharge port after the start of discharge of the second gas. The substrate processing method according to claim 1, further comprising two flow rate increasing steps.

  According to this method, the liquid film removal region can be expanded by gradually increasing the flow rate of the first gas after the start of the discharge of the first gas. At this time, the flow rate of the second gas is also gradually increased after the discharge of the second gas is started, so that the upper surface of the substrate, the liquid film of the processing liquid, and the gas phase are not affected by the expansion state of the liquid film removal region. The atmosphere around the boundary can be kept rich in the low surface tension liquid vapor.

Invention of Claim 6 is a substrate processing method as described in any one of Claims 1-5 in which the said process liquid contains a rinse liquid and the said low surface tension liquid contains an organic solvent.
According to this method, the first gas containing the vapor of the low surface tension liquid is blown onto the liquid film of the rinsing liquid formed on the upper surface of the substrate from the direction intersecting the upper surface of the substrate. A liquid film removal region is formed in the film. By expanding the liquid film removal region, the boundary between the upper surface of the substrate, the liquid film of the rinsing liquid, and the gas phase moves toward the outside of the substrate. By expanding the liquid film removal region over the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

  Further, the second gas containing the vapor of the low surface tension liquid is discharged laterally and radially from the annular second discharge port. The second gas discharged from the second discharge port is supplied around the rinsing liquid film formed on the upper surface of the substrate. Therefore, the atmosphere around the liquid film of the rinsing liquid can be maintained in a rich state of low surface tension vapor. Therefore, after the formation of the liquid film removal region, the atmosphere around the boundary between the upper surface of the substrate and the liquid film of the rinsing liquid and the gas phase can be maintained in a rich state of the low surface tension liquid vapor. As a result, Marangoni convection that flows in a direction away from the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase can be generated inside the boundary portion of the liquid film of the rinsing liquid, and the generated Marangoni convection is generated. Can be maintained.

  Therefore, when particles are contained in the liquid film of the rinsing liquid, the particles are urged away from the boundary between the upper surface of the substrate and the gas phase by Marangoni convection. Therefore, the liquid film removal region can be expanded while the particles in the liquid film of the rinsing liquid are taken into the liquid film. The particles contained in the rinsing liquid film are removed from the upper surface of the substrate together with the rinsing liquid film without appearing in the liquid film removal region. Therefore, no particles remain on the upper surface of the substrate after the substrate is dried. Accordingly, the entire upper surface of the substrate can be dried while suppressing or preventing the generation of particles.

  The invention described in claim 7 includes a substrate holding means for horizontally holding the substrate, a processing liquid supply means for supplying a processing liquid to the upper surface of the substrate, and a first discharge for discharging gas downward. A nozzle having an outlet and an annular second discharge port for discharging gas in a lateral direction, and a vapor of a low surface tension liquid having a lower surface tension than the processing liquid is included in the first discharge port. A first gas supply means for supplying a first gas; and a second gas for supplying a second gas containing a vapor of a low surface tension liquid having a surface tension lower than that of the processing liquid to the second discharge port. Gas supply means, substrate rotation means for rotating the substrate held by the substrate holding means, the process supply means, the first gas supply means, the second gas supply means, and the substrate rotation means. Control means, and the control means includes the base A liquid film is formed on the upper surface of the substrate to form a liquid film of the processing liquid covering the upper surface of the substrate, and the liquid film is removed from the liquid film of the processing liquid after the liquid film forming step. A first gas discharge step of discharging the first gas from the first discharge port and blowing the first gas onto the liquid film of the processing liquid to form a liquid film removal region. A substrate processing apparatus that executes a second gas discharge step of discharging the second gas laterally and radially from the second discharge port, and a liquid film removal region expansion step of expanding the liquid film removal region I will provide a.

According to this structure, there exists an effect equivalent to the effect of Claim 1.
The invention according to claim 8 is characterized in that the nozzle includes a first cylindrical body in which a first flow path for allowing the first gas to flow is formed, and the lower end portion of the cylindrical body allows the nozzle to A first discharge port is formed, and a flange is provided at a lower end portion of the first cylindrical body, and the first gas discharged from the first discharge port is discharged from the substrate. It is a substrate processing apparatus of Claim 6 which distribute | circulates the space between an upper surface and the said flange.

  According to this configuration, the first gas discharged from the first discharge port flows in the space between the upper surface of the substrate and the flange, and radially and between the outer peripheral end of the flange and the substrate. It is discharged sideways. Therefore, after the liquid film removal region is formed, the first gas from between the outer peripheral end of the flange and the substrate flows radially outward along the upper surface of the substrate. Thus, the first gas can be supplied around the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase, and the periphery of the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be supplied. , Can keep the low surface tension liquid vapor rich state.

The invention according to claim 9 is the substrate processing apparatus according to claim 8, wherein the second discharge port is disposed above the flange.
According to this configuration, the second discharge port is disposed above the flange. Therefore, the periphery of the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase is blocked from the region above the second discharge port by the flow of the second gas discharged from the second discharge port. It is also possible to do. Thereby, the periphery of the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase can be maintained in a richer state of the vapor of the low surface tension liquid.

According to a tenth aspect of the present invention, the nozzle is a second cylinder that surrounds the first cylinder, and the second cylinder in which the second gas flows is provided in the first cylinder. 10. The substrate processing apparatus according to claim 9, further comprising a second cylinder that is partitioned from the body, wherein the second discharge port is formed by the second cylinder and the flange. It is.
According to this configuration, since the second discharge port and the outer peripheral end of the flange and the substrate are arranged vertically, the second gas discharged from the second discharge port is transferred to the upper surface of the substrate. It is supplied around the boundary between the liquid film of the processing liquid and the gas phase. Thereby, the periphery of the boundary between the liquid film of the processing liquid, the upper surface of the substrate, and the gas phase can be kept in a richer state of the vapor of the low surface tension liquid.

The invention according to claim 11 further includes a facing member having a facing surface that faces the upper surface of the substrate and guides the second gas discharged from the second discharge port. It is a substrate processing apparatus as described in any one of these.
According to this configuration, the second gas discharged from the second discharge port is filled in the space between the facing surface and the upper surface of the substrate. Therefore, it is possible to suppress the second gas from flowing out from near the upper surface of the substrate. Thereby, the atmosphere around the boundary between the upper surface of the substrate, the liquid film of the processing liquid, and the gas phase can be kept in a richer state of the vapor of the low surface tension liquid.

According to a twelfth aspect of the present invention, the facing member is opposed to the peripheral edge of the upper surface of the substrate, and between the peripheral portion of the upper surface, between the central portion of the opposing surface and the central portion of the upper surface of the substrate. It is a substrate processing apparatus of Claim 11 which has the opposing peripheral part which forms a narrow space | interval narrower than a space | interval.
According to this configuration, since the narrow gap is formed between the opposing peripheral edge of the opposing member and the upper peripheral edge of the substrate, the second gas supplied to the space between the opposing surface and the upper surface of the substrate. However, it is difficult to be discharged from the space. Therefore, it is possible to further suppress the second gas from flowing out from near the upper surface of the substrate. As a result, the atmosphere around the boundary between the upper surface of the substrate, the liquid film of the processing liquid and the gas phase can be kept in an even richer state of the vapor of the low surface tension liquid.

It is the figure which looked at the substrate processing apparatus concerning a 1st embodiment of the present invention in the horizontal direction. The substrate processing apparatus of the steam nozzles provided in a cross-sectional view showing an enlarged state of ejecting a mixed gas (IPA Vapor + N _2). It is a flowchart for demonstrating the 1st process example of the process performed by the said substrate processing apparatus. It is an illustration for demonstrating the said 1st process example. FIG. 4D is an illustrative view for explaining a step following FIG. 4B. FIG. 4D is an illustrative view for explaining a step following FIG. 4D. And processing time is a graph showing the relationship between the discharge flow rate of the mixed gas (IPA Vapor + _{N 2)} from the first discharge port and the second outlet port. It is a top view which shows the state of the boundary part of the liquid film of a rinse liquid in the case where a liquid film removal area | region is expanded. It is an illustration for demonstrating the 2nd process example of the process performed by the said substrate processing apparatus. It is an illustration figure for demonstrating the structure of the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. It is an illustration figure for demonstrating the structure of the substrate processing apparatus which concerns on the 3rd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram of a substrate processing apparatus 1 according to a first embodiment of the present invention viewed in the horizontal direction.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one with a processing liquid or a processing gas. The substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W using a processing liquid, and a control device (control means) 3 that controls the operation of the apparatus provided in the substrate processing apparatus 1 and the opening / closing of a valve. .

Each processing unit 2 is a single-wafer type unit. Each processing unit 2 holds a box-shaped chamber 4 having an internal space and a single substrate W in the chamber 4 in a horizontal posture, and the substrate W around a vertical rotation axis A1 passing through the center of the substrate W. A spin chuck (substrate holding means) 5, a chemical solution supply unit 6 for supplying a chemical solution to the upper surface of the substrate W held by the spin chuck 5, and an upper surface of the substrate W held by the spin chuck 5 A rinsing liquid supply unit (processing liquid supply means) 7 for supplying a rinsing liquid to the substrate and an IPA vapor as an example of an organic solvent as a low surface tension liquid above the substrate W held by the spin chuck 5 And a gas supply unit (first gas supply means, second gas supply means) 8 for supplying a mixed gas (IPA Vapor + N ₂ ) with N ₂ gas as an example of an inert gas, And a cylindrical cup 9 surrounding the periphery of the pin chuck 5.

  The chamber 4 includes a box-shaped partition wall 10 that houses a spin chuck 5 and a nozzle, and an FFU (fan filter filter) as a blower unit that sends clean air (air filtered by a filter) into the partition wall 10 from above the partition wall 10. Unit) 11 and an exhaust duct 12 for discharging the gas in the chamber 4 from the lower part of the partition wall 10. The FFU 11 is disposed above the partition wall 10 and attached to the ceiling of the partition wall 10. The FFU 11 sends clean air downward from the ceiling of the partition wall 10 into the chamber 4. The exhaust duct 12 is connected to the bottom of the cup 9 and guides the gas in the chamber 4 toward an exhaust processing facility provided in a factory where the substrate processing apparatus 1 is installed. Therefore, a downflow (downflow) that flows downward in the chamber 4 is formed by the FFU 11 and the exhaust duct 12. The processing of the substrate W is performed in a state where a down flow is formed in the chamber 4.

As the spin chuck 5, a clamping chuck that holds the substrate W horizontally with the substrate W sandwiched in the horizontal direction is employed. Specifically, the spin chuck 5 includes a spin motor (substrate rotating means) 13, a spin shaft 14 integrated with a drive shaft of the spin motor 13, and a circle attached substantially horizontally to the upper end of the spin shaft 14. Plate-like spin base 15.
On the upper surface of the spin base 15, a plurality of (three or more, for example, six) clamping members 16 are arranged on the peripheral edge thereof. The plurality of clamping members 16 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 15.

Further, the spin chuck 5 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held on the spin chuck 5 may be employed.
The chemical liquid supply unit 6 includes a chemical liquid nozzle 17 for discharging a chemical liquid, a chemical liquid pipe 18 connected to the chemical liquid nozzle 17, a chemical liquid valve 19 interposed in the chemical liquid pipe 18, and a chemical liquid nozzle 17 attached to the tip. A first nozzle arm 20 and a first nozzle moving unit 21 that moves the chemical nozzle 17 by swinging the first nozzle arm 20 are included.

  When the chemical liquid valve 19 is opened, the chemical liquid supplied from the chemical liquid pipe 18 to the chemical liquid nozzle 17 is discharged downward from the chemical liquid nozzle 17. When the chemical liquid valve 19 is closed, the discharge of the chemical liquid from the chemical liquid nozzle 17 is stopped. The first nozzle moving unit 21 moves the chemical solution supply position within the upper surface of the substrate W by moving the chemical solution nozzle 17 along the upper surface of the substrate W. Further, the first nozzle moving unit 21 includes a processing position where the chemical liquid discharged from the chemical liquid nozzle 17 is supplied to the upper surface of the substrate W, and a retreat position where the chemical liquid nozzle 17 is retracted to the side of the spin chuck 5 in plan view. The chemical nozzle 17 is moved between

The chemical liquid discharged from the chemical nozzle 17 is sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: tetramethylammonium). Hydroxide, etc.), a surfactant, and a liquid containing at least one of a corrosion inhibitor can be exemplified.
The rinse liquid supply unit 7 includes a rinse liquid nozzle 22 that discharges water, a rinse liquid pipe 23 connected to the rinse liquid nozzle 22, a rinse liquid valve 24 interposed in the rinse liquid pipe 23, and a rinse liquid nozzle 22. Includes a second nozzle arm 25 attached to the tip, and a second nozzle moving unit 26 that moves the rinse liquid nozzle 22 by swinging the second nozzle arm 25.

  When the rinsing liquid valve 24 is opened, the water supplied from the rinsing liquid pipe 23 to the rinsing liquid nozzle 22 is discharged downward from the rinsing liquid nozzle 22. When the rinse liquid valve 24 is closed, the discharge of water from the rinse liquid nozzle 22 is stopped. The second nozzle moving unit 26 moves the water supply position within the upper surface of the substrate W by moving the rinse liquid nozzle 22 along the upper surface of the substrate W. Further, the second nozzle moving unit 26 has a processing position where the water discharged from the rinsing liquid nozzle 22 is supplied to the upper surface of the substrate W, and the rinsing liquid nozzle 22 is retracted to the side of the spin chuck 5 in plan view. The rinse liquid nozzle 22 is moved between the retracted position.

The rinse liquid discharged from the rinse liquid nozzle 22 is, for example, pure water (deionized water). The water is not limited to pure water, but may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).
The gas supply unit 8 includes a gas nozzle (nozzle) 27 that discharges a mixed gas (IPA Vapor + N ₂ ), a third nozzle arm 28 to which the gas nozzle 27 is attached, and a third nozzle arm 28. And a third nozzle moving unit 29 that moves the gas nozzle 27 by moving it.

FIG. 2 shows a mixed gas (IPA Vapo) of the gas nozzle 27 provided in the substrate processing apparatus 1.
is an enlarged sectional view showing a state in which discharging the r + N _2).
The gas nozzle 27 includes an inner cylinder (first cylinder) 31 and an outer cylinder (first cylinder) 32 that is fitted around the inner cylinder 31 and surrounds the inner cylinder 31. The inner cylinder 31 and the outer cylinder 32 are coaxially arranged on a common vertical axis A2. As shown in FIG. 3, the inner cylinder 31 has a cylindrical shape except for the lower end portion 31a. A flat flange 33 extending in the horizontal direction is formed at the lower end portion 31 a of the inner cylinder 31. The upper surface 33b and the lower surface 33c of the flange 33 each include a horizontal wall having a horizontal flat shape. In FIG. 2, the outer peripheral end 33 a of the flange 33 is depicted as being aligned with the outer periphery of the outer cylinder 32 in plan view, but the outer peripheral end 33 a of the flange 33 is more radially outward than the outer cylinder 32. It may be overhanging. The internal space of the inner cylinder 31 is a linear first gas flow path 34 through which a mixed gas (IPA Vapor + N ₂ ) from a first gas pipe 40 described later flows. A lower end of the first gas flow path 34 forms a first discharge port 35.

  The outer cylinder 32 includes a cylindrical portion 36 and a closing portion 37 that closes the upper end portion of the cylindrical portion 36. A space between the outer periphery of the inner cylinder 31 and the inner periphery of the closing portion 37 is liquid-tightly sealed by a seal member (not shown). Between the inner cylinder 31 and the cylindrical portion 36 of the outer cylinder 32, a cylindrical second gas flow path 38 is formed through which a processing liquid from a second gas pipe 42 described later flows. The inner cylinder 31 and the outer cylinder 32 are made of vinyl chloride, PCTFE (polychlorotrifluorethylene), PVDF (polyvinylidene fluoride), PTFE (polytetrafluoroethylene), PFA (perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer), respectively. ) Or the like.

An annular second discharge port 39 is defined at the lower end portion of the outer cylinder 32 by a lower end edge 32 a of the outer cylinder 32 and an outer peripheral end 33 a of the flange 33 of the inner cylinder 31. Since the upper surface 33b of the flange 33 is a horizontal flat surface, a horizontal flow is formed in the process in which the mixed gas (IPA Vapor + N ₂ ) flows through the second gas flow path 38 toward the second discharge port 39. Thus, the second discharge port 39 discharges the mixed gas (IPA Vapor + N ₂ ) flowing through the second gas flow path 38 radially in the horizontal direction.

The gas supply unit 8 further includes a first gas pipe 40 connected to the first gas flow path 34 of the gas nozzle 27, a first gas valve 41 interposed in the first gas pipe 40, A second gas pipe 42 connected to the second gas flow path 38 of the gas nozzle 27 and a second gas valve 43 interposed in the second gas pipe 42 are included. When the first gas valve 41 is opened, the mixed gas (IPA Vapor + N ₂ ) supplied from the first gas pipe 40 to the first gas flow path 34 of the gas nozzle 27 flows downward from the first discharge port 35. It is discharged toward. When the second gas valve 43 is opened, the mixed gas (IPA Vapor + N ₂ ) supplied from the second gas pipe 42 to the second gas flow path 38 of the gas nozzle 27 is supplied to the second discharge port 39. From, it is discharged radially in the horizontal direction.

When processing the substrate W by the substrate processing apparatus 1, the gas nozzle 27 is located at a lower position where the lower surface 33 c of the flange 33 faces the upper surface of the substrate W with a predetermined interval W 1 (for example, about 6 mm). Placed in. When the first gas valve 41 is opened in this state, the mixed gas (IPA Vapor + N ₂ ) discharged from the first discharge port 35 is sprayed onto the upper surface of the substrate W. The mixed gas (IPA Vapor + N ₂ ) discharged from the first discharge port 35 flows in the space SP between the lower surface 33c of the flange 33 and the upper surface of the substrate W, and the outer peripheral end 33a of the flange 33 and the substrate W It discharges radially and horizontally from the annular outlet 50 formed therebetween.

FIG. 3 is a flowchart for explaining a first processing example of processing performed by the substrate processing apparatus 1. 4A to 4F are schematic diagrams for explaining the first processing example. FIG. 5 is a graph showing the relationship between the processing time and the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 and the second discharge port 39. 6A and 6B are plan views showing the state of the boundary portion 47 of the liquid film of the rinsing liquid when the liquid film removal region 45 is enlarged.

A first processing example will be described with reference to FIGS. 4A to 4F, FIG. 5, and FIGS. 6A and 6B will be referred to as appropriate. The first processing example is a processing example in which a cleaning process is performed on the upper surface of the substrate W using a chemical solution.
When the substrate W is processed by the substrate processing apparatus 1, an unprocessed substrate W is carried into the chamber 4 (step S1). Specifically, the control device 3 moves the substrate W to the transfer robot (not shown) in the chamber 4 while the configuration in the chamber 4 such as the nozzles 17, 22, and 27 is retracted from above the spin chuck 5. To be brought in. Then, the control device 3 causes the transfer robot to place the substrate W on the spin chuck 5 with the processing target surface (for example, pattern formation surface) of the substrate W facing upward (substrate holding step). Thereafter, the control device 3 rotates the spin motor 13 while the substrate W is held by the spin chuck 5. Thereby, the rotation of the substrate W is started (step S2). The control device 3 retracts the transfer robot from the chamber 4 after the substrate W is placed on the spin chuck 5.

  Next, a chemical solution process (step S3) for supplying the chemical solution to the substrate W is performed. Specifically, the control device 3 controls the first nozzle moving unit 21 to move the chemical nozzle 17 from the retracted position to the processing position. Thereafter, the control device 3 opens the chemical liquid valve 19 and discharges the chemical liquid from the chemical liquid nozzle 17 toward the upper surface of the rotating substrate W. The chemical liquid discharged from the chemical liquid nozzle 17 is supplied to the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Further, the control device 3 moves the supply position of the chemical solution with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating. Thereby, the supply position of the chemical liquid passes through the entire upper surface of the substrate W, the entire upper surface of the substrate W is scanned, and the entire upper surface of the substrate W is processed uniformly. When a predetermined time elapses, the control device 3 closes the chemical liquid valve 19 to stop the discharge of the chemical liquid from the chemical liquid nozzle 17, and then controls the second nozzle moving unit 26 to control the chemical liquid nozzle 17. Retreat from above the spin chuck 5. Particles are removed from the upper surface of the substrate W carried into the chamber 4 by the chemical solution step (S3).

In the chemical solution step (S3), physical cleaning may be performed. As this physical cleaning, a droplet discharge cleaning that supplies a jet of a fine droplet of a chemical solution from a so-called two-fluid nozzle to the upper surface of the substrate W, or a surface of the substrate W while supplying the chemical solution to the surface of the substrate W. Examples of the brush cleaning include cleaning the surface by bringing a brush such as a scrub brush into contact therewith.
Next, a rinsing step (step S4) for supplying the rinsing liquid to the substrate W is performed. Specifically, the control device 3 moves the rinse liquid nozzle 22 from the retracted position to the processing position by controlling the second nozzle moving unit 26. Thereafter, the control device 3 opens the rinse liquid valve 24 and discharges water from the rinse liquid nozzle 22 toward the upper surface of the rotating substrate W. Similar to the chemical liquid discharged from the chemical liquid nozzle 17, the rinse liquid discharged from the rinse liquid nozzle 22 lands on the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the chemical liquid on the substrate W is pushed outward by the rinse liquid and discharged around the substrate W. Thereby, the chemical solution on the substrate W is washed away by the rinse solution. Furthermore, the control device 3 moves the supply position of the rinse liquid with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating. Thereby, the supply position of the rinsing liquid passes through the entire upper surface of the substrate W, the entire upper surface of the substrate W is scanned, and the entire upper surface of the substrate W is rinsed. The rinse liquid contains particles removed from the upper surface of the substrate W.

  Next, a paddle rinsing step (step S5) is performed in which the rinsing liquid film (processing liquid film) 44 is held on the substrate W in a state where the supply of the rinsing liquid to the substrate W is stopped. Specifically, the control device 3 controls the spin chuck 5 to stop the rotation of the substrate W in the state where the entire upper surface of the substrate W is covered with the rinsing liquid, or the rinsing step (S4). The rotational speed of the substrate W is reduced to a low rotational speed (for example, about 10 to 100 rpm) lower than the rotational speed at (FIG. 4A shows a state of low-speed rotation at about 50 rpm). Thus, a paddle-like rinsing liquid film 44 covering the entire upper surface of the substrate W is formed on the upper surface of the substrate W. In this state, the centrifugal force acting on the liquid film 44 of the rinsing liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinsing liquid and the upper surface of the substrate W, or the centrifugal force and the surface The tension is almost antagonistic. By the deceleration of the substrate W, the centrifugal force acting on the rinse liquid on the substrate W is weakened, and the amount of the rinse liquid discharged from the substrate W is reduced. The liquid film 44 of the rinse liquid may contain particles.

The control device 3 closes the rinse liquid valve 24 and stops the discharge of the rinse liquid from the rinse liquid nozzle 22 while the substrate W is stationary or the substrate W is rotating at a low rotation speed. Further, after the paddle-like rinse liquid film 44 is formed on the upper surface of the substrate W, the supply of the rinse liquid to the upper surface of the substrate W may be continued.
Next, the control device 3 performs a drying process (step S6).

Specifically, the control device 3 controls the third nozzle moving unit 29 to move the gas nozzle 27 from the retracted position to the central position. After the gas nozzle 27 is arranged at the center position, the gas mixture (IPA Vapor + N ₂ ) is discharged from the gas nozzle 27.
Specifically, first, the control device 3 opens the second gas valve 43, and as shown in FIG. 4B, the mixed gas (IPA Vapor + N ₂ ) is radially emitted from the second discharge port 39 of the gas nozzle 27. Discharge horizontally. Thereby, the mixed gas (IPA Vapor + N ₂ ) is supplied around the central portion of the liquid film 44 of the rinsing liquid on the substrate W, and the periphery of the central portion is in a rich state of the vapor of IPA.

Controller 3, as shown in FIG. 5, after start of the discharge of the mixed gas (IPA Vapor + _{N 2),} gradually increasing the discharge flow rate of the mixed gas (IPA Vapor + _{N 2)} from the second outlet port 39. In FIG. 5, the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) increases in proportion to the passage of time, but if it increases with the passage of time, it is not proportional to the passage of time. Also good.

When a predetermined period has elapsed since the discharge of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39, the control device 3 then opens the first gas valve 41 and the first of the gas nozzle 27. The mixed gas (IPA Vapor + N ₂ ) is discharged downward from the discharge port 35, and the mixed gas (IPA Vapor + N ₂ ) is sprayed on the central portion of the rinsing liquid film 44 on the upper surface of the substrate W as shown in FIG. 4C. Thereby, the rinse liquid in the central portion of the liquid film 44 of the rinse liquid is physically expanded by the spraying pressure (gas pressure), and blown off from the central portion of the upper surface of the substrate W to be removed. As a result, a liquid film removal region 45 is formed at the center of the upper surface of the substrate W.

The mixed gas (IPA Vapor + N ₂ ) discharged from the first discharge port 35 circulates in the space SP between the upper surface of the substrate W and the lower surface 33c of the flange 33, and between the outer peripheral end 33a of the flange 33 and the substrate W. It discharges radially and horizontally from the annular outlet 50 formed therebetween. Therefore, after the liquid film removal region 45 is formed, the mixed gas (IPA Vapor + N ₂ ) from the annular outlet 50 flows radially outward along the upper surface of the substrate W.

Controller 3, as shown in FIG. 5, after start of the discharge of the mixed gas (IPA Vapor + _{N 2),} gradually increasing the discharge flow rate of the mixed gas (IPA Vapor + _{N 2)} from the first discharge port 35. In FIG. 5, the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) increases in proportion to the passage of time, but if it increases with the passage of time, it is not proportional to the passage of time. Also good.

In addition, after starting the discharge of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35, the control device 3 controls the spin motor 13 to gradually reduce the rotation speed of the substrate W from zero or a low rotation speed. Increase. When the rotation speed of the substrate W exceeds a predetermined speed, a centrifugal force due to the rotation of the substrate W acts on the liquid film 44 of the rinse liquid on the substrate W. Further, as the rotation speed of the substrate W increases, the centrifugal force increases. As the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) increases and the rotation speed of the substrate W increases, the liquid film removal region 45 expands as shown in FIG. 4D. Further, the acceleration of the rotation of the substrate W, rather than after the start of the discharge of the gas mixture from the first discharge port 35 (IPA Vapor + _{N 2),} start of the discharge of the gas mixture from the first discharge port 35 (IPA Vapor + _{N 2)} You may make it start simultaneously.

Due to the enlargement of the liquid film removal region 45, a boundary 46 (a boundary including a gas-liquid solid three-layer interface) 46 moves to the outside of the substrate W. For the following two reasons, the atmosphere around the boundary 46 can be kept in a rich state of the IPA vapor regardless of the expansion state of the liquid film removal region 45.
The first reason is that since the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39 is gradually increased after the start of the discharge, the mixed gas discharged radially from the second discharge port 39 (IPA Vapor + N ₂ ) is always supplied around the boundary 46.

The second reason is as follows. That is, since the second discharge port 39 is disposed above the first discharge port 35, the flow 48 of the mixed gas (IPA Vapor + N ₂ ) discharged from the second discharge port 39 (see FIG. 2). Thus, the periphery of the boundary 46 is blocked from the region above the second discharge port 39. In addition, the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 is discharged radially and horizontally from the annular outlet 50, and the mixed gas (IPA Vapor + N ₂ ) is circumferentially moved along the upper surface of the substrate W. is flowing outward, the mixed gas from the second outlet port 39 (IPA Vapor + _{N 2)} flow 48 (see FIG. 2), the gas mixture from the first discharge port 35 (IPA Vapor + _{N 2)} is , And continues to be stopped at a position near the upper surface of the substrate W.

  When the atmosphere around the boundary 46 is a rich state of the vapor of IPA having a surface tension lower than that of the rinsing liquid, as shown in FIG. 2, a portion of the rinsing liquid film 44 near the boundary 46 ( Thermal convection does not occur in the inside of the “rinse liquid film boundary portion 47”, and in addition, in the boundary portion 47 of the rinse liquid film, the direction away from the boundary 46 (ie, heat A Marangoni convection 49 is generated that flows in the opposite direction to the convection. After the formation of the liquid film removal region 45, the atmosphere around the boundary 46 can be kept in a rich state of the IPA vapor regardless of the expansion state of the liquid film removal region 45.

6A to 6B are plan views showing a state of the boundary portion 47 of the liquid film of the rinse liquid when the liquid film removal region 45 is enlarged.
As shown in FIG. 6A, when the particles P contained in the rinse liquid film 44 are present at the boundary portion 47 of the rinse liquid film, the particles P are separated from the boundary 46 by the Marangoni convection 49. Inspired by direction. Therefore, when the boundary 46 moves toward the outside of the substrate W along with the enlargement of the liquid film removal region 45, the particles P also move toward the outside in the radial direction as shown in FIG. 6B. . Therefore, the liquid film removal region 45 is expanded while the particles P are taken into the boundary portion 47 of the rinse liquid film.

Then, the liquid film removal region 45 is enlarged over the entire area of the substrate W, and the liquid film 44 of the rinsing liquid is completely discharged from the upper surface of the substrate W (the state shown in FIG. 4F), whereby the entire area of the upper surface of the substrate W is obtained. Is dried. The particles contained in the rinsing liquid film 44 are removed from the upper surface of the substrate W together with the rinsing liquid film 44 without appearing in the liquid film removal region 45.
After the liquid film removal region 45 has expanded to the entire upper surface of the substrate W, the control device 3 closes the first gas valve 41 and the second gas valve 43, and the mixed gas from the gas nozzle 27 (IPA Vapor + N _2). ) Is stopped. Thereafter, the control device 3 controls the third nozzle moving unit 29 to retract the gas nozzle 27 from above the spin chuck 5. Further, the control device 3 controls the spin motor 13 to stop the rotation of the spin chuck 5 (rotation of the substrate W) (step S7).

Thereby, the processing for one substrate W is completed, and the control device 3 causes the processed substrate W to be unloaded from the chamber 4 by the transfer robot in the same manner as when the substrate W is loaded (step S8).
As described above, according to this embodiment, the liquid film of the rinsing liquid is sprayed onto the upper surface of the substrate W from above with the mixed gas (IPA Vapor + N ₂ ) on the liquid film 44 of the rinsing liquid formed on the upper surface of the substrate W. A liquid film removal region 45 is formed at 44. The boundary 46 moves toward the outside of the substrate W due to the enlargement of the liquid film removal region 45. By expanding the liquid film removal region 45 over the entire area of the substrate W, the entire area of the upper surface of the substrate W is dried.

Further, the mixed gas (IPA Vapor + N ₂ ) is discharged radially from the annular second discharge port 39 from the horizontal direction. The mixed gas (IPA Vapor + N ₂ ) discharged from the second discharge port 39 is supplied around the liquid film 44 of the rinse liquid formed on the upper surface of the substrate W. Therefore, the atmosphere near the upper surface of the liquid film 44 of the rinsing liquid can be maintained in a rich state of the IPA vapor. Therefore, after the formation of the liquid film removal region 45, the atmosphere around the boundary 46 can be kept in a rich state of IPA vapor. Thereby, the Marangoni convection 49 in the direction away from the boundary 46 can be generated inside the boundary portion 47 of the liquid film of the rinse liquid, and the generated Marangoni convection 49 can be maintained.

  Therefore, when particles are contained in the liquid film 44 of the rinsing liquid, the particles are urged in a direction away from the boundary 46 by the Marangoni convection 49. When the liquid film removal region 45 is enlarged, the atmosphere around the boundary 46 is kept in a rich state of the IPA vapor. Therefore, the liquid film removal region 45 can be enlarged while the particles in the rinse liquid film 44 are taken into the boundary portion 47 of the rinse liquid film. Therefore, the particles contained in the rinse liquid film 44 are removed from the upper surface of the substrate W together with the rinse liquid film 44 without appearing in the liquid film removal region 45. Therefore, no particles remain on the upper surface of the substrate W after the substrate W is dried. Thus, the entire upper surface of the substrate W can be dried while suppressing or preventing both the generation of particles and the generation of watermarks.

In addition, since the discharge of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39 is started prior to the start of the discharge of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35, Formation of the liquid film removal region 45 can be started in a state where the atmosphere near the upper surface is rich in the vapor of IPA. Thereby, the Marangoni convection 49 flowing in the direction away from the boundary 46 can be generated inside the boundary portion 47 of the liquid film of the rinse liquid from the start of the formation of the liquid film removal region 45.

Further, since the second discharge port 39 is disposed above the first discharge port 35, the boundary 46 is surrounded by the flow of the mixed gas (IPA Vapor + N ₂ ) discharged from the second discharge port 39. There is also an effect of blocking from a region above the second discharge port 39. Thereby, the periphery of the boundary 46 can be maintained in a richer state of the IPA vapor.
The mixed gas (IPA Vapor + N ₂ ) discharged from the first discharge port 35 circulates in the space SP between the upper surface of the substrate W and the flange 33, and between the outer peripheral end 33 a of the flange 33 and the substrate W. Are discharged radially and horizontally from the annular outlet 50. Therefore, after the liquid film removal region 45 is formed, the mixed gas (IPA Vapor + N ₂ ) flows along the upper surface of the substrate W outward in the circumferential direction. Thereby, the circumference | surroundings of the boundary 46 can be kept further in the rich state of the vapor | steam of IPA.

In addition, since the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39 is gradually increased after the start of the discharge, regardless of the expansion state of the liquid film removal region 45, The atmosphere can be kept in a rich state of IPA vapor.
For example, it is conceivable to spray the IPA vapor onto the liquid film 44 of the rinsing liquid while filling the entire interior of the chamber 4 with the atmosphere of the IPA vapor. However, in this case, since it is necessary to fill the entire interior of the chamber 4 with the atmosphere of the IPA vapor, the consumption of IPA becomes enormous.

On the other hand, in this embodiment, the mixed gas (IPA Vapor + N ₂ ) is discharged from the second discharge port 39 in the horizontal direction and radially, so that the atmosphere around the boundary 46 is made rich in the IPA vapor. Can keep. Thereby, the upper surface of the substrate W can be satisfactorily dried while reducing the IPA.
FIG. 7 is an illustrative view for describing a second processing example of the processing performed by the substrate processing apparatus 1.

The difference between the second processing example and the first processing example shown in FIGS. 3 to 4F is that the substrate of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 in the drying step (S6). After starting to spray W onto the upper surface (that is, after forming the liquid film removal region 45), the spray position of the mixed gas (IPA Vapor + N ₂ ) on the upper surface of the substrate W is moved from the center of the upper surface of the substrate W to the peripheral edge of the upper surface. By doing so, the liquid film removal region 45 is enlarged. In other respects, the second processing example is common to the first processing example.

Specifically, after the liquid film removal region 45 is formed, the control device 3 moves the third nozzle while continuing to spray the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 of the gas nozzle 27. By controlling the unit 29, the gas nozzle 27 is moved horizontally outwardly in the radial direction from above the central portion of the upper surface of the substrate W to above the peripheral portion of the upper surface. Thereby, the liquid film removal area | region 45 expands.

In the second processing example, the liquid film removal region 45 can be enlarged by moving the spray position of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 radially outward. Therefore, the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 may be kept constant after the start of discharge. Further, the rotation speed of the substrate W may also be maintained at zero or a low rotation speed (FIG. 7 shows a case of rotating at 50 rpm).

Further, the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39 is kept constant after the start of discharge.
The boundary 46 moves toward the outside of the substrate W due to the enlargement of the liquid film removal region 45. Since the boundary 46 moves following the movement of the spray position of the mixed gas from the first discharge port 35, in other words, the boundary 46 moves following the movement of the gas nozzle 27. Therefore, the gas mixture (IPA Vapor + N ₂ ) discharged radially from the second discharge port 39 can always be supplied around the boundary 46 regardless of the expansion state of the liquid film removal region 45. Thus, the atmosphere around the boundary 46 can be kept in a rich state of the IPA vapor regardless of the expansion state of the liquid film removal region 45.

As described above, in the second processing example, the same effects as the effects described in the first processing example are achieved.
Further, in the second process example, the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39 may gradually increase after the start of discharge as in the first process example. Good.

Further, in the second processing example, even if the discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 gradually increases after the start of discharge as in the first processing example. Good. Further, the rotational speed of the substrate W may be gradually increased after the start of ejection as in the first processing example.
FIG. 8 is an illustrative view for explaining the configuration of the substrate processing apparatus 201 according to the second embodiment of the present invention.

In the second embodiment, portions common to the first embodiment are denoted by the same reference numerals as those in FIGS. 1 to 7 and description thereof is omitted. The main difference between the substrate processing apparatus 201 according to the second embodiment and the substrate processing apparatus 1 according to the first embodiment is that the opposing member 202 facing the upper surface of the substrate W held by the spin chuck 5 is used. It is a point provided.
The facing member 202 has a disk shape. The diameter of the facing member 202 is equal to or larger than the diameter of the substrate W. On the lower surface of the facing member 202, a circular facing surface 204 made of a flat surface is formed facing the upper surface of the substrate W held by the spin chuck 5. The facing surface 204 is opposed to the entire upper surface of the substrate W. The facing member 202 is supported by the holder 205 in a horizontal posture so that the center axis of the facing member 202 is positioned on the rotation axis A1 of the spin chuck 5.

  On the upper surface of the opposing member 202, a holder 205 having a vertical axis passing through the center of the opposing member 202 (a vertical axis that coincides with the rotational axis A1 of the spin chuck 5) as a central axis is fixed. The holder 205 is formed in a hollow shape, and a gas nozzle (nozzle) 203 is inserted into the holder 205 while extending in the vertical direction. The gas nozzle 203 protrudes below the facing surface 204 through a through hole 212 formed in the center of the facing member 202. The gas nozzle 203 is positioned with respect to the facing member 202 so that the first and second discharge ports 35 and 39 are exposed below the facing surface 204. More specifically, the gap between the facing surface 204 and the upper end of the second discharge port 39 is a slight amount.

A third gas pipe 206 is connected to the first gas flow path 34 of the gas nozzle 203. A third gas valve 207 is interposed in the third gas pipe 206. A fourth gas pipe 208 is connected to the second gas flow path 38 of the gas nozzle 203. A fourth gas valve 209 is interposed in the fourth gas pipe 208. When the third gas valve 207 is opened, the mixed gas (IPA Vapor + N ₂ ) supplied from the third gas pipe 206 to the first gas flow path 34 of the gas nozzle 203 is lowered from the first discharge port 35. It is discharged toward. When the fourth gas valve 209 is opened, the mixed gas (IPA Vapor + N ₂ ) supplied from the fourth gas pipe 208 to the second gas flow path 38 of the gas nozzle 203 is supplied to the second discharge port 39. From, it is discharged radially in the horizontal direction.

  A support member lifting / lowering unit 211 is coupled to the holder 205. The control device 3 controls the support member lifting / lowering unit 211 so that the facing surface 204 of the facing member 202 is greatly positioned near the upper surface of the substrate W held by the spin chuck 5 and above the spin chuck 5. Raise / lower between the retracted and retracted positions. When the facing member 202 is located at the close position, the lower surface 33c (see FIG. 2) of the flange 33 of the gas nozzle 203 is opposed to the upper surface of the substrate W with a predetermined interval W2 (for example, about 6 mm).

In the substrate processing apparatus 201 according to the second embodiment, for example, processing equivalent to that of the first processing example (see FIGS. 3 and 4A to 4F) is executed. In the drying process (step S6 in FIG. 3), the control device 3 controls the support member lifting / lowering unit 211 to place the facing member 202 at the close position. Thereafter, the mixed gas (IPA Vapor + N ₂ ) is discharged from the gas nozzle 203. The discharge timing and discharge flow rate of the mixed gas (IPA Vapor + N ₂ ) from the first and second discharge ports 35 and 39 of the gas nozzle 203 and the mode of rotation of the substrate W are the first processing of the first embodiment. It is equivalent to the example. Therefore, in 2nd Embodiment, there exists an effect equivalent to the effect demonstrated in relation to 1st Embodiment.

In the second embodiment, in addition to the effects described in relation to the first embodiment, the mixed gas (IPA Vapor + N ₂ ) discharged from the second discharge port 39 is caused to flow between the opposing surface 204 and the substrate. A space 210 between the upper surface of W is filled. Therefore, the mixed gas (IPA Vapor + N ₂ ) can be prevented from flowing out from near the upper surface of the substrate W. As a result, the atmosphere around the boundary 46 can be kept in a richer state of the IPA vapor.

FIG. 9 is an illustrative view for explaining the configuration of a substrate processing apparatus 301 according to the third embodiment of the present invention.
In the third embodiment, parts common to the second embodiment are denoted by the same reference numerals as those in FIG. The main difference between the substrate processing apparatus 301 according to the third embodiment and the substrate processing apparatus 201 according to the second embodiment is that a counter member 202A is provided instead of the counter member 202.

  The facing member 202A has a disk shape. The diameter of the facing member 202A may be equal to the diameter of the substrate W, or may be larger than the diameter of the substrate W as shown in FIG. On the lower surface of the opposing member 202A, an opposing surface 204A that faces the upper surface of the substrate W held by the spin chuck 5 is formed. The central portion of the facing surface 204A is formed in a horizontal flat shape. An annular protrusion (opposing peripheral edge) 302 is formed on the peripheral edge of the opposing surface 204A. A tapered surface 303 is formed on the lower surface of the annular protrusion 302 so as to go downward in the radial direction. As shown in FIG. 9, when the diameter of the opposing member 202A is larger than the diameter of the substrate W, the peripheral edge of the opposing member 202A projects outward from the peripheral edge of the substrate W in plan view. .

  The control device 3 controls the support member lifting / lowering unit 211 so that the facing surface 204A of the facing member 202A is greatly close to the upper surface of the substrate W held by the spin chuck 5 and above the spin chuck 5. Raise / lower between the retracted and retracted positions. When the facing member 202A is located at the close position, the lower surface 33c (see FIG. 2) of the flange 33 of the gas nozzle 203 is opposed to the upper surface of the substrate W with a predetermined interval W2 (for example, about 6 mm). In this state, as shown in FIG. 9, the outer peripheral end 303 a of the tapered surface 303 is positioned below the upper surface of the substrate W in the vertical direction. Therefore, the space defined by the facing surface 204A and the upper surface of the substrate W forms a sealed space that is substantially sealed from the outer space. The gap between the peripheral edge of the upper surface of the substrate W and the annular protrusion 302 (that is, the tapered surface 303) is significantly narrower than the distance between the central portion of the opposing surface 204A and the upper surface of the substrate W. It has been.

In the substrate processing apparatus 301 according to the third embodiment, processing equivalent to that of the substrate processing apparatus 201 according to the second embodiment is executed. That is, in the drying process (step S6 in FIG. 3), the control device 3 controls the support member lifting / lowering unit 211 to place the facing member 202A in the proximity position.
In the third embodiment, in addition to the operational effects described in relation to the second embodiment, the space defined by the facing surface 204A and the upper surface of the substrate W is substantially sealed from the outer space. Therefore, the mixed gas (IPA Vapor + N ₂ ) supplied to the space 210A between the facing surface 204A and the upper surface of the substrate W is difficult to be discharged from the space 210A. Therefore, it is possible to further suppress the mixed gas (IPA Vapor + N ₂ ) from flowing out from near the upper surface of the substrate W. Thereby, the atmosphere around the boundary 46 can be kept in an even richer state of the IPA vapor.

While the three embodiments of the present invention have been described above, the present invention can also be implemented in other forms.
For example, in the first processing example of the first embodiment (the same applies to the processing examples of the second and third embodiments), the flow rate of the mixed gas (IPA Vapor + N ₂ ) is increased and the rotation speed of the substrate W is increased. In the above description, the liquid film removal region 45 is enlarged as an example. However, the expansion of the liquid film removal region 45 increases the flow rate of the mixed gas (IPA Vapor + N ₂ ) and increases the rotation speed of the substrate W. It may be achieved only by one of the conversions.

In each of the above-described embodiments, the discharge of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39 is started prior to the start of the discharge of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35. As described above, the discharge start timing of the mixed gas (IPA Vapor + N ₂ ) from the first discharge port 35 may be the same as the discharge start timing of the mixed gas (IPA Vapor + N ₂ ) from the second discharge port 39. Good.

Further, in each of the above-described embodiments, the gas discharged from the first and second discharge ports 35 and 39 has been described as a mixed gas (IPA Vapor + N ₂ ), but the first and second discharge ports 35, As the gas discharged from 39, an IPA vapor (a vapor of a low surface tension liquid) that does not contain N ₂ gas may be employed.
Further, IPA, which is an example of an organic solvent having a surface tension lower than that of the rinsing liquid, has been described as an example of the low surface tension liquid. In addition to IPA, for example, methanol, ethanol, acetone, etc. , And HFE (hydrofluoroether) can be employed.

Further, in each of the above-described embodiments, the case where the treatment liquid constituting the liquid film 44 is a rinse liquid has been described as an example. However, even if the treatment liquid constituting the liquid film is IPA (liquid). Good. In this case, the vapor of the low surface tension liquid contained in the gas discharged from the first and second discharge ports 35 and 39 may be HFE or EG (ethylene glycol).
Further, the gas nozzles 27 and 203 have been described as a configuration in which the annular outlet 50 and the annular second discharge port 39 are vertically partitioned by the flange 33. However, the configuration is not limited to such a configuration, and the nozzle shape of another configuration is used. Needless to say, it may be adopted.

Moreover, the gas discharged from the first discharge port 35 (first gas) and the gas discharged from the second discharge port 39 (second gas) may be different from each other.
In each of the above-described embodiments, the case where the substrate processing apparatuses 1, 201, and 301 are apparatuses that process the disk-shaped substrate W has been described. However, the substrate processing apparatuses 1, 201, and 301 are used for liquid crystal display devices. An apparatus for processing a polygonal substrate such as a glass substrate may be used.

In addition, various design changes can be made within the scope of matters described in the claims.
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Control apparatus (control means)
5 Spin chuck (substrate holding means)
7. Rinse solution supply unit (treatment solution supply means)
8 Gas supply unit (first gas supply means, second gas supply means)
13 Spin motor (substrate rotation means)
27 Gas nozzle (nozzle)
31 Inner cylinder (first cylinder)
31a Lower end portion of inner cylinder 32 Outer cylinder (second cylinder)
33 Flange 35 First discharge port 39 Second discharge port 44 Liquid film of rinse liquid (liquid film of treatment liquid)
45 Liquid Film Removal Region 202 Opposing Member 202A Opposing Member 203 Gas Nozzle (Nozzle)
204 Opposing surface 204A Opposing surface 303a The outer peripheral edge of the tapered surface (opposing peripheral edge of the opposing surface)

Claims (12)

A substrate holding step for holding the substrate horizontally;
A liquid film forming step of supplying a processing liquid to the upper surface of the substrate and forming a liquid film of the processing liquid covering the upper surface of the substrate;
After the liquid film forming step, in order to form a liquid film removal region in which the liquid film is removed from the liquid film of the processing liquid, a low surface tension liquid vapor having a lower surface tension than the processing liquid is included. A first gas discharge step of discharging one gas from a first discharge port and spraying the first gas from a direction intersecting the upper surface onto the liquid film of the processing liquid;
A second gas that discharges a second gas containing a vapor of a low surface tension liquid having a surface tension lower than that of the processing liquid from an annular second discharge port that is different from the first discharge port in a lateral direction and in a radial manner. Gas discharge process of
A substrate processing method comprising: a liquid film removal region expanding step of expanding the liquid film removal region.   The substrate processing method according to claim 1, wherein the second discharge port is disposed above the first discharge port in the vertical direction.   The substrate processing method according to claim 1, wherein the first gas discharge step and the second gas discharge step are executed in parallel.   The substrate processing method according to claim 1, wherein the second gas discharge step is started prior to the start of the first gas discharge step. The liquid film removal region expanding step includes a first flow rate increasing step of gradually increasing the flow rate of the first gas discharged from the first discharge port after the start of discharge of the first gas. ,
The substrate processing method further includes a second flow rate increasing step of gradually increasing the flow rate of the second gas discharged from the second discharge port after starting the discharge of the second gas. Item 5. The substrate processing method according to any one of Items 1 to 4. The treatment liquid includes a rinse liquid,
The substrate processing method according to claim 1, wherein the low surface tension liquid includes an organic solvent. Substrate holding means for holding the substrate horizontally;
Treatment liquid supply means for supplying a treatment liquid to the upper surface of the substrate;
A nozzle having a first discharge port for discharging gas downward and an annular second discharge port for discharging gas horizontally;
A first gas supply means for supplying a first gas containing a vapor of a low surface tension liquid having a surface tension lower than that of the processing liquid to the first discharge port;
A second gas supply means for supplying a second gas containing a vapor of a low surface tension liquid having a lower surface tension than the processing liquid to the second discharge port;
Control means for controlling the processing supply means, the first gas supply means, the second gas supply means and the substrate rotation means,
The control means supplies a processing liquid to the upper surface of the substrate to form a liquid film of the processing liquid that covers the upper surface of the substrate, and after the liquid film forming process, the liquid of the processing liquid In order to form a liquid film removal region in which the liquid film is removed from the film, the first gas is discharged from the first discharge port, and the first gas is blown onto the liquid film of the processing liquid. 1 gas discharge step, a second gas discharge step of discharging the second gas laterally and radially from the second discharge port, and a liquid film removal region expansion step of expanding the liquid film removal region, Performing the substrate processing apparatus. The nozzle includes a first cylindrical body in which a first flow path through which the first gas flows is formed, and the first discharge port is formed by a lower end portion of the cylindrical body. And a flange is provided at the lower end portion of the first cylindrical body,
The substrate processing apparatus according to claim 7, wherein the first gas discharged from the first discharge port flows through a space between the upper surface of the substrate and the flange.   The substrate processing apparatus according to claim 8, wherein the second discharge port is disposed above the flange. The nozzle is a second cylinder that surrounds the first cylinder, and is a second cylinder that divides a second flow path through which the second gas flows between the first cylinder and the second cylinder. It further has a cylinder
The substrate processing apparatus according to claim 9, wherein the second discharge port is formed by the second cylindrical body and the flange.   The board | substrate as described in any one of Claims 7-10 which further has an opposing member which opposes the upper surface of the said board | substrate, and has an opposing surface which guides the said 2nd gas discharged from the said 2nd discharge outlet. Processing equipment.   The facing member is opposed to the peripheral edge of the upper surface of the substrate, and forms a narrow gap between the peripheral edge of the upper surface and the central portion of the opposing surface and the central portion of the upper surface of the substrate. The substrate processing apparatus according to claim 11, comprising an opposing peripheral edge.

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