TWI643683B - Fluid providing device - Google Patents

Fluid providing device Download PDF

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Publication number
TWI643683B
TWI643683B TW106135982A TW106135982A TWI643683B TW I643683 B TWI643683 B TW I643683B TW 106135982 A TW106135982 A TW 106135982A TW 106135982 A TW106135982 A TW 106135982A TW I643683 B TWI643683 B TW I643683B
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TW
Taiwan
Prior art keywords
gas
fluid
substrate
fluid supply
supply device
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TW106135982A
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Chinese (zh)
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TW201916945A (en
Inventor
Chuan-Chang Feng
馮傳彰
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Scientech Corporation
辛耘企業股份有限公司
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Application filed by Scientech Corporation, 辛耘企業股份有限公司 filed Critical Scientech Corporation
Priority to TW106135982A priority Critical patent/TWI643683B/en
Priority to KR1020180081765A priority patent/KR102130889B1/en
Priority to CN201810897240.4A priority patent/CN109686678B/en
Application granted granted Critical
Publication of TWI643683B publication Critical patent/TWI643683B/en
Publication of TW201916945A publication Critical patent/TW201916945A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Nozzles (AREA)

Abstract

一種流體供應裝置用以處理一基板,基板包括一非平面區域。流體供應裝置包括一流體供應單元和一氣體供應單元。流體供應單元用以朝基板輸出流體。氣體供應單元位於流體供應單元的外側,氣體供應單元包括一氣體輸出部,氣體輸出部用以朝基板輸出一第一氣體。當流體供應單元朝基板輸出流體時,會在非平面區域上形成一濕式製程;當氣體輸出部朝基板輸出第一氣體,且第一氣體沿著相對基板的一水平方向流動時,第一氣體會在非平面區域上形成一移除製程,以移除流體。A fluid supply device is used to process a substrate. The substrate includes a non-planar area. The fluid supply device includes a fluid supply unit and a gas supply unit. The fluid supply unit is configured to output a fluid toward the substrate. The gas supply unit is located outside the fluid supply unit. The gas supply unit includes a gas output portion, and the gas output portion is configured to output a first gas toward the substrate. When the fluid supply unit outputs fluid to the substrate, a wet process is formed on the non-planar area; when the gas output portion outputs the first gas toward the substrate, and the first gas flows along a horizontal direction opposite to the substrate, the first The gas will form a removal process on the non-planar area to remove the fluid.

Description

流體供應裝置Fluid supply device

本發明係關於一種流體供應裝置,特別是一種有效處理基板表面的流體供應裝置。The invention relates to a fluid supply device, in particular to a fluid supply device for effectively treating the surface of a substrate.

在基板製程中,常會對基板表面進行清洗,以去除基板表面的雜質。在清洗基板表面時,通常是利用壓縮空氣高速流動的原理,讓習知的噴嘴朝晶圓表面提供流動的液體,或者是透過蒸氣產生器來將液體形成高壓蒸氣,再將高壓蒸氣提供至基板表面。如此一來即可讓流動液體或高壓蒸汽清潔基板表面。In the substrate manufacturing process, the substrate surface is often cleaned to remove impurities on the substrate surface. When cleaning the surface of the substrate, the principle of high-speed flow of compressed air is usually used to allow the conventional nozzle to provide a flowing liquid toward the wafer surface, or the liquid is formed into a high-pressure vapor through a steam generator, and then the high-pressure vapor is provided to the substrate. surface. In this way, the surface of the substrate can be cleaned by flowing liquid or high-pressure steam.

然而,噴嘴以高速液體沖洗係將液體或氣體供應至基板表面,當欲處理的基板具有較深溝槽時,雜質仍可能殘存於該溝槽。另外,高壓蒸氣係藉由高溫高壓蒸氣機來產生,且供應過程需要精準的控制壓力以避免壓力過高而產生爆炸的危險,因此,生產高壓蒸氣過程的危險性相對提高,且須額外購置高溫高壓蒸氣機,相對的提高製程成本。However, the nozzle supplies liquid or gas to the substrate surface with a high-speed liquid flushing system. When the substrate to be processed has deep grooves, impurities may still remain in the grooves. In addition, high-pressure steam is generated by a high-temperature and high-pressure steam engine, and the supply process requires precise control of pressure to avoid the danger of explosion due to excessive pressure. Therefore, the danger of the production of high-pressure steam is relatively increased, and additional high temperature must be purchased High-pressure steam engines relatively increase process costs.

因此,有必要提供一種流體噴嘴,其可以有效處理基板表面以及基板之溝槽。Therefore, it is necessary to provide a fluid nozzle that can effectively treat the substrate surface and the grooves of the substrate.

本發明之主要目的係在提供一種可以有效處理基板表面的流體供應裝置。The main object of the present invention is to provide a fluid supply device capable of effectively treating the surface of a substrate.

為達成上述之目的,本發明之流體供應裝置用以處理一基板,基板包括一非平面區域。流體供應裝置包括一流體供應單元和一氣體供應單元。流體供應單元,用以朝基板輸出一流體。氣體供應單元位於流體供應單元的外側,氣體供應單元包括一氣體輸出部,氣體輸出部用以朝基板輸出一第一氣體。當流體供應單元朝基板輸出流體時,會在非平面區域上形成一濕式製程;當氣體輸出部朝基板輸出第一氣體,且第一氣體沿著相對基板的一水平方向流動時,第一氣體會在非平面區域上形成一移除製程,以移除流體。To achieve the above object, the fluid supply device of the present invention is used to process a substrate, and the substrate includes a non-planar area. The fluid supply device includes a fluid supply unit and a gas supply unit. The fluid supply unit is configured to output a fluid toward the substrate. The gas supply unit is located outside the fluid supply unit. The gas supply unit includes a gas output portion, and the gas output portion is configured to output a first gas toward the substrate. When the fluid supply unit outputs fluid to the substrate, a wet process is formed on the non-planar area; when the gas output portion outputs the first gas toward the substrate, and the first gas flows along a horizontal direction opposite to the substrate, the first The gas will form a removal process on the non-planar area to remove the fluid.

根據本發明之一實施例,其中氣體供應單元更包括一外環體,外環體位於本體的外側,且外環體和本體之間具有一第一間距,第一間距界定第一氣體從氣體供應單元流出的一氣體流量。According to an embodiment of the present invention, the gas supply unit further includes an outer ring body, the outer ring body is located outside the body, and there is a first distance between the outer ring body and the body, and the first distance defines the first gas from the gas A gas flow from the supply unit.

根據本發明之一實施例,其中氣體供應單元供應的第一氣體是一環型氣流。According to an embodiment of the present invention, the first gas supplied by the gas supply unit is a ring-shaped gas flow.

根據本發明之一實施例,其中當流體供應裝置於基板上方執行一連續製程時,非平面區域將依序接受環形氣流形成的噴除製程、流體形成的濕式製程,和環形氣流形成的移除製程。According to an embodiment of the present invention, when the fluid supply device executes a continuous process above the substrate, the non-planar area will sequentially receive the ejection process formed by the annular airflow, the wet process formed by the fluid, and the displacement formed by the annular airflow. Division process.

根據本發明之一實施例,其中當流體供應裝置於基板上方執行一連續製程時,環型氣流先將未被流體接觸過的非平面區域的一空氣移除,並使非平面區域形成一負壓狀態;接著,流體供應單元將流體提供至基板,流體藉由負壓狀態而移動至非平面區域,以對非平面區域進行濕式製程;接著,環型氣流將非平面區域的流體移除。According to an embodiment of the present invention, when the fluid supply device performs a continuous process above the substrate, the annular airflow first removes an air in a non-planar area that has not been contacted by the fluid, and makes the non-planar area a negative Pressure state; then, the fluid supply unit supplies the fluid to the substrate, and the fluid moves to the non-planar region by a negative pressure state to perform a wet process on the non-planar region; then, the annular airflow removes the fluid from the non-planar region .

根據本發明之一實施例,其中環型氣流將非平面區域的空氣移除,並移除非平面區域內的一部分雜質,流體移動至非平面區域以移動非平面區域內的其餘雜質;接著,環型氣流將非平面區域內的含有其餘雜質的流體移除。According to an embodiment of the present invention, the annular airflow removes the air in the non-planar area and removes a part of the impurities in the non-planar area, and the fluid moves to the non-planar area to move the remaining impurities in the non-planar area; then, The annular air flow removes the fluid containing the remaining impurities in the non-planar area.

根據本發明之一實施例,其中流體供應單元包括一本體、一氣體輸入端、一液體輸入端以及一第一流體輸出部,氣體輸入端連接本體,用以輸入一第二氣體至本體內,液體輸入端連接本體,用以輸入一液體至本體內,液體和第二氣體混合而成流體,第一流體輸出部用以朝基板輸出流體,流體為一霧化液體。According to an embodiment of the present invention, the fluid supply unit includes a body, a gas input end, a liquid input end, and a first fluid output part, and the gas input end is connected to the body for inputting a second gas into the body, The liquid input end is connected to the body for inputting a liquid into the body, and the liquid and the second gas are mixed into a fluid. The first fluid output part is used to output the fluid toward the substrate, and the fluid is an atomized liquid.

根據本發明之一實施例,其中本體包括一混合空間,第二氣體和液體於混合空間混合形成霧化液體,霧化液體由第一流體輸出部輸出至基板。According to an embodiment of the present invention, the body includes a mixing space, and the second gas and the liquid are mixed in the mixing space to form an atomized liquid, and the atomized liquid is output to the substrate by the first fluid output portion.

根據本發明之一實施例,其中當流體供應裝置進行濕式製程時,流體供應單元將流體提供至基板的非平面區域,且氣體供應單元暫停供應第一氣體。According to an embodiment of the present invention, when the fluid supply device performs a wet process, the fluid supply unit supplies fluid to a non-planar area of the substrate, and the gas supply unit temporarily suspends supplying the first gas.

根據本發明之一實施例,其中當流體供應裝置進行一噴除製程時,氣體供應單元將第一氣體沿著相對基板之水平方向流動,以將非平面區域內的一空氣移除,且流體供應單元暫停供應流體。According to an embodiment of the present invention, when the fluid supply device performs a spray process, the gas supply unit flows the first gas in a horizontal direction relative to the substrate to remove an air in the non-planar area, and the fluid The supply unit has temporarily stopped supplying fluid.

根據本發明之一實施例,其中氣體輸出部和基板之間具有一第二間距,第二間距介於3公釐至6公釐之間。According to an embodiment of the present invention, the gas output portion and the substrate have a second distance therebetween, and the second distance is between 3 mm and 6 mm.

根據本發明之一實施例,其中非平面區域是一凸緣或一凹槽。According to an embodiment of the present invention, the non-planar area is a flange or a groove.

藉由本發明之流體供應裝置,可以對基板進行噴除製程、濕式製程,和移除製程等三個階段的連續製程,以有效處理基板表面之平面區域及其非平面區域之凹槽或非平面區域之凸緣等,非平面結構。另外,上述三種製程可同時進行或是依需求分開進行;以同時進行來說,流體供應裝置於基板上進行單一行程時,即可同時達到三種處理效果。With the fluid supply device of the present invention, the substrate can be continuously processed in three stages, such as a spray process, a wet process, and a removal process, so as to effectively process the grooves or non-planar areas of the substrate surface and its non-planar areas. Flange in flat area, etc., non-planar structure. In addition, the above three processes can be performed simultaneously or separately according to requirements; for simultaneous operation, when the fluid supply device performs a single stroke on the substrate, three processing effects can be achieved at the same time.

為能讓 貴審查委員能更瞭解本發明之技術內容,特舉較佳具體實施例說明如下。In order to make your reviewing committee better understand the technical content of the present invention, specific preferred embodiments are described below.

以下請一併參考圖1至圖7關於本發明第一實施例之流體供應裝置。圖1係本發明之第一實施例之流體供應裝置之示意圖;圖2係本發明之第一實施例之進行噴除製程時的流體供應裝置之示意圖;圖3係本發明之第一實施例之進行濕式製程時的流體供應裝置之示意圖;圖4係本發明之第一實施例之再次進行噴除製程時的流體供應裝置之示意圖;圖5係本發明之第一實施例之接續進行噴除製程、濕式製程以及移除製程時的第一步驟的流體供應裝置之示意圖;圖6係本發明之第一實施例之接續進行噴除製程、濕式製程以及移除製程時的第二步驟的流體供應裝置之示意圖;圖7係本發明之第一實施例之接續進行噴除製程、濕式製程以及移除製程時的第三步驟的流體供應裝置之示意圖。In the following, please refer to FIG. 1 to FIG. 7 for a fluid supply device according to a first embodiment of the present invention. FIG. 1 is a schematic diagram of a fluid supply device according to a first embodiment of the present invention; FIG. 2 is a schematic diagram of a fluid supply device when performing a spraying process according to a first embodiment of the present invention; and FIG. 3 is a first embodiment of the present invention Schematic diagram of the fluid supply device when the wet process is performed; FIG. 4 is a schematic diagram of the fluid supply device when the spray process is performed again in the first embodiment of the present invention; FIG. 5 is a continuation of the first embodiment of the present invention Schematic diagram of the fluid supply device in the first step of the spraying process, the wet process, and the removing process; FIG. 6 is a diagram showing the first step of the first embodiment of the present invention when the spraying process, the wet process, and the removing process are successively performed; Schematic diagram of the two-step fluid supply device; FIG. 7 is a schematic diagram of the third step of the fluid supply device in the first embodiment of the present invention following the ejection process, the wet process, and the removal process.

如圖1所示,本發明之第一實施例之流體供應裝置1是用以處理一基板100。基板100包括一平面區域以及一非平面區域110,非平面區域110為一凹槽或一凸緣所組成,本實施例以凹槽為舉例,凹槽內有複數雜質T、T1,例如微粒(Particle)。流體供應裝置1包括一流體供應單元10和一氣體供應單元20。As shown in FIG. 1, a fluid supply device 1 according to a first embodiment of the present invention is used to process a substrate 100. The substrate 100 includes a planar region and a non-planar region 110. The non-planar region 110 is composed of a groove or a flange. In this embodiment, the groove is used as an example. The groove has a plurality of impurities T and T1, such as particles ( Particle). The fluid supply device 1 includes a fluid supply unit 10 and a gas supply unit 20.

如圖1至圖3所示,在本發明之第一實施例之中,流體供應單元10用以朝基板100提供一流體,以處理基板100表面,本實施例的流體以一霧化液體F作為舉例。流體供應單元10以二流體噴嘴作為舉例,流體供應單元10包括一本體11、一氣體輸入端12、一液體輸入端13和一第一流體輸出部14。本體11為一鐘形結構,本體11之鐘形結構內部包括一混合空間111。氣體輸入端12連接本體11,且氣體輸入端12可連接一外部的管路200。氣體輸入端12用以接收管路200供應的第二氣體A,以將第二氣體A輸入至本體11之混合空間111內。液體輸入端13連接本體11,且液體輸入端13可連接一外部的管路200a;液體輸入端13用以接收管路200a供應的液體L,以將液體L輸入至本體11之混合空間111內;第二氣體A和液體L會於混合空間111混合,而形成霧化液體F。第一流體輸出部14設於本體11的底部並朝向基板100,且第一流體輸出部14連通混合空間111。第一流體輸出部14用以朝基板100輸出混合空間111內的霧化液體F,以處理基板100。As shown in FIG. 1 to FIG. 3, in the first embodiment of the present invention, the fluid supply unit 10 is configured to provide a fluid to the substrate 100 to process the surface of the substrate 100. The fluid in this embodiment is an atomized liquid F As an example. The fluid supply unit 10 uses two fluid nozzles as an example. The fluid supply unit 10 includes a body 11, a gas input end 12, a liquid input end 13, and a first fluid output portion 14. The main body 11 is a bell-shaped structure. The bell-shaped structure of the main body 11 includes a mixing space 111 inside. The gas input terminal 12 is connected to the body 11, and the gas input terminal 12 can be connected to an external pipeline 200. The gas input terminal 12 is used to receive the second gas A supplied by the pipeline 200 to input the second gas A into the mixing space 111 of the main body 11. The liquid input terminal 13 is connected to the body 11 and the liquid input terminal 13 can be connected to an external pipe 200a. The liquid input terminal 13 is used to receive the liquid L supplied by the pipe 200a to input the liquid L into the mixing space 111 of the body 11. ; The second gas A and the liquid L are mixed in the mixing space 111 to form an atomized liquid F. The first fluid output portion 14 is disposed on the bottom of the body 11 and faces the substrate 100, and the first fluid output portion 14 communicates with the mixing space 111. The first fluid output portion 14 is configured to output the atomized liquid F in the mixing space 111 toward the substrate 100 to process the substrate 100.

在本發明之第一實施例之中,氣體供應單元20位於流體供應單元10的外側,氣體供應單元20之頂端可連接一外部的管路200b,外部的管路200b可以朝氣體供應單元20內傳輸第一氣體B。氣體供應單元20包括一氣體輸出部21和一外環體22。氣體輸出部21連接外環體22。氣體輸出部21為一環形結構,且氣體輸出部21環繞第一流體輸出部14,氣體輸出部21用以朝基板100輸出管路200b所供應的第一氣體B。由環形結構的氣體輸出部21輸出的第一氣體B是一環型氣流,環型氣流例如為以流體供應裝置1中心為圓心且向外呈放射狀流動的氣流。氣體輸出部21和基板100之間具有一第二間距D,第二間距D介於3公釐至6公釐之間,當第一氣體B自非平面區域110上方流過時,可於凹槽內形成一負壓狀態,但第二間距D的大小並不以此為限,其可依設計需求而改變。外環體22為一鐘形結構並位於本體11的外側,外環體22之鐘形結構環繞本體11之鐘形結構。外環體22和本體11之間具有一第一間距C,第一間距C界定第一氣體B從氣體供應單元20流出的一氣體流量。In the first embodiment of the present invention, the gas supply unit 20 is located outside the fluid supply unit 10, and the top end of the gas supply unit 20 can be connected to an external pipe 200b, and the external pipe 200b can face into the gas supply unit 20. The first gas B is transmitted. The gas supply unit 20 includes a gas output portion 21 and an outer ring body 22. The gas output portion 21 is connected to the outer ring body 22. The gas output portion 21 has a ring structure, and the gas output portion 21 surrounds the first fluid output portion 14. The gas output portion 21 is configured to output the first gas B supplied by the pipeline 200 b toward the substrate 100. The first gas B output by the gas output portion 21 of the ring structure is a ring-shaped airflow. The ring-shaped airflow is, for example, an airflow that flows radially around the center of the fluid supply device 1. There is a second distance D between the gas output portion 21 and the substrate 100. The second distance D is between 3 mm and 6 mm. When the first gas B flows over the non-planar area 110, it can be in the groove. A negative pressure state is formed inside, but the size of the second distance D is not limited to this, and it can be changed according to design requirements. The outer ring body 22 is a bell-shaped structure and is located outside the body 11. The bell-shaped structure of the outer ring body 22 surrounds the bell-shaped structure of the body 11. There is a first distance C between the outer ring body 22 and the body 11. The first distance C defines a gas flow rate of the first gas B flowing from the gas supply unit 20.

需注意的是,本發明之管路200、200a、200b分別連接至外部的電腦(圖未示),且各個管路200、200a、200b可以受電腦控制而依照製程需求以各自停止供應氣體或液體,以使流體供應裝置1對基板100提供不同種類的製程。受電腦控制並非本案之重點,故不多做贅述。It should be noted that the pipelines 200, 200a, and 200b of the present invention are connected to external computers (not shown), and each of the pipelines 200, 200a, and 200b can be controlled by the computer to stop supplying gas or Liquid, so that the fluid supply device 1 provides different kinds of processes to the substrate 100. Computer control is not the focus of this case, so I won't go into details.

在本發明之第一實施例中,當要處理基板100表面,並去除卡在非平面區域110內的雜質T、T1時,可以使用流體供應裝置1於基板100上方執行一連續製程,使得非平面區域110依序接受環形氣流吹拂之噴除製程、霧化液體F形成的濕式製程,和環形氣流形成的移除製程等三個階段的製程。In the first embodiment of the present invention, when the surface of the substrate 100 is to be processed and the impurities T, T1 stuck in the non-planar area 110 are removed, a continuous process can be performed over the substrate 100 using the fluid supply device 1 so that the non- The planar area 110 sequentially receives a three-stage process such as a spraying process in which a circular air flow is blown, a wet process in which the atomized liquid F is formed, and a removal process in which the circular air flow is formed.

首先,如圖1和圖2所示,當開始運用流體供應裝置1於基板100上方執行一連續製程時,流體供應裝置1會先進行噴除製程。在噴除製程中,只有管路200b會傳輸第一氣體B,管路200、200a皆不會傳輸任何氣體或液體,因此此刻的流體供應單元10會暫停供應霧化液體F,故霧化液體F此刻不會接觸基板100及其非平面區域110。接收到第一氣體B後的氣體供應單元20會讓第一氣體B在外環體22之內流向氣體輸出部21,並使得第一氣體B從氣體輸出部21輸出,且沿著相對基板100之水平方向S流動。根據白努利原理,沿著水平方向S流動的第一氣體B在經過非平面區域110之凹槽周圍時,會因為壓力差而對非平面區域110產生吸引力,而非平面區域110內的空氣會受到該吸引力影響而被移除至凹槽外,並使該非平面區域110內部形成負壓狀態。當第一氣體B造成的吸引力將非平面區域110的空氣移除時,亦會連帶著移除非平面區域110內的一部分雜質T,也就是說,第一氣體B造成的吸引力可以初步的吸走一部分雜質T,使得雜質T沿著雜質移動方向U離開非平面區域110。本發明所述之空氣移除為透過第一氣體B的吸引力將空氣自凹槽內拉引至凹槽外。First, as shown in FIG. 1 and FIG. 2, when the fluid supply device 1 is started to perform a continuous process on the substrate 100, the fluid supply device 1 first performs a spray-out process. In the spraying process, only the pipe 200b will transmit the first gas B, and the pipes 200 and 200a will not transmit any gas or liquid. Therefore, the fluid supply unit 10 at this moment will temporarily stop supplying the atomized liquid F, so the atomized liquid F will not touch the substrate 100 and its non-planar area 110 at this moment. The gas supply unit 20 after receiving the first gas B allows the first gas B to flow toward the gas output portion 21 within the outer ring body 22, and causes the first gas B to be output from the gas output portion 21 and along the opposite substrate 100 The horizontal direction S flows. According to Bernoulli's principle, when the first gas B flowing in the horizontal direction S passes around the groove of the non-planar region 110, it will attract the non-planar region 110 due to the pressure difference, rather than the non-planar region 110. The air will be removed from the groove due to the attractive force, and a negative pressure will be formed inside the non-planar region 110. When the attraction caused by the first gas B removes the air in the non-planar region 110, a part of the impurities T in the non-planar region 110 is also removed, that is, the attraction caused by the first gas B can be preliminary A part of the impurities T is sucked away, so that the impurities T leave the non-planar region 110 along the impurity moving direction U. The air removal according to the present invention is to draw the air from the inside of the groove to the outside of the groove through the attractive force of the first gas B.

在噴除製程後,會進行濕式製程,如圖1和圖3所示,在濕式製程中,管路200b不會傳輸第一氣體B,而管路200、200a會分別傳輸第二氣體A和液體L,第二氣體A和液體L會於混合空間111混合,而形成霧化液體F,且霧化液體F會從第一流體輸出部14朝基板100輸出。當第一流體輸出部14朝基板100輸出霧化液體F時,霧化液體F會沿著霧化液體流動方向J在基板100上移動。當霧化液體F移動至靠近非平面區域110時,藉由非平面區域110之凹槽內的負壓狀態,霧化液體F也會移動至非平面區域110內,以移動非平面區域110內的其餘雜質T1,使得非平面區域110內的其餘雜質T1鬆動而容易被帶離非平面區域110。如此一來,即完成濕式製程。After the spraying process, a wet process will be performed, as shown in Figures 1 and 3. In the wet process, the pipeline 200b will not transmit the first gas B, and the pipelines 200 and 200a will respectively transmit the second gas. A and liquid L, the second gas A and liquid L are mixed in the mixing space 111 to form an atomized liquid F, and the atomized liquid F is output from the first fluid output portion 14 toward the substrate 100. When the first fluid output portion 14 outputs the atomized liquid F toward the substrate 100, the atomized liquid F moves along the atomized liquid flow direction J on the substrate 100. When the atomized liquid F moves closer to the non-planar region 110, the atomized liquid F also moves into the non-planar region 110 by the negative pressure state in the groove of the non-planar region 110 to move the non-planar region 110. The remaining impurities T1 in the non-planar region 110 are loosened and easily taken away from the non-planar region 110. In this way, the wet process is completed.

在濕式製程後,會進行移除製程,如圖1和圖4所示,在移除製程,只有管路200b會傳輸第一氣體B,管路200、200a皆不會傳輸任何氣體或液體。接收到第一氣體B後的氣體供應單元20會讓第一氣體B在外環體22之內流向氣體輸出部21,並使得第一氣體B從氣體輸出部21輸出,且沿著相對基板100之水平方向S流動。根據白努利原理,沿著水平方向S流動的第一氣體B之環型氣流,會對非平面區域110產生吸引力,而非平面區域110內的含有其餘雜質T1的霧化液體F便會受到吸引力影響而被移除至凹槽外。如此一來,經過連續製程後,基板100可以得到有效的處理。After the wet process, the removal process will be performed, as shown in Figures 1 and 4. In the removal process, only the pipeline 200b will transmit the first gas B, and the pipelines 200 and 200a will not transmit any gas or liquid. . The gas supply unit 20 after receiving the first gas B allows the first gas B to flow toward the gas output portion 21 within the outer ring body 22, and causes the first gas B to be output from the gas output portion 21 and along the opposite substrate 100 The horizontal direction S flows. According to the Bernoulli principle, the ring-shaped gas flow of the first gas B flowing in the horizontal direction S will attract the non-planar region 110, and the atomized liquid F in the non-planar region 110 containing the remaining impurities T1 will Under the influence of attraction, it is removed out of the groove. In this way, the substrate 100 can be effectively processed after a continuous process.

於上述噴除製程、濕式製程以及移除製程係分開說明,流體供應裝置1實際運作時,可同時接續進行上述三種製程,例如環形氣流和霧化液體F同時供應至基板100表面,以基板100的其中一個凹槽舉例,如圖5所示,當流體供應裝置1進行單一行程移動時,會先透過環形氣流將凹槽形成負壓狀態且將一部份的雜質T移除;接著如圖6所示,流體供應裝置1繼續移動且將霧化液體F供應至凹槽以進行處理;最後如圖7所示,流體供應裝置1繼續移動以將凹槽內含有其餘部分雜質T1的霧化液體F移除,在流體供應裝置1的單一行程中即可同時達到三種處理的效果。The above-mentioned spraying process, wet process, and removal process are separately described. When the fluid supply device 1 is in actual operation, the above three processes can be continued at the same time. For example, the annular air flow and the atomizing liquid F are simultaneously supplied to the surface of the substrate 100, and the substrate An example of one of the grooves 100, as shown in FIG. 5, when the fluid supply device 1 performs a single stroke movement, the groove is first formed into a negative pressure state through a circular air flow and a part of the impurities T is removed; As shown in FIG. 6, the fluid supply device 1 continues to move and supplies the atomized liquid F to the groove for processing; finally, as shown in FIG. 7, the fluid supply device 1 continues to move to remove the mist containing the remaining impurities T1 in the groove. With the removal of the chemical liquid F, three processing effects can be achieved simultaneously in a single stroke of the fluid supply device 1.

值得一提的是,若是基板具有較深或較窄口的溝槽時,空氣會佔據凹槽的大部分空間,使霧化液體不易進入凹槽內;即便有霧化液體進入凹槽,也因凹槽的較深或較窄之結構而無法有效的將霧化液體自凹槽排出。然而,本發明的流體供應裝置1透過上述之噴除製程、濕式製程以及移除製程即可有效處理基板100,有效的將霧化液體自凹槽排出。It is worth mentioning that if the substrate has deeper or narrower grooves, air will occupy most of the space in the groove, making it difficult for atomized liquid to enter the groove; even if atomized liquid enters the groove, Due to the deeper or narrower structure of the groove, the atomized liquid cannot be effectively discharged from the groove. However, the fluid supply device 1 of the present invention can effectively process the substrate 100 through the above-mentioned spraying process, wet process, and removal process, and effectively discharge the atomized liquid from the groove.

以下請一併參考圖8關於本發明第二實施例之流體供應裝置。圖8係本發明之第二實施例之流體供應裝置之示意圖。In the following, please refer to FIG. 8 for a fluid supply device according to a second embodiment of the present invention. FIG. 8 is a schematic diagram of a fluid supply device according to a second embodiment of the present invention.

如圖8所示,第二實施例與第一實施例的差別在於,在第二實施例之流體供應裝置1a中,基板100a的其中一個非平面區域110a是凸緣,且有部分的雜質T1容易卡在非平面區域110a之凸緣的底部。第二實施例之液體輸入端13a是直接連接至第一流體輸出部14a,因此氣體輸入端12提供的第二氣體A會直接流至第一流體輸出部14a,液體輸入端13a提供的液體L也會直接流至第一流體輸出部14a。第二氣體A和液體L會於第一流體輸出部14a混合而形成霧化液體F,以輸出至基板100。輸出的霧化液體F仍可清洗基板100表面,並處理非平面區域110之凹槽,以及處理非平面區域110a之凸緣,以移動非平面區域110a之凸緣底部的雜質T1,使得雜質T1脫離非平面區域110a。As shown in FIG. 8, the difference between the second embodiment and the first embodiment is that in the fluid supply device 1 a of the second embodiment, one of the non-planar areas 110 a of the substrate 100 a is a flange, and there are some impurities T1 Easily caught on the bottom of the flange of the non-planar area 110a. The liquid input end 13a of the second embodiment is directly connected to the first fluid output part 14a, so the second gas A provided by the gas input end 12 will flow directly to the first fluid output part 14a, and the liquid L provided by the liquid input end 13a It also flows directly to the first fluid output portion 14a. The second gas A and the liquid L are mixed with the first fluid output portion 14 a to form an atomized liquid F for output to the substrate 100. The output atomized liquid F can still clean the surface of the substrate 100 and process the grooves of the non-planar area 110 and the flange of the non-planar area 110a to move the impurity T1 at the bottom of the flange of the non-planar area 110a so that the impurity T1 Out of the non-planar area 110a.

藉由本發明之流體供應裝置1、1a,可以對基板100進行噴除製程、濕式製程,和移除製程等三個階段的處理製程,以有效處理基板100表面及其非平面區域110之凹槽或非平面區域110a之凸緣。另外,上述三種製程可同時進行或是依需求分開進行,以同時進行來說,流體供應裝置1、1a於基板100上進行單一行程時,即可同時達到三種處理效果,而無須使用高壓蒸氣來進行基板的處理。With the fluid supply device 1 and 1a of the present invention, the substrate 100 can be processed in three stages, such as a spray process, a wet process, and a removal process, so as to effectively treat the surface of the substrate 100 and the recesses of the non-planar area 110 thereof. The groove or flange of the non-planar area 110a. In addition, the above three processes can be performed simultaneously or separately according to requirements. For the same time, when the fluid supply device 1 and 1a perform a single stroke on the substrate 100, three processing effects can be achieved at the same time without using high pressure steam. The substrate is processed.

本發明所提及之基板100可為載板形式、晶圓形式、晶片形式等,並且可為圓型、方型,並不以此為限。並且藉由本發明之流體供應裝置1、1a可應用於基板濕製程(清洗、蝕刻等),例:單基板濕製程、多基板濕製程、單一方晶片錫球下金屬蝕刻、薄化晶圓支撐/剝離、貼合/剝離製程、碳化矽再生晶圓、再生矽晶圓等,並不以此為限。The substrate 100 mentioned in the present invention may be a carrier board form, a wafer form, a wafer form, and the like, and may be a round shape, a square shape, and is not limited thereto. And the fluid supply device 1 and 1a of the present invention can be applied to substrate wet processes (cleaning, etching, etc.), for example: single substrate wet process, multi-substrate wet process, single-side wafer metal ball etching, thin wafer support / Peeling, bonding / peeling process, silicon carbide recycled wafers, recycled silicon wafers, etc. are not limited to this.

需注意的是,上述僅為實施例,而非限制於實施例。譬如 此不脫離本發明基本架構者,皆應為本專利所主張之權利範圍,而應以專利申請範圍為準。It should be noted that the above are merely examples, and are not limited to the examples. For example, those who do not depart from the basic structure of the present invention should all be within the scope of the rights claimed by the patent, and the scope of the patent application shall prevail.

1、1a‧‧‧流體供應裝置1.1a‧‧‧fluid supply device

10‧‧‧流體供應單元10‧‧‧ Fluid Supply Unit

11‧‧‧本體11‧‧‧ Ontology

111‧‧‧混合空間111‧‧‧ mixed space

12‧‧‧氣體輸入端12‧‧‧gas input

13、13a‧‧‧液體輸入端13, 13a‧‧‧Liquid input terminal

14、14a‧‧‧第一流體輸出部14, 14a‧‧‧First fluid output

20‧‧‧氣體供應單元20‧‧‧Gas supply unit

21‧‧‧氣體輸出部21‧‧‧Gas output department

22‧‧‧外環體22‧‧‧ outer ring

100、100a‧‧‧基板100, 100a‧‧‧ substrate

110、110a‧‧‧非平面區域110, 110a‧‧‧ non-planar area

200、200a、200b‧‧‧管路200, 200a, 200b ‧‧‧ pipeline

A‧‧‧第二氣體A‧‧‧Second gas

B‧‧‧第一氣體B‧‧‧First Gas

D‧‧‧第一間距C第二間距D‧‧‧First pitch C Second pitch

F‧‧‧霧化液體F‧‧‧Atomized liquid

J‧‧‧霧化液體流動方向J‧‧‧Atomizing liquid flow direction

L‧‧‧液體L‧‧‧Liquid

S‧‧‧水平方向S‧‧‧Horizontal

T、T1‧‧‧雜質T, T1‧‧‧ impurities

U‧‧‧雜質移動方向U‧‧‧ Impurity moving direction

圖1係本發明之第一實施例之流體供應裝置之示意圖。 圖2係本發明之第一實施例之進行噴除製程時的流體供應裝置之示意圖。 圖3係本發明之第一實施例之進行濕式製程時的流體供應裝置之示意圖。 圖4係本發明之第一實施例之再次進行噴除製程時的流體供應裝置之示意圖。 圖5係本發明之第一實施例之接續進行噴除製程、濕式製程以及移除製程時的第一步驟的流體供應裝置之示意圖。 圖6係本發明之第一實施例之接續進行噴除製程、濕式製程以及移除製程時的第二步驟的流體供應裝置之示意圖。 圖7係本發明之第一實施例之接續進行噴除製程、濕式製程以及移除製程時的第三步驟的流體供應裝置之示意圖。 圖8係本發明之第二實施例之流體供應裝置之示意圖。FIG. 1 is a schematic diagram of a fluid supply device according to a first embodiment of the present invention. FIG. 2 is a schematic diagram of a fluid supply device during a spray-out process according to the first embodiment of the present invention. FIG. 3 is a schematic diagram of a fluid supply device during a wet process according to the first embodiment of the present invention. FIG. 4 is a schematic diagram of a fluid supply device when the spraying process is performed again according to the first embodiment of the present invention. FIG. 5 is a schematic diagram of a fluid supply device in the first step of the spraying process, the wet process, and the removing process in the first embodiment of the present invention. FIG. 6 is a schematic diagram of a fluid supply device in the second step of the first embodiment of the present invention, which successively performs a spraying process, a wet process, and a removing process. FIG. 7 is a schematic diagram of a fluid supply device in the third step of the spraying process, the wet process, and the removing process in the first embodiment of the present invention. FIG. 8 is a schematic diagram of a fluid supply device according to a second embodiment of the present invention.

Claims (12)

一種流體供應裝置,用以處理一基板,該基板包括一非平面區域,該流體供應裝置包括:一流體供應單元,用以朝該基板輸出一流體;以及一氣體供應單元,位於該流體供應單元的外側,該氣體供應單元包括一氣體輸出部,該氣體輸出部用以朝該基板輸出一第一氣體;其中當該流體供應單元朝該基板輸出該流體時,會在該非平面區域上形成一濕式製程;當該氣體輸出部朝該基板輸出該第一氣體,且該第一氣體沿著相對該基板的一水平方向流動時,該第一氣體會在該非平面區域上形成一移除製程,以移除該流體。A fluid supply device for processing a substrate. The substrate includes a non-planar area. The fluid supply device includes: a fluid supply unit for outputting a fluid toward the substrate; and a gas supply unit located in the fluid supply unit. Outside, the gas supply unit includes a gas output portion for outputting a first gas toward the substrate; wherein when the fluid supply unit outputs the fluid toward the substrate, a non-planar area is formed. Wet process; when the gas output section outputs the first gas toward the substrate, and the first gas flows in a horizontal direction relative to the substrate, the first gas forms a removal process on the non-planar area To remove the fluid. 如申請專利範圍第1項所述之流體供應裝置,其中該氣體供應單元更包括一外環體,該流體供應單元更包括一本體,該外環體位於該本體的外側,且該外環體和該本體之間具有一第一間距,該第一間距界定該第一氣體從該氣體供應單元流出的一氣體流量。The fluid supply device according to item 1 of the scope of patent application, wherein the gas supply unit further includes an outer ring body, the fluid supply unit further includes a body, the outer ring body is located outside the body, and the outer ring body There is a first distance from the body, and the first distance defines a gas flow rate of the first gas flowing from the gas supply unit. 如申請專利範圍第2項所述之流體供應裝置,其中該氣體供應單元供應的該第一氣體是一環型氣流。The fluid supply device according to item 2 of the scope of patent application, wherein the first gas supplied by the gas supply unit is a ring-shaped gas flow. 如申請專利範圍第3項所述之流體供應裝置,其中當該流體供應裝置於該基板上方執行一連續製程時,該非平面區域將依序接受該環形氣流形成的一噴除製程、該流體形成的該濕式製程,和該環形氣流形成的該移除製程。The fluid supply device according to item 3 of the scope of patent application, wherein when the fluid supply device performs a continuous process above the substrate, the non-planar area will sequentially receive a jetting process formed by the annular air flow, and the fluid formation The wet process, and the removal process formed by the annular airflow. 如申請專利範圍第3項所述之流體供應裝置,其中當該流體供應裝置於該基板上方執行一連續製程時,該環型氣流先將未被該流體接觸過的該非平面區域的一空氣移除,並使該非平面區域形成一負壓狀態;接著,該流體供應單元將該流體提供至該基板,該流體藉由該負壓狀態而移動至該非平面區域,以對該非平面區域進行該濕式製程;接著,該環型氣流將該非平面區域的該流體移除。The fluid supply device according to item 3 of the scope of patent application, wherein when the fluid supply device performs a continuous process above the substrate, the annular airflow first moves an air in the non-planar area that has not been contacted by the fluid. And removing the non-planar region into a negative pressure state; then, the fluid supply unit supplies the fluid to the substrate, and the fluid moves to the non-planar region by the negative pressure state to perform the wet operation on the non-planar region. Process; then, the annular gas stream removes the fluid from the non-planar area. 如申請專利範圍第5項所述之流體供應裝置,其中該環型氣流將該非平面區域的該空氣移除,並移除該非平面區域內的一部分雜質,該流體移動至該非平面區域以移動該非平面區域內的其餘雜質;接著,該環型氣流將該非平面區域內的含有該其餘雜質的該流體移除。The fluid supply device according to item 5 of the patent application scope, wherein the annular airflow removes the air in the non-planar area and removes a part of impurities in the non-planar area, and the fluid moves to the non-planar area to move the non-planar area The remaining impurities in the planar region; then, the annular gas stream removes the fluid containing the remaining impurities in the non-planar region. 如申請專利範圍第1項所述之流體供應裝置,其中該流體供應單元包括一本體、一氣體輸入端、一液體輸入端以及一第一流體輸出部,該氣體輸入端連接該本體,用以輸入一第二氣體至該本體內,該液體輸入端連接該本體,用以輸入一液體至該本體內,該液體和該第二氣體混合而成該流體,該第一流體輸出部用以朝該基板輸出該流體,該流體為一霧化液體。The fluid supply device according to item 1 of the scope of patent application, wherein the fluid supply unit includes a body, a gas input end, a liquid input end, and a first fluid output part, and the gas input end is connected to the body for A second gas is input into the body, and the liquid input end is connected to the body for inputting a liquid into the body. The liquid and the second gas are mixed to form the fluid, and the first fluid output portion is used to face the body. The substrate outputs the fluid, which is an atomized liquid. 如申請專利範圍第7項所述之流體供應裝置,其中該本體包括一混合空間,該第二氣體和該液體於該混合空間混合形成該霧化液體,該霧化液體由該第一流體輸出部輸出至該基板。The fluid supply device according to item 7 of the patent application scope, wherein the body includes a mixing space, the second gas and the liquid are mixed in the mixing space to form the atomized liquid, and the atomized liquid is output by the first fluid Output to this substrate. 如申請專利範圍第1項所述之流體供應裝置,其中當該流體供應裝置進行該濕式製程時,該流體供應單元將該流體提供至該基板的該非平面區域,且該氣體供應單元暫停供應該第一氣體。The fluid supply device according to item 1 of the patent application scope, wherein when the fluid supply device performs the wet process, the fluid supply unit supplies the fluid to the non-planar area of the substrate, and the gas supply unit suspends supply Should be the first gas. 如申請專利範圍第1項所述之流體供應裝置,其中當該流體供應裝置進行一噴除製程時,該氣體供應單元將該第一氣體沿著相對該基板之該水平方向流動,以將該非平面區域內的一空氣移除,且該流體供應單元暫停供應該流體。The fluid supply device according to item 1 of the scope of the patent application, wherein when the fluid supply device performs a spraying process, the gas supply unit flows the first gas in the horizontal direction relative to the substrate, so that the non- An air in the flat area is removed, and the fluid supply unit suspends the supply of the fluid. 如申請專利範圍第1項所述之流體供應裝置,其中該氣體輸出部和該基板之間具有一第二間距,該第二間距介於3公釐至6公釐之間。The fluid supply device according to item 1 of the scope of patent application, wherein the gas output portion and the substrate have a second distance therebetween, and the second distance is between 3 mm and 6 mm. 如申請專利範圍第1項所述之流體供應裝置,其中該非平面區域是一凸緣或一凹槽。The fluid supply device according to item 1 of the patent application scope, wherein the non-planar area is a flange or a groove.
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