CN109686678B - Fluid supply device - Google Patents
Fluid supply device Download PDFInfo
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- CN109686678B CN109686678B CN201810897240.4A CN201810897240A CN109686678B CN 109686678 B CN109686678 B CN 109686678B CN 201810897240 A CN201810897240 A CN 201810897240A CN 109686678 B CN109686678 B CN 109686678B
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- gas
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- fluid supply
- supply unit
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- 239000012530 fluid Substances 0.000 title claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 85
- 239000007788 liquid Substances 0.000 claims description 63
- 239000012535 impurity Substances 0.000 claims description 21
- 238000010924 continuous production Methods 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Nozzles (AREA)
Abstract
A fluid supply apparatus for processing a substrate includes a non-planar region. The fluid supply device comprises a fluid supply unit and a gas supply unit. The fluid supply unit is used for outputting fluid towards the substrate. The gas supply unit is located outside the fluid supply unit and includes a gas output portion for outputting a first gas toward the substrate. Forming a wet process on the non-planar area when the fluid supply unit outputs the fluid toward the substrate; when the gas output part outputs the first gas towards the substrate and the first gas flows along a horizontal direction opposite to the substrate, the first gas forms a removing process on the non-planar area to remove the fluid.
Description
Technical Field
The present invention relates to a fluid supply apparatus, and more particularly, to a fluid supply apparatus for efficiently processing a surface of a substrate.
Background
In a substrate process, a surface of a substrate is often cleaned to remove impurities on the surface of the substrate. In cleaning the substrate surface, the conventional nozzle is usually used to supply a flowing liquid to the wafer surface by utilizing the principle of high-speed flow of compressed air, or the liquid is formed into high-pressure vapor by a vapor generator and then the high-pressure vapor is supplied to the substrate surface. This allows the flowing liquid or high pressure vapor to clean the substrate surface.
However, the nozzles supply liquid or gas to the substrate surface with a high-speed liquid rinse, and impurities may remain in the trench when the substrate to be processed has a deeper trench. In addition, the high-pressure steam is generated by the high-temperature high-pressure steam engine, and the supply process needs precise pressure control to avoid the risk of explosion caused by over-high pressure, so the risk of the high-pressure steam production process is relatively increased, and the high-temperature high-pressure steam engine needs to be additionally purchased, so the process cost is relatively increased.
Therefore, there is a need for a fluid ejection nozzle that can effectively process a substrate surface and a trench of a substrate.
Disclosure of Invention
The main object of the present invention is to provide a fluid supply apparatus that can efficiently process a substrate surface.
To achieve the above objects, the fluid supply apparatus of the present invention is used for processing a substrate, the substrate including a non-planar region. The fluid supply device comprises a fluid supply unit and a gas supply unit. The fluid supply unit is used for outputting a fluid to the substrate. The gas supply unit is located outside the fluid supply unit and includes a gas output portion for outputting a first gas toward the substrate. Forming a wet process on the non-planar area when the fluid supply unit outputs the fluid toward the substrate; when the gas output part outputs the first gas towards the substrate and the first gas flows along a horizontal direction opposite to the substrate, the first gas forms a removing process on the non-planar area to remove the fluid.
According to an embodiment of the present invention, the gas supply unit further includes an outer ring body, the outer ring body is located outside the body, and a first distance is provided between the outer ring body and the body, the first distance defining a gas flow rate of the first gas flowing out of the gas supply unit.
According to an embodiment of the present invention, the first gas supplied by the gas supply unit is a circular gas flow.
According to an embodiment of the present invention, when the fluid supply apparatus performs a continuous process on the substrate, the non-planar area is sequentially subjected to a blowout process for forming the annular gas flow, a wet process for forming the fluid, and a removal process for forming the annular gas flow.
According to an embodiment of the present invention, when the fluid supply apparatus performs a continuous process on the substrate, the annular gas flow removes air from the non-planar area that is not contacted by the fluid, and forms a negative pressure state in the non-planar area; then, the fluid supply unit provides fluid to the substrate, and the fluid moves to the non-planar area through a negative pressure state so as to carry out a wet process on the non-planar area; the annular gas flow then removes the fluid from the non-planar area.
According to one embodiment of the present invention, wherein the annular gas flow removes air from the non-planar region and removes a portion of the impurities in the non-planar region, the fluid moves to the non-planar region to move the remaining impurities in the non-planar region; the annular gas flow then removes the remaining contaminant-containing fluid in the non-planar region.
According to an embodiment of the present invention, the fluid supply unit includes a body, a gas input end, a liquid input end and a first fluid output portion, the gas input end is connected to the body for inputting a second gas into the body, the liquid input end is connected to the body for inputting a liquid into the body, the liquid and the second gas are mixed to form a fluid, the first fluid output portion is used for outputting the fluid toward the substrate, and the fluid is an atomized liquid.
According to an embodiment of the present invention, the body includes a mixing space, the second gas and the liquid are mixed in the mixing space to form the atomized liquid, and the atomized liquid is output from the first fluid output portion to the substrate.
According to an embodiment of the present invention, when the fluid supply apparatus performs a wet process, the fluid supply unit supplies the fluid to the non-planar area of the substrate, and the gas supply unit suspends the supply of the first gas.
According to an embodiment of the present invention, when the fluid supply apparatus performs a spraying process, the gas supply unit flows the first gas in a horizontal direction with respect to the substrate to remove air in the non-planar area, and the fluid supply unit suspends supplying the fluid.
According to an embodiment of the present invention, the gas output portion and the substrate have a second distance therebetween, and the second distance is between 3 mm and 6 mm.
According to an embodiment of the invention, the non-planar area is a flange or a groove.
The fluid supply device of the invention can carry out three stages of continuous processes of spraying, wet-type process, removing process and the like on the substrate so as to effectively process the plane area of the surface of the substrate, the groove of the non-plane area or the flange of the non-plane area and the like and the non-plane structure. In addition, the three processes can be carried out simultaneously or separately according to requirements; in the simultaneous process, the fluid supply device can achieve three processing effects simultaneously when performing a single stroke on the substrate.
Drawings
Fig. 1 is a schematic view of a fluid supply apparatus according to a first embodiment of the present invention.
Fig. 2 is a schematic view of a fluid supply apparatus for performing a spray-off process according to a first embodiment of the present invention.
Fig. 3 is a schematic view of a fluid supply apparatus for performing a wet process according to a first embodiment of the present invention.
Fig. 4 is a schematic view of the fluid supply apparatus when the spraying-out process is performed again according to the first embodiment of the present invention.
Fig. 5 is a schematic view of the fluid supply apparatus of the first embodiment of the present invention, which performs the first step of the spray-out process, the wet process and the removal process sequentially.
Fig. 6 is a schematic view of the fluid supply apparatus of the second step in the sequential performing of the spraying-out process, the wet process and the removing process according to the first embodiment of the invention.
Fig. 7 is a schematic view of the fluid supply apparatus sequentially performing the third step of the spray-out process, the wet process and the removal process according to the first embodiment of the invention.
Fig. 8 is a schematic view of a fluid supply apparatus according to a second embodiment of the present invention.
Wherein the reference numerals are:
Mixing space 111
Non-planar regions 110, 110a
Second gas A
First gas B
First pitch C second pitch D
Atomized liquid F
Direction of flow J of the atomized liquid
Liquid L
Horizontal direction S
Impurity T, T1
Direction of movement of impurities U
Detailed Description
In order to make the technical content of the present invention more comprehensible, preferred embodiments are described below.
Referring to fig. 1 to 7, a fluid supply apparatus according to a first embodiment of the present invention is described. Fig. 1 is a schematic view of a fluid supply apparatus according to a first embodiment of the present invention; FIG. 2 is a schematic view of a fluid supply apparatus for performing a spray removal process according to a first embodiment of the present invention; fig. 3 is a schematic view of a fluid supply apparatus for performing a wet process according to a first embodiment of the present invention; FIG. 4 is a schematic view of the fluid supply apparatus when the spraying process is performed again according to the first embodiment of the present invention; FIG. 5 is a schematic view of a fluid supply apparatus for performing a first step of a spray-out process, a wet process and a removal process sequentially according to a first embodiment of the present invention; FIG. 6 is a schematic view of the fluid supply apparatus of the second step of the first embodiment of the present invention, which is performed in succession with the spray-out process, the wet process and the removal process; fig. 7 is a schematic view of the fluid supply apparatus sequentially performing the third step of the spray-out process, the wet process and the removal process according to the first embodiment of the invention.
Referring to fig. 1, a fluid supply apparatus 1 according to a first embodiment of the present invention is used for processing a substrate 100. The substrate 100 includes a planar region and a non-planar region 110, the non-planar region 110 is a groove or a flange, the groove is exemplified in the embodiment, and the groove has a plurality of impurities T, T1, such as particles (particles). The fluid supply apparatus 1 includes a fluid supply unit 10 and a gas supply unit 20.
As shown in fig. 1 to 3, in a first embodiment of the present invention, a fluid supply unit 10 is used for supplying a fluid to a substrate 100 to process a surface of the substrate 100, wherein the fluid is exemplified by an atomized liquid F. The fluid supply unit 10 is exemplified by a two-fluid nozzle, and the fluid supply unit 10 includes a body 11, a gas input end 12, a liquid input end 13 and a first fluid output portion 14. The body 11 has a bell-shaped structure, and the bell-shaped structure of the body 11 includes a mixing space 111 therein. The gas input 12 is connected to the body 11, and the gas input 12 can be connected to an external pipeline 200. The gas input end 12 is used for receiving the second gas a supplied by the pipeline 200, so as to input the second gas a into the mixing space 111 of the body 11. The liquid input end 13 is connected with the body 11, and the liquid input end 13 can be connected with an external pipeline 200 a; the liquid input end 13 is used for receiving the liquid L supplied by the pipeline 200a, so as to input the liquid L into the mixing space 111 of the body 11; the second gas a and the liquid L are mixed in the mixing space 111 to form the atomized liquid F. The first fluid output portion 14 is disposed at the bottom of the body 11 and faces the substrate 100, and the first fluid output portion 14 communicates with the mixing space 111. The first fluid output portion 14 outputs the atomized liquid F in the mixing space 111 toward the substrate 100 to process the substrate 100.
In the first embodiment of the present invention, the gas supply unit 20 is located outside the fluid supply unit 10, the top end of the gas supply unit 20 can be connected to an external pipe 200B, and the external pipe 200B can transmit the first gas B into the gas supply unit 20. The gas supply unit 20 includes a gas output portion 21 and an outer ring body 22. The gas output portion 21 is connected to the outer ring body 22. The gas output portion 21 is an annular structure, and the gas output portion 21 surrounds the first fluid output portion 14, and the gas output portion 21 is used for outputting the first gas B supplied from the pipeline 200B toward the substrate 100. The first gas B output from the gas output portion 21 of the annular structure is a circular gas flow, for example, a gas flow radially flowing outward around the center of the fluid supply apparatus 1. The gas output portion 21 and the substrate 100 have a second distance D between 3 mm and 6 mm, and when the first gas B flows over the non-planar area 110, a negative pressure state may be formed in the groove, but the size of the second distance D is not limited thereto, and may be changed according to design requirements. The outer ring 22 is a bell-shaped structure and is located outside the body 11, and the bell-shaped structure of the outer ring 22 surrounds the bell-shaped structure of the body 11. The outer ring body 22 and the body 11 have a first distance C therebetween, which defines a gas flow rate of the first gas B flowing out of the gas supply unit 20.
It should be noted that the pipelines 200, 200a, 200b of the present invention are respectively connected to an external computer (not shown), and each pipeline 200, 200a, 200b can be controlled by the computer to stop supplying gas or liquid according to the process requirement, so that the fluid supply apparatus 1 can provide different kinds of processes to the substrate 100. The control by the computer is not the focus of the present application, and therefore, the detailed description thereof is omitted.
In the first embodiment of the present invention, when the surface of the substrate 100 is to be processed and the impurities T, T1 stuck in the non-planar area 110 are removed, a continuous process may be performed on the substrate 100 by using the fluid supply apparatus 1, such that the non-planar area 110 is sequentially subjected to three stages of a blowing process by the ring-shaped air flow, a wet process by the formation of the atomized liquid F, and a removal process by the formation of the ring-shaped air flow.
First, as shown in fig. 1 and 2, when the fluid supply apparatus 1 starts to perform a continuous process on the substrate 100, the fluid supply apparatus 1 performs a spraying process first. In the spraying process, only the pipe 200B transmits the first gas B, neither of the pipes 200 and 200a transmits any gas or liquid, so that the fluid supply unit 10 at this moment stops supplying the atomized liquid F, and the atomized liquid F does not contact the substrate 100 and the non-planar region 110 at this moment. The gas supply unit 20, which receives the first gas B, allows the first gas B to flow in the outer ring 22 toward the gas output portion 21, and allows the first gas B to flow in the horizontal direction S with respect to the substrate 100, while outputting the first gas B from the gas output portion 21. According to the bernoulli principle, when the first gas B flowing along the horizontal direction S passes around the groove of the non-planar area 110, an attractive force is generated on the non-planar area 110 due to the pressure difference, and the air in the non-planar area 110 is removed to the outside of the groove under the influence of the attractive force, so that a negative pressure state is formed inside the non-planar area 110. When the attraction force of the first gas B removes the air from the non-planar area 110, a portion of the impurities T in the non-planar area 110 is also removed, that is, the attraction force of the first gas B can initially suck away a portion of the impurities T, so that the impurities T leave the non-planar area 110 along the impurity moving direction U. The air removal according to the present invention is to draw air from inside the groove to outside the groove by the attraction of the first gas B.
After the spraying process, a wet process is performed, as shown in fig. 1 and 3, in the wet process, the pipe 200B does not transmit the first gas B, the pipes 200 and 200a transmit the second gas a and the liquid L, respectively, the second gas a and the liquid L are mixed in the mixing space 111 to form the atomized liquid F, and the atomized liquid F is output from the first fluid output portion 14 toward the substrate 100. When the first fluid output portion 14 outputs the atomized liquid F toward the substrate 100, the atomized liquid F moves on the substrate 100 along the atomized liquid flow direction J. When the atomized liquid F moves to be close to the non-planar area 110, the atomized liquid F also moves to the non-planar area 110 due to the negative pressure state in the groove of the non-planar area 110, so as to move the remaining impurities T1 in the non-planar area 110, so that the remaining impurities T1 in the non-planar area 110 are loosened and easily carried away from the non-planar area 110. Thus, the wet process is completed.
After the wet process, a removal process is performed, as shown in fig. 1 and 4, wherein only the pipe 200B transmits the first gas B, and neither of the pipes 200, 200a transmits any gas or liquid. The gas supply unit 20, which receives the first gas B, allows the first gas B to flow in the outer ring 22 toward the gas output portion 21, and allows the first gas B to flow in the horizontal direction S with respect to the substrate 100, while outputting the first gas B from the gas output portion 21. According to the Bernoulli principle, the circular gas flow of the first gas B flowing along the horizontal direction S generates an attractive force to the non-planar area 110, and the atomized liquid F containing the remaining impurities T1 in the non-planar area 110 is removed out of the groove under the influence of the attractive force. As such, the substrate 100 may be effectively processed through the continuous process.
As the spraying process, the wet process and the removing process are described separately, when the fluid supply apparatus 1 is actually operated, the three processes may be performed sequentially, for example, the annular gas flow and the atomized liquid F are simultaneously supplied to the surface of the substrate 100, and one of the grooves of the substrate 100 is used as an example, as shown in fig. 5, when the fluid supply apparatus 1 performs a single stroke movement, the annular gas flow first forms a negative pressure state in the groove and removes a portion of the impurities T; then, as shown in fig. 6, the fluid supply device 1 continues to move and supplies the atomized liquid F to the groove for processing; finally, as shown in fig. 7, the fluid supply device 1 continues to move to remove the atomized liquid F containing the remaining impurities T1 in the grooves, so that three processes can be simultaneously performed in a single stroke of the fluid supply device 1.
It is worth mentioning that if the substrate has a groove with a deeper or narrower opening, the air occupies most of the space of the groove, so that the atomized liquid is not easy to enter the groove; even if atomized liquid enters the groove, the atomized liquid cannot be effectively discharged from the groove due to the deeper or narrower structure of the groove. However, the fluid supply apparatus 1 of the present invention can effectively process the substrate 100 by the above-mentioned spraying process, wet process and removing process, and effectively discharge the atomized liquid from the grooves.
Referring to fig. 8, a fluid supply apparatus according to a second embodiment of the present invention is shown. Fig. 8 is a schematic view of a fluid supply apparatus according to a second embodiment of the present invention.
As shown in fig. 8, the second embodiment is different from the first embodiment in that in the fluid supply apparatus 1a of the second embodiment, one of the non-planar regions 110a of the base plate 100a is a flange, and a part of the impurity T1 is easily caught at the bottom of the flange of the non-planar region 110 a. The liquid input end 13a of the second embodiment is directly connected to the first fluid output portion 14a, so that the second gas A provided by the gas input end 12 directly flows to the first fluid output portion 14a, and the liquid L provided by the liquid input end 13a also directly flows to the first fluid output portion 14 a. The second gas A and the liquid L are mixed at the first fluid output portion 14a to form an atomized liquid F, which is output to the substrate 100. The output atomized liquid F can still wash the surface of the substrate 100 and treat the grooves of the non-planar region 110 and the flange of the non-planar region 110a to move the contaminant T1 at the bottom of the flange of the non-planar region 110a so that the contaminant T1 is free from the non-planar region 110 a.
With the fluid supply apparatus 1, 1a of the present invention, the substrate 100 may be subjected to a three-stage treatment process, such as a spraying process, a wet process, and a removing process, so as to effectively treat the surface of the substrate 100 and the grooves of the non-planar region 110 or the flanges of the non-planar region 110 a. In addition, the three processes may be performed simultaneously or separately as required, so that the fluid supply apparatuses 1 and 1a can simultaneously achieve three processing effects when performing a single stroke on the substrate 100 without using high pressure steam for processing the substrate.
The substrate 100 may be in the form of a carrier, a wafer, a chip, etc., and may be in the form of a circular or square, but not limited thereto. The fluid supply apparatus 1, 1a of the present invention can be applied to wet processes (cleaning, etching, etc.) of substrates, for example: single substrate wet process, multi-substrate wet process, single square chip under-ball metal etching, thinned wafer support/peel, lamination/peel process, silicon carbide recycled wafer, recycled silicon wafer, etc., but not limited thereto.
It should be noted that the above-mentioned embodiments are only examples, and are not limited to the examples. For example, without departing from the basic framework of the invention, the scope of the claims should be determined from the following claims.
Claims (12)
1. A fluid supply apparatus for processing a substrate, the substrate including a non-planar region, the fluid supply apparatus comprising:
a fluid supply unit for outputting a fluid toward the substrate; and
a gas supply unit located outside the fluid supply unit, the gas supply unit comprising a gas output part for outputting a first gas towards the substrate, the gas output part being arranged above and parallel to the substrate, so that the first gas flows through the substrate and flows along a horizontal direction of the substrate;
wherein a wet process is formed on the non-planar area when the fluid supply unit outputs the fluid toward the substrate; when the gas output part outputs the first gas towards the substrate and the first gas flows along the horizontal direction opposite to the substrate and passes around a groove of the non-planar area, an attractive force is generated on the non-planar area due to the pressure difference caused by the first gas, so that the air in the non-planar area is influenced by the attractive force and is removed out of the groove.
2. The fluid supply apparatus according to claim 1, wherein the gas supply unit further comprises an outer ring, the fluid supply unit further comprises a body, the outer ring is located outside the body, and a first distance is provided between the outer ring and the body, the first distance defining a gas flow rate of the first gas flowing out of the gas supply unit.
3. The fluid supply apparatus according to claim 2, wherein the first gas supplied by the gas supply unit is an annular gas flow.
4. The fluid delivery device of claim 3, wherein the non-planar area is to receive a purge process formed by the annular gas flow, the wet process formed by the fluid, and the removal process formed by the annular gas flow in sequence when the fluid delivery device performs a sequential process on the substrate.
5. The fluid supply apparatus of claim 3, wherein when the fluid supply apparatus performs a continuous process on the substrate, the toroidal gas flow removes air from the non-planar area that is not contacted by the fluid and forms a negative pressure in the non-planar area; then, the fluid supply unit provides the fluid to the substrate, and the fluid moves to the non-planar area by the negative pressure state so as to perform the wet process on the non-planar area; the annular gas flow then removes the fluid from the non-planar region.
6. The fluid supply apparatus according to claim 5, wherein the annular gas flow removes the air from the non-planar region and removes a portion of the impurities in the non-planar region, the fluid moving to the non-planar region to move the remaining impurities in the non-planar region; the annular gas flow then removes the fluid containing the remaining impurities from the non-planar region.
7. The fluid supply apparatus according to claim 1, wherein the fluid supply unit comprises a body, a gas input end connected to the body for inputting a second gas into the body, a liquid input end connected to the body for inputting a liquid into the body, the liquid and the second gas being mixed to form the fluid, and a first fluid output portion for outputting the fluid toward the substrate, the fluid being an atomized liquid.
8. The fluid supply apparatus according to claim 7, wherein the body comprises a mixing space, the second gas and the liquid are mixed in the mixing space to form the atomized liquid, and the atomized liquid is output from the first fluid output portion to the substrate.
9. The fluid supply apparatus according to claim 1, wherein the fluid supply unit supplies the fluid to the non-planar region of the substrate and the gas supply unit suspends the supply of the first gas when the fluid supply apparatus performs the wet process.
10. The fluid supply apparatus according to claim 1, wherein the gas supply unit flows the first gas in the horizontal direction relative to the substrate to remove air in the non-planar area when the fluid supply apparatus performs a blowing process, and the fluid supply unit suspends the supply of the fluid.
11. The fluid supply apparatus according to claim 1, wherein the gas output portion and the substrate have a second spacing therebetween, the second spacing being between 3 mm and 6 mm.
12. The fluid supply apparatus of claim 1 wherein the non-planar area is a flange or a groove.
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TW106135982 | 2017-10-19 | ||
TW106135982A TWI643683B (en) | 2017-10-19 | 2017-10-19 | Fluid providing device |
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CN109686678A CN109686678A (en) | 2019-04-26 |
CN109686678B true CN109686678B (en) | 2020-12-08 |
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CN (1) | CN109686678B (en) |
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JP2010177371A (en) * | 2009-01-28 | 2010-08-12 | Dainippon Screen Mfg Co Ltd | Method and device for treating substrate |
JP2015008267A (en) * | 2013-05-28 | 2015-01-15 | 東京エレクトロン株式会社 | Substrate cleaning device, substrate cleaning method, and storage medium |
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JPS57135708A (en) * | 1981-02-12 | 1982-08-21 | Shin Etsu Chem Co Ltd | Manufacturing of high purity silicon granule |
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KR20200068005A (en) | 2020-06-15 |
KR102130889B1 (en) | 2020-07-07 |
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