TWI617367B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The present invention is a substrate processing method, comprising: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on the upper surface of the substrate to form a liquid film covering the processing liquid on the upper surface of the substrate; After the film formation step, in order to form a liquid film removal region from the liquid film removal liquid film of the processing liquid, a first gas containing a low surface tension liquid vapor having a lower surface tension than the processing liquid is spit out from the first The first gas is ejected from the outlet, and the liquid film of the treatment liquid is blown with the first gas in a direction crossing the upper surface; The second gas ejecting step is a second gas ejecting step that is laterally and radially ejected from the annular second ejection opening which is different from the first ejection opening; and a liquid which expands the liquid film removal area. Film removal area expansion step.

Description

Substrate processing method and substrate processing device

The present invention relates to a substrate processing method and a substrate processing apparatus for processing a top surface of a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission display (FED), substrates for optical disks, substrates for magnetic disks, and magneto-optical disks Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

In the manufacturing step of the semiconductor device, a processing liquid is supplied to the surface of a substrate such as a semiconductor wafer, and the surface of the substrate is processed using the processing liquid.

For example, a monolithic substrate processing apparatus that processes substrates monolithically includes a rotating jig holding the substrate almost horizontally and rotating the substrate, and supplying a processing liquid to the upper surface of the substrate rotated by the rotating jig. Nozzle. For example, a chemical solution is supplied to a substrate held in a rotating jig, and then a rinsing solution is supplied, thereby replacing the chemical solution on the substrate with a rinsing solution. Thereafter, a drying process is performed in which the rinse liquid is removed from the upper surface of the substrate.

As a drying process, in order to suppress the occurrence of water marks, a method of supplying vapor of isopropyl alcohol (IPA) having a boiling point lower than that of water to the surface of a substrate in a rotating state is known. For example, rotary drying (refer to US Patent Application No. 2009/0101181 A1) is an example of the method.

As such a drying method, specifically, a liquid film of a processing liquid (rinsing liquid) is formed on the upper surface of a substrate, and a vapor of a low surface tension liquid (IPA) is blown onto the liquid film of the processing liquid to form a liquid film removal region. Then, the liquid film removal area is enlarged, and the liquid film removal area is extended to the entire area of the upper surface of the substrate, thereby drying the upper surface of the substrate.

However, in this drying method, particles may be generated on the substrate surface (the processing target surface) after drying.

Therefore, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of drying the upper surface of a substrate while suppressing or preventing generation of particles.

The inventors of the present invention believe that the cause of particle generation in a drying method (rotary drying, etc.) using a vapor of a low surface tension liquid is as follows. That is, as a result of the treatment with the treatment liquid, particles may be contained in the liquid film of the treatment liquid formed on the upper surface of the substrate. If the area for removing the liquid film is enlarged, the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase (including the boundary of the three-phase interface of the gas-liquid-solid interface) moves outward (that is, the liquid film side of the processing liquid). With the expansion of the area where the liquid film is removed, the portion near the boundary in the liquid film of the processing liquid (the so-called "boundary portion of the liquid film of the processing liquid". The same applies to this item below) becomes particles.

Inside the boundary portion of the liquid film of this treatment liquid, thermal convection occurs. This thermal convection flows toward the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase. Therefore, if particles are contained in the boundary portion of the liquid film of the processing liquid, the particles are promoted toward the boundary between the upper surface of the substrate and the gas phase due to thermal convection, and the boundary moves to the liquid film removal area and appears on the substrate. On the surface. Then, particles remained on the upper surface of the substrate after the liquid film of the processing liquid was removed. The inventors of this case believe that this is the mechanism of particle generation.

In addition, the inventors of the present application have learned that if the surrounding environment of the liquid film of the processing liquid and the boundary between the upper surface of the substrate and the gas phase is in a vapor-rich state of a low surface tension liquid having a surface tension lower than that of the processing liquid, Thermal convection does not occur inside the boundary portion of the liquid film of the liquid, and inside the boundary portion of the liquid film of the processing liquid, a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase (i.e., and Thermal Convection Reverse) Flowing Marangoni Convection.

The present invention provides a substrate processing method, comprising: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on the upper surface of the substrate to form a liquid film covering the processing liquid on the upper surface of the substrate; and the liquid film After the forming step, in order to form a liquid film removal region from the liquid film removal liquid film of the processing liquid, a first gas containing a low surface tension liquid vapor having a lower surface tension than the processing liquid is discharged from the first outlet. The first gas discharge step of blowing out and spraying the first gas on the liquid film of the treatment liquid in a direction crossing the upper surface; vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid A second gas ejection step of laterally and radially ejecting the second gas from the annular second ejection opening which is different from the first ejection outlet; and a liquid film removal area for expanding the liquid film removal area. Expand steps.

According to this method, a first film containing a vapor of a low surface tension liquid is blown onto the liquid film of the processing liquid formed on the upper surface of the substrate from a direction intersecting the upper surface of the substrate, and the liquid film of the processing liquid is blown. A liquid film removal area is formed. By this expansion of the liquid film removal area, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid moves toward the outside of the substrate. By expanding the liquid film removal area to the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

In addition, the second gas containing the vapor of the low surface tension liquid is formed in a ring shape. The second outlet is discharged horizontally and radially. The second gas discharged from the second discharge port is supplied around the liquid film of the processing liquid formed on the upper surface of the substrate. Therefore, the surrounding environment of the liquid film of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. Therefore, after the formation of the liquid film removal region, the surrounding environment of the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid, and the generated Marango can be maintained Convection.

Therefore, in the case where particles are contained in the liquid film of the processing liquid, the particles are promoted by the Marangoni convection in a direction away from the boundary between the upper surface of the substrate and the gas phase. Therefore, depending on the state where particles in the liquid film of the treatment liquid are taken up in the liquid film, the liquid film removal area can be enlarged. The particles contained in the liquid film of the processing liquid do not appear in the liquid film removing area, but are removed from the upper surface of the substrate together with the liquid film of the processing liquid. Therefore, after the substrate is dried, no particles remain on the upper surface of the substrate. Thereby, the entire area of the upper surface of the substrate can be dried while suppressing or preventing the occurrence of particles.

It is also conceivable to, for example, fill the entire area inside the chamber containing the substrate holding unit with an environment of low surface tension liquid vapor, and blow the liquid film of the processing liquid with low surface tension liquid vapor. However, in this case, since the entire area inside the chamber must be filled with the vapor environment of the low surface tension liquid, the consumption of the low surface tension liquid is greatly increased.

On the other hand, according to the method described above, by discharging the second gas laterally and radially from the second discharge port, it is possible to keep the surrounding environment at the boundary between the upper surface of the substrate and the boundary between the liquid film and the gas phase of the processing liquid low. The state of the vapor of the surface tension fluid. Thereby, the liquid saving of the low surface tension liquid can be achieved, and the upper surface of the substrate can be dried well.

In one embodiment of the present invention, the second outlet is disposed in a vertical direction and is disposed above the first outlet. According to this method, since the second outlet is disposed above the first outlet, the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be separated by the gas flow of the second gas discharged from the second outlet. The periphery of the boundary is blocked by the area above the second outlet. Thereby, the periphery of the liquid film of the processing liquid and the boundary between the upper surface of the substrate and the gas phase can be maintained in a state of being more rich in the vapor of the low surface tension liquid.

The substrate processing method may be performed in parallel with the first gas discharge step and the second gas discharge step. According to this method, since the discharge of the first gas from the first discharge port and the discharge of the second gas from the second discharge port are performed in parallel, the surface of the substrate and the processing liquid can be expanded when the liquid film removal area is expanded. The surrounding environment at the boundary between the liquid film and the gas phase is continuously maintained as a vapor rich in low surface tension liquid. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid.

The second gas discharge step may be started before the first gas discharge step is started. According to this method, since the second gas is discharged from the second discharge port before the first gas is discharged from the first discharge port, the environment near the upper surface of the substrate can be in a state of being rich in the vapor of the low surface tension liquid. Formation of liquid film removal area.

The step of expanding the liquid film removal region may include a first flow rate increasing step of gradually increasing the flow rate of the first gas discharged from the first discharge port after the first gas discharge is started. In this case, the substrate processing method may further include: adjusting a flow rate of the second gas discharged from the second discharge port, in which A second flow rate increasing step that gradually increases after the second gas discharge starts.

According to this method, after the discharge of the first gas is started, the flow rate of the first gas is gradually increased, so that the liquid film removal area can be enlarged. At this time, since the flow rate of the second gas is gradually increased after the discharge of the second gas is started, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid can be increased regardless of the expansion of the liquid film removal area. The surrounding environment is continuously maintained as a vapor rich in low surface tension liquid.

The processing liquid system includes a washing liquid, and the low surface tension liquid may contain an organic solvent.

According to this method, the first film containing the vapor of a low surface tension liquid is blown to the liquid film of the washing liquid formed on the upper surface of the substrate from the direction intersecting the upper surface of the substrate, and the liquid film of the washing liquid is blown. A liquid film removal area is formed. By this expansion of the liquid film removal area, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the rinsing liquid moves toward the outside of the substrate. By expanding the liquid film removal area to the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

The second gas containing the vapor of the low surface tension liquid is discharged laterally and radially from the annular second discharge port. The second gas discharged from the second discharge port is supplied around the liquid film of the rinse liquid formed on the upper surface of the substrate. Therefore, the surrounding environment of the liquid film of the rinsing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. Therefore, after the formation of the liquid film removal region, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film and the gas phase of the rinsing liquid can be maintained in a state rich in low surface tension liquid vapor. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the washing liquid and the boundary between the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the washing liquid, and the occurred Marango can be maintained Convection.

Therefore, in the case where particles are contained in the liquid film of the washing solution, the particles are Marangoni convection is promoted away from the upper surface of the substrate and the boundary between the gas phase. Therefore, the liquid film removal area can be enlarged according to the state in which particles in the liquid film of the rinsing liquid are absorbed in the liquid film. The particles contained in the liquid film of the washing liquid do not appear in the liquid film removing area, but are removed from the upper surface of the substrate together with the liquid film of the washing liquid. Therefore, after the substrate is dried, no particles remain on the upper surface of the substrate. Thereby, the entire area of the upper surface of the substrate can be dried while suppressing or preventing the occurrence of particles.

The present invention provides a substrate processing apparatus comprising: a substrate holding unit for horizontally holding a substrate; a processing liquid supply unit for supplying a processing liquid to an upper surface of the substrate; and a nozzle having a first discharge port for discharging gas downward. And a ring-shaped second discharge port for discharging the gas in the lateral direction; the first gas supply unit supplies the first discharge port with vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid; The first gas and the second gas supply unit supply a second gas containing a low surface tension liquid having a lower surface tension than the processing liquid to the second discharge port; and the substrate held in the substrate holding unit Rotating substrate rotation unit; and a control unit that controls the processing liquid supply unit, the first gas supply unit, the second gas supply unit, and the substrate rotation unit; the control unit performs: supplying processing on the upper surface of the substrate Liquid to form a liquid film forming step of a liquid film covering the upper surface of the substrate; after the above liquid film forming step, Forming a liquid film removal area from the liquid film removal liquid film of the processing liquid, discharging the first gas from the first outlet, and blowing a first gas discharge step of spraying the first gas onto the liquid film of the processing liquid; A second gas discharge step of discharging the second gas radially and radially from the second discharge port; and a liquid film removal region expansion step of expanding the liquid film removal region.

According to this configuration, the liquid of the processing liquid formed on the upper surface of the substrate is used. The first gas containing the vapor of the low surface tension liquid is blown in a direction crossing the upper surface of the substrate, and a liquid film removal region is formed on the liquid film of the processing liquid. By this expansion of the liquid film removal area, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid moves toward the outside of the substrate. By expanding the liquid film removal area to the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

The second gas containing the vapor of the low surface tension liquid is discharged laterally and radially from the annular second discharge port. The second gas discharged from the second discharge port is supplied around the liquid film of the processing liquid formed on the upper surface of the substrate. Therefore, the surrounding environment of the liquid film of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. Therefore, after the formation of the liquid film removal region, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid, and the generated Marango can be maintained Convection.

Therefore, in the case where particles are contained in the liquid film of the processing liquid, the particles are promoted by the Marangoni convection in a direction away from the boundary between the upper surface of the substrate and the gas phase. Therefore, depending on the state where particles in the liquid film of the treatment liquid are taken up in the liquid film, the liquid film removal area can be enlarged. The particles contained in the liquid film of the processing liquid do not appear in the liquid film removing area, but are removed from the upper surface of the substrate together with the liquid film of the processing liquid. Therefore, after the substrate is dried, no particles remain on the upper surface of the substrate. Thereby, the entire area of the upper surface of the substrate can be dried while suppressing or preventing the occurrence of particles.

It is also conceivable to, for example, fill the entire area inside the chamber containing the substrate holding unit with an environment of low surface tension liquid vapor, and blow the liquid film of the processing liquid with low surface tension liquid vapor. However, in this case, it is necessary to The entire area is filled with a low surface tension liquid vapor environment, so the consumption of low surface tension liquid has greatly increased.

On the other hand, according to the above configuration, by discharging the second gas laterally and radially from the second discharge port, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be kept low. The state of the vapor of the surface tension fluid. Thereby, the liquid saving of the low surface tension liquid can be achieved, and the upper surface of the substrate can be dried well.

According to an embodiment of the present invention, the nozzle includes a first cylinder having a first flow path through which the first gas flows, and the first outlet is formed by a lower end portion of the cylinder, and A flange is provided at a lower end portion of the first cylinder, and the first gas system discharged from the first discharge port circulates in a space between the upper surface of the substrate and the flange.

According to this configuration, the first gas discharged from the first discharge port flows through the space between the upper surface of the substrate and the flange, and is radially and laterally discharged from between the outer peripheral end of the flange and the substrate. Therefore, after the liquid film removal area is formed, the first gas system from between the outer peripheral end of the flange and the substrate flows radially outward along the upper surface of the substrate in the circumferential direction. Thereby, the first gas can be supplied to the periphery of the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase, and the periphery of the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be kept low in richness. The state of the vapor of the surface tension fluid.

The second discharge port may be disposed above the flange.

According to this method, the second outlet is disposed above the flange. Therefore, the periphery of the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be blocked by the area above the second outlet by the air flow of the second gas discharged from the second outlet. Thereby, the periphery of the liquid film of the processing liquid and the boundary between the upper surface of the substrate and the gas phase can be maintained in a state richer in the vapor of the low surface tension liquid.

The nozzle may further include a second cylinder, which surrounds the first cylinder, and defines a second flow path through which the second gas flows, between the first cylinder and the first cylinder. In this case, the second discharge port may be formed by the second cylinder and the flange.

According to this configuration, since the second discharge port, the outer peripheral end of the flange, and the substrate are arranged up and down, the second gas system discharged from the second discharge port is supplied to the upper surface of the substrate and the liquid film and gas phase of the processing liquid. Around the border. Thereby, the periphery of the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be maintained in a state of being further rich in the vapor of the low surface tension liquid.

The substrate processing apparatus may further include a facing member that faces the upper surface of the substrate and has a facing surface that guides the second gas discharged from the second outlet. With this configuration, the second gas discharged from the second discharge port fills the space between the facing surface and the upper surface of the substrate. Therefore, it is possible to suppress the second gas from flowing out from the vicinity of the upper surface of the substrate. Thereby, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be continuously maintained in a state of being more rich in the vapor of the low surface tension liquid.

The facing member may have a facing peripheral edge portion which faces the peripheral edge portion of the upper surface of the substrate, and a center portion of the facing surface and the upper surface of the substrate are formed between the facing edge portion and the upper surface. The interval between the central portions is narrower and narrower.

According to this configuration, since a narrow gap is formed between the opposing peripheral edge portion of the opposing member and the peripheral edge portion of the upper surface of the substrate, it is difficult for the second gas supplied to the space between the opposing surface and the upper surface of the substrate to pass through the space. Be discharged. Therefore, it is possible to further suppress the second gas from flowing out from the vicinity of the upper surface of the substrate. With this, the upper surface of the substrate can be The surrounding environment at the boundary between the liquid film and the gas phase of the treatment liquid is continuously maintained in a state of being further rich in the vapor of the low surface tension liquid.

The above content or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.

1, 201, 301‧‧‧ substrate processing equipment

2‧‧‧ processing unit

3‧‧‧control device

4‧‧‧ empty room

5‧‧‧Rotating fixture

6‧‧‧medicine supply unit

7‧‧‧Flushing liquid supply unit

8‧‧‧ gas supply unit (first gas supply unit, second gas supply unit)

9‧‧‧ cup

10‧‧‧ next door

12‧‧‧ exhaust pipe

13‧‧‧rotating motor

14‧‧‧rotation axis

15‧‧‧ rotating base

16‧‧‧ holding component

17‧‧‧medicine nozzle

18‧‧‧ liquid medicine piping

19‧‧‧ Liquid medicine valve

20‧‧‧The first nozzle arm

21‧‧‧The first nozzle moving unit

22‧‧‧Flushing liquid nozzle

23‧‧‧Flushing liquid pipe

24‧‧‧Flushing Valve

25‧‧‧ 2nd nozzle arm

26‧‧‧Second nozzle moving unit

27‧‧‧gas nozzle

28‧‧‧3rd nozzle arm

29‧‧‧3rd nozzle moving unit

31‧‧‧Inner cylinder (1st cylinder)

31a‧‧‧ lower part

32‧‧‧ outer cylinder (second cylinder)

32a‧‧‧ lower edge

33‧‧‧ flange

33a‧‧‧outer end

33b‧‧‧upper surface

33c‧‧‧ lower surface

34‧‧‧The first gas flow path

35‧‧‧The first spit exit

36‧‧‧Cylinder

37‧‧‧Locking Department

38‧‧‧ 2nd gas flow path

39‧‧‧The second exit

40‧‧‧The first gas piping

41‧‧‧The first gas valve

42‧‧‧ 2nd gas piping

43‧‧‧ 2nd gas valve

44‧‧‧ liquid film

45‧‧‧Liquid film removal area

46‧‧‧ border

47‧‧‧ border section

48‧‧‧ mixed gas flow

49‧‧‧Marangoni Convection

50‧‧‧Circle Exit

202, 202A‧‧‧ Opposing members

203‧‧‧gas nozzle

Opposite to 204, 204A‧‧‧

205‧‧‧Scaffold

206‧‧‧The third gas piping

207‧‧‧3rd gas valve

208‧‧‧4th gas piping

209‧‧‧4th gas valve

210, 210A‧‧‧Space

211‧‧‧Supporting member lifting unit

212‧‧‧through hole

302‧‧‧ annular protrusion (opposite peripheral edge)

303‧‧‧ tapered surface

303a‧‧‧outer end

A1‧‧‧axis of rotation

A2‧‧‧Vertical axis

P‧‧‧ particles

SP‧‧‧ Space

W‧‧‧ substrate

W1, W2‧‧‧ intervals

FIG. 1 is a view of a substrate processing apparatus according to a first embodiment of the present invention as viewed from a horizontal direction.

FIG. 2 is an enlarged cross-sectional view showing a state in which a mixed gas (IPA vapor + N ₂ ) is being discharged from a vapor nozzle provided in the substrate processing apparatus.

FIG. 3 is a flowchart for explaining a first processing example of processing performed by the substrate processing apparatus.

4A to 4F are diagrams for explaining the above-mentioned first processing example.

FIG. 5 is a graph showing the relationship between the processing time and the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the first and second outlets.

6A and 6B are plan views showing a state of a boundary portion of a liquid film of a rinsing liquid when a liquid film removal region is enlarged.

FIG. 7 is a schematic diagram for explaining a second processing example of processing performed by the substrate processing apparatus.

FIG. 8 is a schematic diagram for explaining a configuration of a substrate processing apparatus according to a second embodiment of the present invention.

FIG. 9 is a schematic diagram for explaining a configuration of a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 1 is a view of a substrate processing apparatus 1 according to a first embodiment of the present invention as viewed from a horizontal direction.

The substrate processing apparatus 1 is a monolithic apparatus that processes a wafer-shaped substrate W such as a semiconductor wafer in a single piece using a processing liquid or a processing gas. The substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W using a processing liquid, and a control device (control unit) 3 that controls the operation of a device included in the substrate processing apparatus 1 or the opening and closing of a valve.

Each processing unit 2 is a single-chip unit. Each processing unit 2 includes: a box-shaped chamber 4 having an internal space; a substrate W is held in the chamber 4 in a horizontal posture, and the substrate W is rotated around a vertical rotation axis A1 passing through the center of the substrate W Jig (substrate holding unit) 5; a chemical liquid supply unit 6 for supplying a chemical solution to the upper surface of the substrate W held by the rotary jig 5; Rinsing liquid supply unit (treatment liquid supply unit) 7; for supplying the vapor of IPA, which is an example of an organic solvent with a low surface tension liquid, and N, which is an example of an inert gas, to the substrate W held on the rotary jig 5 A gas supply unit (a first gas supply unit, a second gas supply unit) 8 of a mixed gas of _two gases (IPA vapor + N ₂ ); and a cylindrical cup 9 surrounding the periphery of the rotating jig 5.

The chamber 4 includes: a box-shaped partition wall 10 containing a rotary jig 5 or a nozzle; and an FFU (fa filter) as an air supply unit that sends clean air (air filtered by a filter) into the partition wall 10 from above the partition wall 10 unit (fan filter unit) 11; and an exhaust pipe 12 that exhausts the gas in the chamber 4 from the lower part of the partition wall 10. The FFU11 is arranged above the partition wall 10 and is mounted on the top plate of the partition wall 10. FFU11 sends clean air into the chamber 4 from the top plate of the partition wall 10 downward. The exhaust pipe 12 is connected to the bottom of the cup 9, The gas in the chamber 4 is led out to an exhaust processing equipment provided in a factory where the substrate processing apparatus 1 is installed. Therefore, a downflow flowing downward in the chamber 4 is formed by the FFU 11 and the exhaust pipe 12. The processing of the substrate W is performed in a state where a downflow is formed in the chamber 4.

As the rotation jig 5, a holding type jig that holds the substrate W in a horizontal direction and holds the substrate W horizontally is used. Specifically, the rotating jig 5 includes: a rotating motor (substrate rotating unit) 13; a rotating shaft 14 integrated with a driving shaft of the rotating motor 13; and a disk-shaped one mounted on the upper end of the rotating shaft 14 horizontally. Rotate the substrate 15.

A plurality of (3 or more, for example, 6) holding members 16 are arranged on the upper surface of the rotating base 15 at the peripheral edge portion. The plurality of holding members 16 are arranged on the peripheral edge portion of the upper surface of the rotating base 15 and are arranged at appropriate intervals on a circumference corresponding to the outer peripheral shape of the substrate W.

The rotary jig 5 is not limited to the holding type. For example, the back surface of the substrate W may be vacuum-adsorbed, thereby holding the substrate W in a horizontal posture, and then rotating around the vertical axis of rotation in this state. Vacuum suction type (vacuum clamp) held by the substrate W held in the rotary jig 5 for rotation.

The medicinal solution supply unit 6 includes: a medicinal solution nozzle 17 for discharging medicinal solution; a medicinal solution pipe 18 connected to the medicinal solution nozzle 17; a medicinal solution valve 19 installed in the medicinal solution pipe 18; The first nozzle arm 20 of 17 and the first nozzle moving unit 21 that moves the chemical liquid nozzle 17 by swinging the first nozzle arm 20.

When the liquid medicine valve 19 is opened, the liquid medicine supplied from the liquid medicine pipe 18 to the liquid medicine nozzle 17 is discharged downward from the liquid medicine nozzle 17. When the chemical solution valve 19 is closed, the chemical solution from the chemical solution nozzle 17 is stopped. The first nozzle moving unit 21 moves the chemical liquid nozzle 17 along the upper surface of the substrate W, and thereby positions the chemical liquid supply position in the upper surface of the substrate W. mobile. Further, the first nozzle moving unit 21 is located between a processing position where the chemical solution discharged from the chemical solution nozzle 17 is supplied to the upper surface of the substrate W, and a retracted position where the chemical solution nozzle 17 is retracted to the side of the rotary jig 5 in a plan view. To move the chemical liquid nozzle 17.

Examples of the chemical solution discharged from the chemical solution nozzle 17 include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), and organic bases (such as TMAH : Tetramethylammonium hydroxide, etc.), a surfactant, and a liquid of at least one of anticorrosive agents.

The flushing liquid supply unit 7 includes: a flushing liquid nozzle 22 that discharges water; a flushing liquid pipe 23 connected to the flushing liquid nozzle 22; a flushing liquid valve 24 interposed in the flushing liquid pipe 23; and a flushing liquid nozzle 22 is installed at the front end And a second nozzle moving unit 26 that moves the flushing liquid nozzle 22 by swinging the second nozzle arm 25.

When the flushing liquid valve 24 is opened, the water system supplied from the flushing liquid pipe 23 to the flushing liquid nozzle 22 is discharged downward from the flushing liquid nozzle 22. When the flushing liquid valve 24 is closed, the discharge of water from the flushing liquid nozzle 22 is stopped. The second nozzle moving unit 26 moves the rinse liquid nozzle 22 along the upper surface of the substrate W, thereby moving the water supply position within the upper surface of the substrate W. Further, the second nozzle moving unit 26 is located between a processing position where the water discharged from the rinse liquid nozzle 22 is supplied to the upper surface of the substrate W, and a retreat position where the rinse liquid nozzle 22 retracts to the side of the rotating jig 5 in a plan view, The rinse liquid nozzle 22 is moved.

The rinsing liquid discharged from the rinsing liquid nozzle 22 is, for example, pure water (Deionzied Water). The water is not limited to pure water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).

The gas supply unit 8 includes: a gas nozzle (nozzle) 27 that discharges a mixed gas (IPA vapor + N ₂ ); a third nozzle arm 28 having a gas nozzle 27 attached to the front end; and the third nozzle arm 28 is swung, The third nozzle moving unit 29 moves the gas nozzle 27.

FIG. 2 is an enlarged cross-sectional view showing a state where a gas mixture (IPA vapor + N ₂ ) is being discharged from a gas nozzle 27 included in the substrate processing apparatus 1.

The gas nozzle 27 includes an inner tube (first tube body) 31 and an outer tube (second tube body) 32 which is fitted in the inner tube 31 and surrounds the inner tube 31. The inner tube 31 and the outer tube 32 are coaxially arranged on the vertical axis A2 which is common to each of them. As shown in FIG. 3, the inner tube 31 is formed in a cylindrical shape except for the lower end portion 31 a. A flat flange 33 extending in the horizontal direction is formed on the lower end portion 31a of the inner cylinder 31. The upper surface 33b and the lower surface 33c of the flange 33 each include a horizontal flat wall. In FIG. 2, the outer peripheral end 33 a of the flange 33 is depicted as being aligned with the outer periphery of the outer tube 32 in a plan view, but the outer peripheral end 33 a of the flange 33 may protrude to the outside in the radial direction than the outer tube 32. The inner space of the inner cylinder 31 is formed into a linear first gas flow path 34 through which a mixed gas (IPA vapor + N ₂ ) from a first gas pipe 40 described later flows. A first outlet 35 is formed at the lower end of the first gas flow path 34.

The outer cylinder 32 includes a cylindrical portion 36 and a locking portion 37 that locks an upper end portion of the cylindrical portion 36. Between the outer periphery of the inner tube 31 and the inner periphery of the lock portion 37, a liquid sealing is performed by a sealing member (not shown). A cylindrical second gas flow path 38 is formed between the cylindrical portion 36 of the inner cylinder 31 and the outer cylinder 32 and a processing liquid from a second gas pipe 42 to be described later flows. The inner tube 31 and the outer tube 32 use vinyl chloride, PCTFE (polychlorotrifluoroethylene), PVDF (polydifluoroethylene), PTFE (polytetrafluoroethylene), and PFA (perfluoroalkyl vinyl ether-tetrafluoro) Ethylene copolymer) and other resin materials.

At the lower end portion of the outer tube 32, a ring-shaped second outlet 39 is defined by the lower end edge 32a of the outer tube 32 and the outer peripheral end 33a of the flange 33 of the inner tube 31. Since the upper surface 33b of the flange 33 forms a horizontal flat surface, the mixed gas (IPA vapor + N ₂ ) forms a horizontal flow while the second gas flow path 38 flows toward the second outlet 39. The second discharge port 39 discharges the mixed gas (IPA vapor + N ₂ ) flowing in the second gas flow path 38 in a horizontal direction radially.

The gas supply unit 8 further includes: a first gas pipe 40 connected to the first gas flow path 34 of the gas nozzle 27; a first gas valve 41 interposed in the first gas pipe 40; and a first gas valve 41 connected to the gas nozzle 27 The second gas piping 42 of the two gas flow path 38 and the second gas valve 43 interposed in the second gas piping 42. When the first gas valve 41 is opened, the mixed gas (IPA vapor + N ₂ ) supplied from the first gas pipe 40 to the first gas flow path 34 of the gas nozzle 27 is discharged downward from the first discharge port 35. When the second gas valve 43 is opened, the mixed gas (IPA vapor + N ₂ ) supplied from the second gas pipe 42 to the second gas flow path 38 of the gas nozzle 27 is radiated in a horizontal direction from the second outlet 39. Spit it out.

When the substrate W is processed by the substrate processing apparatus 1, the gas nozzle 27 is disposed at a position where the lower surface 33 c of the flange 33 and the upper surface of the substrate W face each other at a predetermined interval W1 (for example, about 6 mm). In this state, when the first gas valve 41 is opened, the mixed gas (IPA vapor + N ₂ ) discharged from the first discharge port 35 is blown onto the upper surface of the substrate W. The mixed gas (IPA vapor + N ₂ ) discharged from the first discharge port 35 flows through the space SP between the lower surface 33 c of the flange 33 and the upper surface of the substrate W, and is formed at the outer peripheral end of the flange 33. The annular outlet 50 between 33a and the substrate W is radially and horizontally discharged.

The control device 3 is configured using, for example, a microcomputer. 3 control devices There are calculation units such as a CPU, fixed memory devices, memory units such as a hard disk drive, and input / output units. The memory unit memorizes the program for executing the calculation unit. The control device 3 controls operations of the rotary motor 13, the first nozzle moving unit 21, the second nozzle moving unit 26, the third nozzle moving unit 29, and the like in accordance with a program stored in the memory unit in advance. Further, the control device 3 controls the opening and closing operations of the chemical liquid valve 19, the flushing liquid valve 24, the first gas valve 41, the second gas valve 43 and the like in accordance with a program stored in the memory unit in advance.

FIG. 3 is a flowchart for explaining a first processing example of processing performed by the substrate processing apparatus 1. 4A to 4F are diagrams for explaining a first processing example. FIG. 5 is a graph showing the relationship between the processing time and the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the first discharge outlet 35 and the second discharge outlet 39. 6A and 6B are plan views showing the state of the boundary portion 47 of the liquid film of the rinsing liquid when the liquid film removal region 45 is enlarged.

A first processing example will be described with reference to FIGS. 1 to 3. 4A to 4F, FIG. 5 and FIGS. 6A and 6B. The first processing example is a processing example in which the upper surface of the substrate W is cleaned using a chemical solution.

When the substrate W is processed by the substrate processing apparatus 1, the unprocessed substrate W is carried into the chamber 4 (step S1). Specifically, the control device 3 moves the substrate W into the chamber 4 by a transfer robot (not shown) in a state where the configuration in the chamber 4 such as the nozzles 17, 22, 27, and the like is retracted from above the rotary jig 5. Inside. Then, the control device 3 places the substrate W on the rotating jig 5 by the transfer robot in a state where the processing target surface (for example, the pattern forming surface) of the substrate W faces upward (the substrate holding step). Thereafter, the control device 3 rotates the rotary motor 13 in a state where the substrate W is held in the rotary jig 5. Thereby, the rotation of the substrate W is started (step S2). Control device 3 After the substrate W is placed on the rotating jig 5, the transfer robot is retracted from the chamber 4.

Next, a chemical solution step of supplying a chemical solution to the substrate W is performed (step S3). Specifically, the control device 3 controls the first nozzle moving unit 21 to move the chemical liquid nozzle 17 from the retreated position to the processing position. After that, the control device 3 opens the chemical liquid valve 19 and discharges the chemical liquid from the chemical liquid nozzle 17 toward the upper surface of the substrate W in the rotating state. The chemical solution discharged from the chemical solution nozzle 17 is supplied to the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W due to centrifugal force. Further, the control device 3 moves the position where the chemical solution is supplied to the upper surface of the substrate W between the central portion and the peripheral portion in a state where the substrate W is rotated. Thereby, the entire area of the upper surface of the substrate W is scanned by the chemical solution supply position, and the entire area of the upper surface of the substrate W is processed uniformly. When a predetermined time has elapsed, the control device 3 closes the liquid medicine valve 19 to stop the discharge of the liquid medicine from the liquid medicine nozzle 17, and thereafter, by controlling the second nozzle moving unit 26, the liquid medicine nozzle 17 is rotated by the jig. Retreat above 5. In the chemical solution step (S3), particles are removed from the upper surface of the substrate W carried into the chamber 4.

In the medicinal solution step (S3), physical washing can also be performed. As this physical cleaning, for example, a jet of minute liquid droplets of a chemical liquid from a so-called two-fluid nozzle is ejected and cleaned from the liquid droplets supplied to the upper surface of the substrate W; or the chemical liquid is supplied to the surface of the substrate W while being scrubbed Wait until the brush contacts the surface of the substrate W, thereby washing the surface with a brush.

Next, a washing step of supplying a washing liquid to the substrate W is performed (step S4). Specifically, the control device 3 controls the second nozzle moving unit 26 to move the flushing liquid nozzle 22 from the retracted position to the processing position. After that, the control device 3 opens the flushing liquid valve 24 and ejects the flushing liquid nozzle 22 toward the upper surface of the substrate W in the rotating state. water. Similarly to the chemical solution discharged from the chemical solution nozzle 17, the cleaning solution discharged from the cleaning solution nozzle 22 is deposited on the upper surface of the substrate W and then flows along the upper surface of the substrate W to the outside due to centrifugal force. Therefore, the chemical solution on the substrate W is pushed to the outside by the rinsing liquid, and is discharged from the periphery of the substrate W. Thereby, the chemical solution on the substrate W is washed away by the rinsing solution. Further, the control device 3 moves the rinse liquid supply position to the upper surface of the substrate W between the central portion and the peripheral portion in a state where the substrate W is rotated. Thereby, the entire area of the upper surface of the substrate W is scanned by the rinse liquid supply position, and the entire area of the upper surface of the substrate W is processed uniformly. The rinse liquid contains particles removed from the upper surface of the substrate W.

Next, a step of paddle rinsing (holding the liquid film (the liquid film of the processing liquid) 44 of the rinsing liquid) on the substrate W in a state where the supply of the rinsing liquid to the substrate W is stopped (step S5). Specifically, the control device 3 stops the rotation of the substrate W in a state where the entire area of the upper surface of the substrate W is covered with the washing liquid by controlling the rotating jig 5; or reduces the rotation speed of the substrate W to be lower than that of the washing step (S4). The rotation speed is a low rotation speed at a lower speed (for example, about 10 to 100 rpm) (a state of rotating at a low speed of about 50 rpm is shown in FIG. 4A). As a result, a liquid film 44 covering the entire area of the upper surface of the substrate W is formed on the upper surface of the substrate W. In this state, the centrifugal force of the liquid film 44 of the washing liquid on the upper surface of the substrate W is smaller than the surface tension acting between the washing liquid and the upper surface of the substrate W, or the centrifugal force and the surface tension are almost antagonized. Due to the deceleration of the substrate W, the centrifugal force of the rinse liquid acting on the substrate W becomes weak, and the amount of the rinse liquid discharged from the substrate W decreases. Particles may be contained in the liquid film 44 of the rinse liquid.

The control device 3 closes the flushing liquid valve 24 to stop the flushing liquid from the flushing liquid nozzle 22 when the substrate W is stationary or the substrate W is rotating at a low rotational speed. In addition, a stagnant washing liquid is formed on the upper surface of the substrate W. After the liquid film 44, the rinse liquid may be supplied to the upper surface of the substrate W.

Next, the control device 3 performs a drying step (step S6).

Specifically, the control device 3 controls the third nozzle moving unit 29 to move the gas nozzle 27 from the retracted position to the center position. After the gas nozzle 27 is arranged at the center position, the mixed gas (IPA vapor + N ₂ ) is discharged from the gas nozzle 27.

Specifically, first, the control device 3 opens the second gas valve 43 and, as shown in FIG. 4B, the mixed gas (IPA vapor + N ₂ ) is radially discharged from the second outlet 39 of the gas nozzle 27 in a horizontal direction. Thereby, a mixed gas (IPA vapor + N ₂ ) is supplied around the central portion of the liquid film 44 of the rinsing liquid on the substrate W, and the periphery of the central portion becomes a state rich in IPA vapor.

As shown in FIG. 5, the control device 3 increases the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the second outlet 39 after the discharge of the mixed gas (IPA vapor + N ₂ ) starts. In FIG. 5, the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) increases in proportion to the passage of time, but if it increases with the passage of time, it may not be proportional to the passage of time.

When the discharge of the mixed gas (IPA vapor + N ₂ ) from the second discharge port 39 has started for a predetermined period of time, the control device 3 then opens the first gas valve 41 and the mixed gas is discharged from the first discharge port 35 of the gas nozzle 27 (IPA vapor + N ₂ ) is discharged downward, and as shown in FIG. 4C, a mixed gas (IPA vapor + N ₂ ) is blown into the central portion of the liquid film 44 of the rinse liquid on the upper surface of the substrate W. Thereby, the rinsing liquid located at the center portion of the liquid film 44 of the rinsing liquid is physically pushed by the blowing pressure (air pressure), and is removed by being blown away from the center portion of the upper surface of the substrate W. As a result, a liquid film removal region 45 is formed in the center portion of the upper surface of the substrate W.

The mixed gas (IPA vapor + N ₂ ) discharged from the first outlet 35 is circulated in the space SP between the upper surface of the substrate W and the lower surface 33c of the flange 33, and the peripheral end 33a outside the flange 33 and The annular outlets 50 formed between the substrates W are radially and horizontally discharged. Therefore, after the liquid film removal region 45 is formed, the mixed gas (IPA vapor + N ₂ ) from the annular outlet 50 flows radially outward along the upper surface of the substrate W in the circumferential direction.

As shown in FIG. 5, the control device 3 gradually increases the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the first outlet 35 after the discharge of the mixed gas (IPA vapor + N ₂ ) is started. In FIG. 5, although the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) increases in proportion to the passage of time, if it increases with the passage of time, it may not be proportional to the passage of time.

After the discharge of the mixed gas (IPA vapor + N ₂ ) from the first discharge port 35 is started, the control device 3 controls the rotary motor 13 to gradually increase the rotation speed of the substrate W from zero or a low rotation speed. If the rotation speed of the substrate W exceeds a predetermined speed, a centrifugal force caused by the rotation of the substrate W is applied to the liquid film 44 of the washing liquid on the substrate W. As the rotation speed of the substrate W increases, the centrifugal force increases. As the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) increases and the rotation speed of the substrate W increases, as shown in FIG. 4D, the liquid film removal area 45 is enlarged. The rotation acceleration of the substrate W may not be performed after the mixed gas (IPA vapor + N ₂ ) is started to be discharged from the first outlet 35, but at the same time as the mixed gas (IPA vapor + N ₂ ) is started from the first outlet 35. Start.

Due to the expansion of the liquid film removal area 45, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the rinsing liquid (the boundary containing the three-layer interface of gas-liquid-solid) 46 moves toward the outside of the substrate W. For the following two reasons, regardless of the enlarged state of the liquid film removal region 45, the surrounding environment of the boundary 46 can be continuously maintained in a state rich in IPA vapor.

The first reason is that since the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the second outlet 39 is gradually increased after the start of the discharge, the mixed gas discharged radially from the second outlet 39 (IPA vapor + N ₂ ) is constantly supplied around the boundary 46.

The second reason is as follows. That is, since the second discharge port 39 is disposed above the first discharge port 35, the gas flow 48 (see FIG. 2) of the mixed gas (IPA vapor + N ₂ ) discharged from the second discharge port 39, The periphery of the boundary 46 is blocked by a region above the second outlet 39. Furthermore, by the mixed gas (IPA vapor + N ₂₎ a first outlet port 35 from the outlet 50 from the annular discharge and the horizontal direction by the radial surface of the mixed gas (IPA vapor + N ₂₎ along the substrate W in the circumferential direction of the external flow, the gas stream from a mixed gas of the second discharge port 39 of the (IPA vapor + N ₂₎ 48 (see FIG. 2), so that from the mixed gas of the first discharge port 35 of the (IPA vapor + N ₂₎ is It remains near the upper surface of the substrate W.

If the environment around the boundary 46 is in a state rich in IPA vapor with a lower surface tension than the rinsing liquid, as shown in FIG. 2, in the liquid film 44 of the rinsing liquid, a portion near the boundary 46 (referred to as “the rinsing liquid Thermal convection does not occur in the boundary portion 47 ″) of the liquid film, and Marango flows in the direction away from the boundary (that is, opposite to the thermal convection) in the boundary portion 47 of the liquid film of the washing liquid. Nepal Convection 49. After the formation of the liquid film removal region 45, regardless of the enlarged state of the liquid film removal region 45, the surrounding environment of the boundary 46 can be continuously maintained in a state of being rich in IPA vapor.

6A and 6B are plan views showing the state of the boundary portion 47 of the liquid film of the rinsing liquid when the liquid film removal region 45 is enlarged.

As shown in FIG. 6A, in the case where the particles P contained in the liquid film 44 of the washing liquid are present at the boundary portion 47 of the liquid film of the washing liquid, the particles P are promoted by the Marangoni convection 49 in a direction away from the boundary 46. Therefore, as the liquid film removal area 45 When the boundary 46 is enlarged and moved outside the substrate W, as shown in FIG. 6B, the particles P also move outward in the radial direction together. Therefore, in a state where the particles P are taken into the boundary portion 47 of the liquid film of the rinsing liquid, the liquid film removal area 45 is enlarged.

Then, the liquid film removal area 45 is expanded to the entire area of the substrate W, and the liquid film 44 of the washing liquid is completely discharged from the upper surface of the substrate W (the state shown in FIG. 4F), thereby drying the entire area of the upper surface of the substrate W. The particles contained in the liquid film 44 of the washing liquid do not appear in the liquid film removing area 45, and are removed from the upper surface of the substrate W together with the liquid film 44 of the washing liquid.

After the liquid film removal area 45 is enlarged to the entire area on the upper surface of the substrate W, the control device 3 closes the first gas valve 41 and the second gas valve 43 to make the mixed gas (IPA vapor + N ₂ ) from the gas nozzle 27 Spitting stopped. After that, the control device 3 controls the third nozzle moving unit 29 to retract the gas nozzle 27 above the rotary jig 5. The control device 3 controls the rotary motor 13 to stop the rotation of the rotary jig 5 (the rotation of the substrate W) (step S7).

Thereby, the processing of one substrate W is ended, and the control device 3 carries out the processed substrate W from the chamber 4 by the transfer robot in the same manner as when the substrate W is carried in (step S8).

According to the above embodiment, the mixed film (IPA vapor + N ₂ ) is blown onto the upper surface of the substrate W from the liquid film 44 of the rinse liquid formed on the upper surface of the substrate W, and the liquid film of the rinse liquid is blown from above. 44 forms a liquid film removal area 45. With the expansion of the liquid film removal region 45, the boundary 46 moves toward the outside of the substrate W. The liquid film removal area 45 is enlarged to the entire area of the substrate W, thereby drying the entire area of the upper surface of the substrate W.

The mixed gas (IPA vapor + N ₂ ) is discharged horizontally and radially from the annular second discharge port 39. The mixed gas (IPA vapor + N ₂ ) discharged from the second discharge port 39 is supplied around the liquid film 44 of the rinse liquid formed on the upper surface of the substrate W. Therefore, the environment near the upper surface of the liquid film 44 of the rinsing liquid can be maintained in a state of being rich in IPA vapor. Therefore, after the formation of the liquid film removal region 45, the surrounding environment of the boundary 46 can be maintained in a state of being rich in IPA vapor. Thereby, a Marangoni convection 49 flowing in a direction away from the boundary 46 can be generated inside the boundary portion 47 of the liquid film of the washing liquid, and the generated Marangoni convection 49 can be maintained.

Thus, in the case where particles are contained in the liquid film 44 of the rinsing liquid, the particles are promoted by the Marangoni convection 49 away from the boundary 46. When the liquid film removal region 45 is enlarged, the surrounding environment of the boundary 46 is continuously maintained in a state of being rich in IPA vapor. Therefore, the liquid film removal area 45 can be enlarged depending on the state where the particles in the liquid film 44 of the rinsing liquid are taken into the boundary portion 47 of the liquid film of the rinsing liquid. Therefore, particles contained in the liquid film 44 of the rinsing liquid do not appear in the liquid film removal area 45, but are removed from the upper surface of the substrate W together with the liquid film 44 of the rinsing liquid. Therefore, after the substrate W is dried, no particles remain on the upper surface of the substrate W. Thereby, the entire area of the upper surface of the substrate W can be dried while suppressing or preventing the occurrence of particles and the occurrence of water marks.

Further, since before the start of the first mixed gas outlet 35 of the discharge (IPA vapor + N ₂₎ discharge, a mixed gas before the start of the discharge outlet 39 (IPA vapor + N ₂₎ is discharged by the second, so to follow the substrate The environment near the upper surface of W is in a state of the vapor rich in IPA, and the formation of the liquid film removal region 45 is started. Thereby, from the beginning of the formation of the liquid film removal area 45, a Marangoni convection 49 flowing in a direction away from the boundary 46 can be generated inside the boundary portion 47 of the liquid film of the washing liquid.

Further, since the second discharge outlet 39 arranged in the first discharge port 35 than a more upward, hence with a mixed gas (IPA vapor + N ₂₎ of the discharge outlet 39 of the second gas stream from the periphery by the boundary 46 by The area above the second outlet 39 is blocked. Thereby, the environment around the boundary 46 can be maintained in a state of being richer in IPA vapor.

In addition, the mixed gas (IPA vapor + N ₂ ) discharged from the first discharge port 35 flows through the space SP between the upper surface of the substrate W and the flange 33, and flows from the peripheral end 33 a outside the flange 33 to the substrate W. The annular outlet 50 formed therebetween is radially and horizontally discharged. Therefore, after the liquid film removal region 45 is formed, the mixed gas (IPA vapor + N ₂ ) flows radially outward along the upper surface of the substrate W in the circumferential direction. Thereby, the environment around the boundary 46 can be maintained as a state richer in IPA vapor.

In addition, since the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the second discharge port 39 is gradually increased after the start of the discharge, the periphery of the boundary 46 can be expanded regardless of the expansion of the liquid film removal region 45. The environment continues to be in a state of vapor rich in IPA.

It is also conceivable that, for example, the entire area inside the chamber 4 is filled with IPA vapor to the atmosphere, and IPA vapor is blown onto the liquid film 44 of the washing solution. However, in this case, since it is necessary to fill the entire area inside the chamber 4 with IPA vapor, the consumption of IPA increases greatly.

On the other hand, in the present embodiment, the mixed gas (IPA vapor + N ₂ ) is horizontally and radially discharged from the second discharge port 39, so that the surrounding environment of the boundary 46 can be maintained in a state of being rich in IPA vapor. Thereby, the liquefaction of IPA can be achieved, and the upper surface of the substrate W can be dried well.

FIG. 7 is a schematic diagram for explaining a second processing example of processing performed by the substrate processing apparatus 1.

The second processing example is different from the first processing example shown in FIGS. 3 to 4F in that, in the drying step (S6), a mixed gas (IPA vapor + N ₂ ) from the first outlet 35 is applied to the substrate. W after the start of spraying the surface (i.e., region 45 is formed after the film is removed), a mixed gas of the upper surface of the substrate W (the vapor of IPA + N ₂₎ is blown position, moving the central portion on the surface of the substrate W The liquid film removal area 45 is extended to the peripheral edge portion of the upper surface. Except for this point, the second processing example is common to the first processing example.

Specifically, the control device 3 controls the third nozzle moving unit while continuing to blow the mixed gas (IPA vapor + N ₂ ) from the first outlet 35 of the gas nozzle 27 after the liquid film removal area 45 is formed. 29. The gas nozzle 27 is horizontally moved from the central portion of the upper surface of the substrate W to the outside in the radial direction to above the peripheral portion of the upper surface. Thereby, the liquid film removal area 45 is enlarged.

In this second processing example, the spraying position of the mixed gas (IPA vapor + N ₂ ) from the first discharge port 35 can be moved outward in the radial direction, so that the liquid film removal region 45 can be enlarged. Therefore, the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the first discharge port 35 can be maintained at a constant flow rate after the start of the discharge. In addition, the rotation speed of the substrate W can be maintained at zero or a low rotation speed (shown in FIG. 7 when it is rotated at 50 rpm).

The discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the second discharge port 39 is maintained at a constant flow rate after the start of discharge.

Due to the expansion of the liquid film removal area 45, the boundary 46 moves toward the outside of the substrate W. The boundary 46 moves in accordance with the movement of the blowing position of the mixed gas from the first outlet 35, in other words, the boundary 46 moves in accordance with the movement of the gas nozzle 27. Thus, regardless of the enlarged region 45 of the film removal conditions, can be mixed by the second jetting of gas discharging outlet 39 radially (IPA vapor + N ₂₎ supplied to regularly around the boundary 46. Thereby, regardless of the enlarged state of the liquid film removal region 45, the surrounding environment of the boundary 46 can be continuously maintained as a state rich in IPA vapor.

As described above, the second processing example exhibits the same operational effects as those described in the first processing example.

In the second processing example, as in the first processing example, the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the second outlet 39 may be gradually increased after the start of the discharge.

In the second processing example, as in the first processing example, the discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the first discharge port 35 may be gradually increased after the discharge is started. The rotation speed of the substrate W may be gradually increased after the start of ejection, as in the first processing example.

FIG. 8 is a schematic diagram for explaining a configuration of a substrate processing apparatus 201 according to a second embodiment of the present invention.

In the second embodiment, parts that are common to the first embodiment are denoted by the same reference numerals as those in the case of FIGS. 1 to 7, and descriptions thereof are omitted. The main difference between the substrate processing apparatus 201 of the second embodiment and the substrate processing apparatus 1 of the first embodiment is that an opposing member 202 is provided facing the upper surface of the substrate W held by the rotary jig 5.

The opposing member 202 is disk-shaped. The diameter of the opposing member 202 is equal to or larger than the diameter of the substrate W. The lower surface of the opposing member 202 is opposed to the upper surface of the substrate W held by the rotating jig 5, and a circular opposing surface 204 formed of a flat surface is formed. The facing surface 204 faces the entire area of the upper surface of the substrate W. The opposing member 202 is supported by the bracket 205 in a horizontal posture such that the center axis of the opposing member 202 is located on the rotation axis A1 of the rotating jig 5.

The upper surface of the opposing member 202 is fixed to pass through the opposing member 202. The center vertical axis (the vertical axis coincident with the rotation axis A1 of the rotation jig 5) is the bracket 205 of the center axis. The holder 205 is formed hollow, and a gas nozzle (nozzle) 203 is inserted through the holder 205 in a state extending in the vertical direction. The gas nozzle 203 protrudes below the facing surface 204 through a through hole 212 formed in the central portion of the facing member 202. The gas nozzle 203 positions the facing member 202 so that the first and second outlets 35 and 39 are exposed below the facing surface 204. More specifically, the gap between the facing surface 204 and the upper end of the second outlet 39 is a certain amount.

A third gas pipe 206 is connected to the first gas flow path 34 of the gas nozzle 203. A third gas valve 207 is interposed in the third gas pipe 206. A fourth gas pipe 208 is connected to the second gas flow path 38 of the gas nozzle 203. A fourth gas valve 209 is interposed in the fourth gas pipe 208. When the third gas valve 207 is opened, the mixed gas (IPA vapor + N ₂ ) supplied from the third gas pipe 206 to the first gas flow path 34 of the gas nozzle 203 is discharged downward from the first outlet 35. When the fourth gas valve 209 is opened, the mixed gas (IPA vapor + N ₂ ) supplied from the fourth gas pipe 208 to the second gas flow path 38 of the gas nozzle 203 is horizontally moved from the second outlet 39 And spit out radially.

A supporting member lifting unit 211 is coupled to the bracket 205. The control device 3 controls the supporting member elevating unit 211 such that the opposing surface 204 of the opposing member 202 is close to the approaching position of the upper surface of the substrate W held by the rotary jig 5 and is retracted to a large extent to the retracting position above the rotary jig 5. Lifting from time to time. When the opposing member 202 is located at the close position, the lower surface 33c (refer to FIG. 2) of the flange 33 of the gas nozzle 203 faces the upper surface of the substrate W at a predetermined interval W2 (for example, about 6 mm).

The control device 3 controls operations of the support member elevating unit 211 and the like in accordance with a predetermined program. Furthermore, the control device 3 controls the third gas valve 207 and the fourth gas valve Switching operation of the gas valve 209 and the like.

The substrate processing apparatus 201 of the second embodiment performs, for example, the same processing as that of the first processing example (see FIGS. 3 and 4A to 4F). In the drying step (step S6 in FIG. 3), the control device 3 controls the supporting member elevating unit 211, and arranges the facing member 202 at an approach position. Thereafter, the mixed gas (IPA vapor + N ₂ ) from the gas nozzle 203 is discharged. The discharge timing and discharge flow rate of the mixed gas (IPA vapor + N ₂ ) from the first and second discharge ports 35 and 39 of the gas nozzle 203 and the rotation state of the substrate W are the same as the first processing of the first embodiment. The case is the same. Therefore, the second embodiment has the same effects as those described in the first embodiment.

In addition, in the second embodiment, in addition to the effects described in the first embodiment, a mixed gas (IPA vapor + N ₂ ) discharged from the second outlet 39 is filled between the facing surface 204 and the upper surface of the substrate W. Space 210. Therefore, it is possible to suppress the mixed gas (IPA vapor + N ₂ ) from flowing out from the vicinity of the upper surface of the substrate W. Thereby, the surrounding environment of the boundary 46 can be continuously maintained as a state richer in IPA vapor.

FIG. 9 is a schematic diagram for explaining a configuration of a substrate processing apparatus 301 according to a third embodiment of the present invention.

In the third embodiment, portions common to the second embodiment are denoted by the same reference numerals as those in the case of FIG. 8, and descriptions thereof are omitted. The main difference between the substrate processing apparatus 301 according to the third embodiment and the substrate processing apparatus 201 according to the second embodiment is that an opposing member 202A is provided instead of the opposing member 202.

The opposing member 202A has a disc shape. The diameter of the opposing member 202A may be the same as the diameter of the substrate W, or may be larger than the diameter of the substrate W as shown in FIG. 9. The lower surface of the opposing member 202A is opposed to the upper surface of the substrate W held by the rotating jig 5, and an opposing surface 204A is formed. The central part of the facing surface 204A is formed It is horizontal and flat. An annular protrusion (opposite peripheral edge portion) 302 is formed on a peripheral edge portion of the facing surface 204A. A tapered surface 303 is formed on the lower surface of the annular projection 302 and decreases toward the outside in the radial direction. As shown in FIG. 9, in the case where the diameter of the opposing member 202A is larger than the diameter of the substrate W, the peripheral edge of the opposing member 202A projects beyond the peripheral edge of the substrate W in a plan view.

The control device 3 controls the support member elevating unit 211 so that the opposing surface 204A of the opposing member 202A is close to the approaching position of the upper surface of the substrate W held by the rotary jig 5 and is retracted to a position that is largely retracted above the rotary jig 5 Lifting from time to time. When the opposing member 202A is located at the close position, the lower surface 33c (see FIG. 2) of the flange 33 of the gas nozzle 203 faces the upper surface of the substrate W with a predetermined interval W2 (for example, about 6 mm). In this state, as shown in FIG. 9, the outer peripheral end 303 a of the tapered surface 303 is in the vertical direction, and is located below the upper surface of the substrate W. Therefore, the space defined by the opposing surface 204A and the upper surface of the substrate W forms a closed space that is almost sealed from the outer space. Moreover, the interval between the upper edge of the upper surface of the substrate W and the annular protrusion 302 (that is, the tapered surface 303) is set to be significantly more than the interval between the central portion of the opposing surface 204A and the central portion of the upper surface of the substrate W. For the narrow.

The substrate processing apparatus 301 of the third embodiment performs, for example, the same processing as that of the substrate processing apparatus 201 of the second embodiment. That is, in the drying step (step S6 in FIG. 3), the control device 3 controls the support member elevating unit 211, and arranges the facing member 202A at the approach position.

In addition, in the third embodiment, in addition to the functions and effects described in the second embodiment, the space defined by the opposing surface 204A and the upper surface of the substrate W is almost sealed from the outer space, so it is supplied to the opposing surface. The mixed gas (IPA vapor + N ₂ ) in the space 210A between 204A and the upper surface of the substrate W is not easily discharged from the space 210A. Therefore, the outflow of the mixed gas (IPA vapor + N ₂ ) from the vicinity of the upper surface of the substrate W is further suppressed. Thereby, the surrounding environment of the boundary 46 can be continuously maintained as a state richer in IPA vapor.

Although the three embodiments of the present invention have been described above, the present invention may be implemented in other forms.

For example, in the first processing example of the first embodiment (the processing examples of the second and third embodiments are also the same), the increase in the flow rate of the mixed gas (IPA vapor + N ₂ ) and the difference with the substrate W As an example, the case where the liquid film removal area 45 is enlarged by the increase in the rotation speed is described, but the liquid film removal area 45 may be enlarged only by increasing the flow rate of the mixed gas (IPA vapor + N ₂ ) and the substrate W. This is achieved by increasing one of the rotation speeds.

In each of the above-mentioned embodiments, it has been explained that before the discharge of the mixed gas (IPA vapor + N ₂ ) from the first outlet 35 is started, the mixed gas (IPA vapor + N) from the second outlet 39 is started. ₂ ) Ejection, but it is also possible to set the ejection start timing of the mixed gas (IPA vapor + N ₂ ) from the first ejection outlet 35 and the ejection start timing of the mixed gas (IPA vapor + N ₂ ) from the second ejection outlet 39 For the same.

In each of the above embodiments, the gas discharged from the first and second discharge ports 35 and 39 is described as a mixed gas (IPA vapor + N ₂ ), but an IPA vapor (N ₂ gas-free) ( The vapor of the low surface tension liquid) is used as the gas discharged from the first and second discharge ports 35 and 39.

In addition, although IPA, which is an example of an organic solvent having a surface tension lower than that of a rinsing liquid, has been described as a low surface tension liquid, as the organic solvent, in addition to IPA, for example, methanol, ethanol, acetone, and HFE can be used. (Hydrofluoroether) and the like.

In each of the above embodiments, the case where the processing liquid constituting the liquid film 44 is a rinse liquid is described as an example, but the processing liquid constituting the liquid film may be IPA (liquid). At this time, the vapor of the low surface tension liquid contained in the gas discharged from the first and second discharge ports 35 and 39 may be HFE or EG (ethylene glycol).

In addition, although the configuration has been described in which the gas nozzles 27 and 203 are configured to separate the annular outlet 50 and the annular second outlet 39 by the flange 33, the structure is not limited to this structure, and of course Other nozzle shapes can be used.

The types of the gas (the first gas) discharged from the first discharge port 35 and the gas (the second gas) discharged from the second discharge port 39 may be different from each other.

In each of the above embodiments, the case where the substrate processing apparatuses 1, 201, and 301 are apparatuses for processing a disc-shaped substrate W has been described. However, the substrate processing apparatuses 1, 201, and 301 may be applied to liquid crystals. A display device is a device that processes a polygonal substrate such as a glass substrate.

Although the embodiments of the present invention have been described in detail, these are only specific examples for clarifying the technical content of the present invention, and the present invention should not be limited to these specific examples. The scope of the present invention is only The scope of the attached patent is limited.

This application corresponds to Japanese Patent Application No. 2015-43708 filed with the Japanese Patent Office on March 5, 2015 and Japanese Patent Application No. 2016-28312 filed with the Japanese Patent Office on February 17, 2016. The application All disclosures are incorporated herein by reference.

27‧‧‧gas nozzle

31‧‧‧Inner cylinder (1st cylinder)

31a‧‧‧ lower part

32‧‧‧ outer cylinder (second cylinder)

32a‧‧‧ lower edge

33‧‧‧ flange

33a‧‧‧outer end

33b‧‧‧upper surface

33c‧‧‧ lower surface

34‧‧‧The first gas flow path

35‧‧‧The first spit exit

36‧‧‧Cylinder

37‧‧‧Locking Department

38‧‧‧ 2nd gas flow path

39‧‧‧The second exit

40‧‧‧The first gas piping

42‧‧‧ 2nd gas piping

44‧‧‧ liquid film

45‧‧‧Liquid film removal area

46‧‧‧ border

47‧‧‧ border section

48‧‧‧ mixed gas flow

49‧‧‧Marangoni Convection

50‧‧‧Circle Exit

SP‧‧‧ Space

W‧‧‧ substrate

W1‧‧‧ interval

Claims (12)

A substrate processing method includes: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on an upper surface of the substrate to form a liquid film covering the upper surface of the substrate; and a liquid film forming step Then, in order to form a liquid film removal region from the liquid film removal liquid film of the processing liquid, a first gas containing a low surface tension liquid vapor having a lower surface tension than the processing liquid is discharged through a first discharge port. And a first gas discharge step of blowing the first gas in a direction intersecting the upper surface of the liquid film of the treatment liquid; and a step of vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid. The second gas is a second gas which is different from the first discharge port and is arranged vertically above the first discharge port in a vertical direction, and the second gas is discharged laterally and radially along the upper surface. A discharging step; and a liquid film removing region expanding step of expanding the liquid film removing region; the first gas system hits the upper surface and flows along the upper surface to form the The first gas flow in which the liquid film is pushed outward to expand the liquid film removal area, the second gas system flows over the first gas flow, and is removed in the liquid film expanded by the first gas flow Outside the region, a second gas flow is formed that flows along the upper surface of the liquid film. A substrate processing method includes: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on an upper surface of the substrate to form a liquid film covering the upper surface of the substrate; and a liquid film forming step Then, in order to form a liquid film from the liquid film of the treatment liquid, The liquid film removing area discharges a first gas containing a vapor of a low surface tension liquid having a lower surface tension than the treatment liquid, and blows the liquid film of the treatment liquid in a direction crossing the upper surface. A first gas discharge step of one gas; a second gas discharge step of discharging a second gas containing a low surface tension liquid vapor having a lower surface tension than the treatment liquid along the upper surface in a lateral and radial manner. And the step of expanding the liquid film removal area to expand the liquid film removal area; the first gas system hits the upper surface and flows along the upper surface to form the liquid film by pushing the liquid film outward A first gas flow with an enlarged film removal region, the second gas system flows over the first gas flow, and is formed along the liquid film on the outside of the liquid film removal region enlarged by the first gas flow. The second gas flow flowing on the surface. The substrate processing method according to claim 1 or 2, wherein the first gas discharge step and the second gas discharge step are performed in parallel. The substrate processing method according to claim 1 or 2, wherein the second gas discharge step is started before the first gas discharge step is started. The substrate processing method according to claim 1 or 2, wherein the step of expanding the liquid film removal region includes a first flow rate increasing step of increasing a flow rate of the first gas after the discharge of the first gas is started. The substrate processing method further includes a second flow rate increasing step of gradually increasing the flow rate of the second gas after the discharge of the second gas is started. According to the substrate processing method of claim 1, wherein the processing liquid system includes a rinse liquid, and the low surface tension liquid system includes an organic solvent. A substrate processing apparatus includes: A substrate holding unit for horizontally holding a substrate; a processing liquid supply unit for supplying a processing liquid to an upper surface of the substrate; a nozzle having a first outlet for discharging a gas downwardly, and is vertical to the first A second discharge port for discharging gas in a lateral direction is provided above the discharge port. A first gas supply unit supplies the first discharge port with a vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid. A first gas; a second gas supply unit for supplying a second gas containing a low surface tension liquid having a lower surface tension than the treatment liquid to the second discharge port; and a control unit for controlling the treatment liquid A supply unit, the first gas supply unit, the second gas supply unit, and the substrate rotation unit; the control unit is configured to supply a processing liquid on the upper surface of the substrate to form a liquid film covering the processing liquid on the upper surface of the substrate A liquid film forming step; after the liquid film forming step, in order to form a liquid film removing area from which the liquid film of the processing liquid is removed, The first gas is ejected from the first outlet, and the first gas is ejected from the processing film by spraying the first gas with the first gas. The second gas is discharged from the second outlet along the upper surface of the substrate. A second gas discharge step that discharges laterally and radially; and a liquid film removal area expansion step that enlarges the liquid film removal area, the first gas system hits the upper surface and flows along the upper surface to form A first gas flow that pushes the liquid film outward to expand the liquid film removal area, the second gas system flows above the first gas flow, and the liquid that is expanded by the first gas flow A second gas flow flowing along the upper surface of the liquid film is formed outside the film removal region. The substrate processing apparatus according to claim 7, wherein the nozzle includes a first cylinder having a first flow path through which the first gas flows, and a lower end of the cylinder is formed in the nozzle. The first outlet is partially formed, and a flange is provided at the lower end portion of the first cylinder; the space between the upper surface of the substrate and the flange of the first gas system discharged from the first outlet is provided. Circulation. The substrate processing apparatus according to claim 8, wherein the second outlet is disposed above the flange. The substrate processing apparatus according to claim 9, wherein the nozzle further includes a second cylinder, which surrounds the first cylinder, and defines a second region through which the second gas circulates between the first cylinder and the first cylinder. Flow path; the second outlet is formed by the second cylinder and the flange. The substrate processing apparatus according to any one of claims 7 to 10, further comprising an opposing member, which faces the upper surface of the substrate, and has a means for guiding the second gas discharged from the second discharge port. Opposite. The substrate processing apparatus according to claim 11, wherein the facing member has a facing peripheral edge portion that faces the peripheral edge portion of the upper surface of the substrate, and forms a facing edge relative to the peripheral edge portion of the upper surface. The interval between the central portion of the surface and the central portion of the upper surface of the substrate is narrower.