JPH0997757A - Substrate rotary-type developing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate rotary-type developing device which is capable of developing a substrate uniformly throughout its surface preventing a rank odor of developing solution from leaking out. SOLUTION: A lower exhaust structure composed of an exhaust zone 7d and a cup exhaust vent 10 is provided to the base of a spray preventing cup 4 used for recovering developing solution, an upper exhaust structure composed of an exhaust zone 12 and an upper exhaust vent 13 is provided to the upper part of an odor dispersion preventing cylindrical member, and an exhaust path of an exhaust switch 20 is switched while developing solution is fed to the surface of a substrate W to develop, whereby the spray preventing cup 4 is stopped from being exhausted through the intermediary of the upper exhaust structure. On the other hand, an exhaust operation is carried out through the intermediary of the upper exhaust structure provided to the upper part of the cylindrical member 11, whereby a flow of air is restrained from acting on the substrate W in a developing process, and a rank odor of developing solution is exhausted through the upper part of the cylindrical member 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate rotary developing apparatus for developing and forming a pattern of a photoresist film on a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device and a glass substrate for a photomask. In particular, the present invention relates to a technique for developing in a state where the developing solution is piled up on a substrate by utilizing the surface tension of the developing solution (so-called paddle developing method).

[0002]

2. Description of the Related Art A conventional apparatus will be described below with reference to FIG. The surface of a substrate W, such as a semiconductor wafer, to be processed is covered with a photoresist film having a predetermined pattern baked and exposed. The substrate W is supported substantially horizontally by the rotatable spin chuck 1.
A scatter preventive cup 4 for collecting the developer is provided around the spin chuck 1, and a cup exhaust port 10 for forcibly exhausting the inside of the cup at the bottom of the scatter preventive cup 4 and an exhaust for discharging the used developer. A liquid port 8 is provided. A cylindrical member 11 is connected to the upper end of the scattering prevention cup 4 to prevent the odor of the developing solution from spreading to the surroundings. Further, a nozzle 14 for supplying a developing solution onto the substrate W is provided above the spin chuck 1.

In the conventional apparatus constructed as described above, when the substrate W is held on the spin chuck 1, the developing solution L is ejected from the nozzle 14 and the developing solution L is deposited on the substrate W.
Is puddle. In that state, the development process proceeds, and when the development is completed, the spin chuck 1 rotates at a high speed to shake off the developing solution on the substrate W, and a cleaning solution such as pure water is sprayed from another nozzle to clean the substrate W. It After the supply of the cleaning liquid is stopped, the rotation of the substrate W is continued for a certain period of time, whereby the substrate W is drained and dried.

During such a series of development processing, downflow (flow of clean air vertically downward) DF in the clean room in which the development device is installed is introduced into the scattering prevention cup 4 from the upper opening of the cylindrical member 11. By taking in and forcibly exhausting through the cup exhaust port 10 of the scattering prevention cup 4, the odor of the developing solution is prevented from spreading to the outside of the apparatus, and mist such as the developing solution generated in the scattering prevention cup 2 is prevented. It is arranged so that it does not adhere to the substrate W.

[0005]

However, the prior art having such a structure has the following problems. That is, in the conventional apparatus, the downflow is taken into the scattering prevention cup 4 through the tubular member 11 and exhausted from the bottom of the cup while the developing solution is put on the substrate W and the development process is being performed. Since the airflow flows around the substrate W during the development process, the volatilization of the developing solution from the peripheral portion of the substrate is promoted as compared with the central portion of the substrate. Therefore, more heat of vaporization of the developer is taken from the peripheral portion of the substrate, so that the temperature of the peripheral portion of the substrate is lower than that of the central portion of the substrate, and the temperature of the substrate as a whole varies greatly. As a result, according to the conventional apparatus, there is a problem in that development unevenness (nonuniformity of line width of a pattern obtained by development) occurs. In order to avoid such development unevenness, if the exhaust in the scattering prevention cup is stopped during the development process, the odor of the developer cannot be prevented from diffusing out of the apparatus.

The present invention has been made in view of the above circumstances, and prevents the development liquid from leaking odors.
It is an object of the present invention to provide a substrate rotary developing device capable of improving the in-plane uniformity of development processing.

[0007]

The present invention has the following configuration in order to achieve the above object. That is, the invention according to claim 1 is a substrate holding means for holding a substrate rotatably in a horizontal posture, a developing solution supply means for discharging a developing solution onto the substrate, and a peripheral portion around the substrate holding means. A scattering prevention cup for collecting the developer, a tubular member for preventing odor diffusion arranged at the upper end of the scattering prevention cup, and a lower exhaust structure arranged at the bottom of the scattering prevention cup, In a substrate rotary developing device configured to forcibly exhaust mist of developer and the like scattered in the scattering prevention cup through the lower exhaust structure, an upper exhaust structure disposed above the tubular member, At least while the surface of the substrate is being filled with a developing solution for development, the exhaust in the shatterproof cup via the lower exhaust structure is stopped, and the upper part of the tubular member via the upper exhaust structure is stopped. Exhaust the It is those with the air switching means.

According to a second aspect of the present invention, there is provided a substrate holding means for holding the substrate rotatably in a horizontal posture, a developing solution supplying means for discharging a developing solution onto the substrate, and a periphery of the substrate holding means. An anti-scattering cup for collecting the developer provided, a tubular member for preventing odor diffusion disposed at the upper end of the anti-scattering cup, and a lower exhaust structure disposed at the bottom of the anti-scattering cup. In the substrate rotary developing device configured to forcibly discharge mist of the developing solution and the like scattered in the scattering prevention cup through the lower exhaust structure, an upper exhaust structure disposed above the tubular member. , At least while the surface of the substrate is being filled with a developing solution for development,
Exhaust control means for restricting exhaust in the scatter prevention cup via the lower exhaust structure and for exhausting the upper part of the tubular member via the upper exhaust structure.

[0009]

The operation of the invention described in claim 1 is as follows. When the developing solution is discharged onto the substrate held by the substrate holding means and is piled up, the exhaust switching means stops the exhaust in the scattering prevention cup through the lower exhaust structure and the cylinder through the upper exhaust structure. Exhaust from the upper part of the member. As a result, the downflow that tries to flow down into the shatterproof cup from the upper opening of the tubular member is exhausted through the upper exhaust structure of the tubular member, and therefore does not reach the substrate in the shatterproof cup. Therefore, since the air flow does not hit the substrate during the development process, the volatilization amount of the developing solution from the substrate surface becomes substantially uniform over the entire surface of the substrate. As a result, the temperature distribution on the substrate becomes uniform, so that the in-plane uniformity of the developing process is ensured. Further, since the gas (odor) of the developing solution volatilized from the substrate surface during the developing process is exhausted together with the downflow through the upper exhaust structure of the tubular member, the odor of the developing solution does not leak out of the apparatus.

The operation of the invention described in claim 2 is as follows. When the developing solution is discharged and piled up on the substrate held by the substrate holding means, the exhaust adjusting means limits the exhaust in the splash prevention cup through the lower exhaust structure, and the cylinder through the upper exhaust structure. Exhaust from the upper part of the member. As a result, most of the downflow that attempts to flow into the shatterproof cup from the upper opening of the tubular member is exhausted through the upper exhaust structure of the tubular member, and the rest is exhausted through the lower exhaust structure. Therefore, since the air flow hardly hits the substrate during the development process, the volatilization amount of the developing solution from the substrate surface becomes substantially uniform over the entire surface of the substrate. As a result, the temperature distribution on the substrate becomes uniform, so that the in-plane uniformity of the developing process is ensured. Further, since the gas (odor) of the developing solution volatilized from the substrate surface during the developing process is exhausted through the lower exhaust structure, the odor of the developing solution does not leak out of the apparatus.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a vertical cross-sectional view showing the structure of a main part of an embodiment of a substrate rotary developing apparatus according to the present invention.

In the figure, reference numeral 1 is a spin chuck for sucking and holding a substrate W such as a semiconductor wafer to be developed in a horizontal posture. The spin chuck 1 is linked to an output shaft 3 of a motor 2. A scattering prevention cup 4 is disposed around the spin chuck 1 to prevent the recovery of the developing solution and the scattering of the developing solution.

The shatterproof cup 4 comprises an upper cup 5, a circular straightening member 6 and a lower cup 7. The upper cup 5 has an upper opening 5a and an inclined surface 5b for guiding the developer scattered by the rotation of the substrate W downward. The upper cup 5 is fitted in the upper end portion of the outer peripheral wall 7 a of the lower cup 7.

The circular rectifying member 6 is fitted into the upper end portion of the inner peripheral wall 7b of the lower cup 7 so as to be positioned below the spin chuck 1. Then, the air flow that flows in from the opening 5 a and flows down along the peripheral edge of the substrate W is rectified to rectify the air flow.
In addition, the inclined straightening surface 6a is provided for guiding the developer droplets (mist) guided downward by the inclined surface 5b of the upper cup 5 to the lower cup 7 while being guided by the airflow.

The lower cup 7 is provided with a ring-shaped drainage zone 7c inscribed in the lower portion of the outer peripheral wall 7a and a ring-shaped exhaust zone 7d formed inside the drainage zone 7c. At the bottom of the drainage zone 7c, a pair of drainage ports 8 (however, only one drainage port is shown in FIG. 1 for convenience of drawing is shown) at opposing positions sandwiching the substrate W in a plan view. .
The drainage port 8 is connected to a drainage tank 9 so as to communicate therewith, and collects the used developer and the like. At the bottom of the evacuation zone 7d, the opposing positions (the drainage port 8 and the liquid ejection port 9 that sandwich the substrate W in plan view are sandwiched).
A pair of cup exhaust ports 10 (shifted by 0 °) (however, in FIG. 1, only one exhaust port is shown for convenience of drawing)
Are arranged. The cup exhaust port 10 is connected to an exhaust switching unit 20 which will be described later. Exhaust zone 7d
The cup exhaust port 10 corresponds to the lower exhaust structure in the present invention.

At the upper end of the upper cup 5, a cylindrical tubular member 11 is provided so as to surround the opening 5a so as to prevent the odor of the developer from diffusing. A ring-shaped exhaust zone 12 is formed on the outer peripheral portion of the upper end of the tubular member 11, and a pair of upper exhaust ports 13 are formed in the exhaust zone 12.
Are arranged at opposite positions. The upper exhaust port 13 is communicatively connected to an exhaust switching unit 20 described later. Exhaust zone 1
2 and the upper exhaust port 13 correspond to the upper exhaust structure in the present invention.

A developing solution discharge nozzle 14 for discharging a developing solution onto the upper surface of the substrate W is provided inside the cylindrical member 11. The developer discharge nozzle 14 is configured to be movable between a position above the center of rotation of the spin chuck 1 and a retracted position that allows loading / unloading of the substrate W. A developing solution discharge port 14a is provided on the lower peripheral wall of the developing solution discharge nozzle 14, and the developing solution is gently discharged onto the substrate W through the discharging port 14a.

The exhaust switching unit 20 is alternatively selected 2
A box body 21 having two exhaust passages is provided. Two intake ports 2 are provided on one side wall (upper side in FIG. 1) of the box body 21.
2a and 22b are provided, and a common exhaust port 23 is provided on a side wall (lower side in FIG. 1) facing the 2a and 22b. One intake port 22a is the cup exhaust port 10 of the shatterproof cup 4.
The other intake port 22b is connected to the upper exhaust port 13 of the tubular member 11.
Are connected to each other. Exhaust port 2 of box 21
3 is connected to the exhaust pump 24 for communication. Inside the box body 21, there is a swing plate 25 for switching between two exhaust flow paths.
Is swingably supported. This swing plate 25 is a box 2
It is connected to the rod of the air cylinder 26 attached to the No. 1. Then, the control unit 27 which controls the operation sequence of the present device, the air cylinder 26 via the direction switching valve 28.
Is configured to be driven.

The operation of the embodiment apparatus configured as described above will be described with reference to the flowchart of FIG. A transfer robot (not shown) loads the substrate W into the apparatus, and the spin chuck 1 holds the substrate by suction (step S1). Subsequently, the developer discharge nozzle 14 moves upward above the center of rotation of the spin chuck 1 to discharge the developer onto the substrate W.
During discharge of the developing solution, in order to discharge the mist of the developing solution generated in the scattering prevention cup 4, the exhaust (downward exhaust) is performed from the cup exhaust port 10 of the scattering prevention cup 4, while the upper exhaust of the cylindrical member 11 is exhausted. The exhaust (upward exhaust) from the port 13 is stopped (step S2). That is, as shown in FIG. 3, the control unit 27 drives the air cylinder 26 to extend in synchronization with the sequence from the loading of the substrate W to the discharge of the developing solution. As a result, the rocking plate 25 of the box body 21 is rocked and displaced clockwise in FIG. 3, and the exhaust flow path (lower exhaust flow path) in which the intake port 22a and the exhaust port 23 communicate with each other is selectively set. As a result, the downflow DF in the clean room taken from the upper end opening of the tubular member 11 flows down in the tubular member 11,
Passing through the vicinity of the periphery of the substrate W and flowing through the exhaust zone 7d,
The air is exhausted through the cup exhaust port 10.

When the upper surface of the substrate W is filled with the developing solution, the supply of the developing solution from the developing solution discharge nozzle 14 is stopped. At the same time, the exhaust from the cup exhaust port 10 of the scattering prevention cup 4 (downward exhaust) is stopped, while the exhaust from the upper exhaust port 13 of the tubular member 11 (upward exhaust) is performed (step S3). That is, as shown in FIG. 4, the control unit 27 drives the air cylinder 26 to contract in synchronization with the stop of the discharge of the developing solution. As a result, the swing plate 25 of the box body 21
4 is oscillated and displaced counterclockwise in FIG. 4, and is switched to the exhaust flow path (upper exhaust flow path) in which the intake port 22b and the exhaust port 23 are in communication. As a result, the downflow DF in the clean room taken from the upper end opening of the tubular member 11 is
No. 1 exhaust zone 12 and is exhausted through the upper exhaust port 13. This upward exhaust is maintained until the developing process is completed (step S4).

As described above, when the lower exhaust is stopped and the upper exhaust is performed during the developing process, the air flow does not hit the substrate W during the developing process. Therefore, the volatilization amount of the developing solution from the surface of the substrate W becomes substantially uniform over the entire surface of the substrate,
Variation in the temperature within the substrate surface due to the non-uniformity of the amount of volatilization of the developing solution is suppressed, and in-plane uniformity of the developing process is ensured. Further, since the developer gas (odor) volatilized from the substrate surface during the developing process is exhausted together with the downflow DF through the upper exhaust port 13 of the tubular member 11, the odor of the developer leaks out of the apparatus. Nor.

When the completion of the development of the substrate W is confirmed by the lapse of a preset development time or by optically detecting the development end point (step S4), the spin chuck 1 rotates at a high speed to rotate the substrate W. When the developing solution is shaken off, a cleaning solution such as pure water is sprayed onto the substrate W from a cleaning nozzle (not shown) to wash away the developing solution. Then, after the injection of the cleaning liquid is stopped, the substrate W is rotated at a high speed for a required time, so that the substrate W is drained and dried (step S5). Simultaneously with the completion of the development and the cleaning / drying process, the control unit 27 drives the air cylinder 26 to extend so as to switch the exhaust flow path in the box body 21, thereby lowering the downward exhaust air as shown in FIG. To do. As a result, the mist of the developing solution and the cleaning solution scattered by the high speed rotation of the spin chuck 1 is carried on the airflow taken into the scattering prevention cup 4 and discharged through the cup exhaust port 10. Cleaning of substrate W
When the drying process is completed, the substrate W is carried out of the apparatus by the transfer robot (step S6), and then step S1.
The processing from S6 to S6 is repeatedly executed.

In order to confirm the effect of the apparatus of this embodiment, the temperature of the developing solution in the central portion of the substrate and the peripheral portion (5 mm inside from the peripheral edge) immediately after the developing solution was poured onto a semiconductor wafer having a diameter of 8 inches was measured. The results of measurement with a thermocouple over time are shown in FIG. For comparison, FIG. 6 shows a similar temperature change of the developer when the conventional apparatus is used. Needless to say, during the liquid development, the apparatus of this embodiment in FIG. 5 stops the downward exhaust and only the upward exhaust, and the conventional apparatus in FIG. 6 performs the downward exhaust. The initial temperature of the developer is 23 ° C.
Is set to In addition, temperature measurement is 1
The development is carried out for 80 seconds, but the normal development time is 60 to 90 seconds from the time when the developer is puddle-filled. As is apparent from a comparison of FIGS. 5 and 6, according to the apparatus of this embodiment in which the lower exhaust is stopped during the liquid development processing and only the upper exhaust is performed, the conventional apparatus for performing the lower exhaust during the liquid development processing. It can be seen that the temperature difference between the central portion of the substrate and the peripheral portion of the substrate can be made extremely small as compared with.

The present invention is not limited to the above-mentioned embodiments, but can be modified as follows. (1) In the above-described embodiment, the switching between the upper exhaust and the lower exhaust is performed by swinging and displacing the swing plate 25 in the box body 21, but this is switched by using an electromagnetic opening / closing valve or the like. Good.

(2) In the apparatus of the embodiment, the substrate W under development processing is supported by the spin chuck 1, but the substrate W under development processing may be supported by a plurality of pins.

[0026]

[Other Embodiments] FIG. 7 shows a schematic configuration of an apparatus according to another embodiment. The exhaust adjustment unit 30 includes a box body 21 having two exhaust passages that are selectively selected or both are exhausted. Two intake ports 2 are provided on one side wall of the box body 21.
2a and 22b are provided, and a common exhaust port 23 is provided on the side wall facing them. One intake port 22a is connected to the cup exhaust port 10 of the shatterproof cup 4, and the other intake port 2a.
2b are connected to the upper exhaust port 13 of the tubular member 11, respectively. The exhaust port 23 of the box body 21 is an exhaust pump 24.
Is connected to the A swing plate 25 for switching between two exhaust flow paths is swingably supported inside the box body 21. The rocking plate 25 is an air cylinder (lock-up cylinder, cylinder with brake) 31 attached to the box body 21 that can stop the expansion and contraction of the rod at an arbitrary position.
Is connected to the rod. The control unit 27 that controls the operation sequence of the present device is configured to drive and control the air cylinder 31 via the direction switching valve 28.

The operation of the apparatus of another embodiment configured as described above is different only in the step S3 and subsequent steps of the flowchart of FIG. 2, and that point will be described. On the upper surface of the substrate W, the developer L
The supply of the developing solution L from the developing solution discharge nozzle 14 is stopped when the liquid is filled with the solution. At the same time, the exhaust (downward exhaust) from the cup exhaust port 10 of the scattering prevention cup 4 is limited (10%), while the upper exhaust port 13 of the tubular member 11 is restricted.
Exhaust (90%) from above (upward exhaust) (step S
3). That is, the control unit 27 drives the air cylinder 31 to contract in synchronization with the stop of the discharge of the developing solution L, so that the swing plate 25 of the box body 21 has 10% in the intake port 22a and 9% in the intake port 22b.
It is switched to 0% communication. As a result, the tubular member 11
Most (90%) of the downflow DF in the clean room taken in from the upper end opening of the chamber flows into the exhaust zone 12 of the tubular member 11, is exhausted through the upper exhaust port 13, and the remaining part (10%) is the cup. The gas is exhausted from the exhaust port 10.
This upper exhaust port 13 (90%) and cup exhaust port 10 (1
The exhaust of 0%) is maintained until the development processing is completed (step S4).

As described above, the upper exhaust port 1 during the developing process.
When 3 (90%) and the cup exhaust port 10 (10%) are exhausted, the substrate W is hardly exposed to the air flow during the development processing. Therefore, the volatilization amount of the developing solution L from the surface of the substrate W becomes substantially uniform over the entire surface of the substrate, so that the developing solution L
The unevenness of the temperature within the substrate surface due to the non-uniformity of volatilization is suppressed, and the in-plane uniformity of the developing process is secured. Also,
Developer gas (odor) that volatilizes from the substrate surface during development processing
Is exhausted through the lower exhaust structure (cup exhaust port 10), so that the odor of the developer does not leak out of the apparatus.

[0029]

As is apparent from the above description, according to the invention as set forth in claim 1, the downward exhaust from the bottom of the scattering prevention cup is stopped during the liquid development process to prevent odor diffusion. Since the air is exhausted from the upper part of the member, the air flow does not act on the substrate during the development process. Therefore, the temperature distribution on the substrate becomes uniform, and the in-plane uniformity of the developing process can be improved. Further, since the odor of the developing solution during the developing process is exhausted from above the tubular member along with the downflow, the odor of the developing solution does not leak out of the apparatus.

According to the second aspect of the invention, the downward exhaust from the bottom of the scattering prevention cup is restricted during the liquid development.
Most of the air is exhausted from the upper part of the odor diffusion preventing cylindrical member, so that the air flow hardly acts on the substrate during the development process. Therefore, the temperature distribution on the substrate becomes uniform, and the in-plane uniformity of the developing process can be improved. Further, since the odor of the developing solution during the developing process is exhausted by the downward exhaust from the bottom of the scattering prevention cup, it does not leak out of the apparatus.

[Brief description of drawings]

FIG. 1 is a vertical cross-sectional view showing the configuration of an embodiment of a substrate rotary developing apparatus according to the present invention.

FIG. 2 is a flowchart showing a development processing process by the apparatus of the embodiment.

FIG. 3 is a vertical cross-sectional view showing a state of downward exhaust.

FIG. 4 is a vertical sectional view showing a state of upward exhaust.

FIG. 5 is a graph showing a change over time in the temperature of the developing solution when the apparatus of the example is used.

FIG. 6 is a graph showing a change over time in the temperature of the developing solution when a conventional apparatus is used.

FIG. 7 is a vertical cross-sectional view showing the configuration of another embodiment of the device.

FIG. 8 is a longitudinal sectional view showing a configuration of a conventional device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Spin chuck (substrate holding means) 4 ... Scatter prevention cup 7d ... Exhaust zone (lower exhaust structure) 10 ... Cup exhaust port (lower exhaust structure) 11 ... Cylindrical member 12 ... Exhaust zone (upper exhaust structure) 13 ... Upper exhaust Port (upper exhaust structure) 14 ... Developer discharge nozzle (developing solution supply means) 20 ... Exhaust gas switching section (exhaust gas switching means) 30 ... Exhaust gas adjusting section (exhaust gas adjusting means) W ... Substrate

Claims (2)

[Claims] 1. A substrate holding means for holding a substrate rotatably in a horizontal posture, a developing solution supply means for discharging a developing solution onto the substrate, and a developing solution recovery device arranged around the substrate holding means. Of the shatterproof cup, an odor diffusion preventing cylinder member arranged at the upper end of the shatterproof cup, and a lower exhaust structure arranged at the bottom of the shatterproof cup. In a substrate rotary developing device configured to forcibly discharge mist of scattered developer or the like through the lower exhaust structure, an upper exhaust structure arranged above the tubular member, and at least the surface of the substrate. While developing and piling up the developing solution, the exhaust in the scattering prevention cup via the lower exhaust structure is stopped, and the upper part of the tubular member is exhausted via the upper exhaust structure. Means and A substrate rotating type developing device characterized by the above. 2. A substrate holding means for holding a substrate rotatably in a horizontal posture, a developing solution supply means for discharging a developing solution onto the substrate, and a developing solution recovery device arranged around the substrate holding means. Of the shatterproof cup, an odor diffusion preventing cylinder member arranged at the upper end of the shatterproof cup, and a lower exhaust structure arranged at the bottom of the shatterproof cup. In a substrate rotary developing device configured to forcibly discharge mist of scattered developer or the like through the lower exhaust structure, an upper exhaust structure arranged above the tubular member, and at least the surface of the substrate. Exhaust adjustment for restricting exhaust in the splash prevention cup via the lower exhaust structure and exhausting the upper part of the tubular member via the upper exhaust structure during development by developing liquid Means and A substrate rotating type developing device characterized by the above.