JP2007036268A - Substrate processing method and substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress deterioration due to the influence of heat of processing liquid, for example resist liquid or developer as much as possible. <P>SOLUTION: A storing container 499 is arranged under an interface unit portion IFU. The arranged position is set lower than a delivering part 4 or a receiving part 5 for transferring a substrate with an exposure device from the lower part of a substrate carry-in/out port 19 of a substrate transfer section by a vertical distance V101. A downflow DF whose temperature is controlled acts directly to at least the substrate carry-in/out port 19, or the delivering part 4, or the receiving part 5 inside the interface unit portion IFU, and heat transfer from the substrate carry-in/out port 19, or the delivering part 4, or the receiving portion 5 is relaxed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus.

When forming an electronic material such as a substrate, for example, a semiconductor wafer, it is generally known to use a photolithography technique using a photoresist. An example of such a technique is Japanese Patent Laid-Open No. 2-296316, which is a Japanese publication.
JP-A-2-296316

  This technology discloses a paddle development system as a development process, and a substrate configured to be able to be transferred to and from the rotation stage without holding the substrate on a rotation stage configured to be movable up and down during the development process of the substrate. The substrate was supported by a ring support frame having a rubber ring in contact with the back surface, and development processing was performed in the cover.

Another example of the technology is Japanese Patent No. 3257038.
Japanese Patent No. 3257038

  This technique uses an isolating means having a pin that makes point contact with the back surface of the substrate, which is configured to be able to move to and from the rotation stage without holding the substrate on the rotation stage during the development processing of the substrate. The substrate was supported and developed under a down flow controlled in temperature and humidity in the cup.

  However, after supplying the developer to the substrate, the substrate is brought close to the temperature and humidity controlled downflow outlet, so the developer on the substrate may spill out due to the increased downflow effect. . As a result, the yield of development processing is reduced. In addition, since the developer was supplied to the substrate in the cup and the development process proceeded, the downflow controlled by temperature and humidity was continuously exhausted from the cup, so the influence of the downflow on the developer on the substrate was significant. In this case, the developer on the substrate may spill due to an increase in the effect of downflow, which causes a reduction in the yield of development processing.

  Further, after separating the substrate from the rotary stage by a ring support frame having a separating means or a rubber ring, or when the substrate is placed on the rotary stage, the developer or rinse solution or development on the substrate Mist of the liquid / rinse liquid wraps around the back surface of the substrate and adheres to the ring support frame or rotating stage equipped with a rubber ring and is generated as mist in the processing chamber when they are dried. Since it adheres, it becomes a mist in the next processing chamber or in the middle of transporting the substrate and contaminates the entire processing apparatus. This causes a decrease in not only the yield of the development processing but also the yield of the entire substrate processing. It was.

  The substrate processing method of the present invention is a substrate processing method for processing a substrate to be processed in each development processing chamber having a plurality of development processing chambers for developing an exposed resist on the substrate to be processed. Supplying a developer to the substrate to be processed while the substrate is stationary, and a step of developing the exposed resist on the substrate to be processed while the substrate to be processed is stationary; and The steps of moving the substrate to be processed downward without supplying the rinsing liquid to the substrate to be processed and the step of supplying the rinsing liquid to the substrate to be processed while rotating the substrate to be processed are the development processes. The processing steps of the substrate to be processed in the chamber are provided, and these steps are performed in each of the development processing chambers while being exhausted simultaneously or / and collectively in the plurality of development processing chambers. To do.

  The substrate processing method of the present invention is a substrate processing method having a plurality of development processing chambers for developing an exposed resist on a substrate to be processed, and processing the substrate to be processed in each development processing chamber. Supplying the developer to the substrate to be processed held and depositing the liquid, moving the enclosure surrounding the substrate to be processed upward, and transferring the substrate to be processed from the support mechanism to the holding mechanism; Supplying the rinse liquid to the substrate to be processed while the substrate to be processed is stopped by the support mechanism or / and the substrate to be processed is rotated by the holding mechanism; and rotating the substrate to be processed A step of drying the substrate to be processed, and a step of processing the substrate to be processed in each of the development processing chambers, and these steps are performed in a state where the plurality of development processing chambers are exhausted simultaneously or / and collectively. Implemented in each development chamber Characterized in that it is.

  The substrate processing method of the present invention is a substrate processing method having a plurality of development processing chambers for developing an exposed resist on a substrate to be processed, and processing the substrate to be processed in each development processing chamber. And supplying the developer to the substrate to be held and depositing the liquid, moving the enclosure surrounding the substrate to be processed upward, and holding the substrate from the support mechanism without supplying the rinsing liquid. A step of transferring the substrate to be processed to the mechanism, a step of supplying a rinsing liquid to the substrate to be processed while the substrate to be processed is rotated by the holding mechanism, and a step of rotating the substrate to be processed and drying the substrate to be processed. A step of transferring the substrate to be processed from the holding mechanism to the support mechanism without supplying a rinsing liquid to the substrate to be processed, and a step of moving the enclosure surrounding the substrate to be processed downward. Substrates to be processed in the processing chamber Treatment step comprises, these steps are characterized by being respectively performed at each development processing chamber in a state that is exhausted simultaneously or / and collectively the plurality of developing chamber.

  In the substrate processing method of the present invention, the rinse liquid is preferably pure water.

  In the substrate processing method of the present invention, it is preferable that the development processing of the exposed resist on the substrate to be processed substantially proceeds while the substrate to be processed is held by the support member.

  In the substrate processing method of the present invention, it is preferable that air is exhausted only from the inside of the enclosure, only from the periphery of the enclosure, or from the inside of the enclosure and from the periphery of the enclosure.

  In the substrate processing method of the present invention, when the enclosure moves upward, the inside of the enclosure and the periphery of the enclosure are exhausted, and when the enclosure moves downward, the exhaust is performed only from the inside of the enclosure. Is preferred.

  In the substrate processing method of the present invention, it is preferable that the processing liquid is drained substantially simultaneously from the inside of the enclosure and the periphery of the enclosure.

  In the substrate processing method of the present invention, it is preferable that the exhaust amount of the exhaust gas is a substantially constant exhaust amount only in the inside of the enclosure, or in the inside of the enclosure and the exhaust from the periphery of the enclosure.

  In the substrate processing method of the present invention, it is preferable that the developer supplied to the substrate to be processed is also supplied to an enclosure surrounding the substrate to be processed.

  In the substrate processing method of the present invention, it is preferable that a further circular or square second enclosure surrounding the enclosure is disposed around the enclosure.

  The substrate processing method of the present invention includes a cassette unit having a cassette on which a substrate to be processed is placed, an interface unit for carrying the substrate in and out of another apparatus, and the cassette unit and the interface unit. A substrate processing method for processing a substrate to be processed in a substrate processing apparatus having a plurality of processing units arranged in a stacked manner, wherein the plurality of processing units are arranged on the cassette unit side of the process unit. A container for storing processing liquid used in the process unit is disposed below the interface unit and / or below the process unit, and the process unit includes a plurality of development processes. First process unit with multiple layers and multiple resist coating processes And a second processing unit arranged by stacking, in the configuration, and carrying out the respective process units are collectively referred to an exhaust of said plurality of processing units.

  The substrate processing method of the present invention includes a cassette unit having a cassette on which a substrate to be processed is placed, an interface unit for carrying the substrate in and out of another apparatus, and the cassette unit and the interface unit. A substrate processing method for processing a substrate to be processed in a substrate processing apparatus having a plurality of processing units arranged in a stacked manner, wherein the plurality of processing units are arranged on the cassette unit side of the process unit. A container for storing processing liquid used in the process unit is disposed below the interface unit and / or below the process unit, and the process unit includes a plurality of development processes. A first process unit and a plurality of resist coating units A second process units stacked by placing, in the structure, and performing in the cassette unit side of the respective process units together collectively exhaust of said plurality of processing units.

  In the substrate processing method of the present invention, the exhaust of the plurality of processing units in each process unit is preferably collectively performed after flowing in the parallel arrangement direction of the process units.

  In the substrate processing method of the present invention, it is preferable that exhaust of the plurality of processing units in each process unit is performed collectively after once flowing to the unit side arranged in parallel with the process unit.

  The substrate manufacturing method of the present invention is characterized in that a substrate is manufactured using the substrate processing method.

  The substrate processing apparatus of the present invention includes a control mechanism for performing the substrate processing method.

  The substrate processing apparatus of the present invention is a substrate processing apparatus including a plurality of development processing units for developing the exposed resist on the substrate to be processed, and is configured to be able to transfer the substrate to be processed to a transfer mechanism outside the processing chamber. A support mechanism configured to be able to deliver and receive the support mechanism and the substrate to be processed and to rotate the substrate to be processed, and a substrate to be processed held by the support mechanism. A developer supply mechanism for supplying the developer, a rinse substrate supply mechanism for supplying a rinse solution to the substrate to be processed held by the support mechanism and / or the substrate to be processed held by the holding mechanism; And an exhaust mechanism configured to be capable of exhausting the plurality of development processing units simultaneously or / and collectively.

  The substrate processing apparatus of the present invention is a substrate processing apparatus including a plurality of development processing units for developing the exposed resist on the substrate to be processed, and is configured to be able to transfer the substrate to be processed to a transfer mechanism outside the processing chamber. A supporting mechanism, a holding mechanism configured to receive the substrate to be processed when the supporting mechanism is lowered, and the substrate to be processed is configured to be rotatable, and is held by the supporting mechanism or the holding mechanism. A surrounding body surrounding the substrate to be processed, a developer supply mechanism for supplying the developer to the substrate to be processed held by the support mechanism, and the developer from the developer supply mechanism to the substrate to be processed. A rinsing liquid is supplied to the substrate to be processed held by the support mechanism and / or the substrate to be processed held by the holding mechanism; A rinsing liquid supply mechanism, characterized by comprising a an exhaust mechanism configured to freely exhaust plurality of developing unit simultaneously or / and collectively the.

  The substrate processing apparatus of the present invention is a substrate processing apparatus including a plurality of development processing units for developing the exposed resist on the substrate to be processed, and is configured to be able to transfer the substrate to be processed to a transfer mechanism outside the processing chamber. A supporting mechanism, a holding mechanism configured to receive the substrate to be processed when the supporting mechanism is lowered, and the substrate to be processed is configured to be rotatable, and is held by the supporting mechanism or the holding mechanism. A surrounding body surrounding the substrate to be processed, a developer supply mechanism for supplying a developer to the substrate to be processed held by the support mechanism, and a substrate to be processed held by the support mechanism or / And a rinsing liquid supply mechanism for supplying a rinsing liquid to the substrate to be processed held by the holding mechanism, and the enclosure before the developer is supplied from the developer supplying mechanism to the substrate to be processed. A moving mechanism configured to lower the enclosure after supplying the rinse liquid from the rinse liquid supply mechanism to the substrate to be processed held by the holding mechanism, and the plurality of development processing units. And an exhaust mechanism configured to be exhausted simultaneously or / and collectively.

  In the substrate processing apparatus of the present invention, when the enclosure is raised, exhaust is performed only from the inside of the enclosure, and when the enclosure is lowered, exhaust is performed from the inside of the enclosure and the surroundings of the enclosure. It is preferable.

  In the substrate processing apparatus of the present invention, the processing liquid is drained from the inside of the enclosure and around the enclosure at the same time or / and exhausted from the inside of the enclosure and around the enclosure simultaneously or separately. Is preferred.

  In the substrate processing apparatus of the present invention, when supplying the developer from the developer supply mechanism to the substrate to be processed held by the support mechanism, the developer from the developer supply mechanism is also applied to the enclosure. Preferably it is supplied.

  In the substrate processing apparatus of this invention, it is preferable that the further 2nd enclosure surrounding the said enclosure is arrange | positioned around the said enclosure.

  The substrate processing method of the present invention is characterized in that substrates are sequentially processed using the substrate processing apparatus described above.

  The substrate manufacturing method of the present invention manufactures a substrate using the substrate processing method.

  The present invention is configured to be evacuated from a first peripheral area around the substrate mainly subjected to processing, and further to be evacuated from a second peripheral area between the first peripheral area and the substrate. Therefore, the influence of the air flow on the developer on the substrate can be reduced, and the developer applied to the development process can be appropriately applied to the exposed resist on the substrate, thereby improving the uniformity of the substrate processing. Thus, there is an effect that the yield related to the processing of the substrate can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic plan view showing the overall structure of an embodiment of a liquid processing apparatus, for example, a coating / developing apparatus as a resist processing apparatus.

  The resist processing apparatus 1 includes a cassette mounting unit U1 configured to mount a plurality of cassettes C that can store a plurality of substrates, for example, semiconductor wafers W, and a semiconductor wafer with respect to the cassette C of the cassette mounting unit U1. An exposure process is performed on a cassette unit unit CU composed of a substrate loading / unloading mechanism unit U2 for arranging a substrate loading / unloading mechanism 2 configured to be able to load / unload W one by one and another apparatus, for example, a semiconductor wafer W. Substrate configured to allow the semiconductor wafer W to be transferred into and out of the exposure apparatus 3 to be applied, the receiving section 5 to receive the semiconductor wafer W from the exposure apparatus 3 one by one, and the semiconductor wafer W to be loaded and unloaded one by one. An interface unit IFU composed of the carry-in / out mechanism 6 and a processing unit that performs a predetermined process on the semiconductor wafer W, for example, a coating processing unit COT that applies a resist solution as a liquid processing unit. A development processing unit DEV for developing the exposed resist on the semiconductor wafer W, an inspection processing unit 7 for inspecting the state of the resist film on the semiconductor wafer W with respect to the semiconductor wafer W, and the substrate carry-in / out mechanism 2, 6, the substrate transfer units 8 and 9 configured to be able to carry in and out the semiconductor wafer W one by one, and the substrate transfer units 8 and 9 and the coating processing unit COT / development processing unit DEV / inspection processing unit 7. The main part is composed of the process unit PU composed of the substrate transport mechanism 10 configured to transport the semiconductor wafers W one by one.

  The arms 11 and 12 for holding the semiconductor wafer W of the substrate loading / unloading mechanisms 2 and 6 by vacuum suction or supporting the peripheral edge of the semiconductor wafer W by point contact or line contact are shown in the vertical direction Z1 in FIG. , 2 and forward / backward directions Y1, 2 and rotational directions θ1, 2 are configured to be movable, and the bases 13, 14 of the arms 11, 12 are configured to be movable in the horizontal directions X1, 2 in the figure together with the arms 11, 12. Has been. Further, the arm 17 of the substrate transport mechanism 10 of the process unit PU is configured to support the peripheral edge of the semiconductor wafer W by point contact or line contact, and rotates in the vertical direction Z0 and the forward / backward direction Y0 in the figure. It is configured to be movable in the direction θ0. For convenience, the substrate carry-in / out mechanisms 2 and 6 and the substrate transfer mechanism 10 are configured as described above. However, it goes without saying that an articulated robot may be used, and the substrate carry-in / out mechanism unit U2 and the interface unit unit IFU. It is sufficient that a transport mechanism capable of achieving the above functions is arranged.

  In addition, a plurality of temperature control processing units (not shown) that control the temperature of the semiconductor wafer W to a temperature substantially the same as that in the processing chamber is disposed below each of the substrate transfer units 8 and 9. A plurality of gas processing units (not shown) that perform processing using a processing gas, for example, HMDS gas, are disposed on the semiconductor wafer W below the plurality of temperature control processing units. A plurality of heat treatment parts (not shown) for heating and processing the semiconductor wafer W at a temperature equal to or higher than a predetermined room temperature are stacked and arranged above each of the delivery parts 8 and 9 to constitute a heat treatment part. ing.

  Further, the substrate transfer mechanism 10 of the process unit PU and the substrate carry-in / out mechanism 2 of the cassette unit CU are configured to be able to load and unload the semiconductor wafer W with respect to the inspection processing unit 7 of the process unit PU. The semiconductor wafer W before processing and the processed semiconductor wafer W processed by the above-described processing units and / or exposure apparatuses are inspected, for example, the film thickness of the resist film on the semiconductor wafer W can be inspected. ing.

  Also, filter units (not shown) are provided above the substrate loading / unloading mechanism unit U2, the process unit unit PU, and the interface unit unit IFU of the cassette unit unit CU, respectively.・ It is configured to supply temperature / humidity air whose humidity is set to a predetermined value, and further, the temperature / humidity air is set to a predetermined amount from the exhaust port provided at the bottom of each unit by the exhaust setting mechanism. It is configured so that it can be collected, and a down flow of temperature / humidity air is formed in each unit.

Further, the pressure of each unit unit is caused by the substrate loading / unloading mechanism unit U2 of the cassette unit unit CU by the substrate loading / unloading mechanism unit U2, the process unit unit PU, and the interface unit unit IFU. The pressure of the process unit PU is set higher, the pressure of the process unit PU is set higher than that of the interface unit IFU, and the pressure in the exposure apparatus 3 is higher than that of the interface unit IFU. It is configured to be set high, and it is possible to suppress unnecessary mist from entering the process unit PU or the exposure apparatus 3 and causing adverse effects on the processing of the semiconductor wafer W. Also, the amount of oxygen and / or acidic gas (NOX, SOX, H ₂ S, CO ₂ etc.) and / or basic gas (ammonia, amine etc.) and / or humidity contained in the atmosphere of the cassette unit CU In comparison, the amount contained in the atmosphere of the process unit unit PU and / or the interface unit unit IFU is set to be substantially small. This is to improve the processing yield of the semiconductor wafer W by reducing the influence thereof, particularly in the pre-exposure or post-exposure processing.

  As described above, the walls 20 are provided between the substrate loading / unloading mechanism unit U2 and the process unit unit PU of the cassette unit unit CU or between the process unit unit PU and the interface unit unit IFU so as to block the atmosphere. The substrate loading / unloading ports 19 of the substrate transfer units 8 and 9 and the inspection processing unit 7 are configured to be openable and closable by an opening / closing mechanism (not shown) such as a lid other than the loading / unloading step of the semiconductor wafer W. The substrate carry-in / out mechanism unit U2, the process unit unit PU, and the interface unit unit IFU of the cassette unit unit CU are configured to block the atmosphere.

In addition, a plurality of coating processing units COT of the process unit unit PU are arranged and a plurality of development processing units DEV are arranged in the same manner. The semiconductor wafer W is configured to be able to be loaded into and unloaded from the processing unit by the substrate transfer mechanism 10. As will be described later, the temperature and humidity of the coating processing unit COT and / or the developing processing unit DEV are set to predetermined values, and the pressure in these processing units is determined by the exhaust state in these processing units. Even if it changes, it is set higher than in the process unit unit PU. This is to prevent unnecessary mist from entering the coating processing unit COT and the development processing unit DEV, which are liquid processing units, and adversely affecting the processing of the semiconductor wafer W. In addition, the atmosphere in the coating processing unit COT and / or the development processing unit DEV is oxygen and / or acidic gas (NOX, SOX, H ₂ S, CO) contained in the atmosphere compared to the atmosphere in the process unit PU. ₂ ) and / or basic gas (ammonia, amine, etc.) and / or the amount of humidity is set low. This is to improve the processing yield of the semiconductor wafer W by reducing these influences.

Next, the configuration of the development processing unit DEV will be described with reference to FIGS. 2, 3, and 4.
The development processing unit DEV is provided with an air supply mechanism 30 for supplying air with controlled temperature and humidity set to predetermined values in the processing chamber at the top, and detection by a sensor 30a provided in the processing chamber. The control mechanism 31 is configured to maintain a predetermined temperature and humidity based on the data.

  A chuck 32 as a holding mechanism that holds the back surface of the semiconductor wafer W by vacuum suction is disposed below the processing chamber. The chuck 32 is configured to be rotatable by a rotation drive mechanism, for example, a motor 33. Yes. In this embodiment, the chuck 32 is configured not to move vertically. Since the motor 33 must also move up and down in order to move the chuck 32 up and down, the range of the influence of the heat of the motor 33 on the apparatus is widened, so the influence of the heat on the semiconductor wafer W and the yield is reduced. There is a fear that it will end up. Moreover, in order to suppress the thermal influence, the heat suppression mechanism at the lower part of the processing chamber is systematically increased. For example, to stack a plurality of such processing chambers, it is necessary to make the vertical size of the processing chambers as thin as possible. However, it goes without saying that the system may be configured to move together with the motor 33 as long as such a system is not required.

  A support mechanism 35 that supports the back surface of the semiconductor wafer W is provided below the chuck 32. As shown in FIGS. 3A and 3B, the support mechanism 35 includes a plurality of support pins 36 for supporting the back surface of the semiconductor wafer W by point contact and a semiconductor wafer provided outside the support pins 36. A ring member 37 as a liquid intrusion prevention mechanism for preventing a processing liquid such as a developer or a rinsing liquid from entering the central portion of the back surface of W, and a plurality of members that integrally support the ring member 37 and the support pin 36. Support pillars 38 are provided.

  Further, as shown in FIG. 3B, the height and position of the support pin 36 and the ring member 37 are such that the support pin 36 has a predetermined distance, for example, a processing solution such as a developing solution and / or a rinsing solution. The distance for holding the processing liquid between the back surface of the semiconductor wafer W and the ring member 37 due to the surface tension of the semiconductor wafer W, for example, a distance of 0.5 mm or more that does not contact the semiconductor wafer W, for example, a distance between 1.5 mm to 5 mm (see FIG. Middle L). This is because the ring member 37 is prevented from directly contacting the back surface of the semiconductor wafer W. The contact portion 38a of the support pin 36 that contacts the back surface of the semiconductor wafer W is a member having a higher coefficient of friction and a lower thermal conductivity than the member 39 forming the support pin 36, and the back surface of the semiconductor wafer W. For example, an elastic member is used as a displacement preventing member for preventing lateral displacement when the processing liquid is supplied to the semiconductor wafer W after supporting the back surface of the semiconductor wafer W and preventing the lateral displacement when the semiconductor wafer W is supported. ing. The reason why the thermal conductivity is low is that in-plane uniformity may be excluded due to the effect of heat escaping from the contact portion between the semiconductor wafer W and the support pins 36 during the processing of the semiconductor wafer W. As the material of the contact portion 38a described above, for example, a hard resin such as PEEK / PBI, a ceramic material such as alumina / zirconia, or a rubber material such as perflo is considered.

Further, the ring member 37 has a concavo-convex portion 40 (as a liquid holding portion for holding the developer and / or the rinsing liquid supplied to the semiconductor wafer W at the head with the surface tension between the back surface of the semiconductor wafer W. Liquid intrusion prevention unit). Further, the inner wall of the concavo-convex portion 40 is provided with an inclined portion 41 so as to smoothly drain the liquid. In addition, although the uneven | corrugated | grooved part 40 as a liquid holding | maintenance part hold | maintained with surface tension was introduced in the present Example for convenience, if it is a mechanism which can hold | maintain with surface tension, it will not be limited to this.
Further, the support mechanism 35 is configured to be movable up and down by a support mechanism moving mechanism, for example, an air cylinder 50, as shown in FIG.

  Further, inside the support mechanism 35, as shown in FIG. 2, a rinsing liquid such as pure water is formed on the back surface of the semiconductor wafer W toward the periphery of the semiconductor wafer W or with respect to the concavo-convex portion 40 of the ring member 37. A plurality of back surface nozzles 51 are provided as a rinsing liquid back surface supply mechanism.

  Further, a cup 60 as a first enclosure provided so as to surround the semiconductor wafer W held by the chuck 32 is provided around the chuck 32, and the above-described air supply mechanism is provided at a lower position in the cup 60. A gas / liquid recovery port 70 is provided for recovering at least a part of the air from 30 and recovering the developer or rinse liquid, and is recovered by a gas / liquid recovery mechanism 71 as an exhaust mechanism. The gas-liquid recovery mechanism 71 is configured to freely set the amount of air recovery to a predetermined amount. That is, the area (second peripheral area β) to be exhausted from the cup 60 can be set to a predetermined amount. The cup 60 is configured to move up and down by a cup moving mechanism (not shown).

  Further, a wall portion 75 that forms a wall of a processing chamber as a second enclosure provided so as to surround the cup 60 is disposed around the cup 60, and a lower position between the cup 60 and the wall portion 75. The gas-liquid that collects at least a part of the air from the air supply mechanism 30 and collects the developer or the rinsing liquid via the rectifying mechanism 74 having a plurality of recovery ports 73 that rectifies the flow of the airflow. A recovery port 76 is provided for recovery processing by a gas-liquid recovery mechanism 77 as an exhaust mechanism. The gas-liquid recovery mechanism 77 is configured to freely set the amount of air recovery to a predetermined amount. That is, the area (first peripheral area α) that exhausts from between the cup 60 and the wall 75 is configured to be set to a predetermined amount.

  Further, as shown in FIG. 2, the wall portion 75 is provided with a loading / unloading port 80 through which the arm 17 of the substrate transfer mechanism 10 that transfers the semiconductor wafer W enters and retracts into the processing chamber. A lid 81 is provided as an opening / closing mechanism for shutting off and opening the processing chamber and shutting off the atmosphere and the arrangement space of the substrate transfer mechanism 10 in which the downflow DF is formed. The relationship between the pressure in the processing chamber and the pressure in the arrangement space of the substrate transport mechanism 10 is set higher for the pressure in the processing chamber. This is to prevent particles and the like from entering the processing chamber from the arrangement space of the substrate transport mechanism 10. Therefore, based on the detection data of the sensor 82 provided in the arrangement space of the substrate transport mechanism 10, the control mechanism 31 causes the air supply amount from the air supply mechanism 30 and / or the air recovery amount of the gas-liquid recovery mechanism 77 or / In addition, the air recovery amount of the gas-liquid recovery mechanism 71 is controlled. When the arm 17 of the substrate transport mechanism 10 enters the processing chamber, the lid 81 is opened, and the pressure in the processing chamber is reduced. Although the pressure change is detected by the sensor 82, even if the pressure in the processing chamber temporarily decreases, if the reduced pressure is higher than the pressure in the process unit unit PU, the control mechanism 31 may Pressure fluctuation factors, for example, at least one factor among the air supply amount from the air supply mechanism 30, the air recovery amount from the gas-liquid recovery mechanism 77, and the air recovery amount from the gas-liquid recovery mechanism 71 Substantially does not need to be changed compared to a set value during processing of the semiconductor wafer W. Further, when the lid 81 is opened and the pressure in the processing chamber becomes substantially equal to the pressure in the process unit unit PU, or when it is desired to maintain a difference by a predetermined pressure, the air from the air supply mechanism 30 is opened before the lid 81 is opened. The amount of air recovered is not changed, and at least one of the factors of the amount of air recovered from the gas-liquid recovery mechanism 77 and the amount of air recovered from the gas-liquid recovery mechanism 71 is changed. It is preferable to respond by lowering or stopping. This is because, if the pressure fluctuation factor is changed, it takes time to reach a value set during the processing of the semiconductor wafer W, and the processing throughput is lowered.

  Further, in the processing chamber, as shown in FIGS. 2 and 4A and 4B, a developing nozzle 90 and a semiconductor wafer W as a developing solution supply mechanism for supplying a developing solution as a processing solution to the semiconductor wafer W are provided. In addition, a rinsing nozzle 91 is provided as a rinsing liquid supply mechanism for supplying a rinsing liquid as a processing liquid, for example, pure water or / and an aqueous solution in which a surfactant is added to pure water.

  Further, the developing nozzle 90 is provided with a discharge port 94 for discharging the developing solution to a region 93 having a predetermined distance larger than the size 92 of the inner diameter of the cup 60 so that the developing solution can be simultaneously supplied to the cup 60 and the semiconductor wafer W. . Further, the developing nozzle 90 is configured to be movable in the X5 direction in the drawing by a moving mechanism (not shown). The developing discharge starts at least from the X51 on the cup 60, and the discharge end position is at least the end side X53 of the semiconductor wafer W. (Preferably X54 position on the cup 60), and the developer can be freely deposited on the semiconductor wafer W.

  With respect to the positional relationship between the cup 60 and the chuck 32 in this liquid accumulation, as shown in FIGS. 4B and 4C, the developer 95 discharged from the cup 60 by the developing nozzle 90 is moved horizontally in the X5 direction. However, the relationship between the height of the cup 60 and the height position of the processing surface of the semiconductor wafer W held by the chuck 32 or supported by the support mechanism 35 is such that the processing surface of the semiconductor wafer W is the height of the cup 60. The cup 60 and / or the chuck 32 or the distance X10 between the cup 60 and the semiconductor wafer W held by the chuck 32 or supported by the support mechanism 35 is set to a height V10 that is substantially the same height as the position or higher. It is configured to be set by relative movement of the support mechanism 35. These distances, that is, the distances V10 and X10 between the semiconductor wafer W and the cup 60, the developer is held between the semiconductor wafer W and the cup 60 by the surface tension of the developer discharged from the developing nozzle 90 and does not remain. It is preferable to set as follows. Further, if the distances V10 and X10 between the semiconductor wafer W and the cup 60 are too large, it is not preferable because it becomes the same as that in which the developer is supplied directly only to the semiconductor wafer W. That is, while the developing nozzle 90 is moving in the X5 direction, the developer discharged from the developing nozzle 90 is temporarily held by the surface tension between the semiconductor wafer W and the cup 60, but as the developing nozzle 90 moves. Development distance between the semiconductor wafer W and the cup 60 due to the surface tension cannot be maintained (that is, development is temporarily performed between the semiconductor wafer W and the cup 60 when the developer from the developing nozzle 90 is supplied). Although the liquid is held at the surface tension, the developer is attracted to each other by the surface tensions of the semiconductor wafer W and the cup 60 at the portion where the developer is not supplied as the developing nozzle 90 moves. It is preferable to set the distance between the cups 60 so that the developer cannot be held. (These distances are set as appropriate depending on the type of the developing solution.) Thereby, an amount of the developing solution unnecessary for the developing process is recovered by sliding down the inclined portion 60a of the cup 60 or falling into the cup 60, and the semiconductor wafer W. An appropriate amount of developer is deposited on top. Further, as another embodiment, as shown in FIG. 4D, the development on the semiconductor wafer W is a distance V100 where the height of the cup 60 is substantially equal to or greater than the height of the processing surface of the semiconductor wafer W. It is set higher than the height of the liquid 600. It is also possible to generate the effects described above by setting in this way. Needless to say, the chuck 32 may be used. Further, as described above, since the height of the cup 60 is set higher than the height of the processing surface of the semiconductor wafer W at a distance V100 that is substantially equal to or greater than that, the influence of the air flow in the exhaust from outside the cup 60 is affected by the semiconductor wafer W. Since it is possible to further suppress the action on the developer on the processing surface, the processing yield can be improved.

  Further, as shown in FIGS. 2 and 4A, an arm 98 as an arm moving mechanism is configured to be movable in the rotation direction θ5 about the shaft portion 97 as a fulcrum. The section is provided with a rinsing nozzle 91 for supplying a rinsing liquid, for example, pure water or pure water containing a predetermined amount of a surfactant, as a processing liquid to the semiconductor wafer W, and the rinsing liquid from the rinsing nozzle 91 is moved by the movement of the arm 98. Is configured to be freely supplied in the vicinity of the center of the processing surface of the semiconductor wafer W.

Next, the configuration of the coating processing unit COT will be described with reference to FIG.
The coating processing unit COT is provided with an air supply mechanism 100 for supplying air having a controlled temperature and humidity set to predetermined values in the processing chamber at the top, and is detected by a sensor 101 provided in the processing chamber. The control mechanism 31 is configured to maintain a predetermined temperature and humidity based on the data.

  A chuck 102 as a holding mechanism that holds the back surface of the semiconductor wafer W by vacuum suction is disposed below the processing chamber. The chuck 102 is configured to be rotatable by a rotation drive mechanism, for example, a motor 103. Yes. In this embodiment, the chuck 102 is configured not to move vertically. Since the motor 103 must also move up and down to move the chuck 102 up and down, the range of the influence of the heat of the motor 103 on the apparatus is widened, and the yield is reduced due to the influence of heat on the semiconductor wafer W. There is a fear that it will end up. Moreover, in order to suppress the thermal influence, the heat suppression mechanism at the lower part of the processing chamber is systematically increased. For example, to stack a plurality of such processing chambers, it is necessary to make the vertical size of the processing chambers as thin as possible. However, it goes without saying that the system may be configured to move together with the motor 103 as long as such a system is not required.

  A support mechanism 104 that supports the back surface of the semiconductor wafer W is provided below the chuck 102. The support mechanism 104 includes a plurality of support pins 105 that support the back surface of the semiconductor wafer W by point contact, and is configured to be movable by a moving mechanism, for example, an air cylinder 106, that moves the pins integrally. Yes.

  Inside the support mechanism 104, a plurality of back surface nozzles 107 are provided as a solvent liquid back surface supply mechanism for supplying a solvent liquid, for example, thinner toward the periphery of the semiconductor wafer W toward the back surface of the semiconductor wafer W. .

  Further, a cup 110 as a first enclosure provided so as to surround the semiconductor wafer W held by the chuck 102 is provided around the chuck 102, and the above-described air supply mechanism 100 is provided at a lower position in the cup. A gas / liquid recovery port 111 for recovering at least a part of the air from the air and recovering the coating liquid or the rinsing liquid is provided and recovered by the gas / liquid recovery mechanism 112 as an exhaust mechanism. The gas-liquid recovery mechanism 112 is configured to freely set the amount of air recovered to a predetermined amount. That is, the area (second peripheral area β) to be exhausted from the cup 110 can be set to a predetermined amount. The cup 110 is configured to be movable up and down by a cup moving mechanism (not shown).

  Further, a wall portion 113 that forms a wall of the processing chamber as a second enclosure provided so as to surround the cup 110 is disposed around the cup 110, and a lower position between the cup 110 and the wall portion 113. Is provided with a gas recovery port 116 for recovering at least a part of the air from the air supply mechanism 100 through a rectifying mechanism 115 having a plurality of recovery ports 114 for rectifying the flow of the airflow. The gas is recovered by the gas recovery mechanism 117. The gas recovery mechanism 117 is configured to freely set the amount of air recovered to a predetermined amount. That is, the area (first peripheral area α) exhausted from between the cup 100 and the wall 113 is configured to be set to a predetermined amount.

  Further, the wall 113 is provided with a loading / unloading port 120 through which the arm 17 of the substrate transfer mechanism 10 for transferring the semiconductor wafer W enters / retreats into the processing chamber. A lid 121 is provided as an opening / closing mechanism for blocking the arrangement space and atmosphere of the substrate transport mechanism 10 in which the flow DF is formed. The relationship between the pressure in the processing chamber and the pressure in the arrangement space of the substrate transport mechanism 10 is set higher for the pressure in the processing chamber. This is to prevent particles and the like from entering the processing chamber from the arrangement space of the substrate transport mechanism 10. Therefore, based on the detection data of the sensor 82 provided in the arrangement space of the substrate transport mechanism 10, the control mechanism 31 allows the air supply amount from the air supply mechanism 100 and / or the air recovery amount of the gas recovery mechanism 117 or / and The air recovery amount of the gas-liquid recovery mechanism 112 is controlled. When the arm 17 of the substrate transport mechanism 10 enters the processing chamber, the lid 121 is opened, and the pressure in the processing chamber is reduced. This change in pressure is detected by the sensor 101. Even if the pressure in the processing chamber temporarily decreases, if the reduced pressure is higher than the pressure in the process unit unit PU, the control mechanism 31 causes the processing chamber 31 to For example, at least one of the factors of the pressure fluctuation, for example, the air supply amount from the air supply mechanism 100, the air recovery amount from the gas recovery mechanism 117, and the air recovery amount from the gas-liquid recovery mechanism 112 is There is substantially no need to change the set value during processing of the semiconductor wafer W. Further, when the lid 121 is opened and the pressure in the processing chamber becomes substantially equal to the pressure in the process unit unit PU, or when it is desired to maintain a difference by a predetermined pressure, the air from the air supply mechanism 100 is opened before the lid 121 is opened. The amount of air recovered is not changed, and at least one of the factors of the amount of air recovered from the gas recovery mechanism 117 and the amount of air recovered from the gas-liquid recovery mechanism 112 is changed. It is preferable to respond by lowering or stopping. This is because, if the pressure fluctuation factor is changed, it takes time to reach a value set during the processing of the semiconductor wafer W, and the processing throughput is lowered.

  As shown in FIGS. 5 and 6, an arm 130 as an arm moving mechanism is configured to be movable in the rotational direction θ10 with the shaft portion 131 as a fulcrum in the processing chamber. A resist nozzle group 132 for supplying a plurality of types of coating liquids, for example, resist liquids, as processing liquids to the semiconductor wafer W is provided, and the resist liquid is supplied from a specific resist nozzle 134 selected in the resist nozzle group 132 by movement of the arm 130. The semiconductor wafer W is configured to be freely supplied in the vicinity of the center of the processing surface of the semiconductor wafer W. Further, the arm 130 is freely extendable (133 direction in the figure) in order to keep the supply of the specific resist nozzle 134 selected in the resist nozzle group 132 to the vicinity of the center of the processing surface of the semiconductor wafer W at a fixed position. It is configured.

  As shown in FIGS. 5 and 6, an arm 140 as an arm moving mechanism is configured to be movable in the rotational direction θ11 with the shaft portion 141 as a fulcrum in the processing chamber. A solvent nozzle 142 for supplying a solvent liquid, for example, a thinner liquid, as a processing liquid to the semiconductor wafer W is provided, and the solvent liquid can be supplied from the solvent nozzle 142 to the peripheral portion of the processing surface of the semiconductor wafer W by the movement of the arm 140. Has been. Of the resist film applied to the processing surface of the semiconductor wafer W by the solvent solution, the resist film at the peripheral edge of the semiconductor wafer W is peeled off.

Next, the processing operation of the resist processing apparatus 1 configured as described above will be described.
First, a cassette C storing a plurality of unprocessed semiconductor wafers W is placed on a cassette mounting unit U1 of a cassette unit unit CU by an operator or a cassette transport robot. Thereafter, the semiconductor wafers W are unloaded from the cassette C by the substrate loading / unloading mechanism 2 of the substrate loading / unloading mechanism unit U2, and the semiconductor wafer W is once aligned by the substrate loading / unloading mechanism 2, and then the semiconductor wafer W Is delivered to the substrate delivery unit 8 of the process unit unit PU.

  Thereafter, the semiconductor wafer W is transferred to the gas processing unit by the arm 17 of the substrate transfer mechanism 10 of the process unit unit PU and subjected to a hydrophobization process in the processing unit. For example, after the processing temperature is set in the coating processing unit COT, it is transported to the coating processing unit COT by the arm 17 of the substrate transport mechanism 10.

  As a delivery process of the semiconductor wafer W of the arm 17 of the substrate transport mechanism 10 in the coating processing unit COT, first, the arm 17 of the substrate transport mechanism 10 supporting the semiconductor wafer W is delivered to the semiconductor wafer W in the coating processing unit COT. Then, the support pins 105 are UP by the air cylinder 106 to support the semiconductor wafer W, and the semiconductor wafer W is separated from the arm 17 of the substrate transfer mechanism 10 and delivered. Thereafter, the arm 17 of the substrate transport mechanism 10 is retracted out of the coating processing unit COT, the loading / unloading port 120 is closed by the lid 121, and the processing chamber is airtight. The support pins 105 that support the semiconductor wafer W are DOWN by the air cylinder 106, and the semiconductor wafer W is transferred from the support pins 105 onto the chuck 102 and held on the chuck 102 by vacuum suction. At this time, a vacuum suction vacuum sensor (not shown) substantially confirms that the semiconductor wafer W has been delivered into the coating processing unit COT depending on whether or not a predetermined pressure is maintained. After this confirmation, a substantial coating process is performed.

  During the conveyance process during this time, the air recovery from the air supply mechanism 100 is recovered only from the gas recovery mechanism 117 and not recovered from the gas-liquid recovery mechanism 112, or the recovery amount from the gas recovery mechanism 117 is the gas-liquid recovery. It is assumed that the recovery amount from the mechanism 112 is set to be larger. As a result, the air from the air supply mechanism 100 is not drawn into the cup 110 but is collected from outside the cup 110 (first peripheral area α), so that adhesion of particles to the semiconductor wafer W in the cup 110 is reduced. This makes it possible to improve the processing yield for the semiconductor wafer W.

  Next, in the coating process, after the cup 110 is UP, the semiconductor wafer W held on the chuck 102 in the cup 110 in the cup 110 is rotated by the chuck 102, and the resist nozzle group 132 is moved by the movement of the arm 130. A resist solution is supplied to the vicinity of the center of the processing surface of the semiconductor wafer W by a specific resist nozzle 134 selected from among the above. Here, for convenience, after the semiconductor wafer W is rotated, the resist solution is supplied to the semiconductor wafer W. However, after the resist solution is supplied to the semiconductor wafer W, the cup 110 is raised to rotate or rotate the semiconductor wafer W. The semiconductor wafer W may be rotated after the cup 110 is UP and the resist solution is supplied to the semiconductor wafer W. In this way, a resist solution film is formed on the semiconductor wafer W.

  During the coating process, the air recovery from the air supply mechanism 100 is recovered from the gas recovery mechanism 117 and the gas-liquid recovery mechanism 112. At this time, the amount of exhaust from the gas-liquid recovery mechanism 112 is larger than that in the above-described transfer process. That is, since the resist solution on the semiconductor wafer W is scattered in the direction of the cup 110 by rotation, the scattered resist solution is exhausted downward (region to be exhausted from the cup 110 (second peripheral region β)). This is necessary. However, it is necessary to maintain a constant pressure in the processing chamber (in this way, unless the processing chamber is maintained at a constant pressure, pressure fluctuations have a significant effect on the uniformity of the resist film thickness. Therefore, it is necessary to reduce the exhaust amount exhausted from the outside of the cup 110 (the first peripheral region α) by the increase of the exhaust amount exhausted from the inside of the cup 110. Thus, the exhaust amount of the gas recovery mechanism 117 is controlled by the control mechanism 31.

  During the coating process, the cup 110 is UP by bringing it closer to the air outlet of the air supply mechanism 100 and restricting the air of the air supply mechanism 100 into the cup 110 so that the air outside the cup 110 is in the cup 110. It is restrained from getting into and entering. That is, the airflow in the processing chamber is changed in this way to set the necessary airflow before and during the processing. By setting in this way, unnecessary particles or the like from outside the cup are prevented from entering the cup 110 due to a change in the exhaust from the cup 110, and the processing yield of the semiconductor wafer W is improved. Will be able to.

  Next, in the step of peeling the resist film on the peripheral portion of the semiconductor wafer W out of the resist film applied to the processing surface of the semiconductor wafer W (edge remover step), the arm 140 moves in the direction of rotation θ11 and rotates. The solvent is supplied from the solvent nozzle 142 to the resist film at the peripheral edge of the semiconductor wafer W to be removed, and the unnecessary resist film is removed. In this step, thinner is also discharged from the back nozzle 107, and unnecessary resist adhering to the back surface of the semiconductor wafer W is removed. The operation of the state of the cup, the amount of air supplied from the air supply mechanism 100, the amount of exhaust from the gas recovery mechanism 117, and the amount of exhaust from the gas-liquid recovery mechanism 112 are set to the same values as in the above-described coating process. It is assumed that

  Thereafter, the state of the cup and the operations of the air / gas recovery mechanism 117 and the gas / liquid recovery mechanism 112 from the air supply mechanism 100 are set to the same state as the above-described transport process, and the support pins 105 are arranged in the reverse order of the transport process. Then, the semiconductor wafer W is delivered to the arm 17 of the substrate transport mechanism 10 and the processing in the coating processing unit COT is completed.

  Thereafter, the semiconductor wafer W is disposed at a position above the substrate delivery portions 8 and 9 and is heat-treated by a predetermined heat treatment portion selected, and then placed below the substrate delivery portions 8 and 9 by the arm 17 of the substrate transport mechanism 10. After being set to a predetermined temperature by a predetermined temperature adjustment processing unit that is arranged and selected, it is transferred to the interface unit unit IFU via the substrate transfer unit 9, and further transferred from the interface unit unit IFU to the exposure apparatus 3 to be a semiconductor. The wafer W is subjected to an exposure process.

  The semiconductor wafer W subjected to the exposure processing is delivered to the interface unit unit IFU and then returned to the process unit unit PU via the substrate delivery unit 9. Further, after this, the semiconductor wafer W is subjected to heat treatment in a predetermined heat treatment portion selected above the substrate delivery portions 8 and 9 (especially in the case of a resist film using exposure at a wavelength of 157 nm, the treatment chamber of the heat treatment portion). The humidity is 45% or less, preferably 10% or less, more preferably 5% or less, and is supplied with clean air or nitrogen that is not 0%, and the humidity is maintained and set to a predetermined pressure and heat treated. After the temperature is set by the arm 17 of the substrate transport mechanism 10 to a predetermined temperature control unit selected at a position below the substrate delivery units 8 and 9, the development process is performed. It is conveyed to the part DEV.

  As a delivery process of the semiconductor wafer W by the arm 17 of the substrate transport mechanism 10 in the development processing unit DEV, first, the arm 17 of the substrate transport mechanism 10 that supports the semiconductor wafer W is delivered to the semiconductor wafer W in the development processing unit DEV. Then, the support pin 36 of the support mechanism 35 is UP by the air cylinder 50 to support the semiconductor wafer W, and the semiconductor wafer W is separated from the arm 17 of the substrate transfer mechanism 10 and delivered. Thereafter, the arm 17 of the substrate transport mechanism 10 is retracted out of the development processing unit DEV, the loading / unloading port 80 is closed by the lid 81, and the processing chamber is airtight. The support pins 36 that support the semiconductor wafer W are DOWN by the air cylinder 50, and the semiconductor wafer W is transferred from the support pins 36 onto the chuck 32 and held on the chuck 32 by vacuum suction. At this time, a vacuum suction vacuum sensor (not shown) substantially confirms that the semiconductor wafer W has been delivered into the development processing unit DEV depending on whether or not a predetermined pressure is maintained. Subsequent to this confirmation, the substantial development processing step proceeds. As described above, if it is not confirmed by the above-described vacuum sensor that the semiconductor wafer W is substantially delivered into the development processing unit DEV, the semiconductor wafer W is not delivered and the next process is performed. In such a case, the semiconductor wafer W may be damaged or the processing may not be performed properly.

  During the conveyance process during this period, air is recovered from the air supply mechanism 30 only from the gas-liquid recovery mechanism 77 and not recovered from the gas-liquid recovery mechanism 71, or the recovery amount from the gas-liquid recovery mechanism 77 is greater. It is assumed that the recovery amount from the liquid recovery mechanism 71 is set larger than the recovery amount. As a result, the air from the air supply mechanism 30 is not drawn into the cup 60 but is collected from outside the cup 60 (first peripheral region α), so that the adhesion of particles to the semiconductor wafer W in the cup 60 is reduced. This makes it possible to improve the processing yield for the semiconductor wafer W. (Conveying process)

  In the process of supporting the semiconductor wafer W on the support pins 36 and depositing the developer after the transporting process, the support pins 36 are UP by the air cylinder 50 from the chuck 32 holding the semiconductor wafer W, and the chuck The semiconductor wafer W is transferred from 32 to the support pins 36 again, and the support pins 36 and the support pins 36 are set so as to set the positional relationship between the cup 60 and the semiconductor wafer W on the support pins 36 as shown in FIG. The cup 60 is moved relatively to move to a substantial development processing step.

  Next, in the developing process, the developing nozzle 90 is horizontally moved in the X5 direction while discharging the developing solution 95 from the cup 60 by the developing nozzle 90, and the developing solution is supplied to the cup 60 and the semiconductor wafer W at the same time. A predetermined amount of developer is deposited on the wafer W, and the development process proceeds. After this liquid accumulation, the cup 60 is raised in order to reduce the influence of air from the air supply mechanism 30. (That is, the head of the cup 60 is higher than the processing surface of the semiconductor wafer W, preferably higher than the liquid level of the developer accumulated on the semiconductor wafer W, and / or from the position where the developer is deposited on the semiconductor wafer W. In other words, the semiconductor wafer W is accommodated in the cup 60. Thus, the air from the air supply mechanism 30 is not drawn into the cup 60 by changing the air flow in the processing chamber, and the semiconductor wafer. A flow of airflow outside the cup 60 is generated in a region above the W and collected from the outside of the cup 60 (first peripheral region α), so that the development accumulated on the semiconductor wafer W in the cup 60 is performed. It is possible to reduce the influence of the airflow on the liquid and the adhesion of particles contained in the airflow, and the processing yield for the semiconductor wafer W can be improved. Note that, during this process, the operations of the gas-liquid recovery mechanism 77 and the gas-liquid recovery mechanism 71 in the recovery of air from the air supply mechanism 30 maintain the same operations as in the transport process. (Development 1 step)

  In the case of the step of supporting the semiconductor wafer W on the chuck 32 and depositing the developer after the transporting step, the semiconductor wafer W on the cup 60 and the support pins 36 as shown in FIG. The support pin 36 and the cup 60 are relatively moved so as to set the positional relationship, and the process proceeds to a substantial development processing step.

  In this development processing step, the developing nozzle 90 is horizontally moved in the X5 direction while discharging the developing solution 95 from the cup 60 by the developing nozzle 90, and the developing solution is simultaneously supplied to the cup 60 and the semiconductor wafer W. A predetermined amount of developer is deposited on the top. Thereafter, the support pin 36 is UP by the air cylinder 50 from the chuck 32 holding the semiconductor wafer W, and the semiconductor wafer W is again transferred from the chuck 32 onto the support pin 36, and the development processing of the semiconductor wafer W is continued. Let

  In the above process, the cup 60 is raised in order to reduce the influence of air from the air supply mechanism 30. (That is, the head of the cup 60 is higher than the processing surface of the semiconductor wafer W, preferably higher than the liquid level of the developer accumulated on the semiconductor wafer W, and / or from the position where the developer is deposited on the semiconductor wafer W. In other words, the semiconductor wafer W is accommodated in the cup 60. Thus, the air from the air supply mechanism 30 is not drawn into the cup 60 by changing the air flow in the processing chamber, and the semiconductor wafer. A flow of airflow outside the cup 60 is generated in a region above the W and collected from the outside of the cup 60 (first peripheral region α), so that the development accumulated on the semiconductor wafer W in the cup 60 is performed. It is possible to reduce the influence of the airflow on the liquid and the adhesion of particles contained in the airflow, and the processing yield for the semiconductor wafer W can be improved. Note that during this process, the operations of the gas-liquid recovery mechanism 77 and the gas-liquid recovery mechanism 71 in the recovery of air from the air supply mechanism 30 are the same as those in the transporting process. (2 development steps)

  Similarly, in the case of the first development step and the second development step, thereafter, the support pins 3 that support the semiconductor wafer W are DOWN by the air cylinder 50, and the semiconductor wafer W is delivered from the support pins 36 onto the chuck 32. And held on the chuck 32 by vacuum suction.

  Note that the case of the first development step is selected because the semiconductor wafer W is supported by point contact particularly in comparison with the second development step. Therefore, the yield of the semiconductor wafers W can be improved. Further, when supplying the processing liquid to the semiconductor wafer W, the processing liquid wraps around the back surface of the semiconductor wafer W and prevents the semiconductor wafer W from entering the center of the back surface. Can keep. Further, the case of the two development steps is selected, particularly in comparison with the first development step, because the semiconductor wafer W is in surface contact when the treatment liquid is supplied, so that the flow rate of the treatment liquid to the semiconductor wafer W and the treatment liquid nozzle It is possible to further suppress the lateral displacement of the semiconductor wafer W due to the surface tension between the semiconductor wafer W and the semiconductor wafer W due to the surface tension. Further, when it is desired to supply the processing liquid by rotating the semiconductor wafer W, for example, when the processing liquid supply area of the processing liquid nozzle is less than the distance of the diameter of the semiconductor wafer W, the liquid can be effectively deposited on the semiconductor wafer W. .

  Thereafter, the chuck 32 is rotated at a rotation speed such that the developer on the semiconductor wafer W does not spill, and the rinse nozzle 91 has a surface activity from the rinse nozzle 91 to pure water and / or pure water so that the developer on the semiconductor wafer W does not spill. The aqueous solution to which the agent is added is supplied, and the concentration of the developer on the semiconductor wafer W is diluted to a predetermined value. (Developer dilution step) The reason for diluting the developer in this way is that, in the latter stage of the development processing step, partial dissolution in the developer on the semiconductor wafer due to the effect of the dissolved product dissolved in the developer. It is possible to reduce the unevenness of the product and suppress the occurrence of partial critical dimension fluctuations.

  Thereafter, pure water is supplied from the rinse nozzle 91, the semiconductor wafer W is rotated at a high speed by the chuck 32, the developer is replaced from the semiconductor wafer W, and the wafer is dried by shaking. (Rinse Drying Step) During this step, air is recovered from the air supply mechanism 30 from the gas / liquid recovery mechanism 77 and the gas / liquid recovery mechanism 71. At this time, the amount of exhaust from the gas-liquid recovery mechanism 71 is larger than that during the above-described transfer process. That is, since the developer on the semiconductor wafer W is scattered in the direction of the cup 60 by rotation, it is necessary to exhaust the scattered developer to be drawn downward (region to be exhausted from the cup 60 (second peripheral region β)). However, because the processing chamber needs to be maintained at a constant pressure (in this way, unless the processing chamber is maintained at a constant pressure, fluctuations in pressure are caused by development processing). Therefore, it is necessary to reduce the exhaust amount exhausted from the outside of the cup 60 (first peripheral region α) by the amount of the exhaust amount exhausted from the cup 60. Thus, the exhaust amount of the gas-liquid recovery mechanism 77 is controlled by the control mechanism 31.

  Thereafter, the operation of the state of the cup, the amount of air supplied from the air supply mechanism 30, the amount of exhaust from the gas-liquid recovery mechanism 77, and the amount of exhaust from the gas-liquid recovery mechanism 71 is set to the same state as in the above-described transport process. Then, the semiconductor wafer W is delivered from the support pins 36 to the arm 17 of the substrate transport mechanism 10 in the reverse order to the transport process, and the processing in the development processing unit DEV is completed.

  Thereafter, the semiconductor wafer W is heat-treated at a selected predetermined heat-treating portion disposed above the substrate delivery portions 8 and 9, and then positioned below the substrate delivery portions 8 and 9 by the arm 17 of the substrate transport mechanism 10. Is set to a predetermined temperature by a selected predetermined temperature adjustment processing unit arranged in the cassette C, and then the cassette C is moved by the substrate loading / unloading mechanism 2 of the substrate loading / unloading mechanism unit U2 of the cassette unit unit CU via the substrate transfer unit 8. Then, the semiconductor wafer W is carried in and a series of processing is completed.

  Next, another embodiment of the development processing method of this embodiment will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  In the development processing method described above, after the developer is deposited on the semiconductor wafer W, the cup is moved up and down to change the airflow in the processing chamber, and then the concentration of the developer is changed at a later stage of the development processing step. However, in general, a semiconductor factory uses one type of developer such as a development density of 2.38%. However, depending on the device, with the miniaturization of the resist pattern, an unexpected situation has occurred in which the development speed is too high at that concentration. Therefore, a method for diluting the development density accumulated on the semiconductor wafer W in the previous stage of the development processing will be described below.

  When such a need arises, in the case of the above-described one development step, after a predetermined amount of developer is deposited on the semiconductor wafer W, the state is maintained and development on the semiconductor wafer W on the semiconductor wafer W is performed. Pure water or an aqueous solution in which a surfactant is added to pure water is supplied from the rinse nozzle 91 in such an amount that the liquid does not spill, and the concentration of the developer on the semiconductor wafer W is diluted to a predetermined value.

  In the second development step, the developer is simultaneously supplied to the cup 60 and the semiconductor wafer W, and after the developer is deposited on the semiconductor wafer W to a predetermined amount, the state is maintained and the development on the semiconductor wafer W is continued. The chuck 32 is rotated at a rotational speed such that the liquid does not spill, and pure water or an aqueous solution in which a surfactant is added to pure water is supplied from the rinse nozzle 91 in such an amount that the developer on the semiconductor wafer W does not spill. Then, the concentration of the developer on the semiconductor wafer W is diluted to a predetermined value.

  Thereafter, the support pin 36 is UP by the air cylinder 50 from the chuck 32 holding the semiconductor wafer W, and the semiconductor wafer W is again transferred from the chuck 32 onto the support pin 36, and the development processing of the semiconductor wafer W is continued. Let Therefore, after diluting the developing solution, the cup 60 is moved to change the airflow in the processing chamber.

  Even in the case of such development 1 step and development 2 step, the above-mentioned (developer dilution step) may be further added. As another process that does not perform the developer dilution process as described above, for example, the semiconductor wafer W is transferred from the support pins 36 onto the chuck 32 and held on the chuck 32 by vacuum suction. The developer on the semiconductor wafer W is spun off at a first rotation speed, or a predetermined amount of the developer remains, that is, before the developer is completely dried, the rinsing liquid is removed from the first rotation speed. A rinse drying step of supplying the processed surface of the semiconductor wafer W rotating at a low second rotational speed, and then rotating the semiconductor wafer W at a third rotational speed higher than or substantially the same as the first rotational speed. Needless to say, the processing can be appropriately performed according to the resist film formed on the semiconductor wafer W.

  Next, another embodiment of the support mechanism 35 of the present embodiment will be described with reference to FIG. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIGS. 7A and 7B, the support mechanism 35 supports the back surface of the semiconductor wafer W by partial line contact. For example, the support mechanism 35 is arranged at equal intervals on the concentric circumference of the semiconductor wafer W. As a liquid intrusion prevention mechanism for preventing a processing liquid such as a developing solution or a rinsing liquid from entering the central portion of the back surface of the semiconductor wafer W provided outside the plurality of supporting members 200 and the supporting member 200 A plurality of support pillars 38 that support the ring member 37 as a unit are provided. The ring member 37 and the support member 200 of the support mechanism 35 have the inclined portion 41 so that the height position thereof decreases toward the center of the semiconductor wafer W (from the ring member 37 toward the support member 200). Is provided. With this configuration, the contact portion where the rinsing liquid or developer adhering to the concavo-convex portion 40 or the rinsing liquid discharged from the back nozzle 51 and cleaning the ring member 37 etc. contacts at least the semiconductor wafer W of the support mechanism 35. It is comprised so that it may suppress that rinse solution or a developing solution adheres to 201. FIG. With this configuration, it is possible to suppress the rinsing liquid or the developer from adhering to the semiconductor wafer W being processed or the next semiconductor wafer W, thereby causing a partial temperature change of the semiconductor wafer W, or It is possible to suppress the generation of particles in the system by rinsing or developing solution adhering to the semiconductor wafer W, thereby improving the yield of the semiconductor wafer W.

  Further, as shown in FIG. 7B, the height and position of the support member 200 and the ring member 37 are set to a predetermined distance, for example, a distance between 0.5 mm to 5 mm (in the drawing). L) is set to be high. This is because the ring member 37 is prevented from directly contacting the back surface of the semiconductor wafer W. Further, the contact portion 201 that contacts the back surface of the semiconductor wafer W of the support member 200 is a member having a higher coefficient of friction and lower thermal conductivity than the member 39 that forms the support member 200, and the back surface of the semiconductor wafer W. For example, an elastic member is used as a displacement preventing member for preventing lateral displacement when the processing liquid is supplied to the semiconductor wafer W after supporting the back surface of the semiconductor wafer W and preventing the lateral displacement when the semiconductor wafer W is supported. ing. The reason why the thermal conductivity is low is that in-plane uniformity may be alienated due to the influence of heat escaping from the contact portion between the semiconductor wafer W and the support member 200 during the processing of the semiconductor wafer W. As the material of the contact portion 201 described above, for example, a hard resin such as PEEK / PBI, a ceramic material such as alumina / zirconia, or a rubber material such as perflo is considered.

  In the present embodiment, since the support member 200 is configured to support the back surface of the semiconductor wafer W by a plurality of partial line contacts, the horizontal state of the semiconductor wafer W can be supported more than the point contact, so that the ring Since the distance between the member 37 and the back surface of the semiconductor wafer W can be made closer, it is possible to prevent the processing liquid from entering the center of the back surface of the semiconductor wafer W.

  Further, since the friction for supporting the back surface of the semiconductor wafer W is increased as compared with the point contact, the lateral displacement of the semiconductor wafer W can be prevented. However, if the line contact of the support member 200 is too large, for example, in a ring shape, ring-shaped unevenness may occur on the processing surface of the semiconductor wafer W in the processing of the semiconductor wafer W. Therefore, it is necessary to set the line contact so that processing unevenness does not occur on the processing surface of the semiconductor wafer W. However, as described above, the support member 200 is described as having a ring shape that is not preferable. However, when the ring member may have a specification that may be a ring shape, the ring shape is not necessarily denied.

  Next, an embodiment of the support mechanism 35 and the back nozzle 51 of the present embodiment will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  As a process of discharging pure water from the back nozzle 51, after the developing process, after the developing solution or developer diluting process held using the surface tension on the concavo-convex portion 40 of the ring member 37, It is used to wash away and remove the developer or / and pure water held on the concavo-convex portion 40 using surface tension, or to wash away the developer attached to the back surface of the semiconductor wafer W. Before being supplied to W, that is, before the development processing step, pure water is discharged from the back surface nozzle 51 to the uneven portion 40 of the ring member 37, and surface tension is utilized between the ring member 37 and the back surface of the semiconductor wafer W. Once the pure water film is formed, the concentration of the developer between the ring member 37 and the back surface of the semiconductor wafer W is lowered after the development processing step, so that cleaning becomes easy. It is possible to improve the reduction, etc., such as the shortening mist purification time.

  Next, another embodiment of the relationship between the gas-liquid recovery mechanisms 71, 77, 112, the gas recovery mechanism 117, and the cups 60, 110 of this embodiment will be described with reference to FIGS. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. For convenience, the development processing unit DEV will be described with reference.

  As shown in FIG. 8A, the cup 60 is connected to a cup moving mechanism that moves the cup 60 up and down, for example, an air cylinder 209, and can move up and down. A wall 210 is disposed between the gas-liquid recovery mechanism 77 (gas recovery mechanism 117 in the case of COT) for draining, and an air cylinder 209 holds a cup 60 on the wall 210 as shown in FIG. A flow port 211 is provided for forming a gas flow 212 that causes the atmosphere in the cup 60 to flow through the gas-liquid recovery mechanism 77 (in the COT, the gas recovery mechanism 117) in conjunction with the movement of the gas. The gas fluctuation mechanism is configured.

  By comprising in this way, the mechanism of the gas-liquid collection | recovery mechanism 71 can be deleted. Further, in the COT, a liquid recovery function can be added to the gas recovery mechanism 117 and the gas-liquid recovery mechanism 112 can be deleted, and there is an advantage that the system can be downsized. Furthermore, since the processing chamber can be controlled by one exhaust mechanism, it is easy to control the pressure maintenance in the processing chamber in relation to the air from the air supply mechanisms 30 and 100, and the processing of the semiconductor wafer W in the processing chamber can be easily performed. The influence can be reduced and the processing yield can be improved.

  The gas fluctuation mechanism is not limited to the above embodiment as long as it causes fluctuations in the airflow in conjunction with the movement of the cup. For example, the gas fluctuation mechanism is evacuated from the cup in conjunction with or based on the movement of the cup. Needless to say, the present invention is not limited to the embodiment as long as it may be physical or electrical. In addition, with this configuration, when it is desired to make the exhaust amount from the first peripheral region, the exhaust amount from the first peripheral region, and the exhaust amount from the second peripheral region substantially the same, Even if the cup 60 moves up and down, the entire amount of exhaust gas is always constant, so that the control becomes easy and the system can be downsized. Furthermore, when the exhaust area of the first peripheral area and the exhaust area of the second peripheral area are different, for example, when the exhaust area of the first peripheral area> the exhaust area of the second peripheral area has such a different relationship Since the exhaust system is one and mechanically interlocked with the vertical movement of the cup 60, the control is further facilitated and the stability of the pressure in the processing chamber can be improved. Thus, the substrate processing yield can be improved. Also, the exhaust time from the first peripheral area and the exhaust time from the second peripheral area are different, for example, the exhaust time from the first peripheral area> the exhaust time from the second peripheral area is different. When there is a relationship, since there is one exhaust system and mechanically interlocked with the vertical movement of the cup 60, the control is further facilitated, and the stability of the pressure in the processing chamber can be improved. Thus, the substrate processing yield can be improved.

  Next, another embodiment of the cup 60 of the development processing unit DEV of this embodiment will be described with reference to FIG. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  The cup 220 includes a rectangular portion 221 formed in a rectangular shape, and a cylindrical cylindrical portion 223 provided inside the rectangular portion 221 and having a head 225 protruding therefrom. (Shape obtained by attaching the square portion 221 to the cup 60) The square portion 221 has a collection port for collecting the processing liquid such as the developer discharged from the developing nozzle 90 or the pure water discharged from the rinse nozzle 91. The processing liquid recovered from the recovery port 222 is recovered by the liquid recovery mechanism 226. In addition, the area (first area) surrounded by the rectangular part 221 is set larger than the area (second area) surrounded by the cylindrical part 223.

  As described above, since the cup 220 is configured, the developer discharged from the developing nozzle 90 or the pure water discharged from the rinse nozzle 91 can be recovered at the square portion 221, so that the gas-liquid recovery mechanism 77 recovers only the gas. The system can be miniaturized by reducing the mechanism accordingly. Further, since the adhesion of the developer or pure water or the like can be suppressed to the wall portion 75 forming the (first peripheral area α), the processing chamber can be made cleaner, so that the generation of mist and particles can be suppressed. . Further, the developer adhering to the square portion 221 may be washed with pure water discharged from the rinse nozzle 91.

  Such processing in the cup 220 can be processed in the same manner as the processing procedure described above. That is, the processing surface of the semiconductor wafer W is set to a height equal to or higher than that of the head 225 (at this time, in the first region as the region surrounded by the square portion 221), and the developing nozzle 90 is moved horizontally. Then, the developing solution is simultaneously supplied to the processing surface of the semiconductor wafer W and the head 225 of the cup 220, and the developing solution is accumulated on the processing surface of the semiconductor wafer W. The positional relationship between the head 225 and the semiconductor wafer W is set in the same manner as the positional relationship of the cup 60. If the shape of the head 225 is defined in the same manner as the head shape of the cup 60, An effect similar to the effect occurs. Further, even if the height of the head 225 is set to be higher than the height of the processing surface of the semiconductor wafer W, the above-described effect can be generated. In this way, in the exhaust from the outside of the head 225. Since the influence of the airflow can be further suppressed from acting on the developing solution accumulated on the processing surface of the semiconductor wafer W, the processing yield can be improved.

  Thereafter, as described above, the cup 220 is raised and the semiconductor wafer W is disposed in the region (second region) surrounded by the cylindrical body portion 223, and the development process is performed. As described above, the cup 220 has a structure in which the tubular portion 223 is further provided with the angular portion 221, so that the exhaust from the (first peripheral region α) is distant from the tubular portion 223. Since the air is exhausted, the semiconductor wafer W in the cylindrical portion 223 is less affected by the airflow in the processing chamber. As a result, the yield of the semiconductor wafer W is improved. In the present embodiment, the first region of the cup 220 is a rectangular body, but may be a cylindrical shape, and is not limited to this shape, and the area (second region) surrounded by the cylindrical portion 223 is the same. Needless to say, it may be configured to be set smaller than the area (first region) of the region surrounded by the rectangular portion 221.

  Next, another embodiment of the development processing unit DEV of this embodiment will be described with reference to FIGS. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  In the present embodiment, a wall 250 as an enclosure is provided on the upper part of the rectifying mechanism 74, and a region (first peripheral region α) exhausted from between the cup 60 and the wall portion 75 is divided. It is configured to That is, the region (first peripheral region α1) between the cup 60 and the wall 250, the space between the wall 250 and the wall portion 75 with respect to the region (second peripheral region β) to be exhausted from the cup 60. It is configured to be set to a region (first peripheral region α2). The wall 250 is set higher than the head of the cup 60 at a predetermined interval (W2 in the figure). This prevents the developer from the developing nozzle 90 or pure water from the rinse nozzle 91 from directly adhering to the processing chamber wall 75. Therefore, the wall 250 functions as a second cup as a liquid scattering prevention mechanism.

  As described above, since the developer from the developing nozzle 90 or the pure water from the rinse nozzle 91 can be prevented from directly adhering to the processing chamber wall 75, the wall 250 can be removed for maintenance such as cleaning the processing chamber. In this way, since only the wall 250 can be cleaned or replaced, the maintenance time can be shortened. Furthermore, since it is possible to prevent the developer from the developing nozzle 90 or pure water from the rinse nozzle 91 from adhering to the lid 81, the developer or the like adhering to the lid 81 is dried and scattered when the lid 81 is opened and closed. It is possible to prevent the particles from adhering to the semiconductor wafer W as particles in the processing chamber. The wall 250 is set higher than the head of the cup 60 by a predetermined distance (W2 in the figure). However, if the wall 250 is separated from the cup 60 to some extent, that is, from the developer from the developing nozzle 90 or the rinse nozzle 91. If it can suppress that the pure water etc. adhere to the process chamber wall 75 directly, it will not be limited to this.

  The above-described support mechanism 35 has been described with the support member 200 and the ring member 37 as an integral unit. However, the present invention is not limited to this. For example, the positional relationship between the support member 200 and the ring member 37 is as described above, Needless to say, the support member 200 and the ring member 37 may be appropriately operated by a vertical movement mechanism that moves the support member 200 and the ring member 37 up and down independently. It goes without saying that other methods may be used as long as the effect of 37 can be achieved.

  Next, another embodiment of the support mechanism 35 of the present embodiment will be described with reference to FIG. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIGS. 12A and 12B, the support mechanism 35 is provided outside the support member 200 and a plurality of support members 200 that support the back surface of the semiconductor wafer W by partial line contact. A ring member 37 as a liquid intrusion prevention mechanism for preventing a processing liquid such as a developer or a rinsing liquid from entering the center of the back surface of the semiconductor wafer W and a plurality of supports that integrally support the ring member 37. A pillar 38 is provided.

  The concavo-convex portion 40 of the ring member 37 is provided with a liquid supply port 420 for supplying a rinsing liquid. The liquid supply port 420 is configured to be freely supplied with a rinsing liquid from a rinsing liquid supply source 415 via a pipe 413. Yes. Further, the ring member 37 is provided with a plurality of cleaning nozzles 411 for supplying, for example, spraying a rinse liquid, for example, a cleaning liquid, from at least the ring member 37 and the inclined portion 41 from the rinse liquid supply source 415. Further, the central portion 410 of the inclined portion 41 is formed in a mountain shape, and a groove 412 for promoting liquid drainage is provided on the surface thereof, like the side wall of the ring member 37.

  By configuring the support mechanism 35 in this way, the effect of the liquid supply port 420 for supplying the rinsing liquid is more reliable than the water film formed between the back surface of the semiconductor wafer W and the supply from the back surface nozzle 51. Will be able to. In this case, the back surface nozzle 51 may be used together, or the liquid film may be formed only with the rinsing liquid from the liquid supply port 420. Furthermore, the uneven portion 40 and the ring member 37 can be more reliably cleaned after the development processing. Furthermore, by rinsing the rinsing liquid from the liquid supply port 420 and the cleaning nozzle 411, and further draining the liquid efficiently through the groove 412, the ring member 37 can be cleaned more reliably and quickly. The mist adhering to the member 37 can be prevented from being generated as particles when the ring member 37 is dried, and the yield of the semiconductor wafer W can be improved. It is preferable that the rinsing liquid from the cleaning nozzle 411 and / or the back surface nozzle 51 does not adhere to the contact portion 201 that contacts the back surface of the semiconductor wafer W. This is because it is possible to suppress the rinsing liquid or developer from adhering to the semiconductor wafer W being processed or the next semiconductor wafer W, thereby causing a partial temperature change of the semiconductor wafer W, or the rinsing liquid adhering to the semiconductor wafer W or This is because it is possible to suppress the drying of the developer and the generation of particles in the system, thereby improving the yield of the semiconductor wafers W.

  Next, another embodiment of the support mechanism 35 of the present embodiment will be described with reference to FIG. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIG. 13, the support mechanism 35 is supplied with rinse liquid from a plurality of cleaning nozzles 411 provided on the ring member 37 by the rinse liquid supply source 415 described above. In addition, the support mechanism 35 is provided with a plurality of gas nozzles 417 (one place in the figure for convenience) for ejecting gas such as clean air or nitrogen from the gas supply mechanism 416.

  By configuring the support mechanism 35 in this way, the drying process after cleaning from the cleaning nozzle 411 after the development processing can be performed more reliably and quickly, and the processing throughput can be improved.

  Next, another embodiment of the support mechanism 35 of the present embodiment will be described with reference to FIG. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIG. 14, the support mechanism 35 is supplied with rinse liquid from a plurality of cleaning nozzles 411 provided on the ring member 37 via the valve VA <b> 1 from the rinse liquid supply source 415 described above, and the cleaning nozzle 411. In the configuration, gas such as clean air or nitrogen can be ejected from the gas supply mechanism 416 via the valve VA2.

  As described above, the cleaning nozzle 411 is configured so that the cleaning liquid and the gas can be selectively discharged by switching the valves VA1 and VA2, so that the gas is discharged after the cleaning liquid is discharged from the cleaning nozzle 411. For example, the cleaning liquid adhering to the cleaning nozzle 411 itself can be blown off, and the drying process after cleaning can be performed more reliably and quickly, and the processing throughput can be improved. Further, since there is no need to provide the cleaning nozzle and the gas nozzle separately, the system of the ring member 37 can be simplified and the size can be reduced.

  Next, a storage for storing a processing solution, for example, a resist solution or a developing solution used in the coating processing unit COT and / or the development processing unit DEV as a liquid processing device in the resist processing apparatus 1 of the present embodiment based on FIG. The embodiment about the arrangement place of a container is described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIG. 15, the storage container 499 is disposed below the interface unit IFU. As this arrangement position, the vertical distance from the exposure unit 3 disposed below the substrate carry-in / out port 19 of the substrate delivery units 8 and 9 to the vertical direction V100 and the delivery unit 4 or delivery unit 5 for delivering the substrate. It is set below V101. The reason for setting this arrangement position is to suppress the influence of deterioration or the like of the processing liquid, for example, the resist liquid or the developer as much as possible. That is, the reason why it is placed below the substrate loading / unloading port 19 is to prevent the heat from the heat treatment part or the like in the process unit PU from being transmitted through the substrate loading / unloading port 19, and the exposure apparatus 3 and the substrate. The reason why the heat sensor is disposed below the transfer unit 4 or the receiving unit 5 is to prevent the heat from the exposure apparatus 3 from being transmitted through the transfer unit 4 or the receiving unit 5 by any chance. This is because heat transfer from the substrate loading / unloading port 19 or the transfer section 4 or the receiving section 5 affects the upper side rather than the lower side of the wall on which they are provided, so that heat from the wall can also be suppressed. Further, the interface unit unit IFU is configured such that the downflow DF whose temperature is adjusted directly acts on at least the substrate loading / unloading port 19 or the transfer unit 4 or the receiving unit 5. It is comprised so that the heat transfer from the part 5 may be eased.

  As described above, in order to further suppress heat from the wall partitioning the interface unit unit IFU and the process unit unit PU, processing units in the process unit unit PU, for example, a plurality of development processing units DEV (a plurality of coating processing units COT). ) Are collectively collected in each block on the cassette unit CU side, and exhaust paths 501 and 502 for each block are formed. As a matter of course, although not shown in the figure, the heat treatment section in the process unit PU is configured such that an exhaust path is formed on the cassette unit CU side for each heat treatment section of the same type in relation to each block or treatment temperature. Has been.

  In addition, the processing unit in the process unit unit PU, for example, a plurality of processing units, such as a resist solution or a developing solution that is actually used in the coating processing unit COT and / or the development processing unit DEV, is disposed as a storage container. It is conceivable to arrange them at lower positions 504 and 505 of the development processing unit DEV (multiple coating processing units COT). In this case, it is not preferable to dispose the storage container in contact with the region immediately below the exhaust passages 501 and 502 for each block and the wall on which the exhaust passages 501 and 502 are provided. It is preferable that the blocks are arranged at a distance of H100 and H101 in the horizontal direction (distance that does not cause a thermal effect) immediately below the exhaust paths 501 and 502 for each block.

  Furthermore, it is not preferable to arrange the control device that controls the entire apparatus as the heat source of the liquid processing apparatus 1 in the interface unit IFU and the process unit PU, and in the cassette unit CU. preferable. Further, as the arrangement position, in order to suppress the heat transfer to each processing unit of the process unit unit PU or the heat transfer to the interface unit unit IFU via the process unit unit PU, the substrate transfer ports of the substrate transfer units 8 and 9 It is set above the distance V102 in the vertical direction from the top of 19.

  As described above, by taking into consideration the influence of heat in the apparatus, it is possible to suppress deterioration of the processing liquid and the like, and to suppress the influence of heat on the substrate, thereby improving the yield of the substrate.

  Further, the semiconductor wafer has been described as the above-described substrate. However, the present invention is not limited to this. For example, a glass substrate such as an LCD substrate or a substrate such as a disk such as a CD may be used. As a matter of course, the present invention is not limited to development / coating, and may be used in a cleaning device or the like, and needless to say, it is not limited to this as long as it is a method or apparatus using a processing solution.

  The present invention is applicable to a developing device and a liquid processing apparatus in a semiconductor manufacturing apparatus.

It is a top view which shows the whole structure in embodiment of the coating / developing apparatus which concerns on this invention. It is a schematic sectional drawing which shows one Embodiment of a development process part (DEV). (A) is a schematic perspective view explaining the support mechanism of the principal part of the development processing part (DEV) of FIG. FIG. 3B is a schematic cross-sectional view illustrating a support mechanism for a main part of the development processing unit (DEV) in FIG. (A) is a schematic plan view which shows description of the image development processing part (DEV) of FIG. (B) is a schematic sectional drawing explaining the principal part of a development processing part (DEV). (C) is a schematic sectional drawing explaining the principal part of a development processing part (DEV). (D) is a schematic sectional drawing explaining the principal part of a development processing part (DEV). It is a schematic sectional drawing which shows one Embodiment of a coating process part (COT). FIG. 6 is a schematic plan view illustrating a coating processing unit (COT) in FIG. 5. (A) is a schematic perspective view explaining the support mechanism of other embodiment of a development processing part (DEV). (B) is a schematic sectional drawing explaining the support mechanism of other embodiment of a development processing part (DEV). (A) is a schematic sectional drawing which shows the principal part of other embodiment of a development processing part (DEV). (B) is a schematic sectional drawing which shows the principal part of other embodiment of a image development processing part (DEV). It is a schematic perspective view which shows embodiment of the other cup of a image development processing part (DEV). It is a schematic sectional drawing which shows other embodiment of a development process part (DEV). FIG. 11 is a schematic plan view illustrating a development processing unit (DEV) in FIG. 10. (A) It is a schematic perspective view explaining the support mechanism of other embodiment of a development processing part (DEV). (B) It is a schematic sectional drawing explaining the support mechanism of other embodiment of a development processing part (DEV). It is a schematic sectional drawing explaining the support mechanism of other embodiment of a development processing part (DEV). It is a schematic sectional drawing explaining the support mechanism of other embodiment of a development processing part (DEV). It is a perspective view explaining the arrangement | positioning place of the storage container which stores the process liquid in a liquid processing apparatus.

Explanation of symbols

1; resist processing apparatus W; semiconductor wafer (substrate)
CU; cassette unit IFU; interface unit COT; coating processing unit DEV; development processing unit PU; process unit 30, 100; air supply mechanism 31; control mechanism 35, 104; mechanism)
32, 102; chuck (holding mechanism)
α; first peripheral area β; second peripheral area 60, 110; cup (first enclosure)
75, 113; wall (second enclosure)

Claims (26)

  A substrate processing method having a plurality of development processing chambers for developing exposed resist on a substrate to be processed, and processing the substrate to be processed in each development processing chamber, wherein the substrate to be processed is held in a stationary state. A step of supplying a developer to the processing substrate and depositing the solution, a step of developing the exposed resist on the substrate to be processed while the substrate to be processed is stationary, and a rinsing liquid being supplied to the substrate to be processed Without moving the substrate to be processed in a downward direction, and supplying the rinse liquid to the substrate to be processed while the substrate to be processed is rotated. Processing of the substrate to be processed in each of the development processing chambers A substrate processing method comprising: a step, wherein these steps are performed in each of the development processing chambers in a state where the plurality of the development processing chambers are exhausted simultaneously or / and collectively.   A substrate processing method for processing a substrate to be processed in each development processing chamber having a plurality of development processing chambers for developing an exposed resist on the substrate to be processed, and developing the substrate to be processed held by a support mechanism A step of supplying liquid and depositing, a step of moving an enclosure surrounding the substrate to be processed upward, a step of transferring the substrate to be processed from the support mechanism to the holding mechanism, and a substrate to be processed by the support mechanism. Supplying the rinse liquid to the substrate to be processed while the substrate is being rotated or / and rotating the substrate to be processed by the holding mechanism, and the step of rotating the substrate to be processed and drying the substrate to be processed The processing steps for the substrate to be processed in each of the development processing chambers are provided, and these steps are performed in each of the development processing chambers while being exhausted simultaneously or / and collectively in the plurality of development processing chambers. Group characterized by Processing method.   A substrate processing method for processing a substrate to be processed in each development processing chamber having a plurality of development processing chambers for developing an exposed resist on the substrate to be processed, and developing the substrate to be processed held by a support mechanism Supplying the liquid and depositing the liquid; moving the enclosure surrounding the substrate to be processed upward; and transferring the substrate to be processed from the support mechanism to the holding mechanism without supplying the rinse liquid to the substrate to be processed. A step of supplying a rinse liquid to the substrate to be processed while the substrate to be processed is rotated by the holding mechanism, a step of rotating the substrate to be processed and drying the substrate to be processed, and rinsing the substrate to be processed The step of transferring the substrate to be processed from the holding mechanism to the support mechanism without supplying the liquid, and the step of moving the enclosure surrounding the substrate to be processed downward are performed on the substrate to be processed in each development processing chamber. It has a processing step and this Step the substrate processing method, characterized in that, each of which is carried out in the development processing chamber in a state that is exhausted simultaneously or / and collectively the plurality of developing chamber.   4. The substrate processing method according to claim 1, wherein the rinsing liquid is pure water.   5. The development process of the exposed resist on the substrate to be processed is substantially advanced in a state where the substrate to be processed is held by the support member. 6. Substrate processing method.   6. The substrate processing method according to claim 3, wherein exhaust is performed only inside the enclosure, only around the enclosure, or inside the enclosure and around the enclosure.   4. The exhaust from the inside of the enclosure and the periphery of the enclosure when the enclosure moves upward, and the exhaust from the inside of the enclosure only when the enclosure moves downward. 6. The substrate processing method according to any one of items 5.   The substrate processing method according to claim 3, wherein the processing liquid is drained substantially simultaneously from the inside of the enclosure and the periphery of the enclosure.   9. The exhaust amount of the exhaust gas according to claim 6, wherein the exhaust amount is substantially constant only in the enclosure or in the exhaust from the inside of the enclosure and the surroundings of the enclosure. A substrate processing method according to claim 1.   10. The substrate processing method according to claim 1, wherein the developer supplied to the substrate to be processed is also supplied to an enclosure surrounding the periphery of the substrate to be processed.   11. The substrate processing method according to claim 3, wherein a second circular or square second enclosure surrounding the enclosure is disposed around the enclosure. 11. .   A cassette unit having a cassette for mounting a substrate to be processed, an interface unit for loading / unloading a substrate to / from another apparatus, and a plurality of processing units stacked between the cassette unit and the interface unit A substrate processing method for processing a substrate to be processed in a substrate processing apparatus having the processing unit, wherein the plurality of processing units are collectively exhausted on the cassette unit side of the process unit, A storage container for storing the processing liquid used in the process unit is disposed below the interface unit and / or below the process unit, and the process unit includes a plurality of development processing units stacked. A second process unit and a plurality of resist coating processing sections And Rosesuyunitto, in the configuration, the substrate processing method, which comprises carrying out the respective process units are collectively referred to an exhaust of said plurality of processing units.   A cassette unit having a cassette for mounting a substrate to be processed, an interface unit for loading / unloading a substrate to / from another apparatus, and a plurality of processing units stacked between the cassette unit and the interface unit A substrate processing method for processing a substrate to be processed in a substrate processing apparatus having the processing unit, wherein the plurality of processing units are collectively exhausted on the cassette unit side of the process unit, A storage container for storing the processing liquid used in the process unit is disposed below the interface unit and / or below the process unit, and the process unit includes a plurality of development processing units stacked. A second process unit and a plurality of resist coating processing sections And Rosesuyunitto, in the configuration, the substrate processing method, which comprises carrying out in the cassette unit side of the respective process units together collectively exhaust of said plurality of processing units.   14. The substrate processing according to claim 12, wherein the exhaust of the plurality of processing units in each process unit is collectively performed after once flowing in the parallel arrangement direction of the process units. Method.   The exhaust of the plurality of processing units in each process unit is performed collectively after being once flowed to a unit side provided in parallel with the process unit. Substrate processing method.   A method for manufacturing a substrate, wherein the substrate is manufactured using the substrate processing method according to claim 1.   A substrate processing apparatus comprising a control mechanism for executing the substrate processing method according to claim 1.   A substrate processing apparatus comprising a plurality of development processing units for developing an exposed resist on a substrate to be processed, the support mechanism configured to be able to transfer the substrate to be processed to and from a transport mechanism outside the processing chamber, and the support mechanism And a holding mechanism configured to allow the substrate to be transferred and the substrate to be processed to rotate, and a developer supply for supplying the developer to the substrate to be processed held by the support mechanism A mechanism, a rinse liquid supply mechanism that supplies a rinse liquid to the substrate to be processed held by the support mechanism and / or the substrate to be processed held by the holding mechanism, and the plurality of development processing units And / or an exhaust mechanism configured to be evacuated in a lump.   A substrate processing apparatus comprising a plurality of development processing units for developing an exposed resist on a substrate to be processed, the support mechanism configured to be able to transfer the substrate to be processed to and from a transport mechanism outside the processing chamber, and the support mechanism And a holding mechanism configured to receive the substrate to be processed and to rotate the substrate to be processed, and to surround the support mechanism or the substrate to be processed held by the holding mechanism. An enclosure, a developer supply mechanism for supplying a developer to the substrate to be processed held by the support mechanism, and the enclosure before supplying the developer from the developer supply mechanism to the substrate to be processed; A moving mechanism for raising the body, a rinsing liquid supply mechanism for supplying a rinsing liquid to the substrate to be processed held by the support mechanism and / or the substrate to be processed held by the holding mechanism, Substrate processing apparatus is characterized in that comprising an exhaust freely configured exhaust mechanism co and / or bulk multiple developing unit.   A substrate processing apparatus comprising a plurality of development processing units for developing an exposed resist on a substrate to be processed, the support mechanism configured to be able to transfer the substrate to be processed to and from a transport mechanism outside the processing chamber, and the support mechanism And a holding mechanism configured to receive the substrate to be processed and to rotate the substrate to be processed, and to surround the support mechanism or the substrate to be processed held by the holding mechanism. An enclosure, a developer supply mechanism for supplying developer to the substrate to be processed held by the support mechanism, and a substrate to be processed held by the support mechanism and / or the holding mechanism. A rinsing liquid supply mechanism for supplying a rinsing liquid to the substrate to be processed; and the enclosure is raised before the developer is supplied from the developer supply mechanism to the substrate to be processed. A moving mechanism configured to lower the enclosure after supplying a rinsing liquid from a liquid supply mechanism to a substrate to be processed held by the holding mechanism and / or the plurality of development processing units simultaneously and / or A substrate processing apparatus comprising: an exhaust mechanism configured to be evacuated collectively.   20. When the enclosure is raised, exhaust is performed only from the inside of the enclosure, and when the enclosure is lowered, exhaust is performed from the inside of the enclosure and the periphery of the enclosure. The substrate processing apparatus according to claim 20.   The processing liquid is drained from the inside of the enclosure and the surroundings of the enclosure substantially simultaneously or / and exhausted simultaneously or separately from the inside of the enclosure and the surroundings of the enclosure. Item 21. The substrate processing apparatus according to Item 20.   The developer from the developer supply mechanism is also supplied to the enclosure when the developer is supplied from the developer supply mechanism to the substrate to be processed held by the support mechanism. Item 23. The substrate processing apparatus according to any one of items 19 to 22.   The substrate processing apparatus according to any one of claims 19 to 23, wherein a second enclosure surrounding the enclosure is disposed around the enclosure.   25. A substrate processing method, wherein a substrate is sequentially processed using the substrate processing apparatus according to claim 18.   A method for manufacturing a substrate, comprising manufacturing a substrate using the substrate processing method according to claim 25.

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