JP2002164410A - Apparatus for processing substrate and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for processing a substrate and a method for processing the substrate where the influence of the time needed for cooling process of the substrate can be reduced to the throughput drop as much as possible. SOLUTION: Each heat treatment unit to ten steps G3-G5 and each coating unit of five steps G1 and G2 are arranged at the periphery of a first main wafer transfer A1 and a second main wafer transfer A2, and in the heat treatment unit G3-G5, by transferring the wafer W while controlling the temperature of the wafer W with an apparatus C for controlling temperature and transferring, the influence of the time needed for cooling process of the substrate can be reduced to the throughput drop as much as possible.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus such as a coating and developing apparatus for applying and developing a resist solution on a semiconductor wafer, for example, and a substrate processing method applied to such an apparatus.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of semiconductor devices, for example, a substrate such as a semiconductor wafer (hereinafter, referred to as a "wafer") is subjected to a pattern exposure, a heating process, and a temperature control process. Next, development processing is performed. For such a series of processes, a coating and developing apparatus has been conventionally used.

The coating and developing apparatus includes a series of processes necessary for coating and developing a wafer, for example, a resist coating process for applying a resist solution, a heating process for heating the exposed wafer, and a heating process after the heating process. There are provided various processing apparatuses for individually performing a temperature control process for controlling the temperature of the wafer and a developing process for performing a developing process on the wafer after the temperature control process. The loading and unloading of wafers to and from each processing apparatus and the transfer of wafers between processing apparatuses are performed by a main transfer apparatus.

[0004] By the way, only the transfer to each unit by the main transfer device increases the load on the main transfer device, and may lower the throughput of the entire device.

For example, Japanese Patent Application Laid-Open No. 8-162514 discloses a processing unit group composed of predetermined processing units among processing units for performing a continuous process. The sub-transfer robot transports the substrate between the substrate transfer position and the processing unit forming the processing unit group, while processing units other than the processing unit forming the processing unit group, and the substrate of the processing unit group A technique in which a main transfer robot transfers a substrate to and from a transfer position is disclosed. As a result, the load on the transfer device can be reduced, and the throughput can be improved.

For example, between the exposure process and the development process, a temperature control process is performed after the heat process. However, the time required for the temperature control process is prolonged and the throughput tends to be reduced. According to the disclosed technology, the time from the end of the heating process to the start of the developing process for transferring the substrate between the processing unit that performs the heating process and the processing unit that performs the temperature adjustment process by the sub-transport robot whose load is reduced is And the effect of the time required for the temperature control process on the decrease in throughput can be reduced.

[0007]

However, according to the technique disclosed in the above-mentioned publication, the actual time required for the temperature control processing is not different from the conventional one, so that the time required for the temperature control processing gives a decrease in throughput. There are limits to reducing the impact.

In the technology disclosed in the above publication,
Since the substrate is carried into the processing unit that performs the heating process and the processing unit that performs the temperature control process via the sub-transport robot, the thermal history of the substrate before the heat process and before the temperature control process varies. However, there is a problem that processing at a precise temperature cannot be performed. In particular, recently, there has been a tendency to quickly respond to temperature changes by thinning the heating plate or temperature control plate. Turbulence makes it difficult to process substrates at precise temperatures.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has as its object to provide a substrate processing apparatus and a substrate processing method capable of substantially reducing the time required for temperature control processing of a substrate. I have.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of more precisely performing thermal processing and temperature control processing of a substrate.

[0011]

In order to achieve the above object, a substrate processing apparatus according to the present invention comprises a main transport section for transporting a substrate, a processing section for performing thermal processing on the substrate, and a substrate processing apparatus. A temperature adjusting / transporting unit for adjusting the temperature to a predetermined value and transporting the substrate between the main transporting unit and the processing unit;

[0012] The substrate processing apparatus according to the present invention includes an opening for surrounding the processing section and the temperature control / transport section, and for transferring a substrate between the main transport section and the temperature control / transport section. Further, a housing having:

[0013] The substrate processing apparatus of the present invention comprises a main transport section for transporting the substrate, a first processing section for performing thermal processing on the substrate, and a second processing section for performing thermal processing on the substrate. A processing unit, and a temperature control / transport unit for adjusting the substrate to a predetermined temperature, and transporting the substrate between the main transport unit, the first processing unit, and the second processing unit. The first processing section, the second processing section, and the temperature control / conveyance section are linearly arranged.

A substrate processing apparatus according to the present invention surrounds the first processing section, the second processing section, and the temperature control / transport section, and interposes between the main transfer section and the temperature control / transport section. A substrate processing apparatus, further comprising a housing having an opening for transferring a substrate.

[0015] The substrate processing apparatus of the present invention includes a temperature control section for adjusting the substrate to a predetermined temperature, a processing section for performing thermal processing on the substrate, and transfer of the substrate between at least the temperature control section. And a sub-transport section for transporting the substrate between the temperature control section and the processing section.

A substrate processing apparatus according to the present invention is characterized in that a casing surrounding the temperature control section and the sub-transport section and having an opening for transferring a substrate between the main transfer section and the temperature control section. It further comprises a body.

[0017] The substrate processing apparatus of the present invention comprises a temperature control section for adjusting the substrate to a predetermined temperature, a first processing section for performing thermal processing on the substrate, and a first processing section for performing thermal processing on the substrate. And a main transfer unit for transferring a substrate between at least the temperature control unit, the temperature control unit, the first processing unit, and the second processing unit. And a sub-transport section for transporting the substrate to and from the processing section.

The substrate processing apparatus according to the present invention surrounds the first processing section, the second processing section, the temperature control section and the sub-transport section, and forms the main transfer section with the temperature control section. The electronic device further includes a housing having an opening for transferring the substrate between them.

The substrate processing apparatus of the present invention includes a main transport section for transporting a substrate, a processing section for performing thermal processing on the substrate, a substrate adjusted to a predetermined temperature, and Temperature control and transfer unit for transferring substrates between
And a plurality of elevating pins for transferring the substrate to and from the main transport unit in a raised state and transferring the substrate to and from the temperature control and transport unit in a lowered state.

The substrate processing apparatus according to the present invention may include an opening for surrounding the processing section, the temperature control / transport section, and the elevating pins, and for transferring a substrate between the main transport section and the elevating pins. Further, a housing having:

The substrate processing apparatus according to the present invention comprises a main transport section for transporting a substrate, a first processing section for performing thermal processing on the substrate, and a second processing section for performing thermal processing on the substrate. A processing unit, a temperature control and transfer unit for adjusting the substrate to a predetermined temperature, and transferring the substrate between the first processing unit and the second processing unit; A plurality of elevating pins for transferring the substrate to and from the main transfer unit in a state, and transferring the substrate to and from the temperature control and transfer unit in a lowered state, wherein the first processing unit and the The second processing section, the temperature control / transport section, and the elevating pins are linearly arranged.

The substrate processing apparatus according to the present invention, in the substrate processing apparatus according to the eleventh aspect, surrounds the first processing section, the second processing section, the temperature control / transport section, and the elevating pins. And a housing having an opening for transferring a substrate between the main transport unit and the elevating pins.

The substrate processing apparatus of the present invention further comprises a shutter mechanism for opening and closing the opening.

[0024] The substrate processing apparatus of the present invention further includes a liquid supply unit for supplying a predetermined liquid to the substrate, and the main transport unit transfers the substrate to and from the liquid supply unit.

In the substrate processing apparatus according to the present invention, the housings are arranged in multiple stages in a vertical direction.

In the substrate processing apparatus according to the present invention, the liquid supply units are vertically arranged in multiple stages.

[0027] In the substrate processing apparatus of the present invention, the main transport section includes an arm for holding the substrate, an advance / retreat drive mechanism for driving the arm forward and backward, and a rotation drive mechanism for rotating the arm. And a vertical transport mechanism that integrally drives the arm, the forward / backward drive mechanism, and the rotary drive mechanism in the vertical direction.

[0028] The substrate processing apparatus of the present invention is provided with a processing unit having openings on both sides for transferring a substrate, and disposed so as to face each opening of the processing unit. A first and a second main transport section for carrying the substrate in and out of the unit, wherein the processing unit adjusts the temperature of the substrate to a predetermined temperature; And a temperature control / transport section for transporting the substrate between the first and second main transport sections via the openings and further with the processing section.

[0029] The substrate processing apparatus of the present invention is provided with a processing unit having openings on both sides for transferring a substrate, and disposed so as to face each opening of the processing unit, and through the opening, the processing unit. A first processing unit for performing thermal processing on the substrate, the first processing unit including first and second main transport units that carry in and out the substrate with respect to the unit;
A second processing unit for performing a thermal process on the substrate; a first processing unit configured to adjust the substrate to a predetermined temperature; and the first and second main transfer units via the opening. A temperature control and transfer unit for transferring a substrate between the processing unit and the second processing unit, wherein the first processing unit, the second processing unit, and the temperature control and transfer unit Are arranged linearly.

[0030] The substrate processing apparatus of the present invention is provided with a processing unit having openings on both sides for transferring a substrate, and disposed so as to face each opening of the processing unit. A first and a second main transport unit for loading and unloading a substrate from and to a unit, wherein the processing unit is connected to the first and second main transport devices via the opening. While transferring the substrate, a temperature control unit for adjusting the substrate to a predetermined temperature, a processing unit for performing a thermal process on the substrate, and for transferring the substrate between the temperature control unit and the processing unit And a sub-transport unit.

The substrate processing apparatus of the present invention has a processing unit having openings on both sides for transferring a substrate, and is disposed so as to face each of the openings of the processing unit, and the processing unit has the opening through the openings. A first and a second main transport unit for loading and unloading the substrate from and to the unit, wherein the processing unit is connected to the first and the second main transport unit via the opening. A temperature control unit for transferring the substrate and adjusting the substrate to a predetermined temperature; a first processing unit for performing thermal processing on the substrate; and a second processing unit for performing thermal processing on the substrate And a sub-transport unit for transporting a substrate between the temperature control unit, the first processing unit, and the second processing unit,
The temperature control section, the first processing section, and the second processing section are linearly arranged.

[0032] The substrate processing apparatus of the present invention is provided with a processing unit having openings on both sides for transferring a substrate, and disposed so as to face each opening of the processing unit. A first and a second main transport section for carrying the substrate in and out of the unit, wherein the processing unit adjusts the temperature of the substrate to a predetermined temperature; And a temperature control / transport unit for transporting the substrate to and from the processing unit, and the first and second main transport units via the opening, which can be moved up and down and are raised. And a plurality of elevating pins for transferring the substrate to and from the temperature control / transportation unit in a lowered state.

[0033] The substrate processing apparatus of the present invention is provided with a processing unit having openings on both sides for transferring a substrate, and disposed so as to face each opening of the processing unit. A first processing unit for performing thermal processing on the substrate, the first processing unit including first and second main transport units that carry in and out the substrate with respect to the unit;
A second processing unit for performing thermal processing on the substrate, and a temperature for adjusting the substrate to a predetermined temperature and transporting the substrate between the first processing unit and the second processing unit. Adjustment / transportation section,
It can be moved up and down, transfers the substrate between the first and second main transfer sections through the opening in the raised state, and transfers the substrate between the temperature control and transfer section in the lowered state. And a plurality of elevating pins for transferring the first and second processing units, and the first processing unit, the second processing unit, the temperature control / transportation unit, and the elevating pins are linearly arranged.

[0034] In the substrate processing apparatus of the present invention, the processing units are arranged in multiple stages in the vertical direction.

The substrate processing apparatus according to the present invention is provided at a position where the substrate can be transferred to and from the first or second transfer section, and includes a liquid supply section for supplying a predetermined liquid to the substrate. Have more.

[0036] In the substrate processing apparatus of the present invention, in the substrate processing apparatus according to the twenty-fifth aspect, the liquid supply units are arranged in multiple stages in the vertical direction.

[0037] The substrate processing apparatus of the present invention further includes an inspection unit arranged at a position where the substrate can be transferred to and from the first or second main transfer unit, and inspecting the substrate.

[0038] In the substrate processing apparatus of the present invention, the inspection unit may include:
They are arranged in multiple stages in the vertical direction.

[0039] In the substrate processing apparatus of the present invention, the inspection unit may include:
A microscopic inspection is performed on the substrate.

In the substrate processing apparatus of the present invention, the processing unit is further disposed on a side of the first main transfer section opposite to a surface facing the processing unit.

In the substrate processing apparatus of the present invention, a receiving portion for temporarily receiving and holding substrates before and after processing is further disposed on a side of the processing unit opposite to a surface facing the first or second main transfer section. ing.

[0042] The substrate processing apparatus of the present invention further includes an inspection unit disposed on the receiving unit and inspecting the substrate.

[0043] In the substrate processing apparatus of the present invention, the inspection unit may include:
A substrate processing apparatus for performing a macro inspection on a substrate.

[0044] The substrate processing apparatus of the present invention includes: a main transfer unit for transferring a substrate; a processing unit disposed around the main transfer unit and performing at least thermal processing on the substrate;
A liquid supply unit that is disposed around the main transfer unit and supplies a predetermined liquid onto a substrate, and the liquid supply unit has a positive pressure than the processing unit and the main transfer unit, and the main transfer unit Means for controlling the processing unit and the processing unit to have substantially the same atmospheric pressure.

[0045] The substrate processing apparatus according to the present invention comprises:
The processing unit and the liquid supply unit are respectively disposed in separate casings, each of the casings has an opening for transferring a substrate, and a gap between adjacent ones of the casings is provided. Are surrounded by a surrounding member.

In the substrate processing apparatus of the present invention, a minute gap is provided between the surrounding member and at least one of the housings.

In the substrate processing apparatus of the present invention, the air pressure control means may include a gas supply unit for supplying gas to the main transport unit, the processing unit, and the liquid supply unit, and a gas exhaust unit for exhausting gas. Unit, and a pressure measurement unit that measures the pressure, and controls at least one of the amount of gas supplied by the gas supply unit and the amount of gas exhausted by the gas exhaust unit based on the measured pressure. I do.

In the substrate processing apparatus according to the present invention, the processing units are vertically arranged in multiple stages, and each processing unit includes the gas supply unit, the gas exhaust unit, and the air pressure measurement unit.

The substrate processing apparatus according to the present invention is characterized in that:
At least one of the housings of the processing unit and the liquid supply unit is provided with an openable door used for internal maintenance, and the air pressure control means, when the door is opened, the air pressure in the housing. Control to increase.

[0050] The substrate processing apparatus according to the present invention is characterized in that:
The processing unit and the liquid supply unit entirely surround the housing, and further includes an outer housing provided with an openable and closable panel used for internal maintenance, wherein the air pressure control unit is configured such that the panel is opened. Then, control is performed so as to increase the air pressure in the outer casing.

[0051] In the substrate processing apparatus of the present invention, a gas supply unit that operates only when the door or the panel is opened is further provided in the housing or the external housing.

The substrate processing apparatus according to the present invention includes a main transfer section for transferring a substrate, a liquid supply unit disposed around the main transfer section and supplying a predetermined liquid onto the substrate, And a unit temperature control means for separately controlling the temperature or humidity of the main transport unit, the liquid supply unit and the processing unit, and the processing unit includes the main unit. A temperature control unit that is disposed adjacent to the transfer unit and adjusts the substrate to a predetermined temperature, and is disposed so that the temperature control unit intervenes with respect to the main transfer unit, and performs thermal processing on the substrate. And a processing unit for performing the processing.

In the substrate processing apparatus of the present invention, the processing section is covered by a temperature control mechanism.

In the substrate processing apparatus of the present invention, a heat shield plate that can be opened and closed is disposed between the temperature control unit and the processing unit.

In the substrate processing apparatus according to the present invention, the processing units are arranged in multiple stages in the up-down direction, and the unit temperature control means controls temperature or humidity separately for each processing unit.

In the substrate processing apparatus of the present invention, the liquid supply units are arranged in multiple stages in the vertical direction, and the unit temperature control means controls the temperature or humidity separately for each of the liquid supply units.

The substrate processing apparatus of the present invention further comprises a liquid supply mechanism for supplying the liquid to the liquid supply unit, and the unit temperature control means controls the temperature of the liquid supply mechanism or controls the humidity. I do.

In the substrate processing apparatus according to the present invention, the liquid supply mechanism is disposed below the liquid supply unit.

In the substrate processing apparatus according to the present invention, the liquid supply unit can be substituted for a liquid supply mechanism for supplying the liquid to the liquid supply unit.

A substrate processing apparatus according to the present invention comprises a processing unit having a processing unit for performing thermal processing on a substrate and a processing unit having a temperature control unit for adjusting the substrate to a predetermined temperature, which are vertically arranged in multiple stages. A group, a first main transfer device of a vertical transfer type that is arranged on one side of the processing unit group and is accessible to each of the processing units, and a substrate that is arranged around the first main transfer device, The first to supply the predetermined liquid on
Liquid supply unit, and a second transportable unit which is disposed on the other side of the processing unit group, and which is of a vertical transport type which is accessible to each of the processing units and is movable in a predetermined plane direction.
And a plurality of second liquid supply units that are arranged along a plane moving direction of the second main transfer device and that supply a predetermined liquid onto the substrate.

In the substrate processing apparatus of the present invention, the first and second liquid supply units are arranged in multiple stages in the vertical direction.

A substrate processing apparatus according to the present invention includes a substrate transport apparatus for transporting a substrate, and processing units disposed on both sides and a front surface of the substrate transport apparatus. At least one of the processing units is vertically multistage. The substrate transfer device is a vertical transfer type that can transfer a substrate to each unit, and a support member that supports the substrate transfer device in the vertical direction is disposed on the front surface. Installed on the processing unit side.

The substrate processing apparatus of the present invention has a first processing unit having first and second openings for transferring a substrate on both sides, and faces each opening of the first processing unit. And a first and a second transfer device for loading and unloading a substrate to and from the first processing unit through the respective openings, and first and second transfer devices for opening and closing the respective openings.
And a means for controlling opening and closing of each of the shutter members so that the second opening is closed when the first opening is open.

In the substrate processing apparatus according to the present invention, the first processing unit includes a thermal processing section for performing thermal processing on the substrate, and a temperature control section for adjusting the substrate to a predetermined temperature. .

In the substrate processing apparatus of the present invention, the first and second transfer devices are surrounded by a surrounding member and are substantially shielded from the outside.

A substrate processing apparatus according to the present invention includes a transfer device for transferring a substrate, and a first and a second device for transferring a substrate between the transfer device and the transfer device. First and second processing units for opening a second opening, first and second shutter members for opening and closing the respective openings, and when the first opening is open,
Means for controlling the opening and closing of each of the shutter members so that the second opening is closed.

In the substrate processing apparatus of the present invention, the first processing unit is a unit for controlling or heating the temperature of the substrate, and the second processing unit is for supplying a predetermined liquid to the substrate. Unit.

In the substrate processing apparatus according to the present invention, the first and second transfer devices are surrounded by a surrounding member and are substantially shielded from the outside.

The substrate processing apparatus of the present invention includes a transfer device for transferring a substrate, and a first and a second device for transferring a substrate between the transfer device and the transfer device. First and second processing units for opening a second opening, first and second shutter members for opening and closing the respective openings, and when the first opening is open,
Means for controlling the opening and closing of each of the shutter members so that the second opening is closed.

The substrate processing apparatus of the present invention is arranged so as to be adjacent to a main transfer device for transferring a substrate and to the front side of the main transfer device, and transfers the substrate to and from the main transfer device. A first processing unit that supplies a predetermined liquid to the substrate, and a first processing unit that is disposed adjacent to one side surface of the main transfer device to transfer the substrate between the first transfer unit and the main transfer device; A second processing unit having a temperature control unit for adjusting the temperature to a predetermined temperature and a heating unit for performing a heat treatment on the substrate, wherein the temperature control unit of the second processing unit is adjacent to the main transfer device The heating unit is disposed adjacent to the temperature control unit and protrudes to the rear side of the main transfer device.

The substrate processing apparatus of the present invention is disposed between the processing section and the exposure apparatus, and a processing section for performing at least resist coating processing and development processing on the substrate. An interface unit for transferring the substrate between the first interface unit and the exposure apparatus, wherein the interface unit is disposed between the processing unit and the first interface unit and the exposure apparatus. A second interface unit, the first interface unit having a first transport unit for transferring a substrate between the processing unit and the second interface unit, Is characterized by having a second transfer unit for transferring a substrate between the first interface unit and the exposure apparatus.

In the substrate processing method of the present invention, the substrate is subjected to a thermal process in a processing section, and the substrate subjected to the thermal processing is adjusted to a predetermined temperature by a temperature controlling / transporting section. And delivering to a main transport section for transport.

The substrate processing method of the present invention includes a step of transferring a substrate from the main transport section to the temperature control / transport section, and a step of adjusting the temperature of the substrate to a predetermined temperature by the temperature control / transport section. Transporting the substrate to the substrate.

The substrate processing method of the present invention includes a step of transferring a substrate from a main transport section for transporting a substrate to a temperature control / transport section, and adjusting the temperature of the substrate to a predetermined temperature by the temperature control / transport section. Transporting the substrate to the processing unit, and subjecting the transported substrate to thermal processing in the processing unit.

According to the substrate processing method of the present invention, the substrate can be moved up and down, and the substrate is transferred to and from the main transfer section in a raised state, and the substrate is transferred to and from the temperature control and transfer section in a lowered state. And transferring the substrate between the main transport unit and the temperature control / transport unit via a plurality of lifting pins.

In the present invention, since the substrate is transferred from the processing section to the main transport section via the temperature control / transport section, the temperature of the substrate is adjusted to some extent at this stage. Therefore, after that, when the substrate is transferred from the main transport section to the temperature control section, the temperature control time in the temperature control section is reduced. Therefore, the time required for the temperature control processing of the substrate can be substantially reduced.

Further, according to the present invention, the substrate is subjected to the temperature control processing by the temperature control / transport unit until the substrate is transferred to the processing unit for performing the thermal processing via the temperature control / transport unit. Thus, the substrate at a constant temperature is always introduced into a processing unit for performing thermal processing. On the other hand, even before the substrate is transferred from the processing unit to the main transfer unit via the temperature control and transfer unit, the substrate is subjected to the temperature control process by the temperature control and transfer unit and is adjusted to a constant temperature. Thereafter, when the substrate is transferred from the main transport section to the temperature control section, a substrate having a constant temperature is always loaded into the temperature control section. Therefore, thermal processing and temperature control processing of the substrate can be performed more precisely.

According to the present invention, since the processing section and the temperature control / transport section are surrounded and the opening for transferring the substrate between the main transfer section and the temperature control / transport section is provided, The main transfer unit is no longer thermally affected by the processing unit, and the substrate is transferred at a desired temperature by the main transfer unit. Therefore, thermal processing and temperature control processing of the substrate can be performed more precisely. Further, the liquid supply process to the substrate can be performed at a desired temperature.

In the present invention, since the first processing section, the second processing section, and the temperature control / transport section are linearly arranged, for example, heat treatment at different temperatures, and furthermore, the temperature control processing can be performed efficiently and continuously. And the throughput can be improved.

In the present invention, the transfer of the substrate to and from the main transfer unit is performed in a state where the substrate is raised by the lifting pins, and the transfer of the substrate is performed to the temperature control and transfer unit in a state where the substrate is lowered. Therefore, the transfer of the substrate between the main transport section and the temperature control / transport section can be performed efficiently without wasting space.

In the present invention, by further providing a shutter mechanism for opening and closing the opening, the inflow and outflow of particles between the heat treatment system unit and the main transfer unit and mutual thermal interference are minimized. Can be suppressed.

According to the present invention, the apparatus further includes a liquid supply unit for supplying a predetermined liquid to the substrate, and the main transport unit is configured to transfer the substrate to and from the liquid supply unit. In addition, at least the main transport unit and the temperature control / transport unit are interposed between the processing unit that performs thermal processing on the substrate and the liquid supply unit. Therefore, it is possible to minimize the thermal effect of the processing unit on the liquid supply unit.

In the present invention, since the main transport section has the vertical transport mechanism for vertically driving the arm, the forward / backward drive mechanism and the rotary drive mechanism, the inertia in the rotational direction can be reduced. In addition, power consumption can be reduced.

According to the present invention, there is further provided an inspection section which is arranged at a position where the substrate can be transferred to or from the first or second main transport section or at the receiving section and performs an inspection on the substrate. Thus, the inspection of the substrate can be efficiently performed in the substrate processing process.

In the present invention, the liquid supply unit is controlled so that the pressure is higher than that of the processing unit and the main transport unit, and the pressure of the main transport unit and the processing unit is substantially equal. In addition, particles and the like do not flow into the liquid supply unit, and defects due to particles and the like in the liquid supply unit can be reduced.

In particular, the main transport section, the processing unit, and the liquid supply unit are respectively disposed in separate casings, and each of the casings has an opening for transferring a substrate. The pressure management can be performed efficiently and precisely by configuring the passage connecting the adjacent openings between the housings to be surrounded by the surrounding member.

Further, in particular, since a minute gap is provided between the surrounding member and at least one of the housings, the units can be efficiently installed.

The air pressure control means includes a gas supply section for supplying gas, a gas exhaust section for exhausting gas, and a gas pressure measurement section for each of the main transport section, the processing unit and the liquid supply unit. And a pressure measuring unit
By configuring to control at least one of the amount of gas supplied by the gas supply unit and the amount of gas exhausted by the gas exhaust unit based on the measured atmospheric pressure, precisely for each unit Atmospheric pressure can be controlled.

In the present invention, at least one of the housings of the main transport section, the processing unit and the liquid supply unit is provided.
In the end, an openable door used for internal maintenance is provided, and the air pressure control means, when the door is opened,
By controlling so as to increase the air pressure in the housing, or by surrounding the entire housing of the main transport unit, the processing unit and the liquid supply unit, and opening and closing the internal use for internal maintenance An outer casing provided with a panel is further provided, and the air pressure control means is configured to control so as to increase the air pressure in the outer casing when the panel is opened, so that particles can be removed during maintenance. Can be prevented from flowing into the apparatus.

In the present invention, a temperature control section is disposed adjacent to the main transport section, and a processing section is disposed such that the temperature control section intervenes with the main transport section. Since the temperature control or the humidity control of the liquid supply unit and the processing unit are separately performed, the temperature control or the humidity control can be performed efficiently and precisely for each unit. In particular, by configuring the processing unit to be covered by the temperature control mechanism, it is possible to reduce the thermal effect of the processing unit on other parts. Further, particularly, by arranging a heat shield plate that can be opened and closed between the temperature control unit and the processing unit, the processing unit thermally affects the temperature control unit, and further, the transport unit and the liquid supply unit. Giving less.

In the present invention, since the temperature control means is configured to control the temperature or humidity of the liquid supply mechanism, it is possible to accurately control the temperature of the liquid in the liquid supply unit.

In the present invention, the liquid supply unit can be replaced with a liquid supply mechanism for supplying the liquid to the liquid supply unit, so that space can be effectively utilized and the liquid supply unit can be used effectively. Since the temperature control and the like of the liquid supply unit can be used, the liquid temperature control and the like can be efficiently performed.

According to the present invention, there is provided a second main transfer device which is disposed on the other side of the processing unit group, is of a vertical transfer type which can access the respective processing units, and is movable in a predetermined plane direction. This eliminates wasted space and optimizes the footprint.

In the present invention, the substrate transfer device is of a vertical transfer type capable of transferring a substrate to and from each of the units, and a support member for supporting the substrate transfer device in the vertical direction is disposed on the front surface. Since it is attached to the processing unit side, the maintenance of the substrate transfer device from the side opposite to the processing unit side can be easily performed.

In the present invention, the opening and closing of each shutter member provided in each opening is controlled so that the second opening is closed when the first opening of the first processing unit is open. As a result, the first processing unit functions as a so-called load lock chamber, so that inflow and outflow of particles and the like between the transfer devices disposed on both sides of the first processing unit can be avoided as much as possible. .

According to the present invention, when the first opening of the first processing unit is open, the shutter members are opened and closed so that the second opening of the second processing unit closes. Since the configuration is such that control is performed, inflow and outflow of particles and the like between the first processing unit and the second processing unit can be avoided as much as possible.

According to the present invention, the first processing unit for supplying a predetermined liquid to the plate is disposed adjacent to the front side of the main transfer device, and includes a temperature control section for performing a temperature control process on the substrate. The temperature control unit in the second processing unit having a heating unit for performing a heat treatment on the substrate is disposed so as to be adjacent to the main transfer unit, and the heating unit is adjacent to the temperature control unit and the front main transfer unit. The main transfer device and the temperature control unit function as a heat insulating area interposed between the heating unit and the first processing unit, and are disposed from the heating unit to the first processing unit. Thermal effects can be avoided as much as possible.

[0098]

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1 to 3 show the overall structure of a substrate processing apparatus according to an embodiment of the present invention. FIG.
2 is a front view and FIG. 3 is a rear view.

In the substrate processing apparatus 1, a plurality of, for example, 25, semiconductor wafers W as substrates to be processed are loaded or unloaded from the system into or out of the system in units of wafer cassettes CR. A cassette station 10 as a receiving portion for loading / unloading W, and various single-wafer processing units for performing a predetermined process on the semiconductor wafers W one by one in a coating and developing process are arranged at predetermined positions in multiple stages. And an interface unit 14 for transferring a semiconductor wafer W between the processing station 12 and an exposure apparatus (not shown) provided adjacent to the processing station 12. ing.

In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, five wafer cassettes CR are provided at the positions of the projections 20 a on the cassette mounting table 20 in the X direction with their respective wafer entrances facing the processing station 12. A wafer carrier 22 that is placed in a line and is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction, so as to be able to access a heat treatment system unit belonging to a third processing unit section G3 having a multi-stage configuration described later as shown in FIG. It has become.

As shown in FIG.
The third processing unit G3, the fourth processing unit G4, and the fifth processing unit G5 are arranged on the rear side of the apparatus (upper side in the figure) from the cassette station 10 side. Unit part G3 and fourth
A first main wafer transfer section A1 as a first main transfer section is provided between the first main transfer section and the processing unit section G4. As will be described later, the first main wafer transfer section A1 is connected to the first main wafer transfer section A1 by the first processing unit section G1.
Third processing unit G3 and fourth processing unit G
4 and so on can be selectively accessed.
In addition, a second main wafer transfer unit A2 as a second main transfer unit is provided between the fourth processing unit unit G4 and the fifth processing unit unit G5, and the second main wafer transfer unit A2 is provided.
Are installed so that the second main wafer carrier 17 can selectively access the second processing unit G2, the fourth processing unit G4, the fifth processing unit G5, and the like.

A heat treatment unit is provided on the back side of the first main wafer transfer section A1.
Unit (A) for hydrophobizing
D) 110, heating unit (HP) for heating wafer W
As shown in FIG. 3, two layers 113 are sequentially stacked from the bottom. Adhesion unit (AD) is wafer W
May be further provided with a mechanism for controlling the temperature. On the back side of the second main wafer transfer section A2, a peripheral exposure apparatus (WEE) 120 for selectively exposing only the edge portion of the wafer W is provided.
Further, an inspection device 119 is provided as an inspection unit for inspecting the resist film thickness applied to the wafer W. The peripheral exposure device (WEE) 120 and the inspection device 119 may be arranged in multiple stages. In addition, the second main wafer transfer section A2
In some cases, the heat treatment unit is arranged and arranged on the back side of the first wafer transfer unit A1 similarly to the back side of the first main wafer transfer unit A1.

As shown in FIG. 3, in the third processing unit section G3, an oven-type processing unit for performing a predetermined process by placing the wafer W on a mounting table, for example, a first process unit for performing a predetermined heating process on the wafer W A high-temperature heat treatment unit (BAKE), a high-precision temperature control unit (CPL) for performing heat treatment on the wafer W with high-precision temperature control, and a wafer W from the wafer transfer body 22 to the main wafer transfer body 16. Transition unit (TRS),
Temperature control units (TCP) are stacked in, for example, 10 stages from the top. In the third processing unit section G3, in the present embodiment, the third row from the bottom is provided as a spare space. Also in the fourth processing unit G4, for example, a post-baking unit (POST) as a fourth heat-treating unit, a pre-baking unit (PAB) as a second heat-treating unit for performing a heat treatment on the wafer W after resist application, and The temperature control units (CPL) are stacked in, for example, 10 stages from the top. Further, in the fifth processing unit G5, for example, a post-exposure baking unit (PEB) and a high-precision temperature control unit (CPL) as a third heat treatment unit for performing heat treatment on the exposed wafer W are, for example, 10 stages from the top. Is overlaid.

In FIG. 1, a first processing unit G1 and a second processing unit G2 are provided side by side in the Y direction on the front side (lower side in the figure) of the processing station 12 in the apparatus. Each processing unit G1 is located between the first processing unit G1 and the cassette station 10 and between the second processing unit G2 and the interface 14.
And liquid temperature control pumps 24 and 25 used for controlling the temperature of the processing liquid supplied to the processing system G2, and further, clean air from an air conditioner (not shown) provided outside the processing system. Ducts 31 and 32 for supplying the inside of the unit sections G1 to G5 are provided.

As shown in FIG. 2, in the first processing unit section G1, five spinner type processing units as liquid supply units for performing predetermined processing by placing the semiconductor wafer W on the spin chuck in the cup CP, For example, a resist coating unit (COT) is stacked in three stages, a bottom coating unit (BARC) for forming an anti-reflection film for preventing reflection of light at the time of exposure is stacked in two stages, and five stages in order from the bottom. Similarly, in the second processing unit G2,
Five spinner-type processing units, for example, developing units (DEV) are stacked in five stages from the bottom. In the resist coating unit (COT), the drainage of the resist solution is troublesome both mechanically and in terms of maintenance, so that it is preferable to arrange the resist solution in the lower stage. However, they can be arranged in the upper stage as needed.

The first to fifth processing units G1 to G5
The G5, the adhesion unit 110, the heating unit (HP) 113, the exposure processing apparatus (WEE) 120, and the inspection apparatus 119 can be removed for each maintenance, and the panel on the back side of the processing station 12 can be removed. 40 (FIG. 1) is also detachably mounted.

Further, the first and second processing unit sections G1
And G2, the processing units G1 and G2
Are provided with chemical chambers (CHM) 26 and 27 as a liquid supply mechanism for supplying the above-mentioned predetermined processing liquid.

A central control section 8 for controlling the entire system of the substrate processing apparatus 1 is provided below the cassette station 10.

A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 14, and a wafer carrier 27 is arranged at the center.
Is provided. The wafer carrier 27 moves in the X and Z directions to access both cassettes CR and BR. Further, the wafer transfer body 27 is configured to be rotatable in the θ direction, so that it can also access the fifth processing unit G5. Further, as shown in FIG. 3, a plurality of high-precision temperature control units (CPL) are provided on the back surface of the interface unit 14, for example, in two stages, upper and lower. The wafer carrier 27 is provided by this temperature control unit (CPL).
Is also accessible.

Next, the configuration of the first main wafer transfer section A1 as the main transfer section will be described with reference to FIGS. Note that the second main wafer transfer section A2 is the same as the first main wafer transfer section A1, and a description thereof will be omitted.

In FIG. 4, the main wafer transfer section A1 is surrounded by a housing 41 and a door 38 which can be opened and closed on the rear side of the housing 41. In FIG. Body 41 and door 38
Are not shown. The door 38 has access to an adhesion unit (AD) 110, and in the case of the second main wafer transfer section A2, the peripheral exposure device 12
Window 38a to allow access to the
Are formed. Windows 41b and 41a are provided on the front and side surfaces, respectively, so that the housing 41 can be accessed from the outside. Five front windows 41b are provided (FIG. 5) for transferring the wafer W to and from the first processing unit G1 arranged in five stages, while the side windows 41a are provided. As shown in FIG. 6, the third
And ten wafers W for transferring the wafer W to and from the fourth processing unit G4. These windows can be increased or decreased as needed. Further, on both side surfaces of the housing 41, surrounding members 44 connecting the third and fourth processing unit portions G3 and G4 are provided with a small gap u with respect to the processing unit portions G3 and G4. Each is attached. This gap u is a distance that can suppress generation and intrusion of particles, for example, 0.1 mm.
5 mm. Each of the processing unit portions G3 and G4 sides of the surrounding member 44 has a shock-absorbing packing 30, and windows 30a respectively corresponding to the packing 30 are formed as shown in FIG. Also,
A partition plate 34 for partitioning each window 30a in the surrounding member.
Are provided.

In FIG. 4, portions corresponding to the five openings 97 provided in the housing 41 'on the first and second processing unit portions G1 and G2 have the same structure as the surrounding member 44. When the surrounding member 44 'is the main wafer transfer section A1 (A2)
And a small gap u (for example, 0.5 mm).

At the bottom of the first main wafer transfer section A1, a fan 36 for controlling the internal pressure, temperature and humidity is provided.
Are provided, for example, four. The operation of these fans 36 is controlled by the central control unit 8 (FIG. 2).

As shown in FIGS. 4 and 5, a vertical pole 33 is provided on the first and second processing unit sections G1 and G2 in the housing 44. As shown in FIG. 7, a pair of pulleys 51 and 52 are attached to an upper end and a lower end, and an endless belt 49 as a vertical driving means is stretched between the pulleys 51 and 52. The support 45 of the first main wafer carrier 16 is connected to the vertical drive belt 49 via a belt clamp 47. Further, as shown in FIGS. 4 and 5, the support portion 45 is provided with a flange portion 45a,
The flange portions 45a are slidably engaged with sleeves 33a formed on the pawls 33, respectively. The lower pulley 52 is connected to the rotation shaft Ma of the drive motor M fixedly arranged at the bottom of the pole 33, and forms a drive pulley. With such a vertical belt driving mechanism and a vertical sliding mechanism, the main wafer carrier 16 can be moved up and down in the vertical direction by the driving force of the driving motor M.

The above elevating mechanism is similarly installed on the other pole 33, but the other pole 33 may not have the drive motor M.

The main wafer carrier 16 has a built-in motor 50 in the support portion 45 thereof.
A rotating rod 46 rotatable in the direction (FIG. 5) is connected,
At the upper end of the rotating rod 46, three arms 7a, 7b
The arm base end 55 serving as the base end of the arm 7c is fixed.

FIG. 8 is a view of the main wafer carrier 16 viewed from the front side in the state of FIG. Vertical members 95 are attached to both sides of the distal end of the arm base end portion 55. The vertical members 95 are provided with shielding plates 9 between the upper arm 7a and the middle arm 7b, which shield radiant heat from both arms. And a mounting member 9 extending between the vertical members 95.
6 is attached. A pair of optical sensors 94 are provided at the center of the mounting member 96 and at the distal end of the arm base end portion 55, whereby the presence or absence of the wafer W on each arm and the protrusion of the wafer W are confirmed.

FIG. 9 is a sectional view showing the configuration of the base end portion 55 of the main wafer carrier 16, and FIG. 10 is [10]-in FIG.
[10] Line sectional view. An arm support plate 54 is fixed to the base end of each of the arms 7a to 7c. These arm support plates 54 are formed in an L-shaped cross section, and each arm support plate 54 has a base 55 of a base end 55.
Arm carriages 56 that are movable in the arm longitudinal direction along rails 61 laid on a are fixedly mounted.

At the lower portion of each arm carriage 56, a guide 62 slidably engaged with each rail 61 is provided. Further, the inner side surface of each arm carriage 56 is provided near a pulley 63 disposed near the arm original position (the base end 55b of the base 55) and near the arm forward end position (the distal end 55c of the base 55), respectively. Drive belts 6 respectively stretched between the pulleys 64
5 are respectively fixed via belt clamps 66. Each pulley 63 is coaxially coupled to a pulley 68 via a bearing 67, and each pulley 68 is connected to a pulley 70 via a drive belt 69, and each pulley 70 is connected to a drive motor 60
Is fixed to the rotating shaft.

When the rotation shaft of each motor 60 rotates, each pulley 63 rotates via each pulley 70, each drive belt 69, and each pulley 68, and each drive belt 65 is driven by the rotation drive of each pulley 63. Each arm carriage 56 moves along each rail 61 along with each drive belt 65, and the moving direction is determined by the rotation direction of each motor 60. It should be noted that these motors are naturally driven independently, and the arms 7a to 7b are independently movable.

With the structure of the main wafer carrier 16 described above, each of the arms 7a to 7b can rotate in the θ direction.
The processing units G1, G3, and G4 can be moved in the X, Y, and Z directions and can be accessed as described above.

Referring to FIGS. 11 to 13, a pre-baking unit (PAB) and a post-exposure baking unit (PEB) among ten stages belonging to the fourth processing unit G4 and the fifth processing unit G5. ),
The post baking unit (POST) will be described. Each of these baking units only differs in processing temperature.

As shown in FIG. 11, such a heat treatment unit has a heat treatment apparatus H on the front side of the system and a temperature control / conveyance apparatus C on the back side in a housing 75. The heat treatment apparatus H includes a hot plate 86 heated by a heating wire 86b in a cylindrical support 88 via a suitable heat insulating material.
Is provided. Below the support 88, three pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82. The three pins 85 are provided in a through-hole 86a formed in a hot plate 86. It is placed buried in.

On the other hand, the temperature control / conveyance device C is provided with sliders 79a and 79b which are movable along, for example, two guide rails 77 arranged along the X direction. The temperature control / transport plate 71 is connected via the connecting members 78, 78 attached respectively.
Has been fixed. Below the temperature control / transport plate 71, elevating pins 84 for transferring the wafer W are installed so as to be able to move up and down by a driving device. A notch 71a is formed in the temperature control / conveyance plate 71 so that each lifting pin 84 buried under the plate can be raised. As the temperature control mechanism, the temperature of the wafer W is adjusted to a predetermined temperature, for example, 40 ° C. by using cooling water or the like, and temperature control is performed. One of the sliders 79a is provided with a drive device (not shown), for example, a drive device using air or a motor, and the other slider 79b is provided with a sensor (not shown) for recognizing an operation position.

On the front side (left side in the figure) of the housing 75, an air flow path 75c for controlling air pressure, which will be described later, is formed. The air flow path 75c controls and conveys the temperature through a fan 87a. It communicates with the device C side. Also, this flow path 75c
Although not shown in the figure, the line extends from the uppermost stage to the lowermost stage in the vertical direction (Z direction). Also, the housing 7 on the heat treatment apparatus H side
Fans 87b are also installed on both side surfaces of No. 5, respectively, and an exhaust port 75d is formed, which also communicates from the uppermost stage to the lowermost stage.

Further, for example, the fourth processing unit section G4
The opening 75a is provided for transferring the wafer W to and from the first main wafer transfer section A1, and the second side of the second main wafer transfer section A2 is provided on the other side.
The opening 75b is provided so as to face the window 41a. These openings 75a and 75b are provided with shutters 76a and 76b that can be opened and closed, respectively. The shutters 76a and 76b are opened and closed by a drive unit (not shown) under the central control unit 8.

FIG. 13 shows a fourth processing unit G4 (fifth processing unit).
FIG. 14 is a side sectional view of the entire processing unit G5), and heat diffusion to the outside of the fourth processing unit G4 (fifth processing unit G5) is shown on both side portions on the side of the heat treatment apparatus H, as shown. In order to suppress the increase in the temperature of the atmosphere in the apparatus, a temperature control pipe 90 through which cooling water flows is provided from the uppermost stage to the lowermost stage.
It is connected to a pump provided below (G5).

Next, referring to FIG. 14, all the units of the heat treatment system (third to fifth processing unit sections G3 to G5)
A high-precision temperature control unit (CPL) belonging to Regarding this, since the temperature control / conveyance device C in the above-described pre-baking unit (PAB) or the like is replaced with the high-precision temperature control device C2 and the heat treatment device H is not provided, the pre-baking unit (PAB) or the like is not used. The same reference numerals are given to the same components as those in the above, and the description thereof is omitted.

This high-precision temperature control device C2 has a high-precision temperature control plate 133 provided in a cylindrical support 131. Although not shown in the high-precision temperature control plate 133,
For example, a Peltier element is used, and the temperature of the wafer W is adjusted to a predetermined temperature, for example, 23 ° C. by feedback control, so that precise temperature control can be performed. Support 1
Below the 33, three lifting pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82, and the lifting pins 85 are mounted on the high-precision temperature control plate 133.
And is buried in the through hole 133a formed in the hole.

Next, with reference to FIG. 15, the configuration of the high temperature heat treatment unit (BAKE) belonging to the third processing unit section G3 will be described. The same components as those in the pre-baking unit (PAB) are denoted by the same reference numerals, and description thereof will be omitted.

A temperature control device C1 is disposed on the front side of the system in the housing 75, and the temperature control device C1 is a cylindrical support 1
A temperature control plate 163 is provided in 61. The temperature control of the temperature control plate 163 is performed using, for example, cooling water or the like, similarly to the pre-baking unit (PAB). On the other hand, a thermal high-temperature heat treatment apparatus HH for performing heat treatment at a higher temperature than the heat treatment apparatus H in the pre-baking unit (PAB) or the like is disposed on the back side. The configuration of the high-temperature heat treatment apparatus HH is the same as that of the heat treatment apparatus H, except that a high-temperature hot plate 112 is provided on a cylindrical support member 88 via a suitable heat insulating material. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82. The three pins 85 are formed on the respective hot plates 112 through the through holes. It is buried in the hole 112a.

The temperature control device C1 and the high temperature heat treatment device H
The reason why the distance to H is set larger than the distance between the temperature control / transfer device C and the heat treatment device H in a pre-baking unit (PAB) or the like is that the heat treatment at a high temperature of the high temperature heat treatment device HH is performed. This is to prevent the influence from affecting the temperature control process of the temperature control device C1.

The temperature control device C and the high temperature heat treatment device HH
A guide rail 118 is extended in the X direction, and a sub arm 115 is provided as a sub-transfer section for transporting the wafer W along the guide rail 118 so as to be movable by a driving device (not shown). Have been. The sub arm 115 has a pair of hands 115a, 115a.

The fourth and fifth processing unit sections G4 and G
Although the detailed configuration of the temperature control unit (TCP) belonging to the lower two stages below 5 is not shown, it has the same configuration as that of the above-described high-precision temperature control unit (CPL). Temperature control is performed by using cooling water, a Peltier element, or the like as an adjusting mechanism. For example, the number of Peltier elements in this case is smaller than the number of Peltier elements of the high-precision temperature control plate 133.

FIG. 16 shows a transition unit (TRS) belonging to the third processing unit section G3. This is different from other heat treatment units in that there is no heat treatment system device or the like (for example, a temperature control device C1), and only a lift pin 85 and a drive device for driving the lift pin 85 up and down. Other components of the transition unit (TRS) are the same as those of the high-precision temperature control unit (CPL). Although the spare space belonging to the third processing unit G3 described above is not shown, as in the case of the transition unit (TRS), the elevation pins and the elevation pins are used to transfer the wafer W to and from another processing unit. There is only a driving device for driving.

It should be noted that, with respect to the apparatuses H and HH of the heat treatment system shown in FIGS.
Although not shown, a chamber cover that can be opened and closed when performing a heating process on the wafer W is provided on 6 and 112.

Next, the structure of the resist coating unit (COT) shown in FIGS. 17 and 18 will be described.

In this unit, a fan / filter unit F for air control, which will be described later, is mounted above the housing 41 ', and below the housing 41'.
An annular cup CP is disposed near the center of the unit bottom plate 151 smaller than the width in the Y direction of ′, and a spin chuck 142 is disposed inside the cup CP. This spin chuck 1
Reference numeral 42 is configured to rotate with the rotational driving force of the drive motor 143 in a state where the wafer W is fixed and held by vacuum suction. In the cup CP, a pin 148 for transferring the wafer W is provided so as to be able to move up and down by a driving device 147, and a drain port 145 for waste liquid is provided. The drain pipe 141 is connected to the drain port,
The waste liquid pipe 141 communicates with a lower waste liquid port (not shown) using a space N between the unit bottom plate 151 and the housing 41 ′. The waste liquid pipes 141a are respectively connected to a plurality of resist coating units (COT). Therefore, each waste pipe 141a is connected to this processing unit as shown in FIG.
Arranged in columns.

On the other hand, the opposite side (right side in FIG. 17)
The space L between the housing 41 'and the unit bottom plate forms an air flow path for controlling the atmospheric pressure, which will be described later, and another resist coating unit (COT) below the resist coating unit (COT). The fan / filter unit F of ()) is visible.

A nozzle 135 for supplying a resist to the surface of the wafer W is connected to a liquid supply mechanism (not shown) in a chemical chamber (CHM) 26 (FIG. 2) via a supply pipe 134. . The nozzle 135 is detachably attached to the tip of the nozzle scan arm 136 by a nozzle standby unit 146 provided outside the cup CP, and is transferred to a predetermined resist discharge position set above the spin chuck 142. It has become. The nozzle scan arm 136 is attached to the upper end of a vertical support member 149 that can move horizontally on a guide rail 144 laid in one direction (Y direction) on the unit bottom plate 151, and a Y-direction drive mechanism (not shown) Thereby, it moves in the Y direction integrally with the vertical support member 149.

The nozzle scan arm 136 can also be moved in the X direction perpendicular to the Y direction in order to selectively attach the nozzle 135 in the nozzle standby section 146 according to the type of the resist. Is also going to move.

Further, a drain cup 138 is provided between the cup CP and the nozzle standby section 146, and at this position, the nozzle 135 is cleaned before the resist is supplied to the wafer W.

On the guide rail 144, a vertical support member 149 for supporting the above-described nozzle scan arm 136 is provided.
In addition, a vertical support member that supports the rinse nozzle scan arm 139 and is movable in the Y direction is also provided.
A rinsing nozzle 140 for side rinsing is attached to the tip of the rinsing nozzle scan arm 139.
The rinsing nozzle scan arm 139 and the rinsing nozzle 140 are moved by the cup C by a Y-direction driving mechanism (not shown).
The nozzle standby position (solid line position) set beside P and the rinsing liquid discharge position (dotted line position) set just above the peripheral portion of the wafer W placed on the spin chuck 142
It translates or moves linearly between and.

Next, the configuration of the developing unit (DEV) shown in FIGS. 19 and 20 will be described. This developing unit (DE
In V), the same components as those in the resist coating unit (COT) are denoted by the same reference numerals, and description thereof will be omitted.

The nozzle 153 for supplying the developing solution to the wafer surface of the wafer W is slightly longer than the diameter of the wafer W,
Although not shown, a plurality of holes for discharging the developer are formed. A nozzle standby unit 154 is provided on a side of the cup CP, and a rinse nozzle 155 for supplying a rinsing liquid for washing the developing solution to the surface of the wafer W is provided. The rinse nozzle 155 has the same configuration as the nozzle 153. Further, in the nozzle standby section 154, dummy dispensing is performed periodically or as needed in order to discard the developing solution dried and deteriorated at the tip of the nozzle 135.

Although the nozzle scan arm 136 of the resist coating unit (COT) was also movable in the X direction, the nozzle scan arm of this developing unit (DEV) was moved only in the Y direction along the guide rail 144. It has become.

The bottom coating unit (BA
Regarding RC), the coating liquid in the resist coating unit (COT) is merely replaced with an anti-reflective coating material, and the description of the configuration is omitted here.

Next, a series of operations of the substrate processing apparatus 1 described above will be described with reference to a flowchart shown in FIG.

First, in the cassette station 10, the wafer carrier 22 accesses the cassette CR on the cassette mounting table 20 which stores the wafer before processing, and
One semiconductor wafer W is taken out from the cassette CR (S1). When the semiconductor wafer W is taken out from the cassette CR, the wafer transfer body 22 is rotated by 180 ° in the θ direction, and the temperature control unit (TC) in the third processing unit G3 is rotated.
P), the shutter 76a of the opening 75a (FIG. 11, FIG. 1)
2) is opened and the hand of the wafer transfer body 22 is opened
The wafer W is inserted into the housing 75 and placed on the temperature control plate. Then, a predetermined temperature control process (first temperature control) is performed (S2).

When the temperature control processing in the temperature control unit (TCP) is completed, the opening 75b on the opposite side is opened, and the first opening 75b is opened from there.
The upper arm 7a of the main wafer carrier 16 is inserted and the wafer W is transferred to the arm 7a. Then, the main wafer carrier 16 rotates 90 ° counterclockwise in FIG.
The shutter 43 of the bottom coating unit (BARC) belonging to the first processing unit G1 is opened, the upper arm 7a is inserted into the housing, and the wafer W is placed at a predetermined position to form an anti-reflection film. (S3). As described above, the transfer of the wafer W from the temperature control system processing unit to the coating system processing unit (G1 and G2) is performed by the upper arm 7a.
The transfer after the heat treatment described later is performed by the middle arm 7.
b or by using the lower arm 7c, the thermal influence on the wafer W can be minimized.

Bottom coating unit (BARC)
Is completed, the shutter 43 is opened, the middle arm 7b (or the lower arm 7c) is inserted and the wafer W is delivered, and the middle arm is returned to the original position (in the housing 41). Then, the wafer W is transferred to the heating unit (HP) 113 and subjected to a first pre-stage heating process (S4). The heating temperature is, for example, 120 ° C.

Next, in the high temperature heat treatment unit (BAKE) shown in FIG.
Is opened, and the first wafer on which the wafer W is mounted is opened.
The middle arm 7b (or the lower arm 7c) of the main wafer carrier A1 moves in the Y direction to a position immediately above the temperature control device C1, and the elevating pins 127 in the temperature control device C1 rise to be higher than the height of the sub arm 115. After the wafer W is placed on the pins 127 at the position, the middle arm 7b returns to the original position and the shutter 76 closes. At this time, the sub arm 115 stands by near the center of the unit so as not to hinder the operation of the main wafer carrier 16. Then, the standby sub arm 115 moves onto the temperature control device C1. Then, the wafer W is transferred to the sub-arm 115 while the elevating pins 127 are lowered with the wafer W placed thereon.

Sub arm 115 receiving wafer W
Is moved to the back side in the X direction, and is similarly mounted on the hot plate 112 of the high-temperature heat treatment apparatus HH, which is the next step, by the driving of the elevating pins to perform a predetermined first post-stage heat treatment. (S5). This heat treatment is performed, for example, at 230 ° C. for a predetermined time.

When the predetermined heat treatment is completed by the high-temperature heat treatment apparatus HH, the wafer W is moved to the temperature control apparatus C1 by the sub-arm 115, and is placed on the temperature control plate 163 via the elevating pins 127 so as to have a predetermined temperature. Is adjusted to (S6).

The wafer W is the first main wafer carrier 1
6, the first from the high temperature heat treatment unit (BAKE)
The high-precision temperature control unit (CPL) belonging to the fourth processing unit G4
Is transported by the same operation. And here, for example, temperature 2
A predetermined temperature control process is performed at 3 ° C. (second temperature control) (S
7).

When the temperature control process is completed, the shutter 43 shown in FIG. 17 is opened, transported to the resist coating unit (COT) belonging to the first processing unit G1, and the resist liquid coating process is performed. (S8).

In the resist coating unit (COT), when the wafer W is transported to a position immediately above the cup CP, first, the pins 148 rise, receive the wafer W, and then descend, so that the wafer W is spin-chucked. It is placed on 142 and vacuum-adsorbed. Then, the nozzle 135 that has been waiting in the nozzle standby unit is moved by the mechanism of the nozzle scan arm 136 and the guide rail 144 to the wafer W shown in FIG.
Move to above the center position of. After a predetermined resist solution is applied to the center of the wafer W, the drive motor 1
For example, the resist liquid is rotated at 100 rpm to 3000 rpm by 43 and the resist liquid is diffused over the entire surface of the wafer W by the centrifugal force to complete the application of the resist liquid.

Subsequently, the shutter 76b of the pre-baking unit (PAB) in the fourth processing unit G4 opens, and as shown in FIG. 22 (a), the middle arm 7b on which the wafer W is placed is adjusted in temperature in the Y direction. After moving to the position immediately above the transfer plate 71, the elevating pins 84 move up as shown in FIG. 7B, and after the wafer W is placed on the pins, the middle arm 7b returns to the original position and , Shutter 7
6b is closed, and the elevating pins 84 are lowered as shown in FIG. 9C, and the wafer W is placed on the temperature control / transfer plate 71 (S9). Note that the chamber cover 170 in the heat treatment apparatus H is in a closed state during FIGS. 22A to 22C.

Then, as shown in FIG. 23A, the chamber cover 170 is opened upward, and the temperature control / transfer plate 71 on which the wafer W is placed is moved to the back side, and the hot plate 8 is turned on.
6 and then the pins 85 are raised and the wafer W is placed on the pins as shown in FIG. 7B, and then the temperature control / transport plate 71 is returned to the original position. As shown in FIG. 3C, the pins 85 are lowered, the wafer W is placed on the hot plate 86, the chamber cover 170 is lowered and closed, and a predetermined second heat treatment (PAB) is performed. This is performed (S10). Thus, the residual solvent is evaporated and removed from the coating film on the semiconductor wafer W.

When the predetermined heat treatment is completed by the heat treatment apparatus H, the operation reverse to the operation shown in FIG. 23 is performed. That is, the wafer W is placed on the temperature control / transport plate 71 from the hot plate 86 by the temperature control / transport device C and returns to the front side. At this time, the temperature controller / transfer device C controls the heated wafer W
Is moved to the front side while adjusting the temperature of, for example, 40 ° C. (while controlling the temperature of the wafer W) (S11). As a result, the processing time from the heating process to the temperature control process can be shortened, and the throughput can be improved.

Then, the wafer W is taken out of the temperature controller / transfer device C by the second main wafer transfer body 17 in the reverse operation to the operation described with reference to FIG. The sheet is conveyed to the film thickness inspection section 119 and the peripheral exposure unit section 120 through the window 38a. Here, after the predetermined film thickness inspection and the substrate peripheral exposure process are performed (S12), the second main wafer carrier 17 again moves the elevating pins 84 of the temperature control / transport device C of the fifth processing unit G5. Through the interface unit 14 (S13) by the wafer carrier 27
Is transferred to an unillustrated exposure apparatus (S15). In this case, the wafer W may be temporarily stored in the buffer cassette BR before being transferred to the exposure apparatus. After that, the high-precision temperature control unit (C
A predetermined temperature control process is performed by the (PL) 130 (S1).
4). In addition, in the film thickness inspection, a unit for performing a microscopic inspection using an inspection device instead of an inspection with the naked eye directly, and also performs, for example, a foreign material inspection such as particles and a surface inspection in addition to the film thickness inspection. In this regard, for example, the inspection may not be performed on all the wafers W but may be appropriately performed.

When the exposure processing is completed, the wafer W is again transferred to the wafer carrier 2 via the interface unit 14.
7, the wafer is conveyed to a post-exposure baking unit (PEB) belonging to the fifth processing unit G5. In this case also, the temperature is controlled from the wafer carrier 27 by the same operation as that described in S9 to S11.・ Transferred to the transfer device C (S16), transferred from the temperature control and transfer device C to the heat treatment device H, and subjected to heat treatment by the heat treatment device H (third heating) (S17). For example, the wafer is transferred while being adjusted to a predetermined temperature of about 40 ° C. (S18), and is transferred to the second main wafer transfer section A2 in the second main wafer transfer section A2.
The wafer W is taken out by the main wafer carrier 17.

Next, a high-precision temperature control unit (CPL) belonging to the fifth processing unit G5 performs a temperature control process, for example, at 23 ° C. (fourth temperature control) (S19). Is transported to the developing unit (DEV) belonging to the second processing unit G2, and the developing solution is applied (S20).

In the developing unit (DEV), when the wafer W is transported to a position immediately above the cup CP, the pins 148 first rise, receive the wafer W, and then descend, and the wafer W is moved to the spin chuck 142. It is placed on it and vacuum-adsorbed. Then, the nozzle 135 waiting in the nozzle standby section moves to a position above the peripheral position of the wafer W by the mechanism of the nozzle scan arm 136 and the guide rail 144. Subsequently, the wafer W is rotated at, for example, 10 rpm to 100 rpm by the drive motor 143, and the nozzle 135 moves in the Y direction from the periphery of the wafer W, and a predetermined developing solution is applied by the centrifugal force of the rotation.

Next, the sheet is conveyed to the post-baking unit (POST) belonging to the fourth processing unit G4. In this case, the main operation is the same as the operation described in S9 to S11 and S16 to S18. Wafer carrier 17
Is transferred to the temperature control and transfer device C (S21), transferred from the temperature control and transfer device C to the heat treatment device H, and subjected to heat treatment by the heat treatment device H (fourth heating) (S22).
The wafer W is transferred by the transfer device C while adjusting the temperature thereof (S23), and the wafer W is taken out by the first main wafer transfer body 16 in the first main wafer transfer section A1. This heat treatment is performed, for example, at 100 ° C. for a predetermined time. Thereby, the resist swollen by the development is hardened, and the chemical resistance is improved.

The wafer W is returned by the main wafer carrier 16 to the cassette CR of the cassette station 10 via the spare space in the third processing unit G3 and the wafer carrier 22 (S24). Here, before returning to the cassette CR of the cassette station 10, a macro inspection device (not shown) provided on the back side of the cassette station 10 may macroscopically inspect processing unevenness on the wafer substrate W with the naked eye. is there. In addition to the macro inspection, for example, pattern defects after development, line width,
An inspection such as overlay / overlay accuracy may also be performed. Such a macro inspection device may be externally attached so as to protrude to the rear side of the cassette station 10, or may be arranged inside the cassette station 10.

As described above, the first heating (S5),
Immediately after the second heating (S10), the third heating (S17), and the fourth heating (S22), since the temperature is controlled while being transported by the temperature and transport device C, each subsequent process is performed. In the second temperature control (S7), the third temperature control (S14) and the fourth temperature control (S19), the temperature control processing time can be reduced, and the throughput is improved.

Further, each of the heat treatment units G3 to G5
The coating processing units G1 and G2 are composed of five stages, and each of the processing units G1 to G5
Is the main wafer transfer section A of the first main wafer transfer sections A1, 21
2, the main wafer carriers 16 and 17 can efficiently access the respective processing units and contribute to the improvement of the throughput.

Further, the heat treatment is performed by the heat treatment device H from the main wafer transfer bodies 16 and 17 via the temperature control and transfer device C, that is, before the heat treatment, the temperature control and transfer device C must be used. Since the temperature of the wafer W is maintained at a predetermined temperature, there is no difference in the processing state even if the heating processing time is fixed, and the thermal history of the wafer W in the entire substrate processing can be constant.

Further, as shown in FIG. 1, between the heating devices H, HH, etc. in the processing units G3 to G5 of each heat treatment system and each of the coating system processing units G1 and G2, a temperature control system C1, Since C2 and C are arranged respectively, each of the heating devices H and HH etc.
2 can be minimized.

On the other hand, between the main wafer transfer units A1 and A2 and the processing units G1 to G5, the surrounding members 44, 44
′, It is possible to prevent particles from entering each processing unit and each transport unit.

As shown in FIG. 4, the surrounding members 44 and 44 'are provided with gaps u between the surrounding members 44 of the first and second main wafer transfer sections A1 and A2 and the respective processing units. The main transfer wafer transfer section A
Vibration due to the transport of 1 and A2 is not transmitted to each processing unit, and each heat treatment and each coating treatment can be reliably performed.

Next, with reference to FIGS. 24 to 26, the control of the atmospheric pressure and the temperature / humidity of the substrate processing apparatus 1 will be described.

Referring to FIG. 24, cassette station 1
0, processing station 12 and interface unit 14
The air supply chambers 10a, 12a, and 14a are provided above the air supply chambers.
1, 102 and 103 are attached. Clean air from the ULPA filters 101, 102, and 103 in each air supply chamber is supplied to each section 10, 12, and 14 in a down flow, and the air is supplied from the air supply chamber to each processing unit as shown in FIGS. 24 and 25. It is made to flow. The air of this downflow is supplied from the above-mentioned ducts 31 and 32 in the direction of the arrow (upward), but in the first and second processing unit sections G1 and G2, each fan provided on the back side thereof The lower exhaust port 125 from the exhaust duct 100 (see FIG. 24) via 106
And the third to fifth processing unit sections G3 to
In G5, the flow path 75b and the fans 87a, 87b
(FIG. 11), the exhaust port 1 below the exhaust port 75d.
It is evacuated to 25. Further, as shown in FIG. 26, in the first and second main wafer transfer units A1 and A2, the air is exhausted from the lower exhaust port 125 via each fan 36, and further, the peripheral exposure apparatus 1 is opened through the window 38a of the door 38.
20 and the inspection unit 119, and the exhaust port 12
5 is exhausted. Each of the above fans 10
The rotation speed of each of the units 6, 87a, 87b, and 36 is individually controlled by the control unit 8.

In each of the coating system units (G1, G2), a fan / filter unit F is mounted above each of them, and sensors S for measuring atmospheric pressure, temperature, and humidity are provided. . This fan / filter unit F is, for example, UL
It has a PA filter and a small fan. On the other hand, the same sensor S is provided in the third to fifth processing unit sections G3 to G5 and each unit, and the sensor S is also provided in the first and second main wafer transfer sections A1 and A2. . The detection results of each of the sensors S are taken into the control unit 8.

With the above configuration, the air pressure in the first and second processing units G1 and G2 is controlled by controlling the air pressure in the first and second main wafer transfer units A1 and A2.
The control is performed, for example, by 0.3 (Pa) to 0.4 (Pa) higher than the air pressure in the third to fifth processing units G3 to G5. In this way, the pressure in the coating units G1 and G2 is controlled to be higher than the pressure in the heat treatment system and the transport system.
That is, by performing the positive pressure control, it is possible to perform the coating processing in the coating system unit in which the restriction of the particles is required most reliably and accurately.

With the above arrangement, the pressure, temperature and humidity in each of the first to fifth processing unit sections G1 to G5 and the first and second main wafer transfer sections A1 and A2 are individually PID. Since the control is performed, each process can be performed in an optimum environment suitable for the process of each unit.

Also, in FIG. 4, when the first or second main wafer transfer section A1 or A2 is maintained, the door 38
When all of the units G are opened,
The air pressure is further increased by increasing the amount of clean air supplied into 1 to G5 and all the main transport sections A1 and A2.
Thereby, particles generated at the time of maintenance can be suppressed. Further, in addition to the air pressure control, when the rear panel 40 in FIG. 1 is removed or opened and closed, the air pressure in the entire system (substrate processing apparatus 1) may be increased. In such a case, a fan that operates only at the time of maintenance may be separately provided to increase the pressure in the entire system (the substrate processing apparatus 1).

Further, as shown in FIG. 1, between the heating devices H, HH, etc. in the processing unit sections G3 to G5 of each heat treatment system and each of the coating system processing units G1 and G2, a temperature control system C1, Since C2 and C are arranged respectively, each of the heating devices H and HH etc.
2 can be minimized. Therefore, the temperature control in each of the coating processing units G1 and G2 can be performed precisely.

In the substrate processing apparatus 1, as shown in FIG. 27, in each of the units G3 to G5 of the heat treatment system, when one window 75a is opened by the shutter 76a, the other window 75b is opened. Is the shutter 76
The opening / closing control is performed so as to be closed by b. As a result, each unit functions as a so-called load lock chamber, and the environment on both sides straddling each unit can be effectively shut off, so that a good processing environment can be maintained in each unit.

Further, in the substrate processing apparatus 1, as shown in FIG. 28, when the openings 97 of the respective units G1 and G2 of the liquid supply system are opened by the shutter 43, both sides of the unit are opened. Windows 75a of each unit in each of the unit sections G3 to G5 of the heat treatment system,
Opening and closing control is performed so that 75b is closed by shutters 76a and 76b. This prevents an atmosphere that adversely affects the processing from flowing from the liquid supply system unit to the heat treatment system unit.

Further, this system is provided in a chemical room (CH
M) The temperature of the liquid supply devices 58 and 59 in 26 and 27 can also be adjusted. Thus, the coating processing unit G1
And the temperature of the processing liquid supplied to G2 is maintained in a suitable state. The chamber used as the processing unit of the coating system can be replaced with a chemical chamber.

FIG. 29 shows a heat treatment unit according to the second embodiment of the present invention, and a description of the same elements as those in FIGS. 11 and 12 will be omitted.

In the heat treatment unit G3 ', the housing 75
Inside, a temperature control device C1 ', a low-temperature heat treatment device LH, and a high-temperature heat treatment device HH are arranged, for example, linearly from the front side (left side in the figure). These heat treatment devices LH, H
H is only the difference of the heating temperature, and these configurations are the same as those of the heat treatment apparatus H of the first embodiment.
The low-temperature heat treatment apparatus LH is provided with a low-temperature hot plate 111 and the high-temperature heat treatment apparatus HH is provided with a high-temperature hot plate 112 via a suitable heat insulating material. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82. The three pins 85 are formed on the hot plates 111 and 112, respectively. Through hole 11
1a and 112a. On the other hand, the temperature control device C1 'is, for example, a temperature control unit (CO
This is the same as the temperature control device in L), and uses a Peltier element and cooling water as the temperature control mechanism.

A guide rail 1 is located beside these temperature control device C1 ', low temperature heat treatment device LH and high temperature heat treatment device HH.
18 extend in the X direction, and the guide rail 118
A sub-arm 115 is provided along the line so as to be movable by a driving device (not shown). This sub arm 11
5 has a pair of hands 115a, 115a.

The heat treatment units G3 'are arranged in the same manner as the arrangement of the processing units G3 to G5 in the first embodiment. In this case, the panel 40 on the back side of the processing station 12 in FIG. 1 is moved to the back side, and is arranged according to the size of the heat treatment unit G3 '.

Regarding the operation of the heat treatment unit G3 ', the shutter 76 is opened and the middle arm 7b (or the lower arm 7) of the first or second main wafer carrier A1 or A2 is opened.
c) moves in the Y direction to a position immediately above the temperature control device C1 ',
After the elevating pin 127 of the temperature control device C1 'is raised and the wafer W is mounted on the pin 127 at a position higher than the height of the sub arm 115, the middle arm 7b is returned to the original position and the shutter 76 is moved. close. At this time, the sub arm 115 is located on the low temperature heat treatment apparatus LH side so as not to hinder the operation of the main wafer carrier 16.
Then, the sub arm 115 located on the side of the low temperature heat treatment apparatus LH moves to the temperature control apparatus C1 '. Then, the wafer W is transferred to the sub-arm 115 while the elevating pins 127 are lowered with the wafer W placed thereon.

Then, the sub-arm 115 having received the wafer W moves to the back side in the X direction, and similarly, by driving the elevating pins, the low-temperature heat treatment apparatus LH as the next step, and the high-temperature heat treatment as the next step. A predetermined heating process is performed while being sequentially placed on the hot plates 111 and 112 of the apparatus HH.

When the predetermined heat treatment is completed by the high temperature heat treatment apparatus HH, the wafer W is moved by the sub arm 115 to the temperature control device C1 ', and the temperature control plate 122 is moved.
It is placed on the top and performs a predetermined temperature control process.

In the present embodiment, in particular, heat treatments at different temperatures, and furthermore, temperature control can be continuously performed, and the throughput can be improved.

The temperature control device C1 'and the low temperature heat treatment device
If the LH and the high-temperature heat treatment apparatus HH are appropriately separated by a shielding plate, the temperature control in each apparatus can be performed more precisely.

FIG. 30 shows a substrate processing apparatus according to a third embodiment of the present invention.
The second main wafer transfer section A2 in the first embodiment is modified, and a coating processing unit G2 'is additionally provided. The other configuration is the same as that of the first embodiment. . The processing unit G2 'has a resist coating unit (COT) and a developing unit (DEV).

Main wafer transfer section A1 according to the first embodiment
In (A2), the main wafer carrier 16 (17) itself did not move in the Y direction. However, the third main wafer carrier A3 according to the third embodiment can move in the Y direction. Is provided with a Y-axis pole 128. The Y-axis pole 128 is movable along the vertical pole 33, and the main wafer carrier 17 is mounted movably along the Y-axis pole.

Thus, after the substrates are processed in the fourth and fifth heat treatment units G4 and G5, the first and second heat treatment units G4 and G5 are processed.
The substrate that could not be processed by the processing unit sections G1 and G2 of the coating system is transferred to the processing unit G2 'by the third main wafer transfer section A3 by the main wafer transfer body 17 to perform predetermined coating processing. Can do it. This improves throughput.

Next, a fourth embodiment of the present invention will be described.

FIG. 31 is a plan view showing the structure of the substrate processing apparatus according to this embodiment, and FIG. 32 is a partial perspective view thereof.

As shown in these figures, a substrate processing apparatus 201 according to this embodiment differs from the above-described embodiment in the configuration of an interface unit 202. In the interface unit 202 according to this embodiment, two-stage first and second interface units 202 a and 20
2b is provided.

In the first interface unit 202a, the wafer carrier 204 is arranged so as to face the opening of the fifth heat treatment unit G5.

On the rear side of the wafer carrier 204, the peripheral exposure device WEE and the in-buffer cassette INB are sequentially arranged from the top so as to face the wafer carrier 204.
R and OUT buffer cassettes OUTBR are arranged in multiple stages. The IN buffer cassette INBR temporarily stores the wafer W carried into the exposure apparatus 203,
For example, about 25 such wafers W are accommodated. The out buffer cassette OUTBR temporarily stores the wafers W unloaded from the exposure apparatus 203, and stores, for example, about 25 such wafers W.

On the front side of the wafer carrier 204, a transfer unit TRS and a two-stage high-precision temperature control unit CPL are sequentially arranged from the top so as to face the wafer carrier 204.
Are arranged in multiple stages. The delivery unit TRS
Although illustration is omitted, for example, 3 for supporting the wafer W on a base
And a wafer carrier 204 in a first interface unit 202a and a wafer carrier 2 in a second interface unit 202b to be described later.
An opening is provided so as to allow access from both of them. The high-precision temperature control unit CPL has substantially the same configuration as that of the above-described embodiment, and is provided from both the wafer carrier 204 in the first interface unit 202a and the wafer carrier 206 in the second interface unit 202b described later. Openings are provided for access.

The wafer carrier 204 is configured to be movable in the Z direction and rotatable in the θ direction.
a is configured to be movable up and down respectively, and a transfer fork 204a of the
Opening of the heat treatment unit G5, the peripheral exposure device WE
E, access to the IN buffer cassette INBR, the OUT buffer cassette OUTBR, the transfer unit TRS, and each of the two-stage high-precision temperature control units CPL, and transfer the wafer W between these units using separate forks 204. Then, the wafer W is transferred.

The second interface unit 202b has:
A wafer carrier 206 that is movable in the Y and Z directions and rotatable in the θ direction is arranged. The wafer transfer body 206 includes a transfer unit TRS, a two-stage high-precision temperature control unit CP, which is provided with a transfer pin 206a that can move forward and backward.
L, the in-stage 203a and the out-stage 203b of the exposure apparatus 203 are accessed to transfer the wafer W to and from each of these parts, and to carry the wafer W.

Next, the operation of transporting wafer W in interface unit 202 thus configured will be described.

The wafer W carried in from the fifth heat treatment unit G5 is transferred to the wafer carrier 204 → in buffer cassette INBR → wafer carrier 204 → peripheral exposure device W
EE → wafer carrier 204 → high precision temperature control unit CPL
→ The wafer is transferred to the in-stage 203a of the exposure apparatus 203 via the wafer transfer body 206.

On the other hand, the wafer W carried out of the out stage 203b of the exposure apparatus 203 is transferred from the wafer carrier 206 to the transfer unit TRS to the wafer carrier 204.
→ Out buffer cassette OUTBR → Unloaded to fifth heat treatment unit G5 via wafer carrier 204.

According to this embodiment, in particular, the wafer transfer body 2
06 is reduced, the wafer W is immediately transferred from the out-stage 203b in response to a request from the exposure apparatus 203.
Can be carried out. Therefore, the exposure device 203
It is very unlikely that the wafer W, which has been requested to be unloaded on the side, is kept in the exposure apparatus 203. In addition, since the load on the wafer carrier 204 is reduced, the wafer W unloaded from the exposure device 203 can be
Can be delivered to the heat treatment unit G5 side. Therefore, according to the substrate processing apparatus 201 of the present embodiment, it is possible to form the line width more uniformly. Further, according to this embodiment, it is possible to secure a maintenance area 207 on the rear side of the second interface unit 202b where the operator can directly access the wafer transfer bodies 205 and 206.

The empty area 208 in front of the first interface unit 202a may be an area for disposing a tank or the like for storing a chemical solution required for the substrate processing apparatus 201.

A peripheral exposure device may be arranged above the transfer unit TRS and the two-stage high-precision temperature control unit CPL.

Note that the present invention is not limited to the embodiment described above.

In the above embodiment, three heat treatment system units (G3 to G5) and two main wafer transfer units (A
1, A2) and two coating unit units (G1, G2) are provided. For example, four heat treatment unit units, three main wafer transfer units, and three coating unit units are provided.
First, it may be expanded in the left-right direction in FIG. 1 while maintaining the arrangement. Further, it is possible to further increase the number as needed.

Further, a heat treatment unit G3 (G
4, G5), temperature control / transportation device C and heat treatment device H
And a shield plate 93 shown by a dashed line for suppressing mutual thermal interference between them, so that the shield plate 93 is slidably opened and closed when transported by the temperature control and transport device C. Is also good.

Further, the present invention can be applied not only to semiconductor wafers but also to, for example, glass substrates used in liquid crystal display devices.

[0214]

As described above, according to the present invention, the time required for the temperature control processing of the substrate can be substantially reduced, and the time required for the temperature control processing of the substrate has an effect on the reduction of the throughput. Can be reduced as much as possible.

[Brief description of the drawings]

FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a front view showing an overall configuration of the substrate processing apparatus.

FIG. 3 is a rear view showing the entire configuration of the substrate processing apparatus.

FIG. 4 is a sectional view of a main wafer transfer unit according to the first embodiment of the present invention.

FIG. 5 is a perspective view showing a main part of the main wafer transfer unit.

FIG. 6 is a side view of the main wafer transfer section.

FIG. 7 is a side view showing a drive mechanism of a main wafer carrier in the main wafer carrier.

FIG. 8 is a front view of the main wafer carrier.

FIG. 9 is a sectional view of the main wafer carrier.

10 is a sectional view taken along the line [10]-[10] in FIG.

FIG. 11 is a cross-sectional view of a pre-baking unit (PAB), a post-exposure baking unit (PEB), and a post-baking unit (POST) according to the first embodiment of the present invention.

FIG. 12 is a longitudinal sectional view of the heat treatment unit.

FIG. 13 is a schematic view showing a temperature control mechanism of a housing in the heat treatment unit.

FIG. 14 is a cross-sectional view of the high-precision temperature control unit (CPL) according to the first embodiment of the present invention.

FIG. 15 is a cross-sectional view of a high temperature heat treatment unit (BAKE) according to the first embodiment of the present invention.

FIG. 16 is a cross-sectional view of the transition unit (TRS) according to the first embodiment of the present invention.

FIG. 17 is a plan view showing a resist coating unit according to the first embodiment of the present invention.

FIG. 18 is a longitudinal sectional view of the same.

FIG. 19 is a plan view showing the developing unit according to the first embodiment of the present invention.

FIG. 20 is a longitudinal sectional view of the same.

FIG. 21 is a flowchart showing a series of operations of the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 22 is a diagram for explaining an operation of transferring a substrate in a heat treatment unit.

FIG. 23 is an operation diagram of the heat treatment unit.

FIG. 24 is a schematic front view showing a flow of clean air in the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 25 is a schematic side view showing the flow of the clean air.

FIG. 26 is a schematic side view showing the flow of the clean air.

FIG. 27 is a view for explaining a shutter opening / closing operation (part 1) according to the present invention.

FIG. 28 is a view for explaining a shutter opening / closing operation (part 1) according to the present invention.

FIG. 29 is a cross-sectional view of a heat treatment unit according to a second embodiment of the present invention.

FIG. 30 is a partial plan view of a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 31 is a plan view of a substrate processing apparatus according to a fourth embodiment of the present invention.

FIG. 32 is a perspective view of an interface unit in the substrate processing apparatus shown in FIG.

[Explanation of symbols]

 W: semiconductor wafers G1 to G5: first to fifth processing unit sections u: gap A1: first main wafer transfer section A2: second main wafer transfer section F: filter S: sensor C: temperature control and transfer Apparatus H ... Heat treatment apparatus LH ... Low temperature heat treatment apparatus HH ... High temperature heat treatment apparatus 1 ... Substrate processing apparatus 7a ... Upper arm 7b ... Middle arm 7c ... Lower arm 8 ... Control unit 9 ... Shielding plate 16 ... Main wafer carrier 17 ... Second main wafer carrier 36 Fan 38 Door 40 Panel 41 Enclosure 44 Surrounding member 58 Liquid supply device 75 Housing 75b Flow path 75c Opening 75a Opening 76 Shutter 84 Elevating Pin 93: shielding plate 115: sub arm 150: substrate processing apparatus

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 21/30 562 (72) Inventor Shigeaki Iida 3-6 Akasaka, Minato-ku, Tokyo TBS broadcasting center Tokyo Electron Limited (72) Inventor Yuji Matsuyama 5-36 Akasaka, Minato-ku, Tokyo TBS Release Center Tokyo Electron Limited (72) Inventor Yoichi 5-3-1 Akasaka, Minato-ku, Tokyo TBS Broadcasting Center Tokyo Electron Limited (72) Inventor Masataka Matsunaga 3-6-6 Akasaka, Minato-ku, Tokyo TBS Broadcasting Center Tokyo Electron Limited (72) Inventor Ryo Miyata 5-chome Akasaka, Minato-ku, Tokyo No. 3-6 TBS Broadcasting Center Tokyo Electron Limited F-term ) 5F031 CA02 CA05 DA17 FA01 FA11 FA12 FA15 GA37 GA44 GA49 GA50 HA33 LA07 LA13 MA02 MA03 MA06 MA09 MA24 MA26 MA33 NA03 NA09 NA16 PA30 5F046 AA28 CD01 CD05 CD10 KA04

Claims (68)

[Claims] 1. A main transfer section for transferring a substrate, a processing section for performing a thermal process on the substrate, and adjusting a temperature of the substrate to a predetermined temperature, and between the main transfer section and the processing section. A substrate processing apparatus, comprising: a temperature control / transport unit for transporting a substrate by using the temperature control / transport unit. 2. The substrate processing apparatus according to claim 1, surrounding the processing section and the temperature control / transport section, and transferring the substrate between the main transfer section and the temperature control / transport section. A substrate processing apparatus further comprising a housing having an opening for performing the operation. 3. A main transfer section for transferring a substrate, a first processing section for performing thermal processing on the substrate, a second processing section for performing thermal processing on the substrate, A temperature controller / conveyor for adjusting the temperature to a predetermined temperature, and for transporting the substrate between the main transporter, the first processing unit, and the second processing unit; A substrate processing apparatus, wherein a processing unit, the second processing unit, and the temperature control / transport unit are linearly arranged. 4. The substrate processing apparatus according to claim 3, surrounding the first processing section, the second processing section, and the temperature control / transport section, and the main transport section and the temperature control / transport section. A substrate processing apparatus further comprising a housing having an opening for transferring a substrate to and from a transport unit. 5. A temperature control unit for adjusting a temperature of a substrate to a predetermined temperature; a processing unit for performing thermal processing on the substrate; and a main transfer unit for transferring the substrate between at least the temperature control unit. A substrate processing apparatus, comprising: a sub-transport unit configured to transport a substrate between the temperature control unit and the processing unit. 6. The substrate processing apparatus according to claim 5, wherein the substrate processing unit surrounds the temperature control unit and the sub-transport unit, and transfers the substrate between the main transfer unit and the temperature control unit. A substrate processing apparatus further comprising a housing having an opening. 7. A temperature control section for adjusting a temperature of a substrate to a predetermined temperature, a first processing section for performing thermal processing on the substrate, and a second processing section for performing thermal processing on the substrate. A main transport unit that is arranged in a straight line, and further transfers a substrate at least to the temperature control unit; and between the temperature control unit, the first processing unit, and the second processing unit. And a sub-transporting section for transporting the substrate. 8. The substrate processing apparatus according to claim 7, wherein the first processing unit, the second processing unit, the temperature control unit, and the sub-transport unit are surrounded, and the main transfer unit and the sub-transport unit are surrounded. A substrate processing apparatus further comprising a housing having an opening for transferring the substrate to and from the temperature control unit. 9. A main transport section for transporting a substrate, a processing section for performing thermal processing on the substrate, adjusting the substrate to a predetermined temperature, and transporting the substrate between the processing sections. Transfer of the substrate between the temperature control and transfer unit and the main transfer unit which can be moved up and down and raised, and transfer the substrate between the temperature control and transfer unit in a lowered state A substrate processing apparatus comprising a plurality of lifting pins. 10. The substrate processing apparatus according to claim 9, wherein the processing unit, the temperature control / transport unit, and the lift pins are surrounded, and a substrate is transferred between the main transport unit and the lift pins. A substrate processing apparatus further comprising a housing having an opening for performing the operation. 11. A main transport section for transporting a substrate, a first processing section for performing thermal processing on the substrate, a second processing section for performing thermal processing on the substrate, and A temperature controller / transporter for adjusting the temperature to a predetermined value and transporting the substrate between the first processing unit and the second processing unit; And a plurality of elevating pins for transferring the substrate to and from the temperature control / transportation unit in a lowered state, wherein the first processing unit and the second processing unit The substrate processing apparatus, wherein the temperature control / transport unit and the lifting pins are linearly arranged. 12. The substrate processing apparatus according to claim 11, wherein the first processing section, the second processing section, the temperature control / transport section, and the elevating pins are surrounded, and the main transport section and The substrate processing apparatus further comprises a housing having an opening for transferring the substrate to and from the lifting pins. 13. The method of claim 2, 4, 6, 8, 10, or 12.
The substrate processing apparatus according to claim 1, further comprising a shutter mechanism for opening and closing the opening. 14. The substrate processing apparatus according to claim 1, further comprising a liquid supply unit for supplying a predetermined liquid to the substrate, wherein the main transport unit is provided. A substrate processing apparatus for transferring a substrate to and from the liquid supply unit. 15. The method of claim 2, 4, 6, 8, 10, or 12.
3. The substrate processing apparatus according to claim 1, wherein the housings are arranged in multiple stages in a vertical direction. 16. The substrate processing apparatus according to claim 14, wherein the liquid supply units are vertically arranged in multiple stages. 17. The substrate processing apparatus according to claim 15, wherein the main transport unit comprises: an arm for holding a substrate; an advance / retreat drive mechanism for driving the arm forward / backward; A substrate processing apparatus, comprising: a rotation drive mechanism for rotating the arm; and a vertical transport mechanism for integrally driving the arm, the advance / retreat drive mechanism, and the rotation drive mechanism in a vertical direction. 18. A processing unit having openings on both sides for transferring a substrate, the processing unit being disposed so as to face each opening of the processing unit, and being provided between the processing unit and the processing unit via the opening. A first and a second main transport unit for carrying in and out of the substrate, the processing unit comprising: a processing unit for performing a thermal process on the substrate; a substrate adjusted to a predetermined temperature; A substrate processing apparatus comprising: a temperature controller / transporter for transporting a substrate between the first and second main transport units via the unit and the processing unit. . 19. A processing unit having openings on both sides for transferring a substrate, the processing unit being disposed so as to face each opening of the processing unit, and being provided between the processing unit and the processing unit via the opening. A first processing unit for performing thermal processing on the substrate, and a first processing unit for performing thermal processing on the substrate. And a second processing unit, wherein the first processing unit and the second processing unit adjust the substrate to a predetermined temperature, and between the first and second main transfer units via the opening. And a temperature control and transfer unit for transferring a substrate between the first processing unit, the second processing unit, and the temperature control and transfer unit. Characteristic substrate processing equipment. 20. A processing unit having openings on both sides for transferring a substrate, the processing unit being disposed so as to face each opening of the processing unit, and a substrate interposed between the processing unit and the processing unit via the opening. A first and a second main transfer unit for carrying in and out of the substrate, wherein the processing unit transfers the substrate between the first and the second main transfer device through the opening, and A temperature control unit that adjusts the substrate to a predetermined temperature, a processing unit that performs thermal processing on the substrate, and a sub-transport unit that transports the substrate between the temperature control unit and the processing unit. A substrate processing apparatus comprising: 21. A processing unit having openings on both sides for transferring a substrate, the processing unit being disposed so as to face each opening of the processing unit, and being provided between the processing unit and the processing unit via the opening. A first and a second main transport unit for carrying in and out of the substrate, wherein the processing unit exchanges the substrate with the first and the second main transport unit via the opening, and A temperature control unit for adjusting a temperature of the substrate to a predetermined temperature; a first processing unit for performing thermal processing on the substrate; a second processing unit for performing thermal processing on the substrate; And a sub-transport unit for transporting the substrate between the first processing unit and the second processing unit, wherein the temperature control unit, the first processing unit, and the second processing unit A substrate processing apparatus which is arranged in a straight line. 22. A processing unit having openings on both sides for transferring a substrate, and a processing unit disposed to face each of the openings of the processing unit, and a substrate between the processing unit and the processing unit via the opening. A processing unit for performing thermal processing on a substrate, a processing unit for adjusting a temperature of the substrate to a predetermined temperature, and a processing unit for performing thermal processing on the substrate. A temperature control / transport unit for transporting a substrate between the first and second main transport units via the opening, which can be moved up and down and in an elevated state. And a plurality of raising / lowering pins for transferring the substrate to and from the temperature control / transportation unit in a lowered state. 23. A processing unit having openings on both sides for transferring a substrate, the processing unit being disposed so as to face each opening of the processing unit, and being provided between the processing unit and the processing unit via the opening. A first processing unit for performing thermal processing on the substrate, and a first processing unit for performing thermal processing on the substrate. A processing unit for adjusting the substrate to a predetermined temperature, and a temperature control and transfer unit for transferring the substrate between the first processing unit and the second processing unit; The transfer of the substrate is performed between the first and second main transfer units through the opening in the raised state, and the transfer of the substrate between the temperature control and transfer unit is performed in the lowered state. A plurality of elevating pins, wherein the first processing unit, the second processing unit, The substrate processing apparatus part and said lifting pin is characterized in that it is arranged in a straight line. 24. The substrate processing apparatus according to claim 18, wherein the processing units are vertically arranged in multiple stages. 25. The substrate processing apparatus according to claim 18, wherein the substrate processing apparatus is disposed at a position where the substrate can be transferred to and from the first or second transport unit. A substrate processing apparatus further comprising a liquid supply unit for supplying a predetermined liquid to the substrate. 26. The substrate processing apparatus according to claim 25, wherein the liquid supply units are arranged in multiple stages in a vertical direction. 27. The substrate processing apparatus according to claim 18, wherein the substrate processing apparatus is disposed at a position where the substrate can be transferred to and from the first or second main transfer unit. A substrate processing apparatus, further comprising an inspection unit for inspecting the substrate. 28. The substrate processing apparatus according to claim 27, wherein the inspection units are arranged in multiple stages in a vertical direction. 29. The substrate processing apparatus according to claim 27, wherein the inspection unit performs a micro inspection on the substrate. 30. The substrate processing apparatus according to claim 18, wherein the processing unit is further provided on a side of the first main transport unit opposite to a surface facing the processing unit. A substrate processing apparatus, which is disposed. 31. The substrate processing apparatus according to claim 18, wherein a processing is performed on a side of the processing unit opposite to a surface facing the first or second main transport unit. A substrate processing apparatus, further comprising a receiving portion for temporarily receiving and holding front and rear substrates. 32. The substrate processing apparatus according to claim 31, further comprising an inspection unit arranged in the receiving unit and inspecting the substrate. 33. The substrate processing apparatus according to claim 32, wherein the inspection unit performs a macro inspection on the substrate. 34. A main transport section for transporting the substrate, a processing unit disposed around the main transport section and performing at least thermal processing on the substrate, and disposed around the main transport section; A liquid supply unit for supplying a predetermined liquid onto the substrate, wherein the liquid supply unit has a more positive pressure than the processing unit and the main transport unit, and the main transport unit and the processing unit have substantially the same pressure. A substrate processing apparatus comprising: 35. The substrate processing apparatus according to claim 34, wherein the main transport unit, the processing unit, and the liquid supply unit are arranged in separate housings, and each of the housings transfers a substrate. The substrate processing apparatus further includes an opening for performing the following, and a passage connecting the adjacent openings between the respective housings is surrounded by a surrounding member. 36. The substrate processing apparatus according to claim 35, wherein a minute gap is provided between the surrounding member and at least one of the housings. 37. The substrate processing apparatus according to any one of claims 34 to 36, wherein the air pressure control unit controls the main transport unit, the processing unit, and the liquid supply unit with a gas. A gas supply unit that supplies gas, a gas exhaust unit that exhausts gas, and a pressure measurement unit that measures air pressure. The amount of gas supplied by the gas supply unit based on the measured pressure and the gas exhaustion A substrate processing apparatus for controlling at least one of an amount of gas exhausted by the unit. 38. The substrate processing apparatus according to claim 37, wherein the processing units are arranged in multiple stages in a vertical direction, and each processing unit includes the gas supply unit, the gas exhaust unit, and the air pressure measurement unit. A substrate processing apparatus comprising: 39. The substrate processing apparatus according to claim 35, wherein at least one of the housing of the main transport unit, the processing unit, and the liquid supply unit includes: An openable door used for internal maintenance is provided, and the air pressure control means controls the air pressure in the housing to be increased when the door is opened. 40. The substrate processing apparatus according to any one of claims 35 to 39, wherein the casing of the main transport unit, the processing unit, and the liquid supply unit is entirely surrounded. The device further includes an outer housing provided with an openable and closable panel used for internal maintenance, wherein the air pressure control unit controls to increase the air pressure in the outer housing when the panel is opened. Substrate processing equipment. 41. The substrate processing apparatus according to claim 39, wherein a gas supply unit that operates only when the door or the panel is opened is further provided in the housing or the external housing. A substrate processing apparatus. 42. A main transport unit for transporting a substrate, a liquid supply unit disposed around the main transport unit and supplying a predetermined liquid onto the substrate, and a liquid supply unit disposed around the main transport unit. A processing unit, and unit temperature control means for separately controlling the temperature or humidity of the main transport unit, the liquid supply unit, and the processing unit, and the processing unit is adjacent to the main transport unit. A temperature control unit that adjusts the substrate to a predetermined temperature, and a processing unit that is disposed so that the temperature control unit intervenes with respect to the main transport unit and performs thermal processing on the substrate. A substrate processing apparatus. 43. The substrate processing apparatus according to claim 42, wherein the processing unit is covered by a temperature control mechanism. 44. The substrate processing apparatus according to claim 42, wherein a heat shield plate that can be opened and closed is disposed between the temperature control unit and the processing unit. apparatus. 45. The substrate processing apparatus according to claim 42, wherein the processing units are arranged in multiple stages in a vertical direction, and the unit temperature control unit is configured to control each of the processing units. A substrate processing apparatus characterized in that temperature control or humidity control is separately performed for each. 46. The substrate processing apparatus according to claim 42, wherein the liquid supply units are arranged in multiple stages in the up-down direction, and the unit temperature control unit is configured to: A substrate processing apparatus wherein temperature control or humidity control is separately performed for each supply unit. 47. The substrate processing apparatus according to claim 42, further comprising: a liquid supply mechanism for supplying the liquid to the liquid supply unit; The substrate processing apparatus, wherein the temperature control means also controls the temperature or humidity of the liquid supply mechanism. 48. The substrate processing apparatus according to claim 47, wherein the liquid supply mechanism is disposed below the liquid supply unit. 49. The substrate processing apparatus according to claim 42, wherein the liquid supply unit includes a liquid supply mechanism for supplying the liquid to the liquid supply unit. A substrate processing apparatus, which can be substituted. 50. A processing unit group in which processing units having a processing unit for performing thermal processing on a substrate and a temperature control unit for adjusting the substrate to a predetermined temperature are arranged in multiple stages in the vertical direction; A first main transport unit of a vertical transport type, which is disposed on one side of the group and is accessible to each of the processing units; and is disposed around the first main transport unit, and a predetermined liquid is placed on the substrate. A first liquid supply unit to be supplied, and a second main transfer, which is disposed on the other side of the processing unit group and is vertically transferable and can be moved in a predetermined plane direction, and is accessible to each of the processing units. A substrate processing apparatus comprising: an apparatus; and a plurality of second liquid supply units that are arranged along a plane moving direction of the second main transfer apparatus and that supply a predetermined liquid onto a substrate. 51. The substrate processing apparatus according to claim 50, wherein the first and second liquid supply units are vertically arranged in multiple stages. 52. A substrate transport device for transporting a substrate, and processing units disposed on both sides and a front surface of the substrate transport device, wherein at least one of the processing units is vertically arranged in multiple stages, and The transfer device is a vertical transfer type that can transfer a substrate to each unit, and is attached to the processing unit side where a support member that supports the substrate transfer device in the vertical direction is disposed on the front surface. A substrate processing apparatus. 53. A first processing unit having first and second openings on both sides for transferring a substrate, and a first processing unit disposed to face each opening of the first processing unit, A first and a second transfer device for loading and unloading a substrate from and to the first processing unit through an opening; a first and a second shutter member for opening and closing each of the openings; Means for controlling opening and closing of each of the shutter members so that the second opening is closed when the first opening is open. 54. The substrate processing apparatus according to claim 53, wherein the first processing unit includes: a thermal processing unit configured to perform thermal processing on the substrate; and a temperature control unit configured to adjust the substrate to a predetermined temperature. A substrate processing apparatus, comprising: 55. The substrate processing apparatus according to claim 53, wherein the first and second transfer devices are surrounded by a surrounding member and substantially shielded from the outside. Substrate processing apparatus. 56. A transfer device for transferring a substrate, and a first opening and a second opening for transferring a substrate between the transfer device and the transfer device. First and second processing units, first and second shutter members that open and close the respective openings, and the second opening is closed when the first opening is open. Means for controlling opening and closing of each shutter member. 57. The substrate processing apparatus according to claim 56, wherein the first processing unit is a unit for controlling or heating the temperature of the substrate, and the second processing unit is configured to apply a predetermined liquid to the substrate. A substrate processing apparatus for supplying the substrate. 58. The substrate processing apparatus according to claim 56, wherein the first and second transfer devices are surrounded by a surrounding member and substantially shielded from the outside. Substrate processing apparatus. 59. A transfer device for transferring a substrate, and a first opening and a second opening for transferring a substrate between the transfer device and the transfer device. First and second processing units, first and second shutter members that open and close the respective openings, and the second opening is closed when the first opening is open. Means for controlling opening and closing of each shutter member. 60. A main transfer device for transferring a substrate, the main transfer device being arranged adjacent to a front side of the main transfer device, for transferring the substrate between the main transfer device and a predetermined transfer with respect to the substrate. A first processing unit that supplies a liquid, and a first processing unit that is disposed adjacent to one side of the main transport device,
While transferring the substrate to and from the main transfer device,
A second processing unit having a temperature control unit that adjusts the substrate to a predetermined temperature and a heating unit that performs a heating process on the substrate, wherein the temperature control unit of the second processing unit includes the main transfer device and The substrate processing apparatus is arranged so as to be adjacent, and the heating section is arranged so as to be adjacent to the temperature control section and protrude to the rear side of the main transfer device. 61. A processing unit for performing at least a resist coating process and a developing process on a substrate; and a processing unit disposed between the processing unit and the exposure device, for transferring the substrate between the processing unit and the exposure device. A first interface unit disposed adjacent to the processing unit, and a second interface unit disposed between the first interface unit and the exposure apparatus. The first interface unit includes the processing unit and the second
For transferring the board to and from the interface unit
Wherein the second interface unit includes a second transfer unit for transferring a substrate between the first interface unit and the exposure apparatus. . 62. The substrate processing apparatus according to claim 61, wherein the first interface unit is transferred to a first holding unit that temporarily holds a substrate transferred to the processing unit, and to the exposure apparatus. A second holding unit that temporarily holds the substrate, wherein the first transport unit has a relay unit that once holds the substrate passed between the first interface unit and the second interface unit; And a carrier for transporting the substrate by accessing the processing unit, the first and second holding units, and the relay unit. 63. The substrate processing apparatus according to claim 62, wherein the first and second holding units are vertically arranged, the relay units are vertically arranged in multiple stages, and the carrier is vertically movable; A substrate processing apparatus characterized by being rotatable. 64. The substrate processing apparatus according to claim 63, wherein the plurality of relay units include a relay unit having a function of controlling the temperature of the substrate. 65. A step of subjecting the substrate to thermal processing in a processing unit, and a main transport for transporting the substrate while adjusting the temperature of the thermally processed substrate to a predetermined temperature by a temperature control / transport unit. And a step of transferring to a unit. 66. The substrate processing method according to claim 65, wherein the substrate is transferred from the main transport unit to the temperature control / transport unit, and the substrate is adjusted to a predetermined temperature by the temperature control / transport unit. Transporting the substrate to the processing unit. 67. A step of transferring a substrate from a main transport section for transporting the substrate to a temperature control / transport section, and adjusting the substrate to a predetermined temperature by the temperature control / transport section, A substrate processing method, comprising: a step of transporting; and a step of thermally treating the transported substrate in a processing unit. 68. The substrate processing method according to any one of claims 65 to 67, wherein the substrate is transferred to and from the main transfer unit in a state in which the substrate can be moved up and down and moved up. In the state, via a plurality of elevating pins for transferring the substrate between the temperature control and the transport unit,
A substrate processing method, further comprising a step of transferring a substrate between the main transport unit and the temperature control / transport unit.