JP3857655B2 - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and method for treating substrate by which the influence of the cooling time of substrates upon the fall of the throughput can be reduced to the utmost. <P>SOLUTION: Around first and second main wafer transporting sections A1 and A2, 10-stage heat treatment unit sections G3-G5 and 5-stage coating unit sections G1 and G2 are disposed. In the heat treatment unit sections G3-G5, the influence of the time required for cooling substrates upon the fall of the throughput can be reduced to the utmost by transporting wafers W while adjusting the temperatures of the wafers W by means of temperature controllers/ transporters C. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a substrate processing apparatus such as a coating and developing processing apparatus for applying a resist solution onto a semiconductor wafer and developing the resist solution.
[0002]
[Prior art]
For example, in a photoresist processing step in the manufacture of a semiconductor device, a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”) is exposed to a pattern, is then subjected to a temperature adjustment process after the heat treatment, and is then developed. . For such a series of processes, a coating and developing apparatus has been conventionally used.
[0003]
In this coating and developing apparatus, a series of processes necessary for coating and developing a wafer, for example, a resist coating process for applying a resist solution, a heating process for heating the wafer after the exposure process, and a wafer after the heating process are performed. There are provided various processing apparatuses for individually performing temperature adjustment processing for temperature adjustment and development processing for performing development processing on the wafer after the temperature adjustment processing is completed. Then, loading / unloading of wafers to / from each processing apparatus and transfer of wafers between the processing apparatuses are performed by a main transfer apparatus.
[0004]
By the way, only the transfer with respect to each part by such a main transfer apparatus increases the burden on the main transfer apparatus, which may cause a reduction in the throughput of the entire apparatus.
[0005]
Therefore, for example, in JP-A-8-162514, a processing unit group is configured by a predetermined processing unit among processing units for performing continuous process processing, and each processing unit group is provided with a substrate delivery position. The sub-transport robot transports the substrate between the substrate delivery position and the processing unit constituting the processing unit group, while the processing unit other than the processing unit constituting the processing unit group, and the substrate delivery position of the processing unit group, A technique in which a main transfer robot transfers a substrate between the two is disclosed. As a result, the burden on the transfer device can be reduced and the throughput can be improved.
[0006]
For example, the temperature adjustment process is performed between the exposure process and the development process after the heat process, but the time required for the temperature adjustment process tends to be long and the throughput tends to be reduced. According to the above, in order to transport the substrate between the processing unit that performs the heating process and the processing unit that performs the temperature adjustment process by the sub-transport robot that reduces the burden, the time from the end of the heating process to the start of the development process is shortened. In addition, it is possible to reduce the influence of the time required for the temperature adjustment process on the decrease in throughput.
[0007]
[Problems to be solved by the invention]
However, in the technique disclosed in the above publication, the actual time required for the temperature adjustment process is not different from the conventional one, and there is a limit to reducing the influence of the time required for the temperature adjustment process on the throughput reduction. .
[0008]
In the technique disclosed in the above publication, the substrate is carried into the processing unit that performs the heat treatment or the processing unit that performs the temperature adjustment process via the sub-transport robot. There is a problem that the thermal history of the substrate before the conditioning process varies and processing at a precise temperature cannot be performed. In particular, recently, there is a tendency to make the heating plate and temperature control plate thinner and respond quickly to temperature changes. In such a case, if a substrate with a variation in thermal history is introduced, the temperature of the heating plate or temperature control plate is increased. As a result, it is difficult to process the substrate at a precise temperature.
[0009]
  The present invention has been made in view of the above points, and an object of the present invention is to provide a substrate processing apparatus that can substantially reduce the time required for temperature control processing of a substrate.
[0010]
  Another object of the present invention is to provide a substrate processing apparatus capable of performing thermal processing and temperature control processing of a substrate more precisely.
[0011]
[Means for Solving the Problems]
  In order to achieve the above object, the present invention provides a main transport unit for transporting a substrate, a processing unit disposed around the main transport unit and performing thermal processing on at least the substrate, and the main transport unit. And a liquid supply unit that supplies a predetermined liquid onto the substrate, and the main transport unit, the processing unit, and the liquid supply unit are disposed in separate housings, respectively. The body has an opening for transferring the substrate, and a passage connecting the adjacent openings between the housings is surrounded by a surrounding member, and the surrounding member and at least one of the housings A substrate processing apparatus is provided in which a minute gap is provided between the two.
[0012]
  The substrate processing apparatus includes an atmospheric pressure control unit configured to control the liquid supply unit so that the pressure is higher than the processing unit and the main transfer unit, and the main transfer unit and the processing unit have substantially the same pressure. , May be further provided.
[0013]
  The atmospheric pressure control means includes a gas supply unit that supplies gas to the main transfer unit, the processing unit, and the liquid supply unit, a gas exhaust unit that exhausts gas, and an atmospheric pressure measurement unit that measures atmospheric pressure, And controlling at least one of the amount of gas supplied by the gas supply unit and the amount of gas exhausted by the gas exhaust unit based on the measured atmospheric pressure.
[0014]
  The processing units may be arranged in multiple stages in the vertical direction, and may include the gas supply unit, the gas exhaust unit, and the atmospheric pressure measurement unit for each processing unit.
[0015]
  At least one of the main transport unit, the processing unit, and the housing of the liquid supply unit is provided with an openable / closable door used for internal maintenance, and the atmospheric pressure control means is configured such that when the door is opened, You may make it control so that the atmospheric | air pressure in a housing | casing may be raised.
[0016]
  The casing further includes an outer casing that surrounds the casings of the main transport unit, the processing unit, and the liquid supply unit, and is provided with an openable / closable panel that is used for internal maintenance. When the panel is opened, control may be performed so as to increase the air pressure in the outer casing.
[0017]
  A gas supply unit that operates only when the door or the panel is opened may be further provided in the casing or the outer casing.
[0085]
In the present invention, the liquid supply unit is controlled such that the pressure is higher than that of the processing unit and the main transport unit, and the main transport unit and the processing unit have substantially the same pressure. Particles or the like do not flow into the unit, and defects due to particles or the like in the liquid supply unit can be reduced.
[0086]
In particular, the main transport unit, the processing unit, and the liquid supply unit are arranged in separate housings, and each housing has an opening for transferring a substrate, and each housing The pressure management can be performed efficiently and precisely by configuring the passage connecting between the adjacent opening portions so as to be surrounded by the surrounding member.
[0087]
In particular, since a minute gap is provided between the surrounding member and at least one of the housings, the unit can be installed efficiently.
[0088]
In addition, the atmospheric pressure control means includes a gas supply unit that supplies gas, a gas exhaust unit that exhausts gas, and an atmospheric pressure measurement that measures atmospheric pressure, with respect to the main transfer unit, the processing unit, and the liquid supply unit, respectively. Each of which is configured to control at least one of the amount of gas supplied by the gas supply unit and the amount of gas exhausted by the gas exhaust unit based on the measured atmospheric pressure, Precise pressure management can be performed for each unit.
[0089]
In the present invention, at least one of the casings of the main transport unit, the processing unit, and the liquid supply unit is provided with an openable / closable door used for internal maintenance, and the atmospheric pressure control means opens the door. When the control unit is configured to control the air pressure in the housing to be increased, the housing of the main transport unit, the processing unit, and the liquid supply unit is entirely enclosed, and internal maintenance is performed. And further comprising an outer casing provided with an openable / closable panel to be used, wherein the air pressure control means is configured to control so as to increase the air pressure in the outer casing when the panel is opened. In this case, particles and the like can be prevented from flowing into the apparatus.
[0098]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0099]
FIGS. 1 to 3 are views showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG.
[0100]
The substrate processing apparatus 1 carries a plurality of semiconductor wafers W as wafers to be processed in a wafer cassette CR, for example, 25 units, from the outside to the system or unloads them from the system, or carries a semiconductor wafer W into the wafer cassette CR. A cassette station 10 serving as a receiving unit for carrying out, and various single-wafer processing units for performing predetermined processing on the semiconductor wafer W one by one in the coating and developing process are arranged in multiple stages at predetermined positions. It has a configuration in which a processing station 12 and an interface unit 14 for transferring the semiconductor wafer W between the processing station 12 and an exposure apparatus (not shown) provided adjacent to the processing station 12 are integrally connected.
[0101]
In the cassette station 10, as shown in FIG. 1, a plurality of, for example, five wafer cassettes CR are placed in a row in the X direction at the position of the protrusion 20a on the cassette mounting table 20 with the respective wafer entrances facing the processing station 12 side. The wafer transfer body 22 which is placed and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. ing. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction so that it can also access a heat treatment system unit belonging to a third processing unit portion G3 having a multi-stage structure, which will be described later, as shown in FIG. It has become.
[0102]
As shown in FIG. 1, the processing station 12 includes a third processing unit G3, a fourth processing unit G4, and a fifth processing unit G5 from the cassette station 10 side on the rear side of the apparatus (upper side in the drawing). A first main wafer transfer section A1 as a first main transfer section is provided between the third processing unit section G3 and the fourth processing unit section G4. As will be described later, the first main wafer transfer unit A1 includes a first processing unit unit G1, a third processing unit unit G3, a fourth processing unit unit G4, and the like. It is installed so that it can be selectively accessed. Further, a second main wafer transfer unit A2 as a second main transfer unit is provided between the fourth processing unit G4 and the fifth processing unit G5, and the second main wafer transfer unit A2 is provided. The second main wafer transfer body 17 is installed so that it can selectively access the second processing unit part G2, the fourth processing unit part G4, the fifth processing unit part G5, and the like.
[0103]
Further, a heat treatment unit is installed on the back side of the first main wafer transfer unit A1, for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W, a heating unit (for heating the wafer W) ( HP) 113 is stacked in two steps from the bottom as shown in FIG. The adhesion unit (AD) may further include a mechanism for adjusting the temperature of the wafer W. On the back side of the second main wafer transfer unit A2, a peripheral exposure device (WEE) 120 that selectively exposes only the edge portion of the wafer W and an inspection unit that inspects the resist film thickness applied to the wafer W are provided. An inspection device 119 is provided. These peripheral exposure apparatus (WEE) 120 and inspection apparatus 119 may be arranged in multiple stages. In addition, a heat treatment unit may be arranged on the back side of the second main wafer transfer unit A2 similarly to the back side of the first main wafer transfer unit A1.
[0104]
As shown in FIG. 3, in the third processing unit G3, an oven-type processing unit that performs a predetermined process by placing the wafer W on a mounting table, for example, a first heat treatment unit that performs a predetermined heat treatment on the wafer W. A high-temperature heat treatment unit (BAKE), a high-precision temperature control unit (CPL) that heat-treats the wafer W with high-precision temperature control, and a transfer part of the wafer W from the wafer carrier 22 to the main wafer carrier 16 The transition unit (TRS) and the temperature control unit (TCP) which become the above are stacked in, for example, 10 stages in order from the top. In the third processing unit G3, in the present embodiment, the third stage from the bottom is provided as a spare space. Even in the fourth processing unit G4, for example, a post-baking unit (POST) as a fourth heat treatment unit, a pre-baking unit (PAB) which is a second heat treatment unit for performing heat treatment on the wafer W after resist application, high accuracy The temperature control units (CPL) are stacked in, for example, 10 stages in order from the top. Further, in the fifth processing unit G5, for example, a post-exposure baking unit (PEB) and a high-precision temperature control unit (CPL) are provided in, for example, 10 stages from the top as the third heat treatment unit for performing heat treatment on the exposed wafer W. It is superimposed on.
[0105]
In FIG. 1, a first processing unit part G1 and a second processing unit part G2 are provided side by side in the Y direction on the apparatus front side of the processing station 12 (downward in the figure). Between the first processing unit G1 and the cassette station 10 and between the second processing unit G2 and the interface unit 14, the temperature of the processing liquid supplied to the processing units G1 and G2 is controlled. Liquid temperature control pumps 24 and 25 to be used are respectively provided, and further, clean air from an air conditioner (not shown) provided outside the processing system is supplied to the inside of the processing units G1 to G5. Ducts 31 and 32 are provided.
[0106]
As shown in FIG. 2, in the first processing unit G1, five spinner type processing units, for example, resist coatings, are provided as liquid supply units for performing predetermined processing by placing a semiconductor wafer W on a spin chuck in a cup CP. The unit (COT) has three stages, and the bottom coating unit (BARC) for forming an antireflection film to prevent light reflection at the time of exposure is stacked in two stages, and five stages in order from the bottom. Similarly, in the second processing unit section G2, five spinner type processing units, for example, development units (DEV) are stacked in five stages in order from the bottom. In the resist coating unit (COT), the drainage of the resist solution is troublesome both in terms of mechanism and maintenance, and thus is preferably arranged in the lower stage. However, it can be arranged in the upper stage as required.
[0107]
The first to fifth processing units G1 to G5, the adhesion unit 110, the heating unit (HP) 113, the exposure processing device (WEE) 120, and the inspection device 119 can be removed for each maintenance. Further, a panel 40 (FIG. 1) on the back side of the processing station 12 is also attached so as to be removable or openable.
[0108]
In addition, chemical chambers (CHM) 26 and 27 serving as liquid supply mechanisms for supplying the above-described predetermined processing liquids to the processing unit parts G1 and G2 are provided at the lowermost stages of the first and second processing unit parts G1 and G2. Are provided.
[0109]
A central control unit 8 that controls the entire system of the substrate processing apparatus 1 is provided below the cassette station 10.
[0110]
A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front surface of the interface section 14, and a wafer transfer body 27 is provided in the center. The wafer transfer body 27 moves in the X and Z directions to access both cassettes CR and BR. Further, the wafer transfer body 27 is configured to be rotatable in the θ direction so that it can also access the fifth processing unit G5. Furthermore, as shown in FIG. 3, a plurality of high-precision temperature control units (CPL) are provided on the back surface of the interface unit 14, for example, two stages in the vertical direction. The wafer transfer body 27 can also access this temperature control unit (CPL).
[0111]
Next, the configuration of the first main wafer transfer unit A1 as the main transfer unit will be described with reference to FIGS. Since the second main wafer transfer unit A2 is the same as the first main wafer transfer unit A1, the description thereof is omitted.
[0112]
In FIG. 4, the main wafer transfer unit A1 is surrounded by a casing 41 and a door 38 attached to the back side of the casing 41 so as to be openable and closable. The illustration of the door 38 is omitted. A window 38a is formed in the door 38 so as to allow access to the adhesion unit (AD) 110, and in the case of the second main wafer transfer portion A2, the peripheral exposure apparatus 120 and the inspection apparatus 119 can be accessed. Yes. Windows 41b and 41a are respectively provided on the front surface and the side surface so that the housing 41 can also be accessed from the outside. Five front windows 41b are provided (FIG. 5) for delivering the wafer W to and from the first processing unit G1 arranged in five stages, while the side windows 41a are provided. As shown in FIG. 6, ten wafers W are provided to transfer the wafers W to and from the third and fourth processing unit portions G4 arranged in ten stages. It can be increased or decreased as needed. Further, on both side surfaces of the casing 41, surrounding members 44 that connect the third and fourth processing unit parts G3 and G4 have a small gap u with respect to the processing unit parts G3 and G4. Each is attached. The gap u is a distance that can suppress the generation and intrusion of particles, and is, for example, 0.5 mm. The processing unit portions G3 and G4 of the surrounding member 44 have shock absorbing packings 30 respectively, and corresponding windows 30a are also formed in the packing 30 as shown in FIG. In addition, partition plates 34 are provided so as to partition each window 30a in the surrounding member.
[0113]
Further, in FIG. 4, the surrounding member 44 having the same configuration as that of the surrounding member 44 is also provided in a portion corresponding to the five openings 97 provided in the casing 41 ′ on the first and second processing unit portions G <b> 1 and G <b> 2 side. 'Is attached to the main wafer transfer portion A1 (A2) with a small gap u (for example, 0.5 mm).
[0114]
For example, four fans 36 for controlling the pressure and temperature / humidity inside the first main wafer transfer unit A1 are provided at the bottom of the first main wafer transfer unit A1. The operation of these fans 36 is controlled by the central control unit 8 (FIG. 2).
[0115]
As shown in FIGS. 4 and 5, a vertical pole 33 is installed on the first and second processing unit parts G <b> 1 and G <b> 2 side in the housing 44, and inside one of the poles 33, As shown in FIG. 7, a pair of pulleys 51 and 52 are attached to the upper end portion and the lower end portion, and an endless belt 49 serving as a vertical driving means is stretched between the pulleys 51 and 52. A support 45 of the first main wafer transfer body 16 is connected to the vertical drive belt 49 via a belt clamp 47. 4 and 5, the support portion 45 is provided with a flange portion 45a. The flange portion 45a is slidably engaged with sleeves 33a formed on both poles 33, respectively. . The lower pulley 52 is connected to the rotation shaft Ma of the drive motor M fixedly arranged at the bottom of the pole 33, and constitutes a drive pulley. By such a vertical belt driving mechanism and a vertical sliding mechanism, the main wafer transfer body 16 can be moved up and down in the vertical direction by the driving force of the driving motor M.
[0116]
The lifting mechanism described above is similarly installed on the other pole 33, but the drive motor M may not be provided on the other pole 33.
[0117]
The main wafer transfer body 16 has a motor 50 built in the support portion 45, and a rotating rod 46 rotatable in the θ direction (FIG. 5) is connected to the motor 50. The arm base end 55 which is the base end of the three arms 7a, 7b and 7c is fixed.
[0118]
FIG. 8 is a view of the main wafer transfer body 16 as seen from the front side in the state of FIG. Vertical members 95 are attached to both sides of the distal end portion of the arm base end portion 55, and a shielding plate 9 that blocks radiant heat from both arms is attached to the vertical members 95 between the upper arm 7a and the middle arm 7b. Further, an attachment member 96 that extends between these vertical members 95 is attached. A pair of optical sensors 94 is provided at the center of the mounting member 96 and at the tip of the arm base end portion 55, whereby the presence or absence of the wafer W on each arm and the protrusion of the wafer W are confirmed.
[0119]
9 is a cross-sectional view showing the configuration of the base end portion 55 of the main wafer transfer body 16, and FIG. 10 is a cross-sectional view taken along line [10]-[10] in FIG. Arm support plates 54 are fixed to the arm base ends of the arms 7a to 7c, respectively. These arm support plates 54 are formed in an L-shaped cross section, and each arm support plate 54 has an arm carriage 56 that is movable in the arm longitudinal direction along a rail 61 laid on the base 55a of the base end portion 55. Are fixedly attached.
[0120]
Under each arm carriage 56, a guide 62 slidably engaged with each rail 61 is provided. Further, the inner side surface of each arm carriage 56 is provided in the vicinity of the pulley 63 and the arm forward end position (the distal end portion 55c of the base 55) respectively disposed near the arm original position (the base end portion 55b of the base 55). The belts 66 are respectively fixed to the drive belts 65 spanned between the pulleys 64. The pulleys 63 are coaxially coupled to pulleys 68 via bearings 67, respectively, and the pulleys 68 are coupled to pulleys 70 via drive belts 69, respectively. The pulleys 70 are respectively connected to the rotation shaft of the drive motor 60. It is fixed.
[0121]
When the rotation shaft of each motor 60 rotates, each pulley 63 rotates via each pulley 70, each drive belt 69, and each pulley 68, and each drive belt 65 is driven by the rotation drive of each pulley 63, and each drive belt. Each arm carriage 56 moves along the rail 61 along with the rail 65, and the moving direction is determined by the rotation direction of each motor 60. Of course, each of these motors is independently driven, and each arm 7a-7b is movable independently.
[0122]
With the configuration of the main wafer transfer body 16 as described above, the arms 7a to 7b can be rotated in the θ direction and can be moved in the X, Y, and Z directions, and as described above, the processing unit units G1, G3, and G4. Can be accessed.
[0123]
Next, referring to FIG. 11 to FIG. 13, the pre-baking unit (PAB), the post-exposure baking unit (PEB), the post of the 10 stages belonging to the fourth processing unit G4 and the fifth processing unit G5. The baking unit (POST) will be described. Each of these baking units only differs in processing temperature.
[0124]
As shown in FIG. 11, such a heat treatment unit has a heat treatment device H on the front side of the system and a temperature control / conveyance device C on the back side in the housing 75. The heat treatment apparatus H is provided with a hot plate 86 that is heated by a heating wire 86b through a suitable heat insulating material in a cylindrical support 88. Below the support 88, three pins 85 for transferring the wafer W are installed so as to be moved up and down by the driving device 82, and these three pins 85 are through holes 86 a formed in the hot plate 86. It is buried and buried.
[0125]
On the other hand, the temperature control / conveyance device C is provided with sliders 79a and 79b movable along, for example, two guide rails 77 disposed along the X direction, and are attached to the sliders 79a and 79b, respectively. The temperature control / conveyance plate 71 is fixed via the connecting members 78, 78. Below the temperature control / conveying plate 71, lifting pins 84 for transferring the wafer W are installed so as to be lifted and lowered by a driving device. The temperature control / conveyance plate 71 is formed with a notch 71a so that the elevating pins 84 buried therebelow can be raised. As this temperature control mechanism, for example, cooling water or the like is used to adjust the temperature of the wafer W to a predetermined temperature, for example, 40 ° C., and temperature control is performed. One slider 79a is provided with a drive device (not shown), for example, a drive device using air or a motor, and the other slider 79b is provided with a sensor (not shown) for recognizing the operation position.
[0126]
An air flow path 75c for air pressure control, which will be described later, is formed on the front side of the housing 75 (left side in the figure). Communicating with Further, although not shown, the flow path 75c communicates in the vertical direction (Z direction) from the uppermost stage to the lowermost stage. Fans 87b are also installed on both side surfaces of the housing 75 on the heat treatment apparatus H side to form an exhaust port 75d, which is similarly connected from the uppermost stage to the lowermost stage.
[0127]
Further, for example, with respect to the fourth processing unit G4, the wafer W is transferred to and from the first main wafer transfer unit A1 on one side surface portion of the casing 75 on the temperature control / transfer apparatus C side. Therefore, an opening 75a is provided, and an opening 75b is provided on the other side surface so as to face the window 41a of the second main wafer transfer part A2. These opening portions 75a and 75b are provided with shutters 76a and 76b that can be opened and closed, respectively. The shutters 76 a and 76 b are opened and closed by a driving unit (not shown) under the central control unit 8.
[0128]
FIG. 13 is a side sectional view of the entire fourth processing unit part G4 (fifth processing unit part G5). As shown in the figure on both side portions on the heat treatment apparatus H side, the fourth processing unit part G4 ( Fifth processing unit part G5) In order to suppress heat diffusion to the outside and suppress an increase in the temperature of the atmosphere in the apparatus, a temperature control pipe 90 for circulating cooling water is provided from the uppermost stage to the lowermost stage, not shown. Is connected to a pump provided at a lower portion of the processing unit G4 (G5).
[0129]
Next, with reference to FIG. 14, the highly accurate temperature control unit (CPL) which belongs to all the units of the heat processing system (3rd-5th process unit part G3-G5) is demonstrated. About this, since the temperature control / conveyance device C in the above-described pre-baking unit (PAB) or the like is replaced with the high-precision temperature control device C2 and there is no heat treatment device H, the pre-baking unit (PAB) or the like The same reference numerals are given to the same components as in FIG.
[0130]
In the high-precision temperature control device C2, a high-precision temperature control plate 133 is provided in a cylindrical support 131. Although not shown in the figure, this high-precision temperature control plate 133 uses a Peltier element, for example, and adjusts the temperature of the wafer W to a predetermined temperature, for example, 23 ° C. by feedback control so that precise temperature control can be performed. Below the support 133, three elevating pins 85 for delivering the wafer W are installed so as to be elevable by the driving device 82, and these elevating pins 85 pass through the high-precision temperature control plate 133. It is buried in the hole 133a.
[0131]
Next, with reference to FIG. 15, the structure of the high temperature heat treatment unit (BAKE) belonging to the third processing unit part G3 will be described. Note that the same components as those in the pre-baking unit (PAB) and the like are denoted by the same reference numerals, and description thereof is omitted.
[0132]
A temperature control device C1 is disposed on the front side of the system in the housing 75, and the temperature control device C1 is provided with a temperature control plate 163 in a cylindrical support 161. The temperature control of the temperature control plate 163 is performed using, for example, cooling water as in the pre-baking unit (PAB). On the other hand, a thermal high-temperature heat treatment apparatus HH that performs heat treatment at a higher temperature than the heat treatment apparatus H in a pre-baking unit (PAB) or the like is disposed on the back side. As in the heat treatment apparatus H, the high temperature heat treatment apparatus HH has a cylindrical support member 88 provided with a high temperature hot plate 112 via a suitable heat insulating material. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be moved up and down by the driving device 82, and the three pins 85 penetrate through each hot plate 112. It is buried in the hole 112a.
[0133]
The distance between the temperature control device C1 and the high temperature heat treatment device HH is set larger than the distance between the temperature control / conveyance device C and the heat treatment device H in a pre-baking unit (PAB) or the like. This is to prevent the influence of the heat treatment due to the high temperature of the temperature heat treatment apparatus HH from adversely affecting the temperature adjustment process of the temperature adjustment apparatus C1.
[0134]
A guide rail 118 extends in the X direction on the side of the temperature control device C and the high temperature heat treatment device HH, and the wafer W is moved along the guide rail 118 so as to be movable by a driving device (not shown). A sub arm 115 is provided as a sub transport unit for transport. The sub arm 115 has a pair of hands 115a and 115a.
[0135]
Although the detailed configuration of the temperature control unit (TCP) belonging to the lower two stages of the fourth and fifth processing units G4 and G5 is not shown, it has the same configuration as the above-described high-precision temperature control unit (CPL). The temperature control mechanism of the temperature control unit (TCP) is controlled by using cooling water, a Peltier element, or the like. For example, the number of Peltier elements in this case is smaller than the number of Peltier elements of the high-precision temperature control plate 133.
[0136]
FIG. 16 shows a transition unit (TRS) belonging to the third processing unit section G3. Unlike other heat treatment units, this does not have a heat treatment system device (for example, temperature control device C1), and has only a lift pin 85 and a drive device that drives it up and down. Other components in the transition unit (TRS) are the same as those of the high-precision temperature control unit (CPL) and the like. The spare space belonging to the above-described third processing unit G3 is not shown, but as with the transition unit (TRS), the lift pins and the lift pins are moved up and down for the transfer of the wafer W to other processing units. There is only a driving device to drive.
[0137]
Note that the heat treatment apparatus H and HH shown in FIGS. 11 to 16 are not shown on the hot plates 86 and 112 but can be freely opened and closed when the wafer W is subjected to the heat treatment. A chamber cover is provided.
[0138]
Next, the configuration of the resist coating unit (COT) shown in FIGS. 17 and 18 will be described.
[0139]
In this unit, a fan / filter unit F for air control, which will be described later, is attached above the casing 41 ′, and in the lower part, near the center of the unit bottom plate 151 smaller than the width in the Y direction of the casing 41 ′. An annular cup CP is disposed, and a spin chuck 142 is disposed inside thereof. The spin chuck 142 is configured to rotate by the rotational driving force of the drive motor 143 while the wafer W is fixedly held by vacuum suction. In the cup CP, pins 148 for transferring the wafer W are provided so as to be moved up and down by a driving device 147, and a drain port 145 for waste liquid is provided. A waste liquid pipe 141 is connected to the drain port, and the waste liquid pipe 141 communicates with a waste liquid port (not shown) below using a space N between the unit bottom plate 151 and the casing 41 ′. The waste liquid pipes 141a are respectively connected to a plurality of resist coating units (COT). Therefore, the waste liquid pipes 141a are arranged in a line as shown in the processing unit section.
[0140]
On the other hand, an air flow path for controlling atmospheric pressure described later is formed by a space L between the housing 41 'and the unit bottom plate on the opposite side (right side in FIG. 17). The fan / filter unit F of another resist coating unit (COT) in the lower stage of (COT) is visible.
[0141]
A nozzle 135 for supplying a resist to the wafer surface of the wafer W is connected to a liquid supply mechanism (not shown) in the chemical chamber (CHM) 26 (FIG. 2) via a supply pipe 134. The nozzle 135 is detachably attached to the tip of the nozzle scan arm 136 by a nozzle standby unit 146 disposed outside the cup CP, and is transferred to a predetermined resist discharge position set above the spin chuck 142. It is like that. The nozzle scan arm 136 is attached to the upper end of a vertical support member 149 that can move horizontally on a guide rail 144 laid in one direction (Y direction) on the unit bottom plate 151, and is not shown in the figure. Accordingly, the vertical support member 149 and the vertical support member 149 move together in the Y direction.
[0142]
The nozzle scan arm 136 is movable in the X direction perpendicular to the Y direction in order to selectively attach the nozzle 135 depending on the type of resist by the nozzle standby unit 146, and is also moved in the X direction by an X direction drive mechanism (not shown). It is supposed to be.
[0143]
Further, a drain cup 138 is provided between the cup CP and the nozzle standby unit 146, and the nozzle 135 is cleaned at this position prior to the supply of the resist to the wafer W.
[0144]
On the guide rail 144, not only the vertical support member 149 that supports the nozzle scan arm 136 described above, but also a vertical support member that supports the rinse nozzle scan arm 139 and is movable in the Y direction. A rinse nozzle 140 for side rinse is attached to the tip of the rinse nozzle scan arm 139. The rinse nozzle scan arm 139 and the rinse nozzle 140 are moved by the Y direction drive mechanism (not shown) to the nozzle standby position (solid line position) set to the side of the cup CP and the wafer W placed on the spin chuck 142. It moves in translation or linearly between the rinsing liquid discharge position (position of the dotted line) set right above the peripheral edge.
[0145]
Next, the configuration of the developing unit (DEV) shown in FIGS. 19 and 20 will be described. In this developing unit (DEV), the same components as those in the resist coating unit (COT) are denoted by the same reference numerals, and the description thereof is omitted.
[0146]
The nozzle 153 for supplying the developer to the wafer surface of the wafer W is slightly longer than the diameter of the wafer W, and a plurality of holes for discharging the developer are formed although not shown. A nozzle standby unit 154 is provided on the side of the cup CP, and is provided with a rinse nozzle 155 for supplying a rinse liquid for washing away the developer onto the surface of the wafer W. The rinse nozzle 155 has the same configuration as the nozzle 153. Further, in the nozzle standby unit 154, in order to discard the developer that has deteriorated by drying at the tip of the nozzle 135, dummy dispensing is performed periodically or as necessary.
[0147]
Although the nozzle scan arm 136 of the resist coating unit (COT) was movable in the X direction, the nozzle scan arm of the development unit (DEV) was only moved in the Y direction along the guide rail 144. Yes.
[0148]
Further, regarding the bottom coating unit (BARC), the coating liquid in the resist coating unit (COT) is merely replaced with the antireflection film material, and thus the description of the configuration is omitted here.
[0149]
Next, a series of operations of the substrate processing apparatus 1 described above will be described with reference to a flowchart shown in FIG.
[0150]
First, in the cassette station 10, the wafer transfer body 22 accesses the cassette CR containing the unprocessed wafer on the cassette mounting table 20, and takes out one semiconductor wafer W from the cassette CR (S1). When the semiconductor wafer W is taken out from the cassette CR, the wafer carrier 22 rotates 180 ° in the θ direction, and the shutter 76a (FIG. 11, FIG. 11) of the opening 75a of the temperature control unit (TCP) in the third processing unit G3. 12) opens, and the wafer W is inserted into the housing 75 through the opening 75a, and the wafer W is placed on the temperature control plate. And predetermined | prescribed temperature control processing (1st temperature control) is performed (S2).
[0151]
When the temperature adjustment process in the temperature adjustment unit (TCP) is completed, the opening 75b on the opposite side is opened, from which the upper arm 7a of the first main wafer transfer body 16 is inserted, and the wafer W is received by the arm 7a. Passed. Then, the main wafer transfer body 16 is rotated 90 ° counterclockwise in FIG. 4, the shutter 43 of the bottom coating unit (BARC) belonging to the first processing unit G1 is opened, and the upper arm 7a is inserted into the housing. Then, the wafer W is placed at a predetermined position, and an antireflection film is formed (S3). In this way, the wafer W is transferred from the temperature control processing unit to the coating processing unit (G1 and G2) only by the upper arm 7a, and the transfer after the heat treatment described later is performed by the middle arm 7b or the lower arm 7c. By doing so, the thermal effect on the wafer W can be minimized.
[0152]
When the predetermined coating process in the bottom coating unit (BARC) is completed, the shutter 43 is opened, the middle arm 7b (or the lower arm 7c) is inserted, and the wafer W is delivered, and the middle arm is returned to its original position (housing 41). Within). Then, the wafer W is transferred to the heating unit (HP) 113 and subjected to the first heating process (S4). This heating temperature is 120 ° C., for example.
[0153]
Next, in the high temperature heat treatment unit (BAKE) shown in FIG. 15, the shutter 76b is opened, the shutter 76 shown in FIG. 15 is opened, and the middle arm 7b of the first main wafer carrier A1 on which the wafer W is placed (or The lower arm 7c) moves in the Y direction to a position directly above the temperature control device C1, the lift pins 127 in the temperature control device C1 rise, and the wafer W is placed on the pins 127 at a position higher than the height of the sub arm 115. After this, the middle arm 7b is placed in the original position and the shutter 76 is closed. At this time, the sub arm 115 stands by in the vicinity of the center of the unit so as not to hinder the operation of the main wafer transfer body 16. Then, the waiting sub arm 115 moves onto the temperature control device C1. The lift pins 127 are lowered with the wafer W placed thereon, and the wafer W is transferred to the sub arm 115.
[0154]
The sub-arm 115 that has received the wafer W moves to the back side in the X direction, and is similarly placed on the hot plate 112 of the high-temperature heat treatment apparatus HH, which is the next process, by driving the elevating pins. A subsequent heat treatment is performed (S5). For example, the heat treatment is performed at 230 ° C. for a predetermined time.
[0155]
When the predetermined heat treatment is completed by the high temperature heat treatment apparatus HH, the wafer W is moved to the temperature adjustment apparatus C1 by the sub arm 115, and is placed on the temperature adjustment plate 163 via the lift pins 127 and adjusted to a predetermined temperature. (S6).
[0156]
Then, the wafer W is transferred from the high temperature heat treatment unit (BAKE) to the first main wafer transfer unit A1 by the first main wafer transfer body 16, and from here the high-precision temperature control unit belonging to the fourth processing unit unit G4. (CPL) is conveyed by the same operation. Here, for example, a predetermined temperature adjustment process is performed at a temperature of 23 ° C. (second temperature adjustment) (S7).
[0157]
When the temperature adjustment process is completed, the shutter 43 shown in FIG. 17 is opened and transferred to the resist coating unit (COT) belonging to the first processing unit G1, and the resist solution coating process is performed (S8). .
[0158]
In this resist coating unit (COT), when the wafer W is transferred to a position directly above the cup CP, first, the pins 148 are raised and lowered after receiving the wafer W, and the wafer W is placed on the spin chuck 142. It is placed and vacuum-sucked. Then, the nozzle 135 that has been waiting in the nozzle standby portion moves to above the center position of the wafer W shown in FIG. 17 by the mechanism of the nozzle scan arm 136 and the guide rail 144. After a predetermined resist solution is applied to the center of the wafer W, the resist solution is applied by rotating the drive motor 143 at, for example, 100 rpm to 3000 rpm, and diffusing the resist solution over the entire surface of the wafer W by the centrifugal force. Complete.
[0159]
Subsequently, the shutter 76b of the pre-baking unit (PAB) in the fourth processing unit G4 is opened, and as shown in FIG. 22A, the middle arm 7b on which the wafer W is placed is temperature-controlled and transported in the Y direction. Then, as shown in FIG. 5B, the elevating pins 84 are raised, and after the wafer W is placed on the pins, the middle arm 7b is kept at the original position and the shutter 76b. Then, as shown in FIG. 5C, the elevating pins 84 are lowered and the wafer W is placed on the temperature control / transfer plate 71 (S9). Note that the chamber cover 170 in the heat treatment apparatus H is in a closed state between FIGS. 22 (a) to 22 (c).
[0160]
Then, as shown in FIG. 23A, the chamber cover 170 is opened upward, and the temperature control / transfer plate 71 on which the wafer W is placed moves to the back side to a position directly above the hot plate 86, and then the same. After the pins 85 are lifted and the wafer W is placed on the pins as shown in FIG. (B), the temperature control / conveyance plate 71 is placed in the original position, and the pins as shown in FIG. 85 is lowered and the wafer W is placed on the hot plate 86, the chamber cover 170 is lowered and closed, and a predetermined second heat treatment (PAB) is performed (S10). As a result, the residual solvent is removed by evaporation from the coating film on the semiconductor wafer W.
[0161]
When the predetermined heat treatment is finished by the heat treatment apparatus H, an operation opposite to the operation shown in FIG. 23 is performed. That is, the wafer W is placed on the temperature control / transfer plate 71 from the hot plate 86 by the temperature control / transfer apparatus C and returned to the front side. At this time, the temperature adjustment / transfer apparatus C moves to the front side while adjusting the temperature of the heated wafer W at 40 ° C. (while adjusting the temperature of the wafer W) (S11). As a result, the processing time from the heat treatment to the temperature adjustment treatment can be shortened, and the throughput can be improved.
[0162]
The wafer W is then taken out from the temperature control / transfer apparatus C by the second main wafer transfer body 17 in the reverse operation to that described with reference to FIG. 22, and then the window 38a of the door 38 shown in FIG. Passed to the film thickness inspection unit 119 and the peripheral exposure unit 120. Here, after a predetermined film thickness inspection and substrate peripheral exposure processing are performed (S12), the second main wafer transfer body 17 again causes the temperature control / transfer device C of the fifth processing unit G5 to move up and down pins 84. Then, the wafer is transferred from the interface unit 14 (S13) to the exposure apparatus (not shown) by the wafer transfer body 27 (S15). In this case, the wafer W may be temporarily stored in the buffer cassette BR before being transferred to the exposure apparatus. Then, a predetermined temperature adjustment process is performed by the high-precision temperature adjustment unit (CPL) 130 of the interface unit 14 (S14). The film thickness inspection is a unit that performs microscopic inspection with an inspection device instead of direct visual inspection. In addition to the film thickness inspection, for example, foreign matter inspection such as particles, surface inspection, and the like are also performed. In this regard, for example, all the wafers W may not be inspected but may be appropriately performed.
[0163]
When the exposure process is completed, the wafer W is again transferred to the post-exposure baking unit (PEB) belonging to the fifth processing unit G5 by the wafer transfer body 27 via the interface unit 14. Is transferred from the wafer transfer body 27 to the temperature adjustment / transfer apparatus C (S16), transferred from the temperature adjustment / transfer apparatus C to the heat treatment apparatus H by the same operation as described in S9 to S11. Heat treatment is performed (third heating) (S17), and the temperature is adjusted and transferred to a predetermined temperature, for example, by about 40 ° C. by the temperature control / transfer apparatus C (S18), and the second main wafer transfer unit A2 performs the second process. The main wafer carrier 17 takes out the wafer W.
[0164]
Next, a temperature adjustment process is performed, for example, at 23 ° C. by the high-precision temperature adjustment unit (CPL) belonging to the fifth processing unit G5 (fourth temperature adjustment) (S19), and then the main wafer transfer body 17 performs the second adjustment. Is transferred to the developing unit (DEV) belonging to the processing unit G2 and the coating process of the developer is performed (S20).
[0165]
In the developing unit (DEV), when the wafer W is transferred to a position directly above the cup CP, first, the pins 148 are raised and lowered after receiving the wafer W, and the wafer W is placed on the spin chuck 142. It is placed and vacuum-adsorbed. Then, the nozzle 135 that has been waiting in the nozzle standby portion moves to above the peripheral position of the wafer W by the mechanism of the nozzle scan arm 136 and the guide rail 144. Subsequently, the wafer W is rotated by, for example, 10 rpm to 100 rpm by the drive motor 143, and a predetermined developer is applied by the centrifugal force of rotation while the nozzle 135 moves in the Y direction from the periphery of the wafer W.
[0166]
Next, the wafer is transferred to the post-baking unit (POST) belonging to the fourth processing unit G4. In this case, the main wafer transfer body is also operated by the same operations as described in S9 to S11 and S16 to S18. 17 is transported from the temperature control / conveyance device C to the heat treatment device H, and is heated by the heat treatment device H (fourth heating) (S22). The wafer W is transferred by the transfer device C while adjusting the temperature of the wafer W (S23), and this time, the wafer W is taken out by the first main wafer transfer body 16 in the first main wafer transfer section A1. For example, the heat treatment is performed at 100 ° C. for a predetermined time. Thereby, the resist swollen by the development is cured, and the chemical resistance is improved.
[0167]
Then, the wafer W is returned to the cassette CR of the cassette station 10 by the main wafer transfer body 16 through the spare space in the third processing unit G3 and the wafer transfer 22 (S24). Here, before returning to the cassette CR of the cassette station 10, the processing unevenness or the like on the wafer substrate W may be macroscopically inspected with the naked eye by a macro inspector (not shown) provided on the back side of the cassette station 10. is there. In addition to the macro inspection, for example, inspection of pattern defects after development, line width, overlay / overlay accuracy, and the like may be performed. Such a macro inspection device may be externally attached so as to protrude to the back side of the cassette station 10 or may be arranged in the cassette station 10.
[0168]
As described above, immediately after the first heating (S5), the second heating (S10), the third heating (S17), and the fourth heating (S22), the temperature is controlled while being conveyed by the temperature adjustment / conveying device C. -Since the temperature is adjusted, the temperature adjustment processing time by the second temperature adjustment (S7), the third temperature adjustment (S14), and the fourth temperature adjustment (S19), which are the subsequent processes, can be shortened, and the throughput is improved. To do.
[0169]
Further, each of the heat treatment unit parts G3 to G5 is composed of 10 stages, and each of the coating process unit parts G1 and G2 is composed of 5 stages, and each of these process unit parts G1 to G5 is composed of a first main wafer transfer part A1, 21. The main wafer transfer unit A2 is disposed so as to surround the main wafer transfer unit A2, so that a large number of substrates can be processed quickly, and each main wafer transfer unit 16 and 17 can efficiently access each processing unit, and throughput can be improved. Contributes to improvement.
[0170]
Further, by performing the heat treatment from the main wafer transfer bodies 16 and 17 by the heat treatment apparatus H via the temperature adjustment / transfer apparatus C, that is, before performing the heat treatment, the temperature adjustment / transfer apparatus C must always Since the temperature is maintained at a predetermined temperature, there is no difference in the processing state even if the heat treatment time is constant, and the thermal history of the wafer W in the entire substrate processing can be constant.
[0171]
Further, as shown in FIG. 1, between the heating devices H, HH, etc. in the heat treatment system processing units G3 to G5 and the coating system treatment units G1, G2, temperature control devices C1, C2, C Therefore, it is possible to minimize the thermal influence of the heating devices H and HH on the coating processing units G1 and G2.
[0172]
On the other hand, since the main wafer transfer units A1 and A2 and the processing units G1 to G5 are surrounded by the surrounding members 44 and 44 ', particles to the processing units and the transfer units are formed. Can be prevented from entering.
[0173]
Further, as shown in FIG. 4, each of the surrounding members 44 and 44 ′ provides a gap u between the surrounding members 44 of the first and second main wafer transfer portions A1 and A2 and each processing unit. Thus, vibration due to the transfer of the main transfer wafer transfer portions A1 and A2 is not transmitted to each processing unit, and each heat treatment and each coating process can be performed reliably.
[0174]
Next, the atmospheric pressure and temperature / humidity control of the substrate processing apparatus 1 will be described with reference to FIGS.
[0175]
24, air supply chambers 10a, 12a, and 14a are provided above the cassette station 10, the processing station 12, and the interface unit 14, and a filter with a dustproof function, for example, ULPA is provided on the lower surface of the air supply chambers 10a, 12a, and 14a. Filters 101, 102, and 103 are attached. Air that is cleaner than the ULPA filters 101, 102, and 103 in each air supply chamber is supplied to each of the units 10, 12, and 14 in a downflow, and the air is supplied from these air supply chambers to each processing unit as shown in FIGS. It is designed to flow. The downflow air is supplied in the direction of the arrow (upward) from the ducts 31 and 32 described above. In each of the first and second processing unit parts G1 and G2, each fan provided on the back side is provided. 106 is exhausted from the exhaust duct 100 (see FIG. 24) to the lower exhaust port 125, and in the third to fifth processing unit portions G3 to G5, the flow path 75b and the fans 87a and 87b (FIG. 11). ) Is exhausted from the exhaust port 75d to the lower exhaust port 125. Further, as shown in FIG. 26, in the first and second main wafer transfer sections A1 and A2, the air is exhausted from the lower exhaust port 125 through each fan 36, and the peripheral exposure apparatus 120 and the window 38a of the door 38 are further exhausted. The air is exhausted to the inspection unit portion 119 and exhausted to the exhaust port 125. The rotation speeds of the fans 106, 87a, 87b, 36 are all controlled by the control unit 8 individually for each unit.
[0176]
Further, in each of the units of the coating system unit (G1, G2), a fan / filter unit F is mounted above them, and sensors S for measuring atmospheric pressure, temperature and humidity are provided. The fan / filter unit F includes, for example, a ULPA filter and a small fan. On the other hand, the same sensor S is provided in each of the third to fifth processing unit parts G3 to G5 and each unit, and the sensor S is also provided in the first and second main wafer transfer parts A1 and A2. . In each of the sensors S described above, the detection result is taken into the control unit 8.
[0177]
With the above configuration, for the atmospheric pressure control, the atmospheric pressure in the first and second processing unit units G1 and G2 is changed to the first and second main wafer transfer units A1 and A2, and the third to fifth processing unit units G3. For example, the pressure is controlled to be higher by 0.3 (Pa) to 0.4 (Pa) than the atmospheric pressure in G5. In this way, by controlling the pressure in the coating system units G1 and G2 to be higher than the pressure in the heat treatment system and the transport system, that is, by controlling the positive pressure, the coating system that requires the most particle restriction is used. The coating process in the unit can be performed reliably and with high accuracy.
[0178]
Also, with the above configuration, the pressure, temperature, and humidity in each unit in the first to fifth processing unit units G1 to G5 and the first and second main wafer transfer units A1 and A2 are individually PID controlled. Therefore, each process can be performed in an optimum environment suitable for the process of each unit.
[0179]
Further, in FIG. 4, during maintenance of the first or second main wafer transfer unit A1 or A2, when the door 38 is opened, all the units G1 to G5 and all the main transfer units A1 are based on a command from the control unit 8. And the amount of clean air supplied in A2 is increased to further increase the atmospheric pressure. Thereby, particles generated during maintenance can be suppressed. Further, in addition to the atmospheric pressure control, the atmospheric pressure in the entire system (substrate processing apparatus 1) may be increased when the rear panel 40 is removed or opened / closed in FIG. In such a case, a fan that operates only during maintenance may be provided separately to increase the atmospheric pressure in the entire system (substrate processing apparatus 1).
[0180]
Further, as shown in FIG. 1, between the heating devices H, HH, etc. in the heat treatment system processing units G3 to G5 and the coating system treatment units G1, G2, temperature control devices C1, C2, C Therefore, it is possible to minimize the thermal influence of the heating devices H and HH on the coating processing units G1 and G2. Therefore, temperature control in each coating system processing unit G1 and G2 can be performed precisely.
[0181]
In the substrate processing apparatus 1, as shown in FIG. 27, when one window 75a is opened by the shutter 76a in each of the units G3 to G5 of the heat treatment system, the other window 75b is the shutter 76b. The opening / closing control is performed so as to be closed. As a result, each unit functions like a load lock chamber, effectively shuts off the environment on both sides over each unit, and can maintain a favorable processing environment in each unit.
[0182]
Furthermore, in the substrate processing apparatus 1, as shown in FIG. 28, when the opening 97 of each unit in each unit part G1, G2 of the liquid supply system is opened by the shutter 43, the heat treatment on both sides of this unit part. Opening and closing control is performed so that the windows 75a and 75b of the units in the unit units G3 to G5 of the system are closed by the shutters 76a and 76b. This prevents an atmosphere that adversely affects processing from flowing from the liquid supply system unit to the heat treatment system unit.
[0183]
Furthermore, this system can also control the temperature of the liquid supply devices 58 and 59 in the chemical chambers (CHM) 26 and 27. Thereby, the temperature of the processing liquid supplied to the coating processing units G1 and G2 is maintained in a suitable state. It is also possible to substitute a chamber used as a coating processing unit for a chemical chamber.
[0184]
FIG. 29 shows a heat treatment unit according to the second embodiment of the present invention, and the description of the same elements as those in FIGS. 11 and 12 is omitted.
[0185]
In the heat treatment unit G3 ′, a temperature adjustment device C1 ′, a low temperature heat treatment device LH, and a high temperature heat treatment device HH are arranged in a linear manner in the housing 75 in order from the front side (left side in the figure). Yes. These heat treatment apparatuses LH and HH are different only in the heating temperature, and these structures are the same as the heat treatment apparatus H of the first embodiment. The apparatus LH is provided with a low temperature hot plate 111, and the high temperature heat treatment apparatus HH is provided with a high temperature hot plate 112. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be moved up and down by a driving device 82, and these three pins 85 are formed on the respective hot plates 111 and 112. The through holes 111a and 112a are buried and disposed. On the other hand, the temperature control device C1 ′ is the same as the temperature control device in the temperature control unit (COL) of the first embodiment, for example, and uses a Peltier element or cooling water as the temperature control mechanism.
[0186]
A guide rail 118 extends in the X direction on the side of the temperature control device C1 ′, the low temperature heat treatment device LH, and the high temperature heat treatment device HH, and is moved along the guide rail 118 by a driving device (not shown). A sub arm 115 is provided as possible. The sub arm 115 has a pair of hands 115a and 115a.
[0187]
The heat treatment unit G3 ′ is arranged in the same manner as the arrangement of the processing unit parts G3 to G5 in the first embodiment. In this case, the panel 40 on the back side of the processing station 12 in FIG. 1 is moved to the back side and arranged in accordance with the dimensions of the heat treatment unit G3 ′.
[0188]
Regarding the action of the heat treatment unit G3 ′, the shutter 76 is opened, and the middle arm 7b (or the lower arm 7c) of the first or second main wafer transfer body A1 or A2 is positioned directly above the temperature control device C1 ′ in the Y direction. And the elevating pins 127 in the temperature control device C1 ′ are raised, and the wafer W is placed on the pins 127 at a position higher than the height of the sub-arm 115, and then the middle stage arm 7b is kept at the original position. The shutter 76 is closed. At this time, the sub arm 115 is positioned on the low temperature heat treatment apparatus LH side so as not to hinder the operation of the main wafer transfer body 16. Then, the sub arm 115 located on the low temperature heat treatment apparatus LH side moves onto the temperature adjustment apparatus C1 ′. The lift pins 127 are lowered with the wafer W placed thereon, and the wafer W is transferred to the sub arm 115.
[0189]
Then, the sub arm 115 that has received the wafer W moves to the back side in the X direction, and similarly, by driving the lifting pins, the low temperature heat treatment apparatus LH that is the next process and the high temperature heat treatment apparatus HH that is the next process. The plates are sequentially placed on the hot plates 111 and 112 and subjected to predetermined heat treatment.
[0190]
When the predetermined heat treatment is completed by the high temperature heat treatment apparatus HH, the wafer W is moved to the temperature adjustment apparatus C1 ′ by the sub arm 115 and placed on the temperature adjustment plate 122 to perform a predetermined temperature adjustment process.
[0191]
In the present embodiment, in particular, heat treatments with different temperatures and further temperature control can be performed continuously, and throughput can be improved.
[0192]
If the temperature control device C1 ′, the low-temperature heat treatment device LH, and the high-temperature heat treatment device HH are appropriately partitioned by a shielding plate, the temperature control in each device can be performed more precisely.
[0193]
FIG. 30 shows a substrate processing apparatus according to a third embodiment of the present invention. This substrate processing apparatus 150 is further modified by applying a coating system by changing the second main wafer transfer portion A2 in the first embodiment. The processing unit part G2 ′ is added, and the other configuration is the same as that of the first embodiment. The processing unit G2 ′ has a resist coating unit (COT) and a developing unit (DEV).
[0194]
In the main wafer transfer unit A1 (A2) according to the first embodiment, the main wafer transfer body 16 (17) itself did not move in the Y direction. However, the third main wafer transfer unit according to the third embodiment A3 is provided with a Y-axis pole 128 so that it can also move in the Y direction. The Y-axis pole 128 is movable along the vertical pole 33, and the main wafer transfer body 17 is attached so as to be movable along the Y-axis pole.
[0195]
Thereby, after the substrate is processed in the fourth and fifth heat treatment units G4 and G5, the substrate that cannot be processed by the processing units G1 and G2 of the first and second coating systems is transferred to the third third processing unit. The main wafer transfer body 17 by the 3 main wafer transfer units A3 can be transferred to the processing unit G2 ′ to perform a predetermined coating process. This improves the throughput.
[0196]
Next, a fourth embodiment of the present invention will be described.
[0197]
FIG. 31 is a plan view showing the configuration of the substrate processing apparatus according to this embodiment, and FIG. 32 is a partial perspective view thereof.
[0198]
As shown in these drawings, the substrate processing apparatus 201 according to this embodiment is different from the above-described embodiment in the configuration of the interface unit 202. In the interface unit 202 according to this embodiment, two stages of first and second interface units 202 a and 202 b are provided between the exposure unit 203 and the interface unit 202.
[0199]
In the first interface unit 202a, the wafer transfer body 204 is disposed so as to face the opening of the fifth heat treatment unit G5.
[0200]
On the back side of the wafer transport body 204, a peripheral exposure apparatus WEE, an in-buffer cassette INBR, and an out-buffer cassette OUTBR are arranged in multiple stages in order from the top so as to face the wafer transport body 204. The in-buffer cassette INBR temporarily stores the wafers W carried into the exposure apparatus 203. For example, the in-buffer cassette INBR stores about 25 wafers W. The out buffer cassette OUTBR temporarily stores the wafers W carried out from the exposure apparatus 203. For example, the out buffer cassette OUTBR stores about 25 wafers W.
[0201]
On the front side of the wafer transfer body 204, a transfer unit TRS and two stages of high-precision temperature control units CPL are arranged in multiple stages in order from the top so as to face the wafer transfer body 204. Although not shown, the transfer unit TRS is configured, for example, by providing three support pins for supporting the wafer W on a base, and a wafer transfer body 204 in the first interface unit 202a and a second interface unit to be described later. An opening is provided to allow access from both of the wafer transfer bodies 206 in 202b. The high-precision temperature control unit CPL has substantially the same configuration as that of the above-described embodiment, and from both the wafer transfer body 204 in the first interface unit 202a and the wafer transfer unit 206 in the second interface unit 202b described later. An opening is provided for access.
[0202]
The wafer transfer body 204 is configured to be movable in the Z direction and rotatable in the θ direction, and the transfer forks 204a in the wafer transfer body 204 are configured to be movable up and down, respectively. The fork 204a for delivery in the body 204 has each opening of the fifth heat treatment unit G5, the peripheral exposure apparatus WEE, the in-buffer cassette INBR, the out-buffer cassette OUTBR, the delivery unit TRS, and two stages of high-precision temperature control. The unit CPL is accessed, and the wafer W is transferred to and from these parts by separate forks 204, and the wafer W is transferred.
[0203]
A wafer transfer body 206 configured to be movable in the Y and Z directions and rotatable in the θ direction is disposed in the second interface unit 202b. In this wafer transfer body 206, the transfer pins 206a which can be moved forward and backward are accessed to the transfer unit TRS, each of the two high-precision temperature control units CPL, the in-stage 203a and the out-stage 203b in the exposure apparatus 203, and these parts. The wafer W is transferred between the two and the wafer W is transferred.
[0204]
Next, the transfer operation of the wafer W in the interface unit 202 configured as described above will be described.
[0205]
The wafer W carried in from the fifth heat treatment unit G5 is transferred from the wafer transfer body 204 to the in-buffer cassette INBR → the wafer transfer body 204 → the peripheral exposure apparatus WEE → the wafer transfer body 204 → the high-precision temperature control unit CPL → wafer transfer. It is conveyed to the in-stage 203a in the exposure apparatus 203 via the body 206.
[0206]
On the other hand, the wafer W unloaded from the outstage 203b in the exposure apparatus 203 is transferred to the fifth heat treatment unit section via the wafer transport body 206 → the transfer unit TRS → the wafer transport body 204 → the out buffer cassette OUTBR → the wafer transport body 204. Carried out to G5.
[0207]
According to this embodiment, since the load on the wafer transfer body 206 is particularly reduced, the wafer W can be immediately unloaded from the outstage 203b in response to a request from the exposure apparatus 203. Therefore, the number of times that the wafer W requested to be unloaded on the exposure apparatus 203 side is kept waiting in the exposure apparatus 203 is very small. In addition, since the load on the wafer transfer body 204 is also reduced, the wafer W unloaded from the exposure apparatus 203 can be delivered to the fifth heat treatment unit G5 side in a certain time. Therefore, according to the substrate processing apparatus 201 of this embodiment, the line width can be formed more uniformly. Furthermore, according to this embodiment, it is possible to secure the maintenance area 207 where the operator can directly access the wafer transfer bodies 205 and 206 on the back side of the second interface unit 202b.
[0208]
The empty area 208 in front of the first interface unit 202a may be an area for arranging a tank or the like for storing a chemical solution necessary for the substrate processing apparatus 201.
[0209]
Further, the peripheral exposure apparatus may be arranged above the delivery unit TRS and the two-stage high-precision temperature control unit CPL.
[0210]
The present invention is not limited to the embodiment described above.
[0211]
In the above embodiment, three heat treatment system units (G3 to G5), two main wafer transfer units (A1, A2), and two coating system units (G1, G2) are provided. For example, four heat treatment system unit sections, three main wafer transfer sections, and three coating system unit sections may be added in the horizontal direction in FIG. 1 while maintaining the arrangement. It is also possible to add more as necessary.
[0212]
In addition, in the heat treatment unit G3 (G4, G5) shown in the figure, a shield plate 93 indicated by a one-dot chain line is provided between the temperature control / conveyance device C and the heat treatment device H so as to suppress mutual heat interference. When the temperature control / conveyance apparatus C performs conveyance, the shielding plate 93 may be slid to open and close.
[0213]
Furthermore, the present invention can be applied not only to a semiconductor wafer but also to a glass substrate used in a liquid crystal display device, for example.
[0214]
【The invention's effect】
As described above, according to the present invention, the time required for the substrate temperature adjustment process can be substantially reduced, and the influence of the time required for the substrate temperature adjustment process on the decrease in throughput can be reduced as much as possible. it can.
[Brief description of the drawings]
FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a front view showing an overall configuration of the substrate processing apparatus.
FIG. 3 is a rear view showing the overall configuration of the substrate processing apparatus.
FIG. 4 is a cross-sectional view of a main wafer transfer unit according to the first embodiment of the present invention.
FIG. 5 is a perspective view showing a main part of the main wafer transfer unit.
FIG. 6 is a side view of the main wafer transfer unit.
FIG. 7 is a side view showing a driving mechanism of the main wafer transfer body in the main wafer transfer unit.
FIG. 8 is a front view of the main wafer transfer body.
FIG. 9 is a sectional view of the main wafer carrier.
10 is a cross-sectional view in the [10]-[10] line direction in FIG. 9;
FIG. 11 is a cross-sectional view of a pre-baking unit (PAB), a post-exposure baking unit (PEB), and a post-baking unit (POST) according to the first embodiment of the present invention.
FIG. 12 is a longitudinal sectional view of the heat treatment unit.
FIG. 13 is a schematic view for illustrating a temperature control mechanism of a housing in the heat treatment unit.
FIG. 14 is a cross-sectional view of a high-precision temperature control unit (CPL) according to the first embodiment of the present invention.
FIG. 15 is a cross-sectional view of a high temperature heat treatment unit (BAKE) according to the first embodiment of the present invention.
FIG. 16 is a cross-sectional view of a transition unit (TRS) according to the first embodiment of the present invention.
FIG. 17 is a plan view showing a resist coating unit according to the first embodiment of the present invention.
FIG. 18 is a longitudinal sectional view of the same.
FIG. 19 is a plan view showing the developing unit according to the first embodiment of the present invention.
FIG. 20 is a longitudinal sectional view of the same.
FIG. 21 is a flowchart showing a series of operations of the substrate processing apparatus according to the first embodiment of the present invention.
FIG. 22 is a diagram for explaining the operation of substrate transfer in the heat treatment unit.
FIG. 23 is an operation diagram of the heat treatment unit.
FIG. 24 is a schematic front view showing the flow of clean air in the substrate processing apparatus according to the first embodiment of the present invention.
FIG. 25 is a schematic side view showing the flow of the clean air.
FIG. 26 is a schematic side view showing the flow of the clean air.
FIG. 27 is a diagram for explaining a shutter opening / closing operation (part 1) according to the present invention;
FIG. 28 is a view for explaining a shutter opening / closing operation (part 1) according to the present invention;
FIG. 29 is a cross-sectional view of a heat treatment unit according to the second embodiment of the present invention.
FIG. 30 is a partial plan view of a substrate processing apparatus according to a third embodiment of the present invention.
FIG. 31 is a plan view of a substrate processing apparatus according to a fourth embodiment of the present invention.
32 is a perspective view of an interface unit in the substrate processing apparatus shown in FIG. 31. FIG.
[Explanation of symbols]
W ... Semiconductor wafer
G1 to G5: First to fifth processing unit parts
u ... Gap
A1... First main wafer transfer unit
A2: Second main wafer transfer unit
F ... Filter
S ... Sensor
C ... Temperature control and transfer device
H ... Heat treatment equipment
LH ... Low temperature heat treatment equipment
HH ... High temperature heat treatment equipment
1 ... Substrate processing apparatus
7a ... Upper arm
7b ... Middle arm
7c ... Lower arm
8. Control unit
9 ... Shield plate
16 ... Main wafer carrier
17 ... Second main wafer carrier
36 ... Fan
38 ... Door
40 ... Panel
41 ... Case
44 ... Go member
58 ... Liquid supply device
75 ... Case
75b ... Flow path
75c ... Opening
75a ... opening
76 ... Shutter
84 ... Lifting pin
93 ... Shield plate
115 ... Sub arm
150 ... Substrate processing apparatus

Claims (7)

A main transport unit for transporting the substrate;
A processing unit disposed around the main transfer unit and performing thermal processing on at least the substrate;
Are disposed around the main transfer section, comprising a supply liquid supply unit to a predetermined liquid onto the substrate,
The main transport unit, the processing unit, and the liquid supply unit are disposed in separate casings, and each casing has an opening for transferring a substrate, A passage connecting adjacent openings is surrounded by a surrounding member,
A substrate processing apparatus , wherein a minute gap is provided between the surrounding member and at least one of the casings . The apparatus further comprises atmospheric pressure control means for controlling the liquid supply unit so that the pressure is higher than that of the processing unit and the main transport unit, and the main transport unit and the processing unit have substantially the same atmospheric pressure. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is characterized. The substrate processing apparatus according to claim 2,
  The atmospheric pressure control means includes a gas supply unit that supplies gas to the main transfer unit, the processing unit, and the liquid supply unit, a gas exhaust unit that exhausts gas, and an atmospheric pressure measurement unit that measures atmospheric pressure, And controlling at least one of the amount of gas supplied by the gas supply unit and the amount of gas exhausted by the gas exhaust unit based on the measured atmospheric pressure. The substrate processing apparatus according to claim 3,
  The processing units are arranged in multiple stages in the vertical direction,
  A substrate processing apparatus comprising the gas supply unit, the gas exhaust unit, and the atmospheric pressure measurement unit for each processing unit. In the substrate processing apparatus of any one of Claims 2-4,
  At least one of the main transport unit, the processing unit, and the housing of the liquid supply unit is provided with an openable / closable door used for internal maintenance.
  The substrate processing apparatus, wherein the pressure control means controls the pressure inside the housing to be increased when the door is opened. In the substrate processing apparatus of any one of Claims 2-5,
  The housing further surrounds the main transport unit, the processing unit, and the liquid supply unit, and further includes an outer housing provided with an openable / closable panel used for internal maintenance.
  The substrate processing apparatus, wherein the pressure control means controls the pressure in the outer casing to be increased when the panel is opened. In the substrate processing apparatus according to claim 5 or 6,
  A substrate processing apparatus, wherein a gas supply unit that operates only when the door or the panel is opened is further provided in the casing or the outer casing.

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