CN117410213B - Wafer transmission device - Google Patents
Wafer transmission device Download PDFInfo
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- CN117410213B CN117410213B CN202311710963.6A CN202311710963A CN117410213B CN 117410213 B CN117410213 B CN 117410213B CN 202311710963 A CN202311710963 A CN 202311710963A CN 117410213 B CN117410213 B CN 117410213B
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 65
- 238000001816 cooling Methods 0.000 claims abstract description 117
- 238000010438 heat treatment Methods 0.000 claims abstract description 91
- 230000007246 mechanism Effects 0.000 claims abstract description 26
- 238000004891 communication Methods 0.000 claims abstract description 25
- 230000007704 transition Effects 0.000 claims description 29
- 238000012546 transfer Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000000110 cooling liquid Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 7
- 210000001503 joint Anatomy 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 44
- 239000007789 gas Substances 0.000 description 31
- 238000012545 processing Methods 0.000 description 8
- 238000009833 condensation Methods 0.000 description 6
- 230000005494 condensation Effects 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a wafer transmission device, which comprises a transmission shell, wherein the transmission shell is sequentially provided with at least two air filters along a first direction, a transmission cavity is formed between the bottom of each air filter and the transmission shell, and a placement cavity which is directly communicated with outside air is formed between the top of each air filter and the transmission shell. The placing cavity is internally provided with a temperature control mechanism, the temperature control mechanism comprises a temperature control shell, the temperature control shell is divided into cooling cavities and heating cavities which are alternately arranged along a first direction, the heating cavities are correspondingly arranged with air filters, an inlet of each air filter is only communicated with the corresponding heating cavity, and the cooling cavities are located between the two heating cavities and are directly communicated with the placing cavity. The communication port is used for conducting the cooling chamber and the adjacent heating chamber, and cooling air in the cooling chamber enters the heating chambers on two sides from the communication port. The heating control mechanism is used for adjusting the temperature of the air entering the transmission cavity, so as to meet the transmission requirement.
Description
Technical Field
The invention relates to the technical field of wafer transmission equipment, in particular to a wafer transmission device.
Background
Semiconductor processing is highly demanding in terms of processing environments and needs to be accomplished in a clean and stable clean room. Therefore, in the semiconductor processing factory, not only stable cleanliness is required in the factory, but also cleaner and more stable cleanliness is required in the clean room, and the stability in the clean room is represented by indexes such as humidity, temperature, airflow and particulate matters in the chamber, and can be always maintained in the use requirement range.
Different processing techniques have different requirements for the wafer transfer and processing environment, for example, requiring the wafer to be maintained at a particular temperature for transfer and processing, and during the transfer of the wafer, requiring the transfer chamber within the wafer transfer device to be maintained at that particular temperature at all times. The wafer conveying device is usually only provided with an air filter, and air in the clean room directly enters the conveying cavity after being filtered by the air filter, so that the temperature entering the conveying cavity is uncontrollable, and the conveying cavity cannot be stably maintained within a specific temperature, and the conveying requirement cannot be met.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks, an object of the present invention is to provide a wafer conveying device, which is added with a temperature control mechanism to regulate the temperature of the air entering the conveying cavity, thereby meeting the conveying requirement.
In order to achieve the above purpose, the invention adopts the following technical scheme: the utility model provides a wafer transmission device, includes the transmission casing, the transmission casing has set gradually two at least air cleaner along first direction, form a transmission cavity between air cleaner's bottom and the transmission casing, be provided with manipulator and pre-alignment mechanism in the transmission cavity, the one end butt joint of the second direction of transmission casing has a plurality of wafer loading device that are located the transmission cavity outside, form a place cavity that directly switches on with outside air between air cleaner's top and the transmission casing.
The device comprises a placing cavity, and is characterized in that a temperature control mechanism is arranged in the placing cavity and comprises a temperature control shell, wherein the temperature control shell is divided into cooling cavities and heating cavities which are alternately arranged along a first direction, the heating cavities are correspondingly arranged with air filters, the inlets of the air filters are only communicated with the corresponding heating cavities, the heating cavities can heat air in the heating cavities, the cooling cavities are located between the two heating cavities and are directly communicated with the placing cavity, and the cooling cavities can cool the air in the cooling cavities. The communication port is used for conducting the cooling cavity and the adjacent heating cavity, and cooling air in the cooling cavity enters the heating cavities on two sides from the communication port.
The invention has the beneficial effects that:
1. the temperature control mechanism is arranged above the air filter, and can adjust the air temperature, so that the air entering the air filter reaches the preset temperature, the temperature of the transmission cavity is maintained to be stable, and the temperature requirement of wafer transmission is met.
2. External air firstly enters the cooling cavity for cooling, then enters the heating cavity for heating, heated air is filtered by the air filter and then enters the transmission cavity, the temperature control mode of firstly cooling and then heating is convenient for the management and control of the air temperature, then the air is heated to the required constant temperature, and the temperature control is more accurate.
3. The heating chamber corresponds with the air filter, and the cooling chamber is located between two heating chambers, provides cooling gas for two adjacent heating chambers, and rational utilization space, overall structure is compacter.
Further, an air inlet corresponding to the position of the cooling cavity is formed in the top of the temperature control shell, a cooling pipe is arranged at the position, close to the air inlet, of the cooling cavity, and cooling liquid flows in the cooling pipe. The position of the cooling pipe is set to ensure that the outside air is cooled at the air inlet, so that the cooling effect is improved.
Further, the height of the communication port is lower than that of the cooling pipe, so that the cooling pipe does not interfere with the heating of the heating chamber. The heating chamber is provided with the heating pipe near the communication port, and the heating pipe heats the heating chamber, and the cooling air entering through the communication port is firstly heated through the heating pipe and refilled into the whole heating chamber, and enters the air filter.
Furthermore, each cooling pipe is communicated with Wen Kongda located outside the temperature control shell through a conveying water pipe, the temperature control tower is located outside the temperature control shell and forms a loop with each cooling pipe, and cooling liquid is stored in Wen Kongda and is cooled.
The cooling liquid reaching the set temperature in Wen Kongda enters the cooling pipe through one conveying water pipe, and the cooling pipe performs heat exchange when cooling the air in the cooling cavity, so that the temperature of the cooling liquid passing through the cooling pipe is increased, and the cooling liquid in the cooling pipe flows back to the temperature control tower from the other conveying water pipe for cooling.
Further, a condensing disc is arranged in the cooling cavity and used for collecting condensate. The cooling plate is located below the cooling pipe, the orthographic projection of the cooling pipe on the cooling plate is smaller than the area of the cooling plate, and part of the cooling plate extends out of the cooling cavity and passes through the communication port to extend to the position right below the heating pipe. Thus, the condensing disc can cover the whole corresponding cooling cavity, and can also cover the area, which is close to the communication port, of the heating cavity and is likely to generate condensed water, so that the condensed water is prevented from dripping to the air filter, and even the wafer conveying cavity.
Further, the air inlet is provided with a filter screen fixedly connected with the temperature control shell, so that the effect of preliminarily filtering air is achieved, and foreign matters are prevented from entering the temperature control cavity.
Furthermore, a gap is formed between two adjacent air filters, a steady flow temperature adjusting component located in the transmission cavity is arranged at each gap, the steady flow temperature adjusting component comprises two curved plate bodies, and the two curved plate bodies are arranged at intervals along the first direction. Each steady-flow temperature adjusting component is used for guiding the heating gas blown out by the air filter towards the position below the gap of the two adjacent air filters, so that the heating gas can uniformly enter the gap below the two air filters.
A transition cavity is formed between the two curved plate bodies, an opening is arranged under the transition cavity, the part of the transition cavity extends to the position right under the air filter, a through hole is formed in the curved plate body, and heating gas vertically blown downwards by the air filter enters the transition cavity from the through hole and is blown out from the opening after being mixed in the transition cavity.
Further, the two curved plate bodies are distributed in a mirror image mode, the curved plate bodies comprise flow-through sections, the upper ends of the flow-through sections are fixedly connected with the end portions, close to one air filter, of the other air filter, the flow-through sections incline towards the center direction of the air filter for fixing the curved plate bodies from top to bottom, parts of the flow-through sections extend to the position right below the air filter for fixing the flow-through sections, and the through holes are formed in the flow-through sections. The inclined flow-through section can enable the heated air vertically blown out by the air filter to turn and enter the transition cavity.
Further, the curved plate body further comprises a drainage section positioned below the flow-through section, and an opening is formed between the drainage sections of the two curved plate bodies. The drainage section is obliquely arranged, the oblique direction is opposite to that of the flow-through section, or the drainage section is vertically arranged. The heated gas introduced by the flow-through section is mixed between the flow-guiding sections, which guide the heated gas towards the opening.
Further, the length of the curved plate body in the second direction is not smaller than the width of the air filter in the second direction. Therefore, the heated gas blown out by the air filters in the second direction can be guided by the steady flow temperature adjusting component, a transition cavity is arranged below the gap between the adjacent air filters all the time, and the temperature in the transmission cavity is more uniform.
Drawings
FIG. 1 is a schematic perspective view of an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating a temperature control mechanism according to an embodiment of the present invention;
FIG. 3 is a side view of a temperature control mechanism according to an embodiment of the present invention;
FIG. 4 is a schematic view of a cooling assembly according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a structure of a steady flow temperature adjustment assembly fixedly connected to an air filter according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a steady flow temperature adjustment assembly according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a curved plate body according to an embodiment of the invention.
In the figure:
1. a transmission housing; 11. a transmission cavity; 12. placing the cavity; 13. an orifice plate;
2. an air filter; 21. a gap;
3. a temperature control mechanism; 31. a temperature control housing; 311. a cooling chamber; 312. a heating chamber; 313. a communication port; 32. a filter screen; 331. a cooling tube; 332. wen Kongda; 333. a delivery water pipe; 334. a liquid inlet pipe; 335. a liquid outlet pipe; 34. a condensing plate; 35. heating pipes;
4. a steady flow temperature adjusting component; 41. a curved plate body; 411. a flow-through section; 4111. a through hole; 412. a drainage section; 413. a circular arc section; 42. a transition chamber; 43. an opening.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present invention.
The wafer conveying device is used for conveying wafers, and referring to the figure 1, the wafer conveying device comprises a conveying shell 1, wherein the conveying shell 1 is sequentially provided with at least two air filters 2 along a first direction (X direction), the air filters 2 are arranged close to the top of the conveying shell 1, a closed conveying cavity 11 is formed between the bottom of each air filter 2 and the conveying shell 1, and each air filter 2 is positioned right above the corresponding wafer conveying cavity 11 and can convey filtered gas into the corresponding conveying cavity 11. A temperature control mechanism 3 is arranged above the air filter 2. The temperature control mechanism 3 is used for temperature adjustment, and the air outside the transmission shell 1 is subjected to temperature adjustment through the temperature control mechanism 3, so that the air entering the air filter 2 reaches the set temperature.
In this embodiment, a temperature control mechanism 3 above the air filter 2 is added, and the temperature control mechanism 3 can adjust the air temperature, so that the air entering the air filter 2 reaches the preset temperature, and the temperature of the transmission cavity 11 is maintained stable, thereby meeting the temperature requirement of wafer transmission.
Referring to fig. 1, a placing cavity 12 is formed between the top of the air filter 2 and the transmission housing 1, the placing cavity 12 is directly communicated with external air, and the temperature control mechanism 3 is arranged in the placing cavity 12. That is, the air filter 2 divides the transmission housing 1 into a placement cavity 12 and a transmission cavity 11 which are arranged up and down, external air firstly enters the placement cavity 12, and enters the air filter 2 for filtration after temperature is regulated by the temperature control mechanism 3 in the placement cavity 12, and finally enters the transmission cavity 11.
The top of the transmission shell 1 is provided with a pore plate 13, namely a plurality of air inlets are formed in the top plate of the transmission shell 1, the air inlets are communicated with outside air and the placement cavity 12, and the outside air can enter the placement cavity 12.
Referring to fig. 2, the temperature control mechanism 3 includes a temperature control housing 31, and the temperature control housing 31 is partitioned into cooling chambers 311 and heating chambers 312 alternately arranged in a first direction (X direction). The heating chamber 312 is provided corresponding to the air filter 2 and is directly connected to the inlet of the air filter 2, and the heating chamber 312 can heat the air therein. The inlet of the air filter 2 is in communication with only the corresponding heating chamber 312, so that the air entering the air filter 2 must only be heated air heated to a set temperature. The cooling chamber 311 is located between the two heating chambers 312 and is in direct communication with the placement chamber 12, the cooling chamber 311 being capable of cooling the air therein. The cooling chamber 311 and the heating chamber 312 are communicated through the communication port 313, and cooling air in the cooling chamber 311 enters the heating chambers 312 on both sides from the communication port 313.
The external temperature is not constant and has a temperature difference. In this embodiment, arrows in fig. 3 indicate the flowing direction of the air, that is, the outside air in the placing cavity 12, firstly enters the cooling cavity 311 downwards for cooling, then flows to both sides for heating in the heating cavity 312, and the heated air is filtered by the air filter 2 and then vertically enters the conveying cavity 11. The external air temperature is cooled to a constant temperature, so that the gas temperature is convenient to manage and control, and then the external air is heated to the required constant temperature, so that the temperature control is more accurate. The clean room is typically at a constant temperature of 22 c, while the transfer chamber 11 typically requires a specific temperature value of 21-26 c, and the temperature difference fluctuation cannot exceed + 0.1 c, typically by cooling the chamber 311 down to 18 c and then heating the chamber 312 to the desired temperature.
Because the gas that finally enters the air filter 2 is heated to a certain temperature, i.e. the gas output from the heating chamber 312 meets the requirements of the transfer chamber. The heating chamber 312 is thus provided in correspondence with the air filter 2 and directly above the inlet of the corresponding air filter 2. And the cooling chamber 311 is disposed between the two heating chambers 312 to supply cooled gas to the adjacent two heating chambers 312.
The chamber separation of the temperature-controlled housing 31 is determined according to the number of air filters 2, and as shown in fig. 2, the wafer transfer device is provided with two air filters 2, and the heating chambers 312 are also provided with two, and only one cooling chamber 311 is located between the two heating chambers 312. If the wafer transfer device is provided with three air filters 2, three heating chambers 312 are also provided, two cooling chambers 311 are provided, and two cooling chambers 311 are respectively located between two adjacent heating chambers 312.
The top of the temperature control shell 31 is provided with an air inlet which directly conducts the cooling chamber 311 and the placing chamber 12, and air in the placing chamber enters the cooling chamber 311 from the air inlet. The air in the cooling chamber 311 is cooled by the cooling assembly.
In one embodiment, a filter screen 32 fixedly connected with the temperature control shell 31 is arranged at the air inlet, so that foreign matters are prevented from entering the cooling chamber 311, and the effect of preliminary filtration is achieved.
Referring to fig. 2 and 4, the cooling assembly includes a cooling tube 331 fixed in the cooling chamber 311, and the cooling tube 331 is disposed near the air inlet to ensure that the external air is cooled at the air inlet. The cooling liquid flows in the cooling tube 331 to cool the air passing through the cooling tube 331.
The cooling assembly further comprises a temperature control tower 332 located in the placement cavity 12 and located outside the temperature control shell 31, and the cooling pipe 331 in each cooling chamber 311 forms a loop through the strokes of the two conveying water pipes 333 and Wen Kongda 332, so that Wen Kongda can store cooling liquid and cool the cooling liquid. The cooling liquid reaching the set temperature in Wen Kongda is introduced into the cooling tube 331 through one of the water delivery tubes 333, and the cooling tube 331 exchanges heat when cooling the air in the cooling chamber 311, so that the temperature of the cooling liquid passing through the cooling tube 331 is increased, and the cooling liquid in the cooling tube 331 flows back to the temperature control tower 332 from the other water delivery tube 333 to be cooled.
The delivery water tube 333 is located outside the delivery housing and does not interfere with the heating chamber. However, in order to save space, the water supply lines 333 may also be connected to the cooling lines through the heating chamber.
As shown in fig. 2 and fig. 4, the Wen Kongda 332 is further connected to a liquid inlet pipe 334 and a liquid outlet pipe 335, and the liquid inlet pipe 334 and the liquid outlet pipe 335 are fixed on the transmission housing 1. The cooling fluid may be supplemented or replaced to the temperature control tower 332 via a feed conduit 334 and a discharge conduit 335.
In one embodiment, referring to fig. 2, a condensing pan 34 is also disposed within the cooling chamber 311, and the condensing pan 34 is used to collect condensate within the cooling chamber 311. Condensate is easily generated on the cooling tube 331, and the condensing disk 34 is located below the condensing tube for collecting condensate generated on the cooling tube 331. The condensation plate 34 can cover the cooling tube 331 in the cooling chamber 311 where it is located, that is, the orthographic projection of the cooling tube 331 on the condensation plate 34 is smaller than the area of the condensation plate 34, so that condensate on the cooling tube 331 can be collected in the condensation plate 34.
A heating pipe 35 is provided in the heating chamber 312, and the heating pipe 35 heats the heating chamber 312. In one embodiment, referring to fig. 2 and 4, the communication port 313 is located below the cooling tube 331, the heating tube 35 is disposed in the heating chamber 312 near the communication port 313, and the cooling air introduced through the communication port 313 is first heated through the heating tube 35, refilled into the entire heating chamber 312, and introduced into the air filter 2.
Of course, in another embodiment, the heating pipe 35 may be disposed at other locations in the heating chamber 312, but the temperature at the inlet of the air filter 2 near the communication port 313 may be relatively low, resulting in uneven temperature of the gas entering the transfer chamber 11.
In one embodiment, a portion of the condensation plate 34 extends out of the cooling chamber 311 and through the communication port 313 to just below the heating pipe 35, such that the condensation plate 34 can cover the entire corresponding cooling chamber 311, as well as the area of the heating chamber near the communication port 313 where condensed water may be generated, to prevent condensed water from dripping into the air filter 2, and even into the wafer transfer chamber 11.
Each cooling chamber 311 and each heating chamber 312 are also respectively provided with a temperature sensor, the temperature sensors are used for collecting the temperature in the corresponding cooling chamber 311 or heating chamber 312, the temperature sensors are connected with a controller, and the controller is connected with the heating pipes 35 and Wen Kongda 332. The controller controls the opening and closing of the heating pipes 35 and Wen Kongda 332 according to the temperature value fed back by the temperature sensor, so that the dynamic control of the temperatures in the cooling chamber 311 and the heating chamber 312 is realized, the cooling chamber 311 and the heating chamber 312 are always kept at the set temperature values, and the temperature fluctuation finally entering the transmission chamber 11 is small.
The air filter 2 comprises an air filter 2 body and a fan, the fan provides power for starting flow, under the action of the fan, an external space enters the cooling chamber and then enters the heating chamber, and finally enters the transmission cavity from the heating chamber 312 through the air filter body.
A manipulator, a pre-alignment mechanism, a buffer rack and the like are arranged in the transmission cavity 11, one end of the transmission shell in the second direction (Y direction) is in butt joint with a plurality of wafer loading devices positioned outside the transmission cavity 11, and the other end of the transmission cavity 11 in the Y direction is provided with a wafer inlet and outlet. The manipulator takes out the wafer from the wafer box on the wafer loading device, the wafer is conveyed to the wafer inlet and outlet after being aligned by the prealignment mechanism, the manipulator at the processing equipment end takes the wafer out for processing, the wafer is conveyed to the wafer inlet and outlet after being processed, the wafer at the wafer outlet is conveyed to the buffer frame by the manipulator in the wafer conveying device for buffer storage, and finally the wafer is conveyed back to the wafer box of the wafer loading device.
Because the air filters 2 are arranged in sequence in the X direction, as shown in fig. 3, a gap 21 is formed between adjacent air filters 2 at a distance in the X direction, but the air passing through the air filters 2 is vertically downward and directly discharged from the bottom of the transmission cavity, which easily causes no inflow of heated air between adjacent air filters 2 or even a distance below the gap 21 (Z direction), that is, the temperature of the transmission cavity 11 near the upper end of the air filters 2 is uneven. The wafer inlet and outlet are arranged in the area, so that the temperature at the wafer inlet and outlet is not uniform. Even because of the uneven temperature difference, local air current in the area is disturbed, so that undesired particles flow in disorder, the cleanliness of the wafer transmission environment is reduced, and the production yield of chips processed from wafers is affected.
In one embodiment, referring to fig. 5, a steady flow temperature adjusting component 4 is further disposed in the transmission cavity 11, the number of the steady flow temperature adjusting components 4 is determined by the number of the air filters 2, one steady flow temperature adjusting component 4 is disposed between every two adjacent air filters 2, and the steady flow temperature adjusting component 4 is located between the two adjacent air filters 2. Each steady flow temperature adjusting component 4 is used for guiding the heated gas blown out by the air filters 2 towards the position below the gaps 21 of the two adjacent air filters 2, so that the heated gas can uniformly enter the gaps 21 of the two air filters 2. The arrows in fig. 5 indicate the flow direction of the gas, and the vertically downward heated gas blown by the air filter 2 can flow directly under the gap 21 under the guidance of the steady-flow temperature adjustment assembly 4.
Referring to fig. 4 and 6, each steady flow temperature adjustment assembly 4 includes two curved plate bodies 41 distributed in mirror image, the two curved plate bodies 41 are distributed at intervals along the X-direction, a transition cavity 42 is formed between the two curved plate bodies 41, an opening 43 is provided under the transition cavity 42, and the opening 43 is located under the gap 21. The transition chamber 42 extends to a position right below the air filter 2, and the bent plate body 41 is provided with a through hole 4111. The heated gas blown vertically downwards by the air filter 2 enters the transition cavity 42 from the through hole 4111, is mixed in the transition cavity 42 and then blown out from the opening 43, so that the heated gas is ensured to be also arranged right below the gap 21, and the uniformity of the gas in the whole transmission cavity 11 is improved.
In one embodiment, the width of the opening 43 in the X-direction is equal to the width of the gap 21 in the X-direction, which ensures that the gas exiting the transition chamber 42 can certainly cover the space below the gap 21. Of course, the width of the opening 43 in the X direction is slightly larger or smaller than the width of the gap 21 in the X direction, but the width of the opening 43 in the X direction should not be too large or too small.
Referring to fig. 7, each curved plate body 41 includes a flow-through section 411 and a flow-guiding section 412 which are disposed up and down, the upper end of the flow-through section 411 is fixedly connected with the end portion of one air filter 2 close to the other air filter 2, the flow-through section 411 is disposed obliquely, the flow-through section 411 is inclined toward the center direction of one air filter 2 close to the curved plate body 41 from top to bottom, the part of the flow-through section 411 extends to the right under the air filter 2 fixed thereto, and the through hole 4111 is opened on the flow-through section 411. The flow-through sections 411 of the two curved plate bodies 41 form a flaring structure, and the arrangement of the inclined flow-through sections 411 can lead the heated air vertically blown out of the air filter 2 to be turned and enter the transition cavity 42.
Referring to fig. 7, the drainage section 412 is also inclined, and the inclination direction of the drainage section 412 is opposite to that of the flow-through section 411, that is, the drainage section 412 is inclined from top to bottom toward the center direction away from one air filter 2 near the curved plate body 41. The flow-through sections 411 of the two curved plate bodies 41 form a flaring structure, and the flow-guiding sections 412 form a necking structure, so that the heated gas entering the transition cavity 42 is mixed and guided towards the opening 43. Meanwhile, due to the inclined arrangement of the drainage section 412, the air flow outside the transition cavity 42 also stably flows downwards along the outer side of the drainage section 412 in an inclined manner under the guidance of the drainage section 412, and finally is stably converged with the air flow flowing out of the opening 43 of the necking structure, so that the two air flows are consistent in temperature, and the phenomenon of uneven temperature and local air flow disturbance caused by uneven air flow and temperature in the whole transmission cavity can be avoided, the cleanliness of the wafer transmission device is effectively improved, and the production efficiency is improved.
In one embodiment, the flow-guiding section 412 may also be arranged vertically, where the width of the opening 43 in the X-direction is larger than the width of the gap 21 in the X-direction, but may also function to heat the gas in the mixing transition chamber 42.
In one embodiment, the flow guiding section 412 and the flow penetrating section 411 are connected by an arc section 413, the arc section 413 realizing a smooth transition of the flow guiding section 412 and the flow penetrating section 411.
The length of the bent plate body 41 in the Y direction is not smaller than the width of the air filters 2 in the Y direction, so that a transition cavity 42 is always arranged below the gaps 21 between the adjacent air filters 2, the guiding of the heating gas in the Y direction is ensured, and the heating air is guided to the wafer inlet and outlet.
Referring to FIG. 7, to allow more heated gas to enter the transition chamber 42, the holes 4111 are arrayed in the flow section 411 such that the greater the number of holes 4111, the more heated gas can enter the transition chamber 42.
In one embodiment, the through holes 4111 may be circular or polygonal, and the through holes 4111 form a gas path for the heated gas to pass through, the gas path extending vertically through the drain section 412.
Of course, in another embodiment, the gas path may be vertically downward, and more heated gas may be introduced into the transition chamber 42, mixed in the transition chamber 42, and discharged from the opening 43.
The two curved plate bodies 41 can be connected into a whole through a fixing plate fixed at the upper end, namely, the upper ends of the two through-flow sections 411 of the steady flow temperature adjusting component 4 are jointly fixed with one fixing plate. Referring also to fig. 6, the two curved plate bodies 41 are of a split structure, and are not connected.
In this embodiment, a temperature control mechanism 3 is added above the air filter 2, and the temperature control mechanism 3 can adjust the air temperature, so that the air entering the air filter 2 reaches the preset temperature, and the temperature of the transmission cavity 11 is maintained to be stable, thereby meeting the temperature requirement of wafer transmission. Meanwhile, a steady flow temperature adjusting component 4 is arranged between the adjacent air filters 2, and the heated gas heated by the temperature control mechanism 3 is guided to the lower part of a gap 21 between the two adjacent air filters 2, so that the uniformity is higher while the temperature of the cavity of the transmission cavity reaches the requirement, and the transmission requirement is met.
The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and to implement the same, but are not intended to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a wafer transmission device, includes the transmission casing, the transmission casing has set gradually two at least air cleaner along first direction, form a transmission cavity between air cleaner's bottom and the transmission casing, be provided with manipulator and prealignment mechanism in the transmission cavity, the one end butt joint of the second direction of transmission casing has a plurality of wafer loading device that lie in the transmission cavity outside, form a place cavity that directly switches on with outside air between air cleaner's top and the transmission casing, its characterized in that: the placing cavity is internally provided with a temperature control mechanism, and the temperature control mechanism comprises:
the temperature control shell is divided into cooling cavities and heating cavities which are alternately arranged along a first direction, the heating cavities are arranged corresponding to the air filters, the inlets of the air filters are communicated with the corresponding heating cavities only, the heating cavities can heat air in the heating cavities, the cooling cavities are positioned between the two heating cavities and are directly communicated with the placing cavities, and the cooling cavities can cool the air in the cooling cavities;
the communication port is used for conducting the cooling cavity and the adjacent heating cavity, and cooling air in the cooling cavity enters the heating cavities on two sides from the communication port;
and gaps are formed between two adjacent air filters, a steady flow temperature adjusting component positioned in the transmission cavity is arranged at each gap, and the steady flow temperature adjusting component is used for guiding heating gas blown out of the air filters to the position right below the gaps.
2. The wafer transfer apparatus according to claim 1, wherein: the top of control by temperature change casing has offered the air inlet that corresponds with cooling cavity position, cooling cavity is close to air inlet department and is provided with the cooling tube, it has the coolant liquid to flow in the cooling tube.
3. The wafer transfer apparatus according to claim 2, wherein: the height position of the communication port is lower than that of the cooling pipe, and a heating pipe is arranged at the position of the heating cavity close to the communication port.
4. The wafer transfer apparatus according to claim 2, wherein: each cooling pipe is communicated with Wen Kongda positioned outside the temperature control shell through a water conveying pipe, the temperature control tower is positioned outside the temperature control shell and forms a loop with each cooling pipe, and cooling liquid is stored in Wen Kongda and is subjected to cooling treatment.
5. A wafer transfer apparatus according to claim 3, wherein: the cooling chamber is internally provided with a condensing disc, the condensing disc is positioned below the cooling pipe, the orthographic projection of the cooling pipe on the condensing disc is smaller than the area of the condensing disc, and part of the condensing disc extends out of the cooling chamber and passes through the communication port to extend to the position right below the heating pipe.
6. The wafer transfer apparatus according to claim 2, wherein: the air inlet is provided with a filter screen fixedly connected with the temperature control shell.
7. The wafer transfer apparatus according to any one of claims 1 to 6, wherein: the steady flow temperature adjusting assembly comprises two curved plate bodies, and the two curved plate bodies are arranged at intervals along a first direction;
a transition cavity is formed between the two curved plate bodies, an opening is arranged under the transition cavity, the part of the transition cavity extends to the position right under the air filter, a through hole is formed in the curved plate body, and heating gas vertically blown downwards by the air filter enters the transition cavity from the through hole and is blown out from the opening after being mixed in the transition cavity.
8. The wafer transfer apparatus of claim 7, wherein: the two curved plate bodies are distributed in a mirror image mode, the curved plate bodies comprise flow-through sections, the upper ends of the flow-through sections are fixedly connected with the end portions, close to one air filter, of the other air filter, the flow-through sections incline towards the center direction of the air filter for fixing the curved plate bodies from top to bottom, parts of the flow-through sections extend to the position right below the air filter for fixing the same, and through holes are formed in the flow-through sections.
9. The wafer transfer apparatus of claim 8, wherein: the bent plate body further comprises a drainage section positioned below the flow-through section, and an opening is formed between the drainage sections of the two bent plate bodies;
the drainage section is obliquely arranged and the oblique direction is opposite to that of the flow-through section, or the drainage section is vertically arranged.
10. The wafer transfer apparatus of claim 7, wherein: the length of the bent plate body in the second direction is not smaller than the width of the air filter in the second direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311710963.6A CN117410213B (en) | 2023-12-13 | 2023-12-13 | Wafer transmission device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311710963.6A CN117410213B (en) | 2023-12-13 | 2023-12-13 | Wafer transmission device |
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| CN117410213A CN117410213A (en) | 2024-01-16 |
| CN117410213B true CN117410213B (en) | 2024-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202311710963.6A Active CN117410213B (en) | 2023-12-13 | 2023-12-13 | Wafer transmission device |
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| JPH10303285A (en) * | 1997-04-30 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | Substrate cooler and substrate treatment device equipped with the cooler |
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| CN102612631A (en) * | 2009-08-14 | 2012-07-25 | 莱博德光学有限责任公司 | Device and treatment chamber for thermally treating substrates |
| CN103021916A (en) * | 2012-12-05 | 2013-04-03 | 沈阳拓荆科技有限公司 | Wafer transmission system |
| CN113972158A (en) * | 2021-10-26 | 2022-01-25 | 上海广川科技有限公司 | Wafer transmission system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5178639A (en) * | 1990-06-28 | 1993-01-12 | Tokyo Electron Sagami Limited | Vertical heat-treating apparatus |
| JPH09205047A (en) * | 1996-01-26 | 1997-08-05 | Tokyo Electron Ltd | Processing system |
| JPH10303285A (en) * | 1997-04-30 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | Substrate cooler and substrate treatment device equipped with the cooler |
| JP2000353650A (en) * | 1999-06-09 | 2000-12-19 | Tokyo Electron Ltd | Substrate processing apparatus |
| JP2003332230A (en) * | 2000-09-13 | 2003-11-21 | Tokyo Electron Ltd | Device and method for treating substrate |
| CN102612631A (en) * | 2009-08-14 | 2012-07-25 | 莱博德光学有限责任公司 | Device and treatment chamber for thermally treating substrates |
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| CN113972158A (en) * | 2021-10-26 | 2022-01-25 | 上海广川科技有限公司 | Wafer transmission system |
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| CN117410213A (en) | 2024-01-16 |
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