JP2001077014A - Substrate transfer device and sustem for coating- development process - Google Patents

Abstract

PROBLEM TO BE SOLVED: To precisely control time until an exposed substrate is heat-treated and to form an uniform line width. SOLUTION: In an interface part 5, a transfer device 110 is arranged so that it faces a second cooling processor group 80 in a processing station 3, a heat processor group 112 where heat treatment devices are arranged in multiple stages is arranged in one side so that the transfer device 110 is interposed therebetween, and peripheral exposure equipment, a buffer cassette and a wafer- holding part 115 are successively arranged in lamination on the other side from the top. A secondary transfer body 116 is arranged between the wafer holding part 115 and an exposure device 4, and a wafer W is carried in/out between an in-stage 401 and an out-stage 402 in the exposure device 4 through the body 116.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating / development apparatus for applying and developing a resist on a substrate such as a semiconductor wafer or a glass substrate and an exposure apparatus for exposing the resist-coated substrate. The present invention relates to a substrate delivery device to be used and a coating and developing system provided with the substrate delivery device.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of a semiconductor device, a resist is applied to a substrate such as a semiconductor wafer (hereinafter, referred to as "wafer") and a predetermined pattern is exposed. Is supplied with a developing solution to perform the developing process.

Conventionally, these processes have been performed by a system in which a coating and developing apparatus for performing resist coating and developing processing on an exposure apparatus is connected. Such a coating and developing apparatus includes a series of processing necessary for the coating and developing processing of the wafer, for example, a hydrophobic treatment (adhesion processing) for improving the fixability of the resist, a resist coating processing for applying the resist, and a resist coating after the resist coating. A process for individually performing various processes such as a heating process for heating the wafer to cure the resist, a heating process for heating the exposed wafer at a predetermined temperature, and a developing process for developing the exposed wafer. A unit is provided, and a wafer transfer device transfers a wafer between these processing units. An interface section for transferring a wafer is arranged between the coating and developing apparatus and the exposure apparatus, and the wafer coated with the resist by the coating and developing apparatus is exposed through the interface section. The wafer transferred to the apparatus and exposed by the exposure device is transferred to the coating and developing apparatus via the interface unit.

By the way, in order to make the wiring pattern formed on the wafer uniform and uniform in line width, in the above-described series of processes, particularly, the time from the exposure of the wafer by the exposure apparatus to the heat treatment is required. It is important to manage.

[0005]

However, a wafer transfer apparatus that receives a wafer exposed by an exposure apparatus via an interface unit and transfers the wafer to a heating processing unit as described above transfers a wafer between various processing units. Therefore, there is a problem that the wafer after the exposure may not be immediately conveyed to the heat treatment unit and may be kept waiting.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is possible to accurately control the time required to heat-treat a substrate after exposure and to form a substrate having a uniform line width. It is an object to provide a delivery device and a coating and developing processing system.

[0007]

In order to achieve the above object, a first aspect of the present invention is to provide a coating and developing apparatus for applying a resist to a substrate and developing the exposed substrate, and a method for applying the resist to the substrate. Disposed between an exposure apparatus that exposes the substrate, and a substrate transfer apparatus that transfers the substrate to and from these apparatuses, a heat treatment unit that has a heating unit that heats the substrate, and the heat transfer unit that is loaded from the exposure apparatus. A first transport unit that transports the substrate directly to the heat treatment unit and transports the substrate carried in from the coating and developing apparatus side to the exposure apparatus.

According to a second aspect of the present invention, there is provided a coating and developing apparatus for applying a resist to a substrate and developing the exposed substrate, and an exposure apparatus for exposing the resist-coated substrate. A substrate transfer device for transferring a substrate to and from these devices, a first holding unit that can carry out the substrate to the exposure apparatus side, and receives and temporarily holds the substrate before exposure, It is arranged on the same plane as the holding unit, and the substrate can be carried in from the exposure apparatus side,
A second holding unit that receives and temporarily holds the substrate after the exposure, a heat treatment unit that has a heating unit that heats the substrate, a first holding unit that is adjacent to the coating and developing processing apparatus, and A first transfer unit that is disposed so as to be surrounded by the holding unit and the heat treatment unit and that transfers a substrate between the coating and developing apparatus, the first holding unit, the second holding unit, and the heat treatment unit; And the first holding unit, the substrate can be carried out, the substrate can be carried in and out of the second holding unit, and the substrate before exposure in the exposure apparatus is loaded. A second transport unit capable of loading and unloading the substrate between an in-stage on which the substrate is placed and an out-stage on which the exposed substrate is placed.

According to a third aspect of the present invention, there is provided a coating and developing system connected to an exposure apparatus for exposing a substrate coated with a resist, wherein the coating is performed by applying a resist to the substrate and developing the exposed substrate. A heat treatment section comprising a development processing device, a substrate delivery device disposed between the exposure device and the coating and development processing device, wherein the substrate delivery device has a heating section for heating the substrate, and the exposure device The substrate brought in from is directly transferred to the heat treatment section,
A transport unit that transports the substrate carried in from the coating and developing apparatus side to the exposure apparatus.

According to the present invention, the exposed substrate is directly transferred to the heat treatment section via the transfer section of the substrate transfer device and subjected to the heat treatment, so that the exposed substrate is not made to wait. Immediately, it can be conveyed to a heat treatment part and heat-treated. Therefore, it is possible to accurately manage the time until the substrate after the exposure is heated,
A uniform line width can be formed.

[0011]

Embodiments of the present invention will be described below with reference to the drawings.

1 to 3 show the appearance of a coating and developing system according to an embodiment. FIG. 1 shows a plan view, and FIGS. 2 and 3 show a side view.

The coating and developing system 1 includes, for example, 2
A cassette station 2 for loading and unloading five wafers W from the outside to the coating and developing processing system 1 in cassette units, and for loading and unloading wafers W to and from the cassette C.
A processing station 3 in which various single-wafer processing apparatuses for performing predetermined processing on a wafer W in a coating and developing processing step are arranged in multiple stages, and an exposure apparatus 4 provided adjacent to the processing station 3 And an interface unit 5 serving as a substrate transfer device for transferring a wafer W between them.

In the cassette station 2, a plurality of cassettes C are positioned at the position of the positioning protrusion 10 a on the cassette mounting table 10 in the X direction (vertical direction in FIG. 1) with the entrance of the wafer W toward the processing station 3. It can be placed in a line along the line. The wafer carrier 11 that can move in the arrangement direction of the cassette C (X direction) and the arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction) is movable along the transfer path 12. , Each of the cassettes C can be selectively accessed.

The wafer carrier 11 is also rotatable in the θ direction, and includes a first cooling processing unit group 70 described later.
Extension device 74 belonging to the multi-stage unit section and alignment device 92 belonging to the first heat treatment device group 90
Is configured to allow access to

In the processing station 3, a resist coating apparatus group 20 is arranged on the front side, and a development processing apparatus group 30 is arranged on the back side. Developing device group 30 on front side
Of course, the resist coating device group 20 may be arranged on the back side.

As shown in FIGS. 2 and 3, a resist coating apparatus group 20 places a wafer W on a spin chuck in a cup CP, applies a resist solution, and applies a resist coating process to the wafer W. Coating devices 21 and 22 are arranged in parallel.
The resist coating devices 23 and 24 are stacked on the upper stage 2.

The developing apparatus group 30 includes a developing apparatus 31 and a developing apparatus 31 for supplying a developing solution by placing the wafer W on a spin chuck in the cup CP and performing a developing process on the wafer W.
2 are arranged in parallel.
On the upper stage of 32, the development processing devices 33 and 34 are stacked.

At the center of the processing station 3, a transfer table 40 on which the wafer W can be placed is provided.

The resist coating device group 20 and the development processing device group 30 are opposed to each other with the transfer table 40 interposed therebetween, and a first transfer device 50 is provided between the resist coating device group 20 and the transfer table 40. A second transfer device 60 is provided between the development processing device group 30 and the transfer table 40.

The first transport device 50 and the second transport device 60 have basically the same configuration. The configuration of the first transport device 50 will be described with reference to FIG.
Is provided with a wafer transfer means 54 which can be moved up and down (Z direction) inside a cylindrical support 53 composed of integral wall portions 51 and 52 which are connected to each other at an upper end and a lower end. The cylindrical support 53 is connected to a rotating shaft of a motor 55, and rotates integrally with the wafer transfer means 54 about the rotating shaft by the rotational driving force of the motor 55. Therefore, the wafer transfer means 54 is rotatable in the θ direction.

On the transfer base 56 of the wafer transfer means 54, a plurality of, for example, two tweezers 57 and 58 as a holding member for holding the wafer W are vertically provided.
Each of the tweezers 57 and 58 has basically the same configuration, and has a shape and size that allow it to pass through a side opening between the two walls 51 and 52 of the tubular support 53. The tweezers 57 and 58 can be freely moved in the front-rear direction by a motor (not shown) built in the transport base 56. In addition, the tweezers 57, 5 and 5
Tweezers 67 and 68 having the same function and configuration as 8
Is provided.

On both sides of the first transporting device 50, a first cooling processing unit group 70 and a second cooling processing unit group 80 including various cooling system processing units are arranged near the resist coating unit group 20, respectively. On both sides of the two-conveying device 60, a first heat processing device group 90 and a second heat processing device group 100 including various heating system processing devices are arranged near the development processing device group 30, respectively. The first cooling processing unit group 70 and the first heating processing unit group 90 are arranged on the cassette station 2 side, and the second cooling processing unit group 80 and the second heating processing unit group 100 are arranged on the interface unit 5 side. I have.

Here, the configuration of the first cooling processing unit group 70 and the first heating processing unit group 90 will be described with reference to FIG. 2 where the processing station 3 is viewed from the cassette station 2 side. Are cooling devices 71 and 72 for cooling the wafer W at a predetermined temperature, an alignment device 73 for aligning the position of the wafer W, an extension device 74 for holding the wafer W on standby, and cooling devices 75, 76, 77 and 78. Are stacked in order from the bottom, for example, in eight stages. The first heat treatment device group 90 includes an adhesion device 91 for improving the adhesion between the resist and the wafer W, an alignment device 92, an extension device 93, a pre-baking device 94 for heating the resist coated wafer W, 95, post-baking devices 96, 97 for heating the wafer W after the development process,
98 are stacked in order from the bottom, for example, in eight stages.

The configuration of the second cooling processing unit group 80 and the second heating processing unit group 100 will be described with reference to FIG. 3 in which the processing station 3 is viewed from the interface unit 5 side.
The cooling processing device group 80 includes cooling devices 81 and 82,
Alignment device 83 and extension device 84
And cooling processing devices 85, 86, 87, and 88 are stacked in order from the bottom, for example, in eight stages. The second heat treatment apparatus group 100 includes pre-baking apparatuses 101 and 102,
Post-exposure baking apparatuses 103 and 104 for heating the wafer W after the exposure processing and post-baking apparatuses 105, 106 and 107 are stacked in, for example, seven stages from the bottom.

The interface unit 5 includes a transport device 11
0 is the second cooling processing unit group 8 in the processing station 3
It is arranged so as to face 0. FIG. 5 is a view of the interface unit 5 as viewed from the side. In the interface unit 5, a heat treatment apparatus group 112 having heat treatment apparatuses 111 arranged in multiple stages is arranged on one side so as to sandwich the transfer apparatus 110. And the other is a peripheral exposure device 11
3. The buffer cassette 114 and the wafer holding unit 115 are sequentially stacked from the top.

The transfer device 110 has basically the same configuration as the first transfer device 50 (second transfer device 60) shown in FIG. 4, and therefore moves the wafer W in the vertical direction (Z direction). The alignment device 83 and the extension device 84 of the second cooling processing device group 80 in the processing station 3 disposed around the processing device 3 and the heat treatment device 111, the peripheral exposure device 1
13. The wafer W can be transferred between the buffer cassette 114 that accommodates, for example, 25 wafers W in the vertical direction, and the wafer holding unit 115.

FIG. 6 is a plan view of the above-described heat treatment apparatus 111, and FIG. 7 is a sectional view thereof.

As shown in these figures, as shown in FIG.
1 includes a heat treatment chamber 341 having a hot plate 343 and a cooling treatment chamber 342 provided adjacent to the heat treatment chamber 341 as a temperature control unit for controlling the temperature of the substrate. This heat treatment apparatus 111
A first gate shutter 344 that is opened and closed when the wafer W is transferred to and from the transfer device 110;
A second gate shutter 345 for opening and closing between the heating processing chamber 341 and the cooling processing chamber 342, and a ring shutter 346 raised and lowered together with the second gate shutter 345 while surrounding the wafer W around the hot plate 343. And a third gate shutter 361 that is opened and closed when transferring the wafer W to and from a secondary transfer body 116 described below. Further, the heating plate 343 is provided with three lift pins 347 for placing the wafer W and moving it up and down.

An elevating mechanism 348 for elevating and lowering the three lift pins 347 is provided below the heat treatment chamber 341.
The ring shutter 346 is connected to the second gate shutter 34.
, A first gate shutter 344 and a third gate shutter 361
And an elevating mechanism 350 for elevating and opening and closing. The heat treatment chamber 341 is configured to be evacuated through an exhaust pipe 351.

The heat processing chamber 341 and the cooling processing chamber 342 are communicated through a communication port 352, and a cooling plate 353 for mounting and cooling the wafer W is moved along a guide plate 354 by a moving mechanism 355. , So as to be movable in the horizontal direction. Accordingly, the cooling plate 353 can enter the heating processing chamber 341 through the communication port 352, and receives the wafer W heated by the heating plate 343 in the heating processing chamber 341 from the lift pins 347 and cools it. After the wafer W is carried into the processing chamber 342 and cooled, the wafer W is returned to the lift pins 347.

FIG. 8 is a sectional view showing the structure of the above-described wafer holding unit 115.

As shown in FIG. 8, the wafer holding portion 11
In No. 5, a cooling device 321 as a temperature control table for controlling the temperature of the wafer W to a temperature near normal temperature is disposed at the lower stage. The cooling device 321 includes a cooling mounting table 325 capable of cooling the wafer W mounted on the cooling device 321, and a cooling device 325 formed to be vertically movable by driving a cylinder 327 from a hole 326 provided in the cooling mounting table 325. Book lifting pin 3
28 are provided. In addition, a circulation path 329 through which constant-temperature water or the like whose temperature has been adjusted to 23 ° C., for example, is provided inside the cooling mounting table 325. by this,
The wafer W mounted on the cooling mounting table 325 is cooled. Further, on the upper part of the cooling device 321 at the uppermost stage, there are provided upper and lower mounting tables 330, 330 on which the wafer W can be mounted. The cooling device 321 temporarily holds the wafer W before exposure, and the mounting tables 330, 330
The wafer W after the exposure and after the completion of the heating / cooling process is temporarily held.

As shown in FIG. 1, the heat treatment apparatus group 112
A secondary carrier 116 that can move in the vertical direction (Z direction) and the X direction, and that can rotate in the θ direction, can move along the transport path 117 between the wafer holder 115 and the exposure device 4. Yes, each heat treatment device 11 of the heat treatment device group 112
1. Cooling device 321 for wafer holder 115, exposure device 4
Stage 4 on which a wafer W before exposure is placed
The wafer W is carried in and out between the wafer W and the out stage 402 on which the exposed wafer W is placed.

The coating and developing system 1 according to the embodiment of the present invention is configured as described above. Next, the operation of the coating and developing system 1 will be described.

First, in the cassette station 2, the wafer carrier 11 accesses the cassette C and takes out one unprocessed wafer W. Next, the wafer W is transferred by the wafer transfer body 11 to the alignment device 92 of the first heat treatment device group 90. The wafer W that has been aligned by the alignment device 92 is transferred by the second transfer device 60 to the adhesion device 91 belonging to the same first heat treatment device group 90. Next, after the completion of the hydrophobic treatment, the wafer W is transferred to the transfer table 40 by the second transfer device 60.

Next, the wafer W is transferred from the transfer table 40 to the first cooling processing unit group 70 by the first transfer device 50, and the cooling unit 7 of the first cooling processing unit group 70, for example.
2 and a cooling process is performed.

The wafer W that has been subjected to the predetermined cooling processing by the cooling device 72 is transferred to the resist coating device group 20 by the first transfer device 50.

The wafer W transferred to the resist coating device group 20 is carried into, for example, a resist coating device 21, where a resist film is formed. Then, the wafer W on which the resist film is formed is then transferred to the transfer table 40 by the first transfer device 50.

The wafer W transferred to the transfer table 40 is
The second heat treatment device group 10 is now set by the second transfer device 60.
Transported to zero. Then, it is carried into, for example, a pre-baking device 101 belonging to the second heat treatment device group 100 and subjected to a predetermined heat treatment.

The wafer W after the completion of the heat treatment is transferred by the second transfer device 60 to the second cooling processing device group 80. Then, it is carried into, for example, a cooling device 85 of the second cooling processing device group 80 and subjected to a cooling process. The wafer W that has been subjected to the cooling process in the cooling device 85 is then carried into the extension device 84.

The wafer W carried into the extension device 84 is transferred by the transfer device 110 to the interface unit 5.
First, it is carried into the peripheral exposure device 113 in the interface section 5 and subjected to peripheral exposure processing.

The wafer W that has been subjected to the peripheral exposure processing is once stored in the buffer cassette 114 by the transfer device 110.

The wafer W stored in the buffer cassette 114 is transferred to the wafer holding unit 115 by the transfer device 110.
Is cooled to a temperature around normal temperature, for example, about 23 ° C. Thereby, when the wafer W is subsequently transferred into the exposure apparatus 4, the exposure apparatus 4
The temperature inside will not be disturbed.

Cooling device 32 in wafer holder 115
The wafer W whose temperature has been adjusted to around normal temperature in Step 1
The wafer 6 is placed on the in-stage 401 of the exposure apparatus 4 by 6.

The wafer W placed on the in-stage 401 is subjected to exposure processing in the exposure device 4, and is placed on the out-stage 402 when the exposure processing is completed.

The wafer W placed on the out stage 402 is directly transferred to any one of the heat treatment apparatuses 111 in the heat treatment apparatus group 112 by the secondary transfer body 116. Here, the control unit 362 sends the wafer W
An exposure end signal indicating the timing at which the wafer W has been exposed is input. Based on this signal, the transfer by the secondary transfer body 116 is performed so that the time from the end of the exposure to the transfer to the heat treatment apparatus 111 is always constant. The operation is controlled.
For example, even at the timing when the secondary transfer body 116 transfers the wafer from the cooling device 321 in the wafer holding unit 115 to the in-stage 401 in the exposure device 4, the control unit 362 interrupts the operation (interrupts the operation). Then, the wafer W is transferred from the outstage 402 to the heat treatment apparatus group 112 with respect to the secondary transfer body 116 so that the time from the end of exposure to the transfer to the heat treatment apparatus 111 is always constant. Is controlled.

Wafer W transferred to heat treatment apparatus 111
Is subjected to heat treatment and temperature control to room temperature.

The wafer W which has been subjected to the heat treatment and the temperature control to the ordinary temperature is carried into the extension device 84 in the processing station 3 by the transfer device 110.

The wafer W carried into the extension device 84 is transferred to the transfer table 40 by the first transfer device 50. Thereafter, the wafer W is transferred from the transfer table 40 by the second transfer device 60 to, for example, the developing device 31 in the developing device group 30 and subjected to a predetermined developing process.

The wafer W on which the developing process has been completed is carried by the second transfer device 60 into, for example, the post-baking device 105 in the second heat processing device group 100 and subjected to the heat process after the developing process.

The wafer W that has been subjected to the heat treatment in the post-baking device 105 is transferred to the transfer table 40 by the second transfer device 60.

The wafer W transferred to the transfer table 40 is
Thereafter, the first cooling processing device group 70 is
, For example, is carried into the cooling device 71 and cooled.

Then, the cooled wafer W is carried into the extension device 74 and stands by there. Then, the wafer is unloaded from the extension device 74 by the wafer carrier 11 and stored in the cassette C on the cassette mounting table 10. Thus, a series of coating and developing processes for the wafer W is completed.

As described above, in the coating and developing treatment system 1 of the present embodiment, the exposed wafer W can be immediately transferred to the heat treatment apparatus 111 without waiting and subjected to the heat treatment. Therefore, the time until the wafer W after the exposure is subjected to the heat treatment can be accurately controlled, and a uniform line width can be formed.

In this embodiment, the heat treatment apparatus 1
Since the cooling chamber 342 is provided integrally with the heating chamber 341 in addition to the heating chamber 341, the temperature of the wafer W after the heating processing can be immediately adjusted, so that the temperature can be accurately controlled. This also enables a uniform line width to be formed.

Further, in the present embodiment, the processing station 3, the wafer holding unit 115, and the heat treatment unit 111 are arranged around the transfer unit 110 in the interface unit 5, so that the transfer unit 110 moves in the XY directions. This is unnecessary, and the speed of the transfer device 110 can be increased.

Next, another embodiment of the present invention will be described.

FIG. 9 is a plan view showing the configuration of a coating and developing system 370 according to another embodiment of the present invention.

In the coating / developing processing system 370 shown in FIG. 9, a cooling device as a first holding unit capable of carrying out the wafer W to and from the secondary transfer body 116 and receiving and temporarily holding the wafer W before exposure is provided. The wafer W can be carried in between the 371 and the secondary transfer body 116, and a mounting table 372 as a second holding unit that receives and temporarily holds the exposed wafer W is arranged on the same plane. . The transfer device 110 is configured to transfer the wafer W between the cooling device 371, the heat treatment device 111, and the mounting table 372.

The coating and developing system 3 according to the present embodiment
In 70, in particular, since the cooling device 371 and the mounting table 372 are arranged on the same plane, the stroke for vertically transferring the wafer W in the secondary transfer unit 116 is reduced, and the size of the secondary transfer unit 116 is reduced. Speed and speed can be improved.

In the present embodiment, the mounting table 37
2 to the heat treatment apparatus 111 from the out stage 402
The mounting table 372 plays a role as a timing buffer, so to speak,
By appropriately controlling the transfer timing of the secondary transfer body 116 and the transfer device 110, the time during which the wafer W is transferred from the out-stage 402 to the heat treatment device 111 can be easily made constant.

Next, still another embodiment of the present invention will be described.

FIG. 10 is a plan view showing a configuration of a coating and developing system 380 according to this embodiment.

In this system, the transfer device 110 can directly access not only the processing station 3, the heat treatment device group 112 and the wafer holding unit 115 but also the in-stage 401 and the out-stage 402. is there. The pre-exposure wafer W carried in from the processing station 3 passes through the transfer device 110, the wafer holding unit 115 and the transfer device 110,
01 and transferred from the outstage 402 to the heat treatment apparatus group 112 via the transfer apparatus 110, and then to the processing station 3 via the transfer apparatus 110. In this embodiment, similarly to the first embodiment, the control of transferring the exposed wafer W to the heat treatment apparatus group 112 via the transfer apparatus 110 is performed preferentially, and after the exposure is completed, the substrate is loaded into the heat treatment apparatus. Control may be performed so that the time until the time is constant.

In the above embodiment, an example in which the wafer W is used as a substrate has been described. However, the substrate used in the present invention is not limited to this, and may be, for example, an LCD substrate.

[0067]

As described above, according to the present invention,
Since the exposed substrate can be immediately transferred to the heat treatment section and subjected to heat treatment without waiting, the time until the exposed substrate is heat-treated can be accurately controlled, and the uniform line width can be obtained. Can be formed.

[Brief description of the drawings]

FIG. 1 is a plan view of a coating and developing system according to an embodiment of the present invention.

FIG. 2 is a left side view of a processing station in the coating and developing processing system shown in FIG.

FIG. 3 is a right side view of a processing station in the coating and developing processing system shown in FIG.

FIG. 4 is a perspective view illustrating a configuration of a first transport device in the coating and developing processing system illustrated in FIG. 1;

FIG. 5 is a right side view of an interface unit in the coating and developing processing system shown in FIG.

FIG. 6 is a plan view of a heat treatment apparatus in the coating and developing system shown in FIG.

7 is a sectional view of a heat treatment apparatus in the coating and developing system shown in FIG.

8 is a cross-sectional view illustrating a configuration of a wafer holding unit in the coating and developing processing system illustrated in FIG.

FIG. 9 is a plan view showing a configuration of a coating and developing processing system according to another embodiment of the present invention.

FIG. 10 is a plan view showing a configuration of a coating and developing processing system according to still another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Coating / developing processing system 3 Processing station 4 Exposure device 5 Interface unit 110 Transport device 111 Heat treatment device 112 Heat treatment device group 113 Peripheral exposure device 114 Buffer cassette 115 Wafer holding unit 116 Secondary transport body 321 Cooling measure 330 Mounting table 341 Heating processing chamber 342 Cooling processing chamber 401 In-stage 402 Out-stage W wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 567

Claims (14)

[Claims] 1. A coating / developing apparatus for applying a resist to a substrate and developing the exposed substrate, and an exposure apparatus for exposing the substrate coated with the resist, the apparatus being disposed between the coating and developing apparatus. In a substrate transfer apparatus for transferring a substrate, a heat treatment unit having a heating unit for heating the substrate, and a substrate directly carried in from the exposure apparatus are directly conveyed to the heat treatment unit and carried in from the coating and developing processing apparatus side. And a first transfer unit for transferring the obtained substrate to the exposure apparatus. 2. The substrate transfer apparatus according to claim 1, wherein: a means for inputting an exposure end signal output from the exposure apparatus; and a step in which the substrate is exposed by the exposure apparatus based on the exposure end signal. A substrate transfer device, further comprising means for controlling the first transfer unit so that the time from transfer to the heat treatment unit is constant. 3. The substrate transfer apparatus according to claim 1, further comprising a holding unit that receives and temporarily holds at least the substrate before exposure. 4. One of claims 1 to 3
3. The substrate transfer apparatus according to claim 1, wherein the heat treatment unit has a temperature control unit for controlling the temperature of the substrate heated by the heating unit, integrally with the heating unit. 5. The substrate transfer device according to claim 3, wherein the coating and developing treatment device is disposed adjacent to the coating and developing treatment device and between the holding unit and the heat treatment unit. The second transporting the substrate to and from the heat treatment unit
A substrate transfer device, further comprising: 6. The temperature control table according to claim 3, wherein the holding unit receives the substrate before exposure from the transport unit, temporarily holds the substrate, and adjusts the temperature of the substrate to a temperature near normal temperature. A substrate transfer device, comprising a plurality of substrates in a vertical direction. 7. One of claims 1 to 6
3. The substrate transfer apparatus according to claim 1, wherein the heat treatment units are vertically arranged in multiple stages. 8. The substrate transfer device according to claim 3, wherein the holding unit includes: a peripheral exposure unit that peripherally exposes the substrate before exposure; and a buffer unit that holds the peripherally exposed substrate in multiple stages in a vertical direction. Wherein the peripheral exposure section and the buffer section are capable of transferring a substrate to and from the transport section. 9. The method as claimed in claim 1, wherein:
In the substrate delivery device according to the item, between the exposure apparatus and the first transport unit, an in-stage on which a substrate before exposure in the exposure apparatus is mounted and an out-stage on which a substrate after exposure is mounted. A substrate transfer device, wherein a stage is arranged. 10. The method according to claim 1, wherein
2. The substrate transfer device according to claim 1, wherein the first transport section includes an in-stage on which a substrate before exposure in the coating and developing processing apparatus, the heat treatment section, and the exposure apparatus is mounted, and a substrate after exposure. A substrate transfer device, wherein the substrate transfer device is surrounded by an outstage to be placed, and is capable of transferring a substrate therebetween. 11. The substrate transfer apparatus according to claim 10, further comprising: a holding unit that is adjacent to the first transfer unit and that receives and temporarily holds at least the substrate before exposure, wherein the first transfer unit is A substrate transfer device capable of transferring a substrate to and from the holding unit. 12. A coating / development processing apparatus for applying a resist to a substrate and developing the exposed substrate, and an exposure apparatus for exposing the substrate coated with the resist, the apparatus being disposed between the coating and developing apparatus. A first holding unit that can carry out the substrate to the exposure apparatus side, and receives and temporarily holds the substrate before exposure, and the same plane as the first holding unit. A second holding unit which is disposed on the upper side, is capable of carrying in the substrate from the exposure apparatus side, and receives and temporarily holds the substrate after exposure, a heat treatment unit having a heating unit for heating the substrate, The coating / developing apparatus, the first holding unit, and the second holding unit are disposed so as to be adjacent to the developing device and surrounded by the first holding unit, the second holding unit, and the heat treatment unit. Part and the heat treatment part A first conveying section for conveying the substrate in a possible wherein the loading of the substrate between the first holding portion, is capable of further unloading of the substrate between the second holding portion,
And a second transport unit capable of loading and unloading a substrate between an in-stage on which the substrate before exposure is mounted and an out-stage on which the substrate after exposure is mounted in the exposure apparatus. Characteristic substrate transfer device. 13. The substrate transfer apparatus according to claim 12, wherein the substrate carried in from the exposure apparatus side is transferred to the heat treatment section via the second transfer section, the second holding section, and the first transfer section. A substrate delivery apparatus further comprising means for controlling the time until the transfer to be constant. 14. A coating and developing treatment system connected to an exposure device for exposing a substrate coated with a resist, the coating and developing treatment device for applying a resist to the substrate and developing the exposed substrate. A substrate transfer device disposed between the apparatus and the coating and developing processing device, wherein the substrate transfer device directly heats the substrate loaded from the exposure device, and a heat treatment unit having a heating unit for heating the substrate. A transport unit for transporting the substrate, which is transported to the heat treatment unit and the substrate loaded from the coating and developing apparatus side, to the exposure apparatus.