JP2001189369A - Substrate treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-treatment apparatus for accurately controlling the temperature in a liquid-treatment unit for treating liquid for a substrate near normal temperatures. SOLUTION: A first treatment unit group 13 (13a-13d) for treating liquid, and a second treatment unit group 14 (14a-14d) having a heating/temperature- control unit 10 (10a-10d), consisting of a heat-treating unit 20 (20a-20d) and a temperature-control treatment unit 18 (18a-18d) are arranged adjacently, so that the temperature-control treatment unit 18 is disposed at the side of the first treatment unit group 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention belongs to the technical field of, for example, semiconductor device manufacturing.

[0002]

2. Description of the Related Art In a photoresist process in a semiconductor device manufacturing process, for example, a semiconductor wafer W (hereinafter, referred to as a semiconductor wafer W) is used.
It is called “wafer W”. ), A resist solution is applied to the surface to form a resist film, and a developing solution is supplied to the wafer W after the pattern has been exposed to perform development processing. In performing such a series of processing, a coating and developing apparatus has conventionally been used.

This coating and developing apparatus includes a temperature control unit for controlling the temperature of the wafer W, a heating unit for heating the wafer W, a resist coating unit for applying a resist solution to the wafer W, and a developing process for the wafer W. Various processing units such as a development processing unit are provided. In order to make the entire coating and developing apparatus compact, multiple heating processing units and temperature control processing units are arranged in multiple stages together with the transport device as a whole to achieve space saving in the coating and developing processing apparatus. I have.

[0004]

As the diameter of the wafer W increases, all the processing units also increase in size. Therefore, in order to save space, it is necessary to further increase the arrangement of the processing units.

[0005] However, when the size of the heat treatment unit is increased, the amount of heat of the heat treatment unit also increases. Therefore, if the heat processing apparatus is arranged near one of the other processing units as one processing unit in the heat treatment unit group as in the past, another processing for performing liquid processing on the wafer W near normal temperature is performed. There is a possibility that temperature control in a unit, for example, a resist coating device or the like cannot be performed accurately. Then, when the temperature control is disturbed in these processing units, there arises a problem that the thickness of the resist film changes.

The present invention has been made in view of the above circumstances, and has as its object to provide a substrate processing apparatus capable of precisely controlling the temperature in a processing unit for performing liquid processing on a substrate.

[0007]

In order to solve the above-mentioned problems, a substrate processing apparatus according to the present invention comprises a first processing unit for supplying a predetermined liquid onto a substrate and performing a liquid processing, the first processing unit being stacked in multiple stages. And a second processing unit in which a processing unit group, a heating unit for performing a heating process on the substrate, and a temperature control unit for performing a temperature control process on the substrate are integrated adjacent to each other and stacked in multiple stages. A second processing unit group, and a transfer device for transferring a substrate between each of the first processing units and each of the second processing units, wherein the heating unit in each of the second processing units is provided. And the first processing unit group and the second processing unit group are arranged adjacent to each other while the temperature control unit of the temperature control unit is located on the first processing unit group side. It is characterized by.

According to the present invention, the first processing unit group for performing the liquid processing on the substrate at around normal temperature and the second processing unit group having a heating unit and a temperature control unit include a temperature control unit. First
Since the first processing unit group is disposed on the side of the second processing unit group, the thermal effect of the first processing unit group on the second processing unit group can be minimized. Thus, temperature control in the first processing unit group for performing processing on the substrate at around normal temperature can be performed precisely.

Further, a clean air supply unit for supplying clean air to the first processing unit group is provided, and the clean air supply unit exhausts gas from a lower portion of the first processing unit group, and discharges the gas. And circulates the discharged gas to blow out the temperature-controlled gas from the upper part of the first processing unit group. Further, the area where the first processing unit group is disposed and the second processing unit group are disposed. And a passage for circulating a gas exhausted from a lower part of the first processing unit group to an upper part thereof so as to separate the region from the first processing unit group.

According to such a configuration, the passage functions as a heat insulating means between the region where the first processing unit group is disposed and the region where the second processing unit group is disposed. In addition, since the gas is circulated in the passage, which is the heat insulating means, heat does not accumulate in the passage, and functions as an extremely good heat insulating means. Therefore, the passage having the above configuration prevents thermal influence from the second processing unit group to the first processing unit group, and controls the temperature in the first processing unit group for performing processing on the substrate at around normal temperature. Can be performed very precisely.

Further, a heat insulating wall is provided so as to separate an area where the first processing unit group is arranged from an area where the second processing unit group is arranged.

[0012] According to such a configuration, the heat insulating wall prevents the second processing unit group from thermally affecting the first processing unit group, so that the second processing unit performs processing on the substrate near normal temperature. Temperature control in one processing unit group can be performed extremely precisely.

[0013] The substrate processing apparatus of the present invention comprises: a first processing unit group in which a first processing unit for supplying a predetermined liquid onto a substrate and performing liquid processing is stacked in multiple stages; A processing liquid supply unit that is disposed adjacent to the group and supplies the predetermined liquid to each of the first processing units; a heating unit that performs a heat treatment on the substrate; A second processing unit group in which a second processing unit in which a temperature control unit for performing processing is integrated adjacent to and integrated with each other is stacked in multiple stages; and each of the first processing units and each of the second processing units And a transport device for transporting the substrate between, while the heating unit and the temperature control unit in each of the second processing units, the temperature control unit is located on the processing liquid supply unit side, Processing liquid supply unit and second processing unit Characterized by being located adjacent and.

According to the present invention, a processing solution is provided between a first processing unit group for performing liquid processing on a substrate at around normal temperature and a second processing unit group having a heating unit and a temperature control unit. The supply unit is disposed, and the temperature control unit is disposed so as to be located on the processing liquid supply unit side. That is, the temperature control processing unit and the processing liquid supply unit are interposed between the first processing unit group and the heating unit, and the first processing unit group and the processing liquid supply unit are connected to the second processing unit group. Thermal effects from the air can be minimized. Accordingly, it is possible to precisely control the temperature in the first processing unit group for performing processing on the substrate at around normal temperature, and also to control the temperature of the processing liquid supplied to the first processing unit group. It can be done easily.

Further, a clean air supply unit for supplying clean air to the first processing unit group is provided, and the clean air supply unit exhausts gas from a lower part of the first processing unit group, and the exhausted gas is discharged. The temperature-controlled gas is blown out from the upper part of the first processing unit group by circulating the gas, and the area where the processing liquid supply unit is arranged and the area where the second processing unit group is arranged And a passage for circulating the gas exhausted from the lower part of the first processing unit group to the upper part so as to separate the first processing unit group from the first processing unit group.

According to such a configuration, the passage functions as a heat insulating means between the region where the processing liquid supply unit is disposed and the region where the second processing unit group is disposed. In addition, since the gas is circulated in the passage, which is the heat insulating means, heat does not accumulate in the passage, and functions as an extremely good heat insulating means. Therefore, the passage having the above configuration prevents the second processing unit group from thermally affecting the first processing unit group and the processing liquid supply unit, and performs the first processing for performing processing on the substrate near normal temperature. The temperature control in the unit group can be performed very precisely, and the temperature of the processing liquid can be easily controlled.

Further, a heat insulating wall is provided so as to divide a region where the processing liquid supply unit is disposed, a region where the first processing unit group is disposed, and a region where the second processing unit group is disposed. It is characterized by having been done.

According to such a configuration, the heat insulating wall prevents the second processing unit group and the first processing unit group and the processing liquid supply unit from being thermally affected, so that the substrate can be processed near the room temperature. The temperature control in the first processing unit group for performing the processing can be performed extremely precisely, and the temperature of the processing liquid can be easily controlled.

The substrate processing apparatus according to the present invention comprises a first processing unit group in which a first processing unit for supplying a predetermined liquid onto a substrate and performing liquid processing is stacked in multiple stages, and the substrate is heated by A second processing unit group in which a second processing unit in which a heating unit for performing a process and a temperature control unit for performing a temperature control process on the substrate are integrated adjacent to each other is stacked in multiple stages; An exposure unit that performs an exposure process on the substrate on which the processing has been performed, wherein the substrate is waited in a temperature control unit of the second processing unit before the substrate is carried into the exposure unit.

According to the present invention, the temperature control section of the second processing unit can have a function as a standby place for waiting the substrate before exposure in addition to the function of performing the temperature control process. There is no need to provide a separate cassette for holding the.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG.
The first embodiment of the present invention will be described with reference to FIGS. 1 to 4 are views showing a coating and developing system according to an embodiment of the present invention. FIG. 1 is a plan view and FIG.
Is a front view. FIG. 3 is a cross-sectional view taken along the x direction of FIG. 1, and FIG. 4 is a cross-sectional view taken along the y direction of FIG.

As shown in FIG. 1, the coating and developing system 1 carries, for example, 25 wafers W into and out of the coating and developing system 1 from the outside in cassette units.
A cassette station 2 for loading / unloading wafers W into / from the cassette C;
A first processing station 3 in which various single-wafer processing units for performing predetermined processing are arranged in multiple stages, and a substantially similar processing to the first station disposed adjacent to the first processing station. Second processing station 4 of configuration
And an interface unit 5 for transferring a wafer W between exposure apparatuses (not shown) arranged adjacent to the second processing station 4. In the first processing station 3, a coating process of an antireflection film and a resist film is mainly performed on the wafer W, and in the second processing station 4, a development process of the exposed resist film is performed.

At the cassette station 2, a plurality of cassettes C are positioned at the positions of the positioning protrusions 10 a on the cassette mounting table 10 in the X direction (the vertical direction in FIG. 1) with the entrance of the wafer W toward the processing station 3. It can be placed in a line along the line. The wafer transfer body 11 movable in the arrangement direction of the cassette C (X direction) and the arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction) is movable along the transfer path 12. , Each of the cassettes C can be selectively accessed.

The wafer carrier 11 is also rotatable in the θ direction, and includes a first heating / temperature control processing unit group 14a as a second processing unit group in a first processing station 3, which will be described later. The temperature control unit (CPL) 18a of the first heating / temperature control unit 10a can be accessed.

As shown in FIGS. 1 and 2, in the first processing station 3, an anti-reflection film coating unit (BCT) is used as a first processing unit group for performing liquid processing on the front side.
Group 13a and resist film coating unit (CT) group 13b
Is provided. Anti-reflective coating unit (BCT)
The group 13a is configured by stacking three layers of antireflection film coating units (BCT) 16 that perform coating processing on the wafer W at around normal temperature in the z-axis direction. The resist film applying unit (CT) group 13b performs a coating process on the wafer W at around normal temperature.
17 are stacked in three stages in the z-axis direction.

At the center of the first processing station 3,
A first heating / temperature control processing unit group 14a and a second heating / temperature control unit group 14b are disposed as a second processing unit group with the transfer device 19a interposed therebetween. In the first heating / temperature control processing unit group 14a, the first heating / temperature control processing units 10a are configured to be stacked in eight stages in the z-axis direction,
In the second heating / temperature adjustment processing unit group 14b, the second heating / temperature adjustment processing units 10b are stacked in seven stages in the z-axis direction, and a transport unit (ST
L) are arranged and configured. The first and second heating / temperature control units 10a and 10b respectively perform temperature control units (CPL) 18a and 18 for performing temperature control on the wafer W.
b and a heat treatment unit (HP) 20a for performing a heat treatment,
20b are integrated adjacent to each other.

As shown in FIGS. 1 and 3, the first heating / temperature adjustment processing unit group 14a is configured by stacking the first heating / temperature adjustment processing units 10a in, for example, eight levels,
In the heating / temperature control unit 10a, the temperature control unit (CPL) 18a is an anti-reflection film coating unit (BC).
T) A first heating / temperature control processing unit group 14a and an anti-reflection film coating unit (BCT) group 13a are arranged so as to be located on the group 13a side. FIG. 3 is a cross-sectional view taken along the x direction of FIG.
Processing unit group 13a and second processing unit group 14a
FIG. 3 is a diagram showing a positional relationship with the data. Similarly, the second heating / temperature adjustment processing unit group 14b is configured by stacking the second heating / temperature adjustment processing units 10b in multiple stages, and the temperature adjustment processing is performed in all the second heating / temperature adjustment processing units 10b. The unit 18b is arranged on the resist film application unit (CT) group 13b side.

Around the vertical transfer type transfer device 19a,
Antireflection film coating unit (BCT) group 13a, resist film coating unit (CT) group 13b, first and second heating
Temperature control processing unit groups 14a and 14b are arranged.
The transfer of the wafer W between the first heating / temperature control processing unit group 14a and the anti-reflection film coating unit (BCT) group 13a, the second heating / temperature control processing unit group 14b and the resist film coating unit (CT) The transfer of the wafer W to / from the group 13b is performed by the transfer device 19a. Further, shutter members 47a and 47b that can be opened and closed are provided on both side surfaces of the temperature control unit (CPL) 18a of the first heating / temperature control unit 10a. The transfer of the substrate between the first heating and temperature control processing unit 10a and the wafer transfer body 11 and the transfer of the substrate between the first heating and temperature control processing unit 10a and the transfer device 19a are performed by the shutter 47a, respectively. 47b. The temperature control unit (CP) of the second heating / temperature control unit 10b
L) A shutter member 47a that can be opened and closed is provided on the side surface of the transfer device side of 18b.
7a and the temperature controller (CP)
L) The transfer of the substrate to and from 18b is performed.

On the other hand, in the second processing station 4, as shown in FIGS. 1 and 2, similar to the first processing station 3, the first processing station performs liquid processing on the wafer W near the normal temperature on the front side. A first development processing unit group 13c and a second development processing unit group 13d are disposed as the processing unit groups. The first development processing unit group 13c is configured by stacking development processing units (DEVs) 26 in two stages in the z-axis direction. Similarly, the second development processing unit group 13d is configured such that the development processing units (DEV) 26 Are stacked in two stages.

At the center of the second processing station 4,
A third heating / temperature adjustment processing unit group 14c and a fourth heating / temperature adjustment processing unit group 14d are arranged as a second processing unit group with the transport device 19b interposed therebetween. In the third heating / temperature adjustment processing unit group 14c, the third heating / temperature adjustment processing units 10c are stacked in seven stages in the z-axis direction, and a transport unit (STL) described below is further arranged below them. . In the fourth heating / temperature adjustment processing unit group 14d, the fourth heating / temperature adjustment processing unit 10d is configured to be stacked in eight stages in the z-axis direction.

Each of the third and fourth heating / temperature control units 1
Reference numerals 0c and 10d denote temperature control units (CPL) 18c and 18d for performing a temperature control process on the wafer W and heat processing units (HP) 20c and 20d for performing a heat process adjacent to each other and integrated. Have been. Then, as shown in FIG. 1, the temperature control processing units (CPL) 1 of all the stacked third heating / temperature control processing units 10c.
8c and the third heat / temperature control unit group 14c and the first heat processing unit (CPL) 18c so that the temperature control unit (CPL) 18c of the heat processing unit (HP) 20c is located on the first development processing unit (DEV) group 13c side. Development unit (DE
V) Group 13c is arranged. Further, the temperature control processing unit (CPL) 18d of the temperature control processing unit (CPL) 18d and the heat processing unit (HP) 20d of all the stacked fourth heating / temperature control processing units 10d includes the second development processing unit. (DEV) Fourth so as to be located on the group 13d side
A heating / temperature control processing unit group 14d and a second development processing unit (DEV) group 14d are arranged.

Around the vertical transfer type transfer device 19b,
First developing processing unit group 13c, second developing processing unit group 13d, third and fourth heating / temperature control processing unit group 14
c and 14d are arranged. Then, the third heating / temperature control processing unit group 14c and the first developing processing unit (DE
V) Transfer of wafer W to / from group 13c, fourth heating / temperature control processing unit group 14d, and second developing processing unit (DE
V) The transfer of the wafer W to and from the group 13b is performed by the transfer device 1
9b. Further, shutter members 47a and 47b that can be opened and closed are provided on both side surfaces of the temperature control processing unit (CPL) 18d of the fourth heating / temperature control processing unit 10d. The transfer of the substrate between the fourth heating and temperature control unit 10d and the transfer device 19b and the transfer of the substrate between the fourth heating and temperature control unit 10d and the wafer transfer body 37 are performed by the shutters 47a and 47b, respectively. 47b. In addition, the third heating / temperature control processing unit 10c
A shutter member 47b that can be opened and closed is provided on the side of the temperature control processing unit 18b on the side of the transfer device, and the transfer of the substrate between the transfer device 19b and the temperature control unit 18c is performed via the shutter member 47b. Is performed.

As shown in FIG. 1, on the back side of the first processing station 3 and the second processing station 4, a chemical tower used for the inspection machine 6 and the first processing unit group 13a for storing the processing liquid. 15 is provided. The container shelf can be moved by the rail 7 along the y direction in the drawing. The container shelf has, for example, a structure like a door that can be opened and closed on the back side, and the door can accommodate the container. This makes it easy to replace the container and perform maintenance and inspection. Inspection machine 6
Is for inspecting the thickness of the coating film on the wafer W that has been exposed and developed, and is installed as necessary. Further, as the treatment liquid, for example, an antireflection film coating unit (BC
T) 16, an anti-reflection film resist material supplied to the resist film coating unit (CT) 17, and a developer supplied to the development processing unit 26.
Here, the processing liquid stored in the chemical tower 15 disposed on the rear side may be used as a main processing liquid source, or the chemical tower 15 disposed on the rear side may be disposed as a spare for other areas. Another chemical tower may be arranged and used as a main processing liquid source.

In the interface section 5, a buffer cassette 33 having a structure similar to that of the wafer W cassette C for temporarily holding the wafer W before exposure is disposed on the front side thereof, and a peripheral exposure device 34 is disposed on the rear side thereof. Have been. Then, a wafer transfer body 37 which can be moved up and down in the vertical direction and further rotatable in the θ direction is connected to a transfer path 36 between the buffer cassette 33 and the peripheral exposure device 34.
The wafer transfer body 37 is moved along the temperature control processing unit (CP) of the fourth heating / temperature control processing unit 10d.
L) 18d, buffer cassette 33 and peripheral exposure device 3
4. It is configured to allow access to a pre-exposure temperature control unit (not shown).

Further, in the coating and developing system 1,
As shown in FIGS. 1 and 3, a first processing unit group 13 (an anti-reflection film coating unit (BCT) group 13 a, a resist film coating unit (C
T) between the group 13b) and the second processing unit group 14 (first and second heating / temperature control processing unit groups 14a, 14b), the first processing unit group 13 (second 1st and 2nd development processing unit group 13c,
13d) and the second processing unit group 14 (third and fourth heating / temperature control processing unit groups 14c and 14d), respectively, between the heat insulating wall 39 and the first processing unit group 1 described later.
A passage 40 for circulating the gas exhausted from the lower part of the upper part 3 to the upper part is arranged. That is, the heat insulating wall 39 and the passage 40 are arranged so as to separate the first processing unit group 13 and the second processing unit group 14 from each other.

As shown in FIG. 2, in the above-described anti-reflection film coating unit (BCT) group 13a, a wafer W is placed on a spin chuck in a cup to apply an anti-reflection film, and the wafer W is reflected. An anti-reflection coating unit (BCT) 16 for performing an anti-reflection coating process is stacked in three stages.

In the resist coating unit group 13b, a resist coating unit (CT) for applying a resist solution by placing the wafer W on a spin chuck in a cup and performing a resist coating process on the wafer W is stacked in three stages. Have been.

In the first developing processing unit group 13c, a developing processing unit (DEV) 26 for supplying a developing solution by placing the wafer W on a spin chuck in a cup and performing a developing process on the wafer W from above. Stacked in two tiers.

Similarly, in the second development processing unit group 13d, a development processing unit (DEV) 26 for supplying a developing solution by placing the wafer W on a spin chuck in a cup and performing development processing on the wafer W Are stacked in two stages from the top.

Second and third heating / temperature control processing unit group 1
In 4b and 14c, the heating / temperature control processing units 10 are stacked in seven stages, and transport units (STL) 38b and 38c are further arranged at the lower stage of these units as shown in FIG. The transfer of the wafer W between the first and second processing stations 3 and 4 is performed via a communication path 40 that connects the two transfer units (STLs) 38b and 38c. As shown in FIG. 4, the transport unit (ST
L) 38b and 38c are provided with openings, respectively, and shutter members 48a and 4b which can be opened and closed corresponding to the openings.
8b, 49a and 49b are provided. By opening and closing the shutter members 48a and 49b, the transfer of the wafer W is performed between the transfer units (STL) 38b and 38c and the corresponding transfer devices 19a and 19b. Further, by opening and closing the shutter members 48b and 49a, the transport unit (S
The transfer of the wafer W between the TLs 38b and 38c, that is, the transfer of the wafer W between the first and second stations is performed.

Next, the above-described transfer devices 19a and 19b will be described with reference to FIG. 5 which is a perspective view. The above-described transport devices 19a and 19b have the same structure, and are described with reference numeral 19 in FIG.

As shown in FIG. 5, the transport device 19
Opposite integral wall 5 interconnected at the top and bottom
A wafer W transfer means 54 that can move up and down in the vertical direction (Z direction) is provided inside a cylindrical support 53 composed of 1 and 52. The cylindrical support 53 is connected to a rotation shaft of a motor 55, and rotates integrally with the wafer W transfer means 54 about the rotation shaft by the rotation driving force of the motor 55. Therefore, the wafer W transfer means 54 is rotatable in the θ direction.

On the transfer base 56 of the wafer W transfer means 54, a plurality of, for example, two tweezers 57, 58 for holding the wafer W are provided vertically. Each tweezers 5
7 and 58 have basically the same configuration, and have a shape and size that allow them to pass through the side opening between the two walls 51 and 52 of the tubular support 53. In addition, each tweezers 5
Reference numerals 7 and 58 can be freely moved in the front-rear direction by a motor (not shown) built in the transfer base 56.

Next, the structure of the first heating / temperature control unit 10a will be described with reference to FIGS. FIG. 6 is a plan view of a heating / temperature control unit, and FIG.
FIG. 3 is a sectional view of a heating / temperature control unit.

As shown in FIGS. 6 and 7, the first heating / temperature control unit 10a performs a temperature control process on the wafer W and a heat processing unit (HP) 20a for performing a heat process on the wafer W. The temperature control processing unit (CPL) 18a is adjacent to each other and integrated.

The heat treatment unit (HP) 20a has a hot plate 24 whose set temperature can be set at around 200 ° C. Further, the heat treatment unit (HP) 20a is composed of the heat treatment unit (HP) 20a and the temperature control unit (CP).
L) Gate shutter 2 for opening and closing between 18a
1 and a ring shutter 22 that moves up and down together with the gate shutter 21 while surrounding the wafer W around the heating plate 24. The heating plate 24 is provided with three lift pins 23 for placing and raising and lowering the wafer W thereon. Note that a shielding plate screen may be provided between the hot plate 23 and the ring shutter 22. Heat treatment chamber 20a
A lifting mechanism 27 for raising and lowering the three lift pins 23 and a lifting mechanism 28 for raising and lowering the ring shutter 22 together with the gate shutter 21 are provided below the lower part. On the hot plate 23, a proximity pin 35 having a height of 0.2 mm and a guide 32 are provided.

The temperature control unit (CPL) 18a has a temperature control plate 25 for controlling the temperature of the wafer W to a normal temperature of about 23 ° C. As shown in FIGS. 4 and 6, an opening for transferring the wafer W to and from the cassette station 2 is provided on the side of the temperature control processing unit (CPL) 18a on the cassette station side. A shutter member 47a that can be opened and closed is disposed corresponding to each part. Further, the transport device 19 of the temperature control processing unit (CPL) 18a
An opening for transferring the wafer W to and from the transfer device 19 is provided on the side of the side, and a shutter member 47b that can be opened and closed is disposed corresponding to the opening.

As shown in FIG. 7, the heat treatment unit (H
P) 20a and the temperature control processing unit (CPL) 18a
The temperature control plate 25, which is communicated through the communication port 30 and mounts the wafer W thereon and controls the temperature, is configured to be movable in the horizontal direction by the moving mechanism 60 along the guide plate 59. Thus, the temperature control plate 25 can enter the heat treatment unit (HP) 20a through the communication port 30, and the wafer W after being heated by the hot plate 24 in the heat treatment unit (HP) 20a. Is received from the lift pins 23 and is carried into the temperature control unit (CPL) 18a,
The temperature of the wafer W is adjusted.

In the above description, the first heating / temperature control processing unit 1
Although 0a has been described, the fourth heating / temperature adjustment processing unit 10d of the fourth heating / temperature adjustment processing unit group 14d has a similar structure. Also, the second heating / temperature adjustment processing unit 10b and the third heating / temperature adjustment processing unit 10c have substantially the same structure as the first heating / temperature adjustment processing unit 10a. As shown in FIG. 5, the first heating and temperature control processing unit 10a has shutter members 47a and 47b on both side surfaces, whereas the second and third heating and temperature control processing units 10b and 10c have transfer devices 19a and 47b. The difference is that the shutter member 47a or 47b is provided only on the side surface on the side. In the present embodiment, in the temperature control processing units (CPL) 18a, 18d, the opening and closing drive is performed so that both the sitter members 47a, 47b are not opened. That is, when the shutter member 47a is opened by the shutter member 47a,
b to close the opening, and conversely, the shutter member 47b
When the shutter is opened, the opening is closed by the shutter member 47a. By controlling the opening and closing drive of the shutter members 47a and 47b in this manner,
The temperature control processing unit (CPL) fulfills the function of a load lock chamber, so to speak, and a processing liquid supply unit (BCT, CCT) for processing the wafer W at around normal temperature.
T, DEV) can be more precisely controlled.

As described above, in the present embodiment, a heat insulating wall 39 and a second heat treatment wall are provided between the first processing unit group 13a, 13b, 13c, 13d and the second processing unit group 14a, 14b, 14c, 14d. 1 processing unit group 13
There is provided a temperature control mechanism in which a passage 40 for circulating gas exhausted from the lower part of the upper part to the upper part is provided. This temperature control mechanism will be described below with reference to FIG.
FIG. 8 is a schematic cross-sectional view of a first processing unit group 13a in which a processing liquid supply unit, here, an antireflection film coating unit (BCT) 16 is stacked in a plurality of stages.

As shown in FIG. 8, a first processing station 3 has a first processing station 3
Coating unit (B)
A clean air supply unit 41 that supplies clean air whose temperature has been adjusted from above to the CT) group 13a is disposed. The clean air supply unit 41 includes an FFU (fan filter unit) and a temperature controller for adjusting the temperature and humidity, and the gas exhausted from the lower part of the anti-reflection film coating unit (BCT) group 13a is provided on the upper part. Clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas flowing in through the passage 40 for circulation is supplied to each antireflection film coating unit (BCT) 16 through the passage 43. Further, as shown in FIG. 1, a stepped heat wall 39 is arranged between the passage 40 and the heating / temperature control processing unit 10a as the second processing unit group. In the present embodiment, by providing the heat insulating wall and the temperature control mechanism as described above, the temperature control in the processing liquid supply unit (BCT, CT, DEV) for performing the processing on the wafer W at around normal temperature is more precise. Can be done. Then, similarly, as shown in FIG. 1, the first heating unit groups 13b, 13c, and 13d correspond to the heating / temperature control processing unit groups 14b, 1b, respectively.
A clean air supply unit 40 and a heat insulating wall 39 are also separately provided between 4c and 14d.

Next, the processing steps in the coating and developing system 1 configured as described above will be described.

In the coating and developing system 1, the unprocessed wafer W stored in the cassette C is taken out by the wafer carrier 11 of the cassette station 2,
Temperature control processing unit (CPL) 18a in first heating / temperature control heat treatment unit 10a of first processing station 3
And is placed on the temperature control plate 25 to perform a temperature control process.

The wafer W subjected to the temperature control processing in the temperature control processing unit (CPL) 18a is transferred into the antireflection film coating unit (BCT) 16 in the antireflection film coating unit (BCT) group 13a by the transfer device 19a. It is conveyed and the treatment liquid for the antireflection film is applied.

The wafer W coated with the anti-reflection film processing solution by the anti-reflection film coating unit (BCT) 16 is transferred by the transfer unit 19a to the temperature control unit (CPL) 18a of the first heating / temperature control unit 10a. And placed on the temperature control plate 25. As shown in FIG. 7, the wafer W placed on the temperature control plate 25 passes through the communication port 30 into the heat processing unit (HP) 20 a by the temperature control plate 25 horizontally moved by the moving mechanism 60. Conveyed. The transported wafer W is supported by the lift pins 23 in the raised state. Thereafter, the lift pins 23 are lowered, and the wafer W is placed on the hot plate 24.
The heat treatment is performed in the heat treatment space formed by raising the gate shutter 21 and the gate shutter 21. After the heat treatment, the lift pin 23 is raised and the ring shutter 22
Then, the gate shutter 21 is lowered, and the wafer W is separated from the hot plate 24 and supported by the lift pins 23.

Thereafter, the temperature control plate 25 is inserted again into the heat processing unit (HP), and receives the wafer W subjected to the heat processing. The wafer W is transported by the temperature control plate 25 into the temperature control processing unit (CPL) 18a, where the temperature control process is performed.

The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 18a is transferred by the transfer device 19a into the resist coating unit (CT) 17 in the resist coating unit group 13b, where the resist liquid is applied. You.

The wafer W to which the resist solution has been applied by the resist coating unit (CT) 17 is transferred by the transfer device 19a into the temperature control processing unit (CPL) 18b of the second heating / temperature control processing unit 10b, and the temperature is controlled. It is mounted on the plate 25. The wafer W placed on the temperature control plate 25 is transferred into the heat processing unit (HP) 20b through the communication port 30 by the temperature control plate 25 horizontally moved by the moving mechanism 60. The transported wafer W is supported by the lift pins 23 in the raised state. After this, lift pins 23
Is lowered, the wafer W is placed on the hot plate 24, and at the same time, the ring shutter 22 and the gate shutter 21 are raised to perform a heating process in a heating process space formed. After the heat treatment, the lift pins 23 are raised, the ring shutter 22 and the gate shutter 21 are lowered, and the wafer W is separated from the hot plate 24 to lift the lift pins 2.
3 supported.

Thereafter, the temperature control plate 25 is inserted again into the heat processing unit (HP) 20b to receive the wafer W subjected to the heat processing. The wafer W is transferred by the temperature control plate 25 into the temperature control processing unit (CPL) 18b, where the temperature control processing is performed.

The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 18b is transferred by the transfer device 19a.
The transport unit (STL) 38b is transported to the transport unit (STL) 38b disposed at the lowermost stage of the second heating / temperature control processing unit group 14b, passes through the communication path 40, and is transported by the third heating / temperature control unit group 14c. 38c.

The wafer W transferred to the transfer unit (STL) in the third heating / temperature control processing unit group 14c is
The carrier 19b is transported to the temperature control processing unit of the heating / temperature control processing unit 10d of the fourth heating / temperature control processing unit group 14d.

Further, the wafer W transferred to the temperature adjustment processing unit is
7, the wafer is conveyed into the peripheral exposure device 34 to perform peripheral exposure.

The wafer W subjected to the peripheral exposure by the peripheral exposure device 34 is transferred to the buffer cassette 33 by the wafer transfer body 37 and temporarily held therein, or the wafer transfer body 37 and the pre-exposure temperature control unit (not shown). ) And transferred to an exposure apparatus (not shown) via a wafer transfer body.

Here, the buffer cassette 33 is
One can be used as a cassette for holding the wafer W after peripheral exposure, and the other can be used as a cassette for holding the wafer W before peripheral exposure. On this occasion,
It is desirable to provide a mechanism for controlling the temperature of the wafer W to a normal temperature of about 23 ° C. in the cassette holding the wafer W before the peripheral exposure. Alternatively, the buffer cassette 33 holds only the wafer W after the peripheral exposure, and the wafer W before the peripheral exposure
Of the vacant temperature control processing unit 18c or 18d of the heating / temperature control processing unit 10c or 10d of the processing unit group 14c or 14d of the wafer W before the peripheral exposure.
Can also be used as a place to wait. In this case, there is no need to provide a buffer cassette for holding the wafer W before the peripheral exposure.

Next, the wafer W that has been subjected to the exposure processing by the exposure apparatus is transferred from the interface unit 5 to the fourth heating / heating temperature of the second processing station 4 via the wafer carrier, the buffer cassette 33 and the wafer carrier 37. Fourth heating / temperature control unit 10d in the temperature control unit group 14d
Is transferred into the temperature control processing unit (CPL) 18d, and the temperature control processing is performed.

The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 18d is transferred by the transfer unit 19b to the developing processing unit (DEV) 26 in the first developing processing unit group 13c or the second developing processing unit group 13d. And the developing process is performed.

The wafer W that has been subjected to the development processing in the development processing unit (DEV) 26 is heated, for example, in the third heating / temperature control processing unit group 14c by the transfer device 19b.
Temperature control unit (CPL) of temperature control unit 10c
18c, the temperature control processing unit (CPL) 18
The heat treatment unit (HP) 20c adjacent to the heat treatment unit (c) is conveyed into the heat treatment unit (HP) 20c, where the heat treatment is performed.

The wafer W subjected to the heat treatment in the heat treatment unit (HP) 20c is transferred to the temperature control processing unit 18c, and transferred to the transfer unit (STL) 38c in the second processing station 4 by the transfer device 19b.
The wafer is transported to the transport unit (STL) 38b in the first processing station 3 through the communication path 40.

The wafer W transferred to the transfer unit (STL) is transferred by the transfer device 19a to the temperature control processing unit 18a of the first heating / temperature control processing unit 10a in the first heating / temperature control processing station group 14a. . Then, the wafer W in the temperature control processing unit 18a is loaded into the cassette C by the wafer transfer body 11 of the cassette station 2.
Housed within. Here, when the inspection machine 6 is installed, the wafer W in the temperature control processing unit 18a is transferred to the inspection machine 6 by the wafer transfer body 11 of the cassette station 2. The inspection device 6 determines whether the width of the pattern obtained by the exposure and development processing is appropriate by measuring the thickness of the resist film. The inspected wafer W is
The cassette C is accommodated in the cassette C by the wafer carrier 11 of the cassette station 2.

According to the coating and developing processing system according to the present embodiment configured as described above, the temperature control processing unit (CPL) of the heating / temperature control processing unit is disposed on the liquid processing unit side. The temperature processing unit (CPL) is interposed between the liquid processing unit and the heat processing unit (HP). Thereby, the thermal influence from the heat processing unit on the liquid processing unit side can be suppressed as much as possible. Therefore, in the coating and developing processing system, the liquid processing unit (B
Temperature control in CT, CT, DEV) can be performed precisely.

Further, according to the coating and developing processing system according to the present embodiment, the first and second processing stations 3, 4
Liquid processing unit group (anti-reflection film coating unit (BCT) group 13a, resist film coating unit (CT))
Group 13b, first developing processing unit group 13c, second developing processing unit group 13d) and heating / temperature controlling unit groups (first to fourth heating / temperature controlling unit groups 14a, 14b,
14c, 14d), a passage 40 for circulating gas exhausted from the lower part of each of the heat insulating wall 39 and the liquid processing unit groups 13a, 13b, 13c, 13d to the upper part thereof is arranged. As a result, the passage 40 also has a function of a heat insulating means, so that a double heat insulating means is disposed between the first processing unit group 13 and the second processing unit group 14, and furthermore, the liquid processing unit group In this case, the thermal effect of the heat processing unit of the heating / temperature control processing unit can be suppressed, and the temperature control in the liquid processing unit group that performs liquid processing on the wafer W at around normal temperature can be performed extremely accurately.

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to FIGS.
9 to 11 are views showing a coating and developing processing system according to one embodiment of the present invention, FIG. 9 is a plan view, and FIG. 10 is a front view. FIG. 11 is a cross-sectional view taken along the line AA ′ of FIG. 9, and illustrates a positional relationship in the x direction of the first processing unit group 13a, the second processing unit group 14a, and the chemical tower 15a. FIG.

This embodiment is different from the above-described first embodiment in that
The arrangement of the chemical tower that stores the processing liquid is different.
It is structurally different in that the number of the heating / temperature control processing devices disposed between the two transfer devices 19a and 19b is one. Hereinafter, the second embodiment will be described, but a description of the same structure as the first embodiment will be partially omitted. The same components as those in the first embodiment will be described with the same reference numerals.

As shown in FIG. 9, the coating and developing system 1 includes a cassette station 2 similar to that of the first embodiment.
A first processing station 8 in which various single-wafer processing units for performing predetermined processing on a wafer W in a coating and developing processing step are arranged in multiple stages, and a first processing station 8 adjacent to the first processing station. Second processing station 9 arranged
And an interface unit 5 for transferring a wafer W between exposure apparatuses (not shown) arranged adjacent to the second processing station 9. In the first processing station 8, an anti-reflection film and a resist film are mainly applied on the wafer W, and in the second processing station 9, the exposed resist film is developed.

The description of the cassette station 2 will be omitted because it has the same structure as in the first embodiment.

As shown in FIGS. 9 and 10, in the first processing station 8, an anti-reflection film coating unit (BC) is provided as a first processing unit group for performing liquid processing on the front side.
T) Group 13a and resist film coating unit (CT) group 1
3b is provided. Anti-reflection coating unit (BC
The T) group 13a is configured by stacking three layers of antireflection film coating units (BCT) 16 that perform coating processing on the wafer W at around normal temperature in the z-axis direction. Further, the resist film applying unit (CT) group 13b performs a resist film applying unit (C
T) 17 are stacked in three stages in the z-axis direction. Further, an anti-reflection film coating unit (BCT) group 13a
Chemical towers 15a and 15b are arranged adjacent to the resist film coating unit (CT) group 13b, respectively. The chemical tower 15a contains an anti-reflection film material to be supplied as a processing liquid to an anti-reflection film coating unit (BCT) 16, and the chemical tower 15b is supplied to a resist film coating unit (CT) 17 as a processing liquid. Resist material.

On the back of the first processing station 8,
A first heating / temperature control processing unit group 14a and a second heating / temperature control unit group 14b are disposed as a second processing unit group with the transfer device 19a interposed therebetween. The first heating / temperature adjustment processing unit group 14a and the second heating / temperature adjustment processing unit group 14b are disposed adjacent to the chemical towers 15a and 15b, respectively. The first heating / temperature control processing unit group 14a includes first heating / temperature control processing units 10a stacked in eight stages in the z-axis direction. The second heating / temperature control processing unit group 14b is configured by stacking the second heating / temperature control processing units 10b in eight stages in the z-axis direction. Each first and second heating / temperature control unit 10
Reference numerals a and 10b denote temperature control units (CPL) 18a and 18b for performing a temperature control process on the wafer W and heat processing units (HP) 20a and 20b for performing a heat process adjacent to each other and integrated. Have been.

As shown in FIG. 11, the first heating / temperature adjustment processing unit group 14a includes the first heating / temperature adjustment processing unit 10a.
a is configured by being stacked in multiple stages. Note that FIG.
FIG. 7 is a cross-sectional view taken along line AA ′ of FIG.
It is a figure which shows the positional relationship of the 1st processing unit group 13a, the chemical tower 15a, and the 2nd processing unit group 14a along the direction. As shown in FIGS. 9 and 11, a first heating / temperature control processing unit group 1 as a second processing unit group
Reference numeral 4a denotes a configuration in which the first heating / temperature control units 10a are stacked in eight stages, and in all the first heating / temperature control units 10a, the heat processing unit (HP) 20a and the temperature control unit (CP) The temperature control processing unit (CPL) 18a is disposed on the side of the chemical tower 15a as a processing liquid supply unit. Then, an antireflection film coating unit group 13a as a first processing unit group is arranged adjacent to the chemical tower 15a. Similarly, the second heating / temperature adjustment processing unit group 14b is configured by stacking the second heating / temperature adjustment processing units 10b in eight stages, and the heating processing in all the first heating / temperature adjustment processing units 10b is performed. The temperature control unit (CPL) 1 of the unit (HP) 20b and the temperature control unit (CP) 18b
8b is disposed on the chemical tower 15b side as a processing liquid supply unit. A resist film coating unit group 13b as a first processing unit group and a first development processing unit group 13c to be described later are arranged adjacent to the chemical tower 15b.

Around the vertical transfer type transfer device 19a,
Antireflection film coating unit (BCT) group 13a, resist film coating unit (CT) group 13b, first and second heating
Temperature control processing unit groups 14a and 14b are arranged.
The structures of the transport device 19a, the antireflection film coating unit (BCT) group 13a, the resist film coating unit (CT) group 13b, and the first heating / temperature control processing unit group 14a in the first processing station 8 are the same as those of the first processing station described above. It has the same structure as the first processing station 3 in the embodiment and each component, and a detailed description is omitted here. The second heating / temperature control processing unit group 14b in the present embodiment is the second heating / temperature control processing unit group 14b in the first embodiment.
The structure is different in that the shutter members 47a and 47b are provided on both side surfaces and the transport unit (STL) is not provided. In the present embodiment, the first processing station 8
The transfer of the wafer W between the second heating / temperature adjusting unit 10b of the second heating / temperature adjusting unit 10b of the second heating / temperature adjusting unit group 14b.
8b. Therefore, the shutter members 47a, 4b are provided on both side surfaces of each temperature control processing unit 18b.
7b is provided.

On the other hand, in the second processing station 9, as shown in FIGS. 9 and 10, similar to the first processing station 8, the first processing station performs liquid processing on the wafer W near normal temperature on the front side. The first development processing unit group 13c and the second development processing unit group 13d are disposed as the processing unit groups. The first development processing unit group 13c is configured by stacking development processing units (DEVs) 26 in two stages in the z-axis direction. Similarly, the second development processing unit group 13d is configured such that the development processing units (DEV) 26 Are stacked in two stages. Further, a chemical tower 15c is arranged adjacent to the second development processing unit group 13d. The chemical tower 15c contains a developing solution supplied as a processing solution to the developing unit (DEV) 26.

On the back of the second processing station 9,
A third heating / temperature control processing unit group 14c is disposed as a second processing unit group at a position facing the second heating / temperature control processing unit group 10b with the transport device 19b interposed therebetween. The third heating / temperature control unit group 14c is arranged adjacent to the chemical tower 15c. Third
The heating / temperature adjustment processing unit group 14c is configured by stacking eight third heating / temperature adjustment processing units 10c in the z-axis direction.

The third heating / temperature control unit 10c is a temperature control unit (CP) for performing temperature control on the wafer W.
L) 18c and 18d and heat treatment units (HP) 20c and 20d for performing heat treatment are adjacent to each other and integrated. Then, as shown in FIG. 9, all the third heating / temperature control units 10
c of the temperature control processing unit (CPL) 18c and the heat processing unit (HP) 20c
18c is a chemical tower 15c as a processing liquid supply unit
Placed on the side. A second developing processing unit (DEV) group 13d as a first processing unit group is disposed adjacent to the chemical tower 15c.

Around the vertical transfer type transfer device 19b,
First developing processing unit group 13c, second developing processing unit group 13d, second and third heating / temperature control processing unit group 14
b and 14c are arranged. Here, the second heating / temperature adjustment processing unit group 14b can cope with any of the heating or temperature adjustment before and after the formation of the coating film on the wafer, and the heating or temperature adjustment before and after the development. . Then, the transfer of the wafer W between the second heating / temperature adjustment processing unit group 14b and the third heating / temperature adjustment processing unit group 14c, and the second heating / temperature adjustment processing unit group 14b and the first or second development. Transfer of the wafer W between the processing unit (DEV) groups 13c and 13d, the third heating / temperature control processing unit group 14c, and the first or second developing processing unit (DEV) group 13c,
The transfer of the wafer W to and from 3d is performed by the transfer device 19b. The transfer of the wafer W between the second or third heating / temperature control unit group 14b, 14c and the transfer device 19b is performed by the respective temperature control units 18b, 18
This is performed via 47b and 47a provided in c. The transfer of the wafer W between the temperature control processing unit 18b of the third heating / temperature control processing unit 10c and the wafer carrier 37 is performed by the shutter member 4 of the temperature control processing unit 18c.
7b.

The interface unit 5 has the same structure as the interface unit 5 in the first embodiment described above, and therefore the description thereof will not be repeated.

Further, in the coating and developing system 1,
As shown in FIGS. 9 and 11, the first processing station 8
And the first processing unit group 13 (the anti-reflection film coating unit (BCT) group 13) in the second processing station.
a, a resist film coating unit (CT) group 13b, a first development processing unit (DEV) group 13c, a second development processing unit (DEV) group 13d) and a second processing unit group 14
(The first heating / temperature control processing unit group 14a, the second heating / temperature control processing unit group 14b, and the third heating / temperature control processing unit group 14c) are located between the chemical tower 15 (15a,
15b, 15c) are arranged, and between the chemical tower 15 and the second processing unit group 14, gas exhausted from the heat insulating wall 39 and the lower part of the first processing unit group 13 is supplied to the upper part. A passage 40 for circulation is provided. The passage 40 and the heat insulating wall 39 provided adjacent to the chemical tower 15b function as a temperature control mechanism and a heat insulating means for the two first processing unit groups 14a corresponding to the one second processing unit group 14b. I do. In this embodiment, as in the first embodiment described above, a clean air supply unit that supplies clean air temperature-controlled to the first processing unit group from the top is provided above the coating and developing system. Are located. The clean air supply unit includes an FFU (fan filter unit) and a temperature control device for adjusting temperature and humidity, and a passage for circulating gas exhausted from the lower part of the first processing unit group to the upper part. Clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas flowing through
3 to the first processing unit group. Also in the present embodiment, similarly to the above-described first embodiment, the heat insulating wall 3 is provided.
By providing a temperature control mechanism provided with a passage 40 for circulating gas exhausted from the lower part of the first processing unit group 9 and the lower part of the first processing unit group 13, the processing is performed on the wafer W near normal temperature. Processing liquid supply unit (BCT,
CT, DEV) can be precisely controlled. Further, since the passage 40 also has a function of a heat insulating means, the heat insulating wall 39 and the passage 40 are provided between the second processing unit group 14 and the chemical tower 15 so that the double heat insulating means is disposed. Become. Therefore, the temperature control in the liquid processing unit group that performs liquid processing on the wafer W at around normal temperature can be performed very precisely, and the processing liquid stored in the chemical tower 15 is not affected by the thermal influence of the heat processing unit 20. And the temperature of the processing liquid is easily adjusted.

As shown in FIG. 10, in the above-described anti-reflection film coating unit (BCT) group 13a, the wafer W is placed on a spin chuck in a cup to apply an anti-reflection film.
An anti-reflection film coating unit (BCT) 16 for applying an anti-reflection film coating process to the wafer W is stacked in three stages. In the resist coating unit group 13b, three stages of resist coating units (CT) for placing a wafer W on a spin chuck in a cup to apply a resist solution and performing a resist coating process on the wafer W are stacked. .
In the first development processing unit group 13c, a development processing unit (DE) that supplies a developing solution by placing the wafer W on a spin chuck in a cup and performs development processing on the wafer W
V) 26 are stacked in two stages from the top. Similarly,
In the second development processing unit group 13d, a development processing unit (DE) that places the wafer W on a spin chuck in the cup and supplies a development solution to perform development processing on the wafer W
V) 26 are stacked in two stages from the top.

The first, second, and third heating / temperature control unit groups 14a, 14b, and 14c respectively include a heat processing unit (HP) 20 for performing a heat process on the wafer W and a temperature control for the wafer W. Temperature control processing unit (C
PL) 18 are arranged adjacent to each other and integrated, and the heating / temperature control processing units 10 are stacked in eight stages. As described above, the shutter members 47a and 47b are provided on the side surfaces of all the temperature control processing units. Is provided. Note that the structure of the heating / temperature control unit 10 in the present embodiment is the same as that of the above-described first embodiment, and a description thereof will be omitted.

The structure of the transfer devices 19a and 19b described above is the same as that of the transfer devices 19a and 19b of the first embodiment described above, and a description thereof will be omitted.

Next, the processing steps in the coating and developing system 1 configured as described above will be described. The operation of the heating / temperature control unit is the same as that of the above-described first embodiment, and will not be described.

In the coating and developing system 1, after the unprocessed wafer W stored in the cassette C is taken out by the wafer transfer body 11 of the cassette station 2,
Temperature control processing unit (CPL) 18a in first heating / temperature control heat treatment unit 10a of first processing station 3
And is placed on the temperature control plate 25 to perform a temperature control process.

The wafer W subjected to the temperature control processing in the temperature control processing unit (CPL) 18a is transferred into the antireflection film coating unit (BCT) 16 in the antireflection film coating unit (BCT) group 13a by the transfer device 19a. It is conveyed and the treatment liquid for the antireflection film is applied.

The wafer W coated with the anti-reflection film processing liquid by the anti-reflection film coating unit (BCT) 16 is transferred by the transfer unit 19a to the temperature control unit (CPL) 18a of the first heating / temperature control unit 10a. And placed on the temperature control plate 25. The wafer W placed on the temperature control plate 25 is transferred into the heat processing unit (HP) 20a and subjected to the heat processing.

Thereafter, the wafer W is transferred to the temperature control unit (C).
PL) 18a, and a temperature adjustment process is performed.

The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 18a is transferred by the transfer device 19a into the resist coating unit (CT) 17 in the resist coating unit group 13b, where the resist liquid is applied. You.

The wafer W to which the resist liquid has been applied by the resist coating unit (CT) 17 is transferred by the transfer device 19a into the temperature control unit (CPL) 18b of the second heating / temperature control unit 10b. Further, the wafer W
Is transported into the heat treatment unit (HP) 20b, where the heat treatment is performed.

Thereafter, the wafer W is transferred into the temperature control processing unit (CPL) 18b, where the temperature control processing is performed.
The wafer W that has been subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 18b is heated by the transfer device 19b to the heating / temperature adjustment processing unit 10c of the third heating / temperature adjustment processing unit group 14c.
To the temperature control processing unit 18c.

Further, the wafer W transferred to the temperature adjustment processing unit is
7, the wafer is conveyed into the peripheral exposure device 34 to perform peripheral exposure.

The wafer W on which the peripheral exposure has been performed by the peripheral exposure device 34 is transferred to the buffer cassette 33 by the wafer transfer body 37 and temporarily held therein, or the wafer transfer body 37 and the pre-exposure temperature control unit (not shown). ) And transferred to an exposure apparatus (not shown) via a wafer transfer body.

Next, the wafer W that has been subjected to the exposure processing by the exposure apparatus is transferred from the interface section 5 to the third heating / heating temperature of the second processing station 9 via the wafer carrier, the buffer cassette 33, and the wafer carrier 37. Heating / temperature control unit 10c in the temperature control unit group 14c
Is transferred into the temperature control processing unit (CPL) 18c, and the temperature control processing is performed.

The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 18c is transferred by the transfer unit 19b to the development processing unit (DEV) 26 in the first development processing unit group 13c or the second development processing unit group 13d. And the developing process is performed.

The wafer W that has been subjected to the development processing in the development processing unit (DEV) 26 is heated by the transfer device 19b, for example, in the second heating / temperature control processing unit group 14b.
Temperature control unit (CPL) of temperature control unit 10b
18b, the temperature control unit (CPL) 18
b is conveyed into a heat treatment unit (HP) 20b adjacent to the heat treatment unit b, and heat treatment is performed.

The wafer W subjected to the heat treatment in the heat treatment unit (HP) 20b is transferred to the temperature control unit 18b, and is transferred by the transfer device 19a to the first heat / temperature control station group 14a in the first heat / temperature control station group 14a. It is transported to the temperature control processing unit 18a of the processing unit 10a. Then, the wafer W in the temperature control processing unit 18a is loaded into the cassette C by the wafer transfer body 11 of the cassette station 2.
Housed within.

According to the coating and developing processing system according to the present embodiment configured as described above, the liquid processing unit (BC
T, CT, DEV), a chemical tower as a processing liquid supply unit is disposed adjacent to the chemical tower, and a heating / temperature control unit is disposed adjacent to the chemical tower, and a temperature control unit of the heating / temperature control unit ( By disposing the CPL) on the chemical tower side, the temperature control unit and the chemical tower are interposed between the heat processing unit and the liquid processing unit of the heating / temperature control unit. This makes it possible to significantly suppress the thermal influence of the heat processing unit on the liquid processing unit side. In the coating and developing processing system, the liquid processing units (BCT, CT, DEV) can be precisely controlled.

Further, according to the coating and developing system according to this embodiment, the liquid processing unit group (the anti-reflection film coating unit (BCT) group 13a, the resist film coating unit (C
T) group 13b, first development processing unit (DEV) group 13
c, between the second development processing unit (DEV) group 13d) and the heating / temperature adjustment processing unit group (first to fourth heating / temperature adjustment unit groups 14a, 14b, 14c, 14d);
Insulating wall 39 and liquid processing unit groups 13a, 13 respectively
The passage 40 for circulating the gas exhausted from the lower part of each of b, 13c, and 13d to the upper part thereof is disposed, so that the thermal effect of the heat processing unit of the heating / temperature control processing unit on the liquid processing unit group is further increased. And the temperature control in the liquid processing unit group that performs liquid processing on the wafer W at around normal temperature can be performed extremely accurately.

(Third Embodiment) Hereinafter, a third embodiment of the present invention will be described with reference to FIGS. 12 to 14 are views showing a coating and developing processing system according to an embodiment of the present invention. FIG. 12 is a plan view and FIG.
3 is a front view. FIG. 14 is a cross-sectional view taken along the line BB ′ of FIG. 12, and is a diagram illustrating a positional relationship between the first processing unit group 13a and the second processing unit group 14a in the x direction. is there.

This embodiment is different from the above-described first embodiment in that
The location of the chemical tower containing the processing liquid, the small number of transport devices and heating / temperature control devices, the point where the anti-reflection film coating unit (BCT) and the resist film coating unit (CT) are stacked Therefore, the entire system is smaller than the first and second embodiments.

Hereinafter, description will be made in the third embodiment.
The description of the same structure as in the first embodiment is partially omitted. The same components as those in the first embodiment will be described with the same reference numerals.

As shown in FIG. 12, the coating and developing treatment system 1 has the same cassette station 2 as in the first embodiment.
And a first processing station 45 in which various single-wafer processing units for performing a predetermined process on the wafer W in the coating and developing process are arranged in multiple stages, and a first processing station 45 adjacent to the first processing station. Second processing station 4 arranged
6 and an interface unit 5 for transferring a wafer W between exposure apparatuses (not shown) arranged adjacent to the second processing station 46. . In the first processing station 45, an anti-reflection film and a resist film are applied mainly on the wafer W, and in the second processing station 46, the exposed resist film is developed. A transfer device 19 is disposed at a substantially central portion of the coating and developing processing system 1, and the transfer device 19 is used for transferring a wafer W during processing in the first processing station 45 and the second processing station 46.

The cassette station 2 has substantially the same structure as that of the first embodiment, and therefore only different parts will be described. As shown in FIG. 13, the bottom of the cassette station 2 has a resist film coating unit (C
At T) 17, a chemical tower 15b that accommodates a resist film material supplied as a processing liquid is disposed.

As shown in FIGS. 12 and 13, in the first processing station 45, the first processing station
The antireflection film / resist film application unit (CT) group 13e is provided as a processing unit group. The anti-reflection / resist film coating unit (CT) group 13e includes an anti-reflection film coating unit (BCT) 16 and a resist film coating unit (C) for performing a coating process on the wafer W at around normal temperature.
T) 17 are stacked two by two in the z-axis direction. Further, a chemical tower 15a is disposed adjacent to the anti-reflection / resist film coating unit (CT) group 13e. The chemical tower 15a contains an anti-reflection coating material supplied as a processing liquid to an anti-reflection coating unit (BCT) 16.

At the back of the first processing station 45, a first heating / temperature control processing unit group 14a as a second processing unit group is disposed adjacent to the chemical tower 15a. The first heating / temperature control processing unit group 14a is configured by stacking the first heating / temperature control processing units 10a in multiple stages in the z-axis direction. Each first heating / temperature control unit 10a includes a temperature control unit (CPL) 18a for performing a temperature control process on a wafer W and a heat processing unit (HP) 20a for performing a heat process, which are adjacent to each other and integrated. It is composed.

As shown in FIG. 14, the first heating / temperature adjustment processing unit group 14a includes the first heating / temperature adjustment processing unit 10a.
a are laminated in 12 layers. FIG. 14 is a cross-sectional view taken along the line BB ′ of FIG. 12, and shows the first processing unit group 13a and the second processing unit group 13a along the x direction.
FIG. 3 is a diagram showing a positional relationship between a processing unit group 14a and a chemical tower 15a. As shown in FIG. 12 and FIG. 14, the first heating / temperature control processing unit group 14a is configured by stacking the first heating / temperature control processing units 10a in 12 layers, and is disposed adjacent to the chemical tower 15a. I have. Furthermore,
In all the first heating and temperature control processing units 10a of the first heating and temperature control processing unit group 14a, the temperature control processing unit (CPL) 18a of the heat processing unit (HP) 20a and the temperature control processing unit (CP) 18a Are arranged on the side of the chemical tower 15a. An antireflection film / resist film application unit (CT) group 13e is arranged adjacent to the chemical tower 15a.

On the other hand, in the second processing station 46,
As shown in FIGS. 12 and 13, a development processing unit group 13f is disposed on the front side as a first processing unit group for performing liquid processing on the wafer W at around normal temperature. The development processing unit group 13f includes development processing units (DEV) 26 stacked in four stages in the z-axis direction. Further, a chemical tower 15c is arranged adjacent to the developing processing unit group 13f. This chemical tower 15c
Contains a developer supplied to the development processing unit (DEV) 26 as a processing liquid.

On the back of the second processing station 9,
A second heating / temperature control processing unit group 14b is disposed adjacent to the chemical tower 15c. The second heating / temperature control processing unit group 14b includes a second heating / temperature control processing unit 10b.
Are stacked in 12 steps in the z-axis direction. Then, all of the second heating / temperature control processing unit group 14b
In the heating / temperature control unit 10b, a heat processing unit (HP) 20b and a temperature control unit (CP) 18b
Are arranged so that the temperature control processing unit (CPL) 18b is located on the chemical tower 15c side. A development processing unit (DEV) group 13f is arranged adjacent to the chemical tower 15c.

An anti-reflection film / resist film coating unit (CT) group 13e is provided around a vertical transfer type transfer device 19.
A developing processing unit group 13f and first and second heating / temperature adjusting processing unit groups 14a and 14b are arranged. The transfer of the wafer W between the unit groups is performed by the transfer device 19. Further, the transfer of the wafer W between the first heating / temperature control processing unit group 14a and the wafer transfer body 11 and the wafer W between the second heating / temperature control processing unit group 14b and the wafer transfer body 37 are performed.
The transfer of the wafer W between the first or second heating / temperature control processing unit group 14a, 14b and the transfer device 19 is performed by the first or second heating / temperature control processing unit group 14a,
This is performed via shutter members 47a and 47b provided on both side surfaces of the temperature and temperature control units 18a and 18b of the respective heating and temperature control units 10a and 10b of 14b.

The interface section 5 has the same structure as the interface section 5 in the first embodiment described above, and a description thereof will be omitted.

In this coating and developing system 1, FIG.
2. As shown in FIG. 13, the first processing unit group 13
(Anti-reflection film / resist film coating unit (CT) group 13
e, between the development processing unit group 13f) and the second processing unit group 14 (the first heating / temperature adjustment processing unit group 14a, the second heating / temperature adjustment processing unit group 14b). , 15c), and the chemical tower 15 and the second processing unit group 1
4, a heat insulating wall 39 and the first processing unit group 13
A passage 40 for circulating the gas exhausted from the lower part of the upper part to the upper part is arranged. Also in this embodiment,
As in the first embodiment described above, a clean air supply unit that supplies clean air temperature-controlled from above to each first processing unit group is disposed above the coating and developing processing system. The clean air supply unit includes an FFU (fan filter unit) and a temperature control device for adjusting temperature and humidity, and a passage for circulating gas exhausted from the lower part of the first processing unit group to the upper part. Clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas flowing in through 40 is supplied to the first processing unit group through the passage 43. Also in the present embodiment, similarly to the above-described first embodiment, a temperature control in which a passage 40 for circulating gas exhausted from the lower part of the heat insulating wall 39 and the first processing unit group 13 to the upper part thereof is arranged. By providing the mechanism, the temperature control in the processing liquid supply unit (BCT, CT, DEV) for performing processing on the wafer W at around normal temperature can be performed more precisely.

As shown in FIG. 13, in the anti-reflection film / resist film coating unit (CT) group 13e, the wafer W is placed on a spin chuck in a cup, and the anti-reflection film is coated thereon. On the other hand, an anti-reflection film coating unit (BCT) 16 for applying an anti-reflection film coating process places the wafer W on a spin chuck in a cup in a two-stage cup to apply a resist solution, and performs a resist coating process on the wafer W. The resist application unit (CT) 17 to be applied is stacked in two stages. In the developing processing unit group 13f, the wafer W is placed on the spin chuck in the cup to supply the developing solution,
A development processing unit (DEV) 26 for performing development processing on the wafer W is stacked in 42 stages.

First and second heating / temperature control processing unit group 1
In 4a and 14b, a heat processing unit (HP) 20 for performing a heat process on the wafer W and a temperature control unit (CPL) 18 for performing a temperature control process on the wafer W are integrated adjacent to each other. Heating / temperature control unit 1
0 are stacked in 12 stages. And
Shutter members 47a and 47b are provided on the side surfaces of the temperature control units of all the heating / temperature control units 10. The heating / temperature control unit 1 according to the present embodiment
The structure of 0 is the same as that of the first embodiment described above, and the description is omitted here.

The structure of the transport device 19 described above is the same as that of the transport devices 19a and 19b of the first embodiment described above, and therefore the description is omitted.

Next, the processing steps in the coating and developing system 1 configured as described above will be described. The operation of the heating / temperature control unit is the same as that of the above-described first embodiment, and will not be described.

In the coating and developing processing system 1, the unprocessed wafer W stored in the cassette C is taken out by the wafer transfer body 11 of the cassette station 2,
Temperature control processing unit (CPL) 18a in first heating / temperature control heat treatment unit 10a of first processing station 3
And is placed on the temperature control plate 25 to perform a temperature control process.

The wafer W subjected to the temperature control processing in the temperature control processing unit (CPL) 18a is transported by the transfer device 19 to the antireflection film coating unit (BCT) in the antireflection film / resist film coating unit (CT) group 13e. The substrate is transported into the substrate 16 and a treatment liquid for an anti-reflection film is applied.

The wafer W to which the processing liquid for the anti-reflection film is applied by the anti-reflection film coating unit (BCT) 16 is transferred by the transfer device 19 to the temperature control unit (CPL) 18a of the first heating / temperature control unit 10a. And placed on the temperature control plate 25. The wafer W placed on the temperature control plate 25 is transferred into the heat processing unit (HP) 20a and subjected to the heat processing.

Thereafter, the wafer W is transferred to the temperature control unit (C).
PL) 18a, and a temperature adjustment process is performed.

The wafer W which has been subjected to the temperature control processing by the temperature control processing unit (CPL) 18a is transferred by the transfer device 19 into the resist coating unit (CT) 17 in the antireflection film / resist coating unit group 13e. The liquid is applied.

The wafer W coated with the resist solution by the resist coating unit (CT) 17 is transported by the transfer device 19.
It is transported into the temperature control processing unit (CPL) 18b of the second heating / temperature control processing unit 10b. Further, the wafer W is transferred into the heat processing unit (HP) 20b, where the heat processing is performed.

Thereafter, the wafer W is transferred into the temperature control processing unit (CPL) 18b, where the temperature control processing is performed.
The wafer W that has been subjected to the temperature control processing by the temperature control processing unit (CPL) 18b is transferred into the peripheral exposure device 34 by the wafer transfer body 37 in the interface unit 5, and the peripheral exposure is performed.

The wafer W on which the peripheral exposure has been performed by the peripheral exposure device 34 is transferred to the buffer cassette 33 by the wafer transfer body 37 and temporarily held therein, or the wafer transfer body 37 and the pre-exposure temperature control unit (not shown). ) And transferred to an exposure apparatus (not shown) via a wafer transfer body.

Next, the wafer W that has been subjected to the exposure processing by the exposure apparatus is transferred from the interface section 5 to the second heating / heating temperature of the second processing station 46 via the wafer carrier, the buffer cassette 33, and the wafer carrier 37. Heating / Temperature Control Unit 10 in Temperature Control Unit Group 14b
b into the temperature control processing unit (CPL) 18b,
A temperature control process is performed.

The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 18b is transferred by the transfer device 19 to the development processing unit (DE) in the development processing unit group 13f.
V) The sheet is transported to 26, where a developing process is performed.

The wafer W which has been subjected to the development processing in the development processing unit (DEV) 26 is transported by the transfer device 19 to the temperature control processing unit (a) of the heating / temperature control processing unit 10a in the first heating / temperature control processing unit group 14a. The heat treatment unit (HP) 20a is conveyed via the CPL 18a to the heat treatment unit (HP) 20a adjacent to the temperature control unit (CPL) 18a, where the heat treatment is performed.

The wafer W subjected to the heat treatment in the heat treatment unit (HP) 20a is transferred to the temperature control processing unit 18a, and further transferred to the wafer transfer member 11 in the cassette station 2.
Is accommodated in the cassette C.

According to the coating and developing processing system of the present embodiment configured as described above, the liquid processing unit (BC
T, CT, DEV), a chemical tower as a processing liquid supply unit is disposed adjacent to the chemical tower, and a heating / temperature control unit is disposed adjacent to the chemical tower, and a temperature control unit of the heating / temperature control unit ( By disposing the CPL) on the chemical tower side, the temperature control unit and the chemical tower are interposed between the heat processing unit and the liquid processing unit of the heating / temperature control unit. This makes it possible to significantly suppress the thermal influence of the heat processing unit on the liquid processing unit side. In the coating and developing processing system, the liquid processing units (BCT, CT, DEV) can be precisely controlled.

Further, according to the coating and developing processing system according to the present embodiment, the liquid processing unit group (antireflection film / resist film coating unit (CT) group 13e, developing unit group 13f) and the heating / temperature control unit Group (first and second
Between the heating / temperature control unit groups 14a, 14b)
Insulating wall 39 and liquid processing unit groups 13e, 13 respectively
f By arranging the passage 40 for circulating the gas exhausted from each lower part to the upper part, the thermal effect of the heat processing unit of the heating / temperature control processing unit on the liquid processing unit group is prevented, and Temperature control in the liquid processing unit group that performs liquid processing on the wafer W in the vicinity can be performed extremely accurately. Further, the passage 40 has a kind of heat insulating means, and the heat insulating wall 39 and the passage 40 are provided between the second processing unit group 14 and the chemical tower 15, thereby providing a structure having double heat insulating means. Become. Therefore, the processing liquid stored in the chemical tower 15 is not easily influenced by the heat of the heat processing unit 20 and the temperature can be easily adjusted.

In each of the above embodiments, the wafer W has been described as an example of the substrate. However, the present invention can be applied to other substrates such as an LCD substrate.

The system configuration of the present invention is not limited to the above embodiments, and various configurations can be considered within the technical idea of the present invention.

For example, not only a resist coating / developing system but also other systems such as an SOD (Spin on Directory) for forming an interlayer insulating film on a substrate.
c) The present invention can be applied to a processing system or the like. The SOD processing system has a coating unit for coating an interlayer insulating film material on a substrate, and a heating / temperature control processing unit for heating and controlling the temperature of the substrate on which the insulating film material is coated. This heating / temperature control processing unit has a heat processing unit and a temperature control processing unit provided adjacent thereto similarly to the heating / temperature control processing unit of the present embodiment,
The heat processing unit in the SOD processing system has a hot plate whose set temperature can be set to 200 to 470 ° C. A system having a coating unit as a liquid processing unit and a unit subjected to such high-temperature processing,
It is very effective to arrange the coating unit and the heating / temperature adjusting unit such that the temperature adjusting unit is arranged on the coating unit side as in the present invention. Alternatively, a processing liquid storage unit for storing a processing liquid to be supplied to the coating unit disposed adjacent to the liquid processing unit is disposed adjacent to the heating / temperature control processing unit, and the temperature control processing unit is further stored in the processing liquid storage unit. It is very effective to arrange it so that it is located on the side of the unit. Thereby, the temperature control in the liquid processing unit group can be performed very precisely.

[0139]

As described above, according to the present invention,
Temperature control in the first processing unit group for performing processing on the substrate at around normal temperature can be precisely performed.

[Brief description of the drawings]

FIG. 1 is a plan view showing a coating and developing processing system according to a first embodiment of the present invention.

FIG. 2 is a front view of the coating and developing system shown in FIG.

FIG. 3 is a cross-sectional view when a region having a temperature control / heating processing unit group in FIG. 1 is cut along a y direction.

FIG. 4 is a cross-sectional view when a region having the temperature adjustment processing unit in FIG. 1 is cut along an x direction.

FIG. 5 is a perspective view illustrating a configuration of a transport device.

FIG. 6 is a plan view illustrating a configuration of a heating / temperature control processing unit.

FIG. 7 is a cross-sectional view illustrating a configuration of the heating / temperature control processing unit illustrated in FIG.

FIG. 8 is a cross-sectional view illustrating a configuration of a temperature control mechanism.

FIG. 9 is a plan view showing a coating and developing processing system according to a second embodiment of the present invention.

FIG. 10 is a front view of the coating and developing system shown in FIG. 9;

11 is a cross-sectional view taken along line AA 'of FIG.

FIG. 12 is a plan view showing a coating and developing processing system according to a third embodiment of the present invention.

FIG. 13 is a front view of the coating and developing system shown in FIG.

FIG. 14 is a cross-sectional view taken along line BB ′ of FIG.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 coating / developing processing system 10 heating / temperature control processing unit 13 first processing unit group 13a antireflection film coating unit (BCT) group 13b resist film coating unit (CT) group 13c first development processing unit group 13d second development process Unit group 13e Antireflection film / resist film coating unit (C
T) group 13f development processing unit group 14 second processing unit group 14a first heating / temperature adjustment processing unit group 14b second heating / temperature adjustment processing unit group 14c third heating / temperature adjustment processing unit group 14d fourth heating / temperature adjustment unit group Temperature control processing unit group 15 Chemical tower 16 Anti-reflection coating unit (BCT) 17 Resist film coating unit (CT) 18 Temperature control unit 19 Transport device 20 Heat processing unit 26 Development processing unit BCT Anti-reflection coating unit (BCT) CPL Temperature control processing unit CT Resist film coating unit (CT) DEV Development processing unit HP Heat processing unit W Wafer W

Claims (7)

[Claims] A first processing unit group in which first processing units for supplying a predetermined liquid onto a substrate and performing liquid processing are stacked in multiple stages; and a heating unit for performing heat processing on the substrate. A second processing unit group in which a second processing unit in which a temperature control unit that performs a temperature control process on the substrate is integrated adjacent to each other is stacked in multiple stages; and each of the first processing units and A transfer device for transferring a substrate to and from each of the second processing units, wherein the temperature control unit of the heating unit and the temperature control unit in each of the second processing units is the first processing unit group A substrate processing apparatus, wherein the first processing unit group and the second processing unit group are arranged adjacent to each other while being positioned on a side. 2. A clean air supply unit for supplying clean air to the first processing unit group, wherein the clean air supply unit evacuates gas from a lower part of the first processing unit group. And circulates the discharged gas to blow out the temperature-controlled gas from the upper part of the first processing unit group. Further, the area where the first processing unit group is disposed and the second processing unit group are disposed. 2. The substrate processing apparatus according to claim 1, further comprising a passage for circulating gas exhausted from a lower part of the first processing unit group to an upper part of the first processing unit group so as to separate the first processing unit group from the set area. 3. A heat insulating wall is provided so as to separate an area in which the first processing unit group is arranged and an area in which the second processing unit group is arranged. The substrate processing apparatus according to claim 1 or 2. 4. A first processing unit group in which a first processing unit for supplying a predetermined liquid onto a substrate and performing liquid processing is stacked in multiple stages, and is disposed adjacent to the first processing unit group. A processing liquid supply unit that supplies the predetermined liquid to each of the first processing units; a heating unit that performs a heating process on the substrate; and a temperature control unit that performs a temperature control process on the substrate. A second processing unit group in which a plurality of second processing units are integrated adjacent to each other and stacked, and a substrate is transferred between each of the first processing units and each of the second processing units. A transport device that performs the processing liquid supply unit and the processing liquid supply unit while the heating unit and the temperature control unit in each of the second processing units are located on the processing liquid supply unit side. The second processing unit group is disposed adjacent to the second processing unit group. A substrate processing apparatus, characterized in that. 5. A clean air supply unit for supplying clean air to the first processing unit group, wherein the clean air supply unit evacuates gas from a lower part of the first processing unit group. And circulates the gas to blow out the temperature-controlled gas from the upper part of the first processing unit group, and further includes a region where the processing liquid supply unit is disposed and a region where the second processing unit group is disposed. 5. The substrate processing apparatus according to claim 4, further comprising a passage for circulating gas exhausted from a lower part of the first processing unit group to an upper part of the first processing unit group so as to divide the first processing unit group. 6. A heat insulating wall is provided so as to separate an area where the processing liquid supply unit is arranged and an area where the second processing unit group is arranged. The substrate processing apparatus according to claim 5. 7. A first processing unit group in which first processing units for supplying a predetermined liquid onto a substrate and performing liquid processing are stacked in multiple stages, and a heating unit for performing heat processing on the substrate. A second processing unit group in which a second processing unit in which a temperature control unit that performs a temperature control process on the substrate is integrated adjacent to each other is stacked in multiple stages; An exposure unit for performing an exposure process on the substrate, wherein the substrate is waited in a temperature control unit of the second processing unit before the substrate is carried into the exposure unit.