JP2000124129A - Processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a film from varying in thickness due to heat released from a heating device. SOLUTION: A resist coater unit 20 is composed of a resist coater, a cooling device group 120, and a first auxiliary transfer device 100 that transfers a wafer W from the resist coater to the cooling device group 120. A development processing device unit 30 is composed of a development processing device, a cooling device group 130, and a second auxiliary transfer device 110 that transfers the wafer W from the development processing device to the cooling device group 130. Heat insulating panels 140 and 150 are each mounted on the units 20 and 30 on their cooling device sides. A first and a second primary transfer device, 80 and 90, are arranged between the units 20 and 30, a first heat treatment unit 40 and a third heat treatment unit 60 are arranged, sandwiching the first primary transfer device 80 between them, and a second heat treatment unit 50 and a fourth heat treatment unit 70 are arranged, sandwiching a second primary transfer device 90 between them.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a processing apparatus.

[0002]

2. Description of the Related Art In a photoresist processing step in manufacturing a semiconductor device, a resist film is formed by applying a resist solution to a substrate such as a semiconductor wafer (hereinafter, referred to as "wafer"), and a predetermined pattern is formed. After the exposure, a developing solution is supplied to the wafer to perform a developing process. In performing such a series of processing, a coating and developing processing apparatus has been conventionally used.

The coating and developing apparatus includes various types of liquid processing apparatuses such as a resist coating apparatus for forming a resist film by applying a resist solution to a wafer and a developing apparatus for developing a wafer after exposure processing. And various heat treatment devices such as a heating device for heating the wafer after resist application and a cooling device for cooling the wafer after heat treatment. These liquid processing apparatuses and heat treatment apparatuses are stacked in multiple stages, respectively, so that the arrangement space in the coating and developing processing apparatus is effectively used. In addition, the transfer of the wafer to the various liquid processing devices and the heat treatment device is performed by a transfer device.
Heat treatment equipment and transport equipment are arranged in a centralized manner.

[0004]

However, as the diameter of today's wafers increases, the size of heat treatment apparatuses and liquid processing apparatuses also tends to increase. Therefore, since the heat treatment device and the liquid treatment device are further arranged in the coating and developing treatment device, the influence of the heat generated from the heating device of the heat treatment device is likely to affect the liquid treatment device. In addition, as the size of the heating device serving as a heat source increases, the amount of heat generated from the heating device also increases. As a result, liquid processing equipment that is sensitive to temperature changes,
For example, there is a possibility that the thickness of the resist film formed in the resist coating apparatus may change.

[0005] The present invention has been made in view of such a point, and even if the heating apparatus becomes large due to the large diameter of a substrate such as a wafer, it is possible to prevent the film thickness of the processing solution from being changed by heat. The purpose is to provide a new processing device that can be suppressed.

[0006]

According to a first aspect of the present invention, there is provided a liquid processing apparatus for supplying a processing liquid to a substrate to perform processing, and a heating apparatus for heating the substrate to a predetermined temperature. A cooling device for cooling a substrate to a predetermined temperature, wherein a liquid processing unit is constituted by the liquid processing device and the cooling device, and a heating device and a cooling device belonging to the liquid processing unit are further provided. A main transfer device for transferring the substrate between the liquid processing units, and a sub-transfer device for transferring the substrate between the liquid processing device and the cooling device in the liquid processing unit, at least facing the heating device. A processing apparatus is provided, wherein a heat insulation member surrounding the portion is provided in the liquid processing unit.

In the processing apparatus according to the first aspect of the present invention, the heat generated by the heating apparatus is not transmitted to the liquid processing unit because the heat blocking member surrounding the portion facing the heating apparatus is provided. . Therefore, the liquid processing apparatus is not affected by heat, and can form a film of a processing liquid such as a resist film with a predetermined thickness. Further, since the liquid processing unit has a cooling device, the temperature rise of the atmosphere in the liquid processing unit can be suppressed. Therefore, the processing by the liquid processing apparatus can be suitably performed. Further, in the liquid processing unit, the substrate is transferred by a sub-transfer device that does not transfer a high-temperature substrate immediately after heating. Therefore, the substrate can be stably transferred without changing the film thickness in the liquid processing unit, and the change in the film thickness of the processing liquid such as a resist can be more reliably prevented.

According to the second aspect, a liquid processing apparatus for supplying a processing liquid to the substrate to perform processing, a cooling apparatus for cooling the substrate to a predetermined temperature, and transporting the substrate between the liquid processing apparatus and the cooling apparatus. A first liquid processing unit and a second liquid processing unit having a sub-transport device, and a heating device for heating the substrate to a predetermined temperature, wherein the first liquid processing unit and the second liquid processing unit are A main transfer device that is disposed to face and transfers a substrate between the cooling device belonging to at least the first or second liquid processing unit and the heating device includes the first liquid processing unit and the second liquid processing unit. The liquid processing unit is provided with a heat shielding member disposed between the liquid processing units and surrounding at least a portion facing the heating device.

According to the second aspect of the present invention, similarly to the first aspect, it is possible to prevent a change in the film thickness of the processing liquid due to heat, and to preferably perform the liquid processing in the liquid processing unit. Can be. Further, since the number of liquid processing units is larger than that of the first aspect, the number of substrates to be processed further increases. Also,
Efficient transfer of substrates by the main transfer device and integration of the device as a whole can be achieved.

According to a third aspect of the present invention, in the processing apparatus according to the second aspect, the heating device is provided on both sides of the main transfer device, and the first liquid processing unit and the second liquid processing unit. It is characterized by being arranged between.

In the processing apparatus according to the third aspect of the present invention, since more heating devices are provided, the number of substrates to be processed can be increased, and consolidation can be achieved.

According to a fourth aspect of the present invention, there are provided two liquid processing apparatuses for performing processing by supplying a processing liquid to the substrate, a cooling apparatus for cooling the substrate to a predetermined temperature, and a substrate between the liquid processing apparatus and the cooling apparatus. A first liquid processing unit and a second liquid processing unit having a sub-transport device for transporting the substrate; and a heating device for heating the substrate to a predetermined temperature. Liquid treatment devices are arranged on both sides of the device, and the first liquid treatment unit and the second liquid treatment unit are arranged such that the cooling devices belonging to each unit face each other.
A first main transfer device that is disposed opposite to transfer a substrate between a cooling device and a heating device belonging to the first liquid processing unit, and a cooling device and a heating device belonging to the second liquid processing unit. A second main transfer device for transferring the substrate is provided between the first liquid processing unit and the second liquid processing unit.
A processing apparatus is provided, wherein each of the liquid processing units is provided with a heat blocking member that is arranged along a facing direction of these units and surrounds at least a portion facing the heating apparatus.

In the processing apparatus according to the fourth aspect, the first main transfer device and the second main transfer device can efficiently transfer the substrate, and can be arranged in a centralized manner. Further, since a large number of liquid processing apparatuses are arranged, the number of substrates to be processed also increases.

According to a fifth aspect of the present invention, in the processing apparatus of the fourth aspect, both sides of the first main transport unit and the second main transport unit, and the first liquid processing unit and the second liquid transport unit are connected to each other. A heating device is disposed between each of the liquid processing units.

In the processing apparatus according to the fifth aspect, since the number of heating devices is increased as compared with the fourth aspect, the number of substrates to be processed can be further improved. In addition, a centralized arrangement becomes possible.

In each of these processing devices,
As described in 8, it is more preferable that the atmosphere in the liquid processing unit is different from the atmosphere in which the main transfer device is arranged. That is, by setting the atmosphere according to the degree of cleanliness and the cleanliness required by the processing, each processing can be efficiently and suitably performed. Claims 9-1
As described in 1, it is preferable that the pressure in the liquid processing unit is set higher than the pressure of the atmosphere in which the main transfer device is disposed. By doing so, it is possible to prevent intrusion of particles and the like from the outside.

In each of the above processing apparatuses, if a plurality of the liquid processing units and the plurality of cooling units of the liquid processing unit are provided, the processing capacity is improved quantitatively. Claims 13 and 14
As described in (1), if a plurality of cooling devices and heating devices are vertically stacked, the processing capacity can be improved quantitatively without increasing the floor occupation area. In these cases, the number of mounted liquid processing apparatuses may be increased by stacking the liquid processing apparatuses in the vertical direction.

Still further, as described in claim 15,
A configuration may be provided that includes a cassette station capable of mounting a plurality of cassettes capable of storing a plurality of substrates, and a loading / unloading mechanism for loading / unloading the substrates with respect to the cassette on the cassette station. In that case, as in claim 16,
The loading / unloading mechanism does not require a separate dedicated transport mechanism as long as the substrate unloaded from the cassette can be transported to the heating device.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. 1 to 3 show the appearance of a coating and developing apparatus according to the present embodiment. FIG. 1 is a plan view, and FIGS. 2 and 3 are side views.

As shown in FIG.
A cassette station 2 for loading and unloading a plurality of wafers W, for example, 25 substrates, from the outside to the coating and developing apparatus 1 in cassette units, and loading and unloading wafers W to and from the cassette C; A processing station 3 in which various single-wafer processing units for performing predetermined processing are arranged, and an interface unit 5 for transferring a wafer W between an adjacent exposure apparatus 4 are integrally connected. It has the following configuration.

In the cassette station 2, a plurality of cassettes C are positioned in the X direction (the vertical direction in FIG. 1) with the entrance and exit of the wafer W facing the processing station 3 at the position of the positioning projection 10a on the cassette mounting table 10 serving as the mounting section. Direction). The wafer W can be moved in the arrangement direction (X direction) of the cassette C and in the arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C. A wafer transfer body 11 as a loading / unloading mechanism is movable along a transfer path 12 so that each cassette C can be selectively accessed. The wafer carrier 11 is also configured to be rotatable in the θ direction. The wafer carrier 11 is also provided to an alignment device 42 belonging to the first heat treatment unit 40 and an extension device 52 belonging to the second heat treatment unit 50 disposed in the treatment station 3 to be described later. It is configured to be accessible.

In the processing station 3, a resist coating unit 20 is arranged on the front side (lower side in FIG. 1), and a developing unit 30 is arranged on the back side. FIG. 2 when the processing station 3 is viewed from the cassette station 2 side.
The resist coating device unit 20 and the development processing device unit 30 will be described based on the following. In the resist coating device unit 20, a resist solution is applied to the wafer W in the cup CP to form a resist film having a predetermined thickness. Resist coating devices 21 and 22 are stacked in order from the bottom, for example, in two stages. The developing units 31 and 32 that supply a developing solution to the wafer W in the cup CP and perform a predetermined developing process are sequentially supplied to the developing unit 30 from the bottom.
For example, they are stacked in two stages.

The resist coating unit 20 and the developing unit 30 will be described with reference to FIG. 3, which shows the processing station 3 viewed from the interface section 5 side. 22, the same resist coating apparatus 23, 2
4 are stacked in order from the bottom, for example, in two stages.
2, the same developing processing devices 33 and 34 are stacked in order from the bottom, for example, in two stages. Therefore, a total of four resist coating devices 21,
22, 23, 24, and a total of four developing processing units 31, 32, 3 are provided in the developing processing unit 30.
3, 34 are provided.

Between the resist coating unit 20 and the developing unit 30, a heat treatment unit having various heating units for heating the wafer W to a predetermined temperature is arranged. The first heat treatment unit 40 is used as the heat treatment unit.
And the second heat treatment unit 50 and the third heat treatment unit 6
0 and a fourth heat treatment unit 70, the first heat treatment unit 40 and the second heat treatment unit 50 are arranged on the cassette station 2 side, and the third heat treatment unit 60 and the fourth heat treatment unit 70 are arranged on the interface unit 5 side, respectively. ing.

The first heat treatment unit 40 includes, for example, an adhesion device 41 for improving the adhesion between the wafer W and the resist, an alignment device 42 for aligning the wafer W, an extension device 43 for waiting the wafer W, and a resist. Various heat treatment apparatuses including a pre-baking apparatus 44 and 45 for heating the coated wafer W and a post-baking apparatus 46 for heating the developed wafer W,
For example, five layers are stacked in order from the bottom. The second heat treatment unit 50 includes, for example, an alignment device 51,
Extension device 52 and pre-baking device 5
3, 54 and the post-baking devices 55, 56 are stacked in, for example, five stages from the bottom. The first
Each heating device belonging to the heat treatment unit 40 includes a wafer W
A wafer loading port 47 through which the wafer W can be loaded and a wafer loading port 48 through which the wafer W can be unloaded are separately provided. Each heating device belonging to the second heat treatment unit 50 has a wafer loading port 57 and a wafer loading port. An outlet 58 is provided separately.

The third heat treatment unit 60 includes, for example, an alignment device 61, an extension device 62, pre-baking devices 63 and 64, and a wafer W after exposure processing.
Is heated to a predetermined temperature, and a post-baking device 66 and a post-baking device 66 are stacked in, for example, five stages from the bottom. The fourth heat treatment unit 70 includes, for example, an alignment device 71, an extension device 72, and pre-baking devices 73 and 74.
And a post-exposure baking device 75 and a post-baking device 76 are stacked in, for example, five stages from the bottom. Each heating device of the third heat treatment unit 60 is provided with a wafer carry-in port 67 and a wafer carry-out port 68, and each heating device of the fourth heat treatment unit 70 has a wafer carry-in port 77 and a wafer carry-in port. An outlet 78 is provided separately.

A first main transfer device 80 is provided between the first heat treatment unit 40 and the third heat treatment unit 60, and a second main transfer device 80 is provided between the second heat treatment unit 50 and the fourth heat treatment unit 70.
A main transfer device 90 is arranged. The first main transfer device 80 and the second main transfer device 90 have basically the same configuration, and the configuration of the first main transfer device 80 will be described with reference to FIG. Is provided with a wafer transfer means 84 which can move up and down in the vertical direction (Z direction) inside a cylindrical support body 83 composed of a pair of opposed wall portions 81 and 82 connected at an upper end and a lower end. The cylindrical support 83 is connected to a rotation shaft of a motor 85, and rotates integrally with the wafer transfer means 84 about the rotation shaft by the rotation driving force of the motor 85. Therefore, the wafer transfer means 84 is rotatable in the θ direction.

On the transfer base 86 of the wafer transfer means 84, for example, two tweezers 87, 88 for holding the wafer W are provided vertically. The tweezers 87 and 88 have basically the same configuration, and have a shape and size that allow them to pass through a side opening 89 between the two walls 81 and 82 of the cylindrical support 83. Each of the tweezers 87 and 88 is configured such that it can be moved back and forth by a motor (not shown) built in the transport base 86. Note that the tweezers 97 and 98 are also vertically provided in the second main transfer device 90 as in the first main transfer device 80.

The first in the resist coating unit 20
The sub-transport device 100 and the second sub-transport device 110 are arranged in the developing unit 30. First
The sub-transport device 100 and the second sub-transport device 110 have basically the same configuration. The configuration of the first sub-transport device 100 will be described with reference to FIG.
Is a wafer transfer means 1 which can be moved up and down in the vertical direction (Z direction).
01 is equipped. The wafer transfer means 101 is supported by a rotating shaft 103 which is rotated by the rotational driving force of a motor 102, and the wafer transfer means 101 is configured to be rotatable in the θ direction. On the transfer base 104 of the wafer transfer means 101, two tweezers 107 and 108 for holding the wafer W are respectively provided above and below. The tweezers 107 and 108 have basically the same configuration, and are independently movable back and forth by a motor (not shown) built in the transfer base 104. Note that the tweezers 117 and 118 having basically the same configuration as the tweezers 107 and 108 are also provided in the second sub-transport device 110 in the upper and lower directions.

A cooling device group 120 is arranged in the resist coating device unit 20, and a cooling device group 130 is arranged in the development processing device unit 30. Cooling device group 1
The cooling device group 120 and the cooling device group 130 have basically the same configuration. The configuration of the cooling device group 120 will be described with reference to FIG. , 122 and 123 are stacked, for example, in three stages. These cooling devices 121, 122, 1
A cooling mounting table 124 having a circulation path (not shown) through which constant temperature water or the like whose temperature has been adjusted to 23 ° C. flows, for example.
And the cylinder 12 from the hole provided in the cooling mounting table 124.
For example, three elevating pins 126 are provided so as to be movable up and down by the drive of No. 5. Therefore, the lifting pin 12
The wafer W supported by the wafer 6 is mounted on the cooling mounting table 124, so that the wafer W can be cooled.

The cooling device 123 located at the uppermost stage
Is provided with a wafer mounting table 128 for holding the wafer W on standby with the support pins 127 supporting the wafer W.
The cooling devices 131 and 13 are provided in the developing device unit 30 in the same manner as in the resist coating device unit 20.
2, 133 are stacked in order from the bottom, and a wafer mounting table 138 provided with support pins 137 is provided above the uppermost cooling device.

In the resist coating unit 20, the resist coating units 21, 22 and the resist coating units 23, 2
7 are arranged as shown in FIG. 7, and a first sub-transport device 100 and a cooling device group 120 are arranged between the resist coating devices 21 and 22 and the resist coating devices 23 and 24. In the developing unit 30, the developing units 31, 32 and the developing units 33, 34 are arranged as shown in FIG. The second sub-transport device 110 and the cooling device group 130 are disposed in the first position. With such an arrangement, it is possible to collectively arrange the respective devices in the resist coating device unit 20 and the development processing device unit 30.

The resist coating unit 20 includes the first
On the surface facing the heat treatment unit 40 and the third heat treatment unit 60, a heat insulating panel 140 for blocking transmission of heat generated in the heat treatment units 40, 50, 60, 70 is attached. A heat insulating panel 150 is attached to the development processing unit 30 on a surface facing the second heat treatment unit 50 and the fourth heat treatment unit 70. The tweezers 8 of the first main transfer device 80 are provided on the heat insulating panel 140.
The wafer loading / unloading port 141 through which the wafers W held by the wafers 7 and 88 can pass freely is provided on the heat insulating panel 150 by the second main transfer device 9.
The wafer loading / unloading port 151 through which the wafer W held by the tweezers 97 and 98 of No. 0 can freely pass is provided, respectively.

The first main transfer device 80 includes various heating devices belonging to the first heat treatment unit 40 and the third heat treatment unit 60 and the cooling device 1 belonging to the resist coating device unit 20.
The second main transfer device 90 transfers the wafer W between the second heat treatment unit 50 and the fourth heat treatment unit 70 and the developing treatment device unit 30. The wafer W is transported between the cooling devices 131, 132, 133 belonging to and the wafer mounting table 138. The first sub-transport device 100 includes resist coating devices 21, 22, 23, 2
4 and the cooling devices 121, 122, 123 and the wafer mounting table 128 to transfer the wafer W to the second sub-transfer device 1.
Numeral 10 is configured to transfer the wafer W between the developing devices 31, 32, 33, and 34, the cooling devices 131, 132, and 133, and the wafer mounting table 138. As described above, the resist coating device unit 20, the development processing device unit 30, the heat treatment units 40, 50, 60, and 7
0, the main transfer devices 80, 90 are all arranged in the processing station 3.

The interface unit 5 is provided with a wafer carrier 160 for carrying the wafer W. The wafer carrier 160 moves in the X direction along the carrier rail 161 and moves in the Z direction (vertical direction). , .Theta. Directions can be freely changed. The wafer carrier 160 includes the exposure device 4
The wafer W can be transferred between the extension device 62 belonging to the third heat treatment unit 60, the extension device 72 belonging to the fourth heat treatment unit 70, and the peripheral exposure device 162 for exposing the peripheral portion of the wafer W. It is configured as follows.

Next, the state of the atmosphere of the coating and developing treatment apparatus 1 will be described with reference to a diagram schematically showing a cross section of FIG. Downflow DF is provided on the ceiling of the main transfer area 199 where the first main transfer device 80 and the second main transfer device 90 are arranged.
And a filter 200 for removing particles and the like is arranged, and an exhaust mechanism 201 for exhausting and collecting the downflow DF is provided below the filter 200. The exhaust mechanism 201 includes an exhaust mechanism 20.
The temperature and / or humidity adjusting device 200 for setting the temperature and / or humidity of the downflow DF exhausted and recovered by 1 to desired conditions and sending it to the filter 200 is connected.
By adjusting the amount of air blown from the filter 200 and the amount of exhaust by the exhaust mechanism 201, the main transport area 199 is controlled.
Is set to a desired pressure PA.

Downflows DF1 are provided in the areas belonging to the resist coating apparatus unit 20 in which the resist coating apparatuses 21, 22 and the first sub-transport apparatus 100 and the cooling apparatus group 120 are arranged, that is, in the respective ceiling areas of the coating areas. Filters 203 and 2 for forming and removing particles and the like
04 are arranged. In the lower position, the down flow DF1 from these filters 203 and 204 is located.
Exhaust mechanisms 205 and 206 for exhausting and recovering the exhaust gas are provided. These exhaust mechanisms 205 and 206 set the temperature and / or humidity of the downflow DF1 exhausted and collected by the exhaust mechanisms 205 and 206 to desired conditions, and send the temperature and humidity to the corresponding filters 203 and 204, respectively. An adjusting device 207 is connected. The amount of air blown from the filters 203 and 204 and the exhaust mechanisms 205 and 206
The pressure in the application area is set to a desired pressure PB by adjusting the displacement of the air.

A downflow DF is provided in an area belonging to the developing apparatus unit 30 in which the developing apparatuses 31 and 32, the second sub-transport apparatus 110 and the cooling apparatus group 130 are arranged, that is, in each of the ceilings of the developing areas. Filters 208 and 209 are formed and formed to remove particles and the like. Further, exhaust mechanisms 210 and 211 for exhausting and recovering the downflow DF2 from the filters 208 and 209 are provided below the filter.
These exhaust mechanisms 210, 211 are
The temperature and / or humidity of the downflow DF2 exhausted and recovered by the 211 are set to desired conditions, and a temperature / humidity adjusting device 212 for sending the downflow DF2 to the corresponding filters 208 and 209 is connected. And filters 208, 2
The pressure in the developing region is set to a desired pressure PC by adjusting the amount of air blown from 09 and the amount of exhaust by the exhaust mechanisms 210 and 211.

These areas, that is, the main transport area 19
9. The relationship between the pressures in the coating area and the development area is as follows:
The main transport area 199, the pressure of the atmosphere in which the coating and developing treatment apparatus 1 is disposed, for example, the pressure in the clean room or the like.
It is preferable that the pressure in each of the coating region and the developing region is set higher. As a result, entry of organic substances such as amines such as particles and alkali components into the coating and developing treatment apparatus 1 can be further suppressed, and adverse effects on substrate processing can be suppressed.

The pressure relationship between the main transport area 199 and the application area and the development area will be described. The pressure PB in the application area and the pressure PC in the development area are higher than the pressure PA in the main transport area 199. Preferably, it is set high. As a result, it is possible to prevent the organic substances such as amines such as particles and alkali components from entering the coating area and the developing area, which are the processing areas of the liquid processing apparatus, from the main transport area 199. Processing can be suitably performed.

Further, the filters 208 and 2 in the developing region in which an organic substance such as an amine such as an alkali component is most problematic.
It is preferable that 09 further include a mechanism for removing a chemical component, and it is preferable to set different desired atmospheres in each region.

The coating and developing apparatus 1 according to the present embodiment
Is configured as described above. First, in the cassette station 2, the wafer carrier 11 accesses the cassette C and takes out one unprocessed wafer W. Next, the wafer carrier 11 enters the first heat treatment unit 40 from the wafer entrance 47 and removes the wafer W from the first heat treatment unit 40.
The wafer W is carried into the alignment device 42 for alignment. After that, the first
With the wafer W held by the tweezers 88 of the main transfer device 80, the wafer W is carried into the adhesion device 41 belonging to the first heat treatment unit 40.

Next, the wafer W after the completion of the adhesion process is held by the tweezers 87 of the first main transfer unit 80, transferred to the cooling unit group 120 from the wafer loading / unloading port 141, and transferred into the cooling unit 121. The wafer W that has been subjected to the cooling process by the cooling device 121 is carried into, for example, a resist coating device 21 belonging to the resist coating device unit 20 while being held by the tweezers 108 of the first sub-carrier device 100. The wafer W on which the predetermined resist coating has been completed by the resist coating device 21 is then transferred to the first sub-transfer device 1.
While being held by the tweezers 107, the wafer is conveyed to the cooling device group 120, and waits on support pins 127 provided on the wafer mounting table 128.

Thereafter, the wafer W is transferred from the wafer mounting table 128 to the third heat treatment unit 60 by the first main transfer device 80.
Is transported to the pre-baking device 63 belonging to the third heat treatment unit 60 by the tweezers 88,
Heat treatment is performed after resist application and before exposure processing. The wafer W after the completion of the heat treatment is carried into the extension device 62 belonging to the same third heat treatment unit 60, and stands by there. Next, the wafer W is taken out by the wafer carrier 160 that has entered through the wafer carry-out port 68, and is carried from the extension device 62 to the peripheral exposure device 162. The wafer W from which the unnecessary resist film at the peripheral portion has been removed by the peripheral exposure device 162 is transferred to the exposure device 4 and subjected to a predetermined exposure process.

The wafer W having been subjected to the exposure processing is held by the wafer carrier 160, and this time the fourth heat treatment unit 70
Is carried into the extension device 72 through the wafer carry-in port 77. Next, the wafer W is unloaded from the extension device 72 by the tweezers 98 of the second main transfer device 90 and is loaded into the post-exposure baking device 75 belonging to the same fourth heat treatment unit 70. In the post-exposure baking device 75, the wafer W is subjected to a heating process after the exposure process.

The wafer W having been subjected to the heat treatment is the second wafer.
While being held by the tweezers 98 of the main transfer device 90,
The wafer is transferred from the wafer loading / unloading port 151 to the cooling device group 130 in the development processing device unit 30, and is loaded into the cooling device 131. The wafer W cooled by the cooling device 131
It is taken out by the tweezers 118 of the sub-transport device 110 and carried into the developing device 31. The wafer W that has been subjected to the predetermined development processing by the development processing device 31 is supported on the support pins 137 of the wafer mounting table 138 while being held by the tweezers 117 of the second sub-carrier device 110.

After that, the wafer W is held by the tweezers 98 of the second main transfer unit 90 and is transferred from the wafer mounting table 138 to the post-baking unit 55 belonging to the second heat treatment unit 50 via the wafer transfer port 151. The wafer W that has been subjected to the heat treatment after the development processing by the post-baking device 55 is carried into the extension device 52,
Wait on the spot.

Thereafter, the wafer W is taken out of the extension device 52 by the wafer carrier 11 that has entered through the wafer outlet 58, and is stored in the cassette C on the cassette mounting table 10. Thus, a series of coating and developing processing steps for the wafer W is completed.

The coating and developing apparatus 1 according to the present embodiment
Then, the heat treatment units 40, 50, and 50 are provided by the heat insulating panel 140 attached to the resist coating unit 20.
The heat generated by the heating devices belonging to 60 and 70 is applied to the resist coating devices 21 and 22 in the resist coating device unit 20.
Not transmitted to 23,24. Further, the heat insulation panel 150 attached to the development processing device unit 30
The heat generated by the heating devices belonging to the heat treatment units 40, 50, 60, 70 is not transmitted to the developing devices 31, 32, 33, 34 in the developing device unit 30. Therefore, even if the size of the heating device is increased and the heat generated from these heating devices is larger than in the past, the liquid processing of the wafer W, that is, the resist coating process and the developing process can be performed at a suitable temperature. As a result, it is possible to prevent a change in the thickness of the resist film applied to the wafer W.

Further, by providing cooling units 121, 122 and 123 in the resist coating unit 20,
The temperature rise in the resist coating unit 20 can be suppressed. Therefore, the resist coating devices 21, 22, 2
In Nos. 3 and 24, the resist coating process can be performed in a suitable temperature atmosphere for the wafer W. By providing the cooling devices 131, 132, and 133 in the developing device unit 30, it is possible to suppress a rise in the temperature inside the developing device unit 30. Therefore, the development processing devices 31 and 3
Similarly to the case of the resist coating device unit 20, the development process on the wafer W can be performed in a suitable temperature atmosphere in 2, 33, and 34 as well.

The transfer of the wafer W in the resist coating unit 20 is performed by the first sub-transfer device 100 which does not transfer the high-temperature wafer W immediately after heating. Therefore, the tweezers 107 and 108 of the first sub-transport device 100
Does not take heat, and the resist film formed on the wafer W is not affected by the heat from the tweezers 107 and 108. As a result, the wafer W can be stably transferred without changing the film thickness in the resist coating unit 20.

Since the resist coating devices 21, 22, 23, 24, the first sub-transport device 100, and the cooling devices 121, 122, 123 can be centrally arranged in the resist coating device unit 20, the first The transfer process of the wafer W of the transfer device 100 is shortened, and the transfer of the wafer W can be performed quickly. Similarly, in the development processing unit 30, the second
The transfer process of the wafer W by the sub transfer device 110 is shortened, and the transfer of the wafer W can be performed quickly. As a result, the wafer W
Can be improved.

In the processing station 3, the resist coating unit 20 and the developing unit 30
And heat treatment units 40, 50, 60 and 70 are collectively arranged, and the resist coating unit 2
As described above, the apparatuses are collectively arranged in the unit 0 and the development processing unit 30. Accordingly, it is possible to reduce the size of the entire coating and developing apparatus 1. Since the various heating devices belonging to the heat treatment units 40, 50, 60, and 70 are provided with a wafer carrying-in port and a wafer carrying-out port separately, the loading and unloading of the wafer W by the main transfer devices 80 and 90 can be performed efficiently. become able to.

In the above embodiment, an example was described in which the heat insulating panel 140 was attached to the surface of the resist coating unit 20 facing the first heat treatment unit 40 and the third heat treatment unit 60. The heat insulation panel 140 is not limited to the
May be mounted so as to surround the entire circumference of the. Similarly, in the case of the development processing unit 30, the heat insulating panel 150 may be attached so as to surround the entire circumference of the development processing unit 30.

Further, the cooling devices 123 and 133 may be used merely as a wafer mounting table. Further, the substrate to be used is not limited to the wafer W, and may be, for example, an LCD substrate.

[0056]

According to the first to fifth aspects of the present invention, the heat generated by the heating device is not transmitted to the liquid processing unit by the heat blocking member. Therefore, it is possible to prevent a temperature rise in the liquid processing apparatus belonging to each unit, and to prevent a change in the film thickness of the processing liquid due to heat, thereby performing a suitable liquid processing.
The cooling device suppresses an increase in the temperature of the atmosphere in the liquid processing unit, and the substrate is transported in the liquid processing unit by a sub-transport device that does not transport a high-temperature substrate immediately after heating.
Therefore, it is possible to stably transfer the substrate without a change in film thickness due to heat.

In particular, according to the second to fifth aspects of the present invention, the number of substrates to be processed is increased by disposing more liquid processing apparatuses and heating apparatuses than in the first aspect. Further, by arranging the devices in a concentrated manner as compared with the first aspect, it is possible to reduce the size of the entire device.

Further, if the atmospheres are different, it is possible to carry out appropriate atmosphere control according to the contents of each processing, thereby realizing efficient and suitable processing. is there. If the pressures are different as in claims 9 to 11, it is possible to prevent particles and the like from entering a high pressure region.

According to the twelfth to fourteenth aspects, the processing capacity of the substrate is quantitatively improved, and especially in the case of the thirteenth and fourteenth aspects, the improvement can be realized without increasing the floor occupation area. Is possible. Further, according to the present invention, the substrate can be smoothly transferred between the processing apparatus and the cassette storing the substrate. In this case, in particular, according to the configuration of the sixteenth aspect, a dedicated loading / unloading mechanism is not required.

[Brief description of the drawings]

FIG. 1 is a plan view of a coating and developing apparatus according to an embodiment of the present invention.

FIG. 2 is a side view of the coating and developing apparatus of FIG. 1 as viewed from a cassette station side.

FIG. 3 is a side view of the coating and developing apparatus of FIG. 1 as viewed from an interface unit side.

FIG. 4 is a perspective view of a first main transport unit provided in the coating and developing apparatus of FIG. 1;

FIG. 5 is a perspective view of a first sub-transport device provided in the coating and developing apparatus of FIG. 1;

FIG. 6 is an explanatory diagram of a cooling device group provided in the coating and developing treatment apparatus of FIG. 1;

7 is an explanatory diagram of a resist coating unit provided in the coating and developing apparatus of FIG. 1;

FIG. 8 is an explanatory diagram of a development processing unit provided in the coating and development processing apparatus of FIG. 1;

FIG. 9 is an explanatory diagram showing a state of an atmosphere in the coating and developing treatment apparatus of FIG. 1;

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 coating / developing processing apparatus 2 cassette station 3 processing station 5 interface unit 20 resist coating apparatus unit 30 developing processing unit 40 first heat treatment unit 50 second heat treatment unit 60 third heat treatment unit 70 fourth heat treatment unit 80 first main transfer device 90 second main transfer device 100 first sub transfer device 110 second sub transfer device 120, 130 cooling device group 140, 150 heat insulating panel C cassette W wafer

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 21/30 564C 569C

Claims (16)

[Claims] 1. A processing apparatus comprising: a liquid processing apparatus for performing processing by supplying a processing liquid to a substrate; a heating apparatus for heating the substrate to a predetermined temperature; and a cooling apparatus for cooling the substrate to a predetermined temperature. A liquid processing unit comprising the liquid processing device and the cooling device, a main transfer device for transferring a substrate between a heating device and a cooling device belonging to the liquid processing unit, and a liquid processing unit provided in the liquid processing unit; A sub-transport device for transporting the substrate between the liquid processing device and the cooling device in the unit, wherein a heat shut-off member surrounding at least a portion facing the heating device is provided in the liquid processing unit. Do,
Processing equipment. 2. A liquid processing apparatus for performing processing by supplying a processing liquid to a substrate, a cooling apparatus for cooling the substrate to a predetermined temperature, and a sub-transport apparatus for transporting the substrate between the liquid processing apparatus and the cooling apparatus. A first liquid processing unit and a second liquid processing unit, and a heating device for heating the substrate to a predetermined temperature, wherein the first liquid processing unit and the second liquid processing unit are arranged to face each other, and at least A main transfer device for transferring a substrate between the cooling device belonging to the first or second liquid processing unit and the heating device is disposed between the first liquid processing unit and the second liquid processing unit. A heat shielding member surrounding at least a portion facing the heating device is provided in each of the liquid processing units. 3. The apparatus according to claim 2, wherein the heating device is disposed on both sides of the main transfer device and between the first liquid processing unit and the second liquid processing unit. The processing device according to the above. 4. A liquid processing apparatus for supplying a processing liquid to a substrate to perform processing, a cooling apparatus for cooling the substrate to a predetermined temperature, and a sub-transport for transporting the substrate between the liquid processing apparatus and the cooling apparatus. A first liquid processing unit and a second liquid processing unit each having a device, and a heating device for heating a substrate to a predetermined temperature. In each of the liquid processing units, liquid is provided on both sides of a cooling device and a sub-transport device. A processing device is disposed, and the first liquid processing unit and the second liquid processing unit are disposed to face each other such that the cooling devices belonging to each unit face each other;
A first main transfer device that transfers a substrate between a cooling device and a heating device belonging to a first liquid processing unit, and a substrate is transferred between a cooling device and a heating device belonging to a second liquid processing unit. A second main transfer unit disposed between the first liquid processing unit and the second liquid processing unit along a direction in which the units are opposed to each other, and at least surrounding the portion facing the heating device; A processing device, wherein a member is provided in each of the liquid processing units. 5. A heating device is disposed between each of the first main transfer device and the second main transfer device and between the first liquid processing unit and the second liquid processing unit. The processing device according to claim 4, characterized in that: 6. The processing apparatus according to claim 1, wherein an atmosphere in the liquid processing unit is different from an atmosphere in which the main transfer device is arranged. 7. An atmosphere in the first liquid processing unit and the second liquid processing unit, and an atmosphere in which the main transfer device is arranged is different from each other. A processing device according to claim 1. 8. An atmosphere in the first liquid processing unit and the second liquid processing unit, which is different from an atmosphere in which the first main transport device and the second main transport device are arranged. The processing apparatus according to claim 4, wherein the processing apparatus is characterized in that: 9. The processing apparatus according to claim 1, wherein a pressure in the liquid processing unit is set higher than a pressure of an atmosphere in which the main transfer device is disposed. 10. The apparatus according to claim 1, wherein a pressure in the first liquid processing unit and a pressure in the second liquid processing unit are set higher than a pressure of an atmosphere in which the main transfer device is disposed. 8. The processing apparatus according to 2, 3, or 7. 11. The pressure inside the first liquid processing unit and the second liquid processing unit is set higher than the pressure of the atmosphere in which the first main transfer device and the second main transfer device are arranged. 9. The method of claim 4, 5 or 8, wherein
A processing device according to claim 1. 12. The liquid processing unit of claim 1, wherein a plurality of liquid processing units and a plurality of cooling units are provided. Or 11
A processing device according to any one of the above. 13. The cooling device according to claim 1, wherein a plurality of cooling devices are vertically stacked.
The processing apparatus according to any one of 5, 6, 7, 8, 9, 10, 11, and 12. 14. The heating device according to claim 1, wherein a plurality of heating devices are vertically stacked.
The processing device according to any one of 5, 6, 7, 8, 9, 10, 11, 12, and 13. 15. A cassette station capable of mounting a plurality of cassettes capable of storing a plurality of the substrates, and a loading / unloading mechanism for loading / unloading the substrates with respect to the cassettes on the cassette station. , Claims 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 1
15. The processing apparatus according to any one of 2, 13, and 14. 16. The processing apparatus according to claim 15, wherein the loading / unloading mechanism is capable of transporting the substrate unloaded from the cassette to the heating device.