JP2012156569A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which the throughput can be enhanced without increasing the installation area of the substrate processing apparatus.SOLUTION: The substrate processing apparatus includes a processing block which has a plurality of cells to be stacked. Each cell is provided with processing units PHP, CP, and the like (PHP, CP, and the like), a main conveyance mechanism T(T), a blow-out unit 61, and a discharge unit 62. The discharge unit 62 and the blow-out unit 61 are stacked in a transport space, and separate the transport space for each cell.

Description

  The present invention relates to a substrate processing apparatus for performing a series of processes on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”).

  Conventionally, as this type of apparatus, there is an apparatus that forms a resist film on a substrate, exposes the substrate on which the resist film is formed with a separate exposure machine, and develops the exposed substrate. Specifically, various chemical processing units such as a resist film forming coating processing unit and a heat treatment unit are provided together with a single main transport mechanism to form one block, and a plurality of such blocks are arranged side by side to perform substrate processing. The device is configured. In this apparatus, a substrate is transferred to each block, and processing is performed in each block (see, for example, Patent Document 1).

JP 2003-324139 A

However, the conventional example having such a configuration has the following problems.
That is, in the conventional apparatus, the main transport mechanism requires 5 to 10 transport processes to process one substrate in the block, and each transport process takes about several seconds. Assuming that the number of transport steps is 6 and each takes 5 seconds, the throughput in the block can be up to 30 seconds per substrate (120 substrates per hour). However, since there is not much room for reducing the number of transport steps of a single main transport mechanism or shortening the time required for each transport step, it is difficult to further increase the throughput in the block. For this reason, there is a disadvantage that it is difficult to improve the throughput of the entire apparatus. On the other hand, it is conceivable to increase the main transport mechanism. However, when the number of main transport mechanisms in the block is increased, there is a disadvantage in that the footprint increases with an increase in the number of chemical treatment units and heating units accordingly.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus capable of improving the throughput without increasing the installation area of the substrate processing apparatus.

In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus that performs processing on a substrate, and includes a processing block. The processing block includes a plurality of stacked cells, and each cell is provided on a substrate. A processing unit that performs processing, a single main transport mechanism that transports a substrate to the processing unit, a blow-out unit that supplies clean gas to the transport space of the main transport mechanism, and an exhaust that discharges gas from the transport space A substrate processing apparatus, wherein the discharge unit and the blowout unit are provided so as to overlap the transfer space and separate the transfer space for each cell.

  [Operation / Effect] According to the invention described in claim 1, the processing block has a plurality of stacked cells, and each cell has a processing unit for processing a substrate, and a substrate in the processing unit. Since a single main transfer mechanism for transferring is provided, it is possible to avoid an increase in the installation area of the substrate processing apparatus while increasing the processing capability of the substrate processing apparatus.

  In addition, each cell has a blow-out unit that supplies clean gas to the transfer space of the main transfer mechanism and a discharge unit that discharges gas from the transfer space, so that the atmosphere of the transfer space is kept clean. Can do. Furthermore, since the discharge unit and the blowout unit are provided (stacked) so as to overlap the transport space and the transport space is separated for each cell, the apparatus configuration can be simplified.

  In the present invention, the discharge unit and the blowout unit that separate the transfer space supply clean gas to the discharge unit that discharges gas from the upper level transfer space and the lower level transfer space, respectively. A blowing unit is preferred.

  In this invention, it is preferable that the said discharge unit and the said blowing unit which isolate | separate conveyance space are arrange | positioned between each cell.

  In the present invention, it is preferable that the discharge unit and the blowing unit that separate the conveyance space are provided so as to overlap each other so that the lower surface of the discharge unit and the upper surface of the discharge unit are in contact with each other.

  In the present invention, a gas supply port composed of a large number of small holes is formed on the lower surface of the blowout unit, and a gas discharge port composed of a large number of small holes is formed on the upper surface of the discharge unit. Preferably it is.

  The invention according to claim 6 is a substrate processing apparatus for processing a substrate, comprising a processing block, wherein the processing block has a plurality of stacked cells, and each cell is provided on the substrate. A processing unit that performs processing, and a single main transport mechanism that transports the substrate to the processing unit, and the apparatus supplies a clean gas to the transport space of the main transport mechanism of each cell; A flat box with the same size, with a gas supply port consisting of a number of small holes on one side in a downward orientation, and gas is discharged from the transport space of the main transport mechanism of each cell A discharge unit having a flat box shape having the same area as the transfer space and a gas discharge port formed of a large number of small holes on one side and formed in an upward posture, and gas in each transfer space The supply port It is arranged at a position higher than the gas discharge port of the transfer space, and at least one of the blowing unit or the discharge unit separates the transfer space for each cell, and the processing performed on the substrate in each cell is the same A substrate processing apparatus is characterized.

  [Operation / Effect] According to the invention described in claim 6, the processing block has a plurality of stacked cells, and each cell has a processing unit for processing a substrate, and a substrate for the processing unit. Since a single main transfer mechanism for transferring is provided, it is possible to avoid an increase in the installation area of the substrate processing apparatus while increasing the processing capability of the substrate processing apparatus.

  In addition, the substrate processing apparatus is a flat box shape having the same area as the transfer space for supplying clean gas to the transfer space of the main transfer mechanism of each cell, and a gas supply port consisting of many small holes on one side Is a flat box shape with the same area as the transport space, which discharges gas from the transport space of the main transport mechanism of each cell, and a large number of small holes on one side And a discharge unit in which the configured gas discharge port is formed in an upward posture, so that the atmosphere of the transfer space can be kept clean. Furthermore, since at least one of the blowout unit and the discharge unit separates the conveyance space for each cell, the apparatus configuration can be simplified.

  Moreover, since the gas supply port of each conveyance space is arrange | positioned in the position higher than the gas discharge port of the conveyance space, the air current in a conveyance space becomes what is called a downflow, and can maintain a conveyance space more cleanly.

  In addition, since the processing performed on the substrate in each cell is the same, the apparatus configuration can be simplified.

  In this invention, it is preferable that the said blowing unit and the said discharge unit isolate | separate a conveyance space for every cell.

  In the present invention, the discharge unit and the blowout unit that separate the transfer space supply clean gas to the discharge unit that discharges gas from the transfer space of the upper cell and the transfer space of the lower cell, respectively. A blowing unit is preferred.

  In this invention, it is preferable that the said discharge unit and the said blowing unit which isolate | separate conveyance space are arrange | positioned between each cell.

  According to the substrate processing apparatus of the present invention, it is possible to avoid an increase in the installation area of the substrate processing apparatus while increasing the processing capacity of the substrate processing apparatus. Moreover, the atmosphere of a conveyance space can be kept clean. Furthermore, the apparatus configuration can be simplified.

It is a top view which shows schematic structure of the substrate processing apparatus which concerns on an Example. It is a schematic side view which shows arrangement | positioning of the processing unit which a substrate processing apparatus has. It is a schematic side view which shows arrangement | positioning of the processing unit which a substrate processing apparatus has. It is each vertical sectional view of the aa arrow in FIG. It is each vertical sectional view of the bb arrow in FIG. It is each vertical sectional view of cc arrow in FIG. It is each vertical sectional view of the dd arrow in FIG. (A) is a top view of a coating processing unit, (b) is sectional drawing of a coating processing unit. It is a perspective view of a main conveyance mechanism. It is a control block diagram of the substrate processing apparatus which concerns on an Example. 3 is a flowchart showing a series of processes performed on a substrate W. It is a figure which shows typically the operation | movement which each conveyance mechanism repeats, respectively.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment. FIGS. 2 and 3 are schematic side views showing the arrangement of processing units of the substrate processing apparatus. FIGS. FIG. 3 is a vertical sectional view taken along arrows aa, bb, cc, dd, and dd in FIG. 1.

  The embodiment is a substrate processing apparatus that forms a resist film or the like on a substrate (for example, a semiconductor wafer) W and develops the exposed substrate W. This apparatus is divided into an indexer section (hereinafter referred to as “ID section”) 1, a processing section 3, and an interface section (hereinafter referred to as “IF section”) 5. On both sides of the processing unit 3, an ID unit 1 and an IF unit 5 are provided adjacent to each other. The IF unit 5 is further provided with an exposure device EXP that is an external device separate from the present apparatus.

The ID unit 1 takes out the substrate W from the cassette C that accommodates a plurality of substrates W, and accommodates the substrate W in the cassette C. The ID unit 1 includes a cassette mounting table 9 on which the cassette C is placed and an ID transport mechanism T _ID for transporting the substrate W to each cassette C. The ID transport mechanism T _ID corresponds to the indexer transport mechanism in the present invention.

The processing unit 3 includes four main transport mechanisms T ₁ , T ₂ , T ₃ , and T ₄ . The processing unit 3 is divided into first to fourth cells 11, 12, 13, and 14 for each main transport mechanism T ₁ , T ₂ , T ₃ , and T ₄ . In the first and third cells 11 and 13, a resist film or the like is formed on the substrate W. In the second and fourth cells 12 and 14, the substrate W is developed. Each of these cells 11 to 14 is provided with a plurality of processing units (described later) in which the main transport mechanisms T ₁ , T ₂ , T ₃ and T ₄ bear the transport.

  The first and second cells 11, 12 arranged in the horizontal direction are connected to form one substrate processing row connecting the ID unit 1 and the IF unit 5. In addition, the third and fourth cells 13 and 14 arranged in the horizontal direction are also connected to form one substrate processing row connecting the ID unit 1 and the IF unit 5. These two substrate processing rows are provided substantially in parallel in the vertical direction. In other words, the processing unit 3 is configured by a substrate processing sequence having a hierarchical structure.

  In addition, the substrate processing rows of each layer are stacked in the vertical direction. That is, the first cell 11 is stacked on the third cell 13, and the second cell 12 is stacked on the fourth cell 14. Therefore, when the processing block configured by the first and third cells 11 and 13 and the processing block configured by the second and fourth cells 12 and 14 are arranged in the horizontal direction, the processing unit 3 is configured. I can say that.

The IF unit 5 delivers the substrate W to and from the exposure machine EXP. IF section 5 is provided with an IF's transport mechanisms _{T IF} for transporting the substrate W. The IF transport mechanism T _IF includes a first transport mechanism T _IFA and a second transport mechanism T _IFB . The first transport mechanism T _IFA and the second transport mechanism T _IFB correspond to the interface transport mechanism in this invention.

The ID transport mechanism T _ID transfers the substrate W between the main transport mechanisms T ₁ and T _{3 of} the first and third cells 11 and 13 adjacent to the ID unit 1. In addition, the main transport mechanisms T _{1 to} T ₄ of each cell 11 to 14 deliver and receive the substrate W to and from other cells in the same hierarchy to be connected. Furthermore, IF's transport mechanisms _{T IF} to transfer wafers W between the second main transport mechanism _T 2, _{T 4} of the fourth cell 12, 14 adjacent to the IF section 5. As a result, the substrate W is transported in parallel between the ID unit 1 and the IF unit 5 through the two substrate processing rows, and a series of processing is performed on the substrate W in each substrate processing row. The main transport mechanisms T ₁ and T ₃ correspond to the one-end transport mechanism in the present invention.

The apparatus further includes placement units PASS ₁ and PASS ₃ for transferring the substrate W between the _ID transport mechanism T _ID and the main transport mechanisms T ₁ and T ₃ . Similarly, a placement unit PASS ₂ for delivering the substrate between the main transport mechanisms T ₁ and T ₂ and a placement unit PASS ₄ for delivering the substrate between the main transport mechanisms T ₃ and T ₄ are provided. . In addition, there are provided placement units PASS ₅ and PASS ₆ for delivering the substrate W between the main transport mechanisms T ₂ and T ₄ and the IF transport mechanism T _IF . Each of the placement portions PASS _{1 to} PASS ₆ has a plurality of projecting support pins, and is configured so that the substrate W can be placed in a substantially horizontal posture by these support pins.

[ID part 1]
Hereinafter, the order from the ID part 1 will be described. The cassette mounting table 9 is configured to be able to mount four cassettes C in a row. The ID transport mechanism T _ID includes a movable table 21 that horizontally moves the side of the cassette mounting table 9 in the direction in which the cassettes C are arranged, a lifting shaft 23 that expands and contracts in the vertical direction with respect to the movable table 21, and a lifting shaft 23. And a holding arm 25 that rotates and moves back and forth in the turning radius direction to hold the substrate W, so that the substrate W can be transported between the cassettes C, the placement unit PASS ₁ and the placement unit PASS _3. It is configured.

[First cell 11]
A transport space A ₁ for transporting the substrate W is formed in a strip shape that passes through the center of the first cell 11 and is parallel to the arrangement direction of the cells 11 and 12. The processing units of the first cell 11 are a coating processing unit 31 that applies a processing liquid to the substrate W and a heat treatment unit 41 that performs a heat treatment on the substrate W. Coating units 31 are arranged on one side of the transporting space A _1, and heat-treating units 41 are arranged on the other side.

The coating units 31 are arranged vertically and horizontally, each facing the transporting space A _1. In the present embodiment, a total of four coating processing units 31 are arranged in two rows and two stages. The coating processing unit 31 includes an antireflection film coating processing unit BARC that performs processing for forming an antireflection film on the substrate W, and a resist film coating processing unit RESIST that performs processing for forming a resist film on the substrate W. The coating processing unit 31 corresponds to the liquid processing unit in this invention.

  Please refer to FIG. FIG. 8A is a plan view of the coating processing unit, and FIG. 8B is a cross-sectional view of the coating processing unit. Each coating processing unit 31 includes a rotation holding unit 32 that rotatably holds the substrate W, a cup 33 provided around the substrate W, a supply unit 34 that supplies a processing liquid to the substrate W, and the like. Two sets of rotation holding portions 32 and cups 33 provided in each stage are provided side by side without being partitioned by a partition wall or the like. The supply unit 34 has a plurality of nozzles 35, a gripping unit 36 that grips one nozzle 35, and the gripping unit 36 is moved so that the one nozzle 35 is displaced from the processing position above the substrate W and the top of the substrate W. A nozzle moving mechanism 37 for moving between the standby position and the standby position is provided. One end of a processing liquid pipe 38 is connected to each nozzle 35 in communication. The processing liquid pipe 38 is movably provided to allow movement of the nozzle 35 between the standby position and the processing position. The other end of each processing liquid pipe 38 is connected to a processing liquid supply source (not shown). Specifically, in the case of the antireflection film coating processing unit BARC, the processing liquid supply source supplies different types of antireflection film processing liquids to the nozzles 35. In the case of the resist film coating processing unit RESIST, the processing liquid supply source supplies different types of resist film materials to the nozzles 35.

  The nozzle moving mechanism 37 includes a first guide rail 37a and a second guide rail 37b. The first guide rails 37a are arranged in parallel with each other with the two cups 33 arranged side by side. The second guide rail 37 b is slidably supported by the two first guide rails 37 a and is installed on the two cups 33. The grip portion 36 is slidably supported by the second guide rail 37b. Here, the directions guided by the first guide rail 37a and the second guide rail 37b are both substantially horizontal directions and are substantially orthogonal to each other. The nozzle moving mechanism 37 further includes a drive unit (not shown) that slides and moves the second guide rail 37b and slides the grip portion 36. When the driving unit is driven, the nozzle 35 held by the holding unit 36 is moved to a position above the two rotation holding units 32 corresponding to the processing position.

Heat-treating units 41 are a plurality, are arranged vertically and horizontally, each facing the transporting space A _1. In this embodiment, three heat treatment units 41 can be arranged in the horizontal direction, and five heat treatment units 41 can be stacked in the vertical direction. Each heat treatment unit 41 includes a plate 43 on which the substrate W is placed. The heat treatment unit 41 includes a cooling unit CP for cooling the substrate W, a heating / cooling unit PHP for performing the heat treatment and the cooling treatment continuously, and heat treatment in a vapor atmosphere of hexamethylsilazane (HMDS) in order to improve the adhesion between the substrate W and the film. An adhesion processing unit AHL. The heating / cooling unit PHP has two plates 43 and a local transport mechanism (not shown) that moves the substrate W between the two plates 43. There are a plurality of various heat treatment units CP, PHP, and AHL, which are arranged at appropriate positions.

Please refer to FIG. FIG. 9 is a perspective view of the main transport mechanism. The main transport mechanism T ₁ has a fourth guide rail 52 for guiding the third guide rail 51 and the lateral two guiding in the vertical direction. Third guide rails 51 are fixed opposite each other at one side of the transporting space A _1. In this embodiment, it is arranged on the coating processing unit 31 side. The fourth guide rail 52 is slidably attached to the third guide rail 51. A base portion 53 is slidably provided on the fourth guide rail 52. The base 53 extends transversely, substantially to the center of the transporting space A _1. Further, a drive unit (not shown) that moves the fourth guide rail 52 in the vertical direction and moves the base unit 53 in the horizontal direction is provided. When the drive unit is driven, the base unit 53 is moved to each position of the coating processing unit 31 and the heat treatment unit 41 arranged vertically and horizontally.

The base 53 is provided with a turntable 55 that can rotate about the vertical axis Q. On the turntable 55, two holding arms 57a and 57b for holding the substrate W are provided so as to be movable in the horizontal direction. The two holding arms 57a and 57b are arranged at positions close to each other in the vertical direction. Further, a drive unit (not shown) that rotates the turntable 55 and moves the holding arms 57a and 57b is provided. When the driving unit is driven, the turntable 55 is opposed to the respective coating processing units 31, the respective heat treatment units 41, and the placement units PASS ₁ and PASS _2, and is held with respect to these coating processing units 31 and the like. The arms 57a and 57b are advanced and retracted.

[Third cell 13]
The third cell 13 will be described. In addition, about the same structure as the 1st cell 11, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. The layout of the main transport mechanism T ₃ and the processing unit in the third cell 13 in plan view is substantially the same as that of the first cell 11. For this reason, it can be said that the coating processing unit 31 is stacked in the vertical direction over the first cell 11 and the third cell 13. Similarly, it can be said that the heat treatment unit 41 is also laminated over each layer. Also, is substantially the same as the arrangement of the various treating units of the first cell 11 also arrangement of the various treating units of the third cell 13 as seen from the main transport mechanism T ₃ seen from the main transport mechanism T _1.

In the following, when the resist film coating processing units RESIST and the like provided in the first and third cells 11 and 13 are distinguished from each other, a subscript “1” or “3” is attached (for example, the first The resist film coating processing unit RESIST provided in the cell 11 is referred to as “resist film coating processing unit RESIST ₁ ”).

[First cell 11 and third cell 13]
The configuration related to the first cell 11 and the third cell 13 will be described together. The placement unit PASS ₁ is disposed between the ID unit 1 and the first cell 11. The placement unit PASS ₃ is disposed between the ID unit 1 and the third cell 13. In plan view, the placement portions PASS ₁ and PASS ₃ are disposed on the ID portion 1 side of the transport spaces A ₁ and A ₃ , respectively. In the cross-sectional view, the placement portion PASS ₁ is disposed at a height near the lower portion of the main transport mechanism T ₁ , and the placement portion PASS ₃ is disposed at a height near the upper portion of the main transport mechanism T ₃ . For this reason, the positions of the placement part PASS ₁ and the placement part PASS ₃ are close to each other, and the ID transport mechanism T _ID moves to the placement part PASS ₁ and the placement part PASS ₃ with a small ascending / descending amount. Can do.

There are a plurality (two) of the placement parts PASS ₁ and the placement parts PASS ₃ , which are arranged in two upper and lower stages. Of the two placement parts PASS ₁ , one placement part PASS _1A is for passing the substrate W from the _ID transport mechanism T _ID to the main transport mechanism T ₁ , and the placement part PASS _1A is exclusively ID. The substrate W is placed by the transport mechanism T _ID . The other mounting portion PASS _1B is for passing the substrate W from the main transport mechanism _{T 1} to the ID's transport mechanism _{T ID,} the substrate W is placed solely by the main transport mechanism _{T 1} on the placing portion PASS _1B . _Two mounting parts PASS ₂ , PASS ₄ , PASS ₅ , and PASS ₆ , which will be described later, are also provided in a similar manner, and are used for each delivery direction.

The placement unit PASS ₂ is provided between the first cell 11 and the second cell 12. The placement unit PASS ₄ is provided between the third cell 13 and the fourth cell 14. The placement units PASS ₂ and PASS ₄ are arranged at the same position in plan view. Above and below the placement units PASS ₂ and PASS ₄ , a buffer for temporarily placing the substrate W, a heat treatment unit for performing heat treatment on the substrate W, and the like (both not shown) are appropriately provided.

In the transport spaces A ₁ and A ₃ , a first blowing unit 61 that blows clean gas and a discharge unit 62 that sucks gas are provided. The first blowout unit 61 and exhaust unit 62 is a flat box having substantially the same area as the transporting space A ₁ in plan view. A first outlet 61 a and a discharge outlet 62 a are formed on one surface of the first outlet unit 61 and the discharge unit 62, respectively. In the present embodiment, the first air outlet 61a and the outlet 62a are constituted by a large number of small holes f. The first blow-out unit 61 is arranged in the upper part of the transport spaces A ₁ and A ₃ with the first blow-out opening 61a facing downward. Further, the discharge unit 62 is disposed below the transport spaces A ₁ and A _{3 with} the discharge port 62a facing upward. Atmosphere of the transporting space A ₁ and the transporting space A ₃ are blocked off by the exhaust unit 62 of the transporting space A ₁ and the first blowout unit 61 of the transporting space A _3. The 1st blower outlet 61a is corresponded to the gas supply port in this invention. The discharge port 62a corresponds to the gas discharge port in the present invention. The 1st blowing unit 61 is corresponded to the blowing unit of this invention.

The first blowing units 61 in the transfer spaces A ₁ and A ₃ are connected to the same first gas supply pipe 63 in communication. The first gas supply pipe 63 is provided at a lateral position of the placement parts PASS ₂ and PASS ₄ from the upper part of the transport space A _{1 to} the lower part of the transport space A ₃ and horizontally below the transport space A _2. Is bent. The other end of the first gas supply pipe 63 is connected to a gas supply source (not shown). Similarly, the discharge units 62 of the transfer spaces A ₁ and A ₃ are connected to the same first gas discharge pipe 64. The first gas discharge pipe 64 is provided at a lateral position of the placement parts PASS ₂ and PASS ₄ from the lower part of the transfer space A _{1 to} the lower part of the transfer space A ₃ , and in the horizontal direction below the transfer space A _2. Is bent. Then, by sucking / discharging gas from the discharge port 62a causes blown gas from the first outlet 61a of the transporting space A _1, A _3, flows from top to bottom in the transport space A _1, A ₃ An air flow is formed, and each of the transfer spaces A ₁ and A ₃ is individually kept clean.

  Each coating processing unit 31 of the first and third cells 11 and 13 is formed with a pit portion PS penetrating in the vertical direction. A second gas supply pipe 65 for supplying clean gas and a second gas discharge pipe 66 for exhausting gas are provided in the vertical hole PS in the vertical direction. Each of the second gas supply pipe 65 and the second gas discharge pipe 66 is branched at a predetermined height position of each coating processing unit 31 and drawn out in a substantially horizontal direction from the pothole portion PS. The plurality of branched second gas supply pipes 65 are connected to a second blowing unit 67 that blows gas downward. The plurality of branched second gas discharge pipes 66 are connected to the bottom of each cup 33, respectively. The other end of the second gas supply pipe 65 is connected in communication with the first gas supply pipe 63 below the third cell 13. The other end of the second gas exhaust pipe 66 is connected in communication with the first gas exhaust pipe 64 below the third cell 13. Then, while the gas is blown out from the second blowing unit 67 and the gas is discharged through the second gas discharge pipe 66, the atmosphere in each cup 33 is always kept clean, and the substrate held in the rotation holding unit 32. W can be processed suitably.

  In addition, piping and electric wiring (both not shown) through which the processing liquid is passed are installed in the hole portion PS. In this way, since the pipes and wirings attached to the coating processing units 31 of the first and third cells 11 and 13 can be accommodated in the hole part PS, the lengths of the pipes and wirings can be shortened. it can.

Further, the main transport mechanisms T ₁ and T ₃ and each processing unit included in the first cell 11 and the third cell 13 are accommodated in a single casing 75. Each structure of the 2nd cell 12 and the 4th cell 14 which are mentioned later is also accommodated in the separate housing | casing 75. FIG. In this manner, the processing unit 3 can be easily manufactured by providing a housing that collectively accommodates the main transport mechanism T and the processing unit for each processing block.

[Second cell 12]
The second cell 12 will be described. About the same structure as the 1st cell 11, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. Transporting space A ₂ of the second cell 12 is formed as an extension of the transporting space A _1.

The processing units of the second cell 12 are a development processing unit DEV that develops the substrate W, a heat treatment unit 42 that performs heat treatment on the substrate W, and an edge exposure unit EEW that exposes the peripheral edge of the substrate W. Developing units DEV are arranged at one side of the transporting space A _2, heat-treating units 42 and edge exposing unit EEW are arranged at the other side of the transporting space A _2. Here, the development processing unit DEV is preferably disposed on the same side as the coating processing unit 31. Further, it is preferable that the heat treatment unit 42 and the edge exposure unit EEW are aligned with the heat treatment unit 41.

Developing units DEV is four, which are arranged two horizontally along the transporting space A ₂ are stacked in upper and lower stages. Each development processing unit DEV includes a rotation holding unit 77 that holds the substrate W in a rotatable manner, and a cup 79 provided around the substrate W. Two development processing units DEV arranged side by side are provided without being partitioned by a partition wall or the like. Further, a supply unit 81 that supplies a developing solution to the two development processing units DEV is provided. The supply unit 81 has two slit nozzles 81a having slits or small hole arrays for discharging the developer. The length in the longitudinal direction of the slit or small hole array is preferably equivalent to the diameter of the substrate W. The two slit nozzles 81a are preferably configured to discharge different types or concentrations of developing solutions. The supply unit 81 further includes a moving mechanism 81b that moves each slit nozzle 81a. Thereby, each slit nozzle 81a is movable above the two rotation holding portions 77 arranged in the horizontal direction.

Heat-treating units 42 are a plurality, more aligned with are horizontally along the transporting space A _2, are stacked in a vertical direction. The heat treatment unit 42 includes a heating unit HP that heats the substrate W and a cooling unit CP that cools the substrate W.

  The edge exposure unit EEW is single and is provided at a predetermined position. The edge exposure unit EEW includes a rotation holding unit (not shown) that rotatably holds the substrate W, and a light irradiation unit (not shown) that exposes the periphery of the substrate W held by the rotation holding unit. .

A placement unit PASS ₅ and a heating / cooling unit PHP are stacked in one stroke facing the conveyance space A ₂ and adjacent to the IF unit 5. One side of the mounting portion PASS ₅ and the heating / cooling unit PHP is adjacent to the heat treatment unit 42 and is arranged in line with the heat treatment unit 42. The heating / cooling unit PHP is distinguished from the heat treatment unit 42 of the second cell 12 in that the _IF transport mechanism _TIF bears transport, but is the same as the second and fourth cells 12 and 14 in terms of layout. Housed in a housing 75. The heating / cooling unit PHP and the placement unit PASS ₅ are configured to be able to carry in and out the substrate W from the front side facing the transfer space A ₂ and the side surface facing the IF unit 5.

The main transport mechanism T ₂ is disposed substantially at the center of the transporting space A ₂ in plan view. The main transport mechanism T ₂ has the same structure as the main transport mechanism T _1. The main transport mechanism T ₂ transports the substrate W between the placement unit PASS ₂ , the various heat treatment units 42, the edge exposure unit EEW, and the placement unit PASS ₅ .

[Fourth reason block 14]
About the same structure as the 1st, 2nd cells 11 and 12, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. The layout of the main transport mechanism T ₄ and the processing unit in the fourth cell 14 in plan view is substantially the same as that of the second cell 12. Also, is substantially the same as the arrangement of the various treating units of the second cell 12 as seen also arrangement of the various treating units of the fourth cell 14 as seen from the main transport mechanism T ₄ from the main transport mechanism T _2. Therefore, the development processing units DEV of the second cell 12 and the fourth cell 14 are stacked one above the other. Similarly, the heat treatment units 42 and the like of the second cell 12 and the fourth cell 14 are stacked one above the other.

[Second cell 12 and fourth cell 14]
The configuration related to the second cell 12 and the fourth cell 14 is also substantially the same as the configuration related to the first and third cells 11 and 13 and will be described briefly. The transport spaces A ₂ and A ₄ of the second and fourth cells 12 and 14 are also provided with configurations corresponding to the first blow-out unit 61 and the discharge unit 62, respectively. Further, the development processing units DEV of the second and fourth cells 12 and 14 are provided with configurations corresponding to the second blowing unit 67, the second gas exhaust pipe 66, and the like, respectively.

In the following, when distinguishing the development processing units DEV, edge exposure units EEW, and the like provided in the second and fourth cells 12 and 14, subscripts “2” or “4” are respectively attached (for example, The heating unit HP provided in the second cell 12 is described as “heating unit HP ₂ ”).

[IF unit 5 etc.]
The first transport mechanism T _IFA and the second transport mechanism T _IFB are provided side by side in a direction orthogonal to the direction in which the cells 11 and 12 (13, 14) are aligned. The first transport mechanism _TIFA is disposed on the side where the heat treatment units 42 of the second and fourth cells 12 and 14 are located. The second transport mechanism T _IFB is disposed on the side where the development processing units DEV of the second and fourth cells 12 and 14 are located. Between these first and second transport mechanisms T _IFA and T _IFB , a placement unit PASS-CP for placing and cooling the substrate W, a placement unit PASS ₇ for placing the substrate W, and the substrate W Buffers BF that are temporarily accommodated are stacked in multiple stages.

The first transport mechanism _TIFA includes a base 83 that is fixedly provided, a lifting shaft 85 that expands and contracts vertically upward with respect to the base 83, and is capable of turning with respect to the lifting shaft 85 and in a turning radius direction. And a holding arm 87 that holds the substrate W back and forth. Then, the substrate W is transported between the heating / cooling unit (PHP ₂ , PHP ₄ ), the placement unit (PASS ₅ , PASS ₆ , PASS-CP) and the buffer BF. The second transport mechanism T _IFB also includes a base 83, a lifting shaft 85, and a holding arm 87. Then, transports the substrate W between the mounting portion (PASS-CP, PASS ₇₎ and exposing machine EXP.

  Next, the control system of this apparatus will be described. FIG. 10 is a control block diagram of the substrate processing apparatus according to the embodiment. As shown, the apparatus includes a main controller 91 and first to sixth controllers 93, 94, 95, 96, 97, and 98.

The first controller 93 controls substrate transport by the _ID transport mechanism T _ID . The second controller 94 transports the substrate by the main transport mechanism T ₁ , resist film coating unit RESIST ₁ , antireflection film coating unit BARC ₁ , cooling unit CP ₁ , heating / cooling unit PHP _1, and adhesion processing unit AHL _1. Control the substrate processing at. The third controller 95 controls substrate transport by the main transport mechanism _{T 2,} and substrate treatment in the edge exposing unit EEW _2, developing units DEV _2, heating units HP ₂ and cooling units CP _2. The control of the fourth and fifth controllers 96 and 97 corresponds to the control of the second and third controllers 94 and 95, respectively. The sixth controller 98 controls substrate conveyance by the first and second conveyance mechanisms T _IFA and T _IFB and substrate processing in the heating and cooling units PHP ₂ and PHP ₄ . The above-described controls by the first to sixth controllers 93 to 98 are performed independently of each other.

The main controller 91 comprehensively controls the first to sixth controllers 93 to 98. Specifically, the main controller 91 controls the cooperation of the transport mechanisms. For example, the timing at which each transport mechanism accesses the placement units PASS _{1 to} PASS ₆ is adjusted. Further, the main controller 91 performs control so that the substrate W is transported to the exposure machine EXP in the same order as the order of unloading from the cassette C.

  Each of the main controller 91 and the first to sixth controllers 93 to 98 is a central processing unit (CPU) that executes various processes, a RAM (Random-Access Memory) that is a work area for arithmetic processing, It is realized by a storage medium such as a fixed disk for storing various information such as a processing recipe (processing program). The main controller 91 and the first to sixth controllers 93 to 98 correspond to the control means in this invention.

  Next, the operation of the substrate processing apparatus according to the embodiment will be described. FIG. 11 is a flowchart for performing a series of processes on the substrate W, and shows a processing unit or a placement unit on which the substrates W are sequentially transferred. FIG. 12 is a diagram schematically showing the operations that each transport mechanism repeatedly performs, and clearly shows the order of processing units, placement units, cassettes, and the like accessed by the transport mechanism. Below, it demonstrates for every conveyance mechanism.

[ID transport mechanism T _ID ]
The ID transport mechanism T _ID moves to a position facing the one cassette C, holds one unprocessed substrate W accommodated in the cassette C in the holding arm 25 and carries it out of the cassette C. The ID transport mechanism T _ID turns the holding arm 25 and moves the lifting shaft 23 up and down to move to a position facing the mounting portion PASS ₁ to place the held substrate W on the mounting portion PASS _1A ( This corresponds to step S1a in Fig. 8. Hereinafter, only the step numbers are appended. At this time, the substrate W is normally placed on the placement unit PASS _1B , and the substrate W is received and stored in the cassette C (step S23). When there is no substrate W in the placement unit PASS _1B , the cassette C is accessed as it is. And the board | substrate W accommodated in the cassette C is conveyed to mounting part PASS _3A (step S1b). Also here, if the substrate W is placed on the placement part PASS _3B , the substrate W is stored in the cassette C (step S23).

The ID transport mechanism T _ID repeatedly performs the above-described operation. This operation is controlled by the first controller 93. Accordingly, the substrates W carried out one by one from the cassette C are alternately transferred to the first cell 11 and the third cell 13.

[Main transport mechanisms T ₁ , T ₃ ]
Since the operation of the main transport mechanism T ₃ is substantially the same as operation of the main transport mechanism T _1, a description will be given only the main transport mechanism T _1. The main transport mechanism T ₁ moves to a position facing the placement unit PASS ₁ . At this time, the main transport mechanism _{T 1} holds the substrate W received from the portion PASS _2B placing just before the one holding arm 57 (e.g., 57 b). Substrate on which the main transport mechanism _{T 1} is placed on (step S22), and mounting the other holding arm 57 (e.g. 57a) portion PASS _1A with placing the portion PASS _1B mounting the wafer W held Hold W.

The main transport mechanism _{T 1} accesses a predetermined one of the cooling units CP _1. The cooling unit CP ₁ already has predetermined heat treatment (cooling) other substrate W has ended. With unloaded from the main transport mechanism T ₁ cooling unit CP ₁ holds the other substrate W in an empty (not holding the substrate W) holding arm 57, cooling the wafer W received from the mounting portion PASS _1A It carried into the unit CP _1. Then, the main transport mechanism T ₁ moves holding the cooled wafer W into the film coating units BARC _1. The cooling unit CP ₁ starts heat treatment (cooling) to the loaded wafer W (step S2). Incidentally, thereafter, the main transport mechanism T ₁ is to access the thermal processing unit 41 and the coating units 31 of various, the processing units (31, 41) and those already there is a substrate W having been subjected to the predetermined processing .

When the antireflection film coating unit BARC ₁ is accessed, the main transport mechanism T ₁ unloads the substrate W on which the antireflection film is formed from the antireflection film coating unit BARC ₁ and reflects the cooled substrate W. It is placed on the rotation holding unit 32 of the coating treatment unit BARC ₁ for the prevention film. Thereafter, the main transport mechanism T ₁ holds the substrate W on which the antireflection film is formed and moves to the heating / cooling unit PHP ₁ . The antireflection film coating processing unit BARC ₁ starts processing the substrate W placed on the rotation holding unit 32 (step S3).

  Specifically, the rotation holding unit 32 rotates the substrate W in a horizontal posture, holds one nozzle 35 by the holding unit 36, and moves the held nozzle 35 above the substrate W by driving the nozzle moving mechanism 37. Then, the processing liquid for the antireflection film is supplied from the nozzle 35 to the substrate W. The supplied processing liquid spreads over the entire surface of the substrate W and is discarded from the substrate W. The cup 33 collects the discarded processing liquid. In this way, the process of coating and forming the antireflection film on the substrate W is performed.

The main transport mechanism T ₁ accesses the the heating and cooling unit PHP _1, with unloading the wafer W having the heat treatment from the heating and cooling unit PHP _1, turning on the wafer W having antireflection film formed thereon into the heating and cooling unit PHP ₁ . Then, the main transport mechanism _{T 1} holds and moves the wafer W taken out of the heating and cooling unit PHP ₁ to the cooling unit CP _1. In the heating / cooling unit PHP ₁ , the substrates W are sequentially placed on the two plates 43, and after heating the substrate W on one plate 43, the substrate W is cooled on the other plate 43 (step S 4).

The main transport mechanism T ₁ moved to the cooling unit CP _1, with a wafer W out of the cooling unit CP _1, and loads the wafer W held in the cooling unit CP _1. The cooling unit CP ₁ cools the loaded wafer W (step S5).

Subsequently, the main transport mechanism T ₁ moves to the resist film coating unit RESIST ₁ . The main transport mechanism T 1 takes a wafer W having resist film formed from the resist film coating units RESIST _1, the substrate W held in the resist film coating units RESIST ₁ carries the substrate W. The resist film coating processing unit RESIST ₁ supplies the resist film material while rotating the loaded substrate W to form a resist film on the substrate W (step S6).

The main transport mechanism T ₁ further moves to the heating / cooling unit PHP ₁ and the cooling unit CP ₁ . Then, the wafer W having resist film formed thereon is carried into the heating and cooling unit PHP _1, transfers a wafer W to the cooling unit CP ₁ having undergone the processing in the heating and cooling unit portion PHP _1, the processing in the cooling unit CP ₁ The finished substrate W is received. The heating / cooling unit PHP ₁ and the cooling unit CP ₁ each perform a predetermined process on the unprocessed substrate W. (Steps S7 and S8).

The main transport mechanism T ₁ moves to the placement unit PASS ₂ to place the held substrate W on the placement unit PASS _2A (step S9), and the substrate W placed on the placement unit PASS _2B. Is received (step S21).

Thereafter, the main transport mechanism T ₁ accesses the placement unit PASS ₁ again and repeats the above-described operation. This operation is controlled by the second controller 94. As a result, when the substrate W placed on the placement unit PASS ₁ is received, the main transport mechanism T ₁ transports the substrate W to a predetermined processing unit (cooling unit CP ₁ in this embodiment) and this processing unit. Then, the processed substrate W is taken out. Subsequently, the substrate W is sequentially moved to a plurality of processing units, and the processed substrate W of each processing unit is transferred to another processing unit. Each processing unit (31, 41) starts a predetermined process each time a processed substrate W is replaced with an unprocessed substrate W. Therefore, the processing is performed on the plurality of substrates W in parallel by different processing units. However, the second controller 94 controls the schedule for transferring and processing the substrate W to the plurality of processing units (31, 41) to be uniform. Thus, since the series of processes will exit from the substrate W placed on the receiver PASS ₁ earlier in order, mounting portion substrate W in the order they are placed on the placing portion PASS ₁ is PASS ₂ To be paid out. Similarly, the main transport mechanism T ₁ places the substrate W on the placement unit PASS ₁ in the order received from the placement unit PASS ₂ .

[Main transport mechanisms T ₂ , T ₄ ]
Since the operation of the main transport mechanism T ₄ is substantially the same as the operation of the main transport mechanism T _2, a description will be given only the main transport mechanism T _2. The main transport mechanism _{T 2} moves to a position opposed to the receiver PASS _2. At this time, the main transport mechanism T ₂ holds a wafer W received from a cooling unit CP ₂ accessed immediately before. The main transport mechanism _{T 2} places the part PASS _2B mounting the wafer W held (step S21), and holds the substrate W placed on the placing portion PASS _2A (step S9).

The main transport mechanism _{T 2} accesses into the edge exposing unit EEW _2. Then, the substrate W that has been subjected to the predetermined processing in the edge exposure unit EEW ₂ is received, and the cooled substrate W is carried into the edge exposure unit EEW ₂ . The edge exposure unit EEW ₂ irradiates the peripheral edge of the substrate W from a light irradiation unit (not shown) while rotating the loaded substrate W. Thereby, the periphery of the substrate W is exposed (step S10).

The main transport mechanism T ₂ holds the substrate W received from the edge exposure unit EEW ₂ and accesses the placement unit PASS ₅ . Then, the substrate W held is placed on the placement unit PASS _5A (step S11), and the substrate W placed on the placement unit PASS _5B is held (step S16).

The main transport mechanism T ₂ moves to one of the cooling units CP _2, the wafer W held by replacing the substrate W in the cooling unit CP _2. The main transport mechanism T ₂ accesses the developing units DEV ₂ holds the wafer W having received cooling treatment. Cooling unit CP ₂ starts treatment of the newly loaded wafer W (step S17).

The main transport mechanism T ₂ takes a wafer W that has been developed from the developing unit DEV _2, and places the cooled wafer W on the spin holder 77 of the developing unit DEV _2. The development processing unit DEV ₂ develops the substrate W placed on the rotation holding unit 77 (step S18). Specifically, while the rotation holding unit 77 rotates the substrate W in a horizontal posture, the developing solution is supplied to the substrate W from any of the slit nozzles 81a to develop the substrate W.

The main transport mechanism T ₂ accesses one of the heating units HP ₂ holding the wafer W is developed. Then, the substrate W is unloaded from the heating unit HP ₂ and the substrate W to be held is put into the heating unit HP ₂ . Subsequently, the main transport mechanism T ₂ transports the substrate W unloaded from the heating unit HP ₂ to the cooling unit CP ₂ and takes out the substrate W that has already been processed in the cooling unit CP ₁ . Each of the heating unit HP ₂ and the cooling unit CP ₂ performs a predetermined process on the unprocessed substrate W (steps S19 and S20).

Thereafter, the main transport mechanism T ₂ accesses the placement unit PASS ₂ again and repeats the above-described operation. This operation is controlled by the third controller 95. Thereby, the substrate W is delivered to the placement unit PASS _5A in the order of placement on the placement unit PASS _2A . Similarly, the substrates W are discharged to the placement unit PASS _2B in the order in which the substrates W are placed on the placement unit PASS _5B .

[IF transport mechanism T _IF to first transport mechanism T _IFA ]
First transport mechanism _{T IFA} accesses the receiver PASS _5, and receives the substrate W placed on the placing part PASS _5A (step S11a). The first transport mechanism _TIFA holds the received substrate W, moves to the placement unit PASS-CP, and carries it into the placement unit PASS-CP (step S12).

Next, it receives the substrate W from the first transport mechanism _{T IFA} placing part PASS ₇ (step S14), and moves to a position opposed to the heating and cooling units PHP _2. The first transport mechanism _{T IFA} already heat treatment from the heating and cooling unit _{PHP 2 (PEB: Post Exposure Bake} ) takes out a wafer W having undergone, carries the wafer W received from the placing part PASS ₇ of the heating and cooling units PHP ₂ To do. The heating / cooling unit PHP ₂ heat-treats the unprocessed substrate W (step S15).

The first transport mechanism _TIFA transports the substrate W taken out from the heating / cooling unit PHP ₂ to the placement unit PASS _5B . Subsequently, the first transport mechanism _TIFA transports the substrate W placed on the placement unit PASS _6A to the placement unit PASS-CP (steps S11b and S12). Next, the first transport mechanism _TIFA is transported from the placement unit PASS ₇ to the heating / cooling unit PHP ₄ . At this time, the substrate W that has already been processed in the heating / cooling unit PHP ₄ is taken out and placed on the placement unit PASS _4B .

Thereafter, the first transport mechanism _TIFA accesses the placement unit PASS ₅ again and repeats the above-described operation. This operation is controlled by the sixth controller 98. In this manner, by alternately transferring from the placement units PASS ₅ and PASS ₆ to the placement unit PASS-CP, the substrates W are placed in the order in which the _ID transport mechanism T _ID is taken out from the cassette C. Place on CP.

However, the transport to the processing unit by the main transport mechanism T and the processing control of each processing unit are independent for each of the cells 11 to 14. That is, the timing of paying out to the placement unit PASS ₅ and the placement unit PASS ₆ is not adjusted. For this reason, due to obstacles such as substrate processing or conveyance delay, the order of payout to both the placement unit PASS ₅ and the placement unit PASS ₆ may not match the order of removal from the cassette C. In such a case, based on the control by the sixth controller 98, the first transport mechanism _TIFA is operated as follows.

When the substrate W is not paid out to either the placement part PASS _5A or the placement part PASS _6A , when the substrate W is placed on the other placement part, it is placed on the placement part. The transport destination of the substrate W is changed to the buffer BF instead of the placement unit PASS-CP. Then, when the substrate W starts to be placed again on the one placement unit that has been paid out, the substrate W is alternately placed on the placement unit PASS-CP from the restored one placement unit and the buffer BF. Transport. Thereby, even if the order of the timing of delivery to the placement part PASS ₅ and the placement part PASS ₆ is different from the order taken out from the cassette C, the order of the substrates W carried into the placement part PASS-CP Corresponds to the order of removal from the cassette C.

[IF transport mechanism T _IF to second transport mechanism T _IFB ]
The second transport mechanism T _IFB takes out the substrate W from the placement unit PASS-CP and transports it to the exposure apparatus EXP. Then, when the exposed substrate W delivered from the exposure machine EXP is received, it is transported to the placement unit PASS ₇ .

Thereafter, the second transport mechanism _TIFB accesses the placement unit PASS-CP again and repeats the above-described operation. This operation is also controlled by the sixth controller 98. Thus, since the first and second transport mechanisms T _IFA and T _IFB operate in cooperation, the substrates W are sent to the exposure apparatus EXP in the order of removal from the cassette C.

  As described above, according to the substrate processing apparatus according to the embodiment, each of the processing capabilities of the processing for forming the antireflection film and the resist film and the development processing is provided by providing the two substrate processing rows arranged vertically. Can be substantially doubled. Therefore, the throughput of the substrate processing apparatus can be greatly improved.

In addition, since the main transfer mechanisms T ₁ , T ₂ , T ₃ , and T ₄ are arranged in one row for each of the upper layer and the lower layer, an increase in the installation area of the substrate processing apparatus can be suppressed.

Since the arrangement of the main transport mechanisms T ₁ , T ₃ (T ₂ , T ₄ ) and the processing units in the upper and lower two substrate processing rows is substantially the same in plan view, the configuration of the apparatus can be simplified.

  In addition, the configuration of the apparatus can be simplified by making the processing units constituting the upper and lower two substrate processing rows the same type and making the series of processing performed in the upper and lower two substrate processing rows the same.

  Further, since the processing units of the upper and lower cells 11 and 13 (12, 14) are in a stacked relationship with each other, the structure of the processing block composed of the upper and lower cells can be simplified.

  In addition, each processing block is provided with a casing 75 that collectively supports the upper and lower two main transport mechanisms T in the processing block and a plurality of processing units, so that the substrate processing apparatus can be efficiently manufactured and repaired easily. Can be done.

In addition, each transporting space A ₁ to A _4, since the discharge port 62a and the first blowout openings 61a are provided respectively, can be kept of each transporting space A clean.

  Further, since the first air outlet 61a is disposed at the upper part of the transport space A and the discharge port 62a is disposed at the lower part of the transport space A, a substantially vertical downward airflow is formed in the transport space A. Thereby, it is possible to prevent the temperature environment of the transport space A, the coating processing unit 31 or the development processing unit DEV from being affected by the heat from each heat treatment unit 41.

Further, the discharge unit 62 provided in the transfer space A ₁ (A ₂ ) and the first blow-out unit 61 provided in the transfer space A ₃ (A ₄ ) are provided in each of the transfer spaces A ₁ , A ₃ (A ₂ , A ₄ ). Since the atmosphere is shut off, each conveyance space A can be kept clean. In addition, since it is not necessary to provide a member that blocks the atmosphere exclusively, the apparatus configuration can be simplified.

By providing the first gas supply pipe 61 common to the first blow-out units 61 provided in the upper and lower transfer spaces A ₁ and A ₃ , the pipe installation space can be reduced and the apparatus configuration can be simplified. .

Further, it is provided with the part PASS _1, PASS ₃ for transferring wafers W between the transport mechanism _{T ID} and the main transport mechanism _T 1, _{T 3} for ID, transport mechanism _{T ID} and main transport ID transport efficiency mechanisms _T 1, _{T 3} can be prevented from decreasing. Similarly, the transfer of the substrate W between the transport mechanisms is also performed via the placement unit PASS, so that the transport efficiency of the transport mechanisms can be prevented from deteriorating.

In addition, since the positions of the placement part PASS ₁ and the placement part PASS ₃ are close to each other, the ID transport mechanism T _ID can access the placement part PASS ₁ and the placement part PASS ₃ with a smaller lifting amount. Can do.

  In addition, since the main controller 91 and the first to sixth controllers 93 to 98 are provided, the order in which the substrates W are taken out from the cassette C and the order in which they are loaded into the exposure machine EXP is controlled. Accordingly, each substrate W can be managed and tracked without being provided with a configuration for identifying the substrate W.

  By providing a common second gas supply pipe 65 for each coating processing unit 31 (each development processing unit DEV) provided in each of the upper and lower cells 11, 13 (12, 14), the piping installation space is reduced. The apparatus configuration can be simplified.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the embodiment described above, two substrate processing rows are configured, but the present invention is not limited to this. It may be modified so that three or more substrate processing rows are formed and provided in multiple stages.

  (2) In the above-described embodiment, each substrate processing column is configured by connecting two cells 11 and 12 (13 and 14), but is not limited thereto. Three or more cells may be connected to form a substrate processing row.

  (3) In the above-described embodiment, the substrate processing row performs a process of forming a resist film and an antireflection film on the substrate W and a process of developing the exposed substrate W. However, the present invention is not limited to this. . Other processing such as cleaning processing may be performed on the substrate W in the substrate processing row. As a result, the type and number of each processing unit are appropriately selected and designed. Further, the substrate processing apparatus may be configured by omitting the IF unit 5.

  (4) In the above-described embodiment, the series of processes performed in the two substrate processing rows are the same, but the present invention is not limited to this. You may change so that a different process may be performed in each board | substrate process sequence.

  (5) In the above-described embodiments, the planar layouts of the two substrate processing rows are substantially the same, but the present invention is not limited to this. You may change so that arrangement | positioning of the main conveyance mechanism T and a processing unit may differ for every board | substrate process row | line | column (namely, between upper and lower cells).

  (6) In the above-described embodiment, the arrangement of the processing units as viewed from the main transport mechanism T is the same between the upper and lower cells 11 and 13 (12, 14), but the upper and lower cells are not limited to this. You may change so that it may differ between.

  (7) In each of the above-described embodiments, the processing units are arranged on both sides of the transport space A in each of the cells 11 to 14, but the processing units may be arranged only on one side.

  (8) In the above-described embodiment, the transfer mechanism is configured to perform delivery via the placement unit PASS. However, the present invention is not limited to this. For example, you may change so that it may deliver directly.

(9) In the above-described embodiment, the buffer BF, the cooling unit CP, and the like may be arranged on the upper side and the lower side of the placement units PASS ₁ , PASS ₂ , PASS ₃ , and PASS ₄ . Thereby, the substrate W can be temporarily placed or cooled appropriately.

In (10) In the foregoing embodiment, transport mechanism _T IFA of 2 groups of IF's transport mechanisms _{T IF,} was constructed in _{T IFB,} without being limited thereto, constitute one group, or 3 groups or more transfer mechanisms It may be changed as follows.

  (11) In the above-described embodiment, there is no partition between the antireflection film coating unit BARC and the resist film coating unit RESIST, and the atmosphere communicates between the units. Not limited. You may comprise so that the atmosphere of both units may be interrupted | blocked suitably.

(12) In the above-described embodiment, one first blow-out unit 61 and one discharge unit 62 are configured to block the atmosphere of each of the transport spaces A ₁ , A ₃ (A ₂ , A ₄ ). Not limited. For example, only one of the first blowing unit 61 and the discharge unit 62 may be configured to block the atmosphere. Or you may comprise so that the discharge | emission unit 62 and the 1st blowing unit 61 may be equipped with the shielding board which interrupts | blocks the atmosphere of each conveyance space A which has a vertical relationship.

(13) In the above-described embodiment, the first blowing unit 61 is arranged at the upper part of each conveyance space A and the discharge unit 62 is arranged at the lower part. However, the present invention is not limited to this. You may comprise so that the 1st blowing unit 61 or the discharge unit 62 may be arrange | positioned in the side part of the conveyance space A. FIG. Further, the first blow-out unit 61 and the discharge unit 62 may be shared in the transfer spaces A ₁ and A ₂ (A ₃ and A ₄ ) in the same substrate processing row.

1 ... Indexer part (ID part)
3 ... Processing unit 5 ... Interface unit (IF unit)
DESCRIPTION OF SYMBOLS 11 ... 1st cell 12 ... 2nd cell 13 ... 3rd cell 14 ... 4th cell 31 ... Application | coating process unit 41 ... Heat processing unit 61 ... 1st blowing unit 61a ... 1st blower outlet 62 ... 2nd discharge | emission unit 62a ... Exhaust Outlet 65 ... Second gas supply pipe 66 ... Second gas discharge pipe 91 ... Main controllers 93 to 98 ... First to sixth controllers BARC ... Antireflection film coating processing unit RESIST ... Resist film coating processing unit DEV ... Development processing Unit EEW ... Edge exposure unit T _ID ... ID transport mechanism T ₁ , T ₂ , T ₃ , T ₄ ... Main transport mechanism T _IF ... IF transport mechanism PASS, PASS-CP ... Placement section BF ... Buffer A ₁ , A ₂ , A ₃ , A ₄ ... Conveying space EXP ... Exposure machine C ... Cassette W ... Substrate

Claims (9)

A substrate processing apparatus for processing a substrate,
With processing blocks,
The processing block has a plurality of stacked cells,
Each cell is
A processing unit for processing the substrate;
A single main transport mechanism for transporting the substrate to the processing unit;
A blow-out unit for supplying clean gas to the transfer space of the main transfer mechanism;
A discharge unit for discharging gas from the transfer space;
With
The said discharge unit and the said blowing unit are the substrate processing apparatuses which overlap and are provided in a conveyance space, and isolate | separate a conveyance space for every cell. The substrate processing apparatus according to claim 1,
The discharge unit and the blow-out unit that separate the transfer space are a discharge unit that discharges gas from the upper-level transfer space and a blow-out unit that supplies clean gas to the lower-level transfer space, respectively. Substrate processing equipment. In the substrate processing apparatus of Claim 1 or Claim 2,
The substrate processing apparatus, wherein the discharge unit and the blowout unit that separate the transfer space are arranged between the cells. In the substrate processing apparatus in any one of Claims 1-3,
The substrate processing apparatus, wherein the discharge unit and the blowout unit that separate the conveyance space are provided so as to be in contact with each other so that a lower surface of the discharge unit and an upper surface of the blowout unit are in contact with each other. In the substrate processing apparatus in any one of Claim 1 or Claim 4,
On the lower surface of the blowing unit, a gas supply port composed of a large number of small holes is formed,
A substrate processing apparatus, wherein a gas discharge port composed of a large number of small holes is formed on an upper surface of the discharge unit. A substrate processing apparatus for processing a substrate,
With processing blocks,
The processing block has a plurality of stacked cells,
Each cell is
A processing unit for processing the substrate;
A single main transport mechanism for transporting the substrate to the processing unit;
With
The device is
A flat box with the same size as the transfer space that supplies clean gas to the transfer space of the main transfer mechanism of each cell, and a gas supply port consisting of many small holes is formed on one side with a downward attitude. A blowout unit,
A flat box with the same size as the transfer space that discharges gas from the transfer space of the main transfer mechanism of each cell, and a gas discharge port composed of many small holes on one side is formed in an upward posture. A discharge unit,
With
The gas supply port of each transfer space is arranged at a position higher than the gas discharge port of the transfer space,
At least one of the blowout unit or the discharge unit separates a conveyance space for each cell,
A substrate processing apparatus characterized in that processing performed on a substrate in each cell is the same. The substrate processing apparatus according to claim 6,
The substrate processing apparatus in which the blow-out unit and the discharge unit separate a conveyance space for each cell. The substrate processing apparatus according to claim 7,
The discharge unit and the blowout unit that separate the transfer space are a discharge unit that discharges gas from the transfer space of the upper cell, and a blowout unit that supplies clean gas to the transfer space of the lower cell, respectively. Substrate processing equipment. In the substrate processing apparatus of Claim 7 or Claim 8,
The substrate processing apparatus, wherein the discharge unit and the blowout unit that separate the transfer space are arranged between the cells.

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