JP5344734B2 - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of preferably carrying out a series of processes on substrates even in an abnormal state where a process unit is incapable of transporting likewise a normal state. <P>SOLUTION: The substrate treating apparatus comprises a plurality of kind-classified process sections (31, 45, 46, 47), a main transporting mechanism transporting substrates in predetermined order to the kind-classified process sections, and a control section controlling the main transporting mechanism. The kind-classified process sections each have an arbitrary number of process units (HP<SB>1</SB>, CPa<SB>1</SB>, SC<SB>1</SB>, CPb<SB>1</SB>). The control section allows the substrates to be transported one by one between respective kind-classified process sections which are successive in order at predetermined transporting cycle time intervals in the normal state. If at least one process unit is in an abnormal state of disabled transporting, scheduled serial transporting of predetermined substrates which are transported through the abnormal process unit in the normal state is interrupted and scheduled transporting of substrates which are transported not via the abnormal process unit in the normal state is carried as scheduled. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a substrate processing apparatus for performing a series of processes on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”).

Conventionally, as this type of apparatus, there is a substrate processing apparatus that forms a resist film on a substrate and develops the substrate exposed by a separate exposure machine. This apparatus includes a coating processing block for forming a coating film such as a resist film and a development processing block for developing a substrate. Each processing block includes a single main transport mechanism and various processing units. The processing unit of the coating processing block includes a resist film coating processing unit that applies a resist film material to a substrate, a heat treatment unit that performs heat treatment on the substrate, and the like. The processing unit of the development processing block includes a development processing unit that supplies a developer to the substrate, a heat treatment unit, and the like. The main transport mechanism of each block sequentially transports the substrate to various processing units provided in the block to perform a series of processes, and delivers the substrate to the main transport mechanism of another adjacent processing block (for example, a patent) Reference 1).
JP 2003-324139 A

However, the conventional example having such a configuration has the following problems.
That is, in the conventional apparatus, even if one processing unit fails, if the same type of processing unit is normal, a series of processing can be performed on the substrate in the processing block. That is, the substrate that is normally processed in the failed processing unit is changed to be transferred to another normal processing unit. However, in this case, since the substrate is carried into the processing block at the same pace as the normal time, if the substrate is transported at a pace exceeding the processing capacity of other normal processing units, a time for waiting the substrate occurs, There is an inconvenience that a period for performing a series of processes on the substrate becomes long. As a result, there is a disadvantage that the processing quality for the substrate is lowered.

  The present invention has been made in view of such circumstances, and even in an abnormal state in which a processing unit cannot be transported, a substrate process capable of suitably performing a series of processes on a substrate as in the normal state. An object is to provide an apparatus.

In order to achieve such an object, the present invention has the following configuration.
That is, according to the present invention, in a substrate processing apparatus that performs a plurality of types of processing on a substrate, a plurality of type-specific processing units provided for each type of processing to be performed on the substrate, and the substrates are conveyed in a predetermined order to each type-specific processing unit. A main transport mechanism, and a control unit that controls the main transport mechanism, and each of the plurality of type-specific processing units is a single unit corresponding to the type-specific processing unit. In the normal state in which the control unit can be transferred to all the processing units of each type of processing unit, the control unit has the transfer order at a predetermined transfer cycle time interval. A substrate is transferred to the first first type processing unit, and the substrates are transferred one by one between the different type processing units in order, and at least one processing unit of the type processing unit is In an abnormal state where transport is not possible The processing capacity of the processing unit in this abnormal state is reduced compared to the normal state, and the number of times of transporting the substrate to the first type processing unit is thinned out from the normal state. Only the substrates that can be transported between the processing units according to the type that are adjacent to each other are transported .

[Operation / Effect] According to the present invention , in the case of an abnormal state, the control unit moves to the first type processing unit from the normal state by an amount corresponding to a decrease in the processing capability of the processing unit compared to the normal state. By thinning out the number of times the substrate is conveyed, a series of processing in the processing unit is started at a pace commensurate with the processing capability of the processing unit in the abnormal state. Thereby, even in an abnormal state, the period during which a series of processing is performed on each substrate can be made the same as in the normal state. Therefore, the processing quality of the substrate in the abnormal state can be maintained as in the normal state.

Further, the present invention is a process comprising a plurality of type-specific processing units provided for each type of processing performed on a substrate, and a main transport mechanism that transports the substrates to each type-specific processing unit in a predetermined order. A control unit that controls the main transport mechanism, and each of the plurality of type-specific processing units includes an arbitrary number of processing units that perform a single type of processing corresponding to the type-specific processing unit. The control unit transports the substrate to the first type-specific processing unit whose transport order is the first in a predetermined transport cycle time interval in a normal state in which the control unit can transport all processing units of each type. In the abnormal state in which at least one of the processing units of each type cannot be transported, the substrate is transported one by one between the processing units by type that are in the same order. Normal state during multiple timings The substrate is transported to the first type processing unit at a frequency according to the ratio of the processing capability of the processing unit in an abnormal state to the processing capability of the processing unit, and the order is different for each transport cycle time. Only a substrate that can be transported between the processing units according to the type that moves back and forth is transported.

[Operation / Effect] According to the present invention , in the case of an abnormal state, the control unit determines the processing capability of the processing unit in the abnormal state relative to the processing capability of the processing unit in the normal state during a plurality of timings for each transport cycle time. By causing the substrate to be transferred to the first type processing unit at a frequency according to the ratio, a series of processing in the processing unit can be started at a pace commensurate with the processing capability of the processing unit in an abnormal state. it can. Thereby, even in an abnormal state, the period during which a series of processing is performed on each substrate can be made the same as in the normal state. Therefore, the processing quality of the substrate in the abnormal state can be maintained as in the normal state.

In the present invention, the number of processing units of each type of processing unit is the number of units, the time required for the processing unit of each type of processing unit to process one substrate is the unit processing time, and the unit processing time of each type of processing unit As the processing time by type of the processing unit by type, the transport cycle time being the longest time among the processing times by type of each processing unit by type. Is preferred. If the substrate is transported at such a transport cycle time interval, the substrate can be processed at a pace commensurate with the processing capability of the entire processing unit.

  Here, “the time required for the processing unit of each type of processing unit to process one substrate”, that is, “unit processing time” is the preparation time that occurs before and after the process processing in the processing time of each processing unit. The waiting time is a time appropriately added according to practical use, such as a time for the main transport mechanism to keep the substrate in each processing unit.

In the present invention, the processing capacity of the processing unit in the normal state is a value obtained by dividing a unit time by the transport cycle time, and a value obtained by dividing each unit processing time by the transport cycle time is rounded up to an integer and rounded up. A value obtained by multiplying the value by the transfer cycle time is set as a real unit processing time, and a value obtained by dividing the real unit processing time of each type processing unit by the number of units that can be transferred by the type processing unit It is preferable that the processing capacity of the processing unit in the abnormal state is a value obtained by dividing the unit time by the longest time among the processing times by the actual type of the processing units by type . In an abnormal state in which the number of units decreases, there is a case where the operation is not substantially performed in the type-specific processing time of the type-specific processing unit in relation to the transfer cycle time. Even in such a case, the processing capability of the processing unit in the abnormal state can be accurately obtained by using the processing time according to the substantial type obtained from the number of units that can be transported. Therefore, the substrate can be processed at a suitable pace even in an abnormal state.

In the present invention, the control unit has no substrate that can be transported in all of the processing units classified by type that are in the order of each other at each timing of the transport cycle time, and the substrate is transferred to the first processing unit classified by type. When it is not the timing for transporting, it is preferable to stop the operation of the main transport mechanism at that timing . Unnecessary operations of the main transport mechanism can be omitted.

In this invention, it is provided with the indexer part which conveys a board | substrate with respect to the said process part by delivering a board | substrate between the said main conveyance mechanisms, The said control part controls the said indexer part, From the said indexer part It is preferable that the transfer of the substrate to the processing unit is performed in accordance with the pace of the transfer of the substrate to the first type processing unit . By transferring the substrate from the indexer unit to the main transport mechanism at a pace corresponding to the processing capability of the processing unit, it is possible to prevent the substrate from accumulating between the indexer unit and the processing unit.

In the present invention, it is preferable that a plurality of the processing units are provided in the vertical direction, and the control unit performs control according to the normal state or the abnormal state for each processing unit . Whether each processing unit is in a normal state or an abnormal state, the period for performing a series of processing on the substrate is the same. Therefore, even if the processing is performed on the substrates in parallel in each processing unit, it is possible to pay out the substrates that have been processed in the same order as the processing was started.

In the present invention, the processing unit includes a heat treatment unit that performs heat treatment on the substrate and a resist film material application processing unit that applies a resist film material to the substrate, and forms a resist film on the substrate. It is preferable. In a series of processes, a resist film can be formed on the substrate.

In the present invention, it is preferable that the processing unit includes a thermal processing unit that performs thermal processing on the substrate and a development processing unit that supplies a developing solution to the substrate as the type-specific processing unit . In a series of processes, the substrate can be developed.

  According to the substrate processing apparatus of the present invention, the control means performs processing in the abnormal state by causing the control unit to perform only the transfer of the substrate scheduled to be transferred without going through the abnormality processing unit in the normal state as scheduled. All the substrates can be transported in the same manner as in the normal state. Thereby, even in an abnormal state, the period during which a series of processing is performed on each substrate can be made the same as in the normal state. Therefore, the processing quality of the substrate in the abnormal state can be maintained as in the normal state.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment. FIGS. 2 and 3 are schematic side views showing the arrangement of processing units of the substrate processing apparatus. FIGS. FIG. 3 is a vertical sectional view taken along arrows aa, bb, cc, dd, and dd in FIG. 1.

  The embodiment is a substrate processing apparatus 10 that forms a resist film on a substrate (for example, a semiconductor wafer) W and develops the exposed substrate W. Hereinafter, the substrate processing apparatus 10 is abbreviated as the apparatus 10 as appropriate. The apparatus 10 includes an indexer section (hereinafter referred to as “ID section”) 1, two processing blocks Ba and Bb, and an interface section (hereinafter referred to as “IF section”) 5. The ID unit 1, processing block Ba, processing block Bb, and IF unit 5 are provided adjacent to each other in this order. The IF unit 5 is further provided with an exposure unit EXP that is an external device separate from the apparatus 10.

The ID unit 1 transports the substrate W to the processing block Ba. The processing blocks Ba and Bb are each divided into a plurality (two) of hierarchies K in the vertical direction. Processing the main transport mechanism T ₁ to the upper story K1 block Ba is provided, the main transport mechanism T ₃ is provided on the story K3 lower. Similarly, processing a main carrier mechanism T ₂ is provided in the upper story K2 block Bb, it is the main transport mechanism T ₄ is provided on the lower story K4. Then, in each of the levels K1 and K3 of the processing block Ba, processing for forming a resist film or the like on the substrate W is performed. In each of the layers K2 and K4 of the processing block Bb, processing for developing the substrate W is performed. Moreover, the same hierarchy K1-K2 and K3-K4 of each processing block Ba and Bb are each comprised so that the delivery of the board | substrate W is possible. The IF unit 5 transports the substrate W to and from an exposure machine EXP separate from the present apparatus. The exposure machine EXP exposes the substrate W. Below, the structure of each part of a present Example is demonstrated in detail.

[ID part 1]
The ID unit 1 takes out the substrate W from the cassette C that accommodates a plurality of substrates W, and accommodates the substrate W in the cassette C. The ID unit 1 includes a cassette mounting table 9 on which the cassette C is mounted. The cassette mounting table 9 is configured to be able to mount four cassettes C in a row. The ID unit 1 includes an ID transport mechanism T _ID . The ID transport mechanism T _ID transports the substrate W to each cassette C and transports the substrate W to a placement unit PASS ₁ and a placement unit PASS ₃ to be described later. The ID transport mechanism T _ID includes a movable table 21 that horizontally moves the side of the cassette mounting table 9 in the direction in which the cassettes C are arranged, a lifting shaft 23 that expands and contracts in the vertical direction with respect to the movable table 21, and the lifting shaft 23. And a holding arm 25 that holds the substrate W by moving back and forth in the turning radius direction.

[Processing block Ba]
Between the layers K1 and K3 of the ID unit 1 and the processing block Ba, mounting units PASS ₁ and PASS ₃ for mounting the substrate W are provided. A substrate W transferred between the _ID transport mechanism T _ID and the main transport mechanism T ₁ is temporarily placed on the platform PASS ₁ . Similarly, the substrate W transferred between the _ID transport mechanism T _ID and the main transport mechanism T ₃ is temporarily placed on the placement unit PASS ₃ . In cross-sectional view, the placement portion PASS ₁ is disposed at a height position near the lower portion of the upper layer K1, and the placement portion PASS ₃ is disposed at a height near the upper portion of the lower layer K3. As described above, since the positions of the placement unit PASS ₁ and the placement unit PASS ₃ are relatively close, the ID transport mechanism T _ID moves between the placement unit PASS ₁ and the placement unit PASS ₃ with a small ascending / descending amount. be able to.

Between the processing blocks Ba and Bb, placement units PASS ₂ and PASS ₄ for placing the substrate W are also provided. The placement unit PASS ₂ is disposed between the layers K1 and K2, and the placement unit PASS ₄ is disposed between the layers K3 and K4. The main transport mechanism T _I and the main transport mechanism T ₂ deliver the substrate W via the placement unit PASS ₂ , and the main transport mechanism T ₃ and the main transport mechanism T ₄ transfer the substrate W via the placement unit PASS _4. Deliver.

Each mounting part PASS ₁ is plural (two units) and is arranged close to each other in the vertical direction. Of the two placement units PASS _1, the substrate W passing from the _ID transport mechanism T _ID to the main transport mechanism T ₁ is placed on one placement unit PASS _1A , and the other placement unit PASS _1B is placed on the other placement unit PASS _1B . substrate W to pass from the main transport mechanism _{T 1} to the ID's transport mechanism _{T ID} is placed. There are a plurality (two) of the placement units PASS _{2 to} PASS ₄ and later-described placement units PASS ₅ and PASS ₆ , and one of the placement units PASS is selected according to the direction in which the substrate W is delivered. In addition, sensors (not shown) for detecting the presence or absence of the substrate W are attached to the placement units PASS _1A and PASS _1B , respectively, and based on the detection signal of each sensor, the ID transport mechanism T _ID and the main transport mechanism. to control the transfer of a substrate W by T _1. Similar sensors are also attached to the placement units PASS _{2 to} PASS ₆ .

The hierarchy K1 will be described. The main transport mechanism T _1, is provided movably transporting space A ₁ substantially central parallel and street conveying direction of the story K1 in plan view. The hierarchy K1 is provided with a plurality of type-specific processing units 31, 45, 46, and 47 that are provided for each type of processing performed on the substrate W. Specifically, a coating processing unit 31 that applies a resist film material to the substrate W, a heating processing unit 45 that performs a heating process on the substrate W, and cooling processing units 46 and 47 that perform a cooling process on the substrate W, respectively. Then, the main transport mechanism T _1, heat treatment section 45, cooling section 46, the coating processing unit 31 sequentially transports each substrate W in order of the cooling unit 47. As described above, both the cooling processing units 46 and 47 perform the cooling processing, but since the order in which the substrates W are transported is different, they are particularly distinguished in this specification. Coating part 31 is disposed on one side of the transporting space A _1, the other-side heating section 45, cooling section 46 and 47 are arranged. The hierarchy K1 corresponds to the processing unit in the present invention. The application processing unit 31, the heat processing unit 45, and the cooling processing units 46 and 47 correspond to the type-specific processing units in the present invention. In particular, the coating processing unit 31 corresponds to the resist film material coating processing unit in the present invention, and the heating processing unit 45 and the cooling processing units 46 and 47 correspond to the thermal processing unit in the present invention, respectively.

The coating processing unit 31 includes a resist film coating processing unit RESIST that coats a plurality of (for example, three) resist film materials. Each resist film coating units RESIST are arranged vertically and horizontally, respectively facing the transporting space A _1.

  Please refer to FIG. FIG. 8A is a plan view of the resist film coating processing unit RESIST, and FIG. 8B is a cross-sectional view of the resist film coating processing unit RESIST. The resist film coating processing unit RESIST includes a rotation holding unit 32 that rotatably holds the substrate W, a cup 33 provided around the substrate W, a supply unit 34 that supplies a processing liquid to the substrate W, and the like. .

  The supply unit 34 has a plurality of nozzles 35, a gripping unit 36 that grips one nozzle 35, and moves the gripping unit 36 so that the one nozzle 35 is displaced from the processing position above the substrate W and the top of the substrate W. And a nozzle moving mechanism 37 for moving between the standby positions. One end of a processing liquid pipe 38 is connected to each nozzle 35 in communication. The processing liquid pipe 38 is provided movably (flexibly) so as to allow movement of the nozzle 35 between the standby position and the processing position. The other end of each processing liquid pipe 38 is connected to a processing liquid supply source (not shown). Specifically, the processing liquid supply source supplies different types of resist film materials to each nozzle 35.

  The nozzle moving mechanism 37 includes a first guide rail 37a and a second guide rail 37b. The first guide rails 37a are arranged in parallel with each other with the two cups 33 arranged side by side. The second guide rail 37 b is slidably supported by the two first guide rails 37 a and is installed on the two cups 33. The grip portion 36 is slidably supported by the second guide rail 37b. Here, the directions guided by the first guide rail 37a and the second guide rail 37b are both substantially horizontal directions and are substantially orthogonal to each other. The nozzle moving mechanism 37 further includes a drive unit (not shown) that slides and moves the second guide rail 37b and slides the grip portion 36. When the driving unit is driven, the nozzle 35 held by the holding unit 36 is moved to a position above the two rotation holding units 32 corresponding to the processing position.

Heating unit 45 has respective cooling section 46 and 47 any of the processing units, they are arranged vertically and horizontally, each facing the transporting space A _1. In the present embodiment, the heat processing unit 45 has four heating units HP for heating the substrate W, the cooling processing unit 46 has two cooling units CPa for cooling the substrate W, and the cooling processing unit 47 has the substrate W. 2 cooling units CPb are provided. Each heating unit HP and cooling units CPa and CPb are each provided with a plate 43 on which the substrate W is placed.

The main transport mechanism T ₁ will be described in detail. Please refer to FIG. FIG. 9 is a perspective view of the main transport mechanism. The main transport mechanism T ₁ has a fourth guide rail 52 for guiding the third guide rail 51 and the lateral two guiding in the vertical direction. Third guide rails 51 are fixed opposite each other at one side of the transporting space A _1. In this embodiment, it is arranged on the application processing unit 31 side. The fourth guide rail 52 is slidably attached to the third guide rail 51. A base portion 53 is slidably provided on the fourth guide rail 52. The base 53 extends transversely, substantially to the center of the transporting space A _1. Further, a drive unit (not shown) that moves the fourth guide rail 52 in the vertical direction and moves the base unit 53 in the horizontal direction is provided. When the driving unit is driven, the base unit 53 is moved to positions of the resist film coating processing units RESIST, the heating unit HP, and the cooling units CPa and CPb arranged in the vertical and horizontal directions.

The base 53 is provided with a turntable 55 that can rotate about the vertical axis Q. On the turntable 55, two holding arms 57a and 57b for holding the substrate W are provided so as to be movable in the horizontal direction. The two holding arms 57a and 57b are arranged at positions close to each other in the vertical direction. Further, a drive unit (not shown) that rotates the turntable 55 and moves the holding arms 57a and 57b is provided. When this driving unit is driven, the rotary table 55 is opposed to the resist film coating unit RESIST, the heating unit HP, the cooling units CPa and CPb, and the mounting units PASS ₁ and PASS ₂ , and these processing units The holding arms 57a and 57b are moved forward and backward with respect to the like.

The hierarchy K3 will be described. In addition, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol about the same structure as the hierarchy K1. The main transport mechanism T ₃ and each type-specific processing sections of the hierarchy K3 (processing unit) layout in plan view (arrangement) is substantially the same as those hierarchies K1. Therefore, the arrangement of the processing unit hierarchy K3 as seen from the main transport mechanism T ₃ is substantially the same as the arrangement of the processing unit hierarchy K1 as seen from the main transport mechanism T _1. The hierarchy K3 also corresponds to the processing unit in the present invention.

In the following, when distinguishing processing units such as resist film coating processing units RESIST provided in the layers K1 and K3, subscripts “1” or “3” are respectively attached (for example, provided in the layer K1). The resist film coating processing unit RESIST is referred to as “resist film coating processing unit RESIST ₁ ”).

Other configurations of the processing block Ba will be described. In the transport spaces A ₁ and A ₃ , a first blowing unit 61 that blows clean gas and a discharge unit 62 that sucks gas are provided. The first blowout unit 61 and exhaust unit 62 is a flat box having substantially the same area as the transporting space A ₁ in plan view. A first outlet 61 a and a discharge outlet 62 a are formed on one surface of the first outlet unit 61 and the discharge unit 62, respectively. In the present embodiment, the first air outlet 61a and the outlet 62a are constituted by a large number of small holes f. The first blow-out unit 61 is arranged in the upper part of the transport spaces A ₁ and A ₃ with the first blow-out opening 61a facing downward. Further, the discharge unit 62 is disposed below the transport spaces A ₁ and A _{3 with} the discharge port 62a facing upward. Atmosphere of the transporting space A ₁ and the transporting space A ₃ are blocked off by the exhaust unit 62 of the transporting space A ₁ and the first blowout unit 61 of the transporting space A _3. Therefore, the atmospheres of the layers K1 and K3 are blocked from each other.

The first blowing units 61 in the transfer spaces A ₁ and A ₃ are connected to the same first gas supply pipe 63 in communication. The first gas supply pipe 63 is provided at a lateral position of the placement parts PASS ₂ and PASS ₄ from the upper part of the transport space A _{1 to} the lower part of the transport space A ₃ and horizontally below the transport space A _2. Is bent. The other end of the first gas supply pipe 63 is connected to a gas supply source (not shown). Similarly, the discharge units 62 of the transfer spaces A ₁ and A ₃ are connected to the same first gas discharge pipe 64. The first gas discharge pipe 64 is provided at a lateral position of the placement parts PASS ₂ and PASS ₄ from the lower part of the transfer space A _{1 to} the lower part of the transfer space A ₃ , and in the horizontal direction below the transfer space A _2. Is bent. Then, by sucking / discharging gas from the discharge port 62a causes blown gas from the first outlet 61a of the transporting space A _1, A _3, flows from top to bottom in the transport space A _1, A ₃ An air flow is formed, and each of the transfer spaces A ₁ and A ₃ is individually kept clean.

  In each of the resist film coating processing units RESIST of the layers K1 and K3, a pit portion PS penetrating in the vertical direction is formed. A second gas supply pipe 65 for supplying clean gas and a second gas discharge pipe 66 for exhausting gas are provided in the vertical hole PS in the vertical direction. Each of the second gas supply pipe 65 and the second gas discharge pipe 66 is branched at a predetermined height position of each resist film coating processing unit RESIST, and is drawn out from the pothole portion PS in a substantially horizontal direction. The plurality of branched second gas supply pipes 65 are connected to a second blowing unit 67 that blows gas downward. The plurality of branched second gas discharge pipes 66 are connected to the bottom of each cup 33, respectively. The other end of the second gas supply pipe 65 is connected in communication with the first gas supply pipe 63 below the level K3. The other end of the second gas exhaust pipe 66 is connected to the first gas exhaust pipe 64 below the level K3. Then, while the gas is blown out from the second blowing unit 67 and the gas is discharged through the second gas discharge pipe 66, the atmosphere in each cup 33 is always kept clean, and the substrate held in the rotation holding unit 32. W can be processed suitably.

  In addition, piping and electric wiring (both not shown) through which the processing liquid is passed are installed in the hole portion PS. Thus, since the piping, wiring, etc. attached to the coating processing part 31 of the hierarchy K1, K3 can be accommodated in the pothole part PS, the length of piping, wiring, etc. can be shortened.

  Further, the processing block Ba is accommodated in one housing 75. A processing block Bb to be described later is also housed in a separate housing 75. As described above, the apparatus 10 can be easily manufactured by providing the housing 75 that collectively accommodates the main transport mechanism T and the processing unit for each of the processing blocks Ba and Bb.

[Processing block Bb]
The hierarchy K2 will be described. About the same structure as the hierarchy K1, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. Transporting space A ₂ in the hierarchy K2 is formed as an extension of the transporting space A _1.

In the level K2, a development processing unit DEV that supplies a developing solution to the substrate W, various heat treatment units 42 that heat-treat the substrate W, and an edge exposure unit EEW that exposes the peripheral edge of the substrate W are provided. Developing units DEV are arranged at one side of the transporting space A _2, heat-treating units 42 and edge exposing unit EEW are arranged at the other side of the transporting space A _2. Here, the development processing unit DEV is preferably disposed on the same side as the coating processing unit 31. Further, it is preferable that the heat treatment unit 42 and the edge exposure unit EEW are aligned with the heat treatment unit 41. In this specification, processing performed in the development processing unit DEV is appropriately described as development processing, and processing performed in the edge exposure unit EEW is appropriately described as edge exposure.

Developing units DEV is four, which are arranged two horizontally along the transporting space A ₂ are stacked in upper and lower stages. Each development processing unit DEV includes a rotation holding unit 77 that holds the substrate W in a rotatable manner, and a cup 79 provided around the substrate W. Two development processing units DEV arranged side by side are provided without being partitioned by a partition wall or the like. Further, a supply unit 81 that supplies a developing solution to the two development processing units DEV is provided. The supply unit 81 has two slit nozzles 81a having slits or small hole arrays for discharging the developer. The length in the longitudinal direction of the slit or small hole array is preferably equivalent to the diameter of the substrate W. The two slit nozzles 81a are preferably configured to discharge different types or concentrations of developing solutions. The supply unit 81 further includes a moving mechanism 81b that moves each slit nozzle 81a. Thereby, each slit nozzle 81a is movable above the two rotation holding portions 77 arranged in the horizontal direction.

Heat-treating units 42 are multiple, multiple lined with is horizontally along the transporting space A _2, are stacked in a vertical direction. The heat treatment unit 42 includes a heating unit HP that heats the substrate W, a cooling unit CP that cools the substrate W, and a heating / cooling unit PHP that continuously performs the heat treatment and the cooling process. The heating / cooling unit PHP includes two plates 43 and a local transport mechanism (not shown) that moves the substrate W between the two plates 43.

There are a plurality of heating / cooling units PHP. Each heating / cooling unit PHP is stacked in the vertical direction in the row closest to the IF unit 5, and one side portion of the heating / cooling unit PHP faces the IF unit 5 side. About the heating-cooling unit PHP provided in the hierarchy K2, the conveyance opening of the board | substrate W is formed in the side part. For the heating / cooling unit PHP, an IF transport mechanism _{TIF, which} will be described later, transports the substrate W through the transport port. In the heating / cooling unit PHP arranged in the layer K2, post-exposure heating (PEB) processing is performed. Therefore, the heating / cooling process performed by the heating / cooling unit PHP provided in the layer K2 is particularly referred to as a PEB process. Similarly, the heating / cooling process performed by the heating / cooling unit PHP in the layer K4 is particularly described as a PEB process.

  The edge exposure unit EEW is single and is provided at a predetermined position. The edge exposure unit EEW includes a rotation holding unit (not shown) that rotatably holds the substrate W, and a light irradiation unit (not shown) that exposes the periphery of the substrate W held by the rotation holding unit. .

Further, a placement portion PASS ₅ is stacked on the upper side of the heating / cooling unit PHP. The main transport mechanism T ₂ and an IF transport mechanism T _{IF, which} will be described later, deliver the substrate W via the placement unit PASS ₅ .

The main transport mechanism T ₂ is disposed substantially at the center of the transporting space A ₂ in plan view. The main transport mechanism T ₂ has the same structure as the main transport mechanism T _1. The main transport mechanism T ₂ transports the substrate W between the placement unit PASS ₂ , the various heat treatment units 42, the edge exposure unit EEW, and the placement unit PASS ₅ .

The hierarchy K4 will be briefly described. The relationship between the hierarchies K2 and K4 is the same as the relationship between the hierarchies K1 and K3. The transport spaces A ₂ and A ₄ on the floors K 2 and K ₄ are also provided with configurations corresponding to the first blow-out unit 61 and the discharge unit 62, respectively. In addition, the development processing units DEV in the levels K2 and K4 are provided with configurations corresponding to the second blowing unit 67, the second gas discharge pipe 66, and the like.

In the following, when distinguishing the development processing units DEV, edge exposure units EEW, and the like provided in the hierarchies K2 and K4, subscripts “2” and “4” are respectively attached (for example, provided in the hierarchy K2). The heating unit HP is described as “heating unit HP ₂ ”).

[IF unit 5]
The IF unit 5 delivers the substrate W between the layers K2 and K4 of the processing block Bb and the exposure apparatus EXP. IF section 5 is provided with an IF's transport mechanisms _{T IF} for transporting the substrate W. The IF transport mechanism _TIF includes a first transport mechanism _TIFA and a second transport mechanism _TIFB that can transfer the substrate W to each other. The first transport mechanism _TIFA transports the substrate W to the layers K2 and K4. As described above, in the present embodiment, the first transport mechanism _TIFA transports the substrate W to the placement units PASS ₅ and PASS ₆ of the layers K3 and K4 and the heating and cooling unit PHP of the layers K3 and K4. . The second transport mechanism T _IFB transports the substrate W to the exposure machine EXP.

The first transport mechanism T _IFA and the second transport mechanism T _IFB are provided side by side in a lateral direction substantially orthogonal to the transport direction of the processing block Ba and the processing block Bb. The first transport mechanism _TIFA is disposed on the side where the heat treatment units 42 and the like of the layers K2 and K4 are located. The second transport mechanism T _IFB is arranged on the side where the development processing units DEV of the levels K2 and K4 are located. Further, between the first and second transport mechanisms T _IFA , T _IFB , a placement unit PASS-CP for placing and cooling the substrate W, a placement unit PASS ₇ for placing the substrate W, and the substrate W Is provided in the buffer unit BF. The buffer BF can place or accommodate a plurality of substrates W. The first and second transport mechanisms T _IFA and T _IFB deliver the substrate W via the placement unit PASS-CP and the placement unit PASS ₇ . Only the first transport mechanism _TIFA accesses the buffer BF.

The first transport mechanism _TIFA includes a base 83 that is fixedly provided, a lifting shaft 85 that expands and contracts vertically upward with respect to the base 83, and is capable of turning with respect to the lifting shaft 85 and in a turning radius direction. And a holding arm 87 that holds the substrate W back and forth. The second transport mechanism T _IFB also includes a base 83, a lifting shaft 85, and a holding arm 87.

  Next, the control system of the apparatus 10 will be described. FIG. 10 is a control block diagram of the substrate processing apparatus according to the embodiment. As illustrated, the control unit 90 of the apparatus 10 includes a main controller 91 and first to seventh controllers 93, 94, 95, 96, 97, 98, and 99.

The main controller 91 comprehensively controls the first to seventh controllers 93 to 99. The first controller 93 controls substrate transport by the _ID transport mechanism T _ID . The second controller 94 controls substrate transport by the main transport mechanism T ₁ and substrate processing in the resist film coating processing unit RESIST ₁ , the heating unit HP ₁ , the cooling unit CPa _1, and the cooling unit CPb ₁ . The third controller 95 controls substrate transport by the main transport mechanism _{T 2,} and substrate treatment in the edge exposing unit EEW _2, developing units DEV _2, heating units HP ₂ and cooling units CP _2. The control of the fourth and fifth controllers 96 and 97 corresponds to the control of the second and third controllers 94 and 95, respectively. The sixth controller 98 controls substrate transport by the first transport mechanism _TIFA and substrate processing in the heating / cooling units PHP ₂ and PHP ₄ . The seventh controller 99 controls substrate transport by the second transport mechanism _TIFB . The first to seventh controllers 93 to 99 described above perform control independently of each other.

  The main controller 91 and the first to seventh controllers 93 to 99 each have a central processing unit (CPU) for executing various processes, a RAM (Random-Access Memory) serving as a work area for the arithmetic processes, and a storage medium such as a fixed disk. Etc. are realized. In the storage medium, processing recipes (processing programs) set in advance, processing times (unit processing times) of various processing units provided in the processing blocks Ba and Bb, the number (number of units) according to these Various types of information such as information on the transfer process of each substrate W are stored.

  Next, the operation of the substrate processing apparatus according to the embodiment will be described. First, a basic operation of the apparatus 10 will be described with reference to FIGS. 11 and 12, and then an operation example including a specific control example of the substrate W in a normal state and an abnormal state will be described. FIG. 11 is a flowchart for performing a series of processes on the substrate W, and shows a processing unit or a placement unit on which the substrates W are sequentially transferred. FIG. 12 is a diagram schematically showing the operations that each transport mechanism repeatedly performs, and clearly shows the order of processing units, placement units, cassettes, and the like accessed by the transport mechanism.

[ID transport mechanism T _ID ]
The ID transport mechanism T _ID moves to a position facing the one cassette C, holds one unprocessed substrate W accommodated in the cassette C in the holding arm 25 and carries it out of the cassette C. The ID transport mechanism T _ID turns the holding arm 25 and moves the lifting shaft 23 up and down to move to a position facing the mounting portion PASS ₁ to place the held substrate W on the mounting portion PASS _1A ( This corresponds to step S1a in Fig. 12. Hereinafter, only the step symbols will be added.) At this time, the substrate W is usually placed on the placement unit PASS _1B , and the substrate W is received and stored in the cassette C (step S20). Note that step S20 is omitted when there is no substrate W in the placement unit PASS _1B . Subsequently, the ID transport mechanism T _ID accesses the cassette C, and transports the substrate W accommodated in the cassette C to the placement unit PASS _3A (step S1b). Also here, if the substrate W is placed on the placement part PASS _3B , the substrate W is stored in the cassette C (step S20). The ID transport mechanism T _ID repeatedly performs the above-described operation.

The operation of the _ID transport mechanism T _ID is controlled by the first controller 93. Thus, the substrate W of the cassette C is sent to the level K1, and the substrate W discharged from the level K1 is accommodated in the cassette C. Similarly, the substrate W of the cassette C is sent to the level K3, and the substrate W discharged from the level K3 is accommodated in the cassette C.

[Main transport mechanisms T ₁ , T ₃ ]
Since the operation of the main transport mechanism T ₃ is substantially the same as operation of the main transport mechanism T _1, a description will be given only the main transport mechanism T _1. The main transport mechanism T ₁ moves to a position facing the placement unit PASS ₁ . At this time, the main transport mechanism _{T 1} holds the substrate W received from the portion PASS _2B placing just before the one holding arm 57 (e.g., 57 b). Substrate on which the main transport mechanism _{T 1} is placed on (step S19), placing the other holding arm 57 (e.g. 57a) portion PASS _1A with placing the portion PASS _1B mounting the wafer W held Hold W.

The main transport mechanism _{T 1} accesses the heating unit HP _1. The heating unit HP ₁ includes another substrate W that has already been subjected to the heat treatment. The main transport mechanism T ₁ out of the heating unit HP ₁ holds the other substrate W in an empty (not holding the substrate W) holding arm 57, heating the substrate W received from the mounting portion PASS _1A Carry in unit HP ₁ . Then, the main transport mechanism T ₁ moves to the cooling unit CPa ₁ holding a substrate W which is heat treated. The heating unit HP ₁ starts a heating process on the substrate W that has been loaded (step S2a). This heat treatment is already completed when the main transport mechanism T ₁ into the heating unit HP ₁ next access. In the following description, also in various other processing units, when the main transport mechanism T ₁ is accessed, it is assumed that the substrate W having been subjected to the predetermined processing each already.

When accessing the cooling unit CPa _1, the main transport mechanism _{T 1} while unloading the cooled processed substrate W from the cooling unit CPa _1, it carries the substrate W after the heat treatment into the cooling unit CPa _1. Thereafter, the main transport mechanism T ₁ holds the cooled substrate W and moves to the resist film coating processing unit RESIST ₁ . The cooling unit CPa ₁ starts a cooling process for the substrate W (step S3a).

The main transport mechanism T ₁ moves to the resist film coating unit RESIST _1, with a wafer W out of the resist film formed from the resist film coating unit RESIST _1, the substrate W held by the resist film is loaded into use coating units RESIST _1. The resist film application processing unit RESIST ₁ applies the resist film material while rotating the substrate W carried in (step S4a).

The main transport mechanism _{T 1} further moves to the cooling unit CPb _1. Then, the substrate W having resist film formed thereon is transferred into the cooling unit CPb _1, receives a wafer W treated in the cooling unit CPb _1. The cooling unit CPb ₁ performs a predetermined process on the unprocessed substrate W (step S5a).

The main transport mechanism _{T 1} moves to the mounting portion PASS _2, held placed on the portion PASS _2A mounting the substrate W is (step S6a), are placed on the placing portion PASS _2B substrate W Is received (step S18a).

Thereafter, the main transport mechanism T ₁ accesses the placement unit PASS ₁ again and repeats the above-described operation. This operation is controlled by the second controller 94. As a result, all the substrates W transferred from the cassette C to the placement unit PASS ₁ are transferred between the various processing units in the layer K1 along the transfer path described above, and predetermined processing is sequentially performed in each transferred processing unit. .

The main transport mechanism T ₁ transports the substrate W transported to the placement unit PASS ₁ to a predetermined processing unit (heating unit HP ₁ in the present embodiment) and also transfers the processed substrate W from the processing unit. Take out. Subsequently, the taken out substrate W is transferred to the next processing unit (cooling unit CPa _{1 in} this embodiment), and the processed substrate W is taken out from this processing unit. In this manner, the substrates W that have been processed in the respective processing units are moved to new processing units, so that the processing is performed in parallel on the plurality of substrates W. Then, the substrate W placed on the placement unit PASS ₁ is placed on the placement unit PASS ₂ in order from the substrate W, and is paid to the level K2. Similarly, the substrates W placed on the placement unit PASS ₂ are placed on the placement unit PASS ₁ in order from the substrate W and discharged to the ID unit 1.

[Main transport mechanisms T ₂ , T ₄ ]
Since the operation of the main transport mechanism T ₄ is substantially the same as the operation of the main transport mechanism T _2, a description will be given only the main transport mechanism T _2. The main transport mechanism _{T 2} moves to a position opposed to the receiver PASS _2. At this time, the main transport mechanism T ₂ holds a wafer W received from a cooling unit CP ₂ accessed immediately before. The main transport mechanism _{T 2} places the part PASS _2B mounting the wafer W held (step S18a), for holding a substrate W placed on the placing portion PASS _2A (step S6a).

The main transport mechanism _{T 2} accesses into the edge exposing unit EEW _2. Then, the substrate W that has been subjected to the predetermined processing in the edge exposure unit EEW ₂ is received, and the cooled substrate W is carried into the edge exposure unit EEW ₂ . The edge exposure unit EEW ₂ irradiates the peripheral edge of the substrate W from a light irradiation unit (not shown) while rotating the loaded substrate W. Thereby, the periphery of the substrate W is exposed (step S7a).

The main transport mechanism T ₂ holds the substrate W received from the edge exposure unit EEW ₂ and accesses the placement unit PASS ₅ . Then, the substrate W held is placed on the placement unit PASS _5A (step S8a), and the substrate W placed on the placement unit PASS _5B is held (step S13a).

The main transport mechanism T ₂ moves to one of the cooling units CP _2, the wafer W held by replacing the substrate W in the cooling unit CP _2. The main transport mechanism T ₂ accesses the developing units DEV ₂ holds the wafer W having received cooling treatment. Cooling unit CP ₂ starts treatment of the newly loaded wafer W (step S14a).

The main transport mechanism T ₂ takes a wafer W that has been developed from the developing unit DEV _2, and places the cooled wafer W on the spin holder 77 of the developing unit DEV _2. The development processing unit DEV ₂ develops the substrate W placed on the rotation holding unit 77 (step S15a). Specifically, while the rotation holding unit 77 rotates the substrate W in a horizontal posture, the developing solution is supplied to the substrate W from any of the slit nozzles 81a to develop the substrate W.

The main transport mechanism T ₂ accesses one of the heating units HP ₂ holding the wafer W is developed. Then, the substrate W is unloaded from the heating unit HP ₂ and the substrate W to be held is put into the heating unit HP ₂ . Subsequently, the main transport mechanism T ₂ conveys the substrate W out of the heating unit HP ₂ to one of the cooling units CP _2, takes out the substrate W that is already processing completed in this cooling unit CP _2. Each of the heating unit HP ₂ and the cooling unit CP ₂ performs a predetermined process on the unprocessed substrate W (Step S16a, Step S17a).

Thereafter, the main transport mechanism T ₂ accesses the placement unit PASS ₂ again and repeats the above-described operation. This operation is controlled by the third controller 95. Thereby, the substrate W is delivered to the placement unit PASS _5A in the order of placement on the placement unit PASS _2A . Similarly, the substrates W are discharged to the placement unit PASS _2B in the order in which the substrates W are placed on the placement unit PASS _5B .

[IF transport mechanism T _{IF to} IF first transport mechanism T _IFA ]
IF first transport mechanism _{T IFA} is accesses the receiver PASS _5, and receives the substrate W placed on the placing part PASS _5A (step S8a). The first IF transport mechanism _TIFA holds the received substrate W, moves to the placement unit PASS-CP, and carries it into the placement unit PASS-CP (step S9).

Next, it receives the substrate W from the first transport mechanism _{T IFA} placing part PASS ₇ for IF (step S11), and moves to a position opposed to the heating and cooling units PHP _2. The first transport mechanism _{T IFA} IF fetches of the heating and cooling unit PHP ₂ already heated after exposure from (PEB) processing has finished substrate W, the substrate W received from the placing part PASS ₇ of the heating and cooling units PHP ₂ Carry in. The heating / cooling unit PHP ₂ heat-treats the unprocessed substrate W (step S13).

The first IF transport mechanism _TIFA transports the substrate W taken out from the heating / cooling unit PHP ₂ to the placement unit PASS _5B (step S13). Subsequently, IF first transport mechanism _{T IFA} transports the wafer W is placed on the placing part PASS _6A to the mounting portion PASS-CP (Step S8b, 9). Next, the IF first transport mechanism _TIFA is transported from the mounting portion PASS ₇ to the heating / cooling unit PHP ₄ . At this time, the substrate W that has been subjected to post-exposure heating (PEB) processing in the heating / cooling unit PHP ₄ is taken out and placed on the placement unit PASS _4B .

Thereafter, the first IF transport mechanism _TIFA accesses the placement unit PASS ₅ again and repeats the above-described operation. This operation is controlled by the sixth controller 98.

[IF transport mechanism T _{IF to} IF second transport mechanism T _IFB ]
The second IF transport mechanism T _IFB takes out the substrate W from the placement unit PASS-CP and transports it to the exposure apparatus EXP (steps S9 and S10). When the exposed substrate W delivered from the exposure machine EXP is received, it is transported to the placement unit PASS ₇ (steps S10 and S11).

Thereafter, the second IF transport mechanism T _IFB accesses the placement unit PASS-CP again and repeats the above-described operation.

  Next, a control example and an operation example for performing a plurality of types of processing on the substrate W in the layers K1 and K3 will be described separately for a normal state and an abnormal state.

(Normal state)
In this specification, the state in which the substrate W can be transferred to all the processing units of each type of processing unit is referred to as a normal state. In the layers K1 and K3, as described above, the substrates W are sequentially transported in the order of the heat processing unit 45, the cooling processing unit 46, the coating processing unit 31, and the cooling processing unit 47, and a series of processing is performed on the substrates W. In this case, the heat processing unit 45 corresponds to the “first type-specific processing unit having the first transport order” in the present invention.

Here, the number of heating units HP included in the heat processing unit 45 is set to the unit number n _45, and the time required for each heating unit HP to process one substrate W is set as a unit processing time t _HP . Similarly, the number of processing units respectively included in the cooling processing unit 46, the coating processing unit 31, and the cooling processing unit 47 is set to unit numbers n _46, n ₃₁ , and n ₄₇ . Further, the time required for the cooling unit CPa, the resist film coating processing unit RESIST, and the cooling unit CPb to process one substrate W is set as unit processing times t _CPa , t _RESIST , and t _CPb , respectively. Each unit processing time t _HP , t _CPa , t _RESIST , t _CPb is a process time in each processing unit HP, CPa, RESIST, CPb, as well as a preparation time, a waiting time, This is a practical time appropriately including various times such as a time for the main transport mechanism T to leave the substrate W with respect to each processing unit. The number of units and the unit processing time of each type of processing unit are known and set in the control unit 90 in advance.

Here, the value obtained by dividing the unit processing time of each type of processing unit by the number of units of the processing unit is referred to as type-specific processing time t ₄₅ , t ₃₁ , t ₄₆ , t _{47 of} each type of processing unit. The type-specific processing times of the type-specific processing units are shown in equations (1)-(4).
t ₄₅ = t _HP / n ₄₅ (1)
t ₃₁ = t _CPa / n ₄₆ (2)
t ₄₆ = t _RESIST / n ₃₁ (3)
t ₄₇ = t _CPb / n ₄₇ (4)

The longest time among the processing times t ₄₅ , t ₃₁ , t ₄₆ , and t ₄₇ of the obtained type-specific processing units is set as the transport cycle time tc.

  In the present embodiment, in a normal state in which all the processing units of each type-specific processing unit can be transferred, the substrates W are transferred one by one between the type-specific processing units whose order follows each other at this transfer cycle time tc interval. This operation is based on the control of the control unit 90. This will be specifically described below.

Please refer to FIG. FIG. 13 is a diagram illustrating processing steps in the hierarchy K1. FIG. 13 illustrates the case where the unit processing time and the number of units of each type of processing unit are as follows.
t _HP = 60 (s)
t _CPa = 30 (s)
t _RESIST = 60 (s)
t _CPb = 30 (s)
n ₄₅ = 3
n ₄₆ = 2
n ₃₁ = 3
n ₄₇ = 2

In this case, the type-specific processing time and the conveyance cycle time tc of each type-specific processing unit take the following values.
t ₄₅ = 20 (s)
t ₄₆ = 15 (s)
t ₃₁ = 20 (s)
t ₄₇ = 15 (s)
tc = 20 (s)

As shown in FIG. 13, the conveyance timings u1, u2, u3,... Are intervals of the conveyance cycle time tc (20 seconds). In each conveyance timing u, to perform the transport operation of the substrate W by the main transport mechanism T _1. When attention is paid to the substrate W1, the wafer W1 is transferred to the first heat treatment unit 45 at the transfer timing u1. Specifically, the substrate W1 is carried into one of the three heating units HP. In the heating unit HP, the substrate W1 is heated for 60 seconds.

  Subsequently, at the transport timing u4, the substrate W1 is transported from the heat processing unit 45 to the cooling processing unit 46 (cooling unit CPa). In the cooling unit CPa, the substrate W1 is cooled for 30 seconds. The substrate W1 is in the cooling unit CPa for 10 seconds from the end of the cooling process to the transport timing u6.

  At the transport timing u6, the substrate W1 is transported from the cooling processing unit 46 to the coating processing unit 31 (resist film coating processing unit RESIST). In the resist film coating processing unit RESIST, a resist film material is applied to the substrate W1 for 60 seconds.

  Subsequently, at the transport timing u9, the substrate W1 is transported from the coating processing unit 31 to the cooling processing unit (cooling unit CPb) 47. The cooling unit CPb cools the substrate W1 for 30 seconds. The substrate W1 is in the cooling unit CPb for 10 seconds from the end of the cooling process to the transport timing u11.

  At the transport timing u11, the substrate W1 is unloaded from the cooling processing unit 47, and the substrate W1 is discharged to the processing block Bb. Therefore, the period required for performing a series of processes on the substrate W1, specifically, from the transport timing u at which the substrate W is transported to the first type-specific processing unit, from the last type-specific processing unit. The period until the transfer timing u when the substrate W is unloaded (hereinafter referred to as “all process periods” as appropriate) is 200 (s). The other substrates W2, W3,... Are also transported to the respective types of processing units in the same order, and a series of processing is performed with a total process period of 200 (s).

Then, by focusing on the transport timing u10 in FIG. 13, illustrating the transfer of the substrate W by the main transport mechanism T _1. Refer to FIG. Figure 14 is a schematic diagram showing the path of the substrate W to the main transport mechanism T ₁ is conveyed in the conveyance timing u10 in FIG. As shown in the drawing, the substrate W11 is transferred from the placement unit PASS _1A to the heat treatment unit 45. At this time, first, the substrate W8 that has been subjected to the heat treatment is taken out of the heating unit HP, and then the substrate W11 is carried into the heating unit HP. Subsequently, the taken-out substrate W8 is transported to the cooling processing unit 46. At this time, the substrate W6 that has been cooled is taken out of the cooling unit CPa, and then the substrate W8 is carried into the cooling unit CPa. Subsequently, the taken out substrate W6 is transported to the coating processing unit 31, and is carried into the resist film coating processing unit RESIST so as to be replaced with the substrate W3 that has already been subjected to the coating processing. Subsequently, the taken-out substrate W3 is transferred to the cooling processing unit 47, and is carried into the cooling unit CPb so as to be replaced with the substrate W1 that has already been cooled. The taken out substrate W1 is placed on the placement portion PASS _2A .

Thereafter, the substrate W placed on the placement unit PASS _2B is received and transferred to the placement unit PASS _1B . The same applies to other transport timing u, the main transport mechanism T ₁ transports between various classification processing unit the order to tandem one by one the substrate W. The operation shown in FIG. 14 is the same as the basic operation of the apparatus 10 described with reference to FIGS.

  As described above, in the normal state, the control unit 90 transports the substrates W one by one between the processing units classified by type whose order is consecutive at the transport cycle time tc interval. Further, the control unit 90 controls the ID unit 1 so that the substrate W is transported to the layer K1 at a single pace during the transport cycle time tc.

The same applies to the hierarchy K2. In other words, if the level K2 is in the normal state, the control unit 90 transports the substrates W one by one between the processing units classified by type whose order is in succession at the transport cycle time tc interval. However, the transport timing of the level K2 and the transport timing of the level K1 are not related to each other and depend on the timing at which the substrate W is placed on the placement units PASS _1A and PASS _3A from the ID unit 1, respectively.

Refer to FIG. FIG. 15 is a diagram illustrating the timing at which each substrate W is transported from the ID unit 1 to each level K1, K3 and the timing at which the substrate W is dispensed from each level K1, K3. As shown in FIG. 15, the ID unit 1 places the substrates W1, W2, W3,... On the placement unit PASS _1A at time 0, 20, 40,. Thereby, each board | substrate W1, W2, W3, ... is conveyed to the hierarchy K1. Similarly, the ID unit 1 places the substrates Wa, Wb, Wc,... On the placement unit PASS _3A at times 10 seconds, 30 seconds, 50 seconds,. Thereby, each board | substrate Wa, Wb, Wc, ... is conveyed to the hierarchy K3. As described above, the ID unit 1 alternately transports the substrates W one by one to the respective layers K1 and K3. Further, the pace at which the substrate W is transported to each of the layers K1 and K3 is one for each transport cycle time tc.

The substrates W1, W2, W3,... Transported to the level K1 are paid out to the placement unit PASS _2A when all process periods (200 seconds in FIG. 15) have elapsed from the time of transport. Similarly, the substrates Wa, Wb, Wc,... Transported to the level K3 are paid out to the placement unit PASS _4A when all process periods have elapsed from the time of transport.

  Therefore, the pace at which the substrates W are paid out from the layers K1 and K3 is one for each transport cycle time tc. Accordingly, the processing capabilities N of the hierarchies K1 and K3 correspond to a value obtained by dividing the unit time by the transport cycle time tc. For example, if the unit time is 1 hour, the processing capacity N when the conveyance cycle tc is 20 seconds is 180 sheets / hour.

  Further, the order of the substrates W delivered from the layers K1 and K3 is the same as the order of the substrates W transferred from the ID unit 1 to the layers K1 and K3. As described above, even if the substrate W is distributed from the ID unit 1 to the plurality of layers K1 and K3, the process steps performed on each substrate W and the timing at which each substrate W is paid out from the layers K1 and K3 There is no change in the order of conveyance from the section 1.

(Abnormal state)
Next, a control example and an operation example for performing a plurality of types of processing on the substrate W in an abnormal state will be described. The abnormal state is a state where a processing unit that cannot transport the substrate W is generated. If at least one processing unit of the type-specific processing unit cannot be transported, it is in an abnormal state. Hereinafter, the processing unit that cannot be transported is referred to as an “abnormal processing unit”.

  Refer to FIG. FIG. 16 is a diagram for explaining the control and processing steps of the hierarchy K1 when the hierarchy K1 is in an abnormal state. FIG. 16A clearly shows a series of steps for transporting a substrate transported via an abnormality processing unit in the normal state, and FIG. 16B shows a substrate transport step in an abnormal state. FIG. In FIG. 16, the process illustrated in FIG. 13 is in a normal state. As shown in the figure, the case where one resist film coating processing unit RESIST of the coating processing section 31 becomes untransportable is shown.

  As shown in FIG. 16A, substrates W3, W6, W9, and W12 to be transported via the resist film coating processing unit RESIST that is an abnormal processing unit in the normal state are the substrates W3, W6, W9, and W12. is there. Further, for example, when paying attention to the substrate W3, in the series of steps of transporting the substrate W3, the transport to the heat processing unit 45 is the transport timing u3, the transport to the cooling processing unit 46 is the transport timing u6, and the abnormal processing unit. Transport to a certain resist film coating unit RESIST is transport timing u8, and transport to the cooling processing unit 47 is transport timing u11. In FIG. 16, each series of transport steps of the substrates W3, W6, W9, and W12 is clearly shown by hatching.

  The control unit 90 provides a series of transport processes for each substrate W related to such an abnormal processing unit by providing information for specifying the abnormal processing unit to the number of units of each known processing unit and the unit processing time. get.

In addition, the control unit 90 stops a series of conveyance of each substrate W scheduled to be conveyed via the abnormality processing unit in the normal state, and does not pass through the abnormality processing unit in the normal state. The substrate W to be transported is transported as scheduled. In that case, if the transportable substrate between Type processing unit the order to tandem even no transport timing u occurs one, it is preferable to stop the operation of the main transport mechanism T ₁ at the conveying timing u .

  FIG. 16B shows an example of the operation. As shown in the drawing, the transfer of the substrate W3 at the transfer timing u3 is stopped, and the substrate W3 is transferred to the transfer timing u4. As a result, the substrate W4 is transported by being lowered from the transport timing u4 to the transport timing u5. Similarly, the substrate W5 and the subsequent substrates W are also sequentially lowered in transport timing.

  According to such control, the period during which a series of processing is performed on each substrate W is not different from that in the normal state. Specifically, as is clear from FIG. 16B, the total process period of each substrate W1, W2, W3,... Is 200 (seconds), and this value is equal to the total process period in the normal state.

Control example of such abnormal conditions, in the operation example, the operation of the main transport mechanism T ₁ at each conveying timing. FIGS. 17A, 17B, and 17C are schematic views showing the transport path of the substrate W at the transport timings u10, u11, and u12 in FIG. 16B, respectively. As shown in the drawing, in an abnormal state, there is no substrate W that can be transferred between all the type-specific processing units in the order of transfer at each transfer timing. Therefore, the main transport mechanism T ₁ transports only transportable substrate W between the type-specific processing sections which order is tandem.

  Further, the control unit 90 controls the ID unit 1 to realize control and operation in such an abnormal state, and at each time point of the transport timings u1, u2, u4, u5, u6,. The substrate W is transferred from the unit 1 to the level K1.

Please refer to FIG. FIG. 18 is a diagram exemplifying the transport timing of the substrate W to each level K1, K3 in the abnormal state and the timing of dispensing the substrate W from each level K1, K3. FIG. 18 shows a case where the hierarchy K3 is in a normal state. As shown in the figure, the ID unit 1 places the substrates W1, W2, W3,... On the placement unit PASS _1A at the time 0 time, 20 seconds, 60 seconds,. Therefore, the ID unit 1 distributes the substrates W so that two substrates W are transported to the layer K1 while the three substrates W are transported to the layer K3.

  However, since all the process periods (200 seconds) of the substrates W in the layers K1 and K3 are the same, as shown in FIG. 18, the priorities of the substrates W to be paid out from the layers K1 and K3 are changed from the ID unit 1 to the layers. The order of the substrates W transferred to K1 and K3 is the same.

  It should be noted that the control at the time of such an abnormality can also be defined at the timing of starting the process in the hierarchy K (specifically, the timing of carrying the substrate W into the heat treatment unit 45), as will be described below.

The number of units that can be transported by the heating processing unit 45, the cooling processing unit 46, the coating processing unit 31, and the cooling processing unit 47 in the abnormal state is n ₄₅ ′, n ₄₆ ′, n ₃₁ ′, and n ₄₇ ′, respectively. The unit processing times t _HP , t _CPa , t _RESIST , and t _CPb of each processing unit are substantially the actual unit processing times given by the following equations (5) to (8) in relation to the transfer cycle time tc. _{t HP ', t CPa',} t RESIST ', t CPb' becomes. In the equations (5) to (8), ru (x) is used as a symbol for rounding up the numerical value x to an integer digit.

t _HP ′ = ru (t _HP / tc) * tc (5)
t _CPa ′ = ru (t _CPa / tc) * tc (6)
t _RESIST '= ru (t _RESIST / tc) * tc (7)
t _CPb ′ = ru (t _CPb / tc) * tc (8)

The value obtained by dividing the real unit processing time of each type processing unit by the number of units that can be transported by the type processing unit is the actual type processing time t ₄₅ ′, t ₃₁ ′, t ₄₆ ′ of each type processing unit. Let t ₄₇ '. The processing time for each substantial type of each type-specific processing unit is shown in Expression (9) to Expression (12).
t ₄₅ ′ = t _HP ′ / n ₄₅ ′ (9)
t ₄₆ ′ = t _CPa ′ / n ₄₆ ′ (10)
t ₃₁ ′ = t _RESIST ′ / n ₃₁ ′ (11)
t ₄₇ ′ = t _CPb ′ / n ₄₇ ′ (12)

Here, among the processing times t ₄₅ ′, t ₃₁ ′, t ₄₆ ′, and t ₄₇ ′ of the actual types of the processing units by type, the processing of the hierarchy K1 in which the value obtained by dividing the unit time is the longest time is abnormal. Capability N ′. Therefore, the ratio r of the processing capability of the hierarchy K1 in the abnormal state to the processing capability N of the hierarchy K1 in the normal state is given by N ′ / N.

  Here, the control unit 90 has a frequency corresponding to the ratio r in the abnormal state as compared to the normal state in the abnormal state with respect to the normal state in which the substrate W is transported to the heat processing unit 45 one by one every transport cycle time tc. It controls so that it may drop and it may be made to convey to the heat processing part 45. FIG. Hereinafter, specific numbers will be shown and described.

Consider a case where one resist film coating processing unit RESIST of the coating processing unit 31 illustrated in FIGS.
n ₄₅ ′ = 3
n ₄₆ ′ = 2
n ₃₁ ′ = 2
n ₄₇ ′ = 2

The real unit processing time of each type of processing unit takes the following values from equations (5)-(8).
t _HP ′ = 60 (s)
t _CPa ′ = 40 (s)
t _RESIST '= 60 (s)
t _CPb = 40 (s)

In this case, the processing time by type of each type processing unit takes the following values from the equations (9) to (12), and the longest time t′max is 30 (s).
t ₄₅ ′ = 20 (s)
t ₄₆ ′ = 20 (s)
t ₃₁ ′ = 30 (s)
t ₄₇ ′ = 20 (s)

The processing capacities N and N ′ are calculated as follows per hour.
N = 3600 / tc = 180 (sheets / hour)
N ′ = 3600 / t′max = 120 (sheets / hour)

Therefore, the ratio r of the processing capability N ′ to the processing capability N is 2/3. Based on this ratio r, the controller 90 heat-treats the substrate W at a frequency (pace) of carrying two substrates W while carrying three substrates W to the heat treatment unit 45 in a normal state. Control is performed so as to convey to the unit 45. Alternatively, the decrease in the processing capacity of the abnormal state with respect to the normal state is one third. Based on this reduced amount, the control unit 90 controls to thin out the transport of the substrate W at a rate of once every three times from the pace of transporting the substrate W to the heat processing unit 45 in the normal state. However, even in an abnormal state, for each transfer cycle time tc intervals in principle by operating the main transport mechanism T ₁ causes the transfer of the substrate W. Accordingly, the control unit 90 controls the substrate W to be transferred to the heat processing unit 45 at the transfer timings u1 and u2, and not to be transferred (thinned out) to the heat processing unit 45 at the transfer timing u3.

  Thus, according to the substrate processing apparatus according to the embodiment, in the abnormal state, the control unit 90 only transports the substrate W scheduled to be transported without going through the abnormal processing unit in the normal state. To perform as planned. Thereby, all the substrates W to be processed in the abnormal state can be transported as in the normal state. As a result, even in an abnormal state, the period during which a series of processing is performed on each substrate W (all process periods) can be made the same as the normal state. Therefore, the processing quality of the substrate W can be maintained in the same manner as the normal state even in the abnormal state.

  In the case of an abnormal state, control is performed so that the number of times the substrate W is transported to the layer K1 (K3) is thinned out from the normal state by the amount that the processing capability of the layer K1 (K3) has decreased compared to the normal state. May be.

  Alternatively, in the case of an abnormal state, the frequency according to the ratio of the processing capability of the hierarchy K1 (K3) in the abnormal state to the processing capability of the hierarchy K1 (K3) in the normal state during a plurality of timings for each transport cycle time tc. The substrate W may be controlled to be transported to the level K1 (K3).

Further, the control unit 90 delivers the substrate W from the ID unit 1 to the main transport mechanism T ₁ (T ₃ ) at a pace corresponding to the processing capability of the layer K1 (K3), so that the ID unit 1 and the layer K1 ( It is possible to prevent the substrate W from accumulating with K3).

  In addition, even if each of the layers K1 and K3 is in a normal state or an abnormal state, the period for performing a series of processing on the substrate W (all process periods) does not change. Therefore, even if the different layers K1 and K2 are transported, the order of the substrates W is not changed or overtaken.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the above-described embodiment, the type-specific processing units in the layers K1 and K3 have been described as the coating processing unit 31, the heating processing unit 45, and the cooling processing units 46 and 47. You may comprise so that the processing part according to type which performs may be provided. For example, you may change so that the coating process part which has the application | coating process unit for anti-reflective film which apply | coats the material for anti-reflective films may be provided as a process part classified by type.

  (2) In the above-described embodiment, it has been described that the substrates W are sequentially transported in the order of the heat processing unit 45, the cooling processing unit 46, the coating processing unit 31, and the cooling processing unit 47. You may change to

  (3) In the above-described embodiment, the number of units of each type of processing unit and the unit processing time of the unit are exemplified, but the present invention is not limited to this.

  (4) In the above-described embodiment, the transport control of the substrate W in each of the normal state and the abnormal state has been described using the layers K1 and K3 as an example, but is not limited thereto. For example, the same control may be performed as appropriate in the hierarchies K2 and K4. Further, it may be changed so that the control is performed in a single layer such as only the layer K1.

  (5) In the above-described embodiment, the processing blocks Ba and Bb each have the two hierarchies K. However, the present invention is not limited to this. For example, it may be changed so as to have three or more layers, or only a single layer may be used.

  (6) In the above-described embodiment, the process of forming a resist film on the substrate W, the post-exposure heating (PEB) process, and the development process are performed. However, the present invention is not limited to this. For example, the apparatus may be changed to an apparatus that performs other processes such as a cleaning process on the substrate W. As a result, the type and number of each processing unit are appropriately selected and designed.

It is a top view which shows schematic structure of the substrate processing apparatus which concerns on an Example. It is a schematic side view which shows arrangement | positioning of the processing unit which a substrate processing apparatus has. It is a schematic side view which shows arrangement | positioning of the processing unit which a substrate processing apparatus has. It is each vertical sectional view of the aa arrow in FIG. It is each vertical sectional view of the bb arrow in FIG. It is each vertical sectional view of cc arrow in FIG. It is each vertical sectional view of the dd arrow in FIG. (A) is a top view of a coating processing unit, (b) is sectional drawing of a coating processing unit. It is a perspective view of a main conveyance mechanism. It is a control block diagram of the substrate processing apparatus which concerns on an Example. It is a flowchart of a series of processes performed on a substrate. It is a figure which shows typically the operation | movement which each conveyance mechanism repeats, respectively. It is a figure which illustrates the process of the process in the hierarchy of a normal state. It is a schematic diagram showing a path of a substrate W transported by the main transport mechanism at each transport timing. It is a figure which illustrates the timing which conveys each board | substrate from an ID part to each hierarchy, and the timing which pays out a board | substrate from each hierarchy. It is a figure which illustrates the process of the control in the case where a hierarchy is abnormal, and the process in the hierarchy. (A), (b), (c) is a schematic diagram which shows the path | route of the board | substrate which a main conveyance mechanism conveys in each conveyance timing. It is a figure which illustrates the timing which conveys each board | substrate from an ID part to each hierarchy, and the timing which pays out a board | substrate from each hierarchy.

Explanation of symbols

1 ... Indexer part (ID part)
5 ... Interface part (IF part)
31 ... Application processing part (type-specific processing unit)
DESCRIPTION OF SYMBOLS 42 ... Heat processing unit 45 ... Heat processing part 46, 47 ... Cooling process part 61 ... 1st blowing unit 61a ... 1st blower outlet 62 ... Discharge unit 62a ... Discharge port 65 ... 2nd gas supply pipe 66 ... 2nd gas discharge pipe DESCRIPTION OF SYMBOLS 90 ... Control part 91 ... Main controller 93-99 ... 1st thru | or 7th controller K, K1, K2, K3, K4 ... Hierarchy B, Ba, Bb ... Processing block RESIST ... Coating processing unit for resist film HP ... Heating unit CP , CPa, CPb ... cooling unit DEV ... developing unit EEW ... edge exposing unit T _ID ... ID's transport mechanism _{T 1, T 2, T 3} , T 4 ... carrying the main transport mechanism T _IF ... IF mechanism T _{IFA ...} first first transport mechanism T _{IFB ...} second transport mechanism PASS, PASS-CP ... mounting part _{A 1, A 2, A 3} , A ₄ ... transporting space EXP ... exposure machine C ... cassette W ... substrate _{n 45, n 46, n 31} , n 47 ... number of units _{t HP, t CPa, t RESIST} , t CPb ... unit process time _{t 45,} t 31, t ₄₆ , t ₄₇ ... Processing time by type u... Transport timing tc... Transport cycle time t _HP ', t _CPa ', t _RESIST ', t _CPb ' ... Real unit processing time t ₄₅ ', t ₃₁ ', t ₄₆ ', t ₄₇ ′… processing time by type N, N ′… processing capability r… ratio of processing capability of layer K1 in abnormal state to processing capability in normal state

Claims (9)

In a substrate processing apparatus that performs multiple types of processing on a substrate,
A processing unit configured to include a plurality of type-specific processing units provided for each type of processing performed on the substrate, and a main transport mechanism that transports the substrate to each type-specific processing unit in a predetermined order;
A control unit for controlling the main transport mechanism;
With
Each of the plurality of type-specific processing units has an arbitrary number of processing units that perform a single type of processing corresponding to the type-specific processing unit,
In the normal state in which the control unit can transport all processing units of each type processing unit, the control unit causes the first type processing unit having the first transfer order to transfer the substrate at a predetermined transfer cycle time interval, and , Transport the substrates one by one between each type of processing unit in order,
In an abnormal state in which at least one of the processing units of each type cannot be transported, the first type is more than the normal state by an amount corresponding to a decrease in processing capacity of the processing unit in the abnormal state compared to the normal state. A substrate processing apparatus characterized by thinning out the number of times of transporting a substrate to another processing unit and transporting only a substrate that can be transported between processing units according to type, the order of which is different for each transport cycle time. In a substrate processing apparatus that performs multiple types of processing on a substrate,
A processing unit configured to include a plurality of type-specific processing units provided for each type of processing performed on the substrate, and a main transport mechanism that transports the substrate to each type-specific processing unit in a predetermined order;
A control unit for controlling the main transport mechanism;
With
Each of the plurality of type-specific processing units has an arbitrary number of processing units that perform a single type of processing corresponding to the type-specific processing unit,
In a normal state in which the controller can transport all processing units of each type-specific processing unit, the control unit causes the first type-specific processing unit to transport the substrate at a predetermined transport cycle time interval, and , Transport the substrates one by one between each type of processing unit in order,
In an abnormal state in which one processing unit of at least one type of processing unit cannot be transferred, the processing capability of the processing unit in the abnormal state is different from the processing capability of the processing unit in the normal state during a plurality of timings for each transfer cycle time. The substrate is transported to the first type-specific processing unit at a frequency according to the ratio, and only the substrates that can be transported between the type-specific processing units whose order follows each transport cycle time are transported. A substrate processing apparatus. In the substrate processing apparatus of Claim 1 or Claim 2 ,
The number of processing units in each type of processing unit is the number of units,
The time required for processing each substrate by the processing unit for each type of processing is the unit processing time,
A value obtained by dividing the unit processing time of each type of processing unit by the number of units of the type of processing unit as the type of processing time of the type of processing unit,
The substrate processing apparatus, wherein the transfer cycle time is the longest time among the processing times by type of the processing units by type. The substrate processing apparatus according to claim 3 ,
The processing capacity of the processing unit in the normal state is a value obtained by dividing unit time by the transport cycle time,
A value obtained by dividing each unit processing time by the transfer cycle time is rounded up to an integer, and a value obtained by multiplying the rounded up value by the transfer cycle time is a substantial unit processing time.
The value obtained by dividing the real unit processing time of each type of processing unit by the number of units that can be transported by the type of processing unit is the processing time by type of the processing unit by type,
The processing capability of the processing unit in the abnormal state is a value obtained by dividing a unit time by the longest time among the processing times by type of each type of processing unit. In the substrate processing apparatus in any one of Claims 1-4 ,
There is no substrate that can be transported in all of the processing units classified by type whose order follows each other at each timing of the transport cycle time, and the timing of transporting the substrate to the first processing unit classified by type Otherwise, the operation of the main transport mechanism at that timing is stopped. In the substrate processing apparatus in any one of Claims 1-5 ,
An indexer unit that transports the substrate to the processing unit by delivering the substrate to and from the main transport mechanism;
The control unit controls the indexer unit to transfer the substrate from the indexer unit to the processing unit in accordance with the pace of substrate transfer to the first type processing unit. A substrate processing apparatus. In the substrate processing apparatus in any one of Claims 1-6 ,
A plurality of the processing units are provided in the vertical direction,
The substrate processing apparatus, wherein the control unit performs control according to the normal state or the abnormal state for each processing unit. In the substrate processing apparatus in any one of Claims 1-7 ,
The processor is
A heat treatment section for performing heat treatment on the substrate;
A resist film material application processing unit for applying a resist film material to the substrate;
As a processing section according to type, and a resist film is formed on the substrate. In the substrate processing apparatus in any one of Claims 1-7 ,
The processor is
A heat treatment section for performing heat treatment on the substrate;
A development processing section for supplying a developer to the substrate;
As a processing unit classified by type.

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