JP5964654B2 - Substrate processing method - Google Patents

Description

This invention relates to a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, the optical disc substrate or the like (hereinafter, simply referred to as "substrate") relates to a substrate processing method for performing a series of processing to.

  Conventionally, as this type of apparatus, there is an apparatus that forms a resist film on a substrate, exposes the substrate on which the resist film is formed with a separate exposure machine, and develops the exposed substrate. Specifically, various chemical processing units such as a resist film forming coating processing unit and a heat treatment unit are provided together with a single main transport mechanism to form one block, and a plurality of such blocks are arranged side by side to perform substrate processing. The device is configured. In this apparatus, a substrate is transferred to each block, and processing is performed in each block (see, for example, Patent Document 1).

JP 2003-324139 A

However, the conventional example having such a configuration has the following problems.
That is, in the conventional apparatus, the main transport mechanism requires 5 to 10 transport processes to process one substrate in the block, and each transport process takes about several seconds. Assuming that the number of transport steps is 6 and each takes 5 seconds, the throughput in the block can be up to 30 seconds per substrate (120 substrates per hour). However, since there is not much room for reducing the number of transport steps of a single main transport mechanism or shortening the time required for each transport step, it is difficult to further increase the throughput in the block. For this reason, there is a disadvantage that it is difficult to improve the throughput of the entire apparatus. On the other hand, it is conceivable to increase the main transport mechanism. However, when the number of main transport mechanisms in the block is increased, there is a disadvantage in that the footprint increases with an increase in the number of chemical treatment units and heating units accordingly.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing method capable of improving the throughput without increasing the installation area of the substrate processing apparatus.

In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing method for processing a substrate in a substrate processing apparatus including an indexer unit, a processing unit, and an interface unit, wherein the processing units are arranged in two vertical directions . consists hierarchy, each layer includes a processing unit for processing the substrate, and a main transport mechanism for transporting the substrate relative to the processing unit provided in the hierarchy, the resist film on the substrate in the second hierarchy A step of performing the forming process in parallel, a step of performing the developing process on the substrate in the two layers in parallel, and a step of taking out the substrate from the cassette and forming a resist film in the indexer unit a step of conveying alternately, in the interface section, receives the substrate from each layer performs a process of forming a resist film, a step of transporting to the exposure apparatus which is an external device The provided, when the substrate to the interface portion from the other of the hierarchy have been paid out when the substrate is no longer dispensed to the interface portion from one hierarchy for operating to form a resist film, the interface unit is the When the board paid out from the other level is transported to the buffer unit and the board starts to be paid out again from the level where the board has been paid out, the interface unit is connected to the board paid out from this level. In this substrate processing method, the substrate placed on the buffer unit is alternately transferred to an exposure machine.

  [Operation / Effect] According to the first aspect of the present invention, a plurality of hierarchies are provided in the processing section. And the process which forms a resist film in a board | substrate in each of a 2 or more hierarchy is performed in parallel. Further, development processing is performed on the substrate in parallel in each of the two or more layers. Therefore, the processing capability of the substrate processing apparatus can be increased. In addition, since a plurality of layers are provided in the processing unit, it is possible to avoid an increase in the installation area of the substrate processing apparatus.

  In the present invention, it is preferable that the indexer unit includes a step of unloading the substrate from the cassette and transporting the substrate alternately to each layer for performing a process of forming a resist film.

  In the present invention, it is preferable that the indexer unit includes a step of alternately receiving the substrates from the respective layers on which the development processing is performed and storing them in a cassette.

  In the present invention, both the step of performing the process of forming the resist film and the step of performing the development process are performed at each level, and the method further includes unloading the substrate from the cassette at the indexer unit. Preferably, the method includes the steps of alternately transporting the unloaded substrates to each level, receiving a substrate from each level when the substrate is transported to each level, and storing the received substrate in a cassette.

  In the present invention, it is preferable that the interface unit includes a step of alternately receiving a substrate from each layer that performs a process of forming a resist film and transporting the substrate to an exposure device that is an external device.

  In the present invention, it is preferable that the interface unit includes a step of receiving a substrate from an exposure device which is an external device and alternately transporting the substrate to each layer where development processing is performed.

  In the present invention, both the step of performing the process of forming the resist film and the step of performing the development process are performed in each layer, and the method further includes the substrate alternately from each layer in the interface unit. And receiving the substrate from the exposure machine, and alternately transferring the substrate to each level, and receiving the substrate from each level when the substrate is transferred to each level. Preferably it is.

  In the present invention, it is preferable that the substrate is dispensed to the interface unit in the order received from the indexer unit in each layer where the process of forming a resist film on the substrate is performed.

  In the present invention, it is preferable that, in each layer where the development processing is performed on the substrate, the substrate is dispensed to the indexer unit in the order received from the interface unit.

  In the present invention, it is preferable that the control of each layer for performing the process of forming the resist film on the substrate is independent of each other.

  In the present invention, it is preferable that the control of each layer for developing the substrate is independent of each other.

  In the present invention, in the step of performing the process of forming the resist film in parallel, a series of processing steps including a process of applying a resist film material to the substrate and a process of performing a heat treatment on the substrate are sequentially performed on each substrate. In addition, it is preferable to perform the series of processing steps for each substrate in a uniform period.

  In the present invention, it is preferable that in the step of transporting to the exposure machine, the substrates are transported to the exposure machine in the same order as the order in which the substrates are taken out from the cassette.

  In the present invention, when the order of the substrates received from the layer for performing the process of forming the resist film in the interface portion and the order of the substrates taken out from the cassette in the indexer portion are different, the substrate is placed on the buffer portion. In addition, it is preferable that a subsequent substrate can be received from each layer that performs a process of forming a resist film in the interface unit.

  The present specification also discloses an invention relating to the following substrate processing apparatus.

  (1) In a substrate processing apparatus for processing a substrate, each main transport includes a plurality of main transport mechanisms arranged in the horizontal direction and a plurality of processing units provided for each main transport mechanism to process a substrate. The substrate is transferred to another main transfer mechanism adjacent in the horizontal direction while transferring the substrate to the corresponding processing unit, and a substrate processing row for performing a series of processing on the substrate is formed. A substrate processing apparatus comprising a plurality of substrates.

  According to the invention described in (1), by providing a plurality of substrate processing rows in the vertical direction, substrates can be processed in parallel in each substrate processing example. Therefore, the processing capability of the substrate processing apparatus can be increased. Further, since the substrate processing rows are provided in the vertical direction, it is possible to avoid an increase in the installation area of the substrate processing apparatus. Note that the arrangement of the main transport mechanisms is not limited to one line, and may be a plurality of lines, and is not limited to a linear arrangement, but may be a curvilinear or zigzag arrangement. In each substrate processing row, the processing units are not limited to be arranged side by side, and may be stacked.

  (2) In the present invention, the arrangement of the main transport mechanism and the processing unit in each substrate processing row is preferably substantially the same in plan view. According to this configuration, the device configuration can be simplified.

  (3) In this invention, it is preferable to provide the gas supply port which supplies clean gas to the conveyance space where the said main conveyance mechanism is installed, and the gas discharge port which discharges | emits gas from the said conveyance space. According to this configuration, the atmosphere of the conveyance space can be kept clean.

  (4) In this invention, it is preferable that the said conveyance space is interrupted | blocked for every board | substrate process row | line, and the said gas supply port and the said gas exhaust port are provided separately for every board | substrate process row | line | column. According to this structure, the atmosphere of a conveyance space can be kept cleaner.

  (5) In the present invention, a blowout unit in which the gas supply port is formed and a discharge unit in which the gas discharge port is formed, and at least one of the blowout unit or the discharge unit is a substrate processing row. It is preferable to block the atmosphere every time. According to this configuration, the device configuration can be simplified.

  (6) In this invention, it is preferable that the said gas supply port is arrange | positioned in the position higher than the said gas discharge port. According to this structure, the atmosphere of a conveyance space can be kept cleaner.

  (7) In this invention, it is preferable that the said gas supply port is arrange | positioned at the upper part of the said conveyance space, and the said gas exhaust port is arrange | positioned at the lower part of the said conveyance space. According to this configuration, since a downward airflow can be formed in the transport space, the transport space can be kept clean.

  (8) In the present invention, an indexer transport mechanism that transports a substrate to a cassette that accommodates a plurality of substrates is provided, and the indexer transport mechanism is one end that is a main transport mechanism on one end side of each substrate processing row. The substrate is transferred to and from the transfer mechanism, and the upper end transfer mechanism of each one end transfer mechanism is transferred at a height near the lower portion thereof, and the lower end of each end transfer mechanism is It is preferable that the substrate is transferred at a height position near the upper portion of the one-end transport mechanism. According to this configuration, since the transfer positions of the upper and lower substrates are close to each other, the amount of lifting of the indexer transport mechanism can be suppressed. Therefore, the processing efficiency of the indexer transport mechanism can be improved.

  (9) In the present invention, the indexer transport mechanism includes a placement unit that is provided between the indexer transport mechanism and each one-end transport mechanism, and places the substrate thereon, and the indexer transport mechanism includes the substrate via each placement unit. It is preferable to deliver. According to this configuration, since the substrate is transferred via the mounting portion, the transfer efficiency can be improved as compared with the case where the transfer mechanisms directly transfer the substrates.

  (10) In a substrate processing apparatus that performs processing on a substrate, a processing unit that is provided at each level in the vertical direction and that processes the substrate, and a main unit that is provided at each level and transports the substrate to the processing unit at the level A substrate processing apparatus, wherein a plurality of processing blocks having a transport mechanism are arranged in a horizontal direction, and a series of processing is performed on a substrate by delivering the substrate between main transport mechanisms at the same level of adjacent processing blocks.

  According to the invention described in (10) above, the processing units belonging to each layer of the processing blocks arranged in the horizontal direction and the transport mechanism perform a series of processes on the substrate in parallel. Therefore, the processing capability of the substrate processing apparatus can be increased. Further, since the processing units and the transport mechanism are arranged in the vertical direction to have a hierarchical structure, it is possible to avoid an increase in the installation area of the substrate processing apparatus.

  (11) In the present invention, it is preferable that a housing that collectively accommodates a plurality of processing units and a plurality of main transport mechanisms included in one processing block is provided for each processing block. According to this structure, since it can handle by a process block unit, manufacture and repair of a substrate processing apparatus can be simplified.

  (12) In the present invention, each processing block includes a shielding plate provided between each level, a gas supply port for supplying clean gas to the transfer space of the main transfer mechanism at each level, and a main transfer mechanism at each level. It is preferable to include a gas discharge port for discharging gas from the transfer space. According to this configuration, it is possible to prevent dust generated by the transport mechanism from reaching other levels. Moreover, the conveyance space of each hierarchy can be kept clean.

  (13) In the present invention, a blowout unit in which the gas supply port is formed and a discharge unit in which the gas discharge port is formed, and at least one of the blowout unit or the discharge unit is the shielding plate. It is preferable to serve as both. The device configuration can be simplified.

  (14) In this invention, it is preferable that the gas supply port of each conveyance space is arrange | positioned in the position higher than the gas discharge port of the conveyance space. According to this configuration, since the airflow in the transfer space becomes a so-called downflow, the transfer space can be kept clean.

  (15) In the present invention, an indexer transport mechanism that transports a substrate to a cassette that accommodates a plurality of substrates and delivers the substrate to and from a main transport mechanism at each level in a processing block at one end. It is preferable that each position where the indexer transport mechanism delivers the substrate is close to the main transport mechanism of each layer in the processing block on one side end. According to this configuration, the amount of lifting of the indexer transport mechanism can be suppressed, so that the processing efficiency of the indexer transport mechanism can be increased.

  (16) In the present invention, the indexer transport mechanism includes a mounting portion that is provided between the main transport mechanism of each layer in the processing block at one side end and the indexer transport mechanism and mounts the substrate. It is preferable to deliver the substrate through each mounting portion. According to this configuration, the conveyance efficiency can be improved as compared with a mechanism in which the conveyance mechanisms directly transfer the substrates.

  (17) In a substrate processing apparatus for processing a substrate, an indexer unit including an indexer transport mechanism that transports a substrate to a cassette that stores a plurality of substrates, and a coating processing block adjacent to the indexer unit. The coating processing unit and heat treatment unit for forming a resist film on the substrate are provided for each level in the vertical direction, and the substrate is transported to the coating processing unit and heat treatment unit for each level provided for each level. A coating processing block including a main transport mechanism, a development processing block adjacent to the coating processing block, provided in each vertical layer, and a development processing unit and a heat treatment unit for developing a substrate, A main transport that is provided for each level and transports the substrate to the development processing unit and heat treatment unit of the level. A development processing block including a mechanism, and an interface unit that is adjacent to the development processing block and includes an interface transport mechanism that transports a substrate to an exposure machine separate from the apparatus, and transports the indexer The mechanism delivers the substrate to and from the main transport mechanism at each level in the coating processing block, and the main transport mechanism at each level in the coating processing block communicates with the main transport mechanism at the same level in the development processing block. A substrate processing apparatus, wherein the interface transport mechanism transfers a substrate to and from a main transport mechanism at each level in the development processing block.

  According to the invention described in (17) above, the indexer transport mechanism sequentially takes out the substrates from the cassette, and passes the substrates to the transport mechanism in each layer of the coating processing block. The transport mechanism of each layer that has received the substrate transports the substrate to a coating processing unit or a heat treatment unit in charge. The transported substrate is subjected to required processing in parallel by the processing units at each level. The transport mechanism at each level of the coating processing block transfers the substrate on which the resist film is formed to the transport mechanism at the same level of the adjacent development processing block. The transport mechanism at each level of the development processing block transfers the substrate to the interface transport mechanism of the adjacent interface unit. The interface transport mechanism passes the received substrate to an exposure device that is an external device. The exposed substrate is returned to the interface unit again. The interface transport mechanism passes each substrate to the transport mechanism at each level of the development processing block. The transport mechanism of each layer that has received the substrate transports the substrate to the development processing block or the heat treatment unit in charge. The transported substrate is subjected to required processing in parallel by the processing units at each level. The transport mechanism at each level of the development processing block transfers the developed substrate to the transport mechanism at the same level of the adjacent coating processing block. The transport mechanism in each layer of the coating processing block transfers the substrate to the indexer transport mechanism in the indexer unit. The indexer transport mechanism stores the substrate in a predetermined cassette. As described above, according to this configuration, since the resist film generation process and the development process are performed in parallel at the upper and lower layers, the processing efficiency of the substrate processing apparatus can be increased. Further, since the coating processing block and the development processing block have an upper and lower hierarchical structure, it is possible to avoid an increase in the installation area of the substrate processing apparatus.

  (18) In the present invention, it is preferable that control means for controlling the interface transport mechanism to send the substrate to the exposure device in the same order as the order in which the indexer transport mechanism takes out the substrate from the cassette is provided. According to this configuration, it is possible to suitably manage a plurality of substrates.

  (19) In the present invention, the interface unit includes a buffer unit that temporarily stores a substrate, and the control unit is configured to perform development processing blocks in an order different from the order in which the indexer transport mechanism takes out the substrate from the cassette. It is preferable that the interface transport mechanism receives the substrate and transports it to the buffer unit when the substrate is paid out. According to this configuration, even if the transport mechanism for the indexer is in an order different from the order in which the substrates are taken out from the cassette, the substrate discharged from the development processing block is moved to the buffer unit, so that it can continue from the development processing block. Dispensing of the substrate can be allowed. Thus, the substrates can be suitably processed in a predetermined order.

  (20) In the present invention, a coating processing unit for forming a resist film on a substrate includes a resist film coating processing unit for coating a resist film material on the substrate, and a reflection for coating a processing liquid for an antireflection film on the substrate. It is preferable that the coating processing unit for prevention films is included. According to this structure, a board | substrate can be processed suitably.

  (21) In the present invention, the substrate processing apparatus is characterized in that a series of processing performed in each substrate processing row is the same.

  According to the invention as described in said (21), an apparatus structure can be simplified.

  (22) In the present invention, the processing unit includes a liquid processing unit that performs liquid processing on the substrate and a heat treatment unit that performs heat treatment on the substrate.

  According to the invention as described in said (22), a various process can be performed to a board | substrate.

  (23) The present invention is characterized in that a single second gas supply pipe for supplying clean gas to each of the plurality of processing units corresponding to the respective main transport mechanisms positioned in the vertical direction is provided. Substrate processing apparatus.

  According to the invention described in (23), the installation area can be reduced.

  (24) In the present invention, the substrate processing apparatus is characterized in that in each processing block, the transport mechanism of each layer is arranged at the same position in plan view.

  According to the invention as described in said (24), an apparatus structure can be simplified.

  (25) In the present invention, in each processing block, the processing performed by each processing unit arranged in the vertical direction is the same.

  According to the invention as described in said (25), an apparatus structure can be simplified.

  (26) In the present invention, there is provided a substrate processing apparatus comprising a single second gas supply pipe for supplying clean gas to a plurality of processing units arranged in the vertical direction.

  According to the invention described in (26), the installation area can be reduced.

  (27) In the present invention, the substrate processing apparatus is characterized in that the processing units of each layer are stacked.

  According to the invention as described in said (27), an apparatus structure can be simplified.

  The substrate processing apparatus according to the present invention has a hierarchical structure in which a plurality of substrate processing rows configured by arranging a plurality of processing units for performing a series of processing on a substrate and a plurality of main transfer mechanisms in the horizontal direction are arranged in the vertical direction. As a result, the substrates can be processed in parallel in the substrate processing sequence of each layer. Therefore, the processing capability of the substrate processing apparatus can be increased. In addition, since the substrate processing rows are arranged in the vertical hierarchy, it is possible to avoid an increase in the installation area of the substrate processing apparatus.

  According to the substrate processing method of the present invention, a plurality of levels are provided in the processing unit. And the process which forms a resist film in a board | substrate in each of a 2 or more hierarchy is performed in parallel. Further, development processing is performed on the substrate in parallel in each of the two or more layers. Therefore, the processing capability of the substrate processing apparatus can be increased. In addition, since a plurality of layers are provided in the processing unit, it is possible to avoid an increase in the installation area of the substrate processing apparatus.

It is a top view which shows schematic structure of the substrate processing apparatus which concerns on an Example. It is a schematic side view which shows arrangement | positioning of the processing unit which a substrate processing apparatus has. It is a schematic side view which shows arrangement | positioning of the processing unit which a substrate processing apparatus has. It is each vertical sectional view of the aa arrow in FIG. It is each vertical sectional view of the bb arrow in FIG. It is each vertical sectional view of cc arrow in FIG. It is each vertical sectional view of the dd arrow in FIG. (A) is a top view of a coating processing unit, (b) is sectional drawing of a coating processing unit. It is a perspective view of a main conveyance mechanism. It is a control block diagram of the substrate processing apparatus which concerns on an Example. 3 is a flowchart showing a series of processes performed on a substrate W. It is a figure which shows typically the operation | movement which each conveyance mechanism repeats, respectively.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment. FIGS. 2 and 3 are schematic side views showing the arrangement of processing units of the substrate processing apparatus. FIGS. FIG. 3 is a vertical sectional view taken along arrows aa, bb, cc, dd, and dd in FIG. 1.

  The embodiment is a substrate processing apparatus that forms a resist film or the like on a substrate (for example, a semiconductor wafer) W and develops the exposed substrate W. This apparatus is divided into an indexer section (hereinafter referred to as “ID section”) 1, a processing section 3, and an interface section (hereinafter referred to as “IF section”) 5. On both sides of the processing unit 3, an ID unit 1 and an IF unit 5 are provided adjacent to each other. The IF unit 5 is further provided with an exposure device EXP that is an external device separate from the present apparatus.

The ID unit 1 takes out the substrate W from the cassette C that accommodates a plurality of substrates W, and accommodates the substrate W in the cassette C. The ID unit 1 includes a cassette mounting table 9 on which the cassette C is placed and an ID transport mechanism T _ID for transporting the substrate W to each cassette C. The ID transport mechanism T _ID corresponds to the indexer transport mechanism in the present invention.

The processing unit 3 includes four main transport mechanisms T ₁ , T ₂ , T ₃ , and T ₄ . The processing unit 3 is divided into first to fourth cells 11, 12, 13, and 14 for each main transport mechanism T ₁ , T ₂ , T ₃ , and T ₄ . In the first and third cells 11 and 13, a resist film or the like is formed on the substrate W. In the second and fourth cells 12 and 14, the substrate W is developed. Each of these cells 11 to 14 is provided with a plurality of processing units (described later) in which the main transport mechanisms T ₁ , T ₂ , T ₃ and T ₄ bear the transport.

  The first and second cells 11, 12 arranged in the horizontal direction are connected to form one substrate processing row connecting the ID unit 1 and the IF unit 5. In addition, the third and fourth cells 13 and 14 arranged in the horizontal direction are also connected to form one substrate processing row connecting the ID unit 1 and the IF unit 5. These two substrate processing rows are provided substantially in parallel in the vertical direction. In other words, the processing unit 3 is configured by a substrate processing sequence having a hierarchical structure.

  In addition, the substrate processing rows of each layer are stacked in the vertical direction. That is, the first cell 11 is stacked on the third cell 13, and the second cell 12 is stacked on the fourth cell 14. Therefore, when the processing block configured by the first and third cells 11 and 13 and the processing block configured by the second and fourth cells 12 and 14 are arranged in the horizontal direction, the processing unit 3 is configured. I can say that.

The IF unit 5 delivers the substrate W to and from the exposure machine EXP. IF section 5 is provided with an IF's transport mechanisms _{T IF} for transporting the substrate W. The IF transport mechanism T _IF includes a first transport mechanism T _IFA and a second transport mechanism T _IFB . The first transport mechanism T _IFA and the second transport mechanism T _IFB correspond to the interface transport mechanism in this invention.

The ID transport mechanism T _ID transfers the substrate W between the main transport mechanisms T ₁ and T _{3 of} the first and third cells 11 and 13 adjacent to the ID unit 1. In addition, the main transport mechanisms T _{1 to} T ₄ of each cell 11 to 14 deliver and receive the substrate W to and from other cells in the same hierarchy to be connected. Furthermore, IF's transport mechanisms _{T IF} to transfer wafers W between the second main transport mechanism _T 2, _{T 4} of the fourth cell 12, 14 adjacent to the IF section 5. As a result, the substrate W is transported in parallel between the ID unit 1 and the IF unit 5 through the two substrate processing rows, and a series of processing is performed on the substrate W in each substrate processing row. The main transport mechanisms T ₁ and T ₃ correspond to the one-end transport mechanism in the present invention.

The apparatus further includes placement units PASS ₁ and PASS ₃ for transferring the substrate W between the _ID transport mechanism T _ID and the main transport mechanisms T ₁ and T ₃ . Similarly, a placement unit PASS ₂ for delivering the substrate between the main transport mechanisms T ₁ and T ₂ and a placement unit PASS ₄ for delivering the substrate between the main transport mechanisms T ₃ and T ₄ are provided. . In addition, there are provided placement units PASS ₅ and PASS ₆ for delivering the substrate W between the main transport mechanisms T ₂ and T ₄ and the IF transport mechanism T _IF . Each of the placement portions PASS _{1 to} PASS ₆ has a plurality of projecting support pins, and is configured so that the substrate W can be placed in a substantially horizontal posture by these support pins.

[ID part 1]
Hereinafter, the order from the ID part 1 will be described. The cassette mounting table 9 is configured to be able to mount four cassettes C in a row. The ID transport mechanism T _ID includes a movable table 21 that horizontally moves the side of the cassette mounting table 9 in the direction in which the cassettes C are arranged, a lifting shaft 23 that expands and contracts in the vertical direction with respect to the movable table 21, and a lifting shaft 23. And a holding arm 25 that rotates and moves back and forth in the turning radius direction to hold the substrate W, so that the substrate W can be transported between the cassettes C, the placement unit PASS ₁ and the placement unit PASS _3. It is configured.

[First cell 11]
A transport space A ₁ for transporting the substrate W is formed in a strip shape that passes through the center of the first cell 11 and is parallel to the arrangement direction of the cells 11 and 12. The processing units of the first cell 11 are a coating processing unit 31 that applies a processing liquid to the substrate W and a heat treatment unit 41 that performs a heat treatment on the substrate W. Coating units 31 are arranged on one side of the transporting space A _1, and heat-treating units 41 are arranged on the other side.

The coating units 31 are arranged vertically and horizontally, each facing the transporting space A _1. In the present embodiment, a total of four coating processing units 31 are arranged in two rows and two stages. The coating processing unit 31 includes an antireflection film coating processing unit BARC that performs processing for forming an antireflection film on the substrate W, and a resist film coating processing unit RESIST that performs processing for forming a resist film on the substrate W. The coating processing unit 31 corresponds to the liquid processing unit in this invention.

  Please refer to FIG. FIG. 8A is a plan view of the coating processing unit, and FIG. 8B is a cross-sectional view of the coating processing unit. Each coating processing unit 31 includes a rotation holding unit 32 that rotatably holds the substrate W, a cup 33 provided around the substrate W, a supply unit 34 that supplies a processing liquid to the substrate W, and the like. Two sets of rotation holding portions 32 and cups 33 provided in each stage are provided side by side without being partitioned by a partition wall or the like. The supply unit 34 has a plurality of nozzles 35, a gripping unit 36 that grips one nozzle 35, and the gripping unit 36 is moved so that the one nozzle 35 is displaced from the processing position above the substrate W and the top of the substrate W. A nozzle moving mechanism 37 for moving between the standby position and the standby position is provided. One end of a processing liquid pipe 38 is connected to each nozzle 35 in communication. The processing liquid pipe 38 is movably provided to allow movement of the nozzle 35 between the standby position and the processing position. The other end of each processing liquid pipe 38 is connected to a processing liquid supply source (not shown). Specifically, in the case of the antireflection film coating processing unit BARC, the processing liquid supply source supplies different types of antireflection film processing liquids to the nozzles 35. In the case of the resist film coating processing unit RESIST, the processing liquid supply source supplies different types of resist film materials to the nozzles 35.

  The nozzle moving mechanism 37 includes a first guide rail 37a and a second guide rail 37b. The first guide rails 37a are arranged in parallel with each other with the two cups 33 arranged side by side. The second guide rail 37 b is slidably supported by the two first guide rails 37 a and is installed on the two cups 33. The grip portion 36 is slidably supported by the second guide rail 37b. Here, the directions guided by the first guide rail 37a and the second guide rail 37b are both substantially horizontal directions and are substantially orthogonal to each other. The nozzle moving mechanism 37 further includes a drive unit (not shown) that slides and moves the second guide rail 37b and slides the grip portion 36. When the driving unit is driven, the nozzle 35 held by the holding unit 36 is moved to a position above the two rotation holding units 32 corresponding to the processing position.

Heat-treating units 41 are a plurality, are arranged vertically and horizontally, each facing the transporting space A _1. In this embodiment, three heat treatment units 41 can be arranged in the horizontal direction, and five heat treatment units 41 can be stacked in the vertical direction. Each heat treatment unit 41 includes a plate 43 on which the substrate W is placed. The heat treatment unit 41 includes a cooling unit CP for cooling the substrate W, a heating / cooling unit PHP for performing the heat treatment and the cooling treatment continuously, and heat treatment in a vapor atmosphere of hexamethylsilazane (HMDS) in order to improve the adhesion between the substrate W and the film. An adhesion processing unit AHL. The heating / cooling unit PHP has two plates 43 and a local transport mechanism (not shown) that moves the substrate W between the two plates 43. There are a plurality of various heat treatment units CP, PHP, and AHL, which are arranged at appropriate positions.

Please refer to FIG. FIG. 9 is a perspective view of the main transport mechanism. The main transport mechanism T ₁ has a fourth guide rail 52 for guiding the third guide rail 51 and the lateral two guiding in the vertical direction. Third guide rails 51 are fixed opposite each other at one side of the transporting space A _1. In this embodiment, it is arranged on the coating processing unit 31 side. The fourth guide rail 52 is slidably attached to the third guide rail 51. A base portion 53 is slidably provided on the fourth guide rail 52. The base 53 extends transversely, substantially to the center of the transporting space A _1. Further, a drive unit (not shown) that moves the fourth guide rail 52 in the vertical direction and moves the base unit 53 in the horizontal direction is provided. When the drive unit is driven, the base unit 53 is moved to each position of the coating processing unit 31 and the heat treatment unit 41 arranged vertically and horizontally.

The base 53 is provided with a turntable 55 that can rotate about the vertical axis Q. On the turntable 55, two holding arms 57a and 57b for holding the substrate W are provided so as to be movable in the horizontal direction. The two holding arms 57a and 57b are arranged at positions close to each other in the vertical direction. Further, a drive unit (not shown) that rotates the turntable 55 and moves the holding arms 57a and 57b is provided. When the driving unit is driven, the turntable 55 is opposed to the respective coating processing units 31, the respective heat treatment units 41, and the placement units PASS ₁ and PASS _2, and is held with respect to these coating processing units 31 and the like. The arms 57a and 57b are advanced and retracted.

[Third cell 13]
The third cell 13 will be described. In addition, about the same structure as the 1st cell 11, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. The layout of the main transport mechanism T ₃ and the processing unit in the third cell 13 in plan view is substantially the same as that of the first cell 11. For this reason, it can be said that the coating processing unit 31 is stacked in the vertical direction over the first cell 11 and the third cell 13. Similarly, it can be said that the heat treatment unit 41 is also laminated over each layer. Also, is substantially the same as the arrangement of the various treating units of the first cell 11 also arrangement of the various treating units of the third cell 13 as seen from the main transport mechanism T ₃ seen from the main transport mechanism T _1.

In the following, when the resist film coating processing units RESIST and the like provided in the first and third cells 11 and 13 are distinguished from each other, a subscript “1” or “3” is attached (for example, the first The resist film coating processing unit RESIST provided in the cell 11 is referred to as “resist film coating processing unit RESIST ₁ ”).

[First cell 11 and third cell 13]
The configuration related to the first cell 11 and the third cell 13 will be described together. The placement unit PASS ₁ is disposed between the ID unit 1 and the first cell 11. The placement unit PASS ₃ is disposed between the ID unit 1 and the third cell 13. In plan view, the placement portions PASS ₁ and PASS ₃ are disposed on the ID portion 1 side of the transport spaces A ₁ and A ₃ , respectively. In the cross-sectional view, the placement portion PASS ₁ is disposed at a height near the lower portion of the main transport mechanism T ₁ , and the placement portion PASS ₃ is disposed at a height near the upper portion of the main transport mechanism T ₃ . For this reason, the positions of the placement part PASS ₁ and the placement part PASS ₃ are close to each other, and the ID transport mechanism T _ID moves to the placement part PASS ₁ and the placement part PASS ₃ with a small ascending / descending amount. Can do.

There are a plurality (two) of the placement parts PASS ₁ and the placement parts PASS ₃ , which are arranged in two upper and lower stages. Of the two placement parts PASS ₁ , one placement part PASS _1A is for passing the substrate W from the _ID transport mechanism T _ID to the main transport mechanism T ₁ , and the placement part PASS _1A is exclusively ID. The substrate W is placed by the transport mechanism T _ID . The other mounting portion PASS _1B is for passing the substrate W from the main transport mechanism _{T 1} to the ID's transport mechanism _{T ID,} the substrate W is placed solely by the main transport mechanism _{T 1} on the placing portion PASS _1B . _Two mounting parts PASS ₂ , PASS ₄ , PASS ₅ , and PASS ₆ , which will be described later, are also provided in a similar manner, and are used for each delivery direction.

The placement unit PASS ₂ is provided between the first cell 11 and the second cell 12. The placement unit PASS ₄ is provided between the third cell 13 and the fourth cell 14. The placement units PASS ₂ and PASS ₄ are arranged at the same position in plan view. Above and below the placement units PASS ₂ and PASS ₄ , a buffer for temporarily placing the substrate W, a heat treatment unit for performing heat treatment on the substrate W, and the like (both not shown) are appropriately provided.

In the transport spaces A ₁ and A ₃ , a first blowing unit 61 that blows clean gas and a discharge unit 62 that sucks gas are provided. The first blowout unit 61 and exhaust unit 62 is a flat box having substantially the same area as the transporting space A ₁ in plan view. A first outlet 61 a and a discharge outlet 62 a are formed on one surface of the first outlet unit 61 and the discharge unit 62, respectively. In the present embodiment, the first air outlet 61a and the outlet 62a are constituted by a large number of small holes f. The first blow-out unit 61 is arranged in the upper part of the transport spaces A ₁ and A ₃ with the first blow-out opening 61a facing downward. Further, the discharge unit 62 is disposed below the transport spaces A ₁ and A _{3 with} the discharge port 62a facing upward. Atmosphere of the transporting space A ₁ and the transporting space A ₃ are blocked off by the exhaust unit 62 of the transporting space A ₁ and the first blowout unit 61 of the transporting space A _3. The 1st blower outlet 61a is corresponded to the gas supply port in this invention. The discharge port 62a corresponds to the gas discharge port in the present invention. The 1st blowing unit 61 is corresponded to the blowing unit of this invention.

The first blowing units 61 in the transfer spaces A ₁ and A ₃ are connected to the same first gas supply pipe 63 in communication. The first gas supply pipe 63 is provided at a lateral position of the placement parts PASS ₂ and PASS ₄ from the upper part of the transport space A _{1 to} the lower part of the transport space A ₃ and horizontally below the transport space A _2. Is bent. The other end of the first gas supply pipe 63 is connected to a gas supply source (not shown). Similarly, the discharge units 62 of the transfer spaces A ₁ and A ₃ are connected to the same first gas discharge pipe 64. The first gas discharge pipe 64 is provided at a lateral position of the placement parts PASS ₂ and PASS ₄ from the lower part of the transfer space A _{1 to} the lower part of the transfer space A ₃ , and in the horizontal direction below the transfer space A _2. Is bent. Then, by sucking / discharging gas from the discharge port 62a causes blown gas from the first outlet 61a of the transporting space A _1, A _3, flows from top to bottom in the transport space A _1, A ₃ An air flow is formed, and each of the transfer spaces A ₁ and A ₃ is individually kept clean.

  Each coating processing unit 31 of the first and third cells 11 and 13 is formed with a pit portion PS penetrating in the vertical direction. A second gas supply pipe 65 for supplying clean gas and a second gas discharge pipe 66 for exhausting gas are provided in the vertical hole PS in the vertical direction. Each of the second gas supply pipe 65 and the second gas discharge pipe 66 is branched at a predetermined height position of each coating processing unit 31 and drawn out in a substantially horizontal direction from the pothole portion PS. The plurality of branched second gas supply pipes 65 are connected to a second blowing unit 67 that blows gas downward. The plurality of branched second gas discharge pipes 66 are connected to the bottom of each cup 33, respectively. The other end of the second gas supply pipe 65 is connected in communication with the first gas supply pipe 63 below the third cell 13. The other end of the second gas exhaust pipe 66 is connected in communication with the first gas exhaust pipe 64 below the third cell 13. Then, while the gas is blown out from the second blowing unit 67 and the gas is discharged through the second gas discharge pipe 66, the atmosphere in each cup 33 is always kept clean, and the substrate held in the rotation holding unit 32. W can be processed suitably.

  In addition, piping and electric wiring (both not shown) through which the processing liquid is passed are installed in the hole portion PS. In this way, since the pipes and wirings attached to the coating processing units 31 of the first and third cells 11 and 13 can be accommodated in the hole part PS, the lengths of the pipes and wirings can be shortened. it can.

Further, the main transport mechanisms T ₁ and T ₃ and each processing unit included in the first cell 11 and the third cell 13 are accommodated in a single casing 75. Each structure of the 2nd cell 12 and the 4th cell 14 which are mentioned later is also accommodated in the separate housing | casing 75. FIG. In this manner, the processing unit 3 can be easily manufactured by providing a housing that collectively accommodates the main transport mechanism T and the processing unit for each processing block.

[Second cell 12]
The second cell 12 will be described. About the same structure as the 1st cell 11, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. Transporting space A ₂ of the second cell 12 is formed as an extension of the transporting space A _1.

The processing units of the second cell 12 are a development processing unit DEV that develops the substrate W, a heat treatment unit 42 that performs heat treatment on the substrate W, and an edge exposure unit EEW that exposes the peripheral edge of the substrate W. Developing units DEV are arranged at one side of the transporting space A _2, heat-treating units 42 and edge exposing unit EEW are arranged at the other side of the transporting space A _2. Here, the development processing unit DEV is preferably disposed on the same side as the coating processing unit 31. Further, it is preferable that the heat treatment unit 42 and the edge exposure unit EEW are aligned with the heat treatment unit 41.

Developing units DEV is four, which are arranged two horizontally along the transporting space A ₂ are stacked in upper and lower stages. Each development processing unit DEV includes a rotation holding unit 77 that holds the substrate W in a rotatable manner, and a cup 79 provided around the substrate W. Two development processing units DEV arranged side by side are provided without being partitioned by a partition wall or the like. Further, a supply unit 81 that supplies a developing solution to the two development processing units DEV is provided. The supply unit 81 has two slit nozzles 81a having slits or small hole arrays for discharging the developer. The length in the longitudinal direction of the slit or small hole array is preferably equivalent to the diameter of the substrate W. The two slit nozzles 81a are preferably configured to discharge different types or concentrations of developing solutions. The supply unit 81 further includes a moving mechanism 81b that moves each slit nozzle 81a. Thereby, each slit nozzle 81a is movable above the two rotation holding portions 77 arranged in the horizontal direction.

Heat-treating units 42 are a plurality, more aligned with are horizontally along the transporting space A _2, are stacked in a vertical direction. The heat treatment unit 42 includes a heating unit HP that heats the substrate W and a cooling unit CP that cools the substrate W.

  The edge exposure unit EEW is single and is provided at a predetermined position. The edge exposure unit EEW includes a rotation holding unit (not shown) that rotatably holds the substrate W, and a light irradiation unit (not shown) that exposes the periphery of the substrate W held by the rotation holding unit. .

A placement unit PASS ₅ and a heating / cooling unit PHP are stacked in one stroke facing the conveyance space A ₂ and adjacent to the IF unit 5. One side of the mounting portion PASS ₅ and the heating / cooling unit PHP is adjacent to the heat treatment unit 42 and is arranged in line with the heat treatment unit 42. The heating / cooling unit PHP is distinguished from the heat treatment unit 42 of the second cell 12 in that the _IF transport mechanism _TIF bears transport, but is the same as the second and fourth cells 12 and 14 in terms of layout. Housed in a housing 75. The heating / cooling unit PHP and the placement unit PASS ₅ are configured to be able to carry in and out the substrate W from the front side facing the transfer space A ₂ and the side surface facing the IF unit 5.

The main transport mechanism T ₂ is disposed substantially at the center of the transporting space A ₂ in plan view. The main transport mechanism T ₂ has the same structure as the main transport mechanism T _1. The main transport mechanism T ₂ transports the substrate W between the placement unit PASS ₂ , the various heat treatment units 42, the edge exposure unit EEW, and the placement unit PASS ₅ .

[Fourth reason block 14]
About the same structure as the 1st, 2nd cells 11 and 12, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol. The layout of the main transport mechanism T ₄ and the processing unit in the fourth cell 14 in plan view is substantially the same as that of the second cell 12. Also, is substantially the same as the arrangement of the various treating units of the second cell 12 as seen also arrangement of the various treating units of the fourth cell 14 as seen from the main transport mechanism T ₄ from the main transport mechanism T _2. Therefore, the development processing units DEV of the second cell 12 and the fourth cell 14 are stacked one above the other. Similarly, the heat treatment units 42 and the like of the second cell 12 and the fourth cell 14 are stacked one above the other.

[Second cell 12 and fourth cell 14]
The configuration related to the second cell 12 and the fourth cell 14 is also substantially the same as the configuration related to the first and third cells 11 and 13 and will be described briefly. The transport spaces A ₂ and A ₄ of the second and fourth cells 12 and 14 are also provided with configurations corresponding to the first blow-out unit 61 and the discharge unit 62, respectively. Further, the development processing units DEV of the second and fourth cells 12 and 14 are provided with configurations corresponding to the second blowing unit 67, the second gas exhaust pipe 66, and the like, respectively.

In the following, when distinguishing the development processing units DEV, edge exposure units EEW, and the like provided in the second and fourth cells 12 and 14, subscripts “2” or “4” are respectively attached (for example, The heating unit HP provided in the second cell 12 is described as “heating unit HP ₂ ”).

[IF unit 5 etc.]
The first transport mechanism T _IFA and the second transport mechanism T _IFB are provided side by side in a direction orthogonal to the direction in which the cells 11 and 12 (13, 14) are aligned. The first transport mechanism _TIFA is disposed on the side where the heat treatment units 42 of the second and fourth cells 12 and 14 are located. The second transport mechanism T _IFB is disposed on the side where the development processing units DEV of the second and fourth cells 12 and 14 are located. Between these first and second transport mechanisms T _IFA and T _IFB , a placement unit PASS-CP for placing and cooling the substrate W, a placement unit PASS ₇ for placing the substrate W, and the substrate W Buffers BF that are temporarily accommodated are stacked in multiple stages.

The first transport mechanism _TIFA includes a base 83 that is fixedly provided, a lifting shaft 85 that expands and contracts vertically upward with respect to the base 83, and is capable of turning with respect to the lifting shaft 85 and in a turning radius direction. And a holding arm 87 that holds the substrate W back and forth. Then, the substrate W is transported between the heating / cooling unit (PHP ₂ , PHP ₄ ), the placement unit (PASS ₅ , PASS ₆ , PASS-CP) and the buffer BF. The second transport mechanism T _IFB also includes a base 83, a lifting shaft 85, and a holding arm 87. Then, transports the substrate W between the mounting portion (PASS-CP, PASS ₇₎ and exposing machine EXP.

  Next, the control system of this apparatus will be described. FIG. 10 is a control block diagram of the substrate processing apparatus according to the embodiment. As shown, the apparatus includes a main controller 91 and first to sixth controllers 93, 94, 95, 96, 97, and 98.

The first controller 93 controls substrate transport by the _ID transport mechanism T _ID . The second controller 94 transports the substrate by the main transport mechanism T ₁ , resist film coating unit RESIST ₁ , antireflection film coating unit BARC ₁ , cooling unit CP ₁ , heating / cooling unit PHP _1, and adhesion processing unit AHL _1. Control the substrate processing at. The third controller 95 controls substrate transport by the main transport mechanism _{T 2,} and substrate treatment in the edge exposing unit EEW _2, developing units DEV _2, heating units HP ₂ and cooling units CP _2. The control of the fourth and fifth controllers 96 and 97 corresponds to the control of the second and third controllers 94 and 95, respectively. The sixth controller 98 controls substrate conveyance by the first and second conveyance mechanisms T _IFA and T _IFB and substrate processing in the heating and cooling units PHP ₂ and PHP ₄ . The above-described controls by the first to sixth controllers 93 to 98 are performed independently of each other.

The main controller 91 comprehensively controls the first to sixth controllers 93 to 98. Specifically, the main controller 91 controls the cooperation of the transport mechanisms. For example, the timing at which each transport mechanism accesses the placement units PASS _{1 to} PASS ₆ is adjusted. Further, the main controller 91 performs control so that the substrate W is transported to the exposure machine EXP in the same order as the order of unloading from the cassette C.

  Each of the main controller 91 and the first to sixth controllers 93 to 98 is a central processing unit (CPU) that executes various processes, a RAM (Random-Access Memory) that is a work area for arithmetic processing, It is realized by a storage medium such as a fixed disk for storing various information such as a processing recipe (processing program). The main controller 91 and the first to sixth controllers 93 to 98 correspond to the control means in this invention.

  Next, the operation of the substrate processing apparatus according to the embodiment will be described. FIG. 11 is a flowchart for performing a series of processes on the substrate W, and shows a processing unit or a placement unit on which the substrates W are sequentially transferred. FIG. 12 is a diagram schematically showing the operations that each transport mechanism repeatedly performs, and clearly shows the order of processing units, placement units, cassettes, and the like accessed by the transport mechanism. Below, it demonstrates for every conveyance mechanism.

[ID transport mechanism T _ID ]
The ID transport mechanism T _ID moves to a position facing the one cassette C, holds one unprocessed substrate W accommodated in the cassette C in the holding arm 25 and carries it out of the cassette C. The ID transport mechanism T _ID turns the holding arm 25 and moves the lifting shaft 23 up and down to move to a position facing the mounting portion PASS ₁ to place the held substrate W on the mounting portion PASS _1A ( This corresponds to step S1a in Fig. 8. Hereinafter, only the step numbers are appended. At this time, the substrate W is normally placed on the placement unit PASS _1B , and the substrate W is received and stored in the cassette C (step S23). When there is no substrate W in the placement unit PASS _1B , the cassette C is accessed as it is. And the board | substrate W accommodated in the cassette C is conveyed to mounting part PASS _3A (step S1b). Also here, if the substrate W is placed on the placement part PASS _3B , the substrate W is stored in the cassette C (step S23).

The ID transport mechanism T _ID repeatedly performs the above-described operation. This operation is controlled by the first controller 93. Accordingly, the substrates W carried out one by one from the cassette C are alternately transferred to the first cell 11 and the third cell 13.

[Main transport mechanisms T ₁ , T ₃ ]
Since the operation of the main transport mechanism T ₃ is substantially the same as operation of the main transport mechanism T _1, a description will be given only the main transport mechanism T _1. The main transport mechanism T ₁ moves to a position facing the placement unit PASS ₁ . At this time, the main transport mechanism _{T 1} holds the substrate W received from the portion PASS _2B placing just before the one holding arm 57 (e.g., 57 b). Substrate on which the main transport mechanism _{T 1} is placed on (step S22), and mounting the other holding arm 57 (e.g. 57a) portion PASS _1A with placing the portion PASS _1B mounting the wafer W held Hold W.

The main transport mechanism _{T 1} accesses a predetermined one of the cooling units CP _1. The cooling unit CP ₁ already has predetermined heat treatment (cooling) other substrate W has ended. With unloaded from the main transport mechanism T ₁ cooling unit CP ₁ holds the other substrate W in an empty (not holding the substrate W) holding arm 57, cooling the wafer W received from the mounting portion PASS _1A It carried into the unit CP _1. Then, the main transport mechanism T ₁ moves holding the cooled wafer W into the film coating units BARC _1. The cooling unit CP ₁ starts heat treatment (cooling) to the loaded wafer W (step S2). Incidentally, thereafter, the main transport mechanism T ₁ is to access the thermal processing unit 41 and the coating units 31 of various, the processing units (31, 41) and those already there is a substrate W having been subjected to the predetermined processing .

When the antireflection film coating unit BARC ₁ is accessed, the main transport mechanism T ₁ unloads the substrate W on which the antireflection film is formed from the antireflection film coating unit BARC ₁ and reflects the cooled substrate W. It is placed on the rotation holding unit 32 of the coating treatment unit BARC ₁ for the prevention film. Thereafter, the main transport mechanism T ₁ holds the substrate W on which the antireflection film is formed and moves to the heating / cooling unit PHP ₁ . The antireflection film coating processing unit BARC ₁ starts processing the substrate W placed on the rotation holding unit 32 (step S3).

  Specifically, the rotation holding unit 32 rotates the substrate W in a horizontal posture, holds one nozzle 35 by the holding unit 36, and moves the held nozzle 35 above the substrate W by driving the nozzle moving mechanism 37. Then, the processing liquid for the antireflection film is supplied from the nozzle 35 to the substrate W. The supplied processing liquid spreads over the entire surface of the substrate W and is discarded from the substrate W. The cup 33 collects the discarded processing liquid. In this way, the process of coating and forming the antireflection film on the substrate W is performed.

The main transport mechanism T ₁ accesses the the heating and cooling unit PHP _1, with unloading the wafer W having the heat treatment from the heating and cooling unit PHP _1, turning on the wafer W having antireflection film formed thereon into the heating and cooling unit PHP ₁ . Then, the main transport mechanism _{T 1} holds and moves the wafer W taken out of the heating and cooling unit PHP ₁ to the cooling unit CP _1. In the heating / cooling unit PHP ₁ , the substrates W are sequentially placed on the two plates 43, and after heating the substrate W on one plate 43, the substrate W is cooled on the other plate 43 (step S 4).

The main transport mechanism T ₁ moved to the cooling unit CP _1, with a wafer W out of the cooling unit CP _1, and loads the wafer W held in the cooling unit CP _1. The cooling unit CP ₁ cools the loaded wafer W (step S5).

Subsequently, the main transport mechanism T ₁ moves to the resist film coating unit RESIST ₁ . The main transport mechanism T 1 takes a wafer W having resist film formed from the resist film coating units RESIST _1, the substrate W held in the resist film coating units RESIST ₁ carries the substrate W. The resist film coating processing unit RESIST ₁ supplies the resist film material while rotating the loaded substrate W to form a resist film on the substrate W (step S6).

The main transport mechanism T ₁ further moves to the heating / cooling unit PHP ₁ and the cooling unit CP ₁ . Then, the wafer W having resist film formed thereon is carried into the heating and cooling unit PHP _1, transfers a wafer W to the cooling unit CP ₁ having undergone the processing in the heating and cooling unit portion PHP _1, the processing in the cooling unit CP ₁ The finished substrate W is received. The heating / cooling unit PHP ₁ and the cooling unit CP ₁ each perform a predetermined process on the unprocessed substrate W. (Steps S7 and S8).

The main transport mechanism T ₁ moves to the placement unit PASS ₂ to place the held substrate W on the placement unit PASS _2A (step S9), and the substrate W placed on the placement unit PASS _2B. Is received (step S21).

Thereafter, the main transport mechanism T ₁ accesses the placement unit PASS ₁ again and repeats the above-described operation. This operation is controlled by the second controller 94. As a result, when the substrate W placed on the placement unit PASS ₁ is received, the main transport mechanism T ₁ transports the substrate W to a predetermined processing unit (cooling unit CP ₁ in this embodiment) and this processing unit. Then, the processed substrate W is taken out. Subsequently, the substrate W is sequentially moved to a plurality of processing units, and the processed substrate W of each processing unit is transferred to another processing unit. Each processing unit (31, 41) starts a predetermined process each time a processed substrate W is replaced with an unprocessed substrate W. Therefore, the processing is performed on the plurality of substrates W in parallel by different processing units. However, the second controller 94 controls the schedule for transferring and processing the substrate W to the plurality of processing units (31, 41) to be uniform. Thus, since the series of processes will exit from the substrate W placed on the receiver PASS ₁ earlier in order, mounting portion substrate W in the order they are placed on the placing portion PASS ₁ is PASS ₂ To be paid out. Similarly, the main transport mechanism T ₁ places the substrate W on the placement unit PASS ₁ in the order received from the placement unit PASS ₂ .

[Main transport mechanisms T ₂ , T ₄ ]
Since the operation of the main transport mechanism T ₄ is substantially the same as the operation of the main transport mechanism T _2, a description will be given only the main transport mechanism T _2. The main transport mechanism _{T 2} moves to a position opposed to the receiver PASS _2. At this time, the main transport mechanism T ₂ holds a wafer W received from a cooling unit CP ₂ accessed immediately before. The main transport mechanism _{T 2} places the part PASS _2B mounting the wafer W held (step S21), and holds the substrate W placed on the placing portion PASS _2A (step S9).

The main transport mechanism _{T 2} accesses into the edge exposing unit EEW _2. Then, the substrate W that has been subjected to the predetermined processing in the edge exposure unit EEW ₂ is received, and the cooled substrate W is carried into the edge exposure unit EEW ₂ . The edge exposure unit EEW ₂ irradiates the peripheral edge of the substrate W from a light irradiation unit (not shown) while rotating the loaded substrate W. Thereby, the periphery of the substrate W is exposed (step S10).

The main transport mechanism T ₂ holds the substrate W received from the edge exposure unit EEW ₂ and accesses the placement unit PASS ₅ . Then, the substrate W held is placed on the placement unit PASS _5A (step S11), and the substrate W placed on the placement unit PASS _5B is held (step S16).

The main transport mechanism T ₂ moves to one of the cooling units CP _2, the wafer W held by replacing the substrate W in the cooling unit CP _2. The main transport mechanism T ₂ accesses the developing units DEV ₂ holds the wafer W having received cooling treatment. Cooling unit CP ₂ starts treatment of the newly loaded wafer W (step S17).

The main transport mechanism T ₂ takes a wafer W that has been developed from the developing unit DEV _2, and places the cooled wafer W on the spin holder 77 of the developing unit DEV _2. The development processing unit DEV ₂ develops the substrate W placed on the rotation holding unit 77 (step S18). Specifically, while the rotation holding unit 77 rotates the substrate W in a horizontal posture, the developing solution is supplied to the substrate W from any of the slit nozzles 81a to develop the substrate W.

The main transport mechanism T ₂ accesses one of the heating units HP ₂ holding the wafer W is developed. Then, the substrate W is unloaded from the heating unit HP ₂ and the substrate W to be held is put into the heating unit HP ₂ . Subsequently, the main transport mechanism T ₂ transports the substrate W unloaded from the heating unit HP ₂ to the cooling unit CP ₂ and takes out the substrate W that has already been processed in the cooling unit CP ₁ . Each of the heating unit HP ₂ and the cooling unit CP ₂ performs a predetermined process on the unprocessed substrate W (steps S19 and S20).

Thereafter, the main transport mechanism T ₂ accesses the placement unit PASS ₂ again and repeats the above-described operation. This operation is controlled by the third controller 95. Thereby, the substrate W is delivered to the placement unit PASS _5A in the order of placement on the placement unit PASS _2A . Similarly, the substrates W are discharged to the placement unit PASS _2B in the order in which the substrates W are placed on the placement unit PASS _5B .

[IF transport mechanism T _IF to first transport mechanism T _IFA ]
First transport mechanism _{T IFA} accesses the receiver PASS _5, and receives the substrate W placed on the placing part PASS _5A (step S11a). The first transport mechanism _TIFA holds the received substrate W, moves to the placement unit PASS-CP, and carries it into the placement unit PASS-CP (step S12).

Next, it receives the substrate W from the first transport mechanism _{T IFA} placing part PASS ₇ (step S14), and moves to a position opposed to the heating and cooling units PHP _2. The first transport mechanism _{T IFA} already heat treatment from the heating and cooling unit _{PHP 2 (PEB: Post Exposure Bake} ) takes out a wafer W having undergone, carries the wafer W received from the placing part PASS ₇ of the heating and cooling units PHP ₂ To do. The heating / cooling unit PHP ₂ heat-treats the unprocessed substrate W (step S15).

The first transport mechanism _TIFA transports the substrate W taken out from the heating / cooling unit PHP ₂ to the placement unit PASS _5B . Subsequently, the first transport mechanism _TIFA transports the substrate W placed on the placement unit PASS _6A to the placement unit PASS-CP (steps S11b and S12). Next, the first transport mechanism _TIFA is transported from the placement unit PASS ₇ to the heating / cooling unit PHP ₄ . At this time, the substrate W that has already been processed in the heating / cooling unit PHP ₄ is taken out and placed on the placement unit PASS _4B .

Thereafter, the first transport mechanism _TIFA accesses the placement unit PASS ₅ again and repeats the above-described operation. This operation is controlled by the sixth controller 98. In this manner, by alternately transferring from the placement units PASS ₅ and PASS ₆ to the placement unit PASS-CP, the substrates W are placed in the order in which the _ID transport mechanism T _ID is taken out from the cassette C. Place on CP.

However, the transport to the processing unit by the main transport mechanism T and the processing control of each processing unit are independent for each of the cells 11 to 14. That is, the timing of paying out to the placement unit PASS ₅ and the placement unit PASS ₆ is not adjusted. For this reason, due to obstacles such as substrate processing or conveyance delay, the order of payout to both the placement unit PASS ₅ and the placement unit PASS ₆ may not match the order of removal from the cassette C. In such a case, based on the control by the sixth controller 98, the first transport mechanism _TIFA is operated as follows.

When the substrate W is not paid out to either the placement part PASS _5A or the placement part PASS _6A , when the substrate W is placed on the other placement part, it is placed on the placement part. The transport destination of the substrate W is changed to the buffer BF instead of the placement unit PASS-CP. Then, when the substrate W starts to be placed again on the one placement unit that has been paid out, the substrate W is alternately placed on the placement unit PASS-CP from the restored one placement unit and the buffer BF. Transport. Thereby, even if the order of the timing of delivery to the placement part PASS ₅ and the placement part PASS ₆ is different from the order taken out from the cassette C, the order of the substrates W carried into the placement part PASS-CP Corresponds to the order of removal from the cassette C.

[IF transport mechanism T _IF to second transport mechanism T _IFB ]
The second transport mechanism T _IFB takes out the substrate W from the placement unit PASS-CP and transports it to the exposure apparatus EXP. Then, when the exposed substrate W delivered from the exposure machine EXP is received, it is transported to the placement unit PASS ₇ .

Thereafter, the second transport mechanism _TIFB accesses the placement unit PASS-CP again and repeats the above-described operation. This operation is also controlled by the sixth controller 98. Thus, since the first and second transport mechanisms T _IFA and T _IFB operate in cooperation, the substrates W are sent to the exposure apparatus EXP in the order of removal from the cassette C.

  As described above, according to the substrate processing apparatus according to the embodiment, each of the processing capabilities of the processing for forming the antireflection film and the resist film and the development processing is provided by providing the two substrate processing rows arranged vertically. Can be substantially doubled. Therefore, the throughput of the substrate processing apparatus can be greatly improved.

In addition, since the main transfer mechanisms T ₁ , T ₂ , T ₃ , and T ₄ are arranged in one row for each of the upper layer and the lower layer, an increase in the installation area of the substrate processing apparatus can be suppressed.

Since the arrangement of the main transport mechanisms T ₁ , T ₃ (T ₂ , T ₄ ) and the processing units in the upper and lower two substrate processing rows is substantially the same in plan view, the configuration of the apparatus can be simplified.

  In addition, the configuration of the apparatus can be simplified by making the processing units constituting the upper and lower two substrate processing rows the same type and making the series of processing performed in the upper and lower two substrate processing rows the same.

  Further, since the processing units of the upper and lower cells 11 and 13 (12, 14) are in a stacked relationship with each other, the structure of the processing block composed of the upper and lower two cells can be simplified.

  In addition, each processing block is provided with a casing 75 that collectively supports the upper and lower two main transport mechanisms T in the processing block and a plurality of processing units, so that the substrate processing apparatus can be efficiently manufactured and repaired easily. Can be done.

In addition, each transporting space A ₁ to A _4, since the discharge port 62a and the first blowout openings 61a are provided respectively, can be kept of each transporting space A clean.

  Further, since the first air outlet 61a is disposed at the upper part of the transport space A and the discharge port 62a is disposed at the lower part of the transport space A, a substantially vertical downward airflow is formed in the transport space A. Thereby, it is possible to prevent the temperature environment of the transport space A, the coating processing unit 31 or the development processing unit DEV from being affected by the heat from each heat treatment unit 41.

Further, the discharge unit 62 provided in the transfer space A ₁ (A ₂ ) and the first blow-out unit 61 provided in the transfer space A ₃ (A ₄ ) are provided in each of the transfer spaces A ₁ , A ₃ (A ₂ , A ₄ ). Since the atmosphere is shut off, each conveyance space A can be kept clean. In addition, since it is not necessary to provide a member that blocks the atmosphere exclusively, the apparatus configuration can be simplified.

By providing the first gas supply pipe 61 common to the first blow-out units 61 provided in the upper and lower transfer spaces A ₁ and A ₃ , the pipe installation space can be reduced and the apparatus configuration can be simplified. .

Further, it is provided with the part PASS _1, PASS ₃ for transferring wafers W between the transport mechanism _{T ID} and the main transport mechanism _T 1, _{T 3} for ID, transport mechanism _{T ID} and main transport ID transport efficiency mechanisms _T 1, _{T 3} can be prevented from decreasing. Similarly, the transfer of the substrate W between the transport mechanisms is also performed via the placement unit PASS, so that the transport efficiency of the transport mechanisms can be prevented from deteriorating.

In addition, since the positions of the placement part PASS ₁ and the placement part PASS ₃ are close to each other, the ID transport mechanism T _ID can access the placement part PASS ₁ and the placement part PASS ₃ with a smaller lifting amount. Can do.

  In addition, since the main controller 91 and the first to sixth controllers 93 to 98 are provided, the order in which the substrates W are taken out from the cassette C and the order in which they are loaded into the exposure machine EXP is controlled. Accordingly, each substrate W can be managed and tracked without being provided with a configuration for identifying the substrate W.

  By providing a common second gas supply pipe 65 for each coating processing unit 31 (each development processing unit DEV) provided in each of the upper and lower cells 11, 13 (12, 14), the piping installation space is reduced. The apparatus configuration can be simplified.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the embodiment described above, two substrate processing rows are configured, but the present invention is not limited to this. It may be modified so that three or more substrate processing rows are formed and provided in multiple stages.

  (2) In the above-described embodiment, each substrate processing column is configured by connecting two cells 11 and 12 (13 and 14), but is not limited thereto. Three or more cells may be connected to form a substrate processing row.

  (3) In the above-described embodiment, the substrate processing row performs a process of forming a resist film and an antireflection film on the substrate W and a process of developing the exposed substrate W. However, the present invention is not limited to this. . Other processing such as cleaning processing may be performed on the substrate W in the substrate processing row. As a result, the type and number of each processing unit are appropriately selected and designed. Further, the substrate processing apparatus may be configured by omitting the IF unit 5.

  (4) In the above-described embodiment, the series of processes performed in the two substrate processing rows are the same, but the present invention is not limited to this. You may change so that a different process may be performed in each board | substrate process sequence.

  (5) In the above-described embodiments, the planar layouts of the two substrate processing rows are substantially the same, but the present invention is not limited to this. You may change so that arrangement | positioning of the main conveyance mechanism T and a processing unit may differ for every board | substrate process row | line | column (namely, between upper and lower cells).

  (6) In the above-described embodiment, the arrangement of the processing units as viewed from the main transport mechanism T is the same between the upper and lower cells 11 and 13 (12, 14), but the upper and lower cells are not limited to this. You may change so that it may differ between.

  (7) In each of the above-described embodiments, the processing units are arranged on both sides of the transport space A in each of the cells 11 to 14, but the processing units may be arranged only on one side.

  (8) In the above-described embodiment, the transfer mechanism is configured to perform delivery via the placement unit PASS. However, the present invention is not limited to this. For example, you may change so that it may deliver directly.

(9) In the above-described embodiment, the buffer BF, the cooling unit CP, and the like may be arranged on the upper side and the lower side of the placement units PASS ₁ , PASS ₂ , PASS ₃ , and PASS ₄ . Thereby, the substrate W can be temporarily placed or cooled appropriately.

In (10) In the foregoing embodiment, transport mechanism _T IFA of 2 groups of IF's transport mechanisms _{T IF,} was constructed in _{T IFB,} without being limited thereto, constitute one group, or 3 groups or more transfer mechanisms It may be changed as follows.

  (11) In the above-described embodiment, there is no partition between the antireflection film coating unit BARC and the resist film coating unit RESIST, and the atmosphere communicates between the units. Not limited. You may comprise so that the atmosphere of both units may be interrupted | blocked suitably.

(12) In the above-described embodiment, one first blow-out unit 61 and one discharge unit 62 are configured to block the atmosphere of each of the transport spaces A ₁ , A ₃ (A ₂ , A ₄ ). Not limited. For example, only one of the first blowing unit 61 and the discharge unit 62 may be configured to block the atmosphere. Or you may comprise so that the discharge | emission unit 62 and the 1st blowing unit 61 may be equipped with the shielding board which interrupts | blocks the atmosphere of each conveyance space A which has a vertical relationship.

(13) In the above-described embodiment, the first blowing unit 61 is arranged at the upper part of each conveyance space A and the discharge unit 62 is arranged at the lower part. However, the present invention is not limited to this. You may comprise so that the 1st blowing unit 61 or the discharge unit 62 may be arrange | positioned in the side part of the conveyance space A. FIG. Further, the first blow-out unit 61 and the discharge unit 62 may be shared in the transfer spaces A ₁ and A ₂ (A ₃ and A ₄ ) in the same substrate processing row.

1 ... Indexer part (ID part)
3 ... Processing unit 5 ... Interface unit (IF unit)
DESCRIPTION OF SYMBOLS 11 ... 1st cell 12 ... 2nd cell 13 ... 3rd cell 14 ... 4th cell 31 ... Application | coating process unit 41 ... Heat processing unit 61 ... 1st blowing unit 61a ... 1st blower outlet 62 ... 2nd discharge | emission unit 62a ... Exhaust Outlet 65 ... Second gas supply pipe 66 ... Second gas discharge pipe 91 ... Main controllers 93 to 98 ... First to sixth controllers BARC ... Antireflection film coating processing unit RESIST ... Resist film coating processing unit DEV ... Development processing Unit EEW ... Edge exposure unit T _ID ... ID transport mechanism T ₁ , T ₂ , T ₃ , T ₄ ... Main transport mechanism T _IF ... IF transport mechanism PASS, PASS-CP ... Placement section BF ... Buffer A ₁ , A ₂ , A ₃ , A ₄ ... Conveying space EXP ... Exposure machine C ... Cassette W ... Substrate

Claims (14)

A substrate processing method for processing a substrate in a substrate processing apparatus including an indexer unit, a processing unit, and an interface unit,
The processing unit consists of two hierarchies arranged vertically,
Each level is
A processing unit for processing a substrate;
A main transport mechanism for transporting a substrate to a processing unit provided in the hierarchy;
With
Performing the process of forming a resist film on the substrate in the two layers in parallel;
A step of performing development processing on the substrate in parallel in the two layers;
In the indexer unit, a step of taking out the substrate from the cassette and alternately transporting it to each layer for performing a process of forming a resist film;
In the interface unit, receiving a substrate from each layer that performs a process of forming a resist film, and transporting it to an exposure machine that is an external device;
With
When the substrate is not discharged from the one layer to the interface unit from the one layer that performs the process of forming a resist film, when the substrate is discharged from the other layer to the interface unit, the interface unit is the other layer Transfer the substrate that has been paid out from the floor to the buffer,
When the substrate starts to be dispensed again from the level where the substrate dispensing has stopped, the interface unit alternately conveys the substrate dispensed from this level and the substrate placed on the buffer unit to the exposure unit. Substrate processing method. The substrate processing method according to claim 1,
A substrate processing method comprising a step of unloading a substrate from a cassette and transporting the substrate alternately to each layer for performing a process of forming a resist film in the indexer unit. In the substrate processing method of Claim 1 or Claim 2,
A substrate processing method comprising: a step of receiving a substrate alternately from each layer for performing development processing and storing it in a cassette in the indexer unit. In the substrate processing method in any one of Claims 1-3,
Both the step of performing the process of forming the resist film and the step of performing the development process are performed in each layer,
The method further includes unloading the substrate from the cassette in the indexer unit, alternately transporting the unloaded substrate to each level, and receiving the substrate from each level when the substrate is transported to each level, and receiving the received substrate. The substrate processing method provided with the process of accommodating in a cassette. In the substrate processing method in any one of Claims 1-4,
A substrate processing method comprising: a step of receiving a substrate alternately from each layer performing a process of forming a resist film in the interface unit and transporting the substrate to an exposure machine that is an external device. In the substrate processing method in any one of Claims 1-5,
A substrate processing method comprising: a step of receiving a substrate from an exposure apparatus as an external device and alternately transporting the substrate to each level where development processing is performed in the interface unit. In the substrate processing method in any one of Claims 1-6,
Both the step of performing the process of forming the resist film and the step of performing the development process are performed in each layer,
In the method, the interface unit further receives a substrate from each layer alternately and carries it out to an exposure device that is an external device, and receives the substrate from the exposure device and conveys the substrate alternately to each layer. A substrate processing method comprising a step of receiving a substrate from each level when the substrate is transferred to the substrate. In the substrate processing method in any one of Claims 1-7,
A substrate processing method for paying out a substrate to an interface unit in the order received from the indexer unit in each layer for performing a process of forming a resist film on the substrate. In the substrate processing method in any one of Claims 1-8,
A substrate processing method for delivering a substrate to an indexer unit in the order received from the interface unit in each layer where the development processing is performed on the substrate. In the substrate processing method in any one of Claims 1-9,
A substrate processing method in which the control of each layer for performing a process of forming a resist film on a substrate is independent of each other. In the substrate processing method in any one of Claims 1-10,
A substrate processing method in which the control of each layer for performing development processing on a substrate is independent of each other. In the substrate processing method in any one of Claims 1-11,
In the step of performing the process of forming the resist film in parallel, a series of processing steps including a process of applying a resist film material to the substrate and a process of performing a heat treatment on the substrate are sequentially performed on each substrate, and A substrate processing method for performing a series of processing steps for each substrate in a uniform period. In the substrate processing method in any one of Claims 1-12,
In the step of transporting to the exposure machine, a substrate processing method for transporting the substrate to the exposure machine in the same order as the order of taking out the substrate from the cassette. In the substrate processing method in any one of Claims 1-13,
When the order of the substrates received from the layer that performs the process of forming the resist film in the interface portion and the order of the substrates taken out from the cassette in the indexer portion are different, the substrate is placed on the buffer portion, and the interface The substrate processing method which makes it possible to receive a subsequent substrate from each level which performs the process which forms a resist film in a part.

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