JP3456925B2 - Substrate processing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to coating a substrate to be processed such as a semiconductor wafer or an LCD substrate with a resist,
The present invention relates to a substrate processing apparatus that performs processing such as development.

[0002]

2. Description of the Related Art As a coating and developing treatment system for manufacturing semiconductor devices and the like, for example, Japanese Patent Publication No. 2-3019.
Those disclosed in Japanese Patent Laid-Open No. 4 and Japanese Patent Laid-Open No. 9-266285 are known. These resist coating / developing systems apply a resist coating process for coating a resist solution, a heating process for curing a resist film by holding the substrate after the resist solution coating at a predetermined temperature atmosphere, and a predetermined temperature for the exposed substrate. It is provided with a plurality of processing units for carrying out processing such as heat processing for holding in an atmosphere and developing processing for supplying a developing solution to the exposed substrate for development.

Among these processing units, in a liquid processing unit such as a resist coating processing unit or a development processing unit, the atmosphere inside the unit containing solvent vapor generated during substrate processing is exhausted to a factory exhaust system through an exhaust pipe.

On the other hand, also in the heat treatment unit, the atmosphere inside the unit containing the solvent atmosphere at a high temperature generated during the substrate processing is exhausted to the factory exhaust system through the exhaust pipe provided separately from the exhaust pipe.

In such a resist coating and developing treatment system, the temperature of the substrate greatly affects the thickness and line width of the resist film formed on the surface of the resist coating and developing treatment system. Is done.

[0006]

In the above technique, an exhaust pipe for exhausting the atmosphere in the heat treatment unit may be arranged near the resist coating unit or the developing unit. In such a case, the exhaust pipe that exhausts the atmosphere in the heat treatment unit has a thermal effect on the resist coating unit and the developing unit, the processing temperature between the substrates is not constant, and the resist film between the substrates is not constant. There is a risk that the thickness and line width will become uneven, resulting in a reduction in product yield.

Further, since the exhaust pipe for exhausting the atmosphere in the liquid processing unit and the exhaust pipe for exhausting the atmosphere in the heat treatment unit are provided at random positions from the main body of the coating and developing processing system, when the coating and developing processing system is installed. However, there is a problem that the work, that is, the work of connecting these exhaust pipes to the exhaust means on the factory side requires a great deal of labor and time. Further, there is a problem in maintainability when a problem such as clogging occurs in these exhaust pipes.

The present invention has been made in view of the above circumstances, and it is possible to reduce the thermal influence of exhaust gas generated in a heat treatment unit on a liquid treatment unit such as a resist coating unit or a developing unit. An object of the present invention is to provide a substrate processing apparatus capable of preventing a change in processing characteristics in liquid processing and maintaining a high yield.

Further, according to the present invention, it is possible to improve workability in connecting the exhaust pipe for flowing the exhaust gas generated in the liquid processing unit and the exhaust pipe for flowing the exhaust gas generated in the heat treatment unit to the exhaust pipe on the factory side. It is an object of the present invention to provide a substrate processing apparatus that can perform maintenance and can be improved in maintainability.

[0010]

To solve the above problems, according to a first aspect of the present invention, a heat treatment unit for subjecting a substrate to a heat treatment, a liquid treatment unit for subjecting a substrate to a liquid treatment, and the heat treatment unit. And a substrate transfer unit for loading and unloading a substrate into and from the liquid processing unit, one end of which is connected to the heat treatment unit, a heat treatment unit system exhaust pipe for exhausting the inside of the heat treatment unit, and one end of which is connected to the liquid treatment unit. A liquid treatment unit system exhaust pipe for exhausting the inside of the liquid treatment unit, wherein the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are respectively positioned directly below the heat treatment unit and There is provided a substrate processing apparatus, which is arranged at any one of positions directly below the substrate transfer unit (claim 1).

According to this structure, the heat treatment unit system exhaust pipe becomes far from the liquid treatment unit, and the length of the liquid treatment unit system exhaust pipe becomes long, so that the heat treatment unit exhausts heat to the liquid treatment unit. It is possible to block the thermal influence. Therefore, it is possible to prevent a change in processing characteristics in the liquid processing and obtain a high product yield.

In this case, both the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are arranged directly below the heat treatment unit (claim 2). Since the heat treatment unit system exhaust pipe is disposed farthest from the liquid processing unit, it is possible to further block the thermal influence of the heat exhaust of the heat treatment unit on the liquid processing unit. Also, it becomes possible to combine the locations where the heat treatment unit system exhaust pipe and the liquid processing unit system exhaust pipe are discharged from the substrate processing apparatus into one, and work to connect each exhaust pipe to each exhaust pipe on the factory side. It is possible to improve the maintainability and also improve the maintainability when a problem occurs in the exhaust pipe.

If the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are both arranged directly below the substrate transfer unit (claim 3), Since the heat treatment unit system exhaust pipe extends almost directly below and the thermal influence on the heat treatment unit system exhaust pipe itself is reduced, it is possible to block the thermal influence from the heat treatment unit system exhaust pipe to the liquid processing unit. Further, it is possible to combine the locations where the heat treatment unit system exhaust pipe and the liquid processing unit system exhaust pipe are discharged from the substrate processing apparatus into one.

Further, a casing for accommodating the heat treatment unit, the substrate transfer unit, and the liquid processing unit is further provided, and the casing has a ceiling portion thereof with the heat treatment unit, the substrate transfer unit, and the liquid processing unit. The unit has a gas supply unit for supplying gas, and the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are arranged near the bottom of the unit, and the heat treatment unit is also provided. The substrate transfer unit and the liquid processing unit may be provided with an opening for discharging the downflow (claim 4). With such a configuration, the downflow gas flows between the liquid processing unit system exhaust pipe and the heat treatment unit system exhaust pipe, and the downflow gas acts as an air curtain for the heat of the heat treatment system exhaust pipe. In order to
It is possible to block the thermal influence from the heat treatment unit system exhaust pipe on the liquid treatment unit. Also, the temperature of the heat treatment unit system exhaust pipe can be lowered by the downflow gas.

According to a second aspect of the present invention, a heat treatment unit for subjecting a substrate to heat treatment, a liquid treatment unit for subjecting a substrate to a liquid treatment, and a heat treatment unit arranged between the heat treatment unit and the liquid treatment unit are provided. A first substrate transfer unit for loading and unloading a substrate, and a second substrate transfer unit for loading and unloading the substrate to and from the heat processing unit, the second substrate transfer unit being provided at a position facing the first substrate transfer unit with the thermal processing unit interposed therebetween. And a heat treatment unit system exhaust pipe having one end connected to the heat treatment unit and exhausting the inside of the heat treatment unit, and a liquid treatment unit system exhaust having one end connected to the liquid treatment unit and exhausting the inside of the liquid treatment unit A pipe, and the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are respectively placed directly below the heat treatment unit. The first substrate transfer unit, and the second substrate processing apparatus, characterized in that arranged in one of a position immediately below the substrate transfer unit is provided (claim 5).

According to this structure, as in the first aspect, the heat treatment unit system exhaust pipe becomes far from the liquid treatment unit, and the length of the liquid treatment unit system exhaust pipe becomes long. It is possible to block the thermal influence of the exhaust gas on the liquid processing unit. Therefore, it is possible to prevent a change in processing characteristics in the liquid processing and obtain a high product yield.

In this case, if the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are both arranged directly below the first substrate transfer unit (claim) 6) Since the heat treatment unit system exhaust pipe is arranged farthest from the liquid processing unit, it is possible to block the thermal influence of the heat exhaust of the heat treatment unit on the liquid processing unit. Further, it is possible to combine the locations where the heat treatment unit system exhaust pipe and the liquid processing unit system exhaust pipe are discharged from the substrate processing apparatus into one.

When the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are both arranged directly below the heat treatment unit (claim 7), the heat treatment unit system Since the exhaust pipe extends almost directly below and the thermal influence on the heat treatment unit system exhaust pipe itself is reduced, it is possible to block the thermal influence from the heat treatment unit system exhaust pipe on the liquid processing unit. Further, it is possible to combine the locations where the heat treatment unit system exhaust pipe and the liquid processing unit system exhaust pipe are discharged from the substrate processing apparatus into one.

Furthermore, a casing for accommodating the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit is further provided, and the casing has the heat treatment unit on a ceiling portion thereof. A gas supply part for supplying gas to the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit, and the other end of the heat treatment unit system exhaust pipe near the bottom thereof. And the other end of the liquid processing unit system exhaust pipe are arranged, and the downflow supplied to the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit is disposed. It may be configured to have an opening for discharging (claim 8). With such a configuration, the downflow gas flows between the liquid processing unit system exhaust pipe and the heat treatment unit system exhaust pipe, and the downflow gas acts as an air curtain for the heat of the heat treatment system exhaust pipe. Therefore, it is possible to block the thermal influence from the heat treatment unit system exhaust pipe on the liquid treatment unit. Also, the temperature of the heat treatment unit system exhaust pipe can be lowered by the downflow gas.

According to a third aspect of the present invention, a heat treatment unit for subjecting a substrate to heat treatment, a liquid treatment unit for subjecting a substrate to liquid treatment, and a heat treatment unit arranged between the heat treatment unit and the liquid treatment unit are provided. A first substrate transfer unit for unloading the substrate to and from the first heat treatment unit
Second substrate transfer unit that is provided at a position facing the substrate transfer unit for loading a substrate into the heat treatment unit, and a heat treatment unit system exhaust pipe that has one end connected to the heat treatment unit and exhausts the inside of the heat treatment unit. When,
A liquid processing unit system exhaust pipe that has one end connected to the liquid processing unit and exhausts the inside of the liquid processing unit, and the other end of the thermal processing unit system exhaust pipe is located directly below the thermal processing unit or the second Substrate processing unit, and the other end of the liquid processing unit system exhaust pipe is arranged directly below the liquid processing unit or directly below the first substrate transfer unit. A device is provided (claim 9).

According to this structure, since the heat treatment unit system exhaust pipe is located far from the liquid treatment unit, it is possible to block the thermal influence of the heat treatment unit system exhaust pipe on the liquid treatment unit. Further, since the liquid treatment unit system exhaust pipe and the heat treatment unit system exhaust pipe are arranged separately,
There is no thermal influence from the heat treatment unit system exhaust pipe to the liquid treatment unit system exhaust pipe.

In this case, the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit,
And a casing accommodating the liquid processing unit, and a height equal to that of the heat treatment system exhaust pipe, which is erected from the bottom of the casing, and separates the heat treatment unit lower space and the first substrate transfer unit lower space. Further comprising a partition plate, the casing has a ceiling portion,
The heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and a gas supply unit for supplying a gas to the liquid processing unit, the other end of the heat treatment unit system exhaust pipe near the bottom thereof Has a first opening for discharging the downflow supplied to the heat treatment unit and the second substrate transfer unit,
In addition, a configuration in which a second opening for discharging downflow supplied to the first substrate transfer unit and the liquid processing unit is provided in a portion where the other end of the liquid processing unit meter exhaust pipe is arranged in the vicinity of the bottom portion thereof. (Claim 1
0). According to this structure, the space below the heat treatment unit and the space below the first substrate transfer unit are separated by the partition plate, so that the liquid treatment unit system exhaust from the downflow gas warmed by the heat treatment unit system exhaust pipe. It is possible to very effectively block the thermal influence on the tube.

In the first to third aspects of the present invention, at the other end of the heat treatment unit system exhaust pipe and at the other end of the liquid treatment unit system exhaust pipe, these are collectively attached to another exhaust pipe. It is also possible to provide a connecting means for connecting each (claim 11). According to such a configuration, each exhaust pipe can be smoothly connected to another exhaust pipe, for example, a factory-side exhaust pipe, so that workability is improved and a problem occurs in the exhaust pipe. It is also possible to improve the maintainability of.

Further, in the first to third aspects of the present invention, exhaust control means for controlling the flow rate of exhaust flowing through the heat treatment unit system exhaust pipe and the liquid processing unit system exhaust pipe are further provided. It is also possible (claim 12). With such a configuration, the flow rate of each exhaust gas can be smoothly controlled. In this case, since the parts for controlling the exhaust amount of each exhaust pipe of the exhaust control means are arranged together, the workability of adjusting the exhaust amount is also improved.

[0025]

DETAILED DESCRIPTION OF THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 and 2 show the overall structure of a semiconductor wafer (hereinafter referred to as "wafer") resist coating and developing treatment system 1 according to an embodiment of the present invention. FIG. 1 is a schematic perspective view thereof, and FIG. It is a schematic plan view.

The resist coating / developing system 1 of this embodiment is a wafer cassette CR capable of accommodating a plurality of wafers W.
A cassette station 10 for loading / unloading a wafer W into / out of the wafer cassette CR by a transfer system outside the apparatus, and 1 for the wafer W.
A processing station 11 configured by arranging various single-wafer processing units for performing a predetermined processing one by one, and an interface unit (not shown) for transferring a wafer W to and from an external exposure apparatus are integrated. It is composed by combining.

As shown in FIG. 2, the cassette station 10 has a cassette mounting table 26 on which a plurality of (for example, four) wafer cassettes CR are arranged in a line with the wafer entrances and exits facing the processing station 11 side. It can be placed. Further, in the cassette station 10, a wafer transfer device 21 is provided between the cassette mounting table 26 and the processing station 11. The wafer transfer device 21 is movable in the X direction, and Z The wafer holding member 21a is configured to be movable in the direction (vertical direction), the front-rear direction, and rotatable in the θ direction. Then, the wafer cassette CR placed on the cassette placing table 26 by the wafer delivery device 21.
With respect to the wafer W, the wafer W is loaded and unloaded. The wafer transfer device 21 is a first wafer transfer device 23, which will be described later, provided in the processing station 11.
It is also possible to transfer the wafer to and from.

In the processing station 11, a first transfer unit 31 and a second transfer unit 32, which are provided independently of each other, and various processing unit groups are arranged. A first wafer transfer device 22 for loading / unloading the wafer W to / from various processing units is provided in the first transfer unit 31, and the first wafer transfer device 22 is arranged in the Y direction. It can move freely along with Z
The wafer holding member 22a is configured to be movable in the direction (vertical direction), the front-rear direction, and rotatable in the θ direction. Further, in the second transfer unit 32, a second wafer transfer device 23 for loading / unloading the wafer W to / from various processing units is provided, and the second wafer transfer device 23 is also the same. A wafer holding member 2 configured to be movable in the Y direction, movable in the Z direction (vertical direction), in the front-rear direction, and rotatable in the θ direction.
3a.

The processing station 11 has a casing 2 for accommodating a first transfer unit 31, a second transfer unit 32, a spinner type processing unit group and an open type processing unit group which will be described later. However, the casing 2 is formed integrally with the outer wall of each unit.

The processing unit used in the present embodiment is a spinner type processing unit (liquid processing) in which a wafer W is placed on a spinner chuck (not shown) in a cup CP and rotated to perform a predetermined processing using a processing liquid. Processing unit) and the wafer W
Is roughly divided into an oven-type processing unit (heat treatment unit) for carrying out predetermined processing by mounting it on a mounting table (not shown),
The spinner type processing unit group 34 and the oven type processing unit group 33 are divided into two parts on both sides of the first transport unit 31 with the first transport unit 31 interposed therebetween. The first transfer unit 31 and the second transfer unit 32 are separated from each other by the oven type processing unit group 33.

The arrangement of these processing units will be described in more detail. As shown in FIGS. 1 and 2, the resist coating unit 8 and the developing unit 9 constituting the spinner type processing unit group 34 are the first transport unit. Three
They are juxtaposed facing each other.

Further, an oven type processing unit group 33
Is the first group 3 in which the processing units are stacked in four stages.
3a, the second group 33b, and the third group 33c are arranged side by side. The first group 33a on the cassette station 10 side
Between the adhesion unit 12, the first transfer unit 31 and the second transfer unit 32 that perform a hydrophobic treatment for increasing the fixability of the resist liquid applied to the surface of the wafer W in order from the bottom. An extension unit 15 for delivering the wafer W, an alignment unit 13 for aligning the wafer W, and two heat processing units 14 for heating the wafer W are stacked and configured, and are formed by a second group 33b and a second group 33b. Each of the third group 33c includes two heat processing units 14 for heating the wafer W,
Also, two cooling processing units 16 for cooling the same are stacked.

In the resist coating unit 8 and the developing unit 9 which are spinner type processing units, the wafer W is subjected to predetermined processing using the processing liquid in the cup CP as described above. As shown in FIG. 3, at the bottoms of the cups CP of the resist coating unit 8 and the developing unit 9, respectively, a waste liquid pipe 38 for flowing the treated liquid to a waste liquid tank (not shown) is provided downward. ing.
Further, each cup CP is provided with an exhaust port 39 for exhausting the air or atmosphere in the cup, and as described later, exhaust for exhausting the atmosphere in the resist coating unit 8 to each exhaust port 39. A pipe 43 and an exhaust pipe 44 for exhausting the atmosphere in the developing unit 9 are connected.

As shown in FIG. 3, each processing unit is provided with an opening 41 for loading / unloading the wafer W, and these openings 41 are individually provided by a shutter 42 driven by a driving means (not shown). It is opened and closed. Therefore, the first transport unit 31 and the second transport unit 3
The extension unit 15 used to transfer the wafer W to and from the wafer 2 is provided with an opening 41 and an opening / closing shutter 42 thereof on both surfaces facing the transfer units 31 and 32.

Air supply chambers 11a1 and 11a2 are provided above the processing station 11, and filters 11b1 and 11b2 are attached to the lower portions of the air supply chambers. As shown in FIG. 1, a large number of ventilation holes 36 are provided in the ceiling plate 35 of each air supply chamber 11a1, 11a2.
A shape having a shape such as punching metal is used. The air in the clean room is introduced into the air supply chambers 11a1 and 11a2 from the ventilation holes 36 and further purified by the filters 11b1 and 11b2. This air is supplied into the processing station 11.

In this embodiment, the air supply chambers 11a1 and 11a2 and the filters 11b1 and 11b2 are provided above the processing station 11. However, the present invention is not limited to this, and the air supply chambers 11a1 and 11a2 and the filters 11b1 and 11b2 are provided. As a configuration not provided, the air may be directly supplied into the air treatment station in the clean room.

As shown in FIG. 3, the processing station 11
The downflow air supplied to the inside of each carrier 22,2.
3 through a plurality of ventilation holes 40 provided in the isolation plate 37 at the lower part of the moving path, and the gas is collected in the exhaust opening 46 at the bottom of the casing 2. From the exhaust opening 46, the processing station 1
1 is discharged to the outside. Note that the exhaust opening 46 may have a configuration in which the size of the opening can be changed so that the atmosphere inside the processing station 11 can be adjusted.

Further, in the resist coating / developing system 1 of the present embodiment, as shown in FIG.
An exhaust pipe 43 for exhausting the internal atmosphere, an exhaust pipe 44 for exhausting the internal atmosphere of the developing unit 9, an adhesion unit 12
Further, a collective exhaust pipe 45 for exhausting the atmosphere in the heat treatment unit 14 is connected to each inner connector 51 of the exhaust pipe connection panel 50 provided at the bottom of the casing 2. Further, there is an outer connecting connector 52 on the back side of the surface on which the inner connecting connector 51 is attached to the exhaust pipe connecting panel 50, for exhausting the above respective atmospheres to the respective factory exhaust systems (not shown). Exhaust pipes are connected respectively. Further, a damper 55 is attached to the outer connector 52 as an exhaust amount adjusting mechanism for controlling the exhaust amount of each. This damper 55
May be manually operated by the operator,
It may be automatically adjusted by a control system (not shown) so as to have a preset displacement amount.

The exhaust opening 46 for discharging the downflow air to the outside of the processing station 11 may be provided in the exhaust pipe connection panel 50 as shown in FIG. Further, the exhaust pipe connection panel 50 is arranged parallel to the installation surface of the coating and developing treatment system 1 as in the present embodiment, and is also arranged below the side surface of the resist coating and developing treatment system 1 and perpendicular to the installation surface of the system 1. May be.

In the adhesion unit 12 and the plurality of heat processing units 14, since the wafer W is processed at a high temperature, a high temperature gas is generated. Since the collective exhaust pipe 45 for exhausting the high-temperature gas, that is, the thermal exhaust pipe is one of the heat sources, the other units, particularly the resist coating processing unit 8 which is a liquid processing unit and the development processing, are affected by the heat. It is necessary to arrange it in a position that does not reach the unit 9. From this point, the thermal exhaust pipe is the resist liquid,
The resist coating unit 8 and the developing unit 9 are located at a position as far as possible from the area where the chemical liquid such as the developing liquid is stored.
It is desirable to arrange the liquid treatment system unit at a position avoiding the lower side of the liquid treatment system unit.

From this point of view, in the present embodiment, the second substrate transfer unit farthest from the liquid processing unit is located at a position excluding the lower part of the liquid processing system unit such as the resist coating unit 8 and the developing unit 9. A position directly under 32 is selected, and a heat system exhaust pipe is arranged there, so that the thermal influence of the heat system exhaust pipe does not reach the liquid processing unit.

The exhaust pipe is not limited to a pipe-shaped one, and any exhaust pipe may be used as long as it forms a flow path for guiding the atmosphere in the heat treatment unit and the atmosphere in the liquid treatment unit in a certain direction.

Next, the flow of processing by this coating and developing system will be described. First, in the cassette station 10, one wafer W is taken out from the cassette station CR which contains the unprocessed wafer W on the cassette mounting table 26 by the wafer transfer device 21, and then the second wafer of the processing station 11 is taken out. The wafer W is delivered to the holding member 23 a of the second wafer transfer device 23 provided in the transfer unit 32. Further, the wafer W is loaded into the alignment unit 13 by the second wafer transfer device 23.

When the alignment unit 13 completes the orientation flat alignment and centering of the wafer W, the wafer W is received by the holding member 23a of the second wafer transfer device 23, and subsequently carried into the adhesion unit 12, where Then, the hydrophobic treatment of the wafer W is performed. During the hydrophobic treatment, the wafer W is heated in the adhesion unit 12 to a high temperature, for example, 90 ° C. The adhesion unit 12 is provided with an exhaust port (not shown) for preventing heat in the unit from being transferred to the outside of the unit,
The heat exhaust in the unit is exhausted to the collective exhaust pipe 45 via the exhaust port.

In the hydrophobic treatment of the wafer W in the adhesion unit 12, a solvent atmosphere such as HMD is used.
Although the S atmosphere is used, the surplus HM remaining in the adhesion unit 12 after the hydrophobic treatment of the wafer W is completed.
In order to prevent the DS atmosphere from flowing out of the unit, the excess HMDS atmosphere is exhausted to the collective exhaust pipe 45 via the exhaust port. In this example, since the concentration of the HMDS atmosphere used is very low, HMDS
Although the exhaust path for the atmosphere and the exhaust path for the thermal exhaust are the same, another exhaust path may be provided so that only the HMDS atmosphere can be exhausted.

The wafer W which has been subjected to the hydrophobic treatment is subsequently carried into the predetermined one of the plurality of heat treatment units 14 by the second wafer transfer device 23 and heated, and thereafter,
It is carried into a predetermined one of the plurality of cooling processing units 16 and cooled. In this cooling processing unit, the wafer W
Is cooled to a set temperature before the resist coating process, for example, 23 ° C. The heat treatment unit 14 and the cooling treatment unit 16 are provided with an exhaust port (not shown) for preventing heat in the unit from being transferred to the outside of the unit, and the heat exhaust generated in each unit is It is exhausted to the collective exhaust pipe 45 via the exhaust port.

When the cooling processing of the wafer W is completed, the wafer W is taken out from the cooling processing unit 16 by the second wafer transfer device 23 and carried into the extension unit 15. Then, the shutter 42 that opens and closes the opening 41 of the extension unit 15 facing the first transport unit 31 is opened, and the extension unit 15 is opened.
The wafer W placed inside is unloaded by the first transfer device 22, and the shutter 42 is closed.

The respective shutters 42 for opening and closing both the openings 41 of the extension unit 15 are, for example, the atmospheric pressure in the first carrying unit 31 and the second carrying unit 3.
It can be eliminated by using other means capable of preventing foreign matter such as particles from entering from the second transport unit 32 to the first transport unit 31, such as by making the atmosphere pressure inside 2 higher. is there.

After that, the wafer W is transferred to the resist coating processing unit 8 by the first wafer transfer device 22. In the resist coating processing unit 8, resist coating on the surface of the wafer W is performed. During the resist coating process, the film thickness of the resist formed on the surface of the wafer W is influenced by the atmosphere in the cup CP, and thus the exhaust control is performed from the exhaust port 39 provided at the bottom of the cup CP as described above. Further, since the gas is exhausted from the exhaust port 39 not only during the processing of the wafer W but also during the processing, the cup C
The mist-containing atmosphere generated in P is discharged outside the cup CP without remaining in the cup CP.

When the resist coating process is completed, the wafer W
Are taken out of the resist coating processing unit 8 by the first wafer transfer device 22 and carried into the extension unit 15 again. Thereafter, the wafer W is transferred to the extension unit 15 by the second wafer transfer device 23.
It is carried out from the inside, then carried into a predetermined heat treatment unit among the plurality of heat treatment units 14, and subjected to heat treatment (prebaking) at a predetermined temperature, for example, 100 ° C. for a predetermined time. After that, the wafer W is loaded into a predetermined cooling unit of the plurality of cooling processing units 16 and cooled to a predetermined temperature, for example, 23 ° C.

By heating (pre-baking) the wafer W on which the resist coating process has been performed in this way, a part of the solvent such as the resist coated on the wafer W is evaporated, so that the solvent atmosphere in the unit is exhausted. There is a need to.
For this reason, as described above, the heat treatment unit and the cooling treatment unit are provided with an exhaust port (not shown) for preventing heat in the unit from being transferred to the outside of the unit, which is generated in each unit. The exhaust of the heat and solvent atmosphere is exhausted to the collective exhaust pipe 45 via the exhaust port.

After that, the wafer W is carried into the interface section (not shown) provided on the opposite side of the cassette station 10 by the second wafer transfer device 23, subjected to the peripheral exposure process, and then coated. An overall pattern exposure process is performed by an exposure device (not shown) adjacent to the development processing system 1. The wafer W for which the exposure process has been completed is transferred to the holding member 23a of the second wafer transfer device 23 via the interface section.

After that, the wafer W is carried into the predetermined one of the plurality of heat treatment units 14 by the second wafer transfer device 23, and subjected to heat treatment (post exposure bake) at a predetermined temperature, for example, 100 ° C. for a predetermined time. It Then, the wafer W is loaded into a predetermined one of the plurality of cooling processing units 16 by the second wafer transfer device 23 and returned to room temperature, for example, 23 ° C. As described above, the heat treatment unit 14 and the cooling treatment unit 16 are provided with an exhaust port (not shown) for preventing the heat inside the unit from being transferred to the outside of the unit, and the heat generated in each unit. The exhaust gas is exhausted to the collective exhaust pipe 45 via the exhaust port.

Subsequently, the wafer W is carried into the extension unit 15 by the second wafer carrying device 23, and then carried from the extension unit to the development processing unit 9 by the first wafer carrying device 22. In the developing processing unit 9, the developing solution is uniformly deposited on the resist on the surface of the wafer W and left standing for a predetermined time to perform the developing process. After the development processing, the rinse liquid is supplied to the surface of the wafer W and the developer is washed off. While the predetermined processing is performed on the wafer W in the development processing unit 9, the line width of the exposure pattern on the surface of the wafer W is influenced by the atmosphere in the cup CP, and thus the wafer W is provided at the bottom of the cup CP as described above. Exhaust control is performed from the exhaust port 39. Further, from the exhaust port 39, the wafer W
Since the gas is exhausted not only during the processing but also during the processing other than the processing, the mist-containing atmosphere generated in the cup CP is discharged outside the cup CP without remaining in the cup CP.

The wafer W which has undergone the predetermined processing in the developing processing unit 9 is carried out by the first wafer carrying device 22 and carried into the extension unit 15. Then, the wafer W in the extension unit 15 is loaded into a predetermined one of the plurality of heat treatment units 14 by the second wafer transfer device 23, and heated there at a predetermined temperature, for example, 100 ° C. for a predetermined time (post-baking). After that, it is carried into a predetermined one of the plurality of cooling processing units 16 and returned to room temperature, for example, 23 ° C.

The wafer W thus developed
Wafer (W) by heating (post-baking)
Since a part of the solvent such as the developing solution remaining in the unit is evaporated, it is necessary to exhaust the solvent atmosphere in the unit. For this reason,
As described above, the heat treatment unit and the cooling treatment unit are provided with an exhaust port (not shown) for preventing heat in the unit from being transferred to the outside of the unit, and heat and solvent generated in each unit. The exhaust of the atmosphere is
It is exhausted to the collective exhaust pipe 45 via the exhaust port.

The wafer W that has undergone a series of processes in the processing station 11 as described above is transferred to the holding member 21a of the wafer transfer device 21 on the cassette station side 10 and the processed wafer on the cassette mounting table 26 is processed. It is accommodated in the accommodating cassette CR.

As described above, in the coating phenomenon processing system 1 of this embodiment, the wafer W between the cassette station 10 and the interface section (not shown) for the exposure apparatus is provided.
The second transfer unit 3 for transferring the wafer W and loading / unloading the wafer W to / from the oven type processing unit group 33.
2 and the first transfer unit 3 for loading / unloading the wafer W to / from the resist coating unit 8 and the developing unit 9.
1 and 1 are separated from each other, and the wafer W is transferred between the first transfer unit 31 and the second transfer unit 32 through the extension unit 15 in the oven-type processing unit group 33. It is composed of.

Therefore, the hermeticity of the first transfer unit 31 is improved, and the first transfer unit 3 from the interface section for the cassette station 10 and the exposure apparatus is improved.
It is possible to reduce or prevent the intrusion of foreign matter such as dust into the inside of the wafer 1, and effectively suppress the reduction of the yield due to the foreign matter adhering to the surface of the wafer W at the time of resist coating or development, or immediately before or immediately after that. It becomes possible to do.

Further, in the liquid processing units such as the resist coating processing unit 8 and the development processing unit 9, the influence of the temperature change on the processing is large and the temperature is strictly controlled.
In particular, in the resist coating processing unit 8, if the wafer temperature fluctuates even by a slight amount under the influence of external heat,
There is a possibility that the thickness and line width of the resist film formed on the wafer surface may vary, and there is a concern that the heat from the thermal system exhaust pipe may affect the resist coating processing unit 8 and the developing processing. Since the thermal exhaust pipe is arranged at a position other than the position directly below the unit 9 and directly below the second substrate transfer unit 32, it is possible to minimize the influence of heat from such a thermal exhaust pipe. it can. That is, by arranging the thermal system exhaust pipe immediately below the second substrate transfer unit 32, the thermal system exhaust pipe is arranged farthest from the liquid processing system unit, and the liquid processing unit system exhaust is also provided. It is possible to prevent the temperature of the liquid processing unit system exhaust pipe warmed by the thermal system exhaust pipe due to the lengthening of the pipe from being transmitted to the liquid processing unit.
Since it is also possible to lower the temperature of the thermal system exhaust pipe by the downflow gas, it is possible to minimize the thermal influence of the thermal system exhaust pipe on the liquid processing unit. Therefore, in the resist coating process and the developing process, the thickness and line width of the resist film formed on the wafer surface can be maintained uniform, and a high product yield can be obtained.

Further, in the present embodiment, as described above, the collective exhaust pipe 45 for exhausting the atmosphere in the heat treatment unit.
An exhaust pipe 43 for exhausting the internal atmosphere of the resist coating unit 8 and an exhaust pipe 44 for exhausting the internal atmosphere of the developing unit 9 are attached to the exhaust opening 46 below the second substrate transfer unit 32. It is connected to the exhaust gas discharge pipe 50. In this way, the coating and developing system 1 is provided by putting the positions of the respective exhaust pipes in one place.
It is possible to greatly reduce the time required for the work at the time of installation, that is, the work for connecting these exhaust pipes to the exhaust means on the factory side. Further, regarding maintenance when a problem such as clogging occurs in these exhaust pipes, the connector 51 for inner connection or the connector 52 for outer connection is also provided.
It can be easily performed by removing.

Incidentally, the position of the thermal system exhaust pipe may be a position directly below the heat treatment unit group 33 as shown in FIG. 5, in addition to the position directly below the second substrate transfer unit 32 as in the above embodiment. . The exhaust pipe contact panel 5 is attached to the exhaust opening 60 provided directly below the heat treatment unit group 33.
0 is arranged, and the resist coating unit 8, the phenomenon unit 9, the adhesion unit 12, and the plurality of heat treatment units 14 are exhausted from the exhaust pipe connection panel 50. Further, the downflow air supplied into the processing station 11 is also discharged from the exhaust opening 60 to the outside of the processing station 11.

Further, as shown in FIG. 6, the exhaust pipe connection panel 50 is arranged in the exhaust opening 61 provided directly below the second substrate transfer unit 32, and the adhesion unit 12 and a plurality of heat treatments are performed from there. The atmosphere in the heat treatment unit of the unit 14 is exhausted, and the exhaust opening 62 is provided directly below the first substrate transfer unit 31.
The exhaust pipe connection panel 50 may be disposed in the above, and the atmosphere in the resist coating unit 8 and the atmosphere in the developing unit 9 may be exhausted from here.

Further, in the embodiment shown in FIG. 6, a partition plate 63 is provided between the lower part of the oven type processing unit group 33 and the lower part of the first substrate transfer unit 31.
The partition plate 63 is erected from the bottom of the casing 2 and has a height that completely separates the lower atmosphere of the oven-type processing unit group 33 and the lower atmosphere of the first substrate transfer unit 31. ing. As a result, the downflow air supplied into the second substrate transfer unit 32 and the oven-type processing unit group 33 receives the exhaust opening 6.
Emitted from 1. In addition, the first substrate transfer unit 31
The downflow air supplied into the spinner type processing unit group is discharged from the exhaust opening 62. In the embodiment of FIG. 6, the atmosphere of the heat treatment type unit and the atmosphere of the liquid processing unit can be easily separated. Therefore, if the atmospheric pressure in the liquid treatment system unit is set higher than that in the heat treatment system unit, it is possible to prevent foreign substances such as particles from entering the liquid treatment unit from the heat treatment unit and the inflow of the hot atmosphere.

The exhaust opening 61 may be provided below the oven type processing unit group 33.
It goes without saying that 2 may be provided below the spinner type processing unit group 34.

The apparatus for applying the resist solution to the surface of the semiconductor wafer and causing the phenomenon has been described above.
It goes without saying that the invention can also be applied to an apparatus for applying a resist solution on the surface of another substrate such as a CD substrate and developing it. Further, as long as the system performs the liquid treatment and the heat treatment, it is not limited to the resist coating and developing system, and can be applied to other devices such as a device for forming a film of polyimide or the like.

[0067]

As described above, according to the present invention,
The other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are positioned directly below the heat treatment unit and directly below the substrate transfer unit, that is, a unit for performing liquid processing such as resist coating and development on the substrate to be processed. Since the heat treatment unit system exhaust pipe is located far away from the liquid treatment unit and the length of the liquid treatment unit system exhaust pipe is long because it is placed in a portion excluding the position directly below the heat treatment unit, It is possible to block the thermal influence. Therefore, it is possible to prevent a change in processing characteristics in the liquid processing and obtain a high product yield.

Further, since the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe can be gathered in one place, the work at the time of installing the substrate processing apparatus, that is, each of the exhaust pipes is performed at the factory. It is possible to significantly reduce the time required for the work of connecting to the exhaust means on the side, and as a result, it is possible to improve the work efficiency when the substrate processing apparatus is installed.

Further, the maintenance in the case where a problem such as clogging occurs in these exhaust pipes can be easily performed by removing the exhaust pipe connecting means, so that the maintainability can be improved. .

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing an entire configuration of a resist coating and developing treatment system according to an embodiment of the present invention, with a part of the interior seen through.

FIG. 2 is a schematic plan view showing the overall configuration of a resist coating and developing treatment system according to an embodiment of the present invention.

FIG. 3 is a sectional view showing a resist coating and developing treatment system according to an embodiment of the present invention.

FIG. 4 is a schematic perspective view showing the vicinity of a lower portion of a resist coating and developing treatment system according to an embodiment of the present invention.

FIG. 5 is an explanatory view showing a resist coating and developing treatment system according to another embodiment of the present invention.

FIG. 6 is an explanatory view showing a resist coating and developing treatment system according to still another embodiment of the present invention.

[Explanation of symbols]

1; resist coating development system 2; Casing 8: Resist coating processing unit (liquid processing unit) 9: Development processing unit (liquid processing unit) 11a; gas supply chamber (gas supply unit) 14; Heat treatment unit 15; Extension unit 16; Cooling processing unit 31; First substrate transfer unit 32; Second substrate transfer unit 33; Oven-type processing unit group 42, 43; exhaust pipe (liquid processing unit system exhaust pipe) 45: Collecting exhaust pipe (heat treatment unit system exhaust pipe) 46, 60, 61, 62; exhaust opening 50: Exhaust pipe connection panel (connection means) 55; Damper (displacement adjusting means) 63; Partition board W: Semiconductor wafer (substrate)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ identification code FI H01L 21/306 J (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/16 G03F 7 / 30

Claims (12)

(57) [Claims] 1. A heat treatment unit for subjecting a substrate to heat treatment, a liquid treatment unit for subjecting a substrate to a liquid treatment, a heat treatment unit and a substrate transfer unit for loading and unloading a substrate from the liquid treatment unit, and one end of the heat treatment unit. A heat treatment unit system exhaust pipe that is connected to the liquid treatment unit and that exhausts the inside of the heat treatment unit; and a liquid treatment unit system exhaust pipe that has one end connected to the liquid treatment unit and that exhausts the inside of the liquid treatment unit. A substrate processing apparatus, wherein the other end of the unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are arranged at either a position directly below the heat treatment unit or a position directly below the substrate transfer unit, respectively. 2. The substrate according to claim 1, wherein both of the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are arranged directly below the heat treatment unit. Processing equipment. 3. The other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are both arranged directly below the substrate transfer unit. Substrate processing equipment. 4. A casing for accommodating the heat treatment unit, the substrate transfer unit, and the liquid processing unit is further provided, and the casing has a ceiling portion thereof at which the heat treatment unit, the substrate transfer unit, and the liquid processing unit. The unit has a gas supply unit for supplying gas, and the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are arranged near the bottom of the unit, and the heat treatment unit is also provided. The substrate processing apparatus according to any one of claims 1 to 3, further comprising an opening configured to discharge the downflow supplied to the substrate transfer unit and the liquid processing unit. 5. A heat treatment unit for heat-treating a substrate, a liquid treatment unit for subjecting a substrate to a liquid treatment, and a first substrate which is arranged between the heat treatment unit and the liquid treatment unit and which carries the substrate in and out. A transport unit, a second substrate transport unit that is provided at a position facing the first substrate transport unit with the heat treatment unit sandwiched therebetween, and that carries the substrate in and out of the heat treatment unit, and one end of the second substrate transport unit serves as the heat treatment unit. A heat treatment unit system exhaust pipe that is connected to exhaust the inside of the heat treatment unit; and a liquid treatment unit system exhaust pipe that has one end connected to the liquid treatment unit and exhausts the inside of the liquid treatment unit. The other end of the system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are respectively connected to a position directly below the heat treatment unit and the first substrate transfer unit. A substrate processing apparatus, characterized in that the substrate processing unit is arranged at either a knit or a position directly below the second substrate transfer unit. 6. The heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are both arranged directly below the first substrate transfer unit. The substrate processing apparatus described. 7. The substrate processing apparatus according to claim 5, wherein both the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are arranged directly below the heat treatment unit. . 8. The heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and a casing for housing the liquid processing unit, further comprising a casing, the casing, the heat treatment unit in the ceiling portion. ,
A gas supply unit for supplying a gas to the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit is provided, and the other end of the heat treatment unit system exhaust pipe is provided near the bottom thereof. The other end of the liquid processing unit system exhaust pipe is arranged, and the downflow supplied to the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit is discharged. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus has an opening. 9. A first substrate that is disposed between the heat treatment unit that performs heat treatment on a substrate, a liquid treatment unit that performs liquid treatment on the substrate, and the heat treatment unit and the liquid treatment unit, and that carries the substrate out to them. A transport unit, a second substrate transport unit which is provided at a position facing the first substrate transport unit with the heat treatment unit interposed therebetween, and which carries a substrate into the heat treatment unit, and one end of which is connected to the heat treatment unit. A heat treatment unit system exhaust pipe for exhausting the inside of the heat treatment unit; and a liquid treatment unit system exhaust pipe having one end connected to the liquid treatment unit for exhausting the inside of the liquid treatment unit, wherein the heat treatment unit system exhaust pipe The other end of the tube is arranged directly below the heat treatment unit or directly below the second substrate transfer unit, and the liquid treatment unit system drain is disposed. The substrate processing apparatus, wherein the other end of the trachea is arranged directly below the liquid processing unit or directly below the first substrate transfer unit. 10. A casing for accommodating the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit; and the heat treatment system exhaust pipe erected from the bottom of the casing. The housing further comprises a partition plate having the same height and separating the lower space of the heat treatment unit and the lower space of the first substrate transfer unit, and the casing has the ceiling of the heat treatment unit and the first space. Of the substrate transfer unit, the second substrate transfer unit, and the liquid processing unit, and a gas supply unit for supplying gas to the liquid processing unit. The heat treatment unit and the second substrate transfer unit have a first opening for discharging the downflow supplied thereto, and the first opening is provided in the vicinity of a bottom portion of the first opening. The second opening for discharging the downflow supplied to the first substrate transfer unit and the liquid processing unit is provided in a portion where the other end of the processing unit meter exhaust pipe is arranged. The substrate processing apparatus described. 11. A connection means is provided at the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe, respectively, to connect these together to another exhaust pipe. The substrate processing apparatus according to any one of claims 1 to 10. 12. An exhaust control means for controlling a flow rate of exhaust flowing through the heat treatment unit system exhaust pipe and the liquid treatment unit system exhaust pipe, respectively.
The substrate processing apparatus according to claim 10.