JP2001023892A - Substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the thermal effect of the exhaust air from a heat-treating unit by arranging the other ends of the exhaust pipes of a heat-treating unit system and a liquid-treating unit system immediately below the heat-treating unit or a substrate transporting unit. SOLUTION: Waste liquid pipes 38 are respectively provided downward from the bottom sections of the cups CP of a resist coating unit and a developing unit for making treated liquids flow to a waste liquid layer. In addition, air outlets 39 are respectively formed through the cups CP for discharging the air or atmospheres in the cups CP to the outside and exhaust pipes 44 through which the atmosphere in the resist coating unit is discharged are respectively connected to the air outlets 39. Moreover, a treatment station has a casing 2 housing first and second transportation units 31 and 32, a spinner type treatment unit group, and an open-type treatment unit group, and is integrally formed with the external wall of each unit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the application of a resist to a substrate to be processed such as a semiconductor wafer or an LCD substrate.
The present invention relates to a substrate processing apparatus that performs processing such as development.

[0002]

2. Description of the Related Art As a coating and developing system for manufacturing semiconductor devices and the like, for example, Japanese Patent Publication No. 2-3019
Japanese Unexamined Patent Publication No. 4 and Japanese Unexamined Patent Application Publication No. 9-266285 are known. These resist coating and developing systems include a resist coating process for applying a resist solution, a heating process for holding the substrate after applying the resist solution in a predetermined temperature atmosphere to cure the resist film, and a process for heating the exposed substrate to a predetermined temperature. A plurality of processing units are provided for performing processes such as a heating process for maintaining the substrate in an atmosphere and a developing process for supplying a developing solution to the exposed substrate to develop the substrate.

[0003] Among these processing units, in a liquid processing unit such as a resist coating processing unit or a developing processing unit, an atmosphere in the unit containing solvent vapor generated during substrate processing is exhausted to a factory exhaust system through an exhaust pipe.

On the other hand, also in the heat treatment unit, the atmosphere in the unit including the solvent atmosphere at a high temperature generated during substrate processing is exhausted to a factory exhaust system through an exhaust pipe provided separately from the exhaust pipe.

In such a resist coating and developing system, since the temperature of the substrate greatly affects the thickness and line width of the resist film formed on the surface thereof, the resist coating and developing process are performed under strict substrate temperature control. Is performed.

[0006]

However, in the above technique, an exhaust pipe for exhausting the atmosphere in the heat treatment unit may be arranged near the resist coating unit or the developing unit. In such a case, an exhaust pipe for exhausting the atmosphere in the heat treatment unit has a thermal effect on the resist coating unit and the developing unit, so that the processing temperature between the substrates is not constant, and the resist film is formed between the substrates. May be uneven in thickness and line width, resulting in a decrease in product yield.

In addition, since the exhaust pipe for exhausting the atmosphere in the liquid processing unit and the exhaust pipe for exhausting the atmosphere in the heat treatment unit are provided at random positions from the main body of the coating and developing system, it is difficult to install the coating and developing system. , That is, the work of connecting these exhaust pipes to the exhaust means on the factory side requires a great deal of labor and time. In addition, there is a problem in maintainability when a problem such as clogging occurs in these exhaust pipes.

The present invention has been made in view of such circumstances, and can reduce the thermal effect of exhaust gas generated in a heat treatment unit on a liquid processing unit such as a resist coating unit or a developing unit. It is an object of the present invention to provide a substrate processing apparatus capable of preventing a change in processing characteristics in liquid processing and maintaining a high yield.

Further, the present invention improves the workability when connecting an exhaust pipe for flowing exhaust gas generated in the liquid processing unit and an exhaust pipe for flowing exhaust gas generated in the heat treatment unit to an exhaust pipe on the factory side. It is an object of the present invention to provide a substrate processing apparatus capable of improving the maintainability.

[0010]

According to a first aspect of the present invention, there is provided a heat treatment unit for performing a heat treatment on a substrate, a liquid treatment unit for performing a liquid treatment on the substrate, and the heat treatment unit. And a substrate transfer unit for loading and unloading a substrate into and from the liquid processing unit, one end of which is connected to the heat treatment unit, a heat treatment unit system exhaust pipe that exhausts the inside of the heat treatment unit, and one end of which is connected to the liquid treatment unit. A liquid treatment unit system exhaust pipe that exhausts the inside of the liquid treatment unit, and the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are positioned directly below the heat treatment unit, respectively. A substrate processing apparatus is provided, which is disposed at any one of positions directly below the substrate transport unit (claim 1).

According to such a configuration, since the exhaust pipe of the heat treatment unit system is far from the liquid processing unit and the length of the exhaust pipe of the liquid processing unit system is long, the heat exhaust from the heat treatment unit to the liquid processing unit can be performed. Thermal effects can be cut off. Therefore, it is possible to prevent a change in processing characteristics in the liquid processing and obtain a high product yield.

In this case, if the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are both arranged at a position directly below the heat treatment unit (claim 2). In addition, since the heat treatment unit system exhaust pipe is disposed farthest from the liquid processing unit, it is possible to further block the thermal influence of the heat exhaust of the heat treatment unit on the liquid processing unit. Further, it becomes possible to combine the exhaust pipes of the heat treatment unit system exhaust pipe and the liquid processing unit system exhaust pipe from the substrate processing apparatus into one, and to connect each exhaust pipe to each factory exhaust pipe. In addition to improving the maintainability, it is also possible to improve the maintainability when a problem occurs in the exhaust pipe.

Further, if both the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are arranged directly below the substrate transfer unit (claim 3), Since the heat treatment unit system exhaust pipe extends almost directly below and the heat influence on the heat treatment unit system exhaust pipe itself is reduced, it is possible to cut off the thermal influence on the liquid treatment unit from the heat treatment unit system exhaust pipe. In addition, it is possible to unite the locations where the heat treatment unit system exhaust pipe and the liquid treatment unit system exhaust pipe are discharged from the substrate processing apparatus.

Further, the apparatus further comprises a casing accommodating the heat treatment unit, the substrate transfer unit, and the liquid processing unit, and the casing has a heat treatment unit, the substrate transfer unit, and the liquid treatment unit on a ceiling thereof. A gas supply unit for supplying gas to the unit, and near the bottom thereof, the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are disposed, and the heat treatment unit And an opening for discharging the downflow supplied to the substrate transport unit and the liquid processing unit. According to such a configuration, the downflow gas flows between the liquid treatment unit system exhaust pipe and the heat treatment unit system exhaust pipe, and the downflow gas serves as an air curtain for the heat of the heat treatment system exhaust pipe. To do
It is possible to cut off the thermal influence from the heat treatment unit system exhaust pipe to the liquid treatment unit. Also, the temperature of the heat treatment unit system exhaust pipe can be reduced by the downflow gas.

According to a second aspect of the present invention, a heat treatment unit for performing heat treatment on a substrate, a liquid treatment unit for performing liquid treatment on a substrate, and a heat treatment unit and the liquid treatment unit are disposed between the heat treatment unit and the liquid treatment unit. A first substrate transport unit for loading and unloading a substrate, and a second substrate transport unit provided at a position opposed to the first substrate transport unit with the thermal processing unit interposed therebetween, and for transporting the substrate into and out of the thermal processing unit And a heat treatment unit system exhaust pipe having one end connected to the heat treatment unit and exhausting the inside of the heat treatment unit, and a liquid treatment unit system exhaust connected at one end to the liquid treatment unit and exhausting the inside of the liquid treatment unit. Pipe, and the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are respectively located immediately below the heat treatment unit. The first substrate transfer unit, and the second substrate processing apparatus, characterized in that arranged in one of a position immediately below the substrate transfer unit is provided (claim 5).

According to such a configuration, as in the first aspect, the heat treatment unit system exhaust pipe is farther from the liquid treatment unit and the length of the liquid treatment unit system exhaust pipe is longer. It is possible to cut off the thermal influence of the exhaust gas on the liquid processing unit. Therefore, it is possible to prevent a change in processing characteristics in the liquid processing and obtain a high product yield.

In this case, the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe may be arranged at a position directly below the first substrate transfer unit. 6) Since the heat treatment unit system exhaust pipe is arranged farthest from the liquid treatment unit, it is possible to cut off the thermal influence on the liquid treatment unit from the heat exhaust of the heat treatment unit. In addition, it is possible to unite the locations where the heat treatment unit system exhaust pipe and the liquid treatment unit system exhaust pipe are discharged from the substrate processing apparatus.

Further, if the other end of the exhaust pipe of the heat treatment unit system and the other end of the exhaust pipe of the liquid treatment unit system are both arranged immediately below the heat treatment unit (claim 7), Since the exhaust pipe extends almost directly below and the thermal influence on the heat treatment unit system exhaust pipe itself is reduced, it is possible to cut off the thermal influence on the liquid processing unit from the heat treatment unit system exhaust pipe. In addition, it is possible to unite the locations where the heat treatment unit system exhaust pipe and the liquid treatment unit system exhaust pipe are discharged from the substrate processing apparatus.

Further, the apparatus further comprises a casing for accommodating the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit, wherein the casing has the heat treatment unit on its ceiling. A gas supply unit that supplies gas to the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit, and the other end of the heat treatment unit system exhaust pipe near the bottom thereof. And the other end of the liquid processing unit system exhaust pipe are arranged, and the down flow supplied to the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit is controlled. It may be configured to have an opening for discharging (claim 8). According to such a configuration, the downflow gas flows between the liquid treatment unit system exhaust pipe and the heat treatment unit system exhaust pipe, and the downflow gas serves as an air curtain for the heat of the heat treatment system exhaust pipe. Therefore, it is possible to cut off the thermal influence from the heat treatment unit system exhaust pipe to the liquid treatment unit. Also, the temperature of the heat treatment unit system exhaust pipe can be reduced by the downflow gas.

According to a third aspect of the present invention, a heat treatment unit for performing a heat treatment on a substrate, a liquid treatment unit for performing a liquid treatment on a substrate, and a liquid treatment unit disposed between the heat treatment unit and the liquid treatment unit. A first substrate transfer unit for unloading a substrate to the first substrate transfer unit;
A second substrate transfer unit that is provided at a position facing the substrate transfer unit and carries a substrate into the heat treatment unit, and a heat treatment unit system exhaust pipe that has one end connected to the heat treatment unit and exhausts the inside of the heat treatment unit When,
A liquid processing unit system exhaust pipe connected to the liquid processing unit at one end thereof to exhaust the inside of the liquid processing unit, and the other end of the heat processing unit system exhaust pipe is positioned directly below the heat processing unit or the second position. Wherein the other end of the liquid processing unit system exhaust pipe is disposed immediately below the liquid processing unit or directly below the first substrate conveying unit. An apparatus is provided (claim 9).

According to such a configuration, since the heat treatment unit system exhaust pipe is far from the liquid processing unit, it is possible to cut off the thermal influence from the heat treatment unit system exhaust pipe to the liquid processing unit. In addition, since the liquid treatment unit system exhaust pipe and the heat treatment unit system exhaust pipe are arranged separately,
There is no thermal effect from the heat treatment unit system exhaust pipe to the liquid treatment unit system exhaust pipe.

In this case, the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit,
And a casing accommodating the liquid treatment unit, and a space erect from the bottom of the casing and having a height equal to that of the heat treatment system exhaust pipe, and separating the space below the heat treatment unit and the space below the first substrate transfer unit. Further comprising a partition plate, wherein the casing has a ceiling portion,
A gas supply unit that supplies gas to the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit, and the other end of the heat treatment unit system exhaust pipe near the bottom thereof Has a first opening for discharging the downflow supplied to the heat treatment unit and the second substrate transfer unit,
And a second opening configured to discharge the downflow supplied to the first substrate transfer unit and the liquid processing unit at a portion near the bottom where the other end of the liquid processing unit total exhaust pipe is disposed. (Claim 1
0). According to such a configuration, since the space below the heat treatment unit and the space below the first substrate transfer unit are separated by the partition plate, the gas of the downflow heated by the heat treatment unit system exhaust pipe is discharged from the liquid treatment unit system exhaust gas. Thermal effects on the tube can be very effectively shut off.

In the first to third aspects of the present invention, the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe may be collectively connected to another exhaust pipe. Connection means for connecting each of them may be provided (claim 11). According to such a configuration, since each exhaust pipe can be smoothly connected to another exhaust pipe, for example, a factory exhaust pipe, workability is improved, and when a problem occurs in the exhaust pipe. Can also be improved in maintainability.

Further, according to the first to third aspects of the present invention, there is further provided an exhaust control means for controlling a flow rate of exhaust gas flowing through the heat treatment unit system exhaust pipe and the liquid treatment unit system exhaust pipe, respectively. (Claim 12). With such a configuration, the flow rate of each exhaust gas can be smoothly controlled. In this case, the operability of adjusting the exhaust amount is improved by arranging the portions for controlling the exhaust amount of each exhaust pipe of the exhaust control means collectively.

[0025]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIGS. 1 and 2 show the overall configuration of a resist coating and developing system 1 for a semiconductor wafer (hereinafter referred to as “wafer”) according to an embodiment of the present invention. FIG. 1 is a schematic perspective view, and FIG. It is a schematic plan view.

The resist coating and developing system 1 according to this embodiment includes a wafer cassette CR capable of accommodating a plurality of wafers W.
A cassette station 10 for loading and unloading wafers by a transfer system outside the apparatus, and loading and unloading wafers W from and into a wafer cassette CR;
A processing station 11 configured by arranging various types of single-wafer processing units for performing predetermined processing one by one, and an interface unit (not shown) for transferring a wafer W to and from an external exposure apparatus are integrated. It is configured in combination.

As shown in FIG. 2, the cassette station 10 has a cassette mounting table 26 on which a plurality of (for example, four) wafer cassettes CR are arranged in a line with the wafer entrances facing the processing station 11 side. It can be placed. In the cassette station 10, a wafer transfer device 21 is provided between the cassette mounting table 26 and the processing station 11. The wafer transfer device 21 is movable along the X direction and has a Z direction. The wafer holding member 21a is configured to be movable in the direction (vertical direction) and the front-back direction and rotatable in the θ direction. Then, the wafer cassette CR mounted on the cassette mounting table 26 by the wafer transfer device 21.
The operation of taking in and out the wafer W is performed. The wafer transfer device 21 includes a first wafer transfer device 23 provided in the processing station 11 and described later.
It is also possible to transfer a wafer to the device.

In the processing station 11, a first transport unit 31 and a second transport unit 32 provided independently of each other and various processing unit groups are arranged. In the first transfer unit 31, there is provided a first wafer transfer device 22 for loading and unloading the wafer W to and from various processing units. The first wafer transfer device 22 is arranged in the Y direction. Along with Z
The wafer holding member 22a is configured to be movable in the direction (vertical direction) and the front-rear direction, and rotatable in the θ direction. In the second transfer unit 32, there is provided a second wafer transfer device 23 for loading and unloading the wafer W to and from various processing units. The wafer holding member 2 is configured to be movable along the Y direction, movable in the Z direction (vertical direction) and the front-rear direction, and rotatable in the θ direction.
3a.

The processing station 11 has a casing 2 for accommodating a first transport unit 31, a second transport unit 32, a spinner type processing unit group and an open type processing unit group, which will be described later. However, the casing 2 is formed integrally with the outer wall of each unit.

The processing unit used in the present embodiment is a spinner type processing unit (liquid) that performs a predetermined processing using a processing liquid while rotating the wafer W placed on a spinner chuck (not shown) in the cup CP. Processing unit) and wafer W
Is roughly divided into an oven-type processing unit (heat treatment unit) for performing a predetermined process by mounting the device on a mounting table (not shown).
The spinner-type processing unit group 34 and the oven-type processing unit group 33 are arranged on both sides of the first transport unit 31 so as to be divided into two. The first transport unit 31 and the second transport unit 32 are separated from each other by the oven-type processing unit group 33.

The arrangement of these processing units will be described in more detail. As shown in FIGS. 1 and 2, a resist coating unit 8 and a developing unit 9 constituting a spinner-type processing unit group 34 include a first transport unit. 3
They are juxtaposed facing one.

The oven type processing unit group 33
Is a first group 3 in which processing units are stacked in four stages, respectively.
3a, the second group 33b, and the third group 33c are arranged side by side. First group 33a on cassette station 10 side
Are, in order from the bottom, between the adhesion unit 12, which performs the hydrophobic treatment for improving the fixability of the resist solution applied to the surface of the wafer W, and the first transport unit 31 and the second transport unit 32. An extension unit 15 for transferring the wafer W, an alignment unit 13 for aligning the wafer W, and two heat processing units 14 for heating the wafer W are stacked and configured. The third group 33c includes two heat processing units 14 for heating the wafer W,
And two cooling processing units 16 for cooling the same.

In the resist coating unit 8 and the developing unit 9 which are spinner type processing units, a predetermined processing using a processing liquid is performed on the wafer W in the cup CP as described above. As shown in FIG. 3, at the bottom of each cup CP of the resist coating unit 8 and the developing unit 9, waste liquid pipes 38 for flowing the treated liquid into a waste liquid tank (not shown) are provided to face downward. ing.
Further, each cup CP is provided with an exhaust port 39 for exhausting the air or atmosphere in the cup. As will be described later, each exhaust port 39 has an exhaust port for exhausting the atmosphere in the resist coating unit 8. A pipe 43 and an exhaust pipe 44 for exhausting the atmosphere in the developing unit 9 are connected.

As shown in FIG. 3, each processing unit is provided with an opening 41 for carrying in / out the wafer W, and these openings 41 are individually formed by a shutter 42 driven by a driving means (not shown). It is opened and closed. Therefore, the first transport unit 31 and the second transport unit 3
The extension unit 15 used for transfer of the wafer W to and from the transfer unit 2 is provided with an opening 41 and a shutter 42 for opening and closing the opening 41 on both surfaces facing the transfer units 31 and 32, respectively.

Further, air supply chambers 11a1 and 11a2 are provided above the processing station 11, and filters 11b1 and 11b2 are mounted below each air supply chamber. As shown in FIG. 1, the ceiling plate 35 of each of the air supply chambers 11a1 and 11a2 has a large number of ventilation holes 36.
, For example, a punching metal is used. The air in the clean room is introduced into the air supply chambers 11a1 and 11a2 through the vent holes 36, and is further purified by the filters 11b1 and 11b2. This air is supplied into the processing station 11.

In the present embodiment, the air supply chambers 11a1 and 11a2 and the filters 11b1 and 11b2 are provided above the processing station 11. However, the present invention is not limited to this. As a configuration not provided, the air may be supplied directly to the air processing station in the clean room.

As shown in FIG.
The down-flow air supplied to the inside of each carrier 22, 2
3 through a plurality of ventilation holes 40 provided in the separator 37 at the lower part of the moving path, and is collected in the exhaust opening 46 at the bottom of the casing 2.
1 is discharged outside. The size of the exhaust opening 46 may be changed so that the atmosphere inside the processing station 11 can be adjusted.

In the resist coating and developing system 1 of the present embodiment, as shown in FIG.
An exhaust pipe 43 for exhausting the internal atmosphere, an exhaust pipe 44 for exhausting the internal atmosphere of the developing unit 9, and the adhesion unit 12
A collective exhaust pipe 45 for exhausting the atmosphere in the heat treatment unit 14 is connected to the inside connection connector 51 of an exhaust pipe connection panel 50 provided at the bottom of the casing 2. Further, on the back side of the surface on which the exhaust pipe connection panel 50 is provided with the inside connection connector 51, there is an outside connection connector 52 for exhausting the respective atmospheres to respective factory exhaust systems (not shown). Exhaust pipes are respectively connected. Further, a damper 55 is attached to the outer connection connector 52 as a displacement adjusting mechanism for controlling each displacement. This damper 55
May be a manual type that can be adjusted directly by the operator,
A control system (not shown) may be used to automatically adjust the exhaust amount to a preset amount.

The exhaust opening 46 for discharging the downflow air to the outside of the processing station 11 may be provided in the exhaust pipe connection panel 50 as shown in FIG. Further, the exhaust pipe connection panel 50 is arranged parallel to the installation surface of the coating and developing processing system 1 as in the present embodiment, and is arranged below the side surface of the resist coating and developing processing system 1 and perpendicular to the installation surface of the system 1. You may.

In the adhesion unit 12 and the plurality of heat processing units 14, since the wafer W is processed at a high temperature, a high-temperature gas is generated. The collective exhaust pipe 45 for exhausting the high-temperature gas, that is, the thermal exhaust pipe, is one of the heat sources, so that its heat influence can be minimized by other units, especially the resist coating unit 8 which is a liquid processing unit and the developing unit. It is necessary to arrange at a position below the unit 9. From this point, the thermal exhaust pipe is a resist solution,
The resist coating unit 8 and the developing unit 9 are located as far as possible from the region where the chemical solution such as the developing solution is stored.
It is desirable to arrange it at a position avoiding the lower part of the liquid processing system unit.

From this point of view, in the present embodiment, the second substrate transport unit furthest from the liquid processing unit is located at a position other than below the liquid processing system units such as the resist coating unit 8 and the developing unit 9. A position directly below 32 is selected, and a thermal exhaust pipe is arranged there, so that the thermal influence of the thermal exhaust pipe does not reach the liquid processing unit.

The exhaust pipe is not limited to a pipe, but may be any pipe that guides the atmosphere in the heat treatment unit and the atmosphere in the liquid treatment unit in a certain direction.

Next, the flow of processing by the coating and developing system will be described. First, in the cassette station 10, one wafer W is taken out from the cassette station CR containing the unprocessed wafer W on the cassette mounting table 26 by the wafer transfer device 21, and then the second wafer of the processing station 11 is processed. The wafer W is transferred to the holding member 23a of the second wafer transfer device 23 provided in the transfer unit 32. Further, the wafer W is carried into the alignment unit 13 by the second wafer transfer device 23.

When the orientation flat and centering of the wafer W are completed in the alignment unit 13, the wafer W is received by the holding member 23a of the second wafer transfer device 23, and subsequently carried into the adhesion unit 12, where it is loaded. Performs the hydrophobic treatment of the wafer W. During the hydrophobic treatment, the wafer W is heated to a high temperature, for example, 90 ° C. in the adhesion unit 12. The adhesion unit 12 is provided with an exhaust port (not shown) for preventing heat inside the unit from being transmitted to the outside of the unit.
The heat exhaust in the unit is exhausted to the collective exhaust pipe 45 via the exhaust port.

In the hydrophobic treatment of the wafer W in the adhesion unit 12, a solvent atmosphere such as HMD
Although the S atmosphere is used, the surplus HM remaining in the adhesion unit 12 after the hydrophobic treatment of the wafer W is completed.
In order to prevent the DS atmosphere from flowing out of the unit, the surplus HMDS atmosphere is exhausted to the collective exhaust pipe 45 via the exhaust port. In this embodiment, since the concentration of the HMDS atmosphere used is very low,
Although the exhaust path of the atmosphere and the exhaust path of the hot exhaust are the same, another exhaust path may be provided so that only the HMDS atmosphere can be exhausted.

The wafer W that has been subjected to the hydrophobizing process is subsequently carried into a predetermined one of the plurality of heat processing units 14 by the second wafer transfer device 23 and heated.
It is carried into a predetermined one of the plurality of cooling processing units 16 and cooled. In this cooling processing unit, the wafer W
Is cooled to a set temperature before the resist coating process, for example, 23 ° C. The heat treatment unit 14 and the cooling treatment unit 16 are provided with an exhaust port (not shown) for preventing heat inside the unit from being transmitted to the outside of the unit, and heat exhaust generated in each unit is The air is exhausted to the collective exhaust pipe 45 via the exhaust port.

When the cooling process of the wafer W is completed, the wafer W is taken out of the cooling unit 16 by the second wafer transfer device 23 and carried into the extension unit 15. Thereafter, the shutter 42 for opening and closing the opening 41 of the extension unit 15 facing the first transport unit 31 is opened, and the extension unit 15 is opened.
The wafer W placed in the inside is unloaded by the first transfer device 22, and the shutter 42 is closed.

Each of the shutters 42 for opening and closing the two openings 41 of the extension unit 15 is provided, for example, for reducing the atmospheric pressure in the first transport unit 31 to the second transport unit 3.
The pressure can be eliminated by using other means capable of preventing foreign substances such as particles from entering the first transport unit 31 from the second transport unit 32, for example, by setting it higher than the atmospheric pressure in the second transport unit 32. is there.

After that, the wafer W is transferred to the resist coating unit 8 by the first wafer transfer device 22. The resist is applied to the surface of the wafer W in the resist coating unit 8. During the resist coating process, the thickness of the resist formed on the surface of the wafer W depends on the atmosphere in the cup CP, and thus the exhaust control is performed through the exhaust port 39 provided at the bottom of the cup CP as described above. Further, since the exhaust port 39 exhausts air not only during the processing of the wafer W but also during the time other than the processing, the cup C
The mist-containing atmosphere generated in P is discharged out of the cup CP without remaining in the cup CP.

When the resist coating process is completed, the wafer W
Is taken out of the resist coating unit 8 by the first wafer transfer device 22 and is carried into the extension unit 15 again. Thereafter, the wafer W is transferred to the extension unit 15 by the second wafer transfer device 23.
It is carried out from the inside, is subsequently carried into a predetermined heating processing unit of the plurality of heating processing units 14, and is heated (prebaked) at a predetermined temperature, for example, 100 ° C. for a predetermined time. Thereafter, the wafer W is carried into a predetermined cooling unit of the plurality of cooling processing units 16 and is cooled to a predetermined temperature, for example, 23 ° C.

By heating (pre-baking) the wafer W on which the resist coating process has been performed as described above, a part of the solvent such as the resist applied to the wafer W evaporates, so that the solvent atmosphere in the unit is exhausted. There is a need to.
For this reason, as described above, the heat treatment unit and the cooling treatment unit are provided with an exhaust port (not shown) for preventing heat inside the unit from being transmitted to the outside of the unit, and each unit generates heat. The exhaust in the heat and solvent atmosphere is exhausted to the collective exhaust pipe 45 via the exhaust port.

Thereafter, the wafer W is carried into the interface section (not shown) provided on the side opposite to the cassette station 10 by the second wafer transfer device 23, subjected to the peripheral exposure processing, and then coated. The entire surface is exposed by an exposure device (not shown) adjacent to the development processing system 1. The wafer W after the exposure processing is transferred to the holding member 23a of the second wafer transfer device 23 via the interface unit.

Thereafter, the wafer W is carried into a predetermined one of the plurality of heat processing units 14 by the second wafer transfer device 23, and is heated (post-exposure bake) at a predetermined temperature, for example, 100 ° C. for a predetermined time. You. Subsequently, the wafer W is carried into a predetermined one of the plurality of cooling processing units 16 by the second wafer transfer device 23, and is returned to normal temperature, for example, 23 ° C. As described above, the heat processing unit 14 and the cooling processing unit 16 are provided with the exhaust ports (not shown) for preventing the heat inside the unit from being transmitted to the outside of the unit, and the heat generated in each unit is provided. The exhaust gas is exhausted to the collective exhaust pipe 45 via the exhaust port.

Subsequently, the wafer W is loaded into the extension unit 15 by the second wafer transfer device 23, and then transferred from the extension unit to the developing unit 9 by the first wafer transfer device 22. In the development processing unit 9, the development processing is performed by uniformly filling the developer on the resist on the surface of the wafer W and stopping for a predetermined time. After the development processing, a rinsing liquid is supplied to the surface of the wafer W, and the developing liquid is washed away. While the predetermined processing is performed on the wafer W in the development processing unit 9, the line width of the exposure pattern on the surface of the wafer W is affected by the atmosphere in the cup CP. Exhaust control is performed from the exhaust port 39. Further, the wafer W
The mist-containing atmosphere generated in the cup CP is exhausted to the outside of the cup CP without remaining in the cup CP because the exhaust is performed not only during the processing but also during a time other than the processing.

The wafer W having undergone the predetermined processing in the development processing unit 9 is carried out by the first wafer transfer device 22 and carried into the extension unit 15. Then, the wafer W in the extension unit 15 is carried into a predetermined one of the plurality of heat processing units 14 by the second wafer transfer device 23, where it is heated at a predetermined temperature, for example, 100 ° C. for a predetermined time (post-baking). ) Is carried into a predetermined one of the plurality of cooling processing units 16 and returned to normal temperature, for example, 23 ° C.

The wafer W thus developed is processed
Is heated (post-baked) to obtain a wafer W
Since a part of the solvent such as the developing solution remaining in the unit evaporates, it is necessary to exhaust the solvent atmosphere in the unit. For this reason,
As described above, the heat treatment unit and the cooling treatment unit are provided with an exhaust port (not shown) for preventing heat in the unit from being transmitted to the outside of the unit, and heat and solvent generated in each unit are provided. Atmospheric exhaust
The air is exhausted to the collective exhaust pipe 45 via the exhaust port.

The wafer W having undergone a series of processing in the processing station 11 as described above is transferred to the holding member 21a of the wafer transfer device 21 on the cassette station side 10, and the processed wafer on the cassette mounting table 26 is processed. It is stored in a cassette CR for storage.

As described above, the coating phenomenon processing system 1 according to the present embodiment includes the wafer W between the cassette station 10 and the interface unit (not shown) for the exposure apparatus.
Transfer unit 3 for transferring wafers and transferring wafers W to and from the oven-type processing unit group 33
2 and a first transfer unit 3 for taking the wafer W in and out of the resist coating unit 8 and the developing unit 9
1 are separated from each other, and the transfer of the wafer W between the first transfer unit 31 and the second transfer unit 32 is performed through the extension unit 15 in the oven-type processing unit group 33. It is constituted in.

Therefore, the hermeticity of the first transport unit 31 is improved, and the first transport unit 3 from the cassette station 10 and the interface unit for the exposure apparatus is improved.
1 can reduce or prevent intrusion of foreign matter such as dust into the wafer 1 and effectively suppress a decrease in yield due to foreign matter adhering to the surface of the wafer W during or immediately before or after resist coating and development. It becomes possible to do.

In the liquid processing units such as the resist coating processing unit 8 and the developing processing unit 9, the influence of temperature change on the processing is large and strict temperature control is performed.
In particular, in the resist coating processing unit 8, if the wafer temperature fluctuates even slightly even under the influence of heat from the outside,
The thickness and the line width of the resist film formed on the wafer surface may vary, and there is a concern about the influence of heat from the thermal exhaust pipe. In this embodiment, however, the resist coating unit 8 and the developing process Since the thermal exhaust pipe is disposed at a position other than the position immediately below the unit 9 and directly below the second substrate transfer unit 32, it is possible to minimize the influence of heat from the thermal exhaust pipe. it can. That is, by disposing the thermal exhaust pipe immediately below the second substrate transfer unit 32, the thermal exhaust pipe is disposed farthest from the liquid processing unit, and furthermore, the thermal exhaust pipe is disposed. It is possible to prevent the temperature of the liquid processing unit system exhaust pipe warmed by the thermal system exhaust pipe from being transmitted to the liquid processing unit due to the length of the pipe being lengthened.
Since the temperature of the thermal system exhaust pipe can be reduced by the downflow gas, it is possible to minimize the thermal effect of the thermal system exhaust pipe on the liquid processing unit. Therefore, in the resist coating process and the developing process, the thickness and the line width of the resist film formed on the wafer surface can be kept uniform, and a high product yield can be obtained.

In the present embodiment, as described above, the collective exhaust pipe 45 for exhausting the atmosphere in the heat treatment unit is used.
An exhaust pipe 43 for exhausting the atmosphere in the unit of the resist coating unit 8 and an exhaust pipe 44 for exhausting the atmosphere in the unit of the developing unit 9 are attached to an exhaust opening 46 below the second substrate transport unit 32. It is connected to an exhaust pipe 50. By combining the positions of the respective exhaust pipes into one place, the coating and developing system 1
The time required for installation work, i.e., the work of connecting these exhaust pipes to the exhaust means on the factory side can be greatly reduced. In addition, regarding the maintenance when a problem such as clogging occurs in these exhaust pipes, the inner connection connector 51 or the outer connection connector 52 is also required.
It can be easily performed by removing.

Incidentally, the position of the heat system exhaust pipe may be a position directly below the heat treatment unit group 33 as shown in FIG. 5 in addition to a position directly below the second substrate transfer unit 32 as in the above embodiment. . The exhaust pipe contact panel 5 is inserted into the exhaust opening 60 provided immediately below the heat treatment unit group 33.
0, and the resist coating unit 8, the phenomenon unit 9, the adhesion unit 12, and the plurality of heat treatment units 14 are evacuated from the exhaust pipe connection panel 50. Further, the downflow air supplied into the processing station 11 is also discharged out of the processing station 11 from the exhaust opening 60.

Further, as shown in FIG. 6, an exhaust pipe connection panel 50 is disposed in an exhaust opening 61 provided immediately below the second substrate transfer unit 32, from which the adhesion unit 12 and a plurality of heating processes are performed. The atmosphere in the heat treatment unit of the unit 14 is configured to be exhausted, and an exhaust opening 62 provided immediately below the first substrate transfer unit 31 is provided.
The exhaust pipe connection panel 50 may be arranged in the exhaust pipe, and the atmosphere in the resist coating unit 8 and the atmosphere in the developing unit 9 may be exhausted therefrom.

Further, in the embodiment shown in FIG. 6, a partition plate 63 is provided below the oven type processing unit group 33 and below the first substrate transport unit 31.
The partition plate 63 stands upright from the bottom of the casing 2 and has a height that completely separates the atmosphere below the oven-type processing unit group 33 and the atmosphere below the first substrate transfer unit 31. ing. As a result, the downflow air supplied into the second substrate transport unit 32 and the oven-type processing unit group 33 is exhausted by the exhaust opening 6.
Emitted from 1. Also, the first substrate transport unit 31
The downflow air supplied into the spinner type processing unit group is exhausted from the exhaust opening 62. In the embodiment of FIG. 6, the atmosphere of the heat treatment unit and the atmosphere of the liquid processing unit can be easily separated. Therefore, if the atmospheric pressure in the liquid processing system unit is set higher than that in the heat processing system unit, it is possible to prevent foreign substances such as particles from entering the liquid processing unit from the heat processing unit and flowing into the hot atmosphere.

The exhaust opening 61 may be provided below the oven-type processing unit group 33.
Needless to say, 2 may be provided below the processing unit group 34 of the spinner type.

The apparatus for applying a resist solution to the surface of a semiconductor wafer to cause a phenomenon has been described above.
It goes without saying that the present invention can also be applied to an apparatus that applies a resist solution to the surface of another substrate such as a CD substrate and develops the resist solution. The system for performing the liquid treatment and the heat treatment is not limited to the resist coating and developing system, but may be applied to other apparatuses such as an apparatus for forming a film of polyimide or the like.

[0067]

As described above, according to the present invention,
The other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are positioned directly below the heat treatment unit and directly below the substrate transfer unit, ie, a unit that performs liquid processing such as resist coating and development on the substrate to be processed. Since the heat treatment unit system exhaust pipe is far from the liquid treatment unit and the length of the liquid treatment unit system exhaust pipe is longer than the liquid treatment unit, Thermal effects can be cut off. Therefore, it is possible to prevent a change in processing characteristics in the liquid processing and obtain a high product yield.

Further, since the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe can be put together at one place, the work at the time of installation of the substrate processing apparatus, that is, the above-mentioned exhaust pipes are removed from the factory. The time required for the work of connecting to the exhaust means on the side can be greatly reduced, and as a result, the work efficiency at the time of installing the substrate processing apparatus can be improved.

Further, maintenance in the case where a problem such as clogging occurs in the exhaust pipe can be easily performed by removing the exhaust pipe connecting means, so that the maintainability can be improved. .

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing the entire configuration of a resist coating and developing processing system according to an embodiment of the present invention, with a part of the inside being seen through.

FIG. 2 is a schematic plan view showing the overall configuration of a resist coating and developing processing system according to one embodiment of the present invention.

FIG. 3 is a sectional view showing a resist coating and developing system according to an embodiment of the present invention.

FIG. 4 is a schematic perspective view showing the vicinity of a lower part of the resist coating and developing system according to one embodiment of the present invention.

FIG. 5 is an explanatory diagram showing a resist coating and developing processing system according to another embodiment of the present invention.

FIG. 6 is an explanatory view showing a resist coating and developing system according to still another embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1; resist coating and developing system 2: casing 8; resist coating unit (liquid processing unit) 9; developing unit (liquid processing unit) 11a; gas supply chamber (gas supply unit) 14; heat processing unit 15; 16; cooling processing unit 31; first substrate transfer unit 32; second substrate transfer unit 33; oven-type processing unit group 42, 43; exhaust pipe (liquid processing unit system exhaust pipe) 45; collective exhaust pipe (heat treatment) Unit-system exhaust pipe) 46, 60, 61, 62; exhaust opening 50; exhaust pipe connection panel (connection means) 55; damper (exhaust amount adjusting means) 63; partition plate W; semiconductor wafer (substrate)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/306 J F term (Reference) 2H025 AB16 AB20 EA04 EA10 FA14 2H096 AA25 AA30 CA12 GB07 GB10 5F043 CC09 CC11 CC12 DD23 EE07 EE08 EE36 EE37 5F046 CD01 CD05 CD06 JA05 JA08 JA22 KA01 KA10 LA07 LA18

Claims (12)

[Claims] A heat treatment unit for performing a heat treatment on the substrate; a liquid treatment unit for performing a liquid treatment on the substrate; a substrate transport unit for carrying the substrate in and out of the heat treatment unit and the liquid treatment unit; A heat treatment unit system exhaust pipe connected to the heat treatment unit and exhausting the inside of the heat treatment unit; and a liquid treatment unit system exhaust pipe connected at one end to the liquid treatment unit and exhausting the inside of the liquid treatment unit. A substrate processing apparatus, wherein the other end of a unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are arranged at one of a position directly below the heat treatment unit and a position directly below the substrate transfer unit, respectively. 2. The substrate according to claim 1, wherein the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are both disposed immediately below the heat treatment unit. Processing equipment. 3. The apparatus according to claim 1, wherein both the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are disposed immediately below the substrate transfer unit. Substrate processing equipment. 4. A heat treatment unit, the substrate transfer unit, and a casing for accommodating the liquid processing unit, wherein the casing has a heat treatment unit, the substrate transfer unit, and the liquid treatment on a ceiling portion thereof. A gas supply unit for supplying gas to the unit, and near the bottom thereof, the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are disposed, and the heat treatment unit 4. The substrate processing apparatus according to claim 1, further comprising an opening for discharging the down flow supplied to the substrate transport unit and the liquid processing unit. 5. A heat treatment unit for performing a heat treatment on a substrate, a liquid treatment unit for performing a liquid treatment on the substrate, and a first substrate disposed between the heat treatment unit and the liquid treatment unit for carrying the substrate into and out of the first substrate A transfer unit, a second substrate transfer unit that is provided at a position facing the first substrate transfer unit with the heat treatment unit interposed therebetween, and loads and unloads the substrate into and out of the heat treatment unit; A heat treatment unit system exhaust pipe connected to and exhausting the inside of the heat treatment unit; and a liquid treatment unit system exhaust pipe connected at one end to the liquid treatment unit to exhaust the inside of the liquid treatment unit. The other end of the system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are respectively positioned directly below the heat treatment unit and the first substrate transfer unit. A substrate processing apparatus, wherein the substrate processing apparatus is disposed at one of a knit and a position directly below the second substrate transport unit. 6. The apparatus according to claim 5, wherein both the other end of the heat treatment unit system exhaust pipe and the other end of the liquid processing unit system exhaust pipe are disposed immediately below the first substrate transfer unit. The substrate processing apparatus according to any one of the preceding claims. 7. The substrate processing apparatus according to claim 5, wherein both the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe are disposed immediately below the heat treatment unit. . 8. A heat treatment unit further comprising a casing for housing the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit, wherein the casing has a heat treatment unit on a ceiling thereof. ,
A gas supply unit for supplying gas to the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit; and, near the bottom thereof, the other end of the heat treatment unit system exhaust pipe. The other end of the liquid processing unit system exhaust pipe is disposed, and the downflow supplied to the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit is discharged. The substrate processing apparatus according to any one of claims 5 to 7, wherein the substrate processing apparatus has an opening to be formed. 9. A heat treatment unit for performing a heat treatment on a substrate, a liquid treatment unit for performing a liquid treatment on the substrate, a first substrate disposed between the heat treatment unit and the liquid treatment unit, and carrying out the substrate to these units. A transfer unit, a second substrate transfer unit that is provided at a position facing the first substrate transfer unit with the heat treatment unit interposed therebetween, and loads a substrate into the heat treatment unit, and one end thereof is connected to the heat treatment unit. A heat treatment unit system exhaust pipe that exhausts the inside of the heat treatment unit; and a liquid treatment unit system exhaust pipe that has one end connected to the liquid treatment unit and exhausts the inside of the liquid treatment unit. The other end of the tube is disposed immediately below the heat treatment unit or directly below the second substrate transfer unit, and the liquid processing unit system is discharged. A substrate processing apparatus, wherein the other end of the trachea is disposed immediately below the liquid processing unit or directly below the first substrate transport unit. 10. A casing accommodating the heat treatment unit, the first substrate transfer unit, the second substrate transfer unit, and the liquid processing unit; and a heat treatment system exhaust pipe erected from a bottom of the casing. A partition plate having the same height and separating the space below the heat treatment unit and the space below the first substrate transfer unit, wherein the casing has, on a ceiling thereof, the heat treatment unit and the first A substrate transfer unit, the second substrate transfer unit, and a gas supply unit that supplies gas to the liquid processing unit, and a portion near the bottom where the other end of the heat treatment unit system exhaust pipe is disposed, A first opening for discharging the downflow supplied to the heat treatment unit and the second substrate transfer unit, and the first opening near the bottom thereof; 10. The apparatus according to claim 9, wherein a second opening for discharging the downflow supplied to the first substrate transfer unit and the liquid processing unit is provided at a portion where the other end of the processing unit total exhaust pipe is disposed. The substrate processing apparatus according to any one of the preceding claims. 11. A connecting means for connecting these to the other exhaust pipes collectively at the other end of the heat treatment unit system exhaust pipe and the other end of the liquid treatment unit system exhaust pipe. The substrate processing apparatus according to claim 1. 12. An exhaust control means for controlling a flow rate of exhaust gas flowing through the exhaust pipe of the heat treatment unit and the exhaust pipe of the liquid processing unit system.
The substrate processing apparatus according to claim 10.