JP3257038B2 - Developing method and developing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing method and a developing device. The developing method and the developing device of the present invention include, for example,
In the production of electronic materials, it can be suitably used as a developing means in a photolithography technique for performing pattern formation by performing exposure and development.

[0002]

2. Description of the Related Art It is well known that a photolithography technique using a photoresist is used in forming an electronic material such as a semiconductor device. When developing a resist after exposure by this type of technology, as shown in FIG. 5A, a semiconductor wafer or the like as a development target 1 is placed on a support 2 such as a wafer chuck, and a developing solution 3 is developed. Is applied to the resist surface 1a on the developing object 1 by using the surface tension of the liquid using the nozzle 30 or the like, and the development proceeds as shown in FIG. Is used. In this specification, the fact that the developing solution is adhered to the surface to be developed by utilizing surface tension is referred to as “liquid level”. In FIG. 5, reference numeral 11 denotes a cup of the developing device.

It is well known that, in general, the developing speed changes with the change in the temperature of the developing solution, and thus the line width of the developed resist changes. (Preprints 2a-K-2 of the Japan Society of Applied Physics, Spring 1989). , 29p-L-
10).

On the other hand, conventionally, it has been said that a developing solution having a thickness of several mm is provided on a wafer as a developing object during development, so that the heat capacity is large and there is no temperature change. Therefore, in the prior art, only the temperature of the discharged developer is controlled.

However, it has now been found that the temperature of the developing solution changes by about 6 ° C. during development. This temperature drop is presumed to be mainly due to evaporation of the developer. It was also found that a temperature difference occurred between the center and the periphery of the wafer. That is, as shown in FIG. 6, the horizontal axis represents time,
Looking at the graph with the temperature of the developer on the vertical axis, both the center of the wafer indicated by a black circle and the periphery of the wafer indicated by a white circle are approximately 4 ° C. due to the evaporation of the developer in 100 seconds.
, And a temperature drop of about 6 ° C. occurs for 300 to 600 seconds. In addition, the temperature itself is different between the center and the periphery of the wafer, and the behavior of the state of the temperature change is considerably different. Such a temperature difference is considered to occur for the following reasons. . That is, the temperature is hardly lowered near the center of the wafer because it is in contact with the wafer chuck serving as the support portion 2, and the temperature is easily lowered because there is nothing around the periphery. Therefore, a temperature difference occurs. As shown in FIG. 5B, this occurs inevitably because the developing object 1 has a larger area than the supporting portion 2 and the periphery does not contact the supporting portion 2. It is to be noted that mounting the wafer as the development target 1 on the smaller wafer chuck (support portion 2) requires a smaller wafer chuck than the wafer because of the presence of a wafer transport system. Minimize contamination with developer. Based on the reason.

[0006] Under the influence of the above-mentioned change in the temperature of the developing solution, in a resist sensitive to temperature, the line width around the wafer becomes thin. That is, as shown in FIG. 7A, regarding the substrates 1 to 7 (see FIG. 7B) of the wafer as the object 1 to be developed, looking at the uniformity of the resist line width in the wafer surface in the related art, As shown in FIGS. IIa to IIc, there is a tendency that the center part becomes thicker and the peripheral part becomes thinner. The difference is 0.
The thickness is about 04 to 0.05 μm (the resist used is FH-EX of Fuji Hunt Co., Ltd.).

As such a resist sensitive to a change in the temperature of the developing solution, there is, for example, a resist for excimer laser lithography. Since the excimer laser lithography technique is effective against the recent trend of miniaturization and integration, it is desired to solve the above problem.

In order to solve this problem, as shown in FIG. 8, by making the wafer chuck (supporting portion 2) the same as or larger than the wafer (development object 1),
It is also conceivable that the entire wafer is brought into contact with the wafer chuck to improve in-plane uniformity. However, this technique does not always eliminate the influence of the wafer chuck 2 and does not provide a drastic solution. In addition, there is a new problem of installation of wafer transfer means and contamination by a developing solution, which is not practical.

[0009]

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art, in which the temperature of the developer on the resist surface, which is the surface to be developed, becomes uniform in the surface, the development change is small, and the development speed is reduced. Therefore, it is an object of the present invention to provide a developing method capable of improving the uniformity of the resist line width in the plane of a wafer or the like even in the case of resist development.

[0010]

Means for Solving the Problems Each of the inventions according to the present application is described.
In order to achieve the above object,
You.

The developing method according to the present application has the following configuration.
Thereby, the above object is achieved.

[0012] The invention according to claim 1 of the present application is directed to an exposure method on a substrate.
Developing the completed resist, wherein the resist
The substrate is brought into contact with the substrate in a small area compared to its surface area.
The developer is supported on the supporting member, and the developer is supplied on the resist.
And the developer is raised using the surface tension of the solution.
In the method of accumulating on the resist in the configuration and proceeding with development
Then, after supplying the developing solution on the substrate with resist,
The substrate with resist is separated from the support member by using an isolating means.
Isolating the substrate with the resist and the supporting member
JP, further comprising the step of advancing the development after isolation from
Development method of exposed resist
The above object is achieved more.

[0013] The invention according to claim 2 of the present application is characterized in that the resist
The separation between the attached substrate and the supporting member of the substrate is
The contacting is effected by means of an isolation which is essentially a point contact;
A method for developing an exposed resist according to claim 1.
Thus, the above object is achieved.

[0014] The invention according to claim 3 of the present application is the above-mentioned isolation means.
3. The exposed laser of claim 2, wherein the step is temperature controlled.
This is a method for developing dist, which achieves the above object.
Is what you do.

[0015] The invention of claim 4 of the present application, the resist
The separation between the attached base and the support member of the base is supported by the support of the base.
3. The method is performed by gas blown from a holding member.
The method for developing an exposed resist described in
The above object is achieved more.

The invention according to claim 5 of the present application is characterized in that the resist
The separation between the attached base and the support member of the base is supported by the support of the base.
Gas blown obliquely from the holding member to the base
The exposure of the exposed resist according to claim 2.
An imaging method which achieves the above objectives
is there.

[0017] The invention according to claim 6 of the present application is characterized in that the resist
The separation between the attached base and the support member of the base is supported by the support of the base.
Temperature of the atmosphere around the substrate blown out from the holding member and
5. The method according to claim 4, which is performed by a gas whose temperature is controlled to the same degree.
Or the method for developing an exposed resist described in 5 above.
Thus, the above object is achieved.

Next, the developing device according to the present application has the following configuration.
By doing so, the above object is achieved.

[0019] The invention according to claim 7 of the present application is directed to a method of exposing a substrate to light.
This is a device for developing a resist that has been completed.
The developer supplied on the strike is removed using the surface tension of the solution.
A device that builds up on the resist and develops it
In the course of the development, the supporting member is
Exposed resist, wherein the substrate is isolated from the substrate
A developing device for a wafer, which achieves the above object.
Things.

[0020] The invention according to claim 8 of the present application is directed to a method of exposing a substrate to light.
This is a device for developing a resist that has been completed.
The developer supplied on the strike is removed using the surface tension of the solution.
Device that builds up on resist and develops on resist
In, means for supplying a developer on the resist,
Small area compared to the surface area of the substrate with resist
In a first support member for supporting in contact with the substrate, wherein
The contact with the substrate is substantially point contact, and
And a second support member for isolating the said base, said Le
The substrate with dist is at least when development is in progress.
The substrate with resist is supported by a second support member.
When not supported by the second support member,
Is an exposed resist supported by the first support member
Developing device. Which achieves the above object
Things.

The invention according to claim 9 of the present application is directed to the second support.
Temperature control for controlling the temperature of the second support member by the holding member
9. Development of the exposed resist according to claim 8, comprising means.
Device that achieves the above objectives.
You.

The invention according to claim 10 of the present application is an apparatus for developing an exposed resist on a substrate, wherein at the time of development,
In an apparatus for developing and supplying a developing solution supplied onto a resist from the developing solution supply means on a resist in a configuration in which the developing solution swells using the surface tension of the solution, the substrate with the resist is smaller than the surface area thereof. A support member for contacting and supporting the substrate in area, and the support member has a blowout port for blowing out gas, and the resist-attached substrate has a gas blowout port for the support member at least when development is in progress. is supported in isolation from the support member by the gas blown out from, when the gas is not blown, the Regis <br/> DOO with the substrate is supported by the support member, a developing apparatus exposed resist, Thereby, the above object is achieved.

The invention according to claim 11 of the present application is the invention according to claim 10, wherein the gas outlet of the support member is provided so as to blow gas obliquely to the substrate with resist. A developing device for achieving the above object.

According to the invention of claim 12 of the present application, the air
Means for controlling the temperature of the body is connected to the base outlet
The exposed resist according to claim 10 or 11, wherein
Which achieves the above object.
It is.

Next, a further developing method according to the present application is as follows.
With the configuration, the above object is achieved.

The invention according to claim 13 of the present application is directed to a method of
A method of developing an exposed resist, comprising:
Attached substrate to the substrate in a small area compared to its surface area
It is supported by a supporting member that comes into contact with
An image liquid is supplied, and the developer is filled using the surface tension of the liquid.
With the structure raised, it accumulates on the resist and proceeds with development.
Method compared to the temperature of the developer supplied.
The resist-coated substrate set at a relatively low temperature has
An exposed resist that supplies the developer and advances the development
Which achieves the above object.
It is.

The invention of claim 14 of the present application, the Regis
Pre-cooled substrate and supply developer to the cooled substrate
And developing the exposed resist according to claim 13.
A developing method which achieves the above object
It is.

The invention according to claim 15 of the present application is provided.
The developing solution is heated at the temperature of the resist-supported substrate supported by the support member.
Control the temperature higher and adjust the temperature and supply of the resist-coated substrate.
Wherein the difference in the temperature of the developing solution is set to 5 to 10 ° C.
13. The method for developing an exposed resist according to item 13, wherein
This achieves the above object.

[0029] The invention according to claim 16 of the present application is characterized in that the dew on the substrate
A method of developing an exposed resist, comprising:
Attached substrate to the substrate in a small area compared to its surface area
Supported by a contacting support member, a developer is applied on the resist.
Supply and raise the developer using the surface tension of the solution
Storing on the resist and proceeding development
In the step of supplying pure water onto the resist, before
Store the supplied pure water on the resist and leave it,
The temperature of the substrate with resist is determined by evaporation of the stored pure water.
And reducing the accumulated pure water from above the resist
Supplying a developing solution onto the resist after the removal
When the step of developing the resist by the developer containing
A method of developing an exposed resist.
The purpose is achieved.

The invention of the present application claims 17, wherein Regis
The temperature of pure water supplied to the substrate with
5 ° C or more compared to the temperature of the substrate with substrate and the substrate support member
17. The exposed state according to claim 16, wherein the temperature difference is set low.
A resist development method that achieves the above objectives.
Is what it does.

Next, a further developing device according to the present application is as follows.
With the configuration, the above object is achieved.

[0032] The invention according to claim 18 of the present application is directed to the method of
When developing the exposed resist, the substrate with the resist
Contacting the substrate with a small area compared to its surface area
A developing device supported by a support member, which is used for development.
The current supplied to the resist from the developer supply means.
The image liquid is raised using the surface tension of the liquid.
An apparatus for developing and reservoir on resist, the Regis
Means for supplying pure water onto the resist, and a developer on the resist.
And a means for supplying a developer.
Prior to the supply, pure water is supplied onto the resist by the pure water supply means.
Supply and swell using the surface tension of pure water
Pool on the resist to reduce the temperature of the substrate with resist.
And then developed on the resist by the developer supply means.
Exposed resist that is configured to supply liquid and develop
Which achieves the above object.
It is.

The invention of claim 19 of the present application is provided
It has a device for adjusting the temperature of pure water, and the pure water temperature control device is
19. The method according to claim 18, wherein said means for supplying pure water is connected to said means for supplying pure water.
Developing device for exposed resist described in <nbsp>
This achieves the above object.

[0034]

In each of the inventions of the present application, the development is carried out in such a manner that the temperature distribution of the developing solution on the resist is suppressed from spreading. , The development change is small, and the development speed is constant. Therefore, even in the case of resist development, the uniformity of the resist line width in the plane of a wafer or the like is improved.

Further, in each of the inventions of the present application, as a means for suppressing the spread of the temperature distribution of the developing solution, means for advancing development by separating a supporting portion such as a wafer chuck and a developing object such as a wafer from each other is used. According to the present invention, it is possible to eliminate the influence of the support portion (wafer chuck) and the like, suppress a temperature change, and achieve uniform development.

In the invention in which a liquid layer of pure water is formed on a resist to be developed and the semiconductor substrate is cooled, and then the developing solution is applied, the temperature change due to cooling from the beginning is prevented. , Uniform development can be achieved.

Further, the temperature of the developing solution is maintained relatively higher than the respective temperatures of the semiconductor substrate or the like as the object to be developed, the support of the semiconductor substrate or the like, and the developing atmosphere, and the developing solution is deposited on the resist upper surface. Regarding the applied invention, uniform development can be achieved by maintaining the developer at a high temperature.

After applying a developing solution to the upper surface of the resist which is the developing surface to form a liquid layer of the developing solution on the upper surface of the resist, the cover is brought into contact with or close to the liquid layer surface of the developing solution. In the invention for performing development, evaporation of the developing solution is prevented, and thus temperature change due to evaporation is prevented, so that uniform development can be achieved.

[0039]

Embodiments of the present invention will be described below. However, needless to say, the present invention is not limited by the following examples.

Embodiment 1 In this embodiment, the present invention is embodied as a developing method in a photolithography technique in which a fine resist pattern needs to be formed as in the case of manufacturing a fine semiconductor integrated circuit device.

In this embodiment, although a fine pattern can be formed, FH-EX (Fujihunt Co., Ltd.) for excimer laser, which is a resist sensitive to temperature change, is used.

Referring to FIG. In the present embodiment, a supporting member 2 serving as a wafer chuck supports a wafer serving as a developing target substrate 1 having a larger area than the supporting member 2, and a developing solution 3 is filled on a developing surface, and FIG. The development is performed in the state as shown in FIG. 1B. At this time, as shown in FIG. 1C, the development is performed by separating the wafer chuck as the support member 2 and the wafer as the substrate 1 to be developed. Let it progress. 1a is a resist surface to be developed.

More specifically, in this embodiment, FIG.
As shown in (1), a developing substrate 3 (wafer) is fixed to a supporting member (wafer chuck) 2 and the developing solution 3 is discharged from a nozzle 30 while rotating. Thereafter, when stopped, the developing solution 3 is held on the developing target substrate (wafer) 1 by the surface tension to be in a state shown in FIG.

Next, in this embodiment, the suction supporting vacuum applied to the wafer chuck, which is the supporting member 2, is cut off, and a pin as isolation means is provided at the lower part of the wafer.
By raising 51a and 51b, the substrate (wafer) 1 to be developed is separated from the supporting member (wafer chuck) 2, and FIG.
Then, development proceeds.

In this embodiment, since the wafer as the substrate 1 to be developed is separated from the wafer chuck as the support member 2, there is no influence of the wafer chuck as the support member 2, and the temperature distribution in the wafer surface is not affected. The development speed becomes uniform. Therefore, the uniformity of the resist line width in the wafer surface is improved. FIG. 7A shows the in-plane uniformity of the resist in this example by reference numeral I.
The variation is smaller than that of the case of IIc, that is, 0.01 μm
It is in the degree.

Embodiment 2 In this embodiment, as in Embodiment 1, the wafer as the substrate 1 to be developed is isolated by being supported by pins 51a and 51b as isolation means. However, the pins 51a and 51b may cool down as the number of developed images increases.
There is a possibility that the temperature of the developer drops near the contact of the pins 51a and 51b, and this may adversely affect the uniformity of development.

Therefore, in this embodiment, as shown in FIG.
The temperature controller 6a is configured to return the temperature to the initial temperature for each wafer as the substrate 1 to be developed. In FIG. 2, reference numeral 61 denotes temperature-regulated water, and 62a denotes a heat exchanger.

Third Embodiment Next, a third embodiment will be described with reference to FIG. Also in this embodiment, first, the wafer as the substrate 1 to be developed is fixed to the wafer chuck as the support member 2 and then the nozzle 30 is fixed.
The developing solution 3 is discharged from FIG. 3 (FIG. 3A). Then, when stopped, the developer 3 is applied on the wafer, and development is started (FIG. 3B). Here, in this example, the wafer chuck line is switched from vacuum to air (Air) by the electromagnetic valve 7. Then, as shown in FIG. 3C, air 8 is blown out from the wafer chuck, which is the support portion 2 in this example, and the substrate 1 to be developed (wafer) and the support member (wafer chuck) 2 are separated. That is, the air 8 serves as an isolation means for isolating both.

Therefore, the temperature within the wafer surface becomes uniform,
The developing speed becomes uniform. Thereby, the resist line width uniformity is improved.

Fourth Embodiment This embodiment is a modification of the third embodiment. As shown in FIG. 4, a groove 21 for blowing air out of a wafer chuck serving as a support portion 2 is formed obliquely.

Thus, the flow velocity of the air 8 on the back surface of the wafer becomes higher, and the pressure drops (Venturi effect). Accordingly, the wafer is held at a certain height above the wafer chuck (the Venturi effect is obtained even with a vertical groove).

Embodiment 5 Referring to FIG. In the third embodiment, the temperature of the air 8 is
If the temperature is different from the ambient temperature, the temperature distribution may be adversely affected. For example, when the temperature of the air 8 is lower than the ambient temperature, the temperature of the developing solution at the center of the wafer decreases. Therefore, in this example, a temperature controller 6d for controlling the temperature of the air 8 is provided. As a result, it is possible to further maintain the temperature of the developer. Reference numeral 61 denotes temperature-regulated water whose temperature has been regulated by the temperature regulator 6d. The temperature of the air 8 is made equal to the temperature of the atmosphere by the heat exchanger 62d.

Example 6 When a developing solution is discharged onto a wafer on which an exposed resist is placed on the upper surface, the temperature of the wafer decreases. Therefore, when pure water is similarly discharged onto the wafer surface, the temperature of the wafer drops by the same degree.

FIG. 10 is a process schematic diagram for explaining another embodiment (Embodiment 6) of the method for developing a resist according to the present invention.

As shown in FIG. 10 (a), a wafer 1 which is a semiconductor substrate on which a resist 1a having a predetermined pattern exposed thereon is mounted, and a wafer chuck 2 which is a support for
Spin at 10 to 50 rpm for ~ 5 seconds, and use the pure water nozzle 40
From the surface of the resist 1a. afterwards,
When the rotation of the wafer 1 is stopped and the discharge of the pure water 4 is stopped, a pure water liquid layer 4 formed by surface tension on the resist 1a is formed as shown in FIG. 10B.

When left in this state, the temperatures of the wafer 1 and the wafer chuck 2 gradually decrease due to evaporation of pure water. The standing (resting) time was about 300 seconds. The temperature drop due to the evaporation of water is about the same as that of the developer and pure water when left for about 300 seconds or more. As shown in FIG. 6, the temperature of the wafer 1 drops to 17 ° C. Temperature (temperature of wafer chuck 2)
Eliminates the difference.

Next, the pure water liquid layer 4 applied on the resist 1a
At 4000 rpm for about 10 seconds as shown in FIG.
Shake off and dry while rotating with (Spin Dr)
y) Then, the resist 1a is purified water at 1000 rpm for 3 seconds.
Pre-wet while rotating with, and then, as shown in FIG. 10 (d), the developing solution 3 whose temperature has been adjusted to 17 ° C. is discharged from the developing solution nozzle 30 as shown in FIG. 10 (e). The liquid layer 3 of the developing solution is put on the resist 1a as described above, and the developing is carried out for about 40 seconds. After the development is completed, a pure water rinse is performed at 1000 rpm for about 10 seconds, and the water is shaken off while rotating at 4000 rpm for about 10 seconds, and dried (Spin Dry) to complete the development process.

FIG. 11 shows a flowchart of the above process. FIG. 12 shows a flowchart of a conventional method as a comparative example for comparing the effect with the sixth embodiment.

As shown in FIG. 12, the conventional method is a method in which a developing solution is simply discharged onto a surface of an exposed resist 1a on a wafer 1 and is then filled, and then the development is performed while still standing. In this method, the wafer or the like is not cooled before the development.

FIG. 13 shows the effect of the sixth embodiment on the temperature drop. According to FIG. 13, the temperature drop of the developing solution was 6 ° C. in the conventional method, but in the case of the sixth embodiment, the temperature drop was suppressed to 2 ° C., and the temperature of the developing solution during development was stable. You can see that

FIG. 14 shows the result of measuring the uniformity of the resist line width after the completion of the development by the present Example 6 and the conventional method. The resist line width was measured at seven locations on each resist surface as shown in FIG. From FIG. 14, it can be seen that the range of the level line width is smaller in the sixth embodiment, and the in-plane uniformity of the level is improved.

As a developing solution, a 2.38% aqueous solution of NMD-3 (ammonium hydroxide) was used, and as a support for the wafer, a wafer chuck was made of Delrin.

Example 7 In order to enhance the cooling effect of pure water, the temperature of pure water is made lower than the temperature of wafer 1 and wafer chuck 2 by 5 ° C. or more.

FIG. 9 is a schematic view showing a resist developing apparatus for performing the method of the embodiment of the present invention. As shown in FIG.
After the wafer 1 on which the resist 1a is mounted is fixedly held on the wafer chuck 2, pure water is discharged onto the wafer 1 to cool the wafer 1 and the wafer chuck 2. The pure water used here is heat-exchanged with the water whose temperature has been adjusted by the temperature controller 6b in the heat exchanger 62b. Due to this heat exchange, the temperature of the pure water becomes lower than that of the wafer 1 and the wafer chuck 2, so that the cooling effect is improved.
It took no seconds.

In the seventh embodiment, pure water is supplied to the temperature controller 6b at 18 ° C.
, The wafer 1 and the wafer chuck 2 are 1
The time required to decrease to 7 ° C. was 100 seconds. Thereafter, pure water is shaken off in the same manner as in Example 6, and the developer is exchanged with water whose temperature has been adjusted by the temperature controller 6c in the heat exchanger 62c. The developing solution having the predetermined temperature was discharged onto the wafer 1 (resist 1a) through the developing solution nozzle 30, and was used for development in a state where the atmosphere was controlled by the temperature / humidity controller 10. In Example 7, as in Example 6, the in-plane uniformity of the resist line width was improved. In the figure, reference numeral 11 denotes a cup for receiving pure water or a waste liquid of a developer, and reference numeral 12 denotes a hood of a developing chamber.

Embodiment 8 This embodiment is a modification of Embodiments 6 and 7, in which the wafer 1 is cooled before the development of the resist 1a. That is, the wafer 1 is cooled by a wafer temperature controller (not shown) provided below the wafer. For example, water adjusted to 17 ° C. is passed through the wafer temperature controller. As a result, the wafer 1 is cooled to 17 ° C. The wafer 1 cooled to 17 ° C. is transferred into a cup 11 as shown in FIG. At this time, the wafer chuck 2 is cooled by the wafer 1. Therefore, in the eighth embodiment, the cooling time of the wafer in the case of the sixth embodiment is further reduced. That is, in Example 6, the wafer was set at 17 ° C.
It took 300 seconds to cool down, but in the method of Example 8, the time was reduced to 200 seconds.

The effect of the present embodiment is that the uniformity of the line width within the resist surface is improved as compared with the conventional method as in the case of the sixth embodiment.

Example 9 In Example 6, the temperature of the developing solution 3 was reduced without cooling the wafer, the wafer chuck and the like.
And a temperature higher than the temperature of the wafer chuck 2. For example, the temperature of the developing solution 3 was set to 23 ° C. while the temperature of the wafer 1 and the wafer chuck 2 was set to 17 ° C.

When the developing solution 3 is applied on the wafer 1 (on the resist), the temperature around the wafer 1 immediately becomes 23 ° C.
The temperature near the center of the wafer 1 becomes lower than the above 23 ° C., for example, 18 to 20 ° C. due to the heat capacity of the wafer chuck 2. Therefore, since the developing speed is higher as the temperature is lower, the developing speed is higher near the center of the wafer 1 than at the periphery of the wafer 1.

However, as the development proceeds, the temperature decreases due to the evaporation of the developer. This decrease in temperature becomes smaller at the center of the wafer 1 due to the influence of the wafer chuck 2.
Therefore, as the development progresses, the development speed around the wafer 1 becomes higher. Therefore, the total amount of development is
Is relatively uniform between the periphery and the center of the resist, and the uniformity of the resist line width in the wafer plane is improved as in the sixth embodiment.

The result of Example 9 is shown in FIG. 15 in comparison with the conventional developing method. As can be understood from FIG. 15, the line width uniformity of the resist was 0.042 μm in the conventional method and the line width range was 0.042 μm in the ninth embodiment.
It was improved to 08 μm.

In the ninth embodiment, even if the wafer 1 and the wafer chuck 2 are not cooled by pure water, the developer 3
Is set to a temperature higher than that of the wafer 1 and the wafer chuck 2, the same effect as in the sixth embodiment can be obtained.

In this case, it is preferable that the temperature of the developing solution is higher by 5 to 10 ° C. than the temperature of the wafer 1, the wafer chuck 2 and the surrounding atmosphere.

[0074]

[0075]

[0076]

[0077]

[0078]

[0079]

[0080]

[0081]

As described above, according to the developing method of the present invention, the temperature of the developing solution in the exposed resist, which is the portion to be developed of the substrate to be developed, becomes uniform in the plane, and the change in the liquid temperature is small. The development speed is constant, so that the effect of improving the uniformity of the resist line width in the plane of a wafer or the like can be exhibited.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the present invention.

FIG. 3 is a configuration diagram showing a third embodiment (and a fifth embodiment) of the present invention.

FIG. 4 is a configuration diagram showing a fourth embodiment of the present invention.

FIG. 5 is a diagram showing a conventional technique.

FIG. 6 is a diagram illustrating a problem, and is a diagram illustrating a change in temperature of a developer.

FIG. 7 is a view showing the in-plane uniformity of a resist line width of a wafer to be developed.

FIG. 8 is a configuration diagram showing a comparative example.

FIG. 9 is a configuration diagram illustrating a developing device according to a seventh embodiment.

FIG. 10 is a process schematic diagram of Example 6.

FIG. 11 shows a flowchart of a sixth embodiment.

FIG. 12 shows a flowchart of a conventional method.

FIG. 13 is an explanatory diagram of the sixth embodiment, and is a diagram illustrating a width of a decrease in the temperature of the developer.

FIG. 14 is an explanatory diagram of the sixth embodiment, showing the uniformity of the resist line width.

FIG. 15 is a diagram showing resist line width uniformity in Example 9 and a conventional method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Developing body (wafer) 2 Support member (wafer chuck) 3 Developing solution

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (19)

(57) [Claims] 1. A method for developing an exposed resist on a substrate, comprising: supporting the substrate with resist with a support member that contacts the substrate with a small area compared to the surface area thereof; supplying, in the above method are accumulated in the developing solution on the resist in the excitement by utilizing the surface tension of the liquid structure to advance the development, after supplying the developing solution onto the resist with the substrate, isolation
Means for separating the resist-coated substrate from the support member.
Separating the resist-coated substrate from the support member, and
And developing the exposed resist. 2. The substrate with resist and a support member for the substrate.
And the contact with the substrate becomes substantially a point contact.
2. The exposed laser according to claim 1, wherein the exposure is performed by an isolation means.
Developing method of dist. 3. The method according to claim 1, wherein said isolation means is temperature-controlled.
The method for developing an exposed resist according to claim 2. 4. The substrate with resist and a support member for the substrate.
Is separated from the gas blown from the support member of the base.
The exposure of the exposed resist according to claim 1,
Development method. 5. The substrate with resist and a support member for the substrate.
Is separated from the support member of the base with respect to the base.
2. The method according to claim 1, which is performed by a gas blown obliquely.
Method of developing the exposed resist on the screen. 6. The substrate with resist and a support member for the substrate.
Is separated from the base by blowing out from the support member of the base.
Gas whose temperature is controlled to the same temperature as the atmosphere around the body
I Ri is performed, the exposed les according to claim 4 or 5
Developing method of dist. 7. An apparatus for developing an exposed resist on a substrate.
A developer supplied on the resist during development.
The resist in a configuration that swells using the surface tension of the liquid.
In an apparatus for collecting and developing on the upper side, while the development is in progress, the supporting member is separated from the support member by using an isolation unit.
Exposed resists that isolate the substrate
Imaging device. 8. An apparatus for developing an exposed resist on a substrate.
A developer supplied on the resist during development.
Is raised by utilizing the surface tension of the liquid.
Means for supplying a developing solution onto the resist , and a device having a small area compared with the surface area of the substrate with the resist.
A first support member for contacting and supporting the base at the point where the contact with the base is substantially a point contact;
A second support member for isolating the material and the substrate, wherein the resist- containing substrate has at least developed.
In this case, the substrate with resist is supported by the second support member , and the substrate with resist is supported by the second support member.
When not, the base is supported by the first support member.
Developing device for exposed resist. 9. The second support member according to claim 2, wherein the second support member is a second support member.
9. The apparatus according to claim 8, further comprising a temperature adjusting means for adjusting the temperature of the air.
Exposure resist developing device. 10. An apparatus for developing an exposed resist on a substrate, wherein a developing solution supplied from the developing solution supply means onto the resist is raised using a surface tension of the solution during development. An apparatus for storing the resist on the resist and performing development by contacting the substrate with the resist with a small area compared with the surface area of the substrate with the resist, and an outlet for blowing the gas. and, wherein the resist with the substrate is supported in isolation from the support member by a gas at least development is blown out from the gas outlet of the support member when in progress, when the gas is not blown out, with the resist A developing device for an exposed resist, wherein the substrate is supported by a support member. 11. A gas outlet of the support member, wherein:
Gas is blown obliquely to the substrate with resist
The exposed resist according to claim 10, wherein
Imaging device. 12. The means for adjusting the temperature of the gas to be blown out,
12. The device according to claim 10, which is connected to the base outlet.
2. A developing device for an exposed resist according to claim 1. 13. A method for developing an exposed resist on a substrate.
Comparing the substrate with resist with its surface area.
With a support member that contacts the base with a small area.
And supplying a developing solution onto the resist,
The resist is configured to build up using the surface tension of the liquid.
In the method of accumulating on the top and developing, the temperature is relatively lower than the temperature of the supplied developer.
Supplying the developing solution to the set substrate with resist;
A method for developing an exposed resist that advances development. 14. The method according to claim 14, wherein the resist- coated substrate is cooled in advance.
The method according to claim 13, wherein the developing is performed by supplying a developing solution to the removed substrate.
The method for developing an exposed resist according to the above. 15. The developer supplied is supported by a support member.
Temperature of the substrate with resist
The difference between the temperature of the substrate with a strike and the temperature of the supplied developer is 5
14. The exposed resist according to claim 13, which is set to -10 ° C.
Development method. 16. A method for developing an exposed resist on a substrate.
A method, comparing the resist with the substrate to the surface area of their
Supported by a support member that contacts the substrate with a small area,
A developing solution is supplied on the resist, and the developing solution is
It is stored on the resist by a configuration that raises using surface tension.
A method of advancing a Umate development, a step of supplying pure water onto the resist, was left reservoir pure water that is the provided on the resist
The evaporation of the pooled pure water causes the resist-coated substrate to evaporate.
Lowering the temperature of the resist and removing the accumulated pure water from the resist.
A step of supplying a developing solution onto the strike, and a step of developing the resist with the developing solution.
Developing method for the exposed resist. 17. The pure water supplied to the substrate with resist.
Adjusting the temperature, the substrate with resist and the substrate support portion;
The temperature is set lower than the temperature of the material by 5 ° C or more.
A method for developing an exposed resist according to claim 16. 18. A method for developing an exposed resist on a substrate.
In addition, the substrate with resist is small compared to its surface area.
The area supported by the support member in contact with the base body in area
An image device, wherein, during development, the developer supply means
Utilizes the surface tension of the developer supplied on the resist
Builds up and builds up on resist to develop
The apparatus has a means for supplying pure water on the resist and a means for supplying a developer on the resist , wherein the pure water supply is performed prior to the supply of the developer for development.
Pure water is supplied onto the resist from the supply means, and the surface tension of pure water is supplied.
Using a swelling structure, store the resist on the resist
After lowering the temperature of the substrate with the dist, the developing solution is supplied from the developing solution supply means onto the resist.
Supply and development of exposed resist
Imaging device. 19. An apparatus for adjusting the temperature of pure water to be supplied.
The pure water temperature control device is connected to the means for supplying pure water.
19. The method of claim 18, further comprising the step of:
Imaging device.