JPH05198495A - Developing method and device - Google Patents

Abstract

PURPOSE:To improve the in-plane uniformity of the temperature of a developer on a resist surface as the surface to be developed of a body to be developed, to reduce even a developing change, to keep a developing rate constant and to enhance the uniformity of resist line width on a surface such as a wafer regarding resist developing. CONSTITUTION:A previously exposed resist 1a on a base body 1 is developed in a developing method, and constitution, in which the extension of the temperature distribution of a developer 3 on the resist 1a is inhibited, is formed in a process, in which developing is advanced, in a method, in which the base body 1 with the resist is supported by a support member 2 brought into contact with the base body by an area smaller than the surface area of the base body 1 and the developer 3 supplied onto the resist is collected onto the resist by constitution, in which the developer is protruded by utilizing the surface tension of the liquid, and developing is advanced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing method and a developing device. The developing method and the developing device of the present invention include, for example,
It can be suitably used as a developing means in a photolithography technique in which a pattern is formed by performing exposure / development at the time of manufacturing an electronic material.

[0002]

2. Description of the Related Art It is well known to use a photolithography technique using a photoresist when forming an electronic material such as a semiconductor device. When developing the resist after exposure with this kind of technique, as shown in FIG. 5A, the semiconductor wafer or the like as the object to be developed 1 is placed on the support portion 2 such as a wafer chuck and the developer 3 Is adhered to the resist surface 1a on the object to be developed 1 by using the surface tension of the liquid by using the nozzle 30 or the like, and the development is progressed as shown in FIG. 5 (b). Is used. In the present specification, such attachment of the developing solution onto the surface to be developed by utilizing surface tension is referred to as "liquid puddle". In FIG. 5, 11 is a cup of the developing device.

By the way, it is well known that the development speed changes with the change of the developer temperature, and thus the developed resist line width changes (Proceedings of the Applied Physics Society of Japan, Spring 1989, 2a-K-2). , Autumn of the same year, Proceedings 29p-L-
See 10).

On the other hand, in the past, it was said that during development, since the developing solution was deposited on the wafer to be developed with a thickness of several mm, the heat capacity was large and the temperature did not change. Therefore, in the conventional technique, only the discharged developing solution is temperature-controlled.

However, this time, it has been found that the temperature change of the developing solution is actually about 6 ° C. during development. It is estimated that this temperature decrease is mainly due to the evaporation of the developing solution. It was also found that a temperature difference occurs between the center and the periphery of the wafer. That is, as shown in FIG. 6, the horizontal axis represents time,
Looking at the graph in which the developer temperature is plotted on the vertical axis, both the center of the wafer shown by the black circle and the periphery of the wafer shown by the white circle are about 4 ° C due to evaporation of the developer in 100 seconds.
There is a temperature change, and a temperature drop of about 6 ° C. occurs in 300 to 600 seconds. In addition, the temperature itself is different between the center and the periphery of the wafer, and the behavior of the temperature change state is also considerably different. It is considered that such a temperature difference occurs due to the following reasons. . That is, since the temperature near the center of the wafer is in contact with the wafer chuck that is the supporting portion 2, the temperature is hard to drop, and since there is nothing around the periphery, the temperature is easy to drop. Therefore, a temperature difference occurs. As shown in FIG. 5B, since the developed object 1 has a larger area than the supporting portion 2, the periphery does not come into contact with the supporting portion 2, so that it inevitably occurs. The wafer to be developed 1 is placed on a wafer chuck (support portion 2) smaller than this, because the wafer transfer system exists, so the wafer chuck must be smaller than the wafer. Minimize developer stains. Based on the reason.

Due to the above-mentioned change in the temperature of the developing solution, the line width around the wafer becomes narrower in the temperature sensitive resist. That is, as shown in FIG. 7A, when the wafer in-plane uniformity of the resist line width in the prior art is observed for the substrates 1 to 7 (see FIG. 7B) of the wafer that is the object to be developed 1, As shown in FIGS. IIa to IIc, there is a tendency that the central portion is thick and the peripheral portion is thin. The difference is 0.
It is about 04 to 0.05 μm (the resist used is FH-EX manufactured by Fuji Hunt Co., Ltd.).

As such a resist sensitive to the temperature change of the developing solution, there is, for example, a resist for excimer laser lithography. Since the excimer laser lithography technique is effective against the recent trend of miniaturization and integration, it is desired to solve the above problems.

In order to solve this problem, as shown in FIG. 8, the wafer chuck (support portion 2) is made the same as or larger than the wafer (development object 1),
It is also possible to improve the in-plane uniformity by bringing the entire wafer into contact with the wafer chuck. However, this technique does not always eliminate the influence of the wafer chuck 2, and does not provide a drastic solution. In addition, the problem of contamination of the developing solution due to the installation of the wafer transfer means newly arises, which is not practical.

[0009]

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art, in which the temperature of the developer on the resist surface, which is the surface to be developed of the object to be developed, becomes uniform within the surface, the change in development is small, and the developing speed is small. Therefore, it is an object of the present invention to provide a developing method capable of improving the uniformity of the resist line width within the surface of a wafer or the like even in the case of resist development.

[0010]

The invention according to claim 1 of the present application is a method for developing an exposed resist on a substrate, wherein the substrate with a resist has a smaller area than its surface area. In a method in which the developing solution is supported by a supporting member in contact with the resist, and the developing solution supplied onto the resist is accumulated on the resist in such a configuration that the developing solution is raised by utilizing the surface tension of the solution, the developing process proceeds. A method for developing an exposed resist, which comprises the steps of: and a structure for suppressing the spread of the temperature distribution of the developing solution on the resist, thereby achieving the above object.

The invention according to claim 2 of the present application is a method for developing an exposed resist on a substrate, wherein the substrate with resist is supported by a supporting member that is in contact with the substrate in an area smaller than its surface area. In the method of accumulating the developing solution supplied onto the resist on the resist in such a configuration that the developing solution is raised by utilizing the surface tension of the solution to proceed with the developing, A method of developing an exposed resist, which is performed by separating a substrate and a supporting member of the substrate, thereby achieving the above object.

According to a third aspect of the present invention, the resist-attached substrate and the support member for the substrate are isolated by an isolation means in which the contact with the substrate is substantially point contact.
A method for developing an exposed resist according to claim 2, wherein the above object is achieved.

The invention according to claim 4 of the present application is the method for developing an exposed resist according to claim 3, wherein the isolation means is temperature-controlled, thereby achieving the above object. ..

In the invention of claim 5 of the present application, the isolation between the substrate with resist and the supporting member of the substrate is performed by a gas blown from the supporting member of the substrate.
The method for developing an exposed resist according to the item (1), which achieves the above object.

According to the invention of claim 6 of the present application, the isolation between the substrate with resist and the supporting member of the substrate is performed by a gas blown obliquely from the supporting member of the substrate to the substrate. Item 3. A method for developing an exposed resist according to item 2, which achieves the above object.

According to the invention of claim 7 of the present application, the isolation between the substrate with resist and the supporting member of the substrate is controlled to the same level as the temperature of the atmosphere around the substrate blown out from the supporting member of the substrate. 6. The method according to claim 5, characterized in that
Alternatively, it is a method for developing an exposed resist as described in 6, which achieves the above object.

The invention of claim 8 of the present application is an apparatus for developing an exposed resist on a substrate, wherein the developer supplied onto the resist at the time of development is raised by utilizing the surface tension of the solution. A developing device for an exposed resist, characterized in that, in an apparatus for carrying out development by accumulating on a resist with a configuration, it is provided with means for suppressing the spread of temperature change of the developing solution on the resist during the development process. Thus, the above object is achieved.

The invention of claim 9 of the present application is an apparatus for developing an exposed resist on a substrate, wherein the developer supplied onto the resist at the time of development is raised by utilizing the surface tension of the solution. In the apparatus configured to store and develop on a resist, means for supplying a developing solution onto the resist,
It has a first supporting member that supports the resist-attached substrate in a small area compared to its surface area to support the substrate, and a second supporting member that makes substantially point contact with the substrate. However, the substrate with resist is supported by the second supporting member at least during the development, and when the substrate with resist is not supported by the second supporting member, the substrate is the first substrate. A developing device for exposed resist supported by a supporting member, which achieves the above object.

The invention of claim 10 of the present application is the developing device for exposed resist according to claim 9, wherein the second supporting member has a temperature adjusting means for adjusting the temperature of the second supporting member. Therefore, the above object is achieved thereby.

The invention of claim 11 of the present application is an apparatus for developing an exposed resist on a substrate, wherein the developing solution supplied onto the resist from the developing solution supply means is developed during development. In an apparatus for performing development by accumulating on a resist in a structure that swells by utilizing surface tension, a support member for contacting and supporting the substrate with resist in a smaller area than its surface area, and the supporting member , Has a blowout port for blowing out gas, and the resist-attached substrate is supported separately from the supporting member by the gas blown out from the gas blowing port of the supporting member at least when development is in progress, and the gas is When it is not blown out, the resist-provided substrate is a developing device for the exposed resist, which is supported by the first supporting member, thereby achieving the above object.

According to a twelfth aspect of the present invention, in the exposed resist according to the eleventh aspect, the gas blowing port of the supporting member is provided so as to blow gas obliquely to the substrate with resist. The developing device achieves the above object.

The invention of claim 13 of the present application is the developing device for exposed resist according to claim 10 or 11, wherein the means for adjusting the temperature of the gas to be blown out is connected to the substrate outlet. This achieves the above object.

The invention of claim 14 of the present application is a method for developing an exposed resist on a substrate, comprising a supporting member for contacting the substrate with the resist in a smaller area than its surface area. In the method of advancing the development by accumulating on the resist in such a configuration that the developer is supplied onto the resist and the developer is raised by utilizing the surface tension of the solution, the temperature of the supplied developer is increased. A method for developing an exposed resist, in which the developing solution is supplied to the resist-provided substrate set to a relatively low temperature to proceed with development, which achieves the above object.

The invention according to claim 15 of the present application is the method for developing an exposed resist according to claim 14, wherein the substrate with resist is cooled in advance, and a developing solution is supplied to the cooled substrate for development. Thus, the above object is achieved.

According to the sixteenth aspect of the present invention, the temperature of the supplied developing solution is adjusted to be higher than the temperature of the resist-coated substrate supported by the supporting member, and the temperature of the resist-coated substrate and the supplied developing solution are controlled. 14. The temperature difference is set to 5 to 10 ° C.
The method for developing an exposed resist according to the item (1), which achieves the above object.

The invention of claim 17 of the present application is a method for developing an exposed resist on a substrate, wherein the resist-coated substrate is supported by a supporting member that is in contact with the substrate in an area smaller than its surface area. In the method of supplying a developing solution onto the resist and accumulating the developing solution on the resist in such a manner that the developing solution is raised by utilizing the surface tension of the solution and proceeding with the development, supplying pure water onto the resist. And a step of allowing the supplied pure water to be stored on the resist and allowing it to stand, and lowering the temperature of the substrate with resist by evaporation of the stored pure water, and removing the stored pure water from the resist. A step of supplying a developing solution onto the resist afterwards,
A method for developing an exposed resist, comprising the step of developing the resist with the developer, which achieves the above object.

According to the eighteenth aspect of the present invention, the temperature of the pure water supplied to the resist-coated substrate is adjusted so that the temperature difference between the resist-coated substrate and the substrate supporting member is 5 ° C. or more. The method of developing an exposed resist according to claim 17, which is set low, and thereby achieves the above object.

According to a nineteenth aspect of the present invention, when the exposed resist on the substrate is developed, the substrate with resist is brought into contact with the substrate with a smaller area than its surface area and is supported by the supporting member. In a developing device for developing, the developing solution supplied onto the resist from the developing solution supply means is raised by utilizing the surface tension of the solution at the time of development, and is developed on the resist. And a means for supplying pure water onto the resist and a means for supplying a developing solution onto the resist, and prior to the supply of the developing solution for developing, the pure water supplying means moves the resist onto the resist. Pure water is supplied, the temperature of the substrate with resist is lowered by accumulating on the resist in such a configuration that the surface tension of the pure water rises, and then a developing solution is supplied onto the resist from the developing solution supply means. Development It was earthenware pots configuration, a developing apparatus exposed resist, thereby is to achieve the above object.

The invention of claim 20 of the present application has a device for adjusting the temperature of pure water to be supplied, and the pure water temperature control device is connected to the means for supplying pure water. The developing device for exposed resist as described in 19, which achieves the above object.

The invention of claim 21 of the present application is a method of developing an exposed resist on a substrate, wherein the resist-coated substrate is supported by a supporting member that contacts the substrate in a smaller area than its surface area. In the method of supplying a developing solution onto the resist and accumulating the developing solution on the resist in such a manner that the developing solution is raised by utilizing the surface tension of the solution and proceeding with the development, supplying the developing solution onto the resist. And a step of supplying the developing solution and storing it on the resist, and then bringing a cover member for preventing evaporation of the developing solution into close proximity so as to cover the accumulated developing solution or contacting the developing solution. Item 14. The method for developing an exposed resist according to Item 14, which achieves the above object.

The invention according to claim 22 of the present application is the method for developing an exposed resist according to claim 21, wherein the cover member for preventing evaporation of the developing solution is a constant temperature plate whose temperature is kept constant. Therefore, this achieves the above object.

According to a twenty-third aspect of the present invention, when the exposed resist on the substrate is developed, the substrate with resist is brought into contact with the substrate with a smaller area than its surface area and is supported by the supporting member. In a developing device for developing, the developing solution supplied onto the resist from the developing solution supply means at the time of development is accumulated on the resist so as to rise by utilizing the surface tension of the solution, and the developing is performed. A cover member for preventing evaporation of the developing solution accumulated on the resist, and means for supplying the developing solution onto the resist,
The developer is supplied onto the resist from the developer supply unit,
An exposed resist for advancing the development by bringing a cover member for preventing the evaporation of the developing solution when the developing solution is accumulated on the resist into close proximity so as to cover the accumulated developing solution or contacting the developing solution. The developing device achieves the above object.

According to a twenty-fourth aspect of the present invention, in the exposed resist developing apparatus according to the twenty-third aspect, the cover member for preventing the evaporation of the developing solution is a constant temperature plate kept at a constant temperature. Therefore, this achieves the above object.

[0034]

In each of the inventions of the present application, since the development is carried out with a structure for suppressing the spread of the temperature distribution of the developing solution on the resist, the temperature of the developing solution on the resist surface, which is the surface to be developed of the object to be developed, is in-plane , The development change is small, and the development speed is constant. Therefore, even in the case of resist development, the uniformity of the resist line width in the plane of the wafer or the like is improved.

Further, in each invention of the present application, as a means for suppressing the spread of the temperature distribution of the developing solution, a means for advancing the development by separating the supporting portion such as the wafer chuck from the object to be developed such as the wafer is used. According to the invention, the influence of the supporting portion (wafer chuck) and the like can be eliminated, the temperature change can be suppressed, and uniform development can be achieved.

Further, regarding the invention in which the developing solution is applied after the liquid layer of pure water is formed on the resist which is the surface to be developed and the semiconductor substrate is cooled, the temperature change due to the cooling from the beginning is prevented. Therefore, uniform development can be achieved.

Further, the temperature of the developing solution is kept relatively higher than the respective temperatures of the developing substrate, such as the semiconductor substrate which is the object to be developed, the support of the semiconductor substrate and the developing atmosphere, and the developing solution is applied to the upper surface of the resist. With respect to the applied invention, uniform development can be achieved by keeping the developing solution at a high temperature.

Further, after the developing solution is applied to the upper surface of the resist which is the surface to be developed to form the liquid layer of the developing solution on the upper surface of the resist, the cover is brought into contact with or brought close to the liquid layer surface of the developing solution. With respect to the invention in which development is carried out, the evaporation of the developing solution is prevented, so that the temperature change due to the evaporation is prevented and uniform development can be achieved.

[0039]

EXAMPLES Examples of the present invention will be described below. However, as a matter of course, the present invention is not limited to the following examples.

Example 1 This example embodies the present invention as a developing method in a photolithography technique which requires formation of a fine resist pattern as in the case of producing a fine semiconductor integrated circuit device.

In this embodiment, FH-EX (Fuji Hunt Co., Ltd.) for excimer laser, which is a resist capable of forming a fine pattern but sensitive to temperature change, was used.

Referring to FIG. In this embodiment, a support member 2 which is a wafer chuck supports a wafer, which is a substrate 1 to be developed, having a larger area than the support member 2, and a developer 3 is puddle on the surface to be developed. The development is performed in the state as shown in b). At this time, as shown in FIG. 1C, the wafer chuck which is the supporting member 2 and the wafer which is the substrate 1 to be developed are separated from each other. It is something to make progress. Reference numeral 1a is a developed resist surface.

More specifically, in the present embodiment, FIG.
As shown in FIG. 3, the developing object substrate (wafer) 1 is fixed to the supporting member (wafer chuck) 2, and the developing solution 3 is discharged from the nozzle 30 while rotating. After that, when it stands still, the developer 3 is held on the substrate 1 (wafer) to be developed by surface tension, and the state shown in FIG.

Next, in the present embodiment, the vacuum for suction and support which has been applied to the wafer chuck which is the support member 2 is cut off, and the pin which is the isolation means is installed at the lower part of the wafer.
51a and 51b are raised to separate the substrate to be developed (wafer) 1 from the supporting member (wafer chuck) 2 and then, as shown in FIG.
And proceed with development.

In this embodiment, since the wafer, which is the substrate 1 to be developed, is separated from the wafer chuck, which is the supporting member 2, there is no influence of the wafer chuck, which is the supporting member 2, and the temperature distribution in the wafer surface is It becomes uniform and the development speed becomes uniform. Therefore, the resist line width uniformity within the wafer surface is improved. FIG. 7A shows the in-plane uniformity of the resist in this example by reference numeral I.
The variation is smaller than that of IIc, 0.01 μm
It is within the range.

Embodiment 2 In this embodiment as well, as in Embodiment 1, the wafer which is the substrate 1 to be developed is supported by the pins 51a and 51b which are the separating means to separate the wafer. However, the pins 51a and 51b may become colder as the number of processed sheets increases,
There is a possibility that the temperature of the developing solution may drop in the vicinity of the contact between the pins 51a and 51b, which may adversely affect the developing uniformity.

Therefore, in this embodiment, as shown in FIG.
With the temperature controller 6a, the temperature of the wafer to be developed is returned to the initial temperature for each wafer. In FIG. 2, 61 is temperature control water, and 62a is a heat exchanger.

Third Embodiment Next, a third embodiment will be described with reference to FIG. Also in this embodiment, first, the wafer, which is the substrate 1 to be developed, is fixed to the wafer chuck, which is the supporting member 2, and then the nozzle 30 is used.
The developing solution 3 is discharged from the device (FIG. 3A). Then, when it stands still, the developer 3 is deposited on the wafer, and the development is started (FIG. 3B). Here, in this example, the electromagnetic chuck 7 switches the wafer chuck line from vacuum to air. Then, as shown in FIG. 3C, air 8 is blown out from the wafer chuck, which is the support portion 2 in this example, and the substrate to be developed (wafer) 1 and the support member (wafer chuck) 2 are separated from each other. That is, the air 8 serves as a separating means for separating the two.

Therefore, the temperature on the wafer surface becomes uniform,
The developing speed becomes uniform. This improves the resist line width uniformity.

Fourth Embodiment This embodiment is a modification of the third embodiment, in which, as shown in FIG. 4, the air blow-out groove 21 of the wafer chuck which is the supporting portion 2 is obliquely formed.

By doing so, the flow velocity of the air 8 on the back surface of the wafer becomes faster and the pressure drops (Venturi effect). Therefore, the wafer is held at a certain height on the wafer chuck (note that the vertical groove has a Venturi effect).

Example 5 Referring to FIG. In Example 3, the temperature of the air 8 is
If the temperature is different from the ambient temperature, the temperature distribution may be adversely affected. For example, when the temperature of the air 8 is lower than the ambient temperature, the temperature of the developing solution at the center of the wafer decreases. Therefore, in this example, the temperature controller 6d that controls the temperature of the air 8 is provided. As a result, it is possible to further maintain the liquid temperature of the developer. Reference numeral 61 is temperature-controlled water whose temperature is adjusted by the temperature controller 6d, and the temperature of the air 8 is made equal to the temperature of the atmosphere by the heat exchanger 62d.

Example 6 When a developing solution is discharged onto a wafer on which an exposed resist is placed, the temperature of the wafer is lowered. Therefore, when pure water is similarly discharged onto the surface of the wafer, the temperature of the wafer is reduced to the same extent.

FIG. 10 is a process schematic view for explaining another embodiment (Example 6) of the resist developing method according to the present invention.

As shown in FIG. 10 (a), a wafer 1 which is a semiconductor substrate on which a resist 1a which has been exposed to a predetermined pattern is placed, and a wafer chuck 2 which is a supporting table thereof, are attached to a wafer 3
Nozzle for pure water 40 ~
Pure water 4 is discharged onto the surface of the resist 1a. afterwards,
When the rotation of the wafer 1 is stopped and the discharge of the pure water 4 is stopped, the pure water liquid layer 4 formed by the surface tension on the resist 1a is formed as shown in FIG. 10 (b).

If left in this state, the temperatures of the wafer 1 and the wafer chuck 2 gradually decrease due to the evaporation of pure water. The leaving (resting) time was about 300 seconds. The temperature drop due to the evaporation of water is about the same for both developer and pure water when left for about 300 seconds or more. As shown in FIG. 6, the temperature of the wafer 1 drops to 17 ° C. Temperature (temperature of wafer chuck 2)
, The difference disappears.

Next, the pure water liquid layer 4 deposited on the resist 1a.
As shown in Fig. 10 (c), 4000 rpm for about 10 seconds.
Shake to dry while spinning at (Spin Dr
y), and then the resist 1a with pure water at 1000 rpm for 3 seconds
Pre-wet while rotating with, and then discharge the developer 3 whose temperature has been adjusted to 17 ° C. from the developer nozzle 30 as shown in FIG. 10 (d), as shown in FIG. 10 (e). As described above, the liquid layer 3 of the developing solution is deposited on the resist 1a, and development is performed while standing still for about 40 seconds. After the development is completed, a pure water rinse is applied at 1000 rpm for about 10 seconds, and water is spun off and dried (Spin Dry) while rotating at 4000 rpm for about 10 seconds to complete the development process.

FIG. 11 shows a flowchart of the above process. Note that FIG. 12 shows a flowchart of a conventional method as a comparative example for comparing the effect with the sixth embodiment.

As shown in FIG. 12, the conventional method is a method of so-called simply discharging the developing solution onto the surface of the exposed resist 1a on the wafer 1 to fill the surface with the developing solution, and then performing the development by standing still. As described above, the wafer is not cooled before development.

FIG. 13 shows the effect of the temperature reduction of the sixth embodiment. According to FIG. 13, the temperature drop of the developer was 6 ° C. in the conventional method, but in the case of Example 6, the temperature drop was suppressed to 2 ° C., and the temperature of the developer during development was stable. I can see it.

FIG. 14 shows the results of measuring the resist line width uniformity after the completion of development by this Example 6 and the conventional method. The resist line width was measured at 7 points on each resist surface as shown in FIG. 7 (b). It can be seen from FIG. 14 that the level line width range is smaller in Example 6 and the level in-plane uniformity is improved.

A 2.38% aqueous solution of NMD-3 (ammonium hydroxide) was used as the developing solution, and Delrin was used as the material of the wafer chuck as the support for the wafer.

Example 7 In order to enhance the cooling effect with pure water, the temperature of pure water is lower than the temperature of the wafer 1 and the wafer chuck 2 by 5 ° C. or more.

FIG. 9 is a schematic view showing a resist developing apparatus for carrying out the method of the embodiment of the present invention. As shown in FIG.
After the wafer 1 having the resist 1a placed on the upper surface thereof is fixedly held on the wafer chuck 2, pure water is discharged onto the wafer 1 to cool the wafer 1 and the wafer chuck 2. The pure water used here is heat-exchanged with the water whose temperature is controlled by the temperature controller 6b by the heat exchanger 62b. By this heat exchange, the temperature of pure water becomes lower than that of the wafer 1 and the wafer chuck 2, so that the cooling effect is improved.
It didn't even take 0 seconds.

In the seventh embodiment, pure water is heated at 18 ° C. by the temperature controller 6b.
If set to 1, wafer 1 and wafer chuck 2
It took 100 seconds to lower the temperature to 7 ° C. Then, the pure water is shaken off as in the sixth embodiment, and the developer is exchanged with the water whose temperature is controlled by the temperature controller 6c by the heat exchanger 62c. The developing solution having a predetermined temperature was discharged onto the wafer 1 (resist 1a) through the developing solution nozzle 30 and provided for development with the atmosphere controlled by the temperature / humidity controller 10. In this Example 7 as well as in Example 6, the in-plane uniformity of the resist line width was improved. In the figure, 11 is a cup that receives waste water of pure water or developing solution, and 12 is a hood of the developing chamber.

Example 8 This example is a modification of Examples 6 and 7. In this example, the wafer 1 is cooled before developing the resist 1a. That is, the wafer 1 is cooled by a wafer temperature controller (not shown) provided below the wafer. For example, water whose temperature is adjusted to 17 ° C. is supplied to the wafer temperature controller. As a result, the wafer 1 is cooled to 17 ° C. The wafer 1 cooled to 17 ° C. is transferred into the cup 11 as shown in FIG. 9, and is fixedly held on the wafer chuck 2. At this time, the wafer 1 cools the wafer chuck 2. Therefore, in the eighth embodiment, the wafer cooling time in the case of the sixth embodiment is further shortened. That is, in Example 6, the wafer was placed at 17 ° C.
It took 300 seconds to cool down to 200 seconds in the method of Example 8.

The effect of this embodiment is that the uniformity of the resist in-plane line width is improved as compared with the conventional method, as in the sixth embodiment.

Example 9 In Example 6, the temperature of the developer 3 was adjusted to the normal wafer 1 without cooling the wafer, the wafer chuck and the like.
And a temperature higher than the temperature of the wafer chuck 2. For example, the temperature of the wafer 1 and the wafer chuck 2 was set to 17 ° C., and the temperature of the developing solution 3 was set to 23 ° C.

When the developing solution 3 is poured on the wafer 1 (on the resist), the temperature around the wafer 1 immediately reaches 23 ° C.
The temperature near the center of the wafer 1 is lower than 23 ° C., for example, 18 to 20 ° C. due to the heat capacity of the wafer chuck 2. Therefore, the lower the temperature is, the faster the developing speed is, and therefore the developing speed is higher in the vicinity of the center of the wafer 1 than in the periphery of the wafer 1.

However, as the development proceeds, the temperature drops due to evaporation of the developing solution. This temperature decrease becomes small at the center of the wafer 1 due to the influence of the wafer chuck 2.
Therefore, as the development progresses, the development speed around the wafer 1 becomes faster. Therefore, the total amount of development is wafer 1
The resist line width uniformity within the wafer surface is improved in the same manner as in the sixth embodiment, because the peripheral area and the center area are relatively uniform.

The results of Example 9 are shown in FIG. 15 in comparison with the conventional developing method. As can be seen from FIG. 15, the resist line width uniformity was 0.042 μm in the conventional method when the line width range was 0.042 μm.
It was improved to 08 μm.

In the ninth embodiment, the developing solution 3 is used even if the wafer 1 and the wafer chuck 2 are not cooled with pure water.
If the temperature is set to a temperature higher than that of the wafer 1 and the wafer chuck 2, the same effect as that of the sixth embodiment can be obtained.

In this case, it is preferable that the temperature of the developing solution is 5 to 10 ° C. higher than the temperature of the wafer 1, the wafer chuck 2 and the ambient atmosphere.

Tenth Embodiment FIG. 16 is an explanatory diagram of the tenth embodiment.

Exposed resist 1a which is a semiconductor substrate
After the wafer 1 on the surface is fixed on the wafer chuck 2, the developing solution is discharged onto the wafer 1, and the surface of the wafer is filled with liquid and allowed to stand still to form a liquid layer 3 of the developing solution on the wafer 1. As shown in FIG. 16 (a), the lid (cover) 15 is lowered toward the surface of the liquid layer 3 of the developing solution and brought into contact with the surface of the liquid layer 3 of the developing solution as shown in FIG. 16 (b). Further, the lid 15 may not be brought into contact with the surface of the liquid layer 3 of the developer, but may be stationary at a position of about 10 mm or less above the liquid surface capable of preventing evaporation of the developer. lid
Reference numeral 15 is made of Teflon or stainless steel, and is provided with a collar 15a so as to cover the side surface of the liquid layer 3 of the developer. The lid 15 suppresses the evaporation of the developing solution on the upper surface and the side surfaces of the liquid layer 3 and suppresses the temperature drop of the developing solution.

Example 11 Next, Example 11 will be described. In FIG. 17, which is an explanatory view showing the present embodiment, first, as shown in FIG. 17A, after the liquid layer 3 of the developing solution is formed on the exposed resist 1a, the constant temperature plate 16 is lowered toward the developing solution surface. Contact the surface of the developer (Fig. 17
(B)), or it is made to stand still on the liquid surface at about 10 mm or less. This constant temperature plate 16 keeps the temperature of the developing solution at about 20.
While being kept constant at -25 ° C., it also functions as a lid as in Example 1 to suppress the evaporation of the developing solution.

Embodiment 12 FIG. 18 is a schematic diagram showing a resist developing apparatus which can be used in Embodiments 10 and 11.

As shown in FIG. 12, the basic feature of this embodiment is that a constant temperature / constant humidity device 6A is provided in the conventional developing device. The constant temperature / constant humidity device 6A supplies an atmosphere controlled to a constant temperature of, for example, 15 ° C. and a constant humidity of, for example, 60% from the upper portion of the developing chamber hood 12B through the controlled atmosphere supply hood 12A, and the inside of the developing chamber 12C is supplied. Control the atmosphere.

In the developing chamber 12C, the exposed resist 1
The wafer 1 on which a is arranged is fixed to the wafer chuck 2, the developing solution 3 is discharged from the developing solution nozzle 30 while rotating the wafer 1 at 10 to 50 rpm, and a developing solution layer (not shown) is formed on the resist 1a. ) Is formed, the rotation of the wafer 1 is stopped and development is performed for about 40 seconds. After completing the development of the resist 1a in a predetermined pattern, a pure water nozzle
Pure water is discharged from 40, and the developing solution deposited on the wafer 1 is washed with water. At this time, the wafer 1 is about 1000 rp
Then, the pure water discharge is stopped, the wafer 1 is rotated at a high speed of 3000 to 5000 rpm to shake off the pure water, and the development processing step is completed.

In this device, the constant temperature / constant humidity device 6 is used as described above.
Since A is connected to the conventional developing chamber 12C, the atmosphere is controlled, the evaporation of the developing solution is suppressed, and the development uniformity, that is, the resist line width uniformity is improved.

[0081]

As described above, according to the developing method of the present invention, the temperature of the developing solution in the exposed resist, which is the developed portion of the substrate to be developed, becomes uniform in the plane, and the change in the liquid temperature is small. Since the developing speed is constant, it is possible to exhibit the effect that the resist line width uniformity in the surface of the wafer or the like can be improved in resist development.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the present invention.

FIG. 3 is a configuration diagram showing a third embodiment (and a fifth embodiment) of the present invention.

FIG. 4 is a configuration diagram showing a fourth embodiment of the present invention.

FIG. 5 is a diagram showing a conventional technique.

FIG. 6 is a diagram for explaining a problem and is a diagram showing a temperature change of a developing solution.

FIG. 7 is a diagram showing in-plane uniformity of a resist line width of a wafer which is a developing object.

FIG. 8 is a configuration diagram showing a comparative example.

FIG. 9 is a configuration diagram illustrating a developing device according to a seventh embodiment.

FIG. 10 is a process schematic diagram of Example 6.

FIG. 11 shows a flowchart of the sixth embodiment.

FIG. 12 shows a flowchart of a conventional method.

FIG. 13 is an explanatory diagram of Example 6 and is a diagram showing a width of a decrease in developer temperature.

FIG. 14 is an explanatory diagram of Example 6 showing the resist line width uniformity.

FIG. 15 is a diagram showing the resist line width uniformity of Example 9 and a conventional method.

FIG. 16 is a configuration diagram showing an example 10.

FIG. 17 is a configuration diagram showing an eleventh embodiment.

FIG. 18 is a schematic diagram of a developing device according to a twelfth embodiment.

[Explanation of symbols]

 1 Development Target Substrate (Wafer) 2 Support Member (Wafer Chuck) 3 Developer

Claims (24)

[Claims] 1. A method of developing an exposed resist on a substrate, comprising supporting the substrate with resist with a supporting member that is in contact with the substrate in an area smaller than the surface area thereof.
A method of accumulating the developing solution supplied onto the resist on the resist in such a structure that the developing solution is raised by utilizing the surface tension of the solution to proceed with the developing, wherein the step of advancing the developing and the developing solution on the resist The method for developing an exposed resist, which is configured to suppress the spread of the temperature distribution of the above. 2. A method of developing an exposed resist on a substrate, comprising: supporting the resist-provided substrate with a support member that is in contact with the substrate in a smaller area than its surface area, and supplying the resist-coated substrate onto the resist. In a method of advancing the development by accumulating the developing solution on the resist in such a configuration that the developing solution is raised by utilizing the surface tension of the solution, the step of advancing the development is carried out by using the substrate with resist and the supporting member of the substrate. A method of developing exposed resist that is performed separately. 3. The development of the exposed resist according to claim 2, wherein the resist-attached substrate and the support member for the substrate are isolated by an isolation means in which the contact with the substrate is substantially point contact. Method. 4. The method for developing an exposed resist according to claim 3, wherein the isolation means is temperature-controlled. 5. The method for developing an exposed resist according to claim 2, wherein the resist-attached substrate and the supporting member for the substrate are separated from each other by a gas blown from the supporting member for the substrate. 6. The exposed resist according to claim 2, wherein the substrate with resist and the supporting member for the substrate are separated from each other by a gas blown obliquely from the supporting member for the substrate with respect to the substrate. Development method. 7. The isolation between the substrate with resist and the supporting member of the substrate is performed by a gas blown from the supporting member of the substrate and adjusted in temperature to the same level as the temperature of the atmosphere around the substrate. Item 7. A method for developing an exposed resist according to Item 5 or 6. 8. An apparatus for developing an exposed resist on a substrate, wherein a developing solution supplied onto the resist at the time of development is accumulated and developed on the resist in such a manner that the surface tension of the solution rises. The developing device for an exposed resist, characterized in that the developing device is provided with means for suppressing the spread of temperature change of the developing solution on the resist during the development. 9. An apparatus for developing an exposed resist on a substrate, wherein the developing solution supplied onto the resist at the time of development is accumulated on the resist in such a manner that the surface tension of the solution rises. In an apparatus for developing, a means for supplying a developing solution onto the resist, a first support member for supporting the substrate with resist in contact with the substrate in a smaller area than its surface area, and the substrate. And a second supporting member whose contact is substantially point contact, and the resist-provided substrate is supported by the second support member at least when development is in progress, and the resist-provided substrate is The developing device for exposed resist, wherein the substrate is supported by the first supporting member when not supported by the second supporting member. 10. The developing device for exposed resist according to claim 9, wherein the second supporting member has a temperature adjusting means for adjusting the temperature of the second supporting member. 11. An apparatus for developing an exposed resist on a substrate, wherein the developing solution supplied from the developing solution supplying means onto the resist during development is raised by utilizing surface tension of the solution. In a device for carrying out development by accumulating on the resist with a support member for supporting and supporting the substrate with resist in a smaller area than the surface area of the substrate, the supporting member has an outlet for blowing out gas. However, the resist-coated substrate is supported separately from the supporting member by the gas blown from the gas blowing port of the supporting member at least when the development is in progress, and when the gas is not blown, the resist-containing substrate is used in the previous period. The substrate is a developing device for exposed resist, which is supported by the first supporting member. 12. The developing device for exposed resist according to claim 11, wherein the gas outlet of the support member is provided so as to blow gas obliquely to the resist-attached substrate. 13. The developing device for exposed resist according to claim 10, wherein the means for adjusting the temperature of the gas to be blown is connected to the substrate outlet. 14. A method for developing an exposed resist on a substrate, comprising: supporting the resist-provided substrate with a supporting member that comes into contact with the substrate in an area smaller than its surface area, A method in which a developing solution is supplied, and the developing solution is accumulated by utilizing the surface tension of the solution to accumulate on the resist to proceed with the development, and the temperature is relatively lower than the temperature of the supplied developing solution. A method for developing an exposed resist, which comprises: supplying the developing solution to the resist-coated substrate set in step 1 to proceed with development. 15. The method for developing an exposed resist according to claim 14, wherein the substrate with resist is cooled in advance, and a developing solution is supplied to the cooled substrate to perform development. 16. The temperature of the developing solution supplied is adjusted to be higher than the temperature of the substrate with resist supported by the supporting member, and the difference between the temperature of the substrate with resist and the temperature of the developing solution supplied is 5 to 5.
15. The method for developing an exposed resist according to claim 14, wherein the temperature is set to 10 ° C. 17. A method for developing an exposed resist on a substrate, comprising supporting the substrate with resist with a supporting member that is in contact with the substrate in an area smaller than the surface area thereof, and developing solution on the resist. In the method of accumulating the developing solution on the resist by using the surface tension of the solution and advancing the development, a step of supplying pure water onto the resist, and the supplied pure water Is stored on the resist and left to stand, and the temperature of the substrate with resist is lowered by evaporation of the stored pure water; and a developing solution on the resist after removing the stored pure water from the resist. And a step of developing the resist with the developer, the method for developing an exposed resist. 18. The method according to claim 17, wherein the temperature of pure water supplied to the resist-coated substrate is adjusted and set to be lower than the temperatures of the resist-coated substrate and the substrate supporting member by a temperature difference of 5 ° C. or more. A method for developing an exposed resist as described above. 19. A developing device in which, when developing an exposed resist on a substrate, the substrate with resist is in contact with the substrate in a smaller area than its surface area and supported by a supporting member, At this time, the developing solution supplied from the developing solution supply means onto the resist is swelled by utilizing the surface tension of the solution, and in the apparatus for performing development by accumulating on the resist, pure water is deposited on the resist. And a means for supplying a developing solution onto the resist. Prior to the supply of the developing solution for developing, pure water is supplied onto the resist from the pure water supplying means, and pure water is supplied. The exposure is performed in such a manner that the surface of the resist-coated substrate is lowered by accumulating on the resist in a structure that swells by utilizing the surface tension of the resist, and then a developing solution is supplied onto the resist from the developing solution supply means to perform development. Done Gist of the developing device. 20. The exposed resist according to claim 19, further comprising a device for adjusting a temperature of pure water to be supplied, the pure water temperature adjusting device being connected to the means for supplying pure water. Development device. 21. A method for developing an exposed resist on a substrate, comprising: supporting the resist-provided substrate with a supporting member that is in contact with the substrate in a smaller area than its surface area, and developing the resist solution on the resist. And a method of advancing the development by accumulating the developing solution on the resist in such a manner that the developing solution is raised by utilizing surface tension of the solution, and a step of supplying the developing solution onto the resist, 15. The exposed resist according to claim 14, further comprising a step of bringing a cover member for preventing evaporation of the developing solution into close proximity so as to cover the accumulated developing solution, or bringing it into contact with a developing solution after being accumulated on the resist. Development method. 22. A cover member for preventing evaporation of the developer,
A constant temperature plate, which maintains a constant temperature,
21. The method for developing an exposed resist according to 21. 23. A developing device in which, when developing an exposed resist on a substrate, the substrate with resist is in contact with the substrate in a smaller area than its surface area and supported by a supporting member, At this time, in a device that develops by developing the developer supplied onto the resist from the developer supplying means on the resist so as to rise by utilizing the surface tension of the solution, the developer accumulated on the resist A cover member for preventing evaporation of the liquid, and a means for supplying a developing solution onto the resist, and supplying the developing solution onto the resist from the developing solution supplying means,
An exposed resist for advancing development by bringing a cover member for preventing evaporation of the developing solution when the developing solution is accumulated on the resist close to or in contact with the developing solution so as to advance the development. Development device. 24. The exposed resist developing apparatus according to claim 23, wherein the cover member for preventing the evaporation of the developing solution is a constant temperature plate which is kept at a constant temperature.