JPH0462831A - Application of photoresist - Google Patents
Application of photoresistInfo
- Publication number
- JPH0462831A JPH0462831A JP16642190A JP16642190A JPH0462831A JP H0462831 A JPH0462831 A JP H0462831A JP 16642190 A JP16642190 A JP 16642190A JP 16642190 A JP16642190 A JP 16642190A JP H0462831 A JPH0462831 A JP H0462831A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- photoresist
- temperature
- washing liquid
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 67
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 238000004140 cleaning Methods 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005406 washing Methods 0.000 abstract 8
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 72
- 239000010408 film Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000005507 spraying Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、ＬＳＩなどの半導体装置の製造方法のうち、
ホトリソグラフィ工程におけるホトレジスト塗布方法に
関するもので、特にスピンコード法により、ウェーハ表
面に均一なホトレジスト膜を形成する方法に使用される
ものである。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a method for manufacturing a semiconductor device such as an LSI.
The present invention relates to a photoresist coating method in a photolithography process, and is particularly used for forming a uniform photoresist film on a wafer surface by a spin code method.
（従来の技術）
ウェーハ上に薄いホトレジスト膜を形成する方法として
、レジストをウェーハ中央部に滴下した後、ウェーハを
所定の回転数で回転させるスピンコード法と呼ばれる方
法か一般的に知られている。(Prior art) A commonly known method for forming a thin photoresist film on a wafer is the spin code method, in which resist is dropped onto the center of the wafer and then the wafer is rotated at a predetermined number of revolutions. .
この方法は、ウェーハ回転時に生ずる遠心力を利用して
ホトレジスト薄膜を形成するが、この方法のメカニズム
は、主として（イ）ホトレジストの流動性、（ロ）ホト
レジスト中の樹脂成分の分子間結合力、（ハ）スピンに
よる遠心力、（ニ）ホトレジスト溶媒の揮発性等、上記
各要因か互いに打ち消しあい、又は助長しあって微妙な
バランスによってウェーハ表面に均一なホトレジストの
塗布が行なわれている。This method forms a photoresist thin film using the centrifugal force generated when the wafer is rotated, but the mechanism of this method is mainly (a) fluidity of the photoresist, (b) intermolecular bonding force of the resin components in the photoresist, The above factors, such as (c) centrifugal force due to spin and (d) volatility of the photoresist solvent, cancel each other out or promote each other, and a delicate balance is used to achieve uniform coating of photoresist on the wafer surface.
また塗布中にホトレジストかウェーハ裏面に回りこむの
で、このレジストを除去するため、ホトレジストを塗布
しなから、ウェーハ裏面に洗浄液を吹きつけている。Also, during coating, some of the photoresist gets onto the backside of the wafer, so in order to remove this resist, a cleaning solution is sprayed onto the backside of the wafer before applying the photoresist.
従来のホトレジスト塗布方法では、ウェーハの口径が大
きくなれはなるほど、前記各要素のバラシスかくずれて
きてしまう。 特にスピンでの周速度が、大口径ウェー
ハになると、ウェーハ周辺部か中心部に比べ大きくなる
。 そのためウェーハ表面のホトレジストの膜厚は、周
辺部で厚く、中心部で薄くなる傾向があり、従来の塗布
方法では、ウェーハ全面に均一なホトレジストを塗布す
ることは不可能である。 なお大口径ウェーハになって
も、塗布中にホトレジストがウェーハ裏面に回りこむ現
象はおこる。In the conventional photoresist coating method, as the diameter of the wafer becomes larger, the consistency of each of the above-mentioned elements deteriorates. In particular, for large-diameter wafers, the circumferential speed during spin is higher at the periphery of the wafer than at the center. Therefore, the thickness of the photoresist on the wafer surface tends to be thicker at the periphery and thinner at the center, making it impossible to uniformly coat the entire surface of the wafer with conventional coating methods. Even with large-diameter wafers, the phenomenon that photoresist wraps around to the backside of the wafer during coating still occurs.
（発明が解決しようとする課題）
上記のように、従来のスピンコード法によるホトレジス
ト塗布方法では、その膜厚か、ウェーハの中心部では薄
く、周辺部では厚く、ウェーハ全面に均一な８３のホト
レジスト膜を塗布することは難しく、この傾向は、ウェ
ーハの大口径化に伴い、著しくなってくる。(Problems to be Solved by the Invention) As described above, in the conventional photoresist coating method using the spin code method, the film thickness is thin at the center of the wafer, thick at the periphery, and the photoresist is uniform over the entire surface of the wafer. It is difficult to apply the film, and this tendency becomes more pronounced as the diameter of the wafer becomes larger.
このような、ホトレジスト膜の膜厚の不均一性は、露光
に際して、レジストの解像度を劣化させ、レジストパタ
ーンの寸法精度の低下をもならす。Such non-uniformity in the thickness of the photoresist film deteriorates the resolution of the resist during exposure and also causes a decrease in the dimensional accuracy of the resist pattern.
他方、半導体デバイスの微細化、高集積化に伴い、レジ
スト解像度の向上が望まれ、ホトレジス）・膜厚の均一
度に対する要求は、より厳しくなっている。On the other hand, as semiconductor devices become smaller and more highly integrated, improvements in resist resolution are desired, and requirements for photoresist film thickness uniformity are becoming more stringent.
ウェーハの大口径化や、半導体デバイスの高集積化に伴
い、多様化するホトレジストにも対応できるように、ホ
トレジスト膜の膜厚の均一性を向上することは、重要な
課題である。As wafers become larger in diameter and semiconductor devices become more highly integrated, it is an important issue to improve the uniformity of the photoresist film thickness so that it can be used in increasingly diverse photoresists.
本発明の目的は、上記の課題を解決するためになされた
もので、スピンコード法によりウェーハ表面にホトレジ
スト膜を塗布するに際し、ウェーハ表面に均一な膜厚の
ホトレジスト膜を形成するとともに、ウェーハ裏面に回
りこむホトレジストを除去できるポ１ヘレジスＩ・塗布
方法を提供するものである。An object of the present invention has been made to solve the above-mentioned problems, and when applying a photoresist film to the wafer surface by a spin code method, it is possible to form a photoresist film with a uniform thickness on the wafer surface, and also to form a photoresist film with a uniform thickness on the wafer back surface. This invention provides a point-to-point resist I coating method that can remove photoresist that wraps around.
［発明の構成］
（課題を解決するための手段）
本発明は、半導体ウェーハを回転させ、該つ工−ハ表面
にホトレジストを滴下し、遠心力によって該ウェーハ表
面にホトレジストを塗布するとともに、該ウェーハ裏面
に洗浄液を吹きつけるホトレジスト塗布方法において、
前記洗浄液の温度を制御し、かつ洗浄液を吹きっけるウ
ェーハ裏面上の位置を所望の位置に指定することを特徴
とするホトレジスト塗布方法である。[Structure of the Invention] (Means for Solving the Problem) The present invention rotates a semiconductor wafer, drops photoresist onto the surface of the wafer, coats the wafer surface with centrifugal force, and applies the photoresist onto the wafer surface. In the photoresist coating method, which sprays a cleaning solution onto the backside of the wafer,
This photoresist coating method is characterized in that the temperature of the cleaning liquid is controlled and the position on the back surface of the wafer where the cleaning liquid is sprayed is designated as a desired position.
（作用）
本発明は、ウェーハ裏面に洗浄液を吹きつけることによ
り、ウェーハの温度を局所的に制御できることを知り、
これに基づき行われたものである。(Function) The present invention has discovered that the temperature of the wafer can be locally controlled by spraying a cleaning liquid onto the back surface of the wafer.
This was done based on this.
すなわち吹きつけられる洗浄液は、ウェーハ裏面に回り
こむレジス１へを除去する作用と、塗布中のウェーハ温
度を局所的に制御する作用とを持つ。That is, the sprayed cleaning liquid has the function of removing the resist 1 that wraps around the back surface of the wafer, and the function of locally controlling the wafer temperature during coating.
洗浄液の温度を制御し、ウェーハ裏面に吹きっけると、
吹きつけられたウェーハ部分は、洗浄液により、冷却ま
たは加熱され、ウェーハ温度は局所的に低く、または高
くなる。By controlling the temperature of the cleaning solution and spraying it onto the backside of the wafer,
The sprayed wafer area is cooled or heated by the cleaning liquid, and the wafer temperature becomes locally low or high.
一般につ、ｙ＝−ハ温度の高い部分のポ１へレジストは
、溶媒の乾燥速度が速くなり、形成されるレジストの膜
厚は厚くなる。 またウェーハ温度の低い部分のホトレ
ジストは、溶媒の乾燥速度が遅くなり、形成されるホト
レジストの膜厚は薄くなる。In general, the drying rate of the solvent in the resist at the high temperature portion becomes faster and the thickness of the formed resist becomes thicker. In addition, in the photoresist in the portion where the wafer temperature is low, the drying rate of the solvent is slow, and the thickness of the photoresist formed is thin.
例えば、ウェーハ周辺部のホトレジスト膜厚が中心部に
比し厚くなる場合には、ウェーハ周辺部の温度を中心部
に比べ低くすれは、周辺部の膜厚は減少し、中心部と周
辺部との膜厚の均等化が得られる。 すなわち洗浄液の
温度を制御し、吹きつける位置を指定することにより、
ホトレジスト塗布膜の膜厚を局所的に制御できる。For example, if the photoresist film thickness at the periphery of the wafer is thicker than at the center, if the temperature at the wafer periphery is lowered compared to the center, the film thickness at the periphery will decrease and the difference between the center and periphery will decrease. It is possible to obtain uniform film thickness. In other words, by controlling the temperature of the cleaning liquid and specifying the spraying position,
The thickness of the photoresist coating film can be locally controlled.
〈実施例）
以下、本発明の一実施例について、第１図を参照して説
明する。 同図は、本発明のホトレジスト塗布方法に使
用する塗布装置の構成の一例を模式的に示すものである
。 同図中の符号１はバキュームチャックでウェーハ２
を真空で吸着保持しながら回転する。 ３はウェーハ２
を囲むように設けたカップで、底部に排液口４が設けら
れている。 ５は洗浄液吐出ノズルで、ウェーハ２の裏
面下方の位置に設置されている。 ６はノズル可動機構
で、洗浄液がウェーハ裏面の所望位置に吹きつけられる
ようにするため、洗浄液吐出ノズル５を移動する機構で
ある。 本実施例では、可動機′！Ｉ４６は、洗浄液吐
出ノズルの角度を変化させて、ウェーハ裏面の所望位置
に洗浄液を吹きつける構造となっている。 これは吐出
ノズルをウェーハの直径方向に移動できる構造としても
差し支えない。 洗浄液吐出ノズル５はパイプ７に接続
されている。 このパイプ７は、カップ３の底部を貫通
して、サーモコントローラ（温度調節器）８で温度制御
された水槽９の中を通っている６ これにより、パイプ
中を流れる洗浄液（有機溶剤）の温度は、水槽９の水温
を調整することにより、所望の温度に制御できる。<Example> An example of the present invention will be described below with reference to FIG. This figure schematically shows an example of the configuration of a coating device used in the photoresist coating method of the present invention. The code 1 in the figure is a vacuum chuck and the wafer 2 is
Rotate while holding it under vacuum. 3 is wafer 2
It is a cup provided so as to surround the cup, and a drain port 4 is provided at the bottom. Reference numeral 5 denotes a cleaning liquid discharge nozzle, which is installed at a position below the back surface of the wafer 2. A nozzle moving mechanism 6 is a mechanism for moving the cleaning liquid discharge nozzle 5 so that the cleaning liquid is sprayed onto a desired position on the back surface of the wafer. In this embodiment, the movable machine'! I46 has a structure in which the cleaning liquid is sprayed onto a desired position on the back surface of the wafer by changing the angle of the cleaning liquid discharge nozzle. This may also be a structure in which the discharge nozzle can be moved in the diametrical direction of the wafer. The cleaning liquid discharge nozzle 5 is connected to a pipe 7. This pipe 7 passes through the bottom of the cup 3 and passes through a water tank 9 whose temperature is controlled by a thermocontroller (temperature regulator) 8.6 This allows the temperature of the cleaning liquid (organic solvent) flowing through the pipe to be can be controlled to a desired temperature by adjusting the water temperature in the water tank 9.
次に上記構成のホトレジスト塗布装置を使用し、８イン
チウェーハ（口径的２００１′ｌ１ｌ）上に、普通のレ
ジスト材で、膜厚約１３０００スのホトレジスト膜を塗
布する方法について説明する。Next, a method of coating a photoresist film with a thickness of about 13,000 mm using a normal resist material on an 8-inch wafer (diameter: 2001'l1l) using the photoresist coating apparatus having the above configuration will be described.
従来技術では、洗浄液の吹きつけは、塗布中、ウェーハ
裏面に回りこむホトレジストを除去することを目的とす
るので、洗浄液の温度は室温（約２４°Ｃ前後）程度と
し、特に温度制御はされない。In the conventional technology, the purpose of spraying the cleaning liquid is to remove the photoresist that wraps around the back surface of the wafer during coating, so the temperature of the cleaning liquid is around room temperature (about 24°C), and there is no particular temperature control.
また洗浄液の吹きつけ位置は、ウェーハ裏面中心部に近
い内方とされ、その位置精度はあまり要求されない。
このため、前述のように、ウェーハ周辺部のホトレジス
トの膜厚は、中心部の膜厚に比し厚くなり、例えは第２
図に示すように、ウェーハの周縁から約２０Ｉｌ１ｍの
範囲では膜厚のバラツキが±１０００ス以上となってい
る。Further, the spraying position of the cleaning liquid is inward near the center of the back surface of the wafer, and high positional accuracy is not required.
Therefore, as mentioned above, the photoresist film thickness at the periphery of the wafer is thicker than that at the center.
As shown in the figure, within a range of approximately 20Il1m from the periphery of the wafer, the variation in film thickness is ±1000s or more.
本実施例においては、上記従来例のデータ及び洗浄液の
温度とウェーハ上の吹きつけ位置とを変数とした試行デ
ータに基づき、洗浄液を１８°Ｃに温度制御し、洗浄液
を吹きつける位置を、ウェーハ周縁から内方、約２０ｍ
１１１に指定した。 あらかじめ上記準備をした後、公
知の方法に準じ、ホトレジスト（温度はほぼ室温に等し
い）をウェーハ表面中央部に滴下し、ウェーハを高速回
転するとともに洗浄液をウェーハ裏面に吹きつけ、ホト
レジスト膜を塗布する。In this example, the temperature of the cleaning liquid was controlled to 18°C, and the position at which the cleaning liquid was sprayed was adjusted to Approximately 20m inward from the rim
I specified it as 111. After making the above preparations in advance, according to a known method, photoresist (temperature approximately equal to room temperature) is dropped onto the center of the wafer surface, the wafer is rotated at high speed, and a cleaning solution is sprayed onto the backside of the wafer to coat the photoresist film. .
このようなホトレジスト塗布方法により形成したホトレ
ジスト膜のウェーハ面内の膜厚の分布を第２図＜ａ ＞
に、また膜厚測定点を同図（ｂ ）に示す。 測定点は
、ウェーハの中心Ｃを通る直径ＡＣＢにそって、一定間
隔で選定された。 同図（ａ ）の横軸は、測定点の位
置を示し、ウェーハの中心Ｃからの距離（＋＋＋）で表
わす。 縦軸は、ホトレジスト膜厚（久）で、図中の○
印点は前記実施例の、また×印点は従来例の、それぞれ
のホトレジスト塗布方法により形成されたホトレジスト
膜の各測定点における膜厚を示す。 同図（ａ）から明
らかなように、本発明の塗布方法によると、ウェーハ周
辺部のＭ厚のバラツキは約５０ス以内となり、従来の塗
布方法に比し、膜厚の均一度が著しく改善されたことが
わかる。The distribution of the film thickness within the wafer surface of the photoresist film formed by such a photoresist coating method is shown in Fig. 2<a>.
In addition, the film thickness measurement points are shown in the same figure (b). Measurement points were selected at regular intervals along the diameter ACB passing through the center C of the wafer. The horizontal axis in FIG. 3A indicates the position of the measurement point, expressed as a distance (+++) from the center C of the wafer. The vertical axis is the photoresist film thickness (duration), marked with ○ in the figure.
The dots indicate the film thickness at each measurement point of the photoresist film formed by the photoresist coating method of the above embodiment and the dots of the conventional example. As is clear from Figure (a), according to the coating method of the present invention, the variation in the M thickness at the periphery of the wafer is within about 50 mm, and the uniformity of the film thickness is significantly improved compared to the conventional coating method. I know what happened.
前記本実施例の塗布方法においては、ホトレジスト及び
ウェーハの温度は、約２４℃（室温）であり、洗浄液の
温度は１８℃に制御されている。 洗浄液はウェーハ周
縁より２０ｍｎ＋内方の部分に吹きつけられ、ウェーハ
の外周縁に向かって流れ、ウェーハ裏面に回りこむホト
レジストを除去するとともに周辺部分を冷却する。 こ
れにより周辺部表面のレジストの温度は、中心部近傍に
比し低下し、レジスト中の溶媒の乾燥速度か遅くなり、
レジストの流動性は、その分たけ長く保持され、該部分
のレジスト膜厚は薄くなる。 このようなメカニズムに
より、ウェーハ周辺部のホトレジスト膜厚と中心部のＭ
厚とは、均一になるものと考えられる。In the coating method of this embodiment, the temperature of the photoresist and wafer is approximately 24°C (room temperature), and the temperature of the cleaning liquid is controlled at 18°C. The cleaning liquid is sprayed 20 mm+ inward from the wafer periphery, flows toward the outer periphery of the wafer, removes the photoresist that wraps around the back surface of the wafer, and cools the periphery. As a result, the temperature of the resist on the peripheral surface is lower than that near the center, and the drying rate of the solvent in the resist is slowed down.
The fluidity of the resist is maintained for a correspondingly longer period of time, and the resist film thickness in this area becomes thinner. Due to this mechanism, the photoresist film thickness at the periphery of the wafer and the M at the center are
Thickness is considered to be uniform.
本発明のホトレジスト塗布方法における洗浄液の制御温
度及び吹きつける位置は、前記実施例に限定されない。The control temperature and spraying position of the cleaning liquid in the photoresist coating method of the present invention are not limited to the above embodiments.
例えば洗浄液の温度をウェーハ温度より高くして、部
分的にウェーハを加熱し、ホトレジスト膜厚の局所的制
御を計ってもよいし、また洗浄液吐出ノズルの方向を固
定しないで、所定範囲にわたり、振らせて、ホトレジス
ト膜厚の均一化を計っても差し支えない、 また洗浄液
の吐出量を調整して、ウェーハ温度を制御することも考
えられる。For example, the temperature of the cleaning solution may be raised higher than the wafer temperature to partially heat the wafer to locally control the photoresist film thickness, or the direction of the cleaning solution discharge nozzle may not be fixed and the wafer may be shaken over a predetermined range. In addition, it is possible to make the photoresist film thickness uniform, and it is also possible to control the wafer temperature by adjusting the amount of cleaning liquid discharged.
［発明の効果］
これまで述べたように、本発明のホトレジスト塗布方法
では、ホトレジスト塗布中のウェーハ裏面に、温度制御
された洗浄液を、所望の位置に吹きつけることにより、
ウェーハ裏面の周辺部に回りこむホトレジストを除去す
るとともに、ウェーハ面内におけるホトレジスト膜厚を
局所的に制御することが可能となった。 本発明により
、ウェーハの大口径化や半導体デバイスの高集積化に対
応できる均一な膜厚のホ）〜レジスト膜を形成すること
ができ、かつ、ウェーハ裏面に回りこむホトレジストを
除去できるホトレジスト塗布方法を提供することができ
た。[Effects of the Invention] As described above, in the photoresist coating method of the present invention, by spraying a temperature-controlled cleaning liquid at a desired position on the back surface of the wafer during which photoresist is being coated,
It has become possible to remove the photoresist that wraps around the periphery of the back surface of the wafer and to locally control the photoresist film thickness within the wafer surface. According to the present invention, a photoresist coating method can form a resist film with a uniform thickness that is compatible with larger diameter wafers and higher integration of semiconductor devices, and can also remove photoresist that wraps around the back surface of the wafer. were able to provide.
第１図は本発明のホトレジスト塗布方法に使用されるホ
トレジス）〜塗布装置の構成を示す図、第２図は本発明
例及び従来例それぞれのホトレジスト塗布方法により形
成されたホトレジスト膜のウェーハ面内の膜厚を示ず図
である。
１・・・バキュームチャック、 ２・・・ウェーハ５・
・・洗浄液吐出ノズル、 ６・・・ノズル可動機構、８
・・・サーモコン１〜ローラ、 ９・・・水槽。
特許出願人 株式会社東芝（ほか１名）（ｂ）
の距離（ＩＩｌｌ）Fig. 1 is a diagram showing the configuration of the photoresist coating device used in the photoresist coating method of the present invention, and Fig. 2 is a diagram showing the inside of the wafer surface of the photoresist film formed by the photoresist coating method of the present invention and the conventional example. It is a figure which does not show the film thickness. 1...Vacuum chuck, 2...Wafer 5.
...Cleaning liquid discharge nozzle, 6...Nozzle movable mechanism, 8
...Thermo-con 1 to roller, 9...Aquarium. Patent applicant Toshiba Corporation (and 1 other person) (b) Distance (IIll)
Claims (1)
レジストを滴下し、遠心力によって該ウェーハ表面にホ
トレジストを塗布するとともに、該ウェーハ裏面に洗浄
液を吹きつけるホトレジスト塗布方法において、 前記洗浄液の温度を制御し、かつ洗浄液を吹きつけるウ
ェーハ裏面上の位置を所望の位置に指定することを特徴
とするホトレジスト塗布方法。[Scope of Claims] 1. A photoresist coating method in which a semiconductor wafer is rotated, photoresist is dropped onto the wafer surface, the photoresist is applied to the wafer surface by centrifugal force, and a cleaning solution is sprayed onto the wafer back surface, comprising: A photoresist coating method characterized by controlling the temperature of the wafer and specifying a desired position on the backside of the wafer at which a cleaning liquid is to be sprayed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16642190A JPH0462831A (en) | 1990-06-25 | 1990-06-25 | Application of photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16642190A JPH0462831A (en) | 1990-06-25 | 1990-06-25 | Application of photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0462831A true JPH0462831A (en) | 1992-02-27 |
Family
ID=15831114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16642190A Pending JPH0462831A (en) | 1990-06-25 | 1990-06-25 | Application of photoresist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0462831A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114152A (en) * | 1998-10-08 | 2000-04-21 | Tokyo Electron Ltd | Substrate processing apparatus |
| JP2003117470A (en) * | 2001-10-16 | 2003-04-22 | Semiconductor Leading Edge Technologies Inc | Rotary thin film forming apparatus and thin film forming method |
| US7415985B2 (en) * | 2003-09-24 | 2008-08-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning and drying apparatus |
| KR20120001681A (en) * | 2010-06-29 | 2012-01-04 | 도쿄엘렉트론가부시키가이샤 | Coating method and coating apparatus |
| WO2014123085A1 (en) * | 2013-02-06 | 2014-08-14 | 東京エレクトロン株式会社 | Coat film formation method, coat film formation device, and memory medium |
| JP2014183121A (en) * | 2013-03-18 | 2014-09-29 | Tokyo Electron Ltd | Liquid processing apparatus |
-
1990
- 1990-06-25 JP JP16642190A patent/JPH0462831A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114152A (en) * | 1998-10-08 | 2000-04-21 | Tokyo Electron Ltd | Substrate processing apparatus |
| JP2003117470A (en) * | 2001-10-16 | 2003-04-22 | Semiconductor Leading Edge Technologies Inc | Rotary thin film forming apparatus and thin film forming method |
| US7415985B2 (en) * | 2003-09-24 | 2008-08-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning and drying apparatus |
| KR20120001681A (en) * | 2010-06-29 | 2012-01-04 | 도쿄엘렉트론가부시키가이샤 | Coating method and coating apparatus |
| JP2012011279A (en) * | 2010-06-29 | 2012-01-19 | Tokyo Electron Ltd | Application method and application device |
| WO2014123085A1 (en) * | 2013-02-06 | 2014-08-14 | 東京エレクトロン株式会社 | Coat film formation method, coat film formation device, and memory medium |
| JP2014151249A (en) * | 2013-02-06 | 2014-08-25 | Tokyo Electron Ltd | Coating film forming method, coating film forming device, and storage medium |
| JP2014183121A (en) * | 2013-03-18 | 2014-09-29 | Tokyo Electron Ltd | Liquid processing apparatus |
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