JPS581144A - Method for coating photoresist - Google Patents
Method for coating photoresistInfo
- Publication number
- JPS581144A JPS581144A JP9910681A JP9910681A JPS581144A JP S581144 A JPS581144 A JP S581144A JP 9910681 A JP9910681 A JP 9910681A JP 9910681 A JP9910681 A JP 9910681A JP S581144 A JPS581144 A JP S581144A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- photoresist
- dropping
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、各種基板上にフォトレジストを塗布する方法
の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in methods for applying photoresists onto various substrates.
半導体装置の製造あるいは半導体装置の製造に用いられ
るフォトマスクの製造等には均一なフォトレジスト膜が
必要とされ、かかるフォトレジスト膜を得る方法として
は、従来より浸漬法、スプレー法、及びスピンナー法等
がち抄、中でもスピンナー法、即ち回転式塗布方法が一
般的に広く用いられている。この回転式塗布方法は、第
1図に示す如く、モータ等による回転駆動機構1に連結
したVギフト2に直結せる回転円盤8上の例えば半導体
ウェハ4の中心にフォトレジスト液6を適量滴下し、該
ウェハ4を前記回転駆動機構1により適当な回転速度で
回転し、前記ウェハ4上のフォトレジスト液6を該ウェ
ハ表面の全面にわたって広がらせ、余剰のフォトレジス
ト液6を遠心力によってとばして前記ウェハ表面上に均
一な厚さのフォトレジスト6の薄膜を形成する方法であ
る。A uniform photoresist film is required for the manufacture of semiconductor devices or the manufacture of photomasks used in the manufacture of semiconductor devices, and conventional methods for obtaining such photoresist films include dipping, spraying, and spinner methods. In general, the spinner method, ie, the rotary coating method, is widely used. As shown in FIG. 1, this rotary coating method involves dropping an appropriate amount of photoresist liquid 6 onto the center of, for example, a semiconductor wafer 4 on a rotating disk 8 that is directly connected to a V-gift 2 that is connected to a rotational drive mechanism 1 such as a motor. , the wafer 4 is rotated by the rotation drive mechanism 1 at an appropriate rotational speed, the photoresist liquid 6 on the wafer 4 is spread over the entire surface of the wafer, and the excess photoresist liquid 6 is blown off by centrifugal force. This method forms a thin film of photoresist 6 with a uniform thickness on the wafer surface.
ところで上記回転式塗布方法によってウェハ表面にフォ
トレジスト液を塗布するに際しては、上述したように、
塗布すべきウェハ4上の中心部に実質的な塗布量より4
余分目の量のフォトレジスト液6を局部的に重複して滴
下しているので、滴下されたフォトレジスト液5中に気
泡が生じ易く、かかる気泡の混じったフオ)1/シスト
液6が回転動作によってウェハ上に広がり塗布されると
、前記゛完泡に起因してフォトレジスト膜の厚さむらが
生じるといった不都合があや、均一な厚さのフオトレジ
スト膜を得ることを困難にしていた。By the way, when applying the photoresist liquid to the wafer surface by the above-mentioned rotary coating method, as mentioned above,
4 from the actual coating amount to the center of the wafer 4 to be coated.
Since an extra amount of the photoresist liquid 6 is locally and overlappingly dropped, bubbles are likely to be generated in the dropped photoresist liquid 5, and the follicle 1/cyst liquid 6 mixed with such bubbles is rotated. When the photoresist film is spread and coated on the wafer during operation, the photoresist film becomes uneven in thickness due to the above-mentioned "complete bubbles", which makes it difficult to obtain a photoresist film with a uniform thickness.
本発明の目的は、上記した従来法による不都合を除去す
るために%塗布すべき基板上にフォトレジスト液を滴下
させる際の滴下方法を改良し、均一なフォトレジスト族
を塗着し得るフォトレジストの塗布方法を提供すること
にある。即ち本発明は、基板上に7オトレレスト液を滴
下する際に、該レジスト液を基板上の回転中心部よシ屑
縁部に簿
向かつて渦巻状に滴下することを物像とするものである
。An object of the present invention is to improve the method of dropping a photoresist solution onto a substrate to be coated in order to eliminate the disadvantages of the conventional methods described above, and to provide a photoresist that can coat a uniform photoresist layer. The object of the present invention is to provide a method for applying the same. That is, the object of the present invention is to drop the resist solution from the center of rotation on the substrate to the edge of the scrap in a spiral pattern when dropping the resist solution onto the substrate. .
以下図面を用いて本発明に係る塗布方法の実施例につい
て詳細に説明する。Embodiments of the coating method according to the present invention will be described in detail below with reference to the drawings.
壜ず第8図に示すように回転駆動機構11に連続された
Vヤフト18に直結せる回転円盤18上に、フォトレジ
スト液を塗布すべき基板14を従Iを有する案内アーム
1フと、該案内アーム17「をそなえたレジスト液供給
機構16を配置する。As shown in FIG. 8, a substrate 14 to be coated with a photoresist solution is placed on a rotating disk 18 directly connected to a V shaft 18 connected to a rotational drive mechanism 11, and a guide arm 1 having a guide arm 1 and A resist liquid supply mechanism 16 equipped with a guide arm 17 is arranged.
この状態で前記基板14を適当な低回転速度で回転する
と共に置所前記基板14上の中心に配設されたしVスト
液供給管16のノズ/l/16aよりフォトレジスト液
goを適量に滴下しながら該供給管16を前記駆動部1
9によって基板14周縁部に向かって所定速度で移動さ
せる。かくするととKより、第8図の上面図及び第8図
の■−璽′切断線に沿った第4図の新面図に示されるよ
うに、前記基板14表面に渦巻状にフォトレジスト液2
0を滴下する。との時のフォトレジスF液200滴下渦
巻数は、用いられる基板14の表面積の大きさに応じて
適当に変化させればよく、かかる滴下方法により、基板
14上に滴下されたフォトレジスト液go中に気泡の混
入することがなくなる。またたとえ前記により滴下され
たフオFしVスト液80中に気泡が混入することがあっ
ても容易に脱泡される。In this state, the substrate 14 is rotated at an appropriate low rotational speed, and an appropriate amount of photoresist liquid go is applied from the nozzle/l/16a of the photoresist liquid supply pipe 16 located at the center of the substrate 14. While dropping, the supply pipe 16 is connected to the drive unit 1.
9 to move the substrate 14 toward the peripheral edge at a predetermined speed. Thus, from K, the photoresist liquid is spirally spread on the surface of the substrate 14, as shown in the top view of FIG. 8 and the new view of FIG. 2
Drop 0. The number of drops of the photoresist liquid F 200 in this case may be appropriately changed depending on the size of the surface area of the substrate 14 to be used. There will be no air bubbles mixed in. Furthermore, even if air bubbles are mixed into the spray liquid 80 dropped as described above, they can be easily defoamed.
しかる後、引続いて前記基板14を回転駆動機構11に
よって回転させれば、前記渦巻状のフォトレジスト液B
Oは、遠心力によって基板14面上に流動拡大されて前
記基板14表面上に適当4厚さに塗布される。この時、
前記フォトレジスト液80中に気泡の混入がないので、
フォトレジスト液20の塗布厚のむらがなくなり、均一
な厚さに塗布される。After that, if the substrate 14 is subsequently rotated by the rotation drive mechanism 11, the spiral photoresist liquid B
O is fluidized and expanded on the surface of the substrate 14 by centrifugal force, and is coated on the surface of the substrate 14 to an appropriate thickness. At this time,
Since there are no air bubbles mixed into the photoresist liquid 80,
There is no unevenness in the coating thickness of the photoresist liquid 20, and the photoresist liquid 20 is coated to a uniform thickness.
以上の説明から明らかなように本発明によるフォトレジ
ストの塗布方法によれば、半導体基板あるいはフオFマ
スク用基板等1tJ−にフォトレVスを膜を塗着するこ
とができる利点を有し、塗布工程の歩留り、信頼性が向
上する。を九本実施例で説明したレジスト液の滴下方法
によれば従来のように金分目に滴下する必要がなく、レ
ジストの消費量を大幅に低減することができる等、実用
上すぐれた効果を有するものであシ、半導体基板上に例
えば拡散コーディング剤あるいは耐熱ポリマ等を塗布す
る場金等に適用して極めて有利である。As is clear from the above description, the photoresist coating method according to the present invention has the advantage that a photoresist film can be coated on a semiconductor substrate or a photo-F mask substrate, etc. Process yield and reliability improve. According to the method of dropping the resist solution explained in this embodiment, there is no need to drop the resist solution every minute as in the conventional method, and the amount of resist consumed can be significantly reduced, which has excellent practical effects. It is extremely advantageous to apply this method to, for example, coating a diffusion coating agent or a heat-resistant polymer on a semiconductor substrate.
第1図は従来の回転塗布方法を説明する図、第□8図は
本発明に係るフォトレジストの塗布方法の一実施例に用
いる装置の要部断面図、第8図及び第4図は本発明に係
るフォトレジストの塗布方法によって基板上にフォトレ
ジスト液を渦巻状に滴下された状態を示す上面図及びそ
の新面図であ私図において、11は回転駆動機構、1g
はVヤフト、18は回転円盤、14は基板、16はレジ
スト液供給機構、16はレジスト液供給管、16aは供
給管のノズル、17は案内アーム、18は案内穴、19
は駆動部、Boは渦巻状に滴下され九フォトレジスト液
を示す。
第1図
第3図
273Fig. 1 is a diagram explaining a conventional spin coating method, Fig. □8 is a sectional view of a main part of an apparatus used in an embodiment of the photoresist coating method according to the present invention, and Figs. A top view showing a state in which a photoresist liquid is dropped in a spiral shape onto a substrate by the photoresist coating method according to the invention and a new view thereof. In the figure, 11 is a rotational drive mechanism;
18 is a rotating disk, 14 is a substrate, 16 is a resist liquid supply mechanism, 16 is a resist liquid supply pipe, 16a is a nozzle of the supply pipe, 17 is a guide arm, 18 is a guide hole, 19
is a driving part, and Bo is a photoresist solution dropped in a spiral shape. Figure 1 Figure 3 273
Claims (1)
置し、前記基板上にフォトレジスト液を滴下して回転塗
布する方法において、前記基板上にフォトレジスト液を
滴下する際に、該VジスF液を基板上の回転中心部より
周縁部に向かって渦巻状に滴下することを持重とするフ
ォトレジストの塗布方法。In a method in which a substrate to be coated with a resist is placed on a disk having a rotating shaft and a photoresist solution is dropped onto the substrate and coated by rotation, when dropping the photoresist solution onto the substrate, the V A photoresist coating method that involves dropping a diis-F solution onto a substrate in a spiral manner from the center of rotation toward the periphery.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9910681A JPS581144A (en) | 1981-06-25 | 1981-06-25 | Method for coating photoresist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9910681A JPS581144A (en) | 1981-06-25 | 1981-06-25 | Method for coating photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS581144A true JPS581144A (en) | 1983-01-06 |
Family
ID=14238575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9910681A Pending JPS581144A (en) | 1981-06-25 | 1981-06-25 | Method for coating photoresist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS581144A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59102177U (en) * | 1982-12-24 | 1984-07-10 | 株式会社東芝 | Rotary coating device |
JPS62183885A (en) * | 1986-12-19 | 1987-08-12 | Toshiba Corp | Rotary coating method |
EP0643334A1 (en) * | 1993-09-08 | 1995-03-15 | AT&T Corp. | Resist deposition |
WO2000058023A3 (en) * | 1999-03-31 | 2001-02-01 | Transitions Optical Inc | Spin and spray coating process and articles manufactured by this process |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5431280A (en) * | 1977-08-15 | 1979-03-08 | Hitachi Ltd | Photo resist coating device |
JPS5541864A (en) * | 1978-09-20 | 1980-03-24 | Fuji Photo Film Co Ltd | Spin coating method |
JPS57130570A (en) * | 1981-02-04 | 1982-08-13 | Hitachi Ltd | Spinner coating method and apparatus |
-
1981
- 1981-06-25 JP JP9910681A patent/JPS581144A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5431280A (en) * | 1977-08-15 | 1979-03-08 | Hitachi Ltd | Photo resist coating device |
JPS5541864A (en) * | 1978-09-20 | 1980-03-24 | Fuji Photo Film Co Ltd | Spin coating method |
JPS57130570A (en) * | 1981-02-04 | 1982-08-13 | Hitachi Ltd | Spinner coating method and apparatus |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59102177U (en) * | 1982-12-24 | 1984-07-10 | 株式会社東芝 | Rotary coating device |
JPS62183885A (en) * | 1986-12-19 | 1987-08-12 | Toshiba Corp | Rotary coating method |
JPH0426912B2 (en) * | 1986-12-19 | 1992-05-08 | Tokyo Shibaura Electric Co | |
EP0643334A1 (en) * | 1993-09-08 | 1995-03-15 | AT&T Corp. | Resist deposition |
WO2000058023A3 (en) * | 1999-03-31 | 2001-02-01 | Transitions Optical Inc | Spin and spray coating process and articles manufactured by this process |
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