JPS593430A - Formation of photoresist film - Google Patents

Formation of photoresist film

Info

Publication number
JPS593430A
JPS593430A JP11311682A JP11311682A JPS593430A JP S593430 A JPS593430 A JP S593430A JP 11311682 A JP11311682 A JP 11311682A JP 11311682 A JP11311682 A JP 11311682A JP S593430 A JPS593430 A JP S593430A
Authority
JP
Japan
Prior art keywords
substrates
resist
glass substrate
substrate
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11311682A
Other languages
Japanese (ja)
Inventor
Noboru Fukui
昇 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11311682A priority Critical patent/JPS593430A/en
Publication of JPS593430A publication Critical patent/JPS593430A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Abstract

PURPOSE:To form automatically and uniformly photoresist films on two mask substrates by placing the substrates opposite and close to eath other, dropping a photoresist agent, and rotating the substrates in the reverse directions. CONSTITUTION:A glass substrate 3 is put on the chuck 2 of a lower motor 1 from a cassette 4 with a chuck means. A glass substrate 3 is similarly attached to the underside of the chuck 2 of an upper motor 1 from the cassette 4. At this time, a container 7 contg. a photoresist agent is positioned above the substrate 3 on the chuck 2 of the lower motor 1, and the photoresist agent is dropped on the substrate 3 through a filter 8. The upper motor 1 is then moved to the right so as to make the substrate 3 opposite to each other. The substrates 3 are rotated in the reverse directions with the motors 1 to coat uniformly photoresist layers. All of said stages can be automated.

Description

【発明の詳細な説明】 (1,1発明の技術分野 本発明はホトレジスト膜形成方法、詳しくはマスクの形
成工程において作成されるホトレジスト膜を、従来のス
ピンコード(回転塗布)によることなく近接(プロキシ
ミティ)方法で形成する方法に関する。、 (2)技術の背景 ウェハ等の露光に用いるマスクは、マスク基板例えばガ
ラス基板上にクロム(Cr)の薄膜と低反射膜とを11
着し、これらの膜(以下クロム薄膜という)をバターニ
ングすることによって形成される。かかるバターニング
においては、クロム薄膜全面上にホトレジスト剤を塗布
してホトレジスト膜(以下レジスト膜という)を形成し
、このレジスト膜をバターニングした後にクロム薄膜を
エツチングする。
DETAILED DESCRIPTION OF THE INVENTION (1.1 Technical Field of the Invention The present invention relates to a method for forming a photoresist film, and more specifically, to a method for forming a photoresist film in a mask forming step without using a conventional spin code (rotary coating). (2) Background of the technology A mask used for exposing a wafer, etc. is a method of forming a thin film of chromium (Cr) and a low reflection film on a mask substrate, for example, a glass substrate.
These films (hereinafter referred to as chromium thin films) are deposited and patterned. In such buttering, a photoresist agent is applied over the entire surface of the chromium thin film to form a photoresist film (hereinafter referred to as a resist film), and after this resist film is buttered, the chromium thin film is etched.

前記したレジスト膜の形成には、第1図に模式的に示さ
れるスピン型レジストコーターを用い、ガラス基板1枚
ずつにレジストをコートする工程が実施される。同図に
おいて、1はモータ、2はモータlに取り付けられた真
空チャック、3はガラス基板を示し、ガラス基板3は真
空チャック2によって強固に保持される。真空チャック
2はモータ1の回転により高速回転をなし、それに伴っ
てガラス基板3も高速回転する。
To form the resist film described above, a step of coating each glass substrate with resist is carried out using a spin type resist coater schematically shown in FIG. In the figure, 1 is a motor, 2 is a vacuum chuck attached to the motor 1, and 3 is a glass substrate. The glass substrate 3 is firmly held by the vacuum chuck 2. The vacuum chuck 2 rotates at high speed due to the rotation of the motor 1, and the glass substrate 3 also rotates at high speed accordingly.

ここで液状のレジスト剤をガラス基tl!ii3の中央
部分に滴下すると、レジスト剤はガラス基板3の回転に
よって輪状に外方に拡がってガラス基板3上に平均的に
塗布される。かかるスビンコート法は簡単な装置による
レジスト剤の塗布を可能にするため現在多用される技術
である。
Here, the liquid resist agent is applied to the glass base! When dropped onto the central portion of ii3, the resist agent spreads outward in a ring shape due to the rotation of the glass substrate 3 and is evenly applied onto the glass substrate 3. Such a subin coating method is a technique that is currently widely used because it enables the application of a resist agent using a simple device.

(3)従来技術と問題点 上記従来技術においては、高速回転しているガラス基板
上に液状のレジスト剤を塗布するのであるが、レジスト
剤が最初滴下されたときその若干量は弾き飛ばされるこ
とがある。滴下されるレジスト剤の量はガラス基板の面
積とレジスト膜の膜厚とを計算して定められるのである
から、その量の若干が上記の如くに弾き飛ばされると、
形成されるレジスト膜の膜厚にバラツキを生しる結果と
なる。
(3) Prior art and problems In the prior art described above, a liquid resist agent is applied onto a glass substrate that is rotating at high speed, but when the resist agent is initially dropped, some amount of it is blown away. There is. The amount of resist agent to be dropped is determined by calculating the area of the glass substrate and the thickness of the resist film, so if some of that amount is splashed off as described above,
This results in variations in the thickness of the resist film formed.

加えて、レジスト膜の膜厚を厳密に測定したところ、ガ
ラス基板の中央部分上に比べ、その周縁部分上でレジス
ト膜の膜厚が薄いこと、すなわち、ガラス基板全面にわ
たってレジスト膜の膜厚が厳密には均一でないことが観
測された。
In addition, when the film thickness of the resist film was precisely measured, it was found that the film thickness of the resist film was thinner on the peripheral part of the glass substrate than on the central part of the glass substrate. It was observed that it was not strictly uniform.

最近の集積回路の高密化の傾向の下に、マスクのパター
ンは微細化の方向にあるが、それの形成に用いられるマ
スクの製作に不可欠なレジスト膜の膜厚が前記の如きも
のであると、マスクパターンの微細化に支障が生じる。
With the recent trend toward higher densification of integrated circuits, mask patterns are becoming smaller, but the thickness of the resist film essential for manufacturing the masks used to form them is as described above. , this poses a problem in miniaturization of the mask pattern.

(4)発明の目的 本発明は上記従来の欠点に鑑み、マスク基板上へのレジ
スト剤の塗布において、当該基板の全面にわたって均一
な膜厚のレジスト++pを形成する方法を提供するにあ
る。
(4) Object of the Invention In view of the above-mentioned conventional drawbacks, the present invention provides a method for forming a resist ++p having a uniform thickness over the entire surface of a mask substrate when applying a resist agent onto the mask substrate.

(5)発明の構成 そしてこの目的は本発明によれば、2枚のマスク基板を
レジスト膜の形成される面が互いに近接し対面した状態
に配置し、ボトレジス1−刑を一方のマスク基板の間に
滴下し、2枚のマスク基板を互いに逆方向に回転せしめ
ることを特徴とするホトレジスト膜形成方法を提供する
ことによって達成される。
(5) Structure and object of the invention According to the present invention, two mask substrates are arranged so that the surfaces on which resist films are formed are close to each other and face each other, and a bottom resist is applied to one of the mask substrates. This is achieved by providing a method for forming a photoresist film, which is characterized in that the two mask substrates are rotated in opposite directions.

(6)発明の実施例 以下本発明実施例を図面によって詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

第2図には2枚のマスク基板(ガラス基板)が近接して
配置された状態にある。なお同図以下において、第1図
に示されたものと同じ部分は同一符号を付して示す。2
枚のガラス基板3は本発明の実施例においては、レジス
ト剤が塗布される面(表面)が互いに相手方に向いた状
態で、その間に100〜500μmの間隔を置いて配置
され、レジスト剤は一方のガラス基板3の上に滴下され
る。
In FIG. 2, two mask substrates (glass substrates) are placed close to each other. Note that in the figures below, the same parts as those shown in FIG. 1 are designated by the same reference numerals. 2
In the embodiment of the present invention, the two glass substrates 3 are arranged with a distance of 100 to 500 μm between them, with the surfaces to which the resist agent is applied facing each other, and the resist agent is applied to one side. is dropped onto the glass substrate 3 of.

次いで、ガラス基板3をそれぞれ図に矢印で 示ず如く
逆方向に高速回転させる。すると、レジスト剤は、従来
のスピンコード法による場合の如く輪状に拡がるだけで
なく、この拡がりにおいて、他の部分よりも厚目のレジ
スト刑は、2枚のガラス基板3の間の間隔が前記のオー
ダーの狭いものであるので、ガラス基板の間ですり合さ
れて拡げられることになり、全体的に均一してレジスト
剤が塗布されることになる。
Next, the glass substrates 3 are each rotated at high speed in opposite directions as indicated by the arrows in the figure. Then, the resist agent not only spreads in a ring shape as in the case of the conventional spin code method, but also in this spreading, the resist agent is thicker than other parts, so that the distance between the two glass substrates 3 is as described above. Since the resist material is narrow on the order of , it is rubbed between the glass substrates and spread, and the resist agent is applied uniformly over the entire surface.

2枚のガラス基板を第2図に示す如く反対方向に回転せ
しめるには第3図に示す装置を用いる。
To rotate two glass substrates in opposite directions as shown in FIG. 2, an apparatus shown in FIG. 3 is used.

同図において、4はガラス基板3を収納するカセット、
5はカセット4と下方のモータ1が固定される台、6は
レールで、このレールに沿って上方のモータ1とレジス
ト剤容器7が図に矢印l、■で示す如くに移動可能であ
り、8はレジスト剤用のフィルタを示す。
In the figure, 4 is a cassette that stores the glass substrate 3;
5 is a stand on which the cassette 4 and the lower motor 1 are fixed; 6 is a rail, along which the upper motor 1 and the resist agent container 7 are movable as shown by arrows l and ■ in the figure; 8 indicates a filter for resist agent.

操作においては、図示しないチャック手段を用いてカセ
ット4から1枚のガラス基板3を下方に位置する(」二
向きの)チャック2上に配置する。
In operation, one glass substrate 3 is placed from the cassette 4 onto the chuck 2 located below (in two directions) using a chuck means (not shown).

次いで、上方のモータ1とレジスト剤容器7を、それら
がそれぞれカセット4と下方チャック2の上のガラス基
板3の中央上部に来る如く移動する。
Next, the upper motor 1 and resist agent container 7 are moved so that they are located above the center of the glass substrate 3 above the cassette 4 and lower chuck 2, respectively.

ここで、上方のチャック2はガラス基Mj、1を吸着保
持し、レジスト剤容器7からは所定の量のレジスト剤が
フィルタ8を経て下方のガラス基板3上に滴下される。
Here, the upper chuck 2 holds the glass substrate Mj, 1 by suction, and a predetermined amount of resist agent is dripped from the resist agent container 7 onto the lower glass substrate 3 via the filter 8.

次いで、上方のモータ1とレジスト容器7は右に図示の
位置まで移動し、上下のモータlは前記した如く反対方
向に回転し、上下のガラス基板を第2図に示す如く互い
に逆方向に高速回転し、上下のガラス基板3の相手方に
向いた面上に前記した如くレジスト剤が塗布される。第
3図から明らかな如く、装置の操作はすべて自動化する
ことが可能である。
Next, the upper motor 1 and resist container 7 move to the right to the positions shown in the figure, and the upper and lower motors l rotate in opposite directions as described above, rotating the upper and lower glass substrates at high speed in opposite directions as shown in FIG. As it rotates, the resist agent is applied onto the opposing surfaces of the upper and lower glass substrates 3 as described above. As is clear from FIG. 3, all operations of the device can be automated.

(7)発明の効果 以上、詳細に説明したように、本発明の方法によるとき
は、きわめて簡単な装置を用いマスク基板上にレジスト
膜が均一に形成され、しかもレジスト膜の塗布工程は自
動化することが可能であり、マスクパターンの微細化の
みならず、半導体装置の製造歩留りの向上に寄与する効
果大である。
(7) Effects of the Invention As explained in detail above, when using the method of the present invention, a resist film is uniformly formed on the mask substrate using an extremely simple device, and the resist film coating process is automated. This is highly effective in contributing not only to the miniaturization of mask patterns but also to improving the manufacturing yield of semiconductor devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のスピンコード法に用いる装置の模式的斜
視図、第2図は本発明の方法を実施する際における2枚
のガラス基板の配置を示す斜視図、第3図は本発明の方
法を実施するための装置の正面配置図である。 ■−モータ、2−真空チャンク、3− ガラス基板、4−カセット、5一台、 6− レール、7− レジスト剤容器、8− フィルタ 第1図 第2図
FIG. 1 is a schematic perspective view of an apparatus used in the conventional spin code method, FIG. 2 is a perspective view showing the arrangement of two glass substrates when carrying out the method of the present invention, and FIG. 1 is a front layout of the apparatus for carrying out the method; FIG. ■-Motor, 2-Vacuum chunk, 3-Glass substrate, 4-Cassette, 5 one unit, 6-Rail, 7-Resist agent container, 8-Filter Fig. 1 Fig. 2

Claims (1)

【特許請求の範囲】[Claims] 基板上にホトレジスト膜を塗布形成する方法において、
2枚の基板をレジスト膜の形成される面が互いに近接し
対面した状態に配置し、ホトレジスト剤を一方の基板の
上に滴下し、2枚の基板を互いに逆方向に回転せしめる
ことを特徴とするホトレジスト膜形成方法。
In a method of coating and forming a photoresist film on a substrate,
The method is characterized by arranging two substrates so that the surfaces on which resist films are formed are close to each other and facing each other, dropping a photoresist agent onto one of the substrates, and rotating the two substrates in opposite directions. A method for forming a photoresist film.
JP11311682A 1982-06-30 1982-06-30 Formation of photoresist film Pending JPS593430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11311682A JPS593430A (en) 1982-06-30 1982-06-30 Formation of photoresist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11311682A JPS593430A (en) 1982-06-30 1982-06-30 Formation of photoresist film

Publications (1)

Publication Number Publication Date
JPS593430A true JPS593430A (en) 1984-01-10

Family

ID=14603912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11311682A Pending JPS593430A (en) 1982-06-30 1982-06-30 Formation of photoresist film

Country Status (1)

Country Link
JP (1) JPS593430A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184753A (en) * 1983-04-06 1984-10-20 株式会社竹中工務店 Dry shrinkage reducing agent for cement
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
JPH02124750A (en) * 1988-07-15 1990-05-14 Takenaka Komuten Co Ltd Improver for durability of set body of hydraulic cement, improvement of durability and set body of hydraulic cement having improved durability
US8013249B2 (en) 2006-11-24 2011-09-06 Autonetworks Technologies, Ltd. Shield conductor and shield conductor manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184753A (en) * 1983-04-06 1984-10-20 株式会社竹中工務店 Dry shrinkage reducing agent for cement
JPH0428664B2 (en) * 1983-04-06 1992-05-14 Takenaka Komuten Kk
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
JPH02124750A (en) * 1988-07-15 1990-05-14 Takenaka Komuten Co Ltd Improver for durability of set body of hydraulic cement, improvement of durability and set body of hydraulic cement having improved durability
US8013249B2 (en) 2006-11-24 2011-09-06 Autonetworks Technologies, Ltd. Shield conductor and shield conductor manufacturing method

Similar Documents

Publication Publication Date Title
JPS6053675B2 (en) Spin coating method
JPS593430A (en) Formation of photoresist film
JPS5941300B2 (en) Development processing equipment
JPS5987069A (en) Resist coater
JPS62142321A (en) Wafer treatment device
JPH02219213A (en) Resist applying apparatus
JPS60217627A (en) Formation of thin film and forming device thereof
JPS6342526Y2 (en)
JPS6053307B2 (en) How to develop photosensitive resin
JPS61184824A (en) Method and device for resist coating
JPS581144A (en) Method for coating photoresist
JPS60115224A (en) Resist coating method
JPS6353925A (en) Resist mask coating
JPH0325919A (en) Developing device
JPH03262567A (en) Multilayer resist coating method
JPS60226124A (en) Resist coating apparatus
JPH08107053A (en) Formed film removing method
JPH0659453B2 (en) Method of applying resist to substrate
JPH05259062A (en) Semiconductor substrate spin coating method
JPS5978342A (en) Resist film developing method
JPH0985155A (en) Spin coating device and spin coating method
JPH02306615A (en) Resist coating method
JPH05259052A (en) Spin coating on semiconductor substrate and device
JPH031525A (en) Uniform application of resist
KR20030096487A (en) Photoresist coating apparatus and method of photolithography